TW201535418A - Connection structure manufacturing method - Google Patents

Connection structure manufacturing method Download PDF

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TW201535418A
TW201535418A TW104105916A TW104105916A TW201535418A TW 201535418 A TW201535418 A TW 201535418A TW 104105916 A TW104105916 A TW 104105916A TW 104105916 A TW104105916 A TW 104105916A TW 201535418 A TW201535418 A TW 201535418A
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electrode
connection
conductive paste
solder
solder particles
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TW104105916A
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Chinese (zh)
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TWI647709B (en
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Hideaki Ishizawa
Takashi Kubota
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Sekisui Chemical Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/08Metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/12Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/001Conductive additives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

Provided is a connection structure manufacturing method by which it is possible to efficiently dispose solder particles on electrodes and by which it is possible to increase conduction reliability between the electrodes. This connection structure manufacturing method comprises: a step for disposing a conductive paste on a surface of a first member to be connected, said conductive paste containing a plurality of solder particles and a thermosetting component; a step for disposing a second member to be connected on the reverse surface of the conductive paste from the first member to be connected side in a manner such that a first electrode and a second electrode oppose one another; and a step for forming a connection part from the conductive paste by heating the conductive paste, said connection part connecting the first member to be connected and the second member to be connected. In the step for disposing the second member to be connected and the step for forming the connection part, the weight of the second member to be connected is applied to the conductive paste without the application of pressure.

Description

連接構造體之製造方法 Manufacturing method of connecting structure

本發明係關於一種利用焊料粒子將電極間進行電性連接之連接構造體之製造方法。 The present invention relates to a method of manufacturing a bonded structure in which electrodes are electrically connected by solder particles.

各向異性導電糊及各向異性導電膜等各向異性導電材料已廣為人知。在上述各向異性導電材料中,於黏合劑樹脂中分散有導電性粒子。 Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material described above, conductive particles are dispersed in the binder resin.

為了獲得各種連接構造體,而將上述各向異性導電材料用於例如軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、以及軟性印刷基板與環氧玻璃基板之連接(FOB(Film on Board,鍍膜板))等。 In order to obtain various connection structures, the anisotropic conductive material is used for, for example, a connection between a flexible printed substrate and a glass substrate (FOG (Film on Glass)), and a connection between a semiconductor wafer and a flexible printed substrate (COF (Chip) On film, film flip chip), connection between semiconductor wafer and glass substrate (COG (Chip on Glass)), and connection between flexible printed substrate and epoxy glass substrate (FOB (Film on Board) )Wait.

於利用上述各向異性導電材料將例如軟性印刷基板之電極與環氧玻璃基板之電極進行電性連接時,係將含有導電性粒子之各向異性導電材料配置於環氧玻璃基板上。其次,積層軟性印刷基板,並進行加熱及加壓。藉此,使各向異性導電材料硬化,經由導電性粒子將電極間進行電性連接,而獲得連接構造體。 When the electrode of the flexible printed circuit board and the electrode of the epoxy glass substrate are electrically connected by the anisotropic conductive material, the anisotropic conductive material containing the conductive particles is placed on the epoxy glass substrate. Next, a flexible printed circuit board is laminated and heated and pressurized. Thereby, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a bonded structure.

作為上述各向異性導電材料之一例,下述專利文獻1中揭示有包含含有熱硬化性樹脂之樹脂層、焊料粉、及硬化劑,且上述焊料粉與上述硬化劑存在於上述樹脂層中之接著帶。該接著帶為膜狀,而非糊 狀。 As an example of the anisotropic conductive material, Patent Document 1 discloses a resin layer containing a thermosetting resin, a solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Then bring it. The subsequent strip is membranous, not paste shape.

又,專利文獻1中揭示有使用上述接著帶之接著方法。具體而言,自下而上依序積層第一基板、接著帶、第二基板、接著帶、及第三基板而獲得積層體。此時,使設置於第一基板之表面之第一電極與設置於第二基板之表面之第二電極相對向。又,使設置於第二基板之表面之第二電極與設置於第三基板之表面之第三電極相對向。然後,以特定溫度對積層體進行加熱而接著。藉此,獲得連接構造體。 Further, Patent Document 1 discloses a method of using the above-described subsequent tape. Specifically, the first substrate, the subsequent tape, the second substrate, the adhesive tape, and the third substrate are sequentially laminated from the bottom to the top to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Further, the second electrode provided on the surface of the second substrate faces the third electrode provided on the surface of the third substrate. Then, the laminate is heated at a specific temperature and then. Thereby, the connection structure is obtained.

又,專利文獻1中記載有就擠壓焊料粉使其流至電極表面並效率良好地移動之觀點而言,較佳為於接著時以特定壓力進行加壓,且記載有就進一步確實地形成焊料區域之觀點而言,加壓壓力例如設為0MPa以上,較佳為設為1MPa以上,進而記載有對接著帶刻意施加之壓力可為0MPa,亦可藉由配置於接著帶上之構件之自身重量對接著帶施加特定之壓力。 Further, in Patent Document 1, it is preferable to pressurize the solder powder to flow on the surface of the electrode and efficiently move it at a specific pressure in the subsequent step, and it is described that it is formed more reliably. From the viewpoint of the solder region, the pressurizing pressure is, for example, 0 MPa or more, preferably 1 MPa or more, and further described that the pressure applied to the subsequent tape may be 0 MPa or may be disposed on the member under the tape. The weight of the self exerts a specific pressure on the belt.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]WO2008/023452A1 [Patent Document 1] WO2008/023452A1

專利文獻1中所記載之接著帶為膜狀,而非糊狀。因此,難以將焊料粉有效率地配置於電極(線)上。例如,於專利文獻1中所記載之接著帶中,亦容易將焊料粉之一部分配置於未形成有電極之區域(間隔)。配置於未形成有電極之區域之焊料粉無助於電極間之導通。 The adhesive tape described in Patent Document 1 is in the form of a film rather than a paste. Therefore, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, it is also easy to arrange one of the solder powders in a region (interval) where no electrode is formed. The solder powder disposed in the region where the electrode is not formed does not contribute to conduction between the electrodes.

又,專利文獻1中記載有對接著帶刻意施加之壓力可為0MPa,但關於賦予超過0MPa之壓力之情形與設為0MPa之情形之效果之差異,並無任何記載。 Further, Patent Document 1 discloses that the pressure to be intentionally applied to the subsequent tape may be 0 MPa, but there is no description about the difference between the effect of applying a pressure exceeding 0 MPa and the case of setting it to 0 MPa.

本發明之目的在於提供一種可將焊料粒子有效率地配置於電極 上,而可提高電極間之導通可靠性之連接構造體之製造方法。 It is an object of the present invention to provide a solder particle that can be efficiently disposed on an electrode Further, a method of manufacturing a connection structure capable of improving the conduction reliability between electrodes can be achieved.

根據本發明之廣義態樣,提供一種連接構造體之製造方法,其包括:使用含有複數個焊料粒子與熱硬化性成分之導電糊,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電糊之步驟;將表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極相對向之方式配置於上述導電糊之與上述第1連接對象構件側相反之表面上之步驟;藉由將上述導電糊加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,而利用上述導電糊形成連接上述第1連接對象構件與上述第2連接對象構件之連接部之步驟,並且於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,不進行加壓,而對上述導電糊施加上述第2連接對象構件之重量。 According to a broad aspect of the present invention, a method of manufacturing a connection structure comprising: using a conductive paste containing a plurality of solder particles and a thermosetting component, and having a first connection member having at least one first electrode on a surface thereof a step of disposing the conductive paste on the surface; and a second connection member having at least one second electrode on the surface thereof, wherein the first electrode and the second electrode face each other and are disposed on the first connection of the conductive paste a step of forming the first connection member and the above-described conductive paste by heating the conductive paste to a temperature equal to or higher than a melting point of the solder particles and a hardening temperature of the thermosetting component. a step of connecting the connection member of the second connection target member, and in the step of arranging the second connection target member and forming the connection portion, applying the weight of the second connection target member to the conductive paste without applying pressure .

於本發明之連接構造體之製造方法之某特定態樣中,上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜、或剛性軟性基板。 In a specific aspect of the method for producing a connection structure according to the present invention, the second connection member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate.

於本發明之連接構造體之製造方法之某特定態樣中,將上述第1電極與上述第2電極相對向之位置之上述連接部之距離設為3μm以上、40μm以下。 In a specific aspect of the method for producing a connection structure according to the present invention, the distance between the first electrode and the second electrode facing the connection portion is set to be 3 μm or more and 40 μm or less.

於本發明之連接構造體之製造方法之某特定態樣中,於上述連接部中,將上述第1電極與上述第2電極相對向之部分之大小設為上述第1電極與上述第2電極未對向之部分之大小之2倍以上、40倍以下。 In a specific aspect of the method for producing a connection structure according to the present invention, in the connection portion, a size of a portion facing the first electrode and the second electrode is the first electrode and the second electrode The size of the unopposed part is 2 times or more and 40 times or less.

於本發明之導電糊之某特定態樣中,25℃下之黏度為10Pa‧s以上、800Pa‧s以下。 In a specific aspect of the conductive paste of the present invention, the viscosity at 25 ° C is 10 Pa ‧ or more and 800 Pa ‧ or less.

於本發明之導電糊之某特定態樣中,於上述焊料粒子之熔點以下之溫度範圍條件下之黏度之最低值為0.1Pa‧s以上、10Pa‧s以 下。 In a specific aspect of the conductive paste of the present invention, the minimum value of the viscosity under the temperature range below the melting point of the solder particles is 0.1 Pa ‧ s or more, 10 Pa ‧ s under.

於本發明之連接構造體之製造方法之某特定態樣中,上述連接部具有角部,上述第1連接對象構件於上述角部之內側具有位置對準用之第1電極作為上述第1電極,上述第2連接對象構件於上述角部之內側具有位置對準用之第2電極作為上述第2電極,上述位置對準用之第1電極及上述位置對準用之第2電極與上述角部之前端之最短距離為75μm以上、3000μm以下。 In a specific aspect of the method for producing a connection structure according to the present invention, the connection portion has a corner portion, and the first connection member has a first electrode for alignment on the inside of the corner portion as the first electrode. The second connection member has a second electrode for alignment on the inner side of the corner portion as the second electrode, and the first electrode for alignment and the second electrode for alignment and the front end of the corner portion The shortest distance is 75 μm or more and 3000 μm or less.

於本發明之連接構造體之製造方法之某特定態樣中,上述第1連接對象構件具有複數個具有長度方向與寬度方向之第1主電極作為上述第1電極,上述第2連接對象構件具有複數個具有長度方向與寬度方向之第2主電極作為上述第2電極,於將上述第1主電極之長度方向及寬度方向上之上述第1連接對象構件之線膨脹率與上述第2主電極之長度方向及寬度方向上之上述第2連接對象構件之線膨脹率的差設為C(ppm/℃)、將形成上述連接部時之上述導電糊之加熱溫度設為T(℃)、將上述第1主電極之寬度方向上複數個上述第1主電極整體之尺寸設為Yt(mm)、將複數個上述第1主電極之每個電極於寬度方向上之尺寸設為Ya(mm)時,滿足式:C×T/1000000×Yt<0.5×Ya。 In a specific aspect of the method for producing a connection structure according to the present invention, the first connection member has a plurality of first main electrodes having a longitudinal direction and a width direction as the first electrode, and the second connection member has a plurality of second main electrodes having a longitudinal direction and a width direction as the second electrode, and a linear expansion ratio of the first connection member in the longitudinal direction and the width direction of the first main electrode and the second main electrode The difference in linear expansion ratio of the second connection member in the longitudinal direction and the width direction is C (ppm/° C.), and the heating temperature of the conductive paste when the connection portion is formed is T (° C.). The size of the plurality of first main electrodes in the width direction of the first main electrode is Yt (mm), and the size of each of the plurality of first main electrodes in the width direction is Ya (mm) When satisfied, the formula: C × T / 1000000 × Yt < 0.5 × Ya.

本發明之連接構造體之製造方法包括:使用含有複數個焊料粒子與熱硬化性成分之導電糊,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電糊之步驟;將表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極相對向之方式配置於上述導電糊之與上述第1連接對象構件側相反之表面上之步驟;藉由將上述導電糊加熱至上述焊料粒子之熔點以上及上述熱硬化性成分之硬化溫度以上,而利用上述導電糊形成連接上述第1連接對象構件與上述第2連接對象構件之連接部之步驟;並且於配置上述第2連接 對象構件之步驟及形成上述連接部之步驟中,不進行加壓,而對上述導電糊施加上述第2連接對象構件之重量,因此可將焊料粒子有效率地配置於電極上,而可提高電極間之導通可靠性。 The method for producing a connection structure according to the present invention includes the step of disposing the conductive paste on the surface of the first connection member having at least one first electrode on the surface thereof by using a conductive paste containing a plurality of solder particles and a thermosetting component. And the second connection member having at least one second electrode on the surface thereof is disposed on the surface of the conductive paste opposite to the first connection member side so that the first electrode and the second electrode face each other By heating the conductive paste to a temperature equal to or higher than a melting point of the solder particles and a curing temperature of the thermosetting component, a connection portion connecting the first connection member and the second connection member is formed by the conductive paste. Step; and configuring the second connection described above In the step of forming the target member and the step of forming the connecting portion, the weight of the second connection member is applied to the conductive paste without applying pressure, so that the solder particles can be efficiently disposed on the electrode, and the electrode can be improved. Continuity reliability.

