TW201531795A - Photomask blank and photomask for suppressing heat absorption - Google Patents

Abstract

A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Description

Blank reticle and reticle for suppressing heat absorption

Embodiments of the present disclosure are directed to a reticle, and more particularly to a photomask blank and/or reticle that is capable of suppressing heat absorption during a lithographic process.

Cross-references to related applications

This application is based on the Korean Patent Application No. 10-2014-0014898 filed by the Korea Intellectual Property Office on February 10, 2014 and June 16, 2014, respectively, in accordance with Article 119(a) of the US Code No. 35. And the priority of 10-2014-0073, the entire disclosure of which is incorporated herein by reference.

In general, a semiconductor device has a structure in which a pattern is provided on a semiconductor substrate. A pattern disposed on the semiconductor substrate as an active or passive component is formed through a lithography process and an etching process. Forming a photoresist layer pattern by using a lithography process involves forming a photoresist layer on a target layer on which the pattern is to be formed, and then performing an exposure process using a photomask and a development process using a developer . The photoresist layer pattern can be used as an etch mask layer for patterning the target layer. The reticle for transferring a pattern to a wafer has substantially a transfer pattern in which a transfer pattern to be transferred is disposed in a light transmission The structure on the substrate.

Various embodiments are directed to a blank reticle (also referred to herein as a "blank mask") for suppressing heat absorption and a reticle.

In an embodiment, a blank mask may include: a light transmissive substrate; a highly reflective material layer disposed on the light transmissive substrate; and a light shield disposed on the highly reflective material layer ( Shielding layer.

In an embodiment, a blank mask may include: a light transmissive substrate; and a light shielding layer disposed on the light transmissive substrate and composed of a material that reflects 20% to 90% of the irradiated light Formed.

In an embodiment, a reticle may include: a transparent substrate; a highly reflective material layer pattern disposed on the transparent substrate to expose a light transmissive region of the transparent substrate; A light shielding layer pattern is disposed on the highly reflective material layer pattern.

In an embodiment, a reticle may include: a transparent substrate; and a light shielding layer pattern disposed on the transparent substrate to be transferred to a wafer by a lithography process, and It is formed of a material that reflects 20% to 90% of the amount of light that is transmitted through the light-transmitting substrate.

In an embodiment, a reticle may include: a light transmissive substrate; and a light shielding layer pattern disposed on the light transmissive substrate and including a relatively thick first light shielding layer pattern and a relative a thin second light shielding layer pattern, wherein the first light shielding layer pattern and the second light shielding layer pattern are all transferred to a wafer by a lithography process.

In an embodiment, a reticle may include: a transparent substrate; and a light screen A mask pattern disposed on the light transmissive substrate and having a trench segment exposing the light transmissive substrate therein.

110‧‧‧ Blank mask

111‧‧‧Transparent substrate

112‧‧‧Highly reflective material layer

113‧‧‧Light shield

114‧‧‧Photoresist layer

120‧‧‧ Blank mask

121‧‧‧Transparent substrate

122‧‧‧Highly reflective material layer

122a‧‧‧ first floor

122b‧‧‧ second floor

123‧‧‧Light shield

124‧‧‧ photoresist layer

130‧‧‧Blank mask

131‧‧‧Transparent substrate

132‧‧‧Highly reflective material layer

133-1‧‧‧ phase shift layer

133-2‧‧‧Light shield

134‧‧‧ photoresist layer

140‧‧‧Blank mask

141‧‧‧Transparent substrate

142‧‧‧Highly reflective material layer

142a‧‧‧ first floor

142b‧‧‧ second floor

143-1‧‧‧ phase shift layer

143-2‧‧‧Light shield

144‧‧‧ photoresist layer

150‧‧‧ Blank mask

151‧‧‧Transparent substrate

153‧‧‧Light shield

154‧‧‧ photoresist layer

210‧‧‧Photomask

211‧‧‧Transparent substrate

212‧‧‧Highly reflective material layer pattern

213‧‧‧Light shielding pattern

215‧‧‧Lighting area

216‧‧‧Light shielding area

218‧‧‧ incident light

220‧‧‧Photomask

221‧‧‧Transparent substrate

222‧‧‧Highly reflective material layer pattern

222a‧‧‧ first layer pattern

222b‧‧‧Second layer pattern

223‧‧‧Light shielding pattern

225‧‧‧Lighting area

226‧‧‧Light shielding area

230‧‧‧Photomask

230M‧‧‧Main pattern area

230F‧‧‧Box area

231‧‧‧Transparent substrate

232‧‧‧Highly reflective material layer pattern

233-1‧‧‧ phase shift layer pattern

233-2‧‧‧Light shielding pattern

235‧‧‧Lighting area

236‧‧• Phase shifting area

238‧‧‧ incident light

240‧‧‧Photomask

240M‧‧‧Main pattern area

240F‧‧‧Box area

241‧‧‧Transparent substrate

242‧‧‧Highly reflective material layer pattern

242a‧‧‧ first layer pattern

242b‧‧‧Second layer pattern

243-1‧‧‧ phase shift layer pattern

243-2‧‧‧Light shielding pattern

245‧‧‧Lighting area

246‧‧‧ Phase shifting area

248‧‧‧ incident light

250‧‧‧Photomask

251‧‧‧Transparent substrate

253‧‧‧Light shielding pattern

255‧‧‧Lighting area

256‧‧‧Light shielding area

258‧‧‧ incident light

260‧‧‧Photomask

261‧‧‧Transparent substrate

263‧‧‧Light shielding pattern

263a‧‧‧First light shielding layer pattern

263b‧‧‧second light shielding layer pattern

265‧‧‧Lighting area

266‧‧‧Light shielding area

268‧‧‧Light

269‧‧‧Light

270‧‧‧Photomask

271‧‧‧Transparent substrate

273‧‧‧Light shielding pattern

273a‧‧‧First light shielding layer pattern

273b‧‧‧second light shielding layer pattern

275‧‧‧Lighting area

276‧‧‧Light shielding area

278‧‧‧Light

279‧‧‧Light

280‧‧‧Photomask

281‧‧‧Transparent substrate

283‧‧‧Light shielding pattern

283a‧‧‧groove section

285‧‧‧Lighting area

286‧‧‧Light shielding area

381‧‧‧Substrate

382‧‧‧Target patterned layer

383‧‧‧ photoresist layer pattern

391‧‧‧Area

392‧‧‧Area

T1‧‧‧first thickness

T2‧‧‧second thickness

T3‧‧‧first thickness

T4‧‧‧second thickness

W1‧‧‧Width

1 is a cross-sectional view depicting a blank mask in accordance with an embodiment.

2 is a cross-sectional view depicting a blank mask in accordance with an embodiment.

3 is a cross-sectional view depicting a blank mask in accordance with an embodiment.

4 is a cross-sectional view depicting a blank mask in accordance with an embodiment.

FIG. 5 is a cross-sectional view depicting a blank mask in accordance with an embodiment.

FIG. 6 is a cross-sectional view depicting a reticle in accordance with an embodiment.

