TW201707105A - Substrate processing device, substrate processing system, manufacturing method of semiconductor device and program can inhibit non-uniformity characteristics of the semiconductor device - Google Patents

Abstract

The present invention relates to a substrate processing device, a substrate processing system, a manufacturing method of semiconductor device, and a program and recording media. PROBLEM TO BE SOLVED: To inhibit non-uniform characteristics of the semiconductor device. SOLUTION: To provide a receiving unit for receiving the film thickness distribution data of the silicon containing film formed on the substrate; a substrate carrying unit for carrying substrates; and a gas supplying unit that supplies gas such that the height difference of the hard photomask film on a substrate surface is within a specific range, wherein the hard photomask film is formed on a silicon containing film according to film thickness distribution having a different thickness distribution of the thickness distribution data.

Description

Substrate processing apparatus, substrate processing system, manufacturing method of semiconductor device, and program

The present invention relates to a substrate processing apparatus, a substrate processing system, a manufacturing method of the semiconductor device, a program, and a recording medium.

In recent years, semiconductor devices have a tendency to be highly integrated. Along with this, the pattern size is significantly miniaturized. These patterns are formed by the formation of a hard mask film or a photoresist film, photolithography, etching, and the like. At the time of formation, it is required to be uneven without causing characteristics of the semiconductor device.

As a method of forming a pattern, for example, there is a method of forming as disclosed in Patent Document 1.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-26399

However, from the processing problem, there is a problem that the width of the formed circuit or the like is uneven. Especially in a semiconductor device that is miniaturized, The unevenness has a large influence on the characteristics of the semiconductor device.

Accordingly, it is an object of the present invention to provide a technique that can suppress variations in the characteristics of a semiconductor device.

In order to solve the above problems, there is provided a signal receiving portion for receiving a film thickness distribution data of a ruthenium-containing film formed on a substrate, a substrate mounting portion on which the substrate is placed, and a ruthenium-containing film. The film thickness distribution of the film thickness distribution data is different from the film thickness distribution to form a hard mask film, and the height distribution of the hard mask film supplied into the substrate surface is a gas supply portion of a gas within a specific range.

According to the technique of the present invention, it is possible to suppress the unevenness of the characteristics of the semiconductor device.

200‧‧‧ wafer (substrate)

201‧‧‧Processing room

202‧‧‧Processing container

212‧‧‧Substrate mounting table

232‧‧‧ buffer room

234‧‧‧Spray

260‧‧‧ Controller

263‧‧‧Receipt Department

Fig. 1 is an explanatory view showing a manufacturing flow of a semiconductor device according to an embodiment.

Fig. 2 is an explanatory view of a wafer relating to an embodiment.

Fig. 3 is an explanatory view of a wafer relating to an embodiment.

Fig. 4 is an explanatory view of a polishing apparatus according to an embodiment.

Fig. 5 is an explanatory view of a polishing apparatus according to an embodiment.

Fig. 6 is an explanatory view showing a film thickness distribution of a poly-Si film according to an embodiment.

Fig. 7 is an explanatory view for explaining a processing state of a wafer according to an embodiment.

Fig. 8 is an explanatory view showing a film thickness distribution of a poly-Si film according to an embodiment.

Fig. 9 is an explanatory view for explaining a processing state of a wafer according to an embodiment.

Fig. 10 is an explanatory view for explaining a film thickness distribution of a poly-Si film according to an embodiment.

Fig. 11 is an explanatory view showing a substrate processing apparatus according to an embodiment.

Fig. 12 is an explanatory view showing a head of a substrate processing apparatus according to an embodiment.

Fig. 13 is an explanatory view showing a gas supply system of a substrate processing apparatus according to an embodiment.

Fig. 14 is an explanatory view showing a gas supply system of a substrate processing apparatus according to an embodiment.

Fig. 15 is a schematic block diagram showing a controller according to an embodiment.

Fig. 16 is an explanatory view for explaining a processing state of a wafer according to an embodiment.

Fig. 17 is an explanatory view for explaining a processing state of a wafer according to an embodiment.

Figure 18 is a view for explaining the processing state of the wafer of the comparative example. Figure.

Fig. 19 is an explanatory view for explaining the processing state of the wafer of the comparative example.

Fig. 20 is an explanatory view for explaining the processing state of the wafer of the comparative example.

Fig. 21 is an explanatory view showing a system relating to an embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, a FinFET (Fin Field Effect Transistor) which is one of semiconductor elements will be described as an example of a manufacturing process of a semiconductor device using FIG. 1 to FIG.

(summary of FinFET manufacturing)

The FinFET is, for example, a convex structure (Fin structure) formed on a wafer substrate (hereinafter, simply referred to as a "wafer") called a 300 mm wafer, as shown in FIG. a film forming process (S101), and a first layer containing layer forming process (S102), and a grinding process (S103), and a film thickness measuring process (S104), and a second layer containing layer forming process (S105), and The film thickness measurement process (S106) and the patterning process (S107) are performed as necessary. Hereinafter, each of these items (S101 to S107) will be described.

(Gate insulation film forming project S101)

In the gate insulating film forming process S101, for example, the wafer 200 having the structure shown in FIG. 2 is carried in the gate insulating film forming apparatus. Fig. 2(A) is a perspective view showing a part of a structure formed on the wafer 200, and Fig. 2(B) is a cross-sectional view taken along line α-α' of Fig. 2(A). The wafer 200 is formed of tantalum or the like, and a convex structure 2001 as a channel is formed in a part thereof. The convex structures 2001 are provided in plural at specific intervals. The convex structure 2001 is formed by etching a portion of the wafer 200.

For convenience of description, the portion having no convex structure 2001 on the wafer 200 is referred to as a concave structure 2002. That is, the wafer 200 has at least a convex structure 2001 and a concave structure 2002. However, in the present embodiment, for convenience of description, the upper surface of the convex structure 2001 is referred to as a convex structural surface 2001a, and the upper surface of the concave structure 2002 is referred to as a concave structural surface 2002a.

An element separation film 2003 for electrically insulating the convex structure 2001 is formed on the concave structure surface 2002a between the adjacent convex structures 2001. The element separation film 2003 is configured, for example, by a tantalum oxide film.

The gate insulating film forming apparatus is a known leaflet apparatus capable of forming a thin film, and the description thereof is omitted. In the gate insulating film forming apparatus, as shown in FIG. 3(A), for example, a gate insulating film 2004 made of a dielectric such as a tantalum oxide film (SiO ₂ film) is formed. At the time of formation, the gate insulating film forming device supplies a gas containing a gas (for example, HCDS (hexachloroethane) gas) and an oxygen-containing gas (for example, O ₃ gas) to the gate insulating film forming device. These reactions are formed. Gate insulating films 2004 are formed on the convex structure surface 2001a and above the concave structure surface 2002a. After the gate insulating film is formed, the wafer 200 is carried out from the gate insulating film forming device.

(including bismuth film formation project S102)

Next, the ruthenium-containing film formation process S102 will be described.

After the wafer 200 is carried out from the gate insulating film forming apparatus, the wafer 200 is carried in the film forming apparatus. The ruthenium-containing film forming apparatus uses a general lobed CVD apparatus, and the description thereof is omitted. As shown in FIG. 3(B), in the ruthenium-containing film formation apparatus, a poly-Si film 2005 (also referred to as a ruthenium-containing layer or a ruthenium-containing film) composed of poly-Si (polycrystalline ruthenium) is formed in the gate. The pole insulating film 2004. When formed based on the silicon-containing film-forming apparatus supplying disilane (Si ₂ H ₆₎ gas, and then by the thermal decomposition of such poly-Si film is formed 2005. The poly-Si film 2005 is used as a gate electrode or a dummy gate electrode. The desired poly-Si film 2005 is formed by one process, and a film of a certain composition can be formed from the surface of the gate insulating film 2004 to the surface of the poly-Si film 2005. Accordingly, in the case of being used as a dummy gate, the etching volume per unit time in the plane of the substrate can be made constant. Further, when the poly-Si film 2005 is used as a gate electrode or the like, the performance of the gate electrode can be made constant.

After the poly-Si film 2005 is formed, the wafer 200 is carried out from the film-containing film forming apparatus. However, the film to be deposited on the convex structure surface 2001a is referred to as a poly-Si film 2005a, and will be formed on the concave structure surface. The film on 2002a is called poly-Si film 2005b.

(grinding engineering S103)

Next, a polishing (CMP, Cleaning Mechanical Polishing) project S103 will be described.

The wafer 200 carried out from the film-containing forming apparatus is carried into the polishing apparatus (CMP apparatus) 400.

Here, the poly-Si film formed in the ruthenium-containing film forming apparatus S102 will be described. As shown in FIG. 3(B), the convex structure 2001 and the concave structure 2002 are present in the wafer 200, and the heights of the poly-Si film 2005 are different in the substrate surface. Specifically, the height from the concave structure surface 2002a to the surface of the poly-Si film 2005a on the convex structure 2001 is higher from the concave structure surface 2002a, and the height of the surface of the poly-Si film 2005b on the concave structure surface 2002a is higher.

However, in the exposure engineering described later, the height of the poly-Si film 2005a must be made uniform with the height of the poly-Si film 2005b from the relationship with either or both of the etching processes. Therefore, as in this project, the poly-Si film 2005 is ground to make the height uniform.

The details of the polishing process S103 will be described below. After the wafer 200 is carried out from the film-containing film forming apparatus, the wafer 200 is carried into the polishing apparatus 400 shown in FIG.

In FIG. 4, 401 is a polishing disk, and 402 is a polishing cloth for polishing the wafer 200. The polishing disk 401 is connected to a rotating mechanism (not shown), and is rotated in the direction of the arrow 406 when the wafer 200 is polished.

The 403 is a polishing head, and a connecting shaft 404 is attached to the upper surface of the polishing head 403. The shaft 404 is connected to a rotating mechanism (not shown). Upper and lower drive mechanism. The wafer 200 is polished and rotated in the direction of arrow 407.

405 is a supply pipe for supplying a slurry (abrasive). During the polishing of the wafer 200, a slurry is supplied from the supply pipe 405 toward the polishing cloth 402.

