TW201702067A - Thermoplastic liquid-crystal polymer film, and circuit board - Google Patents

Thermoplastic liquid-crystal polymer film, and circuit board Download PDF

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TW201702067A
TW201702067A TW105113024A TW105113024A TW201702067A TW 201702067 A TW201702067 A TW 201702067A TW 105113024 A TW105113024 A TW 105113024A TW 105113024 A TW105113024 A TW 105113024A TW 201702067 A TW201702067 A TW 201702067A
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liquid crystal
crystal polymer
polymer film
thermoplastic liquid
conductor layer
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TWI760302B (en
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Tatsuya Sunamoto
Takahiro Nakashima
Takeshi Takahashi
Minoru Onodera
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Kuraray Co
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
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  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
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Abstract

A thermoplastic liquid-crystal polymer film which, after having been thermocompression-bonded to a conductor layer, has a toughness, as measured by a method according to ASTM D882, of 30-100 MPa.

Description

熱塑性液晶聚合物薄膜及電路基板 Thermoplastic liquid crystal polymer film and circuit substrate

本發明係關於一種形成光學各向異性熔融層之熱塑性液晶聚合物薄膜(以下有時稱為熱塑性液晶聚合物薄膜,或者只稱為液晶聚合物薄膜)及電路基板。 The present invention relates to a thermoplastic liquid crystal polymer film (hereinafter sometimes referred to as a thermoplastic liquid crystal polymer film or simply a liquid crystal polymer film) which forms an optically anisotropic molten layer, and a circuit substrate.

近年來,個人電腦等資訊處理領域、行動電話等通訊設備領域有顯著的發展,此類電子、通訊設備上所使用的頻率正往GHz的區域發展。然而,一般而言,在這種高頻帶中,傳輸損失變大已為人所知,因此要求降低傳輸損失。 In recent years, significant progress has been made in the field of information processing such as personal computers and communication devices such as mobile phones. The frequencies used in such electronic and communication devices are developing in the GHz region. However, in general, in such a high frequency band, transmission loss becomes large, and thus it is required to reduce transmission loss.

不只是導體損失,介電損失也與高頻信號的傳輸損失有關。於是,為了抑制高頻信號的傳輸損失,提升資訊處理速度即信號之傳輸速度,而要求一種介電特性優異之電絕緣性基板材料。 Not only the conductor loss, but also the dielectric loss is related to the transmission loss of the high frequency signal. Therefore, in order to suppress the transmission loss of the high-frequency signal and increase the information processing speed, that is, the transmission speed of the signal, an electrically insulating substrate material having excellent dielectric characteristics is required.

從上述觀點來看,使用介電損失比聚醯亞胺薄膜小的熱塑性液晶聚合物薄膜作為絕緣性基板,並利用熱壓接將該液晶聚合物薄膜與導體層貼合而形成的電路基板正受到矚目。 From the above viewpoint, a thermoplastic liquid crystal polymer film having a dielectric loss smaller than that of the polyimide film is used as an insulating substrate, and the liquid crystal polymer film is bonded to the conductor layer by thermocompression bonding to form a circuit board. Received attention.

作為將液晶聚合物薄膜與導體層壓接時決定剝離強度(抗剝離強度或黏合強度)之要素,可以想到有 :因導體層之表面粗糙度所導致的定準效應(anchor effect)的機械性結合;導體層表面處理成分與樹脂之結合的化學性結合。作為提高導體層的定準效應之技術,有進行藉由在導體層上形成凹凸來提高定準效應,從而確保將導體層與絕緣層壓接時的剝離強度之處理,並且正在研究該凹凸形狀之最佳化。 As an element for determining the peel strength (peel strength or adhesive strength) when the liquid crystal polymer film is laminated to a conductor, it is conceivable that : Mechanical combination of an anchor effect due to the surface roughness of the conductor layer; chemical combination of the surface treatment component of the conductor layer and the resin. As a technique for improving the quasi-effect of the conductor layer, there is a process of improving the peeling strength when the conductor layer is laminated to the insulating layer by forming irregularities on the conductor layer, and the uneven shape is being studied. Optimized.

例如,專利文獻1(國際公開WO2012/020818號說明書)中揭示了一種覆金屬積層板,其係在液晶聚合物層的單面或雙面上具有金屬箔的覆金屬積層板,其中,金屬箔上的與液晶聚合物層接觸的面進行了粗化處理而在表層部具有突起物。還揭示了:由突起物的高度H相對於突起物的根基部分的寬度L之比所表示的高寬比(H/L)在3~20之範圍內,並且突起物之高度在0.1~2μm之範圍內,液晶聚合物層具有10~2000μm之厚度,且膜厚公差小於6%。 For example, Patent Document 1 (International Publication No. WO 2012/020818) discloses a metal-clad laminate which is a metal-clad laminate having a metal foil on one or both sides of a liquid crystal polymer layer, wherein a metal foil The upper surface in contact with the liquid crystal polymer layer is roughened to have protrusions in the surface layer portion. It is also revealed that the aspect ratio (H/L) represented by the ratio of the height H of the protrusion to the width L of the root portion of the protrusion is in the range of 3 to 20, and the height of the protrusion is 0.1 to 2 μm. Within the range, the liquid crystal polymer layer has a thickness of 10 to 2000 μm and a film thickness tolerance of less than 6%.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開WO2012/020818號說明書 [Patent Document 1] International Publication WO2012/020818

若為了提高導體層之定準效應而增大導體層之表面粗糙度,則在與熱塑性液晶聚合物薄膜等絕緣層積層而形成電路基板時的高頻特性會降低,因此從確保高頻特性之觀點來看,較理想的是使用表面粗糙度低的 導體層。相對於此,使用高頻特性優異之表面粗糙度低的導體層之情況下,與薄膜積層時的剝離強度低,導體層之表面粗糙度對高頻特性與剝離強度造成的影響係相反的。於是,要求一種熱塑性液晶聚合物薄膜,該熱塑性液晶聚合物薄膜在與高頻特性優異之表面粗糙度低的導體層積層的情況下,也能夠產生高剝離強度。 When the surface roughness of the conductor layer is increased in order to increase the leveling effect of the conductor layer, high-frequency characteristics are reduced when a circuit board is formed by laminating an insulating layer such as a thermoplastic liquid crystal polymer film, thereby ensuring high-frequency characteristics. From a point of view, it is desirable to use a surface roughness that is low. Conductor layer. On the other hand, when a conductor layer having a low surface roughness excellent in high-frequency characteristics is used, the peel strength at the time of laminating the film is low, and the influence of the surface roughness of the conductor layer on the high-frequency characteristics and the peel strength is opposite. Accordingly, there has been a demand for a thermoplastic liquid crystal polymer film which can produce high peel strength even when a conductor layer having a low surface roughness excellent in high frequency characteristics is laminated.

本發明之第一目的在於提供一種熱塑性液晶聚合物薄膜,該熱塑性液晶聚合物薄膜在與表面粗糙度低的導體層等被黏合體熱壓接之情況下,也具有能夠產生高剝離強度之特定的韌性。 A first object of the present invention is to provide a thermoplastic liquid crystal polymer film which has a specific peeling strength when it is thermally bonded to a conductor layer having a low surface roughness or the like by a bonded body. Resilience.

本發明之第二目的在於提供一種熱塑性液晶聚合物薄膜,該熱塑性液晶聚合物薄膜在與表面粗糙度低的導體層等被黏合體熱壓接之情況下,也具有能夠產生高剝離強度之特定的韌性和特定的楊氏模數。 A second object of the present invention is to provide a thermoplastic liquid crystal polymer film which has a specific peeling strength when it is thermally bonded to a conductor layer having a low surface roughness or the like by a bonded body. Toughness and specific Young's modulus.

本發明之第三目的在於提供一種熱塑性液晶聚合物薄膜,該熱塑性液晶聚合物薄膜在與導體層等被黏合體熱壓接後的韌性下降率也低,並且能夠維持特定的韌性。 A third object of the present invention is to provide a thermoplastic liquid crystal polymer film which has a low rate of toughness reduction after being thermally pressure-bonded to a bonded body such as a conductor layer, and which can maintain a specific toughness.

本發明之第四目的在於提供一種電路基板,該電路基板係將該熱塑性液晶聚合物薄膜與導體層等被黏合體予以壓接而形成。 A fourth object of the present invention is to provide a circuit board which is formed by pressure-bonding a thermoplastic liquid crystal polymer film to a bonded body such as a conductor layer.

本案發明人等為達成上述目的而進行了潛心研究,結果是發現了下述內容,從而完成了本發明。亦即,只要是與導體層熱壓接之熱塑性液晶聚合物薄膜在 熱壓接後的韌性落在特定值之範圍內的熱塑性液晶聚合物薄膜,則即便是在與例如表面粗糙度低之導體層等被黏合體熱壓接的情況下,也能夠既維持良好的高頻特性,又實現高剝離強度。 The inventors of the present invention conducted intensive studies to achieve the above object, and as a result, found the following, and completed the present invention. That is, as long as the thermoplastic liquid crystal polymer film is thermocompression bonded to the conductor layer The thermoplastic liquid crystal polymer film having a toughness after thermal compression bonding falling within a specific value can be maintained even when it is thermocompression bonded to a bonded body such as a conductor layer having a low surface roughness. High frequency characteristics, and high peel strength.

本案發明人等還發現了下述內容,從而完成了本發明。亦即,只要是具有特定的韌性和特定的楊氏模數之熱塑性液晶聚合物薄膜,則即便是在與例如表面粗糙度低之導體層等被黏合體熱壓接在一起之情況下,也能夠既維持良好的高頻特性,又實現更高的剝離強度。 The inventors of the present invention have also found the following, and have completed the present invention. That is, as long as it is a thermoplastic liquid crystal polymer film having a specific toughness and a specific Young's modulus, even when it is thermally bonded to a bonded body such as a conductor layer having a low surface roughness, It can maintain good high frequency characteristics and achieve higher peel strength.

本案發明人等還發現了下述內容,從而完成了本發明。亦即,藉由使用具有特定的韌性之熱塑性液晶聚合物薄膜,並且在該熱塑性液晶聚合物薄膜之韌性不會變化得超出特定範圍之條件下,將導體層等被黏合體與熱塑性液晶聚合物薄膜予以熱壓接,則即便在熱壓接後也可維持高剝離強度。 The inventors of the present invention have also found the following, and have completed the present invention. That is, by using a thermoplastic liquid crystal polymer film having a specific toughness, and the toughness of the conductor layer or the like and the thermoplastic liquid crystal polymer under the condition that the toughness of the thermoplastic liquid crystal polymer film does not change beyond a specific range. When the film is thermocompression bonded, high peel strength can be maintained even after thermocompression bonding.

亦即,本發明的第一型態係一種熱塑性液晶聚合物薄膜,其在將熱塑性液晶聚合物薄膜與導體層熱壓接後,利用以ASTM D882為依據的方法所測量出的熱塑性液晶聚合物薄膜的韌性為30MPa以上100MPa以下。 That is, the first aspect of the present invention is a thermoplastic liquid crystal polymer film which is obtained by thermocompression bonding a thermoplastic liquid crystal polymer film with a conductor layer, using a thermoplastic liquid crystal polymer measured by a method based on ASTM D882. The toughness of the film is 30 MPa or more and 100 MPa or less.

也可以是這樣的熱塑性液晶聚合物薄膜:利用以ASTM D882為依據的方法所測量出的楊氏模數為2.0GPa以上4.0GPa以下。 The thermoplastic liquid crystal polymer film may be a Young's modulus measured by a method based on ASTM D882 of 2.0 GPa or more and 4.0 GPa or less.

也可以是這樣的熱塑性液晶聚合物薄膜:在熱塑性液晶聚合物薄膜之熔點-30℃以下的溫度下,將熱塑性液晶薄膜與導體層等熱壓接後,熱塑性液晶薄膜的 韌性下降率為30%以內。 It may also be a thermoplastic liquid crystal polymer film which is obtained by thermocompression bonding a thermoplastic liquid crystal film with a conductor layer or the like at a temperature of a melting point of the thermoplastic liquid crystal polymer film of -30 ° C or lower, and a thermoplastic liquid crystal film. The rate of toughness reduction is within 30%.

此外,本發明的第二型態係一種將熱塑性液晶聚合物薄膜與導體層積層而成的電路基板。 Further, the second aspect of the present invention is a circuit board in which a thermoplastic liquid crystal polymer film and a conductor layer are laminated.

也可以是這樣的電路基板:利用以ISO4287-1997為依據的方法所測量出的導體層表面之十點平均粗糙度(RzJIS)為3μm以下。 It is also possible to use a circuit board in which the ten-point average roughness (Rz JIS ) of the surface of the conductor layer measured by the method based on ISO4287-1997 is 3 μm or less.

也可以是這樣的電路基板:利用以JIS C5016-1994為依據的方法所測量出的熱塑性液晶聚合物薄膜與和該熱塑性液晶聚合物薄膜黏合的導體層之間的黏合強度為0.6kN/m以上。 It is also possible to use a circuit board in which the bonding strength between the thermoplastic liquid crystal polymer film measured by the method based on JIS C5016-1994 and the conductor layer bonded to the thermoplastic liquid crystal polymer film is 0.6 kN/m or more. .

此外,本發明的第三型態係一種電路基板,其包括熱塑性液晶聚合物薄膜、以及積層在熱塑性液晶聚合物薄膜上的導體層,其中:利用以ASTM D882為依據的方法所測量出的將導體層從熱塑性液晶聚合物薄膜上剝離後的熱塑性液晶聚合物薄膜的韌性為30MPa以上100MPa以下。 Further, a third aspect of the present invention is a circuit substrate comprising a thermoplastic liquid crystal polymer film, and a conductor layer laminated on the thermoplastic liquid crystal polymer film, wherein: the method measured by the method based on ASTM D882 is used The toughness of the thermoplastic liquid crystal polymer film after the conductor layer is peeled off from the thermoplastic liquid crystal polymer film is 30 MPa or more and 100 MPa or less.

