TW201638290A - Polishing composition - Google Patents

Abstract

To provide a polishing composition with which it is possible, in at least one of the acidic, neutral, and basic ranges, to sufficiently control the polishing rate for an object to be polished having a silicon-oxygen bond, such as a silicon oxide film. Provided is a polishing composition comprising (1) an organic compound having an active site that interacts with an object to be polished having a silicon-oxygen bond, and a suppression site that suppresses the approach of a polishing constituent for polishing the object to be polished toward the object to be polished, (2) abrasive particles, and (3) a dispersion medium, wherein the polishing rate for the object to be polished having a silicon-oxygen bond is suppressed in at least one of the acidic, neutral, and basic ranges.

Description

Grinding composition

The present invention relates to a composition for polishing.

In the past, new microfabrication technology has been developed with the integration of LSI (Large Scale Integration) and high performance. Chemical Mechanical Polishing (hereinafter also referred to as CMP) is also a kind of LSI manufacturing process, especially shallow trench isolation (STI), interlayer dielectric film (ILD film) planarization, tungsten A CMP is used as a step of forming a Tungsten Plug, forming a multilayer wiring composed of copper and a low dielectric film, and the like.

In such a semiconductor device manufacturing process, there is a need to polish an object to be polished, such as polycrystalline germanium, tantalum oxide, tantalum nitride, or the like, at a high speed.

Further, it is required to control the polishing rate of each Si-containing material due to the structure of the semiconductor device, and attempts have been made to improve the selection ratio for this purpose.

In order to improve the selection ratio, the grinding speed of other film types is increased. In general, the surface of the abrasive grains is modified by a coupling agent or the like, and the zeta potential of the abrasive grains is changed to improve the polishing rate. The way. So, in the industry, how to improve the grinding speed.

In addition, the industry has not fully reviewed the method of suppressing the polishing rate of other materials. A method of suppressing the polishing rate of a minority of other materials, for example, an agent for suppressing the rate at which the dielectric layer containing germanium is removed, for example, having at least two functional amine groups (NH ₂ ) and at least one functional carboxylic acid. An example of a compound of the group (COOH) (Patent Document 1).

However, the technique disclosed in Patent Document 1 cannot sufficiently control the polishing rate of the object to be polished having a yttrium-oxygen bond such as a ruthenium oxide film, and further improvement is desired.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2004-512681

[Summary of the Invention]

An object of the present invention is to provide a polishing composition which can sufficiently control the polishing rate of an object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film.

In order to solve the above problems, the inventors of the present invention have found that the above-mentioned problem can be solved by providing a polishing composition having the following components (1) to (3), which are acidic, In at least one of neutral or alkaline, the polishing rate of the object to be polished having the 矽-oxygen bond is inhibited, wherein the component (1) has an action site for interacting with the object to be polished having a 矽-oxygen bond and An organic compound that suppresses polishing of the polishing component of the object to be polished close to the site of suppression of the object to be polished; (2) abrasive grains; and (3) a dispersion medium.

According to the present invention, it is possible to provide a polishing composition which is at least one of acidic, neutral or basic, and which can sufficiently control the polishing rate of an object to be polished having a yttrium-oxygen bond such as a ruthenium oxide film.

[Formation of the Invention]

The invention is described below. Further, the present invention is not only shown in the following embodiments. In addition, in this specification, "X~Y" which shows the range is "X or more Y or less." Further, when not specifically stated, the measurement of handling and physical properties is measured at room temperature (20 to 25 ° C) / relative humidity of 40 to 50% RH.

<grinding composition>

The present invention relates to a polishing composition comprising the following components (1) to (3), wherein the polishing of the object to be polished having the 矽-oxygen bond is suppressed in at least one of acidic, neutral or alkaline The component (1) has an action site that interacts with the object to be polished having a 矽-oxygen bond, and an organic compound that inhibits the polishing component of the object to be polished from approaching the site of the object to be polished; (2) Abrasive particles; and (3) dispersing medium. In the present specification, the "grinding composition" is also referred to as "the polishing composition of the present invention".

[Organic Compounds]

As described above, the organic compound of the present invention has an action site for interacting with an object to be polished having an oxime-oxygen bond (also referred to simply as "the object to be polished" in the present specification), and polishing for polishing the object to be polished. An organic compound having a component close to the site of inhibition of the object to be polished (also referred to as "the organic compound of the present invention" in the present specification).

In the one molecule, the organic compound of the present invention has an action site for interacting with the object to be polished having a 矽-oxygen bond, and a site for suppressing the polishing of the object to be polished from approaching the object to be polished. Therefore, the action site in the organic compound interacts with the object to be polished, and the suppressing portion suppresses the polishing component that polishes the object to be polished from approaching the object to be polished. Therefore, the polishing composition containing such an organic compound is at least one of acidic, neutral, or alkaline, and the object to be polished having an oxime-oxygen bond such as a ruthenium oxide film is sufficiently suppressed. In other words, there is a part of the action and the inhibitory part in one molecule. The compound in the position differs from the organic compound of the present invention.

In addition, in the present specification, "inhibiting the polishing rate of the object to be polished having the oxime-oxygen bond in at least one of acidic, neutral or alkaline" means that as shown in the examples, it is not added at all. In the case of the additive (that is, a component other than the "abrasive grain, the dispersion medium, and the pH adjuster if necessary"), it is possible to suppress the polishing of the object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film. speed.

In the present specification, the term "grinding component" means a component that can polish an object to be polished, such as abrasive grains.

(action site)

As described above, the organic compound of the present invention has a site of interaction with respect to an object to be polished having a 矽-oxygen bond. Here, the "acting site" may have any structure as long as it interacts with the object to be polished having a 矽-oxygen bond, but preferably has a structure selected from a nitrogen atom, an oxygen atom, a sulfur atom, and At least one of the groups of phosphorus atoms. By having such a configuration, an interaction can be generated for an object to be polished having a 矽-oxygen bond. Further, the action site may be in the form of a salt, and the salt is preferably a sodium salt, a potassium salt, an ammonium salt or an amine salt.

In addition, when the number of the action sites is one or more in one molecule, it is not particularly limited, and may be two or more, or may be three or more.

In a preferred embodiment of the invention, the site of action has at least a nitrogen atom and an oxygen atom. By having such a structure, it is more reliable and - The object to be polished of the oxygen bond generates an interaction.