Next, the details of the polishing head 403 and its peripheral structure will be described using FIG. 5. Fig. 5 is an explanatory view showing a peripheral structure of the polishing head 403 as a center. The polishing head 403 has a top ring 403a, a buckle 403b, and an elastic pad 403c. During the polishing, the outer side of the wafer 200 is surrounded by the buckle 403b, and is suppressed to the polishing cloth 402 via the elastic pad 403c. The buckle 403b is formed with a groove 403d through which the slurry passes, from the outer side to the inner side of the buckle. The groove 403d is formed in a circumferential shape in a plurality of shapes in accordance with the shape of the buckle 403b. The groove 403d is formed by replacing the unused fresh slurry and the used slurry.

Next, the processing operation of the CMP apparatus of this project will be described.

After the wafer 200 is carried into the polishing head 403, the slurry is supplied from the supply pipe 405, and the polishing disk 401 and the polishing head 403 are rotated. The slurry flows into the buckle 403b to polish the surface of the wafer 200. As a result of performing the polishing as described above, the heights of the poly-Si film 2005a and the poly-Si film 2005b are made uniform as shown in Fig. 3(C). After grinding at a specific time, move Out of the wafer 200. The height referred to herein means the height of the surface (upper end) of the poly-Si film 2005a and the poly-Si film 2005b. After polishing at a specific time, the wafer 200 is carried out from the polishing apparatus 400.

However, it is polished by the CMP apparatus 400 at the height of the uniform poly-Si film 2005a and the poly-Si film 2005b. As shown in FIG. 6, it is understood that there is a polished poly-Si film in the plane of the wafer 200. The height (film thickness) of 2005 is inconsistent. For example, it is understood that the film thickness of the outer peripheral surface of the wafer 200 can be seen to be smaller than the thickness of the central surface (distribution A in the figure), or the film thickness of the central surface of the wafer 200 is smaller than that of the outer peripheral surface. The film thickness distribution (distribution B in the figure).

Such a variation in the film thickness distribution is caused by a patterning process S107 to be described later, which causes a problem that the width of the pattern is uneven. Further, as a result, unevenness in the width of the gate electrode is caused, and as a result, there is a fear that the yield is lowered.

In this regard, the inventors of the present application conducted intensive studies, and as a result, learned that each of them has the cause of distribution A and distribution B. The reason will be explained below.

The reason for the distribution A is the supply method of the slurry for the wafer 200. As described above, the slurry supplied to the polishing cloth 402 is supplied from the periphery of the wafer 200 by the buckle 403b. Therefore, the slurry on the outer peripheral surface of the wafer 200 flows into the center surface of the wafer 200. On the other hand, an unused slurry flows into the outer peripheral surface of the wafer 200. The unused slurry is highly polished, and the outer peripheral surface of the wafer 200 is polished to the center surface. Learn from the above situation The film thickness of the poly-Si film 2005 is a distribution A.

The reason for becoming the distribution B is the wear of the buckle 403b. When a large number of wafers 200 are polished by the polishing apparatus 400, the front end of the buckle 403b pressed against the polishing cloth 402 is worn, and the contact surface with the groove 403d or the polishing cloth 402 is deformed. Therefore, there is a case where the slurry which is originally intended to be supplied is supplied to the inner circumference of the buckle 403b. In this case, since the slurry is not supplied to the peripheral surface of the wafer 200, the center surface of the wafer 200 is polished to be in a state where the outer peripheral surface is not polished. Accordingly, it was found that the film thickness of the poly-Si film 2005 became a distribution B.

The film thickness distribution of the distribution A or the distribution B is as described above due to the structure of the CMP apparatus, but it is not necessarily easy to change the structure of the CMP apparatus.

Therefore, in the present embodiment, the poly-Si layer 2005 which has been polished in the polishing process (S103) is corrected by the film thickness measurement process (S104) and the hard mask film formation process (S105). Deviation in film thickness distribution of the poly-Si layer 2005.

(Thickness measurement engineering S104)

In the film thickness measurement project (S104), the film thickness of the poly-Si layer 2005 polished in the polishing process (S103) is measured, and the film thickness in the plane of the poly-Si layer 2005 is obtained from the measurement result. Distributed data (hereinafter, simply referred to as "film thickness distribution data").

The film thickness was measured using a film thickness measuring device. That is, in the measurement of the film thickness of the poly-Si layer 2005, the film thickness measurement device is mounted. The substrate 200 is loaded into the wafer 200 that is carried out from the CMP apparatus. The film thickness referred to herein means, for example, the height from the concave structure surface 2002a to the surface of the poly-Si layer 2005. However, the film thickness measuring device is not limited to the optical type or the contact type, and may be a general configuration, and a detailed description thereof will be omitted.

In the film thickness measuring apparatus, when the wafer 200 after the polishing process (S103) is carried in, the center side and the outer side of at least each of the wafers 200 are measured on the poly-Si layer 2005 on the wafer 200. The film thickness (height) at the plural is obtained by obtaining the film thickness distribution data in the plane of the poly-Si layer 2005. From the measurement of such a measurement, it is known that the film thickness distribution after the polishing process (S103) of the poly-Si layer 2005 system is the distribution A or the distribution B. Then, after the film thickness distribution data is obtained by measurement, the wafer 200 is carried out from the film thickness measuring device.

The film thickness distribution data obtained by the film thickness measuring device is transmitted to at least the film thickness measuring device upper device. Further, it may be transferred to a substrate processing apparatus that performs a hard mask film forming process (S105) to be described later by the upper device. As a result, the host device (including the substrate processing device when it is transferred to the substrate processing device) is a film thickness distribution material that can be obtained from the film thickness measuring device.

(hard mask film forming project S105)

Next, a hard mask film forming process S105 will be described. The hard mask film 2006 formed in this project is a compound different from the poly-Si film 2005. As shown in FIG. 7, a hard mask film 2006 is formed on the polished poly-Si film 2005. The hard mask film 2006 is a hard film similar to the poly-Si film 2005, and is used, for example, as an etching stop film, a hard mask film such as a polishing stop film, or the like. In the case of forming a damascene wiring, it may be used as a barrier insulating film. The hard mask film 2006 may be, for example, a tantalum nitride film or a tantalum carbide film instead of a tantalum nitride film.

At the time of formation, the film thickness distribution of the poly-Si film 2005 after the polishing is corrected to form a hard mask film 2006 (singly referred to as a SiN film or a correction film). More preferably, the surface height of the hard mask film 2006 is formed to uniformly form the hard mask film 2006 in the plane of the wafer 200. The height referred to herein refers to the height to the surface of the hard mask film 2006, in other words, the distance from the concave structure surface 2002a to the surface of the hard mask film 2006.

Hereinafter, this project will be described using FIGS. 7 to 15 . Fig. 7 is a view showing a hard mask film 2006 formed in the present process in the case where the poly-Si film 2005 becomes the distribution A. Fig. 8 is an explanatory view for explaining the film thickness distribution A and the corrected film thickness distribution A'. Fig. 9 is a view showing a hard mask film 2006 formed in the present process in the case where the poly-Si film 2005 becomes the distribution B. Fig. 10 is an explanatory view for explaining the film thickness distribution B and the corrected film thickness distribution B'. 11 to 15 are explanatory views for explaining a substrate processing apparatus for realizing the present project.

In FIG. 7, (A) is a view of the wafer 200 after the hard mask film 2006 is formed from above, and FIG. 7(B) is an excerpt of the α-α' profile of FIG. 7(A). 200 central and its peripheral map.

In FIG. 9(A), a hard mask film 2006 is formed from above. In the subsequent diagram of the wafer 200, a map of the center of the wafer 200 and its outer periphery in the α-α' cross section of Fig. 9(A) is extracted.

Here, the hard mask film on the center surface of the wafer 200 is referred to as a hard mask film 2006a, and the outer peripheral surface is referred to as a hard mask film 2006b.

The wafer 200 carried out from the measuring device is carried into the substrate processing apparatus 900 of the hard mask film forming apparatus shown in FIG.

The substrate processing apparatus 900 controls the film thickness of the hard mask film 2006 in the substrate surface in accordance with the material measured in the film thickness measurement project S104. For example, if the data received from the host device is the data showing the distribution A, as shown in FIG. 7, the hard mask film 2006b on the outer peripheral surface of the wafer 200 is thickened, and the hard mask film 2006a on the center surface is compared. The hard mask film 2006b is thin and controls the film thickness. In addition, the data received from the host device is as shown in the display distribution B. As shown in FIG. 9, the hard mask film 2006a on the center surface of the wafer 200 is thickened, and the hard mask film 2006b on the outer peripheral surface is compared. The hard mask film 2006a is thin and controls the film thickness.

More preferably, from the concave structure surface 2002a, the laminated film of the first poly-Si film 2005 and the hard mask film 2006, that is, the height of the hard mask film formed on the poly-Si film, is present. The thickness of the hard mask film 2006 is controlled as a specific range in the plane of the wafer 200. In other words, the distribution of the height of the hard mask film 2006 in the surface of the substrate is within a specific range, and the film thickness distribution of the hard mask film is controlled. As a result, as shown in FIG. 7 and FIG. 9, the height H1a from the concave structure surface 2002a on the central surface of the wafer 200 to the upper end of the hard mask film 2006a, and the concave structure from the outer peripheral surface of the wafer 200 can be obtained. Surface 2002a to hard mask film 2006b The height H1b of the end is consistent.

Next, a substrate processing apparatus 900 that can control the thickness of each of the hard mask film 2006a and the hard mask film 2006b will be specifically described.

The processing apparatus 900 according to this embodiment will be described. The substrate processing apparatus 900 is configured as a lobular substrate processing apparatus as shown in FIG.

The substrate processing apparatus 900 includes a processing container 202. The processing container 202 is, for example, circular in cross section, and is configured as a flat closed container. Further, the processing container 202 is configured by, for example, a metal material such as aluminum (Al) or stainless steel (SUS) or quartz. In the processing container 202, a processing space (processing chamber) 201 in which a wafer 200 such as a germanium wafer or the like is processed is formed, and a transport space 203 is formed. The processing container 202 is constituted by an upper container 202a and a lower container 202b. A compartment plate 204 is provided between the upper container 202a and the lower container 202b. The space surrounding the upper processing container 202a, the space above the compartment plate 204, is referred to as a processing space (also referred to as a processing chamber) 201, and the space surrounding the lower container 202b is lower than the compartment plate 204. The space is referred to as a transport space 203.

The substrate carry-out port 206 adjacent to the gate valve 205 is provided on the side surface of the lower container 202b, and the wafer 200 is moved between the vacuum transfer chamber and the vacuum transfer chamber (not shown) by the substrate carry-out port 206. A lift pin 207 is provided in plural to the bottom of the lower container 202b.

In the processing chamber 201, a substrate mounting portion 210 for supporting the wafer 200 is provided. The substrate mounting portion 210 has a mounting wafer 200 The mounting surface 211 and the substrate mounting table 212 having the mounting surface 211 on the surface. Further, a heater 213 as a heating portion is provided. When the heating portion is provided, the wafer 200 is heated to enhance the film quality of the film formed on the wafer 200. The through holes 214 through which the lift pins 207 are inserted through the substrate mounting table 212 may be provided at positions corresponding to the lift pins 207.

The substrate stage 212 is supported by the shaft 217. The shaft 217 penetrates the bottom of the processing container 202 and is connected to the lifting mechanism 218 outside the processing container 202. When the shaft 217 and the substrate stage 212 are moved up and down by the operation of the elevating mechanism 218, the wafer 200 can be placed on the substrate mounting surface 211 to be lifted and lowered. However, the periphery of the lower end portion of the shaft 217 is covered by the bellows 219, and the inside of the processing chamber 201 is kept airtight.

When the substrate mounting table 212 is transported to the wafer 200, the substrate mounting surface 211 is lowered at a position (wafer transfer position) where the substrate loading/unloading port 206 is formed, and when the wafer 200 is processed, as shown in FIG. As shown, wafer 200 is raised to a processing location (wafer processing location) within processing chamber 201.

Specifically, when the substrate stage 212 is lowered to the wafer transfer position, the upper end portion of the lift pin 207 protrudes from the upper surface of the substrate mounting surface 211, and the lift pin 207 supports the wafer 200 from below. In addition, when the substrate mounting table 212 is raised to the wafer processing position, the lift pins 207 are buried from the upper surface of the substrate mounting surface 211, and the substrate mounting surface 211 supports the wafer 200 from below. However, l The pin 207 is in direct contact with the wafer 200, and is preferably formed of a material such as quartz or alumina. However, the elevating mechanism is provided on the lift pin 207, and the substrate stage 212 and the lift pin 207 may be configured to operate in opposite directions.

The heater 213 can individually heat the central surface of the center of the control wafer 200 and the outer peripheral surface of the center surface. For example, the center area heater 213a which is provided in the center of the substrate mounting surface 211 and which is regarded as a circumference from the top, and the circumferentially similar heater 213a are provided in the outer peripheral area heater 213b of the center area heater 213a. The central zone heater 213a heats the center surface of the wafer, and the outer zone heater 213b heats the outer circumferential surface of the wafer.

The central zone heater 213a and the outer zone heater 213b are connected to the heater temperature control section 215 by the respective power supply lines. The heater temperature control unit 215 controls the temperature of the center surface and the outer peripheral surface of the wafer 200 by controlling the power supply to each heater.

The substrate stage 213 is provided with a temperature measuring device 216a for measuring the temperature of the wafer 200, and a temperature measuring device 216b. The temperature measuring device 216a is provided at the center of the substrate mounting table 212 at a temperature in the vicinity of the center area heater 213a. The temperature measuring device 216b is provided on the outer circumferential surface of the substrate mounting table 212 by measuring the temperature in the vicinity of the outer region heater 213b. The temperature measuring device 216a and the temperature measuring device 216b are connected to the temperature information receiving unit 216c. The temperature measured by each temperature measuring device is transmitted to the temperature information receiving unit 216c. The temperature information received by the temperature information receiving unit 216c transmits the temperature information after the information Controller 260 is described. The controller 260 controls the heater temperature based on the temperature information received or the film thickness information received from the upper device 270. However, the temperature measuring device 216a, the temperature measuring device 216b, and the temperature information receiving unit 216c are used as the temperature detecting unit 216.

(exhaust system)

An exhaust port 221 for exhausting the ambient gas of the processing chamber 201 is provided on the inner wall of the processing chamber 201 (the upper container 202a). An exhaust pipe 224 as a first exhaust pipe is connected to the exhaust port 221, and an APC (Auto Pressure Controller) that controls the inside of the process chamber 201 to a specific pressure is connected in series to the exhaust pipe 224. The pressure regulator 222, and the vacuum pump 223. The first exhaust unit (exhaust fan) is mainly configured via the exhaust port 221, the exhaust pipe 224, and the pressure regulator 222. However, the vacuum pump 223 may be included in the first exhaust portion.

(buffer room)

A buffer chamber 232 is provided above the processing chamber 201. The buffer chamber 232 is configured via a side wall 232a and a ceiling 232b. The buffer chamber 232 contains a showerhead 234. A gas supply path 235 is formed between the inner wall 232a of the buffer chamber 232 and the shower head 234. That is, the gas supply path 235 is disposed around the outer wall 234b of the shower head 234.

For dividing the nozzle 234 and the wall of the processing chamber 201, The dispersion plate 234a is provided. The dispersion plate 234a is configured, for example, in a disk shape. When viewed from the processing chamber 201 side, as shown in FIG. 12, the gas supply path 235 is provided between the head side wall 234b and the side wall 232a, and is disposed around the horizontal direction of the dispersion plate 234.

The gas introduction pipe 236 and the gas introduction pipe 237 are inserted through the ceiling 232b of the buffer chamber 232. Further, a gas introduction pipe 238 and a gas introduction pipe 239 are connected. The gas introduction pipe 236 and the gas introduction pipe 237 are connected to the shower head 234. The gas introduction pipe 236 and the gas introduction pipe 238 are connected to a first gas supply system to be described later. The gas introduction pipe 237 and the gas introduction pipe 239 are connected to a second gas supply system to be described later.

The gas system introduced from the gas introduction pipe 236 and the gas introduction pipe 237 is supplied to the processing chamber 201 by the shower head 234. The gas system introduced from the gas introduction pipe 238 and the gas introduction pipe 239 is supplied to the processing chamber 201 through the gas supply path 235.

The gas system supplied from the shower head 234 is supplied to the center of the wafer 200. The gas system supplied from the gas supply path 235 is supplied to the edge of the wafer 200. The outer peripheral surface (edge) of the wafer refers to the outer periphery of the wafer center as described above. The head 234 is made of, for example, a material such as quartz, alumina, stainless steel, or aluminum.

(gas supply system) (first gas supply system)

Next, the first gas supply system will be described using FIG.

A1 of Fig. 13 is connected to A1 of Fig. 11, and A2 of Fig. 13 is connected to A2 of Fig. 11. That is, the gas supply pipe 241a is connected to the gas introduction pipe 236, and the gas supply pipe 242a is connected to the gas introduction pipe 238.

The gas supply pipe 241a is provided with a merging pipe 240b, a flow rate controller 241b, and a valve 241c from the upstream. The flow rate of the gas passing through the gas supply pipe 241a is controlled via the flow controller 241b and the valve 241c. A gas source 240a for the first process gas is disposed on the flow system of the junction pipe 240b.

The first process gas system feed gas, that is, one of the process gases.

Here, the first element is, for example, bismuth (Si). That is, the first process gas system is, for example, a helium containing gas. As the ruthenium-containing gas system, for example, a dioxane (Si ₂ H ₆ ) gas is used. However, as a gas-containing system containing dioxane, TEOS (Tetraethyl orthosilicate, Si(OC ₂ H ₅ ) ₄ )SiH ₂ (NH(C ₄ H ₉ )) ₂ (bis-tert-butylaminodecane) can be used. , abbreviated as: BTBAS), tetradimethylaminodecane (Si[N(CH ₃ ) ₂ ] ₄ , abbreviated: 4DMAS) gas, bisdimethylaminodecane (Si[N(C ₂ H ₅ ) ₂ ] ₂ H ₂ , abbreviated as: 2DEAS) gas, bis-tert-butylaminopurine (SiH ₂ [NH(C ₄ H ₉ )] ₂ , abbreviated: BTBAS) gas, hexamethyldioxane (C ₆ H ₁₉ NSi ₂ , abbreviated as: HMDS) or trimethyl decylamine ((SiH ₃ ) ₃ N, abbreviated: TSA), bismuth hexachloride (Si ₂ Cl ₆ , abbreviated: HCDS) and the like. However, the raw material of the first process gas may be any of a solid, a liquid, and a gas at normal temperature and pressure. The raw material of the first processing gas may be a gasifier (not shown) between the first gas supply source 243b and the MFC 243c when the normal temperature and the normal pressure are liquid. Here, the raw materials are described as gases.

It is preferable to connect to the downstream side of the valve 241c, and to connect the first inert gas supply pipe 243a for supplying an inert gas. The inert gas supply pipe 243a is provided with an inert gas source 243b, a flow rate controller 243c, and a valve 243d from the upstream. For the inert gas system, for example, helium (He) gas is used. The inert gas system is added to the gas flowing through the gas supply pipe 241a, and is used as a diluent gas. By controlling the flow rate controller 243c and the valve 243d, the concentration or flow rate of the processing gas supplied by the gas introduction pipe 236 and the head 234 can be more preferably tuned.

The gas supply pipe 242a connected to the gas introduction pipe 238 is provided with a merging pipe 240b, a flow rate controller 242b, and a valve 242c from the upstream. The flow rate of the gas passing through the gas supply pipe 242a is controlled via the flow controller 242b and the valve 242c. A gas source 240a for the first process gas is disposed on the flow system of the junction pipe 240b.

It is preferable to be connected to the downstream side of the valve 242c, and to connect the second inert gas supply pipe 244a for supplying the inert gas. The inert gas supply pipe 244a is provided with the inert gas source 244b, the flow rate controller 244c, and the valve 244d from the upstream. . For the inert gas system, for example, helium (He) gas is used. The inert gas system is added to the gas flowing through the gas supply pipe 242a, and is used as a diluent gas. By controlling the flow controller 244c, valve 244d, the flow can be better tuned in the gas introduction Tube 238, the concentration or flow of gas to gas supply path 235.

