TW201631878A - High frequency magnetizing device - Google Patents
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本發明為一種高頻式充磁裝置,尤指一種利用相對於市電電壓頻率為高頻(數kHz)充磁電路提高輸出電壓,以提供磁化所需之大電流。The invention relates to a high frequency magnetizing device, in particular to a high frequency (several kHz) magnetizing circuit for increasing the output voltage with respect to the mains voltage frequency to provide a large current required for magnetization.
一般所稱的磁性材料可分為軟磁、硬磁。所謂的軟、硬磁是依材料磁化後所殘留的保磁力硬度區分。一般而言硬磁是指不易磁化亦不易退磁,軟磁則反之。在工業界常見的硬磁種類包括合金磁鐵、陶瓷磁鐵、稀土類磁鐵。軟磁則為矽鋼片、軟質鐵氧磁體(例如錳鋅鐵氧磁體、鎳鋅鐵氧磁體),另外稀土類磁鐵以釹鐵硼為目前性能最高之永磁材料。稀土磁鐵矯頑磁力強且不易被退磁,雖然其溫度穩定性較差,但隨著材料技術的進步,目前溫度已可達240℃以上。Generally referred to as magnetic materials can be divided into soft magnetic, hard magnetic. The so-called soft and hard magnetic are distinguished by the coercive hardness remaining after the magnetization of the material. Generally speaking, hard magnetic means that it is not easy to magnetize and is not easy to demagnetize, and soft magnetic is the opposite. Hard magnetic types commonly found in the industry include alloy magnets, ceramic magnets, and rare earth magnets. Soft magnetic is made of silicon steel sheet, soft ferrite magnet (such as manganese-zinc ferrite magnet, nickel-zinc ferrite magnet), and rare earth magnet with neodymium iron boron as the highest performance permanent magnet material. Rare earth magnets have strong coercive force and are not easily demagnetized. Although their temperature stability is poor, with the advancement of materials technology, the current temperature has reached 240 °C.
在上述磁性材料的應用中,舉凡馬達、發電機、家電設備、工業生產儀器、機電系統都可以看到其扮演著極為關鍵之角色。為對該磁性材料加以磁化,須額外使用一充磁裝置,透過一充磁軛對磁性材料進行磁化。圖8為一傳統電容式充磁裝置的示意圖,交流市電AC輸入先經由一低頻變壓器81升壓至所需放電之電容電壓,升壓後的電壓經由一全橋整流電路82對一電容組C充電,圖中只以單一個電容的元件符號加以表示,該電容組C為多顆電容串、並聯組成之一電容模組,該電容組C之典型耐壓值約需數千伏特。當電容組C充電完成後,將連接在該電容組C與該全橋整流電路82之間的一電容組開關SCR1關閉,再將電容組C所儲存之能量透過一矽控整流器開關SCR2對電感性的一充磁軛線圈83放電,產生強力磁場將磁性材料磁化。圖8所示的傳統電容式充磁裝置其電路動作,可大致分為以下三個階段:In the application of the above magnetic materials, motors, generators, household electrical appliances, industrial production equipment, and electromechanical systems can all be seen as playing a crucial role. In order to magnetize the magnetic material, an additional magnetizing means is used to magnetize the magnetic material through a magnetizing yoke. 8 is a schematic diagram of a conventional capacitive magnetization device. The AC mains AC input is first boosted to a desired discharge capacitor voltage via a low frequency transformer 81. The boosted voltage is coupled to a capacitor bank C via a full bridge rectifier circuit 82. Charging, the figure is only represented by the symbol of a single capacitor. The capacitor group C is a capacitor string composed of multiple capacitors in parallel. The typical withstand voltage of the capacitor group C is about several thousand volts. After the charging of the capacitor group C is completed, a capacitor group switch SCR1 connected between the capacitor group C and the full bridge rectifier circuit 82 is turned off, and the energy stored in the capacitor group C is transmitted through a voltage controlled rectifier switch SCR2. The inductive magnetic yoke coil 83 is discharged, generating a strong magnetic field to magnetize the magnetic material. The circuit operation of the conventional capacitive magnetizing device shown in FIG. 8 can be roughly divided into the following three stages:
一、電容充電階段:打開(ON)該電容組開關SCR1,交流市電AC輸入經由該低頻變壓器81升壓,透過該全橋整流電路82將交流弦波轉換為全波,接著對該電容組C充電。充電完成後,關閉(OFF)該電容組開關SCR1。1. Capacitor charging phase: Turning on the capacitor bank switch SCR1, the AC mains AC input is boosted via the low frequency transformer 81, and the AC bridge wave is converted into a full wave through the full bridge rectifier circuit 82, and then the capacitor group C is Charging. After the charging is completed, the capacitor group switch SCR1 is turned off (OFF).
二、磁化階段:以脈波觸發該矽控整流器開關SCR2導通,令電容組C上的能量透過矽控整流器開關SCR2放電至充磁軛線圈83,產生強力磁場對待充磁材料進行磁化。此一充磁過程需持續數百個ms。2. Magnetization phase: The pulse-controlled trigger switch SCR2 is turned on, so that the energy on the capacitor group C is discharged to the magnetizing yoke coil 83 through the step-controlled rectifier switch SCR2, and a strong magnetic field is generated to magnetize the magnetized material. This magnetization process lasts for hundreds of ms.
三、飛輪二極體導通階段:當充磁軛線圈83開始放電,電流開始下降,充磁軛線圈之等效電感L與電容組C電壓同極性,此時飛輪二極體Dw成逆向偏壓狀態;當SCR2關閉,如充磁軛電流尚未降到零,則依據冷次定律,充磁軛線圈之等效電感L極性呈相反狀態,此時飛輪二極體Dw成順向偏壓狀態,以提供充磁電流續流路徑,直到該充磁電流降到零止。Third, the flywheel diode conduction phase: When the magnetizing yoke coil 83 starts to discharge, the current begins to drop, the equivalent inductance L of the magnetizing yoke coil and the voltage of the capacitor group C are the same polarity, and the flywheel diode Dw is reverse biased at this time. State; when SCR2 is turned off, if the current of the magnetizing yoke has not dropped to zero, according to the law of cold times, the polarity of the equivalent inductance L of the magnetizing yoke coil is in the opposite state, and the flywheel diode Dw is in a forward bias state. To provide a magnetizing current freewheeling path until the magnetizing current drops to zero.
傳統電容式充磁裝置係透過該低頻變壓器81升壓,經由全橋整流電路82對電容組C充電,再將儲存在電容組C能量放電至充磁軛負載。但由於需透過低頻變壓器81升壓,該電容組C又是使用多個串、並聯的大薄膜電容所構成,整體電容式充磁裝置具有重量高、體積大以及製作成本龐大等諸多問題。The conventional capacitive magnetizing device is boosted by the low frequency transformer 81, charges the capacitor group C via the full bridge rectifier circuit 82, and discharges the energy stored in the capacitor group C to the charging yoke load. However, since it needs to be boosted by the low-frequency transformer 81, the capacitor group C is composed of a plurality of large-film capacitors connected in series and in parallel. The overall capacitive magnetization device has many problems such as high weight, large volume, and large production cost.
鑑於上述問題,本發明之主要目的是提供一種重量、體積相對減小且較低成本即可製作之高頻式充磁裝置。In view of the above problems, it is a primary object of the present invention to provide a high frequency magnetizing apparatus which can be manufactured with a relatively small weight, a relatively small volume and a low cost.
為達成上述目的,該高頻式充磁裝置包含: 一整流電路,將一交流市電整流成為一直流電壓; 一充磁電路,連接該整流電路,利用該直流電壓建立一N倍直流電壓的充磁輸出電壓,其中N>=2; 一輸出開關,串聯在該充磁電路及一充磁軛之間,其中該輸出開關依據一高頻驅動信號交替地導通/截止,令該充磁輸出電壓轉移至充磁軛並在該充磁軛上產生一充磁電流; 一控制電路,控制該充磁電路建立該充磁輸出電壓,並連接該輸出開關以輸出該高頻驅動信號,其中該高頻驅動信號的頻率至少大於1kHz以上。In order to achieve the above object, the high frequency magnetizing device comprises: a rectifying circuit for rectifying an AC main current into a DC voltage; a magnetizing circuit connected to the rectifying circuit, and using the DC voltage to establish a charging of N times DC voltage a magnetic output voltage, wherein N>=2; an output switch connected in series between the magnetizing circuit and a charging yoke, wherein the output switch is alternately turned on/off according to a high frequency driving signal, and the magnetizing output voltage is Transferring to the magnetizing yoke and generating a magnetizing current on the magnetizing yoke; a control circuit controlling the magnetizing circuit to establish the magnetizing output voltage, and connecting the output switch to output the high frequency driving signal, wherein the high The frequency of the frequency drive signal is at least greater than 1 kHz.
本發明之高頻式充磁裝置的電路動作包含一充電階段及一充磁階段,在該充電階段中,利用該充磁電路將直流電壓轉換升壓至所需的充磁電壓值,再於充磁階段中,以高頻的方式切換該輸出開關,令充磁電路累積的能量轉移至充磁軛,產生大輸出電流而對待充磁材料進行磁加載。The circuit action of the high frequency magnetizing device of the present invention comprises a charging phase and a magnetizing phase, in which the DC voltage is converted and boosted to a desired magnetizing voltage value by the magnetizing circuit, and then In the magnetization phase, the output switch is switched at a high frequency to transfer the energy accumulated by the magnetizing circuit to the magnetizing yoke, generating a large output current and magnetically loading the material to be magnetized.
該高頻式充磁裝置主要以功率電晶體、二極體及電容組成,不需使用傳統變壓器、電感器及大體積的高壓電容,故整體體積可相對減小,並可降低製作成本。The high-frequency magnetizing device is mainly composed of a power transistor, a diode and a capacitor, and does not need to use a conventional transformer, an inductor and a large-capacity high-voltage capacitor, so the overall volume can be relatively reduced, and the manufacturing cost can be reduced.
請參考圖1、2所示,本創作高頻式充磁裝置包含有一整流電路10、一充磁電路20、一輸出開關S3、一充磁軛30及一控制電路40。Referring to FIGS. 1 and 2, the high frequency magnetization device comprises a rectifier circuit 10, a magnetization circuit 20, an output switch S3, a magnetizing yoke 30 and a control circuit 40.
該整流電路10接收一交流市電AC,將該交流市電AC轉換為一直流電壓Vm,該整流電路10在本實施例中是一全波整流電路,具有兩輸出端。The rectifier circuit 10 receives an AC mains AC and converts the AC mains AC to a DC voltage Vm. In the present embodiment, the rectifier circuit 10 is a full-wave rectification circuit having two output terminals.
該充磁電路20連接該整流電路10的輸出端,利用該直流電壓建立一N倍直流電壓Vm的充磁輸出電壓,其中N>=2。充磁電路20包含一儲能電容Cd、一第一開關S1、一第二開關S2、第一電容C1~第六電容C6、第一二極體D1~第四二極體D4。在本實施中,該第一電容C1與第二電容C2具有相同電容值;該第三電容C3與第四電容C4具有相同電容值;該第五電容C5與第六電容C6具有相同電容值。The magnetizing circuit 20 is connected to the output end of the rectifying circuit 10, and uses the DC voltage to establish a magnetizing output voltage of N times the DC voltage Vm, where N>=2. The magnetizing circuit 20 includes a storage capacitor Cd, a first switch S1, a second switch S2, a first capacitor C1 to a sixth capacitor C6, and first to fourth diodes D1 to D4. In this embodiment, the first capacitor C1 and the second capacitor C2 have the same capacitance value; the third capacitor C3 and the fourth capacitor C4 have the same capacitance value; the fifth capacitor C5 and the sixth capacitor C6 have the same capacitance value.
