TW201612952A - Method of forming polysilicon thin film and method of manufacturing thin-film transistor - Google Patents

Method of forming polysilicon thin film and method of manufacturing thin-film transistor

Info

Publication number
TW201612952A
TW201612952A TW103136932A TW103136932A TW201612952A TW 201612952 A TW201612952 A TW 201612952A TW 103136932 A TW103136932 A TW 103136932A TW 103136932 A TW103136932 A TW 103136932A TW 201612952 A TW201612952 A TW 201612952A
Authority
TW
Taiwan
Prior art keywords
thin film
amorphous silicon
film
polysilicon thin
forming polysilicon
Prior art date
Application number
TW103136932A
Other languages
Chinese (zh)
Other versions
TWI567794B (en
Inventor
Ming-Jen Lu
Shang-Hua Chung
Chien-Hung Wu
Ssu-Chun Peng
Original Assignee
Everdisplay Optronics Shanghai Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everdisplay Optronics Shanghai Ltd filed Critical Everdisplay Optronics Shanghai Ltd
Publication of TW201612952A publication Critical patent/TW201612952A/en
Application granted granted Critical
Publication of TWI567794B publication Critical patent/TWI567794B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention relates to a method of forming polysilicon thin film and a method of manufacturing thin-film transistor using the same. The method of forming polysilicon thin film comprises: step 10: depositing a first amorphous silicon thin film on a substrate; step 20: a laser annealing process for irradiating laser to the first amorphous silicon thin film, the first amorphous silicon thin film is heated and melted to generate a first polysilicon thin film; step 30: using the surface of the first polysilicon thin film generated by the argon ion bombardment to generate a second amorphous silicon thin film; and step 40: a laser activation step for resetting the lattice of the second thin film amorphous silicon to form a second polysilicon thin film.
TW103136932A 2014-09-25 2014-10-24 Method of forming polysilicon thin film and method of manufacturing thin-film transistor TWI567794B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410499658.1A CN104241140A (en) 2014-09-25 2014-09-25 Method for forming polycrystalline silicon thin film and manufacturing method of thin film transistor

Publications (2)

Publication Number Publication Date
TW201612952A true TW201612952A (en) 2016-04-01
TWI567794B TWI567794B (en) 2017-01-21

Family

ID=52228989

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103136932A TWI567794B (en) 2014-09-25 2014-10-24 Method of forming polysilicon thin film and method of manufacturing thin-film transistor

Country Status (2)

Country Link
CN (1) CN104241140A (en)
TW (1) TWI567794B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783563A (en) * 2016-12-21 2017-05-31 武汉华星光电技术有限公司 A kind of method and device improved to polysilicon membrane surface roughness after quasi-molecule laser annealing
CN107464752A (en) 2017-07-18 2017-12-12 武汉华星光电半导体显示技术有限公司 The preparation method of polysilicon membrane, the preparation method of thin-film transistor array base-plate
CN111979524B (en) * 2020-08-19 2021-12-14 福建省晋华集成电路有限公司 Polycrystalline silicon layer forming method, polycrystalline silicon layer and semiconductor structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204794A (en) * 1998-01-08 1999-07-30 Matsushita Electric Ind Co Ltd Formation of polysilicon film in low-temperature polysilicon tft manufacture process
WO2002019363A2 (en) * 2000-08-28 2002-03-07 Applied Materials, Inc. Pre-polycoating of glass substrates
JP4222966B2 (en) * 2004-04-22 2009-02-12 三菱電機株式会社 Thin film transistor and manufacturing method thereof
KR100624427B1 (en) * 2004-07-08 2006-09-19 삼성전자주식회사 Fabrication method of poly crystalline Si and semiconductor device by the same
CN1848390A (en) * 2005-04-05 2006-10-18 联华电子股份有限公司 Method for producing poly crystalline silicon grid transistor capable of reducing poly crystalline silicon depletion effect
JP2007299976A (en) * 2006-05-01 2007-11-15 Seiko Epson Corp Process for fabricating semiconductor device

Also Published As

Publication number Publication date
CN104241140A (en) 2014-12-24
TWI567794B (en) 2017-01-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees