TW201603330A - Light-emitting device - Google Patents
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- 239000002096 quantum dot Substances 0.000 claims abstract description 44
- 230000005284 excitation Effects 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 230000007423 decrease Effects 0.000 claims abstract description 5
- 235000019646 color tone Nutrition 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Filters (AREA)
Abstract
Description
本發明係關於一種發光裝置。 The present invention relates to a light emitting device.
近年來，使用發光二極體之發光裝置之進步突出，用於液晶之背光源、大型顯示器等。尤其是藉由短波長光之發光元件之半導體材料之發展，可獲得短波長之光，因此可使用其激發螢光體而獲得更加多種多樣之波長之光。 In recent years, advances in light-emitting devices using light-emitting diodes have been prominent, and are used for backlights of liquid crystals, large-sized displays, and the like. In particular, by the development of a semiconductor material of a light-emitting element of short-wavelength light, light of a short wavelength can be obtained, so that it is possible to use a phosphor to excite a phosphor to obtain a light of a wider variety of wavelengths.
先前，已知使用量子點之發光裝置。例如，專利文獻1中記載有如下發光裝置，其具備：藍色LED(Light Emitting Diode，發光二極體)、及密封藍色LED且含有包含量子點之樹脂組合物之密封部。 Previously, light-emitting devices using quantum dots have been known. For example, Patent Document 1 discloses a light-emitting device including a blue LED (Light Emitting Diode) and a sealing portion that seals the blue LED and contains a resin composition including quantum dots.
[專利文獻1]日本專利特開2010-126596號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-126596
然而，對使用量子點之發光裝置要求自發光裝置出射之光之色調不會視光之出射方向而不同。具體而言，例如，要求自發光裝置沿光軸方向出射之光與沿相對於光軸傾斜之方向出射之光之色調不會互不相同。 However, the light-emitting device using quantum dots requires that the color of the light emitted from the light-emitting device does not differ depending on the direction in which the light is emitted. Specifically, for example, it is required that the light emitted from the light-emitting device in the optical axis direction and the light emitted in the direction oblique to the optical axis do not differ from each other.
然而，專利文獻1所揭示之發光裝置係於樹脂組合物中含有分散劑，使自藍色LED出射之光均勻地照射至量子點而提高轉換效率者， 並未改善色調不均。 However, the light-emitting device disclosed in Patent Document 1 contains a dispersant in the resin composition, and the light emitted from the blue LED is uniformly irradiated to the quantum dots to improve the conversion efficiency. No uneven color tone was improved.
本發明提供一種發光裝置，其係使用量子點者，且色調不均較小。 The present invention provides a light-emitting device which uses quantum dots and has a small hue unevenness.
本發明之發光裝置具備發光部及光源。發光部包含量子點。光源配置於發光部之俯視下之中央部。光源對發光部出射量子點之激發波長之光。於發光部之至少周緣部，發光部之厚度朝向外側逐漸減小。 A light-emitting device of the present invention includes a light-emitting portion and a light source. The light emitting portion contains quantum dots. The light source is disposed at a central portion of the light emitting portion in a plan view. The light source emits light of an excitation wavelength of the quantum dot to the light emitting portion. At least the peripheral portion of the light-emitting portion, the thickness of the light-emitting portion gradually decreases toward the outside.
本發明之發光裝置亦可進而具備：裝置本體，其具有收容光源及發光部之凹部；及罩蓋構件，其覆蓋凹部，將裝置本體與光源及發光部一同密封。於該情形時，發光部較佳為設置於罩蓋構件之凹部側之表面上。 The light-emitting device of the present invention may further include: a device body having a concave portion that houses the light source and the light-emitting portion; and a cover member that covers the concave portion and that seals the device body together with the light source and the light-emitting portion. In this case, the light-emitting portion is preferably provided on the surface of the concave portion side of the cover member.