FIG. 7 is a cross-sectional view depicting a reticle in accordance with an embodiment.

FIG. 8 is a cross-sectional view depicting a reticle in accordance with an embodiment.

9 is a cross-sectional view depicting a reticle in accordance with an embodiment.

Figure 10 is a cross-sectional view depicting a reticle in accordance with an embodiment.

Figure 11 is a plan view depicting a reticle in accordance with an embodiment.

Figure 12 is a cross-sectional view taken along line II' of Figure 11 .

Fig. 13 is a view for explaining the amount of light absorption in a state in which exposure is performed using the reticle of Figs. 11 and 12.

Figure 14 is a plan view depicting a photoresist layer pattern formed by performing a lithography process using the reticle of Figures 11 and 12.

Figure 15 is a cross-sectional view taken along line II-II' of Figure 14.

Figure 16 is a plan view depicting a reticle in accordance with an embodiment.

Figure 17 is a cross-sectional view taken along line III-III' of Figure 16 .

Fig. 18 is a view for explaining the amount of light absorption in a state in which exposure is performed using the mask of Figs. 16 and 17.

19 is a plan view depicting a reticle in accordance with an embodiment.

Figure 20 is a cross-sectional view taken along line IV-IV' of Figure 19.

A blank reticle (also referred to herein as a "blank mask") for suppressing heat absorption and a reticle are hereby described in various embodiments with reference to the accompanying drawings.

In a lithography process, a specified wavelength of light is transmitted through a mask to a photoresist layer on a wafer. The light illumination of the wafer is substantially shielded by a light shielding region of the reticle (for example, a region in which one of the light shielding patterns is disposed), and only light transmitted through a light transmitting region is selectively illuminated. Wafer. Thus, a significant amount of the irradiated light energy is absorbed by the light-shielding pattern, which may cause heat to be generated at or within the light-shielding pattern. The generated heat is transferred to a light-transmissive substrate, and thus the light-transmitting substrate expands due to an increase in temperature. Due to the expansion of the light-transmitting substrate, an error may occur in the positioning accuracy of the pattern of the reticle, and thus the coverage between the wafer and the reticle may not be accurately ensured. Various embodiments disclosed herein provide blank masks and reticle that are capable of inhibiting the absorption of light that is illuminated during a lithography process into a transfer pattern. Since the light energy absorbed into the transfer pattern is suppressed, the temperature rise of the transfer pattern and a light-transmitting substrate during the lithography process can be suppressed.

In the present specification, terms such as "first" and "second" are used to distinguish members from each other, and thus do not limit the members or indicate a particular order. Furthermore, when A piece is said to be "on" another component, or "top", "bottom" or "side" of another component, which indicates a relative positional relationship between the two, Moreover, it is not intended to indicate that the member is in direct contact with another member, or that another member is further interposed between the interfaces therebetween. Furthermore, when a member is referred to as being "coupled" or "connected" to another member, it is indicated that the member can be directly coupled or connected to another member, or an additional member can be inserted Form a coupling relationship or a connection relationship.

1 is a cross-sectional view depicting a blank mask in accordance with an embodiment. Referring to FIG. 1, a blank mask 110 according to the present embodiment has a highly reflective material layer 112, a light shielding layer 113, and a photoresist layer 114 stacked and/or disposed on a transparent substrate 111. structure. In another embodiment, the photoresist layer 114 can be omitted. The light transmissive substrate 111 may be formed of a material that transmits light, such as quartz. The highly reflective material layer 112 may be composed of one comprising bismuth (Si), molybdenum (Mo), tantalum (Ta), zirconium (Zr), aluminum (Al), titanium (Ti), platinum (Pt), tantalum ( A material formed of at least one of Ru), chromium (Cr), and tin (Sn). Furthermore, the highly reflective material layer 112 may additionally comprise any of oxygen (O) and nitrogen (N) components. Such a highly reflective material layer 112 can have a reflectance of from 20% to 90% relative to light. The reflectance of the highly reflective material layer 112 can be suitably controlled by adjusting the composition ratio of the material forming the highly reflective material layer 112. In an embodiment, the highly reflective material layer 112 may have a thickness that is less than the thickness of the light shielding layer 113. In another embodiment, the highly reflective material layer 112 may have a thickness equal to or greater than the light shielding layer 113. The light shielding layer 113 may be formed of a layer of a light shielding material such as a chromium (Cr) layer.

2 is a cross-sectional view depicting a blank mask in accordance with an embodiment. Referring to FIG. 2, a blank mask 120 according to the present embodiment has a highly reflective material layer therein. 122. A light shielding layer 123 and a photoresist layer 124 are stacked and/or disposed on a transparent substrate 121. In another embodiment, the photoresist layer 124 can be omitted.

The light transmissive substrate 121 may be formed of a material that transmits light, such as quartz. The highly reflective material layer 122 can have a multi-layered structure. In the present embodiment, the highly reflective material layer 122 may have a structure in which a first layer 122a and a second layer 122b are alternately disposed. In an embodiment, the first layer 122a and the second layer 122b may be a molybdenum (Mo) layer and a germanium (Si) layer, respectively. In another embodiment, the first layer 122a and the second layer 122b may be a ruthenium (Ru) layer and a bismuth (Si) layer, a molybdenum (Mo) layer, and a beryllium (Be) layer, respectively. It is a layer of (Si) and a layer of (Nb).

The highly reflective material layer 122 can have a reflectance of from 20% to 90% relative to light. The reflectivity of the highly reflective material layer 122 can be suitably controlled by adjusting the thickness and number of highly reflective material layers 122 comprising the stack of the first layer 122a and the second layer 122b. In an embodiment, the highly reflective material layer 122 may have a thickness that is less than the thickness of the light shielding layer 123. In another embodiment, the highly reflective material layer 122 may have a thickness equal to or greater than the light shielding layer 123. The light shielding layer 123 may be formed of a layer of a light shielding material such as a chromium (Cr) layer.

3 is a cross-sectional view depicting a blank mask in accordance with an embodiment. Referring to FIG. 3, a blank mask 130 according to the present embodiment has a material layer 132, a phase shift layer 133-1, a light shielding layer 133-2, and a photoresist layer 134 stacked thereon and/or Or a structure disposed on a light-transmitting substrate 131. In another embodiment, the photoresist layer 134 may be omitted.

The light transmissive substrate 131 may be formed of a material that transmits light, such as quartz. The highly reflective material layer 132 may be composed of one containing bismuth (Si), molybdenum (Mo), A material formed of at least one of tantalum (Ta), zirconium (Zr), aluminum (Al), titanium (Ti), platinum (Pt), ruthenium (Ru), chromium (Cr), and tin (Sn). Furthermore, the highly reflective material layer 132 may additionally comprise any component of oxygen (O) and nitrogen (N).

