TW201705560A - High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element - Google Patents

High-frequency ultrasound piezoelectric element, manufacturing method thereof and the high-frequency ultrasound probe comprising the high-frequency ultrasound piezoelectric element Download PDF

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TW201705560A
TW201705560A TW105119414A TW105119414A TW201705560A TW 201705560 A TW201705560 A TW 201705560A TW 105119414 A TW105119414 A TW 105119414A TW 105119414 A TW105119414 A TW 105119414A TW 201705560 A TW201705560 A TW 201705560A
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piezoelectric
lower electrode
piezoelectric element
piezoelectric film
frequency ultrasonic
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TWI693731B (en
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小林牧子
田邊將之
椎名毅
隅田劍生
河口範夫
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國立大學法人熊本大學
國立大學法人京都大學
產學連攜研究所股份有限公司
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00Piezoelectric transducers; Electrostrictive transducers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/093Forming inorganic materials
    • H10N30/097Forming inorganic materials by sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/13Tomography
    • A61B8/14Echo-tomography

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Abstract

The present invention relates to a manufacturing method of the high-frequency ultrasound piezoelectric element, comprising: preparing bottom electrode by coating the complex of sol-gel solution and piezoelectric powder to the bottom electrode with spray method, sintering the coated complex to form a piezoelectric film, and forming an upper electrode on the piezoelectric film. The present invention produces the high-frequency ultrasound piezoelectric element by such an easy method and also get clearer ultrasound image than the prior art.

Description

高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高 頻超音波探頭 High-frequency ultrasonic piezoelectric element, method of manufacturing the same, and high-frequency ultrasonic element including the same Frequency ultrasonic probe

本發明係關於高頻超音波壓電元件、其製造方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,尤其係包含採用噴塗法(spray method)形成的壓電膜的高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭(high-frequency ultrasound probe)。 The present invention relates to a high-frequency ultrasonic piezoelectric element, a method of manufacturing the same, and a high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element, and more particularly to a high-frequency ultrasonic piezoelectric element including a piezoelectric film formed by a spray method, A manufacturing method and a high-frequency ultrasound probe including the high-frequency ultrasonic piezoelectric element.

以往,使用超音波探頭等對有機體內部等照射超音波,得到來自該有機體內部的反射波,對所得的反射波實施信號處理使其可視化,從而對有機體的性狀進行診斷。超音波的收發採用壓電元件,作為壓電元件的材料,通常使用鋯鈦酸鉛(Pb(Zr,Ti)O3:PZT)等具有鈣鈦礦結晶結構的氧化系壓電材料。壓電元件通常採用以下方式製造:將由PZT等製成的粉末成形為立方體等預定形狀,對該成形體進行燒結得到陶瓷燒結體,然後將該燒結體作為壓電膜通過切削、研磨等加工成所需形狀,在該壓電膜上安裝電極,從而製成壓電元件(例如參照專利文獻1等)。 Conventionally, an ultrasonic wave or the like is used to irradiate an ultrasonic wave inside an organism, and a reflected wave from the inside of the organism is obtained, and the obtained reflected wave is subjected to signal processing to visualize it, thereby diagnosing the properties of the organism. A piezoelectric element is used for transmission and reception of ultrasonic waves, and an oxidized piezoelectric material having a perovskite crystal structure such as lead zirconate titanate (Pb(Zr, Ti)O 3 :PZT) is usually used as a material of the piezoelectric element. The piezoelectric element is usually produced by molding a powder made of PZT or the like into a predetermined shape such as a cube, sintering the formed body to obtain a ceramic sintered body, and then processing the sintered body as a piezoelectric film by cutting, grinding, or the like. A piezoelectric element is fabricated by mounting an electrode on the piezoelectric film in a desired shape (see, for example, Patent Document 1).

近年來,要求能夠獲得更高清晰度的超音波圖像,為了得到 高清晰度的超音波圖像,需要能夠以更高頻率收發超音波的壓電元件。在使用同一材料作為壓電元件的材料的情況下,隨著壓電膜厚度的降低,以高頻率收發超音波成為可能。具體而言,壓電元件的驅動頻率與壓電元件的厚度成反比關係,具有100μm的壓電膜的壓電元件以例如20MHz驅動時,若使與之相同的材料製成的壓電元件的壓電膜厚度為100μm的五分之一即20μm,則通常其驅動頻率為20MHz的5倍即100MHz。如果使用以這樣100MHz的高頻驅動的壓電元件,則所得的超音波圖像的照射方向空間分辨率是驅動頻率為20MHz的情況的5倍。因此,為了得到能夠獲得更高清晰度的超音波圖像的壓電元件,需要形成膜厚更小的壓電膜。 In recent years, it has been required to obtain higher definition ultrasonic images in order to obtain High-definition ultrasonic images require piezoelectric elements capable of transmitting and receiving ultrasonic waves at higher frequencies. In the case where the same material is used as the material of the piezoelectric element, it becomes possible to transmit and receive ultrasonic waves at a high frequency as the thickness of the piezoelectric film is lowered. Specifically, the driving frequency of the piezoelectric element is inversely proportional to the thickness of the piezoelectric element, and when the piezoelectric element having the piezoelectric film of 100 μm is driven at, for example, 20 MHz, the piezoelectric element made of the same material is used. When the piezoelectric film has a thickness of one-fifth of 100 μm, that is, 20 μm, the driving frequency is usually five times that of 20 MHz, that is, 100 MHz. When a piezoelectric element driven at such a high frequency of 100 MHz is used, the spatial resolution of the obtained ultrasonic image in the irradiation direction is five times that of the case where the driving frequency is 20 MHz. Therefore, in order to obtain a piezoelectric element capable of obtaining a higher definition ultrasonic image, it is necessary to form a piezoelectric film having a smaller film thickness.

先前技術文獻 Prior technical literature

專利文獻 Patent literature

專利文獻1:日本特開H07-45124號公報。 Patent Document 1: Japanese Laid-Open Patent Publication No. H07-45124.

然而,如上所述通過切削、研磨等機械加工對PZT製成的燒結體進行的薄膜化效率低,而且所得薄膜的薄度也有限。進而,如果對薄度為數十μm~數百μm的由PZT製成的燒結體進行機械加工則有可能產生裂痕等。 However, as described above, the thin film formation efficiency of the sintered body made of PZT by the machining such as cutting, grinding, etc. is low, and the thinness of the obtained film is also limited. Further, if a sintered body made of PZT having a thickness of several tens of μm to several hundreds of μm is machined, cracks or the like may occur.

本發明是鑑於上述問題而完成的,其目的在於能夠通過簡便的方法形成更薄的壓電膜,使用所得的壓電膜得到可收發高清超音波圖像的高頻超音波壓電元件。 The present invention has been made in view of the above problems, and an object thereof is to form a thin piezoelectric film by a simple method, and to obtain a high-frequency ultrasonic piezoelectric element capable of transmitting and receiving a high-definition ultrasonic image using the obtained piezoelectric film.

為了達成上述目的,本發明通過採用噴塗法將溶膠-凝膠溶液與壓電粉末的複合體塗佈在電極上而形成壓電膜,製造高頻超音波壓電元件。 In order to achieve the above object, the present invention produces a high-frequency ultrasonic piezoelectric element by applying a composite of a sol-gel solution and a piezoelectric powder onto an electrode by a spray coating method to form a piezoelectric film.

具體而言,本發明所述的高頻超音波壓電元件的製造方法特徵在於,包括:準備下部電極的步驟;採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,對所塗佈的複合體進行燒結形成壓電膜的步驟;以及在壓電膜上形成上部電極的步驟。 Specifically, the method for manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention includes the steps of: preparing a lower electrode; and coating a composite containing a sol-gel solution and a piezoelectric powder on the lower electrode by a spray coating method; a step of sintering the coated composite to form a piezoelectric film; and a step of forming an upper electrode on the piezoelectric film.

根據本發明所述的高頻超音波壓電元件的製造方法,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此通過適當調節噴出的該複合體的排出量、排出時間等,能夠簡便地在所需區域形成所需膜厚的壓電膜,還能夠形成數μm的極薄壓電膜。 According to the method for producing a high-frequency ultrasonic piezoelectric element according to the present invention, a composite containing a sol-gel solution and a piezoelectric powder is applied onto the lower electrode by a spray coating method, so that the discharge amount of the composite discharged by appropriate adjustment is appropriately adjusted. The discharge time and the like can easily form a piezoelectric film having a desired film thickness in a desired region, and an extremely thin piezoelectric film of several μm can be formed.

本發明所述的高頻超音波壓電元件的製造方法中,在形成上部電極的步驟中,可以在壓電膜上配設具有配置成陣列(array)狀且將壓電膜露出的複數個開口部的遮罩,覆蓋壓電膜和遮罩形成上部電極,然後將遮罩除去。 In the method of manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of forming the upper electrode, a plurality of openings having an array shape and exposing the piezoelectric film may be disposed on the piezoelectric film. The mask covers the piezoelectric film and the mask to form the upper electrode, and then the mask is removed.

由此,在壓電膜上以陣列狀形成上部電極,因此所得的壓電元件可適用於所謂的相控陣型(phased array type)超音波探頭,這種超音波探頭能夠控制位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,利用電子掃描獲得有機體內部的截面圖像。 Thereby, the upper electrode is formed in an array on the piezoelectric film, and thus the obtained piezoelectric element can be applied to a so-called phased array type ultrasonic probe capable of controlling a plurality of upper electrodes. Each region of the piezoelectric film directly below emits ultrasonic waves with a specific time difference, and a cross-sectional image of the inside of the organism is obtained by electron scanning.

在此情況下,可以在準備下部電極的步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成壓電膜的步驟中,在凹部的底面形成壓電膜;在形成上部電極的步驟中,在壓電膜上形成配置成沿 凹部的延伸方向排列的複數個上部電極。 In this case, in the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction may be prepared; in the step of forming the piezoelectric film, a piezoelectric film is formed on the bottom surface of the concave portion; In the step of the electrode, the piezoelectric film is formed along the piezoelectric film a plurality of upper electrodes arranged in the extending direction of the concave portion.

由此,複數個上部電極在下部電極的凹部內沿該凹部的延伸方向(下部電極的長度方向)排列,因此可以抑制並彙聚從位於這些上部電極正下方的壓電膜的各區域發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 Thereby, a plurality of upper electrodes are arranged in the concave portion of the lower electrode in the extending direction of the concave portion (the longitudinal direction of the lower electrode), so that it is possible to suppress and converge the super-emission from each region of the piezoelectric film directly under the upper electrodes. The sound wave is diffused in a direction perpendicular to the extending direction of the concave portion (the width direction of the lower electrode). Therefore, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced to reduce the manufacturing cost.

本發明所述的高頻超音波壓電元件的製造方法中,可以在形成壓電膜的步驟中,在下部電極上配設具有配置成陣列狀且將下部電極露出的複數個開口部的遮罩,然後採用噴塗法在下部電極上塗佈複合體,對複合體進行燒結形成配置成陣列狀的複數個壓電膜。 In the method of manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of forming the piezoelectric film, a mask having a plurality of openings arranged in an array and exposing the lower electrode may be disposed on the lower electrode. Then, a composite body is coated on the lower electrode by a spray coating method, and the composite body is sintered to form a plurality of piezoelectric films arranged in an array.

由此,能夠簡便地在下部電極上形成配置成陣列狀的複數個薄壓電膜。另外,由於能夠以陣列狀形成複數個薄壓電膜,因此所得的壓電元件可適用於所謂的相控陣型超探頭,這種超音波探頭能夠控制複數個壓電膜相互以特定時間差發射超音波,利用電子掃描獲得有機體內部的截面圖像。 Thereby, a plurality of thin piezoelectric films arranged in an array can be easily formed on the lower electrode. In addition, since a plurality of thin piezoelectric films can be formed in an array, the obtained piezoelectric element can be applied to a so-called phased array type ultra-probe which can control a plurality of piezoelectric films to emit each other with a specific time difference. Sound waves, using electronic scanning to obtain a cross-sectional image of the interior of the organism.

在此情況下,可以在準備下部電極的步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成壓電膜的步驟中,在下部電極的凹部的底面形成配置成沿該凹部的延伸方向排列的複數個壓電膜。 In this case, in the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction may be prepared; in the step of forming the piezoelectric film, the bottom surface of the concave portion of the lower electrode is formed to be disposed along the A plurality of piezoelectric films arranged in the extending direction of the concave portion.

由此,複數個壓電膜在下部電極的凹部的底面沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從壓電膜發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量 降低製造成本。 Thereby, the plurality of piezoelectric films are arranged on the bottom surface of the concave portion of the lower electrode in the extending direction of the concave portion (the longitudinal direction of the lower electrode), so that the ultrasonic waves emitted from the piezoelectric film can be suppressed and concentrated in the direction perpendicular to the extending direction of the concave portion. The diffusion in the direction (the width direction of the lower electrode). Therefore, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced. Reduce manufacturing costs.

本發明所述的高頻超音波壓電元件的製造方法中,可以在準備下部電極的步驟中,準備端面具有凹部的棒狀下部電極;在形成壓電膜的步驟中,在下部電極的凹部的底面形成壓電膜。 In the method of manufacturing a high-frequency ultrasonic piezoelectric element according to the present invention, in the step of preparing the lower electrode, a rod-shaped lower electrode having a concave portion on the end surface may be prepared; and in the step of forming the piezoelectric film, on the bottom surface of the concave portion of the lower electrode A piezoelectric film is formed.

