TWM548816U - Storage device using host memory buffer - Google Patents

Storage device using host memory buffer Download PDF

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TWM548816U
TWM548816U TW106204907U TW106204907U TWM548816U TW M548816 U TWM548816 U TW M548816U TW 106204907 U TW106204907 U TW 106204907U TW 106204907 U TW106204907 U TW 106204907U TW M548816 U TWM548816 U TW M548816U
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memory
storage device
volatile memory
host
controller
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TW106204907U
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Chinese (zh)
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侯冠宇
傅子瑜
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宏碁股份有限公司
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Abstract

A storage device using a host memory buffer is provided. The storage device includes: a non-volatile memory; a dynamic random access memory for storing an address mapping table of the non-volatile memory; and a controller for receiving a sequential writing command of writing data from a host, wherein the writing data is stored in a host memory buffer of a system memory of the host. The controller retrieves the address mapping table from the dynamic random access memory and determines a physical block address of the writing data to be written into the non-volatile memory. After the controller determines the physical block address of the writing data to be written into the non-volatile memory, the controller writes the writing data from the host memory buffer directly to the non-volatile memory according to the physical block address.

Description

利用主控端記憶體緩衝器之儲存裝置 Storage device using host memory buffer

本創作係有關於儲存裝置,特別是有關於一種利用主控端記憶體緩衝器之儲存裝置。 This creation relates to storage devices, and more particularly to a storage device that utilizes a host memory buffer.

隨著技術發展,在電腦系統中之儲存裝置的傳輸速度也愈來愈快,例如固態硬碟(Solid-state Disk)即為可進行快速資料存取的非揮發性記憶體。近年來,由各電腦廠商已訂定了非揮發性記憶體之傳輸標準,例如進階主機控制器介面(Advanced Host Controller Interface,AHCI)及快捷非揮發性記憶體(Non-volatile Memory Express,NVMe)等等。 With the development of technology, the storage speed of storage devices in computer systems is also increasing. For example, Solid-state Disk is a non-volatile memory that can perform fast data access. In recent years, non-volatile memory transmission standards have been set by various computer manufacturers, such as Advanced Host Controller Interface (AHCI) and Non-volatile Memory Express (NVMe). )and many more.

上述兩種標準階為在儲存裝置與作業系統端的包含指令集、快閃記憶體存取控制、暫存器傳輸級(Register Transfer Level)、及驅動程式層等介面標準。 The above two standard steps are interface standards including instruction set, flash memory access control, register transfer level, and driver layer on the storage device and the operating system side.

更進一步而言,NVME是一種改善傳統AHCI的新型儲存裝置控制器,其能改善系統資源的使用,例如使用系統多核心下達指令、減下不必要的暫存器控制等等。傳統的電腦系統中之主控端(即中央處理器及平台控制集線器)與儲存裝置(例如NVME固態硬碟)之間在進行高速資料傳輸時,例如可透過PCIe Gen 3x4之介面。 Furthermore, NVME is a new type of storage device controller that improves the traditional AHCI, which can improve the use of system resources, such as using system multi-core instructions, reducing unnecessary scratchpad control, and so on. In the traditional computer system, the main control terminal (ie, the central processing unit and the platform control hub) and the storage device (such as the NVME solid state drive) can perform high-speed data transmission, for example, through the PCIe Gen 3x4 interface.

然而,在傳統的電腦系統欲進行循序寫入資料至儲存裝置時,仍需先將資料寫入儲存裝置之控制器中的靜態隨機存取記憶體(SRAM),再將靜態隨機存取記憶體中的資料寫入動態隨機存取記憶體(DRAM)。同時,控制器之會查詢在動態隨機存取記憶體中之位址映射表,接著才將動態隨機存取記憶體中之資料寫入NAND快閃記憶體中。 However, when a conventional computer system wants to sequentially write data to a storage device, it still needs to write the data to a static random access memory (SRAM) in the controller of the storage device, and then the static random access memory. The data in is written to dynamic random access memory (DRAM). At the same time, the controller queries the address mapping table in the dynamic random access memory, and then writes the data in the DRAM into the NAND flash memory.

在目前市面上之固態硬碟機,當原本8CH2CE之512GB容量之固態硬碟機擴增到8CH4CE之1TB之固態硬碟機時,其寫入速度幾乎是持平的,例如僅能維持在2100MB/s左右,其中CH係指通道數,CE係指晶片致能數(chip enable)。 In the current solid-state hard disk drive, when the 8CH2CE 512GB solid state hard disk drive is expanded to 8CH4CE 1TB solid state drive, the write speed is almost the same, for example, it can only be maintained at 2100MB/ s or so, where CH is the number of channels, and CE is the chip enable.

由此可知在傳統固態硬碟機中之控制器需先將欲寫入之資料排列於控制器之靜態隨機存取記憶體中,再接著寫入快閃記憶體,但寫入頻寬仍然距離DMI之理論頻寬4GB/s仍有不小的差距。 Therefore, the controller in the conventional solid-state hard disk drive needs to first arrange the data to be written in the static random access memory of the controller, and then write the flash memory, but the write bandwidth is still the distance. The theoretical bandwidth of DMI is still 4GB/s.

因此,需要一種利用主控端記憶體緩衝器之儲存裝置以解決傳統儲存裝置之上述問題。 Therefore, there is a need for a storage device that utilizes a host memory buffer to solve the above problems of conventional storage devices.

本創作係提供一種利用主控端記憶體緩衝器之儲存裝置,包括:一非揮發性記憶體;一動態隨機存取記憶體,用以儲存該非揮發性記憶體之一位址映射表;以及一控制器,用以從一主控端接收一寫入資料之一連續寫入指令,其中該寫入資料係儲存於該主控端之一系統記憶體中之一主控端記憶體緩衝器,其中該控制器係由該動態隨機存取記憶體取得該位 址映射表,並決定該寫入資料於該非揮發性記憶體中之一物理區塊位址;其中在該控制器決定該寫入資料於該非揮發性記憶體中之該物理區塊位址後,該控制器係控制該系統記憶體,並依據該物理區塊位址將該寫入資料由該系統記憶體中之該主控端記憶體緩衝器直接寫入該非揮發性記憶體。 The present invention provides a storage device using a host memory buffer, comprising: a non-volatile memory; a dynamic random access memory for storing an address map of the non-volatile memory; a controller for receiving a continuous write command of a write data from a master terminal, wherein the write data is stored in one of the system memory of the master terminal, the host memory buffer Where the controller obtains the bit from the dynamic random access memory Address mapping table, and determining the physical data block address of the write data in the non-volatile memory; wherein after the controller determines the write data in the physical block address in the non-volatile memory The controller controls the memory of the system, and writes the write data directly to the non-volatile memory by the host memory buffer in the system memory according to the physical block address.

在一實施例中,該儲存裝置與該主控端之間係包括複數條傳輸通道。 In an embodiment, the storage device and the host end comprise a plurality of transmission channels.

在一實施例中,其中該儲存裝置係支援快捷非揮發性記憶體(NVMe)標準。 In one embodiment, wherein the storage device supports the Fast Non-Volatile Memory (NVMe) standard.

在一實施例中,該控制器係包括一靜態隨機存取記憶體,且該寫入資料不透過該靜態隨機存取記憶體而寫入該非揮發性記憶體。 In one embodiment, the controller includes a static random access memory, and the write data is written to the non-volatile memory without passing through the static random access memory.

在一實施例中,該主控端係包括一中央處理器及一平台控制集線器,且該平台控制集線器係透過一傳輸埠與該控制器連接。 In one embodiment, the host includes a central processing unit and a platform control hub, and the platform control hub is coupled to the controller via a transmission port.

在一實施例中,該主控端之該系統記憶體為一動態隨機存取記憶體。 In one embodiment, the system memory of the master is a dynamic random access memory.

