TW201544193A - Film formation apparatus - Google Patents

Film formation apparatus Download PDF

Info

Publication number
TW201544193A
TW201544193A TW104106797A TW104106797A TW201544193A TW 201544193 A TW201544193 A TW 201544193A TW 104106797 A TW104106797 A TW 104106797A TW 104106797 A TW104106797 A TW 104106797A TW 201544193 A TW201544193 A TW 201544193A
Authority
TW
Taiwan
Prior art keywords
gas
powder
film forming
forming apparatus
area
Prior art date
Application number
TW104106797A
Other languages
Chinese (zh)
Other versions
TWI603784B (en
Inventor
Satoshi Hirano
Koichi Kawasaki
Original Assignee
Nhk Spring Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nhk Spring Co Ltd filed Critical Nhk Spring Co Ltd
Publication of TW201544193A publication Critical patent/TW201544193A/en
Application granted granted Critical
Publication of TWI603784B publication Critical patent/TWI603784B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/14Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/02Coating starting from inorganic powder by application of pressure only
    • C23C24/04Impact or kinetic deposition of particles

Abstract

The present invention provides a film formation apparatus employing cold spray method, which is capable of uniformizing powder amount adhered on inner walls of passages to which the power pass through. The film formation device comprises a gas powder mixing part 10 for mixing a gas and a powder and supplying them to a nozzle 5, a gas chamber 11 connected to the gas powder mixing part 10 via at least one gas passing opening 13a and introducing the gas into the gas powder mixing part 10, a powder supplying tube 12 for supplying the powder to the gas powder mixing part 10, which penetrates the gas chamber 11 and is disposed such ethat an injection opening 12a protrudes in the gas powder mixing part 10 and toward a front direction of the nozzle 5, and a commutating part 14 provided around the powder supplying tube 12 within the gas chamber 11, for commutating the gas introduced to the gas chamber 11 and allows it to pass the gas passing opening 13a.

Description

成膜裝置 Film forming device

本發明係關於一種利用冷噴塗(cold spray)法的成膜裝置。 The present invention relates to a film forming apparatus using a cold spray method.

近年來,金屬覆膜的形成方法已知有冷噴塗法(例如參照專利文獻1)。冷噴塗法係藉由將材料的粉末與於熔點或軟化點以下的狀態的惰性氣體一起從噴嘴噴射,且直接以固相狀態撞擊至基材,而在基材的表面形成覆膜之方法。於冷噴塗法中,由於在與溶射法相比之下較低的溫度進行加工,因此可得到無相變態且氧化亦受到抑制的金屬覆膜。而且,也可緩和熱應力的影響。進一步而言,作為基材及覆膜的材料均為金屬時,金屬材料的粉末與基材(或先形成的覆膜)撞擊之際會在粉末與基材之間產生塑性變形而得到錨定效果,並且彼此的氧化覆膜會被破壞而於新生面彼此間產生金屬鍵結,故可得到密著強度高的積層體。 In recent years, a cold spray method is known as a method of forming a metal film (see, for example, Patent Document 1). The cold spray method is a method of forming a film on the surface of a substrate by spraying a powder of the material from a nozzle together with an inert gas in a state below the melting point or the softening point, and directly impinging on the substrate in a solid phase state. In the cold spray method, since the processing is performed at a lower temperature than the sputtering method, a metal film having no phase change state and oxidation is also suppressed. Moreover, the influence of thermal stress can also be alleviated. Further, when the material of the substrate and the film is a metal, when the powder of the metal material collides with the substrate (or the film formed first), plastic deformation occurs between the powder and the substrate to obtain an anchoring effect. Further, since the oxide film of each other is broken and metal bonds are formed between the new faces, a laminate having high adhesion strength can be obtained.

於如此之利用冷噴塗法的成膜裝置中,一般而言,於噴嘴的上游設有氣體粉末混合部,並將分別從別的系統供給之粉末以及高壓氣體導入至此氣體粉末混合 部並予以混合。於是,藉由高壓氣體的氣體壓使粉末從氣體粉末混合部送至噴嘴,而從噴嘴的前端噴射。 In the film forming apparatus using the cold spray method as described above, generally, a gas powder mixing portion is provided upstream of the nozzle, and powders and high pressure gases respectively supplied from other systems are introduced into the gas powder mixture. And mix them. Then, the powder is sent from the gas powder mixing portion to the nozzle by the gas pressure of the high pressure gas, and is ejected from the tip end of the nozzle.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本特開2008-302311號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-302311

然而,於上述一般的成膜裝置中,會有粉末在通過氣體粉末混合部時,粉末偏向於通路的內壁而附著的問題。因此,在內壁的特定部分會堆積粉末,而必須中斷成膜,將氣體粉末混合部及噴嘴自成膜裝置本體取出,且頻繁地清理粉末通路。 However, in the above-described general film forming apparatus, there is a problem in that the powder adheres to the inner wall of the passage when the powder passes through the gas powder mixing portion. Therefore, powder is deposited in a specific portion of the inner wall, and film formation must be interrupted, the gas powder mixing portion and the nozzle are taken out from the film forming apparatus body, and the powder passage is frequently cleaned.

本發明係鑑於上述情事而研創者,其目的在於提供一種可於利用冷噴塗法之成膜裝置中,使附著於粉末通過之通路的內壁之粉末量均勻化之成膜裝置。 The present invention has been made in view of the above circumstances, and an object of the invention is to provide a film forming apparatus which can uniformize the amount of powder adhering to the inner wall of a passage through which a powder passes through a film forming apparatus using a cold spray method.

為了解決上述課題並達成目的,本發明之成膜裝置係將材料的粉末與氣體一同從噴嘴噴射,使前述粉末直接以固相狀態噴附並堆積於基材的表面,藉此形成覆膜的成膜裝置,其係具備:氣體粉末混合部,係將前述氣體與前述粉末予以混合並供給至前述噴嘴;氣體室,係透過至少1個氣體通過口與前述氣體粉末混合部連通,將前述氣體導入至前述氣體粉末混合部;粉末供給管,係將 前述粉末供給至前述氣體粉末混合部,且係貫通前述氣體室,使前述粉末的射出口突出於前述氣體粉末混合部並且朝向噴嘴的前端方向配置;以及整流部,係設於前述氣體室內之前述粉末供給管之周圍,對導入至前述氣體室之前述氣體予以整流,使之通過前述至少1個氣體通過口。 In order to solve the above problems and achieve the object, the film forming apparatus of the present invention sprays a powder of a material together with a gas from a nozzle, and directly deposits the powder in a solid phase state and deposits it on the surface of the substrate, thereby forming a film. The film forming apparatus includes: a gas powder mixing unit that mixes the gas with the powder and supplies the gas to the nozzle; and the gas chamber communicates with the gas powder mixing unit through at least one gas passage port to pass the gas Introduced to the gas powder mixing section; the powder supply pipe The powder is supplied to the gas powder mixing portion, and penetrates into the gas chamber, and the injection port of the powder protrudes from the gas powder mixing portion and is disposed toward the tip end of the nozzle; and the rectifying portion is disposed in the gas chamber Around the powder supply pipe, the gas introduced into the gas chamber is rectified and passed through the at least one gas passage port.