In a preferred embodiment of the present invention, the action site is selected from the group consisting of a sulfide ion group, an amine group, a phosphonic acid group or a salt thereof, an N-oxide structure, a carboxyl group or a salt thereof, a phenol structure, and an alkylene oxide structure. At least one of a group consisting of a (diether structure) and a betaine structure. By having such a configuration, it is possible to more surely interact with an object to be polished having a helium-oxygen bond. Further, the alkylene oxide is preferably an alkylene oxide. A plurality of alkylene oxide structures may be present in one molecule. Further, in the present invention, the "amine group" means a structure having -NH ₂ .

Further, in a preferred embodiment of the present invention, the action site has a structure in which a nitrogen atom and an oxygen atom are directly bonded, or a divalent organic group having a carbon number of 3 or less is interposed between a nitrogen atom and an oxygen atom. By having such a configuration, the following mechanism can more reliably interact with an object to be polished having a helium-oxygen bond. However, the following mechanisms are merely speculations, and of course do not limit the scope of the technology of the present invention. In other words, the nitrogen atom is slightly positively charged (the state in which the electron density is lowered), and the oxygen atom is slightly negatively charged (the state in which the electron density is high). This relationship is determined by the relationship of the electronegativity of the element, which is easily positively charged, or easily negatively charged. When the interaction of electrons in the molecules of the same organic compound is closer to each other, the stronger the mutual influence, the stronger the intensity of the charge of each atom becomes. According to this theory, the range of the strength at which the oxygen-germanium structure acts in the action site is estimated to be in the range of 3 or less carbon atoms. In addition, it is an action mechanism having a structure having an electron density, but an oxygen atom in a state in which the electron density is lowered, an oxygen atom on the surface of the film having an oxygen-ruthenium structure, or an oxygen in a state in which the electron density is high. Atoms and helium atoms act, organic The site of action of the compound is chemisorbed to the surface of the membrane having an oxygen-ruthenium structure.

Among the above, the action site is preferably at least one of an N-oxide structure and a betaine structure. In the case where the action site is a betaine structure, it is particularly preferable that the organic group of the site to be inhibited is a site having an alkyl group having 8 or more carbon atoms. Further, according to a preferred embodiment of the present invention, the action site has an N-oxide structure, and the site of action is preferably a carboxyl group.

Further, in accordance with a preferred embodiment of the present invention, the organic compound is preferably an oxide of a tertiary amine. In addition, the method of forming the oxide of the tertiary amine from the tertiary amine is not particularly limited, and for example, it can be carried out using an oxidizing agent such as hydrogen peroxide described below.

Further, according to an embodiment of the present invention, the action site is an N-oxide structure, and the site of inhibition is an alkyl group or a sulfhydryl group having a carbon number of 8 or more. With such a structure, the N-oxide structure produces a strong chemisorption on the surface of the object to be polished having a 矽-oxygen bond, and the alkyl group or sulfhydryl group having a carbon number of 8 or more becomes sterically hindered. The function of the action of the grinding component. However, the above-described mechanism is merely speculative, and of course, does not limit the scope of the technology of the present invention.

The number of carbon atoms of the alkyl group or the fluorenyl group may be 9 or more, or may be 10 or more, and the upper limit may be 20 or less, or may be 15 or less. Here, specific examples of the alkyl group are preferably those listed below. Further, the fluorenyl group has a structure of "-COR", and R is preferably the same alkyl group.

Further, another aspect of the present invention has an action portion In the case of the nitrogen atom in the position, when the N-oxide structure and the betaine structure are not used, the action site is preferably bonded to a hydrogen atom without passing through a carbon atom.

Further, in another aspect of the present invention, in the case of having an oxygen atom as an active site, when the N-oxide structure or the betaine structure is not used, it is preferred that the molecule has no triple bond and two oxygen atoms.

Further, another aspect of the present invention is a case where an oxygen atom is used as an active site. When the N-oxide structure and the betaine structure are not used, when an oxygen atom is one, an aromatic ring bond such as benzene or naphthalene is used. The knot is better.

Further, in another embodiment of the present invention, in the case of having an oxygen atom as an active site, when the N-oxide structure and the betaine structure are not used, when three oxygen atoms are present, it is preferred to have a phosphorus atom.

(inhibition site)

Further, as described above, the organic component of the present invention is a polishing component for polishing the object to be polished, and has a suppressing portion for suppressing the object to be polished. Here, the "suppression site" means any structure as long as the polishing component for polishing the object to be polished has an action of suppressing the approach of the object to be polished. In addition, when the number of the inhibitory sites is one or more, that is, it is not particularly limited, and may be two or more, or may be three or more.

In one aspect of the invention, it is preferable that the suppression site has a total carbon number of 3 or more. In one aspect of the invention, the inhibition site has The total carbon number is 4 or more. Moreover, in one aspect of the present invention, the suppression portion has a total carbon number of 6 or more. Moreover, in one aspect of the present invention, the suppression portion has a total carbon number of 8 or more. In particular, when the total carbon number is 3 or more, the hydrophobicity of the suppression suppressing portion is lowered, and it is easy to produce a molecular alignment film for suppressing the film. In addition, when the total carbon number is 3 or more, it is possible to suppress the polishing component from approaching the surface of the object to be polished (substrate), so that the suppression effect is enhanced.

Here, the term "total" refers to the case where the organic compound is "laurylphosphonic acid", the "action site" is "phosphonate group", and the "inhibition site" is "laurel base". 12. Further, in the case where the organic compound is "betaine", the "acting site" is "betaine structure" and the "acting site" is three "methyl groups", so the total number of carbon atoms is three.

Moreover, in one aspect of the present invention, the suppression portion has a total carbon number of 20 or less. Further, in one aspect of the invention, the suppression portion has a total carbon number of 18 or less. Further, in one aspect of the invention, the suppression portion has a total carbon number of 16 or less. When the organic chain (carbon number) of the site to be inhibited is too large, the solubility in the slurry (the composition for polishing) is lowered, so that the amount of the sufficient inhibitor (the organic compound of the present invention) required for suppression cannot be added. Further, when the organic chain is too long, the suppression site is easily bent (non-linear, in a state of being bent everywhere), and the density of the suppression film is lowered, or the rate of formation of the molecular alignment film is lowered, and the suppression effect is lowered.

Moreover, according to one aspect of the invention, the site to be inhibited is a site having an alkyl group having 1 or more carbon atoms. According to one form of the invention In the case, the inhibitory site is a moiety having an alkyl group having 4 or more carbon atoms. According to one aspect of the invention, the inhibitory site is a moiety having an alkyl group having 7 or more carbon atoms. According to a preferred embodiment of the present invention, the inhibiting site is a relatively short alkyl group having 1 to 6 carbon atoms, and the site of action is a betaine structure.

