TW201604937A - Apparatus and method for deposition of material on a substrate - Google Patents

Abstract

An apparatus for deposition of material on a substrate is described. The apparatus includes a deposition array (222) having three or more cathodes (122), wherein the deposition array comprises: a first outer deposition assembly (301) comprising at least a first cathode of the three or more cathodes; a second outer deposition assembly (302) opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes; and an inner deposition assembly (303) comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) is configured for depositing the material at a higher rate than the inner deposition assembly (303) on the same substrate during the same time.

Description

Uniform heat dissipation in physical vapor deposition array coater

Embodiments of the invention relate to layer deposition by sputtering from a target. Embodiments of the invention are particularly directed to sputtering on large area substrates, and more particularly for static deposition processes. Embodiments are particularly directed to apparatus and methods for depositing a layer of material on a substrate.

In many applications, it is desirable to deposit a thin layer on a substrate, such as a glass substrate. Conventionally, the substrates are coated in different chambers of a coating apparatus. For some applications, the substrate is in a vacuum and coated using a vapor deposition technique.

Several methods are known for depositing materials on a substrate. For example, the substrate may be subjected to a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD). ) Process and so on to coat. Typically, the process is carried out in a processing apparatus or processing chamber in which the substrate to be coated is located. For PVD processes, the deposited material can be present in the target in a solid phase. The atomic system of the target material (ie, the material to be deposited) is emitted from the target by impacting the target with high energy particles. The atomic system of the target material is deposited on the substrate to be coated. In the PVD process, the sputtered material, that is, the substrate to be deposited The material on it can be configured in different ways. For example, the target may be made of a material to be deposited, or may have a backing member to which the material to be deposited is affixed. The target containing the material to be deposited is supported or fixed in a predetermined location within the deposition chamber.

Typically, sputtering can be performed in a magnetron sputtering manner in which a magnet assembly is used to limit the plasma in order to improve sputtering conditions. The plasma distribution, plasma characteristics, and other deposition parameters need to be controlled to achieve the desired layer deposition on the substrate. For example, a uniform layer with the desired layer properties is desired. This is particularly advantageous for large area deposition, for example for the manufacture of displays on large area substrates. In addition, uniformity and process stability can be particularly difficult to achieve for static deposition processes in which the substrate does not move continuously through the deposition zone. Accordingly, in view of the increased demand for manufacturing optoelectronic devices and other devices on a large scale, process uniformity and/or stability needs to be further improved.

In conventional large area multi-target static PVD array applicators, several sputtering targets are used to cover the entire substrate area. The distribution of material sputtered from a target typically spreads over a wide range and also contributes to coating deposition in the area of the next two or more adjacent targets. At the edge of the substrate, there is no contribution from this adjacent target, which results in a reduced coating thickness at the edge of the substrate.

Accordingly, there is a desire to improve PVD deposition, particularly to improve deposition at the edges of large area substrates.

In view of the above, it is provided for sinking on the substrate according to the independent item. Apparatus and method for accumulating material layers. Further aspects, advantages and features are set forth in the dependent claims, the description and the drawings.

According to an embodiment, an apparatus for depositing a material on a substrate is provided. The apparatus includes a deposition array having three or more rotatable cathodes. The deposition array includes: a first outer deposition assembly including at least one first rotatable cathode of the three or more rotatable cathodes; and a second outer deposition assembly opposite the first outer deposition assembly The second outer deposition assembly includes at least one second rotatable cathode of the three or more rotatable cathodes; and an inner deposition assembly including at least one inner rotatable cathode, the inner deposition assembly being located Between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly and the second outer deposition assembly is configured to deposit material at a higher rate than the inner deposition assembly over the same substrate over the same time.

According to an embodiment, an apparatus for depositing a material on a substrate is provided. The apparatus includes a deposition array having three or more cathodes. The deposition array includes: a first outer deposition assembly including at least one first cathode of the three or more cathodes; a second outer deposition assembly, the second outer deposition assembly, the second The outer deposition assembly includes at least one second cathode of the three or more cathodes; and an inner deposition assembly including at least one inner cathode disposed on the first outer deposition assembly and the second outer deposition Between components. At least one of the first outer deposition assembly and the second outer deposition assembly is configured to deposit material at a higher rate than the inner deposition assembly over the same substrate over the same time. According to still further embodiments, the details, features, and aspects as disclosed herein, particularly as disclosed in the accompanying items This embodiment can be combined with other embodiments to create yet another embodiment.

According to a second embodiment, an apparatus for depositing material on a substrate is provided. The apparatus includes a deposition array having three or more rotatable cathodes. The deposition array includes: a first outer deposition assembly including at least one first rotatable cathode of the three or more rotatable cathodes; and a second outer deposition assembly opposite the first outer deposition assembly The second outer deposition assembly includes at least one second rotatable cathode of the three or more rotatable cathodes; and an inner deposition assembly including at least one inner rotatable cathode, the inner deposition assembly being located Between the first outer deposition assembly and the second outer deposition assembly. The first outer deposition assembly defines a first edge portion in the substrate transfer direction, and the second outer deposition assembly defines a second edge portion relative to the first edge portion in the substrate transfer direction, wherein the deposition array further includes a third edge And a fourth edge portion, the third edge portion comprising a first end of the at least one inner cathode of the inner deposition assembly, the fourth edge portion comprising opposite second ends of the cathodes of the inner deposition assembly of the cathode array. a gas distribution system configured to provide first process gas conditions to the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion for uppering the first edge portion, the second edge The rate of deposition of the remaining portion of the portion, the third edge portion, and the fourth edge portion.

According to a second embodiment, an apparatus for depositing material on a substrate is provided. The apparatus includes a deposition array having three or more cathodes. The deposition array includes: a first outer deposition assembly including at least one first cathode of the three or more cathodes; a second outer deposition assembly, the second outer deposition assembly, the second The outer deposition assembly includes the three Or at least one second cathode of the plurality of cathodes; and an inner deposition assembly including at least one inner cathode disposed between the first outer deposition assembly and the second outer deposition assembly. The first outer deposition assembly defines a first edge portion in the substrate transfer direction, and the second outer deposition assembly defines a second edge portion relative to the first edge portion in the substrate transfer direction, wherein the deposition array further includes a third edge And a fourth edge portion, the third edge portion comprising a first end of the at least one inner cathode of the inner deposition assembly, the fourth edge portion comprising opposite second ends of the cathodes of the inner deposition assembly of the cathode array. a gas distribution system configured to provide first process gas conditions to the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion for uppering the first edge portion, the second edge The rate of deposition of the remaining portion of the portion, the third edge portion, and the fourth edge portion. In accordance with still further embodiments, the details, features, and aspects disclosed herein, particularly as disclosed in the accompanying claims, may be combined with the embodiments to produce additional embodiments.

According to another embodiment, a method for depositing a material on a substrate is provided. The method includes providing a deposition array having three or more rotatable cathodes, wherein the deposition array includes a first outer deposition assembly, a second outer deposition assembly, and an inner deposition assembly, the first outer deposition assembly Including at least one first rotatable cathode of the three or more rotatable cathodes, a second outer deposition assembly relative to the first outer deposition assembly, and a second outer deposition assembly including at least one of the three or more rotatable cathodes a second rotatable cathode, the inner deposition assembly including at least one inner rotatable cathode, the inner deposition assembly positioned between the first outer deposition assembly and the second outer deposition assembly; and the first outer deposition assembly and the second outer deposition At least one of the components is higher than the rate of deposition of the component by the inner side, on the substrate Deposited material.