於上述成膜裝置中,前述整流部具有兩端形成開口之呈管狀的構件,並配置成使該構件之一邊的開口面觸抵前述至少1個氣體通過口,使另一邊的開口面相對向前述氣體室之內壁。 In the above film forming apparatus, the rectifying portion has a tubular member having an opening at both ends, and is disposed such that an opening surface of one of the members abuts against the at least one gas passage opening, and the other opening surface faces the opposite side The inner wall of the aforementioned gas chamber.

於上述成膜裝置中,將前述另一邊的開口面中之供導入至前述氣體室之前述氣體流入之區域的面積設為面積A,將從與前述另一邊的開口面相對向之前述內壁至前述另一邊的開口面為止之距離設為高度,將以前述區域為底面之柱形狀之側面之面積設為面積B時,前述面積B係為前述面積A以上。 In the film forming apparatus, an area of the opening surface of the other side that is introduced into the gas chamber into the region where the gas flows in is an area A, and the inner wall is opposed to the opening surface of the other side. The distance to the opening surface of the other side is set to a height, and when the area of the side surface of the columnar shape in which the area is the bottom surface is the area B, the area B is equal to or larger than the area A.

於上述成膜裝置中,前述面積B係為前述面積A之8倍以下。 In the above film forming apparatus, the area B is 8 times or less of the area A.

於上述成膜裝置中,前述整流部係更具有設於前述形成為管狀的構件之內壁面之複數個整流構件。 In the film forming apparatus described above, the rectifying portion further includes a plurality of rectifying members provided on an inner wall surface of the tubular member.

於上述成膜裝置中,前述整流部之開口面係形成為與前述氣體粉末混合部之與長度方向正交的剖面相似的形狀。 In the film forming apparatus described above, the opening surface of the rectifying portion is formed into a shape similar to a cross section orthogonal to the longitudinal direction of the gas powder mixing portion.

於上述成膜裝置中,前述整流部之開口面係形成為與前述氣體粉末混合部之與長度方向正交的剖面 相同的形狀。 In the above film forming apparatus, the opening surface of the rectifying portion is formed to have a cross section orthogonal to the longitudinal direction of the gas powder mixing portion. The same shape.

於上述成膜裝置中,前述整流部之開口面係形成為圓形形狀、橢圓形形狀、矩形形狀、或多邊形形狀。 In the film forming apparatus described above, the opening surface of the rectifying portion is formed into a circular shape, an elliptical shape, a rectangular shape, or a polygonal shape.

根據本發明,於氣體室內的粉末供給管的周圍設有將導入至氣體室之氣體予以整流而使其通過氣體通過口之整流部,故可使附著在有粉末通過的通路之氣體粉末混合部之內壁粉末均勻化。結果,可使清理粉末通路的頻率減低,且有效率地進行成膜。 According to the present invention, a gas powder mixing portion that allows the gas introduced into the gas chamber to be rectified and passed through the gas passage opening is provided around the powder supply pipe in the gas chamber. The inner wall powder is homogenized. As a result, the frequency of cleaning the powder passage can be reduced, and film formation can be performed efficiently.

1‧‧‧成膜裝置 1‧‧‧ film forming device

2‧‧‧氣體加熱器 2‧‧‧ gas heater

3‧‧‧粉末供給裝置 3‧‧‧Powder supply device

4‧‧‧噴塗槍 4‧‧‧ spray gun

5‧‧‧噴嘴 5‧‧‧ nozzle

6、7‧‧‧閥 6, 7‧‧‧ valve

10‧‧‧氣體粉末混合部 10‧‧‧Gas Powder Mixing Department

11‧‧‧氣體室 11‧‧‧ gas chamber

12‧‧‧粉末供給管 12‧‧‧Powder supply tube

12a‧‧‧射出口 12a‧‧‧shots

13、30‧‧‧粉末供給管支持部 13, 30‧‧‧Powder Supply Pipe Support Department

13a、30a‧‧‧氣體通過口 13a, 30a‧‧‧ gas passage

13b‧‧‧開口 13b‧‧‧ openings

14、40‧‧‧整流部 14, 40‧‧ ‧ Rectifier

14a‧‧‧開口面 14a‧‧‧Open face

15‧‧‧溫度感測器 15‧‧‧Temperature Sensor

16‧‧‧壓力感測器 16‧‧‧ Pressure Sensor

17‧‧‧氣體供給路 17‧‧‧ gas supply road

20‧‧‧柱狀區域 20‧‧‧ Columnar area

31‧‧‧外周環 31‧‧‧ peripheral ring

32‧‧‧支持棒 32‧‧‧Support rod

41‧‧‧筒部 41‧‧‧ Tube

42‧‧‧整流鰭片 42‧‧‧Rectifying fins

100‧‧‧基材 100‧‧‧Substrate

101‧‧‧覆膜 101‧‧‧ film

111、121、122‧‧‧區域 111, 121, 122‧‧‧ areas

第1圖係表示本發明之實施形態的成膜裝置之構成之示意圖。 Fig. 1 is a schematic view showing the configuration of a film forming apparatus according to an embodiment of the present invention.

第2圖係放大表示第1圖所示噴塗槍的內部之剖面圖。 Fig. 2 is an enlarged cross-sectional view showing the inside of the coating gun shown in Fig. 1.

第3圖係放大表示第2圖所示粉末供給管支持部之平面圖。 Fig. 3 is an enlarged plan view showing the support portion of the powder supply pipe shown in Fig. 2.

第4圖係第2圖所示之整流部之X箭頭視圖。 Fig. 4 is an X-ray view of the rectifying portion shown in Fig. 2.

第5圖係放大表示第2圖所示之整流部之開口面附近之立體圖。 Fig. 5 is an enlarged perspective view showing the vicinity of the opening surface of the flow regulating portion shown in Fig. 2;

第6圖係表示第2圖所示之粉末供給管支持部之變形例之平面圖。 Fig. 6 is a plan view showing a modification of the powder supply tube support portion shown in Fig. 2.

第7圖係表示第2圖所示之整流部之變形例之立體圖。 Fig. 7 is a perspective view showing a modified example of the rectifying portion shown in Fig. 2.

第8圖係表示將第7圖所示之整流部安裝於噴塗槍之 狀態之剖面圖。 Figure 8 is a view showing that the rectifying portion shown in Fig. 7 is attached to a spray gun. A sectional view of the state.

