TW201708492A - Composition for grinding, and method for grinding silicon substrate - Google Patents

Abstract

Provided are a composition for grinding, which can achieve both excellent surface quality and high grinding speed, and a method for grinding a silicon substrate. The composition for grinding contains abrasive grains, a basic compound, and at least one of a multiple bond-containing compound or an anionic group-containing compound. The basic compound contains at least one of an alkali metal hydroxide, an alkali metal bicarbonate, an alkali metal carbonate, a cyclic compound, an ionic compound, and a cyclic diamine compound.

Description

Grinding composition and polishing method of tantalum substrate

The present invention relates to a polishing composition and a polishing method for a tantalum substrate.

In recent years, there have been other substrates for semiconductor substrates such as germanium wafers, and a higher-grade surface has been demanded. In particular, for the consideration of productivity, cost, etc., it is desirable to obtain a higher-grade surface in such a manner that the total polishing time (total polishing time) required for the grinding step is not extended. For example, as a polishing composition for polishing a tantalum wafer at a high polishing rate, a polishing composition has been proposed which contains: an abrasive compound, a carboxylic acid, a basic compound such as a quaternary ammonium salt (refer to, for example, Patent Documents 1, 2). However, in recent years, there has been an increasing demand for a high polishing rate, and a polishing composition capable of achieving a higher polishing rate is required. Further, the surface quality after polishing has an inverse relationship with the polishing rate, and when the polishing rate is to be increased, the surface quality tends to be lowered.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2013-505584

[Patent Document 2] Japanese Patent Publication No. 2013-527985

An object of the present invention is to solve the problems of the prior art as described above, and to provide a polishing composition and a polishing method for a tantalum substrate which can achieve both a good surface quality and a high polishing rate.

In order to solve the above problems, a polishing composition comprising: an abrasive grain; an alkali metal hydroxide, an alkali metal hydrogencarbonate, an alkali metal carbonate, and the following general formula (1) is provided in the same manner as the present invention. a cyclic compound, an ionic compound represented by the following general formula (2), and a basic compound of at least one of the cyclic diamine compounds represented by the following general formula (3); At least one of a compound having a multiple bond represented by the general formula (4) and an anionic group-containing compound represented by the following general formula (5),

The X ¹ in the general formula (1) represents a hydrogen atom, an amine group, or a bond to a C ¹ atom in the general formula (1), and when X ¹ represents a bond to a C ¹ atom, the general formula ( 1) H ¹ of the atoms is absent; and, (1) the general formula in which X ² represents a hydrogen atom based, amino, aminoalkyl, or bonded to the C ¹ atom, when X ² represents a system for When the C ¹ atom is bonded, the bond of the C ¹ atom to the N ¹ atom in the general formula (1) becomes a double bond, and the H ² atom in the general formula (1) is absent; more, the general formula ( 1) is an integer of 1 or more and 6 or less, m is an integer of 1 or more and 4 or less, and n is an integer of 0 or more and 4 or less;

In the general formula (2), A represents nitrogen or phosphorus; and in the general formula (2), R ¹ , R ² , R ³ and R ⁴ each independently represent an alkyl group having 1 or more carbon atoms and carbon. a hydroxyalkyl group having 1 or more and 4 or less, or an aryl group which may be substituted; more specifically, the X ^- line in the general formula (2) represents an anion;

R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ in the general formula (3) are each independently a hydrogen atom or an alkyl group having 4 or less carbon atoms; and, in general, p in the formula (3) , q, and r are integers of 1 or more and 4 or less; [Chemical 4] Y-(CR ¹¹ R ¹² ) _s -Z. . . (4)

The Y and Z systems in the general formula (4) each independently represent a functional group having at least one of carbon, nitrogen, oxygen, sulfur, phosphorus, and hydrogen and having a double bond or a triple bond; In the 4), R ¹¹ and R ¹² each independently represent a hydrogen atom, an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or an optionally substituted aryl group; The s in 4) is an integer of 0 or more and 2 or less;

The cyclic moiety in the general formula (5) is a six-membered ring of carbon, and the carbon-carbon bond is a single bond or a double bond; further, the Q group in the general formula (5) represents an anionic functional group; more generally X ³ , X ⁴ , X ⁵ , X ⁶ and X ⁷ in the formula (5) each independently represent hydrogen, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, a hydroxyl group or a salt thereof An alkyl group having 3 or less carbon atoms, an alkoxy group having 3 or less carbon atoms, a nitro group, or an amine group.

Moreover, as another aspect of the present invention, there is provided a method of polishing a tantalum substrate comprising polishing a tantalum substrate using the polishing composition according to the above-described state.

According to the present invention, both good surface quality and high polishing speed can be achieved.

[Best Mode for Carrying Out the Invention]

An embodiment of the present invention will be described in detail. The polishing composition of the present embodiment contains at least one of abrasive grains, a basic compound, a compound containing a multiple bond, and a compound containing an anionic group. The basic compound contains a cyclic compound represented by the following general formula (1). Alternatively, the basic compound may contain an alkali metal hydroxide, an alkali metal hydrogencarbonate, an alkali metal carbonate, a cyclic compound represented by the following general formula (1), and represented by the following general formula (2). At least one of the ionic compound and the cyclic diamine compound represented by the following general formula (3). Further, the compound having a multiple bond is represented by the following general formula (4), and the compound containing an anionic group is represented by the following general formula (5).

The X ¹ in the general formula (1) represents a hydrogen atom, an amine group, or a bond to a C ¹ atom in the general formula (1), and when X ¹ represents a bond to a C ¹ atom, the general formula ( The H ¹ atom in 1) is absent. Further, the X ² in the general formula (1) represents a hydrogen atom, an amine group, an aminoalkyl group, or a bond to a C ¹ atom, and when the X ² system represents a bond to a C ¹ atom, a C ¹ atom The bond with the N ¹ atom in the general formula (1) becomes a double bond, and the H ² atom in the general formula (1) is absent. Further, in the general formula (1), l is an integer of 1 or more and 6 or less, m is an integer of 1 or more and 4 or less, and n is an integer of 0 or more and 4 or less. Further, X ¹ and X ² in the general formula (1) may be the same or different.

The A system in the general formula (2) represents nitrogen or phosphorus. Further, R ¹ , R ² , R ³ and R ⁴ in the general formula (2) each independently represent an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or may be substituted. An aryl group (aryl group which may have a substituent). Further, the X ^- line in the general formula (2) represents an anion.

In the general formula (3), R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ each independently represent a hydrogen atom or an alkyl group having 4 or less carbon atoms. Further, p, q, and r in the general formula (3) are integers of 1 or more and 4 or less.

