TW201625493A - Method for producing a blank of fluorine- and titanium-doped glass with a high silicic-acid content for use in EUV lithography and blank produced according to said method - Google Patents

Method for producing a blank of fluorine- and titanium-doped glass with a high silicic-acid content for use in EUV lithography and blank produced according to said method Download PDF

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TW201625493A
TW201625493A TW104129797A TW104129797A TW201625493A TW 201625493 A TW201625493 A TW 201625493A TW 104129797 A TW104129797 A TW 104129797A TW 104129797 A TW104129797 A TW 104129797A TW 201625493 A TW201625493 A TW 201625493A
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fluorine
soot body
titanium
content
doped
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TWI651277B (en
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史帝芬 歐克斯
克勞斯 貝克
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信越石英股份有限公司
赫里斯果斯克來斯有限兩合公司
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    • C03C3/04Glass compositions containing silica
    • C03C3/06Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/24Reflection masks; Preparation thereof
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    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/60Substrates
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    • C03B2201/075Hydroxyl ion (OH)
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    • C03B2201/08Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
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    • C03B2201/30Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
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Abstract

The present invention refers to a method for producing a silica glass blank co-doped with titanium and fluorine for use in EUV lithography, with an internal transmission of at least 60% in the wavelength range of 400 nm to 700 nm at a sample thickness of 10 mm, the titanium being present in the oxidation forms Ti3<SP>+</SP> and Ti<SP>4+</SP>, the method comprising the following steps: (a) producing a TiO2-SiO2 soot body by means of flame hydrolysis of silicon- and titanium-containing precursor substances, (b) fluorinating the soot body so as to form a fluorine-doped TiO2-SiO2 soot body, (c) treating the fluorine-doped TiO2-SiO2 soot body in a water vapor-containing atmosphere so as to form a conditioned soot body, and (d) vitrifying the conditioned soot body so as to form the blank of titanium-doped silica glass with a mean OH content in the range of 10 to 100 wt. ppm and with a mean fluorine content in the range of 2,500 to 10,000 wt. ppm. Also after the action of reducing atmosphere on the blank the OH groups introduced by the water vapor treatment show a prolonged action period in the sense of a depot for the internal oxidation of Ti<SP>3+</SP> ions into Ti<SP>4+</SP> ions, so that the ratio of Ti<SP>3+</SP>/Ti<SP>4+</SP> can be adjusted to a value ≤ 2 x 10<SP>-4</SP>.

Description

製造用於EUV微影術之高矽酸含量的氟與鈦摻雜玻璃底板的方法及由該方法製造之底板 Method for producing a fluorine and titanium doped glass substrate having a high tannic acid content for EUV lithography and a substrate manufactured by the method

本發明係關於一種製造用於EUV微影術之鈦摻雜玻璃底板之方法,該玻璃底板具有高矽酸含量且在樣本厚度為10mm下,於400nm至700nm之波長範圍的內透射為至少60%,且具有給定之氟含量。 The present invention relates to a method for fabricating a titanium-doped glass substrate for EUV lithography having a high tannic acid content and having an internal transmission of at least 60 in the wavelength range of 400 nm to 700 nm at a sample thickness of 10 mm. % with a given fluorine content.

此外,本發明係關於一種用於EUV微影術的鈦摻雜矽石玻璃之底板。 Furthermore, the present invention relates to a bottom plate of a titanium-doped vermiculite glass for EUV lithography.

在EUV微影術中,利用顯微微影投影裝置(microlithographic projection device)製造線寬小於50nm之高度集成結構。此處使用波長為常13nm之來自EUV範圍的輻射(極遠紫外線,亦稱為弱X射線輻射)。該等投影裝置配備有由具有高矽酸含量之鈦摻雜玻璃(下文亦稱於「TiO2-SiO2玻璃」或「Ti摻雜之矽石玻璃」)所構成且 配備有反射層系統之鏡元件。該等材料係以極低線性熱膨脹係數(簡稱為「CTE」;熱膨脹係數)著稱,熱膨脹係數可經由鈦的濃度而調整。標準氧化鈦濃度係介於6重量%與9重量%之間。 In EUV lithography, a highly integrated structure with a line width of less than 50 nm is fabricated using a microlithographic projection device. Radiation from the EUV range (extremely ultraviolet, also known as weak X-ray radiation) having a wavelength of usually 13 nm is used here. The projection apparatus is equipped with a titanium doped glass having a high tannic acid content (hereinafter also referred to as "TiO 2 -SiO 2 glass" or "Ti doped vermiculite glass") and is provided with a reflective layer system. Mirror element. These materials are known for their extremely low linear thermal expansion coefficient (referred to as "CTE"; thermal expansion coefficient), and the thermal expansion coefficient can be adjusted by the concentration of titanium. The standard titanium oxide concentration is between 6% and 9% by weight.

在由具有高矽酸含量之合成鈦摻雜玻璃所製成的底板之預定用途中,其上側配備有反射塗層。此種EUV鏡元件之最大(理論)反射率為約70%,因此至少30%之輻射能量被吸入該塗層中或該鏡基材的近表面層中,並轉換成熱。在鏡基材之體積中,此導致具有溫差之不均勻溫度分布,根據該文獻中給定的資訊,溫差可達50℃。 In the intended use of a base plate made of a synthetic titanium doped glass having a high tannic acid content, the upper side is provided with a reflective coating. The maximum (theoretical) reflectance of such EUV mirror elements is about 70%, so at least 30% of the radiant energy is drawn into the coating or into the near surface layer of the mirror substrate and converted to heat. In the volume of the mirror substrate, this results in an uneven temperature distribution with a temperature difference, which can be as much as 50 ° C according to the information given in the literature.

因此,若在使用期間在整個工作溫度的溫度範圍內鏡基材底板的玻璃之CTE為零,會希望變形儘可能小。然而,在摻雜Ti之矽石玻璃中,CTE為約零的溫度範圍實質上會非常窄。 Therefore, if the CTE of the glass of the substrate of the mirror substrate is zero during the temperature range of the entire working temperature during use, it is desirable that the deformation be as small as possible. However, in Ti-doped vermiculite glass, the temperature range in which CTE is about zero is substantially very narrow.

該玻璃之熱膨脹係數等於零的溫度在下文中亦將稱為跨零(zero crossing)溫度或TZC(跨零之溫度)。鈦濃度通常設定以使在介於20℃與45℃之間的溫度範圍獲得為零之CTE。具有比預定TZC較高或較低之溫度的鏡基材之體積區膨脹或收縮,因此,儘管TiO2-SiO2玻璃之整體低CTE,仍會發生對該鏡之成像品質有害的變形。 The temperature at which the coefficient of thermal expansion of the glass is equal to zero will also be referred to hereinafter as the zero crossing temperature or T ZC (temperature across zero). The titanium concentration is typically set such that a CTE of zero is obtained over a temperature range between 20 °C and 45 °C. The volume region of the mirror substrate having a higher or lower temperature than the predetermined T ZC expands or contracts, and thus, despite the overall low CTE of the TiO 2 -SiO 2 glass, deformation which is detrimental to the image quality of the mirror may occur.

此外,玻璃之虛擬溫度至關重要。虛擬溫度為代表「凍結」玻璃網狀結構之次序的狀態的玻璃性質。較高之TiO2-SiO2玻璃的虛擬溫度伴隨較低之玻璃結構次序的狀態以及與能量最有利結構排列的較大偏差。 In addition, the virtual temperature of the glass is crucial. The virtual temperature is a glass property that represents the state of the order of "freezing" the glass network structure. The higher the temperature of TiO 2 -SiO 2 glass virtual accompanying low state of order of the glass structure and a greater deviation of the energy of the most favorable arrangement structure.

虛擬溫度受到玻璃的熱經歷影響,尤其是受到最後冷卻程序影響。在最後冷卻程序中,不同條件下玻璃塊之近表面區必然比中央區優先,因此鏡基材底板之不同體積區已因其不同熱經歷而具有不同虛擬溫度,該虛擬溫度繼而與關於CTE曲線之對應不均勻區相關。此外,然而,因氟對於結構弛豫有影響,該虛擬溫度亦受氟的量影響。氟摻雜容許低虛擬溫度之調整,因此亦容許CTE曲線關於溫度具有較小斜率。 The virtual temperature is affected by the thermal experience of the glass, especially by the final cooling process. In the final cooling procedure, the near surface area of the glass block must be prioritized over the central area under different conditions, so the different volume areas of the mirror substrate bottom plate have different virtual temperatures due to their different thermal experiences, and the virtual temperature is followed by the CTE curve. Corresponding to the uneven area correlation. Furthermore, however, since the fluorine has an effect on structural relaxation, the virtual temperature is also affected by the amount of fluorine. Fluorine doping allows adjustment of the low virtual temperature and therefore also allows the CTE curve to have a small slope with respect to temperature.

Ti摻雜矽石玻璃係藉由從含有矽及鈦之前驅物質開始的火焰水解製造。首先,製造鈦摻雜之SiO2多孔煙灰體,將其玻璃化成緻密玻璃體。隨意地,煙灰體在玻璃化之前進行乾燥程序,例如藉由在含鹵素氣氛中處理,以減少羥基含量(OH基含量)。然而,以氧化鈦摻雜會因玻璃基質中之Ti3+離子大致高濃度而導致該玻璃呈棕色外觀或染色。用於該應用之成形體(下文亦稱為底板)為尺寸至高達約70×60×20cm3之大型深棕色板,必須針對該等板的光學性質及針對因製造程序所致的瑕疵或不均勻進行檢查。因預先假定在可見光譜範圍中之透明度的一般光學測量方法僅能有限度使用或完全無法應用,該玻璃之呈棕色外觀反而成為問題。 Ti-doped vermiculite glass is produced by flame hydrolysis starting from a precursor containing barium and titanium. First, a titanium-doped SiO 2 porous soot body is produced and vitrified into a dense glass body. Optionally, the soot body is subjected to a drying procedure prior to vitrification, for example by treatment in a halogen-containing atmosphere to reduce the hydroxyl content (OH group content). However, doping with titanium oxide results in a brown appearance or staining of the glass due to the substantially high concentration of Ti 3+ ions in the glass matrix. The shaped bodies for this application (hereinafter also referred to as bottom plates) are large dark brown plates up to a size of up to about 70 x 60 x 20 cm 3 , which must be tailored to the optical properties of the plates and to the defects or defects caused by the manufacturing process. Check evenly. The general optical measurement method that presupposes transparency in the visible spectral range can only be used with limited or no application at all, and the brown appearance of the glass becomes a problem.

