TW201613100A - High voltage semiconductor device and method of manufacturing the same - Google Patents

High voltage semiconductor device and method of manufacturing the same

Info

Publication number
TW201613100A
TW201613100A TW103132924A TW103132924A TW201613100A TW 201613100 A TW201613100 A TW 201613100A TW 103132924 A TW103132924 A TW 103132924A TW 103132924 A TW103132924 A TW 103132924A TW 201613100 A TW201613100 A TW 201613100A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
high voltage
voltage semiconductor
gate structure
disposed over
Prior art date
Application number
TW103132924A
Other languages
English (en)
Other versions
TWI570931B (zh
Inventor
Chung-Ren Lao
Hsing-Chao Liu
chu-feng Chen
Wei-Chun Chou
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW103132924A priority Critical patent/TWI570931B/zh
Publication of TW201613100A publication Critical patent/TW201613100A/zh
Application granted granted Critical
Publication of TWI570931B publication Critical patent/TWI570931B/zh

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
TW103132924A 2014-09-24 2014-09-24 高壓半導體裝置及其製造方法 TWI570931B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103132924A TWI570931B (zh) 2014-09-24 2014-09-24 高壓半導體裝置及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103132924A TWI570931B (zh) 2014-09-24 2014-09-24 高壓半導體裝置及其製造方法

Publications (2)

Publication Number Publication Date
TW201613100A true TW201613100A (en) 2016-04-01
TWI570931B TWI570931B (zh) 2017-02-11

Family

ID=56360948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103132924A TWI570931B (zh) 2014-09-24 2014-09-24 高壓半導體裝置及其製造方法

Country Status (1)

Country Link
TW (1) TWI570931B (zh)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI440183B (zh) * 2011-03-24 2014-06-01 Macronix Int Co Ltd 超高電壓ｎ型金屬氧化物半導體元件及其製造方法
KR20140101817A (ko) * 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

Also Published As

Publication number Publication date
TWI570931B (zh) 2017-02-11

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