[Chemical 9] Y-(CR ¹¹ R ¹² ) _s -Z. . . (4)

The Y and Z systems in the general formula (4) each independently represent a functional group having at least one of carbon, nitrogen, oxygen, sulfur, phosphorus, and hydrogen and having a double bond or a triple bond. Further, R ¹¹ and R ¹² in the general formula (4) each independently represent a hydrogen atom, an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or a aryl group which may be substituted. Further, s in the general formula (4) is an integer of 0 or more and 2 or less. Further, Y and Z in the general formula (4) may be the same functional group or may be a different functional group.

The cyclic moiety in the general formula (5) is a six-membered ring of carbon, and the carbon-carbon bond is a single bond or a double bond. Further, the Q system in the general formula (5) represents an anionic functional group. Further, X ³ , X ⁴ , X ⁵ , X ⁶ and X ⁷ in the general formula (5) each independently represent hydrogen, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, and a hydroxyl group. Or a salt thereof, an alkyl group having 3 or less carbon atoms, an alkoxy group having 3 or less carbon atoms, a nitro group, or an amine group.

In the preferred embodiment of the polishing composition disclosed herein, the polishing composition does not substantially contain an oxidizing agent. When used for grinding When the oxidizing agent is contained in the article, the polishing composition is supplied to the object to be polished, and the surface of the object to be polished is oxidized to form an oxide film. Therefore, the polishing rate tends to be lowered. On the other hand, according to the above configuration, since the polishing composition does not substantially contain an oxidizing agent, such a problem can be avoided.

Such a polishing composition of the present embodiment can be suitably used for polishing a substrate of an elemental crucible.

Hereinafter, the polishing composition of the present embodiment will be described in detail. In addition, the measurement of various operations or physical properties described below is carried out under the conditions of room temperature (20 ° C or more and 25 ° C or less) and relative humidity of 40% or more and 50% or less unless otherwise specified.

(abrasive grain)

The type of the abrasive grains contained in the polishing composition of the present embodiment is not particularly limited, and any of inorganic particles, organic particles, and organic-inorganic composite particles can be used. Specific examples of the inorganic particles include particles made of a metal oxide such as vermiculite, alumina, cerium oxide, titanium oxide, or chromium oxide, or ceramics such as tantalum nitride, tantalum carbide, or boron nitride. Particles. Further, specific examples of the organic particles include polymethyl methacrylate (PMMA) particles. These abrasive grains may be used alone or in combination of two or more. Further, among the abrasive grains, vermiculite such as colloidal vermiculite, smoked vermiculite, or sol-gel vermiculite is preferable, and colloidal vermiculite is preferable.

Abrasive particles contained in the polishing composition of the present embodiment The average primary particle diameter can be 20 nm or more, preferably 30 nm or more, and more preferably 40 nm or more. When the average primary particle diameter of the abrasive grains is within the above range, the polishing rate of the object to be polished by the polishing composition can be increased. On the other hand, the average primary particle diameter of the abrasive grains contained in the polishing composition of the present embodiment can be 150 nm or less, preferably 100 nm or less, and more preferably 70 nm or less. When the average primary particle diameter of the abrasive grains is within the above range, the surface to be polished having a good surface roughness can be easily obtained by polishing. Further, the average primary particle diameter of the abrasive grains can be calculated from the measured specific surface area by, for example, a nitrogen adsorption method (BET method). The measurement of the specific surface area of the abrasive grains can be carried out, for example, using "FlowSorb II 2300" manufactured by Micromeritics.

The content of the abrasive grains in the polishing composition of the present embodiment can be 0.1% by mass or more, preferably 0.5% by mass or more, and more preferably 1% by mass or more. When the content of the abrasive grains is within the above range, the polishing rate of the object to be polished by the polishing composition can be increased. On the other hand, the content of the abrasive grains in the polishing composition can be 5% by mass or less, preferably 3% by mass or less, and more preferably 2% by mass or less. When the content of the abrasive grains is within the above range, the production cost of the polishing composition can be reduced. Moreover, the amount of the abrasive grains remaining on the surface of the object to be polished after polishing is lowered, and the surface of the object to be polished is improved in clarity.

The shape (outer shape) of the abrasive particles may be spherical or non-spherical. It is preferably a non-spherical shape. Examples of the shape of the non-spherical shape include, for example, an ellipsoidal shape having a tapered portion at the center portion. The shape of the 茧 is a spherical shape having a plurality of protrusions on the surface, a football shape, or the like. Further, the abrasive grain system may have a structure in which two or more primary particles are agglomerated.

The average value (average aspect ratio) of the major axis/short diameter ratio of the primary particles of the abrasive grains is not particularly limited, but is preferably 1.0 or more, preferably 1.1 or more, and more preferably 1.2 or more. Higher grinding speeds can be achieved by increasing the average length to side ratio of the abrasive particles.

Further, the average aspect ratio of the abrasive grains is preferably 4.0 or less, more preferably 3.0 or less, and still more preferably 2.5 or less from the viewpoint of reducing scratches and the like.

The shape (outer shape) or the average aspect ratio of the above-mentioned abrasive grains can be grasped by, for example, observation by an electron microscope. As a specific procedure for grasping the average aspect ratio, for example, a scanning electron microscope (SEM) is used, and a predetermined number (for example, 200) of abrasive grains that can recognize the shape of the individual particles is drawn to be externally attached to each particle image. The smallest rectangle. Then, regarding the rectangle drawn on each particle image, a value obtained by dividing the length of the long side (the value of the long diameter) by the length of the short side (the value of the short diameter) is used as the long diameter/short diameter ratio. (Long 寛) is calculated. The average aspect ratio can be obtained by arithmetically averaging the long turns ratio of the specified number of abrasive particles.

(alkaline compound)

The basic compound imparts a chemical action to the surface of the object to be polished such as a tantalum substrate to perform chemical polishing (chemical etching). By this, It is easy to increase the polishing speed at the time of polishing the object to be polished.

The polishing composition of the present embodiment contains an alkali metal hydroxide, an alkali metal hydrogencarbonate, an alkali metal carbonate, a cyclic compound represented by the above general formula (1), and an ion represented by the above general formula (2). At least one of the compound and the cyclic diamine compound represented by the above general formula (3). These basic compounds may be used alone or in combination of two or more.

The type of the alkali metal hydroxide is not particularly limited, and examples thereof include sodium hydroxide and potassium hydroxide. Further, the type of the alkali metal hydrogencarbonate is not particularly limited, and examples thereof include sodium hydrogencarbonate and potassium hydrogencarbonate. Further, the type of the alkali metal carbonate is not particularly limited, and examples thereof include sodium carbonate and potassium carbonate.

The type of the cyclic compound represented by the above formula (1) is not particularly limited, and examples thereof include the following cyclic amine compounds.

