TW201710640A - Manufacturing method of conductive via and method for inspecting critical dimension information of blind via - Google Patents

Abstract

A manufacturing method of conductive via and method for inspecting the critical dimension information of blind via are provided. The method for inspecting the critical dimension information of blind via includes the steps of providing a semiconductor substrate having a plurality of blind vias formed on a surface of the semiconductor substrate; capturing an image of each of the blind vias by an image capturing device to determine a center of each of the blind via at the surface; and measuring a depth at the corresponding center of each of the blind vias by a chromatic confocal interference apparatus.

Description

Conductive structure manufacturing method and blind hole key size information detecting method

The invention relates to a method for manufacturing a conductive structure and a method for detecting key dimensions such as two-dimensional and three-dimensional blind holes, in particular, for detecting a critical dimension of a through silicon via (TSV) in a three-dimensional integrated circuit process. Method and process of conductive structure.

In a three-dimensional integrated circuit, a semiconductor layer including a plurality of layers stacked on each other and a circuit layer and an element formed between the semiconductor layers, wherein the elements respectively formed on different semiconductor layers are usually worn by Conductive vias disposed within the semiconductor layer are electrically connected to each other for signal transfer.

When forming a conductive structure, a blind via is usually formed in the semiconductor layer, and then a conductive material is filled, and then a part of the semiconductor layer is removed by chemical mechanical polishing (CMP) to expose the hole. Conductive material. If the depth of the blind via does not meet the expectations, the conductive material cannot be exposed by the bottom of the polished semiconductor layer, and the electrical connection between the components cannot be established, which will result in no signal transmission between the components.

Therefore, in the three-dimensional integrated circuit, the shape parameters such as the cross-sectional area, the number, the depth, and the aspect ratio of the blind hole will affect the yield of the final product. However, in the past, in order to effectively count the above parameters, it is necessary to perform electrical testing after completing all the processes of the conductive structure, and then to perform "destructive" slicing and observing the perforated image, which is quite time consuming.

Therefore, if the shape parameters of the blind holes can be grasped in the process of forming the perforations, the optimization of the perforation process parameters can be accelerated, and the yield of the products can be further ensured. However, the blind holes formed in the semiconductor layer generally have an aspect ratio of about 5 to 10, and a small number of special processes require a high aspect ratio of more than 10 or more.

The conventional optical measuring device measures the depth of the blind hole by obliquely incident light into the hole and receiving the reflected light signal. However, in the aforementioned measurement method, the reflected light is easily blocked by the blind hole wall, and the depth or even the bottom topography of the center point of the blind hole cannot be effectively measured.

Accordingly, embodiments of the present invention provide a detection method that can be used to detect a three-dimensional topography of a blind hole, and a method of manufacturing the conductive structure. In the manufacturing method of the conductive structure, the blind hole detection method is integrated to obtain the shape information of the blind hole in real time.

Embodiments of the present invention provide a method for detecting a blind hole three-dimensional topography information parameter, which includes providing a substrate, wherein the substrate has a plurality of blind holes formed on a surface; and capturing multiple images through an image capturing device Obtaining a blind hole image of the blind hole on the surface, obtaining position information of a center point of each blind hole; and measuring each of the blinds by a color confocal interferometric microscopic device and according to position information The depth of the blind hole at the corresponding center point of the hole.

Another embodiment of the present invention provides a method of fabricating a conductive structure, comprising: providing a substrate, wherein the substrate has a surface and a bottom surface opposite to the surface; forming a plurality of blind holes in the base The surface of the material is captured by a plurality of blind holes on the surface by an image capturing device to obtain position information of each of the blind hole center points; Interferometric microscopy device, and according to the position information, measuring the blind hole depth of each of the blind holes at the corresponding center point; respectively forming a plurality of conductive columns in each of the blind holes Forming a conductive pillar in one of the blind holes; and a depth at the center point according to each of the blind holes.