該儲能電容Cd連接該整流電路10的兩輸出端;該第一開關S1與該第二開關S2串聯後,亦連接在整流電路10的兩輸出端,第一開關S1與該第二開關S2可由功率電晶體構成;該第一電容C1與該第二電容C2串聯後,同樣連接在整流電路10的兩輸出端,該第一電容C1與第二電容C2作為一分壓電路,可對直流電壓Vm進行分壓。其中,該第一開關S1與該第二開關S2之串聯節點作為一第一輸出端O1,該第一電容C1與該第二電容C2之串聯節點作為一第二輸出端O2,隨著交替導通該第一開關S1及第二開關S2可在兩輸出端O1、O2交替輸出該第一電容C1與第二電容C2上的電壓,因此在兩輸出端O1、O2輸出的電壓交替呈現不同極性。The storage capacitor Cd is connected to the two output ends of the rectifier circuit 10; the first switch S1 is connected in series with the second switch S2, and is also connected to the two output ends of the rectifier circuit 10, the first switch S1 and the second switch S2 The first capacitor C1 and the second capacitor C2 are connected to the two output ends of the rectifier circuit 10, and the first capacitor C1 and the second capacitor C2 are used as a voltage dividing circuit. The DC voltage Vm is divided. The series node of the first switch S1 and the second switch S2 serves as a first output terminal O1, and the series node of the first capacitor C1 and the second capacitor C2 serves as a second output terminal O2, and is alternately turned on. The first switch S1 and the second switch S2 can alternately output the voltages on the first capacitor C1 and the second capacitor C2 at the two output terminals O1 and O2, so that the voltages outputted by the two output terminals O1 and O2 alternately exhibit different polarities.
該第三電容C3與該第四電容C4串聯,兩電容C3、C4的串聯節點連接第一輸出端O1。該第一二極體D1與該第三二極體D3串聯,且該第一極體D1的正極與該第三二極體D3的負極串聯相接後,再連接到該第二輸出端O2,該第一二極體D1的負極連接第三電容C3,該第三二極體D3的正極連接第四電容C4。該第五電容C5與該第六電容C6串聯,兩電容C5、C6的串聯節點連接該第二輸出端O2,其中該第五電容C5與該第六電容C6串聯後的兩端分別作為充磁電路20的正輸出端、負輸出端。該第二二極體D2的正極連接該第一二極體D1的負極,該第二二極體D2的負極連接充磁電路20的正輸出端。該第四二極體D4的負極連接該第三二極體D1的正極,該第四二極體D4的正極連接該充磁電路20的負輸出端。The third capacitor C3 is connected in series with the fourth capacitor C4, and the series node of the two capacitors C3 and C4 is connected to the first output terminal O1. The first diode D1 is connected in series with the third diode D3, and the anode of the first pole D1 is connected in series with the cathode of the third diode D3, and then connected to the second output terminal O2. The cathode of the first diode D1 is connected to the third capacitor C3, and the anode of the third diode D3 is connected to the fourth capacitor C4. The fifth capacitor C5 is connected in series with the sixth capacitor C6. The series node of the two capacitors C5 and C6 is connected to the second output terminal O2. The two ends of the fifth capacitor C5 and the sixth capacitor C6 are respectively magnetized. The positive output terminal and the negative output terminal of the circuit 20. The anode of the second diode D2 is connected to the cathode of the first diode D1, and the cathode of the second diode D2 is connected to the positive output of the magnetizing circuit 20. The cathode of the fourth diode D4 is connected to the anode of the third diode D1, and the anode of the fourth diode D4 is connected to the negative output of the magnetizing circuit 20.
該輸出開關S3的一端連接該充磁電路20的正輸出端,輸出開關S3的另一端連接該充磁軛30的其中一端。該充磁軛30的另外一端連接該充磁電路20的負輸出端。在充磁電路20的正、負輸出端之間可再連接一飛輪二極體Dw,其與充磁軛30並聯。One end of the output switch S3 is connected to the positive output end of the magnetizing circuit 20, and the other end of the output switch S3 is connected to one end of the magnetizing yoke 30. The other end of the magnetizing yoke 30 is connected to the negative output terminal of the magnetizing circuit 20. A flywheel diode Dw may be reconnected between the positive and negative output terminals of the magnetizing circuit 20 in parallel with the magnetizing yoke 30.