When X ¹ and X ² in the general formula (1) are a hydrogen atom, l in the general formula (1) is an integer of 1 or more and 6 or less, m is an integer of 1 or more and 4 or less, and n is 0 or more and 4 or less. The integer, m is preferably an integer of 2 or more and 4 or less, and n is preferably an integer of 1 or more and 4 or less. Specific examples of the cyclic amine compound in which X ¹ and X ² in the general formula (1) are a hydrogen atom include, for example, N-methylpiperazine, N-ethylpiperazine, and N-butylpiperazine. Wait.

Further, when X ¹ in the general formula (1) is an amine group and X ² is a hydrogen atom, l in the general formula (1) is an integer of 1 or more and 6 or less, and m is an integer of 1 or more and 4 or less, n is An integer of 0 or more and 4 or less is preferably an integer of 2 or more and 6 or less, m is preferably an integer of 2 or more and 4 or less, and n is preferably an integer of 1 or more and 4 or less. An example of the cyclic amine compound in which X ¹ in the general formula (1) is an amine group and X ² is a hydrogen atom is, for example, an aminoalkyl piperazine, and as such a specific example, for example, an N-amine Methylpiperazine, N-(2-aminoethyl)piperazine, N-(3-aminopropyl)piperazine. Among these, N-(2-aminoethyl)piperazine is preferred.

Further, as an example of the cyclic amine compound in which X ¹ in the general formula (1) is an amine group and X ² is an aminoalkyl group, for example, a bisaminoalkyl piperazine may be mentioned, and as a specific example, for example, , 4-bis(2-aminoethyl)piperazine, 1,4-bis(3-aminopropyl)piperazine.

Further, when X ¹ and X ² in the general formula (1) represent a bond to a C ¹ atom, l in the general formula (1) is an integer of 1 or more and 6 or less, and m is an integer of 1 or more and 4 or less. n is an integer of 0 or more and 4 or less, and l is preferably an integer of 3 or more and 6 or less, m is preferably 2 or 3, and n is preferably an integer of 0 or more and 2 or less. X ¹ and X ² in the general formula (1) are examples of the cyclic amine compound indicating a bond to a C ¹ atom, and for example, 1,8-diazabicyclo[5.4.0] Monocarb-7-ene, 1,5-diazabicyclo[4.3.0]-5-nonene.

The type of the ionic compound represented by the above general formula (2) is not particularly limited, and examples thereof include various ammonium salts or phosphonium salts.

The type of the anion (X ^- ) in the general formula (2) is not particularly limited, and may be an organic anion or an inorganic anion. For example, halide ions (for example, F ^- , Cl ^- , Br ^- , I ^- ), hydroxide ions (OH ^- ), tetrahydroborate ions (BH ₄ ^- ), nitrate ions, nitrite ions, chlorate ions , chlorite ion, hypochlorous acid ion, perchloric acid ion (ClO ₄ ^- ), sulfate ion, hydrogen sulfate ion, sulfite ion, thiosulfate ion, carbonate ion, phosphate ion, dihydrogen phosphate, phosphoric acid Hydrogen ion, sulfamate ion, carboxylic acid ion (such as formic acid ion, acetate ion, propionic acid ion, benzoic acid ion, glycine ion, butyric acid ion, citrate ion, tartaric acid ion, trifluoroacetic acid ion, etc.), organic sulfonate Acid ions (methanesulfonate ion, trifluoromethanesulfonate ion, benzenesulfonate ion, toluenesulfonate ion, etc.), organic phosphonic acid ion (methylphosphonate ion, phenylphosphonic acid ion, tolylphosphonate ion, etc.), Organic phosphate ions (such as ethyl phosphate ions) and the like. Preferred examples of the anion include OH ^- , F ^- , Cl ^- , Br ^- , I ^- , ClO ₄ ^- , BH ₄ ^- and the like, among which hydroxide ions (OH ^- ) are preferred.

In the general formula (2), R ¹ , R ² , R ³ and R ⁴ each independently represent an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or a substituted aryl group. The radicals, R ¹ , R ² , R ³ , and R ⁴ may all be identical to each other, or may be identical in part or different in the remainder, or may be different from each other.

Examples of the alkyl group having 1 or more and 4 or less carbon atoms include a methyl group, an ethyl group, a propyl group, and a butyl group. The alkyl groups may be linear, branched, or cyclic.

Further, examples of the hydroxyalkyl group having 1 or more and 4 or less carbon atoms include a hydroxymethyl group, a hydroxyethyl group, a hydroxypropyl group, and a hydroxybutyl group. The hydroxyalkyl groups may be linear, branched, or cyclic.

Further, as the aryl group, in addition to an aryl group having no substituent (for example, a phenyl group), for example, one or a plurality of hydrogen atoms may be taken. An aryl group substituted with a substituent (for example, an alkyl group having 1 or more carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, a hydroxyl group or a halogen group). Examples of such a aryl group which may be substituted include a phenyl group, a benzyl group, a naphthyl group, a naphthylmethyl group and the like.

Further, in the present invention, for example, a butyl group means a concept including the various structural isomers (n-butyl, isobutyl, sec-butyl, and tert-butyl). The same is true for other functional groups.

Examples of the ionic compound represented by the general formula (2) include a tetraalkylammonium salt or a tetraalkylphosphonium salt in which R ¹ , R ² , R ³ and R ⁴ are each an alkyl group. As such a specific example, for example, a tetramethylammonium salt, a tetraethylammonium salt, a tetrapropylammonium salt, a tetrabutylammonium salt, or a tetramethylphosphonium salt, a tetraethylphosphonium salt, a tetrapropylphosphonium salt, Tetrabutyl phosphonium salt.

Among the tetraalkylammonium salts, preferred are tetraalkylammonium salts in which R ¹ , R ² , R ³ and R ⁴ are linear alkyl groups. Further, among the tetraalkylammonium salts, a tetrabutylammonium salt such as tetrabutylammonium hydroxide is preferred.

Further, as another example of the ionic compound represented by the general formula (2), for example, a tetrahydroxyalkylammonium salt in which R ¹ , R ² , R ³ , and R ⁴ are both a hydroxyalkyl group (for example, a hydroxide) Or a tetrahydroxyalkyl phosphonium salt (for example, a hydroxide), and as such a specific example, for example, a tetrahydroxyethylammonium salt, a tetrahydroxypropylammonium salt, a tetrahydroxybutylammonium salt, or a tetrahydroxyethyl phosphonium salt , tetrahydroxypropyl phosphonium salt, tetrahydroxybutyl phosphonium salt.