由於本發明之熱塑性液晶聚合物薄膜在與能夠維持良好的高頻特性的、表面粗糙度低的導體層(即,利用以ISO4287-1997為依據之方法所測得的導體層表面之十點平均粗糙度(RzJIS)為3μm以下之導體層)熱壓接之情況下,也能夠產生高剝離強度,因此能夠既使導體層維持良好的高頻特性(即,在高頻帶中的低傳輸損失),又以高剝離強度來與導體層積層。 Since the thermoplastic liquid crystal polymer film of the present invention has a conductor layer having a low surface roughness capable of maintaining good high frequency characteristics (that is, a ten point average of the surface of the conductor layer measured by the method based on ISO4287-1997) When the roughness (Rz JIS ) is 3 μm or less, the conductor layer can be thermally bonded, and high peel strength can be generated. Therefore, the conductor layer can maintain good high-frequency characteristics (that is, low transmission loss in a high frequency band). ), and the conductor layer is laminated with high peel strength.

此外,根據本發明之熱塑性液晶聚合物薄膜 ,能夠以高剝離強度將熱塑性液晶聚合物薄膜與能夠維持良好高頻特性之表面粗糙度低的導體層予以積層。因此,能夠在不將與熱塑性液晶聚合物薄膜積層的導體層表面之凹凸形狀、凹凸間的距離等限定在特定形狀、數值等,就將熱塑性液晶聚合物薄膜與導體層積層之情況下,同時滿足良好的高頻特性和高剝離強度,並且能夠做到提高生產性、低成本化。 Further, the thermoplastic liquid crystal polymer film according to the present invention The thermoplastic liquid crystal polymer film can be laminated with a conductor layer having a low surface roughness capable of maintaining good high-frequency characteristics with high peel strength. Therefore, in the case where the thermoplastic liquid crystal polymer film and the conductor layer are laminated without limiting the uneven shape of the surface of the conductor layer laminated on the thermoplastic liquid crystal polymer film, the distance between the unevenness, and the like to a specific shape or numerical value, It satisfies good high-frequency characteristics and high peel strength, and can improve productivity and cost.

由於本發明之熱塑性液晶聚合物薄膜能夠顯著地反映與熱塑性液晶聚合物薄膜壓接之導體層等被黏合體的定準效應,因此能夠在能維持良好高頻特性之導體層的表面粗糙度(亦即,利用以ISO4287-1997為依據之方法所測得的導體層表面之十點平均粗糙度(RzJIS)為3μm以下)之範圍內,將表面粗糙度高而定準效應高的導體層與本發明之熱塑性液晶聚合物薄膜組合而積層,從而產生高剝離強度。 Since the thermoplastic liquid crystal polymer film of the present invention can remarkably reflect the registration effect of the bonded body such as the conductor layer crimped to the thermoplastic liquid crystal polymer film, the surface roughness of the conductor layer capable of maintaining good high frequency characteristics can be achieved ( That is, a conductor layer having a high surface roughness and a high quasi-effect in a range of a ten-point average roughness (Rz JIS ) of the surface of the conductor layer measured by the method based on ISO4287-1997 is 3 μm or less. It is laminated with the thermoplastic liquid crystal polymer film of the present invention to produce a high peel strength.

此外,本發明之熱塑性液晶聚合物薄膜在熱壓接後,其韌性下降率低,即便是在與導體層積層疊後,也能維持高剝離強度。 Further, the thermoplastic liquid crystal polymer film of the present invention has a low rate of toughness reduction after thermocompression bonding, and can maintain high peel strength even after lamination with a conductor.

1‧‧‧熱塑性液晶聚合物薄膜 1‧‧‧ Thermoplastic liquid crystal polymer film

2‧‧‧熱塑性液晶聚合物薄膜 2‧‧‧ Thermoplastic liquid crystal polymer film

3‧‧‧黏合片 3‧‧‧Adhesive sheets

4‧‧‧導體層(銅箔) 4‧‧‧Conductor layer (copper foil)

10‧‧‧第一單元電路基板 10‧‧‧First unit circuit board

20‧‧‧第二單元電路基板 20‧‧‧Second unit circuit board

30‧‧‧積層體(電路基板) 30‧‧‧Laminated body (circuit board)

圖1(a)、(b)係用來說明本發明之一實施方式的電路基板之製程的示意剖視圖,圖1(a)表示積層前的狀態,圖1(b)表示積層後的狀態。 1(a) and 1(b) are schematic cross-sectional views for explaining a process of a circuit board according to an embodiment of the present invention, wherein Fig. 1(a) shows a state before lamination, and Fig. 1(b) shows a state after lamination.

[熱塑性液晶聚合物薄膜] [Thermoplastic liquid crystal polymer film]

在本發明中,熱塑性液晶聚合物薄膜可作為在單面或雙面上形成有導體層之單元電路基板的絕緣性基材層使用,而且還可作為對導體層黏合用的電路基板材料(以下有時稱為黏合性材料)使用。另外,電路基板材料可以是選自黏合片(bonding sheet)和覆蓋膜(coverlay)中的至少一種,較佳的是黏合片。 In the present invention, the thermoplastic liquid crystal polymer film can be used as an insulating base material layer of a unit circuit substrate in which a conductor layer is formed on one or both sides, and can also be used as a circuit board material for bonding a conductor layer (hereinafter Sometimes referred to as adhesive materials). Further, the circuit substrate material may be at least one selected from the group consisting of a bonding sheet and a coverlay, preferably an adhesive sheet.

熱塑性液晶聚合物薄膜係由能夠熔融成形之液晶聚合物形成的。該熱塑性液晶聚合物只要是能夠熔融成形之液晶聚合物即可,其化學結構無特別限制,例如能夠舉出:熱塑性液晶聚酯,或者熱塑性液晶聚酯中導入了醯胺鍵之熱塑性液晶聚酯醯胺等。 The thermoplastic liquid crystal polymer film is formed of a liquid crystal polymer which can be melt-formed. The thermoplastic liquid crystal polymer is not particularly limited as long as it is a liquid crystal polymer which can be melt-molded, and examples thereof include thermoplastic liquid crystal polyester or thermoplastic liquid crystal polyester having a guanamine bond introduced into the thermoplastic liquid crystal polyester. Amidoxime and the like.

此外,熱塑性液晶聚合物亦可為於芳香族聚酯或芳香族聚酯醯胺中進一步導入了醯亞胺鍵、碳酸酯鍵、碳二亞胺鍵、異三聚氰酸酯鍵等源自異氰酸酯之鍵結等的聚合物。 Further, the thermoplastic liquid crystal polymer may further be derived from an aromatic polyester or an aromatic polyester decylamine, such as a quinone bond, a carbonate bond, a carbodiimide bond, or an isomeric cyanate bond. A polymer such as a bond of an isocyanate.

作為本發明所使用的熱塑性液晶聚合物之具體例,能夠舉出由分類成以下所例示的(1)至(4)的化合物及其衍生物所衍生之周知的熱塑性液晶聚酯及熱塑性液晶聚酯醯胺。然而,為了形成能夠形成光學各向異性之熔融層的聚合物,各種原料化合物的組合當然有其適當的範圍。 Specific examples of the thermoplastic liquid crystal polymer used in the present invention include well-known thermoplastic liquid crystal polyesters and thermoplastic liquid crystal polymers derived from the compounds (1) to (4) classified as exemplified below and derivatives thereof. Ester amide. However, in order to form a polymer capable of forming a molten layer of optical anisotropy, a combination of various raw material compounds certainly has an appropriate range.

(1)芳香族或脂肪族二羥基化合物(代表例參照表1) (1) Aromatic or aliphatic dihydroxy compounds (for representative examples, see Table 1)

[表1] [Table 1]

(2)芳香族或脂肪族二羧酸(代表例參照表2) (2) Aromatic or aliphatic dicarboxylic acids (for representative examples, see Table 2)

(3)芳香族羥基羧酸(代表例參照表3) (3) Aromatic hydroxycarboxylic acid (for representative examples, see Table 3)

(4)芳香族雙胺、芳香族羥基胺或芳香族胺基羧酸(代表例參照表4) (4) Aromatic bisamine, aromatic hydroxylamine or aromatic aminocarboxylic acid (for representative examples, see Table 4)

作為由該等原料化合物所得的液晶聚合物之代表例,可以舉出具有表5和6中所示的結構單元的共聚物。 Representative examples of the liquid crystal polymer obtained from the raw material compounds include copolymers having the structural units shown in Tables 5 and 6.

該等共聚物中,較佳為至少包含對羥苯甲酸及/或6-羥基-2-萘甲酸作為重複單元的聚合物,特佳為下述(i)、(ii)之聚合物。(i)包含對羥苯甲酸與6-羥基-2-萘甲酸之重複單元的聚合物。(ii)包含下述成分之重複單元的聚合物:選自由對羥苯甲酸及6-羥基-2-萘甲酸組成之群組中的至少一種的芳香族羥基羧酸;選自由4,4’-二羥基聯苯及氫醌組成之群組中的至少一種的芳香族二醇;選自由對苯二甲酸、間苯二甲酸及2,6-萘二羧酸組成之群組中的至少一種的芳香族二羧酸。 Among these copolymers, a polymer containing at least p-hydroxybenzoic acid and/or 6-hydroxy-2-naphthoic acid as a repeating unit is preferred, and polymers of the following (i) and (ii) are particularly preferred. (i) a polymer comprising repeating units of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid. (ii) a polymer comprising a repeating unit of the following: an aromatic hydroxycarboxylic acid selected from at least one selected from the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid; selected from 4, 4' An aromatic diol of at least one selected from the group consisting of dihydroxybiphenyl and hydroquinone; at least one selected from the group consisting of terephthalic acid, isophthalic acid, and 2,6-naphthalenedicarboxylic acid Aromatic dicarboxylic acid.

例如,就(i)之聚合物來說,在熱塑性液晶聚 合物至少包含對羥苯甲酸與6-羥基-2-萘甲酸之重複單元的情況下,在液晶聚合物中,重複單元(A)之對羥苯甲酸與重複單元(B)之6-羥基-2-萘甲酸的莫耳比(A)/(B)較佳為(A)/(B)=10/90~90/10左右,更佳為(A)/(B)=50/50~85/15左右,尤佳為(A)/(B)=60/40~80/20左右。 For example, in the case of (i) polymers, in thermoplastic liquid crystal polymerization In the case where the compound contains at least a repeating unit of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, in the liquid crystal polymer, repeating the 6-hydroxyl group of the p-hydroxybenzoic acid of the unit (A) and the repeating unit (B) The molar ratio (A)/(B) of -2-naphthoic acid is preferably (A)/(B)=10/90 to 90/10, more preferably (A)/(B)=50/50. ~85/15 or so, especially good for (A) / (B) = 60/40 ~ 80 / 20 or so.

此外,就(ii)之聚合物來說,選自由對羥苯甲酸及6-羥基-2-萘甲酸組成之群組中的至少一種的芳香族羥基羧酸(C);選自由4,4’-二羥基聯苯及氫醌組成之群組中的至少一種的芳香族二醇(D);以及選自由對苯二甲酸、間苯二甲酸及2,6-萘二羧酸組成之群組中的至少一種的芳香族二羧酸(E)在液晶聚合物中的各重複單元之莫耳比可以是芳香族羥基羧酸(C):該芳香族二醇(D):該芳香族二羧酸(E)=30~80:35~10:35~10左右,更佳為(C):(D):(E)=35~75:32.5~12.5:32.5~12.5左右,尤佳為(C):(D):(E)=40~70:30~15:30~15左右。 Further, in the case of the polymer of (ii), an aromatic hydroxycarboxylic acid (C) selected from at least one of the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid; selected from 4, 4 An aromatic diol (D) of at least one of the group consisting of '-dihydroxybiphenyl and hydroquinone; and a group selected from the group consisting of terephthalic acid, isophthalic acid and 2,6-naphthalenedicarboxylic acid The molar ratio of each of the repeating units of the aromatic dicarboxylic acid (E) in the liquid crystal polymer of at least one of the groups may be an aromatic hydroxycarboxylic acid (C): the aromatic diol (D): the aromatic Dicarboxylic acid (E) = 30 ~ 80: 35 ~ 10: 35 ~ 10 or so, more preferably (C): (D): (E) = 35 ~ 75: 32.5 ~ 12.5: 32.5 ~ 12.5 or so, especially good For (C): (D): (E) = 40~70:30~15:30~15.

此外,源自芳香族二羧酸之重複結構單元與源自芳香族二醇之重複結構單元的莫耳比,較佳為(D)/(E)=95/100~100/95。若偏離該範圍,就會出現聚合度不上升而機械強度降低的傾向 Further, the molar ratio of the repeating structural unit derived from the aromatic dicarboxylic acid to the repeating structural unit derived from the aromatic diol is preferably (D) / (E) = 95 / 100 - 100 / 95. If it deviates from this range, there is a tendency that the degree of polymerization does not rise and the mechanical strength decreases.

另外,本發明中提及之光學各向異性的熔融層(熔融時之光學各向異性)例如能夠藉由下述方式來認定,即:將試樣載放於加熱載台,在氮氣環境下升溫加熱,觀察試樣之穿透光。 Further, the optically anisotropic molten layer (optical anisotropy at the time of melting) mentioned in the present invention can be confirmed, for example, by placing a sample on a heating stage under a nitrogen atmosphere. Heating was performed at elevated temperature, and the transmitted light of the sample was observed.

作為熱塑性液晶聚合物,較佳為其熔點(以下稱為Tm0)落在260~360℃之範圍內者,更佳為Tm0在270 ~350℃者。另外,Tm0能夠藉由利用示差掃瞄熱量計(島津製作所(股)DSC)來測量主吸熱峰出現的溫度而求得。 The thermoplastic liquid crystal polymer preferably has a melting point (hereinafter referred to as Tm 0 ) falling within the range of 260 to 360 ° C, and more preferably a Tm 0 of 270 to 350 ° C. Further, Tm 0 can be obtained by measuring the temperature at which the main endothermic peak appears by using a differential scanning calorimeter (Shimadzu Corporation DSC).

