TW201634724A - Target material - Google Patents

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TW201634724A
TW201634724A TW105106598A TW105106598A TW201634724A TW 201634724 A TW201634724 A TW 201634724A TW 105106598 A TW105106598 A TW 105106598A TW 105106598 A TW105106598 A TW 105106598A TW 201634724 A TW201634724 A TW 201634724A
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target material
target
splitter
longitudinal direction
present
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TW105106598A
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Chinese (zh)
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TWI573891B (en
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Hiroshi Takashima
Mitsuharu Fujimoto
Hide Ueno
Masashi Kaminada
Hong-Liang Chen
Jian-Ren Chou
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Hitachi Metals Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention provides a novel target material which expands the erosion area generated by sputtering, even when a long strip of target material is used, thereby increasing efficiency and reducing production cost. The target material of the present invention is an elongated strip of target material whose sputtering surface and the back of the sputter surface are smooth. The target material is bonded to a back plate, whose surface directly bonded to the target material is smooth, by a bonding material. Plate-like splitters are disposed on two longitudinal ends of the target material, and between the target material and the back plate, on the outer circumference of the two ends in the longitudinal direction of the target material. The target material and the back plate are bonded together by the splitters and the bonding material.

Description

靶材Target

本發明是有關於一種在磁控濺鍍(magnetron sputtering)法中使用的靶材。This invention relates to a target for use in a magnetron sputtering process.

作為例如用於電子零件的配線膜等的薄膜的形成技術而廣為人知的濺鍍法是在真空腔室內配置成為薄膜的母材(base material)的靶材材料,且在與所述靶材材料相對峙的位置上配置基板等,並在所述基板表面上形成薄膜的方法。具體而言,是如下方法:將稀有氣體導入至真空腔室內,對靶材材料施加直流電力或交流電力,使靶材材料表面上產生輝光放電(glow discharge),利用稀有氣體離子趕出靶材材料表面的原子,而在基板等的表面上形成薄膜,所述方法在工業上得到廣泛利用。A sputtering method widely known as a thin film forming technique for a wiring film or the like of an electronic component is a target material in which a base material of a thin film is disposed in a vacuum chamber, and is in phase with the target material. A method of forming a substrate on the surface of the substrate by arranging a substrate or the like on the surface of the crucible. Specifically, the method is: introducing a rare gas into a vacuum chamber, applying direct current power or alternating current power to the target material, causing a glow discharge on the surface of the target material, and driving the target out with the rare gas ions. The atoms on the surface of the material form a thin film on the surface of the substrate or the like, and the method is widely used industrially.

在所述濺鍍法中,磁控濺鍍法是在靶材材料的背面配置磁鐵單元,在靶材材料表面上產生隧道(tunnel)狀的磁力線,在靶材表面上捕捉由輝光放電產生的電子來提高電子密度的方法。所述磁控濺鍍法具有能夠以低稀有氣體壓力產生穩定的輝光放電,能夠以高成膜速度實現優異的薄膜品質的特長,故而得到特別廣泛地利用。In the sputtering method, the magnetron sputtering method is to arrange a magnet unit on the back surface of the target material, generate a tunnel-shaped magnetic field line on the surface of the target material, and capture the surface generated by the glow discharge on the surface of the target material. The method of electrons to increase electron density. The magnetron sputtering method has a characteristic that a stable glow discharge can be generated with a low rare gas pressure, and an excellent film quality can be achieved at a high film formation rate, and thus it is particularly widely used.

作為在所述濺鍍法中使用的靶材材料的形狀,有平面圓板、平面矩形、圓筒等,其中在以液晶顯示器為代表的平板顯示器的製造裝置中,廣泛使用具有平坦的濺鍍面的長條狀靶材材料(例如參照非專利文獻1)。As the shape of the target material used in the sputtering method, there are a flat circular plate, a flat rectangular shape, a cylinder, and the like, and in the manufacturing apparatus of a flat panel display represented by a liquid crystal display, flat sputtering is widely used. The long strip-shaped target material of the surface (for example, refer to Non-Patent Document 1).

適用於使用所述長條狀靶材材料的磁控濺鍍裝置中的磁鐵單元典型而言為如下構造:在平行地配置於靶材材料上的矩形形狀磁軛(yoke)的中央沿長邊方向配置磁鐵(中央磁鐵),以圍繞所述磁鐵的形狀在外周全周上亦配置有磁鐵(外周磁鐵)。所述磁鐵單元藉由將中央磁鐵設為N極,將外周磁鐵設為S極,而可產生自上方觀察靶材材料表面時描繪出長圓形狀的隧道狀拱形的磁力線(例如參照專利文獻1)。A magnet unit suitable for use in a magnetron sputtering apparatus using the elongated target material is typically configured as follows: a long side of a center of a rectangular shaped yoke (yoke) disposed in parallel on a target material A magnet (central magnet) is disposed in the direction, and a magnet (outer circumference magnet) is also disposed on the entire circumference of the outer circumference around the shape of the magnet. In the magnet unit, the central magnet is set to the N pole, and the outer peripheral magnet is set to the S pole, so that a tunnel-shaped arch line of magnetic force is drawn when the surface of the target material is observed from above (for example, see Patent Document 1). ).

又,在所述磁鐵單元中,已知存在如下問題:由於在靶材材料的長邊方向上的兩端部附近,靶材材料表面的磁力線水平區域變窄,故而靶材材料的侵蝕(以下亦稱作腐蝕(erosion))局部性地窄而深地推進,靶材材料的利用效率降低。所述問題在例如使用包含Mo等昂貴的稀有金屬(rare metal)的靶材材料來形成薄膜的平板顯示器的製造時,會導致製造成本的增加。Further, in the magnet unit, there is known a problem in that the horizontal portion of the magnetic field line on the surface of the target material is narrowed in the vicinity of both end portions in the longitudinal direction of the target material, so that the target material is eroded (hereinafter Also known as erosion, it is locally narrowly and deeply advanced, and the utilization efficiency of the target material is lowered. The problem causes an increase in manufacturing cost when, for example, the manufacture of a flat panel display using a target material containing an expensive rare metal such as Mo to form a thin film.

為了解決靶材材料的利用效率下降的問題,著眼於靶材材料的形狀,已提出有僅使靶材材料的長邊方向上的兩端部附近局部地增厚的構造。 另一方面,為了解決同樣的靶材材料的利用效率下降的問題,著眼於薄膜形成時的磁通量,已提出有將具有三角形的輪廓的磁分路器(magnetic shunt)固定於長條狀靶材材料的長邊方向上的規定區域內的構造。根據所述構造,使在靶材材料表面產生的磁場局部性地減弱,而使電漿形狀發生變化,由此在可擴大靶材材料的侵蝕區域的方面、使靶材材料的利用效率提高的方面優異(例如參照專利文獻2)。 [現有技術文獻] [專利文獻]In order to solve the problem that the utilization efficiency of the target material is lowered, attention has been paid to the shape of the target material, and a structure has been proposed in which only the vicinity of both end portions in the longitudinal direction of the target material is locally thickened. On the other hand, in order to solve the problem that the utilization efficiency of the same target material is lowered, focusing on the magnetic flux at the time of film formation, it has been proposed to fix a magnetic shunt having a triangular profile to a long-shaped target. The structure in a predetermined region in the longitudinal direction of the material. According to the configuration, the magnetic field generated on the surface of the target material is locally weakened, and the shape of the plasma is changed, whereby the utilization efficiency of the target material can be improved in terms of expanding the erosion region of the target material. It is excellent (for example, refer to Patent Document 2). [Prior Art Document] [Patent Literature]

[專利文獻1]日本專利特開平7-34244號公報(第5頁、第1圖) [專利文獻2]日本專利特開2012-201910號公報(第10頁、第3圖) [非專利文獻][Patent Document 1] Japanese Patent Laid-Open No. Hei 7-34244 (page 5, FIG. 1) [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-201910 (page 10, FIG. 3) [Non-Patent Literature ]

[非專利文獻1]砂賀芳雄著「平板顯示器(flat panel display,FPD)製造用大型濺鍍裝置的現狀與課題」J. Vac. Soc. Jpn.(真空),第28頁-第31頁[Non-Patent Document 1] Shahe Hiroshi, "The Status and Problems of Large-Scale Sputtering Devices for Flat Panel Display (FPD) Manufacturing" J. Vac. Soc. Jpn. (Vacuum), pp. 28 - 31

[發明所欲解決之課題] 在所述僅使靶材材料的長邊方向上的兩端部附近局部地增厚的方法中,為了與作為單純形狀的平板的靶材材料相比形成階差,需要準備專用的鑄模或熱均壓(hot isostatic pressing,HIP)罐,從而存在製造成本增加的情況。又,當與作為單純形狀的平板的靶材材料形成階差時,需要對靶材材料進行切削加工,從而加工工時變長,而且產生大量的加工屑,良率下降。因此,存在靶材材料的製造成本升高的問題。 又,在長條狀靶材材料的長邊方向上固定具有三角形的輪廓的磁分路器的方法中,將靶材材料載置於已有的濺鍍裝置上時,存在需要大規模的加修的情況。又,亦存在濺鍍時自磁鐵單元產生的磁通量的強度或分佈變得不均勻,因濺鍍而產生的侵蝕區域變得不均勻的情況。[Problems to be Solved by the Invention] In the method of locally thickening only the both end portions in the longitudinal direction of the target material, a step is formed in comparison with the target material of the flat plate as a simple shape. There is a need to prepare a dedicated mold or a hot isostatic pressing (HIP) tank, so that there is an increase in manufacturing cost. Further, when a step is formed with a target material of a flat plate having a simple shape, it is necessary to perform a cutting process on the target material, so that the processing time becomes long, and a large amount of machining chips are generated, and the yield is lowered. Therefore, there is a problem that the manufacturing cost of the target material is increased. Further, in the method of fixing a magnetic splitter having a triangular profile in the longitudinal direction of the elongated target material, when the target material is placed on an existing sputtering apparatus, there is a need for a large-scale addition. Repair situation. Further, the intensity or distribution of the magnetic flux generated from the magnet unit at the time of sputtering may be uneven, and the eroded area due to sputtering may become uneven.

本發明的目的是為了解決所述問題,提供一種即便使用長條狀靶材材料,亦會擴大因濺鍍而產生的侵蝕區域,從而利用效率高,製造成本低的新型的靶材。 [解決課題之手段]An object of the present invention is to solve the above problems and to provide a novel target which has a high utilization efficiency and a low manufacturing cost, even if a long target material is used, and an erosion region due to sputtering is enlarged. [Means for solving the problem]

本發明者對使自所述長條狀靶材材料用磁鐵單元產生的磁通量的強度、分佈均勻化,抑制靶材材料的不均勻的侵蝕,而使利用效率提高的方法進行了研究。 其結果發現,藉由將靶材材料與背板(backing plate)的接合面設為平坦形狀,在所述接合面的特定位置上插入特定形狀的分路器(shunt),而使靶材材料的利用效率大幅提高,從而達成本發明。The present inventors have studied a method of improving the utilization efficiency by uniformizing the strength and distribution of the magnetic flux generated from the long target material by the magnet unit and suppressing uneven erosion of the target material. As a result, it has been found that by setting the joint surface of the target material and the backing plate into a flat shape, a shunt of a specific shape is inserted at a specific position of the joint surface to make the target material. The utilization efficiency is greatly improved to achieve the present invention.

即,本發明是如下靶材的發明:將濺鍍面及所述濺鍍面的背面具有平坦形狀的長條狀靶材材料、以及與所述靶材材料接合的面具有平坦形狀的背板經由接合材料加以接合,並且在所述靶材材料的長邊方向兩端部,在所述靶材材料與所述背板之間沿所述靶材材料的長邊方向兩端部的外周部配置有板狀的分路器,經由所述分路器與接合材料將所述靶材材料及所述背板加以接合。 在本發明中適用的分路器較佳為大致U字形狀。 又,所述分路器更佳為大致U字狀的內周部包含強磁體,外周部包含非磁體。That is, the present invention is an invention of a target material in which a long-shaped target material having a flat shape on a sputter surface and a back surface of the sputter surface, and a back sheet having a flat surface joined to the target material Joining via a bonding material, and at both end portions in the longitudinal direction of the target material, between the target material and the backing plate, along the outer peripheral portion of both end portions of the longitudinal direction of the target material A plate-shaped splitter is disposed, and the target material and the backing plate are joined via the splitter and the bonding material. The splitter suitable for use in the present invention is preferably substantially U-shaped. Further, it is preferable that the splitter includes a strong magnet in an inner peripheral portion of a substantially U shape and a non-magnetic body in an outer peripheral portion.

本發明的靶材較佳為在所述靶材材料與所述背板之間,配置對所述靶材材料進行支撐的支撐構件。 又,較佳為所述支撐構件使用線材。 [發明的效果]Preferably, the target of the present invention is provided with a support member for supporting the target material between the target material and the backing plate. Further, it is preferable that the support member uses a wire. [Effects of the Invention]

本發明的靶材是採用長條狀的靶材材料,故而製造成本低,而且可擴大靶材材料的侵蝕區域,因此可獲得高利用效率,成為適用於薄膜形成的技術。Since the target material of the present invention uses a long-shaped target material, the manufacturing cost is low, and the erosion region of the target material can be enlarged, so that high utilization efficiency can be obtained, and the technique suitable for film formation can be obtained.

如上所述,本發明的重要特徵在於採用如下構造:將靶材材料與背板的接合面設為平坦形狀,在所述接合面的特定位置上插入分路器,並經由接合材料加以接合。具體而言,本發明的靶材如圖1所示,是將濺鍍面及其背面具有平坦形狀的靶材材料1、以及與所述靶材材料1接合的面具有平坦形狀的背板2經由接合材料3加以接合的靶材。而且,在靶材材料1的長邊方向兩端部,在靶材材料1與背板2之間沿靶材材料1的長邊方向兩端部的外周部配置有板狀的分路器4,且在長邊方向的剖面上,經由分路器4與接合材料3將靶材材料1及背板2加以接合。以下,對本發明的靶材進行詳細描述。As described above, an important feature of the present invention resides in a configuration in which a joint surface of a target material and a backing plate is formed into a flat shape, a splitter is inserted at a specific position of the joint surface, and joined by a bonding material. Specifically, as shown in FIG. 1, the target material of the present invention is a target material 1 having a flat shape on a sputter surface and a back surface thereof, and a back sheet 2 having a flat shape on a surface joined to the target material 1. A target joined by the bonding material 3 . Further, at both end portions in the longitudinal direction of the target material 1, a plate-shaped splitter 4 is disposed between the target material 1 and the backing plate 2 along the outer peripheral portion of both end portions in the longitudinal direction of the target material 1. The target material 1 and the backing plate 2 are joined to the bonding material 3 via the splitter 4 in the cross section in the longitudinal direction. Hereinafter, the target of the present invention will be described in detail.

本發明的靶材是將靶材材料的濺鍍面及濺鍍面的背面設為無凹凸或階差的平坦形狀。由此,本發明中所使用的靶材材料無需複雜的鑄模或HIP罐,靶材材料1的加工變得簡單,而且因加工而產生的切削屑亦為最小限度,故而可抑制靶材材料的製造成本。 又,本發明中所使用的背板亦與靶材材料的濺鍍面及背面同樣地設為平坦形狀,因此與靶材材料同樣地無需特別加工,可抑制製造成本。The target of the present invention has a flat shape in which the sputtering surface of the target material and the back surface of the sputtering surface are formed without unevenness or step. Therefore, the target material used in the present invention does not require a complicated mold or HIP can, the processing of the target material 1 is simple, and the chips generated by the processing are also minimized, so that the target material can be suppressed. manufacturing cost. Moreover, since the back sheet used in the present invention has a flat shape similarly to the sputtering surface and the back surface of the target material, it is not necessary to perform special processing similarly to the target material, and the manufacturing cost can be suppressed.

在本發明中,在靶材材料1的長邊方向兩端部,在靶材材料1與背板2之間,沿靶材材料1的長邊方向兩端部的外周部配置板狀的分路器4。由此,本發明的靶材獲得以下兩個效果。 在用於長條狀靶材材料中的磁鐵單元中,長邊方向兩端部的磁力線描繪出大致U字形狀隧道狀拱形。在所述區域內,磁力線的水平區域特別窄,而且,磁場的強度因地點而不同,故而靶材材料的侵蝕局部性地窄而深地推進。因此,在本發明中,藉由在如上所述的侵蝕推進的沿靶材材料的長邊方向兩端部的外周部的部分配置分路器,對磁力線進行控制,可提高靶材材料的利用效率。 又,本發明的靶材藉由將分路器4設於靶材材料1與背板2之間,可特別有效地控制靶材材料1表面附近的磁力線。In the present invention, a plate-like portion is disposed between the target material 1 and the backing plate 2 at both end portions in the longitudinal direction of the target material 1 at both end portions in the longitudinal direction of the target material 1. Road device 4. Thus, the target of the present invention achieves the following two effects. In the magnet unit used in the long-shaped target material, the magnetic lines of force at both ends in the longitudinal direction form a substantially U-shaped tunnel-shaped arch. In the region, the horizontal area of the magnetic lines of force is particularly narrow, and the strength of the magnetic field varies depending on the location, so that the erosion of the target material is locally narrow and deep. Therefore, in the present invention, by providing a splitter in a portion along the outer peripheral portion of both end portions in the longitudinal direction of the target material as described above, the magnetic flux can be controlled to improve the utilization of the target material. effectiveness. Further, the target of the present invention can particularly effectively control the magnetic lines of force in the vicinity of the surface of the target material 1 by providing the splitter 4 between the target material 1 and the backing plate 2.