由此,在棒狀下部電極的端面上的凹部的底面形成壓電膜,因此能夠抑制並彙聚從壓電膜發射的超音波從棒狀下部電極的軸向向外側的擴散。因此,與上述情況相同,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。另外,通過在棒狀下部電極的端面設置例如單一的壓電膜,能夠適用於可利用機械掃描獲得有機體內部的截面圖像的所謂的單振子型超音波探頭,而非上述相控陣型超音波探頭。 Thereby, since the piezoelectric film is formed on the bottom surface of the concave portion on the end surface of the rod-shaped lower electrode, it is possible to suppress and concentrate the diffusion of the ultrasonic wave emitted from the piezoelectric film from the axial direction to the outer side of the rod-shaped lower electrode. Therefore, as in the case described above, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of components can be reduced to reduce the manufacturing cost. Further, by providing, for example, a single piezoelectric film on the end surface of the rod-shaped lower electrode, it is possible to apply to a so-called single-vibration type ultrasonic probe which can obtain a cross-sectional image of the inside of the organism by mechanical scanning, instead of the above-described phased array type ultrasonic wave. Probe.

本發明所述的高頻超音波壓電元件的製造方法中,可以使用由PZT製成的壓電粉末作為壓電粉末。 In the method for producing a high-frequency ultrasonic piezoelectric element according to the present invention, a piezoelectric powder made of PZT can be used as the piezoelectric powder.

本發明所述的高頻超音波壓電元件特徵在於,通過上述製造方法而得到,具備下部電極、採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體後進行燒結而形成的壓電膜、以及在壓電膜上形成的上部電極。 The high-frequency ultrasonic piezoelectric element according to the present invention is characterized in that, by the above-described manufacturing method, a lower electrode is provided, and a composite containing a sol-gel solution and a piezoelectric powder is applied onto the lower electrode by a spray method, followed by sintering. The piezoelectric film formed and the upper electrode formed on the piezoelectric film.

根據本發明所述的高頻超音波壓電元件,由於包含通過用噴塗法塗佈含有溶膠-凝膠溶液和壓電粉末的複合體而形成的壓電膜,因此能夠簡便地調整壓電膜的膜厚,也容易得到膜厚較薄的壓電膜。因此,由於具有膜厚較薄的壓電膜,容易得到能夠收發更高頻率的超音波的高頻超音波壓電元件。 The high-frequency ultrasonic piezoelectric element according to the present invention includes a piezoelectric film formed by applying a composite containing a sol-gel solution and a piezoelectric powder by a spray coating method, so that the film of the piezoelectric film can be easily adjusted. Thick, it is also easy to obtain a piezoelectric film with a thin film thickness. Therefore, since the piezoelectric film having a small film thickness is provided, it is easy to obtain a high-frequency ultrasonic piezoelectric element capable of transmitting and receiving a higher-frequency ultrasonic wave.

本發明所述的高頻超音波壓電元件中,上部電極可在壓電膜上以陣列狀形成有複數個。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the upper electrode may be formed in plural in an array on the piezoelectric film.

由此,上部電極在壓電膜上以陣列狀排列,因此所得的壓電元件可適用於所謂的相控陣型超音波探頭,這種超音波探頭通過控制位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,可利用電子掃描獲得有機體內部的截面圖像。 Thereby, the upper electrodes are arranged in an array on the piezoelectric film, and thus the obtained piezoelectric element can be applied to a so-called phased array type ultrasonic probe which controls the piezoelectricity directly under the plurality of upper electrodes Each region of the film emits ultrasonic waves with a certain time difference from each other, and an electron scanning can be used to obtain a cross-sectional image of the inside of the organism.

在此情況下,下部電極為板狀且其表面具有沿長度方向延伸的凹部,壓電膜形成在凹部的底面上,複數個上部電極可沿凹部的延伸方向排列而配置在壓電膜上。 In this case, the lower electrode has a plate shape and has a concave portion extending in the longitudinal direction on the surface thereof, and the piezoelectric film is formed on the bottom surface of the concave portion, and the plurality of upper electrodes are arranged on the piezoelectric film in the extending direction of the concave portion.

由此,複數個上部電極在下部電極的凹部內沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從位於這些上部電極正下方的壓電膜的各區域發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 Thereby, a plurality of upper electrodes are arranged in the concave portion of the lower electrode in the extending direction of the concave portion (the longitudinal direction of the lower electrode), so that it is possible to suppress and converge the super-emission from each region of the piezoelectric film directly under the upper electrodes. The sound wave is diffused in a direction perpendicular to the extending direction of the concave portion (the width direction of the lower electrode). Therefore, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced to reduce the manufacturing cost.

本發明所述的高頻超音波壓電元件中,壓電膜可在下部電極上以陣列狀形成有複數個。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the piezoelectric film may be formed in plural in an array on the lower electrode.

由此,由於壓電膜以陣列狀形成有複數個,因此能夠適用於所謂的相控陣型超音波探頭,這種超音波探頭控制複數個壓電膜相互以特定時間差發射超音波,從而可利用電子掃描獲得有機體內部的截面圖像。 Therefore, since the piezoelectric film is formed in a plurality of arrays, it can be applied to a so-called phased array type ultrasonic probe which controls a plurality of piezoelectric films to emit ultrasonic waves with a specific time difference, thereby making use of the ultrasonic film. An electronic scan obtains a cross-sectional image of the interior of the organism.

在此情況下,下部電極為板狀且其表面具有沿長度方向延伸的凹部,複數個壓電膜可沿該凹部的延伸方向排列而配置在下部電極的凹部的底面上。 In this case, the lower electrode has a plate shape and has a concave portion extending in the longitudinal direction on the surface thereof, and a plurality of piezoelectric films are arranged in the extending direction of the concave portion and disposed on the bottom surface of the concave portion of the lower electrode.

由此,複數個壓電膜在下部電極的凹部的底面沿該凹部的延伸方向(下部電極的長度方向)排列,因此能夠抑制並彙聚從壓電膜發射的超音波在與凹部的延伸方向垂直的方向(下部電極的寬度方向)上的擴散。因此,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。 Thereby, the plurality of piezoelectric films are arranged on the bottom surface of the concave portion of the lower electrode in the extending direction of the concave portion (the longitudinal direction of the lower electrode), so that the ultrasonic waves emitted from the piezoelectric film can be suppressed and concentrated in the direction perpendicular to the extending direction of the concave portion. The diffusion in the direction (the width direction of the lower electrode). Therefore, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of parts can be reduced to reduce the manufacturing cost.

本發明所述的高頻超音波壓電元件中,下部電極為棒狀且其端面具有凹部,壓電膜可形成在凹部的底面上。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the lower electrode has a rod shape and its end surface has a concave portion, and the piezoelectric film can be formed on the bottom surface of the concave portion.

由此,在棒狀下部電極的端面上的凹部的底面形成壓電膜,因此能夠抑制並彙聚從壓電膜發射的超音波從棒狀下部電極的軸向向外側的擴散。因此,與上述情況相同,該壓電元件用於超音波探頭時,無需設置聲透鏡,能夠減少部件數量降低製造成本。另外,通過在棒狀下部電極的端面設置例如單一的壓電膜,能夠適用於可利用機械掃描獲得有機體內部的截面圖像的所謂的單振子型超音波探頭,而非上述相控陣型超音波探頭。 Thereby, since the piezoelectric film is formed on the bottom surface of the concave portion on the end surface of the rod-shaped lower electrode, it is possible to suppress and concentrate the diffusion of the ultrasonic wave emitted from the piezoelectric film from the axial direction to the outer side of the rod-shaped lower electrode. Therefore, as in the case described above, when the piezoelectric element is used for an ultrasonic probe, it is not necessary to provide an acoustic lens, and the number of components can be reduced to reduce the manufacturing cost. Further, by providing, for example, a single piezoelectric film on the end surface of the rod-shaped lower electrode, it is possible to apply to a so-called single-vibration type ultrasonic probe which can obtain a cross-sectional image of the inside of the organism by mechanical scanning, instead of the above-described phased array type ultrasonic wave. Probe.