本發明之發光裝置亦可進而具備如下單元：其具有第1主壁部、與第1主壁部隔開間隔而相對向之第2主壁部、及將第1主壁部與第2主壁部連接之側壁部，且該單元係與光源相隔而配置。於該情形時，發光部於單元內可設置於第1或第2主壁部上。 The light-emitting device of the present invention may further include a unit having a first main wall portion, a second main wall portion facing away from the first main wall portion, and a first main wall portion and a second main portion The wall portion is connected to the side wall portion, and the unit is disposed apart from the light source. In this case, the light-emitting portion may be provided in the first or second main wall portion in the unit.
於本發明之發光裝置中，光源較佳為對發光部出射發散光。 In the light-emitting device of the present invention, it is preferable that the light source emits divergent light to the light-emitting portion.
於本發明之發光裝置中，較佳為於俯視下，發光部之面積大於光源。 In the light-emitting device of the present invention, it is preferable that the area of the light-emitting portion is larger than the light source in plan view.
於本發明之發光裝置中，較佳為自發光部出射量子點之發光與自光源出射而透過發光部之光之混合光。 In the light-emitting device of the present invention, it is preferable that the light-emitting portion emits the light emitted from the quantum dot and the light that is emitted from the light source and transmitted through the light-emitting portion.
根據本發明，可提供一種發光裝置，其係使用量子點者，且色調不均較小。 According to the present invention, it is possible to provide a light-emitting device which uses quantum dots and has a small unevenness in hue.
1‧‧‧發光裝置 1‧‧‧Lighting device
1a‧‧‧發光裝置 1a‧‧‧Lighting device
1b‧‧‧發光裝置 1b‧‧‧Lighting device
1c‧‧‧發光裝置 1c‧‧‧Lighting device
1d‧‧‧發光裝置 1d‧‧‧Lighting device
10‧‧‧裝置本體 10‧‧‧ device body
11‧‧‧第1構件 11‧‧‧1st component
12‧‧‧第2構件 12‧‧‧2nd component
12a‧‧‧貫通孔 12a‧‧‧through hole
13‧‧‧凹部 13‧‧‧ recess
13a‧‧‧側壁 13a‧‧‧ Sidewall
13b‧‧‧底壁 13b‧‧‧ bottom wall
20‧‧‧光源 20‧‧‧Light source
30‧‧‧發光部 30‧‧‧Lighting Department
40‧‧‧罩蓋構件 40‧‧‧ Cover member
50‧‧‧密封空間 50‧‧‧ sealed space
60‧‧‧單元 60‧‧‧ unit
61‧‧‧第1主壁部 61‧‧‧1st main wall
62‧‧‧第2主壁部 62‧‧‧2nd main wall
63‧‧‧側壁部 63‧‧‧ Side wall
70‧‧‧樹脂 70‧‧‧Resin
C‧‧‧中心線 C‧‧‧ center line
圖1係第1實施形態之發光裝置之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view showing a light-emitting device of a first embodiment.
圖2係第2實施形態之發光裝置之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device of a second embodiment.
圖3係第3實施形態之發光裝置之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device of a third embodiment.
圖4係第4實施形態之發光裝置之模式性剖視圖。 Fig. 4 is a schematic cross-sectional view showing a light-emitting device of a fourth embodiment.
圖5係第5實施形態之發光裝置之模式性剖視圖。 Fig. 5 is a schematic cross-sectional view showing a light-emitting device of a fifth embodiment.
以下，對實施本發明之較佳之形態之一例進行說明。但下述實施形態僅為例示。本發明並不受下述實施形態任何限定。 Hereinafter, an example of a preferred embodiment for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited to the following embodiments.
又，實施形態等中參照之各圖式中，實質上具有同一功能之構件係標註同一符號進行參照。又，實施形態等中參照之圖式係模式性地進行記載者。圖式中描繪之物體之尺寸之比率等有與現實之物體之尺寸之比率等不同之情況。圖式相互間亦有物體之尺寸比率等不同之情況。具體之物體之尺寸比率等應參考以下之說明進行判斷。 In the respective drawings, which are referred to in the embodiments and the like, members having substantially the same functions are denoted by the same reference numerals. Further, the drawings referred to in the embodiments and the like are schematically described. The ratio of the size of the object depicted in the drawing may be different from the ratio of the size of the actual object. There are also cases where the size ratio of objects is different from each other. The specific size ratio of the object should be judged by referring to the following instructions.
