TW201613074A - Non-volatile semiconductor device and method for operating the same - Google Patents

Non-volatile semiconductor device and method for operating the same

Info

Publication number
TW201613074A
TW201613074A TW103133575A TW103133575A TW201613074A TW 201613074 A TW201613074 A TW 201613074A TW 103133575 A TW103133575 A TW 103133575A TW 103133575 A TW103133575 A TW 103133575A TW 201613074 A TW201613074 A TW 201613074A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
gate
semiconductor device
drain
operating
Prior art date
Application number
TW103133575A
Other languages
Chinese (zh)
Inventor
Chrong-Jung Lin
Ya-Chin King
Original Assignee
Chrong-Jung Lin
Ya-Chin King
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chrong-Jung Lin, Ya-Chin King filed Critical Chrong-Jung Lin
Priority to TW103133575A priority Critical patent/TW201613074A/en
Publication of TW201613074A publication Critical patent/TW201613074A/en

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

A non-volatile semiconductor device includes a semiconductor substrate, a gate dielectric layer, a floating gate, a spacer layer, a control gate, a first source/drain, and a second source/drain. The gate dielectric layer is disposed on the semiconductor substrate. The floating gate is disposed on the gate dielectric layer and the semiconductor substrate. The spacer layer is disposed on the semiconductor substrate and on both sides of the floating gate. The control gate is disposed on a side of the spacer layer opposing the floating gate. The first source/drain and the second source/drain are formed in the semiconductor substrate and on both sides of the floating gate.
TW103133575A 2014-09-26 2014-09-26 Non-volatile semiconductor device and method for operating the same TW201613074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103133575A TW201613074A (en) 2014-09-26 2014-09-26 Non-volatile semiconductor device and method for operating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103133575A TW201613074A (en) 2014-09-26 2014-09-26 Non-volatile semiconductor device and method for operating the same

Publications (1)

Publication Number Publication Date
TW201613074A true TW201613074A (en) 2016-04-01

Family

ID=56360946

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133575A TW201613074A (en) 2014-09-26 2014-09-26 Non-volatile semiconductor device and method for operating the same

Country Status (1)

Country Link
TW (1) TW201613074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766244B (en) * 2019-04-24 2022-06-01 王振志 Nor-type memory device and method of fabricating the same
TWI773116B (en) * 2020-05-18 2022-08-01 日商鎧俠股份有限公司 semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766244B (en) * 2019-04-24 2022-06-01 王振志 Nor-type memory device and method of fabricating the same
TWI773116B (en) * 2020-05-18 2022-08-01 日商鎧俠股份有限公司 semiconductor memory device

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