TW201545202A - Patterning method and patterning apparatus - Google Patents
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Abstract
Description
本發明是有關於一種半導體的製程方法及裝置，且特別是有關於一種圖案化的方法與圖案化的裝置。The present invention relates to a method and apparatus for fabricating a semiconductor, and more particularly to a method of patterning and patterning.
隨著半導體產業中之高密度記憶體（例如，浮動閘極記憶體、電荷捕捉記憶體、非揮發性記憶體及嵌入式記憶體）之需求增加，記憶體單元之設計已自平面結構轉變為三維結構，藉以在有限的晶片面積內增加儲存容量。As the demand for high-density memory in the semiconductor industry (eg, floating gate memory, charge trap memory, non-volatile memory, and embedded memory) increases, the design of memory cells has changed from planar to The three-dimensional structure is used to increase the storage capacity within a limited wafer area.
在三維結構中，為了追求較高的儲存密度，而不斷地增加堆疊層的層數，使得蝕刻過程中溝渠的高寬比不斷地增加。然而，非等向性蝕刻等蝕刻步驟中所使用的離子能到達的深度有其限制，因而容易造成蝕刻不完全，而在所蝕刻的溝渠底部留下梯狀殘留物。若上述梯狀殘留物在後續的製程中沒有被移除，則製成元件時會有不正常導通，而產生短路的情形。In the three-dimensional structure, in order to pursue a higher storage density, the number of layers of the stacked layers is continuously increased, so that the aspect ratio of the trenches is continuously increased during the etching process. However, the depth at which ions used in an etching step such as an isotropic etching has a limit is limited, so that etching is incompletely caused, and a ladder-like residue is left at the bottom of the etched trench. If the above-mentioned ladder-like residue is not removed in the subsequent process, the component is not normally turned on when the component is formed, and a short circuit occurs.
本發明提供一種圖案化的方法與圖案化的裝置，能夠蝕刻完全，避免梯狀殘留物之殘留。The present invention provides a patterning method and a patterning device that can be completely etched to avoid residue of ladder-like residues.
本發明的圖案化方法如下。在一材料層上形成圖案化罩幕層，其具有第一開口裸露出部分的材料層。接著進行前處理製程，以對第一開口裸露的材料層改質，而形成一改質區。然後進行第一蝕刻製程，以至少移除改質區的材料層，而形成第二開口。The patterning method of the present invention is as follows. A patterned mask layer is formed on a layer of material having a layer of material in the exposed portion of the first opening. A pre-treatment process is then performed to modify the exposed material layer of the first opening to form a modified region. A first etching process is then performed to remove at least the material layer of the modified region to form a second opening.
在本發明的一實施例中，所述前處理製程包括離子植入製程。此時，第一蝕刻製程可包括一電漿蝕刻製程。所述離子植入製程例如使用Ar、N2 、P或其組合做為離子源。所述離子植入製程的能量例如為5keV至60keV。所述離子植入的劑量例如為1´1015 至 5´1016 ion/cm2 。In an embodiment of the invention, the pre-treatment process includes an ion implantation process. At this time, the first etching process may include a plasma etching process. The ion implantation process uses, for example, Ar, N 2 , P, or a combination thereof as an ion source. The energy of the ion implantation process is, for example, 5 keV to 60 keV. The dose of the ion implantation is, for example, 1 ́10 15 to 5 ́10 16 ion/cm 2 .
在本發明的一實施例中，所述離子植入製程的傾斜角例如為0度至7度。In an embodiment of the invention, the tilt angle of the ion implantation process is, for example, 0 to 7 degrees.
在本發明的一實施例中，所述圖案化方法更包括在進行前處理製程之前，以所述圖案化罩幕層為罩幕進行第二蝕刻製程，以移除第一開口裸露的部分該材料層。In an embodiment of the invention, the patterning method further includes performing a second etching process with the patterned mask layer as a mask to remove the exposed portion of the first opening before performing the pre-processing process. Material layer.