在不損及本發明之效果的範圍內,可以在熱塑性液晶聚合物中添加聚對苯二甲酸乙二酯、改性聚對苯二甲酸乙二酯、聚烯烴、聚碳酸酯、聚芳酯、聚醯胺、聚苯硫醚、聚醚醚酮、氟樹脂等熱塑性聚合物、各種添加劑,也可以因應需求添加填充劑。 Polyethylene terephthalate, modified polyethylene terephthalate, polyolefin, polycarbonate, polyarylate may be added to the thermoplastic liquid crystal polymer within a range not impairing the effects of the present invention. Polyamides, polyphenylene sulfides, polyetheretherketones, fluororesins and other thermoplastic polymers, various additives, and fillers may be added as needed.

本發明所使用之熱塑性液晶聚合物薄膜係可將熱塑性液晶聚合物擠製成形而得到。只要能夠控制熱塑性液晶聚合物之剛性棒狀分子的方向,則可使用任何擠製成形法,以周知的T型模頭法、層疊體拉伸法、吹塑(inflation)法等在工業生產上較為有利。特別是吹塑法、層疊體拉伸法,不僅可對薄膜的機械加工方向(以下簡稱為MD方向)施加應力,還可對與之垂直的方向(以下簡稱為TD方向)施加應力,因此能夠得到控制了MD方向與TD方向之介電特性的薄膜。 The thermoplastic liquid crystal polymer film used in the present invention can be obtained by extruding a thermoplastic liquid crystal polymer. Any extrusion molding method can be used as long as it can control the direction of the rigid rod-shaped molecules of the thermoplastic liquid crystal polymer, and is known in the industrial production by a well-known T-die method, laminate stretching method, inflation method, and the like. More favorable. In particular, the blow molding method and the laminate stretching method can apply stress not only to the machine direction of the film (hereinafter simply referred to as the MD direction) but also to the direction perpendicular thereto (hereinafter referred to as the TD direction). A film that controls the dielectric properties of the MD direction and the TD direction is obtained.

在擠製成形中,為了控制配向,較佳的是伴隨著進行拉伸處理,例如,在利用T型模頭法進行的擠製成形中,可以是:不是僅在薄膜的MD方向上,而是在MD方向與TD方向這兩個方向上同時對從T型模頭擠製出之熔融體片材進行拉伸;或者,先在MD方向上對從T型模頭擠製出之熔融體片材進行拉伸,接著在TD方向上進行拉伸。 In the extrusion molding, in order to control the alignment, it is preferred to carry out the stretching treatment, for example, in the extrusion molding by the T-die method, it may be: not only in the MD direction of the film, but The molten body sheet extruded from the T-die is simultaneously stretched in both the MD direction and the TD direction; or, the melt extruded from the T-die is first applied in the MD direction. The sheet is stretched and then stretched in the TD direction.

此外,利用吹塑法進行之擠製成形中,可以以規定的拉延比(相當於MD方向的拉伸倍率)及吹漲比( 相當於TD方向的拉伸倍率),對從環狀模頭(ring die)熔融擠製出之圓筒狀片材進行拉伸。 Further, in the extrusion molding by the blow molding method, the predetermined drawing ratio (equivalent to the stretching ratio in the MD direction) and the blowing ratio ( It corresponds to the stretching ratio in the TD direction), and the cylindrical sheet which is melt-extruded from the ring die is stretched.

就這種擠製成形的拉伸倍率來說,作為MD方向上的拉伸倍率(或拉延比),例如可為1.0~10左右,較佳為1.2~7左右,更佳為1.3~7左右。此外,作為TD方向上的拉伸倍率(或吹漲比),例如可為1.5~20左右,較佳為2~15左右,更佳為2.5~14左右。 The stretching ratio in the MD direction (or the draw ratio) may be, for example, about 1.0 to 10, preferably about 1.2 to 7, and more preferably 1.3 to 7. about. Further, the stretching ratio (or the blowing ratio) in the TD direction may be, for example, about 1.5 to 20, preferably about 2 to 15, more preferably about 2.5 to 14.

MD方向與TD方向上的各自的拉伸倍率的比(TD方向/MD方向)例如可為2.6以下,較佳為0.4~2.5左右。 The ratio (TD direction/MD direction) of the respective stretching ratios in the MD direction and the TD direction may be, for example, 2.6 or less, preferably about 0.4 to 2.5.

此外,可以在擠製成形之後,因應需求對熱塑性液晶聚合物薄膜進行拉伸。拉伸方法本身是周知的方法,可採用雙軸拉伸、單軸拉伸中的任一種,但從更易於控制分子配向度的觀點來看,較佳為採用雙軸拉伸。此外,可使用周知的單軸拉伸機、同時雙軸拉伸機、逐次雙軸拉伸機等來進行拉伸。 Further, the thermoplastic liquid crystal polymer film may be stretched in response to the demand after extrusion molding. The stretching method itself is a well-known method, and any of biaxial stretching and uniaxial stretching may be employed, but from the viewpoint of easier control of molecular orientation, biaxial stretching is preferred. Further, the stretching can be carried out using a well-known uniaxial stretching machine, a simultaneous biaxial stretching machine, a sequential biaxial stretching machine, or the like.

此外,可因應需求,進行周知或慣用的熱處理來調整熱塑性液晶聚合物薄膜之熔點及/或熱膨脹係數。可因應目的適當地設定熱處理條件,例如,可藉由在液晶聚合物的熔點(Tm0)-10℃以上(例如Tm0-10~Tm0+30℃左右,較佳為Tm0~Tm0+20℃左右)之溫度下加熱幾小時,使熱塑性液晶聚合物薄膜的熔點(Tm)上升。 Further, a known or conventional heat treatment may be performed to adjust the melting point and/or the coefficient of thermal expansion of the thermoplastic liquid crystal polymer film. The heat treatment conditions may be appropriately set depending on the purpose, for example, by a melting point (Tm 0 ) of the liquid crystal polymer of -10 ° C or more (for example, Tm 0 -10 to Tm 0 + 30 ° C or so, preferably Tm 0 to Tm 0 Heating at a temperature of about +20 ° C for several hours increases the melting point (Tm) of the thermoplastic liquid crystal polymer film.

以此方式獲得之本發明之熱塑性液晶聚合物薄膜具有優異的介電特性、低吸濕性等,故適合用作電路基板材料。 The thermoplastic liquid crystal polymer film of the present invention obtained in this manner has excellent dielectric properties, low hygroscopicity, and the like, and is therefore suitable for use as a circuit substrate material.

此外,熱塑性液晶聚合物薄膜起因於其剛性結構,一般而言在低剪切區域的熔融黏度較高,例如在300℃下的熱塑性液晶聚合物薄膜之熔融黏度(剪切速度1,000秒-1)可以為100Pa‧s以上,較佳可以為200~100,000Pa‧s左右(例如150~100,000Pa‧s左右),更佳可以為200~10,000Pa‧s左右。另外,熔融黏度能夠使用黏彈性流變儀(例如TA Instrucment Japan製的AR2000),在升溫速度3℃/分鐘、頻率1Hz、應變0.1%、法線應力5N之條件下來測量。 In addition, the thermoplastic liquid crystal polymer film is caused by its rigid structure, and generally has a high melt viscosity in a low shear region, for example, a melt viscosity of a thermoplastic liquid crystal polymer film at 300 ° C (shear speed of 1,000 sec -1 ) It may be 100 Pa ‧ or more, preferably about 200 to 100,000 Pa ‧ (for example, about 150 to 100,000 Pa ‧ s), and more preferably about 200 to 10,000 Pa ‧ s. In addition, the melt viscosity can be measured using a viscoelastic rheometer (for example, AR2000 manufactured by TA Instrucment Japan) at a temperature increase rate of 3 ° C / min, a frequency of 1 Hz, a strain of 0.1%, and a normal stress of 5 N.

從得到薄膜所期望的耐熱性及加工性之目的來說,熱塑性液晶聚合物薄膜的熔點(Tm)可選自200~400℃左右之範圍內,較佳為250~360℃左右,更佳為260~340℃左右。另外,薄膜的熔點能夠藉由使用示差掃瞄熱量計來觀察薄膜的熱行為而得到。亦即,只要將下述吸熱峰之位置記錄為薄膜的熔點即可,即:以20℃/分鐘之速度使試驗用薄膜升溫並完全熔融後,以50℃/分鐘之速度使熔融物急冷至50℃,再以20℃/分鐘之速度升溫後出現的吸熱峰。 The melting point (Tm) of the thermoplastic liquid crystal polymer film may be selected from the range of about 200 to 400 ° C, preferably about 250 to 360 ° C, more preferably from the viewpoint of obtaining heat resistance and processability desired for the film. 260~340 °C or so. In addition, the melting point of the film can be obtained by observing the thermal behavior of the film using a differential scanning calorimeter. That is, the position of the endothermic peak described below may be recorded as the melting point of the film, that is, the test film is heated and completely melted at a rate of 20 ° C /min, and then the melt is rapidly cooled to 50 ° C / min. °C, the endothermic peak that appears after heating at a rate of 20 ° C / min.

本發明中所使用之熱塑性液晶聚合物薄膜可為任意之厚度,其中也包含厚度為5mm以下之板狀或片狀的熱塑性液晶聚合物薄膜。惟,使用在高頻傳輸線路的情況下,由於厚度越厚則傳輸損失變得越小,故較佳的是儘可能地使厚度變厚。在使用熱塑性液晶聚合物薄膜作為電絕緣層之情況下,該薄膜的膜厚較佳為落在10~500μm之範圍內,更佳為落在15~200μm之範圍內。在 薄膜之厚度過薄的情況下,薄膜之剛性及強度會變小,故也可以使用將薄膜膜厚10~200μm之範圍內的薄膜積層以得到任意厚度的方法。 The thermoplastic liquid crystal polymer film used in the present invention may have any thickness, and also includes a plate-like or sheet-shaped thermoplastic liquid crystal polymer film having a thickness of 5 mm or less. However, in the case of using a high-frequency transmission line, since the transmission loss becomes smaller as the thickness is thicker, it is preferable to make the thickness as thick as possible. In the case where a thermoplastic liquid crystal polymer film is used as the electrically insulating layer, the film thickness of the film preferably falls within the range of 10 to 500 μm, more preferably falls within the range of 15 to 200 μm. in When the thickness of the film is too thin, the rigidity and strength of the film are reduced. Therefore, a method of laminating a film in a film thickness of 10 to 200 μm to obtain an arbitrary thickness can be used.

在本發明中,重要的是:要與導體層進行熱壓接之熱塑性液晶聚合物薄膜之利用以ASTM D882為依據之方法所測量出的在與導體層熱壓接後的韌性為30MPa以上100MPa以下,較佳可以為35MPa以上100MPa以下,更佳可以為50MPa以上100MPa以下,尤佳可以為60MPa以上100MPa以下,特佳可以為70MPa以上90MPa以下。藉由使用與導體層熱壓接後的韌性落在該範圍內之熱塑性液晶聚合物薄膜,則能夠提高與導體層等被黏合體積層時的剝離強度,即使在熱壓接後也能夠維持高剝離強度。 In the present invention, it is important that the thermoplastic liquid crystal polymer film to be thermocompression bonded to the conductor layer has a toughness of 30 MPa or more and 100 MPa after thermocompression bonding with the conductor layer measured by the method based on ASTM D882. Hereinafter, it is preferably 35 MPa or more and 100 MPa or less, more preferably 50 MPa or more and 100 MPa or less, and particularly preferably 60 MPa or more and 100 MPa or less, and particularly preferably 70 MPa or more and 90 MPa or less. By using a thermoplastic liquid crystal polymer film having a toughness within the above range after thermocompression bonding with the conductor layer, the peel strength at the time of bonding the volume layer such as the conductor layer can be improved, and the strength can be maintained even after thermocompression bonding. Peel strength.

就本發明之熱塑性液晶聚合物薄膜來說,即使在將該薄膜與銅箔疊合起來,使用真空熱壓裝置,將壓接溫度(加熱板的溫度)設定在該薄膜之熔點Tm-35℃,在4MPa之壓力下,進行了10分鐘的熱壓接後,將銅箔剝離後的該薄膜之韌性也會在30MPa以上100MPa以下。特別的是下述熱塑性液晶聚合物薄膜是較佳的,即:即使在上述壓接條件下,將壓接溫度設定在Tm-35℃以上Tm-10℃以下之範圍中的任一溫度的情況下,韌性也會成為30MPa以上100MPa以下。 In the thermoplastic liquid crystal polymer film of the present invention, even if the film is laminated with the copper foil, the crimping temperature (temperature of the heating plate) is set at the melting point of the film Tm-35 ° C using a vacuum hot pressing device. After 10 minutes of thermocompression bonding under a pressure of 4 MPa, the toughness of the film after peeling off the copper foil was also 30 MPa or more and 100 MPa or less. In particular, the following thermoplastic liquid crystal polymer film is preferable in which the crimping temperature is set to any temperature in the range of Tm - 35 ° C or more and Tm - 10 ° C or less under the above-mentioned pressure bonding conditions. Next, the toughness will be 30 MPa or more and 100 MPa or less.

此外,由於韌性越高的薄膜就越能顯著地反映出導體層之定準效應而產生高剝離強度,因此,能夠藉由將韌性高的薄膜與表面粗糙度大而定準效應高的導 體層組合起來進行壓接,來獲得更高的剝離強度。 In addition, since the film having higher toughness can significantly reflect the quasi-effect of the conductor layer and has high peel strength, it is possible to form a guide having a high degree of toughness and a high surface roughness. The body layers are combined for crimping to achieve higher peel strength.

