TW201618226A - Unit for supporting substrate - Google Patents
Unit for supporting substrate Download PDFInfo
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- TW201618226A TW201618226A TW104128601A TW104128601A TW201618226A TW 201618226 A TW201618226 A TW 201618226A TW 104128601 A TW104128601 A TW 104128601A TW 104128601 A TW104128601 A TW 104128601A TW 201618226 A TW201618226 A TW 201618226A
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- tray
- chuck
- substrate
- mounting unit
- substrate mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係關於安裝於基板處理裝置的基板載置單元，更詳細而言，係關於一種能夠恆定地保持借助於夾鉗而固定的卡盤與托盤間的間隔的基板載置單元。 The present invention relates to a substrate mounting unit mounted on a substrate processing apparatus, and more particularly to a substrate mounting unit capable of constantly maintaining a space between a chuck and a tray fixed by a clamp.
一般而言，在用於半導體的基板及要求精密的薄膜加工步驟中，使用利用等離子體的蝕刻和蒸鍍法，提高生產製品的精密度。 In general, in a substrate for a semiconductor and a process requiring a precise thin film, etching and vapor deposition using plasma are used to improve the precision of the produced product.
如上所述，產生等離子體的等離子體處理裝置由形成外形的腔和設置於腔的外側上部的天線及使基板放置於腔內部的卡盤構成，借助於由天線供應的高頻，在腔內部形成等離子體，對放置於卡盤的基板進行加工。 As described above, the plasma processing apparatus for generating plasma is constituted by a cavity forming an outer shape and an antenna provided on an outer upper portion of the cavity and a chuck for placing the substrate inside the cavity, by means of a high frequency supplied from the antenna, inside the cavity A plasma is formed to process the substrate placed on the chuck.
但是，這種等離子體加工裝置把一個基板放置於卡盤進行加工，因而在加工多個基板時，作業時間需要較長，存在生產率降低的問題。 However, such a plasma processing apparatus places one substrate on a chuck for processing, and therefore, when processing a plurality of substrates, the work time needs to be long, and there is a problem that productivity is lowered.
因此，最近為了能夠同時加工多個基板，開發了一種技術，在卡盤上部利用夾鉗固定供多個基板載置的圓盤狀的托盤，同時加工多個基板，從而提高生產率。 Therefore, recently, in order to be able to process a plurality of substrates at the same time, a technique has been developed in which a disk-shaped tray on which a plurality of substrates are placed is fixed by a clamp at the upper portion of the chuck, and a plurality of substrates are processed at the same time, thereby improving productivity.
圖1是用於說明以往托盤的變形及由此導致的溫度偏差的圖。 Fig. 1 is a view for explaining deformation of a conventional tray and temperature deviation caused thereby.
如圖1所示，當利用夾鉗300而固定托盤200與卡盤100時， 力集中於供夾鉗300安裝的托盤200的外周面，因而在托盤200中發生諸如彎曲的變形，發生托盤200與卡盤100間的間隔越靠近托盤200的中心越變寬的現象。 As shown in FIG. 1, when the tray 200 and the chuck 100 are fixed by the clamp 300, The force concentrates on the outer peripheral surface of the tray 200 to which the clamp 300 is mounted, and thus deformation such as bending occurs in the tray 200, and the phenomenon that the interval between the tray 200 and the chuck 100 becomes wider toward the center of the tray 200 occurs.
如上所述，如果在托盤200中發生變形，托盤200與卡盤100之間之間隔變寬，則隨著熱傳遞效率下降，在托盤200的中央部溫度(T1)與邊緣部溫度(T2)發生偏差。在中央部由等離子體導致託盤表面溫度上升。 As described above, if the deformation occurs in the tray 200, the interval between the tray 200 and the chuck 100 becomes wider, and the temperature (T1) and the edge portion temperature (T2) in the central portion of the tray 200 decrease as the heat transfer efficiency decreases. A deviation occurred. The temperature of the surface of the tray is raised by the plasma at the center.
如上所述，當在托盤200的中央部與邊緣部發生溫度偏差時，載置於托盤200的基板W根據其載置位置，加工速度相互不同，從而誘發生產的製品的品質偏差及缺陷。 As described above, when the temperature difference occurs between the central portion and the edge portion of the tray 200, the substrate W placed on the tray 200 differs from each other depending on the placement position, and the quality deviation and defects of the produced product are induced.
特別是當卡盤100發揮加熱器作用時，存在與卡盤100間隔狹窄的基板W的邊緣部溫度上升到需要以上而使基板W損傷的問題。 In particular, when the chuck 100 functions as a heater, there is a problem in that the temperature of the edge portion of the substrate W which is narrowed from the chuck 100 rises to a level higher than necessary, and the substrate W is damaged.
以往，為了解決這種問題，針對供托盤載置的卡盤的上面以向上部凸起的曲面形成的裝置，在“等離子體處理方法及等離子體處理用托盤(韓國公開專利KR 2003-0021908)”等中具體公開。 In the past, in order to solve such a problem, a device for forming a curved surface on a top surface of a chuck for mounting on a tray is formed by a plasma processing method and a plasma processing tray (Korean Patent Publication KR 2003-0021908). "It is specifically disclosed."
但是，當以凸出的曲面形成卡盤的上面時，存在如下問題：托盤的變形程度進一步加大，基板無法在托盤上部穩定地載置，從而誘發生產製品不良。 However, when the upper surface of the chuck is formed by the convex curved surface, there is a problem that the degree of deformation of the tray is further increased, and the substrate cannot be stably placed on the upper portion of the tray, thereby inducing a defective product.
另外，載置於托盤彎曲的邊緣部的基板，由於左右傾斜度不同，因此存在生產製品的加工程度非對稱的問題。 Further, since the substrate placed on the edge portion where the tray is bent has different inclinations from the left and right, there is a problem that the degree of processing of the produced product is not uniform.
另一方面，針對使用托盤底面向下方凸出地形成的托盤，在“冷卻效果優秀的等離子體處理裝置用基板托盤及等離子體處理裝置(韓國 公開專利KR 2012-0097667)”等中具體公開。 On the other hand, in the tray formed by the bottom of the tray facing downward, the substrate tray and the plasma processing apparatus for the plasma processing apparatus excellent in cooling effect (Korea The patent KR 2012-0097667) and the like are specifically disclosed.
但是，為了解決由於托盤的厚度、強度及寬度的影響而導致托盤與卡盤之間之間隔加寬的問題，需要形成粘合片、浮雕等追加構成，存在使托盤製造成本上升的問題，由此，熱傳遞氣體無法順利供應至托盤，無法解決誘發生產製品的品質缺陷的問題。 However, in order to solve the problem of widening the interval between the tray and the chuck due to the influence of the thickness, strength, and width of the tray, it is necessary to form an additional structure such as a pressure-sensitive adhesive sheet or a relief, and there is a problem that the manufacturing cost of the tray is increased. Therefore, the heat transfer gas cannot be smoothly supplied to the tray, and the problem of inducing quality defects of the produced product cannot be solved.
現有技術文獻 Prior art literature
專利文獻 Patent literature
專利文獻1：KR 2003-0021908 A (2003. 10. 17.) Patent Document 1: KR 2003-0021908 A (2003. 10. 17.)
專利文獻2：KR 2012-0097667 A (2012. 09. 05.) Patent Document 2: KR 2012-0097667 A (2012. 09. 05.)
本發明正是為了解決如上問題而研發的，提供一種能夠同時載置多個基板並處理，且使各個基板間的溫度偏差最小化的基板載置單元。 The present invention has been made in order to solve the above problems, and provides a substrate mounting unit capable of simultaneously mounting a plurality of substrates and performing processing while minimizing temperature deviation between the substrates.
另外，提供一種在利用夾鉗固定托盤與卡盤時，能夠使托盤的變形最小化的基板載置單元。 Further, there is provided a substrate mounting unit capable of minimizing deformation of a tray when the tray and the chuck are fixed by a clamp.