圖1係第1實施形態之發光裝置1之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view of a light-emitting device 1 according to a first embodiment.
發光裝置1係於激發光入射時出射與激發光不同之波長之光的裝置。發光裝置1亦可為出射激發光與藉由激發光之照射而產生之光之混合光者。 The light-emitting device 1 is a device that emits light of a wavelength different from that of the excitation light when the excitation light is incident. The light-emitting device 1 may also be a mixed light that emits excitation light and light generated by irradiation of excitation light.
發光裝置1具有裝置本體10。裝置本體10具有第1構件11及第2構件12。第2構件12設置於第1構件11上。於第2構件12設置有開口至第1構件11之貫通孔12a。藉由該貫通孔12a構成凹部13。再者，貫通孔12a朝向第1構件11側而前端變細。因此，凹部13之側壁13a相對於第1構件11之主面傾斜。 The light emitting device 1 has a device body 10. The device body 10 has a first member 11 and a second member 12. The second member 12 is provided on the first member 11. The second member 12 is provided with a through hole 12a that opens to the first member 11. The recess 13 is formed by the through hole 12a. Further, the through hole 12a is tapered toward the first member 11 side. Therefore, the side wall 13a of the recessed portion 13 is inclined with respect to the main surface of the first member 11.
裝置本體10可由任何材料構成。裝置本體10例如可由低溫共燒陶瓷等陶瓷、金屬、樹脂、玻璃等構成。構成第1構件11之材料與構成第2構件12之材料可相同，亦可不同。 The device body 10 can be constructed of any material. The apparatus body 10 can be made of, for example, ceramics such as low-temperature co-fired ceramics, metal, resin, glass, or the like. The material constituting the first member 11 may be the same as or different from the material constituting the second member 12.
於裝置本體10之凹部13之底壁13b上配置有光源20。光源20例如可由LED(Light Emitting Diode)元件、LD(Laser Diode，雷射二極體)元件等構成。於本實施形態中，對光源20由LED構成之例進行說明。 A light source 20 is disposed on the bottom wall 13b of the recess 13 of the apparatus body 10. The light source 20 can be configured by, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like. In the present embodiment, an example in which the light source 20 is constituted by an LED will be described.
於凹部13內配置有發光部30。該發光部30與光源20係收容於凹部13。發光部30係以使來自光源20之光入射之方式配置。具體而言，於發光裝置1中，發光部30係設置於罩蓋構件40之凹部13側之表面上。發光部30以覆蓋光源20之方式配置於光源20之上方。 The light emitting unit 30 is disposed in the recess 13 . The light emitting unit 30 and the light source 20 are housed in the concave portion 13. The light-emitting portion 30 is disposed such that light from the light source 20 is incident. Specifically, in the light-emitting device 1, the light-emitting portion 30 is provided on the surface of the cover member 40 on the concave portion 13 side. The light emitting unit 30 is disposed above the light source 20 so as to cover the light source 20 .
光源20對發光部30出射發散光。光源20對發光部30出射發光部30所含之量子點之激發波長之光。再者，自光源20出射之光未必必須僅為量子點之激發波長之光。自光源20出射之光例如除了量子點之激發波長之光，亦可包含其以外之波長之光。 The light source 20 emits divergent light to the light emitting unit 30. The light source 20 emits light of an excitation wavelength of a quantum dot included in the light-emitting portion 30 to the light-emitting portion 30. Furthermore, the light emitted from the light source 20 does not necessarily have to be only the excitation wavelength of the quantum dots. The light emitted from the light source 20 may include light of a wavelength other than the wavelength of the excitation point of the quantum dot.