According to another embodiment, a method for depositing a material on a substrate is provided. The method includes providing a deposition array having three or more cathodes, wherein the deposition array includes a first outer deposition assembly, a second outer deposition assembly, and an inner deposition assembly, the first outer deposition assembly including the At least one first cathode of the three or more cathodes, a second outer deposition assembly relative to the first outer deposition assembly, a second outer deposition assembly including at least one second cathode of the three or more cathodes, the inner deposition assembly including At least one inner cathode, the inner deposition component being positioned between the first outer deposition component and the second outer deposition component; and being deposited by the inner side by at least one of the first outer deposition component and the second outer deposition component The rate of the component, depositing material on the substrate. In accordance with still further embodiments, the details, features, and aspects disclosed herein, particularly as disclosed in the accompanying claims, may be combined with the embodiments to produce additional embodiments.

According to yet another embodiment, a method for depositing a material on a substrate is provided. The method includes providing a deposition array having three or more rotatable cathodes, wherein the deposition array includes a first outer deposition assembly, a second outer deposition assembly, and an inner deposition assembly, the first outer deposition assembly including At least one first rotatable cathode of the three or more rotatable cathodes, a second outer deposition assembly relative to the first outer deposition assembly, and a second outer deposition assembly including at least one of the three or more rotatable cathodes A rotatable cathode, the inner deposition assembly including at least one inner rotatable cathode, the inner deposition assembly being positioned between the first outer deposition assembly and the second outer deposition assembly. The first outer deposition assembly defines a first edge portion in the substrate transfer direction, and the second outer deposition assembly defines a second edge portion relative to the first edge portion in the substrate transfer direction, wherein the deposition array further includes a first a third edge portion and a fourth edge portion, the third edge portion comprising a first end of the at least one inner cathode of the inner deposition assembly, the fourth edge portion comprising an opposite second of the cathodes of the inner deposition assembly of the cathode array An end, wherein the deposition material on the substrate is further included in the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion to be higher than the first edge portion, the second edge portion, and the third edge portion The material is deposited at a rate that is the remainder of the portion between the fourth edge portion.

According to yet another embodiment, a method for depositing a material on a substrate is provided. The method includes providing a deposition array having three or more cathodes, wherein the deposition array includes a first outer deposition assembly, a second outer deposition assembly, and an inner deposition assembly, the first outer deposition assembly including the three Or at least one first cathode of the plurality of cathodes, the second outer deposition assembly relative to the first outer deposition assembly, the second outer deposition assembly including at least one second cathode of the three or more cathodes, the inner deposition assembly including at least An inner cathode, the inner deposition assembly is positioned between the first outer deposition assembly and the second outer deposition assembly. The first outer deposition assembly defines a first edge portion in the substrate transfer direction, and the second outer deposition assembly defines a second edge portion relative to the first edge portion in the substrate transfer direction, wherein the deposition array further includes a third edge a portion and a fourth edge portion, the third edge portion comprising a first end of the at least one inner cathode of the inner deposition assembly, the fourth edge portion comprising an opposite second end of the cathodes of the inner deposition assembly of the cathode array, Wherein the deposition material on the substrate is further included in the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion to be higher than the first edge portion, the second edge portion, the third edge portion, and the first portion The rate of deposition of the remaining portion of the four edge portions is deposited. According to still further embodiments, the details, features, and aspects as disclosed herein, particularly as disclosed in the accompanying items, may be combined with this embodiment. To create yet another embodiment.

1‧‧‧ arrow

14‧‧‧Substrate

100‧‧‧ Equipment

102‧‧‧ chamber

103‧‧‧ chamber

104‧‧‧ valve housing

105‧‧‧Valve unit

111‧‧‧ arrow

114‧‧‧ Vehicles

115‧‧‧Anode

116‧‧‧ gas pipeline

121‧‧‧ Magnet assembly

122‧‧‧ cathode

123a‧‧‧Power supply

123b‧‧‧Power supply

123c‧‧‧Power supply

130‧‧‧ Covering shield

133‧‧‧ gas duct or gas pipeline

134‧‧‧Flow Controller

135‧‧‧Flow Controller

136‧‧‧ gas trough

138‧‧‧ gas entry point

141‧‧‧First set of slots

142‧‧‧Second group slot

143‧‧‧ third set of slots

222‧‧‧Deposition array

233‧‧‧ gas ducts or gas pipelines

234‧‧‧Flow Controller

301‧‧‧External sedimentary components

302‧‧‧Outside deposition components

303‧‧‧Inside deposition assembly

333‧‧‧ gas duct or gas pipeline

334‧‧‧Flow controller

410‧‧‧Eccentric configuration

500‧‧‧ controller

Section 501‧‧‧

Section 502‧‧‧

Section 503‧‧‧

Section 504‧‧‧

Section 505‧‧‧

600‧‧‧ method

601‧‧ steps

602‧‧ steps

D‧‧‧Distance

In order to be able to understand the details of the above-described features of the present invention, a more detailed description of the present invention will be made by referring to the embodiments. The accompanying drawings are in relation to embodiments of the invention and are described as follows: Figure 1 shows a schematic view of an apparatus according to embodiments described herein for deposition of material on a substrate.

Figure 2 shows a schematic of an apparatus according to embodiments described herein for deposition of material on a substrate.

3A is a cross-sectional view of a device having a rotating cathode array configuration in accordance with embodiments described herein, wherein the array is supplied by an alternating current source and wherein is provided for controlling at least one item A controller for process parameters.

3B is a cross-sectional view of a device having a rotating cathode array configuration in accordance with embodiments described herein, wherein the array is supplied by a DC power source and wherein is provided for controlling at least one item A controller for process parameters.

4A is a cross-sectional view of a rotating cathode in accordance with embodiments described herein, wherein an eccentric arrangement configured to vary the position of the magnetic component relative to the cathode is shown in a first position.

4B illustrates a cross-sectional view of a rotating cathode in accordance with embodiments described herein, wherein an eccentric configuration configured to vary the position of the magnetic component relative to the cathode is shown in the second position.

Figure 5 shows a schematic of an apparatus according to embodiments described herein for deposition of material on a substrate.

Figure 6 illustrates a flow diagram for deposition of a material on a substrate in accordance with an embodiment described herein.

Various embodiments of the invention will now be described in detail, and one or more examples of the invention are illustrated in the drawings. In the following description of the drawings, the same element symbols mean the same elements. In the following, only the differences of the individual embodiments will be described. The various examples are provided by way of explanation of the invention, and are not intended to limit the invention. In addition, features illustrated or described as part of one embodiment can be used or combined with other embodiments to create a further embodiment. The content is intended to encompass such modifications and variations.

In accordance with an embodiment described herein, and by way of example with reference to FIG. 1, an apparatus 100 is provided for deposition of material on a substrate, apparatus 100 includes a deposition array 222 having three or more deposition arrays 222 Cathode. The deposition array 222 includes a first outer deposition assembly 301, a second outer deposition assembly 302, and an inner deposition assembly 303. The first outer deposition assembly 301 includes at least one of the three or more cathodes, and a second The outer deposition assembly 302 is opposite to the first outer deposition assembly, the second outer deposition assembly 302 includes at least one second cathode of the three or more cathodes, the inner deposition assembly 303 includes at least one inner cathode, and the inner deposition assembly 303 is at the An outer deposition assembly and a second outer deposition assembly. At least one of the first outer deposition assembly and the second outer deposition assembly is configured to deposit material at a rate higher than the inner deposition assembly on the same substrate over the same time, as at the bottom of FIG. Illustratively shown in the figure, in this figure, the deposition rate DR of the entire distance between the first outer deposition assembly 301 and the second outer deposition assembly 302 is plotted. As shown in the figure at the bottom of Figure 1, the illustration in Figure 1 In an exemplary embodiment, both the first outer deposition assembly 301 and the second outer deposition assembly 302 are configured to deposit material at a higher rate than the inner deposition assembly.