本發明一個實施例的基板載置單元的特徵在於，包括：卡盤，其設置於基板處理裝置的腔內部；托盤，其供基板載置，設置於所述卡盤平面；及夾鉗，其對所述卡盤與托盤的邊緣加壓並固定；在所述托盤的底面中心或所述卡盤的平面中心凸出形成有凸出部。 A substrate mounting unit according to an embodiment of the present invention includes: a chuck disposed inside a cavity of the substrate processing apparatus; a tray mounted on the substrate, disposed on the chuck plane; and a clamp The chuck and the edge of the tray are pressed and fixed; a projection is formed at a center of the bottom surface of the tray or a plane of the plane of the chuck.
此外，所述凸出部與所述托盤形成為一體，在其中心形成有沿上下方向貫通的氣體流路，在其底面形成有以所述氣體流路為中心呈放 射狀形成的一個以上的氣體流動槽亦可。 Further, the protruding portion is formed integrally with the tray, and a gas flow path penetrating in the vertical direction is formed at a center thereof, and a bottom surface of the gas flow path is formed on the bottom surface thereof. One or more gas flow grooves formed by the spray may also be used.
此外，所述凸出部與所述卡盤形成為一體，在其平面形成有呈放射狀形成的一個以上的氣體流動槽亦可。 Further, the protruding portion may be formed integrally with the chuck, and one or more gas flow grooves formed radially may be formed on a flat surface thereof.
此外，所述凸出部以圓板形狀形成，其直徑形成為所述托盤直徑的1/2以下亦可。 Further, the protruding portion is formed in a circular plate shape, and the diameter thereof may be 1/2 or less of the diameter of the tray.
此外，本發明一個實施例的基板載置單元還可以包括圓板形狀的托盤蓋，其具有多個基板處理孔，並蓋住所述托盤上部亦可。 Furthermore, the substrate mounting unit according to an embodiment of the present invention may further include a disk-shaped tray cover having a plurality of substrate processing holes and covering the upper portion of the tray.
此外，所述托盤蓋形成有變形防止部，所述變形防止部沿其外周面向下方延長，與所述卡盤的平面接觸，以便能夠防止所述托盤邊緣部的變形亦可。 Further, the tray cover is formed with a deformation preventing portion which is extended downward along the outer circumferential surface thereof and is in contact with the plane of the chuck so that deformation of the edge portion of the tray can be prevented.
根據本發明的實施例，當使多個基板同時載置於托盤並處理時，使因托盤與卡盤之間之間隔變化而發生的基板間的溫度偏差最小化，從而具有能夠提高生產率並提高生產基板的品質的效果。 According to the embodiment of the present invention, when a plurality of substrates are simultaneously placed on the tray and processed, the temperature deviation between the substrates due to the change in the interval between the tray and the chuck is minimized, thereby improving productivity and improving The effect of producing the quality of the substrate.
另外，具有能夠使托盤的變形最小化，使基板間的溫度偏差最小化，提高托盤壽命的效果。 In addition, it has the effect of minimizing deformation of the tray, minimizing temperature deviation between the substrates, and improving the life of the tray.
另外，在凸出部中形成氣體流路及氣體流動槽，以使熱傳遞氣體順利供應至托盤，從而具有防止基板間的溫度偏差，使不良的發生最小化的效果。 Further, the gas flow path and the gas flow groove are formed in the protruding portion to smoothly supply the heat transfer gas to the tray, thereby having an effect of preventing temperature deviation between the substrates and minimizing occurrence of defects.
