TW201635515A - Display apparatus - Google Patents

Display apparatus Download PDF

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Publication number
TW201635515A
TW201635515A TW104110501A TW104110501A TW201635515A TW 201635515 A TW201635515 A TW 201635515A TW 104110501 A TW104110501 A TW 104110501A TW 104110501 A TW104110501 A TW 104110501A TW 201635515 A TW201635515 A TW 201635515A
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Taiwan
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photoelectric conversion
conversion cells
sub
display device
light
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TW104110501A
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Chinese (zh)
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劉勝發
邱繼毅
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中華映管股份有限公司
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Publication of TW201635515A publication Critical patent/TW201635515A/en

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Abstract

A display apparatus including a first substrate, a second substrate opposite to the first substrate, a pixel array disposed between the first substrate and the second substrate and a photoelectric conversion array disposed between the pixel array and the second substrate is provided. The pixel array includes sub-pixel units. An initial light from each of the sub-pixel units converts into an electrical energy and a display light by the photoelectric conversion array. The electrical energy is stored and the display light passes through the second substrate to display an image. Display lights presented by two adjacent sub-pixel units have different wavelengths. The photoelectric conversion array includes photoelectric conversion cells. An area of each of the photoelectric conversion cells covers the two adjacent sub-pixel units and is partially overlapped with an area of another photoelectric conversion cell. Different photoelectric conversion cells covering the same sub-pixel unit have different absorbing wavelengths.

Description

顯示裝置 Display device

本發明是有關於一種光電裝置,且特別是有關於一種顯示裝置。 This invention relates to an optoelectronic device and, more particularly, to a display device.

以顯示介質的種類來區分,顯示裝置可分為多種,例如:液晶顯示裝置、有機發光二極體顯示裝置、電泳顯示裝置等,其中有機發光二極體顯示裝置具有易薄型化、高色彩飽和度等優點,因此近年來備受重視。 The display device can be classified into a plurality of types, such as a liquid crystal display device, an organic light emitting diode display device, an electrophoretic display device, etc., wherein the organic light emitting diode display device has an easy thickness and high color saturation. Therefore, it has received much attention in recent years.

一般而言,有機發光二極體顯示裝置的色彩化機制可分為二種。一種色彩化機制是,有機發光二極體顯示裝置具有能夠分別發出紅光、綠光及藍光的多個有機發光單元,藉由各色光的有機發光單元來顯示彩色畫面。然而,受限於紅光、綠光及藍光有機發光單元的製程能力要求較高及材料價格居高不下的問題,此類顯示裝置的應用並不普及。另一種色彩化機制是,有機發光二極體顯示裝置利用能夠發光的有機發光單元(例如:白光有機發光二極體層)與彩色濾光陣列互相搭配,以顯示彩色畫面。受惠於能夠發光的有機發光單元(例如:白光有機發光二極體層) 的製程簡單及彩色濾光陣列的技術成熟,此類顯示裝置的應用相對普及。然而,由於彩色濾光陣列的濾光作用會大幅損耗來自顯示單元的光能,因此,此類的顯示裝置仍有耗能的缺點。 In general, the colorization mechanism of an organic light emitting diode display device can be divided into two types. A coloring mechanism is that the organic light emitting diode display device has a plurality of organic light emitting units capable of emitting red light, green light, and blue light, respectively, and the color light is displayed by the organic light emitting unit of each color light. However, due to the high process capability requirements of red, green and blue organic light-emitting units and the high material prices, the application of such display devices is not widespread. Another coloring mechanism is that the organic light emitting diode display device uses an organic light emitting unit capable of emitting light (for example, a white organic light emitting diode layer) and a color filter array to match each other to display a color picture. Benefit from organic light-emitting units capable of emitting light (for example: white organic light-emitting diode layer) The process is simple and the technology of the color filter array is mature, and the application of such a display device is relatively popular. However, such a display device still has the disadvantage of consuming energy because the filtering effect of the color filter array greatly degrades the light energy from the display unit.

本發明提供一種顯示裝置,可顯示彩色畫面更可有效利用能源。 The present invention provides a display device capable of displaying a color picture and making more efficient use of energy.

本發明提供一種顯示裝置,包括第一基板、相對於第一基板的第二基板、配置於第一基板與第二基板之間的畫素陣列以及配置於畫素陣列與第二基板之間的光電轉換陣列。畫素陣列包括多個子畫素單元。來自每一子畫素單元的初始光經過光電轉換陣列轉換成電能與顯示光。電能被儲存而顯示光穿出第二基板以顯示畫面。相鄰兩個子畫素單元呈現的顯示光具有不同波長。光電轉換陣列包括多個光電轉換胞。每一光電轉換胞的面積遮蓋兩個相鄰的子畫素單元並部分重疊另一個光電轉換胞的面積。遮蓋同一個子畫素單元的不同光電轉換胞具有不同的吸收波長。 The present invention provides a display device including a first substrate, a second substrate relative to the first substrate, a pixel array disposed between the first substrate and the second substrate, and a pixel array disposed between the pixel array and the second substrate Photoelectric conversion array. The pixel array includes a plurality of sub-pixel units. The initial light from each sub-pixel unit is converted into electrical energy and display light by a photoelectric conversion array. The electrical energy is stored and the display light passes through the second substrate to display a picture. The display lights presented by two adjacent sub-pixel units have different wavelengths. The photoelectric conversion array includes a plurality of photoelectric conversion cells. The area of each photoelectric conversion cell covers two adjacent sub-pixel units and partially overlaps the area of another photoelectric conversion cell. Different photoelectric conversion cells covering the same sub-pixel unit have different absorption wavelengths.

在本發明的一實施例中,上述的子畫素單元包括多個第一子畫素單元、多個第二子畫素單元與多個第三子畫素單元。光電轉換胞包括多個第一光電轉換胞、多個第二光電轉換胞與多個第三光電轉換胞。每一第一光電轉換胞、每一第二光電轉換胞以及每一第三光電轉換胞分別具有不同的吸收波長。每一第一子畫素單元被相重疊的其中一個第二光電轉換胞以及其中一個第三光 電轉換胞遮蓋且被第一光電轉換胞暴露,使得來自每一第一子畫素單元的初始光所轉換成的顯示光具有第一顏色。每一第二子畫素單元被相重疊的其中一個第一光電轉換胞以及其中一個第三光電轉換胞遮蓋且被第二光電轉換胞暴露,使得自每一第二子畫素單元的初始光所轉換成的顯示光具有第二顏色。每一第三子畫素單元被相重疊的其中一個第一光電轉換胞以及其中一個第二光電轉換胞遮蓋且被第三光電轉換胞暴露,使得自每一第三子畫素單元的初始光所轉換成的顯示光具有第三顏色。 In an embodiment of the invention, the sub-pixel unit includes a plurality of first sub-pixel units, a plurality of second sub-pixel units, and a plurality of third sub-pixel units. The photoelectric conversion cell includes a plurality of first photoelectric conversion cells, a plurality of second photoelectric conversion cells, and a plurality of third photoelectric conversion cells. Each of the first photoelectric conversion cells, each of the second photoelectric conversion cells, and each of the third photoelectric conversion cells respectively have different absorption wavelengths. One of the second photoelectric conversion cells and one of the third light each of the first sub-pixel units are overlapped The electric conversion cells are covered and exposed by the first photoelectric conversion cells such that the display light converted from the initial light from each of the first sub-pixel units has a first color. Each of the second sub-pixel units is covered by one of the first photoelectric conversion cells and one of the third photoelectric conversion cells and is exposed by the second photoelectric conversion cell such that initial light from each of the second sub-pixel units The converted display light has a second color. Each of the third sub-pixel units is covered by one of the first photoelectric conversion cells and one of the second photoelectric conversion cells and is exposed by the third photoelectric conversion cell such that initial light from each of the third sub-pixel units The converted display light has a third color.

在本發明的一實施例中,上述的每一第一光電轉換胞的吸收波長範圍大於620奈米。 In an embodiment of the invention, each of the first photoelectric conversion cells has an absorption wavelength range greater than 620 nm.

在本發明的一實施例中,上述的每一第二光電轉換胞的吸收波長範圍為500奈米到620奈米。 In an embodiment of the invention, each of the second photoelectric conversion cells has an absorption wavelength ranging from 500 nm to 620 nm.

在本發明的一實施例中,上述的每一該第三光電轉換胞的吸收波長範圍等於或小於500奈米。 In an embodiment of the invention, each of the third photoelectric conversion cells has an absorption wavelength range equal to or less than 500 nm.