第9圖係表示實施例2之實驗後之氣體粉末混合部之照片。 Fig. 9 is a photograph showing a gas powder mixing portion after the experiment of Example 2.

第10圖係表示比較例2之實驗後之氣體粉末混合部之照片。 Fig. 10 is a photograph showing a gas powder mixing portion after the experiment of Comparative Example 2.

以下,將一邊參照圖式一邊詳細說明本實施形態。另外,本發明並不受限於下列的實施形態。而且,於下列的說明所參照之各圖僅係概略地表示可理解本發明之內容的程度之形狀、大小、以及位置關係。亦即,本發明不僅限於各圖所例示之形狀、大小、以及位置關係。 Hereinafter, the present embodiment will be described in detail with reference to the drawings. Further, the present invention is not limited to the following embodiments. Moreover, the drawings referred to in the following description merely schematically illustrate the shape, size, and positional relationship of the extent to which the present invention can be understood. That is, the present invention is not limited to the shapes, sizes, and positional relationships illustrated in the respective drawings.

(實施形態) (embodiment)

第1圖表示係本發明之實施形態的成膜裝置之構成之示意圖。如第1圖所示,本實施形態之成膜裝置1係利用冷噴塗法之成膜裝置,且具備加熱高壓氣體(壓縮氣體)之氣體加熱器2、收容成膜材料之粉末並供給至噴塗槍4之粉末供給裝置3、混合經加熱之高壓氣體與粉末並導入至噴嘴5之噴塗槍4、將粉末與高壓氣體一起噴射之噴嘴5、以及分別調節對氣體加熱器2以及粉末供給裝置3之高壓氣體之供給量的閥6及7。 Fig. 1 is a schematic view showing the configuration of a film forming apparatus according to an embodiment of the present invention. As shown in Fig. 1, the film forming apparatus 1 of the present embodiment is a film forming apparatus using a cold spray method, and includes a gas heater 2 for heating a high-pressure gas (compressed gas), and a powder containing a film forming material, and is supplied to the spray coating. The powder supply device 3 of the gun 4, the spray gun 4 that mixes the heated high-pressure gas and powder and is introduced into the nozzle 5, the nozzle 5 that sprays the powder together with the high-pressure gas, and the gas heater 2 and the powder supply device 3 are separately adjusted. Valves 6 and 7 for the supply of high pressure gas.

高壓氣體係使用氦、氮、空氣等。供給至氣體加熱器2之高壓氣體係在加熱至比材料粉末的熔點低的範圍的溫度後導入至噴塗槍4。高壓氣體的加熱溫度較佳為300至900℃。 The high pressure gas system uses helium, nitrogen, air, and the like. The high-pressure gas system supplied to the gas heater 2 is introduced to the coating gun 4 after being heated to a temperature lower than the melting point of the material powder. The heating temperature of the high pressure gas is preferably from 300 to 900 °C.

另一方面,供給至粉末供給裝置3之高壓氣體係以使粉末供給裝置3內的粉末成為指定的吐出量的方式供給至噴塗槍4。 On the other hand, the high-pressure gas system supplied to the powder supply device 3 is supplied to the coating gun 4 so that the powder in the powder supply device 3 becomes a predetermined discharge amount.

經加熱之高壓氣體係通過噴嘴5而成為超音速流(約340m/s以上)並噴射。此時的高壓氣體的氣體壓力較佳為1至5MPa左右。這是因為藉由將高壓氣體的壓力調整為此程度,而謀求覆膜101對基材100的密著強度之提升。更佳為以2至4MPa左右的壓力。 The heated high-pressure gas system passes through the nozzle 5 to become a supersonic flow (about 340 m/s or more) and is ejected. The gas pressure of the high pressure gas at this time is preferably about 1 to 5 MPa. This is because the pressure of the high pressure gas is adjusted to such an extent that the adhesion strength of the film 101 to the substrate 100 is improved. More preferably, it is a pressure of about 2 to 4 MPa.

於如此之成膜裝置1中,係將基材100朝噴塗槍4配置,並將成膜材料的粉末投入至粉末供給裝置3,開始將高壓氣體供給至氣體加熱器2以及粉末供給裝置3。從而,供給至噴塗槍4之粉末被投入至此高壓氣體的超音速流中並加速,而從噴嘴5噴射。此粉末直接以固相狀態對基材100高速地撞擊並堆積,從而形成覆膜101。 In the film forming apparatus 1 as described above, the substrate 100 is placed on the coating gun 4, and the powder of the film forming material is introduced into the powder supply device 3, and the high pressure gas is supplied to the gas heater 2 and the powder supply device 3. Thereby, the powder supplied to the coating gun 4 is charged into the supersonic flow of the high-pressure gas and accelerated, and is ejected from the nozzle 5. This powder directly collides and accumulates the substrate 100 at a high speed in a solid phase state, thereby forming a film 101.

第2圖係放大表示第1圖所示之噴塗槍4內部之剖面圖。如第2圖所示,噴塗槍4具備有將高壓氣體與粉末予以混合並供給至噴嘴5之氣體粉末混合部10、填充有導入至氣體粉末混合部10之高壓氣體之氣體室11、將粉末供給至氣體粉末混合部10之粉末供給管12、設於氣體粉末混合部10與氣體室11之交界之粉末供給管支持部13、設於氣體室11內的粉末供給管12周圍之管狀之整流部14、以及設於氣體室11內之溫度感測器15及壓力感測器16。於粉末供給管支持部13中設有連通氣體粉末混合部10與氣體室11之至少1個氣體通過口13a。 Fig. 2 is an enlarged cross-sectional view showing the inside of the coating gun 4 shown in Fig. 1. As shown in Fig. 2, the spray gun 4 is provided with a gas powder mixing unit 10 that mixes a high-pressure gas and a powder and supplies it to the nozzle 5, and a gas chamber 11 filled with a high-pressure gas introduced into the gas powder mixing unit 10, and a powder. The powder supply tube 12 supplied to the gas powder mixing unit 10, the powder supply tube support portion 13 provided at the boundary between the gas powder mixing unit 10 and the gas chamber 11, and the tubular rectification around the powder supply tube 12 provided in the gas chamber 11. The portion 14 and the temperature sensor 15 and the pressure sensor 16 are disposed in the gas chamber 11. At least one gas passage opening 13a that connects the gas powder mixing unit 10 and the gas chamber 11 is provided in the powder supply tube support portion 13.

氣體粉末混合部10之噴嘴5之與長度方向正交的剖面(以下稱為橫剖面)係形成圓形形狀、橢圓形形狀、矩形形狀、多邊形形狀等旋轉對稱形狀的管狀,於本實施形態中為圓形形狀。而且,氣體粉末混合部10一邊的端部區域係朝噴嘴5慢慢變細。在氣體粉末混合部10中,從粉末供給管12同時供給氣體與粉末,並且透過氣體通過口13a從氣體室11導入氣體,並將兩者予以混合。與氣體混合後的粉末係藉由通過噴嘴5側的前端較細的區域而被加速送至噴嘴5。 The cross section perpendicular to the longitudinal direction of the nozzle 5 of the gas powder mixing unit 10 (hereinafter referred to as a cross section) is formed into a tubular shape having a rotationally symmetrical shape such as a circular shape, an elliptical shape, a rectangular shape, or a polygonal shape, and is in the present embodiment. It is a circular shape. Further, the end region of the gas powder mixing portion 10 is gradually tapered toward the nozzle 5. In the gas powder mixing section 10, gas and powder are simultaneously supplied from the powder supply pipe 12, and gas is introduced from the gas chamber 11 through the gas passage port 13a, and the two are mixed. The powder mixed with the gas is accelerated to be sent to the nozzle 5 by passing through a region where the tip end of the nozzle 5 is thin.

在氣體室11中,從氣體加熱器2透過氣體供給路17導入經加熱之高壓氣體。氣體室11內的壓力通常係維持在1至5MPa左右。藉由此氣體室11內與氣體粉末混合部10內的壓力差,將高壓氣體導入至氣體粉末混合部10。 In the gas chamber 11, the heated high-pressure gas is introduced from the gas heater 2 through the gas supply path 17. The pressure in the gas chamber 11 is usually maintained at about 1 to 5 MPa. The high-pressure gas is introduced into the gas-powder mixing section 10 by the pressure difference in the gas chamber 11 and the gas-powder mixing section 10.

粉末供給管12係貫通氣體室11,使粉末的射出口12a朝氣體粉末混合部10內突出,並且將該射出口12a朝向噴嘴5側配置。 The powder supply pipe 12 passes through the gas chamber 11, and the injection port 12a of the powder protrudes into the gas powder mixing portion 10, and the injection port 12a is disposed toward the nozzle 5 side.

第3圖係放大表示粉末供給管支持部13之平面圖。如第3圖所示,在粉末供給管支持部13之中央設有可嵌合粉末供給管12的開口13b,在該開口13b的外周側設有至少1個(於本實施形態為8個)氣體通過口13a。如此之粉末供給管支持部13係被嵌入在氣體粉末混合部10與氣體室11之交界。於是,藉由於粉末供給管支持部13之開口13b嵌合粉末供給管12,該粉末供給管12即沿著 氣體粉末混合部10以及噴嘴5之旋轉中心軸支持。 Fig. 3 is an enlarged plan view showing the powder supply tube support portion 13. As shown in Fig. 3, an opening 13b into which the powder supply tube 12 can be fitted is provided in the center of the powder supply tube support portion 13, and at least one outer peripheral side of the opening 13b is provided (eight in the present embodiment). The gas passes through the port 13a. The powder supply tube support portion 13 is embedded in the boundary between the gas powder mixing portion 10 and the gas chamber 11. Then, by fitting the powder supply pipe 12 to the opening 13b of the powder supply pipe support portion 13, the powder supply pipe 12 is along The gas powder mixing portion 10 and the rotation center axis of the nozzle 5 are supported.

整流部14係兩端有開口的管狀構件,於粉末供給管12的周圍中,配置為使一邊的開口面觸抵於氣體通過口13a,使另一邊的開口面(開口面14a)相對向於氣體室11之內壁。從氣體加熱器2導入至氣體室11之高壓氣體係從開口面14a流入至整流部14內並予以整流,且通過氣體通過口13a導入至氣體粉末混合部10。 The flow regulating portion 14 is a tubular member having an opening at both ends, and is disposed around the powder supply pipe 12 such that one open surface touches the gas passage opening 13a, and the other open surface (open surface 14a) faces each other. The inner wall of the gas chamber 11. The high-pressure gas system introduced into the gas chamber 11 from the gas heater 2 flows into the rectifying unit 14 from the opening surface 14a and is rectified, and is introduced into the gas powder mixing unit 10 through the gas passage opening 13a.

第4圖係第2圖所示之整流部14之X箭頭視圖。整流部14之開口面14a係配合氣體粉末混合部10之橫剖面形狀而形成為圓形形狀、橢圓形形狀、矩形形狀、多邊形形狀等旋轉對稱形狀。亦即,整流部14之開口面14a係形成為與氣體粉末混合部10之橫剖面形狀相似或相同之形狀。如第1圖及第4圖所示,於實施形態1中,將開口面14a形成為與氣體粉末混合部10同一直徑之圓形形狀。 Fig. 4 is an X-ray view of the rectifying portion 14 shown in Fig. 2. The opening surface 14a of the flow regulating portion 14 is formed into a circular symmetrical shape such as a circular shape, an elliptical shape, a rectangular shape, or a polygonal shape, in accordance with the cross-sectional shape of the gas-powder mixing portion 10. That is, the opening surface 14a of the rectifying portion 14 is formed into a shape similar to or the same as the cross-sectional shape of the gas-powder mixing portion 10. As shown in FIG. 1 and FIG. 4, in the first embodiment, the opening surface 14a is formed in a circular shape having the same diameter as the gas powder mixing portion 10.

如此之整流部14亦可與粉末供給管支持部13一體地形成。而且,於本實施形態中,整流部14雖然為直徑在長度方向均一的柱狀,但亦可為圓錐狀。 Such a rectifying portion 14 may be formed integrally with the powder supply tube support portion 13. Further, in the present embodiment, the rectifying portion 14 has a columnar shape in which the diameter is uniform in the longitudinal direction, but may be a conical shape.

其次,針對整流部14詳細說明。如上所述,導入至氣體室11之高壓氣體係從開口面14a流入至整流部14,在通過整流部14內之期間受到整流。藉由將此經整流之高壓氣體導入氣體粉末混合部10,從粉末供給管12供給至氣體粉末混合部10之粉末即沿著氣體粉末混合部10之長度方向行進,並供給至噴嘴5。此時,行進中之粉末 變得難以附著至氣體粉末混合部10之內壁,而且,即便附著有粉末,亦會於內壁均勻地附著,故粉末不會局部地堆積。 Next, the rectification unit 14 will be described in detail. As described above, the high-pressure gas system introduced into the gas chamber 11 flows into the rectifying unit 14 from the opening surface 14a, and is rectified while passing through the rectifying unit 14. By introducing the rectified high-pressure gas into the gas powder mixing unit 10, the powder supplied from the powder supply tube 12 to the gas powder mixing unit 10 travels along the longitudinal direction of the gas powder mixing unit 10 and is supplied to the nozzle 5. At this point, the powder in progress It becomes difficult to adhere to the inner wall of the gas-powder mixing section 10, and even if the powder adheres, it adheres uniformly to the inner wall, so that the powder does not locally deposit.

