TW201643280A - Rapid quantitative method of monitoring additive content level in electronic component micro-electroplating - Google Patents

Abstract

The present invention provides a rapid quantitative method of monitoring the additive content levels in electronic component micro-electroplating, which is used to monitor the concentration changes of the additive in an electroplating solution. The method mainly uses the principle of convection-dependent adsorption (CDA) of additive to monitor, at fixed voltage, online the current density difference of the additive in the electroplating solution, compare it to a calibration curve, and determine whether it is less or more than a predetermined value, thereby rapidly determining whether the concentration of the additive is normal and whether the deposition and filling effect of the metal electroplating is proper. The present invention can speed up the decision-making of the industrial electroplating on site and allow the addition of different additives.

Description

Rapid quantitative method for monitoring the content of additives in electronic components

The invention relates to the micro-electroplating technology of the electronic component, and more specifically to a rapid quantitative method for quickly monitoring the concentration of the additive in the plating solution to determine whether the metal plating deposition filling effect is appropriate for the micro-electroplating monitoring additive content of the electronic component. By.

According to the conventional micro-plating of electronic components (such as semiconductor) (such as copper plating), it is necessary to adjust the additive formula of the plating solution (such as sulfuric acid type plating solution) according to the arrangement of various holes. Generally, the basic of sulfuric acid type plating solution The formula is mainly divided into two types, one is deep-hole formula (high copper and low acid), and the other is flat formula (low copper and high acid). The additives can be divided into brighteners (accelerators), inhibitors and flats according to their functions. Three kinds of agents.

Since the above-mentioned conventional organic additive contains a molecule of nitrogen, oxygen and sulfur atoms and has an unbonded π-electron pair (electron transport group), it is easy to form a coordination bond with copper ions and affect the transport of copper ions in an aqueous solution. Speed, and participate in changing the redox potential of copper ions, which in turn affects the deposition behavior of copper. Secondly, when plating, as the plating time increases, the content of the additive will start to be consumed, making the concentration of the additive in the plating inaccurate, resulting in In case of poor filling effect or poor surface morphology, in order to accurately control the concentration of additives in the plating bath, electroplating is performed at the optimum concentration of the additive, and the best plating effect is obtained. The commonly used concentration analysis method is cyclic voltammetry stripping method. (CVS), ultraviolet visible light spectrometer (UV) and ion chromatography (LC).

Although the previous method of concentration analysis is accurate, the analysis process is time consuming and not suitable for use on the On Line program. Obviously there are still improvements.

The main object of the present invention is to provide a rapid quantitative method for monitoring the content of an additive for electronic component micro-plating, which can quickly monitor whether the concentration of the additive in the plating solution is normal, and thereby determine whether the metal plating deposition filling effect is appropriate and has good stability. Very practical value.

Therefore, in order to achieve the foregoing object, the present invention provides a rapid quantitative method for monitoring the content of an additive for electronic component micro-plating, which can monitor the concentration change of the additive in the plating solution, mainly under the condition of constant voltage, rapid monitoring and plating on the line. The current density difference of the additive in the liquid is compared with the calibration curve to determine whether it exceeds a predetermined value to know whether the additive concentration is normal, and thereby whether the metal plating deposition filling effect is appropriate.

Further, the difference in current density of the additive in the plating solution is compared with the calibration curve to determine whether it is less than or greater than the predetermined value.

Further, the predetermined value refers to a plating mother liquid without an additive and a plating liquid having an additive added to a critical point, respectively, after plating for a predetermined time. The current value difference.

Further, the critical point refers to an additive content which can completely suppress the amount of reduction current density.

Further, the plating mother liquid is a sulfuric acid type plating solution, and the additive contains a fixing inhibitor, a gloss agent, and a leveling agent.

Further, the plating mother liquid is a high copper low acid plating solution.

Figure 1 is a plot of different MPSA concentrations in a mixed formulation of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ^- : 46 ppm, 2-MP: 2 ppm, PEG: 90 ppm, 1000 rpm at constant voltage.

Fig. 2 is a graph showing the average current density and deposition thickness of different MPSA concentrations of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ^- : 46 ppm, 2-MP: 2 ppm, PEG: 90 ppm, 1000 rpm mixed formulation.

