TW201620128A - Light emitting diode illumination device - Google Patents

Abstract

A light emitting diode illumination device includes a circuit board having a plurality of contacts arranged at intervals; and a plurality of first and second light emitting diodes alternately arranged on the circuit board and respectively including a transparent substrate, a first die and second die arranged on the transparent substrate at intervals, and two metal conductive layers. Each die includes: a first-type semiconductor layer containing a platform and a protruded post adjacent to each other, an active layer arranged on the platform, and a second-type semiconductor layer arranged on the active layer without contacting the protruded post. The top surface of the protruded post of each die is equal to the top surface of the second-type semiconductor layer in height. The platforms of the first and second dies of each light emitting diode are extended mutually in opposite direction from the protruded posts thereof. Each of the metal conductive layers is connected to the top surface of the protruded posts of the adjacent dies and the top surface of the second-type semiconductor layer, and bonded to every two adjacent contacts. Every two adjacent light emitting diodes share the same one contact.

Description

Light-emitting diode lighting device

The invention relates to a lighting device, in particular to a lighting diode lighting device.

In recent years, based on the evolution of technology, the application of light-emitting diodes has been greatly improved; among them, the development of AC-type light-emitting diodes is the most significant. Since the AC type light-emitting diode is easy to use, it has become a new darling of a large number of global manufacturers to invest in research and development. However, AC-type LEDs are mostly high-power LEDs that must be operated at high currents. In addition, the substrate (eg, sapphire) used to deflect the semiconductor layer of the light-emitting diode has low thermal conductivity, so that the high heat generated by the light-emitting diode under high-power driving is accumulated in the light-emitting diode. On the substrate of the polar body. In order to solve the problem that the heat dissipation of the substrate is not easy, the technical field has also developed a flip-chip structure of a flip chip LED to solve the problem of heat dissipation.

Referring to FIG. 1, the invention patent case of the Republic of China No. I419359, the invention discloses a conventional AC-type flip chip LED 1, comprising an integrated circuit board 11, a first LED chip 12, and a second illumination. The diode chip 13, a first bump group 14, and a second bump group 15.

The integrated circuit board 11 includes a pair of left side diodes 111 and a pair of right side diodes that are laterally spaced apart from each other on the surface of the integrated circuit board 11. 112. An insulating layer 113 disposed on the surface of the integrated circuit board 11 between the pair of left side diodes 111 and the pair of right side diodes 112, and a contact block 114 disposed on the insulating layer 113. The pair of left diodes 111 are disposed in a laterally and horizontally mirror-symmetrical manner, and the pair of right-hand diodes 112 are also disposed symmetrically and horizontally symmetrically with each other, and each of the left-side diodes 111 and each of the right-side diodes 112 has a shape as shown in FIG. 1 . One of the P-type semiconductors and one N-type semiconductor is shown.

The first LED chip 12 and the second LED chip 13 each include a transparent substrate 121, 131, a semiconductor epitaxial layer 122, 132, an N-type electrode layer 125, 135, and a P-type Electrode layers 126, 136. Each of the semiconductor epitaxial layers 122, 132 is disposed on each of the transparent substrates 121, 131 and has a platform 123, 133 and a stud 124, 134 adjacent to the platforms 123, 133. Each of the N-type electrode layers 125, 135 contacts each of the stages 123, 133, and each of the P-type electrode layers 126, 136 contacts the respective posts 124, 134.

The first bump group 14 has an N-type bump 141 connected to the contact block 114 of the integrated circuit board 11, and a P-type bump 142 connecting the pair of left diodes 111 of the integrated circuit board 11. . The second bump group 15 has an N-type bump 151 connected to the pair of right side diodes 112 of the integrated circuit board 11, and a P-type bump 152 connected to the contact block 114 of the integrated circuit board 11. . The first LED wafer 12 and the second LED wafer 13 are flipped 180° and then passed through a flip chip process to form the first LED wafer 12 . The N-type electrode layer 125 and the P-type electrode layer 126 are respectively connected to the N-type bump 141 and the P-type bump 142 of the first bump group 14 and make the N-type of the second LED wafer 13 Electricity The pole layer 135 and the P-type electrode layer 136 are respectively connected to the N-type bump 151 and the P-type bump 152 of the second bump group 15.

When the integrated circuit board 11 is connected to an alternating current power source, the alternating current power source supplies a bidirectional current to the pair of left side diodes 111 and the pair of right side diodes 112 to enable the light emitting diode chips 12, 13 A series circuit is formed through the first bump group 14, the contact block 114 on the integrated circuit board 11, and the second bump group 15, so that the bidirectional current flows through the LED chips 12, respectively. The semiconductor epitaxial layers 122, 132 of 13 are such that the respective semiconductor epitaxial layers 122, 132 are respectively illuminated to emit light from the respective transparent substrates 121, 131, respectively.