本發明所述的高頻超音波壓電元件中,壓電粉末可為由PZT製成的壓電粉末。 In the high-frequency ultrasonic piezoelectric element according to the present invention, the piezoelectric powder may be a piezoelectric powder made of PZT.

本發明所述的高頻超音波探頭特徵在於,包含上述高頻超音波壓電元件。 The high frequency ultrasonic probe according to the present invention is characterized by comprising the above-described high frequency ultrasonic piezoelectric element.

根據本發明所述的高頻超音波探頭,由於包含具有上述作用和效果的高頻超音波壓電元件,因此能夠簡便地得到更薄的壓電膜並可收發高頻率的超音波,其結果,能夠獲得更高清晰度的圖像。 According to the high-frequency ultrasonic probe of the present invention, since the high-frequency ultrasonic piezoelectric element having the above-described effects and effects is included, a thinner piezoelectric film can be easily obtained, and a high-frequency ultrasonic wave can be transmitted and received, and as a result, a higher frequency can be obtained. High definition image.

根據本發明所述的高頻超音波壓電元件、其製造 方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此可以簡便地得到極薄的壓電膜,其結果可收發更高頻率的超音波,能夠得到可獲得更高清晰度的圖像的高頻超音波探頭。 High-frequency ultrasonic piezoelectric element according to the present invention, manufacture thereof The method and the high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element apply a composite containing a sol-gel solution and a piezoelectric powder on the lower electrode by a spray method, so that an extremely thin piezoelectric film can be easily obtained. As a result, a higher-frequency ultrasonic wave can be transmitted and received, and a high-frequency ultrasonic probe capable of obtaining a higher-definition image can be obtained.

10、20、30‧‧‧高頻超音波壓電元件 10, 20, 30‧‧‧ High-frequency ultrasonic piezoelectric components

11、21、31‧‧‧下部電極 11, 21, 31‧‧‧ lower electrode

12、22、32‧‧‧壓電膜 12, 22, 32‧‧‧ piezoelectric film

13‧‧‧遮罩層 13‧‧‧ mask layer

14‧‧‧開口部 14‧‧‧ openings

15、25、35‧‧‧上部電極 15, 25, 35‧‧‧ upper electrode

26、36‧‧‧凹部 26, 36‧‧‧ recess

圖1(a)~(f)係依次示出本發明的實施例1之高頻超音波壓電元件的製造工序的剖視圖。 1(a) to 1(f) are cross-sectional views showing, in order, a manufacturing process of the high-frequency ultrasonic piezoelectric element according to the first embodiment of the present invention.

圖2係表示本發明的實施例1之高頻超音波壓電元件的俯視圖。 Fig. 2 is a plan view showing a high-frequency ultrasonic piezoelectric element according to a first embodiment of the present invention.

圖3係表示本發明的實施例1的一個變形例之高頻超音波壓電元件的剖視圖。 Fig. 3 is a cross-sectional view showing a high-frequency ultrasonic piezoelectric element according to a modification of the first embodiment of the present invention.

圖4(a)係表示本發明的實施例2之高頻超音波壓電元件的剖視圖,(b)係表示本發明的實施例2之高頻超音波壓電元件的俯視圖。 Fig. 4 (a) is a cross-sectional view showing a high-frequency ultrasonic piezoelectric element according to a second embodiment of the present invention, and Fig. 4 (b) is a plan view showing a high-frequency ultrasonic piezoelectric element according to a second embodiment of the present invention.

以下,基於圖式對本發明較好之實施例進行詳細說明。 Hereinafter, preferred embodiments of the present invention will be described in detail based on the drawings.

實施例1 Example 1

以下,參照圖1(a)~(f)和圖2對本發明的實施例1之高頻超音波壓電元件10的製造方法及其構成進行說明。 Hereinafter, a method of manufacturing the high-frequency ultrasonic piezoelectric element 10 according to the first embodiment of the present invention and a configuration thereof will be described with reference to FIGS. 1(a) to 1(f) and FIG.

首先,如圖1(a)所示,準備平坦的板狀下部電極11。作為下部電極11的材料,只要是通常用作電極的金屬構成的導電性材料則無特別限制。另外,下部電極11的厚度也無特別限制,只要從壓電元件的小型化和強度的觀點出發適當選擇即可,例如為10μm~150μm。 First, as shown in Fig. 1(a), a flat plate-shaped lower electrode 11 is prepared. The material of the lower electrode 11 is not particularly limited as long as it is a conductive material made of a metal which is generally used as an electrode. In addition, the thickness of the lower electrode 11 is not particularly limited, and may be appropriately selected from the viewpoint of downsizing and strength of the piezoelectric element, and is, for example, 10 μm to 150 μm.

接著,如圖1(b)所示,在下部電極11上形成壓電膜12。壓電膜12通過採用噴塗法利用噴塗裝置將含有溶膠-凝膠溶液和壓電粉末的複合體塗佈在下部電極11上,對所塗佈的複合體進行燒結而得到。例如,溶膠-凝膠溶液通過將金屬醇鹽溶解在乙醇、甲醇等溶劑中而得到,較佳為使用含有鉛醇鹽、鋯醇鹽和鈦醇鹽的PZT溶膠-凝膠溶液。另外,壓電粉末的材料可以使用PZT。溶膠-凝膠溶液與壓電粉末的組成比(重量比)可為例如溶膠-凝膠溶液:壓電粉末=1:1~2:1。另外,壓電粉末的粒徑較佳為50~1000nm。噴塗法中復合體的排出量、排出時間、以及從噴出至下部電極的距離等可以根據所形成的壓電膜的膜厚等適當改變。為了得到可收發更高頻率的超音波的壓電元件,可以對壓電膜進行薄膜化,若採用噴塗法則可通過控制上述複合體的排出量或排出時間等容易地進行薄膜化,例如,在排出時間為200ms的條件下,可以形成約10μm膜厚的複合體層。採用該噴塗法進行塗佈後,將復合體層在約150℃下乾燥5分鐘、在約450℃下臨時燒結(temporarily sintering)5分鐘、在約650℃下燒成5分鐘,然後例如通過用電暈放電(corona discharge)進行極化處理得到壓電膜12。 Next, as shown in FIG. 1(b), the piezoelectric film 12 is formed on the lower electrode 11. The piezoelectric film 12 is obtained by applying a composite containing a sol-gel solution and a piezoelectric powder to the lower electrode 11 by a spray coating method by a spray coating method, and sintering the applied composite. For example, the sol-gel solution is obtained by dissolving a metal alkoxide in a solvent such as ethanol or methanol, and preferably a PZT sol-gel solution containing a lead alkoxide, a zirconium alkoxide and a titanium alkoxide. In addition, PZT can be used as the material of the piezoelectric powder. The composition ratio (weight ratio) of the sol-gel solution to the piezoelectric powder may be, for example, a sol-gel solution: piezoelectric powder = 1:1 to 2:1. Further, the piezoelectric powder preferably has a particle diameter of 50 to 1000 nm. The discharge amount of the composite, the discharge time, the distance from the discharge to the lower electrode, and the like in the spray method can be appropriately changed depending on the film thickness of the piezoelectric film to be formed or the like. In order to obtain a piezoelectric element capable of transmitting and receiving a higher-frequency ultrasonic wave, the piezoelectric film can be thinned, and if the spraying method is used, the film can be easily thinned by controlling the discharge amount or discharge time of the composite body, for example, Under the condition that the discharge time is 200 ms, a composite layer having a film thickness of about 10 μm can be formed. After coating by the spray coating method, the composite layer was dried at about 150 ° C for 5 minutes, temporarily sintered at about 450 ° C for 5 minutes, and fired at about 650 ° C for 5 minutes, and then, for example, by electricity. The corona discharge is subjected to polarization treatment to obtain a piezoelectric film 12.

