TW201624796A - A substrate structure for electronic device and production method thereof - Google Patents

Abstract

The present disclosure provides a substrate structure for an electronic device, which comprises a supporting carrier; a release layer having has a first micro-structure, and a first degree of adhesion between the release layer and the supporting carrier; and a flexible substrate set on the supporting carrier and the release layer, wherein a second degree of adhesion is provided between the flexible substrate and the release layer, and the first degree of adhesion is greater than the second degree of adhesion, a second micro-structure relative to the first micro-structure is provided on the surface of the flexible substrate contacting with the surface of the release layer. The present disclosure further provides a method for preparing the substrate structure.

Description

Substrate structure for electronic components and method of manufacturing same

The present disclosure relates to a substrate structure for an electronic component and a method of fabricating the same, and more particularly to a substrate structure capable of protecting a microstructure and a method of fabricating the same.

Soft electronics are mainly divided into soft components, soft displays, soft sensing and soft energy. Soft electronics have become the development trend of new generations of novel electronic products due to their thinness and flexibility. The application of soft electronics is still mainly concentrated in the three major industries of display, illumination and solar photovoltaic. Among them, the illumination source using organic light-emitting diode (OLED) has been regarded as the new illumination source of the next generation. However, if OLED lighting can be applied to the industry, the problem of improved efficiency needs to be solved. In addition to being improved by luminescent materials, it is still limited to the result of light extraction. According to Snell's rule, it can be used now. The luminescence is actually only about 20%, if the external light extraction (Subternal Light Out-coupling) technology and the other modes (Waveguide and Surface Plasmon Modes) are internal light extraction (Internal Light) Out-coupling technology, OLED lighting will be eager to get a lot of room for improvement.

Therefore, the improvement of the light extraction efficiency has become a problem that is currently being solved.

The present disclosure provides a method for fabricating a substrate structure for an electronic component, comprising: forming a release layer having a first surface and a second surface opposite to the support carrier, the release layer having a first area and the release layer Forming a second surface contact on the support carrier; forming a first microstructure on the first surface of the release layer, and curing the release layer such that the release layer has a first between the support carriers Forming a soft substrate on the support carrier and the release layer, and the flexible substrate covers the support carrier and the release layer with a second area, wherein the second area is larger than the first area, and The surface of the flexible substrate contacting the first surface of the release layer has a second microstructure relative to the first microstructure; and curing the flexible substrate such that the flexible substrate has a second adhesion between the release layers Degree, wherein the first degree of adhesion is greater than the second degree of adhesion.

According to the foregoing method, the present disclosure provides a substrate structure for an electronic component, comprising a support carrier; the release layer has a first surface and a second surface, the release layer has a first area and the release layer The layer is disposed on the support carrier with the second surface contact, wherein the first surface has a first microstructure, and the release layer has a first degree of adhesion between the support carriers; and a flexible substrate Provided on the first surface of the release layer, and the flexible substrate covers the support carrier and the release layer with a second area having an area larger than the first area, wherein the flexible substrate has between the release layers a second degree of adhesion, and the first degree of adhesion is greater than the second degree of adhesion, and The flexible substrate surface in contact with the first surface of the release layer has a second microstructure relative to the first microstructure.

The substrate structure for electronic components of the present disclosure has a microstructured pattern, and the external light-removing film is not required to be additionally attached, and the problem of light extraction can be solved by a simple structure and a manufacturing method, and further, the flexible substrate is used. The adhesion to the support carrier does not fall off during the subsequent component process, and then the flexible substrate and the release layer are easily separated, and after the subsequent electronic component is completed, the release layer has the same The flexible substrate can be easily separated from the release layer by the boundary of one area, and the flexible substrate can be supported by the support carrier to facilitate the subsequent component process.