Further, as another example of the ionic compound represented by the general formula (2), for example, a tetraarylammonium salt (for example, hydroxide) in which R ¹ , R ² , R ³ , and R ⁴ are both an aryl group or A tetraarylsulfonium salt (for example, a hydroxide), and as such a specific example, a tetraphenylammonium salt, a tetrabenzylammonium salt, a tetraphenylphosphonium salt, or a tetrabenzylphosphonium salt is exemplified.

Further, as another example of the ionic compound represented by the general formula (2), for example, one of R ¹ , R ² , R ³ , and R ⁴ is a hydroxyalkyl group, and the remainder is an alkyl group. . As such a specific example, for example, hydroxymethyltrimethylammonium salt, hydroxyethyltrimethylammonium salt, hydroxypropyltrimethylammonium salt, hydroxybutyltrimethylammonium salt, dihydroxyethyldimethyl group An ammonium salt, or a hydroxymethyl trimethyl phosphonium salt, a hydroxyethyl trimethyl phosphonium salt, a hydroxypropyl trimethyl phosphonium salt, a hydroxybutyl trimethyl phosphonium salt, or a dihydroxy ethyl dimethyl phosphonium salt.

Further, as another example of the ionic compound represented by the general formula (2), for example, one of R ¹ , R ² , R ³ and R ⁴ is an alkyl group, and the remainder is an aryl group. As such a specific example, for example, a trimethylphenylammonium salt, a triethylphenylammonium salt, a benzyltrimethylammonium salt, a methyltriphenylammonium salt, a tribenzylmethylammonium salt, or a trimethyl group A phenyl sulfonium salt, a triethyl phenyl sulfonium salt, a benzyltrimethyl sulfonium salt, a methyltriphenylphosphonium salt, a tribenzylmethyl phosphonium salt.

Further, as another example of the ionic compound represented by the general formula (2), for example, one of R ¹ , R ² , R ³ , and R ⁴ is a hydroxyalkyl group, and the remainder is an aryl group. . Specific examples thereof include a hydroxymethyltriphenylammonium salt, a tribenzylhydroxymethylammonium salt, a hydroxymethyltriphenylphosphonium salt, and a tribenzylhydroxymethylsulfonium salt.

The type of the cyclic diamine compound represented by the above formula (3) is not particularly limited, and examples thereof include those in which R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ are each a hydrogen atom. As such a specific example, for example, 1,4-diazabicyclo[2.2.2]octane, 1,5-diazabicyclo[3.2.1]octane, 1,5-diazabicyclo ring [3.2.2] decane, 1,6-diazabicyclo[4.2.1]nonane, 1,5-diazabicyclo[3.3.2]nonane, 1,6-diaza Cyclo [4.2.2] decane, 1,6-diazabicyclo[4.3.1]nonane, 1,5-diazabicyclo[3.3.3]undecane, 1,6-diaza Heterobicyclo[4.3.2]undecane, 1,6-diazabicyclo[4.4.1]undecane, 1,6-diazabicyclo[4.3.3]dodecane, 1, 6-diazabicyclo[4.4.2]dodecane, 1,6-diazabicyclo[4.4.3]tridecane, and 1,6-diazabicyclo[4.4.4] Tetralin. Among these, 1,4-diazabicyclo[2.2.2]octane is preferred.

Further, as another example of the cyclic diamine compound represented by the general formula (3), for example, one of R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ is a carbon number. 4 or less (preferably 1 or more and 3 or less, typically 1 or 2) alkyl groups, and the other 5 are hydrogen atom structures; R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ Two of them are alkyl groups having 4 or less carbon atoms, and the other four are hydrogen atom structures; three of R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ are carbon atoms. a number of 4 or less alkyl groups, and the other three are hydrogen atom structures; 4 of R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ are alkyl groups having 4 or less carbon atoms, The other two are hydrogen atom structures; ^{five of} R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ are alkyl groups having 4 or less carbon atoms, and the other one is a hydrogen atom. The structure: R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ are each a structure having an alkyl group having 4 or less carbon atoms.

Specific examples of the cyclic diamine compound represented by the general formula (3) are, for example, 2-methyl-1,4-diazabicyclo[2.2.2]octane, 2- Ethyl-1,4-diazabicyclo[2.2.2]octane, 2-propyl-1,4-diazabicyclo[2.2.2]octane, 2-butyl-1,4 -diazabicyclo[2.2.2]octane, 2,5-dimethyl-1,4-diazabicyclo[2.2.2]octane, 2,5-diethyl-1,4 -diazabicyclo[2.2.2]octane, 2,5-dipropyl-1,4-diazabicyclo[2.2.2]octane, 2,5-dibutyl-1,4 -diazabicyclo[2.2.2]octane, 2-methyl-5-ethyl-1,4-diazabicyclo[2.2.2]octane.

As another basic compound, ammonia, an amine, etc. may be contained. Specific examples of the amine include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, and N-(β-amino group. Ethyl)ethanolamine, hexamethylenediamine, di-ethyltriamine, tri-ethylidenetetraamine, anhydrous piperazine, piperazine hexahydrate, azoles such as hydrazine, imidazole or triazole. These basic compounds may be used alone or in combination of two or more.

In the polishing composition of the present embodiment, the content of the basic compound can be 0.001% by mass or more, preferably 0.01% by mass or more, and more preferably 0.05% by mass or more. When the content of the basic compound is within the above range, the polishing rate of the object to be polished by the polishing composition can be increased. On the other hand, the content of the basic compound in the polishing composition can be 5% by mass or less, preferably 3% by mass or less, and more preferably 1.5% by mass or less. When the content of the basic compound is within the above range, the production cost of the polishing composition can be reduced.

(compounds containing multiple bonds, compounds containing anionic groups)

The polishing composition of the present embodiment contains the above general formula (4) At least one of the compound having a multiple bond and the anion group-containing compound represented by the above general formula (5). Thereby, the surface roughness of the surface to be polished of the object to be polished can be kept good, and the polishing rate can be easily improved.

The acid dissociation constant pKa of the compound containing a multiple bond and the compound containing an anionic group is preferably 2 or more and 7 or less. When the acid dissociation constant pKa is within this numerical range, the effect on the nucleophilicity of the object to be polished can be more effectively exhibited, and the above effect is further improved. When the compound having a multiple bond or the compound containing an anionic group is dissociated in multiple stages, at least one acid dissociation constant pKa may be within the above numerical range.

The type of the compound having a multiple bond contained in the polishing composition of the present embodiment is not particularly limited as long as it is a compound represented by the general formula (4), but Y and Z in the general formula (4) are the same. a functional group having a carbon-carbon double bond, a carbon-oxygen double bond, a nitrogen-oxygen double bond, a sulfur-oxygen double bond, or a phosphorus-oxygen double bond is preferred, and has a phenyl group, a carboxyl group, a carbonyl group, a thiol group, Functional groups of an ester group, a nitro group, a sulfo group, a phosphonium group, or an amine group are also preferred. Then, Y and Z in the general formula (4) are preferably a phenyl group, a carboxyl group, a carbonyl group or a fluorenyl group, and a carboxyl group or a carbonyl group is more preferred.