Method and guide for detecting critical dimension information of blind holes provided by embodiments of the present invention In the manufacturing method of the electrical structure, the image capturing device is used to find the position of each blind hole at the center point of the surface, and then the color confocal interferometric microscopic device is used to measure each blind hole at the corresponding center point. depth.

The foregoing detection method can be integrated into the manufacturing process of the conductive structure, and is actually applied to the production line to immediately detect the shape parameters of the blind hole before forming the conductive column, and confirm whether the depth meets the expectation to improve the product yield. Moreover, obtaining the shape parameters of the blind holes is also beneficial to speed up the optimization of the process parameters.

In addition, the detection method of the embodiment of the invention can perform non-destructive detection on the wafer in the packaging process, and does not require additional production of the test piece, which can simplify the detection process and shorten the detection time.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

1, 1'‧‧‧ substrate

1a‧‧‧ surface

1b‧‧‧ bottom

102‧‧‧ position

100‧‧‧Blind hole

100C‧‧‧ center point

D‧‧‧Deep

R‧‧‧Blind hole diameter

P‧‧‧ spacing

VA‧‧‧Down Area

2‧‧‧Image capture device

20‧‧‧Light source

21‧‧‧Image sensing unit

22‧‧‧Processing unit

3‧‧‧Color confocal interferometric microscopy device

30‧‧‧Light source module

301‧‧‧Light generator

302‧‧‧Shaping components

300‧‧‧ Wideband light

31‧‧‧Light Modulation Module

300a‧‧‧First beam

300b‧‧‧second beam

300R, 300G, 300B‧‧‧ sub-light field

32‧‧‧Dispersive objective

33‧‧‧Non-dispersive objective

34‧‧‧Light processing module

341‧‧‧ Spatial Filter

342‧‧‧ Spectrometer

343‧‧‧Signal Processing Unit

35‧‧‧Reference plane mirror

300'‧‧‧ coincident beam

36‧‧‧Displacement platform

4, 4'‧‧‧ conductive column

5‧‧‧Insulation

100’‧‧‧through hole

Ra‧‧‧Red light reflection area

Ga‧‧‧Green light reflection area

Ba‧‧‧Blue light reflection zone

S100~S102, S200~S205‧‧‧ Process steps

FIG. 1 is a flowchart of a method for detecting blind key size information according to an embodiment of the present invention.

Figure 2A is a schematic cross-sectional view showing the image pickup device detecting the surface of the substrate.

Figure 2B shows a top plan view of the surface of the substrate in the area to be tested.

3 is a partial cross-sectional view showing the wafer package structure of the embodiment of the present invention in the step of FIG. 1.

Figure 4 shows a schematic view of the state when the broadband dispersion is projected onto the surface of the substrate.

Figure 5 is a flow chart showing a method of fabricating a conductive structure in accordance with an embodiment of the present invention.

6A to 6F are schematic cross-sectional views showing the conductive structure of the embodiment of the present invention in different steps, respectively.

Please refer to FIG. 1 , which shows a flow chart of a method for detecting blind hole key size information according to an embodiment of the present invention. Due to the process of three-dimensional integrated circuit packaging, or in the circuit board process, conductive vias are often used to connect the lines at different layers. Therefore, in the process of three-dimensional integrated circuit package or circuit board process, it will be Blind holes are formed on a multilayer or single layer substrate. Accordingly, the detection method provided by the embodiment of the present invention can be applied to detect the two-dimensional or three-dimensional key size and shape information of the blind hole formed in the foregoing process.

In step S100, a substrate is provided, wherein the substrate has a plurality of blind holes formed on a surface. The substrate is, for example, a semiconductor substrate, a metal substrate, an insulating substrate or a composite substrate. The semiconductor substrate is, for example, a tantalum substrate, a gallium arsenide substrate, a gallium nitride (GaN) substrate, or a tantalum carbide (SiC) substrate. The insulating substrate may be an epoxy resin substrate, a fiberglass board, a bakelite or other plastic material, and the composite substrate may be a composite substrate formed by pressing the insulating material and the metal sheet together.