接著,如圖1(c)所示,在壓電膜12上配設遮罩層13。遮罩層13的材料可以使用例如樹脂、玻璃、木材或紙等材料,但並不限於此。 Next, as shown in FIG. 1(c), a mask layer 13 is disposed on the piezoelectric film 12. The material of the mask layer 13 may be, for example, a material such as resin, glass, wood or paper, but is not limited thereto.

接著,如圖1(d)所示,在遮罩層13上形成將壓電膜12露出的複數個開口部14。開口部14設置在之後需要形成上部電極15的位置,在本實施例中沿下部電極的長度方向等間隔配置。開口部14的形成根據遮罩層13的材料,可以採用蝕刻法等化學處理,也可以採用切削等機械處理。另,本實施例中,將遮罩層13設置在壓電膜12上之後形成開口部14,但也可以 在將遮罩層13設置在壓電膜12上之前預先在遮罩層13上形成開口部14,再將形成有開口部14的遮罩層13配置在壓電膜12上。 Next, as shown in FIG. 1(d), a plurality of openings 14 exposing the piezoelectric film 12 are formed on the mask layer 13. The opening portion 14 is provided at a position where the upper electrode 15 needs to be formed later, and is disposed at equal intervals along the longitudinal direction of the lower electrode in the present embodiment. The formation of the opening portion 14 may be chemically treated by an etching method or the like according to the material of the mask layer 13, or may be mechanically treated by cutting or the like. In the present embodiment, the opening portion 14 is formed after the mask layer 13 is disposed on the piezoelectric film 12, but The opening portion 14 is formed in advance on the mask layer 13 before the mask layer 13 is placed on the piezoelectric film 12, and the mask layer 13 on which the opening portion 14 is formed is placed on the piezoelectric film 12.

接著,如圖1(e)所示,在壓電膜12和遮罩層13上形成上部電極15。上部電極15的材料只要是通常可用作電極的導電性材料則無特別限制,例如可使用金、銀等金屬。另外,上部電極15的形成可以採用蒸鍍法、濺射法等常規方法。上部電極15的厚度也無特別限制,只要從壓電元件的小型化和強度的觀點出發適當選擇即可,例如為10μm~150μm。 Next, as shown in FIG. 1(e), the upper electrode 15 is formed on the piezoelectric film 12 and the mask layer 13. The material of the upper electrode 15 is not particularly limited as long as it is a conductive material which can be generally used as an electrode. For example, a metal such as gold or silver can be used. Further, the upper electrode 15 can be formed by a conventional method such as a vapor deposition method or a sputtering method. The thickness of the upper electrode 15 is not particularly limited, and may be appropriately selected from the viewpoint of miniaturization and strength of the piezoelectric element, and is, for example, 10 μm to 150 μm.

接著,如圖1(f)所示,將遮罩層13除去,從而僅在開口部14內的壓電膜12上殘留上部電極15。雖未圖示,之後通過將與電源相連的引線分別連接在下部電極11和複數個上部電極15上,可以得到本實施例之高頻超音波壓電元件10。 Next, as shown in FIG. 1(f), the mask layer 13 is removed, and the upper electrode 15 remains only on the piezoelectric film 12 in the opening portion 14. Although not shown, the high-frequency ultrasonic piezoelectric element 10 of the present embodiment can be obtained by connecting the leads connected to the power source to the lower electrode 11 and the plurality of upper electrodes 15, respectively.

為方便起見,圖1中示出了在遮罩層13上形成3個開口部14,形成3個上部電極15,但是當然並不限於此,也可以如圖2所示形成5個上部電極15,還可以形成5個以上所需數量的上部電極15。本實施例中,在壓電膜12上以陣列狀形成複數個上部電極15,具體而言,如圖1(f)和圖2所示,上部電極15配置成沿下部電極11的長度方向排列。由此,通過在用於將有機體內部的截面圖像化的超音波探頭中使用配置有上部電極15的形態的高頻超音波壓電元件10,可以得到所謂的相控陣型的超音波探頭,這種超音波探頭通過控制對上部電極施加電壓的時刻以使位於複數個上部電極正下方的壓電膜的各區域相互以特定時間差發射超音波,從而可利用電子掃描獲得有機體內部的截面圖像。本實施例之包含高頻超音波壓電元件的高頻超音波探頭與以往的超音波探頭同樣,在探頭本體上從基端側向前端側依 次配設有基材(backing material)、本實施例之壓電元件、聲匹配層(acoustic matching layer)和聲透鏡(聲透鏡)而構成。但是,本實施例之高頻超音波探頭中,基材和聲匹配層不是必要結構。 For the sake of convenience, FIG. 1 shows that three opening portions 14 are formed on the mask layer 13, and three upper electrodes 15 are formed. However, of course, the present invention is not limited thereto, and five upper electrodes may be formed as shown in FIG. 15, it is also possible to form more than five required numbers of upper electrodes 15. In the present embodiment, a plurality of upper electrodes 15 are formed in an array on the piezoelectric film 12. Specifically, as shown in FIG. 1(f) and FIG. 2, the upper electrodes 15 are arranged to be arranged along the length direction of the lower electrodes 11. . Thus, by using the high-frequency ultrasonic piezoelectric element 10 in which the upper electrode 15 is disposed in the ultrasonic probe for imaging the cross section inside the organism, a so-called phased array type ultrasonic probe can be obtained. The ultrasonic probe emits ultrasonic waves by applying a voltage to the upper electrode so that the respective regions of the piezoelectric film located directly under the plurality of upper electrodes emit ultrasonic waves with a specific time difference, whereby the cross-sectional image of the inside of the organism can be obtained by electronic scanning. The high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element of the present embodiment is similar to the conventional ultrasonic probe in the probe body from the proximal end side to the distal end side. The backing is provided with a backing material, a piezoelectric element of the present embodiment, an acoustic matching layer, and an acoustic lens (acoustic lens). However, in the high-frequency ultrasonic probe of the present embodiment, the substrate and the acoustic matching layer are not essential structures.