一般而言,導體層之表面粗糙度越高,定準效應就變得越高,但傳輸損失會因為表面凹凸變大所引起的表皮效應而變大。能夠藉由在不造成傳輸損失變大之範圍(例如利用依據ISO4287-1997之方法測得的導體層表面之十點平均粗糙度(RzJIS)為3μm以下)內提高導體層表面粗糙度,從而既維持良好的高頻特性,又實現高剝離強度。就韌性小於30MPa之熱塑性液晶聚合物薄膜來說,在與於不造成傳輸損失變大之範圍內提高了表面粗糙度之導體層進行壓接之情況下,無法獲得較大的剝離強度,由於有必要進行特殊加工,因此製程繁瑣,製造條件受到限制,該特殊加工即:限定導體層表面之凹凸形狀;將凹凸間之距離限制在特定範圍內等。 In general, the higher the surface roughness of the conductor layer, the higher the registration effect becomes, but the transmission loss becomes large due to the skin effect caused by the surface unevenness becoming large. The surface roughness of the conductor layer can be improved by not increasing the transmission loss (for example, the ten-point average roughness (Rz JIS ) of the surface of the conductor layer measured by the method according to ISO 4287-1997 is 3 μm or less) It maintains good high frequency characteristics and achieves high peel strength. In the case of a thermoplastic liquid crystal polymer film having a toughness of less than 30 MPa, a large peel strength cannot be obtained in the case of crimping a conductor layer having improved surface roughness within a range in which transmission loss does not become large, due to Special processing is necessary, so the process is cumbersome and the manufacturing conditions are limited. The special processing is to define the uneven shape on the surface of the conductor layer; to limit the distance between the bumps to a specific range.

關於熱塑性液晶聚合物薄膜那樣的樹脂薄膜與導體層那樣的被黏合體之積層體,在將樹脂薄膜與被黏合體剝離開之情況下,可以認為剝離的機制有界面剝離和內聚破壞這兩種機制。在積層體之剝離強度強達某種程度之情況下,剝離之機制主要係以內聚破壞來引起。可以認為:若內聚破壞時的樹脂薄膜的韌性較強,則剝離時樹脂薄膜不易被破壞,故被黏合體與樹脂薄膜之剝離強度變強。 When a resin film such as a thermoplastic liquid crystal polymer film and a layered body such as a conductor layer are peeled off from the adherend, it is considered that the mechanism of peeling is interfacial peeling and cohesive failure. Kind of mechanism. In the case where the peel strength of the laminate is strong to some extent, the mechanism of the peeling is mainly caused by cohesive failure. When the toughness of the resin film at the time of cohesive failure is strong, the resin film is not easily broken at the time of peeling, so that the peel strength between the bonded body and the resin film is strong.

提高熱塑性液晶聚合物薄膜之韌性的方法沒有特別的限制,例如可以藉由進行熱處理來提高薄膜之韌性。例如,能夠藉由控制熱處理時的熱處理溫度、熱處理時間、升溫速度等來調整賦予薄膜之韌性,例如有 下述傾向:若在特定之升溫速度條件下提高熱處理溫度,則賦予熱塑性液晶聚合物薄膜之韌性會提高,另外,若增長熱處理時間,則賦予熱塑性液晶聚合物薄膜之韌性也會提高。 The method for increasing the toughness of the thermoplastic liquid crystal polymer film is not particularly limited, and for example, the heat resistance of the film can be improved by heat treatment. For example, the toughness imparted to the film can be adjusted by controlling the heat treatment temperature, the heat treatment time, the temperature increase rate, and the like at the time of heat treatment, for example, There is a tendency that the toughness is increased in the thermoplastic liquid crystal polymer film when the heat treatment temperature is increased under a specific temperature increase rate, and the toughness imparted to the thermoplastic liquid crystal polymer film is also increased when the heat treatment time is increased.

熱處理溫度這一條件沒有特別的限制,例如可以是熱塑性液晶聚合物薄膜之熔點(Tm)-30℃以上(例如,Tm-20℃~Tm+10℃左右,較佳為Tm~Tm+10℃左右)。 The heat treatment temperature is not particularly limited. For example, the thermoplastic liquid crystal polymer film may have a melting point (Tm) of -30 ° C or higher (for example, Tm-20 ° C to Tm + 10 ° C or so, preferably Tm to Tm + 10 ° C). about).

熱處理時間這一條件沒有特別的限制,例如可以是1小時~20小時左右(例如,5小時~15小時左右,較佳為6小時~10小時左右)。 The condition of the heat treatment time is not particularly limited, and may be, for example, about 1 hour to 20 hours (for example, about 5 hours to 15 hours, preferably about 6 hours to 10 hours).

從提高熱塑性液晶聚合物薄膜之韌性的觀點來看,升溫速度這一條件較佳為例如1℃/分鐘~6℃/分鐘,更佳為1℃/分鐘~3℃/分鐘,若考慮生產性,則特佳為2℃/分鐘。 From the viewpoint of improving the toughness of the thermoplastic liquid crystal polymer film, the condition of the temperature increase rate is preferably, for example, 1 ° C / min to 6 ° C / min, more preferably 1 ° C / min to 3 ° C / min, if productivity is considered , especially good at 2 ° C / min.

例如,使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模(inflation die)進行擠製,從而製出熔點280℃、厚度50μm之熱塑性液晶聚合物薄膜,藉由在氮氣環境下的烤箱中,對該熱塑性液晶聚合物薄膜進行升溫速度2℃/min左右、熱處理溫度280℃左右、熱處理時間6小時左右之熱處理,能獲得韌性為80MPa左右的熱塑性液晶聚合物薄膜,而對該熱塑性液晶聚合物薄膜進行升溫速度4℃/min左右、熱處理溫度 280℃左右、熱處理時間5小時左右之熱處理,則能夠獲得韌性為70MPa左右的熱塑性液晶聚合物薄膜。 For example, a thermotropic liquid crystal polyester composed of 6-hydroxy-2-naphthoic acid unit 27 mol% and p-hydroxybenzoic acid unit 73 mol% is heated and mixed at 280 to 300 ° C using a uniaxial extruder. Refining, and then extruding with an injection die having a diameter of 40 mm and a slit spacing of 0.6 mm, thereby producing a thermoplastic liquid crystal polymer film having a melting point of 280 ° C and a thickness of 50 μm, in an oven under a nitrogen atmosphere, The thermoplastic liquid crystal polymer film is subjected to a heat treatment at a temperature increase rate of about 2 ° C / min, a heat treatment temperature of about 280 ° C, and a heat treatment time of about 6 hours, thereby obtaining a thermoplastic liquid crystal polymer film having a toughness of about 80 MPa, and the thermoplastic liquid crystal polymer is obtained. The film is heated at a temperature of about 4 ° C / min, and the heat treatment temperature is A heat treatment of about 280 ° C and a heat treatment time of about 5 hours can obtain a thermoplastic liquid crystal polymer film having a toughness of about 70 MPa.

例如,可以藉由上述那樣的熱處理等來提高熱塑性液晶聚合物薄膜之韌性,並且藉由將熱塑性液晶聚合物薄膜之韌性設定在較高的值,則即使是在將該薄膜與導體層熱壓接後,也能夠使該熱塑性液晶聚合物薄膜之韌性維持在30MPa以上100MPa以下,從而即使在進行了熱壓接之後也能夠維持良好的剝離強度。 For example, the toughness of the thermoplastic liquid crystal polymer film can be improved by the heat treatment or the like as described above, and by setting the toughness of the thermoplastic liquid crystal polymer film to a high value, even if the film and the conductor layer are hot pressed After the connection, the toughness of the thermoplastic liquid crystal polymer film can be maintained at 30 MPa or more and 100 MPa or less, and good peel strength can be maintained even after thermocompression bonding.

為了進一步提高將熱塑性液晶聚合物薄膜與導體層熱壓接時的剝離強度,利用以ASTM D882規格為依據的方法測量出的熱塑性液晶聚合物薄膜之楊氏模數較佳為2.0GPa以上4.0GPa以下,更佳為2.5GPa以上4GPa以下,尤佳為2.5GPa以上3.5GPa以下。 In order to further improve the peel strength when the thermoplastic liquid crystal polymer film and the conductor layer are thermocompression bonded, the Young's modulus of the thermoplastic liquid crystal polymer film measured by the method based on the ASTM D882 specification is preferably 2.0 GPa or more and 4.0 GPa. Hereinafter, it is more preferably 2.5 GPa or more and 4 GPa or less, and particularly preferably 2.5 GPa or more and 3.5 GPa or less.

調整熱塑性液晶聚合物薄膜之楊氏模數的方法沒有特別的限制,例如可以藉由熱處理來調節楊氏模數。 The method of adjusting the Young's modulus of the thermoplastic liquid crystal polymer film is not particularly limited, and for example, the Young's modulus can be adjusted by heat treatment.

例如,存在若提高熱處理溫度,則賦予熱塑性液晶聚合物薄膜之楊氏模數就會降低之傾向。例如,使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模進行擠製,從而製出熔點280℃、厚度50μm之熱塑性液晶聚合物薄膜,藉由在氮氣環境下的烤箱中,對該熱塑性液晶聚合物薄膜進行升溫速度2℃/min左右、熱處理溫度280℃左右、熱處理時間6小時左右之熱處 理,能獲得韌性為80MPa左右、楊氏模數為3.5GPa左右的熱塑性液晶聚合物薄膜。 For example, when the heat treatment temperature is increased, the Young's modulus of the thermoplastic liquid crystal polymer film is lowered. For example, a thermotropic liquid crystal polyester composed of 6-hydroxy-2-naphthoic acid unit 27 mol% and p-hydroxybenzoic acid unit 73 mol% is heated and mixed at 280 to 300 ° C using a uniaxial extruder. Refining, and then extruding with a blow mold having a diameter of 40 mm and a slit interval of 0.6 mm, thereby producing a thermoplastic liquid crystal polymer film having a melting point of 280 ° C and a thickness of 50 μm, which is obtained by using a thermoplastic liquid crystal in an oven under a nitrogen atmosphere. The polymer film is heated at a temperature of about 2 ° C / min, a heat treatment temperature of about 280 ° C, and a heat treatment time of about 6 hours. A thermoplastic liquid crystal polymer film having a toughness of about 80 MPa and a Young's modulus of about 3.5 GPa can be obtained.

此外,存在若降低熱處理溫度,則楊氏模數就提高的傾向,例如,使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模進行擠製,從而製出熔點280℃、厚度50μm之熱塑性液晶聚合物薄膜,藉由在氮氣環境下的烤箱中,對該熱塑性液晶聚合物薄膜進行升溫速度2℃/min左右、熱處理溫度260℃左右、熱處理時間10小時左右之熱處理,能獲得韌性為80MPa左右、楊氏模數為5.0GPa左右的熱塑性液晶聚合物薄膜。 Further, if the heat treatment temperature is lowered, the Young's modulus tends to increase. For example, using a uniaxial extruder, the hydroxy group of 6-hydroxy-2-naphthoic acid unit is at 280 to 300 ° C. The thermotropic liquid crystal polyester composed of hydroxybenzoic acid unit 73 mol% was heated and kneaded, and then extruded by a blow mold having a diameter of 40 mm and a slit interval of 0.6 mm to prepare a thermoplastic liquid crystal having a melting point of 280 ° C and a thickness of 50 μm. The polymer film is heat-treated at a temperature of about 2 ° C / min, a heat treatment temperature of about 260 ° C, and a heat treatment time of about 10 hours in an oven under a nitrogen atmosphere to obtain a toughness of about 80 MPa. A thermoplastic liquid crystal polymer film having a Young's modulus of about 5.0 GPa.

存在下述傾向:對熱塑性液晶聚合物薄膜進行的熱處理之溫度越高,薄膜之韌性就變得越高;熱處理時間越長,薄膜之韌性就變得越高。為此,在要對熱塑性液晶聚合物薄膜賦予特定的韌性之際,可以提高熱處理溫度並縮短熱處理時間,還可以降低熱處理溫度並增長熱處理時間。熱塑性液晶聚合物薄膜之楊氏模數存在受到例如熱處理時間之影響的傾向,有時候若熱處理時間較長,楊氏模數就變高,因此可以顧及熱塑性液晶聚合物薄膜之韌性與楊氏模數的平衡來對熱處理溫度和熱處理時間進行調整,從而將韌性與彈性模數設定在特定範圍內。例如,可以藉由根據楊氏模數在特定範圍內的熱處理時間條件,適當地設定熱處理溫度,從而對熱塑性液晶聚合物薄膜賦予特定範圍之韌性及楊氏模數。 There is a tendency that the higher the temperature of the heat treatment of the thermoplastic liquid crystal polymer film, the higher the toughness of the film; the longer the heat treatment time, the higher the toughness of the film. For this reason, when a specific toughness is imparted to the thermoplastic liquid crystal polymer film, the heat treatment temperature can be increased and the heat treatment time can be shortened, and the heat treatment temperature can be lowered and the heat treatment time can be increased. The Young's modulus of the thermoplastic liquid crystal polymer film tends to be affected by, for example, heat treatment time. Sometimes, if the heat treatment time is long, the Young's modulus becomes high, so that the toughness and Young's mode of the thermoplastic liquid crystal polymer film can be considered. The balance of the number is used to adjust the heat treatment temperature and the heat treatment time to set the toughness and the modulus of elasticity within a specific range. For example, the thermoplastic liquid crystal polymer film can be given a specific range of toughness and Young's modulus by appropriately setting the heat treatment temperature according to the heat treatment time condition within a specific range of the Young's modulus.

