TW201531645A - Light-emitting device and method of making the same - Google Patents

Light-emitting device and method of making the same Download PDF

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Publication number
TW201531645A
TW201531645A TW103104513A TW103104513A TW201531645A TW 201531645 A TW201531645 A TW 201531645A TW 103104513 A TW103104513 A TW 103104513A TW 103104513 A TW103104513 A TW 103104513A TW 201531645 A TW201531645 A TW 201531645A
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TW
Taiwan
Prior art keywords
light
bracket
emitting
extension
carrier
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TW103104513A
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Chinese (zh)
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TWI601909B (en
Inventor
Tzer-Perng Chen
Min-Hsun Hsieh
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Epistar Corp
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Priority to TW103104513A priority Critical patent/TWI601909B/en
Priority to CN201510049731.XA priority patent/CN104835897B/en
Priority to CN202011293806.6A priority patent/CN112563385A/en
Publication of TW201531645A publication Critical patent/TW201531645A/en
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Publication of TWI601909B publication Critical patent/TWI601909B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/13Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]

Abstract

A method of making a light-emitting device comprises: providing a plurality of physically separated supports; providing a first light-emitting unit and a second light-emitting unit respectively mounting on the supports; and changing a relative position between the first light-emitting unit and the second light-emitting unit such that the first light-emitting unit and the second light-emitting unit are substantially not arranged along a line.

Description

發光裝置及其製造方法 Light emitting device and method of manufacturing same

本發明係關於一種發光裝置之製造方法。 The present invention relates to a method of fabricating a light emitting device.

發光二極體(light-emitting diode;LED)具有耗能低、低發熱、操作壽命長、防震、體積小、反應速度快以及輸出的光波長穩定等良好光電特性,因此發光二極體慢慢地取代傳統之照明產品。隨著光電科技的發展,固態照明在照明效率、操作壽命以及亮度等方面有顯著的進步,因此近年來發光二極體已經被應用於一般的家用照明上。目前,發光二極體燈泡之成本仍高於傳統之白熾燈泡,該如何降低發光二極體燈泡之製作成本,仍是一個重要的議題。 Light-emitting diode (LED) has good photoelectric characteristics such as low energy consumption, low heat generation, long operating life, shock resistance, small volume, fast response speed, and stable wavelength of output light, so the light-emitting diode is slowly Replace the traditional lighting products. With the development of optoelectronic technology, solid-state lighting has made significant progress in lighting efficiency, operating life and brightness. Therefore, in recent years, light-emitting diodes have been applied to general household lighting. At present, the cost of a light-emitting diode bulb is still higher than that of a conventional incandescent light bulb, and how to reduce the manufacturing cost of the light-emitting diode bulb is still an important issue.

因此,本發明係關於一種製造發光裝置之方法。 Accordingly, the present invention is directed to a method of fabricating a light emitting device.

製造發光裝置之方法,包含:提供複數個物理性相分離之支撐體;提供一第一發光元件及一第二發光元件,係分別固定於支撐體上;以及改變第一發光元件與第二發光元件之相對位置使第一發光元件與第二發光元件實質上不位於同一直線上。 A method for manufacturing a light-emitting device, comprising: providing a plurality of physically separated support bodies; providing a first light-emitting element and a second light-emitting element, respectively, being fixed on the support; and changing the first light-emitting element and the second light-emitting The relative positions of the elements are such that the first illuminating element and the second illuminating element are not substantially in line.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下 The above and other objects, features, and advantages of the present invention will become more apparent and understood.