在本發明的一實施例中,上述的第一光電轉換胞相較於第二光電轉換胞與第三光電轉換胞接近畫素陣列,且第一光電轉換胞的吸收波長相較於第二光電轉換胞與第三光電轉換胞的吸收波長更長。 In an embodiment of the invention, the first photoelectric conversion cell is closer to the pixel array than the second photoelectric conversion cell and the third photoelectric conversion cell, and the absorption wavelength of the first photoelectric conversion cell is compared to the second photoelectric The absorption wavelength of the conversion cell and the third photoelectric conversion cell is longer.

在本發明的一實施例中,上述的每一第一光電轉換胞重疊於其中一個第二光電轉換胞以及其中一個第三光電轉換胞而定義出遮光區。相鄰兩個第一光電轉換胞之間的區域、相鄰兩個第二光電轉換胞之間的區域與相鄰兩個第三光電轉換胞之間的區域 分別定義出透光區。 In an embodiment of the invention, each of the first photoelectric conversion cells overlaps one of the second photoelectric conversion cells and one of the third photoelectric conversion cells to define a light shielding region. a region between adjacent two first photoelectric conversion cells, a region between adjacent two second photoelectric conversion cells, and a region between adjacent two third photoelectric conversion cells The light transmission area is defined separately.

在本發明的一實施例中,上述的每一子畫素單元包括主動元件以及與主動元件電性連接的顯示單元。 In an embodiment of the invention, each of the sub-pixel units includes an active component and a display unit electrically connected to the active component.

在本發明的一實施例中,上述的顯示單元為有機發光二極體。 In an embodiment of the invention, the display unit is an organic light emitting diode.

在本發明的一實施例中,上述的顯示裝置更包括儲電單元以及驅動單元。儲電單元電性連接於光電轉換胞以儲存電能。驅動單元電性連接於儲電單元與畫素陣列之間。驅動單元運用電能而驅動子畫素單元。 In an embodiment of the invention, the display device further includes a power storage unit and a driving unit. The power storage unit is electrically connected to the photoelectric conversion cell to store electrical energy. The driving unit is electrically connected between the power storage unit and the pixel array. The drive unit uses the electrical energy to drive the sub-pixel unit.

在本發明的一實施例中,上述的顯示裝置更包括電能調整單元,電性連接於光電轉換胞與儲電單元之間。電能調整單元接收具有不同吸收波長的光電轉換胞所提供的電能,並在調整電能後將電能傳遞至儲電單元儲存。 In an embodiment of the invention, the display device further includes a power adjustment unit electrically connected between the photoelectric conversion cell and the power storage unit. The power adjustment unit receives the electrical energy provided by the photoelectric conversion cells having different absorption wavelengths, and transfers the electrical energy to the storage unit for storage after adjusting the electrical energy.

在本發明的一實施例中,上述的顯示裝置更包括多個絕緣層。多個絕緣層配置於遮蓋同一子畫素單元的不同光電轉換胞之間。 In an embodiment of the invention, the display device further includes a plurality of insulating layers. A plurality of insulating layers are disposed between different photoelectric conversion cells covering the same sub-pixel unit.

在本發明的一實施例中,上述的顯示裝置更包括配置於第二基板與光電轉換陣列之間的彩色濾光陣列。 In an embodiment of the invention, the display device further includes a color filter array disposed between the second substrate and the photoelectric conversion array.

在本發明的一實施例中,上述的每一光電轉換胞包括依序堆疊的第一電極、光電轉換結構以及第二電極。 In an embodiment of the invention, each of the photoelectric conversion cells includes a first electrode, a photoelectric conversion structure, and a second electrode that are sequentially stacked.

在本發明的一實施例中,上述的光電轉換結構包括吸收體與發射體。 In an embodiment of the invention, the photoelectric conversion structure includes an absorber and an emitter.

在本發明的一實施例中,上述遮蓋同一子畫素單元的不同光電轉換胞的吸收體具有不同吸收波長。 In an embodiment of the invention, the absorbers of the different photoelectric conversion cells covering the same sub-pixel unit have different absorption wavelengths.

在本發明的一實施例中,上述的吸收體的材料包括CuInSe、CuInGa(1-x)Se2、CuInGaSeS或上述至少二者的堆疊層,且x小於1。 In an embodiment of the invention, the material of the absorber includes CuInSe, CuInGa (1-x) Se 2 , CuInGaSeS or a stacked layer of at least two of the above, and x is less than 1.

在本發明的一實施例中,上述的發射體的材料包括硫化鎘、硫化鎘鋅、n型化合物半導體材料或其組合。 In an embodiment of the invention, the material of the emitter includes cadmium sulfide, cadmium zinc sulfide, n-type compound semiconductor material or a combination thereof.

基於上述,本發明一實施例的顯示裝置透過光電轉換陣列設置於畫素陣列上方來顯示彩色畫面。此外,更能夠將來自畫素陣列的光轉換為電能儲存,而提高能源利用效率。 Based on the above, the display device according to an embodiment of the present invention is disposed above the pixel array through the photoelectric conversion array to display a color picture. In addition, it is more capable of converting light from a pixel array into electrical energy storage, thereby improving energy efficiency.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

100、100A‧‧‧顯示裝置 100, 100A‧‧‧ display device

110‧‧‧第一基板 110‧‧‧First substrate

120‧‧‧第二基板 120‧‧‧second substrate

130‧‧‧畫素陣列 130‧‧‧ pixel array

132‧‧‧子畫素單元 132‧‧‧Subpixel unit

132a‧‧‧第一顯示電極 132a‧‧‧First display electrode

132b‧‧‧第三子畫素單元 132b‧‧‧ third sub-pixel unit

132c‧‧‧第二顯示電極 132c‧‧‧Second display electrode

132d‧‧‧顯示介質 132d‧‧‧Display media

132g‧‧‧第二子畫素單元 132g‧‧‧Second sub-pixel unit

132r‧‧‧第一子畫素單元 132r‧‧‧ first sub-pixel unit

140‧‧‧光電轉換陣列 140‧‧‧ photoelectric conversion array

142‧‧‧光電轉換胞 142‧‧‧Photoelectric conversion cell

142a‧‧‧第一電極 142a‧‧‧first electrode

142b‧‧‧第三光電轉換胞 142b‧‧‧ Third photoelectric conversion cell

142c‧‧‧光電轉換結構 142c‧‧‧ photoelectric conversion structure

142d‧‧‧吸收體 142d‧‧‧ absorber

142e‧‧‧發射體 142e‧‧‧ Emitter

142f‧‧‧第二電極 142f‧‧‧second electrode

142g‧‧‧第二光電轉換胞 142g‧‧‧second photoelectric conversion cell

142r‧‧‧第一光電轉換胞 142r‧‧‧first photoelectric conversion cell

150‧‧‧儲電單元 150‧‧‧Power storage unit

160‧‧‧驅動單元 160‧‧‧ drive unit

170‧‧‧電能調整單元 170‧‧‧Power adjustment unit

180‧‧‧絕緣層 180‧‧‧Insulation

190‧‧‧彩色濾光陣列 190‧‧‧Color filter array

192b‧‧‧第三濾光圖案 192b‧‧‧ third filter pattern

192g‧‧‧第二濾光圖案 192g‧‧‧second filter pattern

192r‧‧‧第一濾光圖案 192r‧‧‧first filter pattern

194‧‧‧遮光圖案 194‧‧‧ shading pattern

L‧‧‧初始光 L‧‧‧Initial light

lr、lg、lb‧‧‧顯示光 Lr, lg, lb‧‧‧ display light

D‧‧‧汲極 D‧‧‧汲

DU‧‧‧顯示單元 DU‧‧‧ display unit

G‧‧‧閘極 G‧‧‧ gate

I‧‧‧電能 I‧‧‧electric energy

T‧‧‧主動元件 T‧‧‧ active components

R1‧‧‧透光區 R1‧‧‧Light transmission area

R2‧‧‧遮光區 R2‧‧‧ shading area

S‧‧‧源極 S‧‧‧ source

SE‧‧‧通道 SE‧‧‧ channel

圖1為本發明一實施例之顯示裝置的剖面示意圖。 1 is a cross-sectional view of a display device in accordance with an embodiment of the present invention.

圖2為本發明一實施例之子畫素單元的剖面示意圖。 2 is a cross-sectional view showing a sub-pixel unit according to an embodiment of the present invention.

圖3為本發明一實施例之光電轉換胞的剖面示意圖。 3 is a schematic cross-sectional view showing a photoelectric conversion cell according to an embodiment of the present invention.

圖4為本發明一實施例的顯示裝置的部分畫素陣列、部分光電轉換陣列、電能調整單元、儲電單元以及驅動單元的示意圖。 4 is a schematic diagram of a partial pixel array, a partial photoelectric conversion array, a power adjustment unit, a power storage unit, and a driving unit of a display device according to an embodiment of the invention.

