TW201627749A - Manufacturing method for laser reflective mask - Google Patents

Abstract

The present invention discloses a manufacturing method for a laser reflective mask. According to one aspect of this invention, the manufacturing method for the laser reflective mask includes: a step of forming a sacrificial film on a substrate, a step of forming a sacrificial film pattern as a sacrificial film groove is being formed by performing a patterning process on an area on the substrate designated to be a reflective area of the laser beams, a step of forming a reflective film on the sacrificial film groove and the sacrificial film pattern, a step of forming crackles on the sacrificial film pattern, and a step of forming a reflective film pattern using the crackles formed on the sacrificial film pattern to remove the sacrificial film pattern and the reflective film formed on the sacrificial film pattern. As such, this invention provides an easy-to-be-implemented manufacturing method for a laser reflective mask.

Description

Laser reflective mask manufacturing method

The present invention relates to a method of manufacturing a laser reflective mask for laser patterning or the like.

Patterning is a technique of etching a part of a thin film to form a pattern for use as an electrode wire or the like, and is widely applied to a semiconductor, a liquid crystal display (LCD), a solar cell, a light emitting diode, and a light emitting diode. (Light Emitting Diode, LED) and other manufacturing processes.

According to the conventional general patterning process, after a photoresist is coated on a substrate on which an etching layer is formed, an ultraviolet ray is irradiated through a mask having a desired pattern to perform an exposure process. The photoresist is then partially removed by a development process to form a pattern, the pattern of the photoresist is used as an etch mask, and the etch layer is etched using an etchant to form an etch layer pattern. The residual photoresist is removed after the etching layer pattern is formed.

However, the above-described patterning process is very complicated and requires a lot of work time and cost. In addition, the exposure and development processes using the above-described photoresist require a plurality of steps, and therefore, it is required to have various expensive equipments, and a large amount of chemicals are required.

In order to solve the above problem, a laser direct patterning (LDP) method in which an etching layer is directly patterned by a laser is now employed. In laser direct patterning, there is a mask in which a desired pattern is formed in a laser light source and After etching between the layers, a method of scanning the surface of the mask using a laser beam is used.

A mask for direct laser patterning and a method of fabricating the same are disclosed in U.S. Patent No. 4,923,772.

According to the U.S. patent, a sacrificial film pattern is formed by using a photoresist, and a dielectric layer composed of a first dielectric layer and a second dielectric layer having different refractive indices and having a lower height than the sacrificial film pattern is deposited. . Then, the sacrificial film pattern is removed by lift off, and the dielectric layer located at the upper portion thereof is also removed, leaving a dielectric layer deposited on a portion where the sacrificial film pattern is not formed. The remaining dielectric layer reflects the laser beam.

This U.S. patent teaches the formation of a dielectric pattern using a sacrificial film pattern and a height difference of the dielectric layer. However, since this U.S. patent grant uses a sacrificial film to dielectric gap, the thickness of the sacrificial film (photoresist) should be greater when the dielectric has a predetermined thickness (e.g., 2 to 5 μm). The greater the thickness of the sacrificial film, the more difficult it is to control the profile of the sacrificial film, so sub-US patents are not capable of implementing micropatterns.

A mask manufacturing method for laser direct patterning is disclosed in Korean Patent No. 10-09447550.

A mask manufacturing method disclosed in the Korean Patent Publication, comprising: a step of forming a sacrificial film of a metal material such as chromium (Cr) on a transparent substrate such as glass; and etching a region of the substrate predetermined to be a laser beam reflection region, a step of forming a sacrificial film pattern and a predetermined depth of the buried film by etching the sacrificial film and the substrate; and alternately depositing the first reflection having different reflectances in the upper portion of the substrate on which the sacrificial film pattern and the reflective film embedding groove are formed a film and a second reflective film until the reflective film is completely isolated from the groove; removing the sacrificial film pattern and the first reflective film and the second reflective film formed on the sacrificial film pattern to form a buried film embedded in the reflective film Morphological a step of reflecting the film pattern; and removing the sacrificial film pattern remaining on the substrate. In addition, the sacrificial film pattern and the first reflective film and the second reflective film formed on the sacrificial film pattern are laser lift off or chemical mechanical polishing (CMP) processes of irradiating the laser beam. Removed.

