TW201614036A - Polishing slurry composition - Google Patents
Polishing slurry compositionInfo
- Publication number
- TW201614036A TW201614036A TW104127995A TW104127995A TW201614036A TW 201614036 A TW201614036 A TW 201614036A TW 104127995 A TW104127995 A TW 104127995A TW 104127995 A TW104127995 A TW 104127995A TW 201614036 A TW201614036 A TW 201614036A
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive particles
- slurry composition
- polishing slurry
- particle size
- less
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 4
- 239000002002 slurry Substances 0.000 title abstract 4
- 239000002245 particle Substances 0.000 abstract 7
- 239000011164 primary particle Substances 0.000 abstract 3
- 239000007800 oxidant agent Substances 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- 238000012876 topography Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20140111222 | 2014-08-26 | ||
??10-2014-0111222 | 2014-08-26 | ||
KR1020140149265A KR101660384B1 (ko) | 2014-10-30 | 2014-10-30 | 연마 슬러리 조성물 |
??10-2014-0149265 | 2014-10-30 | ||
KR1020150098372A KR20160024745A (ko) | 2014-08-26 | 2015-07-10 | 연마 슬러리 조성물 |
??10-2015-0098372 | 2015-07-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201614036A true TW201614036A (en) | 2016-04-16 |
TWI658133B TWI658133B (zh) | 2019-05-01 |
Family
ID=56361138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104127995A TWI658133B (zh) | 2014-08-26 | 2015-08-26 | 拋光漿料組合物 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170183537A1 (zh) |
CN (1) | CN106661429B (zh) |
TW (1) | TWI658133B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10077381B2 (en) | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
WO2018021038A1 (ja) * | 2016-07-29 | 2018-02-01 | 富士フイルム株式会社 | 処理液及び基板洗浄方法 |
WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
KR102278257B1 (ko) | 2017-03-27 | 2021-07-15 | 쇼와덴코머티리얼즈가부시끼가이샤 | 슬러리 및 연마 방법 |
CN107607383A (zh) * | 2017-07-26 | 2018-01-19 | 国核锆铪理化检测有限公司 | 一种锆合金ebsd试样制备方法 |
CN111819263A (zh) | 2018-03-22 | 2020-10-23 | 日立化成株式会社 | 研磨液、研磨液套剂和研磨方法 |
WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
SG10201904669TA (en) | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
US10920105B2 (en) * | 2018-07-27 | 2021-02-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materials and methods for chemical mechanical polishing of ruthenium-containing materials |
KR20220118520A (ko) * | 2019-12-20 | 2022-08-25 | 버슘머트리얼즈 유에스, 엘엘씨 | Co/cu 선택적 습식 에칭제 |
CN113045992A (zh) * | 2021-03-23 | 2021-06-29 | 广东精坚科技有限公司 | 一种中性抛光液及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
KR100481651B1 (ko) * | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
KR20030063763A (ko) * | 2002-01-24 | 2003-07-31 | 한국과학기술연구원 | 텅스텐 씨엠피용 슬러리 |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
US7147682B2 (en) * | 2002-12-26 | 2006-12-12 | Kao Corporation | Polishing composition |
CN101058711B (zh) * | 2003-06-13 | 2011-07-20 | 日立化成工业株式会社 | 金属用研磨液以及研磨方法 |
JP4130614B2 (ja) * | 2003-06-18 | 2008-08-06 | 株式会社東芝 | 半導体装置の製造方法 |
US7485162B2 (en) * | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
DE602005023557D1 (de) * | 2004-04-12 | 2010-10-28 | Jsr Corp | Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren |
KR100697293B1 (ko) * | 2005-10-04 | 2007-03-20 | 삼성전자주식회사 | 화학기계적 연마용 연마제 및 이를 이용한 화학기계적연마방법 |
JP5381701B2 (ja) * | 2007-02-27 | 2014-01-08 | 日立化成株式会社 | 金属用研磨液及び研磨方法 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP5979871B2 (ja) * | 2011-03-09 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
KR101257336B1 (ko) * | 2012-04-13 | 2013-04-23 | 유비머트리얼즈주식회사 | 연마용 슬러리 및 이를 이용한 기판 연마 방법 |
US9303190B2 (en) * | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
-
2015
- 2015-08-11 US US15/325,095 patent/US20170183537A1/en not_active Abandoned
- 2015-08-11 CN CN201580042750.8A patent/CN106661429B/zh active Active
- 2015-08-26 TW TW104127995A patent/TWI658133B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20170183537A1 (en) | 2017-06-29 |
TWI658133B (zh) | 2019-05-01 |
CN106661429B (zh) | 2019-07-05 |
CN106661429A (zh) | 2017-05-10 |
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