TW201638786A - Computer apparatuses comprising SSDs (Solid-State Drive) and methods for accessing the SSDs - Google Patents

Computer apparatuses comprising SSDs (Solid-State Drive) and methods for accessing the SSDs Download PDF

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TW201638786A
TW201638786A TW104113166A TW104113166A TW201638786A TW 201638786 A TW201638786 A TW 201638786A TW 104113166 A TW104113166 A TW 104113166A TW 104113166 A TW104113166 A TW 104113166A TW 201638786 A TW201638786 A TW 201638786A
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data
random access
solid state
hard disk
state hard
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TW104113166A
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傅子瑜
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宏碁股份有限公司
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Abstract

An embodiment of a computer apparatus comprising a CPU (Central Processing Unit), a PCH (Platform Controller Hub) chip and a SSD (Solid-State Drive) is introduced. The CPU comprises a north bridge chip and the PCH chip connects the north bridge via a DMI (Direct Media Interface) bus. The PCH chip comprises an AHCI (Advanced Host Controller Interface) and the SSD connects the AHCI. The SSD comprises multiple channels and each channel connects a MRAM (Magnetoresistive Random Access Memory) or a RRAM (Resistive Random Access memory) for random access.

Description

包含固態硬碟的計算機裝置以及存取固態硬碟的方法 Computer device including solid state hard disk and method for accessing solid state hard disk

本發明關連於一種儲存技術,特別是一種包含固態硬碟的計算機裝置以及存取固態硬碟的方法。 The present invention is related to a storage technology, particularly a computer device including a solid state hard disk and a method of accessing a solid state hard disk.

現今固態硬碟(SSDs,Solid-State Drives)皆以NAND型快閃儲存裝置組成。然而,受限於元件的特性(電容式儲存裝置),NAND型快閃儲存裝置的隨機讀取時間為動態隨機存取記憶體(DRAM,Dynamic Random Access Memory)的一千倍以上,例如隨機讀取NAND型快閃儲存裝置4K位元組需50us而隨機讀取動態隨機存取記憶體4K位元組需10ns。因此,固態硬碟在隨機讀取的效率上,有相當大的改善空間。有鑑於此,本發明提出一種固態硬碟以及存取固態硬碟的方法,用解決以上所述的問題。 Today's solid state drives (SSDs, Solid-State Drives) are composed of NAND flash memory devices. However, limited by the characteristics of the components (capacitive storage device), the random read time of the NAND flash memory device is more than one thousand times that of a dynamic random access memory (DRAM), such as random read. It takes 50 us to take the 4K byte of the NAND flash memory device and 10 ns to read the dynamic random access memory 4K byte randomly. Therefore, the solid state hard disk has considerable room for improvement in the efficiency of random reading. In view of this, the present invention proposes a solid state hard disk and a method of accessing a solid state hard disk to solve the above problems.

本發明的實施例提出一種計算機裝置,包含中央處理單元、平台控制集線器晶片以及固態硬碟。中央處理單元包含北橋晶片,並且平台控制集線器晶片透過直接媒體介面匯流排連接北橋晶片。平台控制集線器晶片包含進階主機控制器介面,並且固態硬碟連接進階主機控制器介面。固態硬碟包含 多個通道,以及每一通道連接磁阻式隨機存取記憶體或電阻式隨機存取記憶體用以進行隨機存取。 Embodiments of the present invention provide a computer device including a central processing unit, a platform control hub chip, and a solid state hard disk. The central processing unit includes a north bridge wafer, and the platform control hub chip connects the north bridge wafer through a direct media interface bus. The platform control hub chip contains an advanced host controller interface and the solid state drive is connected to the advanced host controller interface. Solid state hard drive included A plurality of channels, and each channel is connected to a magnetoresistive random access memory or a resistive random access memory for random access.