According to the mask manufacturing method of this Korean patent, a sacrificial film is formed using chromium (Cr), and compared with a photoresist, chromium is characterized in that it cannot be deposited to a large thickness. Therefore, this Korean patent can form a groove to a glass substrate, forming a gap with respect to the dielectric layer. However, this Korean patent grants a metal (chromium) sacrificial film pattern, so that the processes for re-forming the buried grooves on the glass substrate are complicated and difficult to manufacture.

In order to solve the above problems, an object of the present invention is to provide a method of manufacturing a laser reflective mask which is easy to manufacture.

Other objects of the present invention will be further clarified by the examples described below.

A method of fabricating a laser reflective mask according to an aspect of the invention includes the steps of: forming a sacrificial film on a substrate; patterning a region of the substrate predetermined to be a reflective region of the laser beam, forming a a step of forming a sacrificial film pattern while sacrificing the film groove; a step of forming a reflective film on the sacrificial film groove and the sacrificial film pattern; a step of forming a crack on the sacrificial film pattern; and using a crack formed on the sacrificial film pattern The step of removing the sacrificial film pattern and the reflective film formed on the sacrificial film pattern to form a reflective film pattern.

A method of fabricating a laser reflective mask according to an aspect of the present invention may include one or more of the following embodiments. For example, the sacrificial film pattern in which the crack is formed can be removed by high pressure pressing, ultrasonic vibration, or irradiation laser.

The sacrificial film can be formed of a photosensitive resin composition having high heat resistance. Also, the reflective film may be formed to be higher than the sacrificial film pattern.

A method of manufacturing a laser reflective mask according to another aspect of the present invention includes the steps of: forming a sacrificial film of a metal material on a substrate; and patterning a region of the substrate predetermined to be a reflective region of the laser beam a step of forming a sacrificial film pattern while forming a sacrificial film groove; a step of forming a plating pattern through the metal plating layer on the sacrificial film pattern; a step of forming a reflective film on the sacrificial film groove and the plating pattern; and utilizing The step of thickness difference between the plating pattern and the reflective film removes the reflective film formed on the plating pattern to form a reflective film pattern.

A method of fabricating a laser reflective mask according to another aspect of the present invention may include one or more of the following embodiments. For example, the sacrificial film pattern may be formed of any one of chromium, aluminum, or molybdenum.

The thickness of the reflective film may be formed to be lower than the plating pattern.

A method of manufacturing a laser reflective mask according to still another aspect of the present invention includes the steps of: forming a sacrificial film of a metal material on a substrate; and patterning a region of the substrate predetermined to be a reflective region of the laser beam a step of forming a sacrificial film pattern while forming a sacrificial film groove; a step of forming a porous plating pattern through the metal plating layer on the sacrificial film pattern; a step of forming a reflective film on the sacrificial film groove and the plating pattern; The step of removing the plating pattern and the reflective film formed on the plating pattern to form a reflective film pattern.

A method of fabricating a laser reflective mask according to still another aspect of the present invention may include one or more of the following embodiments. For example, the plating pattern may be formed of any one of a porous chromium plate, a micro porous chromium plate, or a microcrack chromium coating.

The plating pattern can be removed by a chemical method such as ultrasonic or pressurization or a chemical method such as an etching solution. Also, the plating pattern can be formed by electrochemical etching.

A method of manufacturing a laser reflective mask according to still another aspect of the present invention, comprising: forming a sacrificial film on a substrate; patterning a region of the substrate predetermined as a reflective region of the laser beam, forming a step of forming a sacrificial film pattern while sacrificing the film groove; a step of forming an organic pattern of the organic resin material on the sacrificial film pattern; a step of forming a crack by heat treatment on the organic pattern; and on the sacrificial film groove and the organic pattern a step of forming a reflective film; and a step of removing the organic pattern and the reflective film formed on the organic pattern by a crack formed on the organic pattern to form a reflective film pattern.