1‧‧‧連接構造體 1‧‧‧Connection structure

1X‧‧‧連接構造體 1X‧‧‧Connection structure

2‧‧‧第1連接對象構件 2‧‧‧1st connection object component

2a‧‧‧第1電極 2a‧‧‧1st electrode

3‧‧‧第2連接對象構件 3‧‧‧2nd connection object component

3a‧‧‧第2電極 3a‧‧‧2nd electrode

4‧‧‧連接部 4‧‧‧Connecting Department

4A‧‧‧焊料部 4A‧‧‧ solder department

4B‧‧‧硬化物部 4B‧‧‧ Hardened Parts

4X‧‧‧連接部 4X‧‧‧Connecting Department

4XA‧‧‧焊料部 4XA‧‧‧ solder department

4XB‧‧‧硬化物部 4XB‧‧‧ Hardened Parts Department

11‧‧‧導電糊 11‧‧‧Electric paste

11A‧‧‧焊料粒子 11A‧‧‧ solder particles

11B‧‧‧熱硬化性成分 11B‧‧‧ thermosetting ingredients

51‧‧‧連接構造體 51‧‧‧Connection structure

51X‧‧‧連接構造體 51X‧‧‧Connection structure

51Y‧‧‧連接構造體 51Y‧‧‧Connection structure

52‧‧‧第1連接對象構件 52‧‧‧1st connection object component

52a‧‧‧第1電極 52a‧‧‧1st electrode

52aa‧‧‧位置對準用之第1電極 52aa‧‧‧1st electrode for position alignment

52ab‧‧‧第1主電極 52ab‧‧‧1st main electrode

52X‧‧‧第1連接對象構件 52X‧‧‧1st connection object component

52Y‧‧‧第1連接對象構件 52Y‧‧‧1st connection object component

53‧‧‧第2連接對象構件 53‧‧‧2nd connection object component

53a‧‧‧第2電極 53a‧‧‧2nd electrode

53aa‧‧‧位置對準用之第2電極 53aa‧‧‧2nd electrode for position alignment

53ab‧‧‧第2主電極 53ab‧‧‧2nd main electrode

53X‧‧‧第2連接對象構件 53X‧‧‧2nd connection object component

53Y‧‧‧第2連接對象構件 53Y‧‧‧2nd connection object component

54‧‧‧連接部 54‧‧‧Connecting Department

54A‧‧‧焊料部 54A‧‧‧ solder department

54B‧‧‧硬化物部 54B‧‧‧ Hardened Parts

54X‧‧‧連接部 54X‧‧‧Connecting Department

54XA‧‧‧焊料部 54XA‧‧‧ solder department

54XB‧‧‧硬化物部 54XB‧‧‧ Hardened Parts

54Y‧‧‧連接部 54Y‧‧‧Connecting Department

54YA‧‧‧焊料部 54YA‧‧‧ solder department

54YB‧‧‧硬化物部 54YB‧‧‧ Hardened Parts

C‧‧‧角部 C‧‧‧ corner

Yt‧‧‧第1主電極整體之尺寸 Yt‧‧‧1st main electrode size

Ya‧‧‧第1主電極之每個電極於寬度方向上之尺寸 Ya‧‧‧Dimensions of each electrode of the 1st main electrode in the width direction

圖1係模式性地表示藉由本發明之一實施形態之連接構造體之製造方法而獲得之連接構造體之部分缺欠正視剖面圖。 Fig. 1 is a partially cutaway front elevational cross-sectional view schematically showing a connection structure obtained by a method of manufacturing a connection structure according to an embodiment of the present invention.

圖2(a)~(c)係用以說明本發明之一實施形態之連接構造體之製造方法之各步驟的剖視圖。 2(a) to 2(c) are cross-sectional views for explaining respective steps of a method of manufacturing a connection structure according to an embodiment of the present invention.

圖3(a)係表示連接構造體之變化例之俯視圖,圖3(b)係沿圖3(a)之I-I線之剖視圖。 Fig. 3(a) is a plan view showing a variation of the connection structure, and Fig. 3(b) is a cross-sectional view taken along line I-I of Fig. 3(a).

圖4(a)係表示連接構造體之變化例之俯視圖,圖4(b)係沿圖4(a)之I-I線之剖視圖,圖4(c)係沿圖4(a)之II-II線之剖視圖。 Fig. 4(a) is a plan view showing a variation of the connection structure, Fig. 4(b) is a cross-sectional view taken along line II of Fig. 4(a), and Fig. 4(c) is taken along line II-II of Fig. 4(a). A cross-sectional view of the line.

圖5(a)係表示連接構造體之變化例之俯視圖,圖5(b)係沿圖5(a)之I-I線之剖視圖。 Fig. 5(a) is a plan view showing a variation of the connection structure, and Fig. 5(b) is a cross-sectional view taken along line I-I of Fig. 5(a).

圖6係表示連接構造體之變化例之部分缺欠正視剖面圖。 Fig. 6 is a partial front elevational cross-sectional view showing a variation of the connection structure.

圖7(a)、(b)及(c)係表示本發明之實施形態所包括之連接構造體之一例的圖像,圖7(a)及(b)為剖面圖像,圖7(c)為平面圖像。 7(a), 7(b) and 7(c) are views showing an example of a connection structure included in an embodiment of the present invention, and Figs. 7(a) and (b) are cross-sectional images, and Fig. 7(c) ) is a flat image.

圖8(a)、(b)及(c)係表示本發明之實施形態不包括之連接構造體之一例的圖像,圖8(a)及(b)為剖面圖像,圖8(c)為平面圖像。 8(a), (b) and (c) are views showing an example of a connection structure not included in the embodiment of the present invention, and Figs. 8(a) and (b) are cross-sectional images, and Fig. 8(c) ) is a flat image.

以下,對本發明之詳細內容進行說明。 Hereinafter, the details of the present invention will be described.

於本發明之連接構造體之製造方法中,使用導電糊、第1連接對象構件、及第2連接對象構件。本發明之連接構造體之製造方法所使用之導電材料為導電糊而非導電膜。上述導電糊含有複數個焊料粒子、與熱硬化性成分。上述第1連接對象構件於表面具有至少1個第1電極。上述第2連接對象構件於表面具有至少1個第2電極。 In the method of manufacturing the connection structure of the present invention, the conductive paste, the first connection member, and the second connection member are used. The conductive material used in the method for producing the bonded structure of the present invention is a conductive paste instead of a conductive film. The conductive paste contains a plurality of solder particles and a thermosetting component. The first connection target member has at least one first electrode on the surface. The second connection target member has at least one second electrode on the surface.

本發明之連接構造體之製造方法包括如下步驟:將上述導電糊配置於上述第1連接對象構件之表面上之步驟;將上述第2連接對象構件以上述第1電極與上述第2電極相對向之方式配置於上述導電糊之與上述第1連接對象構件側相反之表面上之步驟;藉由將上述導電糊加熱至上述焊料粒子之熔點以上及上述熱硬化性成分之硬化溫度以上,而利用上述導電糊形成連接上述第1連接對象構件與上述第2連接對象構件之連接部之步驟。於本發明之連接構造體之製造方法中,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,不進行加壓,而對上述導電糊施加上述第2連接對象構件之重量。於本發明之連接構造體之製造方法中,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,對於上述導電糊,不施加超過上述第2連接對象構件之重量之力之加壓壓力。 The method for manufacturing a connection structure according to the present invention includes the steps of: disposing the conductive paste on a surface of the first connection member; and facing the second connection member with the first electrode and the second electrode And a step of disposing the conductive paste on a surface opposite to the first connection target member side; and heating the conductive paste to a temperature higher than a melting point of the solder particles and a hardening temperature of the thermosetting component The conductive paste forms a step of connecting a connection portion between the first connection target member and the second connection target member. In the method of manufacturing the connection structure of the present invention, in the step of disposing the second connection member and the step of forming the connection portion, the weight of the second connection member is applied to the conductive paste without applying pressure. . In the method of manufacturing the connection structure of the present invention, in the step of disposing the second connection member and the step of forming the connection portion, the conductive paste is not subjected to a force exceeding the weight of the second connection member. Pressurized pressure.

於本發明之連接構造體之製造方法中,由於採用上述構成,因此複數個焊料粒子容易聚集於第1電極與第2電極之間,而可將複數個焊料粒子有效率地配置於電極(線)上。又,難以使複數個焊料粒子之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之焊料粒子之量非常少。因此,可提高第1電極與第2電極間之導通可靠性。並且可防止不可連接之橫向鄰接之電極間之電性連接,而可提高絕緣可靠性。 In the method for manufacturing a connection structure according to the present invention, since the plurality of solder particles are easily collected between the first electrode and the second electrode, a plurality of solder particles can be efficiently disposed on the electrode (line). )on. Further, it is difficult to arrange one of the plurality of solder particles in a region (interval) in which the electrode is not formed, and the amount of the solder particles disposed in the region where the electrode is not formed can be extremely small. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. Moreover, the electrical connection between the electrodes adjacent to each other that are not connectable can be prevented, and the insulation reliability can be improved.

如上所述,本發明者等人發現,為了將複數個焊料粒子有效率地配置於電極上,且使配置於未形成有電極之區域之焊料粒子之量非常少,需使用導電糊而非導電膜。進而,本發明者等人發現,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,若不進行加壓,而對上述導電糊施加上述第2連接對象構件之重量,則於形成連接部前配置於未形成有電極之區域(間隔)之焊料粒子變得進一步容易聚集於第1電極與第2電極之間,而可將複數個焊料粒子有效率地配 置於電極(線)上。於本發明中,組合採用使用導電糊而非導電膜的構成、及不進行加壓而對上述導電糊施加上述第2連接對象構件之重量之構成,對獲得本發明之效果而言具有較大之意義。 As described above, the inventors of the present invention have found that in order to efficiently arrange a plurality of solder particles on an electrode and to have a very small amount of solder particles disposed in a region where no electrode is formed, it is necessary to use a conductive paste instead of conductive. membrane. Furthermore, the inventors of the present invention have found that, in the step of arranging the second connection member and the step of forming the connection portion, if the weight of the second connection member is applied to the conductive paste without applying pressure, The solder particles disposed in the region (interval) where the electrode is not formed before the formation of the connection portion are further easily collected between the first electrode and the second electrode, and the plurality of solder particles can be efficiently matched Place on the electrode (line). In the present invention, a configuration in which a conductive paste is used instead of a conductive film and a structure in which the weight of the second connection member is applied to the conductive paste without pressurization is used in combination, and the effect of the present invention is large. The meaning.

又,若使用導電糊而非導電膜,則亦可根據導電糊之塗佈量,而適當調整連接部之厚度。另一方面,導電膜存在如下問題:為了改變或調整連接部之厚度,必須準備不同厚度之導電膜,或者準備特定厚度之導電膜。 Further, when a conductive paste is used instead of the conductive film, the thickness of the joint portion can be appropriately adjusted depending on the amount of the conductive paste applied. On the other hand, the conductive film has a problem that in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film of a different thickness or prepare a conductive film of a specific thickness.

以下,一面參照圖式,一面對本發明之具體之實施形態及實施例進行說明,藉此使本發明變得明確。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the specific embodiments and embodiments of the invention.

首先,圖1中以部分缺欠正視剖面圖模式性地表示藉由本發明之一實施形態之連接構造體之製造方法而獲得之連接構造體。 First, a connection structure obtained by a method of manufacturing a connection structure according to an embodiment of the present invention is schematically shown in a partial defect front view in FIG.

圖1所示之連接構造體1具備第1連接對象構件2、第2連接對象構件3、及連接第1連接對象構件2與第2連接對象構件3之連接部4。連接部4係藉由含有複數個焊料粒子與熱硬化性成分之導電糊所形成。連接部4具有複數個焊料粒子聚集並互相接合而成之焊料部4A、及使熱硬化性成分進行熱硬化而成之硬化物部4B。 The connection structure 1 shown in FIG. 1 includes a first connection object member 2, a second connection object member 3, and a connection portion 4 that connects the first connection object member 2 and the second connection object member 3. The connecting portion 4 is formed by a conductive paste containing a plurality of solder particles and a thermosetting component. The connection portion 4 has a solder portion 4A in which a plurality of solder particles are aggregated and joined to each other, and a cured portion 4B in which a thermosetting component is thermally cured.

第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件3於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a利用焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3利用焊料部4A而電性連接。再者,於連接部4,於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)不存在焊料。於與焊料部4A不同之區域(硬化物部4B部分)不存在與焊料部4A分離之焊料。再者,若為少量,則亦可於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)存在焊料。 The first connection target member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the front surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection object member 2 and the second connection object member 3 are electrically connected by the solder portion 4A. Further, in the connection portion 4, solder is not present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. There is no solder separated from the solder portion 4A in a region different from the solder portion 4A (the portion of the cured portion 4B). In addition, in a small amount, solder may be present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a.

如圖1所示,於連接構造體1中,複數個焊料粒子熔融後,焊料 粒子之熔融物於電極之表面潤濕擴散後固化,而形成焊料部4A。因此,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之連接面積增大。即,藉由使用焊料粒子,與使用導電性外表面為鎳、金或銅等金屬之導電性粒子之情形相比,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之接觸面積增大。因此,連接構造體1之導通可靠性及連接可靠性提高。再者,導電糊亦可含有助焊劑。於使用助焊劑之情形時,助焊劑通常會因加熱而逐漸失活。 As shown in FIG. 1, in the connection structure 1, after a plurality of solder particles are melted, the solder The melt of the particles is wet-diffused on the surface of the electrode and then solidified to form the solder portion 4A. Therefore, the connection area between the solder portion 4A and the first electrode 2a and the solder portion 4A and the second electrode 3a is increased. In other words, by using the solder particles, the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second electrode 3a are used as compared with the case where the conductive outer surface is a conductive particle of a metal such as nickel, gold or copper. The contact area is increased. Therefore, the connection reliability and connection reliability of the connection structure 1 are improved. Further, the conductive paste may also contain a flux. In the case of flux, the flux is usually deactivated by heating.

再者,於圖1所示之連接構造體1中,焊料部4A全部位於第1、第2電極2a、3a間之相對向之區域。圖6所示之變化例之連接構造體1X中,僅連接部4X不同於圖1所示之連接構造體1。連接部4X具有焊料部4XA與硬化物部4XB。如連接構造體1X般,亦可為焊料部4XA之大部分位於第1、第2電極2a、3a相對向之區域,而焊料部4XA之一部分自第1、第2電極2a、3a相對向之區域向側向伸出。自第1、第2電極2a、3a相對向之區域向側向伸出之焊料部4XA係焊料部4XA之一部分,並非與焊料部4XA分離之焊料。再者,於本實施形態中,可使與焊料部分離之焊料之量較少,但與焊料部分離之焊料亦可存在於硬化物部中。 Further, in the connection structure 1 shown in Fig. 1, the solder portions 4A are all located in the opposing regions between the first and second electrodes 2a and 3a. In the connection structure 1X of the variation shown in Fig. 6, only the connection portion 4X is different from the connection structure 1 shown in Fig. 1 . The connecting portion 4X has a solder portion 4XA and a cured portion 4XB. As in the connection structure 1X, most of the solder portion 4XA may be located in a region where the first and second electrodes 2a and 3a face each other, and a portion of the solder portion 4XA may be opposed to the first and second electrodes 2a and 3a. The area extends laterally. A portion of the solder portion 4XA-based solder portion 4XA that protrudes laterally from the region in which the first and second electrodes 2a and 3a face each other is not solder separated from the solder portion 4XA. Further, in the present embodiment, the amount of solder separated from the solder portion may be small, but the solder separated from the solder portion may be present in the cured portion.