該控制電路40包含一微控制器,該微控制器通過驅動電路42連接該第一開關S1、第二開關S2及該充電開關S3,控制其開閉。The control circuit 40 includes a microcontroller that is connected to the first switch S1, the second switch S2, and the charging switch S3 via the drive circuit 42 to control its opening and closing.
以下將詳細說明本發明的電路動作,包含一充電階段及一充磁階段。在該充電階段中,輸出開關S3維持截止(OFF),而電路可細分為以下四個時段:The circuit operation of the present invention will be described in detail below, including a charging phase and a magnetizing phase. In this charging phase, the output switch S3 remains off (OFF), and the circuit can be subdivided into the following four periods:
第一時段:請參考圖3A所示,交流市電AC經過整流電路10轉換後可在儲能電容Cd上建立一直流電壓Vm,直流電壓Vm經由串聯的第一電容C1及第二電容C2加以分壓,每個電容上的電壓為0.5Vm,該第一開關S1受微控制器51控制導通(ON),第二開關S2則受控截止(OFF),此時跨在該第一電容C1上的電壓(0.5Vm)會使得第三二極體D3處在順向偏壓狀態而導通、第四二極體D4逆偏截止,對第四電容C4進行充電且充入電壓為第一電容C1上的電壓(0.5Vm)。又第一二極體D1、第二二極體D2處於逆偏電壓截止狀態。此第一時段之電流路徑如圖3A之虛線箭頭符號所示。The first time period: Please refer to FIG. 3A, after the AC mains AC is converted by the rectifying circuit 10, a DC voltage Vm can be established on the storage capacitor Cd, and the DC voltage Vm is divided by the first capacitor C1 and the second capacitor C2 connected in series. Pressing, the voltage on each capacitor is 0.5Vm, the first switch S1 is controlled to be turned on (ON) by the microcontroller 51, and the second switch S2 is controlled to be turned off (OFF), at this time across the first capacitor C1. The voltage (0.5Vm) causes the third diode D3 to be turned on in the forward bias state, the fourth diode D4 is reverse biased off, and the fourth capacitor C4 is charged and the charging voltage is the first capacitor C1. The voltage on it (0.5Vm). Further, the first diode D1 and the second diode D2 are in a reverse bias voltage cut-off state. The current path for this first time period is shown by the dashed arrow symbol in Figure 3A.
第二時段:如圖3B所示,該第一開關S1受微控制器51控制截止,該第二開關S2導通,則跨在第二電容C2上的電壓(0.5Vm)會使得二極體D1處於順向偏壓狀態而導通、第三二極體D3則逆偏狀態而截止,第二電容C2上的電壓對第三電容C3充電,且充入的電壓等於第二電容C2上的電壓(0.5Vm)。該第二二極體D2、第四二極體D4處於逆偏電壓截止狀態。第二工作時段之電流路徑如虛線箭頭所示。The second period: as shown in FIG. 3B, the first switch S1 is controlled to be turned off by the microcontroller 51, and the second switch S2 is turned on, and the voltage across the second capacitor C2 (0.5 Vm) causes the diode D1 to be turned off. Turning on in the forward bias state, the third diode D3 is turned off in the reverse bias state, and the voltage on the second capacitor C2 charges the third capacitor C3, and the charged voltage is equal to the voltage on the second capacitor C2 ( 0.5Vm). The second diode D2 and the fourth diode D4 are in a reverse bias voltage cut-off state. The current path for the second working period is indicated by the dashed arrow.
