TW201606851A - Method for forming semiconductor structure without mask process - Google Patents

Abstract

A method for forming a semiconductor structure without mask process is provided, which comprises a semiconductor substrate that is provided, a metal layer that is formed on the semiconductor substrate by sputtering process, a photoresist layer is formed on the metal layer by spin coating process, and a patterned polymer layer that is printed on the photoresist layer. UV light is illuminated to the printed-patterned polymer layer to transfer the pattern on the metal layer and then the portion of photoresist layer which is not covered by the patterned polymer layer on the semiconductor substrate will be removed by elution process. Next, the printed-patterned polymer layer and the photoresist layer are used as an etching mask for removing the portion metal layer with etching process and the portion surface of the semiconductor substrate is to be exposed. Finally, the patterned polymer layer and the photoresist layer are stripped to form a patterned metal layer on the semiconductor substrate.

Description

Method of forming a semiconductor structure using a maskless process

The present invention relates to a semiconductor process method, and more particularly to a method of forming a semiconductor structure using a maskless process.

Generally, various electronic components belonging to the semiconductor field, such as a transistor, a microprocessor, a dynamic memory, and a static memory, are mostly manufactured by sophisticated integrated circuit manufacturing technology in the semiconductor field. In the manufacturing technology of integrated circuits, technologies including wafer oxide growth technology, lithography, etching, cleaning, impurity diffusion, ion implantation, and thin film deposition are used, and when manufacturing processes are performed, It is more likely that the process steps are as many as hundreds of steps to produce the aforementioned electronic components.

With the development of electronic information products in the direction of light, thin and short, it has positively affected the development trend of integrated circuit manufacturing technology, generally increasing the diameter of the wafer, reducing the component line width, and specializing in the process steps. Produce better products. The extremely small size of the integrated circuit is also the goal of continuous efforts in the process, but different process limitations increase the difficulty of the integrated circuit process. In the field of integrated circuit manufacturing, photolithography is also one of the important application technologies.

Optical lithography process technology, which is widely used in the field of integrated circuit manufacturing, optics An important component of the lithography is a mask, which includes an integrated circuit layout pattern, and the integrated circuit layout pattern is formed according to the pattern features of the integrated circuit design. The reticle generally comprises a transparent glass plate and can cover a bright block material of the integrated circuit layout pattern, such as chromium (Cr, chromium). However, for high-order wafers, the complexity of the integrated circuit layout pattern design and the file size of the reticle will increase rapidly. For example, for files with a file size of 5 million bits (GBytes), it takes a long time for the mask to be written. Moreover, after writing, if alignment is required between the integrated circuit layout pattern on the reticle and the semiconductor structure, if there is an error between the two, the integrated circuit layout pattern formed in the subsequent step will also be If there is a difference, the mask step needs to be repeated, and the process steps are quite cumbersome and time consuming, and the process cost is increased.

Therefore, in order to enable a more efficient mask writing process (or an alternative integrated circuit pattern transfer process), a new mask writing process needs to be developed to improve the mask writing efficiency and reduce the overall manufacturing cost. .

According to the conventional technology, the main purpose of the present invention is to provide a method for forming a semiconductor structure without a mask process, which is to print a completed integrated circuit pattern (or a printed circuit board pattern). Formed directly on the semiconductor structure without the need for a reticle process to achieve process steps and cost savings.

A further object of the present invention is to first apply a photoresist to a substrate, and then print a printed circuit board pattern of different resolutions or a printed circuit board pattern on a semiconductor substrate with a low light sensitivity polymer material. Pattern transfer process to reduce mask process and increase pattern accuracy degree.

In accordance with the foregoing, the present invention discloses a method for forming a semiconductor structure without a mask process, the method comprising the steps of: providing a semiconductor substrate, the metal layer is formed on the semiconductor substrate by sputtering (or electroless plating process), and the photoresist The layer is formed on the metal layer by spin coating, and the patterned polymer layer is formed on the photoresist layer, and the patterned polymer layer is irradiated with ultraviolet light, so that the pattern on the polymer layer is transferred to the metal layer. And removing a portion of the photoresist layer on the semiconductor substrate that is not covered by the polymer layer by means of elution. Then, the polymer layer and the photoresist layer are used as an etch mask, a part of the metal layer is removed by etching, and a part of the surface of the semiconductor substrate is exposed, and the patterned polymer layer is removed by stripping. And removing the photoresist layer to form a patterned metal layer on the semiconductor substrate.

