TW201711161A - An electrical fuse and making method thereof - Google Patents

Abstract

The present invention provides an electrical fuse structure comprises: a substrate; a doping layer on the substrate; a isolation structure in-between the doping layer; a silicide layer on the doping layer; a pure metal layer on the isolation structure; a first metal layer on a side of the silicide layer; a second metal layer on the other side of the silicide layer; a first contact plug electrically connected to the side of the silicide layer and the first metal layer; and a second contact plug electrically connected to the other side of the silicide layer and the second metal layer. The present invention also provides a making method thereof.

Description

Electric fuse structure and manufacturing method thereof

The present invention relates to an electrical fuse structure and a method of fabricating the same, and more particularly to an electrical fuse structure having a good fuse effect and a method of fabricating the same.

In the manufacture of a semiconductor device, a process of forming a conductive film on a surface of a wafer, a process of forming a wiring layer by lithography, etching, or the like, and a process of forming an interlayer insulating film on a wiring layer are performed, and a metal is generated on the surface of the wafer through these processes. Concavities and convexities formed by electric conductors or insulators. In recent years, in order to increase the density of semiconductor integrated circuits, wiring is becoming finer or multilayer wiring is progressing. However, the technique of flattening the unevenness on the surface of wafers is becoming more and more important.

In general, as semiconductor processes become more compact and more complex, semiconductor components become more susceptible to various types of defects or impurities, so in addition to metal wiring, diodes or transistor components, Additional fusible links, ie, efuse, are formed in the integrated circuit to ensure the availability of the integrated circuit.

The application of the electric fuse can, for example, be connected to a redundancy circuit in the integrated circuit, and these connections can be used to repair or replace the defective circuit once the circuit is found to be defective. Taking the structure of the memory as an example, the conventional process will be made on the top layer of the structure. The structure of some fuses, when the memory is completed, if some of the memory cells, the word line or the function of the wires have problems, the fuses can be used to jump to other redundant ones ( Replace cells, memory cells, word lines or wires to replace them. In addition, the current fuse design can provide programming elements, so that various customers can program the circuit according to different functions. For example, in order to save R&D and manufacturing costs, the fab can use metal wires to connect to each transistor in the memory array and add a stylized connectivity component to the cable. After the semiconductor wafer is fabricated, Data input is performed externally to uniqueize each standard wafer into a variety of product wafers.

In the current application, the chip will operate in a low voltage environment, how to make the chip electric fuse use appropriate resistance value under low voltage operation, and whether it can effectively block when it is blown. Circuits have an absolute relationship with the performance and application of the product. From the current well-known process and structure, there is still room for improvement.

The present invention provides an electrical fuse structure comprising: a substrate; a doped layer on the substrate; an isolation structure between the substrate and the doped layer; a metal telluride layer on the doped layer; a layer on the isolation structure; a first metal layer on the first side of the metal telluride layer; and a second metal layer on the second side of the metal telluride layer away from the first side, wherein the first side The second test system is delimited by a pure metal layer; the first contact plug is located between the first metal layer and the metal telluride layer, electrically connecting the first side of the metal telluride layer and the first metal layer; and the second contact plug Between the first metal layer and the metal telluride layer, electrically connecting the second side of the metal telluride layer and the second metal layer.

In a preferred embodiment of the invention, the substrate comprises a component The layer and the oxide layer are located on the element layer, between the element layer and the doped layer.

In a preferred embodiment of the invention, the doped layers described above may comprise different doping types.

In a preferred embodiment of the present invention, the different doping types of the doped layers are respectively located in a portion of the doping layer of the isolation structure close to the first contact plug, and a portion between the isolation structure and the second contact plug. Doped layer.

In a preferred embodiment of the invention, the pure metal layer described above covers only the isolation structure.

In a preferred embodiment of the invention, the pure metal layer described above covers the isolation structure and a portion of the metal halide layer.

In a preferred embodiment of the invention, the metal component contained in the pure metal layer is the same as the metal component contained in the metal telluride layer.

In a preferred embodiment of the invention, the first contact plugs are singular and the second contact plugs are plural.

In a preferred embodiment of the invention, the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse covers only a portion of the doped layer.

In a preferred embodiment of the invention, the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse completely covers the doped layer.

In a preferred embodiment of the invention, the electrical fuse structure further includes an outer isolation structure on the substrate and opposite sides of the doped layer.