Such a highly reflective material layer 132 can have a reflectance of from 20% to 90% relative to light. The reflectance of the highly reflective material layer 132 can be suitably controlled by adjusting the composition ratio of the material forming the highly reflective material layer 132. In an embodiment, the highly reflective material layer 132 may have a thickness that is less than the thickness of the phase shift layer 133-1. In another embodiment, the highly reflective material layer 132 can have a thickness equal to or greater than the phase shift layer 133-1. In an embodiment, the phase shifting layer 133-1 may be formed of a phase shifting material such as molybdenum tantalum (MoSi). In another embodiment, the phase shift layer 133-1 may be formed of a molybdenum tantalum nitride (MoSiN) or a tantalum oxide (SiO2).

The highly reflective material layer 132 and the stacked structure of the phase shift layer 133-1 may have a transmittance equal to or less than 50% (for example, about 6%), and a phase shift of 150 to 250 degrees. The light shielding layer 133-2 may be formed of a light shielding material such as chromium (Cr).

4 is a cross-sectional view depicting a blank mask in accordance with an embodiment. Referring to FIG. 4, a blank mask 140 according to the present embodiment has a highly reflective material layer 142, a phase shift layer 143-1, a light shielding layer 143-2, and a photoresist layer 144 stacked and/or Or a structure disposed on a light-transmitting substrate 141. In another embodiment, the photoresist layer 144 may be omitted. The light transmissive substrate 141 may be formed of a material that transmits light, such as quartz.

The highly reflective material layer 142 can have a multi-layered structure. In the present embodiment, the highly reflective material layer 142 may have a structure in which a first layer 142a and a second layer 142b are alternately disposed. In an embodiment, the first layer 142a and the first The second layer 142b may be a molybdenum (Mo) layer and a germanium (Si) layer, respectively. In another embodiment, the first layer 142a and the second layer 142b may be a ruthenium (Ru) layer and a bismuth (Si) layer, a molybdenum (Mo) layer, and a beryllium (Be) layer, respectively. It is a layer of (Si) and a layer of (Nb).

Such a highly reflective material layer 142 can have a reflectance of from 20% to 90% relative to light. The reflectivity of the highly reflective material layer 142 can be suitably adjusted by adjusting the thickness and number of highly reflective material layers 142 comprising the first layer 142a and the second layer 142b forming the highly reflective material layer 142. Ground control. In an embodiment, the highly reflective material layer 142 may have a thickness that is less than the thickness of the phase shift layer 143-1. In another embodiment, the highly reflective material layer 142 may have a thickness equal to or greater than the phase shift layer 143-1.

In an embodiment, the phase shifting layer 143-1 may be formed of a phase shifting material such as molybdenum tantalum (MoSi). In another embodiment, the phase shift layer 143-1 may be formed of a molybdenum tantalum nitride (MoSiN) or a tantalum oxide (SiO2). The stacked structure of the highly reflective material layer 142 and the phase shift layer 143-1 may have a transmittance equal to or less than 50% (for example, about 6%), and a phase shift of 150 to 250 degrees. The light shielding layer 143-2 may be formed of a light shielding material such as chromium (Cr).

FIG. 5 is a cross-sectional view depicting a blank mask in accordance with an embodiment. Referring to FIG. 5, a blank mask 150 according to the present embodiment has a structure in which a light shielding layer 153 and a photoresist layer 154 are stacked and/or disposed on a light-transmitting substrate 151. In another embodiment, the photoresist layer 154 may be omitted. The light transmissive substrate 151 may be formed of a material that transmits light, such as quartz. The light shielding layer 153 may be formed of a material that shields light and has a reflectance of 20% to 90% relative to the light.

In an embodiment, the light shielding layer 153 may be, for example, a chromium (Cr). The layer of light-shielding material of the layer is added with a component that adjusts the reflectance, such as oxygen (O) and nitrogen (N). Although not shown in the drawings, in an embodiment, a phase shift layer may be additionally disposed between the light shielding layer 153 and the light transmissive substrate 151. In the embodiment, the phase shifting layer may have a phase shifting material such as molybdenum ruthenium (MoSi) by appropriately adding a composition of, for example, oxygen (O) and nitrogen (N) adjusting reflectance. Reflectance of 20% to 90% relative to light.

FIG. 6 is a cross-sectional view depicting a reticle in accordance with an embodiment. Referring to FIG. 6, a reticle 210 according to the present embodiment includes a highly reflective material layer pattern 212 and a light shielding layer pattern 213 disposed on a light transmissive substrate 211. Such a reticle 210 can be formed by a suitable patterning process by using the blank mask 110 described above with reference to FIG. 1 as an original processing target.

The reticle 210 has a light transmitting region 215 and a light shielding region 216. The surface of the transparent substrate 211 is exposed in the light transmitting region 215, and the highly reflective material layer pattern 212 and the light shielding layer pattern 213 are the transparent substrate 211 disposed in the light shielding region 216. on. The light transmissive substrate 211 may be formed of a light transmissive material such as quartz.

Although the light shielding region 216 in which the material layer pattern 212 and the light shielding layer pattern 213 in which the high reflection is disposed is depicted in the drawing is an area in which the main pattern for transferring the pattern to a wafer is set, The light shielding region 216 can serve as other regions, such as a frame region and/or a cutting line surrounding a region in which the main pattern is to be disposed.

The highly reflective material layer pattern 212 may be composed of one comprising bismuth (Si), molybdenum (Mo), tantalum (Ta), zirconium (Zr), aluminum (Al), titanium (Ti), platinum (Pt), tantalum. A material formed of at least one of (Ru), chromium (Cr), and tin (Sn). Furthermore, the highly reflective material layer pattern 212 may additionally comprise any of oxygen (O) and nitrogen (N) components.

Such a highly reflective material layer pattern 212 can have a reflectance of from 20% to 90% relative to light. The reflectance of the highly reflective material layer pattern 212 can be appropriately controlled by adjusting the composition ratio of the material forming the highly reflective material layer pattern 212. In an embodiment, the highly reflective material layer pattern 212 may have a thickness that is less than a thickness of the light shielding layer pattern 213. In another embodiment, the highly reflective material layer pattern 212 may have a thickness equal to or greater than the light shielding layer pattern 213. The light shielding layer pattern 213 may be formed of a light shielding material such as a chromium (Cr) layer pattern.

In the reticle 210 according to the present embodiment, 20% to 90% of the light corresponding to the incident light 218 transmitted through the light-transmitting substrate 211 is reflected to the light-transmitting by the highly-reflected material layer pattern 212. Substrate 211. Thus, a light amount corresponding to 6% of the incident light 218 is transmitted from the light shielding layer pattern 213. Thus, a light amount corresponding to 4% to 74% of the incident light 218 is absorbed into the light shielding layer pattern 213. As shown in the figure, in an embodiment in which the highly reflective material layer pattern 212 has a reflectance of 50% and the light shielding layer pattern 213 has a transmittance of 6%, corresponding to 44% of the light is absorbed into the light shielding layer pattern 213. Therefore, during a lithography process, when light is absorbed into the light shielding layer pattern 213 as compared with all remaining light amounts (except for a small amount of reflected light and transmitted light), the light shielding The temperature rise of the layer pattern 213 can be suppressed. In another embodiment, when a material having a low thermal conductivity is used as the material of the highly reflective material layer pattern 212, the heat generated by the light shielding layer pattern 213 is reduced by a certain amount. Transfer to the light transmissive substrate 211 is possible.