Further, Y or Z in the general formula (4) is preferably a functional group having a carbon-nitrogen triple bond, for example, a functional group having a cyano group.

Further, the compound having a multiple bond represented by the general formula (4) may have a functional group such as an amine group.

Multi-keys represented by such general formula (4) Specific examples of the compound include, for example, a dicarboxylic acid such as malonic acid, oxalic acid or malic acid, or methacrylic acid or cyanoacetic acid, and among them, malonic acid is preferable. Since the dicarboxylic acid has two carboxyl groups, the nucleophilicity of the object to be polished such as a ruthenium substrate is strong. The compound having a multiple bond represented by the above formula (4) may be used alone or in combination of two or more.

In addition, the type of the anion group-containing compound to be contained in the polishing composition of the present embodiment is not particularly limited as long as it is a cyclic compound represented by the general formula (5). The cyclic moiety in the general formula (5) is a six-membered ring of carbon. Since the carbon-carbon bond is a single bond or a double bond, the cyclic moiety in the general formula (5) may be, for example, a cyclohexane ring. It may be a benzene ring, but is preferably a benzene ring. The Q in the general formula (5) is preferably a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, or a hydroxyl group or a salt thereof, and is preferably a carboxyl group.

Specific examples of the anion group-containing compound represented by the general formula (5) include benzoic acid (the cyclic moiety in the general formula (5) is a benzene ring, Q is a carboxyl group, and X ³ , X. ⁴ , X ⁵ , X ⁶ , and X ^{7 are} all hydrogen compounds), benzenedicarboxylic acid (the cyclic moiety in the general formula (5) is a benzene ring, Q is a carboxyl group, X ³ , X ⁴ , Any one of X ⁵ , X ⁶ , and X ⁷ is a carboxyl group and all of the remaining compounds are hydrogen), and trimellitic acid (the cyclic moiety in the general formula (5) is a benzene ring, Q, X ³ And X ⁵ is a carboxyl group, X ⁴ , X ⁶ , and X ⁷ are hydrogen compounds), hydroxybenzoic acid (the cyclic moiety in the general formula (5) is a benzene ring, Q is a carboxyl group, X ³ , X ⁴ , Any one of X ⁵ , X ⁶ , and X ⁷ is a hydroxyl group and all of the remaining compounds are hydrogen), methoxybenzoic acid (the cyclic moiety in the general formula (5) is a benzene ring, and Q is a carboxyl group. Any one of X ³ , X ⁴ , X ⁵ , X ⁶ , and X ⁷ is a methoxy group and all of the remaining compounds are hydrogen). The anionic group-containing compound represented by the above formula (5) may be used alone or in combination of two or more.

In the polishing composition of the present embodiment, the total content of the compound containing a multiple bond and the compound containing an anionic group may be 0.005% by mass or more, preferably 0.05% by mass or more, and more preferably 0.1% by mass. the above. When the total content of the compound containing a multiple bond and the compound containing an anionic group is within the above range, the polishing rate of the object to be polished by the polishing composition can be increased. On the other hand, the total content of the multi-bond-containing compound and the anionic group-containing compound in the polishing composition may be 5% by mass or less, preferably 2% by mass or less, and more preferably 0.6% by mass. the following. When the total content of the compound containing a multiple bond and the compound containing an anionic group is within the above range, the production cost of the polishing composition can be lowered.

(pH)

The pH of the polishing composition of the present embodiment is not particularly limited, and may be 9.0 or more and 11.5 or less, and more preferably 10.0 or more and 10.8 or less. As long as the pH is within the above range, the polishing speed will be further improved.

(other additives)

In the polishing composition of the present embodiment, in order to improve the performance, a water-soluble polymer (which may be a copolymer) may be added as needed. It may also be various additives such as these salts, derivatives, surfactants, chelating agents, and antifungal agents. However, it is preferred to contain substantially no oxidizing agent.

(water soluble polymer)

In the polishing composition of the present embodiment, a water-soluble polymer (which may be a copolymer or a salt or a derivative) which acts on the surface of the object to be polished or the surface of the abrasive grain may be added. Specific examples of the water-soluble polymer, the water-soluble copolymer, and the salts or derivatives include polycarboxylic acids such as polyacrylates, and polysulfonic acids such as polyphosphonic acid and polystyrenesulfonic acid. Moreover, as another specific example, a polysaccharide such as xanthan gum or sodium alginate, or a cellulose derivative such as hydroxyethylcellulose or carboxymethylcellulose may be mentioned.

Further, as another specific example, a water-soluble polymer having a pyrrolidone unit (for example, polyvinylpyrrolidone, polyvinylpyrrolidone polyacrylic acid copolymer, polyvinylpyrrolidone vinyl acetate) Copolymer), polyethylene glycol, polyvinyl alcohol, sorbitol monooleate, oxyalkylene polymer having a single or plural oxyalkylene units, and the like. Among these water-soluble polymers, a water-soluble polymer having a pyrrolidone unit is preferred, and polyvinylpyrrolidone is more preferred. These water-soluble polymers may be used alone or in combination of two or more.

(surfactant)

A surfactant may be added to the polishing composition of the present embodiment. As a surfactant, an anionic or nonionic interface can be mentioned. Sex agent. Among the surfactants, a nonionic surfactant can be suitably used.

Specific examples of the nonionic surfactant include a single polymer of an alkylene oxide, a copolymer of a plurality of types of alkylene oxides, and a polyoxyalkylene adduct. Among these nonionic surfactants, a copolymer of a plurality of types of alkylene oxides or a polyoxyalkylene adduct is preferably used.

(chelating agent)

A chelating agent may be added to the polishing composition of the present embodiment. The chelating agent forms a complex by capturing metal impurity components in the polishing system, thereby suppressing metal contamination of the ruthenium substrate. Specific examples of the chelating agent include a carboxylic acid-based chelating agent such as gluconic acid, an amine-based chelating agent such as ethylenediamine, di-ethyltriamine or trimethyltetramine, and ethylenediaminetetraacetic acid. Polyamine-based polycarboxylic acid chelating agent such as nitrogen triacetic acid, hydroxyethyl ethylenediamine triacetic acid, tris-ethyltetraamine hexaacetic acid, di-ethyltriamine pentaacetic acid, etc., 2-aminoethylphosphine Acid, 1-hydroxyethylidene-1,1-diphosphonic acid, amine tris(methylenephosphonic acid), ethylenediamine oxime (methylene phosphonic acid), diamethylenetriamine five (methylene Phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxyl -1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyphosphonic acid, 2-phosphonium butane-1,2-dicarboxylic acid, An organic phosphonic acid-based chelating agent such as 1-phosphonium butane-2,3,4-tricarboxylic acid, a phenol derivative, or a 1,3-diketone. Among these chelating agents, an organic phosphonic acid chelating agent, particularly ethylenediamine oxime (methylene phosphonic acid) is preferred. These chelating agents may be used alone or in combination of two or more.