In an embodiment of the invention, the substrate has a plurality of blind holes formed in the surface. In an embodiment of the invention, the blind holes have a high aspect ratio. In an embodiment, the blind holes have an aspect ratio of at least greater than five.

In addition, the process of components and circuits has been completed on the surface of the substrate, and the aforementioned components may be active components or passive components. In other embodiments, the substrate may also be a wafer or an insulating substrate that has not been fabricated with any components, and the invention is not limited thereto.

In step S101, a blind hole image of a plurality of blind holes on the surface is captured by an image capturing device to obtain position information of a center point of each blind hole on the surface. In addition, in the embodiment, in step S101, the width or diameter of each blind hole and the spacing between any two adjacent blind holes can also be obtained.

For details, please refer to FIG. 2A and FIG. 2B. FIG. 2A is a schematic cross-sectional view showing the surface of the substrate by the image capturing device, and FIG. 2B is a schematic plan view showing the surface of the substrate in the area to be tested. As described above, the substrate 1 has a surface 1a and a bottom surface 1b opposite to the surface 1a. On the surface 1a of the substrate 1, there are a plurality of blind holes 100.

After the image capturing device captures the image of the surface 1a of the substrate 1, the edge of each blind hole can be judged by image processing technology, thereby determining the position of the center point of each blind hole on the surface.

The image capturing device 2 includes a light source 20, an image sensing unit 21, and a processing unit 22, wherein the image sensing unit 21 is electrically connected to the processing unit 22, and the captured image is captured. The image is transmitted to the processing unit 22 for image processing. The light source 20 is configured to generate incident light to a region VA to be measured on the surface 1a of the substrate 1. The incident light may be visible light or invisible light, and the invisible light is, for example, infrared light. .

The image sensing unit 21 receives the reflected light reflected by the area to be tested VA to capture an image of the area to be tested. The image sensing unit 21 can be a Complementary Metal-Oxide-Semiconductor Sensor (CMOS Sensor) or a Charge-Coupled Device (CCD).

The processing unit 22 stores the identification data to perform image processing and analysis after receiving the image of the to-be-detected area captured by the image sensing unit 21, and further determines the edge of the blind hole 100 in the image of the area to be tested, thereby The position information of the blind hole 100 at the center point 100C of the surface 1a is determined.

Still further, after determining the edge information of the blind hole 100 and the position information of the center point 100C, the processing unit 22 may determine the distance from the edge of the blind hole 100 to the center point 100C. When the blind hole 100 has a circular or square shape in plan view on the surface 1a of the substrate 10, the aperture R of the blind hole can be obtained, and the diameter or width of the blind hole 100 can be further known. In another embodiment, when the blind hole 100 has an elongated shape in a plan view of the surface 1a of the substrate 10, the width of the blind hole 100 can be obtained.

In addition, in this embodiment, after obtaining the position information of the center point 100C of each blind hole 100, the processing unit 22 may further calculate the distance between the center points 100C of each two adjacent blind holes 100, A pitch P of each two adjacent blind holes 100 is obtained.

Next, in step S102, a color confocal interferometric microscopy device is used to measure the blind hole depth of each blind hole at a corresponding center point. By measuring the depth of the blind hole and the diameter or width of the blind hole, critical dimension information of the blind hole can be obtained.

In detail, please refer to FIG. 3 to show a schematic cross-sectional view of the surface of the substrate by using a color confocal interferometric microscopy apparatus according to an embodiment of the present invention.

The color confocal interferometric microscopy device 3 includes a light source module 30 and a light modulation module 31. A dispersive objective lens 32, a non-dispersive objective lens 33, and a light processing module 34.