第三時段:如圖3C所示,該第一開關S1再度受控導通,第二開關S2則截止,則先前工作時段中建立在第一電容C1上的電壓(0.5Vm)與第三電容C3上的電壓(0.5Vm)形成串聯之態勢,故可使得第一二極體D1處於逆偏電壓截止、第二二極體D2順偏導通。此時第五電容C5上的電壓為第一電容C1與第三電容C3之電壓和,故為Vm。又第三二極體D3、第四二極體D4處於逆偏電壓截止狀態。The third period: as shown in FIG. 3C, the first switch S1 is controlled to be turned on again, and the second switch S2 is turned off, and the voltage (0.5Vm) and the third capacitor C3 established on the first capacitor C1 in the previous working period are The upper voltage (0.5Vm) forms a series potential, so that the first diode D1 is turned off at the reverse bias voltage and the second diode D2 is turned on. At this time, the voltage on the fifth capacitor C5 is the sum of the voltages of the first capacitor C1 and the third capacitor C3, so it is Vm. Further, the third diode D3 and the fourth diode D4 are in a reverse bias voltage cutoff state.
第四時段:如圖3D所示,第一開關S1再度受控截止,第二開關S2則重新觸發導通,則跨在第二電容C2上的電壓(0.5Vm)與第四電容C4上的電壓(0.5Vm)形成串聯相加,故可使得第三二極體D3處於逆偏電壓截止、第四二極體D4則順偏電壓導通。此時第六電容C6之電壓為該第二電容C2與第四電容C4之電壓和,故為Vm。又第一、第二二極體D1、D2處於逆偏電壓截止狀態。The fourth period: as shown in FIG. 3D, the first switch S1 is again controlled to be turned off, and the second switch S2 is re-triggered, and the voltage across the second capacitor C2 (0.5 Vm) and the voltage on the fourth capacitor C4 (0.5 Vm) is formed in series, so that the third diode D3 is turned off in the reverse bias voltage, and the fourth diode D4 is turned on in the forward bias voltage. At this time, the voltage of the sixth capacitor C6 is the sum of the voltages of the second capacitor C2 and the fourth capacitor C4, so it is Vm. Further, the first and second diodes D1 and D2 are in a reverse bias voltage cutoff state.
經過上述四個工作階段,即第一、第二開關S1、S2各轉態兩次後,該第五電容C5及第六電容C6電壓各可獲得2倍第一電容C1、第二電容C2上的電壓,而該充磁電路20所提供之充磁輸出電壓Vo為第五電容C5與第六電容C6之電壓和,故該充磁輸出電壓Vo=2Vm,比起儲能電容Cd上的電壓Vm可得到升壓效果。After the above four working phases, that is, after the first and second switches S1 and S2 are rotated twice, the voltages of the fifth capacitor C5 and the sixth capacitor C6 are respectively obtained twice as long as the first capacitor C1 and the second capacitor C2. The voltage of the magnetizing output voltage Vo provided by the magnetizing circuit 20 is the sum of the voltages of the fifth capacitor C5 and the sixth capacitor C6. Therefore, the magnetizing output voltage Vo=2Vm is compared with the voltage on the storage capacitor Cd. Vm can get a boosting effect.
如圖4所示,當充磁輸出電壓Vo=2Vm建立後結束充電階段,轉而進入充磁階段。在充磁階段中,本發明設定以數kHz的高頻驅動信號控制該輸出開關S3開啟與關閉,該驅動信號的頻率是指相對於交流市電為高頻,頻率的選用取決於待充磁材料的特性,在同一週期中開啟與關閉的時間相同均為t1,此時充磁電路20之第五、第六電容C5、C6隨著該輸出開關S3的交替導通/截止開始放電。當輸出開關S3導通(ON)時,該第五、第六電容C5、C6開始放電,流過充磁軛30的充磁電流Iout隨著電容放電時間的增長而逐漸增大。基於充磁軛30其線圈為電感性,具有電流續流的特性,故可透過輸出開關S3之交替導通/截止控制,令充磁電流Iout以能量累積形式增加,逐漸提高至可對磁性材料進行磁充填的電流值。As shown in FIG. 4, when the magnetization output voltage Vo=2Vm is established, the charging phase is terminated, and then the magnetization phase is entered. In the magnetization phase, the present invention sets the output switch S3 to be turned on and off with a high frequency drive signal of several kHz. The frequency of the drive signal is a high frequency relative to the AC mains, and the frequency is selected depending on the material to be magnetized. The characteristics are the same as the time of turning on and off in the same cycle, and the fifth and sixth capacitors C5 and C6 of the magnetizing circuit 20 start to discharge according to the alternate on/off of the output switch S3. When the output switch S3 is turned ON, the fifth and sixth capacitors C5 and C6 start to discharge, and the magnetizing current Iout flowing through the magnetizing yoke 30 gradually increases as the capacitor discharge time increases. The coil yoke 30 is inductive and has the characteristics of current freewheeling, so that the alternating current on/off control of the output switch S3 can increase the magnetizing current Iout in the form of energy accumulation, and gradually increase the magnetic material. The current value of the magnetic filling.