另,本實施例中,如上所示,利用具有開口部的遮罩在覆蓋下部電極形成的壓電膜上形成複數個上部電極,但也可以利用具有以陣列狀形成的開口部的遮罩,在下部電極上形成配置成陣列狀的複數個壓電膜,在這些複數個壓電膜上分別形成上部電極。由此,在噴塗壓電膜材料時複數個壓電膜彼此分離,因此無需為了防止壓電元件內的串音(crosstalk)而進行切割(dicing)壓電膜的切斷處理。特別是,由於薄壓電膜的切斷易產生裂痕等而難以進行,因此在這一點上有利。 Further, in the present embodiment, as described above, a plurality of upper electrodes are formed on the piezoelectric film formed to cover the lower electrode by the mask having the opening, but a mask having openings formed in an array may be used. A plurality of piezoelectric films arranged in an array are formed on the lower electrode, and upper electrodes are formed on the plurality of piezoelectric films, respectively. Thereby, since a plurality of piezoelectric films are separated from each other when the piezoelectric film material is sprayed, it is not necessary to perform a cutting process of dicing the piezoelectric film in order to prevent crosstalk in the piezoelectric element. In particular, it is advantageous in that it is difficult to perform the cracking of the thin piezoelectric film due to cracking or the like.

本實施方式中,使用平坦的板狀下部電極11製作高頻超音波壓電元件10,但也可以使用表面具有沿長度方向延伸的凹部的板狀下部電極,在其凹部內形成壓電膜和上部電極,從而形成高頻超音波壓電元件。將這種形態的高頻超音波壓電元件作為實施例1的一個變形例,參照圖3進行說明。另,本實施例中,省略與實施例1的相同點的說明,僅對不同點進行詳細說明。另外,圖3是表示除了下部電極具有凹部以外與圖2所示的高頻超音波壓電元件同等的超音波壓電元件的圖,特別表示在其中一個上部電極上沿上部電極的長度方向的截面。即,本變形例之高頻超音波壓電元件中,上部電極沿垂直於圖3紙面的方向排列有複數個。 In the present embodiment, the high-frequency ultrasonic piezoelectric element 10 is formed using the flat plate-shaped lower electrode 11. However, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction on the surface may be used, and a piezoelectric film and an upper electrode may be formed in the concave portion. Thereby forming a high frequency ultrasonic piezoelectric element. A high-frequency ultrasonic piezoelectric element of this form will be described as a modification of the first embodiment with reference to FIG. 3. In the present embodiment, the description of the same points as those of the first embodiment will be omitted, and only the differences will be described in detail. In addition, FIG. 3 is a view showing an ultrasonic piezoelectric element equivalent to the high-frequency ultrasonic piezoelectric element shown in FIG. 2 except that the lower electrode has a concave portion, and particularly shows a cross section along the longitudinal direction of the upper electrode on one of the upper electrodes. That is, in the high-frequency ultrasonic piezoelectric element according to the present modification, the upper electrodes are arranged in plural in a direction perpendicular to the sheet surface of Fig. 3 .

如圖3所示,本變形例之高頻超音波壓電元件20具備表面形成有凹部26的下部電極21。凹部26沿下部電極21的長度方向延伸形成。另外,凹部26的開口的周緣部(下部電極21的表面與凹部26的邊界部)帶有倒角 (rounding)。在下部電極21的凹部26的底面上形成有壓電膜22。壓電膜22沿凹部26的底面形狀形成。在壓電膜22上形成有上部電極25。上部電極25與上述實施例1同樣,沿下部電極21的長度方向、即沿凹部的延伸方向配設有複數個。另,本變形例之高頻超音波壓電元件20除了使用具有凹部26的下部電極21以外,壓電膜22和上部電極25的形成等,可以採用與上述實施例1之高頻超音波壓電元件10同樣的方法進行。 As shown in FIG. 3, the high-frequency ultrasonic piezoelectric element 20 of the present modification includes a lower electrode 21 having a concave portion 26 formed on its surface. The recess 26 is formed to extend in the longitudinal direction of the lower electrode 21. Further, the peripheral edge portion of the opening of the recessed portion 26 (the boundary portion between the surface of the lower electrode 21 and the recessed portion 26) is chamfered (rounding). A piezoelectric film 22 is formed on the bottom surface of the concave portion 26 of the lower electrode 21. The piezoelectric film 22 is formed along the bottom surface shape of the concave portion 26. An upper electrode 25 is formed on the piezoelectric film 22. Similarly to the above-described first embodiment, the upper electrode 25 is provided in plural in the longitudinal direction of the lower electrode 21, that is, in the extending direction of the concave portion. In the high-frequency ultrasonic piezoelectric element 20 of the present modification, the piezoelectric film 22 and the upper electrode 25 can be formed in the same manner as the high-frequency ultrasonic piezoelectric element 10 of the first embodiment, except that the lower electrode 21 having the concave portion 26 is used. The method is carried out.

另,本變形例中,也在下部電極上形成有沿凹部的延伸方向排列的複數個壓電膜,成為在這些複數個壓電膜上分別形成上部電極的形態。由此,如上所示,在噴塗壓電膜材料時複數個壓電膜彼此分離,因此無需為了防止壓電元件內的串音而進行壓電膜的切斷等處理。 Further, in the present modification, a plurality of piezoelectric films arranged in the extending direction of the concave portion are formed on the lower electrode, and the upper electrode is formed on each of the plurality of piezoelectric films. As a result, as described above, since a plurality of piezoelectric films are separated from each other when the piezoelectric film material is sprayed, it is not necessary to perform processing such as cutting of the piezoelectric film in order to prevent crosstalk in the piezoelectric element.

本變形例之高頻超音波壓電元件20中,下部電極21的表面形成有與壓電膜22的排列方向並行延伸的凹部26,因此能夠抑制並彙聚從配設在凹部26內的壓電膜22發射的超音波在與凹部26的延伸方向垂直的方向(下部電極21的寬度方向)上的擴散。其結果,該高頻超音波壓電元件20用於超音波探頭時,無需設置聲透鏡。 In the high-frequency ultrasonic piezoelectric element 20 of the present modification, the surface of the lower electrode 21 is formed with the concave portion 26 extending in parallel with the arrangement direction of the piezoelectric film 22. Therefore, the piezoelectric film 22 disposed in the concave portion 26 can be suppressed and concentrated. The emitted ultrasonic waves are diffused in a direction perpendicular to the extending direction of the concave portion 26 (the width direction of the lower electrode 21). As a result, when the high-frequency ultrasonic piezoelectric element 20 is used for an ultrasonic probe, it is not necessary to provide an acoustic lens.