若減少焊料粒子之使用量,則變得容易獲得連接構造體1。若增多焊料粒子之使用量,則變得容易獲得連接構造體1X。 When the amount of use of the solder particles is reduced, the connection structure 1 is easily obtained. When the amount of use of the solder particles is increased, the connection structure 1X is easily obtained.

其次,對用以獲得圖1所示之連接構造體1的本發明之一實施形態之連接構造體之製造方法進行說明。 Next, a method of manufacturing a joint structure according to an embodiment of the present invention for obtaining the joint structure 1 shown in Fig. 1 will be described.

首先,準備表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖2(a)所示,於第1連接對象構件2之表面上配置含有複數個焊料粒子11A與熱硬化性成分11B之導電糊11(第1步驟)。於第1連接對象構件2之設置有第1電極2a之表面上配置導電糊11。於配置導電糊11後,焊料粒子11A被配置於第1電極2a(線)上、及未形成有第1電極2a 之區域(間隔)上之兩者。 First, the first connection target member 2 having the first electrode 2a on the front surface (upper surface) is prepared. Next, as shown in FIG. 2(a), a conductive paste 11 containing a plurality of solder particles 11A and a thermosetting component 11B is placed on the surface of the first connection member 2 (first step). The conductive paste 11 is placed on the surface of the first connection member 2 on which the first electrode 2a is provided. After the conductive paste 11 is disposed, the solder particles 11A are disposed on the first electrode 2a (line) and the first electrode 2a is not formed. Both of the areas (intervals).

作為導電糊11之配置方法,並無特別限定,可列舉利用分注器所進行之塗佈、網版印刷、及利用噴墨裝置所進行之噴出等。 The method of disposing the conductive paste 11 is not particularly limited, and examples thereof include coating by a dispenser, screen printing, and ejection by an inkjet device.

又,準備表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖2(b)所示,於第1連接對象構件2之表面上之導電糊11中,於導電糊11之與第1連接對象構件2側相反之側之表面上配置第2連接對象構件3(第2步驟)。於導電糊11之表面上,自第2電極3a側起配置第2連接對象構件3。此時,使第1電極2a與第2電極3a相對向。 Moreover, the second connection member 3 having the second electrode 3a on the front surface (lower surface) is prepared. Next, as shown in FIG. 2(b), in the conductive paste 11 on the surface of the first connection member 2, the second connection is placed on the surface of the conductive paste 11 on the side opposite to the first connection target member 2 side. Target member 3 (second step). The second connection member 3 is placed on the surface of the conductive paste 11 from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.

其次,將導電糊11加熱至焊料粒子11A之熔點以上及熱硬化性成分11B之硬化溫度以上(第3步驟)。即,將導電糊11加熱至焊料粒子11A之熔點及熱硬化性成分11B之硬化溫度中相對較低之溫度以上。於該加熱時,未形成有電極之區域所存在之焊料粒子11A會聚集於第1電極2a與第2電極3a之間(自凝集效應)。於本實施形態中,由於使用導電糊而非導電膜,因此焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。又,焊料粒子11A熔融而互相接合。又,熱硬化性成分11B發生熱硬化。其結果為,如圖2(c)所示,利用導電糊11而形成連接第1連接對象構件2與第2連接對象構件3之連接部4。利用導電糊11而形成連接部4,利用複數個焊料粒子11A進行接合而形成焊料部4A,利用熱硬化性成分11B進行熱硬化而形成硬化物部4B。若焊料粒子11A迅速移動,則自未位於第1電極2a與第2電極3a之間之焊料粒子11A開始移動起,直至第1電極2a與第2電極3a之間焊料粒子11A之移動結束為止,亦可不將溫度保持為固定。 Next, the conductive paste 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A and the hardening temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature at which the melting point of the solder particles 11A and the hardening temperature of the thermosetting component 11B are relatively low. At the time of this heating, the solder particles 11A existing in the region where the electrode is not formed are collected between the first electrode 2a and the second electrode 3a (self-aggregation effect). In the present embodiment, since the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Further, the solder particles 11A are melted and joined to each other. Further, the thermosetting component 11B is thermally cured. As a result, as shown in FIG. 2( c ), the connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed by the conductive paste 11 . The connection portion 4 is formed by the conductive paste 11, and the solder portion 4A is joined by a plurality of solder particles 11A, and is thermally cured by the thermosetting component 11B to form the cured portion 4B. When the solder particles 11A move rapidly, the solder particles 11A that are not located between the first electrode 2a and the second electrode 3a start to move until the movement of the solder particles 11A between the first electrode 2a and the second electrode 3a is completed. It is also possible not to keep the temperature fixed.

又,亦可於第3步驟之前半段設置預加熱步驟。該所謂預加熱步驟係指於對導電糊11施加第2連接對象構件3之重量之狀態下,於焊料之熔融溫度以上、實質上熱硬化性成分11B不發生熱硬化之溫度下,進行5秒至60秒之加熱之步驟。藉由設置該步驟,使焊料粒子聚集於 第1電極與第2電極之間之作用進一步提高,同時可抑制有可能產生於第1連接對象構件與第2連接對象構件之間的孔隙。 Further, a preheating step may be provided in the first half of the third step. In the state in which the weight of the second connection member 3 is applied to the conductive paste 11, the temperature is not higher than the melting temperature of the solder, and the thermosetting component 11B is not thermally cured for 5 seconds. The step of heating up to 60 seconds. By setting this step, the solder particles are concentrated on The action between the first electrode and the second electrode is further improved, and the pores which may be generated between the first connection member and the second connection member can be suppressed.

於本實施形態中,於上述第2步驟及上述第3步驟中不進行加壓。於本實施形態中,係對導電糊11施加第2連接對象構件3之重量。因此,於形成連接部4時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。再者,若於上述第2步驟及上述第3步驟中之至少一者中進行加壓,則使焊料粒子聚集於第1電極與第2電極之間之作用受到阻礙。該情況係由本發明者等人所發現。 In the present embodiment, no pressurization is performed in the second step and the third step. In the present embodiment, the weight of the second connection member 3 is applied to the conductive paste 11. Therefore, when the connection portion 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Further, when pressurization is performed in at least one of the second step and the third step, the action of collecting the solder particles between the first electrode and the second electrode is inhibited. This situation was discovered by the inventors and the like.

如此而獲得圖1所示之連接構造體1。再者,上述第2步驟與上述第3步驟可連續進行。又,亦可於進行上述第2步驟後,將所獲得之第1連接對象構件2與導電糊11與第2連接對象構件3之積層體移動至加熱部,再進行上述第3步驟。為了進行上述加熱,可將上述積層體配置於加熱構件上,亦可將上述積層體配置於經加熱之空間內。 Thus, the connection structure 1 shown in Fig. 1 is obtained. Furthermore, the second step and the third step described above can be continuously performed. Further, after the second step, the obtained first connection member 2 and the laminated body of the conductive paste 11 and the second connection member 3 may be moved to the heating unit, and the third step may be performed. In order to perform the above heating, the laminated body may be disposed on the heating member, or the laminated body may be disposed in the heated space.

就進一步提高導通可靠性之觀點而言,較佳為獲得如下所述之連接構造體1、1X,即於連接構造體1、1X中,於沿第1電極2a、連接部4及第2電極3a之積層方向觀察第1電極2a與第2電極3a之互相對向之部分時,於第1電極2a與第2電極3a之互相對向部分之面積100%中之50%以上配置有連接部4、4X中之焊料部4A、4XA。 From the viewpoint of further improving the conduction reliability, it is preferable to obtain the connection structures 1 and 1X as follows, that is, in the connection structures 1 and 1X, along the first electrode 2a, the connection portion 4, and the second electrode. When the first electrode 2a and the second electrode 3a are opposed to each other in the direction of the lamination of the layer 3a, the connection portion is disposed at 50% or more of the area of the mutually opposing portions of the first electrode 2a and the second electrode 3a. 4, 4X solder parts 4A, 4XA.

上述第3步驟中之加熱溫度只要為焊料粒子之熔點以上及熱硬化性成分之硬化溫度以上,則並無特別限定。上述加熱溫度較佳為130℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 The heating temperature in the third step is not particularly limited as long as it is equal to or higher than the melting point of the solder particles and the curing temperature of the thermosetting component. The heating temperature is preferably 130 ° C or higher, more preferably 160 ° C or higher, and is preferably 450 ° C or lower, more preferably 250 ° C or lower, and still more preferably 200 ° C or lower.

上述預加熱步驟之溫度較佳為100℃以上,更佳為120℃以上,進而較佳為140℃以上,且較佳為未達160℃,更佳為150℃以下。 The temperature of the preheating step is preferably 100 ° C or more, more preferably 120 ° C or more, further preferably 140 ° C or more, and preferably less than 160 ° C, more preferably 150 ° C or less.

再者,上述第1連接對象構件具有至少1個第1電極即可。上述第1連接對象構件較佳為具有複數個第1電極。上述第2連接對象構件具 有至少1個第2電極即可。上述第2連接對象構件較佳為具有複數個第2電極。 Further, the first connection target member may have at least one first electrode. Preferably, the first connection target member has a plurality of first electrodes. The second connection object member There is at least one second electrode. Preferably, the second connection target member has a plurality of second electrodes.

上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、電容器及二極體等電子零件;以及樹脂膜、印刷基板、軟性印刷基板、軟性扁平電纜、剛性軟性基板、環氧玻璃基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as semiconductor wafers, capacitors, and diodes; and resin films, printed boards, flexible printed boards, flexible flat cables, rigid flexible substrates, and rings. Electronic components such as circuit boards such as an oxygen glass substrate and a glass substrate. The first and second connection target members are preferably electronic components.

較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。較佳為上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁平電纜及剛性軟性基板具有柔軟性較高、相對輕量之性質。於將導電膜用於此種連接對象構件之連接之情形時,有焊料粒子難以聚集於電極上之傾向。相對於此,於本發明中由於使用導電糊,故而即便使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板,亦可使焊料粒子有效率地聚集於電極上,而可充分提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可更有效地獲得因不進行加壓引起之電極間之導通可靠性之提高效果。上述第1、第2連接對象構件可為樹脂膜、軟性印刷基板或軟性扁平電纜,亦可為剛性軟性基板。 At least one of the first connection target member and the second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. Preferably, the second connection member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The resin film, the flexible printed circuit board, the flexible flat cable, and the rigid flexible substrate have high flexibility and relatively lightweight properties. When a conductive film is used for the connection of such a connection target member, there is a tendency that solder particles are less likely to accumulate on the electrode. On the other hand, in the present invention, since a conductive paste is used, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, solder particles can be efficiently collected on the electrodes, and the electrodes can be sufficiently increased. Continuity reliability. When a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, it is possible to more effectively obtain conduction between electrodes due to no pressurization as compared with the case of using other connection member such as a semiconductor wafer. Increased reliability. The first and second connection target members may be a resin film, a flexible printed circuit board, or a flexible flat cable, or may be a rigid flexible substrate.

作為設置於上述連接對象構件之電極,可列舉金電極、鎳電極、錫電極、鋁電極、銅電極、銀電極、鉬電極、SUS電極及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板或軟性扁平電纜之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極 之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有三價金屬元素之氧化銦及摻雜有三價金屬元素之氧化鋅等。作為上述三價金屬元素,可列舉Sn、Al及Ga等。 Examples of the electrode provided in the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, a SUS electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed circuit board or a flexible flat cable, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode or a tungsten electrode. Furthermore, the above electrode is an aluminum electrode In the case of the electrode, it may be an electrode formed only of aluminum, or an electrode having an aluminum layer on the surface layer of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.

上述第1電極與上述第2電極相對向之位置之上述連接部之距離D1較佳為3μm以上,更佳為5μm以上,且較佳為40μm以下,更佳為30μm以下。若上述距離D1為上述下限以上,則連接部與連接對象構件之連接可靠性進一步提高。若上述距離D1為上述上限以下,則於形成連接部時焊料粒子變得更容易聚集於電極上,電極間之導通可靠性進一步提高。又,就進一步提高電極間之導通可靠性之觀點而言,上述距離D1較佳為10μm以上,更佳為12μm以上。 The distance D1 of the connecting portion at a position where the first electrode and the second electrode face each other is preferably 3 μm or more, more preferably 5 μm or more, and is preferably 40 μm or less, and more preferably 30 μm or less. When the distance D1 is equal to or higher than the lower limit, the connection reliability between the connection portion and the connection target member is further improved. When the distance D1 is equal to or less than the above upper limit, the solder particles are more likely to accumulate on the electrode when the connection portion is formed, and the conduction reliability between the electrodes is further improved. Moreover, the distance D1 is preferably 10 μm or more, and more preferably 12 μm or more from the viewpoint of further improving the conduction reliability between the electrodes.

於上述連接部中,上述第1電極與上述第2電極相對向之部分之大小S1(例如,圖3(a)及圖4(a)之斜線部)較佳為上述第1電極與上述第2電極未對向之部分之大小S2(例如,圖3(a)及圖4(a)之點部)之2倍以上,更佳為10倍以上,且較佳為40倍以下,更佳為30倍以下。上述大小S1與上述大小S2係俯視連接構造體時之大小。上述大小S1係於俯視連接構造體時上述第1電極與上述第2電極重疊之區域之面積。上述大小S2係於俯視連接構造體時上述第1電極與上述第2電極未重疊之區域之面積。上述大小S2係自連接部整體之大小中去除上述大小S1而獲得之大小。 In the connection portion, the size S1 of the portion facing the first electrode and the second electrode (for example, the hatched portions in FIGS. 3(a) and 4(a)) is preferably the first electrode and the first portion. The size S2 of the portion where the two electrodes are not opposed (for example, the points of FIG. 3(a) and FIG. 4(a)) is twice or more, more preferably 10 times or more, and preferably 40 times or less, more preferably It is 30 times or less. The size S1 and the size S2 are the sizes when the structure is connected in a plan view. The size S1 is an area of a region where the first electrode overlaps the second electrode when the connection structure is viewed in plan. The size S2 is an area of a region where the first electrode and the second electrode do not overlap when the connection structure is viewed in plan. The size S2 is a size obtained by removing the size S1 from the size of the entire connecting portion.

其次,對連接構造體之變化例進行說明。 Next, a modification of the connection structure will be described.

圖3(a)及(b)表示作為變化例之連接構造體51。圖3(a)係俯視圖,圖3(b)係沿I-I線之剖視圖。 3(a) and 3(b) show a connection structure 51 as a modification. Fig. 3(a) is a plan view, and Fig. 3(b) is a cross-sectional view taken along line I-I.

如圖3(a)及(b)所示之連接構造體51般,連接部54較佳為具有角部C。於圖3(a)及(b)中,連接部54於主面方向上具有4個角部C。角部C例如為連接部54之兩條邊相交之部分。較佳為第1連接對象構件52於 角部C之內側具有位置對準用之第1電極52aa作為第1電極52a。較佳為第2連接對象構件53於角部C之內側具有位置對準用之第2電極53aa作為第2電極53a。若設置此種位置對準用之電極,則於焊料粒子聚集於位置對準用之第1電極52aa與位置對準用之第2電極53aa之間而互相接合時,可發揮作用以防止位置對準用之第1電極52aa與位置對準用之第2電極53aa之位置偏移、進而消除所產生之位置偏移(例如,本發明之實施形態之圖7(a)與本發明之實施形態不包括之形態之圖8(a)之差異)。因此,電極間之導通可靠性提高。 As in the connection structure 51 shown in FIGS. 3(a) and 3(b), the connecting portion 54 preferably has a corner portion C. In FIGS. 3(a) and 3(b), the connecting portion 54 has four corner portions C in the main surface direction. The corner portion C is, for example, a portion where the two sides of the connecting portion 54 intersect. Preferably, the first connection object member 52 is The first electrode 52aa for alignment is provided on the inner side of the corner portion C as the first electrode 52a. It is preferable that the second connection target member 53 has the second electrode 53aa for alignment on the inner side of the corner portion C as the second electrode 53a. When such an electrode for alignment is provided, when the solder particles are collected between the first electrode 52aa for alignment and the second electrode 53aa for alignment, they can function to prevent alignment. The positional deviation between the first electrode 52aa and the second electrode 53aa for alignment is eliminated, and the positional deviation generated thereby is eliminated (for example, FIG. 7(a) of the embodiment of the present invention and a form not included in the embodiment of the present invention. Figure 8 (a) difference). Therefore, the conduction reliability between the electrodes is improved.

於圖3(b)中,第1電極52a與第2電極53a包含1個以上之電極。第1電極52a與第2電極53a較佳為2根以上之具有梳形、鋸齒型、點或四角電極之面陣列之圖案之電極。於該情形時,第1電極52a與第2電極53a之圖案較佳為於相對向之情形時圖案一致。於為2根以上之電極之情形時,電極之間距較佳為75μm以上,更佳為100μm以上,且較佳為2mm以下,更佳為1mm以下。電極之長度較佳為200μm以上,更佳為1mm以上,且較佳為5mm以下,更佳為3mm以下。 In FIG. 3(b), the first electrode 52a and the second electrode 53a include one or more electrodes. The first electrode 52a and the second electrode 53a are preferably two or more electrodes having a pattern of a face array of comb-shaped, zigzag-shaped, dot or four-corner electrodes. In this case, the pattern of the first electrode 52a and the second electrode 53a is preferably such that the patterns coincide with each other. In the case of two or more electrodes, the distance between the electrodes is preferably 75 μm or more, more preferably 100 μm or more, and is preferably 2 mm or less, more preferably 1 mm or less. The length of the electrode is preferably 200 μm or more, more preferably 1 mm or more, and is preferably 5 mm or less, more preferably 3 mm or less.

再者,於圖3(a)及(b)中,第2連接對象構件53之一部分區域重疊於第1連接對象構件52。於第1連接對象構件52與第2連接對象構件53之重疊部分之中央區域,利用焊料部54A進行電性連接之第1電極52a(主電極)與第2電極53a(主電極)以相對向之方式配置。於圖3(a)中,於對應於第2連接對象構件53前端之2個角部之連接部54之2個角部C附近,2個位置對準用之第1電極52aa與2個位置對準用之第2電極53aa以相對向之方式配置。位置對準用之第1電極52aa與位置對準用之第2電極53aa利用焊料部54A進行電性連接。硬化物部54B位於焊料部54A周圍。 Further, in FIGS. 3(a) and 3(b), a partial region of the second connection target member 53 is superposed on the first connection target member 52. The first electrode 52a (main electrode) and the second electrode 53a (main electrode) that are electrically connected by the solder portion 54A are opposed to each other in the central region of the overlapping portion between the first connection target member 52 and the second connection target member 53. The way it is configured. In Fig. 3(a), in the vicinity of the two corner portions C of the connecting portion 54 corresponding to the two corner portions of the distal end of the second connecting member 53, two first electrodes 52aa for alignment and two position pairs are provided. The second electrode 53aa to be used is disposed to face each other. The first electrode 52aa for alignment and the second electrode 53aa for alignment are electrically connected by the solder portion 54A. The cured portion 54B is located around the solder portion 54A.

第1電極52aa與第2電極53aa之尺寸係一邊較佳為300μm以上、更佳為500μm以上之四角形,第1電極52aa與第2電極53aa之形狀可為正 方形、長方形、圓形、橢圓形。 The size of the first electrode 52aa and the second electrode 53aa is preferably 300 μm or more, more preferably 500 μm or more, and the shape of the first electrode 52aa and the second electrode 53aa may be positive. Square, rectangular, round, oval.

第1電極52aa與第2電極53aa可僅用於對準,亦可用作需要較大電極面積之電源用之電極。 The first electrode 52aa and the second electrode 53aa can be used only for alignment, and can also be used as an electrode for a power source requiring a large electrode area.

就使位置對準更容易之觀點而言,上述位置對準用之第1電極及上述位置對準用之第2電極與上述角部之前端之最短距離較佳為75μm以上、3000μm以下。 The shortest distance between the first electrode for alignment and the second electrode for alignment and the front end of the corner is preferably 75 μm or more and 3000 μm or less from the viewpoint of facilitating alignment.

圖4(a)及(b)表示作為變化例之連接構造體51X。圖4(a)係俯視圖,圖4(b)係沿I-I線之剖視圖,圖4(c)係沿II-II線之剖視圖。 4(a) and 4(b) show a connection structure 51X as a modification. 4(a) is a plan view, FIG. 4(b) is a cross-sectional view taken along line I-I, and FIG. 4(c) is a cross-sectional view taken along line II-II.

於圖4(a)及(b)中,於包括與第2連接對象構件53X前端之2個角部相對應之連接部54X之2個角部C及其餘2個角部C在內之4個角部C附近,4個位置對準用之第1電極52aa與4個位置對準用之第2電極53aa以相對向之方式配置。如上所述,亦可於4個角部C附近配置4個位置對準用之第1、第2電極52aa、53aa。位置對準用之第1電極52aa與位置對準用之第2電極53aa利用焊料部54XA進行電性連接。硬化物部54XB位於焊料部54XA周圍。 In FIGS. 4(a) and 4(b), the two corner portions C including the two corner portions of the distal end of the second connection member 53X and the other two corner portions C are included. In the vicinity of the corner portion C, the first electrode 52aa for alignment of the four positions and the second electrode 53aa for alignment of the four positions are disposed to face each other. As described above, the four first and second electrodes 52aa and 53aa for alignment may be disposed in the vicinity of the four corner portions C. The first electrode 52aa for alignment and the second electrode 53aa for alignment are electrically connected by the solder portion 54XA. The cured portion 54XB is located around the solder portion 54XA.

圖5(a)及(b)表示作為變化例之連接構造體51Y。圖5(a)係俯視圖,圖5(b)係沿I-I線之剖視圖。 5(a) and 5(b) show a connection structure 51Y as a modification. Fig. 5(a) is a plan view, and Fig. 5(b) is a cross-sectional view taken along line I-I.

於連接構造體51Y中,就抑制因對第1連接對象構件52Y與第2連接對象構件53Y進行加熱時之熱膨脹引起之上下電極間之位置偏移、使導通可靠性更良好之觀點而言,較佳為第1連接對象構件52Y具有複數個具有長度方向與寬度方向之第1主電極52ab作為第1電極52a,第2連接對象構件53Y具有複數個具有長度方向與寬度方向之第2主電極53ab作為第2電極53a,且於將第1主電極52ab之長度方向及寬度方向上之第1連接對象構件52Y之線膨脹率與第2主電極53ab之長度方向及寬度方向上之第2連接對象構件53Y之線膨脹率的差設為C(ppm/℃)、將形成連接部54Y時之上述導電糊之加熱溫度設為T(℃)、將第1 主電極52ab之寬度方向上複數個第1主電極52ab整體之尺寸設為Yt(mm)、將複數個第1主電極52ab之每個電極於寬度方向上之尺寸設為Ya(mm)時,滿足式:C×T/1000000×Yt<0.5×Ya。 In the connection structure 51Y, the positional displacement between the upper and lower electrodes caused by thermal expansion when the first connection member 52Y and the second connection target member 53Y are heated is suppressed, and the conduction reliability is further improved. It is preferable that the first connection target member 52Y has a plurality of first main electrodes 52ab having a longitudinal direction and a width direction as the first electrode 52a, and the second connection target member 53Y has a plurality of second main electrodes having a longitudinal direction and a width direction. 53ab is the second electrode 53a, and the second expansion ratio of the first connection target member 52Y in the longitudinal direction and the width direction of the first main electrode 52ab is the second connection in the longitudinal direction and the width direction of the second main electrode 53ab. The difference in linear expansion coefficient of the target member 53Y is C (ppm/° C.), and the heating temperature of the conductive paste when the connecting portion 54Y is formed is T (° C.), and the first When the size of the entire plurality of first main electrodes 52ab in the width direction of the main electrode 52ab is Yt (mm), and the size of each of the plurality of first main electrodes 52ab in the width direction is Ya (mm), Satisfaction formula: C × T / 1000000 × Yt < 0.5 × Ya.

複數個第1主電極52ab隔開特定間隔,以長度方向平行之方式並列配置。複數個第2主電極53ab隔開特定間隔,以長度方向平行之方式並列配置。 The plurality of first main electrodes 52ab are arranged in parallel at a predetermined interval so as to be parallel in the longitudinal direction. The plurality of second main electrodes 53ab are arranged in parallel at a predetermined interval so as to be parallel in the longitudinal direction.

第1連接對象構件52Y具有位置對準用之第1電極52aa。第2連接對象構件53Y具有位置對準用之第2電極53aa。第1主電極52ab不包含位置對準用之第1電極52aa。第2主電極53ab不包含位置對準用之第2電極53aa。 The first connection target member 52Y has the first electrode 52aa for alignment. The second connection target member 53Y has the second electrode 53aa for alignment. The first main electrode 52ab does not include the first electrode 52aa for alignment. The second main electrode 53ab does not include the second electrode 53aa for alignment.

第1主電極52ab與第2主電極53ab利用焊料部54YA進行電性連接。硬化物部54YB位於焊料部54YA周圍。 The first main electrode 52ab and the second main electrode 53ab are electrically connected by the solder portion 54YA. The cured portion 54YB is located around the solder portion 54YA.

上述線膨脹率係使用TMA/SS6100(SII公司製造),於升溫速度5℃/min、自25℃至形成上述連接部時之上述導電糊之加熱溫度之溫度範圍的條件下進行測定。上述線膨脹率係作為上述溫度範圍條件下之平均值而求出。 The linear expansion ratio was measured under the conditions of a temperature range of 5 ° C/min at a temperature increase rate of 5 ° C/min and a heating temperature of the conductive paste when the connection portion was formed. The above linear expansion ratio is obtained as an average value under the above temperature range conditions.

為了將焊料粒子有效率地配置於電極上,上述導電糊於25℃下之黏度較佳為10Pa‧s以上,更佳為50Pa‧s以上,進而較佳為100Pa‧s以上,且較佳為800Pa‧s以下,更佳為600Pa‧s以下,進而較佳為500Pa‧s以下。 In order to efficiently dispose the solder particles on the electrode, the viscosity of the conductive paste at 25 ° C is preferably 10 Pa ‧ or more, more preferably 50 Pa ‧ s or more, further preferably 100 Pa ‧ or more, and preferably It is 800 Pa‧s or less, more preferably 600 Pa‧s or less, and further preferably 500 Pa‧s or less.

上述黏度可藉由調配成分之種類及調配量而適當調整。又,藉由使用填料,可使黏度相對較高。 The above viscosity can be appropriately adjusted by the type of the blending component and the blending amount. Also, by using a filler, the viscosity can be made relatively high.

上述黏度例如可使用E型黏度計(東機產業公司製造)等,於25℃及5rpm之條件下進行測定。 The viscosity can be measured, for example, at 25 ° C and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).

25℃以上、上述焊料粒子(焊料)之熔點℃以下之溫度範圍條件下之上述導電糊之黏度之最低值(最低熔融黏度之值)較佳為0.1Pa‧s以 上,更佳為0.2Pa‧s以上,且較佳為10Pa‧s以下,更佳為1Pa‧s以下。若上述黏度之最低值為上述下限以上及上述上限以下,則可將焊料粒子更有效率地配置於電極上。 The lowest value (the value of the lowest melt viscosity) of the conductive paste under the temperature range of 25 ° C or more and the melting point of the solder particles (solder) below C ° C is preferably 0.1 Pa ‧ More preferably, it is 0.2 Pa‧s or more, and is preferably 10 Pa‧s or less, more preferably 1 Pa‧s or less. When the lowest value of the viscosity is equal to or higher than the lower limit and equal to or lower than the upper limit, the solder particles can be more efficiently disposed on the electrode.

上述黏度之最低值可使用STRESSTECH(EOLOGICA公司製造)等,於應變控制1rad、頻率1Hz、升溫速度20℃/min、測定溫度範圍40~200℃(其中,於焊料粒子之熔點超過200℃之情形時將溫度上限設為焊料粒子之熔點)之條件下進行測定。根據測定結果,對焊料粒子之熔點℃以下之溫度範圍條件下之黏度之最低值進行評估。 The minimum value of the viscosity can be STRESSTECH (manufactured by EOLOGICA Co., Ltd.), strain control 1 rad, frequency 1 Hz, temperature increase rate 20 ° C / min, measurement temperature range 40 to 200 ° C (wherein the melting point of the solder particles exceeds 200 ° C) The measurement was carried out under the conditions that the upper limit of the temperature was set to the melting point of the solder particles. Based on the measurement results, the lowest value of the viscosity under the temperature range of the melting point of the solder particles below °C was evaluated.

上述導電糊含有熱硬化性成分與焊料粒子。上述熱硬化性成分較佳為含有可藉由加熱而硬化之硬化性化合物(熱硬化性化合物)、及熱硬化劑。上述導電糊較佳為含有助焊劑。上述導電糊較佳為含有填料。 The conductive paste contains a thermosetting component and solder particles. The thermosetting component preferably contains a curable compound (thermosetting compound) which can be cured by heating, and a thermosetting agent. The above conductive paste preferably contains a flux. The above conductive paste preferably contains a filler.

以下,對本發明之其他詳細內容進行說明。 Hereinafter, other details of the present invention will be described.

(焊料粒子) (solder particles)

上述焊料粒子於導電性之外表面具有焊料。關於上述焊料粒子,其中心部分及導電性之外表面均由焊料所形成。 The solder particles have solder on the outer surface of the conductive layer. Regarding the above solder particles, the central portion and the conductive outer surface are formed of solder.

上述焊料較佳為熔點為450℃以下之低熔點金屬。上述焊料粒子較佳為熔點為450℃以下之低熔點金屬粒子。上述低熔點金屬粒子係含有低熔點金屬之粒子。該所謂低熔點金屬表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述焊料粒子含有錫。於上述焊料粒子所含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述焊料粒子中之錫之含量為上述下限以上,則焊料部與電極之連接可靠性進一步提高。 The above solder is preferably a low melting point metal having a melting point of 450 ° C or less. The solder particles are preferably low melting point metal particles having a melting point of 450 ° C or lower. The low melting point metal particles are particles containing a low melting point metal. The so-called low melting point metal means a metal having a melting point of 450 ° C or lower. The melting point of the low melting point metal is preferably 300 ° C or lower, more preferably 160 ° C or lower. Further, the solder particles contain tin. The content of tin in the 100% by weight of the metal contained in the solder particles is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin in the solder particles is at least the above lower limit, the connection reliability between the solder portion and the electrode is further improved.

再者,上述錫之含量可使用高頻電感耦合電漿發射光譜分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島 津製作所公司製造之「EDX-800HS」)等進行測定。 Further, the content of the tin may be a high-frequency inductively coupled plasma emission spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (island). The measurement was carried out by "EDX-800HS" manufactured by Tsusho Corporation.

藉由使用上述焊料粒子,焊料熔融而與電極接合,焊料部使電極間導通。例如,由於焊料部與電極容易進行面接觸而非點接觸,因此連接電阻變低。又,藉由使用焊料粒子,焊料部與電極之接合強度變高,結果變得更難以產生焊料部與電極之剝離,導通可靠性及連接可靠性有效地提高。 By using the above-described solder particles, the solder is melted and bonded to the electrodes, and the solder portion electrically conducts between the electrodes. For example, since the solder portion and the electrode are easily in surface contact instead of point contact, the connection resistance becomes low. Moreover, by using the solder particles, the bonding strength between the solder portion and the electrode is increased, and as a result, peeling of the solder portion and the electrode is less likely to occur, and the conduction reliability and the connection reliability are effectively improved.

構成上述焊料粒子之低熔點金屬並無特別限定。該低熔點金屬較佳為錫、或含有錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。其中,就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 The low melting point metal constituting the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. Among them, the low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy in terms of excellent wettability of the electrode. More preferably, it is a tin-bismuth alloy or a tin-indium alloy.

基於JIS Z3001:焊接用語,上述焊料粒子較佳為液相線為450℃以下之熔填材料。作為上述焊料粒子之組成,例如可列舉含有鋅、金、銀、鉛、銅、錫、鉍、銦等之金屬組成。其中,較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料粒子較佳為不含鉛,且較佳為含有錫與銦、或含有錫與鉍。 The solder particles are preferably a filler material having a liquidus of 450 ° C or less, based on JIS Z3001: welding term. Examples of the composition of the solder particles include a metal composition containing zinc, gold, silver, lead, copper, tin, antimony, indium, or the like. Among them, a tin-indium-based (117 ° C eutectic) or a tin-lanthanide (139 ° C eutectic) having a low melting point and no lead is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium or tin and antimony.

為了進一步提高上述焊料部與電極之接合強度,上述焊料粒子亦可含有磷、碲、或鎳、銅、銻、鋁、鋅、鐵、金、鈦、鍺、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就進一步提高焊料部與電極之接合強度之觀點而言,上述焊料粒子較佳為含有鎳、銅、銻、鋁或鋅。就更進一步提高焊料部與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於焊料粒子100重量%中,較佳為0.0001重量%以上,且較佳為1重量%以下。 In order to further improve the bonding strength between the solder portion and the electrode, the solder particles may further contain phosphorus, antimony, or nickel, copper, bismuth, aluminum, zinc, iron, gold, titanium, lanthanum, cobalt, lanthanum, manganese, chromium, molybdenum. , palladium and other metals. Further, from the viewpoint of further improving the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, ruthenium, aluminum or zinc. The content of the metal for improving the bonding strength is preferably 0.0001% by weight or more, and preferably 1% by weight, based on 100% by weight of the solder particles, from the viewpoint of further improving the bonding strength between the solder portion and the electrode. the following.

上述焊料粒子之平均粒徑較佳為0.5μm以上,更佳為1μm以上,進而較佳為3μm以上,尤佳為5μm以上,且較佳為100μm以下,更 佳為40μm以下,進而較佳為30μm以下,進而更佳為20μm以下,尤佳為15μm以下,最佳為10μm以下。若上述焊料粒子之平均粒徑為上述下限以上及上述上限以下,則可將焊料粒子更有效率地配置於電極上。上述焊料粒子之平均粒徑尤佳為3μm以上、30μm以下。 The average particle diameter of the solder particles is preferably 0.5 μm or more, more preferably 1 μm or more, further preferably 3 μm or more, particularly preferably 5 μm or more, and more preferably 100 μm or less. It is preferably 40 μm or less, more preferably 30 μm or less, still more preferably 20 μm or less, still more preferably 15 μm or less, and most preferably 10 μm or less. When the average particle diameter of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode. The average particle diameter of the solder particles is preferably 3 μm or more and 30 μm or less.

上述焊料粒子之「平均粒徑」表示數量平均粒徑。焊料粒子之平均粒徑例如可藉由利用電子顯微鏡或光學顯微鏡觀察任意50個焊料粒子,計算出平均值而求出。 The "average particle diameter" of the above solder particles means a number average particle diameter. The average particle diameter of the solder particles can be determined, for example, by observing an arbitrary 50 solder particles by an electron microscope or an optical microscope and calculating an average value.

上述導電糊100重量%中,上述焊料粒子之含量較佳為1重量%以上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為50重量%以下。若上述焊料粒子之含量為上述下限以上及上述上限以下,則可將焊料粒子更有效率地配置於電極上,容易於電極間大量配置焊料粒子,導通可靠性進一步提高。就進一步提高導通可靠性之觀點而言,上述焊料粒子之含量較佳為較多。 The content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, still more preferably 20% by weight or more, and most preferably 30% by weight. The weight% or more is preferably 80% by weight or less, more preferably 60% by weight or less, still more preferably 50% by weight or less. When the content of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode, and a large amount of solder particles can be easily disposed between the electrodes, and the conduction reliability can be further improved. From the viewpoint of further improving the conduction reliability, the content of the above solder particles is preferably large.

(可藉由加熱而硬化之化合物:熱硬化性成分) (a compound that can be hardened by heating: a thermosetting component)

作為上述熱硬化性化合物,可列舉氧雜環丁烷化合物、環氧化合物、環硫化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。其中,就使導電糊之硬化性及黏度更良好,進一步提高連接可靠性之觀點而言,較佳為環氧化合物。 Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth)acrylic compound, a phenol compound, an amine compound, an unsaturated polyester compound, and a polyaminocarboxylic acid. An ester compound, a polyoxymethylene compound, a polyimine compound, or the like. Among them, an epoxy compound is preferred from the viewpoint of further improving the curing property and viscosity of the conductive paste and further improving the connection reliability.

上述導電糊100重量%中,上述熱硬化性化合物之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。就進一步提高耐衝擊性之觀點而言,上述熱硬化性成分之含量較佳為較多。 The content of the thermosetting compound in the 100% by weight of the conductive paste is preferably 20% by weight or more, more preferably 40% by weight or more, further preferably 50% by weight or more, and preferably 99% by weight or less. It is preferably 98% by weight or less, more preferably 90% by weight or less, and still more preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, the content of the thermosetting component is preferably large.

(熱硬化劑:熱硬化性成分) (thermosetting agent: thermosetting component)

上述熱硬化劑係使上述熱硬化性化合物進行熱硬化。作為上述熱硬化劑,可列舉咪唑硬化劑、胺硬化劑、酚系硬化劑、多硫醇硬化劑、酸酐、熱陽離子起始劑及熱自由基產生劑等。上述熱硬化劑可僅使用一種,亦可併用兩種以上。 The above-mentioned thermosetting agent thermally hardens the above-mentioned thermosetting compound. Examples of the above-mentioned thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generating agent. These thermosetting agents may be used alone or in combination of two or more.

其中,由於可於低溫下使導電糊更迅速地硬化,故而較佳為咪唑硬化劑、多硫醇硬化劑或胺硬化劑。又,由於將可藉由加熱而硬化之硬化性化合物與上述熱硬化劑加以混合時保存穩定性變高,故而較佳為潛伏性硬化劑。潛伏性硬化劑較佳為潛伏性咪唑硬化劑、潛伏性多硫醇硬化劑或潛伏性胺硬化劑。再者,上述熱硬化劑亦可由聚胺基甲酸酯樹脂或聚酯樹脂等高分子物質所被覆。 Among them, an imidazole hardener, a polythiol hardener or an amine hardener is preferred because the conductive paste can be hardened more rapidly at a low temperature. Further, since the storage stability is improved when the curable compound which can be cured by heating is mixed with the above-mentioned thermosetting agent, a latent curing agent is preferable. The latent hardener is preferably a latent imidazole hardener, a latent polythiol hardener or a latent amine hardener. Further, the above-mentioned thermosetting agent may be coated with a polymer material such as a polyurethane resin or a polyester resin.

作為上述咪唑硬化劑,並無特別限定,可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、偏苯三酸1-氰乙基-2-苯基咪唑鎓鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三異三聚氰酸加成物等。 The imidazole curing agent is not particularly limited, and examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and trimellitic acid 1-cyanide. Ethyl-2-phenylimidazolium salt, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three And 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three An isocyanuric acid addition product or the like.

作為上述多硫醇硬化劑,並無特別限定,可列舉:三羥甲基丙烷三(3-巰基丙酸酯)、季戊四醇四(3-巰基丙酸酯)及二季戊四醇六(3-巰基丙酸酯)等。 The polythiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptopropionate), and dipentaerythritol hexa(3-mercaptopropane). Acid ester) and the like.

上述多硫醇硬化劑之溶解度參數較佳為9.5以上,且較佳為12以下。上述溶解度參數係藉由Fedors法進行計算。例如,三羥甲基丙烷三(3-巰基丙酸酯)之溶解度參數為9.6,二季戊四醇六(3-巰基丙酸酯)之溶解度參數為11.4。 The solubility parameter of the above-mentioned polythiol hardener is preferably 9.5 or more, and preferably 12 or less. The above solubility parameters are calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tris(3-mercaptopropionate) is 9.6, and the solubility parameter of dipentaerythritol hexa(3-mercaptopropionate) is 11.4.

作為上述胺硬化劑,並無特別限定,可列舉:己二胺、辛二胺、癸二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 The amine curing agent is not particularly limited, and examples thereof include hexamethylenediamine, octanediamine, decanediamine, and 3,9-bis(3-aminopropyl)-2,4,8,10-tetraro [5.5] Undecane, bis(4-aminocyclohexyl)methane, m-phenylenediamine, and diaminodiphenylphosphonium.

作為上述熱陽離子硬化劑,可列舉錪系陽離子硬化劑、氧鎓系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑, 可列舉六氟磷酸雙(4-第三丁基苯基)錪等。作為上述氧鎓系陽離子硬化劑,可列舉四氟硼酸三甲基氧鎓等。作為上述鋶系陽離子硬化劑,可列舉六氟磷酸三(對甲苯基)鋶等。 Examples of the thermal cation hardening agent include a lanthanoid cation curing agent, an oxonium cation curing agent, and a lanthanoid cation curing agent. As the above-mentioned lanthanide cationic hardener, A bis(4-t-butylphenyl) ruthenium hexafluorophosphate etc. are mentioned. Examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate. Examples of the ruthenium-based cation hardener include tris(p-tolyl)phosphonium hexafluorophosphate.

作為上述熱自由基產生劑,並無特別限定,可列舉偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉偶氮二異丁腈(AIBN)等。作為上述有機過氧化物,可列舉過氧化二第三丁基及過氧化甲基乙基酮等。 The thermal radical generating agent is not particularly limited, and examples thereof include an azo compound and an organic peroxide. Examples of the azo compound include azobisisobutyronitrile (AIBN) and the like. Examples of the organic peroxide include ditributyl peroxide and methyl ethyl ketone peroxide.

上述熱硬化劑之反應起始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下。若上述熱硬化劑之反應起始溫度為上述下限以上及上述上限以下,則可將焊料粒子更有效率地配置於電極上。上述熱硬化劑之反應起始溫度尤佳為80℃以上、140℃以下。 The reaction initiation temperature of the above-mentioned thermosetting agent is preferably 50 ° C or more, more preferably 70 ° C or more, further preferably 80 ° C or more, and preferably 250 ° C or less, more preferably 200 ° C or less, and further preferably Below 150 ° C, particularly preferably below 140 ° C. When the reaction initiation temperature of the thermal curing agent is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode. The reaction initiation temperature of the above-mentioned thermosetting agent is particularly preferably 80 ° C or more and 140 ° C or less.

就將焊料更有效率地配置於電極上之觀點而言,較佳為上述熱硬化劑之反應起始溫度低於上述焊料粒子中之焊料之熔點,更佳為低5℃以上,進而較佳為低10℃以上。 From the viewpoint of more efficiently disposing the solder on the electrode, it is preferred that the reaction initiation temperature of the above-mentioned thermosetting agent is lower than the melting point of the solder in the solder particles, more preferably 5 ° C or more, and further preferably It is 10 ° C or lower.

上述熱硬化劑之反應起始溫度意指DSC(differential scanning calorimetry,示差掃描熱量測定)中之放熱峰開始上升之溫度。 The reaction initiation temperature of the above-mentioned thermosetting agent means a temperature at which an exothermic peak in DSC (differential scanning calorimetry) starts to rise.