W‧‧‧基板 W‧‧‧Substrate
100‧‧‧卡盤 100‧‧‧ chuck
110‧‧‧第一氣體流動孔 110‧‧‧First gas flow hole
200‧‧‧托盤 200‧‧‧Tray
210‧‧‧基板載置部 210‧‧‧Substrate Mounting Department
230‧‧‧第二氣體流動孔 230‧‧‧Second gas flow hole
300‧‧‧夾鉗 300‧‧‧ clamp
400‧‧‧凸出部 400‧‧‧ protruding parts
410‧‧‧氣體流路 410‧‧‧ gas flow path
420‧‧‧氣體流動槽 420‧‧‧Gas flow cell
500‧‧‧托盤蓋 500‧‧‧Tray cover
510‧‧‧變形防止部 510‧‧‧Deformation Prevention Department
530‧‧‧基板處理孔 530‧‧‧Substrate processing hole
圖1是用於說明以往托盤的變形及由此導致的溫度偏差的圖， 圖2是顯示本發明一個實施例的托盤的底面的立體圖，圖3是顯示本發明另一個實施例的卡盤的平面的圖，圖4是用於說明本發明第一實施例的基板載置單元的剖面圖，圖5是用於說明本發明第二實施例的基板載置單元的剖面圖，圖6是用於說明本發明第三實施例的基板載置單元的剖面圖，圖7是用於說明本發明第四實施例的基板載置單元的剖面圖，圖8是用於說明本發明第五實施例的基板載置單元的剖面圖，圖9是用於說明本發明第六實施例的基板載置單元的剖面圖，圖10是用於說明利用本發明一個實施例的基板載置單元處理基板時的溫度偏差的圖，圖11是顯示利用以往基板載置單元和本發明一個實施例的基板載置單元處理基板時，分別載置於托盤中心部與邊緣區域的基板的處理狀態的照片。 Fig. 1 is a view for explaining deformation of a conventional tray and temperature deviation caused thereby, 2 is a perspective view showing a bottom surface of a tray according to an embodiment of the present invention, FIG. 3 is a plan view showing a chuck of another embodiment of the present invention, and FIG. 4 is a substrate for explaining the first embodiment of the present invention. FIG. 5 is a cross-sectional view showing a substrate mounting unit according to a second embodiment of the present invention, and FIG. 6 is a cross-sectional view showing a substrate mounting unit according to a third embodiment of the present invention, and FIG. FIG. 8 is a cross-sectional view for explaining a substrate mounting unit according to a fifth embodiment of the present invention, and FIG. 9 is a cross-sectional view for explaining a substrate mounting unit according to a fifth embodiment of the present invention, and FIG. 9 is a sixth embodiment for explaining the present invention. FIG. 10 is a cross-sectional view showing a substrate mounting unit according to an example of the present invention, and FIG. 10 is a view for explaining a temperature deviation when the substrate is processed by the substrate mounting unit according to the embodiment of the present invention, and FIG. 11 is a view showing a conventional substrate mounting unit and the present invention. When the substrate mounting unit of the embodiment processes the substrate, a photograph of the processing state of the substrate placed on the center portion and the edge region of the tray is performed.
下面參照附圖，詳細說明本發明的較理想實施例，但本發明並非由實施例限制或限定。作為參考，在本說明中，相同的符號指稱實質上相同的要素，在這種規則下，可以引用在其它附圖中記載的內容進行說明，可以省略判斷為對於所屬技術領域的技術人員來說顯而易見的或者重複的內容。 The preferred embodiments of the present invention are described in detail below with reference to the drawings, but the invention is not limited or limited by the embodiments. For reference, in the description, the same symbols refer to substantially the same elements, and in the case of the rules, the descriptions in the other drawings may be cited, and the judgment may be omitted for those skilled in the art. Obvious or repetitive content.
本發明一個實施例的基板載置單元包括：卡盤100，其設置於基板處理裝置的腔內部；托盤200，其載置於卡盤100上部，在其平面上供多個基板W載置；及夾鉗300，其使托盤200與卡盤100結合固定。 A substrate mounting unit according to an embodiment of the present invention includes: a chuck 100 disposed inside a cavity of the substrate processing apparatus; and a tray 200 placed on an upper portion of the chuck 100, on which a plurality of substrates W are placed; And a clamp 300 that secures the tray 200 to the chuck 100.
其特徵在於，當利用夾鉗300對卡盤100與托盤200的邊緣部加壓並固定時，托盤200的中心發生向上方凸起的變形，因而導致在中心部，托盤200與卡盤100之間之間隔增加，在托盤200與卡盤100的中心部凸出形成有對此進行補償的凸出部400，使多個基板W間的溫度偏差實現最小化。 It is characterized in that when the chuck 100 is pressed and fixed to the edge portion of the tray 100 and the tray 200, the center of the tray 200 is deformed upwardly, thereby causing the tray 200 and the chuck 100 at the center portion. The interval between the trays 200 and the chuck 100 is convexly formed to protrude the projection portion 400, thereby minimizing the temperature deviation between the plurality of substrates W.