本創作係提供一種利用主控端記憶體緩衝器之儲存裝置。當主控端欲對儲存裝置(例如固態硬碟)進行連續資料寫入時,該儲存裝置之控制器係可直接控制主控端之系統記憶體中之主控端記憶體緩衝器,並將欲寫入儲存裝置之資料由主控端記憶體緩衝器直接寫入儲存裝置中之非揮發性記憶體(例如快閃記憶體),進行達到更快的寫入速度,而不用受限於儲存裝置中之緩衝器拖累寫入速度。 This creation provides a storage device that utilizes a host memory buffer. When the host wants to write continuous data to a storage device (such as a solid state drive), the controller of the storage device can directly control the host memory buffer in the system memory of the host, and The data to be written to the storage device is directly written into the non-volatile memory (such as flash memory) in the storage device by the host memory buffer to achieve faster writing speed without being limited to storage. The buffer in the device drags the write speed.

100‧‧‧電腦系統 100‧‧‧ computer system

110‧‧‧中央處理器 110‧‧‧Central Processing Unit

120‧‧‧系統記憶體 120‧‧‧System Memory

121‧‧‧主控端記憶體緩衝器 121‧‧‧Master memory buffer

130‧‧‧平台控制集線器 130‧‧‧ Platform Control Hub

131‧‧‧傳輸埠 131‧‧‧Transportation

140‧‧‧儲存裝置 140‧‧‧Storage device

141‧‧‧控制器 141‧‧‧ Controller

142‧‧‧揮發性記憶體 142‧‧‧ volatile memory

143‧‧‧動態隨機存取記憶體 143‧‧‧ Dynamic Random Access Memory

144-147‧‧‧非揮發性記憶體 144-147‧‧‧ Non-volatile memory

150-153‧‧‧通道 150-153‧‧‧ channel

第1圖係顯示依據本創作一實施例中之電腦系統之方塊圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a block diagram showing a computer system in accordance with an embodiment of the present invention.

為使本創作之上述目的、特徵和優點能更明顯易懂,下文特舉一較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above objects, features and advantages of the present invention more comprehensible, the following detailed description of the preferred embodiments and the accompanying drawings are set forth below.

第1圖係顯示依據本創作一實施例中之電腦系統之方塊圖。在一實施例中,電腦系統100包括一中央處理器110、一系統記憶體120、一平台控制集線器(Platform Control Hub、PCH)130、及一儲存裝置140。其中,中央處理器110及平台控制集線器130係可稱為一主控端(host)。儲存裝置140係包括控制器141,其係支援NVMe標準,用以控制非揮發性記憶體144~147之存取。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a block diagram showing a computer system in accordance with an embodiment of the present invention. In one embodiment, the computer system 100 includes a central processing unit 110, a system memory 120, a platform control hub (PCH) 130, and a storage device 140. The central processing unit 110 and the platform control hub 130 may be referred to as a host. The storage device 140 includes a controller 141 that supports the NVMe standard for controlling access to the non-volatile memory 144-147.

系統記憶體120例如是一動態隨機存取記憶體(dynamic random access memory,DRAM)。 The system memory 120 is, for example, a dynamic random access memory (DRAM).

非揮發性記憶體144~147例如是NAND快閃記憶體,但本創作並不限於此。在一些實施例中,非揮發性記憶體144~147係為一非揮發性記憶體中所分割出來之不同非揮發性記憶體區塊,且本創作並不限制在非揮發性記憶體中之非揮發性記憶體區塊之數量。 The non-volatile memory 144 to 147 is, for example, a NAND flash memory, but the present creation is not limited thereto. In some embodiments, the non-volatile memory 144-147 is a different non-volatile memory block segmented in a non-volatile memory, and the creation is not limited to non-volatile memory. The number of non-volatile memory blocks.

在一些實施例中,控制器141例如可為一應用導向 積體電路(Application-Specific Integrated Circuit、ASIC)或具有類似功能之電路,但本創作並不限於此。 In some embodiments, the controller 141 can be, for example, an application oriented Application-Specific Integrated Circuit (ASIC) or a circuit having similar functions, but the creation is not limited thereto.

此外,控制器141係包括一揮發性記憶體142,例如是一靜態隨機存取記憶體,其可用於暫存來自主控端欲寫入之資料。在一些實施例中,揮發性記憶體142可不用於暫存來自主控端欲寫入之資料。 In addition, the controller 141 includes a volatile memory 142, such as a static random access memory, which can be used to temporarily store data to be written from the host. In some embodiments, the volatile memory 142 may not be used to temporarily store data from the host to be written.