The take-up gas supply pipe 241a, the flow rate controller 241b, the valve 241c, the gas supply pipe 242a, the flow rate controller 242b, the valve 242c, and the merging pipe 240b are referred to as a first gas supply system. However, the gas source 240a, the gas introduction pipe 236, and the gas introduction pipe 238 may be contained in the first gas supply system.

The first inert gas supply pipe 243a, the flow rate controller 243c, the valve 243d, the second inert gas supply pipe 244a, the flow rate controller 244c, and the valve 244d are referred to as a first inert gas supply system. However, the inert gas source 243b and the inert gas source 244b may be contained in the first inert gas supply system. Furthermore, the first inert gas supply system may be included in the first gas supply system.

(second gas supply system)

Next, the second gas supply system will be described using FIG. B1 of Fig. 14 is connected to B1 of Fig. 11, and B2 is connected to B2 of Fig. 11. That is, the gas supply pipe 251a is connected to the gas introduction pipe 237, and the gas supply pipe 252a is connected to the gas introduction pipe 239.

The gas supply pipe 251a is provided with a merging pipe 250b, a flow rate controller 251b, and a valve 251c from the upstream. The flow rate of the gas passing through the gas supply pipe 241a is controlled via the flow controller 251b and the valve 251c. A gas source 250a for supplying a second process gas is provided to the flow system above the junction pipe 250b.

Here, the second process gas system contains a second element different from the first element. The second element is, for example, any one of nitrogen (N), carbon (C), and hydrogen (H). In the present embodiment, a nitrogen-containing gas which is a nitriding source of cerium is used. Specifically, as the second processing gas, ammonia (NH ₃ ) gas is used. Further, as the second processing gas, a gas containing a plurality of these elements may be used.

It is preferable to connect the downstream side of the valve 251c to the third inert gas supply pipe 253a for supplying an inert gas. The inert gas supply pipe 253a is provided with an inert gas source 253b, a flow rate controller 253c, and a valve 253d from the upstream. For the inert gas system, for example, helium (He) gas is used. The inert gas system is used as a diluent gas of a gas flowing through the gas supply pipe 251a. By controlling the flow rate controller 253c and the valve 253d, the concentration or flow rate of the processing gas supplied by the gas introduction pipe 237 and the head 234 can be more preferably tuned.

The gas supply pipe 252a is provided with a merging pipe 250b, a flow rate controller 252b, and a valve 252c from the upstream. The flow rate of the gas passing through the gas supply pipe 252a is controlled via the flow controller 252b, the valve 252c. A gas source 250a for supplying a second process gas is provided to the flow system above the junction pipe 250b.

It is ideally attached to the downstream side of the valve 252c, and is connected to the fourth inert gas supply pipe 254a for supplying an inert gas. The inert gas supply pipe 254a is provided with an inert gas source 254b, a flow rate controller 254c, and a valve 254d from the upstream. For the inert gas system, for example, helium (He) gas is used. The inert gas system is used as a diluent gas of a gas flowing through the gas supply pipe 252a. Control flow control The 254c and the valve 254d can better tune the concentration or flow rate of the gas flowing through the gas introduction pipe 239 and the gas supply path 235.

The gas supply pipe 251a, the flow rate controller 251b, the valve 251c, the gas supply pipe 252a, the flow rate controller 252b, the valve 252c, and the merging pipe 250b are referred to as a second gas supply system. However, the gas source 250a, the gas introduction pipe 237, and the gas introduction pipe 239 may be contained in the second gas supply system.

The third inert gas supply pipe 253a, the flow rate controller 253c, the valve 253d, the fourth inert gas supply pipe 254a, the flow rate controller 254c, and the valve 254d are referred to as a second inert gas supply system. However, the inert gas source 253b and the inert gas source 254b may be contained in the second inert gas supply system. Furthermore, the second inert gas supply system may be included in the second gas supply system. In addition, the first gas supply system is integrated, and the second gas supply system is referred to as a gas supply system.

As described above, since each of the first gas supply system and the second gas supply system is provided with a flow rate controller and a valve, the amount of gas can be individually controlled. Further, due to each of the first inert gas supply systems, the second inert gas supply system is provided with a flow controller and a valve, and the concentration of the gas can be individually controlled.

(Control Department)

The substrate processing apparatus 900 includes a controller 260 that controls the operation of each unit of the substrate processing apparatus 900.

An outline of the controller 260 is shown in FIG. Control department The controller 260 is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a memory device 260c, and an input/output port 260d. The RAM 260b, the memory device 260c, and the input/output port 260d are configured to be exchanged with the CPU 260a by the internal bus bar 260e. The controller 260 is configured by, for example, connecting an input/output device 261 configured as a touch panel or the like, or an external memory device 262. Further, the host device 270 is provided with a receiving unit 263 connected by a network. The receiving unit 260 is capable of receiving information from other devices from the host device 270.

The memory device 260c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the memory device 260c, a control program for controlling the operation of the substrate processing device or a program recipe for describing a substrate processing order or condition to be described later is stored. However, the program recipe causes the controller 260 to execute each step of the substrate processing project to be described later, and combines them to obtain a specific result, and functions as a program. Hereinafter, the program formula or control program, etc., is also referred to as a program. However, the case where a recording medium is used in the present specification is a case where only a program recipe unit is included, and only the case where the control program unit is included or both of them are included. Further, the RAM 260b is configured to temporarily hold a memory range (work area) such as a program or data read by the CPU 260a.

The input port 260d is connected to the gate valve 205, the lifting mechanism 218, the heater 213, the pressure regulator 222, and the vacuum pump 223 Wait. Further, it may be connected to the MFCs 241b, 242b, 243c, 244c, 251b, 252b, 253c, 254c, the valves 241c, 242c, 243d, 244d, 251c, 252c, 253d, 254d, and the like.

The CPU 260a is executed by reading the control program from the memory device 260c, and reads the program recipe from the memory device 260c in response to the input of the operation command from the input/output device 261. Further, the CPU 260a controls the opening and closing operation of the gate valve 205, the lifting operation of the lifting mechanism 218, the power supply operation of the heater 213, and the pressure adjustment operation of the pressure regulator 222 along the contents of the programmed formula. The opening and closing control of the vacuum pump 223, the flow rate adjustment operation of the flow controller, and the valve are constructed.

However, the controller 260 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external memory device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, a CD such as a CD or a DVD, an optical disk such as an MO, a USB memory or a memory card, etc.) The semiconductor memory 262 can constitute the controller 260 of the present embodiment when a computer or the like is used to establish a general-purpose computer or the like by using the external memory device 262. However, the means for supplying the program to the computer is not limited to the case of being supplied by the external memory device 262. For example, it may be a communication means such as a network or a dedicated line, and the program may not be supplied by the external memory device 262. However, the memory device 260c or the external memory device 262 is configured as a computer-readable recording medium. Hereinafter, collectively referred to as such, is also simply referred to as a recording medium. However, as used in this specification, it is called The case of recording the media includes a case where only the memory device 260c is included, and only the case where the external memory device 262 is alone or both of them is included.

However, the receiving unit of the present embodiment has described the case where the information of the other device is received from the upper device 270, but the present invention is not limited thereto. For example, as a device from other devices, it is also possible to receive direct information. Further, the information of the other device is input from the input/output device 261, and control may be performed based on the above. In addition, the information of other devices is memorized in the external memory device, and the information of other devices is received from the external memory device.

Next, a method of forming the hard mask film 2006 using the substrate processing apparatus 900 will be described.

After the film thickness measurement process S104, the measured wafer 200 is carried into the substrate processing apparatus 900. However, in the following description, the operations of the respective units constituting the substrate processing apparatus are controlled via the controller 260.

<Substrate loading project>

After the film thickness distribution of the tantalum oxide film 2005 is measured in the film thickness measurement project S104, the wafer 200 is carried into the substrate processing apparatus 900. Specifically, the substrate mounting portion 210 is lowered by the elevating mechanism 218 , and the lift pin 207 protrudes from the through hole 214 on the upper surface side of the substrate mounting portion 210 . Further, after the pressure in the processing chamber 201 is adjusted to a specific pressure, the gate valve 205 is opened, and the wafer 200 is placed on the lift pin 207 from the gate valve 205. After the wafer 200 is placed on the lift pin 207, When the drop 218 raises the substrate mounting portion 210 to a specific position, the wafer 200 is placed on the substrate mounting portion 210 from the lift pins 207.

(decompression. heating project)

Next, in the processing chamber 201, a specific pressure (degree of vacuum) is applied, and the inside of the processing chamber 201 is exhausted by the exhaust pipe 224. At this time, the valve opening degree of the APC valve as the pressure regulator 222 is feedback-controlled according to the pressure value measured by the pressure sensor. Further, according to the temperature value detected by the temperature sensor 216, the inside of the processing chamber 201 is at a specific temperature, and the amount of energization to the heater 213 is feedback-controlled. Specifically, the substrate mounting portion 210 is heated in advance via the heater 213, and the temperature change of the wafer 200 or the substrate mounting portion 210 becomes unnecessary, and then placed at a specific time. In the meantime, the moisture remaining in the processing chamber 201 or the exhaust gas from the member may be removed by vacuum evacuation or removal of the inert gas supply. As a result, the preparation before the film formation process is completed. However, when the inside of the processing chamber 201 is exhausted to a specific pressure, vacuum evacuation may be performed until the vacuum degree can be reached at one time.

After the wafer 200 is placed on the substrate mounting portion 210 and the environment in the processing chamber 201 is stabilized, the flow controller 241b, the flow controller 242b, the flow controller 251b, and the flow controller 252b are simultaneously adjusted, and the valve 241c is adjusted. , valve 242c, valve 251c, opening of valve 252c. At this time, the flow rate controller 243c, the flow rate controller 244c, the flow rate controller 253c, and the flow rate controller 254c may be adjusted, and the opening degree of the valve 243d, the valve 244d, the valve 253d, and the valve 254d may be adjusted.