該文獻已提出藉由氧化處理用於限制Ti3+離子之量而有利於Ti4+離子的各種解決方案。當在相當高羥基含量的情況下使用Ti摻雜矽石玻璃時,該等OH基能使所希望的將Ti3+氧化成Ti4+。此係,例如由Carson及Mauer在 "Optical Attenuation in Titania-Silica Glasses"(J. Non-Crystalline Solids,第11(1973)卷,第368-380頁)中關於Ti摻雜矽石玻璃的描述,其指出根據式2Ti3++2OH-→2Ti4++2O2-+H2之反應。 This document has proposed various solutions for the benefit of Ti 4+ ions by oxidizing treatment for limiting the amount of Ti 3+ ions. When Ti-doped vermiculite glass is used at a relatively high hydroxyl content, the OH groups can oxidize Ti 3+ to Ti 4+ as desired. This is, for example, a description of Ti-doped vermiculite glass by Carson and Mauer in "Optical Attenuation in Titania-Silica Glasses" (J. Non-Crystalline Solids, Vol. 11 (1973), pp. 368-380). It indicates the reaction according to the formula 2Ti 3+ +2OH - → 2Ti 4+ + 2O 2- + H 2 .

該製程於EP 2 428 488 A1中採用,特別是關於氧化程序及在退火期間氫向外擴散之最佳條件。EP 2 428 488 A1中所述之Ti摻雜矽石玻璃未經氟摻雜,其具有超過600wt.ppm之高OH含量以及相對低氫含量(低於2×1017個分子/cm3)。為了確保高OH含量,建議在沉積程序期間添加水蒸氣,於是描述兩階段沉積程序,其中TiO2-SiO2煙灰粒子先形成,彼等於隨後固結並玻璃化,以及描述一階段程序,其中煙灰粒子係立即玻璃化(所謂「直接石英」或「DQ法」)。Ti摻雜矽石玻璃中之Ti3+離子的量據稱低於3ppm,在340nm至840nm之波長範圍的內透射大於90%,但未提供關於樣本厚度的資訊。 This process is employed in EP 2 428 488 A1, in particular with regard to the oxidation procedure and the optimum conditions for the outward diffusion of hydrogen during annealing. The Ti-doped vermiculite glass described in EP 2 428 488 A1 is not fluorine doped, has a high OH content of more than 600 wt. ppm and a relatively low hydrogen content (less than 2 x 10 17 molecules/cm 3 ). In order to ensure a high OH content, it is recommended to add water vapor during the deposition procedure, thus describing a two-stage deposition procedure in which TiO 2 -SiO 2 soot particles are formed first, which is equivalent to subsequent consolidation and vitrification, and describes a one-stage procedure in which soot The particle system is immediately vitrified (so-called "direct quartz" or "DQ method"). The amount of Ti 3+ ions in the Ti-doped vermiculite glass is said to be less than 3 ppm, and the internal transmission in the wavelength range of 340 nm to 840 nm is greater than 90%, but no information on the thickness of the sample is provided.

WO 2004/089836 A1揭示在相對廣溫度範圍顯示非常平坦之熱膨脹係數斜率的具有氟摻雜之Ti摻雜矽石玻璃。首先,在空氣中於1200℃製備多孔TiO2-SiO2煙灰體,其牽涉OH含量先降低以及Ti3+離子之氧化。隨後,為了氟摻雜,該TiO2-SiO2煙灰體係曝於在氧中或在氦中具有10體積%之SiF4氣氛數小時。除了氟摻雜之外,該處理牽涉OH含量之進一步降低。為了防止煙灰體於玻璃化期間變深色或染色,於WO 2004/089836 A1中建議在氦下進行隨後玻璃化之前,該煙灰體應在玻璃化之前於氧氣 氛中在介於300℃與1300℃之溫度範圍下處理數小時。然後將氟與鈦摻雜矽石玻璃之玻璃體成形為底板且進行退火處理以設定虛擬溫度。在WO 2004/089836 A1無法發現有關Ti3+離子之量或有關深色染色或有關內透射的資訊。 WO 2004/089836 A1 discloses a fluorine-doped Ti-doped vermiculite glass which exhibits a very flat thermal expansion coefficient slope over a relatively wide temperature range. First, a porous TiO 2 -SiO 2 soot body was prepared at 1200 ° C in air, which involved a decrease in OH content and oxidation of Ti 3+ ions. Subsequently, to fluorine-doped, the TiO 2 -SiO 2 soot on the exposure system having an oxygen or 10% by volume of SiF 4 hours in an atmosphere of helium. In addition to fluorine doping, this treatment involves a further reduction in OH content. In order to prevent darkening or dyeing of the soot body during vitrification, it is proposed in WO 2004/089836 A1 that the soot body should be at 300 ° C and 1300 in an oxygen atmosphere prior to vitrification prior to subsequent vitrification. It is treated for several hours at a temperature range of °C. The glass body of fluorine and titanium doped vermiculite glass is then formed into a bottom plate and annealed to set a virtual temperature. No information on the amount of Ti 3+ ions or on dark dyeing or on internal transmission can be found in WO 2004/089836 A1.

WO2006/004169 A1再繼續WO2004/089836 A1之關於Ti3+的量之實例以及關於內透射的資訊。根據WO2006/004169 A1之方法亦提供在玻璃化(在氦下)之前以氟摻雜進行TiO2-SiO2煙灰體的氧處理。氟摻雜係在含有氧及氟的氣氛中進行。以此方式製造之Ti摻雜矽石玻璃含有10wt.ppm之OH基及12wt.ppm之Ti3+離子。氟含量分別為120wt.ppm以及6,300wt.ppm。在此相對高含量之Ti3+的情況下,在400nm至700nm之波長範圍中的內透射指定為超過80%,然而此係針對僅一毫米的玻璃厚度而言。轉換成具有10mm厚度之樣本,此對應於僅10%之內透射的值。 WO 2006/004169 A1 continues with an example of the amount of Ti 3+ and information about internal transmission in WO 2004/089836 A1. The method according to WO 2006/004169 A1 also provides an oxygen treatment of the TiO 2 -SiO 2 soot body with fluorine doping prior to vitrification (under the underarm). The fluorine doping is carried out in an atmosphere containing oxygen and fluorine. The Ti-doped vermiculite glass produced in this manner contains 10 wt. ppm of OH groups and 12 wt. ppm of Ti 3+ ions. The fluorine content was 120 wt. ppm and 6,300 wt. ppm, respectively. In the case of this relatively high content of Ti 3+ , the internal transmission in the wavelength range from 400 nm to 700 nm is specified to be more than 80%, however this is for a glass thickness of only one millimeter. Converted to a sample having a thickness of 10 mm, this corresponds to a value of transmission within only 10%.

根據WO 2004/089836 A1及WO2006/004169 A1之方法技術上非常複雜,且就10mm範圍之現實樣本厚度而言,無法產生可接受之充分高的內透射。 The method according to WO 2004/089836 A1 and WO 2006/004169 A1 is technically very complicated and, in terms of the actual sample thickness in the range of 10 mm, does not produce an sufficiently high internal transmission acceptable.

從US 2006/0179879 A1已知,在用於EUV微影術之TiO2-SiO2玻璃中,在操作過程中所獲得之隨溫度的CTE曲線除了鈦濃度的均勻分布以外,亦會受其他參數影響,尤其是受氟摻雜影響及受OH含量影響。氟亦可用作可用以將OH含量設為低於100ppm之乾燥試劑。反之,經由玻璃化期間之水蒸氣的作用獲致高達1500ppm之OH含 量。在根據US 2006/0179879 A1的特殊實施態樣中,氟摻雜之TiO2-SiO2煙灰體係利用含有矽、鈦及氟之前驅物質的火焰水解而獲得。在隨後程序步驟中,煙灰體係在含有水蒸氣之惰性氣氛中玻璃化或固結。此TiO2-SiO2玻璃之氟含量係在500wt.ppm至2000wt.ppm之範圍。未提供關於TiO2-SiO2玻璃中之Ti3+離子的量、關於OH含量及該氟摻雜之TiO2-SiO2玻璃在可見光波長範圍中的內透射之資訊。 It is known from US 2006/0179879 A1 that in TiO 2 -SiO 2 glass for EUV lithography, the CTE curve obtained with temperature during operation is subject to other parameters in addition to the uniform distribution of titanium concentration. The effect is especially affected by fluorine doping and by OH content. Fluorine can also be used as a dry reagent which can be used to set the OH content to less than 100 ppm. Conversely, an OH content of up to 1500 ppm is obtained via the action of water vapor during vitrification. In a particular embodiment according to US 2006/0179879 A1, a fluorine-doped TiO 2 -SiO 2 soot system is obtained by flame hydrolysis of a precursor material comprising cerium, titanium and fluorine. In a subsequent process step, the soot system is vitrified or consolidated in an inert atmosphere containing water vapor. The fluorine content of this TiO 2 -SiO 2 glass is in the range of 500 wt. ppm to 2000 wt. ppm. Information on the amount of Ti 3+ ions in the TiO 2 -SiO 2 glass, on the OH content, and the internal transmission of the fluorine-doped TiO 2 -SiO 2 glass in the visible wavelength range is not provided.

除了上述特殊實例之外,US 2006/0179879 A1亦在標題「煙灰形成後固結(Soot Formation Followed by Consolidation)」下大致討論根據所謂煙灰法製造石英玻璃。如此,在需要氟摻雜之情況下,該SiO2煙灰體可在較高溫度下進行隨後的玻璃化步驟之前,於約1000℃下進行以氦、氫、水蒸氣或摻雜氣體(諸如CF4)之處理。未提供關於以氦、氫或水蒸氣處理對於SiO2煙灰體或對於燒結之石英玻璃的影響。然而,必須假定,由於在玻璃化前之煙灰體的乾燥明顯地並非刻意的,高OH含量存在於煙灰體中,其會因含水蒸氣氣氛而更提高,且將導致玻璃化期間不想要的氣泡。 In addition to the specific examples described above, US 2006/0179879 A1 also discusses the manufacture of quartz glass according to the so-called soot method, under the heading "Soot Formation Followed by Consolidation". Thus, in the case where fluorine doping is required, the SiO 2 soot body can be subjected to helium, hydrogen, water vapor or a doping gas (such as CF) at about 1000 ° C before the subsequent vitrification step at a higher temperature. 4 ) Processing. The effect on treatment with hydrazine, hydrogen or steam for SiO 2 soot bodies or for sintered quartz glass is not provided. However, it must be assumed that since the drying of the soot body prior to vitrification is clearly not intentional, a high OH content is present in the soot body, which is increased by the aqueous vapor atmosphere and will result in unwanted bubbles during vitrification. .