Although the existing AC flip chip LED 1 can solve the problem of heat dissipation. However, since the light-emitting diode chips 12 and 13 are connected in series, once the light-emitting diode chips 12 and 13 of the light-emitting diode chips 12 and 13 fail, the bidirectional current cannot be made to flow. Therefore, when the existing AC-type flip-chip LED 1 is further applied to a lighting device, the failure rate of the lighting device is also increased. In addition, as is apparent from the structure shown in FIG. 1, since there is a height difference between the platforms 123, 133 of the semiconductor epitaxial layers 122, 132 of the respective LED chips 12, 13 and the posts 124, 134, in order to achieve the overlying For the purpose of the crystal, it is still necessary to compensate for the height difference by thickening the electrode layers, or even the bump groups 14, 15. In terms of process cost, both the thickened electrode layers or the bump sets 14, 15 increase consumables and time costs. As far as the yield on the process is concerned, the existing AC-type flip-chip diode 1 has a complicated procedure, and the bump groups 14 and 15 are still needed; therefore, the process yield is also derived. The problem of falling.

According to the above description, in view of the demand of the AC type light-emitting diode, the problem of heat dissipation and failure rate of the light-emitting diode can be solved, and the cost of consumables and time can be reduced and the process yield can be maintained. The problem that the relevant technical personnel are to break through.

Accordingly, it is an object of the present invention to provide a light emitting diode lighting device.

Therefore, the LED lighting device of the present invention comprises a circuit board, a plurality of first light emitting diodes and a plurality of second light emitting diodes. The circuit board includes a thermally conductive plate body and a conductive line. The conductive line has a plurality of contacts disposed on one surface of the thermally conductive plate body at intervals. The first light emitting diodes and the second light emitting diodes are sequentially disposed on the circuit board in turn, and respectively include a light transmissive substrate, at least one first crystal grain, and at least one second crystal grain. And a metal conductive layer. The first die and the second die of each of the first LEDs and the second die are spaced apart from each other along a first direction on the transparent substrate, and each of the first die and each The second die has a first type semiconductor layer, an active layer and a second type semiconductor layer, respectively. The first type semiconductor layer of each of the first die and the second die is disposed on the transparent substrate of the light emitting diode, and has a platform and a protrusion adjacent to the platform. The active layer of each of the first die and each of the second die is disposed on the platform. The second semiconductor layer of each of the first die and each of the second die is disposed on the active layer and is not in contact with the stud of the first type semiconductor layer, and each of the first die and each of the second die The The top surface of one of the second type semiconductor layers is substantially equal in height to a top surface of the stud of the first type semiconductor layer.

In the present invention, the platform of the first type semiconductor layer of the first die of each of the light emitting diodes extends from the stud along a second direction, and the first of the second die of each of the light emitting diodes The platform of the semiconductor layer extends from the protrusion in a direction opposite to the second direction; the first direction and the second direction are at a predetermined angle to each other; the two metal conductive layers of each of the LEDs are respectively connected to the first a top surface of the pillar of the first type semiconductor layer of the die and a top surface of the second type semiconductor layer of the second die, and a top surface of the second type semiconductor layer of the first die and a first type of the second die a top surface of the stud of the semiconductor layer; the metal conductive layers of each of the light emitting diodes are respectively attached to each of the two adjacent contacts, and each of the two adjacent light emitting diodes share the same contact; The metal conductive layers of the diode and the contacts, in order to sequentially connect the light emitting diodes to each other after power supply; and when the first light emitting diodes and the second light emitting diodes After the power is supplied, a first band and a second band of light can be respectively emitted and a mixed light is generated

The effect of the present invention is that the top surface of each of the second type semiconductor layers is substantially higher than the top surface of the pillars of each of the first type semiconductor layers, in addition to facilitating the light-emitting diode through the flip chip process to solve the heat dissipation problem. It also avoids the need for additional consumables (bumps) and process man-hours, which reduces costs and simplifies process and increases process yield. Another effect is that the light of the first wavelength band and the second wavelength band respectively emitted by the first light emitting diode and the second light emitting diodes achieve the effect of light mixing.

2‧‧‧ boards

21‧‧‧ Thermal Conductivity Plate Body

22‧‧‧Electrical circuit

221‧‧‧Contacts

222‧‧‧First external node

223‧‧‧Second external node

224‧‧‧Wire

3‧‧‧First light-emitting diode

30‧‧‧Transparent substrate

31‧‧‧First grain

311‧‧‧First type semiconductor layer

312‧‧‧ active layer

313‧‧‧Second type semiconductor layer

314‧‧‧current diffusion layer

315‧‧‧ platform

316‧‧‧Bump

32‧‧‧Second grain

321‧‧‧First type semiconductor layer

322‧‧‧ active layer

323‧‧‧Second type semiconductor layer

324‧‧‧current diffusion layer

325‧‧‧ platform

326‧‧‧Bump

33‧‧‧Metal conductive layer

34‧‧‧Insulators

35‧‧‧ trench

4‧‧‧Second light-emitting diode

40‧‧‧Transparent substrate

41‧‧‧First grain

411‧‧‧First type semiconductor layer

412‧‧‧ active layer

413‧‧‧Second type semiconductor layer

414‧‧‧current diffusion layer

415‧‧‧ platform

416‧‧‧Bump

42‧‧‧Second grain

421‧‧‧First type semiconductor layer

422‧‧‧ active layer

423‧‧‧Second type semiconductor layer

424‧‧‧current diffusion layer

425‧‧‧ platform

426‧‧‧Bump

43‧‧‧Metal conductive layer

44‧‧‧Insulators

45‧‧‧ trench

5‧‧‧ Third Light Emitting Diode

50‧‧‧Transparent substrate

51‧‧‧First grain

511‧‧‧First type semiconductor layer

512‧‧‧ active layer

513‧‧‧Second type semiconductor layer

514‧‧‧current diffusion layer

515‧‧‧ platform

516‧‧‧Bump

52‧‧‧Second grain

521‧‧‧First type semiconductor layer

522‧‧‧ active layer

523‧‧‧Second type semiconductor layer

524‧‧‧current diffusion layer

525‧‧‧ platform

526‧‧‧Bump

53‧‧‧Metal conductive layer

54‧‧‧Insulators

55‧‧‧ trench

6‧‧‧Constant current unit

61‧‧‧ constant current parts

9‧‧‧AC power supply

X‧‧‧ first direction

Y‧‧‧second direction

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a partial cross-sectional view illustrating a conventional AC flip chip light emitting diode; FIG. 2 is a top view BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a partial cross-sectional view of a light-emitting diode illuminating device of the present invention; FIG. 3 is a partial cross-sectional view taken along line III-III of FIG. Figure 5 is a front elevational view of Figure 4; Figure 6 is a front right side view of Figure 4; Figure 7 is a right side view taken along line VII-VII of Figure 4; 8 is a right side view taken along line VIII-VIII of FIG. 4; FIG. 9 is a right side view taken along line IX-IX of FIG. 4; FIG. 10 is an equivalent circuit diagram illustrating the first aspect of the present invention The plurality of first light emitting diodes, the plurality of second light emitting diodes, and the plurality of third light emitting diodes are sequentially connected in series with each other; FIG. 11 is a top plan view illustrating one of the light emitting diode lighting devices of the present invention Second embodiment; FIG. 12 is a bottom view showing the second embodiment of the present invention An arrangement relationship between two first crystal grains and two second crystal grains in a plurality of first light emitting diodes, a plurality of second light emitting diodes, and a plurality of third light emitting diodes in the embodiment (only shown in the figure Each of the first, second, and third light emitting diodes; FIG. 13 is an equivalent circuit diagram illustrating the second embodiment of the present invention The first light emitting diodes, the second light emitting diodes, and the third light emitting diodes are sequentially connected in series with each other.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 2, FIG. 3 and FIG. 4, the first embodiment of the light-emitting diode lighting device of the present invention is electrically connected to an AC power supply 9. The first embodiment includes a circuit board 2, a plurality of first light emitting diodes 3, a plurality of second light emitting diodes 4, and a plurality of third light emitting diodes 5. The first light-emitting diodes 3, the second light-emitting diodes 4, and the third light-emitting diodes 5 are sequentially disposed on the circuit board 2 in the second direction Y.

The circuit board 2 includes a thermally conductive plate body 21 and a conductive line 22. The conductive line 22 has a plurality of contacts 221 disposed on one surface of the thermally conductive plate body 21 and spaced apart from each other along a second direction Y, a first external node 222, a second external node 223, and a wire 224. . The first external node 222 and the second external node 223 are electrically connected to the two contacts 221 of the contacts 221, respectively. As shown in FIG. 2 and FIG. 3, the two contacts 221 in the contacts 221 refer to the leftmost contact 221 and the rightmost contact 221. More specifically, the first external node 222 is connected to the leftmost contact 221; the second external node 223 is electrically connected to the rightmost contact 221 through the wire 224 (that is, the wire 224 is connected to the rightmost contact 221, and extends from the rightmost contact 221 toward the inside of the thermal conductive plate body 21, and extends opposite to the second direction Y to the adjacent leftmost contact 221 To penetrate the table of the thermal conductive plate body 21 The face is connected to the second external node 223.

As shown in FIG. 4, FIG. 5 and FIG. 6, each of the first LEDs 3, each of the second LEDs 4 and each of the third LEDs 5 respectively comprise a transparent substrate 30, 40. 50. At least one first die 31, 41, 51, at least one second die 32, 42, 52, two metal conductive layers 33, 43, 53 and an insulator 34, 44, 54. In the first embodiment of the present invention, the first light-emitting diodes 3, the second light-emitting diodes 4, and the first crystal grains 31, 41, and 51 in each of the third light-emitting diodes 5 and the first The number of the two crystal grains 32, 42, 52 is explained by taking one example as an example.

The first light-emitting diodes 3, the second light-emitting diodes 4, and the first crystal grains 31, 41, 51 of the third light-emitting diodes 5 and the second crystal grains 32, 42, 52 are A first direction X is spaced apart from each other on the transparent substrate 30, 40, 50, and each of the first LEDs 2, each of the second LEDs 4 and each of the third LEDs 5 The first die 31, 41, 51 and the second die 32, 42, 52 define a trench 35, 45, 55. Each of the insulators 34, 44, 54 is filled in each of the grooves 35, 45, and 55. The first light-emitting diodes 3, the second light-emitting diodes 4, and the first crystal grains 31, 41, 51 of each of the third light-emitting diodes 5 and the first light-emitting diodes 34, 44, and 54 The two dies 32, 42, 52 are completely separated to avoid the problem of short circuit when the circuit is turned on.

Each of the first light-emitting diodes 3, the second light-emitting diodes 4, and the first crystal grains 31, 41, 51 and the second crystal grains 32, 42, 52 of each of the third light-emitting diodes 5, respectively Having a first type semiconductor layer 311, 321, 411, 421, 511, 521, an active layer 312, 322, 412, 422, 512, 522. A second type semiconductor layer 313, 323, 413, 423, 513, 523, and a current spreading layer 314, 324, 414, 424, 514, 524.

The first type semiconductor layers 31, 41, 51 and the first type semiconductor layers 311, 321, 411, 421, 511, 521 of the second crystal grains 32, 42, 52 are disposed on the light emitting diodes 3, 4, 5 above the transparent substrate 30, 40, 50, and has a platform 315, 325, 415, 425, 515, 525, and a column adjacent to the platform 315, 325, 415, 425, 515, 525 316, 326, 416, 426, 516, 526. The active layers 312, 322, 412, 422, 512, 522 of each of the first crystal grains 31, 41, 51 and the respective second crystal grains 32, 42, 52 are disposed on the platforms 315, 325, 415, 425, 515, 525 thereof. on. The second type semiconductor layers 313, 323, 413, 423, 513, 523 of the first crystal grains 31, 41, 51 and the respective second crystal grains 32, 42, 52 are disposed on the active layers 312, 322, 412, 422 thereof. , 512, 522, and is not in contact with the pillars 316, 326, 416, 426, 516, 526 of the first type semiconductor layers 311, 321, 411, 421, 511, 521. a top surface of each of the second type semiconductor layers 313, 323, 413, 423, 513, 523 of each of the first crystal grains 31, 41, 51 and each of the second crystal grains 32, 42, 52, and the first type semiconductor A top surface of the ribs 316, 326, 416, 426, 516, 526 of the layers 311, 321, 411, 421, 511, 521 is substantially equal in height (as shown in Figures 5 and 6).

In the first embodiment of the present invention, the stages 315, 415, 515 of the first type semiconductor layers 311, 411, 511 of the first crystal grains 31, 41, 51 of the light emitting diodes 3, 4, 5 are a first type semiconductor layer 321 , 421 extending from the protrusion 316 , 416 , 516 along the second direction Y and the second die 32 , 42 , 52 of each of the light emitting diodes 3 , 4 , 5 , 521 platform 325, 425, 525, extending from the protrusions 326, 426, 526 opposite to the second direction Y, and the first direction X and the second direction Y are mutually at a predetermined angle. In the first embodiment of the present invention, the first direction X and the second direction Y are perpendicular to each other, and the predetermined angle is equal to 90°; each of the transparent substrates 30, 40, and 50 is an epitaxial substrate, for example. For example, each of the first type semiconductor layers 311, 321, 411, 421, 511, and 521 is an N-type semiconductor layer as an example; each of the second type semiconductor layers 313, 323, 413, 423, 513, and 523 A P-type semiconductor layer is taken as an example for illustration.

Preferably, each platform 315, 325, 415, 425, 515, 525 has a roughened surface for better illumination. Thereby, the contact area between each of the first type semiconductor layers 311, 321, 411, 421, 511, 521 and the active layers 312, 322, 412, 422, 512, 522 is increased, thereby lifting the first crystal grains 31. , 41, 51 and the luminous efficiency of each of the second crystal grains 32, 42, 52. Of course, when the brightness of the first light-emitting diodes 3, the second light-emitting diodes 4, and the third light-emitting diodes 5 of the present invention applied to the illumination device is not high, These roughened surfaces are omitted.

Preferably, each of the first crystal grains 31, 41, 51 and the pillars 316, 416, 516 of the first type semiconductor layers 311, 411, 511, 321, 421, 521 of the second crystal grains 32, 42, 52 The heights of 326, 426, and 526 are between 100 μm and 120 μm, and the first semiconductor layers 31, 41, 51 and the first semiconductor layers 311, 411 of the second crystal grains 32, 42, 52, respectively. The heights of the platforms 315, 415, 515, 325, 425, and 525 of 511, 321, 421, and 521 are between 55 μm and 65 μm, respectively.

Referring to FIG. 7 , FIG. 8 and FIG. 9 , and referring to FIG. 4 , the two metal conductive layers 33 , 43 , 53 of the LEDs 3 , 4 , 5 are respectively connected to the first crystal grains 31 , 41 , The top surface of the first type semiconductor layers 311, 411, 511 of the 51, and the top surface of the second type semiconductor layers 323, 423, 523 of the second die 32, 42, 52, and the first thereof The top surfaces of the second type semiconductor layers 313, 413, 513 of the crystal grains 31, 41, 51 and the pillars 326, 426, 526 of the first type semiconductor layers 321, 421, 521 of the second crystal grains 32, 42, 52 surface. The current diffusing metal layers 314, 414, 514 of the first crystal grains 31, 41, 51 and the current diffusing metal layers 324, 424, 524 of the respective second crystal grains 32, 42, 52 are respectively disposed on the respective first crystals The second semiconductor layers 313, 413, 513 of the particles 31, 41, 51 and the second semiconductor layers 323, 423, 523 of the respective second crystal grains 32, 42, 52, and the same as the first first crystal grains 31 The platforms 315, 415, 515 of the first semiconductor layers 311, 413, 513 of the 41, 51 and the platforms 325, 425 of the first semiconductor layers 321, 423, 523 of the second die 32, 42, 52, The 525 is extended to connect the two metal conductive layers 33, 43, and 53 of the respective light-emitting diodes 3, 4, and 5, respectively.