在本發明的一實施例中，所述圖案化方法更包括在進行第一蝕刻製程之後，以所述圖案化罩幕層為罩幕進行第三蝕刻製程，以移除第二開口裸露的部分該材料層。在進行第三蝕刻製程之後，可重複進行所述前處理製程與第一蝕刻製程。In an embodiment of the invention, the patterning method further includes performing a third etching process with the patterned mask layer as a mask to remove the exposed portion of the second opening after performing the first etching process The layer of material. After the third etching process is performed, the pre-processing process and the first etching process may be repeated.
本發明的圖案化裝置包括多室腔體、蝕刻單元、改質單元及輸送單元。多室腔體至少具有第一室與第二室。蝕刻單元位於第一室中，用以蝕刻一材料層。改質單元位於第二室中，用以改質所述材料層。輸送單元位在第一室與第二室之間，用以在所述蝕刻單元與改質單元之間傳輸該材料層。The patterning device of the present invention includes a multi-chamber cavity, an etching unit, a reforming unit, and a transport unit. The multi-chamber cavity has at least a first chamber and a second chamber. An etch unit is located in the first chamber for etching a layer of material. The modifying unit is located in the second chamber for modifying the layer of material. A delivery unit is located between the first chamber and the second chamber for transporting the layer of material between the etching unit and the modifying unit.
在本發明的一實施例中，所述改質單元包括一離子植入機台，且所述蝕刻單元包括一電漿蝕刻機台。In an embodiment of the invention, the modifying unit includes an ion implantation machine, and the etching unit includes a plasma etching machine.
本發明所提供的圖案化方法能夠蝕刻完全，避免蝕刻殘留等問題。The patterning method provided by the present invention can completely etch and avoid problems such as etching residue.
本發明所提供的圖案化裝置可以在不破真空的環境下，進行蝕刻製程與改質製程，使圖案化製程可以在同一腔體中進行。The patterning device provided by the invention can perform an etching process and a modification process in a vacuum-free environment, so that the patterning process can be performed in the same cavity.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1A至圖1E為本發明實施例之一種圖案化的方法的剖面示意圖。圖2是本發明第一實施例之圖案化的方法的流程圖。圖3是本發明第二實施例之圖案化的方法的流程圖。圖4是本發明第三實施例之圖案化的方法的流程圖。1A to 1E are schematic cross-sectional views showing a method of patterning according to an embodiment of the present invention. 2 is a flow chart of a method of patterning in accordance with a first embodiment of the present invention. 3 is a flow chart of a method of patterning in accordance with a second embodiment of the present invention. 4 is a flow chart of a method of patterning in accordance with a third embodiment of the present invention.
請參照圖1A與圖2，步驟102，在材料層10上形成圖案化的罩幕層12。材料層10可以是單一材料所構成，也可以是兩種以上的材料堆疊形成的堆疊結構。在一實施例中，材料層10可以是半導體晶圓。半導體晶圓例如是選自於Si、Ge、SiGe、GaP、GaAs、SiC、SiGeC、InAs與InP所組成的族群中的至少一種半導體材料形成。在又一實施例中，材料層10也可以是絕緣層上覆矽（SOI）基底。在另一實施例中，材料層10為氧化矽層與多晶矽層形成之堆疊層。圖案化的罩幕層12例如是圖案化的光阻層。圖案化的罩幕層12具有多個開口13，開口13裸露出材料層10。Referring to FIG. 1A and FIG. 2, step 102, a patterned mask layer 12 is formed on the material layer 10. The material layer 10 may be composed of a single material, or may be a stacked structure in which two or more materials are stacked. In an embodiment, the material layer 10 can be a semiconductor wafer. The semiconductor wafer is formed, for example, of at least one semiconductor material selected from the group consisting of Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP. In yet another embodiment, the material layer 10 can also be an insulating layer overlying cerium (SOI) substrate. In another embodiment, the material layer 10 is a stacked layer of a ruthenium oxide layer and a polysilicon layer. The patterned mask layer 12 is, for example, a patterned photoresist layer. The patterned mask layer 12 has a plurality of openings 13 that expose the material layer 10.