10‧‧‧Support carrier

11‧‧‧ release layer

11a‧‧‧ first surface

11b‧‧‧ second surface

11c‧‧‧First microstructure

12c‧‧‧Second microstructure

12‧‧‧Soft substrate

20‧‧‧Mold

30‧‧‧Electronic components

A1‧‧‧ first area

A2‧‧‧ second area

C, C’‧‧‧ endpoint

1 is a schematic view showing a microstructure of a release layer; FIG. 2 is a schematic view showing a structure of a substrate; FIG. 3 is a schematic view showing a structure of a substrate having electronic components; and FIG. 4 is a view showing a flexible substrate having electronic components and Schematic diagram of the release layer separation.

The embodiments of the present disclosure are described below by way of specific embodiments, and those skilled in the art can readily appreciate the other advantages and functions of the present disclosure.

The present disclosure provides a method for fabricating a substrate structure for an electronic component. As shown in FIG. 1, a release layer 11 having a first surface 11a and a second surface 11b opposite to each other is formed on a support carrier 10, and the release layer 11 is formed on the support carrier 10. With the first side The product A1 is formed on the support carrier 10 by contacting the second surface 11b, wherein the support carrier 10 can be any material that is hard enough to be applied to other processes for forming a release pattern. Layer 11 and flexible substrate 12. In general, the support carrier 10 may be in the form of a layer or a plate. For example, the support carrier 10 may be a plate selected from the group consisting of glass, quartz, germanium wafers, and metal sheets. body.

The release layer 11 can be a thermosetting polymer. Generally, the thermosetting polymer can be dissolved in a solvent, applied to the support carrier 10, for example, by coating, and the release layer 11 is obtained after the drying. . Further, the material of the release layer 11 is not limited. In a non-limiting example, the release layer 11 is selected from the group consisting of polysiloxane, polysiloxane hybridize materials, and cycloolefin copolymerization. At least one of a group consisting of cyclic olefin copolymers (COC), poly(methyl methacrylate) (PMMA), and polyimine (PI).

The substrate structure for electronic components of the present disclosure has a microstructure, and the microstructure is formed on the surface of the flexible substrate, and the fabrication of the microstructure is transferred through the release layer. The following describes how to make it.

As shown in Fig. 1, before the release layer 11 is cured, the first surface 11a of the release layer 11 is embossed with a mold 20 to form a first microstructure 11c. The curing described herein means that the release layer 11 is completely cured or hardened, so that when the first microstructure 11c of the first surface 11a of the release layer 11 is formed, the mold 20 can be directly imprinted with the applied After the thermosetting polymer dissolved in the solvent, the mold 20 is semi-cured or cured, the mold 20 is removed.

Next, the release layer 11 is cured, and the curing refers to heat treatment or UV irradiation. In a non-limiting example, the heat treatment is performed at a temperature of 150 ° C for 2 hours, or the UV irradiation is 1000 mJ/cm ² . Light was irradiated for 120 seconds. After being cured, the release layer 11 has a first degree of adhesion between the support carriers 10. For example, the first degree of adhesion is 1B to 5B. In another embodiment, as shown in FIG. 2, another thermosetting polymer is coated on the support carrier 10 and the release layer 11 to form the flexible substrate 12. As the aforementioned method of producing the release layer 11, the coating is not particularly limited. Examples of the coating include blade coating or roller coating, and the material of the applied flexible substrate 12 is also not particularly limited, and is mainly selected from thermosetting and transparent materials, and the thermosetting property is easily separated from the release layer by using a thermosetting property. The transparent material is suitable for optical components. For example, the flexible substrate is selected from the group consisting of polyamidos, polycarbonate (PC), polyethersulfone (PES), polynorbornene (PNB). At least one of a group consisting of polyester, polyetheretherketone (PEEK), and polyetherimide (PEI).

The formed flexible substrate 12 covers the support carrier 10 and the release layer 11 with a second area A2, wherein the second area A2 is larger than the first area A1 and is in contact with the first surface 11a of the release layer 11. The surface of the flexible substrate 12 has a second microstructure 12c opposite to the first microstructure 11c. The second microstructure 12c includes a plurality of convex portions, which are hemispherical, pyramidal, barrel-shaped or irregularly concave and convex, wherein the convex portion has a size of 1 nm to 1 mm.