反之,未設有整流部14,或者是整流部14的尺寸不適當時,亦即,導入至氣體粉末混合部10之高壓氣體未經充分整流時,從粉末供給管12供給之粉末的行進方向會有所偏移。因此,粉末會於氣體粉末混合部10之內壁不均勻地附著,而造成局部堆積。 On the other hand, if the rectifying portion 14 is not provided, or the size of the rectifying portion 14 is not appropriate, that is, when the high-pressure gas introduced into the gas-powder mixing portion 10 is not sufficiently rectified, the traveling direction of the powder supplied from the powder supply pipe 12 will be There is some offset. Therefore, the powder may be unevenly adhered to the inner wall of the gas powder mixing portion 10, causing local accumulation.

在此,本案的發明人們係反覆進行從成膜裝置1噴射粉末的實驗,積極研究可充分地將導入至氣體粉末混合部10之高壓氣體整流成可使附著於該氣體粉末混合部10之內壁之粉末均勻化之程度的整流部14之尺寸條件。 Here, the inventors of the present invention repeatedly perform the experiment of ejecting the powder from the film forming apparatus 1, and actively study that the high-pressure gas introduced into the gas powder mixing section 10 can be sufficiently rectified so as to be attached to the gas powder mixing section 10. The dimensional condition of the rectifying portion 14 to the extent that the powder of the wall is uniformized.

如第2圖所示,將整流部14之沿著長度方向之氣體室11之寬度設為L1,將整流部14之長度方向之長度設為L2時,從開口面14a至與該開口面14a相對向之氣體室11之內壁為止之距離為L3(L3=L1-L2)。而且,將整流部14之內徑設為,將粉末供給管12之外徑設為As shown in Fig. 2, when the width of the gas chamber 11 along the longitudinal direction of the rectifying portion 14 is L 1 and the length of the rectifying portion 14 in the longitudinal direction is L 2 , the opening surface 14a is opened to the opening. The distance from the surface 14a to the inner wall of the gas chamber 11 is L 3 (L 3 = L 1 - L 2 ). Moreover, the inner diameter of the rectifying portion 14 is set to , setting the outer diameter of the powder supply tube 12 to .

第5圖係放大表示整流部14之開口面14a附近之斜視圖。於氣體室11內設有整流部14時,於該整流部14中,高壓氣體係從將開口面14a設為底面且將自從開口面14a至氣體室11之內壁為止之距離L3設為高度之柱狀區域20流入。此柱狀區域20中,從該柱狀區域20之 側面流入高壓氣體,從開口面14a流出高壓氣體。在此,將開口面14a之面積設為A,將柱狀區域20之側面之面積設為B時,面積A及B係可藉由下式(1)及(2)來表示。 Fig. 5 is an enlarged perspective view showing the vicinity of the opening surface 14a of the flow regulating portion 14. When the rectifying unit 14 is provided in the gas chamber 11, the high-pressure gas system has a distance L 3 from the opening surface 14a to the inner wall of the gas chamber 11 in the high-pressure gas system. The columnar region 20 of height flows in. In the columnar region 20, high-pressure gas flows from the side surface of the columnar region 20, and high-pressure gas flows out from the opening surface 14a. Here, when the area of the opening surface 14a is A and the area of the side surface of the columnar region 20 is B, the areas A and B can be expressed by the following formulas (1) and (2).

本案的發明人們在改變上述面積A及B之關係而進行實驗時,思及若滿足下式(3)時,可充分地對導入至氣體粉末混合部10之高壓氣體予以整流。 When the inventors of the present invention conducted an experiment to change the relationship between the areas A and B, it is considered that when the following formula (3) is satisfied, the high-pressure gas introduced into the gas powder mixing unit 10 can be sufficiently rectified.

1≦(B/A)≦8…(3) 1≦(B/A)≦8...(3)

如以上說明,依據本實施形態,藉由以滿足式(3)之方式規定整流部14之長度,即可於氣體粉末混合部10中防止從粉末供給管12供給之粉末偏向於內壁而附著,且局部地堆積。而且,可減低附著於氣體粉末混合部10之內壁之粉末本身。結果,可使清理氣體粉末混合部10之頻率減低,經過長時間有效率地進行成膜。 As described above, according to the present embodiment, by adjusting the length of the rectifying unit 14 so as to satisfy the formula (3), it is possible to prevent the powder supplied from the powder supply tube 12 from being biased toward the inner wall and adhering to the gas powder mixing unit 10. And partially piled up. Moreover, the powder itself adhering to the inner wall of the gas powder mixing portion 10 can be reduced. As a result, the frequency of cleaning the gas powder mixing portion 10 can be reduced, and film formation can be efficiently performed over a long period of time.

(變形例1) (Modification 1)

接著,針對本實施形態之變形例1進行說明。於上述實施形態中,雖然係藉由於粉末供給管支持部13形成複數個開口而設置氣體通過口13a(參照第3圖),但氣體通過口13a之數目與形狀並不限於此。例如,可適用第6圖所示之粉末供給管支持部30來取代粉末供給管支持部13。 Next, a first modification of the embodiment will be described. In the above-described embodiment, the gas passage opening 13a is provided by the powder supply pipe support portion 13 (see FIG. 3). However, the number and shape of the gas passage openings 13a are not limited thereto. For example, the powder supply tube support portion 30 shown in Fig. 6 can be applied instead of the powder supply tube support portion 13.

如第6圖所示,粉末供給管支持部30係具備:可嵌合於氣體粉末混合部10與氣體室11之交界之外周環31;以及抵接於粉末供給管12之外周側面並將該粉 末供給管12予以支持之複數個(在第6圖中為4個)支持棒32。此時,與第3圖所示之氣體通過口13a相比較,可增大氣體通過口30a之面積。另外,支持棒32之個數只要是可支持粉末供給管12者,則無特別限定,只要最低限度有1個即可。此時,可將氣體通過口30a一體化。 As shown in Fig. 6, the powder supply tube support portion 30 is provided with a peripheral ring 31 that can be fitted to the boundary between the gas powder mixing portion 10 and the gas chamber 11, and abuts against the outer peripheral side of the powder supply tube 12 and powder A plurality of (four in FIG. 6) support bars 32 are supported by the end supply pipe 12. At this time, the area of the gas passage opening 30a can be increased as compared with the gas passage opening 13a shown in Fig. 3. In addition, the number of the support bars 32 is not particularly limited as long as it can support the powder supply tube 12, and it is only necessary to have at least one. At this time, the gas can be integrated through the port 30a.

(變形例2) (Modification 2)

接著,針對本實施形態之變形例2進行說明。於第1圖中,雖將整流部14表示為獨立之構件,但如上所述,亦可將整流部14與粉末供給管支持部13一體成形。 Next, a second modification of the embodiment will be described. In the first drawing, the rectifying unit 14 is shown as an independent member. However, as described above, the rectifying unit 14 and the powder supply tube supporting unit 13 may be integrally formed.