According to a preferred embodiment of the present invention, the inhibiting site is a moiety having an alkyl group having 8 or more carbon atoms. In this way, since the alkyl group is meaningfully long, the polishing component of the object to be polished is polished, and it is more effective to suppress the object to be polished. Further, according to a preferred embodiment of the present invention, the inhibiting site is a moiety having an alkyl group having 10 or more carbon atoms.

In addition, even if an organic compound has such a meaningfully long alkyl group, if there is no interaction site with the polishing target of the 矽-oxygen bond, the cerium oxide film or the like having a 矽-oxygen bond cannot be sufficiently controlled. Object. In other words, even if the polishing composition contains such an organic compound, it is not expected to sufficiently control the object to be polished having a cerium-oxygen bond such as a cerium oxide film in at least one of acidic, neutral or basic. Thus, the organic compound of the present invention is important in the presence of a site of action and a site of inhibition in one molecule.

According to a still further aspect of the present invention, the site to be inhibited is a site having an alkyl group having 11 or more carbon atoms. In a more preferred embodiment of the present invention, the site to be inhibited is a site having an alkyl group having 12 or more carbon atoms. According to a preferred embodiment of the present invention, the inhibiting site is a moiety having an alkyl group having a carbon number of 20 or less. According to a still further preferred embodiment of the present invention, the inhibiting site is a moiety having an alkyl group having a carbon number of 18 or less, More of the invention In the preferred form, it has a moiety having an alkyl group having 16 or less carbon atoms. By setting the upper limit of the carbon number of the alkyl group in the above-mentioned suppression site to such an extent, it is possible to add an additive which suppresses a sufficient amount required, and between the polishing component and the surface of the object to be polished (substrate) When the distance is sufficiently separated, the surface of the object to be polished (substrate) is protected by the molecular arrangement film having a high density.

Further, the alkyl group may be linear or branched, but in the case of branching, the number of organic molecules which can act in the same area is lowered (the density of organic molecules is lowered), so that the inhibition can be lowered. doubt. Further, in the branched alkyl group, the molecular arrangement speed of the suppression film composed of the organic compound (organic molecule of the inhibitor) is lowered due to the complicated structure. Therefore, it is preferably linear.

Further, the alkyl group may be substituted by a hydroxyl group, a halogen atom or the like.

Specific examples of the alkyl group having 1 to 20 carbon atoms are not particularly limited, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group. , pentyl, isopentyl, neopentyl, 2-ethylhexyl, hexyl, heptyl, octyl, decyl, decyl, undecyl, dodecyl, tridecyl, tetradecane Base (myristyl), pentadecyl, hexadecyl (palmityl), heptadecyl, octadecyl (stearyl), nonadecyl, eicosyl and the like. Further, the carbon number of the behenyl group or the like may be 20 or more. Further, it may have a partial unsaturated bond such as oleyl group. Further, preferred examples of the alkyl group in the organic compound used in the examples are exemplified.

Moreover, according to the preferred embodiment of the present invention, the site of inhibition In the organic compound of the present invention, the number of alkyl groups having 4 or more carbon atoms in the inhibiting moiety is preferably 1 to 3, and the molecule of the inhibitor organic molecule (the organic compound of the present invention) is used. The viewpoint of the ease of formation of the alignment film is more preferably one. Further, in a preferred embodiment of the present invention, in the organic compound of the present invention, the number of alkyl groups having 10 or more carbon atoms in the inhibiting portion is preferably 1 to 3, and the organic molecule of the inhibitor (organic of the present invention) The viewpoint of the ease of formation of the molecular alignment film of the compound) is more preferably one.

Above, the organic compound of the present invention is preferably lauryl betaine, 4-laurylpyridine N-oxide, N,N-dimethyldodecylamine N-oxide, N,N-dihydroxyethyl Laurylamine N-oxide, 4-heptylphenol, n-octylamine, decanoic acid, laurylphosphonic acid, betaine, 4-n-octylbenzenecarboxylic acid, ethylene glycol dibutyl ether, Heptyl methyl sulfide, 4-octylpyridine N-oxide, 4-hexylpyridine N-oxide, 4-butylpyridine N-oxide, 4-ethylpyridine N-oxide, carboxylato Methyloctyldimethylammonium, carboxymethylmethylhexyldimethylammonium, carboxymethylmethylbutyldimethylammonium N,N-dimethyldecylamine N-oxide, N,N-di Methyloctylamine N-oxide, N,N-dimethylhexylamine N-oxide, N,N-dimethylbutylamine N-oxide, N,N-dimethylethylamine N - Oxide, N-Lauroylsarcosine N-oxide, N,N-dimethyllaurylamine N-oxide (N,N-dimethyl Dodecylamine N-oxide) and N,N-dihydroxyethyl laurylamine N-oxide. These may be used alone or in combination of two or more.

Moreover, in accordance with a preferred embodiment of the present invention, the interaction is It is preferred that the chemical bond is selected from at least one selected from the group consisting of an ionic bond, a covalent bond, and a hydrogen bond. In the case of interaction, for example, by a hydrophobic interaction or an intermolecular force (van watt), there is a case where the object to be polished having a 矽-oxygen bond is not strongly adsorbed, and the effect of the present invention is not produced. In particular, the organic compound (polishing rate inhibitor) of the present invention which is adsorbed on the surface of the object to be polished (substrate) is not easily removed from the surface of the object to be polished (substrate) by the polishing pad or the polishing pad. At least one of a strong bond such as an ionic bond and a covalent bond is preferred.

In the present invention, the polishing rate of the object to be polished having the 矽-oxygen bond can be suppressed as long as it is in any range of acidity, neutrality or alkalinity, but from the viewpoint of being applicable to the versatility of various uses, In the case where the polishing efficiency of other polishing objects is preferentially controlled, etc., when the pH is changed, it is preferable to suppress the polishing rate of the object to be polished having the 矽-oxygen bond in all of the acidic, neutral or alkaline ranges. .

The content of the organic compound in the polishing composition of the present invention is not particularly limited, but is preferably 0.01 mM or more, more preferably 0.1 mM or more, still more preferably 0.5 mM or more, from the viewpoint of controlling the polishing efficiency. It is preferably 1.0 mM or more, more preferably 1.5 mM or more, still more preferably 2.0 mM or more, and particularly preferably 2.5 mM or more. Further, from the viewpoint of solubility or cost, it is preferably 100 mM or less, more preferably 50 mM or less, still more preferably 30 mM or less, still more preferably 20 mM or less, still more preferably 15 mM or less, still more preferably 10 mM or less. Particularly preferred is 5 mM or less.