FIG. 7 is a cross-sectional view depicting a reticle in accordance with an embodiment. Referring to FIG. 7, a reticle 220 according to the present embodiment includes a highly reflective material layer pattern 222 and a light shield. A layer pattern 223 is disposed on a light transmissive substrate 221. Such a reticle 220 can be formed by a suitable patterning process by using the blank mask 120 described herein with reference to FIG. 2 as an original processing target. The reticle 220 has a light transmitting region 225 and a light shielding region 226. The surface of the transparent substrate 221 is exposed in the light transmitting region 225, and the highly reflective material layer pattern 222 and the light shielding layer pattern 223 are the transparent substrate 221 disposed in the light shielding region 226. on. The light transmissive substrate 221 may be formed of a light transmissive material such as quartz. Although the light shielding region 226 in which the material layer pattern 222 and the light shielding layer pattern 223 in which the high reflection is disposed is depicted in the drawing is an area in which a main pattern for transferring a pattern to a wafer is set, but The light shielding region 226 may serve as other regions, such as a frame region and/or a cutting line surrounding a region in which the main pattern is to be disposed.

The highly reflective material layer pattern 222 may have a multi-layered structure in which the first layer pattern 222a and the second layer pattern 222b are alternately disposed. In an embodiment, the first layer pattern 222a and the second layer pattern 222b may be a molybdenum (Mo) layer pattern and a bismuth (Si) layer pattern, respectively. In another embodiment, the first layer pattern 222a and the second layer pattern 222b may be a ruthenium (Ru) layer pattern and a bismuth (Si) layer pattern, a molybdenum (Mo) layer pattern, and a beryllium (Be) layer pattern, respectively. Or a 矽 (Si) layer pattern and a 铌 (Nb) layer pattern. The highly reflective material layer pattern 222 can have a reflectance of from 20% to 90% relative to light. The reflectance of the highly reflective material layer pattern 222 can be adjusted by adjusting the stacked high reflective material layer pattern 222 including the first layer pattern 222a and the second layer pattern 222b forming the highly reflective material layer pattern 222. The thickness and quantity are appropriately controlled. In an embodiment, the highly reflective material layer pattern 222 may have a thickness that is less than a thickness of the light shielding layer pattern 223. In another embodiment, the highly reflective material layer pattern 222 may have a thickness equal to or greater than the light shielding layer pattern 223. The light The shield pattern 223 may be formed of a light shielding material such as a chromium (Cr) layer pattern.

In the reticle 220 according to the present embodiment, 20% to 90% of the light corresponding to the incident light 228 transmitted through the light-transmitting substrate 221 is reflected to the light-transmitting by the highly-reflected material layer pattern 222. Substrate 221. Thus, a light amount corresponding to 6% of the incident light 228 is transmitted from the light shielding layer pattern 223. Thus, a light amount corresponding to 4% to 74% of the incident light 228 is absorbed into the light shielding layer pattern 223. As shown in the figure, in an embodiment in which the highly reflective material layer pattern 222 has a reflectance of 50% and the light shielding layer pattern 223 has a transmittance of 6%, corresponding to 44% of the light is absorbed into the light shielding layer pattern 223. Therefore, during a lithography process, when light is absorbed into the light shielding layer pattern 223 as compared with all remaining light amounts (except for a small amount of reflected light and transmitted light), the light shielding The temperature rise of the layer pattern 223 can be suppressed. In another embodiment, when a material having low thermal conductivity is used as the material of the highly reflective material layer pattern 222, the heat generated by the light shielding layer pattern 223 is reduced by a certain amount. Transfer to the light transmissive substrate 221 is possible.

FIG. 8 is a cross-sectional view depicting a reticle in accordance with an embodiment. Referring to FIG. 8, a photomask 230 according to the present embodiment includes a highly reflective material layer pattern 232 and a phase shift layer pattern 233-1 disposed on a light transmissive substrate 231. Such a reticle 230 can be formed by a suitable patterning process by using the blank mask 130 described herein with reference to FIG. 3 as an original processing target. The reticle 230 has a main pattern area 230M and a frame area 230F. The main pattern area 230M is surrounded by the frame area 230F. The main pattern area 230M is an area in which a phase shift layer pattern 233-1 for patterning to a wafer is disposed, and the frame area 230F is a medium in which light is shielded to be suppressed in a lithography process. Heavy during the period The area of the phenomenon. The main pattern region 230M has a light transmissive region 235 and a phase shift region 236. The surface of the light transmissive substrate 231 is exposed in the light transmissive region 235, and the highly reflective material layer pattern 232 and the phase shift layer pattern 233-1 are light transmissive disposed in the phase shift region 236. On the substrate 231. In the frame region 230F, the highly reflective material layer pattern 232, the phase shift layer pattern 233-1, and the light shielding layer pattern 233-2 are disposed on the light transmissive substrate 231. The light transmissive substrate 231 may be formed of a light transmissive material such as quartz. Although not shown in the figures, in an embodiment in which a plurality of primary pattern regions 230M are defined, the primary pattern regions 230M may be divided by a cut line. In the embodiment, at the cut line, as in the frame region 230F, the highly reflective material layer pattern 232, the phase shift layer pattern 233-1, and the light shielding layer pattern 233-2 are It is disposed on the light-transmitting substrate 231.

The highly reflective material layer pattern 232 may be composed of one comprising bismuth (Si), molybdenum (Mo), tantalum (Ta), zirconium (Zr), aluminum (Al), titanium (Ti), platinum (Pt), tantalum. A material formed of at least one of (Ru), chromium (Cr), and tin (Sn). Furthermore, the highly reflective material layer pattern 232 may additionally comprise any of oxygen (O) and nitrogen (N). Such a highly reflective material layer pattern 232 can have a reflectance of from 20% to 90% relative to light. The reflectance of the highly reflective material layer pattern 232 can be appropriately controlled by adjusting the composition ratio of the material forming the highly reflective material layer pattern 232. In an embodiment, the highly reflective material layer pattern 232 may have a thickness that is less than the thickness of the phase shift layer pattern 233-1. In another embodiment, the highly reflective material layer pattern 232 may have a thickness equal to or greater than the phase shift layer pattern 233-1. In an embodiment, the phase shift layer pattern 233-1 may be formed of a phase shift material such as molybdenum tantalum (MoSi). In another embodiment, the phase shift layer pattern 233-1 may be a molybdenum niobium nitride (MoSiN) is formed by a cerium oxide (SiO2). The highly reflective material layer pattern 232 and the stacked structure of the phase shift layer pattern 233-1 may have a transmittance equal to or less than 50% (for example, about 6%), and a phase shift of 150 to 250 degrees. . The light shielding layer pattern 233-2 may be formed of a light shielding material such as chromium (Cr).