Thus, by providing an apparatus having an outer deposition assembly configured to deposit material at a higher rate than the inner deposition assembly, thickness reduction at the edge of the substrate in the transport direction can be substantially avoided. Thus, the apparatus described herein allows for the deposition of a uniform coating on a substrate, particularly on a large area substrate during a static deposition process.

In the present disclosure, and without being limited to any of the specific embodiments described herein, the terms "deposition rate" or "deposition rate" may be understood to mean that the coating material is deposited on the substrate per unit time. the amount.

In the present disclosure, and without being limited to any of the specific embodiments described herein, a deposition array includes a plurality of deposition assemblies, particularly at least three deposition assemblies. The deposition assemblies can be configured to be adjacent to each other. In particular, the deposition assemblies can be configured to be parallel to each other, such as in an equidistant manner between adjacent deposition assemblies.

In the present disclosure, and without being limited to any of the specific embodiments described herein, the deposition assembly can include at least one deposition source for deposition of the material on a substrate, such as a target. The deposition assembly can include at least one selected from the group consisting of a gas distribution system, a cathode (particularly a rotating cathode), a power source, a magnet assembly, and means for controlling at least one processing parameter. The means for controlling at least one processing parameter can, for example, comprise a controller for controlling the power supply of a deposition assembly, and/or a flow controller for controlling the amount of process gas to a deposition assembly, and / Or a component for controlling the magnetic field of a magnet assembly, such as a bias Heart configuration. The eccentric configuration can be configured to vary the position of the magnetic component relative to the cathode.

According to different embodiments that can be combined with other embodiments described herein, sputtering can be by direct current (DC) sputtering, middle frequency (MF) sputtering, radio frequency sputtering, or pulsed sputtering. Way to proceed. As described herein, some deposition processes may advantageously employ intermediate frequency, direct current, or pulsed sputtering. However, other sputtering methods can also be applied. According to embodiments herein, the intermediate frequency is a frequency in the range of 0.5 kHz to 350 kHz, such as a frequency in the range of 10 kHz to 50 kHz.

According to some embodiments that can be combined with other embodiments described herein, sputtering according to the embodiments can be performed with three or more cathodes. However, especially for large area deposition applications, an array of cathodes has six or more cathodes, such as ten or more cathodes. For example, three or more cathode or cathode pairs can be provided, such as four, five, six, or even more cathode or cathode pairs. The array can be provided in a vacuum chamber. Additionally, arrays can typically be defined such that adjacent cathodes or cathodes affect each other, for example by plasma interaction with interaction. According to a typical embodiment, sputtering can be performed by a rotating cathode array such as, but not limited to, a system such as Applied Materials' PiVot.

According to yet another exemplary embodiment that can be combined with other embodiments described herein, static deposition of material on the substrate is accomplished by a reactive sputtering process. That means that the stoichiometric ratio of the film is obtained by sputtering or a metal target, or a semi-metal target, or a compound target using a mixture of a non-reactive gas and a reactive gas. Typically, the embodiments described herein are also applicable to the static deposition of metal or semiconducting layers using only non-reactive gases as process gases. in In this case, the apparatus and method of the embodiments of the present invention may allow for different local process pressures along the horizontal direction, particularly with different process pressures at the edge of the substrate and the inner region of the substrate.

Accordingly, some embodiments described herein are directed to apparatus and methods for depositing a layer of material on a substrate. Especially for reactive sputtering processes, uniformity and/or plasma stability are key parameters to be considered. A reactive sputtering process, for example, during which the material is sputtered under an oxygen atmosphere or another reactive atmosphere to deposit a deposition process comprising a layer of oxide or the like of the sputtered material, such that The reactive sputtering process needs to be controlled in terms of plasma stability. Typically, the reactive deposition process has a hysteresis curve. The reactive deposition process can be, for example, deposition of aluminum oxide (Al ₂ O ₃ ), or yttrium oxide (SiO ₂ ), or indium gallium zinc oxide (IGZO), wherein aluminum, germanium, indium, gallium, or zinc is from the cathode. Sputtering, while oxygen is provided in the plasma. For example, aluminum oxide, cerium oxide, or indium gallium zinc oxide can be deposited on a substrate. The hysteresis curve is typically a function of the deposition parameters, such as the voltage supplied to the sputtering cathode is related to the flow of the process gas (e.g., oxygen).

The embodiments described herein have different plasma densities, or different reactive gas consumptions, at different locations along the substrate transport direction (hereinafter referred to as the horizontal direction) during the static reactive sputtering process. Allows for improved uniformity. These differences also cause uneven deposition on the substrate. The embodiments described herein allow for compensating for variations in film properties in the horizontal direction (i.e., the substrate transfer direction or the direction perpendicular to the axis of rotation of the rotating cathode). Thus, the embodiments described herein are specifically configured to provide a uniform coating over the entire substrate, i.e., the edge of the substrate contained in the direction of transport of the substrate.

According to an embodiment that can be combined with other embodiments described herein, The partial pressure system of at least one of the gas is different in the horizontal direction (i.e., along the substrate transport direction) at the first outer deposition component and/or the second outer deposition component. For example, the partial pressure of a reactive gas such as oxygen is changed. It is also possible to additionally change the pressure of a second process gas, such as a non-reactive or inert gas. Accordingly, the total pressure can be substantially maintained.

According to a typical embodiment, the process gas can comprise a non-reactive gas such as argon (Ar), and a reactive gas such as oxygen (O ₂ ), nitrogen (N ₂ ), Hydrogen (H ₂ ), water (H ₂ O), ammonia (NH ₃ ), ozone (O ₃ ), an activating gas, or the like.

It has been found that for static deposition processes, film properties can be varied in a number of ways that result in non-uniformities. With the above design and process, it is not possible to compensate for any change in film properties in the horizontal direction, particularly at the edges of the substrate to be coated. In order to be able to compensate for local differences in film properties in the horizontal direction, particularly at the edges of the substrate, for static deposition, embodiments of the present invention provide apparatus and methods that enable uniform film thickness across the entire substrate, including the edge of the substrate. Thus, in accordance with an embodiment that can be combined with other embodiments herein, as exemplarily shown in FIG. 2, a gas distribution system is provided that is configured to supply different process gas conditions to a first outer deposition A component and/or a second outer deposition component.

Referring to FIG. 2, there is shown an apparatus for depositing a material on a substrate, the apparatus having a deposition array 222 comprising a first outer deposition assembly 301 and a second outer deposition assembly 302. The first outer deposition assembly 301 is accompanied by at least one first cathode 122, the second outer deposition assembly 302 is opposite the first outer deposition assembly 101, and the second outer deposition assembly 302 is accompanied by at least A second cathode 122. Additionally, in accordance with embodiments described herein, an inner deposition assembly 303 is provided that includes at least one inner cathode 122 that is positioned between the first outer deposition assembly 301 and the second outer deposition assembly 302 . In the embodiment exemplarily shown in Fig. 2, the first outer deposition assembly 301 and the second outer deposition assembly 302 each comprise a cathode, wherein the inner deposition assembly 301 comprises ten cathodes.