As described above, the action site (especially N-oxide, betaine) of the present invention can be carried out on the surface of the object to be polished having a 矽-oxygen bond. Further, the chemical bonding is performed by the surface of the object to be polished facing the liquid receiving side or the surface of the object to form a molecular array film, which hinders the action of polishing the polishing component of the object to be polished. Since the inhibitory portion of the organic compound has high hydrophobicity, the organic compound having the same action site and the inhibitory site aggregates due to hydrophobic interaction, and forms a suppressing film on the surface of the object to be polished having a 矽-oxygen bond. Therefore, according to the present invention, it is possible to provide an abrasive object having a ruthenium-oxygen bond which can sufficiently control a ruthenium oxide film or the like in at least one of acidic, neutral or basic (preferably two or more or all ranges). A polishing composition for the polishing rate of the object.

Further, according to the present invention, it is possible to provide a polishing composition capable of sufficiently controlling the polishing rate of the object to be polished having a yttrium-oxygen bond such as a ruthenium oxide film. Therefore, for example, in the design of a semiconductor transistor structure, Inhibition of unintended layers is ground. In particular, the height of the suppression device is changed to improve the electrical characteristics or the reliability of the device.

[abrasive grain]

The polishing composition of the present invention contains abrasive grains.

The abrasive grains used may be any of inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include particles composed of a metal oxide such as cerium oxide, aluminum oxide, cerium oxide, or titanium oxide, cerium nitride particles, cerium carbide particles, and boron nitride particles. Specific examples of the organic particles include latex particles, polystyrene particles, and polymethyl methacrylate (PMMA) particles. The abrasive particles can be separated Use, or a combination of these or two or more types. Further, as the abrasive grains, a commercially available product or a synthetic product can be used.

The action of the abrasive grains is to remove the object to be polished by the abrasive grains, and to remove the object to be polished by mechanical action, but the action of the machine is greatly affected by the material or shape, particle size, and particle size distribution of the abrasive grains. The abrasive grains having a low Mohs hardness or the material which is easily crushed are mechanically weak, and can suppress the polishing rate of the object to be polished having a helium-oxygen bond such as a ruthenium oxide film. Since the shape of the particles is such that there is no surface unevenness, and the particles close to the true ball are weak to the pulling force of the object to be polished, the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film can be suppressed. Since the abrasive grains having a small particle diameter can reduce the stress on the surface of the object to be polished, the polishing rate of the object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film can be suppressed. The abrasive grains having a narrower range of the particle size distribution can reduce the force applied to each of the particles, so that the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film can be suppressed.

In particular, the Zeta potential of the abrasive grains is the same as that of the ruthenium oxide film, or the zeta potential difference is the same sign, and when it becomes larger, the repulsive force of static electricity generated between the particle-substrate surface increases, or the attraction force of static electricity decreases, and can be suppressed. The polishing rate of the object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film. However, by adjusting the action of the machine by such a method and suppressing the polishing rate of the ruthenium oxide film, it is often suppressed by the polishing efficiency of other film types, so that the polishing efficiency is preferably controlled by the effect of the additive.

Among these abrasive grains, cerium oxide is preferred, and from the viewpoint of suppressing the occurrence of abrasive damage, it is particularly preferred to be a colloidal group. Silica).

The type of the cerium sol which can be used is not particularly limited, and for example, a surface-modified cerium sol can be used. The surface modification (supporting ruthenium sol) of the ruthenium sol is carried out by mixing a metal such as aluminum, titanium or zirconium or an oxide thereof with a ruthenium sol to be doped on the surface of the cerium oxide particles.

Alternatively, it may be carried out by chemically bonding a functional group of an organic acid to the surface of the ceria particle, that is, immobilization of an organic acid.

Further, only the cerium sol and the organic acid coexist, and the immobilization of the organic acid of the cerium sol cannot be achieved. For example, when a sulfonic acid of one of organic acids is immobilized on a cerium sol, it can also be carried out, for example, by the method described in "Sulfonic acid-functionalized silica through of thiol groups", Chem. Commun. 246-247 (2003). Specifically, after coupling a decane coupling agent having a mercapto group such as 3-mercaptopropyltrimethoxydecane to a hydrazine sol, the sulfonic acid is oxidized by hydrogen peroxide to obtain a cerium sol having a sulfonic acid immobilized on the surface. . The cerium sol used in the examples also modified the sulfonic acid group.

Or, when a carboxylic acid of one of the organic acids is immobilized on the cerium sol, for example, "Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel", Chemistry Letters, 3, 228 The method described in -229 (2000) was carried out. Specifically, after coupling a decane coupling agent containing a photoreactive 2-nitrobenzyl ester to a cerium sol, a cerium sol in which a carboxylic acid is immobilized on a surface can be obtained by light irradiation.

Among them, from the viewpoint of easy production, a sulfonium sol having a sulfonic acid fixed is particularly preferable. Further, when the sulfonic acid is immobilized in the form of a cerium sol, the polishing rate of the object to be polished having a cerium-oxygen bond such as a cerium oxide film can be suppressed by the following mechanism.

The surface of the object to be polished having a yttrium-oxygen bond such as a general yttrium oxide film has an isoelectric point at a pH of about 2 and a surface zeta potential of 0, and a pH exceeding the pH of the isoelectric point is negatively charged. As the pH increases, the absolute value of this value becomes larger. The pH below is slightly positive, but is almost equal to the isoelectric point.

Therefore, the surface of the object to be polished having a 矽-oxygen bond such as a general ruthenium oxide film is negatively charged in a wide pH range. In order to suppress the polishing efficiency of such an object to be polished, it is effective to use abrasive grains having a negative zeta potential in a wide range. In such a wide pH range, the particles introduced into the negative zeta potential are effective for the acid group having a low pKa of the modified functional group on the surface of the abrasive grain. A typical acid group having a low pKa is preferably a sulfonic acid group. For this reason, the general sulfonic acid gene has a pKa of 1 or less. Therefore, the sulfonic acid can be modified on the surface of the abrasive grains to obtain negatively-charged abrasive grains in a pH range of 1 or more. When the abrasive grain having a negative value is used and the polishing target having a negative value is used, the polishing object having a yttrium-oxygen bond such as a cerium oxide film is polished, and electrical repulsion occurs between the abrasive grain-substrate in a wide pH range. Therefore, it is an effective means for suppressing the polishing efficiency of the object to be polished.