在熱塑性液晶聚合物薄膜之韌性落在30MPa以上100MPa以下之範圍內且熱塑性液晶聚合物薄膜之楊氏模數落在2.0GPa以上4.0GPa以下之範圍內的情況下,存在薄膜之韌性越高、彈性模數越低,在與導體層等被黏合體壓接之際的剝離強度就變得越高的傾向。從進一步提高剝離強度之觀點來看,在藉由熱塑性液晶聚合物薄膜之熱處理等來調整薄膜之韌性和楊氏模數之際,若以韌性提高、楊氏模數降低之方式進行調整就更為理想。 When the toughness of the thermoplastic liquid crystal polymer film falls within the range of 30 MPa or more and 100 MPa or less and the Young's modulus of the thermoplastic liquid crystal polymer film falls within the range of 2.0 GPa or more and 4.0 GPa or less, the toughness of the film is higher, The lower the modulus of elasticity, the higher the peel strength at the time of pressure contact with a bonded body such as a conductor layer. From the viewpoint of further improving the peeling strength, when the toughness and the Young's modulus of the film are adjusted by heat treatment of the thermoplastic liquid crystal polymer film or the like, it is more preferable to adjust the toughness and the Young's modulus. Ideal.

[導體層] [conductor layer]

導體層係由至少具有導電性之金屬形成,在該導體層上利用周知的電路加工方法形成有電路。作為在由熱塑性液晶聚合物薄膜構成的絕緣性基材上形成導體層之方法,能夠使用周知的方法,例如,可以蒸鍍上金屬層,也可以藉由無電電鍍、電鍍來形成金屬層。此外,也可以利用熱壓接的方式將金屬箔(例如,銅箔)壓接到熱塑性液晶聚合物薄膜之表面上。 The conductor layer is formed of a metal having at least conductivity, and a circuit is formed on the conductor layer by a well-known circuit processing method. As a method of forming a conductor layer on an insulating base material made of a thermoplastic liquid crystal polymer film, a well-known method can be used, for example, a metal layer can be vapor-deposited, or a metal layer can be formed by electroless plating or electroplating. Further, a metal foil (for example, a copper foil) may be crimped onto the surface of the thermoplastic liquid crystal polymer film by thermocompression bonding.

構成導體層之金屬箔係以用於電連接之金屬箔為佳,除了銅箔外,還能夠舉出金、銀、鎳、鋁等各種金屬箔,也可以包括實質上(例如,98質量%以上)由該等金屬構成之合金箔。 The metal foil constituting the conductor layer is preferably a metal foil for electrical connection. In addition to the copper foil, various metal foils such as gold, silver, nickel, and aluminum may be used, and may include substantially (for example, 98% by mass). The above) is an alloy foil composed of the metals.

該等金屬箔中,較佳為使用銅箔。銅箔係只要是能在電路基板中使用的銅箔即可,沒有特別限制,可以是輥軋銅箔、電解銅箔中的任一者。 Among these metal foils, copper foil is preferably used. The copper foil is not particularly limited as long as it can be used in a circuit board, and may be any of a rolled copper foil and an electrolytic copper foil.

此外,導體層也可以在其表面上形成有抗氧 化性皮膜。例如,在此情況下,單元電路基板的準備步驟可具備:將金屬箔熱壓接在熱塑性液晶聚合物薄膜的單面或雙面上之熱壓接步驟;以及,在經熱壓接後的金屬箔表面上形成抗氧化性皮膜之抗氧化性皮膜形成步驟。 In addition, the conductor layer can also form an anti-oxidation on its surface. Chemical film. For example, in this case, the preparation step of the unit circuit substrate may include: a thermocompression bonding step of thermocompression bonding the metal foil on one or both sides of the thermoplastic liquid crystal polymer film; and, after thermocompression bonding An oxidation resistant film forming step of forming an oxidation resistant film on the surface of the metal foil.

此外,單元電路基板的準備步驟係可進一步具備使矽烷偶合劑附著在導體層表面上之矽烷偶合劑附著步驟。 Further, the step of preparing the unit circuit board may further include a step of attaching the decane coupling agent to the surface of the conductor layer by attaching the decane coupling agent.

作為抗氧化性皮膜,能夠舉出例如:抗氧化性合金層、抗氧化性鍍覆層、苯并三唑類等防鏽劑層等。 Examples of the antioxidant film include an oxidation resistant alloy layer, an oxidation resistant plating layer, and a rust inhibitor layer such as benzotriazole.

另外,可因應導體層及抗氧化性皮膜的種類,以電路加工前或電路加工後之任一順序來形成抗氧化性皮膜。 Further, the oxidation resistant film may be formed in any order before the circuit processing or after the circuit processing depending on the type of the conductor layer and the oxidation resistant film.

例如,在包含熱壓接有金屬箔的情況下,從例如提高黏合性的觀點來看,作為抗氧化性合金層,較佳的是使用至少包含形成金屬箔之金屬的合金。例如,在構成導體層之金屬箔為銅箔的情況下,合金層可為至少包含銅之合金。例如,較佳為在電路加工前形成抗氧化性合金層。 For example, in the case where the metal foil is thermocompression-bonded, it is preferable to use an alloy containing at least a metal forming a metal foil as the oxidation resistant alloy layer from the viewpoint of, for example, improving the adhesion. For example, in the case where the metal foil constituting the conductor layer is a copper foil, the alloy layer may be an alloy containing at least copper. For example, it is preferred to form an oxidation resistant alloy layer before circuit processing.

例如,可以以MEC Co.,Ltd.販售之「FlatBOND GT」等來形成這種合金層。 For example, such an alloy layer can be formed by "FlatBOND GT" or the like sold by MEC Co., Ltd.

另外,有下述情況:在遠離銅箔的部分中存在不含銅之合金部分。在此情況下,可利用蝕刻液,對不含銅之合金部分進行蝕刻。作為這種蝕刻液,能夠舉出例如:「MEC REMOVER S-651A」(MEC Co.,Ltd.製)、「S-PACK H-150」(佐佐木化學藥品(股)製)、包含硝 酸等無機酸的水溶液等。 In addition, there is a case where an alloy portion containing no copper exists in a portion away from the copper foil. In this case, the portion of the alloy containing no copper can be etched using an etchant. As such an etching liquid, for example, "MEC REMOVER S-651A" (manufactured by MEC Co., Ltd.), "S-PACK H-150" (manufactured by Sasaki Chemical Co., Ltd.), and nitric acid are included. An aqueous solution of an inorganic acid such as an acid.

為了減少由導體層之凹凸所引起的表皮效應之影響,維持低傳輸損失,較佳為導體層之表面粗糙度小。就利用以ISO4287-1997為依據之方法所測得之十點平均粗糙度(RzJIS)來說,導體層之表面粗糙度較佳可以為3μm以下,更佳可以為2.0μm以下,尤佳可以為1.5μm以下。十點平均粗糙度(RzJIS)之下限沒有特別的限制,例如可以為0.1μm以上,也可以為0.3μm以上,還可以為0.5μm以上。 In order to reduce the influence of the skin effect caused by the unevenness of the conductor layer and maintain low transmission loss, it is preferred that the surface roughness of the conductor layer is small. For the ten-point average roughness (Rz JIS ) measured by the method based on ISO4287-1997, the surface roughness of the conductor layer may preferably be 3 μm or less, more preferably 2.0 μm or less, and particularly preferably It is 1.5 μm or less. The lower limit of the ten-point average roughness (Rz JIS ) is not particularly limited, and may be, for example, 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more.

在具有上述構成之本發明中,在形成積層體時,不黏合黏合片之導體層的面也可以是平滑的。另外,導體層上雖加工有電路,但電路加工後所剩餘的導體表面也可以是平滑的。 In the invention having the above configuration, the surface of the conductor layer which does not adhere to the adhesive sheet can be made smooth when the laminated body is formed. In addition, although a circuit is processed on the conductor layer, the surface of the conductor remaining after the circuit is processed may be smooth.

導體層的厚度例如較佳為落在1~50μm之範圍內,更佳為落在5~20μm之範圍內。 The thickness of the conductor layer is preferably, for example, in the range of 1 to 50 μm, more preferably in the range of 5 to 20 μm.

再者,從提高導體層之黏合性的觀點來看,亦可使周知或慣用的矽烷偶合劑附著在導體層(特別是合金層)表面上。 Further, from the viewpoint of improving the adhesion of the conductor layer, a well-known or conventional decane coupling agent may be attached to the surface of the conductor layer (particularly, the alloy layer).

[電路基板] [circuit board]

電路基板(較佳為多層電路基板)可以是如下所述之電路基板,即:具備一個以上的單元電路基板和一個以上的電路基板材料,其中該單元電路基板係由在單面或雙面上形成有導體層之熱塑性液晶聚合物薄膜構成的,該電路基板材料係由用來與該單元電路基板之導體層黏合之熱塑性液晶聚合物薄膜構成的。利用以 ISO4287-1997為依據之方法所測出之與電路基板材料黏合一側的導體層表面的十點平均粗糙度(RzJIS)可以為3μm以下。 The circuit substrate (preferably a multilayer circuit substrate) may be a circuit substrate as described below, that is, having one or more unit circuit substrates and one or more circuit substrate materials, wherein the unit circuit substrate is on one or both sides The thermoplastic liquid crystal polymer film formed with a conductor layer is composed of a thermoplastic liquid crystal polymer film for bonding to a conductor layer of the unit circuit substrate. The ten-point average roughness (Rz JIS ) of the surface of the conductor layer on the side bonded to the circuit substrate material measured by the method based on ISO4287-1997 may be 3 μm or less.

例如,本發明之電路基板可為具有以下構成之電路基板等。 For example, the circuit board of the present invention may be a circuit board or the like having the following configuration.

(i)具備單元電路基板和黏合片,且兩片以上的單元電路基板經由黏合片積層而成的電路基板(多層電路基板),其中該單元電路基板具有由熱塑性液晶聚合物薄膜構成的絕緣層(基材層)和形成在薄膜之單面或雙面上的導體層;(ii)具備單元電路基板、以及用來覆蓋該單元電路基板之導體層的覆蓋膜的電路基板(單層或雙層電路基板),其中該單元電路基板具有由熱塑性液晶聚合物薄膜構成的絕緣層(基材層)和形成在薄膜之單面或雙面上的導體層;(iii)具備單元電路基板、黏合片及覆蓋膜,兩片以上的單元電路基板經由黏合片來積層,且電路基板的最外層係由覆蓋單元電路基板之導體層的覆蓋膜所構成之電路基板(多層電路基板),該電路基板具有組合上述(i)及(ii)而成的構成;(iv)具備多片具有由熱塑性液晶聚合物薄膜構成之絕緣層(基材層)的單元電路基板,且兩片以上的單元電路基板不經由黏合片就直接積層而成的電路基板(多層電路基板);及(v)具備兩片以上的單元電路基板、以及覆蓋膜,兩 片以上的單元電路基板不經由黏合片就直接積層起來,且電路基板的最外層係由覆蓋單元電路基板之導體層的覆蓋膜所構成之電路基板(多層電路基板),該電路基板具有組合上述(ii)和(iv)而成的構成。 (i) a circuit board (multilayer circuit board) including a unit circuit board and an adhesive sheet and two or more unit circuit boards laminated via a bonding sheet, wherein the unit circuit board has an insulating layer made of a thermoplastic liquid crystal polymer film (substrate layer) and a conductor layer formed on one or both sides of the film; (ii) a circuit substrate (single layer or double) including a unit circuit substrate and a cover film for covering the conductor layer of the unit circuit substrate a layer circuit substrate), wherein the unit circuit substrate has an insulating layer (base material layer) composed of a thermoplastic liquid crystal polymer film and a conductor layer formed on one or both sides of the film; (iii) having a unit circuit substrate and bonding In the sheet and the cover film, two or more unit circuit boards are laminated via an adhesive sheet, and the outermost layer of the circuit board is a circuit board (multilayer circuit board) composed of a cover film covering a conductor layer of the unit circuit board, the circuit board a configuration in which the above (i) and (ii) are combined; (iv) a plurality of unit circuit substrates having an insulating layer (base material layer) composed of a thermoplastic liquid crystal polymer film, and And (v) includes two or more unit circuit board, and a cover film, two; more blade unit on a circuit board without the circuit board obtained by directly laminated (multilayer circuit board) via the adhesive sheet The unit circuit board above the sheet is directly laminated without passing through the adhesive sheet, and the outermost layer of the circuit board is a circuit board (multilayer circuit board) composed of a cover film covering the conductor layer of the unit circuit board, and the circuit board has the combination described above. (ii) and (iv) constitute a composition.

電路基板可由具有高耐熱性之高熔點液晶聚合物薄膜和具有比該高熔點液晶聚合物薄膜低的耐熱性之低熔點液晶聚合物薄膜構成,例如,可以是選自絕緣基板、黏合片和覆蓋膜之至少兩種電路基板材料由具有高耐熱性之高熔點液晶聚合物薄膜和具有比該高熔點液晶聚合物薄膜低的耐熱性之低熔點液晶聚合物薄膜構成。在該情況下,高熔點液晶聚合物薄膜與低熔點液晶聚合物薄膜之熔點差較佳為0~70℃左右,更佳為0~60℃左右。 The circuit substrate may be composed of a high-melting-point liquid crystal polymer film having high heat resistance and a low-melting-point liquid crystal polymer film having lower heat resistance than the high-melting-point liquid crystal polymer film, and may be, for example, selected from an insulating substrate, an adhesive sheet, and a cover. The at least two circuit substrate materials of the film are composed of a high-melting-point liquid crystal polymer film having high heat resistance and a low-melting-point liquid crystal polymer film having lower heat resistance than the high-melting-point liquid crystal polymer film. In this case, the difference in melting point between the high melting point liquid crystal polymer film and the low melting point liquid crystal polymer film is preferably about 0 to 70 ° C, more preferably about 0 to 60 ° C.