實施例2 Example 2

接著,參照圖4對本發明的實施例2之高頻超音波壓電元件30進行說明。另,本實施例中,省略與上述實施例1及其一個變形例的相同點的說明,僅對不同點進行詳細說明。本實施例之高頻超音波壓電元件30與實施例1之高頻超音波壓電元件10相比較,特別在使用棒狀下部電極31作為下部電極、以及形成單一的壓電膜32和上部電極35方面不同。 Next, a high-frequency ultrasonic piezoelectric element 30 according to a second embodiment of the present invention will be described with reference to Fig. 4 . In the present embodiment, the description of the same points as those of the above-described first embodiment and a modification thereof will be omitted, and only differences will be described in detail. The high-frequency ultrasonic piezoelectric element 30 of the present embodiment is different from the high-frequency ultrasonic piezoelectric element 10 of the first embodiment in that the rod-shaped lower electrode 31 is used as the lower electrode and the single piezoelectric film 32 and the upper electrode 35 are formed. .

如圖4(a)和(b)所示,本實施例之高頻超音波壓電元件30中, 下部電極31如上所述為棒狀,特別為圓柱形狀。另外,該下部電極31的一個端面形成有具有圓形開口的球缺形(spherical segment shaped)凹部36。凹部36的開口的周緣部(下部電極31的表面與凹部36的邊界部)帶有倒角。例如,下部電極31橫截面的直徑為10mm,凹部36的開口徑為6mm,凹部36的深度為2mm。當然,這些尺寸僅為一例,並不限於此,也可以適當選擇這些尺寸。 As shown in FIGS. 4(a) and (b), in the high-frequency ultrasonic piezoelectric element 30 of the present embodiment, The lower electrode 31 has a rod shape as described above, and is particularly cylindrical. Further, one end surface of the lower electrode 31 is formed with a spherical segment shaped recess 36 having a circular opening. The peripheral edge portion of the opening of the recessed portion 36 (the boundary portion between the surface of the lower electrode 31 and the recessed portion 36) is chamfered. For example, the lower electrode 31 has a diameter of 10 mm in cross section, the recess 36 has an opening diameter of 6 mm, and the recess 36 has a depth of 2 mm. Of course, these dimensions are only an example, and are not limited thereto, and these dimensions may be appropriately selected.

在下部電極31的凹部36的底面上形成有壓電膜32。壓電膜32沿凹部36的底面形狀形成。本實施例中,與實施例1同樣,可以通過採用噴塗法進行的複合體的塗佈和燒結形成壓電膜32。壓電膜32上形成有上部電極35。上部電極35也沿凹部36的底面形狀形成。本實施例之高頻超音波壓電元件30中,在形成上部電極35之前,不特別形成具有複數個開口部的遮罩層,而是採用蒸鍍法等方法在壓電膜32上形成由單一膜構成的上部電極35。另,雖未圖示,與實施例1同樣,在下部電極31和上部電極35上分別連接有與電源相連的引線。 A piezoelectric film 32 is formed on the bottom surface of the concave portion 36 of the lower electrode 31. The piezoelectric film 32 is formed along the shape of the bottom surface of the recess 36. In the present embodiment, as in the first embodiment, the piezoelectric film 32 can be formed by coating and sintering of the composite by the spray coating method. An upper electrode 35 is formed on the piezoelectric film 32. The upper electrode 35 is also formed along the bottom surface of the recess 36. In the high-frequency ultrasonic piezoelectric element 30 of the present embodiment, before the upper electrode 35 is formed, a mask layer having a plurality of openings is not particularly formed, but a single film is formed on the piezoelectric film 32 by a vapor deposition method or the like. The upper electrode 35 is constructed. Further, although not shown, in the same manner as in the first embodiment, leads connected to a power source are connected to the lower electrode 31 and the upper electrode 35, respectively.

本實施例之高頻超音波壓電元件30中,棒狀下部電極31的端面形成有壓電膜32和上部電極35,因此可將其用於以機械掃描的方式使用的單振子(single vibrator)型超音波探頭。另,本實施例之包含高頻超音波壓電元件30的高頻超音波探頭可為與上述實施例1同樣的結構。另外,本實施例之高頻超音波壓電元件30中,在形成於棒狀下部電極31端面的凹部36內形成有壓電膜32和上部電極35,因此從壓電膜32發射的超音波被匯聚而不會從下部電極31的軸向向外側擴散。其結果,該高頻超音波壓電元件30用於超音波探頭時,無需設置聲透鏡。 In the high-frequency ultrasonic piezoelectric element 30 of the present embodiment, the end surface of the rod-shaped lower electrode 31 is formed with the piezoelectric film 32 and the upper electrode 35, so that it can be used for a single vibrator type which is used for mechanical scanning. Ultrasonic probe. Further, the high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element 30 of the present embodiment can have the same configuration as that of the first embodiment. Further, in the high-frequency ultrasonic piezoelectric element 30 of the present embodiment, the piezoelectric film 32 and the upper electrode 35 are formed in the concave portion 36 formed on the end surface of the rod-shaped lower electrode 31, and thus the ultrasonic waves emitted from the piezoelectric film 32 are concentrated. It does not spread from the axial direction of the lower electrode 31 to the outside. As a result, when the high-frequency ultrasonic piezoelectric element 30 is used for an ultrasonic probe, it is not necessary to provide an acoustic lens.

如上所述,根據本發明所述的高頻超音波壓電元件、其製造方法、以及包含該高頻超音波壓電元件的高頻超音波探頭,採用噴塗法在下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,因此可以簡便地得到極薄的壓電膜,其結果能夠收發更高頻率的超音波,能夠得到可獲得更高清晰度的圖像的高頻超音波探頭。 As described above, the high-frequency ultrasonic piezoelectric element according to the present invention, the method of manufacturing the same, and the high-frequency ultrasonic probe including the high-frequency ultrasonic piezoelectric element are coated with a sol-gel solution and a pressure on the lower electrode by a spray coating method. Since the composite of the electric powder can easily obtain an extremely thin piezoelectric film, as a result, it is possible to transmit and receive a higher-frequency ultrasonic wave, and a high-frequency ultrasonic probe capable of obtaining a higher-definition image can be obtained.

本發明之實施例並不限定於上述實施例,可於不脫離本發明之主旨之範圍內進行各種變更。 The embodiments of the present invention are not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

10‧‧‧高頻超音波壓電元件 10‧‧‧High frequency ultrasonic piezoelectric element

11‧‧‧下部電極 11‧‧‧ lower electrode

12‧‧‧壓電膜 12‧‧‧Piezoelectric film

13‧‧‧遮罩層 13‧‧‧ mask layer

14‧‧‧開口部 14‧‧‧ openings

15‧‧‧上部電極 15‧‧‧Upper electrode

Claims (15)