In accordance with embodiments described herein, the apparatus includes a process gas distribution system configured to provide a process gas to the deposition array 222. In particular, as exemplarily shown in FIG. 2, the gas distribution system can be configured to independently control the flow rate of the process gas for the outer deposition assemblies 301, 302 and the inner deposition assembly 303. Thus, process parameters at the edges of the substrate to be coated, such as gas partial pressure and/or amount of process gas supplied, can be modified and adjusted independently of process parameters at the inner region of the substrate to be coated, This achieves a uniform coating thickness. According to this, it is possible to substantially avoid the thickness reduction at the edge of the substrate in the conveying direction. In FIG. 2, the substrate transfer direction is indicated by an arrow 111. This is particularly advantageous for deposition processes in which the substrate is placed for a static deposition process. According to some embodiments, which can be combined with other embodiments described herein, the flow rate of the at least one process gas can vary independently for at least one of the first outer deposition component and the second outer deposition component, for example by The flow controller is exemplarily shown in Fig. 2.

According to embodiments described herein, the process gas distribution system is configured to provide a first process gas condition to the first outer deposition assembly 301 and the second outer deposition assembly 302 and to provide a second process gas condition to The inner deposition assembly 303. By way of example with reference to Figure 2, in accordance with embodiments described herein, a device A gas distribution system is included that is configured to provide a process gas in a triple horizontal section, wherein the first section includes a first outer deposition assembly 301 and the second section includes a second outer deposition assembly 302, a third section An inner deposition assembly 303 is included. The gas distribution system can include a plurality of gas entry points 138 located in the plurality of gas lines 116. The plurality of gas lines 116, such as conduits having openings therein, can be placed between the pair of cathodes 122 of the deposition array 222, along the horizontal direction, parallel to their long axes.

According to embodiments described herein, the gas distribution system can include a first flow controller 234 and a second flow controller 134 configured to control to the first outer deposition assembly 301 and The amount of process gas of the second outer deposition assembly 302, the second flow controller 134 is configured to control the amount of process gas to the inner deposition assembly 303. In the exemplary embodiment of Fig. 2, three flow controllers are shown: one second flow controller 134 for controlling the amount of process gas to the inner deposition assembly 303, and two first flow controllers 234 for respectively The amount of process gas to the first outer deposition assembly 301 and the amount of process gas to the second outer deposition assembly 302 are controlled. According to an embodiment, the two first flow controllers 234 for controlling the amount of process gas to the first outer deposition assembly 301 and the second outer deposition assembly 302 may be equivalent. Alternatively, the two first flow controllers 234 for controlling the amount of process gas to the first outer deposition assembly 301 and the second outer deposition assembly 302 can be configured differently.

As exemplarily shown in Fig. 2, the process gas distribution system can have two gas tanks 136 containing process gases. The flow rate and/or amount of non-reactive gas and/or reactive gas present in the process gas can be controlled by flow controller 135. The process gas passes through the flow controllers 134 and 234, respectively. Body conduits or gas conduits 133 and 233 are fed into a plurality of gas entry points 138 located in a plurality of gas lines 116. According to still further embodiments which can be combined with other embodiments described herein, the flow rate of one or more of the process gases, i.e., the amount of one or more of the process gases, can also be controlled by another flow rate. Components to control, such as needle valves. Accordingly, flow controllers, needle valves, and/or other flow rate control elements can be used to independently control the flow rate of one or more process gases for a plurality of sections of the gas distribution system, or for gas distribution systems The plurality of segments independently control the amount of one or more process gases.

According to embodiments that can be combined with other embodiments described herein, the gas distribution system can be configured to provide a different process gas mixture to the first outer deposition assembly 301 and the second outer deposition assembly 302 than the inner deposition assembly. Especially with the change of reactive gases. Thus, by way of example with reference to FIG. 3A, a first outer deposition assembly 301 can be coupled to a first set of slots 141 for providing a first composition of reactive gas, and a second outer deposition assembly 302 can be coupled for providing A second set of channels 142 of the second composition of reactive gases, the inner deposition assembly can be coupled to a third set of channels 143 for providing a third composition of reactive gas to the inner deposition assembly. According to an embodiment, the reactive gas supplied to the first composition of the first outer deposition assembly 301 may correspond to the reactive gas supplied to the second composition of the second outer deposition assembly 302. Accordingly, an embodiment of the apparatus, as exemplarily shown in FIG. 3A, is configured to independently provide different process gases for the first outer deposition assembly 301, the second outer deposition assembly 302, and the inner deposition assembly 303. The flow rate, and/or the amount of different process gases, and/or different process gas mixtures, especially with changes in reactive gases.

3A shows a deposition apparatus in accordance with embodiments described herein A schematic view of the section of 100. Illustratively, a vacuum chamber 102 is shown for layer deposition therein. As indicated in Figure 3A, an additional chamber 103 can be provided adjacent to the chamber 102. The vacuum chamber 102 can be separated from adjacent chambers by a valve having a valve housing 104 and a valve unit 105. After the carrier 114 with the substrate 14 thereon is added to the vacuum chamber 102 as indicated by the arrow 1, the valve unit 105 can be closed. Accordingly, the atmosphere in the vacuum chambers 102 and 103 can be created by, for example, a vacuum vacuum connected to the chambers 102 and 103, and/or by adding a process gas to the chamber. In the sedimentary zone, it is independently controlled. As noted above, for large area applications, large area substrates are supported by the carrier. However, the embodiments described herein are not limited thereto, and other transfer elements for transporting the substrate through the processing device or processing system may be used.

Within the chamber 102, a delivery system is provided to transport the carrier 114 having the substrate 14 thereon into or out of the chamber 102. The term "substrate" as used herein shall encompass a non-flexible substrate such as a glass substrate, a wafer, a sheet of transparent crystal such as sapphire or the like, or a glass plate.

As depicted in FIG. 3A, a deposition source 122 is provided in the chamber 102. The deposition source can for example be a rotatable cathode having a target of material to be deposited on the substrate. According to an embodiment that can be combined with other embodiments described herein, the cathode can be a rotatable cathode with the magnet assembly 121 therein. Magnetron sputtering can be performed for layer deposition. As exemplarily shown in FIG. 3A, each pair of adjacent cathodes can be connected to a power source 123. Depending on the nature of the deposition process within the range of the target array, or each pair of adjacent cathodes can be connected to an alternating current source, or each pair of adjacent cathodes can be connected to a direct current source. According to some embodiments that can be combined with other embodiments described herein, the cathode 122 is connected to an alternating current source such that the cathode can be biased in an alternating manner. An alternating current source 123, such as an intermediate frequency power source, can be provided, for example, to deposit an aluminum oxide (Al ₂ O ₃ ) layer. In such a case, since a complete circuit comprising a cathode and an anode is provided by the pair of cathodes 122, the cathode does not require an additional anode and the anode can be removed, for example.

Illustratively with reference to FIG. 3B, according to other embodiments, the apparatus can include a cathode 122 and an anode 115 that can be electrically coupled to a DC power source. According to further embodiments, which can be combined with other embodiments described herein, the deposition apparatus can comprise an anode extending in a horizontal direction, or spaced apart in a horizontal direction as exemplarily shown in FIG. 3B At least three anodes.