請參考圖5~7所示,為直流電壓Vm由150伏特、200伏特、300伏特時之模擬測試波形圖,各圖之橫軸代表時間(t),該輸出開關S3以3kHz頻率的驅動訊號Vpulse高頻切換,電容C1、C2、C5、C6為1000uF,電容C3、C4選用470uF。由各圖中可看出該充磁電流Iout會隨著直流電壓Vm的增加而增大。輸出電壓Vo由於該第五、第六電容C5、C6持續階段性放電,使得充磁電流Iout以階梯狀累積爬升至最大值。如圖7所示,在直流電壓Vm為300伏的條件下,充磁輸出電壓Vo的峰值約為600伏特,充磁電流Iout的峰值已達400安培,該電流值已符合對磁性材料進行磁填充之使用。Please refer to FIG. 5 to FIG. 7 for the simulation test waveform diagram of the DC voltage Vm from 150 volts, 200 volts, and 300 volts. The horizontal axis of each graph represents time (t), and the output switch S3 is driven at a frequency of 3 kHz. Vpulse high frequency switching, capacitors C1, C2, C5, C6 are 1000uF, and capacitors C3 and C4 are 470uF. It can be seen from the respective figures that the magnetizing current Iout increases as the DC voltage Vm increases. The output voltage Vo continues to be periodically discharged due to the fifth and sixth capacitors C5 and C6, so that the magnetizing current Iout is climbed to a maximum value in a stepwise manner. As shown in Fig. 7, under the condition that the DC voltage Vm is 300 volts, the peak value of the magnetization output voltage Vo is about 600 volts, and the peak value of the magnetizing current Iout has reached 400 amps, which is in line with the magnetic material. Use of padding.
本發明係橋式整流電路10將交流市電C先整流為直流電壓Vm,其後再結合以功率晶體構成的開關S1~S3、二極體D1~D4與電容器C1~C6等,透過微處理器控制不同開關S1~S3的開、關運作與二極體D1~D4之順偏、逆偏電壓工作特性,使得電容C1~C6透過該等開關S1~S3與二極體D1~D4之導通與截止,以數kHz之速度變換得到適當之串並組合,進而將整流所得之直流電壓Vm以高頻方式升壓到所需之充磁電壓值Vo。The bridge type rectifier circuit 10 first rectifies the AC mains C to a DC voltage Vm, and then combines the switches S1~S3, the diodes D1~D4 and the capacitors C1~C6 formed by the power crystal, through the microprocessor. Controlling the opening and closing operations of the different switches S1~S3 and the forward and reverse bias voltage operating characteristics of the diodes D1~D4, so that the capacitors C1~C6 pass through the switches S1~S3 and the diodes D1~D4. At the end, the appropriate series is combined and combined at a speed of several kHz, and the rectified DC voltage Vm is boosted to a desired magnetization voltage value Vo in a high frequency manner.
相較於傳統的電容式充磁裝置,本發明至少具有如下優點:Compared with the conventional capacitive magnetizing device, the present invention has at least the following advantages:
1、本發明以功率電晶體構成之開關、二極體與電容器組成一充磁電路可取代傳統體積笨重的變壓器,該電路同樣達到電壓升壓之功能,並可利用較小的電路體積與重量滿足充磁需求。1. The invention comprises a switch composed of a power transistor, a diode and a capacitor, and a magnetizing circuit can replace the traditional bulky transformer. The circuit also has the function of voltage boosting, and can utilize a smaller circuit volume and weight. Meet the demand for magnetization.