請參照圖1B與圖2，步驟104，以圖案化的罩幕層12為罩幕，進行蝕刻製程，以移除開口13裸露的材料層10的一部分，以形成凹陷14。凹陷14的側壁可以是與材料層10的法線呈水平的垂直側壁，或是與材料層10的法線夾一銳角的傾斜側壁。此蝕刻製程可以是非等向性蝕刻製程，例如是乾式蝕刻製程。乾式蝕刻製程例如是電漿蝕刻製程。在一實施例中，材料層10為矽層或矽基底，乾式蝕刻製程所使用的反應氣體例如是Cl2 或Cl2 與CF4 ，射頻（Radio Frequency, RF）功率例如是13.56MHz至2.45GHz。Referring to FIG. 1B and FIG. 2, step 104, using the patterned mask layer 12 as a mask, an etching process is performed to remove a portion of the exposed material layer 10 of the opening 13 to form the recess 14. The sidewall of the recess 14 may be a vertical sidewall that is horizontal to the normal to the layer of material 10, or an oblique sidewall that is at an acute angle to the normal to the layer of material 10. The etching process can be an anisotropic etch process, such as a dry etch process. The dry etching process is, for example, a plasma etching process. In one embodiment, the material layer 10 is a germanium layer or a germanium substrate, and the reactive gas used in the dry etching process is, for example, Cl 2 or Cl 2 and CF 4 , and the radio frequency (RF) power is, for example, 13.56 MHz to 2.45 GHz. .
接著，請參照圖1C與圖2，步驟106，進行前處理製程15，以對開口13裸露的材料層11改質，進而在凹陷14下方與側壁的材料層10中形成改質區16。更具體地說，前處理製程15可以破壞凹陷14下方與側壁的材料層10的結構（例如是晶格）。在一實施例中，前處理製程15包括離子植入製程。離子植入製程不僅可以破壞凹陷14下方與側壁的材料層10的晶格，並且可使圖案化的罩幕層12產生交聯而硬化成較硬的圖案化的罩幕層12a。圖案化罩幕層12a的硬度增加，可以增加其與下方的材料層10之間的蝕刻選擇比。離子植入製程使用Ar、N2 、P或其組合做為離子源。離子植入製程的能量例如為5keV至60keV。離子植入製程的離子植入方向與材料層10的法線方向的夾角（又稱傾斜角）例如為0度至7度。離子植入的劑量例如為1´1015 至 5´1016 ion/cm2 。Next, referring to FIG. 1C and FIG. 2, step 106, a pre-processing process 15 is performed to modify the material layer 11 exposed by the opening 13 to form a modified region 16 in the material layer 10 below the recess 14 and the sidewall. More specifically, the pre-treatment process 15 can destroy the structure (e.g., lattice) of the material layer 10 below the recess 14 and the sidewalls. In an embodiment, the pre-treatment process 15 includes an ion implantation process. The ion implantation process not only destroys the crystal lattice of the material layer 10 below the recess 14 and the sidewalls, but also causes the patterned mask layer 12 to be crosslinked to harden into a harder patterned mask layer 12a. The hardness of the patterned mask layer 12a is increased to increase the etching selectivity ratio between it and the underlying material layer 10. The ion implantation process uses Ar, N 2 , P or a combination thereof as an ion source. The energy of the ion implantation process is, for example, 5 keV to 60 keV. The angle between the ion implantation direction of the ion implantation process and the normal direction of the material layer 10 (also referred to as the tilt angle) is, for example, 0 to 7 degrees. The dose of ion implantation is, for example, 1 ́10 15 to 5 ́10 16 ion/cm 2 .