The light source module 30 is used to generate a broadband light 300. The broadband light 300 can be a single color broadband light having a specific bandwidth range, such as red light (620 nm to 750 nm), green light (495 nm to 570 nm), blue light (476 nm to 495 nm), or other colored light. In addition, in another embodiment, the broadband light 300 may also be broadband light that is composited by a plurality of colors, such as visible light (white light), having a wavelength between 380 nm and 750 nm. In the present embodiment, the broadband light 300 is white light.

Specifically, the light source module 30 includes a light generator 301 and a shaping element 302. The light generator 301 is used to provide initial broadband light of a composite color, such as white light. The shaping element 302 is configured to adjust the initial broadband light generated by the light generator 301 to form a little broadband light or linear broadband light. In an embodiment, the shaping element 302 can be a spatial filtering component, such as a slit structure or a pinhole structure, but the invention is not limited thereto. In the present embodiment, the shaping element 302 is a pinhole. Therefore, after the initial broadband light emitted by the light generator 301 is adjusted by the shaping element 302, the broadband light 300 is a point broadband light.

Further, it is to be noted that if a single color of broadband light is to be generated, a color filter that allows only a single color to pass can be disposed directly between the light generator 301 and the shaping element 302. If you want to produce broadband light with two or three colors combined, you can use a color filter that corresponds to two or three colors.

The light modulation module 31 can be a beam splitter to divide the broadband light 300 into a first beam 300a and a second beam 300b.

The dispersing objective lens 32 is configured to generate axial dispersion of the first light beam 300a to form a plurality of sub-light fields 300R, 300G, and 300B (three are shown) for projecting onto the surface 1a of the substrate 1 to perform the blind hole 100. Detection. It is worth noting that for blind vias 100 having a high aspect ratio, the dispersive objective lens 32 has a lower numerical aperture that enhances the axial dispersion of the first beam 300a.

In addition, these sub-light fields 300R, 300G, and 300B have different depths of focus, respectively. Moreover, these sub-light fields 300R, 300G, and 300B can be measured differently Focus deep into the blind hole 100. In addition, each sub-light field 300R, 300G, and 300B has a different wavelength. In one embodiment, the sub-light fields 300R, 300G, and 300B can form a continuous spectrum.

Referring to FIG. 4, it is a schematic view showing a state when the broadband light dispersion is projected onto the surface of the substrate. In the embodiment of the present invention, white light is taken as an example for description. After the white light is dispersed, since the white light spectrum is a continuous spectrum composed of color light of different wavelengths (represented by red light 300R, green light 300G and blue light 300B), the dispersed white light, each of its components The depth of focus of the wavelength of light will be different.

In general, a light with a high frequency (small wavelength) has a shallow depth of focus, and a light with a low frequency (large wavelength) has a deep depth of focus, so when reflected onto the surface 1a of the substrate 1 and reflected, different wavelengths of reflection The state in which light is reflected on the surface 1a of the substrate 1 is also different.

Taking FIG. 4 as an example, it is assumed that at the position 102 of the surface 1a of the substrate 1 is the position of the depth of focus of the green light 300G, so for the point position 102, the intensity of the green light 300G will be concentrated at a point on the position. For other shades, the area of the reflection varies. The Ga shown in FIG. 4 represents a region where the green light 300G is concentrated after the first light beam 300a is reflected, Ra represents a region where the red light 300R is concentrated after the first light beam 300a is reflected, and Ba represents the reflection of the first light beam 300a, and the blue light 300B is concentrated. Area.

Based on the above principle, the sub-light fields 300R, 300G, and 300B form an object light after being reflected by the region to be tested VA, and the light of different wavelengths contained in the object light is reflected according to the area of the region to be tested VA, and The surface morphology of the area to be tested VA is different, but has different strengths.

On the other hand, the non-dispersive objective lens 33 is used to focus the second light beam 300b onto a reference plane mirror 35 such that the second light beam 300b is reflected by the reference plane mirror 35 to form reference light. When the reference light and the object light return to the light modulation module 31, the reference light and the object light are combined and interfere with each other to form a coincident light beam 300'.