2、本發明之充磁裝置不需使用供大電流通過之電感器,故本發明在充磁裝置中即使採用數kHz的高頻切換控制,也不會發生高頻控制後之大充磁電流可能遭遇之電感鐵心磁飽和問題。2. The magnetizing device of the present invention does not need to use an inductor for passing a large current, so the present invention does not generate a large magnetizing current after high frequency control even if a high frequency switching control of several kHz is used in the magnetizing device. The magnetic saturation of the inductor core may be encountered.
3、本發明捨棄傳統之高壓大電容組一次放電型之充磁方式(電容組典型值為耐壓1kV、10,000uF以上),利用高頻升壓控制使充磁電路僅需使用耐壓數百伏之相對小電容Cd及C1~C6作為充磁過程之能量儲存元件,例如圖4~圖7測試範例所用之電容Cd、C1、C2、C5、C6為1000uF,C3、C4為470uF,在充磁期間對電容以數kHz頻率之速度重複充放電,配合充磁軛線圈等效之電感續流特性設計得到大充磁電流。3. The present invention discards the conventional high-voltage large-capacity group one-discharge type magnetization mode (the typical value of the capacitor group is withstand voltage of 1kV and above 10,000uF), and the high-frequency boost control is used to make the magnetization circuit only need to withstand hundreds of volts. The relatively small capacitors Cd and C1~C6 are used as energy storage components for the magnetization process. For example, the capacitors Cd, C1, C2, C5, and C6 used in the test examples of FIG. 4 to FIG. 7 are 1000 uF, and C3 and C4 are 470 uF during magnetization. The capacitor is repeatedly charged and discharged at a frequency of several kHz, and a large magnetizing current is designed in accordance with the equivalent inductive freewheeling characteristic of the magnetizing yoke coil.
10‧‧‧整流電路
20‧‧‧充磁電路
30‧‧‧充磁軛
40‧‧‧控制電路
81‧‧‧低頻變壓器
82‧‧‧全橋整流電路
83‧‧‧充磁軛線圈10‧‧‧Rectifier circuit
20‧‧‧Magnetic circuit
30‧‧‧Magnetic yoke
40‧‧‧Control circuit
81‧‧‧Low frequency transformer
82‧‧‧Full bridge rectifier circuit
83‧‧‧Magnetic yoke coil
圖1:本發明高頻式充磁裝置電路方塊圖。 圖2:本發明高頻式充磁裝置詳細電路圖。 圖3A~圖3D:本發明高頻式充磁裝置產生充磁輸出電壓Vo之電路動作圖。 圖4:本發明輸出開關其驅動信號Vpulse及輸出電流Iout的波形圖。 圖5:本發明以150伏特直流電壓Vm進行模擬之測試波形圖。 圖6:本發明以200伏特直流電壓Vm進行模擬之測試波形圖。 圖7:本發明以300伏特直流電壓Vm進行模擬之測試波形圖。 圖8:傳統電容式充磁裝置之電路圖。Figure 1 is a block diagram of a circuit of a high frequency magnetizing device of the present invention. Figure 2 is a detailed circuit diagram of the high frequency magnetizing device of the present invention. 3A to 3D are circuit diagrams showing the circuit of the magnetizing output voltage Vo generated by the high frequency magnetizing device of the present invention. Fig. 4 is a waveform diagram of the drive signal Vpulse and the output current Iout of the output switch of the present invention. Figure 5: Test waveform diagram of the present invention simulated with a 150 volt DC voltage Vm. Figure 6: Test waveform diagram of the present invention simulated with a 200 volt DC voltage Vm. Figure 7: Test waveform diagram of the present invention simulated with a 300 volt DC voltage Vm. Figure 8: Circuit diagram of a conventional capacitive magnetization device.
10‧‧‧整流電路 10‧‧‧Rectifier circuit
20‧‧‧充磁電路 20‧‧‧Magnetic circuit
30‧‧‧充磁軛 30‧‧‧Magnetic yoke
40‧‧‧控制電路 40‧‧‧Control circuit
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