The invention also provides a method for manufacturing an electric fuse structure, the method comprising: providing a substrate; forming a doping layer and an isolation structure on the substrate, wherein the isolation structure is located between the doped layers; forming a pure metal layer on the isolation structure And forming a first contact plug and a second contact plug electrically connected to the first side of the metal telluride layer and the second side away from the first side, wherein The first side and the second side are separated by an isolation structure; and the first metal layer and the second metal layer are formed, wherein the first contact plug electrically connects the first side of the metal telluride layer with the first metal layer, and the second contact Plug electrical connection metal a second side of the telluride layer and a second metal layer.

In a preferred embodiment of the invention, the substrate comprises an element layer and an oxide layer formed on the element layer, between the element layer and the doped layer.

In a preferred embodiment of the present invention, the method for forming a doped layer includes the steps of: forming a polysilicon layer on a substrate; patterning the polysilicon layer to form a patterned polysilicon layer having an opening exposing the substrate; And performing an ion implantation step on the patterned polysilicon layer.

In a preferred embodiment of the present invention, the ion implantation step includes: performing a first ion implantation step to make the first portion of the doped layer a first doped type; and performing a second ion implantation In the step, the doped layer of the second portion is of a second doping type.

In a preferred embodiment of the invention, the first portion is between the first side of the doped layer and the opening, and the second portion is between the second side of the doped layer and the opening.

In a preferred embodiment of the present invention, the doped layer contains germanium, and the method of forming a pure metal layer and a metal germanide layer comprises the steps of: depositing a raw metal layer on the doped layer and the isolation structure; and performing heat treatment The step of reacting a portion of the original metal layer on the doped layer with the germanium in the doped layer to form a metal germanide layer and simultaneously forming the pure metal layer on the isolation structure.

In a preferred embodiment of the present invention, the doped layer contains germanium, and the method of forming the pure metal layer and the metal germanide layer comprises the steps of: depositing a raw metal layer on the doped layer and the isolation structure; and performing a heat treatment step And reacting a portion of the original metal layer on the doped layer with the germanium in the doped layer to form a metal germanide layer; removing an unreacted portion of the original metal layer; and forming a pure metal layer to cover the isolation structure.

In a preferred embodiment of the present invention, before the forming the first contact plug and the second contact plug, the method further comprises the steps of: forming an interposer on the isolation structure, the pure metal layer and the metal telluride layer; and etching to form a plurality Through hole And forming a first contact plug and a second contact plug in the plurality of through holes.

In a preferred embodiment of the present invention, the method for manufacturing the electrical fuse structure further includes the steps of: forming a protective layer on the first metal layer and the second metal layer, wherein the material of the protective layer is It is a low constant dielectric material or an ultra low constant dielectric material.

In a preferred embodiment of the invention, the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse covers only a portion of the doped layer.

In a preferred embodiment of the invention, the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse completely covers the doped layer.

Accordingly, the present invention can provide an electrical fuse structure and a method of fabricating the same to provide a better fuse effect. The electric fuse provided by the invention can effectively avoid metal ion residual after the low voltage operation condition, especially when the operating voltage is between 2.5 and 3 volts, so that a better melting effect can be achieved, and after the fuse is blown A resistance value of at least 10,000 ohms (Ω) provides good circuit blocking.

1‧‧‧Substrate

2‧‧‧Polysilicon layer

3, 31, 32‧‧‧ isolation structure

4, 8, 81, 82‧‧‧ metal layers

5‧‧‧Pure metal layer

6‧‧‧Intermediary

7, 71, 72‧‧‧ contact plugs

9‧‧‧Protective layer

11‧‧‧Component layer

12‧‧‧Oxide layer

21‧‧‧ patterned polycrystalline layer

22‧‧‧Doped layer

41‧‧‧metal telluride layer

H1‧‧‧ openings

The above and other objects, features, and advantages of the present invention will become more apparent and understood. FIG. 5a is a cross-sectional structural view of a process step; FIG. 5a is a schematic view of a top view of FIG. 6; FIG. 5b is a plan view of FIG. Schematic; FIG. 6 is drawn in accordance with an embodiment of the present invention, after the embodiment shown in FIG. FIG. 6a is a cross-sectional structural view of a subsequent process step of the embodiment shown in FIG. 6; FIG. 6b is drawn according to an embodiment of the present invention; FIG. 6 is a cross-sectional structural view of a subsequent process step of the embodiment shown in FIG. 6; FIG. 6c is a schematic plan view of FIG. 7 according to an embodiment of the present invention; FIG. 6d is drawn according to an embodiment of the present invention, FIG. Figure 6e is a schematic view of a top view of the embodiment of the present invention; Figure 7-10 is a schematic view of the structure of Figure 7b; Figure 7-10 is drawn according to an embodiment of the present invention, and the subsequent process steps of the embodiment shown in Figure 7 FIG. 10a is a schematic cross-sectional view of an electrical fuse structure according to an embodiment of the present invention; and FIG. 10b is a schematic cross-sectional view of an electrical fuse structure according to an embodiment of the present invention.