上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電糊充分硬化。若熱硬化劑之含量為上述上限以下,則於硬化後不易殘存未參與硬化之多餘之熱硬化劑,且硬化物之耐熱性進一步提高。 The content of the above-mentioned thermosetting agent is not particularly limited. The content of the above-mentioned thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably 100 parts by weight or less, based on 100 parts by weight of the thermosetting compound. Further, it is preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, the conductive paste is easily sufficiently cured. When the content of the thermosetting agent is at most the above upper limit, it is less likely to remain unnecessary after curing, and the heat resistance of the cured product is further improved.

(助焊劑) (flux)

上述導電糊較佳為含有助焊劑。藉由使用助焊劑,可將焊料更有效地配置於電極上。該助焊劑並無特別限定。作為助焊劑,可使用通常用於焊接等之助焊劑。作為上述助焊劑,例如可列舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔融鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用一種,亦可併用兩種以上。 The above conductive paste preferably contains a flux. By using a flux, the solder can be more efficiently disposed on the electrode. The flux is not particularly limited. As the flux, a flux which is usually used for soldering or the like can be used. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, a phosphoric acid, a derivative of phosphoric acid, an organic halide, an anthracene, and an organic acid. And turpentine and so on. The flux may be used singly or in combination of two or more.

作為上述熔融鹽,可列舉氯化銨等。作為上述有機酸,可列舉乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉活化松脂及非活化松脂等。上述助焊劑較佳為具有2個以上羧基之有機酸、松脂。上述助焊劑可為具有2個以上羧基之有機酸,亦可為松脂。藉由使用具有2個以上羧基之有機酸、松脂,電極間之導通可靠性進一步提高。 Examples of the molten salt include ammonium chloride and the like. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the rosin include activated rosin and non-activated rosin. The flux is preferably an organic acid or rosin having two or more carboxyl groups. The flux may be an organic acid having two or more carboxyl groups or a rosin. By using an organic acid or rosin having two or more carboxyl groups, the conduction reliability between the electrodes is further improved.

上述松脂係以松香酸為主成分之松香類。助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,電極間之導通可靠性進一步提高。 The above rosin is a rosin mainly composed of rosin acid. The flux is preferably rosin, more preferably rosin acid. By using the preferred flux, the conduction reliability between the electrodes is further improved.

上述助焊劑之熔點較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為160℃以下,進而較佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之熔點為上述下限以上及上述上限以下,則更有效地發揮出助焊劑效果,而可將焊料粒子更有效率地配置於電極上。上述助焊劑之熔點較佳為80℃以上、190℃以下。上述助焊劑之熔點尤佳為80℃以上、140℃以下。 The melting point of the flux is preferably 50 ° C or higher, more preferably 70 ° C or higher, further preferably 80 ° C or higher, and more preferably 200 ° C or lower, more preferably 160 ° C or lower, and still more preferably 150 ° C or lower. More preferably, it is 140 ° C or less. When the melting point of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited, and the solder particles can be more efficiently disposed on the electrode. The melting point of the above flux is preferably 80 ° C or more and 190 ° C or less. The melting point of the above flux is particularly preferably 80 ° C or more and 140 ° C or less.

作為熔點為80℃以上、190℃以下之上述助焊劑,可列舉:琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸;苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 Examples of the flux having a melting point of 80 ° C or more and 190 ° C or less include succinic acid (melting point 186 ° C), glutaric acid (melting point 96 ° C), adipic acid (melting point 152 ° C), and pimelic acid (melting point 104). °C), dicarboxylic acid such as suberic acid (melting point 142 ° C); benzoic acid (melting point 122 ° C), malic acid (melting point 130 ° C) and the like.

又,上述助焊劑之沸點較佳為200℃以下。 Further, the flux has a boiling point of preferably 200 ° C or lower.

就將焊料更有效率地配置於電極上之觀點而言,較佳為上述助焊劑之熔點低於上述焊料粒子中之焊料之熔點,更佳為低5℃以上,進而較佳為低10℃以上。 From the viewpoint of more efficiently disposing the solder on the electrode, it is preferable that the melting point of the flux is lower than the melting point of the solder in the solder particles, more preferably 5 ° C or more, and further preferably 10 ° C lower. the above.

就將焊料更有效率地配置於電極上之觀點而言,較佳為上述助焊劑之熔點低於上述熱硬化劑之反應起始溫度,更佳為低5℃以上,進而較佳為低10℃以上。 From the viewpoint of more efficiently disposing the solder on the electrode, it is preferred that the melting point of the flux is lower than the reaction starting temperature of the thermal curing agent, more preferably 5 ° C or more, and even more preferably 10 lower. Above °C.

上述助焊劑可分散於導電糊中,亦可附著於焊料粒子之表面上。 The flux may be dispersed in the conductive paste or attached to the surface of the solder particles.

上述導電糊100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。上述導電糊亦可不含助焊劑。若助焊劑之含量為上述下限以上及上述上限以下,則於焊料及電極之表面變得更難以形成氧化覆膜,進而可更有效地去除於焊料及電極之表面所形成之氧化覆膜。 The content of the flux in 100% by weight of the conductive paste is preferably 0.5% by weight or more, and preferably 30% by weight or less, more preferably 25% by weight or less. The above conductive paste may also contain no flux. When the content of the flux is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode can be more effectively removed.

(填料) (filler)

上述導電糊較佳為含有填料。藉由使用填料,可抑制導電糊之硬化物之潛熱膨脹。上述填料可僅使用一種,亦可併用兩種以上。 The above conductive paste preferably contains a filler. By using a filler, the latent heat expansion of the cured product of the conductive paste can be suppressed. These fillers may be used alone or in combination of two or more.

作為上述填料,可列舉二氧化矽、滑石、氮化鋁及氧化鋁等無機填料等。上述填料可為有機填料,亦可為有機-無機複合填料。上述填料可僅使用一種,亦可併用兩種以上。 Examples of the filler include inorganic fillers such as cerium oxide, talc, aluminum nitride, and aluminum oxide. The above filler may be an organic filler or an organic-inorganic composite filler. These fillers may be used alone or in combination of two or more.

較佳為上述導電糊及上述填料分別含有無機填料。藉由使用無機填料,可將導電糊之比重及觸變性控制為更佳之範圍,焊料粒子之沈澱受到進一步抑制,連接構造體之導通可靠性進一步提高。 Preferably, the conductive paste and the filler each contain an inorganic filler. By using an inorganic filler, the specific gravity and thixotropy of the conductive paste can be controlled to a better range, the precipitation of the solder particles is further suppressed, and the conduction reliability of the bonded structure is further improved.

較佳為上述導電糊及上述填料分別含有二氧化矽。該二氧化矽為二氧化矽填料。藉由使用二氧化矽,可將導電糊之比重及觸變性控制為更佳之範圍,焊料粒子之沈澱受到進一步抑制,連接構造體之導通可靠性進一步提高。 Preferably, the conductive paste and the filler each contain cerium oxide. The cerium oxide is a cerium oxide filler. By using cerium oxide, the specific gravity and thixotropy of the conductive paste can be controlled to a better range, the precipitation of the solder particles is further suppressed, and the conduction reliability of the bonded structure is further improved.

上述導電糊100重量%中,上述填料之含量較佳為2重量%以上,更佳為5重量%以上,且較佳為60重量%以下,更佳為50重量%以下。若上述填料之含量為上述下限以上及上述上限以下,則可將焊料粒子更有效率地配置於電極上。 The content of the filler in 100% by weight of the conductive paste is preferably 2% by weight or more, more preferably 5% by weight or more, and is preferably 60% by weight or less, more preferably 50% by weight or less. When the content of the filler is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode.

(其他成分) (other ingredients)

上述導電糊亦可視需要含有例如填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 The conductive paste may also contain, for example, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a hardening catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, a UV absorber, and a lubricant. Various additives such as antistatic agents and flame retardants.

以下,列舉實施例及比較例對本發明進行具體說明。本發明並不僅限定於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

聚合物A:雙酚F與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之反應物(聚合物A)之合成:將雙酚F(以重量比計以2:3:1含有4,4'-亞甲基雙酚、2,4'-亞甲基雙酚及2,2'-亞甲基雙酚)72重量份、1,6-己二醇二縮水甘油醚70重量份、雙酚F型環氧樹脂(DIC公司製造之「EPICLON EXA-830CRP」)30重量份裝入三口燒瓶中,於氮氣流動下,於150℃下使其溶解。其後,添加作為羥基與環氧基之加成反應觸媒之溴化四正丁基鋶0.1重量份,於氮氣流動下,於150℃下進行6小時之加成聚合反應,藉此獲得反應物(聚合物A)。 Polymer A: Synthesis of a reaction of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F-type epoxy resin (Polymer A): bisphenol F (by weight ratio 2 :3:1 contains 4,4'-methylene bisphenol, 2,4'-methylene bisphenol and 2,2'-methylene bisphenol) 72 parts by weight, 1,6-hexanediol II 30 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F-type epoxy resin ("EPICLON EXA-830CRP" manufactured by DIC Corporation) were placed in a three-necked flask, and dissolved at 150 ° C under a nitrogen gas flow. Thereafter, 0.1 part by weight of tetra-n-butyl bromide as an addition reaction catalyst of a hydroxyl group and an epoxy group was added, and an addition polymerization reaction was carried out at 150 ° C for 6 hours under a nitrogen gas flow to obtain a reaction. (Polymer A).

藉由NMR(nuclear magnetic resonance,核磁共振),確認到已進行加成聚合反應,且確認到反應物(聚合物A)於主鏈上具有源自雙酚F之羥基與1,6-己二醇二縮水甘油醚及雙酚F型環氧樹脂之環氧基鍵結而成之結構單元,且於兩末端具有環氧基。 It was confirmed by NMR (nuclear magnetic resonance) that the addition polymerization reaction was carried out, and it was confirmed that the reactant (polymer A) had a hydroxyl group derived from bisphenol F and 1,6-hexane in the main chain. A structural unit in which an epoxy group of an alcohol diglycidyl ether and a bisphenol F type epoxy resin are bonded and has an epoxy group at both ends.

藉由GPC(gel permeation chromatography,凝膠滲透層析法)而獲得之反應物(聚合物A)之重量平均分子量為10000,數量平均分子量為 3500。 The weight average molecular weight of the reactant (polymer A) obtained by GPC (gel permeation chromatography) is 10,000, and the number average molecular weight is 3500.

聚合物B:兩末端環氧基剛性骨架苯氧基樹脂,三菱化學公司製造之「YX6900BH45」,重量平均分子量16000 Polymer B: two-terminal epoxy-based rigid skeleton phenoxy resin, "YX6900BH45" manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000

熱硬化性化合物1:間苯二酚型環氧化合物,Nagase chemteX公司製造之「EX-201」 Thermosetting compound 1: Resorcinol type epoxy compound, "EX-201" manufactured by Nagase ChemteX

熱硬化性化合物2:萘型環氧化合物,DIC公司製造之「HP-4032D」 Thermosetting compound 2: naphthalene type epoxy compound, "HP-4032D" manufactured by DIC Corporation

熱硬化性化合物3:雙酚F型環氧樹脂,DIC公司製造之「EVA-830CRP」 Thermosetting compound 3: bisphenol F type epoxy resin, "EVA-830CRP" manufactured by DIC Corporation

熱硬化劑:季戊四醇四(3-巰基丁酸酯),昭和電工公司製造之「Karenz MT PE1」 Thermal hardener: pentaerythritol tetrakis(3-mercaptobutyrate), "Karenz MT PE1" manufactured by Showa Denko

助焊劑:戊二酸,和光純藥工業公司製造 Flux: glutaric acid, manufactured by Wako Pure Chemical Industries Co., Ltd.

潛伏性環氧熱硬化劑:T&K TOKA公司製造之「Fujicure 7000」 Latent epoxy heat hardener: "Fujicure 7000" manufactured by T&K TOKA

潛伏性熱硬化劑:微膠囊型,旭化成E-MATERIALS公司製造之「HXA-3932HP」 Latent heat hardener: Microcapsule type, "HXA-3932HP" manufactured by Asahi Kasei E-MATERIALS

焊料粒子1(Sn-58Bi焊料粒子,熔點139℃,三井金屬礦業公司製造之「DS10-25」,平均粒徑10μm) Solder particles 1 (Sn-58Bi solder particles, melting point 139 ° C, "DS10-25" manufactured by Mitsui Mining Co., Ltd., average particle size 10 μm)

焊料粒子2(Sn-58Bi焊料粒子,熔點139℃,三井金屬礦業公司製造之「10-25」,平均粒徑20μm) Solder particles 2 (Sn-58Bi solder particles, melting point 139 ° C, "10-25" manufactured by Mitsui Mining & Mining Co., Ltd., average particle size 20 μm)

焊料粒子3(Sn-58Bi焊料粒子,熔點139℃,三井金屬礦業公司製造之「DS20-38」,平均粒徑29μm) Solder particles 3 (Sn-58Bi solder particles, melting point 139 ° C, "DS20-38" manufactured by Mitsui Mining Co., Ltd., average particle size 29 μm)

焊料粒子4(Sn-58Bi焊料粒子,熔點139℃,平均粒徑45μm,篩選品) Solder particles 4 (Sn-58Bi solder particles, melting point 139 ° C, average particle size 45 μm, screening product)

導電性粒子1:於樹脂粒子之表面上形成有厚度1μm之銅層,且於該銅層之表面形成有厚度3μm之焊料層(錫:鉍=43重量%:57重量%)之導電性粒子 Conductive particle 1 : A copper layer having a thickness of 1 μm was formed on the surface of the resin particle, and a conductive layer having a thickness of 3 μm (tin: 铋 = 43% by weight: 57% by weight) was formed on the surface of the copper layer.

導電性粒子1之製作方法:對平均粒徑10μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-210」)進行無電解鍍鎳,而於樹脂粒子之表面上形成厚度0.1μm之基底鍍鎳層。繼而,對形成有基底鍍鎳層之樹脂粒子進行電解鍍銅,而形成厚度1μm之銅層。進而,使用含有錫及鉍之電鍍液進行電鍍,從而形成厚度3μm之焊料層。以上述方式,製作於樹脂粒子之表面上形成有厚度1μm之銅層,且於該銅層之表面形成有厚度3μm之焊料層(錫:鉍=43重量%:57重量%)之導電性粒子1。 In the method of producing the conductive particles 1, electroless nickel plating is performed on divinylbenzene resin particles ("Micropearl SP-210" manufactured by Sekisui Chemical Co., Ltd.) having an average particle diameter of 10 μm, and a thickness of 0.1 is formed on the surface of the resin particles. The base of μm is plated with nickel. Then, the resin particles on which the underlying nickel plating layer was formed were subjected to electrolytic copper plating to form a copper layer having a thickness of 1 μm. Further, electroplating using a plating solution containing tin and antimony was carried out to form a solder layer having a thickness of 3 μm. In the above manner, a copper layer having a thickness of 1 μm was formed on the surface of the resin particle, and a conductive layer having a thickness of 3 μm (tin: 铋 = 43% by weight: 57% by weight) was formed on the surface of the copper layer. 1.

苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」) Phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.)

(實施例1~4) (Examples 1 to 4)

(1)各向異性導電糊之製作 (1) Production of anisotropic conductive paste

以下述表1所示之調配量調配下述表1所示之成分,而獲得各向異性導電糊。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste.

(2)第1連接構造體(L/S=50μm/50μm)之製作 (2) Production of the first connection structure (L/S = 50 μm / 50 μm)

準備上表面具有L/S為50μm/50μm之銅電極圖案(銅電極厚度10 μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件,線膨脹率12ppm/℃(第1主電極之長度方向及寬度方向上之線膨脹率(以下相同)))。又,準備L/S為50μm/50μm之下表面具有銅電極圖案(銅電極厚度10μm)之軟性印刷基板(第2連接對象構件,線膨脹率16ppm/℃(第2主電極之長度方向及寬度方向上之線膨脹率(以下相同)))。關於第1主電極,Yt=10mm,Ya=0.05mm。 Prepare a copper electrode pattern with an L/S of 50 μm/50 μm on the upper surface (copper electrode thickness 10) The epoxy glass substrate (FR-4 substrate) of the μm) (the first connection member, the coefficient of linear expansion is 12 ppm/° C. (the linear expansion ratio in the longitudinal direction and the width direction of the first main electrode (the same applies hereinafter)). In addition, a flexible printed circuit board having a copper electrode pattern (copper electrode thickness: 10 μm) on the surface of L/S of 50 μm/50 μm is prepared (the second connection member has a linear expansion ratio of 16 ppm/° C. (longitudinal direction and width of the second main electrode) The linear expansion ratio in the direction (the same below))). Regarding the first main electrode, Yt = 10 mm and Ya = 0.05 mm.

環氧玻璃基板與軟性印刷基板之重疊面積係設為1.5cm×4mm,連接之電極數係設為100對。使用位置對準用之電極(合計4個)分別位於所獲得之第1連接構造體中之連接部之4個角部內側之環氧玻璃基板與軟性印刷基板。位置對準用之第1、第2電極與4個角部之前端之最短距離為500μm。 The overlapping area of the epoxy glass substrate and the flexible printed circuit board was set to 1.5 cm × 4 mm, and the number of connected electrodes was set to 100 pairs. The electrode for alignment (four in total) is placed on the inside of the four corners of the connection portion of the obtained first connection structure, and the flexible printed circuit board. The shortest distance between the first and second electrodes for alignment and the front ends of the four corners was 500 μm.

以厚度成為50μm之方式將剛製作後之各向異性導電糊塗佈於上述環氧玻璃基板之上表面,從而形成各向異性導電糊層。其次,以電極彼此相對向之方式將上述軟性印刷基板積層於各向異性導電糊層之上表面。此時,不進行加壓。上述軟性印刷基板之重量係施加於各向異性導電糊層。其後,一面以各向異性導電糊層之溫度成為185℃之方式進行加熱,一面使焊料熔融,且於185℃下使各向異性導電糊層硬化,從而獲得第1連接構造體。 The anisotropic conductive paste immediately after the production was applied to the upper surface of the above-mentioned epoxy glass substrate so as to have a thickness of 50 μm to form an anisotropic conductive paste layer. Next, the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressurization is performed. The weight of the above flexible printed substrate is applied to the anisotropic conductive paste layer. Then, while the temperature of the anisotropic conductive paste layer was 185 ° C, the solder was melted, and the anisotropic conductive paste layer was cured at 185 ° C to obtain a first bonded structure.

(3)第2連接構造體(L/S=75μm/75μm)之製作 (3) Production of the second connection structure (L/S = 75 μm / 75 μm)

準備上表面具有L/S為75μm/75μm之銅電極圖案(銅電極厚度10μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件,線膨脹率12ppm/℃)。又,準備下表面具有L/S為75μm/75μm之銅電極圖案(銅電極厚度10μm)之軟性印刷基板(第2連接對象構件,線膨脹率16ppm/℃)。關於第1主電極,Yt=10mm,Ya=0.075mm。 An epoxy glass substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness: 10 μm) having an L/S of 75 μm/75 μm (the first connection member, a linear expansion ratio of 12 ppm/° C.) was prepared. Further, a flexible printed circuit board having a copper electrode pattern (copper electrode thickness: 10 μm) having an L/S of 75 μm/75 μm (a second connection member, a linear expansion ratio of 16 ppm/° C.) was prepared. Regarding the first main electrode, Yt = 10 mm and Ya = 0.075 mm.

環氧玻璃基板與軟性印刷基板之重疊面積係設為1.5cm×4mm,連接之電極數係設為67對。除使用L/S不同之上述環氧玻璃基板及軟 性印刷基板以外,以與第1連接構造體之製作相同之方式,獲得第2連接構造體。 The overlapping area of the epoxy glass substrate and the flexible printed circuit board was set to 1.5 cm × 4 mm, and the number of connected electrodes was set to 67 pairs. In addition to using L/S different epoxy glass substrates and soft The second connection structure is obtained in the same manner as the production of the first connection structure except for the printed circuit board.

(4)第3連接構造體(L/S=100μm/100μm)之製作 (4) Production of the third connection structure (L/S = 100 μm / 100 μm)

準備上表面具有L/S為100μm/100μm之銅電極圖案(銅電極厚度10μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件,線膨脹率12ppm/℃)。又,準備下表面具有L/S為100μm/100μm之銅電極圖案(銅電極厚度10μm)之軟性印刷基板(第2連接對象構件,線膨脹率16ppm/℃)。關於第1主電極,Yt=10mm,Ya=0.1mm。 An epoxy glass substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness: 10 μm) having an L/S of 100 μm/100 μm on the upper surface (first connection member, linear expansion ratio: 12 ppm/° C.) was prepared. Further, a flexible printed circuit board having a copper electrode pattern (copper electrode thickness: 10 μm) having an L/S of 100 μm/100 μm on the lower surface (second connection member, linear expansion ratio: 16 ppm/° C.) was prepared. Regarding the first main electrode, Yt = 10 mm and Ya = 0.1 mm.

環氧玻璃基板與軟性印刷基板之重疊面積係設為1.5cm×4mm,連接之電極數係設為50對。 The overlapping area of the epoxy glass substrate and the flexible printed circuit board was set to 1.5 cm × 4 mm, and the number of connected electrodes was set to 50 pairs.

除使用L/S不同之上述環氧玻璃基板及軟性印刷基板以外,以與第1連接構造體之製作相同之方式,獲得第3連接構造體。 The third connection structure was obtained in the same manner as the production of the first connection structure except that the above-described epoxy glass substrate and flexible printed circuit board having different L/S were used.

(實施例5) (Example 5)

將第1連接構造體之電極數設為75對,將第2連接構造體之電極數設為50對,將第3連接構造體之電極數設為38對,除此以外,以與實施例1相同之方式獲得連接構造體。 The number of electrodes of the first connection structure is 75 pairs, the number of electrodes of the second connection structure is 50 pairs, and the number of electrodes of the third connection structure is 38 pairs, and other examples are given. 1 The connection structure is obtained in the same manner.

第1主電極之Yt及Ya如以下所述。 Yt and Ya of the first main electrode are as follows.

第1、第2、第3連接構造體:Yt=7.5mm First, second, and third connection structures: Yt = 7.5 mm

第1連接構造體:Ya=0.05mm First connection structure: Ya=0.05mm

第2連接構造體:Ya=0.075mm Second connection structure: Ya=0.075mm

第3連接構造體:Ya=0.1mm Third connection structure: Ya=0.1mm

(實施例6) (Example 6)

使用不具備位置對準電極之環氧玻璃基板與不具備位置對準電極之軟性印刷基板,除此以外,以與實施例1相同之方式,製作第1、第2、第3連接構造體。 The first, second, and third connection structures were produced in the same manner as in the first embodiment except that the epoxy glass substrate not having the alignment electrode and the flexible printed circuit board having no alignment electrode were used.

(實施例7) (Example 7)

使用電極尺寸/電極間距為100μm/100μm、75μm/75μm、50μm/50μm之具有5mm見方之半導體晶片(厚度400μm)及與其相對向之電極之環氧玻璃基板(尺寸30×30mm,厚度0.4mm),除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 A semiconductor wafer (thickness: 400 μm) having a cell size/electrode pitch of 100 μm/100 μm, 75 μm/75 μm, 50 μm/50 μm, and a glass substrate (having a size of 30×30 mm, thickness 0.4 mm) having a 5 mm square semiconductor wafer (thickness: 400 μm) Other than this, the first, second, and third connection structures were obtained in the same manner as in the first embodiment.

(實施例8~11) (Examples 8 to 11)

以下述表1所示之調配量調配下述表1所示之成分,而獲得各向異性導電糊。使用所獲得之各向異性導電糊,除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste. The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.

(比較例1) (Comparative Example 1)

於以電極彼此相對向之方式將上述軟性印刷基板積層於各向異性導電糊層之上表面時,對軟性印刷基板上賦予2MPa之壓力,除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 When the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes were opposed to each other, a pressure of 2 MPa was applied to the flexible printed circuit board, and the same procedure as in Example 1 was obtained. The first, second, and third connection structures.

(比較例2) (Comparative Example 2)

於使各向異性導電糊層硬化時,對軟性印刷基板上賦予2MPa之壓力,除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 When the anisotropic conductive paste layer was cured, the first, second, and third connection structures were obtained in the same manner as in Example 1 except that a pressure of 2 MPa was applied to the flexible printed circuit board.

(比較例3) (Comparative Example 3)

於以電極彼此相對向之方式將上述軟性印刷基板積層於各向異性導電糊層之上表面時,對軟性印刷基板上賦予2MPa之壓力,且於以電極彼此相對向之方式將上述軟性印刷基板積層於各向異性導電糊層之上表面後維持加壓狀態,使各向異性導電糊層硬化時,對軟性印刷基板上賦予2MPa之壓力,除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 When the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other, a pressure of 2 MPa is applied to the flexible printed circuit board, and the flexible printed circuit board is placed so that the electrodes face each other. After laminating on the upper surface of the anisotropic conductive paste layer, the pressure is maintained, and when the anisotropic conductive paste layer is cured, a pressure of 2 MPa is applied to the flexible printed circuit board, and otherwise, in the same manner as in the first embodiment, The first, second, and third connection structures were obtained.

(比較例4) (Comparative Example 4)

以固形物成分成為50重量%之方式使苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」)10重量份溶解於甲基乙基酮(MEK)中,而 獲得溶解液。以下述表2所示之調配量將下述表2所示之除苯氧基樹脂以外之成分與上述溶解液之全部量進行調配,使用行星式攪拌機以2000rpm攪拌5分鐘後,使用棒式塗佈機,以乾燥後之厚度成為30μm之方式塗佈於脫模PET(聚對苯二甲酸乙二酯)膜上。藉由於室溫下進行真空乾燥而去除MEK,藉此獲得各向異性導電膜。 10 parts by weight of a phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so that the solid content was 50% by weight. A solution is obtained. The components other than the phenoxy resin shown in the following Table 2 were mixed with the total amount of the above-mentioned solution, and the mixture was stirred at 2000 rpm for 5 minutes using a planetary mixer at a blending amount shown in the following Table 2, and then coated with a bar. The cloth machine was applied to a release PET (polyethylene terephthalate) film so that the thickness after drying became 30 μm. The MEK was removed by vacuum drying at room temperature, whereby an anisotropic conductive film was obtained.

除使用各向異性導電膜以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the anisotropic conductive film was used.

(比較例5) (Comparative Example 5)

使用電極尺寸/電極間距為100μm/100μm、75μm/75μm、50μm/50μm之具有5mm見方之半導體晶片(厚度400μm)及與其相對向之電極之環氧玻璃基板(尺寸30×30mm,厚度0.4mm),且於使各向異性導電糊層硬化時賦予10MPa之壓力,除此以外,以與實施例7相同之方式,獲得第1、第2、第3連接構造體。 A semiconductor wafer (thickness: 400 μm) having a cell size/electrode pitch of 100 μm/100 μm, 75 μm/75 μm, 50 μm/50 μm, and a glass substrate (having a size of 30×30 mm, thickness 0.4 mm) having a 5 mm square semiconductor wafer (thickness: 400 μm) In addition, the first, second, and third connection structures were obtained in the same manner as in Example 7 except that a pressure of 10 MPa was applied when the anisotropic conductive paste layer was cured.

(比較例6) (Comparative Example 6)

以下述表2所示之調配量調配下述表2所示之成分,而獲得各向異性導電糊。使用所獲得之各向異性導電糊,除此以外,以與實施例1相同之方式,獲得第1、第2、第3連接構造體。 The components shown in the following Table 2 were blended in the amounts shown in Table 2 below to obtain an anisotropic conductive paste. The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.

(評估) (assessment)

(1)黏度 (1) Viscosity

使用E型黏度計(東機產業公司製造),於25℃及5rpm之條件下對各向異性導電糊之黏度進行測定。 The viscosity of the anisotropic conductive paste was measured at 25 ° C and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).

(2)最低熔融黏度 (2) Minimum melt viscosity

對自25℃起至焊料粒子之熔點或導電性粒子表面之焊料之熔點為止之溫度範圍條件下之各向異性導電糊之最低熔融黏度進行測定。 The lowest melt viscosity of the anisotropic conductive paste under the temperature range from 25 ° C to the melting point of the solder particles or the melting point of the solder on the surface of the conductive particles was measured.

(3)連接部之距離(電極間之間隔) (3) Distance of the connecting portion (interval between electrodes)

藉由對所獲得之第1連接構造體進行剖面觀察,而對上下電極相 對向之位置之連接部之距離D1(電極間之間隔)進行評估。 By observing the cross-section of the obtained first connected structure, the upper and lower electrodes are The distance D1 (the interval between the electrodes) of the connection portion to the position is evaluated.

(4)電極之狀態 (4) Status of the electrode

俯視所獲得之第1連接構造體,對第1、第2電極相對向之部分之大小S1與第1、第2電極未對向之部分之大小S2進行評估。求出比(大小S1/大小S2)。 The size of the portion S1 where the first and second electrodes face each other and the size S2 of the portion where the first and second electrodes are not opposed are evaluated in a plan view of the first connection structure obtained in a plan view. Find the ratio (size S1/size S2).