圖5為本發明另一實施例之顯示裝置的剖面示意圖。 FIG. 5 is a cross-sectional view of a display device according to another embodiment of the present invention.

圖1為本發明一實施例之顯示裝置的剖面示意圖。請參照圖1,顯示裝置100包括第一基板110、相對於第一基板110的第二基板120、配置於第一基板110與第二基板120之間的畫素陣列130以及配置於畫素陣列130與第二基板120之間的光電轉換陣列140。在本實施例中,第一基板110可為透光基板、遮光基板或其組合,而第二基板120可為透光基板或透光基板與遮光基板的組合。透光基板的材質例如為玻璃、石英、有機聚合物或其它適當材料。不透光基板的材質例如為導電材料、晶圓、陶瓷、或其它適當材料。 1 is a cross-sectional view of a display device in accordance with an embodiment of the present invention. Referring to FIG. 1 , the display device 100 includes a first substrate 110 , a second substrate 120 opposite to the first substrate 110 , a pixel array 130 disposed between the first substrate 110 and the second substrate 120 , and a pixel array disposed on the pixel array. A photoelectric conversion array 140 between the 130 and the second substrate 120. In this embodiment, the first substrate 110 may be a light-transmitting substrate, a light-shielding substrate, or a combination thereof, and the second substrate 120 may be a light-transmitting substrate or a combination of a light-transmitting substrate and a light-shielding substrate. The material of the light-transmitting substrate is, for example, glass, quartz, an organic polymer or other suitable material. The material of the opaque substrate is, for example, a conductive material, a wafer, a ceramic, or other suitable material.

畫素陣列130包括多個子畫素單元132。在本實施例中,子畫素單元132可選擇性地分為多個第一、二、三子畫素單元132r、132g、132b。與第一子畫素單元132r對應的區域用以提供具有第一顏色的顯示光lr。與第二子畫素單元132g對應的區域用以提供具有第二顏色的顯示光lg。與第三子畫素單元132b對應的區域用以提供具有第三顏色的顯示光lb。顯示光lr、lg、lb能夠混成白光。在本實施例中,顯示光lr、lg、lb的第一、二、三顏色例如為紅色、綠色與藍色。然而,本發明不以此為限,顯示光的顏色種類、子畫素單元種類的數量(即顯示光包括的顏色數量)均可視實際的需求做其他適當設計。舉例而言,在其他實施例中,為提升顯示裝置的色彩飽和度,顯示光可包括紅光、綠光、藍光與黃光,而子畫素單元的種類可分為對應紅光、綠光、藍光與黃 光的四種;為提升顯示裝置的亮度,顯示光可包括紅光、綠光、藍光與白光,而子畫素單元的種類可分為對應紅光、綠光、藍光與白光的四種,但本發明不以上述為限。 The pixel array 130 includes a plurality of sub-pixel units 132. In this embodiment, the sub-pixel unit 132 can be selectively divided into a plurality of first, second, and third sub-pixel units 132r, 132g, and 132b. An area corresponding to the first sub-pixel unit 132r is used to provide the display light lr having the first color. An area corresponding to the second sub-pixel unit 132g is used to provide the display light lg having the second color. The area corresponding to the third sub-pixel unit 132b is used to provide the display light lb having the third color. The display lights lr, lg, and lb can be mixed into white light. In the present embodiment, the first, second, and third colors of the display lights lr, lg, and lb are, for example, red, green, and blue. However, the present invention is not limited thereto, and the color type of the display light and the number of sub-pixel unit types (that is, the number of colors included in the display light) may be appropriately designed according to actual needs. For example, in other embodiments, in order to increase the color saturation of the display device, the display light may include red light, green light, blue light, and yellow light, and the types of sub-pixel units may be classified into corresponding red light and green light. , blue and yellow Four kinds of light; in order to increase the brightness of the display device, the display light may include red light, green light, blue light and white light, and the types of sub-pixel elements may be classified into four types corresponding to red light, green light, blue light and white light. However, the invention is not limited to the above.

圖2為本發明一實施例之子畫素單元的剖面示意圖。請參照圖2,在本實施例中,每一子畫素單元132包括主動元件T以及與主動元件T電性連接的顯示單元DU。主動元件T例如為具有源極S、閘極G、汲極D與通道SE的薄膜電晶體。圖2的主動元件T是以底部閘極型薄膜電晶體為示例,但本發明不限於此,在其他實施例中,主動元件T亦可為頂部閘極型、其他適當形式的薄膜電晶體或其他電子元件。顯示單元DU在本實施例中例如為有機發光二極體,且包括第一顯示電極132a、配置於第一顯示電極132a上的顯示介質132d以及顯示介質132d上的第二顯示電極132c。第一顯示電極132a與主動元件T的汲極D電性連接。第一顯示電極132a與第二顯示電極132c其中一者作為陽極而另一者作為陰極,以控制顯示介質132d的發光與否。顯示介質132d例如為可發出白色初始光L的白色有機發光層。第一顯示電極132a與第二顯示電極132c的材料可為任何的導電材料。不過,為了讓白色初始光L可穿透,第二顯示電極132c的材料可選擇為透光導電材料或透光導電材料與遮光導電材料的組合。舉例而言,透光導電材料例如為銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊。遮光導電材料例如為合金、金屬材料的氮化物、 金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層,但本發明不以此為限。 2 is a cross-sectional view showing a sub-pixel unit according to an embodiment of the present invention. Referring to FIG. 2, in the embodiment, each sub-pixel unit 132 includes an active component T and a display unit DU electrically connected to the active component T. The active device T is, for example, a thin film transistor having a source S, a gate G, a drain D and a channel SE. The active device T of FIG. 2 is exemplified by a bottom gate type thin film transistor, but the invention is not limited thereto. In other embodiments, the active device T may also be a top gate type, other suitable form of thin film transistor or Other electronic components. In this embodiment, the display unit DU is, for example, an organic light emitting diode, and includes a first display electrode 132a, a display medium 132d disposed on the first display electrode 132a, and a second display electrode 132c on the display medium 132d. The first display electrode 132a is electrically connected to the drain D of the active device T. One of the first display electrode 132a and the second display electrode 132c serves as an anode and the other serves as a cathode to control whether or not the display medium 132d emits light. The display medium 132d is, for example, a white organic light-emitting layer that emits white initial light L. The material of the first display electrode 132a and the second display electrode 132c may be any conductive material. However, in order to make the white initial light L transparent, the material of the second display electrode 132c may be selected as a light-transmitting conductive material or a combination of a light-transmitting conductive material and a light-shielding conductive material. For example, the light-transmitting conductive material is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide, or at least two of the above Stacking. The light-shielding conductive material is, for example, an alloy, a nitride of a metal material, An oxide of a metal material, an oxynitride of a metal material, or a stacked layer of a metal material and other conductive materials, but the invention is not limited thereto.

需說明的是,圖2及上述的子畫素單元的形式僅是用以說明本發明而非用以限制本發明。本發明的子畫素單元並不限於有機發光二極體子畫素單元,在其他實施例中,子畫素單元亦可為其他適當型式。舉例而言,在其他實施例中,配置於第一顯示電極132a上的顯示介質132d可為其他種類,例如液晶。如此,第一顯示電極132a與第二顯示電極132c可以分別為畫素電極與共用電極。在顯示介質夾於畫素電極與共用電極之間的設計下,子畫素單元可為扭轉向列(Twisted Nematic,TN)或垂直配向(Vertically Aligned,VA)模式的畫素單元。另外,在其他實施例中,以液晶作為顯示介質時,共用電極與畫素電極可以位於顯示介質的同一側。此時,子畫素單元可為共面切換(In-Plane Switching,IPS)型或邊緣電場切換(Fringe Field Switching,FFS)模式的子畫素單元。 It should be noted that the form of the sub-pixel unit of FIG. 2 and the above is only for explaining the present invention and is not intended to limit the present invention. The sub-pixel unit of the present invention is not limited to the organic light-emitting diode sub-pixel unit. In other embodiments, the sub-pixel unit may be other suitable patterns. For example, in other embodiments, the display medium 132d disposed on the first display electrode 132a may be of other kinds, such as liquid crystal. As such, the first display electrode 132a and the second display electrode 132c may be a pixel electrode and a common electrode, respectively. In the design of the display medium sandwiched between the pixel electrode and the common electrode, the sub-pixel unit may be a pixel unit of a twisted nematic (TN) or vertically aligned (VA) mode. In addition, in other embodiments, when liquid crystal is used as the display medium, the common electrode and the pixel electrode may be located on the same side of the display medium. In this case, the sub-pixel unit may be a sub-pixel unit of an In-Plane Switching (IPS) type or a Fringe Field Switching (FFS) mode.