另外,平台控制集線器130及儲存裝置140之間係以PCIe匯流排做為溝通橋樑,例如是一組PCIe Gen 3x4之通道,例如包括通道150~153。 In addition, the platform control hub 130 and the storage device 140 are connected by a PCIe bus, for example, a set of PCIe Gen 3x4 channels, for example, including channels 150-153.

更進一步而言,平台控制集線器130係透過傳輸埠131及通道150~153與控制器141連接以進行資料傳輸。在一些實施例中,傳輸埠131亦可稱為根連接埠(root port)。 Further, the platform control hub 130 is connected to the controller 141 via the transport port 131 and the channels 150-153 for data transmission. In some embodiments, the transport port 131 may also be referred to as a root port.

需注意的是,在NVMe之規格書中係定義了主控端記憶體緩衝器(host memory buffer、HMB)之功能。此功能係利用PCIe介面之NVMe儲存裝置能夠直接對系統記憶體之資料進行存取的特性,並使用系統記憶體之容量來取代儲存裝置中之靜態隨機存取記憶體之功能,藉以避免在寫入資料至NAND快閃記憶體時遇到寫入瓶頸。 It should be noted that the function of the host memory buffer (HMB) is defined in the NVMe specification. This function utilizes the feature that the NVMe storage device of the PCIe interface can directly access the data of the system memory, and uses the capacity of the system memory to replace the function of the static random access memory in the storage device, thereby avoiding writing. A write bottleneck was encountered when entering data into NAND flash memory.

然而,傳統的儲存裝置之控制器在寫入資料時,必須同時負荷將資料直接寫入靜態隨機存取記憶體,並由動態隨機存取記憶體讀取位址映射表之工作,對於循序寫入之連續寫入行為而言,仍會受到一定程度的影響,意即寫入速度會降低。 However, when the controller of the conventional storage device writes data, it must load the data directly into the static random access memory, and the work of reading the address mapping table by the dynamic random access memory is performed for sequential writing. In terms of continuous write behavior, it will still be affected to a certain extent, meaning that the write speed will decrease.

在本創作之電腦系統100中,系統記憶體120係劃 分出一主控端記憶體緩衝器121,用以取代在控制器141中之揮發性記憶體142之功能。 In the computer system 100 of the present creation, the system memory 120 is planned A master memory buffer 121 is divided to replace the function of the volatile memory 142 in the controller 141.

舉例來說,本創作係利用NVMe標準所定義之主控端記憶體緩衝器的功能來取代寫入資料用的靜態隨機存取記憶體。此外,在儲存裝置140中之動態隨機存取記憶體則是專職對FTL表的存取及排列。 For example, the author uses the function of the host memory buffer defined by the NVMe standard to replace the static random access memory for writing data. In addition, the dynamic random access memory in the storage device 140 is a full-time access and arrangement of the FTL table.

最後,控制器141可直接對系統記憶體120下達控制指令,將資料由系統記憶體120中之主控端記憶體緩衝器121寫入到非揮發性記憶體144~147。 Finally, the controller 141 can directly issue a control command to the system memory 120 to write the data from the host memory buffer 121 in the system memory 120 to the non-volatile memory 144-147.

更進一步而言,本創作提出之資料寫入方法與目前NVMe標準所定義之主控端記憶體緩衝器之功能並不衝突。舉例來說,原本主控端記憶體緩衝器之功能即是要取代在固態硬碟機中之動態隨機存取記憶體,並將原本固態硬碟機中之位址映射表之空間全部交由系統記憶體來儲存,但這種傳統的方法只是為了節省固態硬碟機之成本,對於固態硬碟機之效能提昇並沒有任何幫助。 Furthermore, the data writing method proposed by the present creation does not conflict with the function of the host memory buffer defined by the current NVMe standard. For example, the function of the original host memory buffer is to replace the dynamic random access memory in the solid state drive, and to hand over the space of the address mapping table in the original solid state drive. System memory is used for storage, but this traditional method is only to save the cost of the solid state drive, and it does not help the performance of the solid state drive.