而且,亦可將整流部14與氣體粉末混合部10一體成形。此時,在一體形成之氣體粉末混合部10以及整流部14之內側可嵌入有粉末供給管支持部13,亦可將氣體粉末混合部10、整流部14、以及粉末供給管支持部13之3者予以一體成形。 Further, the flow regulating portion 14 and the gas powder mixing portion 10 may be integrally formed. In this case, the powder supply tube support portion 13 may be fitted inside the integrally formed gas powder mixing portion 10 and the rectifying portion 14, and the gas powder mixing portion 10, the rectifying portion 14, and the powder supply tube supporting portion 13 may be 3 They are formed in one piece.

或者,亦可將整流部14與氣體室11一體成形。此時,可對一體形成之氣體室11以及整流部14嵌入粉末供給管支持部13,亦可將氣體室11、整流部14、以及粉末供給管支持部13之3者一體成形。 Alternatively, the flow regulating portion 14 may be integrally formed with the gas chamber 11. At this time, the powder supply tube support portion 13 may be fitted into the gas chamber 11 and the rectifying portion 14 which are integrally formed, or the gas chamber 11, the rectifying portion 14, and the powder supply tube support portion 13 may be integrally molded.

再者,亦可將整流部14與粉末供給管12一體成形。此時,可將外加有粉末供給管支持部13之3者一體形成,亦可有別於粉末供給管支持部13,將透過對整流部14支持粉末供給管12之支持部將兩者一體形成。 Further, the flow regulating portion 14 and the powder supply pipe 12 may be integrally formed. In this case, the powder supply tube support portion 13 may be integrally formed, or may be formed separately from the powder supply tube support portion 13, and the support portion that supports the powder supply tube 12 through the rectifying portion 14 may be integrally formed. .

(變形例3) (Modification 3)

接著,針對本實施形態之變形例3進行說明。第7圖 係表示整流部之變形例之斜視圖。第7圖所示之整流部40係具備兩端形成開口之呈管狀的筒部41、以及設於該筒部41之內壁之複數個(於第7圖中為4個)的整流鰭片42。各整流鰭片42係呈板狀的整流構件,且以長度方向與筒部41之高度方向平行且長度方向之一端與筒部41之一邊的端面一致的方式配置。於第7圖中,雖將各整流鰭片42之長度方向的長度設為比筒部41之高度更短,但亦可將各整流鰭片42之長度最大伸長至與筒部41之高度同等之程度。 Next, a modification 3 of the embodiment will be described. Figure 7 It is a perspective view which shows the modification of a rectification part. The rectifying unit 40 shown in Fig. 7 includes a tubular portion 41 having a tubular shape at both ends, and a plurality of rectifying fins (four in FIG. 7) provided on the inner wall of the tubular portion 41. 42. Each of the fin fins 42 is a plate-shaped rectifying member, and is disposed such that the longitudinal direction thereof is parallel to the height direction of the tubular portion 41 and one end in the longitudinal direction is aligned with the end surface of one side of the tubular portion 41. In the seventh drawing, although the length of each of the fin fins 42 in the longitudinal direction is shorter than the height of the tubular portion 41, the length of each of the fin fins 42 may be extended to the maximum height of the tubular portion 41. The extent of it.

第8圖係對於第2圖所示之噴塗槍4裝設第7圖所示之整流部40以取代整流部14之狀態之剖面圖。藉由使用內側設有整流鰭片42之整流部40,可使從氣體室11經過整流部40流入氣體粉末混合部10之高壓氣體之整流效果進一步提升。 Fig. 8 is a cross-sectional view showing a state in which the rectifying portion 40 shown in Fig. 7 is attached to the coating gun 4 shown in Fig. 2 in place of the rectifying portion 14. By using the rectifying portion 40 in which the rectifying fins 42 are provided inside, the rectifying effect of the high-pressure gas flowing from the gas chamber 11 through the rectifying portion 40 into the gas-powder mixing portion 10 can be further enhanced.

另外,此時亦可與變形例2同樣地將筒部41與氣體粉末混合部10、氣體室11、粉末供給管12、或粉末供給管支持部13一體地成形。 Moreover, in this case, the tubular portion 41 can be integrally molded with the gas powder mixing portion 10, the gas chamber 11, the powder supply tube 12, or the powder supply tube support portion 13 in the same manner as in the second modification.

[實施例] [Examples]

(實施例1) (Example 1)

氣體室11之寬度L1為34mm,整流部14之長度L2為31.6mm(亦即,距離L3=2.4mm),整流部14之內徑為14.8mm,粉末供給管12之外徑為8mm。此時,面積B相對於面積A之比B/A約為1.0,滿足式(3)。 The width L 1 of the gas chamber 11 is 34 mm, and the length L 2 of the rectifying portion 14 is 31.6 mm (that is, the distance L 3 = 2.4 mm), and the inner diameter of the rectifying portion 14 14.8 mm, the outer diameter of the powder supply tube 12 It is 8mm. At this time, the ratio B/A of the area B to the area A is about 1.0, which satisfies the formula (3).

將氣體室11內之溫度設為800℃,將壓力 維持在4MPa,使用4kg之銅粉末進行成膜。之後,拆下氣體粉末混合部10以目視觀察內壁時,粉末幾乎均勻地附著。 The temperature in the gas chamber 11 is set to 800 ° C, and the pressure is applied. The film was maintained at 4 MPa and 4 kg of copper powder was used for film formation. Thereafter, when the gas powder mixing portion 10 is removed and the inner wall is visually observed, the powder adheres almost uniformly.

(實施例2) (Example 2)

將整流部14之長度L2設為27mm(亦即,距離L3=7mm),其他各部之尺寸係與實施例1相同。面積B相對於面積A之比B/A約為3.0,滿足式(3)。 The length L2 of the flow regulating portion 14 is set to 27 mm (that is, the distance L3 = 7 mm), and the dimensions of the other portions are the same as in the first embodiment. The ratio B/A of the area B to the area A is about 3.0, which satisfies the formula (3).

以與實施例1相同的條件進行成膜後,拆下氣體粉末混合部10以目視觀察內壁。第9圖係表示實施例2之實驗後之氣體粉末混合部10之照片。第9圖所示之黑色區域111係粉末附著之區域。如第9圖所示,於氣體粉末混合部10之內壁,粉末幾乎均勻地附著。 After the film formation was carried out under the same conditions as in Example 1, the gas powder mixing portion 10 was removed to visually observe the inner wall. Fig. 9 is a photograph showing the gas powder mixing portion 10 after the experiment of Example 2. The black area 111 shown in Fig. 9 is a region where the powder adheres. As shown in Fig. 9, on the inner wall of the gas powder mixing portion 10, the powder adheres almost uniformly.