於俯視下，光源20配置於發光部30之中央部。光源20以與在發光部30之厚度方向延伸之中心線C重疊之方式配置。發光部30之面積大於光源20。發光部30之面積較佳為光源20之面積之2倍~400倍，更佳為20倍~75倍。若發光部30之面積過小，則於俯視下，容易存在通過發光部30而出射之部分與未通過發光部30而出射之部分，色調不均變大。另一方面，若發光部30之面積過大，則自光源20出射之光變得不易照射至發光部30之周邊部，色調不均變大。 The light source 20 is disposed at a central portion of the light-emitting portion 30 in plan view. The light source 20 is disposed to overlap the center line C extending in the thickness direction of the light-emitting portion 30. The area of the light emitting portion 30 is larger than the light source 20. The area of the light-emitting portion 30 is preferably from 2 times to 400 times, more preferably from 20 times to 75 times, the area of the light source 20. When the area of the light-emitting portion 30 is too small, the portion that is emitted through the light-emitting portion 30 and the portion that is not emitted through the light-emitting portion 30 are likely to be formed in a plan view, and the color unevenness is increased. On the other hand, when the area of the light-emitting portion 30 is too large, the light emitted from the light source 20 is less likely to be irradiated to the peripheral portion of the light-emitting portion 30, and the color unevenness is increased.
發光部30包含量子點。發光部30可包含一種量子點，亦可包含複數種量子點。 The light emitting unit 30 includes quantum dots. The light emitting portion 30 may include a quantum dot and may also include a plurality of quantum dots.
再者，於量子點之激發光入射時，量子點出射與激發光不同之波長之光。自量子點出射之光之波長依存於量子點之粒徑。即，可藉由改變量子點之粒徑而調整所獲得之光之波長。因此，量子點之粒徑係設為與所欲獲得之光之波長對應之粒徑。量子點之粒徑通常為2nm~10nm左右。 Furthermore, when the excitation light of the quantum dot is incident, the quantum dot emits light of a wavelength different from that of the excitation light. The wavelength of the light emerging from the quantum dots depends on the particle size of the quantum dots. That is, the wavelength of the obtained light can be adjusted by changing the particle diameter of the quantum dot. Therefore, the particle diameter of the quantum dot is set to a particle diameter corresponding to the wavelength of the light to be obtained. The particle size of the quantum dots is usually about 2 nm to 10 nm.
例如，作為若照射波長300nm~440nm之紫外~近紫外之激發光則發出藍色之可見光(波長440nm~480nm之螢光)的量子點之具體例，可列舉粒徑為2.0nm~3.0nm左右之CdSe/ZnS之微晶等。作為若照射波長300nm~440nm之紫外~近紫外之激發光或波長440nm~ 480nm之藍色之激發光則發出綠色之可見光(波長為500nm~540nm之螢光)的量子點之具體例，可列舉粒徑為3.0nm~3.3nm左右之CdSe/ZnS之微晶等。作為照射若波長300nm~440nm之紫外~近紫外之激發光或波長440nm~480nm之藍色之激發光則發出黃色之可見光(波長為540nm~595nm之螢光)的量子點之具體例，可列舉粒徑為3.3nm~4.5nm左右之CdSe/ZnS之微晶等。作為若照射波長300nm~440nm之紫外~近紫外之激發光或波長440nm~480nm之藍色之激發光則發出紅色之可見光(波長為600nm~700nm之螢光)的量子點之具體例，可列舉粒徑為4.5nm~10nm左右之CdSe/ZnS之微晶等。 For example, a specific example of a quantum dot which emits blue visible light (fluorescence of a wavelength of 440 nm to 480 nm) when irradiated with ultraviolet to near-ultraviolet excitation light having a wavelength of 300 nm to 440 nm is exemplified by a particle diameter of about 2.0 nm to 3.0 nm. Crystallites of CdSe/ZnS, etc. As an excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or a wavelength of 440 nm~ Specific examples of the quantum dots of the 480 nm blue excitation light emitting green visible light (fluorescence having a wavelength of 500 nm to 540 nm) include crystallites of CdSe/ZnS having a particle diameter of about 3.0 nm to 3.3 nm. Specific examples of quantum dots that emit yellow visible light (fluorescence with a wavelength of 540 nm to 595 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or blue light having a wavelength of 440 nm to 480 nm are exemplified. The crystallites of CdSe/ZnS having a diameter of about 3.3 nm to 4.5 nm are used. Specific examples of quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm or blue light having a wavelength of 440 nm to 480 nm are exemplified. The crystallites of CdSe/ZnS having a diameter of about 4.5 nm to 10 nm are used.