(mold inhibitor)

An antifungal agent may be added to the polishing composition of the present embodiment. Specific examples of the antifungal agent include oxazolines such as oxazolidine-2,5-dione.

(oxidant)

The polishing composition disclosed herein preferably contains substantially no oxidizing agent. When the polishing composition contains an oxidizing agent, the polishing composition is supplied to the object to be polished (for example, a germanium wafer), and the surface of the object to be polished is oxidized to form an oxide film, thereby making it necessary. The grinding time becomes longer. Specific examples of the oxidizing agent herein include hydrogen peroxide (H ₂ O ₂ ), sodium persulfate, ammonium persulfate, potassium permanganate, and sodium dichloroisocyanurate.

In addition, the fact that the polishing composition does not substantially contain an oxidizing agent means that at least the oxidizing agent is not intentionally contained. Therefore, it is inevitable to contain a trace amount from a raw material, a preparation method, etc. (for example, the molar concentration of the oxidizing agent in the polishing composition is 0.0005 mol/L or less, preferably 0.0001 mol or less, and preferably 0.00001 mol. The polishing composition for an oxidizing agent of an ear/L or less, particularly preferably 0.000001 mol/L or less, may be included in the concept of a polishing composition which does not substantially contain an oxidizing agent.

(water)

The water system becomes the other component for dispersing or dissolving the polishing composition. (Dispersion medium or solvent for (abrasive grains, basic compounds, compounds containing multiple bonds, compounds containing anionic groups, additives, etc.). In order to avoid the action of the other components contained in the polishing composition as much as possible, it is preferred to use, for example, water having a total content of transition metal ions of 100 ppb or less. The purity of water can be improved by, for example, removal of impurity ions using an ion exchange resin, removal of particles by a filter, distillation, or the like. Specifically, it is preferred to use ion-exchanged water, pure water, ultrapure water, distilled water or the like.

(Manufacturing method of polishing composition)

The method for producing the polishing composition of the present embodiment is not particularly limited, and at least one of "abrasive grains", "basic compound", "multiple bond-containing compound, and anionic group-containing compound", It can be produced by stirring and mixing in a liquid medium such as water in accordance with "various additives as desired". The temperature at the time of mixing is not particularly limited, and is preferably 10 ° C or more and 40 ° C or less, and heating may be performed in order to increase the dissolution rate. Further, the mixing time is also not particularly limited.

(grinding method)

The polishing system for polishing the object to be used in the polishing composition of the present embodiment can be carried out by a polishing apparatus or polishing conditions used in usual polishing. For example, a single-side polishing device or a double-side polishing device can be used.

For example, when a tantalum substrate is used as an object to be polished, when a single-sided polishing apparatus is used for polishing, a carrier called a carrier is used. The holder holds the crucible substrate, and presses the disc to which the polishing cloth is attached, on one surface of the crucible substrate, and polishes the disc while rotating the polishing disc to polish one side of the crucible substrate.

Further, when the ruthenium substrate is polished using a double-side polishing apparatus, a yoke substrate is held by a holder called a carrier, and the lap to which the polishing cloth is attached is pressed from the both sides of the ruthenium substrate to the ruthenium substrate. On the surface, both sides of the crucible substrate are polished by rotating the discs on both sides while supplying the polishing composition.

Even when any polishing apparatus is used, the ruthenium substrate is polished by the chemical action of the polishing composition against the substrate by friction (the friction between the polishing cloth and the polishing composition and the ruthenium substrate). .

As the polishing cloth, various materials such as polyurethane, non-woven fabric, and suede can be used. Further, in addition to the difference in materials, various physical properties such as hardness or thickness can be used. Further, those containing abrasive grains and those containing no abrasive grains can be used. Further, a groove-shaped structure having a pore-like structure such as a liquid-like polishing composition or a groover for applying a liquid-like polishing composition can be used.

In addition, the polishing load (pressure to be applied to the object to be polished) is not particularly limited, and may be 5 kPa or more and 50 kPa or less, preferably 8 kPa or more and 40 kPa or less, and more preferably 10 kPa or more and 30 kPa or less. When the polishing load is within this range, a sufficient polishing rate can be exhibited, and it is possible to suppress the damage of the object to be polished due to the load or the occurrence of damage on the surface of the object to be polished.

In the polishing conditions, the relative speed (linear velocity) of the polishing object to be polished and the object to be polished, such as a ruthenium substrate, is not particularly limited, and may be 10 m/min or more and 300 m/min or less, preferably 30 m/min or more. 200m / min or less. When the relative speed of the polishing cloth and the object to be polished is within this range, a sufficient polishing rate can be obtained. In addition, it is possible to suppress the damage of the polishing cloth due to the friction of the object to be polished, and further, the friction transmission to the object to be polished is sufficient, and the sliding state of the object to be polished can be suppressed, so that the polishing can be sufficiently performed.

In addition, the amount of the polishing composition to be supplied in the polishing conditions differs depending on the type of the object to be polished, the type of the polishing apparatus, and the polishing conditions, as long as the polishing composition can be polished without unevenness. A sufficient amount can be provided between the object and the polishing cloth. When the amount of the polishing composition is small, the polishing composition may not be supplied to the entire polishing object, or the polishing composition may be dried and solidified to cause a defect in the surface of the polishing object. On the other hand, when the amount of the polishing composition is large, it is uneconomical, and the excessive polishing composition (especially a liquid medium such as water) causes the friction to be impeded and hinders the polishing.

Further, before the final polishing step of the modified polishing such as mirror finishing, a preliminary polishing step of performing preliminary polishing using another polishing composition may be provided. When there is a damage caused by processing damage or transportation on the surface of the object to be polished, it takes a lot of time to mirror the damage by using one polishing step, and it is not economical. Damage to the smoothness of the surface of the object to be polished Hey.

Therefore, by removing the damage of the surface of the object to be polished in advance by the preliminary polishing step, the polishing time required in the final polishing step can be shortened, and an excellent mirror surface can be effectively obtained. As the preliminary polishing composition used in the preliminary polishing step, it is preferable to use a polishing force stronger than the final polishing composition used in the final polishing step. The polishing composition of the present embodiment can be used for the preliminary polishing step and the final polishing step, but is more suitable as a preliminary polishing composition.