將提及WO 2009/084171 A1、US 2010/0179047 A1、US 2014/0155246 A1及EP 2 377 826 A1作為關於具有氟共摻雜之TiO2-SiO2玻璃的另外先前技術公開案。 The mentioned WO 2009/084171 A1, US 2010/0179047 A1, US 2014/0155246 A1 and EP 2 377 826 A1 as fluorine co-doped with respect to the TiO 2 -SiO 2 Further prior art publications glass.

技術目的 Technical purpose

總之,應注意到,根據先前技術,Ti摻雜矽石玻璃中Ti3+離子減少而有利於Ti4+離子係藉由充分大量之OH基從而發生以氫擴散的內部氧化來確保,或在低OH基含量下,需要在玻璃化之前進行氧化處理,該處理需要高處理溫度以及特殊抗腐蝕爐,因此相當昂貴。 In summary, it should be noted that according to the prior art, the Ti 3+ ion in the Ti-doped vermiculite glass is reduced to facilitate the Ti 4+ ion to be ensured by the internal oxidation of hydrogen diffusion by a sufficiently large amount of OH groups, or At low OH group levels, oxidation treatment is required prior to vitrification, which requires high processing temperatures as well as special corrosion resistant furnaces and is therefore relatively expensive.

在經F共摻雜之TiO2-SiO2玻璃中,關於因高Ti3+離子所造成的棕色著色或染色問題尤其顯著,此係因為因氟之故實質上無OH基能再引發Ti3+氧化成Ti4+In the F-doped TiO 2 -SiO 2 glass, the problem of brown coloring or dyeing caused by high Ti 3+ ions is particularly remarkable because it is substantially free of OH groups due to fluorine and can induce Ti 3 again. + Oxidation to Ti 4+ .

此外,已發現雖然在玻璃化之前的已知氧處理可靠地增加氧之量,藉此發生一次有利於Ti4+離子之氧化,該手段在例如當經玻璃化係在還原氣氛(例如藉由施加以還原方式調整之氫氧焰)下成形時並非永久性的。此意指因氧化處理之故,氧僅能供將Ti3+氧化成Ti4+一次,因此在還原條件下,再次漸增形成Ti3+離子,此已知導致玻璃的深色外觀或染色。 Furthermore, it has been found that although the known oxygen treatment prior to vitrification reliably increases the amount of oxygen, it occurs once to facilitate oxidation of the Ti 4+ ions, for example by being vitrified in a reducing atmosphere (for example by It is not permanent when it is formed by applying a hydrogen-oxygen flame adjusted in a reducing manner. This means that due to the oxidation treatment, oxygen can only be used to oxidize Ti 3+ to Ti 4+ once, so under reducing conditions, it gradually increases to form Ti 3+ ions, which is known to cause dark appearance or dyeing of the glass. .

因此,本發明目的係表示經鈦及氟摻雜且具有高矽酸含量以及OH含量低於100wt.ppm之玻璃的便宜製造方法顯示於400nm至700nm之波長範圍下在10mm之樣本厚度的內透射為至少60%,其中亦在還原氣氛在該玻璃上作用之後,OH基顯示在用作Ti3+內部氧化Ti4+離子之貯藏所方面的延長作用期間。 Accordingly, the present invention is directed to an inexpensive manufacturing method for glass doped with titanium and fluorine and having a high tannic acid content and an OH content of less than 100 wt. ppm, showing an internal transmission of a sample thickness of 10 mm in a wavelength range of 400 nm to 700 nm. At least 60%, wherein after the reducing atmosphere is applied to the glass, the OH group is shown to be prolonged during use as a reservoir for Ti 3+ internal oxidized Ti 4+ ions.

此外,本發明目的係提供經鈦與氟共摻雜之矽石玻璃底板。 Further, it is an object of the present invention to provide a vermiculite glass substrate co-doped with titanium and fluorine.

發明之一般說明 General description of the invention

至於該方法,從上述類型之方法開始的該目的係根據具有下列方法步驟的本發明獲致:(a)利用含矽及含鈦之前驅物質的火焰水解製造TiO2-SiO2煙灰體,(b)將該煙灰體氟化以形成氟摻雜之TiO2-SiO2煙灰體,(c)在含水蒸氣之氣氛中處理該氟摻雜之TiO2-SiO2煙灰體以形成經調理之煙灰體,(d)將該經調理之煙灰體玻璃化以形成高矽酸含量,平均羥基含量在10至100wt.ppm之範圍且平均氟含量在2,500wt.ppm至10,000wt.ppm之範圍的鈦摻雜玻璃之底板。 With regard to this method, the object starting from the above-described method is obtained according to the invention having the following method steps: (a) TiO 2 -SiO 2 soot body is produced by flame hydrolysis of a ruthenium-containing and titanium-containing precursor substance, (b) The ash body is fluorinated to form a fluorine-doped TiO 2 -SiO 2 soot body, (c) the fluorine-doped TiO 2 -SiO 2 soot body is treated in an aqueous vapor atmosphere to form a conditioned soot body (d) vitrifying the conditioned soot body to form a high bismuth acid content, titanium having an average hydroxyl content in the range of 10 to 100 wt. ppm and an average fluorine content ranging from 2,500 wt. ppm to 10,000 wt. ppm. The bottom plate of the miscellaneous glass.

在根據藉由火焰水解之所謂「煙灰法」製造合成Ti摻雜矽石玻璃中,在形成TiO2-SiO2煙灰體時,在該火焰中藉由水解或氧化所製造的SiO2及TiO2粒子先沉積在沉積表面上(方法步驟(a))。作為根據本發明之「煙灰法」的取代方案,Ti摻雜矽石玻璃亦可根據其中沉積之SiO2及TiO2粒子係直接玻璃化,通常獲得在約450至1200wt.ppm之範圍的提高之OH含量的一階段「直接法」製造。然而,根據該直接法製造之Ti摻雜矽石玻璃並非本發明主旨。 In the production of a synthetic Ti-doped vermiculite glass according to a so-called "soot method" by flame hydrolysis, SiO 2 and TiO 2 produced by hydrolysis or oxidation in the flame are formed when a TiO 2 -SiO 2 soot body is formed. The particles are first deposited on the deposition surface (method step (a)). As an alternative to the "soot method" according to the present invention, the Ti-doped vermiculite glass can also be directly vitrified according to the SiO 2 and TiO 2 particles deposited therein, and generally obtained in the range of about 450 to 1200 wt. ppm. The first step of the OH content is "direct method". However, the Ti-doped vermiculite glass produced by this direct method is not the gist of the present invention.

在另一方法步驟(b)中,煙灰體係經氟摻雜,因此該經玻璃化底板中設定在2500wt.ppm至10,000wt.ppm範 圍中的氟含量。羥基係藉由氟化實質上移除。該狀態具有不再有羥基以供將Ti3+氧化成Ti4+以及預期從摻雜氟之TiO2-SiO2玻璃所製成的底板有強烈棕色著色或染色之缺點。 In a further method step (b), the soot system is doped with fluorine, so that the fluorine content in the range of 2500 wt. ppm to 10,000 wt. ppm is set in the vitrified bottom plate. The hydroxyl group is substantially removed by fluorination. This state has the disadvantage that there are no more hydroxyl groups for the oxidation of Ti 3+ to Ti 4+ and that the bottom plate made of fluorine-doped TiO 2 -SiO 2 glass is expected to have strong brown coloration or dyeing.

為了持續性防止或至少減少棕色染色,以方法步驟(c)進行TiO2-SiO2煙灰體之氟化以接著在含水蒸氣的氣氛中調理處理,藉此獲得具有足以將Ti3+氧化成Ti4+之羥基的量之經調理煙灰體。 In order to prevent or at least reduce brown dyeing, the fluorination of the TiO 2 -SiO 2 soot body is carried out in method step (c) followed by conditioning in an aqueous vapor atmosphere, whereby sufficient oxidation of Ti 3+ to Ti is obtained. The amount of hydroxyl groups of 4+ is adjusted to the soot body.

該經調理之煙灰體隨後在形成具有高矽酸含量且OH含量在10wt.ppm至100wt.ppm之範圍的鈦摻雜玻璃底板時係經玻璃化(方法步驟(d))。 The conditioned soot body is then vitrified in forming a titanium doped glass substrate having a high tannic acid content and an OH content in the range of 10 wt. ppm to 100 wt. ppm (method step (d)).

根據本發明之方法的中心想法在於在TiO2-SiO2煙灰體玻璃化之前藉由使用水蒸氣之氧化調理處理降低Ti3+離子的濃度而有利於Ti4+。該使用水蒸氣之調理處理係在玻璃化步驟之前進行,原因係羥基可容易併入之開放孔式煙灰體於此階段仍存在。羥基之併入係於此處進行,如此關於Ti3+內部氧化成Ti4+,彼等具有供在還原條件下進行之隨後方法步驟的貯藏所效果。在煙灰體內之羥基的特別均勻分布亦在該調理處理中獲得。該玻璃粒子中結合的氟配位基於此處實質上係維持著,因此根據本發明之方法產生摻雜氟且同時具有充分高OH含量之TiO2-SiO2底板以確保Ti3+氧化成Ti4+The central idea of the method according to the invention is to facilitate Ti 4+ by reducing the concentration of Ti 3+ ions by oxidation conditioning treatment using water vapor prior to vitrification of the TiO 2 -SiO 2 soot body. The conditioning treatment using water vapor is carried out prior to the vitrification step, since open-cell soot bodies in which the hydroxyl groups can be easily incorporated remain at this stage. The incorporation of hydroxyl groups is carried out here so that the internal oxidation of Ti 3+ to Ti 4+ has the effect of storage for subsequent process steps under reducing conditions. A particularly uniform distribution of hydroxyl groups in the soot body is also obtained in this conditioning treatment. The fluorine coordination in the glass particles is substantially maintained here, so that the TiO 2 -SiO 2 substrate which is doped with fluorine and at the same time has a sufficiently high OH content is produced according to the method of the invention to ensure the oxidation of Ti 3+ to Ti 4+ .