於本實施形態中，發光部30為固體。具體而言，發光部30包含分散有量子點之樹脂。量子點較佳為大致均勻地分散於分散介質中。藉由使量子點大致均勻地分散於分散介質中，可抑制來自發光部30之光量之面內不均。作為可較佳使用之樹脂之具體例，例如可列舉聚矽氧樹脂、環氧樹脂、丙烯酸系樹脂等。 In the present embodiment, the light-emitting portion 30 is solid. Specifically, the light-emitting portion 30 includes a resin in which quantum dots are dispersed. The quantum dots are preferably substantially uniformly dispersed in the dispersion medium. By dispersing the quantum dots substantially uniformly in the dispersion medium, the in-plane unevenness of the amount of light from the light-emitting portion 30 can be suppressed. Specific examples of the resin which can be preferably used include, for example, a polyoxyxylene resin, an epoxy resin, and an acrylic resin.
再者，為了進一步抑制來自發光部30之光量之面內不均，發光部30除了樹脂與量子點以外，例如亦可進而含有光分散劑等。 In addition, in order to further suppress the in-plane unevenness of the amount of light from the light-emitting portion 30, the light-emitting portion 30 may further contain, for example, a light dispersing agent in addition to the resin and the quantum dot.
再者，發光部30亦可由複數層發光層之積層體構成。於該情形時，複數層發光層亦可含有包含出射波長互不相同之光之量子點的複數層發光層。例如，可由含有包含出射第1波長之光之量子點之第1發光層、及包含出射第2波長之光之量子點之第2發光層的複數層發光層之積層體構成發光部30。 Further, the light-emitting portion 30 may be composed of a laminate of a plurality of light-emitting layers. In this case, the plurality of light-emitting layers may also include a plurality of light-emitting layers including quantum dots of light having mutually different wavelengths. For example, the light-emitting portion 30 may be constituted by a laminate including a first light-emitting layer including quantum dots that emit light of the first wavelength and a plurality of light-emitting layers including a second light-emitting layer that emits quantum dots of light of the second wavelength.
凹部13係藉由罩蓋構件40封住。該罩蓋構件40與裝置本體10接合。藉由罩蓋構件40與裝置本體10而劃分形成密封空間50。光源20與發光部30係密封於該密封空間50內。 The recess 13 is sealed by the cover member 40. The cover member 40 is engaged with the device body 10. The sealed space 50 is divided by the cover member 40 and the apparatus body 10. The light source 20 and the light emitting unit 30 are sealed in the sealed space 50.