In the photomask 230 according to the present embodiment, 20% to 90% of the light corresponding to the incident light 238 transmitted through the transparent substrate 231 is reflected by the highly reflective material layer pattern 232 to the Transmissive substrate 231. Furthermore, a portion of the light transmitted through the highly reflective material layer pattern 232 is reflected to the light transmissive substrate 231 by the phase shift layer pattern 233-1. Thus, a light amount corresponding to 6% of the incident light 238 is transmitted from the phase shift layer pattern 233-1. Thus, a light amount corresponding to 4% to 74% of the incident light 238 is absorbed into the phase shift layer pattern 233-1.

As shown in the figure, in an embodiment in which the highly reflective material layer pattern 232 has a reflectance of 50% and the phase shift layer pattern 233-1 has a transmittance of 6%, When the reflectance of the phase shift layer pattern 233-1 is ignored, the phase shift layer pattern 233-1 absorbs light corresponding to 44%. Therefore, during a lithography process, when compared to the case where all of the remaining amount of light (except for a small amount of reflected light and transmitted light) is absorbed into the phase shift layer pattern 233-1, The temperature rise of the phase shift layer pattern 233-1 can be suppressed. In another embodiment, when a material having a low thermal conductivity is used as the material of the highly reflective material layer pattern 232, a certain degree is reduced due to the amount of light absorbed by the phase shift layer pattern 233-1. It is possible that heat is transferred to the light transmissive substrate 231.

9 is a cross-sectional view depicting a reticle in accordance with an embodiment. Referring to FIG. 9, a photomask 240 according to the present embodiment includes a highly reflective material layer pattern 242 and a phase shift layer. The pattern 243-1 is disposed on a light transmissive substrate 241. Such a reticle 240 can be formed by a suitable patterning process by using the blank mask 140 described herein with reference to FIG. 4 as an original processing target. The reticle 240 has a main pattern area 240M and a frame area 240F. The main pattern area 240M is surrounded by the frame area 240F. The main pattern area 240M is an area in which a phase shift layer pattern 243-1 for patterning to a wafer is disposed, and the frame area 240F is a medium in which light is shielded to be suppressed in a lithography process The area of overlap during the period. The main pattern region 240M has a light transmissive region 245 and a phase shift region 246. The surface of the light transmissive substrate 241 is exposed in the light transmissive region 245, and the highly reflective material layer pattern 242 and the phase shift layer pattern 243-1 are light transmissive disposed in the phase shift region 246. On the substrate 241. In the frame region 240F, the highly reflective material layer pattern 242, the phase shift layer pattern 243-1, and the light shielding layer pattern 243-2 are disposed on the light transmissive substrate 241.

The light transmissive substrate 241 may be formed of a light transmissive material such as quartz. Although not shown in the drawings, in an embodiment in which a plurality of main pattern regions 240M are defined, the main pattern regions 240M may be divided by a cut line. In the embodiment, at the cut line, as in the frame region 240F, the highly reflective material layer pattern 242, the phase shift layer pattern 243-1, and the light shielding layer pattern 243-2 are set. On the light transmissive substrate 241.

The highly reflective material layer pattern 242 may have a multi-layered structure in which the first layer pattern 242a and the second layer pattern 242b are alternately disposed. In an embodiment, the first layer pattern 242a and the second layer pattern 242b may be a molybdenum (Mo) layer pattern and a bismuth (Si) layer pattern, respectively. In another embodiment, the first layer pattern 242a and the second layer pattern 242b may be a ruthenium (Ru) layer pattern and a bismuth (Si) layer pattern, a molybdenum (Mo) layer pattern, and a beryllium (Be) layer pattern, respectively. Case, or 矽 (Si) layer pattern and 铌 (Nb) layer pattern. The highly reflective material layer pattern 242 can have a reflectance of 20% to 90% relative to light. The reflectivity of the highly reflective material layer pattern 242 can be adjusted by adjusting the stacked high reflective material layer pattern 222 including the first layer pattern 242a and the second layer pattern 242b forming the highly reflective material layer pattern 242. The thickness and quantity are appropriately controlled. In an embodiment, the highly reflective material layer pattern 242 may have a thickness that is less than a thickness of the light shielding layer pattern 243-1. In another embodiment, the highly reflective material layer pattern 242 may have a thickness equal to or greater than the light shielding layer pattern 243-1.

In an embodiment, the phase shift layer pattern 243-1 may be formed of a phase shift material such as molybdenum tantalum (MoSi). In another embodiment, the phase shift layer pattern 243-1 may be formed of a molybdenum tantalum nitride (MoSiN) or a tantalum oxide (SiO2). The stacked structure of the highly reflective material layer pattern 242 and the phase shift layer pattern 243-1 may have a transmittance equal to or less than 50% (for example, about 6%), and a phase shift of 150° to 250°. . The light shielding layer pattern 243-2 may be formed of a light shielding material such as chromium (Cr).

In the reticle 240 according to the present embodiment, 20% to 90% of the light corresponding to the incident light 248 transmitted through the transparent substrate 241 is reflected by the highly reflective material layer pattern 242 to the Transmissive substrate 241. Furthermore, a portion of the light transmitted through the highly reflective material layer pattern 242 is reflected to the light transmissive substrate 241 by the phase shift layer pattern 243-1. Thus, a 6% amount of light corresponding to the incident light 248 is transmitted from the phase shift layer pattern 243-1. Thus, a light amount corresponding to 4% to 74% of the incident light 248 is absorbed into the phase shift layer pattern 243-1.

As shown in the figure, the highly reflective material layer pattern 242 is In the case of having a reflectance of 50% and the phase shift layer pattern 243-1 has a transmittance of 6%, when the reflectance of the phase shift layer pattern 243-1 is ignored, the phase shift layer pattern The 243-1 absorption corresponds to 44% of the light. Therefore, during a lithography process, when compared to all of the remaining amount of light (except for a small amount of reflected light and transmitted light) being absorbed into the phase shift layer pattern 243-1, The temperature rise of the phase shift layer pattern 243-1 can be suppressed. In another embodiment, when a material having a low thermal conductivity is used as the material of the highly reflective material layer pattern 242, a certain degree is reduced due to the amount of light absorbed by the phase shift layer pattern 243-1. It is possible that heat is transferred to the light transmissive substrate 241.

Figure 10 is a cross-sectional view depicting a reticle in accordance with an embodiment. Referring to FIG. 10, a photomask 250 according to the present embodiment includes a light shielding layer pattern 253 which is disposed on a light transmissive substrate 251. The transparent substrate 251 has a light transmitting region 255 and a light shielding region 256. The surface of the light-transmitting substrate 251 is exposed in the light-transmitting region 255, and the light-shielding layer pattern 253 is disposed on the light-transmitting substrate 251 in the light-shielding region 256. The light shielding region 256 may include a cutting line or a frame region except for a main pattern region in which the transfer pattern is disposed. In an embodiment, the light transmissive substrate 251 may be formed of quartz. In an embodiment, the light shielding layer pattern 253 may be formed of a light shielding material such as chromium (Cr). In the reticle 250 according to the present embodiment, the light shielding layer pattern 253 is at least 20% to 90% (for example, 50%) which can reflect the incident light 258 and can transmit up to 10% (for example, 6%). The material of the incident light 258 is formed.