Sputtering from the target, for example, sputtering from a target for a transparent conductive oxide film, is typically performed by direct current sputtering. The cathode can be connected to the DC power source along with the anode to collect electrons during sputtering. According to some embodiments that can be combined with other embodiments described herein, the gas line 116 can be provided on one side of the anode 115 or a shield, and the cathode can be provided on the other side of the anode or shield (see, for example, 3A)). Gas can be provided in the deposition zone through an opening in the anode or shield (not shown). According to an alternative embodiment, a gas line or conduit and cathode may also be provided on the same side of the anode or shield.

According to still further embodiments which can be combined with other embodiments described herein, one or more of the cathodes can each have their respective independent voltage supply. For example, for at least one, some, or all of the cathodes, one power source can be provided for each cathode. Accordingly, at least one first cathode can be connected to a first power source and a second cathode can be connected to a second power source. According to still further embodiments which can be combined with other embodiments described herein, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or nitrogen Molybdenum (MoN) materials can be deposited by a DC sputtering process.

As further illustrated in FIG. 3B, a plurality of gas lines 116 and a cover shield 130 are also provided in the chamber 102. As exemplarily shown in Figures 3A and 3B, the gas distribution system of apparatus 100 can include six gas tanks 136 containing process gases. The flow rate of the non-reactive gas and/or the reactive gas present in the process gas can be controlled by the flow controller 135. The process gas may be fed to a plurality of gas entry points 138 (not shown) located in the plurality of gas lines 126 via gas conduits or gas conduits 133, 233, and 333 via flow controllers 134, 234, and 334, respectively. Accordingly, embodiments of the apparatus described herein allow for differently provided different process gas flow rates and/or different process gas mixtures to the first outer deposition assembly 301, the second outer deposition assembly 302, and the inner deposition assembly 303, respectively. . Accordingly, an apparatus for depositing material on a substrate is provided that is capable of substantially avoiding a reduction in thickness at the edge of the substrate in the transport direction.

As shown in Figures 3A and 3B, the embodiments described herein can be provided for a static deposition process, such as valve unit 105 being closed during deposition, with a plurality of rotating cathodes, such as three or more rotating cathodes. When the deposition process is closed, the substrate 14 is moved into a position in the deposition zone for deposition. Ability to stabilize process pressure. Once the process is stabilized, the cathode magnet assembly 121 can be rotated forward to deposit the correct stoichiometric ratio of material to be deposited onto the static substrate until the end of deposition.

Illustratively with reference to Figures 3A and 3B, the apparatus according to embodiments described herein can include a controller 500 configured to control at least one of the first outer deposition assembly and the second outer deposition assembly parameter. Additionally, the controller 500 can be configured to control at least one process parameter of the inner deposition assembly number. According to embodiments described herein, a deposition assembly (eg, a first outer deposition assembly, a second outer deposition assembly, and an inner deposition assembly) can include at least one cathode (particularly a rotating cathode), a gas distribution system, or a gas A section of the distribution system, and a magnetic component. Thus, in accordance with embodiments described herein, the at least one processing parameter can be controlled by controller 500. According to embodiments described herein, the at least one processing parameter is selected from at least one of the group consisting of: power supplied to the first outer deposition component and the second outer deposition component, supplied to the first outer side The amount of process gas of the deposition assembly and the second outer deposition assembly, and the magnetic fields of the first outer deposition assembly and the second outer deposition assembly. Accordingly, an apparatus for depositing material on a substrate is provided that is configured to enable the material to deposit component 301 and/or on the first outer side over the same substrate at the same time. The second outer deposition assembly (302) is deposited at a higher rate than the deposition assembly 303 on the inner side. Accordingly, an apparatus for depositing material on a substrate is provided to substantially avoid thickness reduction at the edge of the substrate in the transport direction.

According to an embodiment that can be combined with other embodiments described herein, the controller 500 is configured to control a first power source for supplying the first power to the first outer deposition assembly and the second outer deposition Component. The controller can also be configured to control a second power source for supplying the second power to the inner deposition assembly. Referring to the exemplary embodiments of FIGS. 3A and 3B, the first power source for supplying the first power to the first outer deposition component and the second outer deposition component can include two individual power sources 123a, 123c for supplying the first A power is applied to the first outer deposition assembly and the second outer deposition assembly.

As depicted in Figures 3A and 3B, a deposition source 122 is provided in the chamber 102. The deposition source can be, for example, a rotatable cathode having a base to be deposited The target of the material on the board. Typically, the cathode can be a rotatable cathode with the magnet assembly 121 therein. According to this, magnetron sputtering can be performed to deposit a material on the substrate. As exemplarily shown in Figures 3A and 3B, the deposition process can be performed with a rotating cathode and a rotating magnet assembly (i.e., a rotating yoke therein).

As used herein, "magnetron sputtering" means sputtering using a magnetron, that is, a magnet assembly, that is, a unit capable of generating a magnetic field. Typically, such a magnet assembly is comprised of one or more permanent magnets. These permanent magnets are typically disposed in the rotatable target or coupled to the planar target in such a manner that free electrons are captured in the resulting magnetic field generated beneath the surface of the rotatable target. Such a magnet assembly can also be configured to be coupled to a planar cathode. According to a typical embodiment, magnetron sputtering can be implemented with a dual magnetron cathode (i.e., cathode 122) such as, but not limited to, a TwinMagTM cathode assembly. In particular, for MF sputtering (intermediate frequency sputtering) from a target, a target assembly including a double cathode can be applied. According to typical embodiments, the cathode in the deposition chamber can be replaceable. According to this, the target is replaced after the material to be sputtered has been consumed.

According to different embodiments that can be combined with other embodiments described herein, sputtering can be performed by direct current sputtering, MF (intermediate frequency) sputtering, radio frequency sputtering, or pulsed sputtering. As described herein, some deposition processes may advantageously employ intermediate frequency, direct current, or pulsed sputtering. However, other sputtering methods can also be applied.

In Figures 3A and 3B, a plurality of cathodes 122 are shown, along with a magnet assembly 121 or a magnetron provided in the cathode. According to some embodiments that can be combined with other embodiments described herein, sputtering according to the embodiments can be performed with three or more cathodes. However, especially for large-area deposition applications, An array of cathode or cathode pairs. For example, three or more cathode or cathode pairs can be provided, such as three, four, five, six, or even more cathode or cathode pairs. The array can be provided in a vacuum chamber. Additionally, arrays can typically be defined such that adjacent cathodes or cathodes affect each other, for example by plasma interaction with interaction.

For a rotatable cathode, the magnet assembly can be provided in the back tube or along with the target material tube. Figure 3A shows three pairs of cathodes, each providing a deposition source. The cathode pair can have an alternating current source for, for example, medium frequency sputtering, radio frequency sputtering, or the like. Especially for large-area deposition processes and for industrial-scale deposition processes, medium frequency sputtering can be performed to provide the desired deposition rate. According to an embodiment, as exemplarily shown in FIGS. 3A and 3B, the magnet assemblies of the cathodes in the vacuum chamber 102 can have substantially the same rotational position, or at least can be all directed toward the substrate 14 or Corresponding deposition area. Typically, the deposition zone is a range or region that is accompanied by a deposition system that is provided and/or configured for deposition of the material on the substrate (expected deposition).

However, according to different embodiments that can be combined with other embodiments described herein, the plasma source in one chamber can have varying plasma positions during deposition of the layer on the substrate (for rotating cathodes) Is the rotation position). For example, the magnet assembly or magnetron can be moved relative to each other and/or relative to the substrate, for example in an oscillating or back-and-forward manner to increase the uniformity of the layer to be deposited. For example, the magnet assembly of the first outer deposition assembly and the second outer deposition assembly can be moved differently than the magnet assembly of the inner deposition assembly to achieve the first outer deposition assembly and the second outer deposition assembly and the inner deposition. Higher material deposition rates compared to components.