對於高階的固態硬碟機來說,配置動態隨機存取記憶體以存取快閃轉譯層(flash translation layer,FTL)之位址映射表之效率仍是較佳的,特別是現今的固態硬碟機之容量愈來愈大,隨之改變的是其快閃轉譯層的位址映射表的大小也會成正比增加。 For high-end solid state drives, the efficiency of configuring dynamic random access memory to access the flash translation layer (FTL) address mapping table is still better, especially today's solid state hard The capacity of the disc player is getting larger and larger, and the change is that the size of the address mapping table of the flash translation layer is also proportionally increased.

在一實施例中,當中央處理器110欲寫入資料至儲存裝置140時,中央處理器110係先將欲寫入之資料暫存於系統記憶體120中之主控端記憶體緩衝器121。 In an embodiment, when the central processing unit 110 wants to write data to the storage device 140, the central processing unit 110 temporarily stores the data to be written in the main memory memory buffer 121 in the system memory 120. .

此時,儲存裝置140之控制器141係由動態隨機存取記憶體143取得快閃轉譯層之位址映射表,並決定欲寫入資料在非揮發性記憶體144~147中之物理區塊位址(physical block address,PBA)。當控制器141決定欲寫入資料在非揮發性記憶體144~147中之物理區塊位址後,控制器141即可直接控制系統記憶體120,並依據該位址映射表將欲寫入之資料由主控端記憶體緩衝器121直接寫入非揮發性記憶體144~147,並不需要透過控制器141之揮發性記憶體142,進而達到寫入行為之分工化。 At this time, the controller 141 of the storage device 140 obtains the address mapping table of the flash translation layer from the dynamic random access memory 143, and determines the physical block to be written in the non-volatile memory 144~147. Physical block address (PBA). After the controller 141 determines the physical block address to be written in the non-volatile memory 144~147, the controller 141 can directly control the system memory 120 and write the data according to the address mapping table. The data is directly written into the non-volatile memory 144~147 by the host memory buffer 121, and does not need to pass through the volatile memory 142 of the controller 141, thereby achieving the division of the write behavior.

更進一步而言,在主控端欲對儲存裝置140進行連續寫入時,可不再受限於揮發性記憶體142之速限(例如存取記憶體均需要溝通時間)。 Furthermore, when the host terminal wants to continuously write to the storage device 140, it can no longer be limited by the speed limit of the volatile memory 142 (for example, access memory requires communication time).

綜上所述,本創作係提供一種利用主控端記憶體緩衝器之儲存裝置。當主控端欲對儲存裝置(例如固態硬碟)進行連續資料寫入時,該儲存裝置之控制器係可直接控制主控端之系統記憶體中之主控端記憶體緩衝器,並將欲寫入儲存裝置之資料由主控端記憶體緩衝器直接寫入儲存裝置中之非揮發性記憶體(例如快閃記憶體),進行達到更快的寫入速度,而不用受限於儲存裝置中之緩衝器拖累寫入速度。 In summary, the present invention provides a storage device that utilizes a host memory buffer. When the host wants to write continuous data to a storage device (such as a solid state drive), the controller of the storage device can directly control the host memory buffer in the system memory of the host, and The data to be written to the storage device is directly written into the non-volatile memory (such as flash memory) in the storage device by the host memory buffer to achieve faster writing speed without being limited to storage. The buffer in the device drags the write speed.

本創作雖以較佳實施例揭露如上,然其並非用以限定本創作的範圍,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可做些許的更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 The present invention is disclosed in the above preferred embodiments, and is not intended to limit the scope of the present invention. Any person having ordinary skill in the art can make some changes without departing from the spirit and scope of the present invention. Retouching, therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