In accordance with the above objects, the present invention also discloses a method of forming a semiconductor structure using a maskless process, the method comprising the steps of: providing a semiconductor substrate, the metal layer being formed on the semiconductor substrate by sputtering (or electroless plating), and The photoresist layer is formed on the metal layer by spin coating. Next, a polymer layer of a pattern to be formed on the metal layer is printed. The patterned polymer layer is irradiated with ultraviolet light to transfer the pattern on the polymer layer to the metal layer. Next, the patterned polymer layer and a portion of the photoresist layer are removed by rinsing, and a portion of the metal layer is exposed. A portion of the exposed metal layer is removed by etching and a portion of the surface of the semiconductor substrate is exposed. Finally, the photoresist layer on the metal layer is removed by stripping to form a patterned metal layer on the semiconductor substrate.

In accordance with the above objects, the present invention also discloses a method of forming a semiconductor structure using a maskless process, the method comprising providing a semiconductor substrate, the metal layer being formed on the semiconductor substrate and the patterned polymer layer being formed on the metal layer. Next, using ultraviolet light to illuminate the pattern The polymer layer allows the pattern to be transferred to the metal layer. Then, a portion of the metal layer is removed by etching according to the pattern. Finally, the patterned polymer layer is removed by stripping, and a patterned metal layer is formed on the semiconductor substrate.

The invention can simplify the process of the integrated circuit (or the printed circuit board), can directly print the pattern, and does not need to prepare the reticle, thereby reducing the manufacturing cost.

The invention can also directly print the pattern as a photomask, and the directly printed photomask has the advantages of low cost and can be reused, and becomes an excellent environmental protection process.

10, 20, 30‧‧‧ semiconductor substrate

12, 22, 32‧‧‧ metal layers

122‧‧‧patterned metal layer

222‧‧‧metal layer without pattern

322‧‧‧metal layer

14, 24‧‧‧ photoresist layer

142‧‧‧ photoresist layer

242‧‧‧Photoresist layer

16, 26, 36‧‧‧ polymer layer

18‧‧‧ ultraviolet light

1A through 1F are schematic flow diagrams showing the steps of a method of forming a semiconductor structure using a maskless process in accordance with the teachings of the present invention.

2A through 2F are schematic flow diagrams showing another embodiment of a method of forming a semiconductor structure using a maskless process in accordance with the teachings of the present invention.

3A through 3D are schematic flow diagrams showing still another embodiment of a method of forming a semiconductor structure using a maskless process in accordance with the teachings of the present invention.

The present invention is a method for forming a semiconductor structure by using a maskless process, in which an integrated circuit pattern to be formed or a pattern of a printed circuit board is formed on a semiconductor structure by direct printing without using light. Cover process to save semiconductor process steps and process costs. In order to thoroughly understand the present invention, detailed steps and compositions thereof will be set forth in the following description. However, for the preferred embodiment of the present invention, it will be described in detail as follows, except for these details. The present invention may be widely practiced in other embodiments, and the scope of the present invention is not limited by the scope of the following patents.

First, please refer to FIG. 1A to FIG. 1F. FIG. 1A to FIG. 1F are schematic diagrams showing the steps of forming a semiconductor structure by using the maskless process disclosed in the present invention. In FIG. 1A, a semiconductor substrate 10 is first provided, and a metal layer 12 is formed on the semiconductor substrate 10 by sputtering (or a chemical plating process). The semiconductor substrate 10 may be a silicon substrate, and the metal layer 12 may be copper (Cu) or gold (Au). In the embodiment of the invention, gold (Au) is used as the metal layer 12.

Next, please refer to FIG. 1B, which is a photoresist layer 14 formed on the metal layer 12, which may be formed by spin coating to form the photoresist layer 14 on the metal layer. 12 on. In the present invention, the photoresist layer 14 may be a negative photoresist layer or a positive photoresist layer. The photoresist layer 12 disclosed in this embodiment is a positive photoresist layer. It should be noted that the selected photoresist type can determine whether the printed pattern will be retained or removed. In this embodiment, when the positive photoresist is selected, the pattern is printed on the positive photoresist, and when the yellow light process is performed, the uncrosslinked photoresist is removed, and then etching is performed to retain the area covered by the printed pattern. Conversely, if a negative photoresist is selected, the pattern is printed on the negative photoresist, and a yellow light process is performed to remove the uncrosslinked photoresist layer and then etched to leave the area not covered by the printed pattern.

Next, in FIG. 1C, the polymer layer 16 is formed on the photoresist layer 14, and then the desired pattern is printed to form the polymer layer 16. In addition, in the present invention, the polymer layer 16 can be regarded as a photomask, so that a conventional semiconductor photomask is not required in the process, and the complicated lithography process and development process must be performed, and the present invention can be reduced accordingly. Process procedures and reduced process costs.

Next, please refer to the 1C chart. The polymer layer 16 is irradiated with ultraviolet light 18 so that the pattern of the polymer layer 16 can be transferred to the metal layer 12. It is to be noted that since the polymer layer 16 is a low-light-sensitive polymer material, in the step of ultraviolet light irradiation, the polymer layer 16 is not exposed to ultraviolet light to cause a crosslinking reaction, but the change is high. The outline of the pattern on the molecular layer 16. Therefore, the accuracy of the pattern transferred to the metal layer 12 after irradiation with ultraviolet light and the accuracy of alignment can be improved, and the steps of pattern modification or rework due to the difference in pattern in the subsequent steps can be reduced. .

Next, referring to FIG. 1D, after the ultraviolet light 18 is irradiated, the photoresist layer 14 not covered by the patterned polymer layer 16 is removed by an elution to retain a portion of the photoresist layer 14 The photoresist layer 142 covered by the patterned polymer layer 16 is simultaneously exposed to a portion of the metal layer 12.

Next, referring to FIG. 1E, the patterned polymer layer 16 and a portion of the photoresist layer 142 are used as an etch mask, etched (both dry and wet processes can be performed), and etched to remove no pattern. The metal layer 12 retains the metal layer 122 covered by the patterned polymer layer 16 and a portion of the photoresist layer 142.

Referring to FIG. 1F, the patterned polymer layer 16 and a portion of the photoresist layer 122 are sequentially removed by stripping, and the patterned metal layer 122 is formed on the semiconductor substrate. 10, in order to complete the process of forming a pattern on a semiconductor structure using a maskless process.

Next, please refer to FIG. 2A to FIG. 2F. FIG. 2A to FIG. 2F are schematic diagrams showing the steps of another embodiment of the present invention for forming a semiconductor structure by using a maskless process. As in the previous embodiment, in FIG. 2A, the semiconductor substrate 20 is first provided, and a metal layer 22 is formed on the semiconductor base by sputtering or electroless plating. On the board 20. The material properties and functions of the semiconductor substrate 202 and the metal layer 22 are the same as those of the previous embodiment, and will not be described herein.

Referring to FIG. 2B, the difference between the second embodiment BB and the previous embodiment (FIG. 1A to FIG. 1F) is that, in FIG. 2B, the photoresist layer 24 formed on the metal layer 22 is A positive photoresist layer is used in the previous embodiment. Therefore, as described above, after printing the pattern on the positive photoresist, a yellow light process is performed, and after removing the uncrosslinked photoresist layer, etching is performed to retain the area covered by the printed pattern.

Next, in FIG. 2C, the polymer layer 26 is formed on the photoresist layer 24, and then the desired pattern is printed to form the polymer layer 26. Similarly, in another embodiment of the present invention, the sheet layer 26 may be first printed in a polymer pattern, and then the patterned polymer sheet layer 26 is placed on the photoresist layer 24. Next, the polymer layer 26 is irradiated with the ultraviolet light 18 so that the pattern of the polymer pattern sheet layer 26 can be transferred to the metal layer 22. Similarly, the properties and functions of the material of the polymer pattern sheet layer 26 and after irradiation with the ultraviolet light 18 are the same as those described above, and will not be described herein.

Next, referring to FIG. 2D, after the ultraviolet light 18 is irradiated, the patterned polymer pattern sheet layer 26 is removed by using an elution method (to retain the photoresist layer 24 having no pattern), and A portion of the metal layer 22 is exposed.

Next, please refer to FIG. 2E, etched (both dry and wet processes can be performed), etched to remove the patterned metal layer 22 to retain the patterned photoresist layer 242 and metal layer 222, and exposed A part of the surface of the semiconductor substrate 20 is taken out.

Referring to FIG. 2F, a portion of the photoresist layer 242 is also removed by stripping, and a metal layer 222 having no pattern is formed on the semiconductor substrate 20 to complete the profit. A process of forming a pattern on a semiconductor structure using a maskless process.

In addition, please refer to FIG. 3A to FIG. 3D , which are schematic diagrams showing the steps of a further embodiment of forming a semiconductor structure by using a maskless process according to the present invention. In the present embodiment, the forming step of the metal layer 32 of FIG. 3A on the semiconductor substrate 30, and the functions of the semiconductor substrate 30 and the metal layer 32 are the same as those of the foregoing embodiment, and will not be described herein.

then. Referring to FIG. 3B, similarly, the patterned polymer layer 36 is formed on the metal layer 32 by spin coating. In this embodiment, the pattern sheet layer 36 is first formed in a polymer printing pattern, and then the patterned polymer sheet layer 36 is formed on the metal layer 32. The advantage of the polymer sheet layer 36 is that the polymer sheet layer 36 can be viewed. It is a reticle for re-use, therefore, no additional reticle is required in this embodiment, which simplifies the process and reduces the process cost.