Figure 3 is a plot of different MPSA concentration current density difference for CuSO ₄ : 0.8M, H ₂ SO ₄ : 0.5M, Cl ^- : 46ppm, 2-MP: 2ppm, PEG: 90ppm, 1000rpm mixing formula (check-line diagram) .

Figure 4 is a graph showing the different 2MP concentration profiles of the mixed formula of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ^- : 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm.

Figure 5 is a plot of average 2MP concentration average current density and deposition thickness for CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ^- : 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm blending formulation.

Fig. 6 is a graph showing the difference in current density of 2MP concentration currents of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ⁻ : 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm mixed formula (check-line diagram).

Figure 7 is a graph of different JGB concentrations of mixed formulas of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl: 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm.

Figure 8 is a plot of final current density and deposition thickness for different JGB concentrations of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl: 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm blending formulation.

Figure 9 is a graph of different JGB concentration current density difference (measurement line diagram) of CuSO4: 0.8M, H2SO4: 0.5M, Cl: 46 ppm, MPSA: 5 ppm, PEG: 90 ppm, 1000 rpm mixed formula.

Figure 10 is a graph showing different PEG concentration profiles of mixed formulas at a constant voltage of 1000 rpm for CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl: 46 ppm, MPSA: 5 ppm, 2-MP: 2 ppm.

Figure 11 is a plot of average PEG concentration average current density and deposition thickness for CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl: 46 ppm, MPSA: 5 ppm, 2-MP: 2 ppm, 1000 rpm blending formulation.

Figure 12 is a graph showing the difference in current density of different PEG concentrations of CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ^- : 46 ppm, MPSA: 5 ppm, 2-MP: 2 ppm, mixed formula of 1000 rpm (check-line diagram) .

Hereinafter, a preferred embodiment of the present invention will be further described in detail with reference to the drawings as follows: Firstly, in a preferred embodiment of the present invention, the rapid quantitative method for monitoring the content of the additive in the micro-electroplating of the electronic component can monitor the concentration change of the additive in the plating solution, and then can determine the metal plating deposition filling effect of the electronic component by using the concentration change of the additive. Whether it is appropriate, the method is mainly based on the constant voltage condition, the on-line rapid monitoring of the current density difference of the additive in the plating solution is compared with the calibration curve to determine whether it exceeds (less than or greater than) a predetermined value to know whether the additive concentration is normal.

The pre-existing predetermined value refers to the difference between the electroplating mother liquor without additive and the electroplating solution with the additive added to the critical point additive, respectively, after the predetermined time of electroplating, and the critical point refers to the additive content which can completely suppress the reduction current density, and the plating mother liquor It is a sulfuric acid type plating solution, such as a high copper low acid plating solution, and the additive contains a fixing inhibitor (PEG), a gloss agent (MPSA), and a leveling agent (JGB or 2MP).

Hereinafter, the experimental contents and related conditions and data of the rapid quantitative method of the present invention are as follows: First, a high copper low acid solution (CuSO ₄ : 0.8 M, H ₂ SO ₄ : 0.5 M, Cl ⁻ : 46 ppm) is used as a supply. Analytical plating mother liquor, using additives such as sodium 3-mercapto-1-propanesulfonate (MPSA), leveling agent (Janus Green B, JGB, 2-Mercaptopyridine, 2-MP) and inhibitor (Polyethylene glycol, PEG) -10000), fixed inhibitor (90 ppm) and leveling agent (2 ppm) to change the concentration of the gloss agent MPSA, using an electrochemical analyzer for constant voltage analysis, and performing a 100-second rapid monitoring plating at a constant potential (-0.23 V). As shown in Fig. 1, the average current density value and the standard deviation are calculated in the range of 40 seconds to 100 seconds. As shown in Table 1, the deposition rate of the film can be obtained by dividing the film thickness measured by the surface profiler by the plating time. As shown in Figure 2.

The current density curve of Table 1 can be used to make a calibration curve of the current density difference (difference between the mother liquid current values) of FIG.