Further, the polishing composition of the present embodiment is used after polishing the object to be polished, and can be reused for polishing the object to be polished. As an example of the method of using the polishing composition again, a method of recovering the polishing composition discharged from the polishing apparatus in a tank container and circulating it into the polishing apparatus again for polishing can be mentioned. When the polishing composition is recycled, the amount of the polishing composition discharged as the waste liquid can be reduced, so that the environmental burden can be reduced. Moreover, since the amount of the polishing composition to be used can be reduced, the manufacturing cost required for polishing the object to be polished can be suppressed.

When the polishing composition of the present embodiment is used again, one part of the abrasive grains, the basic compound, the compound containing a multiple bond, the compound containing an anionic group, the additive, etc. which are consumed and lost during polishing are used. It is preferable to use it as a component adjusting agent and to use it again and again. As the composition adjusting agent, an abrasive particle, a basic compound, a compound containing a multiple bond, a compound containing an anionic group, an additive, or the like can be used in an arbitrary mixing ratio. By using the addition to add a compositional modifier, Thereby, the polishing composition is adjusted to a composition suitable for reuse, and suitable polishing can be performed. The concentration of the abrasive grains, the basic compound, the compound containing a multiple bond, the compound containing an anionic group, and other additives contained in the composition adjusting agent is not particularly limited, and is appropriately determined depending on the size of the tank container or the polishing conditions. Adjust it.

In the present embodiment, an embodiment of the present invention is shown, and the present invention is not limited to the embodiment. Further, various modifications and improvements can be added to the present embodiment, and such a modified or improved form can be incorporated in the present invention. For example, the polishing composition of the present embodiment may be a one-liquid type or a two-liquid type such as a two-liquid type in which a part or all of the polishing composition component is mixed at an arbitrary ratio. Further, in the polishing of the object to be polished, the composition of the polishing composition of the present embodiment may be directly used for polishing, or a concentrate (for example, 10 times or more) of the polishing composition may be prepared and used as water. The diluted solution is polished by the diluted polishing composition.

[Examples]

The embodiment is shown below, and the present invention will be more specifically described with reference to Table 1.

Mixing the abrasive grains, the basic compound, the compound containing a multiple bond or the compound containing an anionic group, and the liquid medium by a colloidal vermiculite so as to have a content as shown in Table 1, The polishing particles were dispersed in water, and further potassium hydroxide was mixed to prepare polishing compositions of Examples 1 to 28 and Comparative Examples 1 to 7 having a pH of 10.5.

Further, in the polishing composition of Example 24, a water-soluble polymer polyvinylpyrrolidone (added as First Industrial Pharmaceutical Co., Ltd.) as an additive was added so as to have a content as shown in Table 1. Pitts call K-50). In Table 1, polyvinylpyrrolidone is referred to as "PVP". Further, in the polishing composition of Comparative Example 2, a compound containing a multiple bond and a compound containing an anionic group were not added. Further, in the polishing compositions of Comparative Examples 3 to 6, not only the compound containing a multiple bond but also the compound containing an anionic group were not added, and the content shown in Table 1 was added, and Table 1 was added. The "other ingredients" indicated. Further, in the polishing composition of Comparative Example 7, a basic compound and potassium hydroxide for pH adjustment were not added.

Further, "AEP" in Table 1 means N-(2-aminoethyl)piperazine, and "BAPP" means 1,4-bis(3-aminopropyl)piperazine. Further, "TMAH" means tetramethylammonium hydroxide, and "TBAH" means tetrabutylammonium hydroxide. Further, "TBPH" means tetrabutylphosphonium hydroxide, and "DABCO" means 1,4-diazabicyclo[2.2.2]octane.

The average primary particle diameters of the colloidal vermiculite used as the abrasive grains in the polishing compositions of Examples 1 to 28 and Comparative Examples 1 to 7 are as shown in Table 1. The average primary particle diameter is calculated from the specific surface area of the abrasive grains measured by the BET method and the density of the abrasive grains.

Using the polishing compositions of Examples 1 to 28 and Comparative Examples 1 to 7, the ruthenium wafer was polished according to the following polishing conditions. The conductive type of the germanium wafer is P type, the crystal orientation is <100>, and the resistivity is 0.1 Ω ‧ cm or more and less than 100 Ω ‧ cm. Further, the enamel wafer was cut into a rectangular plate shape, and the size was 60 mm in length and 60 mm in width.

(grinding conditions)

Grinding device: single-side grinding device made by Japan Engis Co., Ltd., model "EJ-380IN"

Polishing pad (grinding cloth): "MH S-15A" manufactured by Nitta Haas Co., Ltd.

Grinding load: 26.7kPa

Rotating speed of the grinding disc: 50min ^-1

Grinding head rotation speed: 40min ^-1

Grinding time: 10min

Speed of supply of the polishing composition: 100 mL/min (recycling)

Temperature of the polishing composition: 25 ° C

Then, the mass of the germanium wafer before polishing and the mass of the germanium wafer after polishing were measured, and the polishing rate was calculated by the following formula. The results are shown in Table 1.

[Poor quality of tantalum wafer before and after polishing] / [density of tantalum] / [area of polished surface] / [grinding time] / 10000

Further, the unit of the mass difference of the germanium wafer before and after the polishing is g, and the unit of the polishing speed is μm/min. Further, the density of the crucible was 2.33 g/cm ³ , the area of the surface to be polished was 36 cm ² , and the polishing time was 10 minutes.

Further, the surface roughness Ra of the surface to be polished after the completion of the polishing was measured. The results are shown in Table 1. In addition, the measurement of the surface roughness Ra was carried out under the conditions of a magnification of 10 times and a measurement area of 700 μm × 500 μm using a non-contact surface shape measuring machine (trade name "NewView 5032" manufactured by Zygo Co., Ltd.).

As can be seen from Table 1, the polishing compositions of Examples 1 to 28 have a high polishing rate and are excellent in surface roughness of the surface to be polished.

In contrast, the polishing composition of Comparative Example 1 is not a compound represented by the general formula (1) because the basic compound is high. However, although the polishing rate of the tantalum wafer is high, the surface roughness of the surface to be polished is difference. Further, since the polishing composition of Comparative Example 2 does not contain a compound containing a multiple bond and a compound containing an anionic group, the surface roughness of the surface to be polished is excellent, but the polishing rate of the silicon wafer is not sufficient. Further, in the polishing compositions of Comparative Examples 3 to 6, since the compound containing a multiple bond is not a compound represented by the general formula (4), although the surface roughness of the surface to be polished is excellent, the polishing rate of the silicon wafer is high. insufficient. Further, since the polishing composition of Comparative Example 7 does not contain a basic compound, the polishing rate of the silicon wafer is insufficient and the surface roughness of the surface to be polished is poor.