Please refer to Figure 3C. The patterned polymer sheet layer 36 is used as an etch mask, etched (both dry and wet processes can be performed), and etched to remove the unpatterned metal layer 32 (refer to FIG. 3B) while retaining a patterned polymer sheet layer 36 and a metal layer 322 covered by the polymer sheet layer 36 (ie, transferring the metal layer of the printing pattern, and removing the metal layer not covered by the polymer layer using an etching method) ).

Finally, referring to FIG. 3D, the patterned polymer layer 36 is removed from the portion of the metal layer 322 by stripping, and a portion of the metal layer 322 is formed on the semiconductor substrate 10 to complete. A process for forming a pattern on a semiconductor structure using a maskless photoresist layer process.

According to the above, the desired pattern is directly printed into a polymer layer, and the resolution of the pattern can be from nanometer to micrometer, which can increase the accuracy and accuracy of pattern transfer. In addition, the desired pattern may be directly printed into a polymer layer or a sheet layer, and the patterned polymer layer may be formed on the photoresist layer, or the polymer layer may be formed first and then placed on the photoresist layer.

It is more flexible for the printing process of the pattern. If the pattern needs to be corrected, it can be performed before the etching step, which can greatly reduce the cumbersomeness of the pattern after the etching is performed or the need to correct the remanufacturing. step. In addition, since the polymer sheet layer regarded as the photomask can be repeatedly used, it is not necessary to additionally prepare a photomask, which can simplify the process steps of the integrated circuit or the printed circuit board and save the process cost.

The invention can simplify the process of the integrated circuit (or the printed circuit board), can directly print the pattern, and does not need to prepare the reticle, thereby reducing the manufacturing cost, and the invention can also directly print the pattern as a reticle, which is directly printed. Photomasks are inexpensive and can be reused, making them an excellent environmentally friendly process.

The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following. Within the scope of the patent application.

10‧‧‧Semiconductor substrate

12‧‧‧metal layer

14‧‧‧ photoresist layer

16‧‧‧ polymer layer

18‧‧‧ ultraviolet light

Claims (9)

A method for forming a semiconductor structure without a mask process, comprising: providing a semiconductor substrate, a metal layer on the semiconductor substrate, and a photoresist layer on the metal layer; forming a polymer layer having a printed pattern thereon On the photoresist layer; transferring the printing pattern onto the metal layer, irradiating the polymer layer having the printing pattern with an ultraviolet light to transfer the printing pattern onto the metal layer; the removal is not high a portion of the photoresist layer covered by the molecular layer to retain the polymer layer having the print pattern and a portion of the photoresist layer; the polymer layer having the print pattern and a portion of the photoresist layer as an etch mask a cover for removing a portion of the metal layer and exposing a portion of the surface of the semiconductor substrate; and removing the polymer layer having the printed pattern and the photoresist layer to form the metal layer having the printed pattern On the semiconductor substrate. A method for forming a semiconductor structure without a mask process, comprising: providing a semiconductor substrate, a metal layer on the semiconductor substrate, a photoresist layer on the metal layer, and a polymer layer on the photoresist layer; forming a printing pattern on the polymer layer; transferring the printing pattern to the metal layer, irradiating the polymer layer having the printing pattern with an ultraviolet light, so that the printing pattern is transferred to the metal layer; Excluding the polymer layer having the printing pattern and a portion of the photoresist layer, and exposing a portion of the metal layer; Removing a portion of the exposed metal layer and exposing a portion of the surface of the semiconductor substrate; and removing the photoresist layer to form the metal layer having the printed pattern on the semiconductor substrate. A method for forming a semiconductor structure without a mask process, comprising: providing a semiconductor substrate, a metal layer on the semiconductor substrate, and a polymer layer having a printed pattern on the metal layer; transferring the printed pattern to the metal layer Removing the metal layer not covered by the polymer layer by an etching method, such that the printing pattern is transferred onto the metal layer; removing a portion of the metal layer according to the printing pattern; and removing the column The polymer layer of the pattern is printed to form the metal layer having the print pattern on the semiconductor substrate. The method of claim 3, wherein the step of removing a portion of the metal layer according to the printing pattern removes the metal layer not covered by the printing pattern by an etching step according to the printing pattern . The method of claim 3, wherein the step of removing a portion of the metal layer according to the printing pattern removes the metal layer covered by the printing pattern by an etching step according to the pattern, and retains the The metal layer covered by the printed pattern on the polymer layer. The method of any one of the preceding claims, wherein the method of forming the metal layer is selected by a sputtering process and a chemical plating process group. (This is the US patent law, which is also introduced to China. The original is: ...is selected from the group consisting of....). The method of any one of the preceding claims, wherein the photoresist layer is formed Including the use of a spin coating process. The method of claim 1, wherein removing the portion of the photoresist layer that is not covered by the polymer layer comprises using an elution process. The method of claim 2, wherein removing the polymer layer having the print pattern and a portion of the photoresist layer comprises using an elution process.