此時，在卡盤100內部形成有沿上下方向貫通的多個第一氣體流動孔110，以便能夠使基板W冷卻或升溫，托盤200在其底面形成有與第一氣體流動孔110連通的多個第二氣體流動孔230。 At this time, a plurality of first gas flow holes 110 penetrating in the vertical direction are formed inside the chuck 100 so that the substrate W can be cooled or heated, and the tray 200 is formed with the first gas flow hole 110 at the bottom surface thereof. Second gas flow holes 230.
因此，通過第一氣體流動孔110、第二氣體流動孔230，使熱傳遞氣體流動，以使載置基板W的托盤200冷卻或加熱，熱傳遞氣體可以使用氦氣(He)等惰性氣體。 Therefore, the heat transfer gas flows through the first gas flow hole 110 and the second gas flow hole 230 to cool or heat the tray 200 on which the substrate W is placed, and an inert gas such as helium (He) can be used as the heat transfer gas.
此時，在托盤200的平面中，隔開一定間隔形成有具有與基板W的直徑對應直徑的多個基板載置部210較理想。因此，可以使多個基板W分別載置於在托盤200平面形成的多個基板載置部210並同時處理。 At this time, it is preferable that a plurality of substrate placing portions 210 having diameters corresponding to the diameter of the substrate W are formed in the plane of the tray 200 at regular intervals. Therefore, the plurality of substrates W can be placed on the plurality of substrate placing portions 210 formed on the plane of the tray 200 and processed simultaneously.
另一方面，凸出部400以圓板形狀形成，其直徑形成為托盤200直徑的1/2以下較理想。 On the other hand, the projections 400 are formed in a disk shape, and the diameter thereof is preferably 1/2 or less of the diameter of the tray 200.
這是因為，在凸出部400的直徑超過托盤200直徑的1/2的情況下，當利用夾鉗300對卡盤100與托盤200的邊緣加壓並固定時，托盤200邊緣部的變形增加，在中心部，托盤200與卡盤100之間之間隔增加，發生托盤200中央部與邊緣部的溫度偏差。 This is because, in the case where the diameter of the projection 400 exceeds 1/2 of the diameter of the tray 200, when the chuck 100 is pressed and fixed to the edge of the tray 200 and the tray 200, the deformation of the edge portion of the tray 200 is increased. At the center portion, the interval between the tray 200 and the chuck 100 is increased, and the temperature deviation between the central portion and the edge portion of the tray 200 occurs.
下面參照附圖，對本發明較理想實施例的基板載置單元進行詳細說明。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate mounting unit according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
圖2是顯示本發明第一實施例的托盤的底面的立體圖，圖4是用於說明本發明第一實施例的基板載置單元的剖面圖。 2 is a perspective view showing a bottom surface of a tray according to a first embodiment of the present invention, and FIG. 4 is a cross-sectional view for explaining a substrate mounting unit according to the first embodiment of the present invention.
如圖2及圖4所示，本發明第一實施例的凸出部400從托盤200底面中心向下方凸出形成。 As shown in FIGS. 2 and 4, the projection 400 of the first embodiment of the present invention is formed to protrude downward from the center of the bottom surface of the tray 200.
因此，利用夾鉗300對托盤200與卡盤100的邊緣加壓並固定時，對在托盤200中發生變形而增加的中央部的夾鉗300與卡盤100之間之間隔進行補償，使載置於托盤200平面的多個基板W間的溫度偏差最小化。 Therefore, when the clamp 200 is used to pressurize and fix the edge of the tray 200 and the chuck 100, the interval between the clamp 300 and the chuck 100 which are increased in the deformation of the tray 200 is compensated for The temperature deviation between the plurality of substrates W placed on the plane of the tray 200 is minimized.
此時，凸出部400在托盤200底面中心形成為一體，在其中心形成有沿上下方向貫通的氣體流路410，在底面，以氣體流路410為中心呈放射狀形成有一個以上的氣體流動槽420，以便熱傳遞氣體能夠流入氣體流路410較理想。 At this time, the protruding portion 400 is integrally formed at the center of the bottom surface of the tray 200, and a gas flow path 410 penetrating in the vertical direction is formed at the center thereof, and one or more gases are radially formed on the bottom surface around the gas flow path 410. The flow channel 420 is preferably such that heat transfer gas can flow into the gas flow path 410.