在本發明中適用的分路器可使用強磁體,若為純金屬,則例如可舉出Fe、Ni、Co等,若為合金,則例如可舉出坡莫合金(permalloy)、SUS 430等合金等,可根據濺鍍條件中所需要的磁特性進行適當選擇。而且,將本發明中適用的分路器形成為如圖2(a)所示的沿靶材材料的長邊方向兩端部的外周部的形狀,以便沿靶材材料的長邊方向兩端部的外周部配置。 在本發明中適用的分路器的大小、厚度可根據自磁鐵單元產生的磁力線的分佈及磁場的強度而設定。亦可局部地改變厚度,或接合磁特性不同的材料等。The splitter to which the present invention is applied may be a ferromagnetic material, and if it is a pure metal, for example, Fe, Ni, Co, or the like may be mentioned, and if it is an alloy, for example, permalloy, SUS 430, etc. may be mentioned. Alloys and the like can be appropriately selected depending on the magnetic properties required in the sputtering conditions. Further, the splitter to which the present invention is applied is formed into a shape of an outer peripheral portion along both end portions in the longitudinal direction of the target material as shown in Fig. 2(a) so as to be along both ends in the longitudinal direction of the target material. The outer peripheral part of the department is configured. The size and thickness of the splitter to which the present invention is applied can be set in accordance with the distribution of magnetic lines of force generated from the magnet unit and the strength of the magnetic field. It is also possible to locally change the thickness or to bond materials having different magnetic properties.

在本發明中,如圖2(b)所示,較佳為將分路器4的形狀設為大致U字形狀,且沿靶材材料的長邊方向兩端部的U字形狀配置所述U字形狀。在濺鍍裝置的磁鐵單元的長邊方向兩端部產生的磁力線在自上方觀察靶材時,形成為描繪出大致U字形狀的隧道形狀,藉由插入與所述隧道形狀相吻合的大致U字形狀的分路器,可擴大磁力線的水平區域,降低局部的磁場強度的不均,從而進一步提高靶材材料的利用效率。再者,當將分路器4的形狀設為大致U字形狀時,如圖2(c)所示,亦可將非磁體插入至強磁體的內周部,由此,可確保對分路器的內周部進行支撐的功能。In the present invention, as shown in FIG. 2(b), it is preferable that the shape of the splitter 4 is substantially U-shaped, and the U-shaped shape at both end portions in the longitudinal direction of the target material is disposed. U shape. The magnetic lines of force generated at the both end portions in the longitudinal direction of the magnet unit of the sputtering apparatus are formed to have a substantially U-shaped tunnel shape when the target is viewed from above, and the substantially U shape is matched by the shape of the tunnel. The word-shaped splitter can enlarge the horizontal area of the magnetic lines of force and reduce the unevenness of the local magnetic field strength, thereby further improving the utilization efficiency of the target material. Further, when the shape of the splitter 4 is substantially U-shaped, as shown in FIG. 2(c), a non-magnetic body can be inserted into the inner peripheral portion of the ferromagnetic body, thereby ensuring the pair of branches. The inner peripheral portion of the device performs the function of supporting.