請參照圖1,光電轉換陣列140包括多個光電轉換胞142。在本實施例中,多個光電轉換胞142可選擇性地分為多個第一、二、三光電轉換胞142r、142g、142b。第一光電轉換胞142r、第二光電轉換胞142g以及第三光電轉換胞142b分別具有不同的吸收波長。舉例而言,第一光電轉換胞142r用以吸收紅光,第二光電轉換胞142g用以吸收綠光,而第三光電轉換胞142b用以吸收藍光。每一第一子畫素單元132r被相重疊的一個第二光電轉換 胞142g以及一個第三光電轉換胞142b遮蓋且被多個第一光電轉換胞142r暴露。每一第二子畫素單元132g被相重疊的一個第一光電轉換胞142r以及一個第三光電轉換胞142b遮蓋且被多個第二光電轉換胞142g暴露。每一第三子畫素單元132b被相重疊的一個第一光電轉換胞142r以及一個第二光電轉換胞142g遮蓋且被多個第三光電轉換胞142b暴露。然而,本發明不限於此,光電轉換胞種類的數量、各類光電轉換胞的吸收波長以及各類光電轉換胞與各類子畫素單元之間的相對位置均可視實際的需求做其他適當設計。 Referring to FIG. 1, the photoelectric conversion array 140 includes a plurality of photoelectric conversion cells 142. In the present embodiment, the plurality of photoelectric conversion cells 142 are selectively divided into a plurality of first, second, and third photoelectric conversion cells 142r, 142g, and 142b. The first photoelectric conversion cell 142r, the second photoelectric conversion cell 142g, and the third photoelectric conversion cell 142b have different absorption wavelengths, respectively. For example, the first photoelectric conversion cell 142r is for absorbing red light, the second photoelectric conversion cell 142g is for absorbing green light, and the third photoelectric conversion cell 142b is for absorbing blue light. Each of the first sub-pixel units 132r is overlapped by a second photoelectric conversion The cell 142g and a third photoelectric conversion cell 142b are covered and exposed by the plurality of first photoelectric conversion cells 142r. Each of the second sub-pixel units 132g is covered by a first photoelectric conversion cell 142r and a third photoelectric conversion cell 142b which are overlapped and exposed by the plurality of second photoelectric conversion cells 142g. Each of the third sub-pixel units 132b is covered by a first photoelectric conversion cell 142r and a second photoelectric conversion cell 142g which are overlapped and exposed by the plurality of third photoelectric conversion cells 142b. However, the present invention is not limited thereto, the number of photoelectric conversion cell species, the absorption wavelength of various photoelectric conversion cells, and the relative positions between various types of photoelectric conversion cells and various sub-pixel units can be appropriately designed according to actual needs. .

圖3為本發明一實施例之光電轉換胞的剖面示意圖。請參照圖3,在本實施例中,每一光電轉換胞142包括第一電極142a、相對於第一電極142a的第二電極142f以及設置在第一、二電極142a、142f之間的光電轉換結構142c。來自子畫素單元的部份初始光L(繪於圖1)在通過第一電極142a、光電轉換結構142c以及第二電極142f後會轉換為電能。換言之,每一光電轉換胞可視為一個光伏電池結構。第一、二電極142a、142f可為透光導電層。透光導電層的材料例如為銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊,遮光導電材料合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層,但本發明不以此為限。 3 is a schematic cross-sectional view showing a photoelectric conversion cell according to an embodiment of the present invention. Referring to FIG. 3, in the embodiment, each of the photoelectric conversion cells 142 includes a first electrode 142a, a second electrode 142f with respect to the first electrode 142a, and photoelectric conversion disposed between the first and second electrodes 142a, 142f. Structure 142c. A portion of the initial light L (shown in FIG. 1) from the sub-pixel unit is converted into electrical energy after passing through the first electrode 142a, the photoelectric conversion structure 142c, and the second electrode 142f. In other words, each photoelectric conversion cell can be considered as a photovoltaic cell structure. The first and second electrodes 142a, 142f may be light transmissive conductive layers. The material of the light-transmitting conductive layer is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide, or a stack of at least two of the above, A light-shielding conductive material alloy, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or a stacked layer of a metal material and other conductive materials, but the invention is not limited thereto.

詳言之,光電轉換胞142的光電轉換結構142c可包括吸 收體142d以及設置在第二電極142f與吸收體142d之間的發射體142e,其中吸收體142c例如為具有特定能帶隙的半導體層。舉例而言,第一光電轉換胞142r的吸收體142d的能帶隙可介於1到1.2電子伏特,以吸收波長等於及大於620奈米的紅光及紅外光;第二光電轉換胞142g的吸收體142d的能帶隙可介於1.3到1.5電子伏特,以吸收波長介於500到620奈米的綠光;第三光電轉換胞142b的吸收體142d的能帶隙可介於1.6到1.8電子伏特,以吸收波長等於及小於500奈米的藍光、紫光及紫外光。 In detail, the photoelectric conversion structure 142c of the photoelectric conversion cell 142 may include a suction The body 142d and the emitter 142e disposed between the second electrode 142f and the absorber 142d, wherein the absorber 142c is, for example, a semiconductor layer having a specific energy band gap. For example, the energy band gap of the absorber 142d of the first photoelectric conversion cell 142r may be between 1 and 1.2 eV to absorb red and infrared light having a wavelength equal to or greater than 620 nm; the second photoelectric conversion cell 142g The energy band gap of the absorber 142d may be between 1.3 and 1.5 eV to absorb green light having a wavelength of 500 to 620 nm; the energy band gap of the absorber 142d of the third photoelectric conversion cell 142b may be between 1.6 and 1.8. Electron volts to absorb blue, violet, and ultraviolet light at wavelengths of 500 nm or less.

在本實施例中,吸收體142d的材料例如為CuInSe、CuInGa(1-x)Se2、CuInGaSeS或上述至少二者的堆疊層。若吸收體142d的材料包括CuInGa(1-x)Se2,其中x是介於0與1之間,透過適當地設計x值能夠使吸收體142d具有特定的能帶隙,以吸收特定波長範圍的光(例如:上述的紅光、綠光及藍光)。舉例而言,根據2002年國際半導體會議論文集中第一卷(Semiconductor Conference,2002.CAS 2002 Proceedings.International(Volume:1))第199至202頁的論文「Preparation of CIGS solar cell components by improved e-beam ablation technology and control of their final parameters」,當x=0、0.25或1.0時,CuInGa(1-x)Se2材料的能帶隙可分別為1.0、1.4或1.65電子伏特(eV)。因此,採用CuInGa(1-x)Se2材料製作吸收體142d時,可以藉由調整x值來獲得所要的能帶隙。然而,調整吸收體142d能帶隙的方式並不限於上述,在其他實施例中,亦可透過其他適當方式(例如:改變吸收體142d的載 子摻雜濃度、結晶程度等)調整吸收體142d的能帶隙。發射體142e的材料可為硫化鎘、硫化鎘鋅、n型化合物半導體材料或其他適當材料。n型化合物半導體材料例如但不限於n型Ⅱ-Ⅵ族化合物半導體。n型Ⅱ-Ⅵ族化合物半導體例如硒化鋅或硒化鎘,但本發明不以此為限。 In the present embodiment, the material of the absorber 142d is, for example, CuInSe, CuInGa (1-x) Se 2 , CuInGaSeS, or a stacked layer of at least two of the above. If the material of the absorber 142d includes CuInGa (1-x) Se 2 , where x is between 0 and 1, by appropriately designing the value of x, the absorber 142d can have a specific band gap to absorb a specific wavelength range. Light (for example: red, green and blue above). For example, according to the 2002 International Conference on Semiconductors Conference Papers (Semiconductor Conference, 2002. CAS 2002 Proceedings. International (Volume: 1)), pp. 199-202, "Preparation of CIGS solar cell components by improved e- The beam ablation technology and control of their final parameters", when x = 0, 0.25 or 1.0, the energy band gap of the CuInGa (1-x) Se 2 material may be 1.0, 1.4 or 1.65 electron volts (eV), respectively. Therefore, when the absorber 142d is made of a CuInGa (1-x) Se 2 material, the desired band gap can be obtained by adjusting the value of x. However, the manner in which the band gap of the absorber 142d can be adjusted is not limited to the above. In other embodiments, the absorber 142d may be adjusted by other suitable means (for example, changing the carrier doping concentration of the absorber 142d, the degree of crystallization, etc.). Band gap. The material of the emitter 142e may be cadmium sulfide, cadmium zinc sulfide, an n-type compound semiconductor material, or other suitable material. The n-type compound semiconductor material is, for example but not limited to, an n-type II-VI compound semiconductor. The n-type II-VI compound semiconductor such as zinc selenide or cadmium selenide, but the invention is not limited thereto.

