KR20120056924A - EUV photo mask - Google Patents

EUV photo mask Download PDF

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Publication number
KR20120056924A
KR20120056924A KR1020100088377A KR20100088377A KR20120056924A KR 20120056924 A KR20120056924 A KR 20120056924A KR 1020100088377 A KR1020100088377 A KR 1020100088377A KR 20100088377 A KR20100088377 A KR 20100088377A KR 20120056924 A KR20120056924 A KR 20120056924A
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KR
South Korea
Prior art keywords
layer
transparent substrate
reflective layer
exposure mask
layer provided
Prior art date
Application number
KR1020100088377A
Other languages
Korean (ko)
Inventor
현윤석
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020100088377A priority Critical patent/KR20120056924A/en
Publication of KR20120056924A publication Critical patent/KR20120056924A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The EUV exposure mask according to the first embodiment of the present invention includes a transparent substrate, a reflective layer provided on the transparent substrate, a buffer layer provided on the reflective layer, an absorbing layer provided on the buffer layer, and an upper portion of the absorbing layer. In addition, the anti-reflective layer provided in the boundary region is provided to minimize reflection of the pattern CD in the region adjacent to the exposure mask during the exposure process using the EUV exposure mask.

Description

EV exposure mask {EUV photo mask}

The present invention relates to an EUV exposure mask, and more particularly, to an EUV exposure mask that prevents reflection of a mask boundary region.

The development of photo-lithography technology as a result of higher integration of products has evolved into 436nm g-line, 365nm i-line, 248nm KrF and 193nm ArF to improve resolution. In addition, the development of structures such as phase shift blank masks has been made in the binary intensity mask. First, in the case of the binary intensity blank mask, a light blocking film, an antireflection film, and a resist film are sequentially formed on a transparent substrate. In the case of a phase inversion blank mask, a phase inversion film, a light blocking film, an antireflection film, and a resist film are formed on a transparent substrate.

Such a conventional binary and phase inverted blank mask has a function of transferring a pattern onto a wafer through light transmission and blocking, and a pattern having a resolution of 45 nm and 32 nm through the blank mask has ArF. Or through transmissive lithography techniques such as ArF immersion lithography and double patterning lithography (DPL).

However, the above-described ArF immersion lithography and double patterned lithography techniques require complex proximity effect correction (OPC) with low process constant k1 and problems such as defect problem, alignment error resolution and so on. Therefore, extreme ultraviolet lithography (EUVL) has emerged that can replace its technology and achieve finer minimum line widths.

Unlike the conventional transmissive lithography technology, the extreme ultraviolet lithography technology uses the reflective lithography method rather than the conventional transmissive lithography method because the 13.5 nm ultra-ultraviolet light does not transmit most materials constituting the photomask. do. Such a reflective lithography method requires a structure and characteristics different from that of a general transmissive lithography, and generally has a structure in which a reflective layer having a reflectance of 40% or more with respect to exposure light, an absorbing layer absorbing exposure light, and a resist film are formed on a substrate. .

1A to 1C are cross-sectional views illustrating a method of manufacturing an exposure mask according to the prior art.

As shown in FIG. 1A, a reflective layer 12 reflecting exposure light, a buffer layer 14, and an absorber 16 absorbing exposure light are formed on the transparent substrate 10. Next, as shown in FIG. 1B, a photoresist film (not shown) is formed on the absorber layer 16, and then the photoresist pattern 18 is formed by patterning the photoresist into a shape to be formed on the wafer using a mask.

1C, the absorber layer 16 and the buffer layer 14 are etched using the photoresist pattern 18 as an etch mask to form a buffer layer pattern 14a and an absorber layer pattern 16a serving as mask patterns. .

2 is a schematic view showing a position of an exposure mask shot exposed on a wafer.

In order to form a pattern on the wafer W, a plurality of exposure mask shots are made. Since a plurality of exposure mask shots are adjacent to each other, an area where the exposure process is performed and an area adjacent to the exposure process are performed (right enlarged view in FIG. 2). When the exposure process is performed again in the region indicated by the dotted line, the pattern of the region where the exposure process has been previously performed is affected. In particular, the EUV mask is patterned by using a reflective property, and there is a problem that the reflection occurs at the EUV mask boundary and affects the CD change of the pattern formed in the region adjacent thereto.

According to the present invention, there is a problem in that the reflection is made at the boundary of the EUV exposure mask during the exposure process using the EUV exposure mask, thereby affecting the CD change of the pattern in the region adjacent thereto.

The EUV exposure mask according to the first embodiment of the present invention includes a transparent substrate, a reflective layer provided on the transparent substrate, a buffer layer provided on the reflective layer, an absorbing layer provided on the buffer layer, and an upper portion of the absorbing layer. And an anti-reflection layer provided in the boundary region.

In addition, the reflective layer is characterized in that it comprises a multilayer structure.

In addition, the multilayer stack structure includes a structure in which two different layers are alternately stacked.

The two layers are characterized by comprising a silicon film and a molybdenum film.

An EUV exposure mask according to a second embodiment of the present invention includes a transparent substrate, a reflective layer provided on the transparent substrate, a buffer layer provided on the reflective layer, an absorbing layer provided on the buffer layer, the absorbing layer and the buffer layer. And an anti-reflection layer provided in the boundary area so that the reflective layer is etched to expose the transparent substrate.