According to an embodiment that can be combined with other embodiments described herein, the first outer deposition assembly 301 includes a first magnet assembly for generating a first magnetic field, and the second outer deposition assembly 302 includes a first a second magnet assembly for generating the first magnetic field, and the inner deposition assembly includes a second magnet assembly for generating a second magnetic field. The first magnetic field can be different from the second magnetic field by at least one means selected from the group consisting of: selection of magnetic material, selection of geometry of the magnetic component, controllable electromagnet, and control of the first A component of a magnetic field and/or a second magnetic field. The element for controlling the first magnetic field and/or the second magnetic field can be, for example, an eccentric configuration 410 configured to vary the position of the magnetic assembly 121 relative to the cathode, as exemplified by FIGS. 4A and 4B. Show the person. In accordance with the embodiments described herein, the magnetic fields of the outer deposition assemblies 301 and 302, as exemplarily shown in Figures 3A and 3B, can be controlled and adjusted to achieve comparison at the outer deposition assemblies 301 and 302. A high deposition rate, as such, can substantially avoid a reduction in thickness at the edges of the layer deposited on the substrate.

In FIG. 4A, a cross-sectional view of a rotating cathode 122 in accordance with embodiments described herein is illustrated, wherein the eccentric configuration 410 is at a location where the distance D between the magnetic assembly 121 and the cathode 122 is the minimum. 4B illustrates a cross-sectional view of a rotating cathode 122 in accordance with embodiments described herein, wherein the eccentric configuration 410 is at a location where the distance D between the magnetic assembly 121 and the cathode 122 is the maximum.

In accordance with some embodiments that can be combined with other embodiments described herein, the embodiments described herein can be used for display PVD, i.e., sputter deposition on large area substrates for the display market. According to some embodiments, the large face The substrate or the respective carrier, wherein the carrier has a plurality of substrates and may have a size of at least 0.67 square meters. Typically, the size can be from about 0.67 square meters (0.73 meters x 0.92 meters, 4.5th generation) to about 8 square meters, more typically from about 2 square meters to about 9 square meters or even up to 12 Square meters. Typically, the so-called substrate or carrier provided in accordance with the structures, devices (e.g., cathode assemblies) and methods of the embodiments described herein are large area substrates as described herein. For example, a large area substrate or carrier can be a 4.5th generation corresponding to a substrate of approximately 0.67 square meters (0.73 meters by 0.92 meters), corresponding to a substrate of approximately 1.4 square meters (1.1 meters x 1.3) The fifth generation of the meter, the 7.5th generation corresponding to the substrate of about 4.29 square meters (1.95 meters x 2.2 meters), and the substrate corresponding to about 5.7 square meters (2.2 meters x 2.5 meters) The 10th generation of the 8.5th generation, or even the substrate (2.85 meters x 3.05 meters) corresponding to approximately 8.7 square meters. Larger generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner.

According to still further embodiments capable of being combined with other embodiments described herein, the target material can be selected from the group consisting of aluminum, tantalum, niobium, molybdenum, niobium, titanium, indium, gallium, zinc, tin. , silver, and copper. In particular, the target material can be selected from the group consisting of indium, gallium, and zinc. Reactive sputtering processes typically provide deposited oxides of these target materials. However, it is also possible to deposit a nitride or an oxynitride.

According to embodiments described herein, the method provides for sputter deposition where the substrate is positioned for a static deposition process. Typically, static deposition and dynamic deposition can be distinguished, particularly for large area substrate processing, such as processing of large area substrates in the vertical direction. The substrates and/or carriers described herein, and for use herein, in accordance with some embodiments that can be combined with other embodiments described herein The device of the gas distribution system can be configured for vertical substrate processing. The term "vertical substrate processing" is understood to be distinguished from horizontal substrate processing. That is, vertical substrate processing is about the direction in which the carrier and substrate are substantially perpendicular during substrate processing, with a few degrees of deviation from the precise vertical direction (eg, up to 10° or even up to 15°) still considered a vertical substrate. deal with. With a slightly tilted vertical substrate orientation, for example, a more stable substrate handling can be brought about, or the risk of particles contaminating the deposited layer can be reduced. Alternatively, the gas distribution system according to embodiments described herein can also be used for substrate orientations other than substantially perpendicular, such as horizontal substrate orientation. For a horizontal substrate orientation, the cathode array will, for example, also be substantially horizontal.

Dynamic sputtering, that is, an inline process in which the substrate is continuously or quasi-continuously moved adjacent to the deposition source, since the process can be stabilized before the substrate moves into the deposition zone, and then passes through the substrate It will be easier to maintain the same source of deposition. However, dynamic deposition can have other disadvantages such as particle generation. This is especially true for thin film transistor backplane deposition. According to embodiments described herein, static sputtering can provide for processing, for example, a thin film transistor in which the plasma can be stabilized prior to deposition on the original substrate. It should be noted that the terms of the static deposition process that differ from the dynamic deposition process do not preclude any movement of the substrate that would be appreciated by those of ordinary skill. The static deposition process can include, for example, a static substrate position during deposition, a substrate position that oscillates during deposition, an average substrate position that is substantially constant during deposition, a substrate position that trembles during deposition, a substrate position that sways during deposition, The cathode provides a deposition process in one chamber for it (ie, a predetermined deposition process for which the cathode group is provided), wherein the deposition chamber is during layer deposition An atmosphere having a seal relative to an adjacent chamber (eg, by closing a valve unit that separates the chamber from an adjacent chamber), or a combination thereof.

Accordingly, the static deposition process can be understood as a deposition process accompanied by a static substrate position, a deposition process accompanied by a substantially static substrate position, or a deposition process accompanied by a partially static substrate position. The static deposition process, as described herein, can be clearly distinguished from the dynamic deposition process without the need for the substrate to be completely free of any movement during deposition during the static deposition process. According to still further embodiments which can be combined with other embodiments described herein, deviations from completely static substrate positions, such as oscillations, shaking, or otherwise, as still static deposition, are still considered by those of ordinary skill. Moving the substrate can additionally or alternatively be provided by movement of a cathode or cathode array, such as shaking, oscillating, or the like. The substrate and cathode (or cathode array) are movable relative to one another, such as in the substrate transport direction, in a lateral direction substantially perpendicular to the substrate transport direction, or both.

In accordance with an embodiment as described herein in combination with other embodiments described herein, apparatus 100, as exemplarily shown in FIG. 5, includes a deposition array having three or more cathodes, A first outer deposition assembly defines a first edge portion 501 in the substrate transfer direction, and a second outer deposition assembly defines a second edge portion 502 relative to the first edge portion in the substrate transfer direction. Additionally, the deposition array includes a third edge portion 503 comprising a first end of at least one inner cathode of the inner deposition assembly and a fourth edge portion 504 comprising a remaining portion 505 of the cathode array The opposite second end of the cathode. The extension of the third edge portion 503 and/or the fourth edge portion in the axial direction of the cathode may correspond to at least 5% of the total length of the cathode, respectively. It is at least 10% of the total length of the cathode, especially at least 15% of the total length of the cathode. Accordingly, an apparatus for depositing material on a substrate is provided which is capable of substantially avoiding a reduction in thickness at the edge of the substrate in the transport direction and at the edge of the substrate perpendicular to the transport direction.