In Fig. 1 (4-32), it can be seen from the position of the constant voltage of -0.23 V that the amount of MPSA added does not differ greatly in the amount of current density in the mixed formula. When the additive MPSA content is more, it is found that the current density amount seems to be slightly increased by the MPSA addition content. Through the curve of the current density value of Figure 2, it can be clearly seen that the curve consists of two slopes, one is MPSA (3ppm~12ppm) with sufficient concentration, and the other is MPSA (0~1ppm) with insufficient concentration. As the concentration of MPSA increases, the thickness of copper deposits also increases. At the concentration of 3~12ppm, the cathode current density and copper film thickness (or deposition rate) show an approximate two-stage linear increase, and the thickness of the copper film can reach 5μm or more, so this section can be calculated at constant temperature (25°C) and 1000rpm The reduction rate constant, because the reduction deposition rate determines the control step is the reduction of copper ions to cuprous ions, the amount of cuprous ions is proportional to the concentration of MPSA.

It can be monitored from Fig. 1 that the additive is reduced in the real plating solution corresponding to the actual pore filling pattern at the time of wafer plating, and the current density difference calibration line (Fig. 3) is used to quickly judge whether the deposition filling effect is appropriate. Therefore, using this quick and simple principle, the average current density value of MPSA (0ppm) & PEG & 2-MP is compared with the average current density value of MPSA (1.8ppm) & PEG & 2-MP (if it is the critical point), and the current density The difference is about 2.55854×10-5Amps/cm2, and the difference can be used as the basis for whether the concentration of the plating solution (MPSA) is normal, as long as the difference is less than 2.55854×10-5Amps/cm2 (predetermined value mentioned above). At the time, it means that the MPSA has some shortcomings or will be consumed, and it is necessary to add a sufficient amount of MPSA in the plating solution.

Secondly, if the concentration of the leveling agent 2MP is changed by the same plating mother solution fixing inhibitor PEG (90 ppm) and the gloss agent MPSA (5 ppm), the rapid monitoring plating is performed at a constant potential (-0.23 V) for 100 seconds, as shown in FIG. And taking 40 seconds to 100 seconds to do the average current density value, the standard difference, as shown in Table 2, and then the film thickness measured by the surface profile meter divided by the plating time can be obtained as shown in Figure 5.

The current density difference check line graph of Figure 6 can be made via the current density values of Table 2.

It can be seen from Fig. 4 that when all the additives are not added, the current density is large, but the plating effect is not good (the plating layer is not smooth and smooth); when only MPSA & PEG is added, the current density is increased, and the deposition state is accelerated; When the mixed formula is added with 2MP 0.25ppm, it is slightly inhibited for 5 seconds, but then the current density is steeper and larger; when 2MP is added to 0.5ppm, it is obviously suppressed to 70 seconds after the steep current density is generated; When added to 0.8 ppm or more, the current density can be suppressed in 100 seconds. In other words, it can be presumed that when 2MP is added at 0.25 ppm, the 2MP content is insufficient to cover the required adsorption strength of the full rotating electrode, so that the reduction cannot be completely suppressed, and the current density amount tends to increase. However, when 2MP is added to 0.5ppm, inhibition occurs at the beginning, but after 60 seconds, the 2MP sheet structure may be reversed by the rotation speed process and cannot uniformly adsorb the rotating electrode. It is estimated that the 2MP content is still insufficient, resulting in 70 seconds. Current is generated. When 0.8 ppm or more is added, the 2MP content is sufficient to allow the measurement at a constant potential to completely suppress the amount of reduction current density.

From Fig. 5, the curve composed of two slopes can be clearly seen, one is 2MP (0.8~3ppm) with sufficient concentration under mixed formula, and the other is 2MP (0~0.5ppm) with insufficient concentration under mixed formula. 2MP concentration increases, copper deposition The thickness of the film is also reduced. When the concentration of 2MP is 0.8~3ppm, the cathode current density and the thickness of the copper film (or deposition rate) are approximately linear, and the thickness of the copper film can reach 0.01μm or more, so the temperature can be calculated at a constant temperature (25°C). From the reduction rate constant of this section, it is obvious that the boundary layer characteristics will change greatly due to the concentration. Therefore, as in the case of a constant voltage condition, when the additive is monitored in FIG. 4 to be reduced in the actual plating solution, corresponding to the actual hole filling pattern at the time of wafer plating, the magnitude of the current density difference can be utilized, as shown in FIG. It is quick to judge whether the deposition filling effect is appropriate. Therefore, the MPSA& PEG & 2-MP (0 ppm) curve is compared with the current density of the MPSA & PEG & 2-MP (0.6 ppm) curve, and the current density difference is about 0.0082. Amps/cm2, can use this difference as the basis for the normal concentration of the leveling agent (2MP) in the plating solution. As long as the current density difference is less than 0.0082 Amps/cm2 (predetermined value), it means that 2MP is insufficient or will be consumed. After that, you need to add enough 2MP in the plating solution.