A method of fabricating a laser reflective mask according to still another aspect of the present invention may include one or more of the following embodiments. For example, the heat resistance of the organic resin may be smaller than that of the sacrificial film.

A method of manufacturing a laser reflective mask according to still another aspect of the present invention, comprising: forming a sacrificial film on a substrate; patterning a region of the substrate predetermined as a reflective region of the laser beam, forming a step of forming a sacrificial film pattern while sacrificing the film groove; a step of forming an organic film to embed the sacrificial film pattern; and removing the sacrificial film pattern and the organic film formed on the sacrificial film pattern to form an organic pattern; a step of forming a reflective film on the substrate on which the organic pattern is formed; and removing the organic pattern and forming A reflective film on the organic pattern to form a reflective film pattern.

The present invention can provide a method of manufacturing a laser reflective mask that is easy to manufacture.

110‧‧‧Substrate

112‧‧‧Through the area

120‧‧‧Sacrificial film

122‧‧‧sacrificial film pattern

124‧‧‧Sacrificial membrane tank

130‧‧‧Reflective film

132‧‧‧First reflective film

134‧‧‧second reflective film

136‧‧‧Reflective film pattern

138‧‧‧ crack

1 to 5 are cross-sectional views sequentially showing a method of manufacturing a laser reflection type mask according to a first embodiment of the present invention.

The invention is capable of various modifications and various modifications and However, it is only used to explain the technical solution of the present invention, and is not limited thereto; those skilled in the art should understand that the technical solutions described in the above embodiments may be modified, or some or all of the technologies may be Features are equivalently replaced. In the course of the description of the present invention, the detailed description of the technical subject matter of the present invention will be omitted when it is considered that the detailed description of the related art can be confused.

The terminology used in the description is for the purpose of describing the particular embodiments, If not otherwise defined, the singular expression should be understood to include the plural. Terms such as "including" or "having" are used to describe the presence of the described features, quantities, steps, operations, components, components, or combinations thereof, without precluding one or more other features, quantities, and steps. The existence or additional possibilities of work, components, components, or a combination thereof.

Further, the terms first and second may be used to describe various constituent elements, but the constituent elements are not limited to these terms. These terms are only used to distinguish one component from another.

The embodiments of the present invention will be described with reference to the drawings, in which the same or corresponding constituent elements are given the same reference numerals, and the repeated description is omitted.

1 to 5 are cross-sectional views sequentially showing a method of manufacturing a laser reflection type mask according to a first embodiment of the present invention.

A method of manufacturing a laser reflective mask according to a first embodiment of the present invention, characterized in that after depositing a reflective film 130 corresponding to a dielectric layer on a sacrificial film pattern 122 composed of an organic substance, on the sacrificial film pattern 122 A crack 138 is formed. The sacrificial film pattern 122 and the reflective film 130 located at the upper portion thereof can be easily removed by the crack 138 formed in the sacrificial film pattern 122.

FIG. 1 is a cross-sectional view showing a state in which the sacrificial film 120 is formed on the substrate 110.

Referring to FIG. 1, a sacrificial film 120 is deposited on the substrate 110. The sacrificial film 120 is formed of an organic substance such as a photoresist or an emulsion instead of a metal such as chromium.

The substrate 110 is formed of a material that can pass through a laser beam, and may be, for example, a glass substrate, a fused silica substrate, a quartz (Quartz) substrate, a synthetic quartz (Synthetic Quartz) substrate, or a CaF 2 substrate. In addition, an anti-reflective film (ARC) (not shown) may be additionally formed on the bottom surface of the substrate 110, that is, the surface on which the laser beam is incident, so that the passing region of the substrate 110 can be improved (refer to FIG. 5) 112) The passing rate of the laser beam at the location.