需說明的是,上述雖以半導體光伏電池結構為例說明光電轉換胞的其中一種樣態,然而,本發明的光電轉換胞的型式並不限於半導體光伏電池結構。在其他實施例中,光電轉換胞亦可為其他適當形式的光伏電池結構,例如:染料敏化光伏電池結構、高分子摻混碳六十及其衍生物的光伏電池結構、高分子摻混無機奈米粒子的光伏電池結構、有機摻混材料的光伏電池結構等。 It should be noted that although the semiconductor photovoltaic cell structure is taken as an example to describe one of the photoelectric conversion cells, the type of the photoelectric conversion cell of the present invention is not limited to the semiconductor photovoltaic cell structure. In other embodiments, the photoelectric conversion cell may also be other suitable forms of photovoltaic cell structures, such as a dye-sensitized photovoltaic cell structure, a photovoltaic cell structure of a polymer blended carbon sixty and its derivatives, and a polymer blended inorganic. Photovoltaic cell structure of nano particles, photovoltaic cell structure of organic blending materials, and the like.

圖4為本發明一實施例的顯示裝置的部分畫素陣列、部分光電轉換陣列、電能調整單元、儲電單元以及驅動單元的示意圖。請參照圖1及圖4,來自每一子畫素單元的初始光L經過光電轉換陣列140後會轉換成電能I以及顯示光lr、lg、lb。每一光電轉換胞142的面積遮蓋兩個相鄰的子畫素單元132並部分重疊另一個光電轉換胞142的面積,且遮蓋同一個子畫素單元132的不同光電轉換胞142具有不同的吸收波長。藉此,當初始光L穿過同一子畫素單元132上方的不同光電轉換胞142時,部份的初始光L會被相堆疊的不同光電轉換胞142吸收,進而使顯示光lr、lg、lb呈現特定顏色。此外,相鄰兩個子畫素單元132呈現的顯示光lr、lg更具有不同波長(即不同的顏色)。如此一來,來自所 有子畫素單元132的顯示光lr、lg、lb便能夠組成彩色的顯示畫面。 4 is a schematic diagram of a partial pixel array, a partial photoelectric conversion array, a power adjustment unit, a power storage unit, and a driving unit of a display device according to an embodiment of the invention. Referring to FIG. 1 and FIG. 4, the initial light L from each sub-pixel unit passes through the photoelectric conversion array 140 and is converted into electric energy I and display light lr, lg, lb. The area of each of the photoelectric conversion cells 142 covers two adjacent sub-pixel units 132 and partially overlaps the area of the other photoelectric conversion cells 142, and the different photoelectric conversion cells 142 covering the same sub-pixel unit 132 have different absorptions. wavelength. Thereby, when the initial light L passes through the different photoelectric conversion cells 142 above the same sub-pixel unit 132, part of the initial light L is absorbed by the different photoelectric conversion cells 142 of the phase stack, thereby causing the display light lr, lg, Lb presents a specific color. In addition, the display lights lr, lg presented by the adjacent two sub-pixel units 132 have different wavelengths (ie, different colors). So come from The display lights lr, lg, and lb of the sub-pixel unit 132 can constitute a color display screen.

舉例而言,來自每一第一子畫素單元132r的初始光L(例如:白光)被相重疊的一個第二光電轉換胞142g以及一個第三光電轉換胞142b部分吸收並穿出第二基板120後會形成具有第一顏色(例如:紅色)的顯示光lr。來自每一第二子畫素單元132g的初始光L被相重疊的一個第一光電轉換胞142r與一個第三光電轉換胞142b部分吸收並穿出第二基板120後,會形成具有第二顏色(例如:綠色)的顯示光lg。來自每一第三子畫素單元132b的初始光L被相重疊的一個第一光電轉換胞142r與一個第二光電轉換胞142g部分吸收並穿出第二基板120後,會形成具有第三顏色(例如:綠色)的顯示光lg。來自第一、二、三子畫素單元132r、132g、132b的顯示光lr、lg、lb能夠組成一個具有特定色彩的顯示畫面。 For example, the initial light L (for example, white light) from each of the first sub-pixel units 132r is partially absorbed by a second photoelectric conversion cell 142g and a third photoelectric conversion cell 142b that overlap each other and passes through the second substrate. After 120, a display light lr having a first color (for example, red) is formed. The initial light L from each of the second sub-pixel units 132g is partially absorbed by a first photoelectric conversion cell 142r and a third photoelectric conversion cell 142b, and is passed through the second substrate 120 to form a second color. (for example: green) display light lg. The initial light L from each of the third sub-pixel units 132b is partially absorbed by a first photoelectric conversion cell 142r and a second photoelectric conversion cell 142g which are overlapped and passed through the second substrate 120 to form a third color. (for example: green) display light lg. The display lights lr, lg, and lb from the first, second, and third sub-pixel units 132r, 132g, and 132b can constitute a display screen having a specific color.

請參照圖1及圖4,在本實施例中,每一第一光電轉換胞142r重疊於其中一個第二光電轉換胞142g以及其中一個第三光電轉換胞142b而定義出一個遮光區R2。相鄰兩個第一光電轉換胞142r之間的區域、相鄰兩個第二光電轉換胞142g之間的區域與相鄰兩個第三光電轉換胞142b之間的區域分別定義出一個透光區R1。每一透光區R1與其中一個子畫素單元132的第一顯示電極132a(繪示於圖2)重疊。每一遮光區R2與其中一個子畫素單元132的主動元件T(繪示於圖2)以及其他遮光構件(例如:與主動元件T的源極S電性連接的資料線等)重疊。在每一第一子畫素單元132r的透光區R1上相重疊的第二光電轉換胞142g與第三 光電轉換胞142b更延伸至第一子畫素單元132r的遮光區R2上,以和遮蓋第三子畫素單元132b的第一光電轉換胞142r重疊而共同阻擋來自畫素陣列130的初始光L。在每一第二子畫素單元132g的透光區R1上相重疊的第一光電轉換胞142r與第三光電轉換胞142b更延伸至第二子畫素單元132g的遮光區R2上,以和遮蓋第一子畫素單元132r的第二光電轉換胞142g重疊而共同阻擋來自畫素陣列130的初始光L。在每一第三子畫素單元132b的透光區R1上相重疊的第一光電轉換胞142r與第二光電轉換胞142g更延伸至第三子畫素單元132b的遮光區R2上,以和遮蓋第二子畫素單元132g的第三光電轉換胞142b重疊而共同阻擋來自畫素陣列130的初始光L。換言之,在每一遮光區R2上互相堆疊的部份第一光電轉換胞142r、部份第二光電轉換胞142g以及部份第三光電轉換胞142b可做為遮光層使用,以避免來自每一子畫素單元132的初始光L傳遞至相鄰子畫素單元132正上方的光電轉換胞142,進而降低顯示裝置100發生顯示色彩異常的機率及/或程度。 Referring to FIG. 1 and FIG. 4, in the embodiment, each of the first photoelectric conversion cells 142r is overlapped with one of the second photoelectric conversion cells 142g and one of the third photoelectric conversion cells 142b to define a light shielding region R2. A region between the adjacent two first photoelectric conversion cells 142r, a region between the adjacent two second photoelectric conversion cells 142g, and a region between the adjacent two third photoelectric conversion cells 142b define a light transmission, respectively. District R1. Each of the light transmissive regions R1 overlaps with the first display electrode 132a (shown in FIG. 2) of one of the sub-pixel units 132. Each of the light shielding regions R2 overlaps with an active device T (shown in FIG. 2) of one of the sub-pixel units 132 and other light blocking members (for example, a data line electrically connected to the source S of the active device T, etc.). a second photoelectric conversion cell 142g and a third layer overlapping each other on the light transmissive region R1 of the first sub-pixel unit 132r The photoelectric conversion cell 142b extends further to the light-shielding region R2 of the first sub-pixel unit 132r to overlap the first photoelectric conversion cell 142r covering the third sub-pixel unit 132b to collectively block the initial light L from the pixel array 130. . The first photoelectric conversion cells 142r and the third photoelectric conversion cells 142b overlapping each other on the light-transmitting region R1 of each of the second sub-pixel units 132g extend to the light-shielding region R2 of the second sub-pixel unit 132g to The second photoelectric conversion cells 142g covering the first sub-pixel unit 132r overlap to collectively block the initial light L from the pixel array 130. The first photoelectric conversion cells 142r and the second photoelectric conversion cells 142g overlapping each other on the light transmissive region R1 of each of the third sub-pixel units 132b extend to the light-shielding region R2 of the third sub-pixel unit 132b to The third photoelectric conversion cells 142b covering the second sub-pixel unit 132g overlap to collectively block the initial light L from the pixel array 130. In other words, a portion of the first photoelectric conversion cells 142r, a portion of the second photoelectric conversion cells 142g, and a portion of the third photoelectric conversion cells 142b stacked on each of the light shielding regions R2 can be used as a light shielding layer to avoid The initial light L of the sub-pixel unit 132 is transmitted to the photoelectric conversion cells 142 directly above the adjacent sub-pixel units 132, thereby reducing the probability and/or extent of display color abnormality of the display device 100.