本發明的實施例提出一種存取固態硬碟的方法,由固態硬碟中之處理單元執行,包含以下步驟。經由進階主機控制器介面接收平台控制集線器晶片所發出的邏輯寫入命令、邏輯寫入位址及待寫入資料。判斷待寫入資料是否為隨機存取資料。當待寫入資料為隨機存取資料時,將資料寫入固態硬碟中之通道連接的磁阻式隨機存取記憶體或電阻式隨機存取記憶體。 Embodiments of the present invention provide a method of accessing a solid state hard disk, executed by a processing unit in a solid state hard disk, comprising the following steps. The logic write command issued by the platform control hub chip, the logical write address, and the data to be written are received through the advanced host controller interface. Determine whether the data to be written is random access data. When the data to be written is random access data, the data is written into the reluctance random access memory or the resistive random access memory connected to the channel in the solid state hard disk.

10‧‧‧計算裝置 10‧‧‧ Computing device

110‧‧‧中央處理單元 110‧‧‧Central Processing Unit

111‧‧‧北橋晶片 111‧‧‧ North Bridge Chip

113‧‧‧動態隨機存取記憶體控制器 113‧‧‧Dynamic Random Access Memory Controller

150‧‧‧動態隨機存取記憶體 150‧‧‧ Dynamic Random Access Memory

160‧‧‧直接媒體介面匯流排 160‧‧‧Direct media interface bus

170‧‧‧平台控制集線器晶片 170‧‧‧ Platform Control Hub Wafer

171‧‧‧進階主機控制器介面 171‧‧‧Advanced Host Controller Interface

173‧‧‧固態硬碟 173‧‧‧ Solid State Drive

175‧‧‧光碟機 175‧‧‧CD player

20‧‧‧固態硬碟 20‧‧‧ Solid State Drive

210‧‧‧處理單元 210‧‧‧Processing unit

220‧‧‧存取介面 220‧‧‧Access interface

230‧‧‧儲存單元 230‧‧‧ storage unit

220_0、220_1、...、220_j‧‧‧存取子介面 220_0, 220_1, ..., 220_j‧‧‧ access subinterface

230_0_0、230_0_1、...、230_j_i‧‧‧儲存子單元 230_0_0, 230_0_1, ..., 230_j_i‧‧‧ storage subunit

420_0_0、...、420_0_i‧‧‧晶片致能控制訊號 420_0_0,...,420_0_i‧‧‧ wafer enable control signal

410_0‧‧‧資料線 410_0‧‧‧Information line

S511~S535‧‧‧方法步驟 S511~S535‧‧‧ method steps

第1圖係依據本發明實施例的計算機裝置的系統方塊圖。 1 is a system block diagram of a computer device in accordance with an embodiment of the present invention.

第2圖係依據本發明實施例之固態硬碟的系統架構示意圖。 2 is a schematic diagram of a system architecture of a solid state hard disk according to an embodiment of the present invention.

第3圖係依據本發明實施例之存取介面與儲存單元的方塊圖。 Figure 3 is a block diagram of an access interface and a storage unit in accordance with an embodiment of the present invention.

第4圖係依據本發明實施例之一個存取子介面與多個儲存子單元的連接示意圖。 Figure 4 is a schematic diagram showing the connection of an access sub-interface and a plurality of storage sub-units according to an embodiment of the present invention.

第5圖係依據本發明實施例之執行於處理單元中之資料寫入方法流程圖。 Figure 5 is a flow chart of a method of writing data in a processing unit in accordance with an embodiment of the present invention.

以下說明係為完成發明的較佳實現方式,其目的在於描述本發明的基本精神,但並不用以限定本發明。實際的發明內容必須參考之後的權利要求範圍。 The following description is a preferred embodiment of the invention, which is intended to describe the basic spirit of the invention, but is not intended to limit the invention. The actual inventive content must be referenced to the scope of the following claims.

必須了解的是,使用於本說明書中的”包含”、”包 括”等詞,係用以表示存在特定的技術特徵、數值、方法步驟、作業處理、元件以及/或組件,但並不排除可加上更多的技術特徵、數值、方法步驟、作業處理、元件、組件,或以上的任意組合。 It must be understood that the "include" and "packages" used in this specification "", etc., is used to mean that there are specific technical features, numerical values, method steps, work processes, components, and/or components, but does not exclude the addition of additional technical features, numerical values, method steps, and operational processing. A component, component, or any combination of the above.