As shown in FIG. 5, a further embodiment of the apparatus described herein provides a process gas distribution system having a first edge portion 501, a second edge portion 502, and a portion of the deposition array 222. A section of the three edge portion 503, the fourth edge portion 504, and the remaining portion 505. As exemplarily shown in FIG. 5, a plurality of gas entry points 138 located in the plurality of gas lines 116 may be provided. For example, each gas line can have three or more openings, such as six or more openings, such as six to twenty openings. The plurality of gas lines 116 can be placed between the cathodes 122, for example, parallel to their long axes along the horizontal direction. As exemplarily shown in Fig. 5, the process gas can be supplied by five flow controllers 134, each providing a flow controller to each of the sections. Accordingly, the amount of process gas supplied to each individual portion can be independently controlled. Accordingly, the partial pressure of the process gas supplied to the individual portions can be independently adjusted.

Although not shown in detail in Figure 5, each of the five flow controllers 134 can be coupled to two tanks containing process gases, similar to the embodiments described in relation to Figures 2, 3A and 3B. Narrative. Accordingly, the flow rate and/or amount of non-reactive gas and/or reactive gas present in the process gases located in the individual portions 501, 502, 503, 504, and 505 can be controlled by the flow controller 135 An exemplary description made with respect to the embodiment shown in FIG. 2 is shown. Alternatively, the flow controllers 134 connected to the first edge portion 501, the second edge portion 502, the third edge portion 503, and the fourth edge portion 504 can be connected to a single unit A gas tank, or a single gas tank battery containing two tanks for each process gas. A flow controller 134 coupled to the remainder of the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion may be coupled to another single gas reservoir, or the other comprising a separate A single gas tank group for two tanks of each process gas.

According to an embodiment, there is provided an apparatus for depositing a material on a substrate, the apparatus having a gas distribution system configured to provide a first process gas condition to the first edge portion, the second edge portion, The three edge portion and the fourth edge portion are for depositing material at a rate higher than the remaining portion between the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion. Thus, in accordance with embodiments described herein, an apparatus is provided to provide a uniform coating over the entire substrate, i.e., the edge of the substrate contained in the direction of transport of the substrate and the edge of the substrate perpendicular to the direction of substrate transfer. .

The embodiment corresponding to Figures 2, 3A and 3B shows a gas distribution system with a gas line for each of the two targets. However, the gas distribution system according to embodiments described herein can have any number of gas lines. For example, a gas distribution system can have four gas lines to thirteen gas lines. Similarly, each gas line can have two to thirty gas entry points. For example, each gas line can have three to twenty gas entry points, such as five to ten, such as nine gas entry points.

Accordingly, the embodiments described herein allow the deposition assembly to control and adjust the process gas composition in the transfer direction. Additionally, the embodiments described herein allow control and adjustment of process gas conditions at the edge portions of the cathode array as described herein, particularly as described with respect to the embodiment illustrated in FIG. Embodiments described herein Provides precise control over the deposition of a layer having a substantially constant thickness throughout the substrate, including its edges.

According to typical embodiments, the cathode array may comprise three or more rotating sputtering targets, in particular the cathode array may comprise eight rotating sputtering targets, and more particularly the cathode array may comprise twelve rotating sputtering targets. Typically, the cathodes of the cathode array are spaced apart from each other such that their long axes are parallel to each other, and wherein the major axis systems are disposed equidistant from the substrate to be placed.

An embodiment of a method 600 for depositing a material on a substrate is shown in FIG. In step 601, a deposition array deposition array is provided, the deposition array having three or more cathodes, wherein the deposition array includes a first outer deposition assembly 301, a second outer deposition assembly 302, and an inner deposition assembly 303, An outer deposition assembly 301 includes at least one first cathode of the three or more cathodes, a second outer deposition assembly 302 relative to the first outer deposition assembly 301, and a second outer deposition assembly 302 including the three or more cathodes At least one second cathode, the inner deposition assembly 303 includes at least one inner cathode, between the inner deposition assembly 303, the first outer deposition assembly 301, and the second outer deposition assembly 302. In step 602, the material on the substrate is deposited at a higher rate than the deposition of the component by the inner side by at least one of the first outer deposition assembly 301 and the second outer deposition assembly 302. Accordingly, a method for depositing a material on a substrate is provided, with the thickness reduction at the edge of the substrate in the transport direction being substantially avoided. In particular, the methods described herein allow for the deposition of a uniform coating on a substrate, particularly on a large area substrate during a static deposition process.

According to an embodiment of the method described herein, the material is deposited on the substrate by at least one of the first outer deposition assembly and the second outer deposition assembly, including Controlling at least one processing parameter selected from the group consisting of controlling power supplied to the first outer deposition component and/or the second outer deposition component, controlling supply to the first outer deposition component, and/or the second outer deposition The amount of process gas of the assembly, a first magnetic field that controls the first outer deposition assembly and/or the second outer deposition assembly, and a second magnetic field that controls the deposition assembly on the inner side. Accordingly, a method is provided for depositing a material on a substrate in which the material can be deposited on the same substrate at the first outer deposition component 301 and/or the second outer deposition component (at the same time) 302) is deposited at a higher rate than the deposition of the component 303 on the inside. Accordingly, the method provides for depositing material on the substrate such that a reduction in thickness at the edge of the substrate in the transport direction can be substantially avoided.

According to an embodiment capable of being combined with other embodiments described herein, controlling the first magnetic field and/or the second magnetic field may comprise at least one selected from the group consisting of: selecting a magnetic material, selecting a magnetic configuration Geometry, control of an electromagnet, and use of an element for controlling the first magnetic field and/or the second magnetic field. For example, the element for controlling the first magnetic field and/or the second magnetic field can be an eccentric configuration configured to vary the position of the magnetic component relative to the cathode, as described above in relation to Figures 4A and 4B. An exemplary narrative.

According to further embodiments of the method for depositing a material on a substrate as described herein, step 601 can include providing a deposition array in which the first outer deposition assembly defines a direction in the substrate transfer direction a first edge portion, the second outer deposition assembly defines a second edge portion relative to the first edge portion in the substrate transfer direction, wherein the deposition array further includes a third edge portion and a fourth edge portion, the third edge portion a first end comprising at least one inner cathode of the inner deposition assembly, the fourth edge portion comprising a cathode phase of a remaining portion of the cathode array The second end of the pair. According to this, the step 602 may be included on the substrate, and the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion are higher than the first edge portion, the second edge portion, and the third edge portion. The material is deposited at a rate that is the remainder of the portion between the fourth edge portion. Thus, in accordance with embodiments described herein, a method is provided for providing a uniform coating over the entire substrate, i.e., the edge of the substrate contained in the direction of transport of the substrate and the edge of the substrate perpendicular to the direction of substrate transfer.

According to embodiments described herein, the material is deposited on a substrate where the substrate is placed for a static deposition process. Typically, the material of the target can be deposited in the form of an oxide, nitride, or oxynitride of the target material, that is, deposited in a reactive sputtering process.

While the foregoing is a description of the embodiments of the present invention, the subject matter of the invention, and the scope of the invention is defined by the scope of the following claims.