(實施例3) (Example 3)

將整流部14之長度L2設為15.2mm(亦即,距離L3=18.8mm),其他各部之尺寸係與實施例1相同。面積B相對於面積A之比B/A約為8.0,滿足式(3)。 The length L 2 of the flow regulating portion 14 is set to 15.2 mm (that is, the distance L 3 = 18.8 mm), and the dimensions of the other portions are the same as in the first embodiment. The ratio B/A of the area B to the area A is about 8.0, which satisfies the formula (3).

以與實施例1相同的條件進行成膜後,拆下氣體粉末混合部10以目視觀察內壁時,粉末幾乎均勻地附著。 After the film formation was carried out under the same conditions as in Example 1, the gas powder mixing portion 10 was removed, and when the inner wall was visually observed, the powder adhered almost uniformly.

(比較例1) (Comparative Example 1)

與以往之成膜裝置相同,於氣體室11內不裝設整流部14(亦即,整流部之長度L2=0mm,距離L3=34mm),以與實施例1相同的條件進行成膜。此時,對於面積A之面積B之比B/A約為14.4,不滿足式(3)。成膜後,取下氣體粉 末混合部10以目視觀察內壁時,內壁一部之側偏向附著有粉末。 Similarly to the conventional film forming apparatus, the rectifying unit 14 is not installed in the gas chamber 11 (that is, the length L 2 of the rectifying unit is 0 mm, and the distance L 3 is 34 mm), and film formation is performed under the same conditions as in the first embodiment. . At this time, the ratio B/A of the area B of the area A is about 14.4, and the formula (3) is not satisfied. After the film formation, the gas powder mixing portion 10 was taken out, and when the inner wall was visually observed, the powder adhered to the side of the inner wall.

(比較例2) (Comparative Example 2)

將整流部14之長度L2設為13mm(亦即,距離L3=21mm),其他各部之尺寸係與實施例1相同。面積B相對於面積A之比B/A約為8.9,未滿足式(3)。 The length L 2 of the flow regulating portion 14 is set to 13 mm (that is, the distance L 3 = 21 mm), and the dimensions of the other portions are the same as in the first embodiment. The ratio B/A of the area B to the area A is about 8.9, and the formula (3) is not satisfied.

以與實施例1相同的條件進行成膜後,拆下氣體粉末混合部10以目視觀察內壁。第10圖係表示比較例2之實驗後之氣體粉末混合部10之照片。第10圖所示之黑色區域121係粉末附著之區域。如第10圖所示,在氣體粉末混合部10之內壁,粉末係偏向一部分之側(第10圖之左側)附著。另一方面,與區域121相對向之側的區域122不太有粉末附著。 After the film formation was carried out under the same conditions as in Example 1, the gas powder mixing portion 10 was removed to visually observe the inner wall. Fig. 10 is a photograph showing the gas powder mixing portion 10 after the experiment of Comparative Example 2. The black area 121 shown in Fig. 10 is a region where the powder adheres. As shown in Fig. 10, on the inner wall of the gas powder mixing portion 10, the powder adheres to a part of the side (the left side of Fig. 10). On the other hand, the region 122 on the side opposite to the region 121 is less likely to adhere to the powder.

4‧‧‧噴塗槍 4‧‧‧ spray gun

5‧‧‧噴嘴 5‧‧‧ nozzle

10‧‧‧氣體粉末混合部 10‧‧‧Gas Powder Mixing Department

11‧‧‧氣體室 11‧‧‧ gas chamber

12‧‧‧粉末供給管 12‧‧‧Powder supply tube

12a‧‧‧射出口 12a‧‧‧shots

13‧‧‧粉末供給管支持部 13‧‧‧Powder Supply Pipe Support Department

13a‧‧‧氣體通過口 13a‧‧‧ gas passage

14‧‧‧整流部 14‧‧‧Rectifier

14a‧‧‧開口面 14a‧‧‧Open face

15‧‧‧溫度感測器 15‧‧‧Temperature Sensor

16‧‧‧壓力感測器 16‧‧‧ Pressure Sensor

17‧‧‧氣體供給路 17‧‧‧ gas supply road

Claims (8)

一種成膜裝置,係將材料的粉末與氣體一同從噴嘴噴射,使前述粉末直接以固相狀態噴附並堆積於基材的表面,藉此形成覆膜的成膜裝置,係具備:氣體粉末混合部,係將前述氣體與前述粉末予以混合並供給至前述噴嘴;氣體室,係透過至少1個氣體通過口與前述氣體粉末混合部連通,將前述氣體導入至前述氣體粉末混合部;粉末供給管,係將前述粉末供給至前述氣體粉末混合部,且係貫通前述氣體室,使前述粉末的射出口突出於前述氣體粉末混合部並且朝向噴嘴的前端方向配置;以及整流部,係設於前述氣體室內之前述粉末供給管之周圍,對被導入至前述氣體室之前述氣體予以整流,使之通過前述至少1個氣體通過口。 A film forming apparatus is a film forming apparatus which sprays a powder of a material together with a gas from a nozzle to directly deposit the powder in a solid phase state and deposits on a surface of the substrate, thereby forming a film, which is provided with a gas powder. a mixing unit that mixes the gas with the powder and supplies the same to the nozzle; the gas chamber communicates with the gas powder mixing unit through at least one gas passage port, and introduces the gas into the gas powder mixing unit; In the tube, the powder is supplied to the gas powder mixing unit, and the gas chamber is inserted through the gas chamber so that the injection port of the powder protrudes from the gas powder mixing portion and is disposed toward the tip end of the nozzle; and the rectifying portion is provided in the foregoing The gas introduced into the gas chamber is rectified around the powder supply pipe in the gas chamber and passed through the at least one gas passage port. 如申請專利範圍第1項所述之成膜裝置,其中,前述整流部具有兩端形成開口之呈管狀的構件,並配置成使該構件之一邊的開口面觸抵前述至少1個氣體通過口,使另一邊的開口面相對向於前述氣體室之內壁。 The film forming apparatus according to claim 1, wherein the rectifying portion has a tubular member having an opening at both ends, and is disposed such that an opening surface of one of the members touches the at least one gas passage opening The opposite side of the opening is opposed to the inner wall of the gas chamber. 如申請專利範圍第2項所述之成膜裝置,其中,將前述另一邊的開口面中之供導入至前述氣體室之前述氣體流入之區域的面積設為面積A,將從與前述另一邊的開口面相對向之前述內壁至前述另一邊的開口面為止 之距離設為高度,將以前述區域為底面之柱形狀之側面之面積設為面積B時,前述面積B係為前述面積A以上。 The film forming apparatus according to claim 2, wherein an area of the opening surface of the other side into which the gas is introduced into the gas chamber is an area A, and the other side is The opening surface faces the inner wall to the opening surface of the other side The distance is set to the height, and when the area of the side surface of the columnar shape in which the area is the bottom surface is the area B, the area B is equal to or larger than the area A. 如申請專利範圍第3項所述之成膜裝置,其中,前述面積B係為前述面積A之8倍以下。 The film forming apparatus according to claim 3, wherein the area B is 8 times or less of the area A. 如申請專利範圍第2項所述之成膜裝置,其中,前述整流部係更具有設於前述形成為管狀的構件之內壁面之複數個整流構件。 The film forming apparatus according to claim 2, wherein the rectifying portion further includes a plurality of rectifying members provided on an inner wall surface of the tubular member. 如申請專利範圍第1項所述之成膜裝置,其中,前述整流部之開口面係形成為與前述氣體粉末混合部之與長度方向正交的剖面相似的形狀。 The film forming apparatus according to claim 1, wherein the opening surface of the rectifying portion is formed in a shape similar to a cross section orthogonal to the longitudinal direction of the gas powder mixing portion. 如申請專利範圍第6項所述之成膜裝置,其中,前述整流部之開口面係形成為與前述氣體粉末混合部之與長度方向正交的剖面相同的形狀。 The film forming apparatus according to claim 6, wherein the opening surface of the rectifying portion is formed to have the same shape as a cross section orthogonal to the longitudinal direction of the gas powder mixing portion. 如申請專利範圍第1項所述之成膜裝置,其中,前述整流部之開口面係形成為圓形形狀、橢圓形形狀、矩形形狀、或多邊形形狀。 The film forming apparatus according to claim 1, wherein the opening surface of the rectifying portion is formed into a circular shape, an elliptical shape, a rectangular shape, or a polygonal shape.
TW104106797A 2014-03-07 2015-03-04 Film formation apparatus TWI603784B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014045459A JP6321407B2 (en) 2014-03-07 2014-03-07 Deposition equipment