In the above, the preferred embodiment is a method for producing an anionic sol, but it may be an abrasive granule produced by a method for producing a cationic sol. Other composite abrasive particles or abrasive particles having a core-core configuration may also be used.

The lower limit of the average primary particle diameter of the abrasive grains in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, still more preferably 10 nm or more, still more preferably 15 nm or more, and particularly preferably 25 nm or more. Further, the upper limit of the average primary particle diameter of the abrasive grains is preferably 200 nm or less, more preferably 150 nm or less, still more preferably 100 nm or less, still more preferably 70 nm or less, still more preferably 60 nm or less, and particularly preferably 50 nm or less. .

In such a range, the surface of the object to be polished after polishing using the polishing composition can suppress defects such as scratches. Further, the average primary particle diameter of the abrasive grains is calculated based on, for example, the specific surface area of the abrasive grains measured by the BET method. Embodiments of the invention are also calculated as such.

The lower limit of the average secondary particle diameter of the abrasive grains in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, still more preferably 10 nm or more, still more preferably 26 nm or more, and still more preferably 36 nm or more. More preferably, it is 45 nm or more, and particularly preferably 55 nm or more. Further, the upper limit of the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 260 nm or less, still more preferably 220 nm or less, still more preferably 150 nm or less, still more preferably 120 nm or less, and even more preferably 100 nm or less, particularly preferably 80 nm or less. In such a range, the surface of the object to be polished after polishing using the polishing composition can more effectively suppress surface defects. In particular, when the average secondary particle diameter of the abrasive grains is lowered, the polishing rate of the object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film can be suppressed.

Here, the term "secondary particle" as used herein refers to a particle formed by agglomerating particles in a polishing composition, and the average of the secondary particles is twice. The particle diameter can be measured by a dynamic light scattering method represented by, for example, a laser diffraction scattering method. Embodiments of the invention are also calculated as such.

In the particle size distribution obtained by the laser diffraction scattering method of the abrasive grains in the polishing composition, the particle diameter D90 of the particle mass reaches 90% of the total particle mass from the particle side and reaches the full particle The ratio of the ratio of the diameter D10 of the particles at 10% of the particle mass (may be referred to as "D90/D10" in the present specification) is preferably 1.1 or more, more preferably 1.2 or more, and still more preferably 1.3 or more. , especially good for 1.4 or more. The upper limit of D90/D10 is not particularly limited, but is preferably 5.0 or less, more preferably 3.0 or less, still more preferably 2.5 or less, still more preferably 2.0 or less, and particularly preferably 1.8 or less. Embodiments of the invention are also calculated as such. In such a range, the surface of the object to be polished after polishing using the polishing composition can more effectively suppress surface defects. If D90/D10 is small (close to 1.0), it means that the width of the particle size distribution is narrow. As this value becomes larger, it means that the width of the particle size distribution is wider. Regarding the influence of the value of D90/D10 which affects the polishing efficiency of cerium oxide, the smaller the D90/D10 becomes, the stress applied to one particle (action point) is dispersed (the force is uniformly applied for each point of action), and therefore, The smaller the value of D90/D10 becomes, the higher the suppression effect becomes. On the other hand, when the value of D90/D10 is large (the particle size distribution is wide), the difference between the large particles and the small particles is large, and the force is applied to the large particles, so that the strain on the surface of the substrate becomes large, and the polishing efficiency is improved.

The lower limit of the content of the abrasive grains in the polishing composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and still more preferably 0.5% by mass or more, particularly preferably 1 quality %the above. When the lower limit is in this range, it is preferable to obtain a sufficient polishing efficiency for an object to be polished other than the object to be polished having a yttrium-oxygen bond such as a ruthenium oxide film.

Moreover, the upper limit of the content of the abrasive grains in the polishing composition is preferably 50% by mass or less, more preferably 20% by mass or less, still more preferably 10% by mass or less, and still more preferably 8% by mass or less. More preferably, it is 6% by mass or less, and particularly preferably 4% by mass or less. When the upper limit is in this range, the cost of the polishing composition can be suppressed, and the surface of the object to be polished after polishing using the polishing composition can suppress the occurrence of surface defects. In particular, when the content of the abrasive grains in the polishing composition is lowered, the polishing rate of the object to be polished having a bismuth-oxygen bond such as a ruthenium oxide film can be suppressed.

[Disperse media]

In the polishing composition of the present invention, a dispersion medium can be used in order to disperse each component. The dispersing medium is, for example, an organic solvent or water, and preferably contains water.

From the viewpoint of hindering the action of contamination or other components of the object to be polished, it is preferable to use water containing no impurities as much as possible. Specifically, it is preferred that the impurity ions are removed by the ion exchange resin, and the pure water or ultrapure water or distilled water of the foreign matter is removed by a filter.

[grinding object]

As described above, the present invention provides a polishing composition which can sufficiently control an object to be polished having a 矽-oxygen bond in at least one of acidic, neutral or basic.

Examples of the object to be polished having a 矽-oxygen bond include a ruthenium oxide film, BD (black diamond: SiOCH), FSG (Fluorinated Silicate Glass), HSQ (hydropersesquioxanes), CYCLOTENE, and SiLK. , MSQ (Methyl silsesquioxane) and the like.

[Other ingredients]

The polishing composition of the present invention may further contain other components such as a pH adjuster, an oxidizing agent, a reducing agent, a surfactant, a water-soluble polymer, and an antifungal agent, as needed.

The pH adjuster, the oxidizing agent, the reducing agent, the surfactant, the water-soluble polymer, and the antifungal agent will be described below.

In addition, if it includes an action site that interacts with the object to be polished having a 矽-oxygen bond, and a compound that suppresses polishing of the polishing component of the object to be polished close to the site of the object to be polished, the compound may be used as "other The case where the component "acts" is classified into the organic compound of the present invention in the present invention.

(pH adjuster)

The polishing composition of the present invention is in a range of at least one of acidic, neutral or alkaline, and suppresses the polishing rate of the object to be polished having the oxime-oxygen bond. Therefore, the pH adjusting agent is preferably used in the range of adjustment to be particularly acidic or alkaline.

In the present invention, the acidic range means that the pH is less than 7, preferably pH1~4. Further, in the present invention, the neutral range means pH 7. Further, in the present invention, the alkaline range means more than pH 7, preferably pH 8 to 13. Further, the value of the pH in the present invention means a value measured under the conditions described in the examples.

