TW201614088A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
TW201614088A
TW201614088A TW104132009A TW104132009A TW201614088A TW 201614088 A TW201614088 A TW 201614088A TW 104132009 A TW104132009 A TW 104132009A TW 104132009 A TW104132009 A TW 104132009A TW 201614088 A TW201614088 A TW 201614088A
Authority
TW
Taiwan
Prior art keywords
sputtering target
base material
ppm
metallic element
metal member
Prior art date
Application number
TW104132009A
Other languages
Chinese (zh)
Other versions
TWI606133B (en
Inventor
Satoru Tateno
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of TW201614088A publication Critical patent/TW201614088A/en
Application granted granted Critical
Publication of TWI606133B publication Critical patent/TWI606133B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C14/00Alloys based on titanium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/03Alloys based on nickel or cobalt based on nickel
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C7/00Alloys based on mercury
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Ceramic Products (AREA)

Abstract

One object of the present invention is to provide a sputtering target, to prevent cracking of the sputtering target material, and to keep it stably on the base material. A sputtering target is provided, comprising: a base material made of a metal, a sputtering target material provided on a surface of the base material and a bonding material provided between the base material and above-described sputtering target material. The bonding material at least comprises a first metallic element and a second metallic element, the concentration of the second metal member relative to the first metal member is 10 ppm to 5000 ppm.
TW104132009A 2014-10-07 2015-09-30 Sputtering target TWI606133B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014206310 2014-10-07
JP2015179471A JP5937731B2 (en) 2014-10-07 2015-09-11 Sputtering target

Publications (2)

Publication Number Publication Date
TW201614088A true TW201614088A (en) 2016-04-16
TWI606133B TWI606133B (en) 2017-11-21

Family

ID=55950947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104132009A TWI606133B (en) 2014-10-07 2015-09-30 Sputtering target

Country Status (3)

Country Link
JP (2) JP5937731B2 (en)
KR (3) KR20160041800A (en)
TW (1) TWI606133B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3271496B1 (en) 2015-03-18 2018-12-19 Umicore Lithium-containing transition metal oxide target.
JP6689309B2 (en) * 2018-03-26 2020-04-28 Jx金属株式会社 Sputtering target member, sputtering target assembly, and method for manufacturing sputtering target member

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006257511A (en) * 2005-03-17 2006-09-28 Mitsui Mining & Smelting Co Ltd Solder alloy for manufacturing sputtering target, and sputtering target using the same
JP5727740B2 (en) * 2010-09-24 2015-06-03 株式会社高純度化学研究所 Manufacturing method of backing plate
CN102686767B (en) * 2010-11-08 2014-05-28 三井金属矿业株式会社 Divided sputtering target and method for producing same
JP5672537B2 (en) * 2010-12-28 2015-02-18 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
JP2012184469A (en) * 2011-03-04 2012-09-27 Mitsubishi Materials Corp METHOD FOR PRODUCING In SPUTTERING TARGET

Also Published As

Publication number Publication date
KR20170055020A (en) 2017-05-18
KR20180124003A (en) 2018-11-20
JP5937731B2 (en) 2016-06-22
JP2016176147A (en) 2016-10-06
JP2016074977A (en) 2016-05-12
KR20160041800A (en) 2016-04-18
JP6053977B2 (en) 2016-12-27
TWI606133B (en) 2017-11-21

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