接著，請參照圖1D與圖2，步驟108，進行蝕刻製程，以移除改質區16的材料層10，形成開口18。在一實施例中，此蝕刻製程可以僅移除改質區16的材料層10。在另一實施例中，此蝕刻製程除了移除改質區16的材料層10之外，還移除改質區16下方的材料層10。蝕刻製程可以是非等向性蝕刻製程，例如是乾式蝕刻製程。乾式蝕刻製程例如是電漿蝕刻製程、離子蝕刻或電子束蝕刻。在一實施例中，材料層10為矽層或矽基底，乾式蝕刻製程所使用的反應氣體例如是Cl2 或Cl2 與CF4 ，射頻功率例如是13.56MHz至2.45GHz。由於前處理製程15後，所形成的改質區16的材料層10的結構已遭破壞，因此，蝕刻製程可以輕易移除改質區16的材料層10。此外，由於前處理製程15後，圖案化的罩幕層12產生交聯，而形成具有足夠硬度的圖案化的罩幕層12a，其與下方的材料層10之間具有足夠的蝕刻選擇比，因此，在進行蝕刻製程時，可以減少圖案化的硬罩幕層12a的耗損。Next, referring to FIG. 1D and FIG. 2, step 108, an etching process is performed to remove the material layer 10 of the modified region 16 to form the opening 18. In an embodiment, this etching process may remove only the material layer 10 of the modified region 16. In another embodiment, this etching process removes the material layer 10 below the modified region 16 in addition to the material layer 10 of the modified region 16. The etching process can be an anisotropic etch process, such as a dry etch process. The dry etching process is, for example, a plasma etching process, ion etching, or electron beam etching. In one embodiment, the material layer 10 is a tantalum layer or a tantalum substrate, and the reactive gas used in the dry etching process is, for example, Cl 2 or Cl 2 and CF 4 , and the RF power is, for example, 13.56 MHz to 2.45 GHz. Since the structure of the material layer 10 of the reformed region 16 formed has been destroyed by the pretreatment process 15, the material layer 10 of the modified region 16 can be easily removed by the etching process. In addition, after the pre-treatment process 15, the patterned mask layer 12 is cross-linked, and a patterned mask layer 12a having sufficient hardness is formed, which has a sufficient etching selectivity ratio with the underlying material layer 10, Therefore, the loss of the patterned hard mask layer 12a can be reduced when the etching process is performed.
請參照圖1E與圖2，步驟120，如果所形成的開口18已經達到所需的深度，則可以停止蝕刻，並將圖案化的罩幕層12a移除。Referring to FIG. 1E and FIG. 2, step 120, if the formed opening 18 has reached the desired depth, the etching may be stopped and the patterned mask layer 12a removed.
請參照圖3與圖1E，步驟109，判斷開口18是否具有足夠的深度。如果所形成的開口18具有足夠的深度，則進行步驟120，將圖案化的罩幕層12a移除。如果所形成的開口18深度仍不足，則可以進行步驟110，繼續進行蝕刻製程，直到所形成的開口18達到所需的深度，再將圖案化的罩幕層12a移除（步驟120）。Referring to FIG. 3 and FIG. 1E, step 109, it is determined whether the opening 18 has sufficient depth. If the formed opening 18 has sufficient depth, then step 120 is performed to remove the patterned mask layer 12a. If the depth of the opening 18 is still insufficient, step 110 may be performed to continue the etching process until the formed opening 18 reaches the desired depth, and the patterned mask layer 12a is removed (step 120).
請參照圖4與圖1E，或者，可以依據實際的需要，在繼續進行蝕刻製程（步驟110）之後，進行步驟119，判斷開口18是否具有足夠的深度。如果所形成的開口18具有足夠的深度，則進行步驟120，將圖案化的罩幕層12a移除。如果所形成的開口18深度仍不足，則可以選擇重複進行上述的前處理製程15（步驟106）、蝕刻製程（步驟108）以及蝕刻製程（步驟110），直到在材料層10中的開口18具有所需深度。之後，再將圖案化的罩幕層12a移除（步驟120）。開口18可以是基底中的溝渠或接觸窗開口。Referring to FIG. 4 and FIG. 1E, or after continuing the etching process (step 110) according to actual needs, step 119 is performed to determine whether the opening 18 has sufficient depth. If the formed opening 18 has sufficient depth, then step 120 is performed to remove the patterned mask layer 12a. If the depth of the opening 18 formed is still insufficient, the pre-treatment process 15 (step 106), the etching process (step 108), and the etching process (step 110) described above may be repeatedly performed until the opening 18 in the material layer 10 has Depth required. Thereafter, the patterned mask layer 12a is removed (step 120). The opening 18 can be a trench or contact window opening in the substrate.