The sacrificial film 120 deposited on the substrate 110 may be formed using a resin such as a photoresist or an emulsion, and in particular, a photosensitive resin may be used instead of the existing metal. The photosensitive resin may be a diazo tree The resin, the azide resin, the ester resin, the acrylic resin, the polyamide resin or the polyester, etc., are not limited to the resin forming the sacrificial film 120.

The photosensitive resin forming the sacrificial film 120 may be a mixture of a mixed polymer resin of a polydecane resin, a photosensitive organic substance, and an organic solvent, and the photosensitive organic substance may be a Diazide group. In addition, the sacrificial film 120 may also be formed of a photosensitive paste.

The reflective film 130 is formed on the sacrificial film 120 by depositing a dielectric, and the high temperature (above 200 ° C) heat applied during the formation of the reflective film 130 may cause a problem that the sacrificial film 120 is peeled off after the reflective film 130 is deposited. In order to solve the above problem, the sacrificial film 120 can be formed using a photosensitive resin having high heat resistance. For example, the sacrificial film 120 can be developed by a Japanese physicochemical research so that fullerene is used as a catalyst, and can be formed by a photosensitive resin capable of withstanding a high temperature of 300 °C. Further, the photosensitive resin having high heat resistance can be a resin composition disclosed in Korean Patent No. 1320243 or No. 1202012.

In addition, the deposition temperature of the dielectric forming the reflective film 130 can be kept below 200 ° C, minimizing cracks or defects occurring on the sacrificial film 120 during the formation of the reflective film 130.

Further, the highly heat-resistant photosensitive resin has gas out-gasing characteristics of the exhaust gas at a high temperature, which may lower the bonding force of the substrate 110 and the reflective film 130 at a high temperature. Therefore, in order to prevent the highly heat-resistant photosensitive resin from releasing a gas at a high temperature, degassing or annealing treatment can be performed.

The thickness of the sacrificial film 120 need not be higher than the height of the dielectric reflective film 130 formed later, and the thickness of the sacrificial film 120 may be smaller than that of the reflective film 130. According to the prior art, the sacrificial film is higher than the dielectric reflective film, and the sacrificial film and the dielectric formed on the sacrificial film pass through the gap. Peeling, and according to the method of manufacturing the laser reflective mask of the first embodiment, since the height difference between the sacrificial film 120 and the reflective film 130 is not utilized, the thickness of the sacrificial film 120 can be arbitrarily formed.

FIG. 2 is a cross-sectional view showing the formation of the sacrificial film pattern 122 and the sacrificial film groove 124 by patterning the sacrificial film 120 shown in FIG. 1 .

Referring to FIG. 2, the sacrificial film 120 is partially removed to form the sacrificial film groove 124 and the sacrificial film pattern 122. The sacrificial film groove 124 is a portion where the sacrificial film 120 is removed, and corresponds to a portion of the laser reflective type mask that forms the reflective film pattern 136 that reflects the laser beam. Also, the sacrificial film pattern 122 is a residual portion of the sacrificial film 120, corresponding to the pass region 112 through which the laser beam passes in the laser reflective mask.

The sacrificial film 120 can be patterned by dry etching, wet etching, sand blasting, laser patterning, etc., and the sacrificial film patterning method is a conventional technique. Detailed descriptions are omitted.

Fig. 3 is a cross-sectional view showing the deposition of the reflective film 130 on the upper portion of the sacrificial film pattern 122 and the sacrificial film groove 124 in the state of Fig. 2.

Referring to FIG. 3, a reflective film 130 is formed on the upper portion of the sacrificial film pattern 122 and the sacrificial film groove 124 shown in FIG. The reflective film 130 formed may be higher than the sacrificial film pattern 122. The reflective film 130 deposited on the sacrificial film pattern 122 is removed together with the sacrificial film pattern 122. The reflective film 130 above the sacrificial film groove 124 remains as the reflective film pattern 136, and the remaining reflective film pattern 136 reflects the thunder. Beam.