且說，就減少來自發光部之光量之面內不均等觀點而言，亦認為較佳為將發光部設為均勻之厚度。然而，於設置厚度均勻之發光部之 情形時，於發光部中位於光源之正上方之部分與其以外之部分，入射至發光部之光於發光部內之光程長度不同。例如，於發光部中位於光源之正上方之部分，光向發光部之入射角垂直。即，於位於光源之正上方之部分，光向發光部之入射角為0°。因此，於位於光源之正上方之部分，光程長度變短。光向發光部之入射角於俯視下越離開光源越大。因此，光程長度隨著於俯視下離開光源而變長。因此，於發光部之厚度均勻之情形時，朝向發光部之入射光於發光部內之光程長度於俯視下越離開光源越長。因此，於俯視下，發光部中靠近光源之部分中，光程長度變短，因此藉由量子點吸收之激發光之光量變少，來自量子點之發光之光量亦變少。另一方面，於發光部中離開光源之部分中，光程長度變長，因此藉由量子點吸收之激發光之光量變多，來自量子點之發光之光量亦變多。因此，於出射來自光源之光與量子點之發光之混合光的發光裝置中，自發光部出射之光之色調視發光部之位置而不同。具體而言，於發光部中，於俯視下靠近光源之部分與離開光源之部分，自發光裝置出射之光之色調不同。 In addition, from the viewpoint of reducing the in-plane unevenness of the amount of light from the light-emitting portion, it is considered to be preferable to make the light-emitting portion uniform. However, in the case of providing a light-emitting portion having a uniform thickness In some cases, the portion of the light-emitting portion that is located directly above the light source and the other portion thereof have different optical path lengths of light incident on the light-emitting portion in the light-emitting portion. For example, in a portion of the light-emitting portion located directly above the light source, the incident angle of the light toward the light-emitting portion is perpendicular. That is, the incident angle of the light toward the light-emitting portion is 0° in a portion directly above the light source. Therefore, the optical path length becomes shorter at a portion directly above the light source. The angle of incidence of the light toward the light-emitting portion increases as it leaves the light source in a plan view. Therefore, the optical path length becomes longer as it leaves the light source in plan view. Therefore, when the thickness of the light-emitting portion is uniform, the optical path length of the incident light toward the light-emitting portion in the light-emitting portion is longer as it goes away from the light source in plan view. Therefore, in the portion of the light-emitting portion that is close to the light source in the plan view, the optical path length is shortened, so that the amount of light of the excitation light absorbed by the quantum dots is reduced, and the amount of light emitted from the quantum dots is also reduced. On the other hand, in the portion of the light-emitting portion that is separated from the light source, the optical path length becomes long, and therefore the amount of light of the excitation light absorbed by the quantum dots increases, and the amount of light emitted from the quantum dots also increases. Therefore, in the light-emitting device that emits the mixed light of the light from the light source and the light emission of the quantum dots, the color of the light emitted from the light-emitting portion differs depending on the position of the light-emitting portion. Specifically, in the light-emitting portion, the portion of the light-emitting portion that is close to the light source in a plan view and the portion that is separated from the light source have different colors of light emitted from the light-emitting device.
於發光裝置1中，於發光部30之至少周緣部，發光部30之厚度朝向外側逐漸減小。因此，發光部30之周緣部之光程長度較短。因此，發光部30之中央部之光程長度與發光部30之周緣部之光程長度之差較小。因此，自發光部30之中央部出射之光之色調與自發光部30之周緣部出射之光之色調之差較小。因此，於發光裝置1中，色調不均較小。 In the light-emitting device 1, at least the peripheral portion of the light-emitting portion 30, the thickness of the light-emitting portion 30 gradually decreases toward the outside. Therefore, the optical path length of the peripheral portion of the light-emitting portion 30 is short. Therefore, the difference between the optical path length of the central portion of the light-emitting portion 30 and the optical path length of the peripheral portion of the light-emitting portion 30 is small. Therefore, the difference between the hue of the light emitted from the central portion of the light-emitting portion 30 and the hue of the light emitted from the peripheral portion of the light-emitting portion 30 is small. Therefore, in the light-emitting device 1, the hue unevenness is small.
就進一步減小發光裝置1之色調不均之觀點而言，自光源出射之光於發光部30之光程長度較佳為於發光部30之任一部分均大致一定。因此，例如，亦有如本實施形態般，發光部30之厚度較佳為自俯視下之中心朝向外側單調遞減之情況。 From the viewpoint of further reducing the unevenness of the color tone of the light-emitting device 1, the optical path length of the light emitted from the light source in the light-emitting portion 30 is preferably substantially constant at any portion of the light-emitting portion 30. Therefore, for example, as in the present embodiment, the thickness of the light-emitting portion 30 is preferably monotonously decreasing from the center in a plan view toward the outer side.