在以上實施例中，在進行前處理製程15之前，先進行蝕刻製程以移除部分材料層10，而形成凹陷14。然而，本發明並不以此為限。在其他實施例中，可以省略圖2~4中的步驟104。In the above embodiment, an etching process is performed to remove a portion of the material layer 10 to form the recesses 14 prior to performing the pre-treatment process 15. However, the invention is not limited thereto. In other embodiments, step 104 of Figures 2 through 4 may be omitted.
圖5A至圖5D為本發明另一實施例之一種圖案化的方法的剖面示意圖。圖5A至圖5D的製程與圖1A至圖1E相似，在此僅針對差異處詳細說明。5A-5D are schematic cross-sectional views showing a method of patterning according to another embodiment of the present invention. The process of Figures 5A through 5D is similar to that of Figures 1A through 1E, and is only described in detail herein with respect to differences.
請參照圖5B，此步驟與上述實施例圖1C所揭露者相似，但在進行前處理製程15之前，不進行蝕刻製程，材料層10中不會形成圖1B所示的凹陷14。前處理製程15是對圖案化的罩幕層12所裸露的平坦的材料層10進行。圖5C至圖5D的製程與圖1D至圖1E相似，於此不再贅述。Referring to FIG. 5B, this step is similar to that disclosed in FIG. 1C of the above embodiment, but the recess 14 shown in FIG. 1B is not formed in the material layer 10 without performing an etching process before the pre-processing process 15 is performed. The pre-treatment process 15 is performed on the flat material layer 10 exposed by the patterned mask layer 12. The process of FIG. 5C to FIG. 5D is similar to that of FIG. 1D to FIG. 1E, and details are not described herein again.
在上述的方法中，圖案化的方法中所述的蝕刻製程與前處理製程可以在不同的腔體中進行，也可以在不破真空的同一腔體中進行。以下舉一實施例來說明，然而本發明並不限於此。In the above method, the etching process and the pre-treatment process described in the patterning method may be performed in different cavities or in the same cavity without breaking the vacuum. The following is described by way of an embodiment, but the invention is not limited thereto.
圖6繪示本發明實施例之一種圖案化裝置的示意圖。FIG. 6 is a schematic diagram of a patterning device according to an embodiment of the invention.
請參照圖6，圖案化裝置600包括多室腔體602、蝕刻單元610、改質單元620以及輸送單元630。多室腔體602內為真空環境，其至少具有第一室604與第二室606。第一室604與第二室606均在真空環境，但真空的程度可以不同。Referring to FIG. 6 , the patterning device 600 includes a multi-chamber cavity 602 , an etching unit 610 , a modifying unit 620 , and a conveying unit 630 . The multi-chamber cavity 602 is a vacuum environment having at least a first chamber 604 and a second chamber 606. Both the first chamber 604 and the second chamber 606 are in a vacuum environment, but the degree of vacuum can vary.
蝕刻單元610位於第一室604中，其可用來蝕刻材料層。蝕刻單元610可以是電漿蝕刻機台、濕式蝕刻機台、離子束蝕刻機台或電子束蝕刻機台。Etch unit 610 is located in first chamber 604, which can be used to etch a layer of material. The etching unit 610 may be a plasma etching machine, a wet etching machine, an ion beam etching machine, or an electron beam etching machine.
圖7繪示一種電漿蝕刻機台的示意圖。FIG. 7 is a schematic view of a plasma etching machine.