在本發明中,如圖2(d)所示,較佳為分路器4的大致U字狀的內周部包含強磁體,外周部包含非磁體。將靶材材料1與背板2在經由接合材料3加以接合時,需要相對於長邊方向兩端部的規定位置準確地配置大致U字型分路器4。此時,大致U字狀分路器4的外周部較佳為將外側的輪廓設為與靶材材料1的外周部的形狀相同的形狀,以易於定位。而且,較佳為設為如下構造體的分路器4:大致U字狀分路器4的內周部設為具備分路器功能的大致U字狀的強磁體,將大致U字狀分路器4的外周部設為非磁體,且將該些內周部及外周部加以並接接合。由此,可準確且迅速地進行接合時的定位。In the present invention, as shown in FIG. 2(d), it is preferable that the substantially U-shaped inner peripheral portion of the splitter 4 includes a ferromagnetic body, and the outer peripheral portion includes a non-magnetic body. When the target material 1 and the backing plate 2 are joined via the bonding material 3, it is necessary to accurately arrange the substantially U-shaped splitter 4 with respect to a predetermined position at both end portions in the longitudinal direction. At this time, it is preferable that the outer peripheral portion of the substantially U-shaped splitter 4 has the same outer shape as the outer peripheral portion of the target material 1 so as to be easily positioned. Further, it is preferable to use a splitter 4 having a structure in which the inner peripheral portion of the substantially U-shaped splitter 4 is a substantially U-shaped ferromagnetic body having a function of a splitter, and is substantially U-shaped. The outer peripheral portion of the router 4 is a non-magnetic body, and the inner peripheral portion and the outer peripheral portion are joined in parallel. Thereby, the positioning at the time of joining can be performed accurately and quickly.

又,分路器4的外周部具有沿靶材材料的外周部的形狀的輪廓,只要具備對大致U字狀的強磁體的內周部進行支撐的功能即可,較佳為非磁體。其原因在於,若分路器4的外周部具有強磁性,則根據濺鍍條件,存在破壞分路器4的功能的情況。再者,當將分路器4的形狀設為大致U字形狀時,如圖2(e)所示,亦可在強磁體的內周部插入非磁體,由此可確保對分路器的內周部進行支撐的功能。 作為用於分路器4的外周部的非磁體的材質,可自導熱率高,加工容易,且具備適度剛性的例如Cu、Al或含有50質量%以上的該些金屬的合金中適當選擇。Further, the outer peripheral portion of the splitter 4 has a contour along the outer peripheral portion of the target material, and may have a function of supporting the inner peripheral portion of the substantially U-shaped ferromagnetic material, and is preferably a non-magnetic body. This is because if the outer peripheral portion of the splitter 4 has strong magnetism, the function of the splitter 4 may be broken depending on the sputtering conditions. Further, when the shape of the splitter 4 is substantially U-shaped, as shown in FIG. 2(e), a non-magnetic body may be inserted into the inner peripheral portion of the ferromagnetic body, thereby ensuring the pair of splitters. The inner peripheral part supports the function. The material of the non-magnetic material used for the outer peripheral portion of the splitter 4 can be suitably selected from the group consisting of Cu, Al, or an alloy containing 50% by mass or more of the metal having a high thermal conductivity and easy processing.

在本發明中,較佳為在靶材材料1與背板2之間,配置圖1所例示的支撐構件5。由此,本發明的靶材可使靶材材料1與背板2的間隔保持為固定。而且,在本發明中適用的支撐構件5較佳為可確保與分路器4的厚度為相同高度的厚度,由此可一面使靶材材料1與背板2的間隔保持為固定,一面使接合材料3的厚度變得均勻,從而可實現穩定的接合。 又,在背板2上的兩端部分配置分路器4時,若以成為用以使分路器4的靠內的端部抵達應配置的位置的標記的方式預先配置有支撐構件5,則可準確且迅速地進行分路器4的定位。由於在本發明中適用的靶材材料與背板的接合面分別為遍及長邊方向全長無凹凸或階差的平坦形狀,故而所述成為特別有效的手段。In the present invention, it is preferable to arrange the support member 5 illustrated in Fig. 1 between the target material 1 and the backing plate 2. Thus, the target of the present invention can keep the distance between the target material 1 and the backing plate 2 constant. Further, it is preferable that the support member 5 to which the present invention is applied has a thickness that is the same as the thickness of the splitter 4, whereby the interval between the target material 1 and the backing plate 2 can be kept constant while The thickness of the bonding material 3 becomes uniform, so that stable bonding can be achieved. Further, when the splitter 4 is disposed at both end portions of the backboard 2, the support member 5 is disposed in advance so that the inner end portion of the splitter 4 reaches the position to be placed. The positioning of the splitter 4 can be performed accurately and quickly. Since the joint surface of the target material and the back sheet which are applied in the present invention is a flat shape having no unevenness or step difference throughout the entire length in the longitudinal direction, the above is a particularly effective means.

