TW201614036A - Polishing slurry composition - Google Patents

Polishing slurry composition

Info

Publication number
TW201614036A
TW201614036A TW104127995A TW104127995A TW201614036A TW 201614036 A TW201614036 A TW 201614036A TW 104127995 A TW104127995 A TW 104127995A TW 104127995 A TW104127995 A TW 104127995A TW 201614036 A TW201614036 A TW 201614036A
Authority
TW
Taiwan
Prior art keywords
abrasive particles
slurry composition
polishing slurry
particle size
less
Prior art date
Application number
TW104127995A
Other languages
English (en)
Other versions
TWI658133B (zh
Inventor
Joo-Hyoung Yoon
Seung-Chul Hong
Young-Ho Yoon
Un-Gyu Paik
Ji-Hoon Seo
Ki-Jung Kim
Kang-Cheon Lee
Original Assignee
K C Tech Co Ltd
Iucf Hyu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140149265A external-priority patent/KR101660384B1/ko
Priority claimed from KR1020150098372A external-priority patent/KR20160024745A/ko
Application filed by K C Tech Co Ltd, Iucf Hyu filed Critical K C Tech Co Ltd
Publication of TW201614036A publication Critical patent/TW201614036A/zh
Application granted granted Critical
Publication of TWI658133B publication Critical patent/TWI658133B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104127995A 2014-08-26 2015-08-26 拋光漿料組合物 TWI658133B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20140111222 2014-08-26
??10-2014-0111222 2014-08-26
KR1020140149265A KR101660384B1 (ko) 2014-10-30 2014-10-30 연마 슬러리 조성물
??10-2014-0149265 2014-10-30
KR1020150098372A KR20160024745A (ko) 2014-08-26 2015-07-10 연마 슬러리 조성물
??10-2015-0098372 2015-07-10

Publications (2)

Publication Number Publication Date
TW201614036A true TW201614036A (en) 2016-04-16
TWI658133B TWI658133B (zh) 2019-05-01

Family

ID=56361138

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104127995A TWI658133B (zh) 2014-08-26 2015-08-26 拋光漿料組合物

Country Status (3)

Country Link
US (1) US20170183537A1 (zh)
CN (1) CN106661429B (zh)
TW (1) TWI658133B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10077381B2 (en) 2015-07-20 2018-09-18 Kctech Co., Ltd. Polishing slurry composition
WO2018021038A1 (ja) * 2016-07-29 2018-02-01 富士フイルム株式会社 処理液及び基板洗浄方法
WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
KR102278257B1 (ko) 2017-03-27 2021-07-15 쇼와덴코머티리얼즈가부시끼가이샤 슬러리 및 연마 방법
CN107607383A (zh) * 2017-07-26 2018-01-19 国核锆铪理化检测有限公司 一种锆合金ebsd试样制备方法
CN111819263A (zh) 2018-03-22 2020-10-23 日立化成株式会社 研磨液、研磨液套剂和研磨方法
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
SG10201904669TA (en) 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
US10920105B2 (en) * 2018-07-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Materials and methods for chemical mechanical polishing of ruthenium-containing materials
KR20220118520A (ko) * 2019-12-20 2022-08-25 버슘머트리얼즈 유에스, 엘엘씨 Co/cu 선택적 습식 에칭제
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
KR100481651B1 (ko) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
KR20030063763A (ko) * 2002-01-24 2003-07-31 한국과학기술연구원 텅스텐 씨엠피용 슬러리
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US7147682B2 (en) * 2002-12-26 2006-12-12 Kao Corporation Polishing composition
CN101058711B (zh) * 2003-06-13 2011-07-20 日立化成工业株式会社 金属用研磨液以及研磨方法
JP4130614B2 (ja) * 2003-06-18 2008-08-06 株式会社東芝 半導体装置の製造方法
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
DE602005023557D1 (de) * 2004-04-12 2010-10-28 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren und chemisch-mechanisches Polierverfahren
KR100697293B1 (ko) * 2005-10-04 2007-03-20 삼성전자주식회사 화학기계적 연마용 연마제 및 이를 이용한 화학기계적연마방법
JP5381701B2 (ja) * 2007-02-27 2014-01-08 日立化成株式会社 金属用研磨液及び研磨方法
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
KR101257336B1 (ko) * 2012-04-13 2013-04-23 유비머트리얼즈주식회사 연마용 슬러리 및 이를 이용한 기판 연마 방법
US9303190B2 (en) * 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition

Also Published As

Publication number Publication date
US20170183537A1 (en) 2017-06-29
TWI658133B (zh) 2019-05-01
CN106661429B (zh) 2019-07-05
CN106661429A (zh) 2017-05-10

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