Referring to FIG. 4, each of the LEDs 3, 4, and 5 is flipped by 180° to be in the manner shown in FIG. 2 and FIG. 3, and is subjected to a flip chip process to make each of the LEDs 3, 4, The two metal conductive layers 33, 43, and 53 of the fifth layer are sequentially attached to each of the two adjacent contacts 221 in turn along the second direction Y. Each of the two adjacent first light-emitting diodes 3 and the second light-emitting diodes 4 share the same contact point 221, and each two adjacent second light-emitting diodes 4 and the third light-emitting diode body 5 share the same contact point. 221, and each two adjacent third LEDs 5 share the same contact 221 with the first LEDs 3. Through the light-emitting diodes 3, 4, 5 and the contacts 221, in order to sequentially connect the light-emitting diodes 3, 4, 5 to each other after power supply.

According to the above detailed description and with reference to the structures shown in FIG. 4 and FIG. 5, the present invention is based on the first crystal grains 31, 41, 51 and the second crystal grains 32 of each of the light-emitting diodes 3, 4, and 5. The protrusions 316, 326, 416, 426, 516, 526 of the first type semiconductor layers 311, 321, 411, 421, 511, 521 of 42, 52 are higher than the second type semiconductor layers 313, 323, 413 thereof, The advantages of the special epitaxial structure of the top surface of 423, 513, and 523, and the platforms 315, 415, and 515 of the first type semiconductor layers 311, 411, and 511 of the first light-emitting crystal grains 31, 41, 51, and the second The geometrical arrangement of the platforms 325, 425, 525 of the first type semiconductor layers 321, 421, 521 of the light-emitting crystal grains 32, 42, 52 is opposite to each other, such that the two of the light-emitting diodes 3, 4, 5 The first conductive grains 33, 43, and 53 can simultaneously connect the first die 31 of each of the first LEDs 3 and the second die 32, and the first die 41 of each of the second LEDs 4 The second die 42 is connected in parallel with the second die 42 and the first die 51 of each of the third LEDs 5 is connected in parallel with the second die 52.

In addition, the present invention is further based on the above-mentioned contoured special epitaxial structure, thereby facilitating the light-emitting diode to avoid the extra cost and process to configure the bumps when the through-chip flipping process is used to solve the heat dissipation problem. The effect of the contour. Therefore, the cost of consumables and time can be reduced, and the yield can be improved by the simplification of the process.

In addition, referring to FIG. 2, FIG. 3 and FIG. 4, the P-type semiconductor layers of each of the first crystal grains 31, 41, 51 (ie, the second-type semiconductor layers 313, 413, 513) are located on the right side, and each second. P-type semiconductor layer of crystal grains 32, 42, 52 (ie, the second type semiconductor layers 323, 423, 523) are located on the left side. Therefore, the current flow directions of the respective first crystal grains 31, 41, 51 and the respective second crystal grains 32, 42, 52 are from right to left and from left to right, respectively. In general, the special epitaxial structures of the first crystal grains 31, 41, 51 and the second crystal grains 32, 42, 52 in the respective light-emitting diodes 3, 4, 5 of the present invention can be obtained without polarity Dual-conducting features. Therefore, the LED lighting device of the present invention can be illuminated directly by the AC current supply 9 without using an operating environment to the rectifier.

In the first embodiment of the LED lighting device of the present invention, the AC power supply 9 is in communication with the first external node 222 and the second external node 223 of the conductive line 22 of the circuit board 2. An alternating current flows from the AC power supply 9 through the first external node 222, sequentially through each contact 221 of the conductive line 22, and through the contacts 221 and the LEDs 3, 4, 5 of the metal conductive layers 33, 43, 53 sequentially flow through the first light-emitting diode 3, the second light-emitting diode 4 and the third light-emitting diode 5 which are arranged alternately with each other, in order The light-emitting diodes 3, 4, 5 are connected in series with each other after power supply, and sequentially flow through the wire 224 and the second external node 223 from the rightmost contact 221 to flow from the second external node 223. The AC power supply 9 is connected to form a complete circuit as shown in FIG.