The light processing module 34 is configured to receive the coincident light beam 300 ′ and generate a signal according to the received coincident light beam 300 ′, and then process the signal to estimate the three-dimensional shape information of the surface 1 a , wherein the signal is, for example, a color confocal Interference signal.

In detail, the optical processing module 34 includes a spatial filter 341, a spectrometer 342, and a signal processing unit 343. A spatial filter 341 is disposed on the path through which the coincident beam 300' passes to filter out the focused light. In the present embodiment, the spatial filter 341 has a pinhole structure.

The spectrometer 342 is configured to receive the coincident beam 300' filtered by the spatial filter 341, and to disperse the coincident beam 300' into a plurality of color lights having different wavelengths, and respectively convert the light intensities of the color lights into corresponding telecommunication signals. That is, in the present embodiment, after the spectrometer 342 receives the coincident beam 300', a color confocal interference signal is generated.

The signal processing unit 343 receives and processes the color confocal interference signal from the spectrometer 342 to derive the three-dimensional topographical information of the area to be tested VA. The signal processing unit 343 can calculate the three-dimensional topographical information of the VA to be tested by performing algorithms such as background light intensity, Fourier transform, filtering, and optical signal processing means.

In the present embodiment, the substrate 1 is disposed on a displacement platform 36. The displacement stage 36 requires at least a displacement movement in the Z-axis direction. In addition, the displacement platform 36 can also be combined with a driving unit in the X and Y axis directions, such as a combination of a screw, a guide rail and a motor, to adjust the position of the displacement platform on the XY plane, so that the sub-light fields 300R, 300G and 300B can be detected. Three-dimensional topographical information on different surfaces of the surface 1a of the substrate 1.

Further, after the image of the surface 1a of the substrate 1 is captured by the image capturing device 2, and the position of the blind hole 100 on the surface 1a is obtained, the position of the substrate 1 on the XY plane can be moved by the displacement platform 36. The sub-light fields 300R, 300G, and 300B are focused in the blind hole 100. It should be particularly noted that when the blind hole 100 is depth-measured by the color confocal interferometric microscopy device 3, the sub-light fields 300R, 300G, and 300B having different wavelengths in the wide-band light 300 described above can be directly used to obtain blindness. Three-dimensional topographical information such as the depth D of the hole 100 and the bottom topography.

That is to say, by using the color confocal interference technique, the above-mentioned wide-band light can be directly used to obtain depth information without performing Z-axis scanning. In detail, because of broadband The light contains a plurality of color lights having a wavelength of 400 nm to 700 nm, and the color lights of different wavelengths are correspondingly focused on different positions. According to this, a linear relationship between wavelength and depth can be established.

When scanning with wide-band light, only one wavelength of the color light will be focused on the surface of the area to be tested VA corresponding to the depth of the blind hole 100 (as shown in FIG. 4), thereby generating a peak in the feedback signal. By analyzing the feedback signal, the wavelength of the color light is obtained, and according to the linear relationship diagram described above, the depth corresponding to the wavelength can be known, so that the depth information of the blind hole 100 can be obtained.

Therefore, when the surface 1a of the substrate 1 is scanned by the color confocal interferometric microscopy device 3, it is not necessary to change the position of the substrate 1 on the Z axis by moving the displacement stage 36, so that the scanning speed can be increased.

The above manner can be realized by a control unit (not shown) electrically connected to the displacement platform 36. Specifically, after capturing the image of the area to be tested VA and determining the position information of the center point 100C of the blind hole 100, the image capturing device 2 transmits the position information of the center point 100C to the control unit. The control unit then controls the displacement platform 36 to adjust the position of the substrate 1 on the XY plane according to the received position information, so that the sub-light fields 300R, 300G and 300B can be projected to the center point 100C of the blind hole 100.