SUMMARY OF THE INVENTION The present invention is directed to an electrical fuse structure and method of making the same to provide a better blown effect. The electric fuse provided by the invention can effectively avoid metal ion residual after the low voltage operation condition, especially when the operating voltage is between 2.5 and 3 volts, so that a better melting effect can be achieved, and after the fuse is blown A resistance value of at least 10,000 ohms (Ω) provides good circuit blocking. The above and other objects, features, and advantages of the present invention will become more apparent and understood.

1-10 illustrate different systems in accordance with an embodiment of the present invention. Cross-sectional structural views of the steps; and Figures 5a-5b, 6a-6e, and 10a-10b are schematic cross-sectional and/or top-rise structural views of different embodiments provided in accordance with the same process steps.

First, as shown in FIG. 1, a substrate 1 is provided, and a polycrystalline germanium layer 2 is formed on the substrate 1. The substrate 1 may comprise an element layer 11 and an oxide layer 12 on the element layer, and the element layer 11 may comprise a plurality of transistors, F-RAM or other semiconductor elements. Although this embodiment has both the element layer 11 and the oxide layer 12, in other embodiments the substrate 1 may also include only the element layer 11. Thereafter, as shown in FIG. 2, the polysilicon layer 2 is patterned to form a patterned polysilicon layer 21 having an opening H1 exposing the substrate 1 to divide the patterned polysilicon layer 21 into different portions (this embodiment is shown in FIG. Shown, the patterned polycrystalline germanium layer 21 on the left and the patterned polycrystalline germanium layer 21 on the right. Moreover, the horizontal position of the opening H1 in the polysilicon layer 21 can be adjusted according to different embodiments, and can be closer to the left side or the right side. This embodiment is located approximately in the middle. As shown in FIG. 3, an isolation structure 3 is formed in the opening H1, and the patterned polysilicon layer 21 is ion implanted to form a doped layer 22. The ion implantation process may be performed before or after the isolation structure 3 is formed, and different portions of the patterned polysilicon layer 21 may have different doping types or the same doping type (one or more times depending on the situation) Ion implantation). The same P doping type is used in this embodiment. Next, as shown in FIG. 4, a raw metal layer 4 is formed on the surface of the doped layer 22 and the isolation structure 3 away from the substrate 1. The original metal layer 4 may be cobalt (Co), nickel (Ni) or other suitable metal. Then, a heat treatment process is performed to react the original metal layer 4 with the germanium in the underlying doped layer 22 to form the metal germanide layer 41 on the doped layer 22, and a portion of the original metal layer 4 above the isolation structure 3 is not. Will react to form a metal halide. In this implementation, the unreacted portion of the original metal layer 4 is removed from the remaining unreacted primary metal layer 4 after the heat treatment process to form a cross-sectional structure as shown in FIG. 5, and the metal telluride layer 41 may contain more A portion of the metal telluride layer 41. In other implementations, the unreacted portion of the original metal layer 4 can be retained for use as part of the electrical fuse structure. And for the convenience of the process, the original metal layer 4 can be comprehensive Deposited on the substrate 1 in combination with the process of removing the unreacted portion of the original metal layer 4, a portion of the original metal layer 4 other than the electric fuse structure is removed, and only the portion to be turned on is formed to form the fused layer. Silk structure.

The doped layer 22 and the metal telluride layer 41 described above are used to electrically connect different elements in the substrate 1. Therefore, the shape of both is preferably a strip shape, which may be a straight line, a broken line or a curved line. And the doping layer 22 covers only a part of the substrate 1 , and the width of the metal telluride layer 41 may be equal to or smaller than the width of the doping layer 22 (the mask may be removed by using a mask or heat treatment to adjust the metal deuteration). The width of the object layer 41). Figures 5a-5b are plan views of the structure of Figure 5, taken in accordance with various embodiments of the present invention, corresponding to a cross-sectional view of the process steps. The metal telluride layer 41 formed by this embodiment of the present invention completely covers the doped layer 22, as shown in FIG. 5a; and another embodiment of the present invention, as shown in FIG. 5b, the metal telluride layer 41 has a width smaller than that of the doping. The width of the layer 22, that is, the metal telluride layer 41 covers only a portion of the doped layer 22. In order to simplify the description, the subsequent process description and the drawing of the drawings will be made in the above embodiment of FIG. 5a.