因調理處理之故,OH基係併入煙灰體中作為貯藏所,因此彼等可供內部氧化不只一次,而且在隨後方法步 驟中施加還原條件之後亦有效,在持續數天的相對短之溫度處理期間之重新內部氧化方面,視該底板之體積而定,係在介於600℃與1000℃之間的範圍,通常在空氣或在真空下進行,其繼而導致Ti3+離子之量最小化。 Due to the conditioning treatment, the OH group is incorporated into the soot body as a storage, so they are available for internal oxidation more than once, and are also effective after applying reducing conditions in subsequent method steps, at relatively short temperatures lasting several days. Re-indoor oxidation during processing, depending on the volume of the substrate, is in the range between 600 ° C and 1000 ° C, usually in air or under vacuum, which in turn minimizes the amount of Ti 3+ ions .

待根據本發明方法製造之Ti摻雜矽石玻璃含有在6重量%至12重量%之範圍的二氧化鈦,其對應於3.6重量%至7.2重量%之鈦含量。在TiO2-SiO2煙灰體中,鈦係至少部分以氧化形式Ti3+存在。若可能,希望將所有Ti3+離子均轉化成Ti4+離子的狀態,因此因Ti3+離子之故,在400nm至1000nm波長範圍中沒有不適宜的吸收,而該Ti摻雜矽石玻璃從而顯示此波長範圍中的最大透明度。由於因氟化摻雜之故,該煙灰體不具OH基或僅有少量(<10wt.ppm)之OH基,此等幾乎對於Ti3+氧化成Ti4+無任何助益。作為氧化處理試劑,使用含水蒸氣之氣氛的調理處理根據本發明係在玻璃化步驟之前進行。該開放孔式煙灰體亦在相對低溫下與水蒸氣反應,以使Ti3+離子轉化成Ti4+離子。OH基係作為Si-OH併入玻璃網狀結構。OH基在隨後之方法步驟中於還原氣氛中處理(諸如於石墨爐中成形)之後仍可供Ti3+內部氧化成Ti4+The Ti-doped vermiculite glass to be produced according to the process of the invention contains titanium dioxide in the range of from 6% by weight to 12% by weight, which corresponds to a titanium content of from 3.6% by weight to 7.2% by weight. In the TiO 2 -SiO 2 soot body, at least partially oxidized form in the presence of titanium Ti 3+. If possible, it is desirable to convert all Ti 3+ ions into Ti 4+ ions, so there is no unsuitable absorption in the wavelength range of 400 nm to 1000 nm due to Ti 3+ ions, and the Ti doped vermiculite glass This shows the maximum transparency in this wavelength range. Since the soot body does not have an OH group or only a small amount (<10 wt. ppm) of OH groups due to fluorination doping, this has almost no benefit for the oxidation of Ti 3+ to Ti 4+ . As the oxidizing treatment agent, conditioning treatment using an atmosphere containing water vapor is carried out according to the present invention before the vitrification step. The open-cell soot body also reacts with water vapor at relatively low temperatures to convert Ti 3+ ions into Ti 4+ ions. The OH group is incorporated as a Si-OH into the glass network structure. The OH groups are still available for internal oxidation of Ti 3+ to Ti 4+ after subsequent treatment in a reducing atmosphere (such as in a graphite furnace).

當水蒸氣係如先前技術之情況僅在玻璃化期間使用時,其效果相當小,且對於OH基與Ti3+離子的反應不規則,使其內表面及外表面逐漸收縮,因而使來自水蒸氣之OH基穿透及反應受阻。相當可預期的是,水蒸氣導致玻璃中形成氣泡,此對於從具有高矽酸含量之鈦摻雜玻璃製 造底板的方法而言不可接受的。 When water vapor is used only during vitrification as in the prior art, the effect is rather small, and the reaction between the OH group and the Ti 3+ ion is irregular, causing the inner and outer surfaces to gradually shrink, thereby allowing water from the water. The OH group penetration of the vapor and the reaction are hindered. Quite unexpectedly, water vapor causes bubbles to form in the glass, which is unacceptable for a method of making a substrate from titanium doped glass having a high tannic acid content.

相較於在氧氣氛中之TiO2-SiO2煙灰體處理,從先前技術習知,使用水蒸氣的調理處理在技術方面不是非常複雜,且在根據本發明之方法相當有用。利用本發明之方法,可在亦用於乾燥及玻璃化煙灰體的玻璃或陶瓷爐中於真空及/或於惰性氣體中進行該調理處理。根據本發明之方法因而特別有經濟效益。此外,有利的是將OH含量設在介於10wt.ppm與100wt.ppm之間,原因係此導致特別高均勻度之CTE及虛擬溫度。在OH含量超過100ppm時,OH基之分布因而不規則且在特別高OH含量下甚至可預期於玻璃中之氣泡形成。 In an oxygen atmosphere compared to the TiO 2 -SiO 2 soot-processing, from conventional prior art, the use of steam conditioning process technology is not very complicated, and very useful in the process according to the present invention. With the method of the present invention, the conditioning treatment can be carried out in a vacuum or/or in an inert gas in a glass or ceramic furnace which is also used for drying and vitrifying the soot body. The method according to the invention is thus particularly economical. Furthermore, it is advantageous to set the OH content between 10 wt. ppm and 100 wt. ppm, which results in a particularly high uniformity of CTE and virtual temperature. When the OH content exceeds 100 ppm, the distribution of the OH group is thus irregular and even at a particularly high OH content, bubble formation in the glass can be expected.

而且相較於如DE 10 2013 108 885 B2中所揭示亦產生所希望之Ti3+氧化成Ti4+的使用氮氧化物之調理處理,使用水蒸氣之本發明方法應較佳,原因係大部分氮氧化物有毒性且對環境相當有害,此外就有效率使用而言,需要比水蒸氣更高之溫度。水蒸氣具有可以大量工業規模以高純度取得而且無害的特別優點。 Furthermore, the method of the invention using water vapor should be preferred over the conditioning treatment using nitrogen oxides which produce the desired Ti 3+ oxidation to Ti 4+ as disclosed in DE 10 2013 108 885 B2. Some nitrogen oxides are toxic and quite harmful to the environment, and in addition to efficiency, they require a higher temperature than water vapor. Water vapor has the particular advantage that it can be obtained in high purity on a large industrial scale and is harmless.

當水蒸氣分解時,形成已在相對低溫下與Ti3+離子反應的反應性OH基。Ti3+離子與水蒸氣之反應係根據以下反應式(1)進行且釋放水蒸氣(H2):(1)2 Ti3++H2O→2 Ti4++O2-+H2 When water vapor decomposes, a reactive OH group that has reacted with Ti 3+ ions at a relatively low temperature is formed. The reaction of Ti 3+ ions with water vapor is carried out according to the following reaction formula (1) and releases water vapor (H 2 ): (1) 2 Ti 3+ + H 2 O → 2 Ti 4+ + O 2- + H 2

以使用水蒸氣調理處理而導入經氟及鈦摻雜之矽石玻璃的OH基促使Ti3+離子內部氧化Ti4+離子不只一次,而是若在高溫下還原氣氛作用於經玻璃化之底板上且使該底 板之內透射惡化的Ti3+離子於此步驟再次形成時亦可供重新內部氧化(貯藏所效果)。 Introducing the OH group of the fluorine and titanium doped vermiculite glass by steam conditioning treatment causes the Ti 3+ ion to internally oxidize the Ti 4+ ion more than once, but if the reducing atmosphere acts on the vitrified bottom plate at a high temperature Ti 3+ ions which are deteriorated in transmission in the bottom plate are also available for re-internal oxidation (storage effect) when formed in this step again.

因此,結果此狀態可用於當該底板係在根據方法步驟(d)之玻璃化之後在還原氣氛中進行處理時,且Ti3+/Ti4+比係隨著在400nm至700nm之波長範圍中的內透射降低而提高,隨後在介於600℃與1000℃之範圍的溫度下對該底板進行退火處理以逆轉內透射之降低。還原氣氛之影響係例如在底板於石墨模中之成形期間觀察到,且因Ti4+離子還原成Ti3+離子而導致該底板的棕色染色。棕色染色可藉由退火處理,例如在空氣中或在真空中,在介於600℃與1000℃之範圍的溫度下之退火處理而再次大部分消除,原因係併入該玻璃中之OH基可供Ti3+之重新內部氧化,從而使Ti3+/Ti4+比設為2×10-4。此退火處理不涉及氣體在底板上之作用,而是涉及根據式(1)作為重新內部氧化之反應產物的氫之外向擴散。 Thus, the results can be used in this state, when the base plate processing line after the vitrification according to method step (d) in a reducing atmosphere of, and Ti 3+ / Ti 4+ with the ratio based on the wavelength range of 400nm to 700nm The internal transmission is reduced and increased, and then the substrate is annealed at a temperature ranging from 600 ° C to 1000 ° C to reverse the decrease in internal transmission. The effect of the reducing atmosphere is observed, for example, during the formation of the bottom plate in the graphite mold, and the brown coloration of the bottom plate is caused by the reduction of Ti 4+ ions into Ti 3+ ions. Brown dyeing can be largely eliminated again by annealing, for example in air or in a vacuum, at an annealing temperature between 600 ° C and 1000 ° C, because the OH groups incorporated into the glass can be again for internal oxidation of Ti 3+, so that the Ti 3+ / Ti 4+ ratio set 2 × 10 -4 . This annealing treatment does not involve the action of gas on the bottom plate, but involves outward diffusion of hydrogen as a reaction product of re-internal oxidation according to formula (1).

