TW201640976A - Stacked electronic device and method for fabricating the same - Google Patents

Abstract

The disclosure provides a method for fabricating a stacked electronic device. A first three-dimensional (3D) printing is performed to form a first insulating layer and a plurality of first redistribution layers (RDLs) on a first substrate. A second 3D printing is performed to form a second substrate and a plurality of through substrate vias (TSVs) on the first insulating layer, wherein the plurality of TSVs is electrically connected to the first RDLs. A third 3D printing is performed to form a second insulating layer and a plurality of second RDLs on the second substrate, wherein the plurality of second RDLs is electrically connected to the plurality of TSVs. A plurality of contacts of a third substrate is bonded to the second RDLs, such that the third substrate is mounted onto the second insulating layer. The disclosure also provides a stacked electronic device formed by such a method.

Description

Stacked electronic device and method of manufacturing same

This invention relates to a semiconductor technology, and more particularly to a method of fabricating a stacked electronic device using three dimensional printing techniques.

Due to the advancement of semiconductor technology, the integration of integrated circuits or the density of electronic components (eg, transistors, diodes, resistors, capacitors, etc.) is increasing. In order to increase the integration of integrated circuits, three-dimensional integrated circuits (3DIC) have been developed. Generally, the three-dimensional integrated circuit can be used as an electrical connection path through a through-substrate via (TSV) to realize a wafer or wafer stack structure, thereby achieving the purpose of increasing the accumulation degree.

In a three-dimensional integrated circuit process, a wafer and a substrate (eg, a wafer, a wafer, or a printed circuit board) or a wafer and a substrate are bonded to each other, and electrical properties are formed between each wafer/wafer and a contact on the substrate. connection. Moreover, a typical via via electrode is fabricated by dry etching or laser forming a via hole in a substrate (eg, a wafer or wafer) and filled with a conductive material into the bore. Next, the substrate is stacked with other wafers/wafers and carrier substrates, and a substrate thinning process is performed by chemical mechanical polishing (CMP) to make the holes become through holes and expose the filled conductive material to form a substrate. Through hole electrode. Finally, the carrier substrate is removed to form a three-dimensional stacked electronic device. Compared to traditional In the case of wire-bonded electronic devices, a three-dimensional stacked electronic device having a substrate via electrode can shorten the internal electrical connection path, thereby increasing the transmission speed of the device, reducing noise, and improving device performance.

However, as described above, the fabrication of the via via electrodes includes the steps of drilling, drilling the conductive material, thinning the substrate, and removing the carrier substrate, thereby failing to effectively shorten the manufacturing time, simplify the process steps, and reduce the manufacturing cost. Therefore, it is necessary to find a manufacturing method of a stacked electronic device which can improve the above problems.

An embodiment of the present invention provides a method of manufacturing a stacked electronic device, including: providing a first substrate; performing a first three-dimensional printing to form a first insulating layer and a plurality of first redistributing layers on the first substrate, The first redistribution layer is embedded in the first insulating layer; performing a second three-dimensional printing to form a second substrate and a plurality of substrate via electrodes on the first insulating layer, wherein the substrate via electrodes penetrate the second substrate And electrically connecting to the first redistribution layer; performing a third three-dimensional printing to form a second insulating layer and a plurality of second redistribution layers on the second substrate, wherein the second redistribution layer is embedded in the second insulation And electrically connecting to the substrate via electrode; and bonding the plurality of contacts of the third substrate to the second redistribution layer to mount the third substrate on the second insulation layer.

Another embodiment of the present invention provides a stacked electronic device including: a first substrate; a first insulating layer and a plurality of first redistribution layers disposed on the first substrate, wherein the first redistribution layer is embedded in the first insulation a second substrate and a plurality of substrate via electrodes disposed on the first insulating layer, wherein the substrate via electrodes penetrate the second substrate and are electrically connected to the first redistribution layer; The insulating layer and the plurality of second redistribution layers are disposed on the second substrate, wherein the second redistribution layer is embedded in the second insulating layer and electrically connected to the substrate via electrode; and a third substrate is mounted on the On the two insulating layers, wherein the third substrate has a plurality of contacts bonded to the second redistribution layer. The first insulating layer, the first redistribution layer, the second substrate, the base via electrode, the second insulating layer, and the second redistribution layer are formed by a material used for three-dimensional printing.

10‧‧‧3D printer

10a‧‧‧First print head

10b‧‧‧Second print head

20‧‧‧ first three-dimensional printing

20’‧‧‧Second 3D printing

20"‧‧‧ Third 3D printing

100‧‧‧ first base

102‧‧‧First insulation

104‧‧‧First redistribution layer

106‧‧‧Second substrate

108‧‧‧Based through hole electrode

110‧‧‧Second insulation

112‧‧‧Second red wiring layer

200‧‧‧Stacked electronic devices

300‧‧‧ method

301, 303, 305, 307, 309‧ ‧ steps

1A to 1D are cross-sectional views showing a method of manufacturing a stacked electronic device according to an embodiment of the present invention.