After the coating is completed, the flexible substrate 12 is cured, wherein the purpose of the curing is to harden the flexible substrate 12, in a non-limiting example, The flexible substrate 12 is cured by heating at a temperature of 80 ° C and 150 ° C for 1 hour or at a temperature of 220 ° C for 3 hours, and has a second degree of adhesion between the release layers 11 , for example, the second density. The degree of importance is 0B to 1B, wherein the first degree of adhesion is greater than the second degree of adhesion.

According to the foregoing method, a substrate structure for an electronic component can be provided, including: a support carrier 10; a release layer 11; and a flexible substrate 12.

The support carrier 10 can be any material that is hard enough to be applied to other processes for the release layer 11 and the flexible substrate 12 to be disposed thereon. In general, the support carrier 10 may be in the form of a layer or a plate. For example, the support carrier 10 may be a plate selected from the group consisting of glass, quartz, germanium wafers, and metal sheets. body.

The release layer 11 has a first area and the release layer 11 has a first surface 11a and a second surface 11b opposite to each other. The release layer 11 is disposed on the support carrier 10 by contacting the second surface 11b. Wherein, the first surface 11a has a first microstructure 11c, and the release layer 11 has a first degree of adhesion between the support carriers 10, for example, the first degree of adhesion is 1B to 5B. Further, the release layer is a thermosetting polymer. In one embodiment, the release layer is selected from the group consisting of polyoxyalkylene, polyoxyalkylene blending materials, cycloolefin copolymers, polymethyl methacrylate, and polyamidamine. .

The flexible substrate 12 is disposed on the first surface of the support carrier 10 and the release layer 11, and the flexible substrate 12 covers the support carrier 10 and the release type with a second area A2 having an area larger than the first area A1. a layer 11, wherein the flexible substrate 12 has a second degree of adhesion between the release layers 11, for example, 0B to 1B, and the first degree of adhesion is greater than the second degree of adhesion, and The surface of the flexible substrate 12 in contact with the first surface 11a of the release layer 11 has a second microstructure 12c opposite to the first microstructure 11c. The second microstructure 12c includes a plurality of convex portions, which are hemispherical, pyramidal, barrel-shaped or irregularly concave and convex, wherein the convex portion has a size of 1 nm to 1 mm. Further, the flexible substrate is a thermosetting polymer. In one embodiment, the flexible substrate is selected from the group consisting of polyamidoamine, polycarbonate, polyether oxime, polypyrene, polyester, polyetheretherketone, and polyetherimine. One.

Further, as shown in FIG. 3, the release layer 11 covers the two ends C and C' of the first area A1 of the support carrier 10, or the inside of the C and C' can be used as a cut-off point to cut the The flexible substrate 12 separates the flexible substrate 12 from the release layer 11. However, before the flexible substrate 12 and the release layer 11 are separated, the flexible substrate 12 covers the support carrier 10 and the release layer 11 with a second area A2 having an area larger than the first area A1. The substrate structure of the electronic component can provide good adhesion to form an electronic component 30, such as an OLED, on the flexible substrate 12.

As shown in FIG. 4, after the subsequent process of the electronic component 30 is further completed on the flexible substrate 12, the flexible substrate 12 is cut away to separate the flexible substrate 12 from the release layer 11.

Example Preparation of release layer Preparation Example 1 Preparation of Release Layer 1

At room temperature, 0.5 g of polydimethylsiloxane (PDMS) main agent A and 0.05 g of PDMS hardener B were poured into a beaker, stirred well and defoamed, and PDMS prepared. The material was poured onto a 10 x 10 cm square glass carrier, imprinted on the PDMS material using a mold having a hemispherical relief structure, the excess material was removed, and then heated at a temperature of 150 ° C for 2 hours. After the mold is removed by cooling, the release layer 1 having a microstructure pattern can be formed.