此外,其繼而可用於當使用水蒸氣之調理處理係在100℃至1100℃之範圍,較佳係在500℃至1000℃之範圍的處理溫度下進行且持續一(1)小時至40小時期間時。 Furthermore, it can in turn be used when the conditioning treatment using steam is carried out at a temperature in the range of from 100 ° C to 1100 ° C, preferably in the range of from 500 ° C to 1000 ° C for a period of one (1) to 40 hours. Time.

由於該調理處理已在100℃之溫度下進行,Ti3+離子之氧化可能消耗相對少量的能量。因此,此僅需要使用相當簡單設計的爐,且此處理階段可容易地重複進行。在低於約1100℃之溫度,煙灰體的多孔結構保持,因此確保氣態處理試劑可藉由擴散穿透該煙灰體且與分布在該玻璃網狀結構中的Ti3+離子均勻反應。在介於100℃與500℃ 之範圍的相對低溫下,水蒸氣對煙灰體的滲入需要相應較長的處理期間,直到發生所希望的與Ti3+離子之氧化反應,且來自水蒸氣的羥基累積在個別煙灰粒子表面上。視處理溫度而定,處理期間亦取決於煙灰體之體積。結果已發現至少一小時的最小處理期間適於確保水蒸氣有效率滲入煙灰體。從而獲致處理氣體實質上均勻分布在該多孔煙灰體內。水蒸氣可利用惰性載體氣流引入該煙灰體。 Since the conditioning treatment has been carried out at a temperature of 100 ° C, the oxidation of Ti 3+ ions may consume a relatively small amount of energy. Therefore, this only requires the use of a furnace of a rather simple design, and this processing stage can be easily repeated. At temperatures below about 1100 ° C, the porous structure of the soot body remains, thus ensuring that the gaseous treatment agent can diffuse through the soot body and react uniformly with the Ti 3+ ions distributed in the glass network structure. At relatively low temperatures ranging from 100 ° C to 500 ° C, the infiltration of water vapor into the soot body requires a relatively long treatment period until the desired oxidation reaction with Ti 3+ ions occurs and the hydroxyl groups from the water vapor Accumulated on the surface of individual soot particles. Depending on the processing temperature, the processing period also depends on the volume of the soot body. As a result, it has been found that a minimum treatment period of at least one hour is suitable for ensuring efficient infiltration of water vapor into the soot body. Thereby, the treatment gas is substantially uniformly distributed in the porous soot body. Water vapor can be introduced into the soot body using an inert carrier gas stream.

有利地,在調理處理期間於惰性氣體中之水蒸氣的量為0.05至50體積%,較佳為1至20體積%。 Advantageously, the amount of water vapor in the inert gas during the conditioning treatment is from 0.05 to 50% by volume, preferably from 1 to 20% by volume.

若水蒸氣分率低於0.05體積%,氧化效果低,且若水蒸氣分率高於50體積%,會在煙灰體上形成表面水,此原則上是無害的,但必須在玻璃化之前再次予以移除。 If the water vapor fraction is less than 0.05% by volume, the oxidation effect is low, and if the water vapor fraction is higher than 50% by volume, surface water is formed on the soot body, which is harmless in principle, but must be moved again before vitrification. except.

結果發現在TiO2-SiO2煙灰體的製造之後以及在根據方法步驟(b)氟化之前進行乾燥是有用的,產生低於10wt.ppm之平均OH含量。藉由該脫水處理,累積在煙灰體中之水被移除,此容許在隨後氟化步驟中之氟的特別均勻分布。乾燥可在惰性氣體、乾燥空氣中或在真空下,在介於700℃至1100℃之溫度範圍下以純萃熱方式進行;或者,使用乾燥試劑(諸如氯)亦為標準做法。該乾燥步驟有利於將OH含量減少至低於10wt.ppm。在該乾燥步驟之後,該TiO2-SiO2煙灰體係經氟摻雜,造成進一步乾燥效果。因此,該煙灰體之OH含量低於1wt.ppm,其係在涉及20ppm至30ppm之高Ti3+離子含量的狀態下。若此種煙灰體在未進一步處理的情況下玻璃化,底板顯示強烈的深 色染色。 The results showed that after fluorination and prior to producing TiO 2 -SiO 2 soot body according to method step (b) is useful for drying, to produce an OH content lower than the average of 10wt.ppm. By this dehydration treatment, the water accumulated in the soot body is removed, which allows a particularly uniform distribution of fluorine in the subsequent fluorination step. Drying can be carried out in a purely hot manner in an inert gas, dry air or under vacuum at temperatures ranging from 700 ° C to 1100 ° C; alternatively, the use of dry reagents such as chlorine is also standard practice. This drying step facilitates reducing the OH content to less than 10 wt. ppm. After this drying step, the system TiO 2 -SiO 2 soot doped with fluorine, resulting in a further drying effect. Therefore, the soot body has an OH content of less than 1 wt. ppm, which is in a state involving a high Ti 3 + ion content of 20 ppm to 30 ppm. If the soot body is vitrified without further treatment, the bottom plate shows intense dark dyeing.

氟對於矽石玻璃之結構弛豫有影響,因此Ti摻雜矽石玻璃之作為「凍結」玻璃網狀結構的次序之狀態的度量之虛擬溫度可降低,且溫度範圍可藉由為零之熱膨脹係數而擴大。此係例如從Journal of Applied Physics(第91(8)卷,2002年4月號,第4886-4890頁)習知。視處理期間及溫度而定,在底板中設定介於2,500wt.ppm與10,000wt.ppm之間,較佳係介於5,000wt.ppm與10,000wt.ppm之間的氟濃度。 Fluorine has an effect on the structural relaxation of vermiculite glass, so the virtual temperature of the state of the order of the Ti-doped vermiculite glass as a "frozen" glass network structure can be reduced, and the temperature range can be expanded by zero thermal expansion. The coefficient is expanded. This is known, for example, from Journal of Applied Physics (Vol. 91 (8), April 2002, pages 4886-4890). Depending on the processing and temperature, a concentration of fluorine between 2,500 wt. ppm and 10,000 wt. ppm, preferably between 5,000 wt. ppm and 10,000 wt. ppm, is set in the bottom plate.

本發明另一有利構造在於在含氟氣氛中根據方法步驟(b)進行TiO2-SiO2煙灰體之氟處理,該含氟氣氛較佳含有2體積%至100體積%的SiF4。原則上,可使用純氟氣體(F2)或SiHF3或SiH2F2代替SiF4Another advantageous configuration of the invention consists in carrying out a fluorine treatment of the TiO 2 -SiO 2 soot body according to process step (b) in a fluorine-containing atmosphere, which preferably contains from 2% by volume to 100% by volume of SiF 4 . In principle, the use of pure fluorine gas (F 2) or SiHF 3 or SiH 2 F 2 instead of SiF 4.

因含碳之氟化氣體(諸如CHF3、CF4、C2F6或C3F8)的還原作用(此會支持不想要的Ti3+離子形成)之故,使用該等氟化氣體相當不利。 The use of such fluorinated gases due to the reduction of carbon-containing fluorinated gases such as CHF 3 , CF 4 , C 2 F 6 or C 3 F 8 , which would support the formation of unwanted Ti 3+ ions Quite disadvantageous.

此外,當根據方法步驟(b)之氟化係在700℃至不超過1000℃的溫度範圍中進行時是有利的。藉由在該溫度範圍中之氟化,該多孔煙灰體對含氟處理氣體而言容易滲透,藉此確保有將氟有效率併入玻璃網狀結構。 Furthermore, it is advantageous when the fluorination according to process step (b) is carried out in a temperature range of from 700 ° C to not more than 1000 ° C. By fluorination in this temperature range, the porous soot body is easily permeable to the fluorine-containing process gas, thereby ensuring efficient incorporation of fluorine into the glass network structure.

就在20℃至50℃之溫度範圍的特別平坦之為零的熱膨脹係數曲線而言,氟摻雜之TiO2-SiO2底板有利地具有在2,500至10,000wt.ppm範圍的平均氟含量。 The fluorine-doped TiO 2 -SiO 2 substrate advantageously has an average fluorine content in the range of 2,500 to 10,000 wt. ppm with respect to a particularly flat zero coefficient of thermal expansion coefficient in the temperature range of 20 ° C to 50 ° C.

至於由具有高矽酸含量之Ti摻雜玻璃所構成的底 板,獲致從上述類型之底板開始的上述目的,其中該底板係根據下列方法步驟製造:(a)利用含矽及含鈦之前驅物質的火焰水解製造TiO2-SiO2煙灰體,(b)將該煙灰體氟化以形成氟摻雜之TiO2-SiO2煙灰體,(c)在含水蒸氣之氣氛中處理該氟摻雜之TiO2-SiO2煙灰體以形成經調理之煙灰體,及(d)將該經調理之煙灰體玻璃化以形成高矽酸含量之鈦摻雜玻璃的底板,且其係以下列著稱:平均氟含量在2,500wt.ppm至10,000wt.ppm之範圍,平均OH含量在10至100wt.ppm之範圍,且平均TiO2含量在6重量%至12重量%之範圍,其中鈦係以Ti3+及Ti4+之氧化形式存在,且Ti3+/Ti4+之比係調整至2×10-4之值。 With regard to a substrate composed of Ti-doped glass having a high tannic acid content, the above object is attained from a substrate of the above type, wherein the substrate is produced according to the following method steps: (a) using a ruthenium-containing and titanium-containing precursor material The flame is hydrolyzed to produce a TiO 2 -SiO 2 soot body, (b) the soot body is fluorinated to form a fluorine-doped TiO 2 -SiO 2 soot body, and (c) the fluorine doped body is treated in an aqueous vapor atmosphere. a TiO 2 -SiO 2 soot body to form a conditioned soot body, and (d) a glass substrate of the conditioned soot body to form a high tannic acid content titanium doped glass, which is known by the following: The fluorine content is in the range of 2,500 wt. ppm to 10,000 wt. ppm, the average OH content is in the range of 10 to 100 wt. ppm, and the average TiO 2 content is in the range of 6 to 12 wt%, wherein the titanium is Ti 3+ And the oxidized form of Ti 4+ exists, and the ratio of Ti 3+ /Ti 4+ is adjusted to 2 × 10 -4 value.

因Ti3+離子少量之故,根據本發明之底板就厚度為10mm之樣本而言在400nm至700nm之波長範圍顯示超過60%的高透明度。因而可能無困難地使用標準光學測量方法檢查該底板。 Due to the small amount of Ti 3+ ions, the substrate according to the present invention exhibits a high transparency of more than 60% in the wavelength range of 400 nm to 700 nm in terms of a sample having a thickness of 10 mm. It is thus possible to inspect the bottom plate without difficulty using standard optical measurement methods.

Ti3+之濃度可利用電子自旋共振測量(如在Carson and Mauer於"Optical Attenuation In Titania-Silica Glasses"(J.Non-Crystalline Solids,第11卷(1973),第368-380頁之發表)測定。 The concentration of Ti 3+ can be measured by electron spin resonance (as published by Carson and Mauer in "Optical Attenuation In Titania-Silica Glasses" (J. Non-Crystalline Solids, Vol. 11 (1973), pp. 368-380). ) Determination.

此外,Ti摻雜矽石玻璃之底板係經氟摻雜。就在20℃至50℃之溫度範圍的特別平坦之為零的熱膨脹係數曲線而言,氟含量係在5,000wt.ppm至10,000wt.ppm之範圍。 In addition, the bottom plate of the Ti-doped vermiculite glass is doped with fluorine. The fluorine content is in the range of 5,000 wt. ppm to 10,000 wt. ppm in terms of a particularly flat zero coefficient of thermal expansion coefficient in the temperature range of 20 ° C to 50 ° C.

平均氟濃度通常係在濕式化學方法中測定。將根據本 發明之底板的測量樣本先溶解於含水NaOH溶液。利用對氟敏感之電極,藉由測量所溶解之測量樣本的電動勢獲得F濃度。 The average fluorine concentration is usually determined in a wet chemical method. Will be based on this The measured sample of the bottom plate of the invention was first dissolved in an aqueous NaOH solution. The F concentration is obtained by measuring the electromotive force of the dissolved measurement sample using an electrode sensitive to fluorine.

平均羥基含量(OH含量)依照根據D.M.Dodd等人("Optical Determinations of OH in Fused Silica",(1966),第3911頁)之方法的IR吸收測量。 The average hydroxyl content (OH content) is measured in accordance with the IR absorption according to the method of D. M. Dodd et al. ("Optical Determinations of OH in Fused Silica", (1966), p. 3911).

此外,根據本發明方法所製造之底板顯示在20℃至40℃之溫度範圍中具有小斜率的熱膨脹係數CTE之非常有利進展。以微商dCTE/dt表示之CTE斜率係低於1.0ppb/K2。此外,此種根據本發明方法從經氟及鈦摻雜之矽石玻璃製造的底板係以特別高之摻雜劑分布均勻度著稱。此使在光學使用區(亦稱為「CA區」(通光孔徑))之CTE局部曲線最佳化。 Furthermore, the substrate produced according to the method of the invention shows a very advantageous progression of the coefficient of thermal expansion CTE with a small slope in the temperature range from 20 °C to 40 °C. The CTE slope expressed as the derivative quotient dCTE/dt is less than 1.0 ppb/K 2 . Furthermore, such a substrate made from fluorine and titanium doped vermiculite according to the method of the invention is distinguished by a particularly high dopant distribution uniformity. This optimizes the CTE local curve in the optical use zone (also known as the "CA zone" (pass light aperture)).

在根據本發明所製造之底板中,額外偵測由氟摻雜所促成的相對低虛擬溫度。 In the substrate fabricated in accordance with the present invention, a relatively low virtual temperature contributed by fluorine doping is additionally detected.

根據本發明所製造之底板最適用於EUV微影術用途。亦因其在可見光譜範圍中之透明度緣故,在進一步處理步驟之前可能進行最佳檢查,以例如獲得鏡基材。因藉由水蒸氣處理併入之OH基的貯藏所效果,於在還原氣氛中之處理步驟重複之後亦實質上維持在可見光譜範圍中之透明度,或相較於初始值,藉由在空氣或在真空下在介於600℃與1000℃之間的範圍中退火處理之後特別加強還原之後可重建或甚至超越。 The base plate made in accordance with the present invention is most suitable for EUV lithography applications. Also due to its transparency in the visible spectral range, an optimal inspection may be performed prior to further processing steps, for example to obtain a mirror substrate. Due to the storage effect of the OH group incorporated by steam treatment, the transparency in the visible spectrum is substantially maintained after the treatment step in the reducing atmosphere is repeated, or compared to the initial value, by air or It can be rebuilt or even exceeded after a particularly enhanced reduction after annealing in a range between 600 ° C and 1000 ° C under vacuum.

實施態樣 Implementation aspect

茲參考實施態樣及圖式更詳細解釋本發明。在圖式中,每次均係與未經本發明使用水蒸氣之調理處理的材料比較。 The invention is explained in more detail with reference to the embodiments and drawings. In the drawings, each time is compared to a material that has not been subjected to the conditioning treatment of water vapor of the present invention.

圖1顯示根據本發明方法所製造之底板在還原氣氛下進行成形步驟之前及之後的內透射之圖;及 圖2顯示相對於溫度(10℃至70℃)之CTE曲線圖。 Figure 1 is a graph showing the internal transmission before and after the forming step of the substrate produced by the method of the present invention under a reducing atmosphere; Figure 2 shows a CTE plot relative to temperature (10 ° C to 70 ° C).

實施例1 Example 1

煙灰體係借助於已知之「外部氣相沉積法(OVD法)」藉由八甲基環四矽氧烷(OMCTS)及異丙氧化鈦[Ti(OPri)4]之火焰水解所製造。煙灰體係由摻雜8重量%之TiO2的合成矽石玻璃所構成。 The soot system is produced by flame hydrolysis of octamethylcyclotetraoxane (OMCTS) and titanium isopropoxide [Ti(OPr i ) 4 ] by means of the known "external vapor deposition method (OVD method)". The soot system consists of a synthetic vermiculite glass doped with 8 wt% of TiO 2 .

現在在含有50體積%之SiF4的氣氛中對此TiO2-SiO2煙灰體進行組合乾燥及摻雜處理。 Now in an atmosphere containing 50% by volume of SiF 4 in this TiO 2 -SiO 2 soot body doping treatment composition and dried.

該處理係在900℃之溫度下進行10小時期間。此導致氟牢固地併入待玻璃化之TiO2-SiO2煙灰體。3小時之處理期間係應用於隨後在800℃溫度的於具有2體積%之H2O之含水蒸氣氣氛的調理處理。 The treatment was carried out at a temperature of 900 ° C for a period of 10 hours. This results in the fluorine being firmly incorporated into the TiO 2 -SiO 2 soot body to be vitrified. The 3-hour treatment period was applied to the conditioning treatment of a water vapor atmosphere having 2% by volume of H 2 O at a temperature of 800 ° C.

該經水蒸氣處理的經氟化TiO2-SiO2煙灰體隨後在燒結爐中於約1400℃之溫度下在氦中或在真空(約10-2 mbar)下玻璃化5小時期間而成為呈棒形式之透明Ti摻雜矽石玻璃底板。此底板顯示僅約6wt.ppm之非常少量Ti3+離子,且以6,000wt.ppm之平均氟含量及60wt.ppm之OH含量著稱。對於10mm樣本厚度之樣本第一次測量在400nm至700nm之波長範圍的內透射(見圖1,曲線1.0),該等值係在60%至70%範圍內。 The steam-treated fluorinated TiO 2 -SiO 2 soot body is then subsequently grown in a sintering furnace at a temperature of about 1400 ° C in a crucible or under vacuum (about 10 -2 mbar) for 5 hours. A transparent Ti-doped vermiculite glass bottom plate in the form of a rod. This bottom plate shows a very small amount of Ti 3+ ions of only about 6 wt. ppm and is known for an average fluorine content of 6,000 wt. ppm and an OH content of 60 wt. ppm. The first measurement of the 10 mm sample thickness was measured for internal transmission in the wavelength range of 400 nm to 700 nm (see Figure 1, curve 1.0), which is in the range of 60% to 70%.

該玻璃化之底板隨後係藉由在還原氫氧焰之作用下捻轉而藉由熱機械均質作用而均質化。棒形底板呈現桶形狀且顯示稍微提高之棕色染色,此伴隨約50%之在可見光譜範圍中之透射值(樣本厚度10mm)。 The vitrified bottom plate is then homogenized by thermomechanical homogenization by twisting under the action of a reducing oxyhydrogen flame. The rod-shaped bottom plate assumes a barrel shape and exhibits a slightly increased brown coloration, which is accompanied by a transmission value of about 50% in the visible spectral range (sample thickness 10 mm).

此接著進行進一步成形成圓筒形體的程序。將該底板置入具有圓形或多邊形橫斷面之底且外徑為約300mm的石墨之熔化模。為了進行該成形程序,將該底板定位於其中的整個熔化模首先加熱至1250℃,然後以9℃/min之升溫速率加熱至1600℃,然後以2℃/min之升溫速率加熱至1680℃之溫度。該矽石玻璃塊體保持在此溫度直到經軟化之Ti摻雜矽石玻璃在其本身的重量作用下流出該熔化模底部,從而填充該模。從該底板形成厚度約60mm的圓形或多邊形板,從三個觀察方向來看,該板均無分層或皮紋。在還原氣氛中之成形步驟之後,在該底板中偵測到9wt.ppm之量的Ti3+或Ti3+/Ti4+之比為約2.5×10-4。在具有10mm之厚度的該底板樣本上的可見光譜範圍中之內透射係在介於約40%與50%之範圍。 This is followed by a procedure for further forming a cylindrical body. The bottom plate was placed into a melting mold of graphite having a bottom of a circular or polygonal cross section and having an outer diameter of about 300 mm. In order to carry out the forming process, the entire melting mold in which the bottom plate is positioned is first heated to 1250 ° C, then heated to 1600 ° C at a heating rate of 9 ° C / min, and then heated to 1680 ° C at a heating rate of 2 ° C / min. temperature. The vermiculite glass block is maintained at this temperature until the softened Ti-doped vermiculite glass flows out of the bottom of the melting mold under its own weight to fill the mold. A circular or polygonal plate having a thickness of about 60 mm was formed from the bottom plate, and the plate was free from delamination or grain lines as seen from the three viewing directions. After the forming step in the reducing atmosphere, a ratio of Ti 3+ or Ti 3+ /Ti 4+ of 9 wt. ppm was detected in the bottom plate to be about 2.5 × 10 -4 . The transmission in the visible spectral range on the substrate sample having a thickness of 10 mm is in the range of about 40% and 50%.