在本實施例中,第一光電轉換胞142r相較於第二光電轉換胞142g與第三光電轉換胞142b接近畫素陣列130,且第一光電轉換胞142r的吸收波長大於第二、三光電轉換胞142g、142b的吸收波長。換言之,若子畫素單元132正上方設置的多個光電轉換胞142包括第一光電轉換胞142r,則初始光L會先通過吸收波長最長的第一光電轉換胞142r。初始光L中波長越長的部分其穿透能力越差,因此若將吸收波長最長的第一光電轉換胞142r設置 於初始光L傳遞路徑的最前端,則初始光L中穿透能力差的部分可先被吸收運用,而不會被其他吸收波長的光電轉換胞142損耗。藉此,光電轉換陣列140便能夠更有效率地將初始光L轉換成電能I,以供顯示裝置100本身或外部裝置使用。 In this embodiment, the first photoelectric conversion cell 142r is closer to the pixel array 130 than the second photoelectric conversion cell 142g and the third photoelectric conversion cell 142b, and the absorption wavelength of the first photoelectric conversion cell 142r is greater than that of the second and third photoelectric groups. The absorption wavelengths of the cells 142g, 142b are converted. In other words, if the plurality of photoelectric conversion cells 142 disposed directly above the sub-pixel unit 132 include the first photoelectric conversion cells 142r, the initial light L first passes through the first photoelectric conversion cells 142r having the longest absorption wavelength. The longer the wavelength in the initial light L, the worse the penetration ability, so if the first photoelectric conversion cell 142r having the longest absorption wavelength is set At the forefront of the initial light L transmission path, the portion of the initial light L having poor penetrability can be absorbed and used without being lost by the other wavelength-converting photoelectric conversion cells 142. Thereby, the photoelectric conversion array 140 can more efficiently convert the initial light L into the electric energy I for use by the display device 100 itself or an external device.

請參照圖1及圖4,顯示裝置100可選擇性地包括電性連接於光電轉換陣列140與畫素陣列130之間的儲電單元150(繪示於圖4)。儲電單元150儲存光電轉換陣列140轉換出的電能I。在本實施例中,顯示裝置100可進一步包括電性連接於儲電單元150與子畫素陣列130之間的驅動單元160。驅動單元160運用電能I驅動子畫素單元。換言之,透過特殊設計的光電轉換陣列140不但可使顯示裝置100顯示彩色畫面,更可將為了實現不同色彩而損耗的部分初始光L轉換為電能I儲存。在本實施例中,電能I更可選擇性地傳遞至驅動單元160,而使驅動單元160能夠運用電能I驅動子畫素單元132,進而使顯示裝置100更為節能省電,即,減少外部電能的需求量。 Referring to FIG. 1 and FIG. 4 , the display device 100 can optionally include a power storage unit 150 (shown in FIG. 4 ) electrically connected between the photoelectric conversion array 140 and the pixel array 130 . The power storage unit 150 stores the electric energy I converted by the photoelectric conversion array 140. In the embodiment, the display device 100 may further include a driving unit 160 electrically connected between the power storage unit 150 and the sub-pixel array 130. The driving unit 160 uses the electric energy I to drive the sub-pixel unit. In other words, through the specially designed photoelectric conversion array 140, not only the display device 100 can display a color picture, but also a portion of the initial light L lost for realizing different colors can be converted into the electric energy I. In this embodiment, the electric energy I is more selectively transmitted to the driving unit 160, so that the driving unit 160 can use the electric energy I to drive the sub-pixel unit 132, thereby making the display device 100 more energy-saving, that is, reducing the external The amount of electricity required.

在本實施例中,顯示裝置100可選擇性地包括絕緣層180。絕緣層180配置於遮蓋同一個子畫素單元的不同光電轉換胞之間。舉例而言,遮蓋同一第一子畫素單元132r的第二、三光電轉換胞142g、142b之間設有絕緣層180,遮蓋同一第二子畫素單元132g的第一、三光電轉換胞142r、142b之間設有絕緣層180,而遮蓋同一第三子畫素單元132b的第一、二光電轉換胞142r、142g之間設有絕緣層180。絕緣層180的材料可為無機材料(例如:氧 化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層)、有機材料或上述之組合。值得一提的是,透過絕緣層180的設置,具有不同吸收波長的光電轉換胞(例如:第一、二、三光電轉換胞142r、142g、142b)轉換出的不同電能I(例如:不同大小的電流)能夠分別地傳送到電性連接於光電轉換胞142與儲電單元150之間的電能調整單元170。當不同電能I分別傳送時,電能I能夠更有效率地被電能調整單元170接收。電能調整單元170接收不同電能I後,能夠調整各電能I而更有效率地將電能I儲存至儲電單元150。 In the present embodiment, the display device 100 may optionally include an insulating layer 180. The insulating layer 180 is disposed between different photoelectric conversion cells covering the same sub-pixel unit. For example, an insulating layer 180 is disposed between the second and third photoelectric conversion cells 142g and 142b covering the same first sub-pixel unit 132r, and the first and third photoelectric conversion cells 142r of the same second sub-pixel unit 132g are covered. An insulating layer 180 is disposed between 142b, and an insulating layer 180 is disposed between the first and second photoelectric conversion cells 142r and 142g covering the same third sub-pixel unit 132b. The material of the insulating layer 180 may be an inorganic material (for example: oxygen A ruthenium oxide, a tantalum nitride, a ruthenium oxynitride, or a stacked layer of at least two materials described above, an organic material, or a combination thereof. It is worth mentioning that, through the arrangement of the insulating layer 180, the photoelectric conversion cells having different absorption wavelengths (for example, the first, second, and third photoelectric conversion cells 142r, 142g, and 142b) convert different electrical energy I (for example, different sizes). The current can be separately transmitted to the power adjustment unit 170 electrically connected between the photoelectric conversion cell 142 and the power storage unit 150. When different electrical energy I are transmitted separately, the electrical energy I can be received by the electrical energy adjustment unit 170 more efficiently. After receiving the different electric energy I, the electric energy adjusting unit 170 can adjust each electric energy I to store the electric energy I to the electric storage unit 150 more efficiently.

圖5為本發明另一實施例之顯示裝置的剖面示意圖。圖5的顯示裝置100A與圖1的顯示裝置100相似,因此相同或相對應元件以相同或相對應的標號表示。顯示裝置100A與顯示裝置100的差異主要在於:顯示裝置100A更包括彩色濾光陣列190。以下主要就此差異做說明,二者相同處請依圖5中的標號參照前述說明,於此便不再重述。 FIG. 5 is a cross-sectional view of a display device according to another embodiment of the present invention. The display device 100A of FIG. 5 is similar to the display device 100 of FIG. 1, and thus the same or corresponding elements are denoted by the same or corresponding reference numerals. The difference between the display device 100A and the display device 100 is mainly that the display device 100A further includes a color filter array 190. The following mainly explains the difference. If the two are the same, please refer to the above description according to the reference numerals in FIG. 5, and the description will not be repeated here.