於權利要求中使用如”第一”、"第二"、"第三"等詞係用來修飾權利要求中的元件,並非用來表示之間具有優先權順序,先行關係,或者是一個元件先於另一個元件,或者是執行方法步驟時的時間先後順序,僅用來區別具有相同名字的元件。 The words "first", "second", and "third" are used in the claims to modify the elements in the claims, and are not used to indicate a priority order, an advance relationship, or a component. Prior to another component, or the chronological order in which the method steps are performed, it is only used to distinguish components with the same name.

第1圖係依據本發明實施例的計算機裝置的系統方塊圖。計算機裝置10至少包含中央處理單元110、動態隨機存取記憶體(DRAM,Dynamic Random Access Memory)150以及平台控制集線器晶片(PCH,Platform Controller Hub Chip)170。中央處理單元110可使用多種方式實施,例如以專用硬體電路或通用硬體(例如,單一處理器、具平行處理能力的多處理器、圖形處理器或其他具運算能力的處理器),並且在執行程式碼或軟體時,提供所需的功能。中央處理單元110包含北橋晶片111,使用直接媒體介面(DMI,Direct Media Interface)匯流排160連接平台控制集線器晶片170,而北橋晶片111包含動態隨機存取記憶體控制器113,用以存取動態隨機存取記憶體150中的資料。平台控制集線器晶片170可透過進階主機控制器介面(AHCI,Advanced Host Controller Interface)171存取連接的裝置,例如固態硬碟(SSDs,Solid-State Drives)173、光碟機175等。於此須注意的是,北橋晶片111用以連接高速輸出/ 入裝置,例如,動態隨機存取記憶體、視訊圖形陣列卡等;而平台控制集線器晶片170用以連接低速輸出/入裝置,例如,固態硬碟、光碟機、WiFi通訊模組等。 1 is a system block diagram of a computer device in accordance with an embodiment of the present invention. The computer device 10 includes at least a central processing unit 110, a DRAM (Dynamic Random Access Memory) 150, and a Platform Controller Hub Chip (PCH) 170. The central processing unit 110 can be implemented in a variety of ways, such as with dedicated hardware circuitry or general purpose hardware (eg, a single processor, multiprocessor with parallel processing capabilities, a graphics processor, or other computing capable processor), and Provides the required functionality when executing code or software. The central processing unit 110 includes a north bridge wafer 111, which is connected to the platform control hub wafer 170 using a direct media interface (DMI) bus, and the north bridge wafer 111 includes a dynamic random access memory controller 113 for accessing dynamics. The data in the random access memory 150. The platform control hub chip 170 can access connected devices through an Advanced Host Controller Interface (AHCI) 171, such as Solid State Drives (SSDs) 173, CD players 175, and the like. It should be noted here that the north bridge chip 111 is used to connect the high speed output / The device controls the hub chip 170 for connecting to a low-speed output/input device, for example, a solid-state hard disk, a CD player, a WiFi communication module, or the like.