例如,在圖1所示例中,例示了積層體(電路基板)30,該積層體30係經由黏合片3將第二單元電路基板20積層在第一單元電路基板10上而成,其中該第一單元電路基板10係導體層(銅箔)4接合在絕緣層之熱塑性液晶聚合物薄膜1之雙面上而成,該第二單元電路基板20係導體層4形成在絕緣層之熱塑性液晶聚合物薄膜2之單面(上表面)上而成,惟圖示之構成並非用於限定本發明之電路基板。例如,電路基板可以只具有兩片導體層,也可以具有四片以上的導體層。此外,為了覆蓋導體層,電路基板也可以在最外層具備由液晶聚合物薄膜構成的覆蓋膜。 For example, in the example shown in FIG. 1, a laminated body (circuit substrate) 30 is formed by laminating the second unit circuit substrate 20 on the first unit circuit substrate 10 via the adhesive sheet 3, wherein the first A unit circuit substrate 10 is a conductor layer (copper foil) 4 bonded to both sides of a thermoplastic liquid crystal polymer film 1 of an insulating layer, and the second unit circuit substrate 20 is a thermoplastic liquid crystal polymer formed by the conductor layer 4 in an insulating layer. The single film (upper surface) of the film 2 is formed, but the illustrated configuration is not intended to limit the circuit substrate of the present invention. For example, the circuit board may have only two conductor layers, or may have four or more conductor layers. Further, in order to cover the conductor layer, the circuit board may have a cover film made of a liquid crystal polymer film on the outermost layer.

本發明之電路基板例如可以是液晶聚合物薄 膜與導體層之間的黏合強度(剝離強度)為0.6kN/m以上(例如,0.6~2kN/m),較佳為0.8kN/m以上,更佳為1.0kN/m以上。另外,該黏合強度(剝離強度)可以是下述的值:利用以JIS C5016-1994為依據的方法,在每分鐘50mm之速度下,一邊將由液晶聚合物薄膜構成的黏合性材料朝著相對於該液晶聚合物薄膜與導體層之積層體成90°之方向剝離下來,一邊利用拉伸試驗機[NIDEC-SHIMPO CORPORATION製,DIGITAL FORCE GAUGE FGP-2]測量出的剝離強度之值。 The circuit substrate of the present invention may be, for example, a thin liquid crystal polymer The adhesive strength (peeling strength) between the film and the conductor layer is 0.6 kN/m or more (for example, 0.6 to 2 kN/m), preferably 0.8 kN/m or more, and more preferably 1.0 kN/m or more. Further, the adhesive strength (peel strength) may be a value obtained by using a liquid crystal polymer film toward a relative speed of 50 mm per minute by a method based on JIS C5016-1994. The value of the peel strength measured by a tensile tester [DIDECTAL FORCE GAUGE FGP-2, manufactured by NIDEC-SHIMPO CORPORATION] was peeled off in a direction of 90° from the laminate of the conductor layer.

由於本發明之電路基板使用了介電特性優異的熱塑性液晶聚合物作為絕緣材料,因此特別適合用作高頻電路基板。高頻電路並非僅包含只傳輸高頻信號的電路,還包含用來傳輸非高頻信號之信號的傳輸路徑亦一併設於同一平面上的電路,其中,用來傳輸非高頻信號之信號的傳輸路徑例如為下述等,即:將高頻信號轉換為低頻信號,並將生成之低頻信號輸出外部的傳輸路徑;用於供應電源的傳輸路徑,該電源係供給用來驅動高頻對應零件。 Since the circuit board of the present invention uses a thermoplastic liquid crystal polymer having excellent dielectric properties as an insulating material, it is particularly suitable for use as a high-frequency circuit substrate. The high-frequency circuit does not only include a circuit that transmits only a high-frequency signal, but also a circuit in which a transmission path for transmitting a signal of a non-high-frequency signal is also disposed on the same plane, wherein a signal for transmitting a non-high-frequency signal is used. The transmission path is, for example, a high frequency signal converted into a low frequency signal, and the generated low frequency signal is output to an external transmission path; a transmission path for supplying a power supply for supplying a high frequency corresponding part .

例如,在10GHz的頻率下,電路基板的相對介電常數(εr)例如可為2.6~3.5,更佳可為2.6~3.4。 For example, at a frequency of 10 GHz, the relative dielectric constant (? r ) of the circuit substrate can be, for example, 2.6 to 3.5, more preferably 2.6 to 3.4.

此外,例如在10GHz之頻率下,電路基板之介電正切(dielectric tangent)(Tanδ)例如可為0.001到0.01,更佳可為0.001到0.008。 Further, for example, at a frequency of 10 GHz, the dielectric tangent (Tan δ) of the circuit substrate may be, for example, 0.001 to 0.01, more preferably 0.001 to 0.008.

[電路基板的製造方法] [Method of Manufacturing Circuit Board]

以下,對本發明之電路基板的製造方法進行說明。 Hereinafter, a method of manufacturing the circuit board of the present invention will be described.

(準備單元電路基板) (preparation unit circuit board)

首先,準備一片以上的由熱塑性液晶聚合物薄膜構成的絕緣性基材層以及導體層形成在該基材層之單面或雙面上而成的單元電路基板。熱塑性液晶聚合物薄膜和導體層可以使用具有上述所說明的構成之物。 First, one or more insulating base material layers composed of a thermoplastic liquid crystal polymer film and a unit circuit substrate in which a conductor layer is formed on one surface or both surfaces of the base material layer are prepared. As the thermoplastic liquid crystal polymer film and the conductor layer, those having the above-described constitution can be used.

(準備用於與導體層黏合之電路基板材料) (Prepared for circuit board material bonded to the conductor layer)

作為用來與導體層黏合之電路基板材料(黏合性材料),除上述單元電路基板之外,可以另外準備一個以上用來與單元電路基板之導體層黏合之電路基板材料。黏合性材料只要是熱塑性液晶聚合物薄膜即可,例如,可以具體舉出選自黏合片和覆蓋膜中的至少一種。 As the circuit board material (adhesive material) for bonding to the conductor layer, in addition to the unit circuit board described above, one or more circuit board materials for bonding to the conductor layer of the unit circuit board may be separately prepared. The adhesive material may be a thermoplastic liquid crystal polymer film, and for example, at least one selected from the group consisting of an adhesive sheet and a cover film may be specifically mentioned.

另外,作為黏合性材料使用的液晶聚合物薄膜,可以使用上述所記載之熱塑性液晶聚合物薄膜。根據電路基板之構成,作為黏合性材料使用之液晶聚合物薄膜的熔點可以與單元電路基板之基材的熔點相同,但較佳為使用熔點比形成單元電路基板之液晶聚合物薄膜低者。在此情況下,兩者的熔點差例如可以為0~70℃左右,更佳為0~60℃左右。 Further, as the liquid crystal polymer film used as the adhesive material, the thermoplastic liquid crystal polymer film described above can be used. According to the configuration of the circuit board, the melting point of the liquid crystal polymer film used as the adhesive material may be the same as the melting point of the base material of the unit circuit board, but it is preferable to use a lower melting point than the liquid crystal polymer film forming the unit circuit board. In this case, the difference in melting point between the two may be, for example, about 0 to 70 ° C, more preferably about 0 to 60 ° C.

(熱壓接步驟) (hot crimping step)

將熱塑性液晶聚合物薄膜與導體層熱壓接的方法沒有特別的限制,例如,可以使用批次式真空熱壓法、輥壓法、雙帶式壓製法(double belt press)等。輥壓法、雙帶式壓製法也可以是以輥對輥(Roll to Roll)方式進行的輥壓法、雙帶式壓製法。 The method of thermocompression bonding the thermoplastic liquid crystal polymer film with the conductor layer is not particularly limited, and for example, a batch type vacuum hot pressing method, a roll pressing method, a double belt press method, or the like can be used. The roll pressing method and the double belt pressing method may be a roll-to-roll method or a double belt pressing method.

在藉由批次式真空熱壓法將熱塑性液晶聚合 物薄膜與導體層(例如,金屬箔)積層之情況下,例如,可以使用真空熱壓裝置,將切斷成既定大小的熱塑性液晶聚合物薄膜與金屬箔疊合放置在該真空熱壓裝置的兩片加熱板之間,並在真空狀態進行熱壓接(批次式真空熱壓積層法)。 Polymerization of thermoplastic liquid crystals by batch vacuum hot pressing In the case where the film is laminated with a conductor layer (for example, a metal foil), for example, a vacuum heat pressing device may be used to laminate a thermoplastic liquid crystal polymer film cut into a predetermined size with a metal foil and placed on the vacuum heat pressing device. Thermocompression bonding (batch vacuum thermocompression stacking method) is carried out between two heating plates and under vacuum.

在藉由輥壓法將熱塑性液晶聚合物薄膜與導體層(例如,金屬箔)積層而形成積層體,從而製作出單面覆金屬積層板之情況下,係搬運熱塑性液晶聚合物薄膜與金屬箔來使之前進,並將他們一邊疊合一邊引入已加熱的金屬輥和與該金屬輥接觸之橡膠輥之間,使他們通過輥輪之間而進行熱壓接,從而形成積層體,由此來製作金屬箔接合在薄膜之單面上而成的單面覆金屬積層板。此時,可以具有預熱步驟,在該預熱步驟中,在通過輥輪間之前,使薄膜對齊橡膠輥,接著使金屬箔與該薄膜疊合並臨時接合在一起,預熱步驟可以是下述那樣的預熱步驟,即:將橡膠輥與金屬輥之接觸點當作基準,以薄膜與橡膠輥接觸之角度在90~120°之範圍內的方式引入薄膜。 When a thermoplastic liquid crystal polymer film and a conductor layer (for example, a metal foil) are laminated by a roll press method to form a laminate, and a single-sided metal-clad laminate is produced, the thermoplastic liquid crystal polymer film and the metal foil are conveyed. To advance, and to introduce them between the heated metal roll and the rubber roll in contact with the metal roll, so that they are thermocompression bonded between the rolls to form a laminate. A single-sided metal-clad laminate in which a metal foil is bonded to one side of a film. At this time, there may be a preheating step in which the film is aligned with the rubber roller before passing between the rolls, and then the metal foil is temporarily joined to the film stack, and the preheating step may be as follows Such a preheating step is to introduce the contact point of the rubber roller and the metal roller as a reference, and introduce the film in such a manner that the angle at which the film contacts the rubber roller is in the range of 90 to 120°.

在藉由輥壓法將導體層(例如,金屬箔)積層在熱塑性液晶聚合物薄膜之雙面上來形成積層體,從而製作出雙面覆金屬積層板之情況下,可以藉由在加熱輥之間對金屬箔接合在熱塑性液晶聚合物薄膜之雙面上而成的雙面覆金屬積層板進行壓接來製造。此時,可以利用雙面覆金屬積層板之製造方法來進行製造,該方法的特徵在於進行下述三個步驟。(1)第一步驟:兩片金屬箔 在與加熱輥接觸之前分別進行預熱。(2)第二步驟:經過了第一步驟的兩片被預熱到100~250℃之溫度的金屬箔分別與成對之其他加熱輥接觸,並以一對加熱輥之接觸點為基準,而依70~200°之角度θ的方式接觸,一邊在加熱輥上被運送,一邊熱膨脹而成為非拉緊狀態。(3)第三步驟:藉由進行第二步驟而成為非拉緊狀態,在成對的其他加熱輥上分別被運送的兩片金屬箔、以及在其間被運送的熱塑性液晶聚合物薄膜在加熱輥之間被壓接而一體化,由此得到的積層板在加熱輥之間被運送。 In the case where a conductor layer (for example, a metal foil) is laminated on both sides of a thermoplastic liquid crystal polymer film by a roll pressing method to form a laminate, thereby producing a double-sided metal-clad laminate, it is possible to use a heating roller. It is manufactured by pressure-bonding a double-sided metal-clad laminate in which a metal foil is bonded to both surfaces of a thermoplastic liquid crystal polymer film. In this case, the production can be carried out by a manufacturing method of a double-sided metal-clad laminate, which is characterized by performing the following three steps. (1) First step: two pieces of metal foil Preheating is performed separately before contact with the heating roller. (2) Second step: two pieces of metal foil which have been preheated to a temperature of 100 to 250 ° C after the first step are respectively brought into contact with the other pair of heating rolls, and based on the contact points of the pair of heating rolls, On the other hand, the film is transported on the heating roller at an angle θ of 70 to 200°, and is thermally expanded to be in a non-tensioned state. (3) Third step: by performing the second step to be in a non-tensioned state, the two metal foils respectively conveyed on the pair of other heating rolls, and the thermoplastic liquid crystal polymer film conveyed therebetween are heated The rolls are pressure-bonded and integrated, and the thus obtained laminated sheets are conveyed between the heating rolls.

在藉由雙帶式壓製法將熱塑性液晶聚合物薄膜與導體層(例如,金屬箔)積層而形成積層體之情況下,可以是:首先,將熱塑性液晶聚合物薄膜與金屬箔疊合,接著,在雙帶式壓機中,於熱塑性液晶聚合物薄膜之熔點與薄膜之劣化點之間的溫度下,施加大約5~500巴之壓力來按壓金屬箔與該薄膜,使進行接合而形成積層體。此時,按壓的壓力也可以是大約5~100巴,另外,也可以使在按壓中薄膜處於比其熔點高之溫度下的滯留時間為0.5~1000秒,另外,溫度也可以是能夠得到剝離強度為每直線1cm在10N以上且尺寸安定性之變化小於±0.2%的熱塑性液晶聚合物/金屬箔積層體之溫度。 In the case where a thermoplastic liquid crystal polymer film is laminated with a conductor layer (for example, a metal foil) by a double-belt pressing method to form a laminate, the thermoplastic liquid crystal polymer film may be laminated with a metal foil, and then, In a double belt press, a pressure of about 5 to 500 bar is applied at a temperature between the melting point of the thermoplastic liquid crystal polymer film and the deterioration point of the film to press the metal foil and the film to form a laminate. body. In this case, the pressing pressure may be about 5 to 100 bar, and the residence time of the film at a temperature higher than the melting point during pressing may be 0.5 to 1000 seconds, and the temperature may be peeled off. The strength is a temperature of a thermoplastic liquid crystal polymer/metal foil laminate having a thickness of 1 N or more per linear line and a change in dimensional stability of less than ± 0.2%.