(gas supply engineering)

In the gas supply process, gas is supplied from the first gas supply system and the second gas supply system to the processing chamber 201.

When the gas is supplied, the first gas supply system is controlled in response to the film thickness measurement data of the insulating film 2013 received from the upper device 270, and the flow controller or valve of the second gas supply system is controlled to be supplied to the center of the wafer 200. The amount (or concentration) of the processing gas and the amount (or concentration) of the processing gas supplied to the outer peripheral surface. More preferably, the central area heater 213a and the outer area heater 213b are controlled to control the temperature distribution in the plane of the wafer 200 in response to the measurement data received from the upper device 270.

The gas system supplied into the processing chamber 201 is decomposed in the processing chamber 201, and a hard mask film 2006 is formed on the tantalum oxide film 2005 after polishing.

After a specific time has elapsed, each valve is closed to stop the supply of gas.

The temperature of the heater 213 at this time is a temperature which does not adversely affect the configuration which has been formed. For example, the wafer 200 is set to a specific temperature in the range of 300 to 450 °C.

The inert gas may be a gas having no adverse effect on the film other than the He gas. For example, a rare gas such as Ar, N ₂ , Ne or Xe may be used.

(substrate removal project)

After the completion of the gas supply process, the substrate mounting portion 210 is lowered by the elevating mechanism 218, and the lift pins 207 protrude from the through holes 214 on the upper surface side of the substrate mounting portion 210. Further, after the inside of the processing chamber 201 is adjusted to a specific pressure, the gate valve 205 is released, and the wafer 200 is transferred from the lift pin 207 to the outside of the gate valve 205.

Next, a method of controlling the film thickness of the hard mask film 2006 will be described using this apparatus. As described above, after the polishing process S103 is completed, the poly-Si film 2005 is on the center surface and the outer peripheral surface of the wafer 200, and the film thickness is different. In the film thickness measurement project S108, the film thickness distribution was measured. The measurement result is stored in the RAM 260b by the upper device 270. The stored data is compared with the recipe in the memory device 260c, and is configured to adjust (tune) the film thickness distribution according to the device control of the formulation.

Next, the case where the data stored in the RAM 260b is the distribution A will be described. The case of the distribution A means that the poly-Si film 2005c is thicker than the poly-Si film 2005d as shown in Fig. 7 and Fig. 8.

In the case of the distribution A, in the present process, the hard mask film 2006b formed on the outer peripheral surface of the wafer 200 is thickened, and the film thickness of the hard mask film 2006a formed on the center surface of the wafer 200 becomes a hard mask film. 2006b is controlled thinly. Specifically, when the gas is supplied, the helium gas supplied to the outer peripheral surface of the wafer 200 contains gas, and is controlled more than the center surface of the wafer 200. In this way, the film thickness of the laminated film of the poly-Si film 2005 in the height of the hard mask film of the semiconductor device, that is, the film thickness of the laminated film of the poly-Si film 2005 can be corrected to the target film thickness shown in FIG. Distribution A'. That is, the film thickness of the laminated film can be corrected to have a film thickness distribution A'.

At this time, in the first gas supply system, while controlling the flow rate controller 241b, the opening degree of the valve 241c is controlled to control the amount of gas contained in the crucible supplied from the head 234 to the processing chamber 201. Further, while controlling the flow rate controller 242b, the opening degree of the control valve 242c is controlled, and the gas containing gas is supplied from the gas supply path 235 to the processing chamber 201. The exposure amount of the gas contained per unit area of the processing surface of the wafer 200 is the amount of exposure of the gas supplied from the gas supply path 235, and is controlled more than the exposure amount of the gas supplied from the head. . The amount of exposure referred to herein refers to the amount of exposure of the major components of the process gas. In the present embodiment, the processing gas is a cerium-containing gas, and the main component is cerium.

Further, in the second gas supply system, while controlling the flow rate controller 251b, the opening degree of the valve 251c is controlled to control the amount of nitrogen-containing gas supplied from the head 234. The amount of nitrogen-containing gas in the gas supply pipe 251a is an amount corresponding to the amount of gas contained in the gas supply pipe 241a. Further, while controlling the flow rate controller 252b, the degree of opening of the valve 252c is controlled, and the nitrogen-containing gas is supplied from the gas supply path 235. The amount of nitrogen-containing gas in the gas supply pipe 252a is an amount corresponding to the amount of gas contained in the gas supply pipe 242a.

At this time, the exposure amount of the gas contained per unit area of the processing surface of the wafer 200 is the exposure amount of the gas supplied from the gas supply path 235, so that the exposure amount of the gas supplied from the shower head 234 is Control over multiple places. The amount of exposure referred to herein refers to the amount of exposure of the major components of the process gas. In the present embodiment, the processing gas is a cerium-containing gas, and the main component is cerium.

The gas containing the gas and the nitrogen-containing gas supplied from the shower head 234 is supplied to the poly-Si film 2005c formed on the center surface of the wafer 200. The supplied gas system is as shown in Fig. 7, and a hard mask film 2006a is formed on the poly-Si film 2005c.

The gas containing the gas and the nitrogen-containing gas supplied from the gas supply path 235 are supplied to the poly-Si film 2005d formed on the outer peripheral surface of the wafer 200. The supplied gas system is as shown in Fig. 7, and a hard mask film 2006b is formed on the poly-Si film 2005d.

As described above, the exposure amount of the gas contained per unit area of the processing surface of the wafer 200 is larger than that of the poly-Si film 2005c due to the poly-Si film 2005d, so that the hard mask film can be formed. The film thickness of 2006b is thicker as the harder photomask film 2006a.

At this time, as shown in FIG. 7, the height H1b from the concave structure surface 2002a of the outer circumferential surface of the wafer 200 to the upper end of the hard mask film 2006b, and the concave structure surface 2002a from the center surface of the wafer 200 to the hard light The height H1a of the upper end of the cover film 2006a is substantially equal, and the thickness of the hard mask film 2006 is controlled. More preferably, the distance from the surface of the wafer 200 to the upper end of the hard mask film 2006b and the distance from the surface of the wafer 200 to the upper end of the hard mask film 2006a are controlled within a specific range. Further, it is more preferable that the distribution of the height of the hard mask film 2006 in the surface of the substrate is within a specific range, and the film thickness distribution of the hard mask film 2006 is controlled.

Further, as another method, the supply amount of the gas contained in the gas supply pipe 241a and the gas supply pipe 242a is the same, and Instead, the concentration of the gas contained in each of the gas supply pipe 241a and the gas supply pipe 242a may be controlled. When the concentration of the gas containing gas is controlled, the first inert gas supply system is controlled to control the concentration of the gas contained in the gas supply pipe 241a through the gas supply pipe 241a. In the case of the distribution A, the concentration of the gas contained in the gas passing through the gas supply pipe 241a is lowered, and the concentration of the gas contained in the gas passing through the gas supply pipe 242a is higher as the concentration of the gas passing through the gas supply pipe 241a.

As a result, the amount of gas supplied from the gas supply path 235 is greater than the amount of gas supplied from the head 234, with respect to the exposure amount of the gas contained per unit area of the processed surface of the wafer 200. , can be controlled more densely. By controlling in this way, the film thickness of the hard mask film 2006b can be more reliably made thicker than the hard mask film 2006a.

More preferably, the supply amount of the gas contained in the gas supply pipe 241a and the gas supply pipe 242a is different, and the concentration may be different. By such a controller, it is possible to supply a gas-containing exposure per unit area with a larger difference. That is, it is possible to have a larger film thickness difference between the hard mask film 2006a and the hard mask film 2006b. Accordingly, even in the polishing process S103, as the difference in height between the poly-Si film 2005c and the poly-Si film 2005d becomes large, the height can be made uniform.

More preferably, the central area heater 213a and the outer area heater 213b may be controlled in parallel with the control gas as described above. The film thickness formed is proportional to the temperature, and the temperature of the outer zone heater 213b is higher than that of the central zone heater 213a. For example, use A gas having a large contribution to the film formation efficiency such as the temperature condition of dioxane is effective for the case of forming the hard mask film 2006.

As described above, when the gas supply amount (concentration) and the temperature are controlled in parallel, the film thickness control can be performed more densely.

Next, the case where the data stored in the RAM 260b is the distribution B will be described. The case of the distribution B means that the poly-Si film 2005d is thicker than the poly-Si film 2005c as shown in Fig. 9 and Fig. 10.

In the case of the distribution B, in the present process, the hard mask film 2006a formed on the center surface of the wafer 200 is thickened, and the thickness of the hard mask film 2006b formed on the outer peripheral surface of the wafer 200 is made to be hard light. The cover film 2006a is controlled to be small. Specifically, when the gas is supplied, the cerium-containing gas supplied to the center surface of the wafer 200 is controlled to be larger than the outer peripheral surface of the wafer 200. As a result, the height of the insulating film of the semiconductor device, i.e., the height of the hard mask film 2006 over the insulating film 2013, can be corrected to the target film thickness distribution B' shown in Fig. 10. That is, the film thickness of the laminated film can be corrected to have a film thickness distribution B'.

At this time, in the first gas supply system, while controlling the flow rate controller 241b, the opening degree of the valve 241c is controlled to control the amount of gas contained in the crucible supplied from the head 234 to the processing chamber 201. Further, while controlling the flow rate controller 242b, the opening degree of the control valve 242c is controlled, and the gas containing gas is supplied from the gas supply path 235 to the processing chamber 201. The exposure amount of the gas contained in the area per unit area of the processed surface of the wafer 200 is the exposure amount of the gas supplied from the head 234, so that the exposure amount of the gas supplied from the gas supply path 235 is increased. control.

Further, in the second gas supply system, while controlling the flow rate controller 251b, the opening degree of the valve 251c is controlled to control the amount of nitrogen-containing gas supplied from the head 234. The amount of nitrogen-containing gas in the gas supply pipe 251a is an amount corresponding to the amount of gas contained in the gas supply pipe 241a. Further, while controlling the flow rate controller 252b, the degree of opening of the valve 252c is controlled, and the nitrogen-containing gas is supplied from the gas supply path 235. The amount of nitrogen-containing gas in the gas supply pipe 252a is an amount corresponding to the amount of gas contained in the gas supply pipe 242a.