2 is a flow chart showing a method of fabricating a stacked electronic device in accordance with an embodiment of the present invention.

Hereinafter, a method of manufacturing a stacked electronic device according to an embodiment of the present invention will be described. However, the present invention is to be understood as being limited to the details of the present invention.

Please refer to FIG. 1D, which is a cross-sectional view of a stacked electronic device according to an embodiment of the invention. The stacked electronic device 200 includes a first substrate 100, a first insulating layer 102, a plurality of first redistribution layers (RDLs) 104, a second substrate 106, a plurality of substrate via electrodes 108, and a second insulation. The layer 110, the plurality of second redistribution layers 112, and a third substrate 130. In an embodiment, the first substrate 100 can be a printed circuit board, a wafer, a wafer, or a combination thereof.

The first insulating layer 102 and the first redistribution layer 104 are disposed at the first On the substrate 100, the first redistribution layer 104 is embedded in the first insulating layer 102 and electrically connected to the contacts (not shown) of the first substrate 100. The contacts of the first substrate 100 may include pads, solder bumps, conductive pillars, or a combination thereof. Here, for the simplified drawing, the first redistribution layer 104 is represented by only two single-layer conductive structures. However, it should be noted that the first redistribution layer 104 may be a single layer or a plurality of layers of conductive structures, and the number of the first redistribution layers 104 may be limited to the design requirements and is not limited to the 1D diagram.

In the present embodiment, the first insulating layer 102 and the first redistribution layer 104 are formed by a material used for three-dimensional printing. For example, the first insulating layer 102 includes a ceramic material, a polymer material, a resin material, or a dielectric material suitable for three-dimensional printing technology. Furthermore, the first redistribution layer 104 comprises a conductive metal suitable for three-dimensional printing techniques, such as aluminum, copper, gold, lead-free solder or alloys thereof or other metal alloys.

The second substrate 106 and the substrate via electrode 108 are disposed on the first insulating layer 104 , wherein the substrate via electrode 108 penetrates the second substrate 106 and is electrically connected to the first redistribution layer 104 . Here, for the simplified drawing, only two base via electrodes 108 are shown. However, it should be noted that the number of substrate via electrodes 108 may depend on design requirements and is not limited to that shown in FIG. 1D.

In this embodiment, there are no active or passive components within the second substrate 106. Furthermore, the second substrate 106 and the substrate via electrode 108 are formed by a material used for three-dimensional printing. For example, the second substrate 106 includes a molding compound material, a ceramic material, a polymer material, a resin material, or a dielectric material suitable for three-dimensional printing technology. Further, the substrate via electrode 108 includes a conductive metal suitable for three-dimensional printing techniques, such as tungsten, aluminum, copper, gold, lead-free solder or alloys thereof, or other metal alloys. In other embodiments, The second substrate 106 can comprise a semiconductor material such as tantalum or niobium. In this case, the stacked electronic device 200 further includes an insulating spacer to electrically isolate the second substrate 106 from the substrate via electrode 108. The insulating spacer layer comprises a ceramic material, a polymer material, a resin material or a dielectric material suitable for three-dimensional printing technology.

The second insulating layer 110 and the second redistribution layer 112 are disposed on the second substrate 106 , wherein the second redistribution layer 112 is embedded in the second insulating layer 110 and electrically connected to the substrate via electrode 108 . Here, to simplify the drawing, the second redistribution layer 112 is represented by only two single-layer conductive structures. However, it should be noted that the second redistribution layer 112 may be a single layer or a plurality of layers of conductive structures, and the number of the second redistribution layers 112 may be limited to the design requirements and is not limited to the 1D diagram.

In the present embodiment, the second insulating layer 110 and the second redistribution layer 112 are formed by a material used for three-dimensional printing. For example, the second insulating layer 110 includes a ceramic material, a polymer material, a resin material, or a dielectric material suitable for three-dimensional printing technology. Furthermore, the second redistribution layer 112 comprises a conductive metal suitable for three-dimensional printing techniques, such as aluminum, copper, gold, lead-free solder or alloys thereof or other metal alloys.

The third substrate 130 is mounted on the second insulating layer 110. In this embodiment, the third substrate 130 can be a wafer, a wafer, or a combination thereof. Furthermore, the third substrate 130 has a plurality of contacts 120 bonded to the second redistribution layer 112. Contact 120 can include pads, solder bumps, conductive posts, or a combination thereof, and solder bumps are exemplified herein.