為了減少機械應變及避免雙折射,對Ti摻雜矽石玻 璃底板進行退火處理,其中該圓筒形底板係在空氣中且在大氣壓力下加熱至950℃而且保持期間為8小時,隨後以1℃/h之冷卻速率冷卻至700℃之溫度,且於該溫度下保持4小時。隨後進行以50℃/h之提高的冷卻速率冷卻至300℃,此時關掉該爐並使該底板於該爐中自由冷卻。在該退火溫度之後,獲得800℃之平均虛擬溫度(Tf)。 In order to reduce mechanical strain and avoid birefringence, the Ti-doped vermiculite glass substrate is annealed, wherein the cylindrical bottom plate is heated in air and heated to 950 ° C under atmospheric pressure for a period of 8 hours, followed by 1 The cooling rate of ° C/h was cooled to a temperature of 700 ° C and maintained at this temperature for 4 hours. Subsequently, cooling to 300 ° C was carried out at an increased cooling rate of 50 ° C / h, at which time the furnace was turned off and the bottom plate was freely cooled in the furnace. After this annealing temperature, an average virtual temperature ( Tf ) of 800 °C was obtained.

借助於拉曼(Raman)散射強度在約606cm-1之波數下測定虛擬溫度的標準測量方法係描述於Ch.Pfleiderer等人之"The UV-induced 210nm absorption band in fused silica with different thermal history and stoichiometry"(Journal of Non-Cryst.Solids 159(1993),第143-145頁)。 The standard measurement method for measuring the virtual temperature by means of Raman scattering intensity at a wavenumber of about 606 cm -1 is described in Ch. Pfleiderer et al. "The UV-induced 210 nm absorption band in fused silica with different thermal history and Stoichiometry" (Journal of Non-Cryst. Solids 159 (1993), pp. 143-145).

因於空氣中退火處理之故,藉由使用水蒸氣調理處理而併入之OH基的貯藏所效果被活化,因此該底板甚至顯得比初始玻璃化後更明亮。根據圖1,曲線1.1,根據本發明方法所製造之底板的內透射平均為80%。 Due to the annealing treatment in the air, the effect of the OH-based reservoir incorporated by the steam conditioning treatment is activated, so that the substrate even appears brighter than after the initial vitrification. According to Figure 1, curve 1.1, the internal transmission of the substrate produced according to the method of the invention has an average internal transmission of 80%.

內透射代表校正表面損失之量的整個樣本厚度之透射。 Internal transmission represents the transmission of the entire sample thickness by the amount of corrected surface loss.

此外,就根據本發明方法所製造之底板而言,平均熱膨脹係數係借助於R.Schödel之"Ultra-high accuracy thermal expansion measurements with PTB's precision interferometer"(Meas.Sci.Technol.19(2008)084003(11pp))中所描述的方法利用干涉法測定。 Furthermore, with respect to the base plate produced according to the method of the invention, the average coefficient of thermal expansion is by means of R. Schödel's "Ultra-high accuracy thermal expansion measurements with PTB's precision interferometer" (Meas. Sci. Technol. 19 (2008) 084003 ( The method described in 11 pp)) is determined by an interferometry method.

在根據本發明所製造之底板中,測得為28℃之跨零溫度(TZC)及0.8ppb/K2之CTE斜率。 In the substrate manufactured in accordance with the present invention, a cross-zero temperature (T ZC ) of 28 ° C and a CTE slope of 0.8 ppb / K 2 were measured.

由於該底板在其邊緣部分中顯示相對強之應力雙折射,從前面移除尺寸比該組件輪廓大的部分,換言之,3mm之厚度。該底板因Ti3+/Ti+4之比為0.7×10-4而以可見光譜範圍中之高透明度著稱,且現在可以標準光學測量方法檢查並根據所獲得之測量結果進行進一步處理步驟。 Since the bottom plate exhibits relatively strong stress birefringence in its edge portion, a portion having a larger dimension than the outline of the assembly, in other words, a thickness of 3 mm, is removed from the front. The bottom plate is known for its high transparency in the visible spectral range due to the ratio of Ti 3+ /Ti +4 of 0.7 × 10 -4 , and can now be examined by standard optical measurement methods and further processed according to the obtained measurement results.

圖2之圖式顯示熱膨脹係數CTE為溫度之函數。根據本發明方法製造的氟摻雜之TiO2-SiO2底板的CTE之特別平坦分布可從曲線1明顯看出。於28℃之跨零溫度下的CTE之梯度為0.8ppb/K2The graph of Figure 2 shows the coefficient of thermal expansion CTE as a function of temperature. Producing a fluorine-doped according to the method of the present invention the TiO 2 -SiO 2 base especially a CTE of a flat distribution is evident from curve 1. The gradient of CTE at a cross-zero temperature of 28 ° C was 0.8 ppb / K 2 .

比較實例1 Comparative example 1

在如實施例1中更詳細解釋的條件下,製造TiO2-SiO2煙灰體且在含有20體積%之SiF4的氣氛中進行組合乾燥及摻雜處理。 Under conditions as in Example 1 explained in more detail, for producing TiO 2 -SiO 2 soot body, and an atmosphere containing 20 vol% of SiF 4 in combination drying and doping treatment.

此處理係在900℃之溫度下進行10小時期間,且導致氟牢固地併入待玻璃化的TiO2-SiO2煙灰體。現在接著進行於1000℃在常壓下以100%氧之氣氛於煙灰體上作用4小時的氧處理。然後在氦氣氛中於1550℃下進行玻璃化。獲得之底板因而具有低於1wt.ppm的OH含量(低於偵測下限),但因2×10-4之相當有利的Ti3+對Ti4+之比的緣故,在可見光譜範圍中尚未顯示介於約60%與75%之間的良好透射,如圖1中曲線2.0.所示。該底板現在必須均質化及成形。該等後續方法步驟係在還原氣氛下進行。在已均質作用之後,可偵測該底板的強烈棕色染色,其在隨 後成形程序中更為加劇。在空氣中於1000℃之退火處理不會改變此棕色染色。因在均質作用及成形期間的主要還原氣氛之故,Ti3+/Ti4+比偏移至有利於Ti3+離子,且為約2.5×10-4。因此,具有10mm厚度之底板的樣本塊顯示內透射不可逆地降低至約45%的值,如圖1中曲線2.1。由於在現實可行之時間期間內,現在實質上沒有氧能穿透至該經玻璃化底板中以供Ti3+重新氧化成Ti4+所用,故此性質無法藉由在空氣中退火處理而改善。根據該比較實例所製造之比較材料V1因而不再適用於EUV微影術中的用途。因此,與使用水蒸氣調理處理之本發明方法相反的,在玻璃化前氧處理不會導致併入氧提供貯藏所效果。 This treatment was carried out at a temperature of 900 ° C for 10 hours and caused the fluorine to be firmly incorporated into the TiO 2 -SiO 2 soot body to be vitrified. The oxygen treatment was then carried out on a soot body at 1000 ° C for 4 hours under atmospheric pressure in a 100% oxygen atmosphere. The vitrification was then carried out at 1550 ° C in a helium atmosphere. The obtained substrate thus has an OH content of less than 1 wt. ppm (below the detection limit), but is not yet in the visible spectrum due to the relatively favorable ratio of Ti 3+ to Ti 4+ of 2 × 10 -4 A good transmission between about 60% and 75% is shown, as shown by curve 2.0 in Figure 1. The substrate must now be homogenized and formed. These subsequent process steps are carried out under a reducing atmosphere. After homogenization, intense brown staining of the bottom plate can be detected, which is exacerbated in subsequent forming procedures. Annealing at 1000 ° C in air does not alter this brown staining. Due to the homogenization and the main reducing atmosphere during the formation, the Ti 3+ /Ti 4+ ratio is shifted to favor Ti 3+ ions and is about 2.5×10 -4 . Thus, a sample block having a bottom plate having a thickness of 10 mm shows an irreversible reduction in internal transmission to a value of about 45%, as shown in curve 2.1 of FIG. This property cannot be improved by annealing in air, since virtually no oxygen can penetrate into the vitrified base plate for reoxidation of Ti 3+ to Ti 4+ during the practical time period. The comparative material V1 produced according to this comparative example is thus no longer suitable for use in EUV lithography. Thus, in contrast to the inventive method using steam conditioning treatment, oxygen treatment prior to vitrification does not result in the incorporation of oxygen to provide a storage effect.

至於為溫度函數之熱膨脹係數CTE的曲線,圖2中未顯示出實施例1之曲線1因改為比較材料V1而改變,原因係CTE曲線實質上係由鈦及氟含量界定,而在比較實例1及本發明之實施例1中的鈦及氟含量相同。 As for the curve of the thermal expansion coefficient CTE as a function of temperature, the curve 1 of the embodiment 1 is not shown in Fig. 2 because it is changed to the comparison material V1, because the CTE curve is substantially defined by the titanium and fluorine content, and in the comparative example. 1 and the titanium and fluorine contents in Example 1 of the present invention are the same.

比較實例2 Comparative example 2

在於實施例1中更詳細解釋的條件下,製造TiO2-SiO2煙灰體,然而其僅包含7.4重量%之TiO2含量。該TiO2-SiO2煙灰體係在無乾燥步驟且無氟處理的情況下經玻璃化。亦省略使用水蒸氣或使用氧之調理處理。在玻璃化之後,該底板含有250wt.ppm之OH含量。此相當高OH含量導致在成形之前為65%,以及在成形且退火後具有對應小Ti3+/Ti4+之比時甚至為85%的相對高透射值。然 而僅有該等內透射值對於在EUV微影術中之合格性並不明確;而是亦必須考慮CTE曲線及虛擬溫度。 The TiO 2 -SiO 2 soot body was produced under the conditions explained in more detail in Example 1, however it contained only 7.4% by weight of TiO 2 content. The TiO 2 -SiO 2 soot system was vitrified without a drying step and without a fluorine treatment. Conditioning treatment using water vapor or using oxygen is also omitted. After vitrification, the bottom plate contained an OH content of 250 wt. ppm. This relatively high OH content results in a 65% pre-formation and a relatively high transmission value of 85% even when formed and annealed with a ratio of small Ti 3+ /Ti 4+ . However, only such internal transmission values are not clear for eligibility in EUV lithography; rather, CTE curves and virtual temperatures must also be considered.