第2圖係依據本發明實施例之固態硬碟的系統架構示意圖。固態硬碟的系統架構20中包含處理單元210,用以寫入資料到儲存單元230中的指定位址,以及從儲存單元230中的指定位址讀取資料。詳細來說,處理單元210透過存取介面220寫入資料到儲存單元230中的指定位址,以及從儲存單元230中的指定位址讀取資料。系統架構20使用數個電子訊號來協調處理單元210與儲存單元230間的資料與命令傳遞,包含資料線(data line)、時脈訊號(clock signal)與控制訊號(control signal)。資料線可用以傳遞命令、位址、讀出及寫入的資料;控制訊號線可用以傳遞晶片致能(chip enable,CE)、位址提取致能(address latch enable,ALE)、命令提取致能(command latch enable,CLE)、寫入致能(write enable,WE)等控制訊號。存取介面220可採用雙倍資料率(double data rate,DDR)通訊協定與儲存單元230溝通,例如,開放NAND快閃(open NAND flash interface,ONFI)、雙倍資料率開關(DDR toggle)或其他介面。處理單元210另可使用進階主機控制器介面171透過指定通訊協定與平台控制集線器晶片170進行溝通,例如,序列先進技術附著(serial advanced technology attachment,SATA)或其他介面。平台控制集線器晶片170可透過進階主機控制器介面171提供邏輯區塊位址(LBA,Logical Block Address)給處理單元210,用以指示寫入或讀取特定區域的資料。存取介面220為最 佳化資料寫入的效率,可將一段具有連續邏輯區塊位址的資料分散地擺放在不同儲存子單元中的不同區域。因此,需要一個快閃轉譯層表(FTL,Flash Translation Layer table),用以指出每個邏輯區塊位址的資料實際上存放在哪個儲存子單元中的哪個位置的資訊。 2 is a schematic diagram of a system architecture of a solid state hard disk according to an embodiment of the present invention. The system architecture 20 of the solid state drive includes a processing unit 210 for writing data to a specified address in the storage unit 230 and reading data from a specified address in the storage unit 230. In detail, the processing unit 210 writes the data to the specified address in the storage unit 230 through the access interface 220, and reads the data from the specified address in the storage unit 230. The system architecture 20 uses a plurality of electronic signals to coordinate data and command transfer between the processing unit 210 and the storage unit 230, including a data line, a clock signal, and a control signal. The data line can be used to transfer commands, addresses, read and write data; the control signal line can be used to transmit chip enable (CE), address latch enable (ALE), command extraction Control signals such as command latch enable (CLE) and write enable (WE). The access interface 220 can communicate with the storage unit 230 using a double data rate (DDR) protocol, such as an open NAND flash interface (ONFI), a double data rate switch (DDR toggle), or Other interface. The processing unit 210 can also communicate with the platform control hub wafer 170 via a designated communication protocol using an advanced host controller interface 171, such as a serial advanced technology attachment (SATA) or other interface. The platform control hub chip 170 can provide a logical block address (LBA) to the processing unit 210 through the advanced host controller interface 171 to indicate writing or reading data of a specific area. Access interface 220 is the most The efficiency of data writing can spread a piece of data with consecutive logical block addresses in different areas in different storage sub-units. Therefore, a Flash Translation Layer table (FTL) is needed to indicate in which storage sub-unit information the data of each logical block address is actually stored.

儲存單元230可包含多個儲存子單元,每一個儲存子單元實施於一個晶粒(die)上,各自使用關聯的存取子介面與處理單元210進行溝通。第3圖係依據本發明實施例之存取介面與儲存單元的方塊圖。固態硬碟170可包含j+1個存取子介面220_0至220_j,存取子介面又可稱為通道(channel),每一個存取子介面連接i+1個儲存子單元。換句話說,i+1個儲存子單元共享一個存取子介面。例如,當固態硬碟170包含8個通道(j=7)且每一個通道連接4個儲存單元(i=3)時,固態硬碟170一共擁有32個儲存單元230_0_0至230_j_i。處理單元210可驅動存取子介面220_0至220_j中之一者,從指定的儲存子單元讀取資料。每個儲存子單元擁有獨立的晶片致能(CE)控制訊號。換句話說,當欲對指定的儲存子單元進行資料讀取時,需要驅動關聯的存取子介面致能此儲存子單元的晶片致能控制訊號。於每一個通道中,第0個儲存子單元可為磁阻式隨機存取記憶體(MRAM,Magnetoresistive Random Access Memory)或電阻式隨機存取記憶體(RRAM,Resistive Random Access memory),第1至i個儲存子單元可為NAND型快閃記憶體(NAND flash memory)。磁阻式隨機存取記憶體或電阻式隨機存取記憶體的存取速度相較於NAND型快閃記憶體快速,更適合用來存放隨機存取的資料。 第0個儲存子單元可用以儲存快閃轉譯層表或隨機存取的資料。NAND型快閃記憶體並非隨機存取,而是序列存取。平台控制集線器晶片170需要寫入序列的位元組(bytes)的值到NAND型快閃記憶體,用以定義請求命令(command)的類型(如,讀取、寫入、抹除等),以及用在此命令上的位址。位址可指向一個頁面(在快閃記憶體中的一個寫入作業的最小資料塊)或一個區塊(在快閃記憶體中的一個抹除作業的最小資料塊)。 The storage unit 230 can include a plurality of storage subunits, each of which is implemented on a die, each communicating with the processing unit 210 using an associated access sub-interface. Figure 3 is a block diagram of an access interface and a storage unit in accordance with an embodiment of the present invention. The solid state drive 170 may include j + 1 access sub-interfaces 220_0 to 220_j. The access sub-interfaces may also be referred to as channels, and each access sub-interface is connected to i + 1 storage sub-units. In other words, i + 1 th sub-storage units share one accessor interface. For example, when the solid state hard disk 170 contains 8 channels ( j = 7 ) and each channel is connected to 4 storage units ( i = 3 ), the solid state hard disk 170 has a total of 32 storage units 230_0_0 to 230_j_i. The processing unit 210 can drive one of the access sub-interfaces 220_0 to 220_j to read data from the designated storage sub-unit. Each storage subunit has an independent wafer enable (CE) control signal. In other words, when data reading is to be performed on a specified storage subunit, it is necessary to drive the associated access subinterface to enable the wafer enable control signal of the storage subunit. In each channel, the 0th storage subunit may be a magnetoresistive random access memory (MRAM) or a resistive random access memory (RRAM), the first to The i storage subunits may be NAND flash memories. The access speed of the magnetoresistive random access memory or the resistive random access memory is faster than that of the NAND flash memory, and is more suitable for storing random access data. The 0th storage subunit can be used to store flash translation layer tables or randomly accessed data. NAND-type flash memory is not random access, but serial access. The platform control hub wafer 170 needs to write the value of the byte of the sequence to the NAND type flash memory to define the type of the request command (eg, read, write, erase, etc.), And the address used on this command. The address can point to a page (the smallest data block of a write job in flash memory) or a block (the smallest data block of an erase job in flash memory).