請參照圖7，電漿蝕刻機台包括射頻電源701、直流電源702、電漿703、製程氣體注入口704、感應式耦合電漿源（ICP source）705、天線706、介電柱（dielectric cylinder）707、擴散腔體708、基底座（substrate holder）709、晶圓偏壓射頻710、真空系統（未繪示）以及溫度控制裝置（未繪示）。Referring to FIG. 7, the plasma etching machine includes a radio frequency power source 701, a DC power source 702, a plasma 703, a process gas injection port 704, an inductively coupled plasma source (ICP source) 705, an antenna 706, and a dielectric cylinder. 707, a diffusion cavity 708, a substrate holder 709, a wafer bias RF 710, a vacuum system (not shown), and a temperature control device (not shown).
改質單元620位於第二室606中，用以改質材料層，破壞材料層的結構性（例如是晶格）。改質單元620可以是離子植入機台或電子束機台。離子植入機台可以包括氣體系統、真空系統、控制系統和射束線系統（Beam line system）。The modifying unit 620 is located in the second chamber 606 for modifying the material layer to disrupt the structural properties of the material layer (eg, a crystal lattice). The modifying unit 620 can be an ion implantation machine or an electron beam machine. The ion implantation machine can include a gas system, a vacuum system, a control system, and a Beam line system.
圖8繪示本發明實施例之一種離子植入機台的示意圖。FIG. 8 is a schematic diagram of an ion implantation machine according to an embodiment of the invention.
請參照圖8，離子植入機台包括腔體（陽極）801、離子源802、元素源803、燈絲（陰極）804、磁場805a與805b、萃取電極806、質量解析器（mass analyzer）807、離子加速管808、透鏡系統809、電子掃瞄810、終端811以及氣體系統（未繪示）、真空系統（未繪示）以及控制系統（未繪示）等。Referring to FIG. 8, the ion implantation machine includes a cavity (anode) 801, an ion source 802, an element source 803, a filament (cathode) 804, magnetic fields 805a and 805b, an extraction electrode 806, a mass analyzer 807, The ion acceleration tube 808, the lens system 809, the electronic scan 810, the terminal 811, and a gas system (not shown), a vacuum system (not shown), and a control system (not shown).
輸送單元630位在第一室604與第二室606之間，例如是多室腔體602的中心區域608。輸送單元630用以在蝕刻單元610與改質單元620之間傳輸材料層（或晶圓）。輸送單元630可以是包括裝載與卸載晶圓的機器手臂等。The delivery unit 630 is located between the first chamber 604 and the second chamber 606, such as the central region 608 of the multi-chamber cavity 602. The transport unit 630 is configured to transport a material layer (or wafer) between the etching unit 610 and the modifying unit 620. The conveying unit 630 may be a robot arm including a loading and unloading wafer, or the like.
在以上的實施例中，是以單一個蝕刻單元以及單一個改質單元來說明，然而，本發明並不以此為限，圖案化裝置可以依據實際的需要，在多室腔體中的多個室中設置多個蝕刻單元以及多個改質單元。In the above embodiments, the single etching unit and the single modifying unit are illustrated. However, the present invention is not limited thereto, and the patterning device can be used in a multi-chamber cavity according to actual needs. A plurality of etching units and a plurality of modifying units are disposed in the plurality of chambers.