In more detail, referring to FIG. 3, FIG. 4 and FIG. 5, when a reverse current (ie, opposite to the second direction Y) current (not shown) passes through the contacts 221 and the alternating current The metal conductive layers 33, 43, and 53 of the light-emitting diodes 3, 4, and 5 sequentially flow through the third light-emitting diode 5, and the second light-emitting In the diode 4 and the first LED 3, the reverse current is transmitted from the contact 221 (the junction 221 at the far right of FIG. 3) through the metal conductive layer 53 of the third LED 5 ( The metal conductive layer 53 on the right side of FIG. 4 sequentially flows through the current diffusion metal layer 514 of the first die 51 of the third LED 5, the second semiconductor layer 513, the active layer 512, and the first a stud 516 of the semiconductor layer 511 and the metal conductive layer 53 (the metal conductive layer 53 on the left side of FIG. 4) radiate a third wavelength band and transmit light through the third LED 5 The substrate 50 is emitted to the outside; at the same time, the second die 52 of the third LED 5 is in a non-conducting state. The reverse-current flows through the rightmost third light-emitting diodes based on the light-emitting diodes 3, 4, and 5 passing through the metal conductive layers 33, 43, and 53 and the contacts 221 after being powered. After the left metal conductive layer 53 of the polar body 5 emits light of the third wavelength band, the second light emitting diode 4 and the first light emitting diode 3 are sequentially flowed opposite to the second direction Y, and the current The traveling path of the reverse current in the second LED 4 and the first LED 3 is the same as the traveling path of the third LED 5 to emit the second LED 4 Light of a second wavelength band, and causing the first light emitting diode 3 to emit light of a first wavelength band; likewise, at the same time, each of the second light emitting diodes 4 and each of the third light emitting diodes 3 The second crystal grains 42, 32 are in a non-conducting state.

Similarly, referring to FIG. 3, FIG. 4 and FIG. 6, when a forward current (ie, the same direction to the second direction Y) current (not shown) passes through the contacts 221 and the like The metal conductive layers 33, 43, and 53 of the light-emitting diodes 3, 4, and 5 sequentially flow through the first light-emitting diode 3 and the second light-emitting diode 4, In the case of the third light-emitting diode 5, the forward current is transmitted from the contact 221 (the leftmost contact 221 in FIG. 3) through the metal conductive layer 33 of the first light-emitting diode 3 (located on the left side of FIG. 4) The metal conductive layer 33) sequentially flows through the current diffusion metal layer 324 of the second die 32 of the first light emitting diode 3, the second semiconductor layer 323, the active layer 322, and the first semiconductor layer 321 The protruding post 326 and the metal conductive layer 33 (the metal conductive layer 33 on the right side of FIG. 4) radiate the light of the first wavelength band and are transmitted to the outside through the transparent substrate 30 of the first light emitting diode 3. At the same time, the first die 31 of the first LED 3 is in a non-conducting state. The forward-emitting current flows through the leftmost first light-emitting unit based on the light-emitting diodes 3, 4, and 5 through the metal conductive layers 33, 43, and 53 and the contacts 221 after power supply; After the right metal conductive layer 33 of the diode 3 emits light of the first wavelength band, it sequentially flows to the second light emitting diode 4 and the third light emitting diode 5, and is the same as the first light emitting diode The forward current path of the polar body 3 travels to cause the second light emitting diode 4 to emit light of the second wavelength band, and the second crystal grain 52 of the third light emitting diode 5 emits the third wavelength band Similarly, at the same time, the second light-emitting diodes 4 and the first crystal grains 41, 51 of the respective third light-emitting diodes 5 are in a non-conducting state.

In the first embodiment of the present invention, the light of the first wavelength band, the second wavelength band, and the third wavelength band are red light, green light, and blue light, respectively, such that the mixed light is a white light.

It should be noted that the first embodiment of the present invention includes the first light emitting diodes (red light) 3, the second light emitting diodes (green light) 4, and the third light emitting diodes. Polar body (blue light) 5 is mixed with the white light as an example To explain. However, the present invention can also perform the light mixing as described above as needed. That is to say, the present invention can also select the light colors of the light-emitting diodes 3, 4, and 5 to be mixed into white light. For example, the light-emitting diode illuminating device of the present invention may also select only the first light-emitting diode 3 and the second light-emitting diode 4, and each of the first light-emitting diodes 3 and each of the second light-emitting diodes 4 is to emit blue light and yellow light, respectively, to thereby combine into white light.

It is worth mentioning here that the first embodiment of the light-emitting diode lighting device of the present invention further comprises a constant current unit 6. The constant current unit 6 is disposed on the surface of the thermal conductive plate body 21 and is straddle and electrically connected to two adjacent contacts 221 at the most central position among the contacts 221 to be at the center position. The two adjacent contacts 221 cause the light-emitting diodes 3, 4, 5 and the constant current unit 6 to be connected in series with each other. The constant current unit 6 has two constant current members 61 arranged in parallel with each other. Each of the constant current elements 61 is configured to stabilize the forward current and the reverse current of the alternating current, thereby preventing the light-emitting diodes 3, 4, 5 from being input unsteadily due to the alternating current, thereby causing the brightness of the light. The phenomenon of flickering.

According to the detailed description of the first embodiment of the above-mentioned light-emitting diode lighting device, the present invention is based on the special epitaxial structure, and the first light-emitting diodes 3 and the second light-emitting diodes 4 are The third light-emitting diodes 5 can be connected in series with each other through the conductive line 22 on the circuit board 2, and can not only achieve the equivalent of AC high voltage or low voltage lighting, but also do not need to use a voltage step-down, or even Use a bridge stack circuit to convert DC without using a capacitor. Therefore, the usage of many circuit components is saved, the space for the circuit board 2 is saved, and the cost is reduced.