Preparation Example 2 Preparation of Release Layer 2

Under the yellow light chamber, 0.5 g of polyoxymethane mixed material (Ormostamp®, purchased from Micro resist technology GmbH) was poured onto a 10×10 cm 2 glass carrier. The mold of the hemispherical concave-convex structure was imprinted on the polyoxane-mixed material, and the excess material was removed, and then irradiated with 1000 mJ/cm ² of UV light for 120 seconds. After the mold is completely removed after the complete curing, the release layer 2 having a microstructure pattern can be formed.

Preparation of Polyimine Solution for Flexible Substrate Synthesis Example 1 Preparation of Polyiminide (PI-1) Solution

82.7 g of monomer A (2,2-bis[4-(4-aminophenoxy)phenyl]propane) and 50 a monomer of B (bicyclo[2,2,2]oct-7-alkenyl-2,3,5,6-tetracarboxylic dianhydride (bicyclo[2,2,2]oct-7-ene- 2,3,5,6-tetracarboxylic dianhydride)) was added to a 2 L glass reaction tank with 530.8 g of m-cresol. The reaction was carried out by electric stirring at 220 ° C for 4 hours to form a polyamine reaction solution having a solid content of 20%. This polyamine reaction solution was reprecipitated with methanol. After drying, a filamentous polyamidamine is obtained. Further, it was dissolved by adding dimethyl acetamide to prepare a polyamine (PI-1) solution having a solid content of 15%. The polybendamine (PI-1) has a b value (yellowness value) of 2.37, a weight average molecule The amount was 25024 mol/g and the viscosity was 13225 cp.

Synthesis Example 2 Preparation of Polyiminide (PI-2) Solution

28.2 grams of monomer A, 32.1 grams of monomer C (4,4-diaminodiphenyl ether) and 50 grams of monomer D (pyromellitic) The dianhydride)) was added to a 2 L glass reaction tank with 441.4 g of m-cresol, and the same procedure as in the synthesis example 1 was carried out to obtain a filamentous polyamidamine. Further, dimethylacetamide was added to dissolve to prepare a polyamine (PI-2) solution having a solid content of 15%. The polyamidamine copolymer (PI-2) had a b value of 1.95, a weight average molecular weight of 18572 mol/g, and a viscosity of 10955 cp.

Synthesis Example 3 Preparation of a cerium oxide/polyimine mixture material (PI-3) solution

51.5 g of monomer E (4,4'-bis(3-aminophenoxy)diphenyl sulfone), 43.8 g of monomer F (4,4-bis(4-aminophenoxy)biphenyl), 50 g of monomer G (1,2,3,4-cyclopentane) a linear polytheneamine was obtained by adding 581.1 g of m-cresol to a 2 L glass reaction tank in the same manner as in the preparation method of Synthesis Example 1. . Further, dimethylacetamide was added to dissolve, and a polyamine solvent solution having a solid content of 15% was prepared, and a 15% SiO2 dispersion was added at a weight ratio of cerium oxide/polyiminamide of 20:80 to form a dispersion of 15% SiO2. A cerium oxide/polyimine mixture material (PI-3) solution. The ceria/polyimine mixed material solution had a b value of 2.12, a weight average molecular weight of 10938 mol/g, and a viscosity of 5840 cp.

Tightness test

The coating was equally divided into 100 cells on a flexible substrate by using a hundred-square knife in a vertical orthogonal direction, and each size was about 1 mm x 1 mm. Then use 3M tape #600 tape to stick the area of the 100-gauge knife and tear off the 3M tape. Among them, 100% small squares are completely torn to 0B, 20% small squares cannot be torn to 1B, and 100% small squares cannot be Torn up to 5B.

Comparative Example 1 Polyimide (PI-1) substrate formed on a stainless steel plate

The PI-1 solution of Synthesis Example 1 was coated on a stainless steel plate and cured to form a PI-1 substrate. Next, the adhesion test of the stainless steel plate and the PI-1 substrate was carried out, and the results are shown in Table 1.

Comparative Example 2 Formation of a cerium oxide/polyimine mixture (PI-3) substrate on a stainless steel plate

The stainless steel plate was coated with the PI-3 solution of Synthesis Example 3, and cured to form a PI-3 substrate. Next, the adhesion test of the stainless steel plate and the PI-3 substrate was carried out, and the results are shown in Table 1.