在本發明中,較佳為使用線材作為支撐構件5。此時,減小成為支撐構件5的線材的體積,使所述支撐構件5與靶材材料1及背板2分別線接觸,而降低靶材材料1與背板2之間的配置接合材料3的位置上的支撐構件5的佔有率。由此,本發明的靶材可一面使靶材材料1與背板2的間隔保持為固定,一面以均勻的厚度配置接合材料3,從而可確保接合強度或維持導熱性。再者,作為支撐構件5的材質,只要是具有高導熱率,切割等的加工容易,具備適度的剛性的材料,則可應用任意材料。 又,支撐構件5可如圖1所例示,相對於靶材材料1的長邊方向沿長邊方向以規定間隔平行地配置,亦可沿靶材材料1的長邊方向以規定間隔平行地配置。 [實施例]In the present invention, it is preferred to use a wire as the support member 5. At this time, the volume of the wire serving as the support member 5 is reduced, and the support member 5 is brought into line contact with the target material 1 and the backing plate 2, respectively, and the arrangement bonding material 3 between the target material 1 and the backing plate 2 is lowered. The occupancy of the support member 5 at the position. Thereby, the target material of the present invention can hold the bonding material 3 with a uniform thickness while maintaining the interval between the target material 1 and the backing plate 2, thereby ensuring bonding strength or maintaining thermal conductivity. In addition, as the material of the support member 5, any material can be applied as long as it has high thermal conductivity, easy processing such as cutting, and a material having moderate rigidity. Further, as shown in FIG. 1, the support member 5 may be arranged in parallel with each other at a predetermined interval in the longitudinal direction with respect to the longitudinal direction of the target material 1, or may be arranged in parallel at a predetermined interval along the longitudinal direction of the target material 1. . [Examples]

首先,準備:Mo靶材材料,濺鍍面及所述濺鍍面的背面具有平坦的、厚度16 mm×寬度180 mm×長度2650 mm的形狀,純度為99.95%;背板,與所述靶材材料的背面接合的面具有平坦形狀;以及分路器,在圖2(d)所示的強磁體部配設有Ni,在非磁體部配設有Cu,厚度為0.3 mm。 其次,如圖1所示,在靶材材料1的長邊方向兩端部、靶材材料1與背板2之間沿靶材材料1的長邊方向兩端部的外周部配置所述分路器4,經由分路器4與接合材料3將靶材材料1及背板2加以接合而製作本發明的靶材。 又,亦製作如下成為比較例的靶材:不插入分路器,而將靶材材料及背板僅經由接合材料加以接合。First, prepare: Mo target material, the sputter surface and the back surface of the sputter surface have a flat shape with a thickness of 16 mm × width 180 mm × length 2650 mm, purity of 99.95%; back plate, and the target The surface of the material material joined to the back surface has a flat shape; and the splitter is provided with Ni in the strong magnet portion shown in FIG. 2(d) and Cu in the non-magnetic portion, and has a thickness of 0.3 mm. Next, as shown in FIG. 1, the points are arranged along the outer peripheral portions of both end portions in the longitudinal direction of the target material 1 between the target material 1 and the back sheet 2 at both end portions in the longitudinal direction of the target material 1. The road 4 is joined to the target material 1 and the backing plate 2 via the splitter 4 and the bonding material 3 to produce the target of the present invention. Further, a target material as a comparative example was produced as follows: the target material and the back sheet were joined only by the bonding material without inserting the splitter.

將如上所述而獲得的各靶材設置於愛發科(Ulvac)股份有限公司製的磁控管(magnetron)濺鍍裝置內,使用交流電源,利用Ar氣作為濺鍍氣體,在氣壓0.8 Pa、投入功率80 kW的條件下進行濺鍍測試。途中,數次中斷濺鍍,測定腐蝕最深的部分的靶材材料的剩餘厚度達到1 mm以下之前的累計功率即功率[kW]×濺鍍時間[hr]。將其結果示於表1。Each of the targets obtained as described above was placed in a magnetron sputtering apparatus manufactured by Ulvac Co., Ltd., and an alternating current power source was used, and Ar gas was used as a sputtering gas at a gas pressure of 0.8 Pa. The sputtering test was carried out under the condition of an input power of 80 kW. On the way, the sputtering was interrupted several times, and the cumulative power before the remaining thickness of the target material of the deepest portion was 1 mm or less, that is, the power [kW] × the sputtering time [hr]. The results are shown in Table 1.