Specific examples of the pH adjuster adjusted to an acidic range may be either an inorganic compound or an organic compound. For example, inorganic acids such as sulfuric acid (H ₂ SO ₄ ), nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid; citric acid, formic acid, acetic acid, propionic acid, benzoic acid, salicylic acid, glyceric acid, Organic acids such as oxalic acid, malonic acid, succinic acid, maleic acid, phthalic acid, malic acid, tartaric acid, and lactic acid, and organic sulfuric acid such as methanesulfonic acid, ethanesulfonic acid, and isethionic acid Wait. Further, in the case where the acid is a divalent or higher acid (for example, sulfuric acid, carbonic acid, phosphoric acid, oxalic acid or the like), the salt may be in a state of being able to release one or more protons (H ⁺ ). Specifically, for example, ammonium hydrogencarbonate or ammonium hydrogen phosphate (a type of a balanced cationic species is basically preferable, but a weak base cation (ammonium, triethanolamine, etc.) is preferable).

In particular, in the case of using a salt form, the lower the salt concentration (the electrical conductivity of the slurry), the more the polishing rate of the object to be polished having a bismuth-oxygen bond such as polycrystalline germanium can be suppressed.

Further, the salt concentration (the electrical conductivity of the slurry) becomes high, and the thickness of the electric double layer on the surface of the abrasive grain becomes thin. Therefore, since the repulsive force of the static electricity of the abrasive grains is weak, there is a concern that the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film is increased. Therefore, in the polishing composition of the present invention, it is more preferable to use a pH adjuster for adjusting the range of acidity. This salt For example, an ammonium salt, a potassium salt of an organic acid such as an ammonium salt, a potassium salt, an amine salt, an acetic acid, a citric acid, an oxalic acid or a male acid such as a halogen acid such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid or carbonic acid; Amine salt.

Specific examples of the pH adjuster to be adjusted to the alkaline range may be any of an inorganic compound and an organic compound, and examples thereof include an alkali metal hydroxide or a salt thereof, a fourth ammonium salt, a fourth ammonium hydroxide or Its salt, ammonia, amine and so on.

Specific examples of the alkali metal include potassium, sodium, and the like. Specific examples of the salt include carbonates, hydrogencarbonates, sulfates, and acetates.

Specific examples of the fourth-order ammonium include tetramethylammonium, tetraethylammonium, and tetrabutylammonium.

The fourth-order ammonium hydroxide or a salt thereof may, for example, be tetramethylammonium hydroxide, tetraethylammonium hydroxide or tetrabutylammonium hydroxide.

Among them, in the polishing composition, the alkali is more preferably contained in ammonia, amine or potassium from the viewpoint of preventing metal contamination or easiness of diffusion of metal ions in the structure of the semiconductor device. Specific examples thereof include potassium hydroxide (KOH), potassium carbonate, potassium hydrogencarbonate, potassium sulfate, potassium acetate, potassium chloride, and the like.

(oxidant)

Specific examples of the oxidizing agent include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, and perchloric acid; sodium persulfate, potassium persulfate, ammonium persulfate, potassium peroxymonosulfate, and potassium peroxymonosulfate. Persulfate, hypochlorite, chlorite, chlorate, perchlorate, etc., such as salt (Oxone) (2KHSO ₅ .KHSO ₄ .K ₂ SO ₄ ) a halogen oxidizing agent such as a hypobromite, a bromate, a bromate, a perbromate, a hypoiodide, a iodate, an iodate or a periodate; A compound such as potassium permanganate or potassium chromate which has a broad metal oxide number. These oxidizing agents may be used singly or in combination of two or more kinds.

The lower limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 0.001% by mass or more, and more preferably 0.01% by mass or more. When the oxidizing agent is added to the above-mentioned range, when the oxidizing agent is added, the polishing target having the polishing efficiency can be improved, and the polishing target having the 矽-oxygen bond can be improved without increasing the polishing particle concentration. The advantage of grinding efficiency. Moreover, the upper limit of the content (concentration) of the oxidizing agent in the polishing composition is preferably 30% by mass or less, and more preferably 10% by mass or less. By setting the upper limit in this range, in addition to suppressing the material cost of the polishing composition, there is an advantage that the treatment of the polishing composition after polishing can be reduced, that is, the burden of waste liquid treatment. Further, there is an advantage that excessive oxidation of the surface of the object to be polished by the oxidizing agent is less likely to occur.

(reducing agent)

Further, the polishing composition of the present invention may contain a reducing agent. The reducing agent may also contain a conventionally known one used for the polishing composition. For example, the organic substance is a reducing sugar such as hydrazine, formic acid, oxalic acid, aqueous formaldehyde solution, ascorbic acid or glucose, and the inorganic substance may be nitrous acid or a salt thereof, phosphorous acid or a salt thereof. , hypophosphorous acid or its salt, sulfurous acid or its salt, thiosulfuric acid or its salt, aluminum hydride Lithium, sodium borohydride, metals with a number of valences and their compounds. By suppressing oxidation of any metal with a reducing agent, corrosion of the metal or controllable polishing efficiency can be suppressed.

The lower limit of the content (concentration) of the reducing agent in the polishing composition is preferably 0.001% by mass or more, and more preferably 0.01% by mass or more. When the lower limit is set in this range, when the reducing agent is added, if the object to be polished other than the object to be polished having the 矽-oxygen bond is polished by polishing, the polishing particle concentration is not increased, and the polishing efficiency can be improved. advantage. Further, by adding a reducing agent, it is possible to suppress corrosion in the case where an arbitrary object is contained in the object to be polished. Moreover, the upper limit of the content (concentration) of the reducing agent in the polishing composition is preferably 30% by mass or less, and more preferably 10% by mass or less. By setting the upper limit in this range, in addition to suppressing the material cost of the polishing composition, there is an advantage that the treatment of the polishing composition after polishing can be reduced, that is, the burden of waste liquid treatment.

(surfactant)

The polishing composition may also contain a surfactant. The surfactant can impart hydrophilicity to the polished surface after polishing, thereby improving the cleaning efficiency after polishing and preventing the adhesion of dirt and the like. Further, not only the detergency is improved, but also the step performance such as dishing can be improved by selecting an appropriate surfactant.

The surfactant may be any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant. These surfactants may be used alone or in combination More than two types are used.