以下，對本發明之較佳之實施形態之其他例進行說明。於以下之說明中，對具有與上述第1實施形態實質上相同之功能之構件標註相同 之符號加以參照，並省略說明。 Hereinafter, other examples of preferred embodiments of the present invention will be described. In the following description, members having substantially the same functions as those of the above-described first embodiment are labeled the same. The symbols are referred to and the description is omitted.
圖2係第2實施形態之發光裝置1a之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device 1a according to a second embodiment.
第1實施形態之發光裝置1中，對發光部30之厚度較佳為自俯視下之中心朝向外側單調遞減之例進行了說明。但本發明並不限定於該構成。例如，如圖2所示，於發光裝置1a中，除發光部30之周緣部以外之部分之厚度大致一定。發光部30之厚度於周緣部朝向外側逐漸減小。 In the light-emitting device 1 of the first embodiment, the thickness of the light-emitting portion 30 is preferably a monotonously decreasing from the center in a plan view toward the outer side. However, the present invention is not limited to this configuration. For example, as shown in FIG. 2, in the light-emitting device 1a, the thickness of the portion other than the peripheral portion of the light-emitting portion 30 is substantially constant. The thickness of the light-emitting portion 30 gradually decreases toward the outer side at the peripheral portion.
再者，於發光部之一部分亦可存在厚度朝向外側增加之部分。 Further, a portion of the light-emitting portion may have a portion whose thickness increases toward the outside.
圖3係第3實施形態之發光裝置1b之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device 1b according to a third embodiment.
於第1及第2實施形態中，對在罩蓋構件40之凹部13內側之表面形成有發光部30之例進行了說明。但本發明並不限定於該構成。如圖3所示，於發光裝置1b中，發光部30以封住光源20之方式設置於凹部13內。於該情形時，亦可藉由構成為於發光部30之至少周緣部使發光部30之厚朝向外側逐漸減小而減小色調不均。 In the first and second embodiments, an example in which the light-emitting portion 30 is formed on the inner surface of the concave portion 13 of the cover member 40 has been described. However, the present invention is not limited to this configuration. As shown in FIG. 3, in the light-emitting device 1b, the light-emitting portion 30 is provided in the recess 13 so as to enclose the light source 20. In this case, it is also possible to reduce the unevenness of the color tone by gradually reducing the thickness of the light-emitting portion 30 toward the outside at least in the peripheral portion of the light-emitting portion 30.
圖4係第3實施形態之發光裝置1c之模式性剖視圖。 Fig. 4 is a schematic cross-sectional view showing a light-emitting device 1c according to a third embodiment.
如圖4所示，發光裝置1c具備單元60。單元60具有第1主壁部61、第2主壁部62、及側壁部63。第1主壁部61與第2主壁部62係隔開間隔而相對向。側壁部63係設置於第1主壁部61與第2主壁部62之間。側壁部63分別與第1及第2主壁部61、62接合。側壁部63與第1及第2主壁部61、62例如可使用陽極接合、焊接、或無機接合材料而接合。 As shown in FIG. 4, the light-emitting device 1c is provided with a unit 60. The unit 60 has a first main wall portion 61, a second main wall portion 62, and a side wall portion 63. The first main wall portion 61 and the second main wall portion 62 are opposed to each other with a space therebetween. The side wall portion 63 is provided between the first main wall portion 61 and the second main wall portion 62. The side wall portion 63 is joined to the first and second main wall portions 61 and 62, respectively. The side wall portion 63 and the first and second main wall portions 61 and 62 can be joined by, for example, anodic bonding, welding, or an inorganic bonding material.
第1及第2主壁部61、62例如可由玻璃、陶瓷等而構成。側壁部63例如可由玻璃、陶瓷、金屬、被金屬塗層覆蓋之玻璃材料或陶瓷材料等構成。 The first and second main wall portions 61 and 62 may be made of, for example, glass, ceramics or the like. The side wall portion 63 may be made of, for example, glass, ceramic, metal, a glass material covered with a metal coating, a ceramic material, or the like.