[表1] [Table 1]

若使用將靶材材料及背板僅經由接合材料加以接合的成為比較例的靶材來進行濺鍍測試,則腐蝕推進而靶材材料的剩餘厚度達到1 mm以下之前的累計功率為15000 kW·hr。 另一方面,若使用在特定位置插入有特定形狀的分路器的本發明的靶材來進行濺鍍測試,則腐蝕推進而靶材材料的剩餘厚度達到1 mm以下之前的累計功率為19000 kW·hr,相對於比較例而言大幅增加。其意味著靶材的壽命得到大幅提高,從而可確認本發明的靶材的有效性。When a sputtering test is performed using a target material of a comparative example in which a target material and a backing plate are joined only via a bonding material, the cumulative power before the corrosion progresses and the remaining thickness of the target material is 1 mm or less is 15,000 kW· Hr. On the other hand, when the sputtering test is performed using the target of the present invention in which a splitter having a specific shape is inserted at a specific position, the cumulative power before the corrosion progresses and the remaining thickness of the target material reaches 1 mm or less is 19,000 kW. · hr, which is greatly increased with respect to the comparative example. This means that the life of the target is greatly improved, so that the effectiveness of the target of the present invention can be confirmed.

1‧‧‧靶材材料
2‧‧‧背板
3‧‧‧接合材料
4‧‧‧分路器
5‧‧‧支撐構件
1‧‧‧target material
2‧‧‧ Backplane
3‧‧‧ joining materials
4‧‧‧Splitter
5‧‧‧Support members

圖1是表示本發明的靶材的一例的示意圖。 圖2(a)~圖2(e)是表示本發明的靶材中適用的分路器形狀的一例的示意圖。Fig. 1 is a schematic view showing an example of a target of the present invention. 2(a) to 2(e) are schematic views showing an example of a shape of a splitter to which the target of the present invention is applied.

1‧‧‧靶材材料 1‧‧‧target material

2‧‧‧背板 2‧‧‧ Backplane

3‧‧‧接合材料 3‧‧‧ joining materials

4‧‧‧分路器 4‧‧‧Splitter

5‧‧‧支撐構件 5‧‧‧Support members

Claims (5)

一種靶材,將濺鍍面及所述濺鍍面的背面具有平坦形狀的長條狀靶材材料、以及與所述靶材材料接合的面具有平坦形狀的背板經由接合材料加以接合,所述靶材的特徵在於:在所述靶材材料的長邊方向兩端部,在所述靶材材料與所述背板之間沿所述靶材材料的長邊方向兩端部的外周部配置有板狀的分路器,經由所述分路器與接合材料將所述靶材材料及所述背板加以接合。A target material in which a long-shaped target material having a flat shape on a sputter surface and a back surface of the sputter surface, and a back sheet having a flat surface joined to the target material are joined via a bonding material. The target material is characterized in that the outer peripheral portion of both end portions in the longitudinal direction of the target material is between the target material and the back plate at both end portions in the longitudinal direction of the target material. A plate-shaped splitter is disposed, and the target material and the backing plate are joined via the splitter and the bonding material. 如申請專利範圍第1項所述的靶材,其中所述分路器為大致U字形狀。The target of claim 1, wherein the splitter has a substantially U shape. 如申請專利範圍第2項所述的靶材,其中所述分路器的大致U字狀的內周部包含強磁體,外周部包含非磁體。The target according to claim 2, wherein the substantially U-shaped inner peripheral portion of the splitter includes a ferromagnetic body, and the outer peripheral portion includes a non-magnetic body. 如申請專利範圍第1項至第3項中任一項所述的靶材,其中在所述靶材材料與所述背板之間,配置對所述靶材材料進行支撐的支撐構件。The target according to any one of claims 1 to 3, wherein a support member supporting the target material is disposed between the target material and the backing plate. 如申請專利範圍第4項所述的靶材,其中所述支撐構件包含線材。The target of claim 4, wherein the support member comprises a wire.
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TW201335405A (en) * 2012-02-24 2013-09-01 Sumika Technology Co Ltd Composite target and method of manufacturing the same

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