100‧‧‧電腦系統 100‧‧‧ computer system

110‧‧‧中央處理器 110‧‧‧Central Processing Unit

120‧‧‧系統記憶體 120‧‧‧System Memory

121‧‧‧主控端記憶體緩衝器 121‧‧‧Master memory buffer

130‧‧‧平台控制集線器 130‧‧‧ Platform Control Hub

131‧‧‧傳輸埠 131‧‧‧Transportation

140‧‧‧儲存裝置 140‧‧‧Storage device

141‧‧‧控制器 141‧‧‧ Controller

142‧‧‧揮發性記憶體 142‧‧‧ volatile memory

143‧‧‧動態隨機存取記憶體 143‧‧‧ Dynamic Random Access Memory

144-147‧‧‧非揮發性記憶體 144-147‧‧‧ Non-volatile memory

150-153‧‧‧通道 150-153‧‧‧ channel

Claims (6)

一種利用主控端記憶體緩衝器之儲存裝置,包括:一非揮發性記憶體;一動態隨機存取記憶體,用以儲存該非揮發性記憶體之一位址映射表;以及一控制器,用以從一主控端接收一寫入資料之一連續寫入指令,其中該寫入資料係儲存於該主控端之一系統記憶體中之一主控端記憶體緩衝器,其中該控制器係由該動態隨機存取記憶體取得該位址映射表,並決定該寫入資料於該非揮發性記憶體中之一物理區塊位址;其中在該控制器決定該寫入資料於該非揮發性記憶體中之該物理區塊位址後,該控制器係控制該系統記憶體,並依據該物理區塊位址將該寫入資料由該系統記憶體中之該主控端記憶體緩衝器直接寫入該非揮發性記憶體。 A storage device using a memory buffer of a host terminal, comprising: a non-volatile memory; a dynamic random access memory for storing an address mapping table of the non-volatile memory; and a controller, a continuous write command for receiving a write data from a host, wherein the write data is stored in one of the system memory of the host, the host memory buffer, wherein the control Obtaining the address mapping table by the dynamic random access memory, and determining the physical data block address of the write data in the non-volatile memory; wherein the controller determines that the write data is in the non-volatile memory After the physical block address in the volatile memory, the controller controls the system memory, and the written data is written by the host memory in the system memory according to the physical block address. The buffer is written directly to the non-volatile memory. 如申請專利範圍第1項所述之儲存裝置,其中該儲存裝置與該主控端之間係包括複數條傳輸通道。 The storage device of claim 1, wherein the storage device and the main control end comprise a plurality of transmission channels. 如申請專利範圍第2項所述之儲存裝置,其中該儲存裝置係支援快捷非揮發性記憶體(NVMe)標準。 The storage device of claim 2, wherein the storage device supports the Fast Non-Volatile Memory (NVMe) standard. 如申請專利範圍第3項所述之儲存裝置,其中該控制器係包括一靜態隨機存取記憶體,且該寫入資料不透過該靜態隨機存取記憶體而寫入該非揮發性記憶體。 The storage device of claim 3, wherein the controller comprises a static random access memory, and the written data is written to the non-volatile memory without passing through the static random access memory. 如申請專利範圍第1項所述之儲存裝置,其中該主控端係包括一中央處理器及一平台控制集線器,且該平台控制集線 器係透過一傳輸埠與該控制器連接。 The storage device of claim 1, wherein the main control terminal comprises a central processing unit and a platform control hub, and the platform controls the collection line. The device is connected to the controller through a transmission port. 如申請專利範圍第1項所述之儲存裝置,其中該主控端之該系統記憶體為一動態隨機存取記憶體。 The storage device of claim 1, wherein the system memory of the main control terminal is a dynamic random access memory.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110262750A (en) * 2018-03-12 2019-09-20 宏碁股份有限公司 Stocking system and storage method
CN111090388A (en) * 2018-10-24 2020-05-01 三星电子株式会社 Data storage device using host memory buffer and method of operating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110262750A (en) * 2018-03-12 2019-09-20 宏碁股份有限公司 Stocking system and storage method
CN110262750B (en) * 2018-03-12 2023-05-09 宏碁股份有限公司 Storage system and storage method
CN111090388A (en) * 2018-10-24 2020-05-01 三星电子株式会社 Data storage device using host memory buffer and method of operating the same
CN111090388B (en) * 2018-10-24 2024-04-26 三星电子株式会社 Data storage device using host memory buffer and method of operating the same

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