Furthermore, if the concentration of the leveling agent (JGB) is changed by the same plating mother solution fixing inhibitor PEG (90 ppm) and the gloss agent MPSA (5 ppm), a 100 second rapid monitoring plating is performed at a constant potential (-0.23 V), such as Figure 7 (4-41), and take the final current density value, as shown in Table 3, and then the film thickness measured by the surface profilometer divided by the plating time can be obtained as shown in Figure 8.

As shown in Fig. 7, when JGB is not added, it can be seen that the current density is always growing; when adding JGB 1ppm, it is slightly suppressed than when it is not added, but the current density is slowly growing; when JGB is added to 2ppm , it is more obvious to suppress the current density; when added to more than 5ppm, the current density can be strongly suppressed. We speculate that when the JGB addition amount is less than 5 ppm, no adsorption is applied to cover the full rotating electrode, so that a current density amount is generated. And through the curve of the current density value of Fig. 8, it can be clearly seen that the curve consists of two approximate straight lines, one is JGB (5~10ppm) with sufficient concentration, and one is JGB (0~4ppm) with insufficient concentration, with The thickness of copper deposition increases and the thickness of copper deposits decreases and tends to be gentle. When the JGB concentration is 5~10ppm, the cathode current and copper film thickness (or deposition rate) are approximately linear, and the thickness of copper film can reach more than 0.003μm. Under constant voltage conditions, when the additive JGB is reduced in the real plating solution by Figure 7, it is reflected in the actual pore filling pattern at the time of wafer plating, and the current density difference (see Figure 9) can be used to quickly To determine whether the deposition fill effect is appropriate, therefore, the MPSA& PEG & JGB (0 ppm) curve is compared with the current density of the MPSA & PEG & JGB (4.2 ppm) curve, and the cathode current density difference is about 0.0054 Amps/cm 2 . This difference is used as the basis for whether the concentration of the plating solution (JGB) is normal, as long as the difference in current density is less than When 0.0054Amps/cm2 (predetermined value), it means that the JGB is insufficient or will be consumed. It is necessary to add a sufficient amount of JGB in the plating solution.

In addition, if the concentration of the inhibitor PEG is changed by the same plating mother liquid fixing leveling agent 2MP (2 ppm) and the gloss agent MPSA (5 ppm), the rapid monitoring plating is performed at a constant potential (-0.23 V) for 100 seconds, as shown in Fig. 10 ( 4-46), and take the average current density value and standard deviation for 40 seconds to 100 seconds. As shown in Table 4, the film thickness measured by the surface profilometer is divided by the plating time to obtain the deposition rate of the film. Shown.

As shown in Figure 10, when the PEG was not added in the mixed formula, it can be seen that the current density amount has been increasing; when adding PEG 3ppm, it has slightly suppressed a little when it is not added; when it is added to 5ppm, there is It is more obvious that the current density is suppressed; when it is added to 10 ppm or more, the current density is suppressed. It is presumed that when the amount of PEG added is less than 10 ppm, the PEG does not cover the full rotating electrode, so that a current density amount is generated.

From Figure 11, we can see the curve of two approximate linear slopes, one is PEG (20~90ppm) with sufficient concentration, and the other is PEG (0~10ppm) with insufficient concentration. The thickness of copper deposition increases with the concentration of PEG. With decreasing and tending to be gentle, and the PEG concentration is 20~90ppm, the cathode current density and the copper film thickness (or deposition rate) are approximately linear, and the thickness of the copper film can reach 0.8μm or more. Therefore, the current density of the MPSA& 2MP & PEG (0 ppm) curve is compared with the MPSA & 2MP & PEG (11 ppm) curve at a constant voltage, and the current density difference is about 0.0146 Amps/cm2. Whether the concentration of the plating solution inhibitor (PEG) is normal, as long as the current density difference is less than 0.0146 Amps/cm2 (predetermined value), it means that the PEG has been insufficient or will be consumed, and a sufficient amount of PEG needs to be added. In the plating solution.