100‧‧‧ Equipment

122‧‧‧ cathode

222‧‧‧Deposition array

301‧‧‧External sedimentary components

302‧‧‧Outside deposition components

303‧‧‧Inside deposition assembly

Claims (20)

An apparatus (100) for depositing a material on a substrate, comprising: a deposition array (222) having three or more rotatable cathodes (122), wherein the deposition array includes a first outer deposition assembly (301) The first outer deposition assembly includes at least one first rotatable cathode of the three or more rotatable cathodes; a second outer deposition assembly (302) opposite the first outer deposition assembly The deposition assembly includes at least one second rotatable cathode of the three or more rotatable cathodes; and an inner deposition assembly (303) including at least one inner rotatable cathode, the inner deposition assembly being located at the Between an outer deposition assembly and the second outer deposition assembly, wherein at least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) are configured for use at the same time The material is deposited on the same substrate at a higher rate than the inner deposition assembly (303). The apparatus (100) of claim 1, wherein the deposition array comprises a gas distribution system configured to provide a first process gas condition to the first outer deposition assembly (301) and the second The outer deposition assembly (302) deposits material at a higher rate than the inner deposition assembly (303) on the same substrate over the same time. The device (100) of claim 2, wherein the gas distribution system further comprises a first flow controller (234) and a second flow controller (134), the first flow controller configured to control The first outer deposition assembly (301) and the second outer deposition The amount of process gas of the assembly (302) is configured to control the amount of process gas for the inner deposition assembly (303). The apparatus (100) of claim 1 or 2, further comprising a controller (500) configured to control at least one process parameter of the first outer deposition component and the second outer deposition component. The apparatus (100) of claim 4, wherein the at least one processing parameter is selected from at least one of the group consisting of: power supplied to the first outer deposition component and the second outer deposition component, The amount of process gas of the first outer deposition assembly and the second outer deposition assembly, and the magnetic fields at the first outer deposition assembly and the second outer deposition assembly. The device (100) of claim 4, wherein the controller is configured to control a first power source for supplying a first power to the first outer deposition component and the second outer deposition component The controller is further configured to control a second power source for supplying a second power to the inner deposition assembly. The apparatus (100) of claim 1 or 2, wherein the first outer deposition assembly comprises a first magnet assembly for generating a first magnetic field, the second outer deposition assembly comprising a second magnet And a second magnet assembly for generating the first magnetic field, and wherein the inner deposition assembly includes a second magnet assembly for generating a second magnetic field. The apparatus (100) of claim 7, wherein the first magnetic field is different from the second magnetic field due to at least one means selected from the group consisting of: selection of magnetic material, selection of geometry of the magnetic component, An electromagnet that can be controlled, an element for controlling the first magnetic field and/or the second magnetic field. The apparatus (100) of claim 8, wherein the means for controlling the first magnetic field and/or the second magnetic field is an eccentric configuration configured to vary a magnetic component relative to the cathodes position. The device (100) of claim 2, wherein the first outer deposition assembly defines a first edge portion in a substrate transfer direction, the second outer deposition assembly defining a first edge portion in the substrate transfer direction relative to the first edge portion a second edge portion, wherein the deposition array further includes a third edge portion and a fourth edge portion, the third edge portion including a first end of the at least one inner cathode of the inner deposition assembly, the fourth edge portion An opposite second end of the cathodes of the inner deposition assembly of the cathode array, wherein the gas distribution system is configured to provide the first process gas condition to the first edge portion, the second edge portion, The third edge portion and the fourth edge portion are configured to be deposited at a rate higher than a remaining portion of the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion material. The apparatus (100) of claim 1 or 2, wherein the deposition array comprises eight or more rotating sputtering targets. The apparatus (100) of claim 1 or 2, wherein the deposition array comprises twelve rotating sputtering targets. The apparatus (100) of claim 1 or 2, wherein the three or more cathodes of the deposition array are spaced apart from each other such that their long axes are parallel to each other, and wherein the long axis systems are in a waiting state The substrates are arranged equidistantly. An apparatus (100) for depositing a material on a substrate, the apparatus comprising: a deposition array (222) having three or more rotatable cathodes (122), wherein the deposition array includes a first outer deposition assembly (301), the first outer deposition assembly includes at least one first rotatable cathode of the three or more rotatable cathodes; and a second outer deposition assembly (302) opposite to the first outer deposition assembly a second outer deposition assembly comprising at least one second rotatable cathode of the three or more rotatable cathodes; and an inner deposition assembly (303) including at least one inner rotatable cathode, the inner deposition assembly being located Between the first outer deposition assembly and the second outer deposition assembly, wherein at least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) are configured for use in the same Material is deposited on the same substrate at a higher rate than the inner deposition assembly (303), wherein the deposition array includes a gas distribution system configured to provide a first process Body conditions to the first outer deposition assembly (301) and the second outer deposition assembly (302) to deposit material at a higher rate than the inner deposition assembly (303) on the same substrate over the same time , Wherein the apparatus further includes a controller (500) configured to control at least one process parameter of the first outer deposition component and the second outer deposition component, wherein the at least one processing parameter is selected Freely at least one of the group consisting of: power supplied to the first outer deposition assembly and the second outer deposition assembly, an amount of process gas supplied to the first outer deposition assembly and the second outer deposition assembly, and A magnetic field is deposited on the first outer deposition component and the second outer deposition component. A method (600) for depositing a material on a substrate, comprising: providing a deposition array (601) having three or more rotatable cathodes, wherein the deposition array includes a first outer deposition component, a second outer deposition assembly, and an inner deposition assembly, the first outer deposition assembly including at least one first rotatable cathode of the three or more rotatable cathodes, the second outer deposition assembly being opposite the first outer portion a deposition assembly, the second outer deposition assembly including at least one second rotatable cathode of the three or more rotatable cathodes, the inner deposition assembly including at least one inner rotatable cathode, the inner deposition assembly being located on the first outer side Between the deposition assembly and the second outer deposition assembly, and by at least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) being higher than the inner deposition assembly (303) At a rate, a material (602) is deposited on the substrate. The method of claim 15 (600), wherein the deposition array comprises a gas distribution system configured to provide a first process gas condition to the first outer deposition assembly (301) and the second The outer deposition assembly (302) is at a higher speed than the inner deposition assembly (303) on the same substrate at the same time Rate deposition material. The method (600) of claim 15, wherein the material (602) is deposited on the substrate by the at least one of the first outer deposition assembly (301) and the second outer deposition assembly (302), including control At least one processing parameter selected from the group consisting of: controlling power supplied to the first outer deposition assembly and/or the second outer deposition assembly, controlling supply to the first outer deposition assembly, and/or the The amount of process gas of the two outer deposition assemblies, a first magnetic field that controls the first outer deposition assembly and/or the second outer deposition assembly, and a second magnetic field that controls the inner deposition assembly. The method of claim 17 (600), wherein controlling the first magnetic field and/or the second magnetic field comprises at least one selected from the group consisting of: selecting a magnetic material, selecting a geometry of a magnetic configuration, An electromagnet is controlled and an element for controlling the first magnetic field and/or the second magnetic field is used. The method (600) of claim 18, wherein the means for controlling the first magnetic field and/or the second magnetic field is an eccentric configuration configured to vary a magnetic component relative to the cathodes position. The method (600) of claim 16, wherein the first outer deposition component defines a first edge portion in a substrate transfer direction, the second outer deposition component defining a first edge portion in the substrate transfer direction relative to the first edge portion a second edge portion, wherein the deposition array further includes a third edge portion and a fourth edge portion, the third edge portion including a first end of the at least one inner cathode of the inner deposition assembly, the first a fourth edge portion comprising opposite ends of the cathodes of the inner deposition assembly of the cathode array, wherein a deposition material (602) on the substrate is further included in the first edge portion, the second edge portion, the first The three edge portions and the fourth edge portion deposit material at a rate higher than a remaining portion of the first edge portion, the second edge portion, the third edge portion, and the fourth edge portion.