Example 1 Forming a PI-1 Substrate on Release Layer 1

The PI-1 solution of Synthesis Example 1 was coated on the release layer 1 of Preparation Example 1, followed by curing to form a PI-1 substrate. Next, the adhesion test of the release layer 1 and the PI-1 substrate was carried out, and the results are shown in Table 1.

Example 2 Forming a PI-1 substrate on the release layer 2

The PI-1 of Synthesis Example 1 was coated on the release layer 2 of Preparation Example 2, followed by curing to form a PI-1 substrate. Next, the adhesion test of the release layer 2 and the PI-1 substrate was carried out, and the results are shown in Table 1.

Embodiment 3 Forming a PI-3 mixed substrate on the release layer 1

The PI-3 of Synthesis Example 3 was coated on the release layer 1 of Preparation Example 1, followed by The curing was carried out to form a PI-3 mixed substrate. Next, the adhesion test of the release layer 1 and the PI-3 mixed substrate was carried out, and the results are shown in Table 1.

Example 4 Formation of PI-3 Mixed Substrate on Release Layer 2

The PI-3 of Synthesis Example 3 was coated on the release layer 2 of Preparation Example 2, followed by curing to form a PI-3 mixed substrate. Next, the adhesion test of the release layer 2 and the PI-3 mixed substrate was carried out, and the results are shown in Table 1.

It can be seen from Table 1 that Comparative Examples 1 to 2 are a method for manufacturing a conventional flexible substrate, and in the case where the release layer is not contained, the adhesion is greater than 1 B, which makes it difficult to easily remove the carrier after the preparation of the flexible substrate is completed. Compared with the test results of Examples 1 to 4, the substrate structure having the release layers 1 and 2 can easily completely tear the flexible substrate without causing damage to the flexible substrate.

Current efficiency test for substrates containing electronic components

The following examples of electronic component-containing substrates were tested for voltage and current via Keithley 238 equipment.

Comparative Example 3 simply using glass as a substrate

A TFT grade glass substrate (thickness: 0.7 mm) was taken, and 200 nm of ITO and 50 nm of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)biphenyl-4 were sequentially deposited. 4'-Diamine (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine, NPB), 10 nm CBP: Irppy3 (3%), 10 nm 2,9- Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 35 nm Alq ₃ , 0.5 nm The LiF and 120 nm of aluminum are on the smooth surface of the glass substrate, that is, a green OLED is formed. Subsequently, a current efficiency test was performed and the results are reported in Table 2.

Comparative Example 4 PI-1 alone as a substrate

PI-1 was coated on a smooth glass plate, cured to form a PI-1 substrate (thickness 30 μm), and the glass substrate and the PI-1 substrate were separated, and 200 nm was sequentially evaporated on the separated PI-1 substrate. ITO, 50 nm NPB, 10 nm CBP: Irppy 3 (3%), 10 nm BCP, 35 nm Alq ₃ , 0.5 nm LiF and 120 nm aluminum on the smooth surface of the PI-1 substrate, ie, a green OLED is formed. Subsequently, a current efficiency test was performed and the results are reported in Table 2.

Comparative Example 5 PEN alone as a substrate

A commercially available PEN substrate (TEONEX Q65FA PEN was purchased from DuPont Teijin, thickness 0.1 mm), and 200 nm of ITO, 50 nm of NPB, 10 nm of CBP: Irppy 3 (3%), and 10 nm of BCP were sequentially deposited. A 35 nm Alq ₃ , a 0.5 nm LiF and a 120 nm aluminum were formed on the smooth surface of the PEN substrate to form a green OLED. Subsequently, a current efficiency test was performed, and the results are reported in Table 2.

Comparative Example 6 PEN substrate with a light-receiving film attached

A PEN substrate is commercially available, and a light-receiving film having a hemispherical concave-convex structure (Microlens Film, a hemisphere height of 20 to 30 μm, purchased from EFUN Technology Corporation) is attached, and then 200 nm is sequentially evaporated. ITO, 50 nm NPB, 10 nm CBP: Irppy 3 (3%), 10 nm BCP, 35 nm Alq ₃ , 0.5 nm LiF and 120 nm aluminum on the smooth surface of the PEN substrate, ie, forming a green OLED followed by Current efficiency tests were performed and the results are reported in Table 2.

Embodiment 5 Forming a PI-1 substrate having an irregular uneven structure on a release layer

The release layer was prepared in the same manner as in Preparation Example 1, and only the imprint mold having hemispherical irregularities was changed to frosted glass. Next, the PI-1 solution is coated on the release layer and cured to form a soft substrate having a lower surface and a smooth upper surface having an irregular concavo-convex structure, wherein the difference between the highest point and the lowest point of the irregular concavo-convex structure is It is less than 3 μm, and the thickness of the flexible substrate is 110 μm. Subsequently, 200 nm of ITO, 50 nm of NPB, 10 nm of CBP: Irppy 3 (3%), 10 nm of BCP, 35 nm of Alq ₃ , 0.5 nm of LiF and 120 nm of aluminum were sequentially deposited on the PI-1 substrate. The green OLED was removed from the soft OLED. Finally, the current efficiency test was performed and the results are reported in Table 2.

Embodiment 6 Forming a PI-1 substrate on the release layer 1

Taking the release layer 1 of Preparation Example 1, the PI-1 solution was coated on the release layer 1, and cured to form a flexible substrate having a hemispherical concave-convex structure, the upper surface of which was a smooth surface, and the concave and convex structure of the lower surface thereof was A hemispherical regular structure having a hemisphere height of between 20 μm and 30 μm, a diameter of between 50 μm and 60 μm, and a thickness of the flexible substrate of 120 μm. Next, 200 nm of ITO, 50 nm of NPB, 10 nm of CBP: Irppy 3 (3%), 10 nm of BCP, 35 nm of Alq ₃ , 0.5 nm of LiF and 120 nm of aluminum were sequentially deposited on the PI-1 substrate. The green OLED was removed from the soft OLED, and then the current efficiency test was performed, and the results are reported in Table 2.

Example 7 Forming a PI-2 Substrate with Irregular Concavo-convex Structure on a Release Layer

In the same manner as in the production method of Example 5, only the PI-1 solution was replaced with the PI-2 solution. The soft OLED was removed from the release, and then a current efficiency test was performed, and the results are reported in Table 2.

Example 8 Forming a PI-2 Substrate on Release Layer 1

In the same manner as in the production method of Example 6, only the PI-1 solution was replaced with the PI-2 solution. The soft OLED was removed from the release, and then a current efficiency test was performed, and the results are reported in Table 2.

Example 9 Forming a PI-3 hybrid substrate having an irregular concavo-convex structure on a release layer

In the same manner as in the production method of Example 5, only the release layer was replaced with the release layer 2 of Preparation Example 2, and the imprint mold having hemispherical irregularities was changed to frosted glass, and the PI-1 solution was replaced with the PI-3 solution. The soft OLED was removed from the release, and then a current efficiency test was performed, and the results are reported in Table 2.

Example 10 Formation of PI-3 Mixed Substrate on Release Layer 2

In the same manner as in the production method of Example 6, only the release layer 1 was replaced with the release layer 2 of Preparation Example 2, and the PI-1 solution was replaced with a PI-3 solution. The soft OLED was removed from the release, and then a current efficiency test was performed, and the results are reported in Table 2.

As can be seen from Table 2, in Comparative Examples 4 to 5 which did not contain the microstructure based on the current efficiency of the glass substrate of Comparative Example 3, the current efficiencies were significantly lower than those of Examples 5 to 10 having microstructures, and the same hemisphere was additionally obtained. In the microstructured substrate, the multilayered composite comparative example 6 has a current efficiency which is also significantly lower than that of the examples 6, 8, and 10, which shows that the present invention does not require additional attaching of the light-extracting film, and the simple structure and process method are provided. A high light extraction efficiency can be obtained.