Next, as shown in FIG. 6, a pure metal layer 5 is formed on the isolation structure 3. The material of the pure metal layer 5 may be cobalt (Co), nickel (Ni) or other suitable metal. In the above embodiment of the invention, the material of the pure metal layer 5 is the same as the metal composition of the metal telluride layer 41. In another embodiment of the invention, the material of the pure metal layer 5 is selected from any suitable metal. In addition, the coverage of the pure metal layer 5 can be adjusted according to requirements, as long as different portions of the metal telluride layer 41 can be connected, so that different portions of the metal telluride layer 41 can be electrically connected by the pure metal layer 5. As a result, the relative width and length of the pure metal layer 5 and the metal telluride layer 41 can be adjusted. In this embodiment, the pure metal layer 5 is formed only on the isolation structure 3 as shown in FIG. 6, and is in contact with the metal telluride layer 41. However, in accordance with various embodiments of the present invention, the length of the pure metal layer 5 in the same direction of extension as the metal telluride 41 can be adjusted. In an embodiment of the invention as shown in FIG. 6a, in order to ensure the contact of the pure metal layer 5 with the metal telluride layer 41, the pure metal layer 5 is formed and covers the isolation structure 3 and a portion of the metal adjacent to the isolation structure 3 On the object layer 41, and the pure metal layer 5 may not be covered by the surface Flattening, causing the upper surface of the pure metal layer 5 to be slightly recessed corresponding to the portion of the isolation structure 3; yet another embodiment, as shown in FIG. 6b, the pure metal layer 5 is formed and completely covered on the isolation structure 3 and the metal telluride layer 41. And the pure metal layer 5 may be uneven due to the surface of the cover, resulting in a slight depression of the upper surface of the pure metal layer 5 corresponding to the portion of the isolation structure 3. In addition, after forming the pure metal layer 5, a planarization process may be selectively performed to make the pure metal layer 5 in FIG. 6 coplanar with the upper surface of the metal telluride layer 41, or the implementation shown in FIGS. 6a and 6b. In the example, a planarization process is performed to planarize the upper surface of the pure metal layer 5. On the other hand, the length of the pure metal layer 5 in the direction perpendicular to the extending direction of the metal telluride 41 (i.e., the width of the pure metal layer 5) may be less than or equal to the metal telluride layer 41. In the above embodiment of the present invention, as shown in FIG. 6c, the pure metal layer 5 is only located on the isolation structure 3, and the width of the pure metal layer 5 is equal to the top view of the metal halide layer 41. In other embodiments of the present invention, The pure metal layer 5 is only located on the isolation structure 3, and as shown in the top view of FIG. 6d, the pure metal layer 5 has a smaller width than the metal telluride layer 41; and in another embodiment of the invention, as shown in FIG. 6e, the pure metal The layer 5 covers the isolation structure 3 and the metal telluride layer 41 and has a smaller width than the metal halide layer 41. Other variations can be inferred from the concepts provided by the present invention and will not be described herein.

For ease of understanding, the subsequent process step profiles are only illustrated by the embodiment shown in FIG. 6, but the drawings provided in the present invention are not intended to limit the present invention. The components and shapes described herein can be appropriately adjusted according to the requirements on the premise of conforming to the concept of the present invention.

As shown in FIG. 7, an interposer 6 is formed on the metal silicide layer 41 and the pure metal layer 5, and then a plurality of contact plugs 7 are formed in the interposer 6 as shown in FIG. The plurality of contact plugs 7 includes at least one first contact plug 71 and at least one second contact plug 72 for respectively connecting the cathode and the anode in use. The embodiment shown in FIG. 9 has a first contact plug 71 for electrically connecting the cathode and two second contact plugs 72 for electrically connecting the anode. In other embodiments of the present invention, the first contact plug 71 and the second contact plug 72 are both A plurality of them can also be singular. In order to form a path between the cathode and the anode, the first contact plug 71 is electrically connected to the metal telluride layer 41 (on the left side in the drawing), and the second contact plug 72 is electrically connected to the metal telluride layer 41. Along from the second side of the first side (the right side in the figure), the first side and the second side of the metal telluride layer 41 are delimited by the pure metal layer 5. The method of forming the contact plug 7 may be a conventional method, for example, first forming an interposer 6 on the isolation structure 3, the pure metal 5 layer and the metal telluride layer 41, and then etching to form a plurality of via holes in the intermediary. In the layer 6, and forming a first contact plug 71 and a second contact plug 72 in the plurality of through holes.