At this time, the exposure amount of the gas contained in the area per unit area of the processed surface of the wafer 200 is the exposure amount of the gas supplied from the head 234, and the exposure amount of the gas supplied from the gas supply path 235 is Control over multiple places.

The gas containing the gas and the nitrogen-containing gas supplied from the shower head 234 is supplied to the poly-Si film 2005c formed on the center surface of the wafer 200. The supplied gas system is as shown in Fig. 9, and a hard mask film 2006a is formed on the poly-Si film 2005c.

The gas containing the gas and the nitrogen-containing gas supplied from the gas supply path 235 are supplied to the poly-Si film 2005d formed on the outer peripheral surface of the wafer 200. The supplied gas system is as shown in Fig. 9, and a hard mask film 2006b is formed on the poly-Si film 2005d.

As described above, the exposure amount of the gas contained per unit area of the processing surface of the wafer 200 is higher than that of the poly-Si film 2005d due to the poly-Si film 2005c, so that the hard mask film can be formed. The film thickness of 2006a is thicker as the harder photomask film 2006b.

At this time, as shown in FIG. 9, the height H1b from the concave structure surface 2002a of the outer circumferential surface of the wafer 200 to the upper end of the hard mask film 2006b, and the concave structure surface 2002a from the center surface of the wafer 200 to the hard light The height H1a of the upper end of the cover film 2006a is substantially equal, and the thickness of the hard mask film 2006 is controlled. More preferably, the distance from the surface of the wafer 200 to the upper end of the hard mask film 2006b and the distance from the surface of the wafer 200 to the upper end of the hard mask film 2006a are controlled within a specific range. Further, it is more preferable that the distribution of the height of the hard mask film 2006 in the surface of the substrate is within a specific range, and the film thickness distribution of the hard mask film 2006 is controlled.

Further, as another method, the supply amount of the gas contained in the gas supply pipe 241a and the gas supply pipe 242a is the same, and the concentration of the gas contained in each of the gas supply pipe 241a and the gas supply pipe 242a may be controlled instead. When the concentration of the gas containing gas is controlled, the first inert gas supply system is controlled to control the concentration of the gas contained in the gas supply pipe 241a through the gas supply pipe 241a. In the case of the distribution B, the concentration of the gas contained in the gas supply pipe 242a is reduced, and the concentration of the gas contained in the gas passing through the gas supply pipe 241a is higher as the concentration of the gas passing through the gas supply pipe 242a.

As a result, the amount of gas supplied from the head 234 is more accurately determined by the amount of gas supplied from the head 234 in the amount of gas per unit area of the processing surface of the wafer 200, and the amount of gas supplied from the gas supply path 235 is Many places can be controlled. By controlling in this way, the film thickness of the hard mask film 2006a can be more reliably determined as the hard mask film 2006b. Thick.

More preferably, the supply amount of the gas contained in the gas supply pipe 251a and the gas supply pipe 252a is different, and the concentration may be different. By such a controller, it is possible to supply a gas-containing exposure per unit area with a larger difference. That is, it is possible to have a larger film thickness difference between the hard mask film 2006a and the hard mask film 2006b. As a result, even if the difference between the height of the poly-Si film 2005c and the height of the poly-Si film 2005d in the polishing process S103 becomes large, the height can be made uniform in the plane of the wafer 200.

More preferably, the central area heater 213a and the outer area heater 213b may be controlled in parallel with the control gas as described above. The film thickness formed is proportional to the temperature, and the distribution B is such that the temperature of the central zone heater 213a is higher than that of the outer zone heater 213b. For example, a gas which greatly contributes to the film formation efficiency using a temperature condition such as dioxane is effective for forming the hard mask film 2006.

As described above, when the gas supply amount (concentration) and the temperature are controlled in parallel, the film thickness control can be performed more densely.

As described above, the thickness of the hard mask film 2006 can be controlled at the center of each wafer 200 and the outer periphery thereof by the amount of gas contained per unit area of the processing surface of the tuned wafer 200.

At this time, the thickness of the hard mask film 2006b is superimposed on the thickness of the poly-Si film 2005d so as to be equal to the thickness of the super hard mask film 2006a on the poly-Si film 2005c, and the thickness of the hard mask film 2006 is controlled.

(Thickness measurement engineering S106)

The film thickness measurement process S106 may be performed in the hard mask film forming process S105. In the film thickness measurement project S109, the height of the laminated film of the tantalum oxide film 2005 and the hard mask film 2006 was measured. Specifically, it is confirmed whether or not the heights of the overlapping layers are uniform, that is, whether the film thickness of the laminated film is corrected to the film thickness distribution of the target. Here, "the height is the same" means that it is not limited to the one with the highest height, but may be different for the height. For example, the difference in height may be in the range of no influence such as a subsequent patterning process. Similarly, the "thickness is equal" is not limited to the case where the thickness is equal, and the thickness may be different. For example, the difference in thickness may be in the range of no influence such as a subsequent patterning process.

After the hard mask film forming process S105, the wafer 200 is carried into the measuring device. The measurement apparatus measures the film thickness (height) distribution of the hard mask film 2006 at least at least a part of the center surface and the outer peripheral surface of the wafer 200 which is easily affected by the polishing apparatus 400. The measured data is transmitted to the upper device 270. After the measurement, the wafer 200 is carried out.

The height distribution in the plane of the wafer 200 is within a specific range, specifically, in the range of no effect such as the subsequent patterning process S107, and the process proceeds to the patterning process S107. However, in the case where the film thickness distribution is known in advance to be a specific distribution, the film thickness measurement project S106 may be omitted.

(patterning engineering S107)

Next, the patterning process S107 will be described using FIGS. 16 to 17 . Fig. 16 is an explanatory view for explaining the wafer 200 in the exposure process. FIG. 17 is an explanatory view illustrating the wafer 200 after the etching process.

The specific content is explained below.

After the hard mask film 2006 is formed, the photoresist film 2008 is coated on the hard mask film 2006. Thereafter, light is emitted from the lamp 501 to perform exposure engineering. In the exposure process, the light 503 is irradiated onto the photoresist film 2008 by the mask 502 to deteriorate a portion of the photoresist film 2008. Here, the deteriorated photoresist film is referred to as a photosensitive portion 2008a, and the undegraded photoresist film is referred to as an unexposed portion 2008b.

As described above, the height from the concave surface 2002a to the surface of the hard mask film 2006 is within a specific range in the plane of the substrate. Accordingly, the height from the concave surface 2002a to the surface of the hard mask film 2008 can be made uniform. In the exposure process, the light reaches the distance to the photoresist film, that is, the movement of the light 503 becomes equal in the plane of the wafer 200. Accordingly, the in-plane distribution of the depth of focus can be made equal.

The depth of focus can be made equal. As shown in Fig. 16, the width of the photosensitive portion 2008a can be made constant in the substrate surface. Accordingly, the unevenness of the pattern width can be eliminated.

Next, the state of the wafer 200 after the etching process will be described using FIG. Since the width of the photosensitive portion 2008a is constant as described above, the etching conditions in the plane of the wafer 200 can be made constant. Accordingly, the etching gas can be uniformly supplied to the center surface or the outer peripheral surface of the wafer 200, and the width of the etched poly-Si film (hereinafter also referred to as a column) can be made wide. The degree β is determined to be constant. Since the width β is constant in the plane of the wafer 200, the characteristics of the gate electrode can be made constant in the surface of the substrate, and the yield can be improved.

Next, a first comparative example will be described using FIG. 18 and FIG. In the first comparative example, the correction of the film thickness distribution was not performed in the hard mask film forming process S105, that is, the film thickness distribution was not adjusted (tuned). Accordingly, the height of the center surface of the wafer 200 and the outer peripheral surface thereof are different.

First, the first comparative example will be described using FIG.

Figure 18 is a view compared with Figure 16. In the case of FIG. 18, the hard mask film 2006 which is not corrected for the film thickness distribution has a film thickness slightly the same on the center side and the outer peripheral side of the wafer 200. As a result, the height of the laminated film of the poly-Si film 2005 and the hard mask film 2006 is different between the center surface and the outer peripheral surface of the wafer 200, and the distance of the light 503 is on the center surface of the wafer 200. The outer peripheral surface of the wafer 200 is different. Accordingly, the focal length is different between the center surface and the outer peripheral surface, and as a result, the width of the photosensitive portion 2008a is different in the substrate surface. When processing is performed in such a photoresist film 2008, as shown in Fig. 19, the widths of the pillars after the etching process are different. The distance γ between the poly-Si films of the pillars is different between the center surface and the outer peripheral surface of the wafer 200. That is, the width β of the poly-Si of the pillar is different between the central surface and the outer peripheral surface of the wafer 200.

The characteristics of the electrode are easily affected by the width β, and when there is unevenness in the width β, the characteristics of the formed electrode are also uneven. Accordingly, the unevenness of the width β is accompanied by a decrease in the yield.

In this regard, the present embodiment is formed by hard etching a mask film shape. In the case of the process S105, the width of the column can be made constant in the plane of the wafer 200. Accordingly, compared with the comparative example, a semiconductor device having uniform characteristics can be formed, which can significantly contribute to an improvement in yield.

Next, a second comparative example will be described using FIG.

In the second comparative example, the film thickness distribution is determined to be A, and the film thickness distribution is corrected by a method different from that of the present embodiment. Specifically, after the film thickness measurement process S104, the second poly-Si film 2005' is formed.

The second poly-Si film 2005' is formed as follows.

The wafer 200 on which the first poly-Si layer is formed is carried into the film thickness measuring device through the polishing apparatus. In the film thickness measuring device, the film thickness distribution is measured, and after measurement, it is carried out. The unloaded wafer is carried into the second ruthenium-containing film forming apparatus, and the second poly-Si film 2005' is formed on the second poly-Si film 2005 in response to the measured film thickness distribution.

At this time, unevenness in the film thickness distribution was observed, and the second poly-Si film 2005' was formed in accordance with the measured film thickness distribution data. The height of the poly-Si film was made uniform as such.