CTE曲線係在均質作用、成形及退火之後測定,如實施例1所述。在圖2中,曲線2顯示比較材料V2在該溫度中的CTE分布非常陡。在此情況下於28℃之跨零溫度下的CTE之梯度為1.6ppb/K2。因不存在氟之故,虛擬溫度(Tf)為930℃。 The CTE curve was determined after homogenization, shaping and annealing as described in Example 1. In Fig. 2, curve 2 shows that the CTE distribution of the comparative material V2 at this temperature is very steep. The gradient of CTE at a cross-zero temperature of 28 ° C in this case was 1.6 ppb / K 2 . The virtual temperature (T f ) was 930 ° C due to the absence of fluorine.

根據本發明方法根據實施例1製造之底板與比較實例1及2之比較材料V1及V2的實質性質係彙總於下表。 The substantial textures of the substrates manufactured according to Example 1 and the comparative materials V1 and V2 of Comparative Examples 1 and 2 according to the method of the present invention are summarized in the following table.

Claims (8)

一種製造用於EUV微影術之鈦摻雜玻璃底板之方法,該玻璃底板具有高矽酸含量且在樣本厚度為10mm下,於400nm至700nm之波長範圍的內透射為至少60%,鈦係以Ti3+及Ti4+之氧化形式存在,且具有給定之氟含量,該方法包括下列步驟:(a)利用含矽及含鈦之前驅物質的火焰水解製造TiO2-SiO2煙灰體,(b)將該煙灰體氟化以形成氟摻雜之TiO2-SiO2煙灰體,(c)在含水蒸氣之氣氛中處理該氟摻雜之TiO2-SiO2煙灰體以形成經調理之煙灰體,(d)將該經調理之煙灰體玻璃化以形成高矽酸含量,平均OH含量在10至100wt.ppm之範圍且平均氟含量在2,500至10,000wt.ppm之範圍的鈦摻雜玻璃之底板。 A method of fabricating a titanium-doped glass substrate for EUV lithography having a high tannic acid content and having an internal transmission of at least 60% in the wavelength range of 400 nm to 700 nm at a sample thickness of 10 mm, titanium Having an oxidized form of Ti 3+ and Ti 4+ and having a given fluorine content, the method comprises the steps of: (a) producing a TiO 2 -SiO 2 soot body by flame hydrolysis of a ruthenium-containing and titanium-containing precursor material, (b) fluorinating the soot body to form a fluorine-doped TiO 2 -SiO 2 soot body, (c) treating the fluorine-doped TiO 2 -SiO 2 soot body in a vapor-containing atmosphere to form a conditioned Soot body, (d) vitrification of the conditioned soot body to form a high citric acid content, titanium doping having an average OH content in the range of 10 to 100 wt. ppm and an average fluorine content in the range of 2,500 to 10,000 wt. ppm The bottom plate of the glass. 如申請專利範圍第1項之方法,其中該底板在玻璃化之後係在還原氣氛中進行處理,於該處理中Ti3+/Ti4+比提高同時在400nm至700nm之波長範圍的內透射降低,且其中隨後該底板係在介於600℃與1000℃之間的範圍之溫度下進行退火處理以復原該內透射的降低。 The method of claim 1, wherein the substrate is treated in a reducing atmosphere after vitrification, wherein the Ti 3+ /Ti 4+ ratio is increased while the internal transmission is reduced in the wavelength range of 400 nm to 700 nm. And wherein the bottom plate is subsequently annealed at a temperature between 600 ° C and 1000 ° C to restore the reduction in internal transmission. 如申請專利範圍第1或2項之方法,其中該根據方法步驟(c)之使用水蒸氣的調理處理係在100℃至1000℃之範圍,較佳在500℃至1000℃之範圍的處理溫度下進行1至10小時之持續期間。 The method of claim 1 or 2, wherein the conditioning treatment using water vapor according to method step (c) is in the range of from 100 ° C to 1000 ° C, preferably from 500 ° C to 1000 ° C. The duration is 1 to 10 hours. 如申請專利範圍第1或2項之方法,其中在該根據方法步驟(c)之使用水蒸氣的調理處理中,惰性氣體中之水蒸氣的量係介於0.05體積%與50體積%之間,較佳係介於1與20體積%之間。 The method of claim 1 or 2, wherein in the conditioning treatment using water vapor according to method step (c), the amount of water vapor in the inert gas is between 0.05% by volume and 50% by volume. Preferably, it is between 1 and 20% by volume. 如申請專利範圍第1或2項之方法,其中在根據方法步驟(b)之氟化之前進行乾燥,因此設定平均OH含量低於10wt.ppm。 The method of claim 1 or 2, wherein the drying is carried out prior to fluorination according to method step (b), so that the average OH content is set to be less than 10 wt. ppm. 如申請專利範圍第1或2項之方法,其中根據方法步驟(b)之氟化係在含有2體積%至100體積%之SiF4的含氟氣氛中進行。 The method of claim 1 or 2, wherein the fluorination according to method step (b) is carried out in a fluorine-containing atmosphere containing 2% by volume to 100% by volume of SiF 4 . 如申請專利範圍第1或2項之方法,其中根據方法步驟(b)之氟化係在700℃至不超過1000℃之溫度範圍下進行。 The method of claim 1 or 2, wherein the fluorination according to method step (b) is carried out at a temperature ranging from 700 ° C to not more than 1000 ° C. 一種用於EUV微影術之由高矽酸含量的鈦摻雜玻璃所構成之底板,其具有在樣本厚度為10mm下,於400nm至700nm之波長範圍為至少60%之內透射;其係根據下列方法步驟製造:(a)利用含矽及含鈦之前驅物質的火焰水解製造TiO2-SiO2煙灰體,(b)將該煙灰體氟化以形成氟摻雜之TiO2-SiO2煙灰體,(c)在含水蒸氣之氣氛中處理該氟摻雜之TiO2-SiO2煙灰體以形成經調理之煙灰體,及(d)將該經調理之煙灰體玻璃化以形成高矽酸含量之 鈦摻雜玻璃的底板;其平均氟含量在2,500至10,000wt.ppm之範圍;其平均OH含量在10至100wt.ppm之範圍;且其平均TiO2含量在6重量%至12重量%之範圍,其中鈦係以Ti3+及Ti4+之氧化形式存在,且Ti3+/Ti4+之比係調整至2×10-4之值。 A bottom plate composed of titanium-doped glass of high tannic acid content for EUV lithography, having a transmission of at least 60% in a wavelength range of 400 nm to 700 nm at a sample thickness of 10 mm; The following method steps are made: (a) TiO 2 -SiO 2 soot body is produced by flame hydrolysis of barium-containing and titanium-containing precursors, and (b) the soot body is fluorinated to form fluorine-doped TiO 2 -SiO 2 soot. Body (c) treating the fluorine-doped TiO 2 -SiO 2 soot body in a vapor-containing atmosphere to form a conditioned soot body, and (d) vitrifying the conditioned soot body to form perrhenic acid the titanium content of doped glass plate; the average fluorine content in the range of 2,500 to 10,000wt.ppm; average OH content in the range of 10 to 100wt.ppm; and an average 6 wt% TiO 2 content to 12 wt% The range in which the titanium is present in the oxidized form of Ti 3+ and Ti 4+ , and the ratio of Ti 3+ /Ti 4+ is adjusted to 2 × 10 -4 value.
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Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529340B2 (en) * 1999-06-10 2010-08-25 旭硝子株式会社 Synthetic quartz glass and manufacturing method thereof
DE10208371A1 (en) * 2002-02-27 2003-09-11 Degussa Dispersions giving green bodies yielding high optical quality, low-shrinkage glass contain a silicon-titanium mixed oxide powder together with water and pH-regulator
JP4792706B2 (en) 2003-04-03 2011-10-12 旭硝子株式会社 Silica glass containing TiO2 and method for producing the same
EP1547981A3 (en) * 2003-12-25 2011-07-06 Sumitomo Electric Industries, Ltd. Method of manufacturing fluorine doped silica glass article, preform and optical fiber and optical fiber made by the method
EP1761469B1 (en) * 2004-07-01 2013-05-22 Asahi Glass Company, Limited Silica glass containing tio2 and process for its production
US20060179879A1 (en) 2004-12-29 2006-08-17 Ellison Adam J G Adjusting expansivity in doped silica glasses
US7964522B2 (en) * 2006-08-31 2011-06-21 Corning Incorporated F-doped silica glass and process of making same
TW200940472A (en) * 2007-12-27 2009-10-01 Asahi Glass Co Ltd TiO2-containing silica glass
JP5428323B2 (en) * 2007-12-27 2014-02-26 旭硝子株式会社 Silica glass containing TiO2
JP5644058B2 (en) * 2008-03-21 2014-12-24 旭硝子株式会社 Silica glass containing TiO2
US8735308B2 (en) * 2009-01-13 2014-05-27 Asahi Glass Company, Limited Optical member comprising TiO2-containing silica glass
EP2377826B2 (en) * 2009-01-13 2020-05-27 AGC Inc. OPTICAL MEMBER COMPRISING SILICA GLASS CONTAINING TiO2
CN102421713A (en) * 2009-05-13 2012-04-18 旭硝子株式会社 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
JP5510308B2 (en) * 2009-12-25 2014-06-04 旭硝子株式会社 EUVL optical member base material
US8541325B2 (en) 2010-02-25 2013-09-24 Corning Incorporated Low expansivity, high transmission titania doped silica glass
JP2011225438A (en) * 2010-04-01 2011-11-10 Asahi Glass Co Ltd Method for manufacturing synthetic quartz glass
JP6020234B2 (en) * 2012-02-21 2016-11-02 旭硝子株式会社 Method for producing titania-containing silica glass body
US8901019B2 (en) * 2012-11-30 2014-12-02 Corning Incorporated Very low CTE slope doped silica-titania glass
DE102013108885B3 (en) * 2013-08-16 2014-08-07 Heraeus Quarzglas Gmbh & Co. Kg Process for the production of titanium-doped silica glass for use in EUV lithography and subsequently produced blank

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