10‧‧‧Support carrier

11‧‧‧ release layer

11a‧‧‧ first surface

11b‧‧‧ second surface

11c‧‧‧First microstructure

12c‧‧‧Second microstructure

12‧‧‧Soft substrate

A1‧‧‧ first area

A2‧‧‧ second area

Claims (22)

A method for fabricating a substrate structure for an electronic component, comprising: forming a release layer having a first surface and a second surface opposite to the support carrier, the release layer having a first area and the release layer Forming a second surface contact on the support carrier; forming a first microstructure on the first surface of the release layer, and curing the release layer such that the release layer has a first adhesion between the support carriers Providing a flexible substrate on the support carrier and the release layer, and the flexible substrate covers the support carrier and the release layer with a second area, wherein the second area is larger than the first area, and the release type The surface of the flexible substrate contacting the first surface of the layer has a second microstructure relative to the first microstructure; and curing the flexible substrate such that the flexible substrate has a second degree of adhesion between the release layers, wherein The first degree of adhesion is greater than the second degree of adhesion. The method of claim 1, wherein the support carrier is at least one selected from the group consisting of glass, quartz, germanium wafers, and metal sheets. The method of claim 1, wherein the release layer is a thermosetting polymer. The method of claim 1, wherein the release layer is selected from the group consisting of polysiloxanes, polyoxyalkylene blends, cycloolefin copolymers, polymethyl methacrylates, and polyamidones. At least one of the group By. The method of claim 1, wherein the first surface of the release layer is embossed with a mold to form a first microstructure before curing the release layer. The method of claim 1, wherein the second microstructure comprises a plurality of protrusions, which are hemispherical, pyramidal, barrel or irregular. The method of claim 6, wherein the protrusion has a size of 1 nm to 1 mm. The method of claim 1, wherein the curing method is heat treatment or UV irradiation. The method of claim 1, wherein the first degree of adhesion is 1B to 5B. The method of claim 1, wherein the flexible substrate is a thermosetting polymer. The method of claim 1, wherein the flexible substrate is selected from the group consisting of polyamidoamine, polycarbonate, polyether oxime, poly raw ene oxide, polyester, polyetheretherketone, and polyether oxime. At least one of the groups consisting of amines. The method of claim 1, wherein the second degree of adhesion is 0B to 1B. A substrate structure for an electronic component, comprising: a support carrier; a release layer having a first area and the release layer having an opposite first surface and a second surface, the release layer being the second surface contact Provided on the support carrier, wherein the first surface has a first microstructure, and the release layer has a first degree of adhesion between the support carriers; and the flexible substrate is disposed on the release layer On a surface, the flexible substrate covers the support carrier and the release layer with a second area having an area larger than the first area, wherein the flexible substrate has a second degree of adhesion between the release layers, and the The first degree of adhesion is greater than the second degree of adhesion, and the surface of the flexible substrate in contact with the first surface of the release layer has a second microstructure relative to the first microstructure. The substrate structure of claim 13, wherein the support carrier is at least one selected from the group consisting of glass, quartz, germanium wafers, and metal sheets. The substrate structure of claim 13, wherein the release layer is a thermosetting polymer. The substrate structure according to claim 13, wherein the release layer is selected from the group consisting of polysiloxanes, polyoxyalkylene mixtures, cycloolefin copolymers, polymethyl methacrylates, and polyamines. At least one of the group consisting of. The substrate structure of claim 13, wherein the first degree of adhesion is 1B to 5B. The substrate structure according to claim 13, wherein the flexible substrate is a thermosetting polymer. The substrate structure according to claim 13, wherein the flexible substrate is selected from the group consisting of polyamidos, polycarbonate, polyether oxime, poly raw ice. At least one of the group consisting of a olefin, a polyester, a polyetheretherketone, and a polyetherimine. The substrate structure of claim 13, wherein the second microstructure comprises a plurality of protrusions, which are hemispherical, pyramidal, barrel or irregular. The substrate structure of claim 13, wherein the protrusion has a size of 1 nm to 1 mm. The substrate structure of claim 13, wherein the second degree of adhesion is 0B to 1B.