Thereafter, the wafer 200 is carried out from the second ruthenium-containing film forming apparatus and carried into the hard mask film forming apparatus. In the hard mask film forming apparatus, a hard mask film 2006' is formed on the second poly-Si film 2005'.

By such a method, the height of the hard mask film 2006' can be made uniform in the plane of the wafer 200.

However, as a result of the intensive research by the inventors of the present application, in the method of the second comparative example, the problem as described below was known.

In the second comparative example, the poly-Si layer 2005 and the second poly-Si layer 2005' are each formed by another process. However, for each project period, the grinding process is carried out (S103). That is, even if the poly-Si layer 2005 and the second poly-Si layer 2005' are formed by the same compound, they are not continuously formed, and there is a damage by polishing. Accordingly, the film composition in the vicinity of the interface between the poly-Si layer 2005 and the second poly-Si layer 2005' is deteriorated, and there is a possibility that an interface layer having a different composition is formed with each layer.

When the interface layer is formed, the etching rate is different in the poly-Si layer 2005, and the poly-Si layer 2005', and the interface layer. That is, since the poly-Si layer 2005 and the second poly-Si layer 2005' are formed by the same compound, they should each have the same etching rate, but when there is an interfacial layer intervening between them These are not uniform etch rates. Accordingly, in the case of considering the entire poly-Si layer, the calculation of the etching rate in the patterning process becomes difficult. That is, in the patterning process, there is a risk of over-etching or insufficient etching.

Further, when an interface layer exists between the poly-Si layer 2005 and the second poly-Si layer 2005', the degree of bonding becomes weak.

On the other hand, in the above-described embodiment, the variation in the film thickness distribution of the poly-Si layer 2005 is corrected, and the poly-Si layer 2005' is not formed as in the second comparative example, but is used as a hard mask film. By performing the function of the SiN layer 2006, the following risks can be reduced. That is, in the present embodiment, since it is not in the layer of the poly-Si layer 2005, The formation of the interface layer as in the second comparative example was easy to calculate the etching rate of the poly-Si layer 2005. Therefore, in the patterning process, it is possible to suppress the risk of over-etching or insufficient etching. Further, in the first specific example of the present embodiment, since it is not necessary to form the second poly-Si layer 2005', it is possible to reduce the number of items compared with the case of the third comparative example, and as a result, high manufacturing can be realized. Production.

However, in the present embodiment, the description has been made from the gate insulating film forming process S101 to the patterning process S107 by an individual device. However, the present invention is not limited thereto, and as shown in FIG. 21, it may be implemented as one system. . Here, as system 600, there is a control system upper device 601. The substrate processing apparatus or the substrate processing system for processing the substrate includes an insulating film forming apparatus 602 that performs the gate insulating film forming process S101, a substrate processing apparatus 603 that performs the germanium-containing layer forming process S102, and a polishing apparatus 604 that performs the polishing process S103. (corresponding to the polishing apparatus 400 of the present embodiment), the film thickness measuring device 605 of the film thickness measuring project S104 is implemented, and the substrate processing device 606 of the hard mask film forming process S105 is implemented (corresponding to the substrate processing device 900 of the present embodiment) The film thickness measuring device 607 of the film thickness measuring project S106 is implemented, and the patterning system 608 of the patterning process S107 is implemented. Furthermore, there is a network 611 for exchanging information between devices or systems.

The system 600 has a device that can be suitably selected, such as a device that is cumbersome and integrated into one device. Furthermore, management in the system 600 is not performed in other systems. In this case, as information is presented to other systems by the higher-level network 612 It can be communicated.

The host device 601 has a controller 6001 that controls information transmission of each substrate processing device or substrate processing system.

The controller 6001 of the control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 6001a, a RAM (Random Access Memory) 6001b, a memory device 6001c, and an input/output port 6001d. The RAM 6001b, the memory device 6001c, and the input/output port 6001d are configured to be exchanged with the CPU 6001a by means of an internal bus bar. For example, the controller 601 can be connected to an input/output device 6002 configured as a touch panel or the like, or an external memory device 6003. Moreover, a receiving and transmitting unit 6004 for transmitting and receiving information by another device or system and a network is provided.

The memory device 6001c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the memory device 6001c, a program for reading an operation command to the substrate processing device can be read. Further, the RAM 6001b is configured to temporarily hold a memory range (work area) such as a program or data read by the CPU 6001a.

The CPU 6001a is executed by reading the control program from the memory device 6001c, and is configured to read the program recipe from the memory device 6001c in response to an input of an operation command from the input/output device 6002. Further, the CPU 6001a is configured to control the information transmission operation of each device along the contents of the program to be read.

However, the controller 6001 is not limited to being a dedicated computer. However, it may be constituted as a general-purpose computer. For example, an external memory device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, a CD such as a CD or a DVD, an optical disk such as an MO, a USB memory or a memory card, etc.) The semiconductor memory 6003 can be configured as the controller 6001 according to the present embodiment when the computer or the like is used to establish a general-purpose computer or the like by using the external memory device 6003. However, the means for supplying the program to the computer is not limited to the case of being supplied by the external memory device 6003. For example, it may be a communication means such as a network or a dedicated line, and the program may not be supplied by the external memory device 6003. However, the memory device 6001c or the external memory device 6003 is configured as a computer-readable memory medium. Hereinafter, collectively referred to as such, is also simply referred to as a recording medium. However, the case where the recording medium is used in the present specification is a case where only the memory device 6001c is included, and only the case where the external memory device 6003 is alone or both of them is included.

Further, in the above embodiment, the center of the wafer 200 is divided into the outer circumference, but the outer circumference is described. However, the thickness of the film containing the ruthenium film is also controlled in a finer range in the radial direction. can. For example, it may be divided into three ranges including the center of the substrate, the outer circumference, and the center and the outer circumference.

Further, although the tantalum nitride film is exemplified as the hard mask film here, it is not limited thereto, and may be, for example, a tantalum carbide (SiC) film or a SiCN film.

However, in the case of performing a sputtering process or a film formation process, a process of combining anisotropy or an isotropic process may be employed. have More precise corrections can be made at the time of anisotropic processing or isotropic processing.

Further, in the above description, a 300 mm wafer has been described, but the configuration is not limited thereto. For example, a large substrate such as a 450 mm wafer is more effective. The case of a large substrate is more conspicuous due to the influence of the polishing process S103. That is, the difference in film thickness between the poly-Si film 2005a and the poly-Si film 2005b becomes larger. By correcting the film thickness in the hard mask film forming process, it is possible to suppress unevenness in the in-plane characteristics even in a large substrate.

<Ideal form of the invention>

In the following, an ideal form of the present embodiment is attached.

(Note 1)

According to an aspect of the present invention, there is provided a receiving portion for receiving a film thickness distribution data of a ruthenium-containing film formed on a substrate, and a substrate mounting portion on which the substrate is placed, and a hard mask film is formed on the ruthenium film with a film thickness distribution different from the film thickness distribution of the film thickness distribution data, and the height distribution of the hard mask film supplied into the substrate surface is a gas within a specific range. A substrate processing apparatus for a gas supply unit.

(Note 2)

The substrate processing apparatus according to supplementary note 1, wherein the ideal system In the gas supply unit, the film thickness distribution of the ruthenium-containing film of the received film thickness distribution data is larger than the center surface of the substrate, and the film thickness of the outer peripheral surface is large, and the substrate on the outer peripheral surface is large. The exposure amount of the main component of the processing gas per unit area is such that the gas is supplied less than the center surface.

(Note 3)

In the substrate processing apparatus according to the second aspect of the invention, the gas supply unit is configured to exhibit a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a film on the outer peripheral surface of the substrate. When the thickness is large, the temperature of the center surface of the substrate is such that the gas is supplied at a temperature higher than the temperature of the outer peripheral surface.

(Note 4)

The substrate processing apparatus according to supplementary note 3, wherein the ruthenium-containing film is preferably made of polysilicon.

(Note 5)

The substrate processing apparatus according to supplementary note 1, wherein the gas supply unit is preferably The film thickness distribution of the ruthenium-containing film of the film thickness distribution data of the above-mentioned reception shows that the film thickness of the outer peripheral surface is larger than the center surface of the substrate, and the amount of the processing gas supplied to the outer peripheral surface is The gas is supplied to the center surface in a smaller amount than the center surface.

(Note 6)

In the substrate processing apparatus according to the first aspect of the invention, the substrate mounting portion is preferably configured such that the film thickness distribution of the ruthenium-containing film is larger than the center surface of the substrate, and the outer peripheral surface of the substrate. When the film thickness is large, the temperature of the center surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the outer peripheral surface.

(Note 7)

In the substrate processing apparatus according to the first aspect of the invention, the gas supply unit is configured to exhibit a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a film on the outer peripheral surface of the substrate. When the thickness is large, the concentration of the main component of the processing gas supplied to the outer peripheral surface is such that the gas is supplied less than the center surface.

(Note 8)

In the substrate processing apparatus according to the seventh aspect of the invention, the gas supply unit is preferably added to the supply amount of the inert gas supplied to the processing gas on the outer peripheral surface when the concentration of the processing gas is controlled. The supply amount of the inert gas supplied to the processing gas on the center surface is supplied to the gas in a large amount.

(Note 9)

In the substrate processing apparatus according to the first aspect of the invention, the substrate mounting portion preferably displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is large, the temperature of the center surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the outer peripheral surface.

(Note 10)

In the substrate processing apparatus according to the first aspect of the invention, the gas supply unit is configured to exhibit a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a film on the outer peripheral surface of the substrate. When the thickness is small, the exposure amount of the main component of the processing gas per unit area of the substrate on the outer peripheral surface is such that the gas is supplied to the gas larger than the center surface. body.

(Note 11)

In the substrate processing apparatus according to the ninth aspect, the substrate mounting portion is configured to display a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate is formed on the outer peripheral surface of the substrate. When the film thickness is small, the temperature distribution of the substrate is adjusted so that the temperature of the outer peripheral surface of the substrate is higher than the temperature of the center surface.

(Note 12)

The substrate processing apparatus according to supplementary note 11, wherein the second ruthenium-containing film is preferably made of polycrystalline germanium.