Finally, as shown in FIGS. 9-10, a metal layer 8 is formed on the contact plug 7 in FIG. 9, which comprises a first metal layer 81 and a second metal 82. The first metal layer 81 is formed on the first contact plug 71 to electrically connect the first contact plug 71, and the second metal layer 82 is formed on the second contact plug 72 to electrically connect the second contact plug. Plug 72. Thereafter, as shown in FIG. 10, a protective layer 9 is formed on the first metal layer 81, the second metal layer 82, and the interposer 6. The interposer 6 and the protective layer 9 may use a low dielectric (low k) or ultra-low k constant material as needed.

The electric fuse provided by the present invention is composed of a metal telluride layer 41 and a pure metal layer 5. When a voltage is supplied to the electric fuse structure provided by the present invention, metal ions in the electric fuse are pushed from the cathode to the anode due to electromigration, resulting in an increase in the resistance value of the electric fuse to form an open circuit. The test results show that the product in which the metal telluride layer 41 is formed on the doped layer 22 performs better than the undoped polysilicon layer 2. In order to prevent the metal ions in the metal telluride layer 41 from remaining on the doped layer 22, a small amount of current conduction problem may occur after the fuse is caused, causing a decrease in the resistance value, and the doping layer 41 is separated by the isolation structure 3 at the same time. Forming a pure metal layer 5 on the isolation structure 3, between the anode and the cathode, enhancing the metal ion shifting effect produced by the electromigration effect to ensure complete melting of the electric fuse (where the complete fuse is not limited to the structural disconnection, as long as After the fuse, the resistance value can be raised to a preset value).

In addition, in practical product applications, doped layer 22 may need to be The elements are isolated and thus may also comprise outer isolation structures on either side of the doped layer 22 and are the same width or wider than the doped layer 22 in the doped layer 22. 10a and 10b, the outer isolation structures 31 and 32 are located on the substrate 1, on both sides of the doping layer 22, which may be formed simultaneously with the isolation structure 3, thus forming an outer side isolation structure 31 as shown in Figure 10a; In another embodiment of the invention, it may be formed after the formation of the metal telluride layer 41, thus forming an outer side isolation structure 32 as shown in FIG. 10b. The order of forming the outer isolation structure may be adjusted according to different processes, as long as it can effectively achieve the effect of isolating the doped layer 22 without departing from the concept of the present invention. Furthermore, as explained above, the horizontal position of the isolation structure 3 between the doped layers 22 can be adjusted, and the isolation structure 3 can be disposed closer to one side of the anode in consideration of the electromigration effect and the possible position at which the fuse is generated.

SUMMARY OF THE INVENTION The present invention is directed to an electrical fuse structure and method of making the same to provide a better blown effect. The electric fuse provided by the invention can effectively avoid metal ion residue in the prior art under the condition of low voltage operation, especially when the operating voltage is between 2.5 and 3 volts, so that a better melting effect can be achieved. The resistance value after fusing is at least greater than 10,000 ohms (Ω), providing a good circuit blocking effect.

Although the present invention has been disclosed above by way of example, it is not intended to limit the invention. Anyone having ordinary knowledge in the field can make some changes and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

1‧‧‧Substrate

3‧‧‧Isolation structure

5‧‧‧Pure metal layer

6‧‧‧Intermediary

7, 71, 72‧‧‧ contact plugs

8, 81, 82‧‧‧ metal layers

9‧‧‧Protective layer

11‧‧‧Component layer

12‧‧‧Oxide layer

22‧‧‧Doped layer

41‧‧‧metal telluride layer

Claims (22)