In another embodiment, the processing unit 22 of the image capturing device 2 can be electrically connected to the displacement platform 36 to directly control the displacement platform 36 according to the position information of the center point 100C of the blind hole 100, thereby making the color confocal The interferometric microscopy device 3 can directly measure the depth D of the blind hole 100 at the center point 100C.

Thus, in one embodiment, the image capture device 2 can be integrated with the color confocal interferometric microscopy device 3 into the same detection device. Further, after the position of the blind hole 100 is determined by the image capturing device 2, the blind hole 100 is directly detected by the color confocal interferometric microscopy device 3, thereby saving measurement time.

It should be noted that when each blind hole 100 is measured by the color confocal interferometric microscopy device 3, the sub-light fields 300R, 300G, and 300B are vertically incident on the blind hole 100, and are not subjected to the blind hole 100. Hole wall restrictions. Accordingly, the color confocal interferometric microscopy device 3 provided in the embodiment of the present invention can measure the depth D of the blind hole 100. And the bottom shape.

The embodiment of the invention provides a method for manufacturing a conductive structure. In the method for manufacturing a conductive structure, the image capturing device and the color confocal interferometric micro device are used for detecting to improve product yield.

Referring to FIG. 5, a flow chart of a method for fabricating a conductive structure according to an embodiment of the present invention is shown. In addition, please refer to FIG. 6A to FIG. 6F together, which respectively show schematic cross-sectional views of the conductive structure of the embodiment of the present invention in different steps.

In step S200, a substrate is provided. As shown in FIG. 6A, the substrate 1 has a surface 1a and a bottom surface 1b opposite to the surface 1a.

Next, in step S201, a plurality of blind holes are formed on the surface of the substrate. As shown in Figure 6B. The technical means for forming the blind via 100 may be a conventional technique such as lithography or etching. Also, the blind hole 100 has an aspect ratio of at least greater than three.

Then, in step S202, a plurality of blind hole images of the blind holes on the surface are captured by an image capturing device to obtain position information of a center point of each of the blind holes. The method of capturing the blind hole image by using the image capturing device and performing image processing is similar to the embodiment shown in FIG. 2, and details are not described herein again.

In addition, in an embodiment, the step of capturing a blind hole image of a plurality of blind holes on the surface by the image capturing device may further include: capturing the distance from the edge of the blind hole to the center point by the image capturing device To get the diameter or width of the blind hole.

In this embodiment, after measuring the position of each blind hole and its corresponding center point on the surface, it may further comprise calculating between the center points of each two adjacent blind holes Distance to obtain the pitch P of each of the two adjacent blind holes.

Next, in step S203, a color confocal interferometric microscopy device is used to measure the blind hole depth of each blind hole at the corresponding center point. The color confocal interferometric microscopy device is, for example, a color confocal interferometric microscopy device as shown in FIG. In addition, the bottom topography of each blind hole can be further measured by a color confocal interferometric microscopy device. That is to say, in step S202 to step S203, key size information of each blind hole can be obtained.

As shown in FIG. 6D, the blind hole depth D and the bottom topography of the blind hole 100 are measured by the color confocal interferometric microscopy device 3, which is similar to the embodiment shown in FIG. 3, and will not be described herein.

In addition, according to the critical size information of each blind hole, it can be determined whether multiple blind holes meet the process requirements. In detail, the signal processing unit 343 of the color confocal interferometric microscopy device 3 can determine whether the depth of the blind hole is greater than a predetermined depth. When the depth of the blind hole is not greater than the predetermined depth, the signal processing unit 343 can record the position and depth of the blind hole, and display a warning signal through the screen to notify the detector to further process the blind hole. In another embodiment, this step can also be omitted.

Next, in step S204, a conductive pillar is formed in each of the blind holes. The material constituting the conductive pillar is, for example, copper, a copper alloy or other conductive material. Referring to FIG. 6E, in the embodiment, before forming the conductive pillars 4 in each of the blind vias 100, the insulating layer 5 may be formed on the inner sidewall surface of the blind via 100, and then filled with a conductive material to form the conductive pillars 4.