(5)電極彼此之位置偏移之最大距離 (5) The maximum distance at which the electrodes are displaced from each other

藉由對所獲得之第1、第2、第3連接構造體進行剖面觀察,而對上下電極之位置偏移之最大距離進行評估。 The maximum distance of the positional shift of the upper and lower electrodes was evaluated by performing cross-sectional observation of the obtained first, second, and third connection structures.

(6)電極上之焊料之配置精度 (6) Arrangement accuracy of the solder on the electrode

於所獲得之第1、第2、第3連接構造體之剖面(圖1所示之方向之剖面)中,對焊料之總面積100%中自配置於電極間之焊料部分離而殘存於硬化物中之焊料之面積(%)進行評估。再者,計算出5個剖面之面積之平均值。按照下述基準判定電極上之焊料之配置精度。 In the cross section of the obtained first, second, and third connection structures (the cross section in the direction shown in FIG. 1), the solder portion disposed between the electrodes is separated from the total area of the solder by 100% and remains hardened. The area (%) of the solder in the material was evaluated. Furthermore, the average of the areas of the five sections is calculated. The arrangement accuracy of the solder on the electrodes was determined in accordance with the following criteria.

[電極上之焊料之配置精度之判定基準] [Criteria for determining the placement accuracy of the solder on the electrode]

○○:剖面所出現之焊料之總面積100%中,自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)之面積為0% ○○: The area of the solder (solder particles) remaining in the cured product separated from the solder portion disposed between the electrodes by 100% of the total area of the solder which is present in the cross section is 0%

○:剖面所出現之焊料之總面積100%中,自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)之面積超過0%且為10%以下 ○: 100% of the total area of the solder which is present in the cross section, the area of the solder (solder particles) remaining in the hardened material separated from the solder portion disposed between the electrodes is more than 0% and is 10% or less

△:剖面所出現之焊料之總面積100%中,自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)之面積超過10%且為30%以下 Δ: 100% of the total area of the solder which is present in the cross section, the area of the solder (solder particles) remaining in the hardened material separated from the solder portion disposed between the electrodes is more than 10% and is 30% or less

×:剖面所出現之焊料之總面積100%中,自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)之面積超過30% ×: The area of the solder (solder particles) remaining in the hardened material separated from the solder portion disposed between the electrodes is more than 30% in the total area of the solder which is present in the cross section.

(7)上下電極間之導通可靠性 (7) Continuity reliability between upper and lower electrodes

藉由四端子法分別測定所獲得之第1、第2、第3連接構造體(n=15 個)中上下電極間之連接電阻。計算出連接電阻之平均值。再者,根據電壓=電流×電阻之關係,藉由測定流通恆定電流時之電壓,可求出連接電阻。按照下述基準判定導通可靠性。 The first, second, and third connected structures obtained by the four-terminal method were respectively measured (n=15). The connection resistance between the upper and lower electrodes. Calculate the average of the connection resistance. Furthermore, the connection resistance can be obtained by measuring the voltage at which a constant current flows in accordance with the relationship of voltage=current×resistance. The conduction reliability was determined according to the following criteria.

[導通可靠性之判定基準] [Determination of Conductivity Reliability]

○○:連接電阻之平均值為8.0Ω以下 ○○: The average value of the connection resistance is 8.0 Ω or less.

○:連接電阻之平均值超過8.0Ω且為10.0Ω以下 ○: The average value of the connection resistance exceeds 8.0 Ω and is 10.0 Ω or less.

△:連接電阻之平均值超過10.0Ω且為15.0Ω以下 △: The average value of the connection resistance exceeds 10.0 Ω and is 15.0 Ω or less.

×:連接電阻之平均值超過15.0Ω ×: The average value of the connection resistance exceeds 15.0 Ω

(8)鄰接之電極間之絕緣可靠性 (8) Insulation reliability between adjacent electrodes

於所獲得之第1、第2、第3連接構造體(n=15個)中,於溫度85℃、及濕度85%之環境中放置100小時後,對鄰接之電極間施加5V電壓,於25個部位測定電阻值。按照下述基準判定絕緣可靠性。 After placing the first, second, and third connected structures (n=15) obtained in the environment at a temperature of 85 ° C and a humidity of 85% for 100 hours, a voltage of 5 V was applied between the adjacent electrodes. The resistance value was measured at 25 locations. The insulation reliability was determined according to the following criteria.

[絕緣可靠性之判定基準] [Determination of insulation reliability]

○○:連接電阻之平均值為107Ω以上 ○○: The average value of the connection resistance is 10 7 Ω or more.

○:連接電阻之平均值為106Ω以上且未達107Ω ○: The average value of the connection resistance is 10 6 Ω or more and less than 10 7 Ω

△:連接電阻之平均值為105Ω以上且未達106Ω △: The average value of the connection resistance is 10 5 Ω or more and less than 10 6 Ω.

×:連接電阻之平均值未達105Ω ×: The average value of the connection resistance is less than 10 5 Ω

將結果示於下述之表1、2。 The results are shown in Tables 1 and 2 below.

根據實施例1~11與比較例1~5之結果之差異得知,藉由不進行加壓,可獲得提高導通可靠性之效果。 According to the difference between the results of Examples 1 to 11 and Comparative Examples 1 to 5, it was found that the effect of improving the conduction reliability can be obtained without performing pressurization.

根據實施例1~5、8~11與實施例6之結果得知,若具有位置對準用之電極,則可抑制電極彼此之位置偏移。 According to the results of Examples 1 to 5, 8 to 11, and Example 6, it is found that if the electrodes for alignment are provided, the positional deviation of the electrodes can be suppressed.

根據實施例1與比較例1之結果之差異、以及實施例7與比較例5之結果之差異得知,於第2連接對象構件為軟性印刷基板之情形時,與第2連接對象構件為半導體晶片之情形相比,藉由不進行加壓,可更有效地獲得提高導通可靠性之效果。 According to the difference between the results of the first embodiment and the comparative example 1 and the difference between the results of the seventh embodiment and the comparative example 5, when the second connection target member is a flexible printed circuit board, the second connection target member is a semiconductor. Compared with the case of the wafer, the effect of improving the conduction reliability can be more effectively obtained without performing pressurization.

於使用樹脂膜、軟性扁平電纜及剛性軟性基板代替軟性印刷基板之情形時亦相同。 The same applies to the case where a resin film, a flexible flat cable, and a rigid flexible substrate are used instead of the flexible printed substrate.

再者,於實施例1~11所獲得之連接構造體中,於沿第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極互相對向之部分時,於第1電極與第2電極互相對向之部分之面積100%中之50%以上配置有連接部中之焊料部。 Further, in the connection structure obtained in the first to eleventh embodiments, when the first electrode and the second electrode face each other in the direction of lamination of the first electrode, the connection portion, and the second electrode, the first The solder portion in the connection portion is disposed at 50% or more of the area of the portion where the electrode and the second electrode face each other.

又,圖7(a)、(b)及(c)表示本發明之實施形態所包括之連接構造體之一例。圖7(a)及(b)為剖面圖像,圖7(c)為平面圖像。於圖7(a)、(b)、(c)中,得知並不存在自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)。 Further, Fig. 7 (a), (b) and (c) show an example of a connection structure included in the embodiment of the present invention. 7(a) and 7(b) are cross-sectional images, and Fig. 7(c) is a planar image. In (a), (b), and (c) of FIG. 7, it is understood that there is no solder (solder particles) remaining in the cured product due to the separation of the solder portions disposed between the electrodes.

進而,圖8(a)、(b)及(c)表示本發明之實施形態不包括之連接構造體之一例。該連接構造體係藉由於配置第2連接對象構件之步驟中進行加壓而獲得之連接構造體。圖8(a)及(b)為剖面圖像,圖8(c)為平面圖像。於圖8(a)、(b)、(c)中,得知於焊料部之側面存在複數個自配置於電極間之焊料部分離而殘存於硬化物中之焊料(焊料粒子)。再者,確認到於形成連接部之步驟中進行加壓亦可獲得與圖8(a)、(b)及(c)所示之連接構造體相同之連接構造體。 Further, Fig. 8 (a), (b) and (c) show an example of a connection structure which is not included in the embodiment of the present invention. The connection structure is a connection structure obtained by pressurizing in the step of arranging the second connection member. 8(a) and 8(b) are cross-sectional images, and Fig. 8(c) is a planar image. In (a), (b), and (c) of FIG. 8 , it is found that a plurality of solder (solder particles) remaining in the cured portion separated from the solder portion disposed between the electrodes are present on the side surface of the solder portion. Further, it was confirmed that the connection structure obtained in the step of forming the connection portion can be obtained in the same manner as the connection structure shown in Figs. 8(a), (b) and (c).

1‧‧‧連接構造體 1‧‧‧Connection structure

2‧‧‧第1連接對象構件 2‧‧‧1st connection object component

2a‧‧‧第1電極 2a‧‧‧1st electrode

3‧‧‧第2連接對象構件 3‧‧‧2nd connection object component

3a‧‧‧第2電極 3a‧‧‧2nd electrode

4‧‧‧連接部 4‧‧‧Connecting Department

4A‧‧‧焊料部 4A‧‧‧ solder department

4B‧‧‧硬化物部 4B‧‧‧ Hardened Parts

Claims (8)

一種連接構造體之製造方法,其包括:使用含有複數個焊料粒子與熱硬化性成分之導電糊,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電糊之步驟;將表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極相對向之方式配置於上述導電糊之與上述第1連接對象構件側相反之表面上之步驟;及藉由將上述導電糊加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,而利用上述導電糊形成連接上述第1連接對象構件與上述第2連接對象構件之連接部之步驟;並且於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,不進行加壓,而在上述導電糊上施加上述第2連接對象構件之重量。 A method for producing a connection structure comprising the steps of disposing the conductive paste on a surface of a first connection member having at least one first electrode on its surface using a conductive paste containing a plurality of solder particles and a thermosetting component And the second connection member having at least one second electrode on the surface thereof is disposed on the surface of the conductive paste opposite to the first connection member side so that the first electrode and the second electrode face each other And heating the connection portion of the first connection member and the second connection member by the conductive paste by heating the conductive paste to a temperature equal to or higher than a melting point of the solder particles and a curing temperature of the thermosetting component. In the step of arranging the second connection member and the step of forming the connection portion, the weight of the second connection member is applied to the conductive paste without applying pressure. 如請求項1之連接構造體之製造方法,其中上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜、或剛性軟性基板。 The method of manufacturing a connection structure according to claim 1, wherein the second connection target member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. 如請求項1或2之連接構造體之製造方法,其係將上述第1電極與上述第2電極相對向之位置之上述連接部之距離設為3μm以上、40μm以下。 The method of manufacturing the connection structure according to claim 1 or 2, wherein a distance between the connection portion at a position where the first electrode and the second electrode face each other is 3 μm or more and 40 μm or less. 如請求項1或2之連接構造體之製造方法,其中於上述連接部中,將上述第1電極與上述第2電極相對向之部分之大小設為上述第1電極與上述第2電極未對向之部分之大小之2倍以上、40倍以下。 The method of manufacturing the connection structure according to claim 1 or 2, wherein a size of a portion of the connecting portion facing the first electrode and the second electrode is such that the first electrode and the second electrode are not It is 2 times or more and 40 times or less the size of the part. 如請求項1或2之連接構造體之製造方法,其中於25℃下之黏度為10Pa‧s以上、800Pa‧s以下。 The method for producing a joined structure according to claim 1 or 2, wherein the viscosity at 25 ° C is 10 Pa ‧ or more and 800 Pa ‧ or less. 如請求項1或2之連接構造體之製造方法,其中於上述焊料粒子之熔點以下之溫度範圍條件下之黏度之最低值為0.1Pa‧s以上、10Pa‧s以下。 The method for producing a bonded structure according to claim 1 or 2, wherein the minimum value of the viscosity under the temperature range of the melting point or lower of the solder particles is 0.1 Pa ‧ or more and 10 Pa ‧ or less. 如請求項1或2之連接構造體之製造方法,其中上述連接部具有角部,上述第1連接對象構件於上述角部之內側具有位置對準用之第1電極作為上述第1電極,上述第2連接對象構件於上述角部之內側具有位置對準用之第2電極作為上述第2電極,上述位置對準用之第1電極及上述位置對準用之第2電極與上述角部之前端之最短距離為75μm以上、3000μm以下。 The method of manufacturing the connection structure according to claim 1 or 2, wherein the connection portion has a corner portion, and the first connection target member has a first electrode for alignment on the inner side of the corner portion as the first electrode, wherein the first electrode (2) The connection target member has a second electrode for alignment on the inner side of the corner portion as the second electrode, and the shortest distance between the first electrode for alignment and the second electrode for alignment and the front end of the corner portion It is 75 μm or more and 3000 μm or less. 如請求項1或2之連接構造體之製造方法,其中上述第1連接對象構件具有複數個具有長度方向與寬度方向之第1主電極作為上述第1電極,上述第2連接對象構件具有複數個具有長度方向與寬度方向之第2主電極作為上述第2電極,於將上述第1主電極之長度方向及寬度方向上之上述第1連接對象構件之線膨脹率與上述第2主電極之長度方向及寬度方向上之上述第2連接對象構件之線膨脹率的差設為C(ppm/℃)、將形成上述連接部時之上述導電糊之加熱溫度設為T(℃)、將上述第1主電極之寬度方向上複數個上述第1主電極整體之尺寸設為Yt(mm)、將複數個上述第1主電極之每個電極於寬度方向上之尺寸設為Ya(mm)時,滿足式:C×T/1000000×Yt<0.5×Ya。 The method of manufacturing the connection structure according to claim 1 or 2, wherein the first connection target member has a plurality of first main electrodes having a longitudinal direction and a width direction as the first electrode, and the second connection target member has a plurality of a second main electrode having a longitudinal direction and a width direction as the second electrode, and a linear expansion ratio of the first connection member and a length of the second main electrode in a longitudinal direction and a width direction of the first main electrode The difference in linear expansion ratio of the second connection member in the direction and the width direction is C (ppm/° C.), and the heating temperature of the conductive paste when the connection portion is formed is T (° C.) When the size of the plurality of first main electrodes in the width direction of the main electrode is Yt (mm), and the size of each of the plurality of first main electrodes in the width direction is Ya (mm), Satisfaction formula: C × T / 1000000 × Yt < 0.5 × Ya.
TW104105916A 2014-02-24 2015-02-24 Manufacturing method of connecting structure TWI647709B (en)

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