Therefore, if the difference in current density of the standard formulation is used as a reference, the difference in current density will be negative when the amount of MPSA is small, and when the amount of inhibitor (PEG) or leveling agent (JGB or 2MP) is small, The difference in current density becomes positive, so it is possible to initially determine which additive is less, and further change the current density difference caused by the small amount of time corresponding to the previously performed calibration curve map. What kind of additives, and what amount is missing, can be added at any time. Generally, it is important to add a small amount of the plating solution additive to the gloss agent (MPSA) or the leveling agent, and it is important to affect the coating configuration, so it is necessary to supplement it with great care.

In addition, copper plating is performed on holes having different aspect ratio holes, and the filling pattern of the surface plating and the hole plating of the wafer is analyzed after electroplating to compare the filling method of the present invention with different holes to fill the shape and the calibration curve. Proof: Use high copper low acid plating mother liquor (deep pore formula) (CuSO ₄ .5H ₂ O: 0.8ppm, H ₂ SO ₄ : 0.5ppm, Cl ^- : 46ppm), add additives to the mixed formula, such as: 2- MP (leveling agent): 2 ppm, PEG (inhibitor): 90 ppm, MPSA (gloss agent): 5 ppm was sequentially added to the mother liquor, and the effect of the formulation on the plating plating of the wafer was observed under the addition of different amounts of additives. During the electroplating process, the jet pump is opened all the way to maintain the strong convection circulation state of the plating solution in the plating bath, so that the surface of the coating has better shear flow uniformity to ensure sufficient uniform concentration reaction of the wafer surface with copper sulfate and additives. . The relationship between the thickness and the plating time is calculated by Faraday's law, and the plating time is set. The theoretical thickness value is set to 8 μm, the current is 0.06 A (0.01 Amps/cm ² ) (deep hole formulation), and the wafer is cut into a desired plating area of about 6 cm. ² , and the whole process of the electroplating process is controlled at 25 ° C. There are three main types of electroplating current supply methods: DC plating, pulse plating (PP) and reverse pulse plating (PR). The present invention uses DC plating. Because of its stable current and easy operation, it meets the rapid deposition needs of the commercial world.

Annex 1 is an SEM image of the surface of the wafer and the surface of the micropores (pore size: 140 μm) at different 2-MP concentrations in the plating mother liquor fixing formulation (MPSA: 5 ppm, PEG: 90 ppm). The crystal grain size of copper can be found from the surface 5000X magnification, and the copper crystal grain knot increases with the increase of 2-MP content in the base mother liquor. The crystal diameter is reduced, and the crystal grains are less obvious. At a high magnification of 20000X, the particle morphology is more obvious. When 2-MP 0.25ppm copper crystals are added, the crystals are irregular, the size and height are large, and the shape is polygonal and broken. And the intergranular arrangement is loose and not dense, but when 2-MP is added to 0.8ppm and 3ppm, the crystallization of the particles gradually becomes smaller, the shape becomes smooth and the distance between crystal grains becomes gradually denser, but the grain shape is less obvious. .