The content of the surfactant in the polishing composition is preferably 0.001 g/L or more, more preferably 0.005 g/L or more. By setting this lower limit, the cleaning efficiency after polishing is further improved. Further, by selecting an appropriate surfactant, the step performance of the depression or the like can be improved.

(water soluble polymer)

The water-soluble polymer is a case where the water-soluble polymer is dissolved in water at a concentration of 0.5% by mass at the maximum dissolved temperature, and is filtered by using a G2 glass filter (maximum pore size: 40 to 50 μm). The mass of the insoluble matter is within 50% by mass of the water-soluble polymer to be added.

When a water-soluble polymer is added to the polishing composition, the surface roughness of the object to be polished after polishing using the polishing composition is further reduced. These water-soluble polymers may be used alone or in combination of two or more.

The content of the water-soluble polymer in the polishing composition is preferably 0.01 g/L or more, more preferably 0.05 g/L or more. By setting this lower limit, the surface roughness of the polishing surface by the polishing composition is further reduced.

The content of the water-soluble polymer in the polishing composition is preferably 100 g/L or less, more preferably 50 g/L or less. By setting it as such a lower limit, the residual amount of the water-soluble polymer on the polished surface can be reduced, and the washing efficiency can be further improved.

(mold inhibitor)

A preservative and an antifungal agent which may be added to the polishing composition of the present invention, and examples thereof include 2-methyl-4-isothiazolin-3-one or 5-chloro-2-methyl-4-isothiazole. An isothiazolin-based preservative such as oxaz-3-one, a parahydroxy-benzoate or a phenoxyethanol. These preservatives and antifungal agents may be used singly or in combination of two or more.

As described above, in particular, an organic compound having an action site for causing interaction with an object to be polished having a 矽-oxygen bond and a polishing component for polishing the object to be polished is suppressed from being close to the site of suppression of the object to be polished. With the constitution of the composition, the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film can be sufficiently controlled. Here, the polishing environment is appropriately adjusted for the purpose of polishing or the like. That is, there are cases where the polishing is performed in an acidic environment, and the polishing is performed in a neutral environment, and the polishing is performed in an alkaline environment. In other words, the present invention suppresses the polishing rate of the object to be polished having the oxime-oxygen bond in at least one of acidic, neutral or alkaline, and therefore, it is suitably selected and used in a specific pH range in accordance with the polishing use or the like. The polishing composition having a polishing rate of a polishing target having a ruthenium-oxygen bond such as a ruthenium oxide film can be sufficiently controlled. Therefore, when considering another point of view, it is meaningless to compare the polishing speed between different pH ranges.

Here, the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film in an acidic environment is preferably less than 155 [Å/min], more preferably 150 [Å/min] or less, and further Preferably, it is 135 [Å/min] or less, more preferably 100 [Å/min] or less, and even more preferably 80 [Å/min] or less. More preferably, it is 70 [Å/min] or less, more preferably 50 [Å/min] or less, and particularly preferably 30 [Å/min] or less. The lower limit is not particularly limited, and is substantially 0 [Å/min] or more.

Proof of the Example/Comparative Example The sol-gel zeta potential of the abrasive particles used in the experiment has a minus charge on the acidic side. Here, in the case of using a ruthenium sol as an abrasive grain, there is a condition that it is difficult to suppress the polishing rate in an acidic environment, but the focus of the present invention can be suppressed under acidic conditions.

The polishing rate of the object to be polished having a bismuth-oxygen bond such as a cerium oxide film in a neutral environment is preferably less than 15 [Å/min], more preferably 14 [Å/min] or less, and more preferably 13 [Å/min] or less. The lower limit is not particularly limited, and is substantially 0 [Å/min] or more.

The polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film in an alkaline environment is preferably less than 10 [Å/min], more preferably 9 [Å/min] or less, and even more preferably 8 [Å/min] or less. The lower limit is not particularly limited, and is substantially 0 [Å/min] or more.

Further, the polishing rate means a value measured by the method described in the examples.

Further, the effect of the technique of the present invention is not limited to the case where the object to be polished having a helium-oxygen bond such as a ruthenium oxide film can be sufficiently controlled, and the object to be polished contains polycrystalline germanium or a nitride film, and the polishing rate thereof By the same extent, the polishing rate of the object to be polished having a 矽-oxygen bond such as a ruthenium oxide film can be suppressed.

<Method for Producing Polishing Composition>

The present invention provides a method for producing a polishing composition which inhibits the polishing rate of the polishing target having the oxime-oxygen bond in at least one of acidic, neutral or basic, and has a mixed (1) organic compound. (2) an abrasive particle; and (3) a dispersion medium, wherein the organic compound includes an action site that interacts with the object to be polished having a 矽-oxygen bond, and a polishing component that inhibits polishing the object to be polished is close to the object to be polished A method for producing a polishing composition for a suppression portion.

The method for producing the polishing composition is not particularly limited, and may be obtained by stirring and mixing the components constituting the polishing composition of the present invention and, if necessary, other components in a dispersion medium.

The temperature at the time of mixing each component is not particularly limited, but is preferably 10 to 40 ° C, and can be heated in order to increase the dissolution rate. Further, the mixing time is also not particularly limited.

<grinding method>

The present invention provides a polishing method for polishing an object to be polished having a bismuth-oxygen bond by the polishing composition or the polishing composition obtained by the above-described production method.

As the polishing apparatus, a general polishing apparatus in which a carrier for holding a substrate to be polished or the like, a motor that can change the number of revolutions, and the like, and a polishing platen to which a polishing pad (abrasive cloth) can be attached can be used.

The polishing pad is not particularly limited, and a general nonwoven fabric, a polyurethane, a porous fluororesin or the like can be used. The polishing pad is preferably applied The groove in which the polishing composition is accumulated can be processed.

The polishing conditions are also not particularly limited. For example, the number of revolutions of the polishing platen is preferably 10 to 500 rpm, and the number of rotations of the polishing head (carrier) is preferably 10 to 500 rpm, and the pressure applied to the substrate having the object to be polished (grinding pressure) It is preferably 0.1 to 10 psi. The method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying a pump or the like can be employed. The amount of supply is not particularly limited, but it is often preferred to cover the surface of the polishing pad with the polishing composition of the present invention. Further, the polishing time is also not particularly limited.

<Method of suppressing the polishing rate of the object to be polished having a 矽-oxygen bond>

The present invention provides a method for suppressing the polishing rate of the object to be polished having a bismuth-oxygen bond in at least one of acidity, neutrality, or alkalinity by using the following components (1) to (3). The above (1) includes an organic compound having an action site for interacting with a polishing target having a 矽-oxygen bond and a suppressing portion where the polishing component for polishing the polishing target is close to the polishing target; (2) abrasive particles And (3) dispersing media.