在將熱塑性液晶聚合物薄膜與導體層熱壓接時的熱壓接溫度較佳為薄膜之熔點Tm-30℃以下,更佳可以為Tm-35℃以下,尤佳可以為Tm-40℃以下。藉由在該溫度範圍下進行熱壓接,能夠進一步抑制熱壓接後的熱塑性液晶聚合物薄膜的韌性下降率。 The thermocompression bonding temperature at the time of thermocompression bonding the thermoplastic liquid crystal polymer film and the conductor layer is preferably a melting point of the film of Tm -30 ° C or less, more preferably Tm - 35 ° C or less, and particularly preferably Tm - 40 ° C or less. . By performing thermocompression bonding in this temperature range, the rate of decrease in the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding can be further suppressed.

將熱塑性液晶聚合物薄膜與導體層熱壓接後的液晶聚合物薄膜之韌性的下降率較佳為30%以內,更佳為25%以內,再佳為15%以內,尤佳為5%以內。當熱壓接後的液晶聚合物薄膜之韌性的下降率落在該範圍內時,則在熱壓接後也能夠維持更高的剝離強度。 The rate of decrease in toughness of the liquid crystal polymer film after thermocompression bonding the thermoplastic liquid crystal polymer film and the conductor layer is preferably within 30%, more preferably within 25%, even more preferably within 15%, and even more preferably within 5%. . When the rate of decrease in the toughness of the liquid crystal polymer film after thermocompression bonding falls within this range, higher peel strength can be maintained even after thermocompression bonding.

此外,只要是要與導體層熱壓接之熱塑性液晶聚合物薄膜之與導體層熱壓接後的韌性為30MPa以上100MPa以下,則可以根據熱塑性液晶聚合物薄膜之性質從例如0.5~6MPa的大範圍中選擇熱壓接時施加的壓力。例如,即使按壓壓力為5MPa以下,特別是為4.5MPa以下(例如,0.5MPa~3MPa,較佳為1~2.5MPa),也能夠實現液晶聚合物薄膜與導體層間的良好的黏合。 Further, as long as the toughness after thermocompression bonding with the conductor layer of the thermoplastic liquid crystal polymer film to be thermocompression bonded to the conductor layer is 30 MPa or more and 100 MPa or less, the thermoplastic liquid crystal polymer film can be made large, for example, from 0.5 to 6 MPa. The pressure applied during thermocompression is selected in the range. For example, even if the pressing pressure is 5 MPa or less, particularly 4.5 MPa or less (for example, 0.5 MPa to 3 MPa, preferably 1 to 2.5 MPa), good adhesion between the liquid crystal polymer film and the conductor layer can be achieved.

在本發明之電路基板中,依據JIS C5016-1994測量出之熱塑性液晶聚合物薄膜與導體層之間的黏合強度(剝離強度)較佳為0.6kN/m以上,更佳為0.8kN/m以上,尤佳為1.0kN/m以上。 In the circuit board of the present invention, the adhesive strength (peel strength) between the thermoplastic liquid crystal polymer film and the conductor layer measured in accordance with JIS C5016-1994 is preferably 0.6 kN/m or more, more preferably 0.8 kN/m or more. More preferably, it is 1.0kN/m or more.

另外,在不阻礙本發明之效果的範圍內,可以對電路基板材料進行表面處理。表面處理係可藉由例如紫外線照射、電漿照射、物理研磨等周知的方法來進行。 Further, the surface of the circuit board material can be surface-treated within a range that does not impair the effects of the present invention. The surface treatment can be carried out by a known method such as ultraviolet irradiation, plasma irradiation, or physical polishing.

[實施例] [Examples]

以下,利用實施例詳細說明本發明,但本發明不受到本實施例的任何限制。另外,在以下實施例和比較例中,係藉由下述方法來測量了各種物性。 Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited by the examples. Further, in the following examples and comparative examples, various physical properties were measured by the following methods.

(韌性(MPa)) (Toughness (MPa))

熱塑性液晶聚合物薄膜之韌性(MPa)係根據利用以ASTM D882為依據的方法測量出的伸長率和最大拉伸強度之測量值,利用下述式(1)進行計算而求出的。 The toughness (MPa) of the thermoplastic liquid crystal polymer film was determined by calculation using the following formula (1) based on the measured values of the elongation and the maximum tensile strength measured by the method based on ASTM D882.

韌性=伸長率×最大拉伸強度×1/2 (1) Toughness = elongation × maximum tensile strength × 1/2 (1)

此外,熱壓接後的熱塑性液晶聚合物薄膜之韌性(MPa),係在將熱塑性液晶聚合物薄膜與導體層熱壓接後,將熱塑性液晶聚合物薄膜從導體層上剝離下來,並利用同樣的方法求出。 Further, the toughness (MPa) of the thermocompression-bonded thermoplastic liquid crystal polymer film is obtained by thermally pressing the thermoplastic liquid crystal polymer film and the conductor layer, and then peeling off the thermoplastic liquid crystal polymer film from the conductor layer, and using the same The method is found.

(熱壓接後的韌性下降率(%)) (Toughness reduction rate after thermocompression bonding (%))

分別測量熱壓接前的熱塑性液晶聚合物薄膜之韌性(MPa)、以及與被黏合體熱壓接後的該薄膜之韌性(MPa),求出熱壓接前後的韌性的下降率。 The toughness (MPa) of the thermoplastic liquid crystal polymer film before thermocompression bonding and the toughness (MPa) of the film after thermocompression bonding with the adherend were measured, and the rate of decrease in toughness before and after thermocompression bonding was determined.

韌性的下降率(%)=100×(熱壓接前的韌性(MPa)-熱壓接後的韌性(MPa))/熱壓接前的韌性(MPa) Rate of decline of toughness (%) = 100 × (toughness before thermocompression bonding (MPa) - toughness after thermocompression bonding (MPa)) / toughness before thermocompression bonding (MPa)

(楊氏模數(GPa)) (Young's Modulus (GPa))

熱塑性液晶聚合物薄膜之楊氏模數(GPa)係利用以ASTM D882為依據的方法,藉由對薄膜施加拉伸載荷並且求出其位移,從而利用下述式(2)進行計算來求出。 The Young's Modulus (GPa) of the thermoplastic liquid crystal polymer film is obtained by applying a tensile load to the film and determining the displacement thereof by a method based on ASTM D882, and calculating by the following formula (2). .

E=(σn+1n)/(εn+1n) (2) E=(σ n+1n )/(ε n+1n ) (2)

(在此,E:楊氏模數(GPa);σn+1n:改變了拉伸載荷時的拉伸應力之變化量;εn+1n:改變了拉伸載荷時的拉伸應變之變化量) When the tensile load changes: (Here, E: Young's modulus (GPa);:; σ n + 1 -σ n ε n + 1 -ε n changes the amount of change of the tensile stress at a tensile load The amount of change in tensile strain)

(表面粗糙度(RzJIS)(μm)) (surface roughness (Rz JIS ) (μm))

使用接觸式表面粗度計(Mitutoyo Corporation製,型式SJ-201),測量了積層體上的已進行粗糙化處理的銅箔 表面的十點平均粗糙度(RzJIS)。測量係利用以ISO4287-1997為依據的方法進行。更詳細而言,表面粗糙度(RzJIS)是:從粗糙度曲線中按其平均線方向取樣一段基準長度,該取樣部分的最高的峰頂(向上凸的曲線的頂點)到第五高的峰頂的標高的平均值與該取樣部分的最低的谷底(向下凹的曲線的底點)到第五低谷底的標高的平均值之差,該差以μm表示。示出了十點平均粗糙度。 The ten-point average roughness (Rz JIS ) of the surface of the roughened copper foil on the laminate was measured using a contact surface roughness meter (manufactured by Mitutoyo Corporation, type SJ-201). The measurement system was carried out using a method based on ISO4287-1997. In more detail, the surface roughness (Rz JIS ) is: sampling a reference length from the roughness curve in the mean line direction thereof, the highest peak of the sampling portion (the apex of the upward convex curve) to the fifth highest The difference between the average value of the elevation of the peak and the average of the lowest valley bottom (the bottom point of the downward concave curve) to the fifth bottom of the sampling portion, the difference is expressed in μm. Ten point average roughness is shown.

(黏合強度:剝離強度(kN/m)) (Adhesive strength: Peel strength (kN/m))

利用以JIS C5016-1994為依據的方法,在每分鐘50mm之速度下,一邊將由液晶聚合物薄膜構成的黏合性材料朝著相對於液晶聚合物薄膜與導體層之積層體成90°之方向剝離下來,一邊利用拉伸試驗機[NIDEC-SHIMPO CORPORATION製,DIGITAL FORCE GAUGE FGP-2]測量剝離強度,將獲得的值作為黏合強度(剝離強度)(kN/m)。 According to the method based on JIS C5016-1994, the adhesive material composed of the liquid crystal polymer film is peeled off at a rate of 90° with respect to the laminate of the liquid crystal polymer film and the conductor layer at a speed of 50 mm per minute. The peel strength was measured by a tensile tester [DIDECTAL FORCE GAUGE FGP-2, manufactured by NIDEC-SHIMPO CORPORATION], and the obtained value was defined as the adhesive strength (peel strength) (kN/m).

(傳輸損失(db/cm)的測量) (Measurement of transmission loss (db/cm))

使用微波網路分析儀[Agilent公司製,型式:8722ES]與探針(Cascade Microtech,Inc.製,型式:ACP40-250),以微帶線結構測量了測量頻率10GHz的S21參數。 The S21 parameter at a measurement frequency of 10 GHz was measured in a microstrip line structure using a microwave network analyzer [manufactured by Agilent, Model: 8722ES] and a probe (manufactured by Cascade Microtech, Inc., type: ACP40-250).

[實施例1] [Example 1]

準備了熔點335℃、韌性80MPa、楊氏模數3.5GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為2.5μm之輥軋銅箔(三井金屬(股)製,SQ-VLP,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在300℃(熱塑性液晶聚合物薄膜 之熔點Tm-35℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 335 ° C, a toughness of 80 MPa, and a Young's modulus of 3.5 GPa was prepared. As a conductor layer, a rolled copper foil (manufactured by Mitsui Metals Co., Ltd., SQ-VLP, thickness: 12 μm) having a surface roughness Rz JIS of 2.5 μm was laminated on the thermoplastic liquid crystal polymer film, and a vacuum hot pressing device was used. The heating plate was set at 300 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 35 ° C), and subjected to thermocompression bonding under a pressure of 4 MPa for 10 minutes to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

[實施例2] [Embodiment 2]

準備了熔點325℃、韌性68MPa、楊氏模數3.0GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為2.5μm之輥軋銅箔(三井金屬(股)製,SQ-VLP,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在295℃(熱塑性液晶聚合物薄膜之熔點Tm-30℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 325 ° C, a toughness of 68 MPa, and a Young's modulus of 3.0 GPa was prepared. As a conductor layer, a rolled copper foil (manufactured by Mitsui Metals Co., Ltd., SQ-VLP, thickness: 12 μm) having a surface roughness Rz JIS of 2.5 μm was laminated on the thermoplastic liquid crystal polymer film, and a vacuum hot pressing device was used. The heating plate was set at 295 ° C (melting point of the thermoplastic liquid crystal polymer film Tm - 30 ° C), and thermocompression bonding was carried out for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性下降率為19%。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness reduction rate of the thermoplastic liquid crystal polymer film after thermocompression bonding was 19%. The results are shown in Table 7.

[實施例3] [Example 3]

準備了熔點280℃、韌性42MPa、楊氏模數2.5GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為2.5μm之輥軋銅箔(三井金屬(股)製,SQ-VLP,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在250℃(熱塑性液晶聚合物薄膜之熔點Tm-30℃),於4MPa之壓力下,進行10分鐘的熱壓 接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 280 ° C, a toughness of 42 MPa, and a Young's modulus of 2.5 GPa was prepared. As a conductor layer, a rolled copper foil (manufactured by Mitsui Metals Co., Ltd., SQ-VLP, thickness: 12 μm) having a surface roughness Rz JIS of 2.5 μm was laminated on the thermoplastic liquid crystal polymer film, and a vacuum hot pressing device was used. The heating plate was set at 250 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 30 ° C), and thermocompression bonding was carried out for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性下降率為17%。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness reduction rate of the thermoplastic liquid crystal polymer film after thermocompression bonding was 17%. The results are shown in Table 7.

[實施例4] [Example 4]

準備了熔點335℃、韌性80MPa、楊氏模數3.5GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為1.0μm之輥軋銅箔(JX日鑛日石金屬(股)製,BHY-X,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在300℃(熱塑性液晶聚合物薄膜之熔點Tm-35℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 335 ° C, a toughness of 80 MPa, and a Young's modulus of 3.5 GPa was prepared. A rolled copper foil (JX Nippon Mining & Metal Co., Ltd., BHY-X, thickness: 12 μm) having a surface roughness Rz JIS of 1.0 μm was laminated as a conductor layer on the thermoplastic liquid crystal polymer film, and vacuum was used. In the hot press apparatus, a hot plate was set at 300 ° C (melting point of the thermoplastic liquid crystal polymer film Tm - 35 ° C), and thermocompression bonding was performed for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

[實施例5] [Example 5]

準備了熔點335℃、韌性80MPa、楊氏模數3.5GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為1.0μm之輥軋銅箔(JX日鑛日石金屬(股)製,BHY-X,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在325℃(熱塑性液晶聚合物薄膜之熔點Tm-10℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 335 ° C, a toughness of 80 MPa, and a Young's modulus of 3.5 GPa was prepared. A rolled copper foil (JX Nippon Mining & Metal Co., Ltd., BHY-X, thickness: 12 μm) having a surface roughness Rz JIS of 1.0 μm was laminated as a conductor layer on the thermoplastic liquid crystal polymer film, and vacuum was used. In the hot press apparatus, the heating plate was set at 325 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 10 ° C), and thermocompression bonding was carried out for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性下降率為37.5%。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness reduction rate of the thermoplastic liquid crystal polymer film after thermocompression bonding was 37.5%. The results are shown in Table 7.