這是因為，使得從卡盤100流入的熱傳遞氣體順利地流入托盤200與卡盤100之間之間隔寬闊的托盤200中央部，從而能夠使與邊緣部的溫度偏差最小化。 This is because the heat transfer gas that has flowed in from the chuck 100 smoothly flows into the central portion of the tray 200 having a wide gap between the tray 200 and the chuck 100, so that the temperature deviation from the edge portion can be minimized.
圖3是顯示本發明另一實施例的卡盤的平面的圖，圖5是用於說明本發明第二實施例的基板載置單元的剖面圖。 3 is a plan view showing a chuck of another embodiment of the present invention, and FIG. 5 is a cross-sectional view for explaining a substrate mounting unit according to a second embodiment of the present invention.
如圖3及圖5所示，本發明第二實施例的凸出部400從卡盤100的上部中心向上方凸出形成較理想，其理由是，如在第一實施例中所作的說明，即使因夾鉗300而發生托盤200的邊緣部彎曲的變形，在中央部，也使得夾鉗300與卡盤100之間之間隔不加寬，從而使載置在托盤200平面的多個基板W間的溫度偏差的發生最小化。 As shown in FIGS. 3 and 5, the projection 400 of the second embodiment of the present invention is preferably formed to protrude upward from the center of the upper portion of the chuck 100, for the reason that, as explained in the first embodiment, Even if the edge portion of the tray 200 is deformed by the clamp 300, the interval between the clamp 300 and the chuck 100 is not widened in the center portion, so that the plurality of substrates W placed on the plane of the tray 200 are made. The occurrence of temperature deviation between the two is minimized.
此時，凸出部400在卡盤100的平面中心形成為一體，在其平面上，呈放射狀形成有一個以上的氣體流路，以便熱傳遞氣體向托盤移動較理想，其理由如前所述。 At this time, the projecting portion 400 is integrally formed at the center of the plane of the chuck 100, and one or more gas flow paths are radially formed on the plane thereof, so that the heat transfer gas is preferably moved toward the tray, for the same reason as before. Said.
圖6是用於說明本發明第三實施例的基板載置單元的剖面圖，圖7是用於說明本發明第四實施例的基板載置單元的剖面圖。 6 is a cross-sectional view for explaining a substrate mounting unit according to a third embodiment of the present invention, and FIG. 7 is a cross-sectional view for explaining a substrate mounting unit according to a fourth embodiment of the present invention.
如圖2、圖3、圖6及圖7所示，本發明第三實施例及第四實施例的基板載置單元還可以包括蓋住托盤200上部的圓板狀的托盤蓋500。 As shown in FIGS. 2, 3, 6, and 7, the substrate mounting unit according to the third embodiment and the fourth embodiment of the present invention may further include a disk-shaped tray cover 500 that covers the upper portion of the tray 200.
在托盤蓋500上，與各個基板載置部210對應地形成有多個基板處理孔530，此時，基板處理孔530的直徑形成為比基板載置部210的直徑小較理想。 A plurality of substrate processing holes 530 are formed in the tray cover 500 corresponding to the respective substrate mounting portions 210. In this case, the diameter of the substrate processing holes 530 is preferably smaller than the diameter of the substrate mounting portion 210.
因此，能夠使載置於托盤200的基板固定，防止基板W從基板載置部210脫離。 Therefore, the substrate placed on the tray 200 can be fixed, and the substrate W can be prevented from being detached from the substrate placing portion 210.
圖8是用於說明本發明第五實施例的基板載置單元的剖面圖，圖9是用於說明本發明第六實施例的基板載置單元的剖面圖。 8 is a cross-sectional view for explaining a substrate mounting unit according to a fifth embodiment of the present invention, and FIG. 9 is a cross-sectional view for explaining a substrate mounting unit according to a sixth embodiment of the present invention.