The specific description of the constituent elements of the invention is the same as described above, and the description is omitted here.

[Examples]

The invention will be described in more detail using the following examples and comparative examples. However, the scope of the technology of the present invention is not limited to the following embodiments.

(modulation of the composition for polishing)

By grinding particles (sulfonic acid group-modified cerium sol; average primary particle diameter: 35 nm, average secondary particle diameter: 65 nm, D90/D10: 1.6) 2% by mass, pH adjuster, organic compound 3 mM shown in Table 1 The composition for polishing of the examples and the comparative examples was mixed in pure water (mixing temperature: about 25 ° C, mixing time: about 10 minutes).

Further, the concentrations of the tertiary amines of the following starting materials of Examples 13 to 15 were set to 3 mM.

Further, N-Lauroylsarcosine N-oxide and N,N-dimethyllaurylamine N-oxide (N,N-dimethyl methoxide) of Examples 13 to 15 The dodecylamine N-oxide) and the N,N-dihydroxyethyl laurylamine N-oxide are prepared as follows.

That is, the tertiary amine of the starting material (in other words, N-Lauroylsarcosine, N,N-Dimethyllaurylamine, and N-lauryldiethanolamine) (N-Lauryldiethanolamine)) 10 g of each of them was weighed, and a 31 wt% H ₂ O ₂ (90 g) preparation solution was added thereto. Then, the solution was stirred for 2 hours to prepare the organic compounds of Examples 13 to 15.

Further, the pH was adjusted by adding an appropriate amount of H ₂ SO ₄ and KOH to adjust the pH of the polishing composition to 2, 7, and 10.

The pH of the polishing composition (liquid temperature: 25 ° C) was confirmed by a pH meter (model: LAQUA, manufactured by Horiba, Ltd.).

(grinding performance evaluation)

Using the polishing compositions of the examples and the comparative examples obtained, the polishing rate when the object to be polished (wafer containing the yttrium oxide film) was polished using the following polishing conditions was measured.

<grinding conditions>

Grinder: Single-sided CMP Grinder (ENGIS)

Polishing pad: Polyurethane pad (IC1010: manufactured by rohm-and-haas)

Pressure: 3.04 psi

Platen (platen) revolutions: 90rpm

Grinding head (vehicle) revolutions: 40rpm

Flow rate of the polishing composition: 100 ml/min

Grinding time: 60sec

<grinding speed>

The polishing rate (grinding rate) was calculated by the following formula.

The film thickness was determined by an optical interference film thickness measuring device (Model: Lambda Ace, manufactured by Dainippon SCREEN Co., Ltd.), and the polishing time was divided by the difference to evaluate.

The measurement results of the polishing rate are shown in Table 1 below.

<inspection>

As is apparent from Table 1, according to the polishing composition of the present invention, the polishing rate of the cerium oxide film can be more suppressed than the polishing composition of the comparative example.

Further, in the polishing composition of the comparative example, since the surface of the object to be polished having the 矽-oxygen structure does not have an active portion, it is shown that the polishing rate of the ruthenium oxide film cannot be suppressed. In contrast to Comparative Example 1, since the polishing rate of the ruthenium oxide film was increased, the organic compound described above showed a structure having an improved polishing rate of the ruthenium oxide film.

Further, Comparative Example 10, Comparative Example. Since the organic compound of 11 is a tertiary amine, a comparative example in which the surface of the object to be polished having a 矽-oxygen structure does not have a site of action is used. However, the organic compounds of the comparative examples were subjected to tertiary amine-N-oxide formation, and as shown in Example 14 and Example 15, respectively, N,N-dimethyldodecylamine N-oxide, N When N-dihydroxyethyl laurylamine N-oxide is used, it exhibits an effect of suppressing the polishing rate. In Example 14 and Example 15, it is presumed that the organic compounds are the same as those of Examples 3 and 4, respectively, but the former contains an oxidizing agent (H ₂ O ₂ ) which is not completely reacted in the synthesis process, so that the respective polishing rates can be seen. The values are different.

In addition, the present application is based on Japanese Patent Application No. 2015-31036, filed on Feb. 19, 2015, and Japanese Patent Application No. 2015-192756, filed on Sep. 30, 2015, Quote its disclosure.

Claims (10)

A polishing composition comprising the following components (1) to (3), wherein the polishing rate of the object to be polished having the 矽-oxygen bond is suppressed in at least one of acidic, neutral or alkaline; The component (1) has an action site that interacts with the object to be polished having a 矽-oxygen bond, and an organic compound that inhibits the polishing component of the object to be polished from approaching the site of the object to be polished; (2) abrasive grain And (3) dispersing media. The polishing composition according to claim 1, wherein the inhibitory portion is a portion having a carbon number of 3 or more. The polishing composition according to claim 1 or 2, wherein the action site has at least one selected from the group consisting of a nitrogen atom, an oxygen atom, a sulfur atom, and a phosphorus atom. The polishing composition according to any one of claims 1 to 3, wherein the action site has a structure in which a nitrogen atom and an oxygen atom are directly bonded, or a nitrogen atom and an oxygen atom are sandwiched between carbon atoms and 3 or less. The divalent organic group. The polishing composition according to any one of claims 1 to 3, wherein the action site is selected from the group consisting of a sulfide ion group, an amine group, a phosphonic acid group or a salt thereof, an N-oxide structure, a carboxyl group or At least one of a group consisting of a salt group, a phenol structure, an alkylene oxide structure, and a betaine structure. The polishing composition according to claim 5, wherein the action site is at least one of an N-oxide structure and a betaine structure. The polishing composition according to any one of claims 1 to 6, wherein the polishing rate of the object to be polished having the oxime-oxygen bond is suppressed in all ranges of acidity, neutrality or alkalinity. The polishing composition according to any one of the items 5 to 7, wherein the site of action is a betaine structure, and the organic group of the site of inhibition is a site having an alkyl group having 8 or more carbon atoms. The polishing composition according to any one of claims 1 to 8, wherein the inhibitory site is a moiety having an alkyl group having 10 or more carbon atoms. A method of polishing an object having a bismuth-oxygen bond by at least one of acidic, neutral or alkaline, by using the polishing composition according to any one of claims 1 to 9 The polishing rate of the object to be polished is suppressed.