Next, in step S205, a thinning process is performed on the bottom surface according to the depth of the blind hole at the center point, so that the blind hole is changed into a perforation, and the top and bottom of the conductive post are respectively The opposite openings of the perforations are exposed.

Please continue to refer to FIG. 6E and FIG. 6F. The thinning process may be to reduce the thickness of the substrate 1 from the bottom surface 1b of the substrate 1 by chemical mechanical polishing until the bottom of the conductive post 4' is exposed. Accordingly, the blind hole 100 originally formed on the substrate 1 has been changed to the through hole 100', and the bottom of the conductive post 4' is exposed by the opening below the through hole 100', so that the conductive post 4' can serve as a connecting base. The wires of the opposite side elements of the material 1'.

[Possible effects of the examples]

In summary, the beneficial effects of the present invention may be that the detection method provided by the embodiment of the present invention can be integrated into the manufacturing process of the conductive structure, and is actually applied to the production line to detect the blind hole immediately before forming the conductive column. The critical dimensions confirm that the depth is as expected to improve product yield. Moreover, obtaining the shape parameters of the blind holes is also beneficial to speed up the optimization of the process parameters.

In addition, the detection method of the embodiment of the invention can perform non-destructive detection on the wafer in the packaging process, and does not require additional production of the test piece, which can simplify the detection process and shorten the detection time.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, equivalent technical changes made by using the present specification and the contents of the drawings are included in the protection scope of the present invention. .

S100~S102‧‧‧ Process steps

Claims (7)

A method for detecting critical dimension information of a blind hole, comprising: providing a substrate, wherein the substrate has a plurality of blind holes formed on a surface; and the plurality of blind holes are taken by an image capturing device a blind hole image of the surface to obtain position information of a center point of each of the blind holes; and measuring each of the blind holes by a color confocal interferometric microscopic device and according to the position information The blind hole depth at the corresponding center point. The method for detecting blind hole key size information according to claim 1, wherein in the step of capturing, by the image capturing device, the plurality of blind holes in the blind hole image of the surface, further comprising : capturing, by the image capturing device, a distance from an edge of the blind hole to the center point to obtain a diameter or a width of the blind hole. The method for detecting blind hole key size information according to claim 2, wherein each of the blind holes passes through the blind hole depth and the diameter or width of the blind hole to obtain a critical size of each of the blind holes. News. The method for detecting blind hole key size information according to claim 1, wherein after obtaining the position information step of the center point of each of the blind holes, the method further comprises: calculating each of the two adjacent blind holes The distance between the center points to obtain the spacing of each of the two adjacent blind holes. A method of fabricating a conductive structure, comprising: providing a substrate, wherein the substrate has a surface and a bottom surface opposite the surface; forming a plurality of blind holes in the surface of the substrate; The image capturing device captures a plurality of blind hole images of the blind holes on the surface to obtain position information of a center point of each of the blind holes; through a color confocal interferometric microscopic device, and And measuring, according to the location information, a blind hole depth of each of the blind holes at the corresponding center point; Forming a conductive pillar in each of the blind holes; and performing a thinning process on the bottom surface according to the depth of the blind hole at the center point, so that the blind hole is changed into a through hole, and the The top and bottom of the conductive post are respectively exposed by the opposite openings of the perforations. The method of manufacturing a conductive structure according to claim 5, wherein in the step of capturing a plurality of the blind holes in the blind hole image of the surface by the image capturing device, and measuring each Before the step of the blind hole at the depth of the center point, the method further includes: capturing, by the image capturing device, the distance from the edge of the blind hole to the center point to obtain the diameter of the blind hole Or width. A method of manufacturing a conductive structure according to claim 5, wherein after the step of obtaining positional information of a center point of each of said blind holes, further comprising: calculating said each of said two adjacent said blind holes The distance between the center points to obtain the spacing of each of the two adjacent blind holes.