綜合以上所述，本發明利用前處理製程對材料層改質，藉由破壞材料層的結構而形成的改質區，可以在後續進行的蝕刻製程中輕易移除，非常適合用來形成高深寬比的開口，因此，可以避免高深寬比開口輪廓不易控制或是蝕刻殘留等問題。此外，本發明提供的圖案化裝置可以在不破真空的環境下，進行蝕刻製程與改質製程，使圖案化的製程可以在同一腔體中進行。In summary, the present invention utilizes a pre-treatment process to modify the material layer, and the modified region formed by destroying the structure of the material layer can be easily removed in a subsequent etching process, which is very suitable for forming high and deep widths. The ratio of the openings makes it possible to avoid problems such as difficulty in controlling the high aspect ratio opening profile or etching residue. In addition, the patterning device provided by the present invention can perform an etching process and a modification process in a vacuum-free environment, so that the patterning process can be performed in the same cavity.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
102、104、106、108、109、110、119、120‧‧‧步驟
10‧‧‧材料層
12、12a‧‧‧圖案化的罩幕層
13、18‧‧‧開口
14‧‧‧凹陷
15‧‧‧前處理製程
16‧‧‧改質區
600‧‧‧圖案化裝置
602‧‧‧多室腔體
604‧‧‧第一室
606‧‧‧第二室
610‧‧‧蝕刻單元
620‧‧‧改質單元
630‧‧‧輸送單元
701‧‧‧射頻電源
702‧‧‧直流電源
703‧‧‧電漿
704‧‧‧製程氣體注入口
705‧‧‧感應式耦合電漿源
706‧‧‧天線
707‧‧‧介電柱
708‧‧‧擴散腔體
709‧‧‧基底座
710‧‧‧晶圓偏壓射頻
801‧‧‧腔體
802‧‧‧離子源
803‧‧‧元素源
804‧‧‧燈絲
805a、805b‧‧‧磁場
806‧‧‧萃取電極
807‧‧‧質譜儀
808‧‧‧離子加速管
809‧‧‧透鏡系統
810‧‧‧電子掃瞄
811‧‧‧終端分析儀102, 104, 106, 108, 109, 110, 119, 120 ‧ ‧ steps
10‧‧‧Material layer
12, 12a‧‧‧ patterned mask layer
13, 18‧‧‧ openings
14‧‧‧ dent
15‧‧‧Pre-treatment process
16‧‧‧Modified area
600‧‧‧patterning device
602‧‧‧Multi-chamber cavity
604‧‧‧First Room
606‧‧‧ second room
610‧‧‧etching unit
620‧‧‧Modification unit
630‧‧‧Transportation unit
701‧‧‧RF power supply
702‧‧‧DC power supply
703‧‧‧ Plasma
704‧‧‧Process gas injection port
705‧‧‧Inductively coupled plasma source
706‧‧‧Antenna
707‧‧‧ dielectric column
708‧‧‧Diffuser cavity
709‧‧‧Base base
710‧‧‧Wafer bias RF
801‧‧‧ cavity
802‧‧‧ ion source
803‧‧‧ Element source
804‧‧‧ filament
805a, 805b‧‧‧ magnetic field
806‧‧‧Extraction electrode
807‧‧‧Mass Spectrometer
808‧‧‧Ion Acceleration Tube
809‧‧‧Lens system
810‧‧‧Electronic scanning
811‧‧‧Terminal Analyzer
圖1A~1E為本發明實施例之一種圖案化的方法的剖面示意圖。 圖2是本發明第一實施例之圖案化的方法的流程圖。 圖3是本發明第二實施例之圖案化的方法的流程圖。 圖4是本發明第三實施例之圖案化的方法的流程圖。 圖5A~5D為本發明另一實施例之圖案化的方法的剖面示意圖。 圖6繪示本發明實施例之一種圖案化裝置的示意圖。 圖7繪示先前技術之一種電漿蝕刻機台。 圖8繪示先前技術之一種離子植入機台。1A-1E are schematic cross-sectional views showing a method of patterning according to an embodiment of the present invention. 2 is a flow chart of a method of patterning in accordance with a first embodiment of the present invention. 3 is a flow chart of a method of patterning in accordance with a second embodiment of the present invention. 4 is a flow chart of a method of patterning in accordance with a third embodiment of the present invention. 5A-5D are schematic cross-sectional views showing a method of patterning according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a patterning device according to an embodiment of the invention. Figure 7 illustrates a plasma etching machine of the prior art. Figure 8 illustrates an ion implantation machine of the prior art.
102、104、106、108、120‧‧‧步驟 102, 104, 106, 108, 120‧‧‧ steps
Claims (10)
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