In an embodiment, a component that adjusts the reflectance, such as oxygen (O) and nitrogen (N), may be added to a material such as chromium (Cr) that forms the light-shielding layer pattern 253. As shown in the figure, the light shielding layer pattern 253 has a reflectance of 50%. In an embodiment of a transmittance of 6%, 44% of the amount of light incident on the light shielding layer pattern 253 corresponding to the light 258 is absorbed into the light shielding layer pattern 253. Therefore, during a lithography process, when light is absorbed into the light shielding layer pattern 253 as compared with all remaining light amounts (except for a small amount of reflected light and transmitted light), the light shielding The temperature rise of the layer pattern 253 can be suppressed. In another embodiment, when a material having a low thermal conductivity is used as the material of the light shielding layer pattern 253, the heat generated by the light shielding layer pattern 253 absorbed by the light amount is reduced to a certain extent. The light transmissive substrate 251 is possible. Although a binary type reticle has been described as an example in this embodiment, even in the case of a phase shift type reticle, except that the phase shift layer pattern is used instead of the All the features are similar except that the light shielding layer pattern 253 is used.

Figure 11 is a plan view depicting a reticle in accordance with an embodiment. Figure 12 is a cross-sectional view taken along line II' of Figure 11 . Referring to FIGS. 11 and 12, a photomask 260 according to the present embodiment includes a light shielding layer pattern 263 which is disposed on a light transmissive substrate 261. In an embodiment, the light transmissive substrate 261 may be formed of a light transmissive material such as quartz. The transparent substrate 261 may have a light transmitting region 265 and a light shielding region 266. The surface of the light transmissive substrate 261 may be exposed in the light transmissive region 265. The light shielding layer pattern 263 may be disposed on the light transmissive substrate 261 in the light shielding region 266. In an embodiment, the light shielding layer pattern 263 may be formed of a light shielding material such as chromium (Cr). The light shielding layer pattern 263 may include a transfer pattern that transfers light to a wafer through an exposure process, and a cut line or light shielding layer pattern disposed in a frame region. Although the light shielding layer pattern 263 has a quadrangular shape in the present embodiment, other shapes or geometries such as a circular hole shape may also be used as the shielding layer pattern 263.

The light shielding layer pattern 263 may be formed to include an inner second light shielding layer pattern 263b, and a first light shielding layer pattern 263a surrounding the second light shielding layer pattern 263b. The first light shielding layer pattern 263a has a first thickness t1. The second light shielding layer pattern 263b has a second thickness t2 which is relatively thinner than the first thickness t1 of the first light shielding layer pattern 263a. The first thickness t1 of the first light shielding layer pattern 263a may be the thickness of a light shielding layer disposed in a blank mask. The second thickness t2 of the second light shielding layer pattern 263b may be a thickness reduced from a thickness of the light shielding layer disposed in the blank mask by a predetermined thickness. In an embodiment, the second thickness t2 of the second light shielding layer pattern 263b may be about 50% to about 90% of the first thickness t1 of the first light shielding layer pattern 263a. The thickness of the light shielding layer pattern 263 may determine or affect the amount of light transmitted through the light shielding layer pattern 263. Therefore, when the light shielding layer pattern 263 has a sufficient thickness, the amount of light transmitted through the light shielding layer pattern 263 may be small, and may increase as the thickness of the light shielding layer pattern 263 is reduced.

Therefore, in a case where the second thickness t2 of the second light shielding layer pattern 263b is too thin, for example, in which the second thickness t2 of the second light shielding layer pattern 263b is smaller than the first light shielding layer In the case of 50% of the first thickness t1 of the pattern 263a, the amount of light transmitted through the second light shielding layer pattern 263b is increased, and thus the second light shielding layer pattern 263b may not be transferred to a wafer .

In an embodiment, the first thickness t1 of the first light shielding layer pattern 263a may be a thickness that allows the light transmitted through the first light shielding layer pattern 263a to be about 4% to about 40% of the incident light. Furthermore, the second thickness t2 of the second light shielding layer pattern 263b may be a thickness that allows transmission of the second light shielding layer pattern 263b to be about 7% to about 60% of the incident light. degree.

Fig. 13 is a view for explaining the amount of light absorption in a state in which exposure is performed using the reticle of Figs. 11 and 12. In FIG. 13, the same component symbols as in FIGS. 11 and 12 refer to the same components. Referring to FIG. 13, since the first light shielding layer pattern 263a and the second light shielding layer pattern 263b are formed of the same material layer, they are irradiated to the first light shielding layer through the transparent substrate 261. The amount of light reflected from the first light shielding layer pattern 263a in the light 268 of the pattern 263a and the light 269 irradiated to the second light shielding layer pattern 263b through the light transmitting substrate 261 are from the The amount of light reflected by the second light shielding layer pattern 263b is substantially the same. In an embodiment, as shown in the drawing, from the first light shielding layer pattern 263a, the light 268 irradiated to the first light shielding layer pattern 263a through the light transmissive substrate 261 is The amount of reflected light and the amount of light reflected from the second light shielding layer pattern 263b in the light 269 irradiated to the second light shielding layer pattern 263b through the light transmitting substrate 261 may be about 24%. Conversely, since the first light shielding layer pattern 263a and the second light shielding layer pattern 263b have different thicknesses, the amount of light transmitted through the first light shielding layer pattern 263a and the second light shielding layer pattern 263b may be each other different.

For example, about 6% of the light amount corresponding to the light 268 irradiated to the first light shielding layer pattern 263a through the light transmissive substrate 261 is transmitted through the first light shielding layer pattern 263a, and thus is absorbed into the The amount of light in the first light shielding layer pattern 263a is about 70% of the illumination light 268. Approximately 26% of the light amount corresponding to the light 269 irradiated to the second light shielding layer pattern 263b through the transparent substrate 261 is transmitted through the second light shielding layer pattern 263b, and thus is absorbed to the second The amount of light in the light shielding layer pattern 263b is about 50% of the irradiation light 269. Therefore, in the second light shielding layer pattern 263b having a relatively thin second thickness t2 The amount of light absorption is reduced. Therefore, heat generated by absorption of the illumination light in the entire light shielding layer pattern 263 can be lowered. Such a light absorption amount distribution during the exposure process can be similarly applied to a phase shift mask in which a phase shift layer pattern is applied instead of the light shielding layer pattern 263.