第4圖係依據本發明實施例之一個存取子介面與多個儲存子單元的連接示意圖。處理單元210可透過存取子介面220_0使用獨立的晶片致能控制訊號420_0_0至420_0_j來從連接的儲存子單元230_0_0至230_0_i中選擇出其中一者,接著,透過共享的資料線410_0從選擇出的儲存子單元的指定位置讀取資料。 Figure 4 is a schematic diagram showing the connection of an access sub-interface and a plurality of storage sub-units according to an embodiment of the present invention. The processing unit 210 can select one of the connected storage sub-units 230_0_0 to 230_0_i through the access sub-interface 220_0 using the independent wafer enable control signals 420_0_0 to 420_0_j, and then select from the shared data line 410_0. Read the data at the specified location of the storage subunit.

第5圖係依據本發明實施例之執行於處理單元中之資料寫入方法流程圖。處理單元210經由進階主機控制器介面171接收平台控制集線器晶片170所發出的邏輯寫入命令、邏輯寫入位址及待寫入資料後(步驟S511),判斷待寫入資料是否為隨機存取資料(步驟S531)。若是,則將資料寫入一個通道連接的第0個儲存子單元(亦即是磁阻式隨機存取記憶體或電阻式隨機存取記憶體)(步驟S533);否則,將資料寫入至少一個通道連接的第1至i個儲存子單元(亦即是NAND型快閃記憶體)(步驟S535)。於步驟S531中的一個例子,處理單元210可判斷待寫入資料的長度來是否超過一個閥值(例如1MBytes)決定是 否為隨機存取資料。當待寫入資料的長度來不超過一個閥值,則判斷為隨機存取資料;反之則否。於步驟S531中的另一個例子,處理單元210可判斷邏輯寫入命令中之第22或23輔助欄位位元(Auxiliary Field Bit 22 or 23)是否被舉起。當邏輯寫入命令中之第22或23輔助欄位位元被舉起時,則判斷為隨機存取資料;反之則否。 Figure 5 is a flow chart of a method of writing data in a processing unit in accordance with an embodiment of the present invention. The processing unit 210 receives the logical write command, the logical write address, and the data to be written by the platform control hub chip 170 via the advanced host controller interface 171 (step S511), and determines whether the data to be written is randomly stored. The data is taken (step S531). If yes, the data is written into the 0th storage subunit of the channel connection (that is, the magnetoresistive random access memory or the resistive random access memory) (step S533); otherwise, the data is written to at least The first to ith storage subunits (i.e., NAND type flash memories) connected by one channel (step S535). In an example in step S531, the processing unit 210 can determine whether the length of the data to be written is greater than a threshold (eg, 1 MBytes). No random access data. When the length of the data to be written does not exceed a threshold, it is judged as random access data; otherwise, no. In another example in step S531, the processing unit 210 can determine whether the 22nd or 23rd auxiliary field bit (Auxiliary Field Bit 22 or 23) in the logical write command is raised. When the 22nd or 23th auxiliary field bit in the logical write command is raised, it is judged as random access data; otherwise, no.