如圖2、圖3、圖8及圖9所示，本發明第五實施例及第六實施例的基板載置單元還包括托盤蓋500，所述托盤蓋500形成有變形防止部510，所述變形防止部510包圍托盤200的外周面並向下方延長，與卡盤100的平面接觸。 As shown in FIG. 2, FIG. 3, FIG. 8 and FIG. 9, the substrate mounting unit according to the fifth and sixth embodiments of the present invention further includes a tray cover 500, and the tray cover 500 is formed with a deformation preventing portion 510. The deformation preventing portion 510 surrounds the outer circumferential surface of the tray 200 and extends downward, and is in contact with the plane of the chuck 100.
變形防止部510以環形管狀形成，以便托盤200的外周面鄰接其內周面，並向下方延長，使得其底面可以位於與凸出部400的底面相同平面上。 The deformation preventing portion 510 is formed in an annular tubular shape so that the outer peripheral surface of the tray 200 abuts the inner peripheral surface thereof and is extended downward so that the bottom surface thereof can be located on the same plane as the bottom surface of the convex portion 400.
此時，變形防止部510的高度以與凸出部400對應的高度形成較理想。 At this time, the height of the deformation preventing portion 510 is preferably formed at a height corresponding to the protruding portion 400.
因此，當利用夾鉗300固定托盤200與卡盤100時，使施加於托盤200的邊緣部的力最小化，防止托盤200的變形，從而具有能夠使托盤200與卡盤100之間之間隔恆定的效果。 Therefore, when the tray 200 and the chuck 100 are fixed by the clamp 300, the force applied to the edge portion of the tray 200 is minimized, and the deformation of the tray 200 is prevented, thereby having a constant interval between the tray 200 and the chuck 100. Effect.
圖10是用於說明利用本發明一個實施例的基板載置單元處理基板時的溫度偏差的圖，圖11是顯示利用以往基板載置單元和本發明一個實施例的基板載置單元處理基板時，分別載置於托盤中心部與邊緣區域的基板的處理狀態的照片。 10 is a view for explaining a temperature deviation when a substrate is processed by a substrate mounting unit according to an embodiment of the present invention, and FIG. 11 is a view showing a case where a substrate is processed by a substrate mounting unit and a substrate mounting unit according to an embodiment of the present invention. A photograph of the processing state of the substrate placed on the center portion and the edge portion of the tray, respectively.
如圖10所示可知，根據本發明的實施例，托盤200中心部與邊緣部的表面溫度幾乎保持恆定，而中心部溫度(T1)與邊緣部溫度(T2)相等，防止基板W因載置位置不同而發生溫度偏差，從而能夠生產品質均一的基板W。 As shown in FIG. 10, according to the embodiment of the present invention, the surface temperature of the center portion and the edge portion of the tray 200 is almost constant, and the center portion temperature (T1) is equal to the edge portion temperature (T2), preventing the substrate W from being placed. The temperature deviation occurs depending on the position, so that the substrate W of uniform quality can be produced.
另一方面，如圖11所示可知，當把基板固定於以往基板載置單元並對基板進行處理時，載置於托盤200的邊緣部的基板W的寬度顯示為2.7202μm，高度為1.6415μm，而載置於托盤200的中心部的基板W的寬度顯示為2.8073μm，高度顯示為1.6683μm，寬度偏差顯示為0.0871μm，高度偏差為0.0268μm。 On the other hand, as shown in FIG. 11, when the substrate is fixed to the conventional substrate mounting unit and the substrate is processed, the width of the substrate W placed on the edge portion of the tray 200 is 2.7202 μm and the height is 1.6415 μm. The width of the substrate W placed on the center portion of the tray 200 was 2.8073 μm, the height was 1.6683 μm, the width deviation was 0.0871 μm, and the height deviation was 0.0268 μm.
反之，當利用本發明實施例的基板載置單元固定基板W後進行處理時，載置於托盤200的邊緣部的基板W的寬度顯示為2.7068μm，高度顯示為1.6147μm，載置於托盤200中心部的基板W的寬度顯示為2.7269μm，高度顯示為1.6348μm，寬度偏差及高度偏差均為0.0201μm，可知與以 往相比，使寬度偏差減小約77%，高度偏差減小約25%。 On the other hand, when the substrate W is fixed by the substrate mounting unit according to the embodiment of the present invention, the width of the substrate W placed on the edge portion of the tray 200 is 2.7068 μm, and the height is 1.6147 μm, which is placed on the tray 200. The width of the substrate W at the center portion is 2.7269 μm, the height is 1.6348 μm, and the width deviation and height deviation are both 0.0201 μm. In comparison, the width deviation is reduced by about 77% and the height deviation is reduced by about 25%.