Publications (2)

Publication Number Publication Date
TW201544193A true TW201544193A (en) 2015-12-01
TWI603784B TWI603784B (en) 2017-11-01

Family

ID=54055147

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104106797A TWI603784B (en) 2014-03-07 2015-03-04 Film formation apparatus

Country Status (3)

Country Link
JP (1) JP6321407B2 (en)
TW (1) TWI603784B (en)
WO (1) WO2015133338A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688992B (en) * 2016-08-12 2020-03-21 漢民科技股份有限公司 Gas injector for semiconductor processes and film deposition apparatus

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106367749B (en) * 2016-09-26 2019-01-25 西北工业大学 A kind of preparation method of pipe internal coating
KR101839030B1 (en) * 2017-08-22 2018-03-15 가람환경기술(주) Polymer coating device with double pipe type nozzle
KR102150586B1 (en) * 2018-08-22 2020-09-01 아이원스 주식회사 Apparatus for forming coating layer with guide nozzle
JP7120451B2 (en) * 2019-03-29 2022-08-17 日産自動車株式会社 cold spray equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0484533B1 (en) * 1990-05-19 1995-01-25 Anatoly Nikiforovich Papyrin Method and device for coating
JPH06165952A (en) * 1992-11-30 1994-06-14 Kyocera Corp Chamber for thermal spraying and thermal spraying method using the chamber
CA2433613A1 (en) * 2002-08-13 2004-02-13 Russel J. Ruprecht, Jr. Spray method for mcralx coating
US20050214474A1 (en) * 2004-03-24 2005-09-29 Taeyoung Han Kinetic spray nozzle system design
JP4765103B2 (en) * 2006-09-29 2011-09-07 日本ケミコン株式会社 Capacitor
JP2008302311A (en) * 2007-06-08 2008-12-18 Ihi Corp Cold spray process
JP2010047825A (en) * 2008-08-25 2010-03-04 Mitsubishi Heavy Ind Ltd Metal film forming method and aerospace structural member
US8020509B2 (en) * 2009-01-08 2011-09-20 General Electric Company Apparatus, systems, and methods involving cold spray coating
JP2011240314A (en) * 2010-05-21 2011-12-01 Kobe Steel Ltd Cold spray apparatus
JP4677050B1 (en) * 2010-07-20 2011-04-27 スタータック株式会社 Film forming method and composite material formed by the method
ES2670824T3 (en) * 2011-09-30 2018-06-01 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Procedure and device to discharge a coolant stream
CN103521404B (en) * 2013-10-25 2015-12-02 中国船舶重工集团公司第七二五研究所 A kind of Portable low-pressure cold spray apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688992B (en) * 2016-08-12 2020-03-21 漢民科技股份有限公司 Gas injector for semiconductor processes and film deposition apparatus

Also Published As

Publication number Publication date
TWI603784B (en) 2017-11-01
JP6321407B2 (en) 2018-05-09
WO2015133338A1 (en) 2015-09-11
JP2015168861A (en) 2015-09-28

Similar Documents

Publication Publication Date Title
TWI603784B (en) Film formation apparatus
US11767594B2 (en) Method and apparatus for atmospheric pressure plasma jet coating deposition on a substrate
US9168546B2 (en) Cold gas dynamic spray apparatus, system and method
JP5926725B2 (en) Dry ice snow spraying device
US10808323B2 (en) Cold spray nozzles
JP2006247639A (en) Nozzle for cold spraying, cold spray device and cold spray method using it
US20100019058A1 (en) Nozzle assembly for cold gas dynamic spray system
CA2874687C (en) Cold gas spraying gun with powder injector
EP2110178A1 (en) Cold gas-dynamic spray nozzle
KR20060097411A (en) Nozzle for cold spray and cold spray apparatus using the same
KR20180050357A (en) LAMINATE, AND METHOD FOR MANUFACTURING LAMINATE
JP6426647B2 (en) Spray nozzle, film forming apparatus, and method of forming film
RU2399694C1 (en) Procedure for surface gas-dynamic processing with powder material and facility for its implementation
CN107708877B (en) Film forming method and film forming apparatus
JP5305192B2 (en) Steel bar coating equipment
JP2018008260A (en) Pipe coating apparatus and coating method
KR20160080599A (en) Nozzle for injecting powder in room temperature
JP6588029B2 (en) Nozzle, film forming apparatus and film forming method
JP2007061678A (en) Film forming method
RU2505622C2 (en) Device for gas-dynamic application of coatings onto external cylindrical surfaces of products
TWI484557B (en) Member with flow path and method for manufacturing thereof
JP6637897B2 (en) Nozzle, film forming apparatus and film forming method
US20070114304A1 (en) Angular spray nozzle for gas dynamic spray machine
KR20190078384A (en) Apparatus for thermal spray coating
JP2015188868A (en) Guide connected to nozzle of powder spray device, and the powder spray device