雖然第1圖中包含了以上描述的元件,但不排除在不違反發明的精神下,使用更多其他的附加元件,已達成更佳的技術效果。此外,雖然第5圖的流程圖採用指定的順序來執行,但是在不違法發明精神的情況下,熟習此技藝人士可以在達到相同效果的前提下,修改這些步驟間的順序,所以,本發明並不侷限於僅使用如上所述的順序。此外,熟習此技藝人士亦可以將若干步驟整合為一個步驟,或者是除了這些步驟外,循序或平行地執行更多步驟,本發明亦不因此而侷限。 Although the above-described elements are included in FIG. 1, it is not excluded that more other additional elements are used without departing from the spirit of the invention, and a better technical effect has been achieved. In addition, although the flowchart of FIG. 5 is executed in a specified order, without departing from the spirit of the invention, those skilled in the art can modify the order among the steps while achieving the same effect, and therefore, the present invention It is not limited to using only the order as described above. In addition, those skilled in the art may also integrate several steps into one step, or in addition to these steps, performing more steps sequentially or in parallel, and the present invention is not limited thereby.

雖然本發明使用以上實施例進行說明,但需要注意的是,這些描述並非用以限縮本發明。相反地,此發明涵蓋了熟習此技藝人士顯而易見的修改與相似設置。所以,申請權利要求範圍須以最寬廣的方式解釋來包含所有顯而易見的修改與相似設置。 Although the present invention has been described using the above embodiments, it should be noted that these descriptions are not intended to limit the invention. On the contrary, this invention covers modifications and similar arrangements that are apparent to those skilled in the art. Therefore, the scope of the claims should be interpreted in the broadest form to include all obvious modifications and similar arrangements.

10‧‧‧計算裝置 10‧‧‧ Computing device

110‧‧‧中央處理單元 110‧‧‧Central Processing Unit

111‧‧‧北橋晶片 111‧‧‧ North Bridge Chip

113‧‧‧動態隨機存取記憶體控制器 113‧‧‧Dynamic Random Access Memory Controller

150‧‧‧動態隨機存取記憶體 150‧‧‧ Dynamic Random Access Memory

160‧‧‧直接媒體介面匯流排 160‧‧‧Direct media interface bus

170‧‧‧平台控制集線器晶片 170‧‧‧ Platform Control Hub Wafer

171‧‧‧進階主機控制器介面 171‧‧‧Advanced Host Controller Interface

173‧‧‧固態硬碟 173‧‧‧ Solid State Drive

175‧‧‧光碟機 175‧‧‧CD player

Claims (10)