上面參照本發明的較理想實施例進行了說明，但只要是所屬技術領域的技術人員，便會理解：在不超出以下申請專利範圍中記載的本發明的思想及領域的範圍內，可以多樣地修改及變更本發明。 The above description has been made with reference to the preferred embodiments of the present invention, but it will be understood by those skilled in the art that the present invention may be variously varied without departing from the scope and spirit of the invention described in the following claims. The invention has been modified and altered.
100‧‧‧卡盤 100‧‧‧ chuck
110‧‧‧第一氣體流動孔 110‧‧‧First gas flow hole
200‧‧‧托盤 200‧‧‧Tray
230‧‧‧第二氣體流動孔 230‧‧‧Second gas flow hole
300‧‧‧夾鉗 300‧‧‧ clamp
400‧‧‧凸出部 400‧‧‧ protruding parts
410‧‧‧氣體流路 410‧‧‧ gas flow path
500‧‧‧托盤蓋 500‧‧‧Tray cover
510‧‧‧變形防止部 510‧‧‧Deformation Prevention Department
530‧‧‧基板處理孔 530‧‧‧Substrate processing hole
W‧‧‧基板 W‧‧‧Substrate
Claims (6)
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| KR20140158515A KR101504880B1 (en) | 2014-11-14 | 2014-11-14 | Unit for supporting substrate |
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| TW201618226A true TW201618226A (en) | 2016-05-16 |
| TWI574347B TWI574347B (en) | 2017-03-11 |
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| CN (1) | CN105609460B (en) |
| TW (1) | TWI574347B (en) |
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| TWI731182B (en) * | 2016-11-03 | 2021-06-21 | 美商分子印記股份有限公司 | Substrate loading system |
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| KR102489201B1 (en) * | 2015-12-18 | 2023-01-18 | 주식회사 기가레인 | Tray unit having temperature control function and system for supporting substrate using the same |
| CN107706138B (en) * | 2017-10-27 | 2019-11-08 | 苏州能讯高能半导体有限公司 | A kind of heat dissipation pallet apparatus and disk etching apparatus |
| CN110504207A (en) * | 2018-05-18 | 2019-11-26 | 北京北方华创微电子装备有限公司 | Support construction, tray support component and processing chamber |
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| JP2006086384A (en) * | 2004-09-16 | 2006-03-30 | Ses Co Ltd | Substrate processing apparatus |
| US20070211402A1 (en) * | 2006-03-08 | 2007-09-13 | Tokyo Electron Limited | Substrate processing apparatus, substrate attracting method, and storage medium |
| KR100877740B1 (en) * | 2007-03-30 | 2009-01-09 | (주)플러스텍 | Plasma processing device for Semi-conductor |
| KR100854974B1 (en) | 2007-04-25 | 2008-08-28 | (주)리드 | Substrate carrier and apparatus for manufacturing of light emitting diode |
| KR101174816B1 (en) * | 2009-12-30 | 2012-08-17 | 주식회사 탑 엔지니어링 | Focus Ring of Plasma Processing Apparatus and Plasma Processing Apparatus Having the Same |
| KR101137545B1 (en) * | 2009-12-30 | 2012-04-20 | 주식회사 탑 엔지니어링 | Integrated Wafer Tray |
| CN102412176B (en) * | 2010-09-26 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and wafer processing equipment possessing the same |
| KR20120097667A (en) * | 2011-02-25 | 2012-09-05 | 서현모 | Substrate tray for plasma processing with excellent cooling effect and plasma processing apparatus |
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| TWI731182B (en) * | 2016-11-03 | 2021-06-21 | 美商分子印記股份有限公司 | Substrate loading system |
| US11195739B2 (en) | 2016-11-03 | 2021-12-07 | Molecular Imprints, Inc. | Substrate loading system |
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| KR101504880B1 (en) | 2015-03-20 |
| TWI574347B (en) | 2017-03-11 |
| CN105609460A (en) | 2016-05-25 |
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