(Note 13)

In the substrate processing apparatus according to the first aspect of the invention, the gas supply unit is configured to exhibit a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a film on the outer peripheral surface of the substrate. When the thickness is small, the amount of the processing gas supplied to the outer peripheral surface is such that the gas is supplied more than the central surface.

(Note 14)

In the substrate processing apparatus according to the ninth aspect, the substrate mounting portion is configured to display a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate is formed on the outer peripheral surface of the substrate. When the film thickness is small, the temperature of the outer peripheral surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the center surface.

(Note 15)

In the substrate processing apparatus according to the first aspect of the invention, the gas supply unit is configured to exhibit a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a film on the outer peripheral surface of the substrate. When the thickness is small, the concentration of the main component of the processing gas supplied to the outer peripheral surface is such that the gas is supplied to the center surface.

(Note 16)

In the substrate processing apparatus according to the fifth aspect of the invention, the gas supply unit is preferably added to the supply amount of the inert gas supplied to the processing gas in the center surface when the concentration of the processing gas is controlled. The supply amount of the inert gas supplied to the processing gas on the outer peripheral surface is supplied to the gas in a large amount.

(Note 17)

In the substrate processing apparatus according to the first aspect of the invention, the substrate mounting portion preferably displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is small, the temperature of the outer peripheral surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the center surface.

(Note 18)

Further, according to another aspect, the present invention provides a first device for forming a ruthenium-containing film formed on a substrate, a second device for polishing the ruthenium-containing film, and a film thickness distribution of the ruthenium-containing film after polishing. a third device, and a film thickness distribution different from the film thickness distribution on the ruthenium-containing film after polishing, forming a hard mask film, and the height distribution of the hard mask film in the substrate surface is specific A substrate processing system of a fourth device that is processed in range.

(Note 19)

The substrate processing system described in Attachment 18, wherein it is preferable to form a specific pattern for the hard mask film.

(Note 20)

The substrate processing system described in Attachment 19, wherein the ideal system In the above-described patterning system, there is provided an exposure apparatus that performs exposure processing on the substrate, and when the fourth apparatus is processed by the exposure apparatus, the in-plane distribution of the depth of the substrate is within a specific range, and the control is performed. The film thickness distribution in the surface of the substrate of the hard mask film.

(Note 21)

Further, according to another aspect, there is provided a method of forming a ruthenium-containing film forming a ruthenium-containing film on a substrate, polishing a substrate, and measuring a film thickness distribution in the surface of the ruthenium-containing substrate. And a method of manufacturing a semiconductor device in which a hard mask film forming process of a hard mask film is formed on the ruthenium-containing film after polishing and a film thickness distribution different from the film thickness distribution.

(Note 22)

Further, according to another aspect, there is provided a project for receiving a film thickness distribution data of a substrate including a ruthenium film in a polished state, a process of placing the substrate on the substrate mounting portion, and a film thickness distribution data. Based on the above-described ruthenium-containing film, a method of manufacturing a semiconductor device for forming a hard mask film of a hard mask film is formed by a film thickness distribution different from the film thickness distribution of the film thickness distribution data.

(Note 23)

Another example is according to other forms, Providing a step of causing a computer to perform a process of receiving a film thickness distribution data of a substrate containing a germanium film in a polished state, and a step of placing the substrate on the substrate mounting portion, and based on the film thickness distribution data The film thickness distribution on the ruthenium-containing film which is different from the film thickness distribution of the film thickness distribution data is a step of forming a hard mask film.

(Note 24)

Further, according to another aspect, the method of storing a film thickness distribution data for causing a computer to receive a substrate containing a ruthenium film in a polished state, and a step of placing the substrate on the substrate mounting portion, and the film Based on the thick distribution data, a film thickness distribution different from the film thickness distribution of the film thickness distribution data on the ruthenium-containing film is a recording medium for forming a hard mask film.

(Note 25)

Further, according to another aspect, the present invention provides a receiving portion for receiving a film thickness distribution data of a ruthenium-containing film formed as a gate electrode layer formed on a substrate, and a substrate mounting portion on which the substrate is placed And forming a hard mask film on the ruthenium-containing film with a film thickness distribution different from the film thickness distribution of the film thickness distribution data, and the height distribution of the hard mask film supplied in the substrate surface becomes specific A substrate processing apparatus for a gas supply unit of a gas in a range.

(Note 26)

Further, according to another aspect, there is provided a receiving portion for receiving a film thickness distribution data of a ruthenium film formed as a dummy gate electrode layer formed on a substrate, and a substrate on which the substrate is placed And forming a hard mask film on the ruthenium-containing film with a film thickness distribution different from the film thickness distribution of the film thickness distribution data, and the height distribution of the hard mask film supplied into the substrate surface becomes A substrate processing apparatus for a gas supply unit of a gas within a specific range.

Claims (19)

A substrate processing apparatus characterized by comprising: a receiving portion for receiving a film thickness distribution data of a ruthenium-containing film formed on a substrate; and a substrate mounting portion on which the substrate is placed, and the ruthenium-containing film a hard mask film is formed by a film thickness distribution different from the film thickness distribution of the film thickness distribution data, and the height distribution of the hard mask film supplied into the substrate surface is a gas supply portion of a gas within a specific range. . The substrate processing apparatus according to the first aspect of the invention, wherein the gas supply unit displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is large, the amount of exposure of the main component of the processing gas per unit area of the substrate on the outer peripheral surface is such that the gas is supplied less than the center surface. The substrate processing apparatus according to the second aspect of the invention, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and displays a center surface of the substrate When the film thickness of the surface is large, the temperature of the center surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the outer peripheral surface. The substrate processing apparatus according to claim 1, wherein the gas supply unit is The film thickness distribution of the ruthenium-containing film of the film thickness distribution data of the above-mentioned reception shows that the film thickness of the outer peripheral surface is larger than the center surface of the substrate, and the amount of the processing gas supplied to the outer peripheral surface is The gas is supplied to the center surface in a smaller amount than the center surface. The substrate processing apparatus according to the fourth aspect of the invention, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness of the surface is large, the temperature of the center surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the outer peripheral surface. The substrate processing apparatus according to the first aspect of the invention, wherein the gas supply unit displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is large, the concentration of the main component of the processing gas supplied to the outer peripheral surface is such that the gas is supplied smaller than the center surface. The substrate processing apparatus according to claim 6, wherein the gas supply unit is configured to supply a supply amount of the inert gas to the processing gas supplied to the outer peripheral surface when the concentration of the processing gas is controlled. The supply amount of the inert gas added to the processing gas supplied to the center surface is supplied in a large amount. The substrate processing apparatus according to the first aspect of the invention, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and displays a peripheral surface of the substrate When the film thickness of the surface is large, the temperature of the center surface of the substrate is such that the temperature distribution of the substrate is adjusted to be higher than the temperature of the outer peripheral surface. The substrate processing apparatus according to the first aspect of the invention, wherein the gas supply unit displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is small, the exposure amount of the main component of the processing gas per unit area of the substrate on the outer peripheral surface is such that the gas is supplied to the center surface. The substrate processing apparatus according to claim 9, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness of the surface is small, the temperature of the outer peripheral surface of the substrate is adjusted so as to be higher than the temperature of the center surface. The substrate processing apparatus according to claim 1, wherein the gas supply unit is In the film thickness distribution data of the received film, the film thickness distribution of the ruthenium-containing film is smaller than the center surface of the substrate, and the film thickness of the outer peripheral surface is small, and the amount of the processing gas supplied to the outer peripheral surface is The gas is supplied to the center surface in a smaller amount than the center surface. The substrate processing apparatus according to claim 11, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and displays a peripheral surface of the substrate When the film thickness of the surface is small, the temperature of the outer peripheral surface of the substrate is set to be higher than the temperature of the center surface to adjust the temperature distribution of the substrate. The substrate processing apparatus according to the first aspect of the invention, wherein the gas supply unit displays a film thickness distribution of the ruthenium-containing film on the film thickness distribution data of the received image, and a peripheral surface of the substrate When the film thickness is small, the concentration of the main component of the processing gas supplied to the outer peripheral surface is such that the gas is supplied larger than the center surface. The substrate processing apparatus according to claim 13, wherein the gas supply unit is added to the supply amount of the inert gas supplied to the processing gas in the center surface when the concentration of the processing gas is controlled. The supply amount of the inert gas added to the processing gas supplied to the outer peripheral surface is The above gas is supplied in a large amount. The substrate processing apparatus according to the first aspect of the invention, wherein the substrate mounting portion displays a film thickness distribution of the ruthenium-containing film on the film thickness data of the received image, and a peripheral surface of the substrate When the film thickness is small, the temperature of the outer peripheral surface of the substrate is set to be higher than the temperature of the center surface to adjust the temperature distribution of the substrate. A substrate processing system characterized by comprising: a first device for forming a ruthenium-containing film formed on a substrate; and a second device for polishing the ruthenium-containing film, and measuring a film thickness distribution of the ruthenium-containing film after polishing a third device, and a film thickness distribution different from the film thickness distribution on the ruthenium-containing film after polishing, forming a hard mask film, and the height distribution of the hard mask film in the substrate surface is specific A fourth device that performs processing in scope. A method of manufacturing a semiconductor device, comprising: forming a ruthenium-containing film on a substrate, polishing a substrate, and measuring a film thickness distribution in a surface of the ruthenium-containing substrate; The measurement process, and the film thickness distribution different from the film thickness distribution on the above-mentioned ruthenium-containing film after polishing, forms a hard mask film forming process of the hard mask film. A method of manufacturing a semiconductor device, comprising: a process of receiving a film thickness distribution data of a substrate containing a germanium film in a polished state; and a process of placing the substrate on the substrate mounting portion, and the film thickness Based on the distribution data, a hard mask film forming process of the hard mask film is formed on the ruthenium-containing film by a film thickness distribution different from the film thickness distribution of the film thickness distribution data. A program for causing a computer to perform a step of receiving a film thickness distribution data of a substrate containing a germanium film in a polished state, and a step of placing the substrate on the substrate mounting portion, and the film thickness distribution data is According to the method of forming a hard mask film on the ruthenium-containing film, a film thickness distribution different from the film thickness distribution of the film thickness distribution data is used.