[比較例1] [Comparative Example 1]

準備了熔點320℃、韌性16MPa、楊氏模數4.0GPa之熱塑性液晶聚合物薄膜。作為導體層將表面粗糙度RzJIS為2.5μm之輥軋銅箔(三井金屬(股)製,SQ-VLP,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在290℃(熱塑性液晶聚合物薄膜之熔點Tm-30℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A thermoplastic liquid crystal polymer film having a melting point of 320 ° C, a toughness of 16 MPa, and a Young's modulus of 4.0 GPa was prepared. As a conductor layer, a rolled copper foil (manufactured by Mitsui Metals Co., Ltd., SQ-VLP, thickness: 12 μm) having a surface roughness Rz JIS of 2.5 μm was laminated on the thermoplastic liquid crystal polymer film, and a vacuum hot pressing device was used. The heating plate was set at 290 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 30 ° C), and thermocompression bonding was carried out for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

[比較例2] [Comparative Example 2]

使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模進行擠製,從而獲得厚度50μm之薄膜。該薄膜之熔點Tm為280℃,韌性為20MPa。 The thermotropic liquid crystal polyester composed of 27 mol% of 6-hydroxy-2-naphthoic acid unit and 73 mol% of p-hydroxybenzoic acid unit was heated and kneaded at 280 to 300 ° C using a uniaxial extruder. Then, extrusion was carried out using a blow mold having a diameter of 40 mm and a slit interval of 0.6 mm to obtain a film having a thickness of 50 μm. The film had a melting point Tm of 280 ° C and a toughness of 20 MPa.

作為導體層將表面粗糙度RzJIS為2.5μm之輥軋銅箔(三井金屬(股)製,SQ-VLP,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設 定在250℃(熱塑性液晶聚合物薄膜之熔點Tm-30℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 As a conductor layer, a rolled copper foil (manufactured by Mitsui Metals Co., Ltd., SQ-VLP, thickness: 12 μm) having a surface roughness Rz JIS of 2.5 μm was laminated on the thermoplastic liquid crystal polymer film, and a vacuum hot pressing device was used. The heating plate was set at 250 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 30 ° C), and thermocompression bonding was carried out for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

[比較例3] [Comparative Example 3]

使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模進行擠製,從而獲得厚度50μm之薄膜。該薄膜之熔點Tm為280℃。 The thermotropic liquid crystal polyester composed of 27 mol% of 6-hydroxy-2-naphthoic acid unit and 73 mol% of p-hydroxybenzoic acid unit was heated and kneaded at 280 to 300 ° C using a uniaxial extruder. Then, extrusion was carried out using a blow mold having a diameter of 40 mm and a slit interval of 0.6 mm to obtain a film having a thickness of 50 μm. The film had a melting point Tm of 280 °C.

對獲得的薄膜進行熱處理。在熱處理中,不進行溫度的升溫,而是將薄膜表面溫度固定在260℃來進行4小時的熱處理,然後將薄膜表面溫度固定在285℃來進行6小時的熱處理,以兩階段的溫度條件進行熱處理。獲得的熱塑性液晶聚合物薄膜之熔點Tm為350℃,韌性為20MPa。 The obtained film was subjected to heat treatment. In the heat treatment, the temperature of the film is not fixed, but the surface temperature of the film is fixed at 260 ° C for 4 hours of heat treatment, and then the surface temperature of the film is fixed at 285 ° C for 6 hours of heat treatment, under two-stage temperature conditions. Heat treatment. The obtained thermoplastic liquid crystal polymer film had a melting point Tm of 350 ° C and a toughness of 20 MPa.

作為導體層將表面粗糙度RzJ1S為1.0μm之輥軋銅箔(JX日鑛日石金屬(股)製,BHY-X,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在300℃(熱塑性液晶聚合物薄膜之熔點Tm-50℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A rolled copper foil (manufactured by JX Nippon Mining Co., Ltd., BHY-X, thickness: 12 μm) having a surface roughness Rz J1S of 1.0 μm was laminated as a conductor layer on the thermoplastic liquid crystal polymer film, and vacuum was used. In the hot press apparatus, a hot plate was set at 300 ° C (melting point of the thermoplastic liquid crystal polymer film Tm - 50 ° C), and thermocompression bonding was performed for 10 minutes under a pressure of 4 MPa to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚 合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 For the laminated body produced, the copper foil and the thermoplastic liquid crystal were measured. The peel strength of the film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

[比較例4] [Comparative Example 4]

使用單軸擠壓機,在280~300℃下對由6-羥基-2-萘甲酸單元27莫耳%、對羥苯甲酸單元73莫耳%構成的熱致液晶聚酯進行加熱混煉,然後利用直徑40mm、狹縫間隔0.6mm之吹塑模進行擠製,從而獲得厚度50μm之薄膜。該薄膜之熔點Tm為280℃。 The thermotropic liquid crystal polyester composed of 27 mol% of 6-hydroxy-2-naphthoic acid unit and 73 mol% of p-hydroxybenzoic acid unit was heated and kneaded at 280 to 300 ° C using a uniaxial extruder. Then, extrusion was carried out using a blow mold having a diameter of 40 mm and a slit interval of 0.6 mm to obtain a film having a thickness of 50 μm. The film had a melting point Tm of 280 °C.

對獲得的薄膜進行熱處理。在熱處理中,不進行溫度的升溫,而是將薄膜表面溫度固定在260℃來進行4小時的熱處理,然後將薄膜表面溫度固定在300℃來進行6小時的熱處理,以兩階段的溫度條件進行熱處理。獲得的熱塑性液晶聚合物薄膜之熔點Tm為335℃,韌性為18MPa。 The obtained film was subjected to heat treatment. In the heat treatment, the temperature of the film is not fixed, but the surface temperature of the film is fixed at 260 ° C for 4 hours, and then the surface temperature of the film is fixed at 300 ° C for 6 hours of heat treatment, under two-stage temperature conditions. Heat treatment. The obtained thermoplastic liquid crystal polymer film had a melting point Tm of 335 ° C and a toughness of 18 MPa.

作為導體層將表面粗糙度RzJIS為1.0μm之輥軋銅箔(JX日鑛日石金屬(股)製,BHY-X,厚度12μm)疊合到該熱塑性液晶聚合物薄膜上,並使用真空熱壓裝置,將加熱盤設定在305℃(熱塑性液晶聚合物薄膜之熔點Tm-30℃),於4MPa之壓力下,進行10分鐘的熱壓接而製作積層體。 A rolled copper foil (JX Nippon Mining & Metal Co., Ltd., BHY-X, thickness: 12 μm) having a surface roughness Rz JIS of 1.0 μm was laminated as a conductor layer on the thermoplastic liquid crystal polymer film, and vacuum was used. The hot press apparatus was set at 305 ° C (the melting point of the thermoplastic liquid crystal polymer film Tm - 30 ° C), and subjected to thermocompression bonding under a pressure of 4 MPa for 10 minutes to prepare a laminate.

對於製作出的積層體,測量了銅箔與熱塑性液晶聚合物薄膜之剝離強度、以及熱壓接後的熱塑性液晶聚合物薄膜的韌性。熱壓接後的熱塑性液晶聚合物薄膜的韌性並未下降。將結果示於表7。 The peel strength of the copper foil and the thermoplastic liquid crystal polymer film and the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding were measured for the produced laminate. The toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding did not decrease. The results are shown in Table 7.

從實施例1~3的結果可知:熱壓接後的熱塑性液晶聚合物薄膜的韌性越高,銅箔與熱塑性液晶聚合物薄膜之剝離強度就越大。 From the results of Examples 1 to 3, it is understood that the higher the toughness of the thermoplastic liquid crystal polymer film after thermocompression bonding, the greater the peel strength of the copper foil and the thermoplastic liquid crystal polymer film.

而且,可知:比較例1~4之熱塑性液晶聚合物薄膜的韌性小於30MPa,如比較例1~4般之低韌性的 薄膜係銅箔與該薄膜之剝離強度為0.6kN/m以下,顯示出較低的值。 Further, it is understood that the thermoplastic liquid crystal polymer films of Comparative Examples 1 to 4 have a toughness of less than 30 MPa, and have low toughness as in Comparative Examples 1 to 4. The peel strength of the film-based copper foil and the film was 0.6 kN/m or less, which showed a low value.

對實施例4與實施例5進行比較,可知:由於實施例4係在熱塑性液晶聚合物薄膜之熔點(Tm)-35℃的溫度下將熱塑性液晶聚合物薄膜與銅箔壓接在一起,因此熱壓接後的薄膜的韌性為80MPa,熱壓接後的韌性未下降,因此能夠產生1.2kN/m的高剝離強度。另一方面,由於實施例5係在Tm-10℃之溫度下將熱塑性液晶聚合物薄膜與銅箔壓接在一起,因此熱壓接後的薄膜的韌性為50MPa,其下降率高達37.5%,結果是剝離強度為0.8kN/m,將熱壓接後的韌性的下降率抑制得較低的實施例4得到了良好的結果。 Comparing Example 4 with Example 5, it is understood that Example 4 is obtained by crimping a thermoplastic liquid crystal polymer film with a copper foil at a temperature of a melting point (Tm) of -35 ° C of the thermoplastic liquid crystal polymer film. The toughness of the film after thermocompression bonding was 80 MPa, and the toughness after thermocompression bonding was not lowered, so that a high peel strength of 1.2 kN/m was produced. On the other hand, since the thermoplastic liquid crystal polymer film is pressed against the copper foil at a temperature of Tm - 10 ° C in Example 5, the toughness of the film after thermocompression bonding is 50 MPa, and the rate of decrease is as high as 37.5%. As a result, in Example 4 in which the peel strength was 0.8 kN/m and the rate of decrease in toughness after thermocompression bonding was kept low, good results were obtained.

此外,如表7所示,實施例1~5能夠獲得與比較例1~4相等的傳輸損失,由以上可知,實施例1~5能夠既維持良好的高頻特性,又實現高剝離強度。 Further, as shown in Table 7, in Examples 1 to 5, transmission loss equivalent to Comparative Examples 1 to 4 was obtained, and as described above, Examples 1 to 5 were able to maintain good high-frequency characteristics and achieve high peel strength.

Claims (7)

一種熱塑性液晶聚合物薄膜,其在將熱塑性液晶聚合物薄膜與導體層熱壓接後,利用以ASTM D882為依據的方法所測量出的該熱塑性液晶聚合物薄膜的韌性為30MPa以上100MPa以下。 A thermoplastic liquid crystal polymer film having a toughness of 30 MPa or more and 100 MPa or less as measured by a method based on ASTM D882 after thermocompression bonding a thermoplastic liquid crystal polymer film and a conductor layer. 如請求項1之熱塑性液晶聚合物薄膜,其中,利用以ASTM D882為依據的方法所測量出的該熱塑性液晶聚合物薄膜的楊氏模數為2.0GPa以上4.0GPa以下。 The thermoplastic liquid crystal polymer film according to claim 1, wherein the thermoplastic liquid crystal polymer film has a Young's modulus of 2.0 GPa or more and 4.0 GPa or less as measured by a method based on ASTM D882. 如請求項1或2之熱塑性液晶聚合物薄膜,其中,在該熱塑性液晶聚合物薄膜之熔點Tm-30℃以下的溫度下,將該熱塑性液晶聚合物薄膜與導體層熱壓接後,該熱塑性液晶聚合物薄膜的韌性下降率為30%以內。 The thermoplastic liquid crystal polymer film according to claim 1 or 2, wherein the thermoplastic liquid crystal polymer film is thermocompression bonded to the conductor layer at a temperature of a melting point of Tm-30 ° C or less of the thermoplastic liquid crystal polymer film, the thermoplastic The liquid crystal polymer film has a toughness reduction rate of 30% or less. 一種電路基板,其係將如請求項1至3中任1項之熱塑性液晶聚合物薄膜與導體層予以積層而成。 A circuit board obtained by laminating a thermoplastic liquid crystal polymer film according to any one of claims 1 to 3 and a conductor layer. 如請求項4之電路基板,其中,利用以ISO4287-1997為依據的方法所測量出的該導體層表面之十點平均粗糙度(RzJIS)為3μm以下。 The circuit board of claim 4, wherein the ten-point average roughness (Rz JIS ) of the surface of the conductor layer measured by the method based on ISO4287-1997 is 3 μm or less. 如請求項4或5之電路基板,其中,利用以JIS C5016-1994為依據的方法所測量出的該熱塑性液晶聚合物薄膜與和該熱塑性液晶聚合物薄膜黏合後之該導體層之間的黏合強度為0.6kN/m以上。 The circuit substrate of claim 4 or 5, wherein the thermoplastic liquid crystal polymer film is bonded to the conductor layer bonded to the thermoplastic liquid crystal polymer film by a method based on JIS C5016-1994 The strength is 0.6 kN/m or more. 一種電路基板,其包括熱塑性液晶聚合物薄膜、以及積層在該熱塑性液晶聚合物薄膜上的導體層,在將該導體層從該熱塑性液晶聚合物薄膜上剝離後,利用以ASTM D882為依據的方法所測量出的該熱塑性液晶聚合物薄膜的韌性為30MPa以上100MPa以下。 A circuit substrate comprising a thermoplastic liquid crystal polymer film and a conductor layer laminated on the thermoplastic liquid crystal polymer film, after peeling the conductor layer from the thermoplastic liquid crystal polymer film, using a method based on ASTM D882 The toughness of the thermoplastic liquid crystal polymer film measured was 30 MPa or more and 100 MPa or less.
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