Referring to FIG. 11, FIG. 12 and FIG. 13, a second embodiment of the illuminating diode illuminating device of the present invention is substantially the same as the first embodiment of the illuminating diode illuminating device, and the difference is that The first light-emitting diodes 3, the second light-emitting diodes 4, and the first crystal grains 31, 41, 51 of the third light-emitting diodes 5 and the second crystal grains 32, 42, 52 The number is two.

Therefore, the first of the respective crystal grains 31, 32, 41, 42, 51, 52 based on the first light-emitting diodes 3, the second light-emitting diodes 4, and the third light-emitting diodes 5 The top surfaces of the studs 316, 321 , 416 , 426 , 516 , 526 of the semiconductor layers 311 , 321 , 411 , 421 , 511 , 521 are higher than the second type semiconductor layers 313 , 323 , 413 , 423 , 513 , 523 . a top surface, and a platform 215, 325, 415 of each of the first die 31, 41, 51 and the first semiconductor layers 311, 321, 411, 421, 511, 521 of the second die 32, 42, 52, The geometric configuration relationship in which 425, 515, and 525 extend in opposite directions to each other. Therefore, the metal conductive layer 33 of the first light-emitting diodes 3 can easily simultaneously connect the first crystal grains 31 and the second crystal grains 32 (ie, simultaneously parallel four crystal grains); The metal conductive layer 43 of the two light-emitting diodes 4 can easily simultaneously connect the first crystal grains 41 and the second crystal grains 42 (ie, simultaneously parallel four crystal grains); the third light-emitting diodes The metal conductive layer 53 of 5 can easily simultaneously connect the first crystal grains 51 and the second crystal grains 52 (i.e., simultaneously parallel four crystal grains). Thus, when the alternating current flows, the overall brightness of the light-emitting diode illumination device can be improved.

In addition, the present invention is further based on the parallel relationship imparted by the special epitaxial structure and the aforementioned geometric configuration relationship, so that once they are connected in series The first light-emitting diodes 3, the second light-emitting diodes 4, the first crystal grains 31, 41, 51 of the third light-emitting diodes 5 and the second crystal grains 32, When any of the crystal grains 31, 32, 41, 42, 51, 52 of the faults 42 and 52 fails, the forward current and the reverse current of the alternating current can automatically select the crystal grains 31, 32, 41 which have not failed yet. 42, 51, 52 are used as a bypass to enable the forward current and the reverse alternating current to continue to circulate. Thereby, the failure rate of the light-emitting diode lighting device can be reduced.

In summary, the illuminating diode device of the present invention has the special epitaxial structure (ie, contour design), and the first dies 31, 41 of the illuminating diodes 3, 4, 5, The terraces 315, 415, 515 of the first type semiconductor layers 311, 411, and 511 of 51, and the first type semiconductor layers 321, 421 of the second crystal grains 32, 42, 52 of the respective light emitting diodes 3, 4, The 521's platforms 325, 425, and 525 are in a reversely extending geometric configuration relationship. In addition to facilitating the problem of heat dissipation through the flip chip process, it also avoids the need for additional consumables (bumps) and process man-hours to reduce costs and The process process is simplified, thereby improving the process yield; in addition, the special epitaxial structure and the geometric arrangement relationship can improve the first die 31, 41, 51 and the second die 32, 42, 52 in parallel. The number of the light-emitting diodes 3, 4, 5 connected in series with the conductive lines 22 of the circuit board 2 can also utilize the first and second crystal grains 31 and 32, 41 and 42, 51 and 52. The parallel relationship between the two reduces the failure rate of the LED illumination device and simultaneously transmits the LEDs 3, 4, and 5 The band that can be radiated is used to mix the light color of the desired illumination, so that the object of the present invention can be achieved.

However, the above is only an embodiment of the present invention, when The scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the present invention in the scope of the invention and the patent specification are still within the scope of the invention.

2‧‧‧ boards

21‧‧‧ Thermal Conductivity Plate Body

22‧‧‧Electrical circuit

221‧‧‧Contacts

222‧‧‧First external node

223‧‧‧Second external node

224‧‧‧Wire

3‧‧‧First light-emitting diode

31‧‧‧First grain

32‧‧‧Second grain

33‧‧‧Metal conductive layer

4‧‧‧Second light-emitting diode

41‧‧‧First grain

42‧‧‧Second grain

43‧‧‧Metal conductive layer

5‧‧‧ Third Light Emitting Diode

51‧‧‧First grain

52‧‧‧Second grain

53‧‧‧Metal conductive layer

6‧‧‧Constant current unit

61‧‧‧ constant current parts

9‧‧‧AC power supply

X‧‧‧ first direction

Y‧‧‧second direction

Claims (8)