Figure 14 is a plan view depicting a photoresist layer pattern formed by using the photomask of Figures 11 and 12 to perform a lithography process. Figure 15 is a cross-sectional view taken along line II-II' of Figure 14. Referring to Figures 14 and 15 together with Figures 11 and 12, a lithography process is directed to a photoresist layer, which is performed using the mask 260 of Figures 11 and 12, which is formed in a target The patterned layer 382 is formed on the substrate 381. In the case where the photoresist layer is a positive type, the photoresist layer is removed by development in a region 391 in which light transmitted through the light-transmitting region 265 is irradiated, and the photoresist layer pattern 383 is formed as the photoresist layer, which is not removed by development, but remains in the region 392 of the light shielding layer pattern 263 corresponding to the light shielding region 266. In other words, the photoresist layer pattern 383 is a pattern formed when the first light shielding layer pattern 263a and the second light shielding layer pattern 263b are transferred. Therefore, even if the light shielding layer pattern 263 is formed by the first light shielding layer pattern 263a and the second light shielding layer pattern 263b having different thicknesses, no effect is exerted on the light shielding layer pattern. 263 is transferred to the photoresist layer pattern 383 formed on the substrate 381. Therefore, by using a photomask according to another embodiment, the photoresist layer pattern 383 transferred by the light shielding layer pattern can be formed as described herein with reference to FIGS. 14 and 15.

Figure 16 is a plan view depicting a reticle in accordance with an embodiment. Figure 17 is a cross-sectional view taken along line III-III' of Figure 16 . 16 and 17, a type according to the embodiment The photomask 270 includes a light shielding layer pattern 273 which is disposed on a light transmissive substrate 271. In an embodiment, the light transmissive substrate 271 may be formed of a light transmissive material such as quartz. The reticle 270 can have a light transmissive region 275 and a light shielding region 276. The surface of the light transmissive substrate 271 may be exposed in the light transmissive region 275. The light shielding layer pattern 273 may be disposed on the light transmissive substrate 271 in the light shielding region 276. In an embodiment, the light shielding layer pattern 273 may be formed of a light shielding material such as chromium (Cr). In another embodiment, a phase shift layer pattern can be used instead of the light shielding layer pattern 273. The phase shift layer pattern may be formed of a phase shift material such as molybdenum tantalum (MoSi), a molybdenum tantalum nitride (MoSiN) or a tantalum oxide (SiO2).

In the illustrated embodiment, the light shielding region 276 becomes a phase shifting region. Although the light shielding layer pattern 273 has a quadrangular shape in this embodiment, other shapes or geometries such as a circular hole shape may also be used as the light shielding layer pattern 273.

The light shielding layer pattern 273 may be formed to include a first light shielding layer pattern 273a having a first thickness t3 and a second light shielding layer pattern 273b having a second thickness t4 smaller than the first thickness t3. The first light shielding layer pattern 273a and the second light shielding layer pattern 273b are formed of the same material layer. A plurality of second light shielding layer patterns 273b may be disposed in each of the light shielding regions 276. The individual second light shielding layer patterns 273b in each of the light shielding regions 276 may have a strip shape extending longitudinally in a direction such as a first direction. The individual second light shielding layer patterns 273b in each of the light shielding regions 276 may be disposed to be separated from each other by a predetermined gap in a second direction substantially perpendicular to the first direction.

In each of the light shielding regions 276, the first light shielding layer pattern 273a is disposed to surround the individual second light shielding layer patterns 273b. Therefore, the first light shielding The layer patterns 273a are disposed at both ends of the second light shielding layer pattern 273b in the first direction. In the second direction and in each of the light shielding regions 276, the first light shielding layer pattern 273a and the second light shielding layer pattern 273b are alternately disposed, but the first light shielding layer pattern 273a Is set at both ends. According to such a configuration of the light shielding layer pattern 273, the first light shielding layer pattern 273a having a relatively thick first thickness t3 may be disposed at the end of all adjacent light transmitting regions 275 of the light shielding layer pattern 273. It is thus possible to sufficiently ensure the amount of light transmission at the boundary between the light-transmitting region 275 and the light-shielding region 276 and the difference in the amount of shielding light.

The first thickness t3 of the first light shielding layer pattern 273a may be the thickness of a light shielding layer disposed in a blank mask. The second thickness t4 of the second light shielding layer pattern 273b may be a thickness reduced from a thickness of the light shielding layer disposed in the blank mask by a predetermined thickness. In an embodiment, the second thickness t4 of the second light shielding layer pattern 273b may be about 50% to about 90% of the first thickness t3 of the first light shielding layer pattern 273a. In a case where the second thickness t4 of the second light shielding layer pattern 273b is too thin, for example, in which the second thickness t4 of the second light shielding layer pattern 273b is smaller than the first light shielding layer pattern In the case of 50% of the first thickness t3 of 273a, the amount of light transmitted through the second light shielding layer pattern 273b is increased, and thus the second light shielding layer pattern 273b may not be transferred to a wafer. In an embodiment, the first thickness t3 of the first light shielding layer pattern 273a may be a transmittance that allows transmission of the light of the first light shielding layer pattern 273a to be about 4% to about 40% of the incident light. thickness of. Furthermore, the second thickness t4 of the second light shielding layer pattern 273b may be a thickness that allows transmission of light of the second light shielding layer pattern 273b to be about 7% to about 60% of incident light.

Figure 18 is an illustration in which the exposure is performed using the mask of Figures 16 and 17 A view of the amount of light absorbed in the condition. In FIG. 18, the same component symbols as in FIGS. 16 and 17 refer to the same components. Referring to FIG. 18, since the first light shielding layer pattern 273a and the second light shielding layer pattern 273b are formed of the same material layer, they are irradiated to the first light shielding layer through the light transmitting substrate 271. The amount of light reflected from the first light shielding layer pattern 273a in the light 278 of the pattern 273a and the light 279 irradiated to the second light shielding layer pattern 273b through the light transmitting substrate 271 are from the The amount of light reflected by the second light shielding layer pattern 273b is substantially the same as each other. Therefore, the amount of light reflected from the first light shielding layer pattern 273a in the light 278 irradiated to the first light shielding layer pattern 273a through the light transmitting substrate 271, and the light transmitting through the transparent substrate 271 The amount of light reflected from the second light shielding layer pattern 273b in the light 279 irradiated to the second light shielding layer pattern 273b may be about 24%.

Conversely, since the first light shielding layer pattern 273a and the second light shielding layer pattern 273b have different thicknesses, the amount of light transmitted through the first light shielding layer pattern 273a and the second light shielding layer pattern 273b may be each other different. For example, about 6% of the amount of light corresponding to the light 278 irradiated to the first light-shielding layer pattern 273a through the light-transmitting substrate 271 is transmitted through the first light-shielding layer pattern 273a, and thus is absorbed into the The amount of light in the first light shielding layer pattern 273a is about 70% of the irradiation light 278. On the contrary, about 26% of the light amount corresponding to the light 279 irradiated to the second light shielding layer pattern 273b through the light-transmitting substrate 271 is transmitted through the second light shielding layer pattern 273b, and thus is absorbed into the The amount of light in the second light shielding layer pattern 273b is about 50% of the irradiation light 279. Therefore, the amount of light absorption in the second light shielding layer pattern 273b having the relatively thin second thickness t4 is lowered, and thus the heat generated by the absorption of the irradiation light in the light shielding layer pattern 273 can be reduce.