請參照圖5,顯示裝置100A包括第一基板110、相對於第一基板110的第二基板120、配置於第一基板110與第二基板120之間的畫素陣列130以及配置於畫素陣列130與第二基板120之間的光電轉換陣列140。畫素陣列130包括多個子畫素單元132。來自每一子畫素單元的初始光L經過光電轉換陣列140轉換成電能與顯示光l。電能被儲存而顯示光l會穿出第二基板120以顯示畫面。相鄰兩個子畫素單元132呈現的顯示光l具有不同波 長。光電轉換陣列140包括多個光電轉換胞142。每一光電轉換胞142的面積遮蓋兩個相鄰的子畫素單元132並部分重疊另一個光電轉換胞142的面積。遮蓋同一個子畫素單元132的不同光電轉換胞142具有不同的吸收波長。在本實施例中,顯示裝置100A可選擇性地如顯示裝置100般包括圖4的儲電單元150、驅動單元160以及電能調整單元170,關於儲電單元150、驅動單元160以及電能調整單元170與顯示裝置100A其他構件之間的關係,請參照前述說明,於此便不再重述。 Referring to FIG. 5, the display device 100A includes a first substrate 110, a second substrate 120 opposite to the first substrate 110, a pixel array 130 disposed between the first substrate 110 and the second substrate 120, and a pixel array disposed on the pixel array. A photoelectric conversion array 140 between the 130 and the second substrate 120. The pixel array 130 includes a plurality of sub-pixel units 132. The initial light L from each sub-pixel unit is converted into electrical energy and display light 1 by the photoelectric conversion array 140. The electrical energy is stored and the display light l will pass out of the second substrate 120 to display a picture. The display light l presented by two adjacent sub-pixel units 132 has different waves long. The photoelectric conversion array 140 includes a plurality of photoelectric conversion cells 142. The area of each of the photoelectric conversion cells 142 covers two adjacent sub-pixel units 132 and partially overlaps the area of the other photoelectric conversion cells 142. The different photoelectric conversion cells 142 that cover the same sub-pixel unit 132 have different absorption wavelengths. In the present embodiment, the display device 100A can selectively include the power storage unit 150, the driving unit 160, and the power adjusting unit 170 of FIG. 4 as the display device 100, with respect to the power storage unit 150, the driving unit 160, and the power adjusting unit 170. For the relationship between the other components of the display device 100A, please refer to the above description, and the description will not be repeated here.

顯示裝置100A與顯示裝置100不同的是,顯示裝置100A更包括彩色濾光陣列190。彩色濾光陣列190位於於第二基板120與光電轉換胞之間。彩色濾光陣列190具有多個第一、二、三濾光圖案192r、192g、192b及遮光圖案194。第一、二、三濾光圖案192r、192g、192b分別對應於第一、二、三子畫素單元132r、132g、132b並遮蓋透光區R1,而遮光圖案194則遮蓋遮光區R2。第一濾光圖案192r能進一步地濾除未被第二、三光電轉換胞142g、142b濾除的部分初始光L,進而使穿出第二基板120的顯示光lr具有更窄的頻寬,藉以呈現更飽和的色彩。第二濾光圖案192g能進一步地濾除未被第一、三光電轉換胞142r、142b濾除的部分初始光L,進而使穿出第二基板120的顯示光lg具有更窄的頻寬,藉以呈現更飽和的色彩。第三濾光圖案192b能進一步地濾除未被第一、二光電轉換胞142r、142g濾除的部分初始光L,進而使穿出第二基板120的顯示光lb具有更窄的頻寬,藉以呈現更 飽和的色彩。藉此,顯示裝置100A的色彩飽和度能夠進一步地提高。遮光圖案194則可阻擋遮光區R2中未被第一、二、三光電轉換胞142r、142g、142b吸收的初始光L,進而使顯示裝置100A具有更高的對比度。 The display device 100A differs from the display device 100 in that the display device 100A further includes a color filter array 190. The color filter array 190 is located between the second substrate 120 and the photoelectric conversion cells. The color filter array 190 has a plurality of first, second, and third filter patterns 192r, 192g, and 192b and a light blocking pattern 194. The first, second, and third filter patterns 192r, 192g, and 192b respectively correspond to the first, second, and third sub-pixel units 132r, 132g, and 132b and cover the light-transmitting region R1, and the light-shielding pattern 194 covers the light-shielding region R2. The first filter pattern 192r can further filter out part of the initial light L that is not filtered by the second and third photoelectric conversion cells 142g, 142b, so that the display light lr that passes through the second substrate 120 has a narrower bandwidth. To present a more saturated color. The second filter pattern 192g can further filter out part of the initial light L that is not filtered by the first and third photoelectric conversion cells 142r, 142b, thereby making the display light lg that passes through the second substrate 120 have a narrower bandwidth. To present a more saturated color. The third filter pattern 192b can further filter out part of the initial light L that is not filtered by the first and second photoelectric conversion cells 142r and 142g, thereby making the display light lb passing through the second substrate 120 have a narrower bandwidth. To present more Saturated colors. Thereby, the color saturation of the display device 100A can be further improved. The light-shielding pattern 194 blocks the initial light L of the light-shielding region R2 that is not absorbed by the first, second, and third photoelectric conversion cells 142r, 142g, and 142b, thereby causing the display device 100A to have a higher contrast ratio.

第一、二、三濾光圖案192r、192g、192b的顏色可視第一、二、三子畫素單元132r、132g、132b所在處所欲顯示的顏色而定。在本實施例中,第一、二、三濾光圖案192、194、196例如為紅色、綠色、藍色濾光圖案,以對應於第一、二、三子畫素單元132r、132g、132b所呈現的顯示光lr、lg、lb,但本發明不以此為限。 The colors of the first, second, and third filter patterns 192r, 192g, and 192b may depend on the color of the first, second, and third sub-pixel units 132r, 132g, and 132b to be displayed. In this embodiment, the first, second, and third filter patterns 192, 194, and 196 are, for example, red, green, and blue filter patterns to correspond to the first, second, and third sub-pixel units 132r, 132g, and 132b. The display light lr, lg, lb is presented, but the invention is not limited thereto.

綜上所述,本發明實施例的顯示裝置透過光電轉換陣列實現彩色畫面的顯示。更進一步地說,光電轉換陣列的製程成熟而其製程能力要求較習知技術的各色光有機發光單元低,因此光電轉換陣列的每一光電轉換胞易精準地製作於設定位置,以實現高解析度的設計。 In summary, the display device of the embodiment of the present invention realizes display of a color picture through a photoelectric conversion array. Furthermore, the process of the photoelectric conversion array is mature and the process capability is lower than that of the light-emitting organic light-emitting units of the prior art. Therefore, each photoelectric conversion cell of the photoelectric conversion array can be accurately fabricated at a set position to achieve high resolution. Degree of design.

此外,本發明實施例的顯示裝置透過光電轉換陣列更能夠將為了實現色彩而吸收損耗的光轉換為電能,以供儲存與利用。因此,本發明實施例的顯示裝置可以節省外部能源的需求並同時實現彩色畫面的顯示。 In addition, the display device of the embodiment of the present invention can further convert light that absorbs loss for realizing color into electrical energy through the photoelectric conversion array for storage and utilization. Therefore, the display device of the embodiment of the present invention can save the demand for external energy and simultaneously realize the display of a color picture.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of protection of the present invention This is subject to the definition of the scope of the patent application.

100‧‧‧顯示裝置 100‧‧‧ display device

110‧‧‧第一基板 110‧‧‧First substrate

120‧‧‧第二基板 120‧‧‧second substrate

130‧‧‧畫素陣列 130‧‧‧ pixel array

132‧‧‧子畫素單元 132‧‧‧Subpixel unit

132b‧‧‧第三子畫素單元 132b‧‧‧ third sub-pixel unit

132g‧‧‧第二子畫素單元 132g‧‧‧Second sub-pixel unit

132r‧‧‧第一子畫素單元 132r‧‧‧ first sub-pixel unit

140‧‧‧光電轉換陣列 140‧‧‧ photoelectric conversion array

142‧‧‧光電轉換胞 142‧‧‧Photoelectric conversion cell

142b‧‧‧第三光電轉換胞 142b‧‧‧ Third photoelectric conversion cell

142g‧‧‧第二光電轉換胞 142g‧‧‧second photoelectric conversion cell

142r‧‧‧第一光電轉換胞 142r‧‧‧first photoelectric conversion cell

180‧‧‧絕緣層 180‧‧‧Insulation

L‧‧‧初始光 L‧‧‧Initial light

lr、lg、lb‧‧‧顯示光 Lr, lg, lb‧‧‧ display light

R1‧‧‧透光區 R1‧‧‧Light transmission area

R2‧‧‧遮光區 R2‧‧‧ shading area

Claims (18)