Claims (16)

A polishing composition comprising: an abrasive particle; an alkali metal hydroxide, an alkali metal hydrogencarbonate, an alkali metal carbonate, a cyclic compound represented by the following general formula (1), and the following general formula ( 2) a basic compound of at least one of the ionic compound and the cyclic diamine compound represented by the following general formula (3); and the multiple bond-containing compound represented by the following general formula (4) At least one of a compound and an anionic group-containing compound represented by the following general formula (5), The X ¹ in the general formula (1) represents a hydrogen atom, an amine group, or a bond to a C ¹ atom in the general formula (1), and when X ¹ represents a bond to a C ¹ atom, the general formula ( The H ¹ atom in 1) is absent; further, the X ² in the general formula (1) represents a hydrogen atom, an amine group, an aminoalkyl group, or a bond to a C ¹ atom, when the X ² system represents When the C ¹ atom is bonded, the bond of the C ¹ atom to the N ¹ atom in the general formula (1) becomes a double bond, and the H ² atom in the general formula (1) is absent; more, the general formula ( 1) is an integer of 1 or more and 6 or less, m is an integer of 1 or more and 4 or less, and n is an integer of 0 or more and 4 or less; In the general formula (2), A represents nitrogen or phosphorus; and in the general formula (2), R ¹ , R ² , R ³ and R ⁴ each independently represent an alkyl group having 1 or more carbon atoms and carbon. a hydroxyalkyl group having 1 or more and 4 or less, or an aryl group which may be substituted; more specifically, the X ^- line in the general formula (2) represents an anion; R ⁵ , R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ in the general formula (3) are each independently a hydrogen atom or an alkyl group having 4 or less carbon atoms; and, in general, p in the formula (3) , q, and r are integers of 1 or more and 4 or less; [Chemical 4] Y-(CR ¹¹ R ¹² ) _s -Z. . . (4) The Y and Z systems in the general formula (4) each independently represent a functional group having at least one of carbon, nitrogen, oxygen, sulfur, phosphorus, and hydrogen and having a double bond or a triple bond; R ¹¹ and R ¹² in the general formula (4) each independently represent a hydrogen atom, an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or an optionally substituted aryl group; The s in the general formula (4) is an integer of 0 or more and 2 or less; The cyclic moiety in the general formula (5) is a six-membered ring of carbon, and the carbon-carbon bond is a single bond or a double bond; further, the Q group in the general formula (5) represents an anionic functional group; more generally X ³ , X ⁴ , X ⁵ , X ⁶ and X ⁷ in the formula (5) each independently represent hydrogen, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, a hydroxyl group or a salt thereof An alkyl group having 3 or less carbon atoms, an alkoxy group having 3 or less carbon atoms, a nitro group, or an amine group. The polishing composition according to claim 1, wherein the basic compound is at least one selected from the group consisting of potassium hydroxide, potassium carbonate, aminoalkylpiperazine, and bisaminoalkylpiperazine. A polishing composition comprising: an abrasive particle; a basic compound containing a cyclic compound represented by the following general formula (1); a compound having a multiple bond represented by the following general formula (4); At least one of the anionic group-containing compounds represented by the general formula (5), The X ¹ in the general formula (1) represents a hydrogen atom, an amine group, or a bond to a C ¹ atom in the general formula (1), and when X ¹ represents a bond to a C ¹ atom, the general formula ( The H ¹ atom in 1) is absent; further, the X ² in the general formula (1) represents a hydrogen atom, an amine group, an aminoalkyl group, or a bond to a C ¹ atom, when the X ² system represents When the C ¹ atom is bonded, the bond of the C ¹ atom to the N ¹ atom in the general formula (1) becomes a double bond, and the H ² atom in the general formula (1) is absent; more, the general formula ( 1) is an integer of 1 or more and 6 or less, m is an integer of 1 or more and 4 or less, and n is an integer of 0 or more and 4 or less; [Chemical 7] Y-(CR ¹¹ R ¹² ) _s -Z. . . (4) The Y and Z systems in the general formula (4) each independently represent a functional group having at least one of carbon, nitrogen, oxygen, sulfur, phosphorus, and hydrogen and having a double bond or a triple bond; R ¹¹ and R ¹² in the general formula (4) each independently represent a hydrogen atom, an alkyl group having 1 or more and 4 or less carbon atoms, a hydroxyalkyl group having 1 or more and 4 or less carbon atoms, or an optionally substituted aryl group; The s in the general formula (4) is an integer of 0 or more and 2 or less; The cyclic moiety in the general formula (5) is a six-membered ring of carbon, and the carbon-carbon bond is a single bond or a double bond; further, the Q group in the general formula (5) represents an anionic functional group; more generally X ³ , X ⁴ , X ⁵ , X ⁶ and X ⁷ in the formula (5) each independently represent hydrogen, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, a hydroxyl group or a salt thereof An alkyl group having 3 or less carbon atoms, an alkoxy group having 3 or less carbon atoms, a nitro group, or an amine group. The polishing composition according to claim 3, wherein the basic compound is at least one of an aminoalkyl piperazine and a bisaminoalkyl piperazine. The polishing composition according to claim 1 or claim 3, wherein the basic compound is an aminoethylpiperazine. The polishing composition according to any one of claims 1 to 3, further comprising a water-soluble polymer. The polishing composition according to claim 6, wherein the water-soluble polymer is a water-soluble polymer having a pyrrolidone unit. The polishing composition according to claim 7, wherein the water-soluble polymer is polyvinylpyrrolidone. The polishing composition according to any one of claims 1 to 3, wherein the Y or Z in the general formula (4) has a functional group having a carbon-nitrogen triple bond. The polishing composition according to claim 9, wherein the Y or Z-based cyano group in the above general formula (4). The polishing composition according to any one of claims 1 to 3, wherein the Y or Z-based carboxyl group in the above general formula (4). The polishing composition according to any one of claims 1 to 3, wherein the compound having a multiple bond is malonic acid. The polishing composition according to any one of claims 1 to 3, wherein the Q-based carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphonic acid group or a salt thereof, or a hydroxyl group in the general formula (5) Its salt. The polishing composition according to any one of claims 1 to 3, wherein The Q group carboxyl group in the above general formula (5). The polishing composition according to any one of claims 1 to 3, wherein the anionic group-containing compound is a benzoic acid, a phthalic acid, a trimellitic acid, a hydroxybenzoic acid, or a methoxybenzoic acid. At least one of them. A method of polishing a tantalum substrate, comprising polishing a tantalum substrate using the polishing composition according to any one of claims 1 to 15.