1A to 1D and FIG. 2, wherein FIGS. 1A to 1D are schematic cross-sectional views showing a method of manufacturing a stacked electronic device according to an embodiment of the present invention, and FIG. 2 is a diagram showing Heap of an embodiment of the invention A flow chart of a method 300 of manufacturing an electronic device. In the present embodiment, the method 300 begins in step 301 by providing a first substrate 100 as shown in FIG. 1A. In an embodiment, the first substrate 100 can be a printed circuit board, a wafer, a wafer, or a combination thereof. The first substrate 100 can have a plurality of contacts (not shown), such as pads, solder bumps, conductive posts, or a combination thereof.

Then, referring to FIGS. 1A and 2, step 303 is performed to perform a first three-dimensional printing 20 through a three-dimensional printer 10 to form a first insulating layer 102 and a plurality of first weights on the first substrate 100. The wiring layer 104 is embedded in the first insulating layer 102 and electrically connected to the contacts (not shown) of the first substrate 100. In the present embodiment, the three-dimensional printer 10 may have multiple print heads to form the first insulating layer 102 and the first redistribution layer 104 simultaneously after the first three-dimensional printing 20 is performed. For example, during the first three-dimensional printing 20, the three-dimensional printer 10 moves back and forth along a direction parallel to the first substrate 100, and the first insulating layer 102 is formed by the first printing head 10a, and the first insulating layer 102 is used. The print head 10b is printed in two to form the first redistribution layer 104. In the present embodiment, the first insulating layer 102 includes a ceramic material, a polymer material, a resin material, or a dielectric material. Further, the first redistribution layer 104 includes a conductive metal such as aluminum, copper, gold or an alloy thereof or other metal alloy.

Next, referring to FIGS. 1B and 2, step 305 is performed to perform a second three-dimensional printing 20' similar to the first three-dimensional printing 20 through the three-dimensional printing machine 10 to form a first insulating layer 102. The second substrate 106 and the plurality of substrate via electrodes 108, wherein the substrate via electrodes 108 penetrate the second substrate 106 and are electrically connected to the first redistribution layer 104. In the present embodiment, after the second three-dimensional printing 20' is performed, the second substrate 106 and the substrate via electrode 108 can be simultaneously formed. For example, during the second three-dimensional printing 20', the three-dimensional printer 10 utilizes the first print head 10a to form the second substrate 106, and the second print head 10b forms the base via electrode 108. In the present embodiment, the second substrate 106 includes a molding material, a ceramic material, a polymer material, a resin material, or a dielectric material. Furthermore, the via via electrode 108 comprises a conductive metal such as tungsten, aluminum, copper, gold, lead-free solder or alloys thereof or other metal alloys. In the present embodiment, the formed second substrate 106 can have a desired thickness by adjusting the time of the second three-dimensional printing 20'. Furthermore, the formed via via electrode 108 is exposed on the surface thereof through the second substrate 106. Therefore, the substrate via electrode 108 is formed without adjusting the thickness of the second substrate 106 by any polishing process (for example, CMP).

In other embodiments, the second substrate 106 can comprise a semiconductor material suitable for three-dimensional printing techniques, such as tantalum or niobium. In this case, the three-dimensional printer 10 can include at least three printing heads, and the second three-dimensional printing 20' further includes forming an insulating spacer to electrically isolate the second substrate 106 from the substrate via electrodes 108. The insulating spacer layer includes a ceramic material, a polymer material, a resin material, or a dielectric material.

Next, referring to FIGS. 1C and 2, step 307 is performed to perform a third three-dimensional printing 20" similar to the first three-dimensional printing 20 through the three-dimensional printing machine 10 to form a second on the second substrate 106. The insulating layer 110 and the plurality of second redistribution layers 112, wherein the second redistribution layer 112 is embedded in the second insulating layer 110 and electrically connected to the substrate via electrode 108. In this embodiment, the third three-dimensional column is performed. After the stamp 20", the second insulating layer 110 and the second redistribution layer 112 may be simultaneously formed. For example, during the third three-dimensional printing 20", the three-dimensional printer 10 uses the first printing head 10a to form the second insulating layer 110, and utilizes the second column. The head 10b is printed to form the second redistribution layer 112. In the present embodiment, the second insulating layer 110 may include the same or different material than the first insulating material 102. Furthermore, the second redistribution layer 112 may include the same or different material than the first redistribution layer 104.

Next, referring to FIGS. 1D and 2, step 309 is performed to bond the plurality of contacts 120 of the third substrate 130 to the second redistribution layer 112, and the third substrate 130 is mounted on the second insulating layer 110. In this embodiment, the third substrate 130 can be a wafer, a wafer, or a combination thereof. Further, the contacts 120 can include pads, solder bumps, conductive posts, or a combination thereof. For example, the third substrate 130 is a wafer and the contacts 120 are solder bumps. Further, the contact 120 is bonded to the second redistribution layer 112 by a flip chip technique.