The second part is the SEM image of the microporous profile (pore diameter: 40μm-140μm, pore depth: 50μm) of different 2-MP concentrations under electroplating mother liquor fixing formula (MPSA: 5ppm, PEG: 90ppm). It can be seen from the figure that when the 2-MP content in the formulation changes, the deposition in the micropores can be roughly divided into two forms, one is that the pore size is small (the aspect ratio is large), the copper is easy to deposit, and the RDT value is large; It is a large aperture (small aspect ratio), copper is not easy to deposit, and the RDT value is small. When 2-MP 0.25ppm is added to the plating solution, micropores with pore diameters of 40μm to 60μm can effectively deposit copper, but it is easy to cause voids in the coating, and the pore diameter The 70μm micropores form an inverted conformation and the RDT value is small. It is obvious that the 2-MP content in this formula is seriously insufficient. Although the copper can be deposited rapidly in the pores with large aspect ratio, the lack of 2-MP inhibition in the cave wall is easy. The voids appear, and the copper structure is loose and not dense, and it is easy to have spalling. It can be confirmed with the surface grain structure mentioned above, and the pores with small aspect ratio may be damaged due to large shear, MPSA is not easy to accumulate and 2-MP will also Infiltration, forming a layer of barrier layer, is not conducive to copper deposition, forming a thicker surface layer and a thinner pore. It is known from the literature that the deposition type of this formulation is an inverse configuration, and the deposition rate on both sides of the surface and the pores. Higher than the bottom of the hole, it is easy to have holes. When 2-MP0 8ppm and 3ppm are added to the plating solution, the copper filling effect is better than 0.25ppm, and the pore diameter is better. 70μm micropores can be effectively filled, and the filling effect is also more obvious than 0.25ppm, indicating that 2-MP has significant function in the two formulations, competing with MPSA to reduce the rate of surface layer copper deposition, achieving a perfect filling type. State, although the filling effect of the two formulas is better than 0.25ppm, it is obviously different from each other. The 0.8ppm formula gradually decreases with the aspect ratio, and the copper deposits in the micropores are in a configuration state, representing the surface and the inside of the pores. As with the deposition rate at the bottom of the hole, the result of the seam may eventually be produced, and the deposition of the 3 ppm formulation is an ultra-filled type. From the micropores with a pore size of 40 μm to 80 μm, it can be seen that the deposition effect is filled from the bottom to the top, due to the bottom of the hole. The deposition rate is much higher, and this perfect filling pattern can be produced, and this type is in line with the results expected by our experiments (as shown by the pore size of 40 μm micropores).

The foregoing results show that different pore filling patterns can be mutually verified with the calibration curve of the present invention, which can speed up the judgment of on-site industrial electroplating and add different additives.

Through the analysis of the above various additives, it can be proved that the rapid quantitative method for monitoring the content of the micro-electroplating monitoring additive of the electronic component provided by the invention can be monitored by the calibration curve under the condition of plating environment of constant voltage. Quickly measure the change of additive concentration, judge the degree of additive consumption, and quickly supplement the insufficient addition amount, which can simplify the old complicated and complicated analysis program to save time and cost, and can be extended to other metal micro Electroplating, such as tin, nickel and other metals. Secondly, the present invention analyzes the current density value under a plating environment of a constant voltage, compared to the conventional constant current mode. The voltage is subject to the change of the additive content, and the floating variation is large, which is difficult to be quickly monitored. The invention obviously has better stability.

Claims (7)

A rapid quantitative method for monitoring the content of additives in electronic components by micro-plating, which can monitor the concentration change of additives in the plating solution, mainly by using the principle of additive convection adsorption (CDA), and monitoring the additives in the plating solution under constant voltage conditions. The current density difference is compared with the calibration curve to determine whether it exceeds a predetermined value to quickly know whether the additive concentration is normal, and thereby determine whether the metal plating deposition filling effect is appropriate. A rapid quantitative method for monitoring the content of an additive for an electronic component micro-plating according to claim 1, wherein the difference in current density of the additive in the plating solution is monitored on the line to be less than or greater than the predetermined value. The rapid quantitative method for monitoring the content of the micro-electroplating monitoring additive of the electronic component according to claim 2, wherein the predetermined value refers to a plating mother liquid without an additive and a plating solution having a critical point additive added, respectively, after plating for a predetermined time The current value is poor. The rapid quantitative method for monitoring the content of the micro-electroplating monitoring additive of the electronic component described in claim 3, wherein the critical point refers to an additive content capable of completely suppressing the reduction current density. The rapid quantitative method for monitoring the content of the micro-electroplating monitoring additive of the electronic component described in claim 3, wherein the plating mother liquid is a sulfuric acid type plating solution, and the additive comprises a fixing inhibitor (PEG), a gloss agent (MPSA), and a leveling agent ( JGB or 2MP). The rapid quantitative method for monitoring the content of the micro-electroplating monitoring additive of the electronic component described in claim 3, wherein the plating mother liquid is a high-copper low-acid plating solution. The electronic component micro-plating monitoring additive according to item 5 of the patent application scope includes A rapid quantitative method in which the current density difference is negative when the gloss dose is small, and the current density difference is positive when the inhibitor or the leveling dose is small.