一種顯示裝置,包括:一第一基板;一第二基板,相對於該第一基板;一畫素陣列,配置於該第一基板與該第二基板之間,該畫素陣列包括多個子畫素單元;以及一光電轉換陣列,配置於該畫素陣列與該第二基板之間,來自每一該子畫素單元的一初始光經過該光電轉換陣列轉換成一電能以及一顯示光,該電能被儲存而該顯示光穿出該第二基板以顯示畫面,且相鄰兩個子畫素單元呈現的該顯示光具有不同波長,其中該光電轉換陣列包括多個光電轉換胞,每一該光電轉換胞的面積遮蓋兩個相鄰的子畫素單元並部分重疊另一個光電轉換胞的面積,而遮蓋同一個子畫素單元的不同光電轉換胞具有不同的吸收波長。 A display device includes: a first substrate; a second substrate opposite to the first substrate; a pixel array disposed between the first substrate and the second substrate, the pixel array comprising a plurality of sub-pictures And a photoelectric conversion array disposed between the pixel array and the second substrate, an initial light from each of the sub-pixel units is converted into an electric energy and a display light by the photoelectric conversion array, the electric energy Stored and the display light passes through the second substrate to display a picture, and the display light presented by two adjacent sub-pixel units has different wavelengths, wherein the photoelectric conversion array includes a plurality of photoelectric conversion cells, each of the photoelectric The area of the switching cell covers two adjacent sub-pixel units and partially overlaps the area of the other photoelectric conversion cell, while the different photoelectric conversion cells covering the same sub-pixel unit have different absorption wavelengths. 如申請專利範圍第1項所述的顯示裝置,其中該些子畫素單元包括多個第一子畫素單元、多個第二子畫素單元與多個第三子畫素單元,該些光電轉換胞包括多個第一光電轉換胞、多個第二光電轉換胞與多個第三光電轉換胞,每一該第一光電轉換胞、每一該第二光電轉換胞以及每一該第三光電轉換胞分別具有不同的吸收波長;每一該第一子畫素單元被相重疊的其中一個第二光電轉換胞以及其中一個第三光電轉換胞遮蓋且被該些第一光電轉換胞暴露,使得來自每一該第一子畫素單元的該初始光所轉換成 的該顯示光具有一第一顏色;每一該第二子畫素單元被相重疊的其中一個第一光電轉換胞以及其中一個第三光電轉換胞遮蓋且被該些第二光電轉換胞暴露,使得自每一該第二子畫素單元的該初始光所轉換成的該顯示光具有一第二顏色;每一該第三子畫素單元被相重疊的其中一個第一光電轉換胞以及其中一個第二光電轉換胞遮蓋且被該些第三光電轉換胞暴露,使得自每一該第三子畫素單元的該初始光所轉換成的該顯示光具有一第三顏色。 The display device of claim 1, wherein the sub-pixel units comprise a plurality of first sub-pixel units, a plurality of second sub-pixel units, and a plurality of third sub-pixel units, The photoelectric conversion cell includes a plurality of first photoelectric conversion cells, a plurality of second photoelectric conversion cells, and a plurality of third photoelectric conversion cells, each of the first photoelectric conversion cells, each of the second photoelectric conversion cells, and each of the first The three photoelectric conversion cells respectively have different absorption wavelengths; each of the first sub-pixel units is covered by one of the second photoelectric conversion cells and one of the third photoelectric conversion cells and exposed by the first photoelectric conversion cells Converting the initial light from each of the first sub-pixel elements into The display light has a first color; each of the second sub-pixel units is covered by one of the first photoelectric conversion cells and one of the third photoelectric conversion cells, and is exposed by the second photoelectric conversion cells. And causing the display light converted from the initial light of each of the second sub-pixel units to have a second color; each of the first sub-pixel units being overlapped by one of the first photoelectric conversion cells and A second photoelectric conversion cell is covered and exposed by the third photoelectric conversion cells such that the display light converted from the initial light of each of the third sub-pixel units has a third color. 如申請專利範圍第2項所述的顯示裝置,其中每一該第一光電轉換胞的吸收波長範圍大於620奈米。 The display device of claim 2, wherein each of the first photoelectric conversion cells has an absorption wavelength range greater than 620 nm. 如申請專利範圍第2項所述的顯示裝置,其中每一該第二光電轉換胞的吸收波長範圍為500奈米到620奈米。 The display device of claim 2, wherein each of the second photoelectric conversion cells has an absorption wavelength ranging from 500 nm to 620 nm. 如申請專利範圍第2項所述的顯示裝置,其中每一該第三光電轉換胞的吸收波長範圍等於或小於500奈米。 The display device according to claim 2, wherein each of the third photoelectric conversion cells has an absorption wavelength range of 500 nm or less. 如申請專利範圍第2項所述的顯示裝置,其中該些第一光電轉換胞相較於該些第二光電轉換胞與該些第三光電轉換胞接近該畫素陣列,且該些第一光電轉換胞的吸收波長相較於該些第二光電轉換胞與該些第三光電轉換胞的吸收波長更長。 The display device of claim 2, wherein the first photoelectric conversion cells are closer to the pixel array than the second photoelectric conversion cells and the third photoelectric conversion cells, and the first The absorption wavelength of the photoelectric conversion cell is longer than the absorption wavelengths of the second photoelectric conversion cells and the third photoelectric conversion cells. 如申請專利範圍第2項所述的顯示裝置,其中每一該第一光電轉換胞重疊於其中一個第二光電轉換胞以及其中一個第三光電轉換胞而定義出一遮光區,相鄰兩個第一光電轉換胞之間的區域、相鄰兩個第二光電轉換胞之間的區域與相鄰兩個第三光電轉換胞之間的區域分別定義出一透光區。 The display device of claim 2, wherein each of the first photoelectric conversion cells overlaps one of the second photoelectric conversion cells and one of the third photoelectric conversion cells to define a light shielding region, adjacent to two A region between the first photoelectric conversion cells, a region between the adjacent two second photoelectric conversion cells, and a region between the adjacent two third photoelectric conversion cells respectively define a light transmission region. 如申請專利範圍第1項所述的顯示裝置,其中每一該子畫素單元包括一主動元件以及與該主動元件電性連接的一顯示單元。 The display device of claim 1, wherein each of the sub-pixel units comprises an active component and a display unit electrically connected to the active component. 如申請專利範圍第1項所述的顯示裝置,其中該顯示單元為一有機發光二極體。 The display device of claim 1, wherein the display unit is an organic light emitting diode. 如申請專利範圍第1項所述的顯示裝置,更包括:一儲電單元,電性連接於該些光電轉換胞以儲存該電能;以及一驅動單元,電性連接於該儲電單元與該畫素陣列之間,該驅動單元運用該電能而驅動該些子畫素單元。 The display device of claim 1, further comprising: a storage unit electrically connected to the photoelectric conversion cells to store the electrical energy; and a driving unit electrically connected to the storage unit and the Between the pixel arrays, the driving unit uses the electrical energy to drive the sub-pixel units. 如申請專利範圍第10項所述的顯示裝置,更包括一電能調整單元,電性連接於該些光電轉換胞與該儲電單元之間,該電能調整單元接收具有不同吸收波長的該些光電轉換胞所提供的該電能,並在調整該電能後將該電能傳遞至該儲電單元儲存。 The display device of claim 10, further comprising a power adjustment unit electrically connected between the photoelectric conversion cells and the power storage unit, the power adjustment unit receiving the photoelectric signals having different absorption wavelengths The electric energy provided by the cell is converted, and after the electric energy is adjusted, the electric energy is transferred to the electric storage unit for storage. 如申請專利範圍第1項所述的顯示裝置,更包括多個絕緣層,配置於遮蓋同一該子畫素單元的不同光電轉換胞之間。 The display device according to claim 1, further comprising a plurality of insulating layers disposed between different photoelectric conversion cells covering the same sub-pixel unit. 如申請專利範圍第1項所述的顯示裝置,更包括一彩色濾光陣列,配置於該第二基板與該光電轉換陣列之間。 The display device of claim 1, further comprising a color filter array disposed between the second substrate and the photoelectric conversion array. 如申請專利範圍第1項所述的顯示裝置,其中每一該光電轉換胞包括依序堆疊的一第一電極、一光電轉換結構以及一第二電極。 The display device of claim 1, wherein each of the photoelectric conversion cells comprises a first electrode, a photoelectric conversion structure and a second electrode stacked in sequence. 如申請專利範圍第14項所述的顯示裝置,其中該光電轉 換結構包括一吸收體與一發射體。 The display device of claim 14, wherein the photoelectric conversion The changing structure includes an absorber and an emitter. 如申請專利範圍第15項所述的顯示裝置,其中遮蓋同一該子畫素單元的不同光電轉換胞的吸收體具有不同吸收波長。 The display device of claim 15, wherein the absorbers covering different photoelectric conversion cells of the same sub-pixel unit have different absorption wavelengths. 如申請專利範圍第15項所述的顯示裝置,其中該吸收體的材料包括CuInSe、CuInGa(1-x)Se2、CuInGaSeS或上述至少二者的堆疊層,且x小於1。 The display device according to claim 15, wherein the material of the absorber comprises CuInSe, CuInGa (1-x )Se 2 , CuInGaSeS or a stacked layer of at least two of the above, and x is less than 1. 如申請專利範圍第15項所述的顯示裝置,其中該發射體的材料包括硫化鎘、硫化鎘鋅、n型化合物半導體材料或其組合。 The display device of claim 15, wherein the material of the emitter comprises cadmium sulfide, cadmium zinc sulfide, an n-type compound semiconductor material, or a combination thereof.
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