一種包含固態硬碟的計算機裝置,包含:一中央處理單元,包含一北橋晶片;一平台控制集線器晶片,包含一進階主機控制器介面,以及透過一直接媒體介面匯流排連接上述北橋晶片;以及一固態硬碟,連接上述進階主機控制器介面,其中上述固態硬碟包含多個通道,以及每一上述通道連接一磁阻式隨機存取記憶體或一電阻式隨機存取記憶體用以進行隨機存取。 A computer device including a solid state hard disk, comprising: a central processing unit including a north bridge chip; a platform control hub chip including an advanced host controller interface, and the north bridge chip connected through a direct media interface bus; a solid state hard disk connected to the advanced host controller interface, wherein the solid state hard disk includes a plurality of channels, and each of the channels is connected to a magnetoresistive random access memory or a resistive random access memory. Perform random access. 如申請專利範圍第1項所述的包含固態硬碟的計算機裝置,其中每一上述通道更連接一NAND型快閃記憶體用以進行序列存取。 A computer device comprising a solid state drive according to claim 1, wherein each of the channels is further connected to a NAND type flash memory for serial access. 如申請專利範圍第1項所述的包含固態硬碟的計算機裝置,其中上述磁阻式隨機存取記憶體或上述電阻式隨機存取記憶體儲存快閃轉譯層表的資料。 The computer device comprising the solid state hard disk according to claim 1, wherein the magnetoresistive random access memory or the resistive random access memory stores data of a flash translation layer table. 如申請專利範圍第3項所述的包含固態硬碟的計算機裝置,其中上述快閃轉譯層表用以指出每個邏輯區塊位址的資料實際上存放在哪個儲存子單元中的哪個位置的資訊。 A computer device comprising a solid state drive according to claim 3, wherein the flash translation layer table is used to indicate in which storage subunit the data of each logical block address is actually stored. News. 如申請專利範圍第2項所述的包含固態硬碟的計算機裝置,其中每一上述通道之上述磁阻式隨機存取記憶體或上述電阻式隨機存取記憶體,以及上述NAND型快閃記憶體使用獨立的晶片致能控制訊號進行致能。 The computer device including the solid state hard disk according to claim 2, wherein the magnetoresistive random access memory or the resistive random access memory of each of the channels, and the NAND flash memory The body is enabled using a separate wafer enable control signal. 一種存取固態硬碟的方法,由一固態硬碟中之一處理單元執行,包含: 經由一進階主機控制器介面接收一平台控制集線器晶片所發出的一邏輯寫入命令、一邏輯寫入位址及一待寫入資料;判斷上述待寫入資料是否為隨機存取資料;當上述待寫入資料為隨機存取資料時,將上述資料寫入上述固態硬碟中之一通道連接的一磁阻式隨機存取記憶體或一電阻式隨機存取記憶體。 A method of accessing a solid state hard disk, executed by a processing unit of a solid state hard disk, comprising: Receiving, by an advanced host controller interface, a logical write command, a logical write address, and a to-be-written data sent by a platform control hub chip; determining whether the data to be written is random access data; When the data to be written is random access data, the data is written into a magnetoresistive random access memory or a resistive random access memory connected to one of the solid state hard disks. 如申請專利範圍第6項所述的存取固態硬碟的方法,更包含:當上述待寫入資料不是隨機存取資料時,將上述資料寫入上述固態硬碟中之一通道連接的一NAND型快閃記憶體。 The method for accessing a solid state hard disk according to claim 6, further comprising: when the data to be written is not random access data, writing the data to one of the connected channels of the solid state hard disk NAND type flash memory. 如申請專利範圍第6項所述的存取固態硬碟的方法,其中,於判斷上述待寫入資料是否為隨機存取資料的步驟中,更包含:判斷上述待寫入資料的長度來是否超過一閥值,其中當上述待寫入資料的長度來不超過上述閥值時代表上述待寫入資料為隨機存取資料。 The method for accessing a solid state hard disk according to claim 6, wherein in the step of determining whether the data to be written is random access data, the method further comprises: determining whether the length of the data to be written is Exceeding a threshold value, wherein when the length of the data to be written does not exceed the threshold, the data to be written is random access data. 如申請專利範圍第6項所述的存取固態硬碟的方法,其中,於判斷上述待寫入資料是否為隨機存取資料的步驟中,更包含:判斷上述邏輯寫入命令中之一第22或23輔助欄位位元是否被舉起,其中當上述第22或23輔助欄位位元被舉起時代表上述待寫入資料為隨機存取資料。 The method for accessing a solid state drive according to claim 6, wherein in the step of determining whether the data to be written is random access data, the method further comprises: determining one of the logical write commands. Whether the 22 or 23 auxiliary field bit is raised, wherein when the 22nd or 23rd auxiliary field bit is raised, the data to be written is random access data. 如申請專利範圍第7項所述的存取固態硬碟的方法,其中上述固態硬碟包含多個通道,每一上述通道連接上述磁阻 式隨機存取記憶體或上述電阻式隨機存取記憶體用以進行隨機存取,以及每一上述通道連接上述NAND型快閃記憶體用以進行序列存取。 The method of accessing a solid state hard disk according to claim 7, wherein the solid state hard disk comprises a plurality of channels, each of the channels connecting the magnetoresistance The random access memory or the resistive random access memory is used for random access, and each of the channels is connected to the NAND type flash memory for serial access.
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