一種高頻超音波壓電元件之製造方法,其特徵在於包含以下之步驟:準備下部電極之步驟;採用噴塗法在上述下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體,對所塗佈的上述複合體進行燒結形成壓電膜之步驟;以及在上述壓電膜上形成上部電極之步驟。 A method for manufacturing a high-frequency ultrasonic piezoelectric element, comprising the steps of: preparing a lower electrode; applying a composite containing a sol-gel solution and a piezoelectric powder to the lower electrode by spraying; a step of sintering the coated composite body to form a piezoelectric film; and forming an upper electrode on the piezoelectric film. 如請求項1之高頻超音波壓電元件之製造方法,其中在形成上述上部電極之步驟中,在上述壓電膜上配設具有配置成陣列狀且將上述壓電膜露出的複數個開口部之遮罩,覆蓋上述壓電膜和遮罩形成上部電極,然後將上述遮罩除去。 The method of manufacturing a high-frequency ultrasonic piezoelectric element according to claim 1, wherein in the step of forming the upper electrode, a plurality of openings having an array and exposing the piezoelectric film are disposed on the piezoelectric film. A mask covers the piezoelectric film and the mask to form an upper electrode, and then the mask is removed. 如請求項2之高頻超音波壓電元件之製造方法,其中在準備上述下部電極之步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成上述壓電膜之步驟中,在上述凹部的底面形成上述壓電膜;在形成上述上部電極之步驟中,在上述壓電膜上形成配置成沿上述凹部的延伸方向排列的複數個上部電極。 The method of manufacturing a high-frequency ultrasonic piezoelectric element according to claim 2, wherein in the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in a longitudinal direction is prepared; and in the step of forming the piezoelectric film, The piezoelectric film is formed on the bottom surface of the concave portion; and in the step of forming the upper electrode, a plurality of upper electrodes arranged in the extending direction of the concave portion are formed on the piezoelectric film. 如請求項1之高頻超音波壓電元件之製造方法,其中在形成上述壓電膜之步驟中,在上述下部電極上配設具有配置成陣列狀且將上述下部電極露出的複數個開口部之遮罩,然後採用噴塗法在上述下部電極上塗佈上述複合體,對上述複合體進行燒結形成配置成陣列狀的複數個壓電膜。 The method of manufacturing a high-frequency ultrasonic piezoelectric element according to claim 1, wherein in the step of forming the piezoelectric film, a plurality of openings having an array of the openings and exposing the lower electrodes are disposed on the lower electrode. The cover is then coated on the lower electrode by a spray method to form the composite, and the composite is sintered to form a plurality of piezoelectric films arranged in an array. 如請求項4之高頻超音波壓電元件之製造方法,其中 在準備上述下部電極之步驟中,準備表面具有沿長度方向延伸的凹部的板狀下部電極;在形成上述壓電膜之步驟中,在上述下部電極的上述凹部的底面形成配置成沿上述凹部的延伸方向排列的複數個壓電膜。 A method of manufacturing a high frequency ultrasonic piezoelectric element according to claim 4, wherein In the step of preparing the lower electrode, a plate-shaped lower electrode having a concave portion extending in the longitudinal direction is prepared; and in the step of forming the piezoelectric film, a bottom surface of the concave portion of the lower electrode is disposed along the concave portion A plurality of piezoelectric films arranged in the extending direction. 如請求項1之高頻超音波壓電元件之製造方法,其中在準備上述下部電極之步驟中,準備端面具有凹部的棒狀下部電極;在形成上述壓電膜之步驟中,在上述下部電極的上述凹部的底面形成壓電膜。 The method of manufacturing a high-frequency ultrasonic piezoelectric element according to claim 1, wherein in the step of preparing the lower electrode, a rod-shaped lower electrode having a concave portion on an end surface is prepared; and in the step of forming the piezoelectric film, the above-mentioned lower electrode The bottom surface of the recess forms a piezoelectric film. 如請求項1至6中任一項之高頻超音波壓電元件之製造方法,其中使用由PZT製成的壓電粉末作為上述壓電粉末。 The method of producing a high-frequency ultrasonic piezoelectric element according to any one of claims 1 to 6, wherein a piezoelectric powder made of PZT is used as the piezoelectric powder. 一種高頻超音波壓電元件,其特徵在於如請求項1之高頻超音波壓電元件之製造方法所製造之高頻超音波壓電元件,上述高頻超音波壓電元件具備:下部電極;採用噴塗法在上述下部電極上塗佈含有溶膠-凝膠溶液和壓電粉末的複合體後進行燒結而形成的壓電膜;以及在上述壓電膜上形成的上部電極。 A high-frequency ultrasonic piezoelectric element characterized by a high-frequency ultrasonic piezoelectric element manufactured by the method of manufacturing a high-frequency ultrasonic piezoelectric element according to claim 1, wherein the high-frequency ultrasonic piezoelectric element comprises: a lower electrode; and the lower electrode is sprayed a piezoelectric film formed by applying a composite containing a sol-gel solution and a piezoelectric powder and then sintering, and an upper electrode formed on the piezoelectric film. 如請求項8之高頻超音波壓電元件,其中上述上部電極在上述壓電膜上以陣列狀形成有複數個。 The high-frequency ultrasonic piezoelectric element according to claim 8, wherein the upper electrode is formed in plural in an array on the piezoelectric film. 如請求項9之高頻超音波壓電元件,其中上述下部電極為板狀,且其表面具有沿長度方向延伸的凹部;上述壓電膜形成在上述凹部的底面上; 複數個上述上部電極沿上述凹部的延伸方向排列而配置在上述壓電膜上。 The high-frequency ultrasonic piezoelectric element according to claim 9, wherein the lower electrode has a plate shape, and a surface thereof has a concave portion extending in a longitudinal direction; the piezoelectric film is formed on a bottom surface of the concave portion; A plurality of the upper electrodes are arranged in the extending direction of the concave portion and are disposed on the piezoelectric film. 如請求項8之高頻超高音波壓電元件,其中上述壓電膜在上述下部電極上以陣列形狀形成有複數個。 The high-frequency supersonic wave piezoelectric element according to claim 8, wherein the piezoelectric film is formed in plural in an array shape on the lower electrode. 如請求項11之高頻超高音波壓電元件,其中上述下部電極為板狀,且其表面具有沿長度方向延伸的凹部;複數個上述壓電膜沿該凹部的延伸方向排列而配置在上述下部電極的上述凹部的底面上。 The high-frequency supersonic piezoelectric element according to claim 11, wherein the lower electrode has a plate shape, and a surface thereof has a concave portion extending in a longitudinal direction; and the plurality of piezoelectric films are arranged in the extending direction of the concave portion and disposed on the lower electrode On the bottom surface of the above recess. 如請求項8之高頻超高音波壓電元件,其中上述下部電極為棒狀,且其端面具有凹部;上述壓電膜形成在上述凹部的底面上。 The high-frequency supersonic piezoelectric element according to claim 8, wherein the lower electrode has a rod shape and has an end surface having a concave portion; and the piezoelectric film is formed on a bottom surface of the concave portion. 如請求項8至13中任一項之高頻超音波壓電元件,其中上述壓電粉末由PZT製成。 The high frequency ultrasonic piezoelectric element according to any one of claims 8 to 13, wherein the piezoelectric powder is made of PZT. 一種高頻超音波探頭,其特徵在於具備請求項8至14中任一項之高頻超音波壓電元件。 A high frequency ultrasonic probe comprising the high frequency ultrasonic piezoelectric element according to any one of claims 8 to 14.
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