According to the above embodiment, the first insulating layer 102 and the first redistribution layer 104, the second substrate 106 and the via via electrodes 108, and the second insulating layer 110 and the second redistribution layer 112 are sequentially printed through three-dimensional printing. Therefore, the manufacturing time of the stacked electronic device can be effectively shortened. In addition, the use of three-dimensional printing to fabricate the via-hole electrode eliminates the gap-filling difficulty caused by the aspect ratio, thereby obtaining a highly reliable substrate via electrode. Furthermore, compared with the conventional substrate via electrode fabrication, the use of three-dimensional printing to form the substrate via electrode does not require additional steps of drilling, drilling the conductive material, thinning the substrate, and removing the carrier substrate. It effectively simplifies the process steps and reduces manufacturing costs while eliminating the technical problems caused by the above additional steps.

Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can be modified and retouched without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

300‧‧‧ method

301, 303, 305, 307, 309‧ ‧ steps

Claims (14)

A method for manufacturing a stacked electronic device includes: providing a first substrate; performing a first three-dimensional printing to form a first insulating layer and a plurality of first redistribution layers on the first substrate, wherein the first a redistribution layer is embedded in the first insulating layer; performing a second three-dimensional printing to form a second substrate and a plurality of substrate via electrodes on the first insulating layer, wherein the substrate via electrodes penetrate the first a second substrate and electrically connected to the first redistribution layer; performing a third three-dimensional printing to form a second insulating layer and a plurality of second redistribution layers on the second substrate, wherein the second weight a wiring layer is embedded in the second insulating layer and electrically connected to the substrate via electrodes; and a plurality of contacts of a third substrate are bonded to the second redistribution layers, and the third substrate is mounted on the second substrate On the second insulating layer. The method of manufacturing a stacked electronic device according to claim 1, wherein the first substrate comprises: a printed circuit board, a wafer, a wafer, or a combination thereof. The method of manufacturing a stacked electronic device according to claim 1, wherein the first insulating layer and the second insulating layer comprise a ceramic material, a polymer material, a resin material or a dielectric material. The method of manufacturing a stacked electronic device according to claim 1, wherein the first redistribution layer and the second redistribution layer comprise aluminum, copper, gold or an alloy thereof. A method of manufacturing a stacked electronic device according to claim 1, wherein The second substrate includes a molding material, a ceramic material, a polymer material, a resin material, or a dielectric material. The method of manufacturing a stacked electronic device according to claim 1, wherein the second substrate comprises a semiconductor material, and the manufacturing method further comprises forming an insulating spacer layer to electrically isolate the second substrate from the substrates Through hole electrode. The method of manufacturing a stacked electronic device according to claim 1, wherein the substrate via electrodes comprise tungsten, aluminum, copper, gold, lead-free solder or alloys thereof. The method for manufacturing a stacked electronic device according to claim 1, wherein the three-dimensional printer for performing the first three-dimensional printing, the second three-dimensional printing, and the third three-dimensional printing has at least two The print heads are printed such that at least two different materials are simultaneously formed during each three-dimensional print. A stacked electronic device includes: a first substrate; a first insulating layer and a plurality of first redistribution layers disposed on the first substrate, wherein the first redistribution layer is embedded in the first insulating layer; a second substrate and a plurality of substrate via electrodes are disposed on the first insulating layer, wherein the substrate via electrodes penetrate the second substrate and are electrically connected to the first redistribution layer; a second insulating layer And a plurality of second redistribution layers disposed on the second substrate, wherein the second redistribution layers are embedded in the second insulating layer and electrically connected to the substrate via electrodes; and a third substrate, Mounted on the second insulating layer, wherein the third substrate has Bonding a plurality of contacts to the second redistribution layer; wherein the first insulating layer, the first redistribution layer, the second substrate, the substrate via electrodes, the second insulating layer, and the The double wiring layer is formed by the materials used for three-dimensional printing. The stacked electronic device of claim 9, wherein the first insulating layer and the second insulating layer comprise a ceramic material, a polymer material, a resin material or a dielectric material. The stacked electronic device of claim 9, wherein the first redistribution layer and the second redistribution layer comprise aluminum, copper, gold, lead-free solder or alloys thereof. The stacked electronic device of claim 9, wherein the second substrate comprises a molding material, a ceramic material, a polymer material, a resin material or a dielectric material. The stacked electronic device of claim 9, wherein the second substrate comprises a semiconductor material, and the stacked electronic device further comprises an insulating spacer to electrically isolate the second substrate from the substrate via electrodes . The stacked electronic device of claim 9, wherein the substrate via electrodes comprise tungsten, aluminum, copper, gold, lead-free solder or alloys thereof.