發光部30設於第1及第2主壁部61、62各者之內壁上。具體而言， 於本實施形態中，設置於位於與光源20相反側之第1主壁部61之內壁上。但是，發光部亦可設置於光源側之第2主壁部之內壁上。 The light emitting unit 30 is provided on the inner wall of each of the first and second main wall portions 61 and 62. in particular, In the present embodiment, it is provided on the inner wall of the first main wall portion 61 on the side opposite to the light source 20. However, the light-emitting portion may be provided on the inner wall of the second main wall portion on the light source side.
藉由如本實施形態般，將發光部30配置於與光源20相隔之單元60內，而使來自光源20之熱不易傳遞至發光部30。因此，可抑制發光部30之熱劣化。 According to the present embodiment, the light-emitting unit 30 is disposed in the unit 60 spaced apart from the light source 20, and heat from the light source 20 is not easily transmitted to the light-emitting unit 30. Therefore, thermal deterioration of the light-emitting portion 30 can be suppressed.
圖5係第5實施形態之發光裝置之模式性剖視圖。 Fig. 5 is a schematic cross-sectional view showing a light-emitting device of a fifth embodiment.
於第1及第2實施形態中，對由空間構成位於光源20與發光部30之間之密封空間50之例進行了說明。但本發明並不限定於該構成。 In the first and second embodiments, an example in which the sealed space 50 between the light source 20 and the light-emitting portion 30 is formed by a space has been described. However, the present invention is not limited to this configuration.
如圖5所示，第5實施形態之發光裝置1d中，於密封空間50中填充有樹脂70。於該情形時，可減小樹脂70與發光部30之間之折射率差、及樹脂70與光源20之間之折射率差。因此，可提高光之出射效率。 As shown in FIG. 5, in the light-emitting device 1d of the fifth embodiment, the resin 70 is filled in the sealed space 50. In this case, the difference in refractive index between the resin 70 and the light-emitting portion 30 and the difference in refractive index between the resin 70 and the light source 20 can be reduced. Therefore, the light emission efficiency can be improved.
樹脂70例如可由聚矽氧樹脂、環氧樹脂、丙烯酸系樹脂等構成。 The resin 70 can be composed of, for example, a polyoxyxylene resin, an epoxy resin, an acrylic resin, or the like.
樹脂70亦可包含光分散劑。於該情形時，可進一步提高自光源20向發光部30之光之均勻性。 The resin 70 may also contain a light dispersing agent. In this case, the uniformity of light from the light source 20 to the light-emitting portion 30 can be further improved.
1‧‧‧發光裝置 1‧‧‧Lighting device
10‧‧‧裝置本體 10‧‧‧ device body
11‧‧‧第1構件 11‧‧‧1st component
12‧‧‧第2構件 12‧‧‧2nd component
12a‧‧‧貫通孔 12a‧‧‧through hole
13‧‧‧凹部 13‧‧‧ recess
13a‧‧‧側壁 13a‧‧‧ Sidewall
13b‧‧‧底壁 13b‧‧‧ bottom wall
20‧‧‧光源 20‧‧‧Light source
30‧‧‧發光部 30‧‧‧Lighting Department
40‧‧‧罩蓋構件 40‧‧‧ Cover member
50‧‧‧密封空間 50‧‧‧ sealed space
C‧‧‧中心線 C‧‧‧ center line
Claims (6)
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| KR (1) | KR20170016815A (en) |
| CN (1) | CN106133927A (en) |
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- 2015-05-29 TW TW104117511A patent/TW201603330A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI823371B (en) * | 2020-01-31 | 2023-11-21 | 日商日亞化學工業股份有限公司 | Planar light source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2015190242A1 (en) | 2017-04-20 |
| KR20170016815A (en) | 2017-02-14 |
| CN106133927A (en) | 2016-11-16 |
| WO2015190242A1 (en) | 2015-12-17 |
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