In addition, the reflective layer is characterized in that it comprises a multilayer structure.

In addition, the multilayer stack structure includes a structure in which two different layers are alternately stacked.

The two layers are characterized by comprising a silicon film and a molybdenum film.

The present invention provides an effect of minimizing the change of the pattern CD in the area adjacent to the exposure mask by preventing reflection at the boundary of the exposure mask during the exposure process using the EUV exposure mask.

1A to 1C are cross-sectional views illustrating a method of manufacturing an exposure mask according to the prior art.
2 is a schematic diagram showing the position of an exposure mask shot exposed on a wafer;
3 shows an exposure mask according to a first embodiment of the present invention, (i) is a plan view, and (ii) is a sectional view taken along the line x-x '.
4 shows an exposure mask according to a second embodiment of the present invention, (i) is a plan view, and (ii) is a sectional view taken along the line x-x '.

Hereinafter, with reference to the accompanying drawings in accordance with an embodiment of the present invention will be described in detail.

3 shows an exposure mask according to a first embodiment of the present invention, (i) is a plan view, and (ii) is a cross-sectional view taken along the line x-x '.

As shown in FIG. 3, the exposure mask of the present invention includes a reflection layer 102 reflecting exposure light on the transparent substrate 100, a buffer layer 104, and an absorption layer 106 absorbing exposure light. and an absorber, and include a data area D provided at the center of the exposure mask and a boundary area E adjacent to the outer portion of the data area D. Here, the anti-reflection layer 108 is preferably provided in the boundary region E. In this case, the anti-reflection layer 108 is preferably formed by depositing on the absorbing layer 106.

In this case, the reflective layer 102 preferably includes a multilayer stack structure, and the multilayer stack structure includes a structure in which two different layers are alternately stacked, and the two layers include a silicon film and a molybdenum film. It is preferable.

The anti-reflection layer 106 serves to prevent the reflection of Extreme Ultaviolet (EUV) in the boundary region E during the exposure process. Therefore, during the exposure process, the patterning of the region where the exposure process is performed and the neighboring region is not influenced, that is, the EUV is reflected to the neighboring region during the exposure process, thereby affecting the previously formed pattern. You can fundamentally prevent changing CDs.

As described above, the anti-reflection layer 108, which serves to prevent the reflection of the EUV in the boundary region E, is not limited to the shape protruding above the absorbing layer 106, but may be changed.

4 shows an exposure mask according to a second embodiment of the present invention, (i) is a plan view, and (ii) is a cross-sectional view taken along the line x-x '.

As shown in FIG. 4, the exposure mask of the present invention includes a reflection layer 102 reflecting exposure light on the transparent substrate 100, a buffer layer 104, and an absorption layer 106 absorbing exposure light. and an absorber, and a data area D is provided at the center of the exposure mask, and a boundary area E is provided at the periphery of the exposure mask adjacent to the data area. Here, the anti-reflection layer 108a is provided in the boundary region E, and the anti-reflection layer 108a is preferably formed by etching the absorbing layer 106, the buffer layer 104, and the reflective layer 102.

In this case, the reflective layer 102 preferably includes a multilayer stack structure, and the multilayer stack structure includes a structure in which two different layers are alternately stacked, and the two layers include a silicon film and a molybdenum film. It is preferable.

The anti-reflection layer 108a is provided to expose the transparent substrate 100 by etching the absorbing layer 106, the buffer layer 104, and the reflective layer 102. Even though the EUV enters the exposure mask, the EUV reaches the transparent substrate 100. It is not reflected. Therefore, it is possible to prevent the EUV from being reflected in the boundary region E, thereby changing the CD by influencing the existing pattern by reflecting the EUV to a neighboring region during the exposure process.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined by the appended claims. Of the present invention.

Claims (6)

A transparent substrate including a data area provided at a central portion and a boundary area adjacent to an outer portion of the data area;
A reflective layer provided on the transparent substrate;
A buffer layer provided on the reflective layer;
An absorbing layer provided on the buffer layer; And
And an anti-reflection layer provided on the absorbing layer and disposed in the boundary area. The method according to claim 2,
The reflective layer is EUV exposure mask, characterized in that it comprises a structure in which two different layers are alternately stacked. The method according to claim 2,
Wherein said two different layers comprise a silicon film and a molybdenum film. A transparent substrate including a data area provided at a central portion and a boundary area adjacent to an outer portion of the data area;
A reflective layer provided on the transparent substrate;
A buffer layer provided on the reflective layer;
An absorbing layer provided on the buffer layer; And
And an anti-reflection layer provided in the boundary region so that the absorbing layer, the buffer layer, and the reflective layer are etched to expose the transparent substrate. The method of claim 4,
The reflective layer
An EUV exposure mask comprising a structure in which two different layers are alternately stacked. The method of claim 4,
Wherein said two different layers comprise a silicon film and a molybdenum film.
KR1020100088377A 2010-09-09 2010-09-09 EUV photo mask KR20120056924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100088377A KR20120056924A (en) 2010-09-09 2010-09-09 EUV photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100088377A KR20120056924A (en) 2010-09-09 2010-09-09 EUV photo mask

Publications (1)

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KR20120056924A true KR20120056924A (en) 2012-06-05

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KR1020100088377A KR20120056924A (en) 2010-09-09 2010-09-09 EUV photo mask

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