A light-emitting diode lighting device comprising: a circuit board comprising a heat-conducting plate body; and a conductive circuit having a plurality of spaced-apart contacts on a surface of the heat-conducting plate body; and a plurality of first The light emitting diode and the plurality of second light emitting diodes are sequentially disposed on the circuit board, and each of the first light emitting diodes and each of the second light emitting diodes respectively comprise a transparent substrate, at least a first die, at least one second die, and a second metal conductive layer, the first die and the second die of each of the first LEDs and the second die The first die and the second die respectively have a first type semiconductor layer disposed on the light transmissive substrate of the light emitting diode and have a platform. And a pillar disposed adjacent to the platform, an active layer disposed on the platform, and a second type semiconductor layer disposed on the active layer and not in contact with the pillar of the first type semiconductor layer, a top surface of one of the second type semiconductor layers and the first type of semiconductor a top surface of the pillars of the layer is substantially equal in height, wherein a platform of the first type semiconductor layer of the first die of each of the light emitting diodes extends from a pillar along a second direction, and each of the light emitting a platform of the first type semiconductor layer of the second die of the diode is extended from the pillar opposite to the second direction, the first side Forming a predetermined angle with the second direction, wherein the two metal conductive layers of each of the light emitting diodes are respectively connected to the top surface of the pillar of the first type semiconductor layer of the first die and the second die thereof a top surface of the second type semiconductor layer, a top surface of the second type semiconductor layer of the first die and a top surface of the pillar of the first type semiconductor layer of the second die; wherein the two metal of each of the light emitting diodes The conductive layers are respectively attached to each of the two adjacent contacts, and each of the two adjacent light-emitting diodes share the same contact, and the metal conductive layers passing through the light-emitting diodes and the contacts are respectively The light emitting diodes are sequentially connected in series after being powered; and wherein the first light emitting diodes and the second light emitting diodes are respectively powered to emit a first wavelength band and a second color The light in the band and thus produces a mixed light. The illuminating diode illuminating device of claim 1, further comprising a plurality of third illuminating diodes, the first illuminating diodes, the second illuminating diodes, and the third illuminating dipoles The third light emitting diode includes a light transmissive substrate, at least one first crystal grain, at least one second crystal grain, and two metal conductive layers, and each of the third light emitting bodies is disposed on the circuit board in turn. The first die and the second die of the diode are spaced apart from each other along the first direction on the transparent substrate, and each of the first die and each of the second die respectively has: a first type semiconductor a layer disposed on the transparent substrate of the third light emitting diode, and having a platform and a stud adjacent to the platform; An active layer disposed on the platform; and a second type semiconductor layer disposed on the active layer and not in contact with the stud of the first type semiconductor layer, and one of the top surfaces of each of the second type semiconductor layers a top surface of the stud of the first type semiconductor layer is substantially equal; the platform of the first type semiconductor layer of the first die of each of the third light emitting diodes extends from the stud along the second direction, And the platform of the first type semiconductor layer of the second die of each of the third light emitting diodes is opposite to the second direction of the protruding column; the two metal conductive layers of each of the third light emitting diodes are respectively a top surface of the pillar of the first type semiconductor layer connecting the first die and a top surface of the second type semiconductor layer of the second die thereof, and a top surface of the second type semiconductor layer of the first die and a second crystal thereof a top surface of the pillar of the first semiconductor layer of the grain; wherein the first light emitting diode, the second light emitting diode, and the second metal conductive layer of the third light emitting diode are sequentially Each of the two adjacent first light-emitting diodes and the second light-emitting diode are alternately attached to each of the two adjacent contacts in turn. Sharing the same contact, each two adjacent second light emitting diodes share the same contact with the third light emitting diode, and each two adjacent third light emitting diodes share the same one with the first light emitting diode a contact; and wherein the third light-emitting diodes emit a third wavelength of light after being powered. The light-emitting diode lighting device of claim 2, wherein the light of the first wavelength band, the second wavelength band, and the third wavelength band are red light, green light, and blue light, respectively, such that the mixed light is a white light. . A light-emitting diode lighting device according to claim 1 or claim 2, The number of the first crystal grains and the second crystal grains in each of the first light-emitting diodes, the second light-emitting diodes, and the third light-emitting diodes are respectively two. The illuminating diode illuminating device of claim 1 or claim 2, wherein the first illuminating diode, the second illuminating diode, and each of the third illuminating diodes The height of the pillars of the first type semiconductor layer of a single crystal grain and each of the second crystal grains is between 100 μm and 120 μm, and the first crystal grains and the first semiconductor layer of each of the second crystal grains are on the platform The heights are between 55 μm and 65 μm, respectively. The illuminating diode lighting device of claim 1 or claim 2, wherein each of the platforms has a roughened surface. The illuminating diode illuminating device of claim 1 or claim 2, wherein each of the first illuminating diodes, each of the second illuminating diodes and each of the third illuminating diodes further comprises an insulator, and Each of the first light-emitting diodes, the second light-emitting diodes, and the first light-emitting diodes and the second light-emitting diodes define a trench therebetween, and each of the insulators is filled in each Groove. The illuminating diode illuminating device of claim 1 or claim 2, wherein the first illuminating diode, the second illuminating diode, and each of the third illuminating diodes Each of the die and each of the second illuminating dies further has a current spreading metal layer, and each of the current diffusing metal layers is disposed on each of the second semiconductor layers and extends toward the platform of each of the first semiconductor layers. The two metal conductive layers of the respective light emitting diodes are respectively connected.