The reflective film 130 may correspond to a dielectric layer, and may be formed by alternately depositing a plurality of layers of the first reflective film 132 and the second reflective film 134 having different reflectances. The first reflective film 132 may be a SiO ₂ film or a MgF ₂ film having a relatively low refractive index, and the second reflective film 134 may be a TiO ₂ film having a relatively higher refractive index than the first reflective film 132, an Al ₂ O ₃ film, and Ta _{2 .} An O ₅ film, a Cerium fluoride film, a zinc sulfide film, an AlF ₃ film, a Hafnium oxide film, a Zirconium oxide film, or the like. For example, the reflective film 130 may be formed by repeatedly depositing several layers to several tens of layers of a deposition structure such as a TiO ₂ film/SiO ₂ film, a Ta ₂ O ₅ film/SiO ₂ film, or the like, and may be deposited in the case of a TiO ₂ film/SiO ₂ film. case can withstand 5J / cm ² to 8J / cm ² energy laser beam, Ta ₂ O ₅ film / SiO ₂ film may be deposited to withstand the laser beam 10J / cm ² energy.

The reflective film 130 may use a first reflection film 132 and a second reflection film 134 of different types according to the wavelength of the laser beam for etching the etching layer, and may be formed to have a reflection of 90 to 100% on the irradiated laser beam. rate. In this case, the reflective film 130 reflects most of the laser beam and is therefore not damaged by the high energy laser beam.

The first reflective film 132 and the second reflective film 134 may be respectively subjected to evaporative deposition, ion beam assisted deposition, chemical vapor deposition (CVD), ion beam deposition (ion). Beam deposition, Molecular Beam Epitaxy (MBE), sputter deposition, Atomic Layer Deposition (ALD), electron beam (E-Beam) deposition, etc.

Fig. 4 is a cross-sectional view showing a state in which a crack is formed in the sacrificial film pattern 122 shown in Fig. 3.

Referring to FIG. 4, in order to remove the sacrificial film pattern 122 and the reflective film 130 located at the upper portion thereof, a crack 138 is formed on the sacrificial film pattern 122. The method of forming the crack 138 on the sacrificial film pattern 122 includes a heat treatment, a method of pressing the sacrificial film pattern 122 by high pressure, an ultrasonic vibration method, a method of irradiating a laser beam, and the like.

By forming the crack 138 on the sacrificial film pattern 122, the sacrificial film pattern 122 and the reflective film 130 formed on the upper portion thereof can be easily removed. The sacrificial film pattern 122 having the cracks 138 and the reflective film 130 formed on the upper portion thereof can be removed by a general lift off process such as heat treatment, pressurization, laser irradiation, or ultrasonic vibration.

Referring to FIG. 5, the sacrificial film pattern 122 and the reflective film 130 located at the upper portion thereof are removed by etching to form the reflective film pattern 136. The reflective film pattern 136 corresponds to a region in which the laser beam does not pass through in the laser reflective mask but is reflected.

110‧‧‧Substrate

112‧‧‧Through the area

136‧‧‧Reflective film pattern

Claims (4)

A laser reflective mask manufacturing method comprising: forming a sacrificial film on a substrate; patterning a region of the substrate predetermined as a reflective region of the laser beam to form a sacrificial film groove while forming a sacrificial film groove a step of forming a sacrificial film pattern; a step of forming a reflective film on the sacrificial film groove and the sacrificial film pattern; a step of forming a crack on the sacrificial film pattern; and removing the crack by using a crack formed on the sacrificial film pattern The sacrificial film pattern and the reflective film formed on the sacrificial film pattern to form a reflective film pattern. The laser reflective mask manufacturing method according to claim 1, wherein the sacrificial film pattern in which the crack is formed is removed by high pressure pressing, ultrasonic vibration or irradiation laser. The laser reflective mask manufacturing method according to claim 1, wherein the sacrificial film is formed of a photosensitive resin composition having high heat resistance. The laser reflective mask manufacturing method of claim 1, wherein the reflective film is formed higher than the sacrificial film pattern.