An electric fuse structure comprising: a substrate; a doped layer on the substrate; an isolation structure between the substrate and the doped layer; a metal telluride layer located in the doped a layer of a pure metal on the isolation structure; a first metal layer on a first side of the metallization layer; and a second metal layer on the metallization layer away from the first layer a second side of one of the sides, wherein the first side and the second test system are bounded by the pure metal layer; a first contact plug is located between the first metal layer and the metal telluride layer, Electrically connecting the first side of the metal telluride layer to the first metal layer; and a second contact plug between the first metal layer and the metal telluride layer, electrically connecting the metal telluride The second side of the layer and the second metal layer. The electrical fuse structure of claim 1, wherein the substrate comprises: an element layer; and an oxide layer on the element layer, between the element layer and the doped layer. The electrical fuse structure of claim 1, wherein the doped layer comprises a different doping type. The electric fuse structure according to claim 3, wherein the doping layer has different doping types The doped layer is located in a portion of the isolation structure adjacent to the first contact plug, and a portion of the doped layer is located between the isolation structure and the second contact plug. The electrical fuse structure of claim 1, wherein the pure metal layer covers only the isolation structure. The electrical fuse structure of claim 1, wherein the pure metal layer covers the isolation structure and a portion of the metal halide layer. The electric fuse structure according to claim 1, wherein the pure metal layer contains the same metal component as the metal halide layer. The electrical fuse structure of claim 1, wherein the first contact plugs are singular and the second contact plugs are plural. The electrical fuse structure of claim 1, wherein the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse covers only a portion of the doped layer. The electrical fuse structure of claim 1, wherein the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse completely covers the doped layer. The electrical fuse structure of claim 1, further comprising: an outer isolation structure on the substrate and opposite sides of the doped layer. A method of manufacturing an electrical fuse structure, the method comprising: providing a substrate; Forming a doped layer and an isolation structure on the substrate, wherein the isolation structure is between the doped layers; forming a pure metal layer on the isolation structure and a metal halide layer on the doped layer; Forming a first contact plug and a second contact plug electrically connected to a first side of the metal halide layer and a second side away from the first side, wherein the first side and the first side Forming a first metal layer and a second metal layer, wherein the first contact plug electrically connects the first side of the metal telluride layer and the first metal layer, The second contact plug is electrically connected to the second side of the metal telluride layer and the second metal layer. The method of manufacturing an electrical fuse structure according to claim 12, wherein the substrate comprises: an element layer; and an oxide layer formed on the element layer, between the element layer and the doped layer . The method for manufacturing an electrical fuse structure according to claim 12, wherein the method for forming the doped layer comprises the steps of: forming a polysilicon layer on the substrate; patterning the polysilicon layer to form a a patterned polycrystalline germanium layer exposing the opening of the substrate; and an ion implantation step of the patterned polycrystalline germanium layer. The method for manufacturing an electric fuse structure according to claim 14, wherein the ion implantation The method includes: performing a first ion implantation step to make a first portion of the doped layer a first doping type; and performing a second ion implantation step to do the doping of a second portion The layer is of a second doping type. The method of manufacturing an electrical fuse structure according to claim 15, wherein the first portion is located between a first side of the doped layer and the opening, and the second portion is located in the blending One of the second side of the hybrid layer is between the opening. The method of manufacturing an electrical fuse structure according to claim 12, wherein the doped layer contains germanium, and the method of forming the pure metal layer and the metal germanide layer comprises the steps of: depositing a raw metal layer to form The doping layer and the isolation structure; and performing a heat treatment step of reacting a portion of the original metal layer on the doped layer with germanium in the doped layer to form the metal germanide layer, and simultaneously forming the A layer of pure metal is on the isolation structure. The method of manufacturing an electrical fuse structure according to claim 12, wherein the doped layer contains germanium, and the method of forming the pure metal layer and the metal germanide layer comprises the steps of: depositing a raw metal layer to form Depositing a doped layer with the isolation structure; performing a heat treatment step of reacting a portion of the original metal layer on the doped layer with germanium in the doped layer to form the metal telluride layer; removing unreacted a portion of the original metal layer; and forming the pure metal layer to cover the isolation structure. The method for manufacturing an electric fuse structure according to claim 12, wherein before the forming the first contact plug and the second contact plug, the method further comprises the steps of: forming an interposer in the isolation structure, the pure Forming a plurality of vias in the interposer; and forming the first contact plug and the second contact plug in the plurality of vias. The method for manufacturing an electrical fuse structure according to claim 12, further comprising the steps of: forming a protective layer on the first metal layer and the second metal layer, wherein the material of the protective layer can be low Constant dielectric material or ultra low constant dielectric material. The electrical fuse structure of claim 12, wherein the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse covers only a portion of the doped layer. The electrical fuse structure of claim 12, wherein the metal halide layer and the metal layer together form an electrical fuse, and the electrical fuse completely covers the doped layer.