19 is a plan view depicting a reticle in accordance with an embodiment. Figure 20 is along A cross-sectional view taken along line IV-IV' of Fig. 19. Referring to FIGS. 19 and 20, a photomask 280 according to the present embodiment includes a light shielding layer pattern 283 which is disposed on a light transmissive substrate 281. In an embodiment, the light transmissive substrate 281 may be formed of a light transmissive material such as quartz. The reticle 280 can have a light transmissive region 285 and a light shielding region 286. The surface of the light transmissive substrate 281 may be exposed in the light transmissive region 285. The light shielding layer pattern 283 may be disposed on the light transmissive substrate 281 in the light shielding region 286. In an embodiment, the light shielding layer pattern 283 may be formed of a light shielding material such as chromium (Cr). In another embodiment, a phase shift layer pattern formed of a phase shift material such as molybdenum ruthenium (MoSi) may be used instead of the light shield layer pattern 283. In this example, the light shielding region 286 becomes a phase shift region. Although the light shielding layer pattern 283 has a quadrangular shape in this embodiment, other shapes or geometries such as a circular hole shape may also be used for the light shielding layer pattern 283.

Each of the light shielding layer patterns 283 may have a plurality of trench segments 283a exposing the light transmissive substrate 281 therein. The individual groove segments 283a in each of the light shielding layer patterns 283 may have a strip shape extending longitudinally in a first direction, and may be disposed to be substantially perpendicular to the first direction In the two directions, a predetermined gap is separated from each other. Therefore, the light shielding layer pattern 283 and the groove portion 283a are alternately disposed in the second direction.

The width W1 of the trench segment 283a is such that the trench segment 283a itself is not transferred to a wafer in a lithography process, even if the surface of the transparent substrate 281 is The groove section 283a is exposed. The width W1 of the groove portion 283a of such a condition may be used in accordance with the size and thickness of the light shielding layer pattern 283, the wavelength of light used, A lighting system of the lithography apparatus, etc., is determined. Since the trench segment 283a itself is not transferred to a wafer in this manner in a lithography process, the pattern of the overall shape of the light shielding layer pattern 283 including the trench portion 283a can be Transfer to a wafer.

In the mask 280 according to the present embodiment, heat generated by the light energy absorbed by the light shielding layer pattern 283 may be exposed from the light shielding layer pattern 283 due to the presence of the groove section 283a. The surface is dissipated, so that the temperature rise due to the absorption of light energy in the lithographic process of the light-shielding layer pattern 283 can be suppressed. Furthermore, since the contact area between the light shielding layer pattern 283 and the light-transmitting substrate 281 is reduced by the area of the groove section 283a, heat generated by the light shielding layer pattern 283 is transferred. The phenomenon to the light-transmitting substrate 281 can be suppressed. Moreover, since the trench segment 283a induces light refraction through the trench segment 283a within a range that does not exert an influence on the patterning, it is to be transmitted through an adjacent light shielding layer pattern 283. Light can be compensated.

Although various embodiments have been described above, those skilled in the art will understand that the embodiments are merely exemplary. Thus, the blank masks and reticle described herein for suppressing heat absorption should not be limited to the described embodiments.

110‧‧‧ Blank mask

111‧‧‧Transparent substrate

112‧‧‧Highly reflective material layer

113‧‧‧Light shield

114‧‧‧Photoresist layer

Claims (23)

A blank reticle comprising: a light transmissive substrate; a highly reflective material layer disposed over the light transmissive substrate; and a light shielding layer disposed over the highly reflective material layer on. A blank mask according to claim 1, wherein the highly reflective material layer comprises bismuth (Si), molybdenum (Mo), tantalum (Ta), zirconium (Zr), aluminum (Al), titanium (Ti) Platinum (Pt), ruthenium (Ru), chromium (Cr), tin (Sn), or a combination thereof. A blank reticle according to claim 2, wherein the highly reflective material layer comprises oxygen (O), nitrogen (N), or both. A blank reticle according to claim 1 wherein said highly reflective material layer has a multilayer structure. A blank mask according to claim 4, wherein the multilayer structure comprises a structure in which a layer of molybdenum (Mo) and a layer of germanium (Si) are alternately disposed. A blank reticle according to claim 1 wherein said highly reflective material layer has a reflectance of from 20% to 90%. A blank reticle according to claim 1 wherein said highly reflective material layer has a thickness that is less than a thickness of said light shielding layer. A blank reticle according to claim 1, wherein the light shielding layer comprises a chromium (Cr) layer. A blank reticle according to the first aspect of the patent application, further comprising: a phase shifting layer disposed between the highly reflective material layer and the light shielding layer. A blank reticle according to claim 9 wherein said highly reflective material layer and said phase shifting layer have a transmittance equal to or less than 50% and a phase shift of from 150° to 250°. A blank reticle according to claim 1 of the patent application, further comprising: a photoresist layer disposed over the light shielding layer. A reticle comprising: a light transmissive substrate; and a light shielding layer pattern disposed on the light transmissive substrate for being transferred to a wafer during a lithography process, the light shielding layer Contains: a thick light shielding layer pattern; and a thin light shielding layer pattern. The photomask of claim 12, wherein the light transmissive substrate has a light transmissive region in which the light transmissive substrate is exposed and a light shielding region in which the light shielding layer pattern is disposed. A reticle according to claim 12, wherein the thin light shielding layer pattern is disposed in the light shielding region, and the thick light shielding layer pattern is disposed to be in the light shielding region Surrounding the second light shielding layer pattern. A reticle according to claim 12, wherein the thin light shielding layer pattern is disposed in the light shielding region and is longitudinally elongated in one direction. The reticle of claim 15, wherein the thin light shielding layer pattern comprises a plurality of second light shielding layer patterns disposed to be separated from each other in a second and different directions. A reticle according to claim 16 wherein said thick light shielding layer pattern is It is disposed at an edge along the circumference of the light shielding layer pattern. The reticle of claim 12, wherein a thickness of the thin light shielding layer pattern is 50% to 90% of a thickness of the thick light shielding layer pattern. The reticle of claim 12, wherein the thick light shielding layer pattern has a thickness that is allowed to be transmitted from about 4% to about 40% of light irradiated to the first light shielding layer pattern, and The thin light shielding layer pattern has a thickness that is allowed to be transmitted from about 7% to about 60% of the light that is irradiated to the second light shielding layer pattern. A reticle according to claim 12, wherein the thick light shielding layer pattern and the thin light shielding layer pattern have the same reflectance. A photomask comprising: a light transmissive substrate; and a light shielding layer pattern disposed on the light transmissive substrate to be transferred to a wafer during a lithography process, the light shielding layer pattern being Wherein there is a trench section exposing the light transmissive substrate. A reticle according to claim 21, wherein the groove section is defined to be elongated in a first direction and in a second direction substantially perpendicular to the first direction Separate from each other. The reticle of claim 22, wherein a width of the groove segment in the second direction is one to a degree that the groove segment is not transferred in a lithography process To the width of a wafer.