10、21‧‧‧載具 10, 21‧‧‧ Vehicles

100、200、300、400、500、600、700、800、900、1000、1100‧‧‧發光裝置 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100‧‧‧ illuminating devices

101‧‧‧支撐支架 101‧‧‧Support bracket

102、102A、102B、102C、102D‧‧‧延伸支架 102, 102A, 102B, 102C, 102D‧‧‧ extended bracket

1021‧‧‧第一區域 1021‧‧‧First area

1022‧‧‧第二區域 1022‧‧‧Second area

1023‧‧‧孔洞 1023‧‧‧ hole

1025‧‧‧接觸部分 1025‧‧‧Contact section

103‧‧‧連接支架 103‧‧‧Connecting bracket

104‧‧‧中間支架 104‧‧‧ intermediate bracket

11‧‧‧第一發光群組 11‧‧‧First lighting group

12‧‧‧第二發光群組 12‧‧‧Second lighting group

111、111A、121、121A‧‧‧發光單元 111, 111A, 121, 121A‧‧‧ lighting unit

20、20A、20B、20C、20D、20E、20F‧‧‧發光元件 20, 20A, 20B, 20C, 20D, 20E, 20F‧‧‧ light-emitting elements

201、7000‧‧‧基板 201, 7000‧‧‧ substrate

202‧‧‧發光單元 202‧‧‧Lighting unit

2021、7001‧‧‧第一型半導體層 2021, 7001‧‧‧ first type semiconductor layer

2022、7002‧‧‧活性層 2022, 7002‧‧‧ active layer

2023、7003‧‧‧第二型半導體層 2023, 7003‧‧‧ second type semiconductor layer

203‧‧‧電極墊 203‧‧‧electrode pad

204‧‧‧電連接結構 204‧‧‧Electrical connection structure

205‧‧‧絕緣結構 205‧‧‧Insulation structure

221‧‧‧圖案化晶種層 221‧‧‧ patterned seed layer

2211‧‧‧第一區域 2211‧‧‧First area

2212‧‧‧第二區域 2212‧‧‧Second area

2213‧‧‧第三區域 2213‧‧‧ Third Area

222‧‧‧圖案化金屬層 222‧‧‧ patterned metal layer

222A、222B‧‧‧金屬層 222A, 222B‧‧‧ metal layer

2221‧‧‧第一區域 2221‧‧‧First area

2222‧‧‧第二區域 2222‧‧‧Second area

2223‧‧‧第三區域 2223‧‧‧ third area

211‧‧‧第一載具部 211‧‧‧First Vehicle Division

2111‧‧‧第一表面 2111‧‧‧ first surface

2112‧‧‧第二表面 2112‧‧‧ second surface

212‧‧‧第二載具部 212‧‧‧The Second Vehicle Division

2121‧‧‧第三表面 2121‧‧‧ third surface

2122‧‧‧第四表面 2122‧‧‧ fourth surface

23‧‧‧導電件 23‧‧‧Electrical parts

30‧‧‧第一包覆結構 30‧‧‧First cladding structure

301、401‧‧‧突出部 301, 401‧‧ ‧ protruding parts

40‧‧‧第二包覆結構 40‧‧‧Second cladding structure

7004‧‧‧第一導電部 7004‧‧‧First Conductive Department

7005‧‧‧第二導電部 7005‧‧‧Second Conductive Department

70041、70051‧‧‧電極接觸面 70041, 70051‧‧‧electrode contact surface

7006‧‧‧保護層 7006‧‧‧Protective layer

7008‧‧‧孔隙 7008‧‧‧ pores

7015‧‧‧導線結構 7015‧‧‧Wire structure

7024‧‧‧第一擴大電極部 7024‧‧‧First enlarged electrode

7025‧‧‧第二擴大電極部 7025‧‧‧Second enlarged electrode

7026‧‧‧第一透明結構 7026‧‧‧ first transparent structure

7027‧‧‧第二透明結構 7027‧‧‧Second transparent structure

70241、70251、70061、70062‧‧‧側邊 70241, 70251, 70061, 70062‧‧‧ side

80‧‧‧基座 80‧‧‧Base

81‧‧‧凹槽 81‧‧‧ Groove

90、901‧‧‧燈殼 90, 901‧‧ ‧ lamp shell

902、91‧‧‧導線支架 902, 91‧‧‧ wire bracket

903‧‧‧基座 903‧‧‧Base

904、92‧‧‧電連接件 904, 92‧‧‧ electrical connectors

第1A~1D圖顯示本發明之第一實施例中一發光裝置之製造流程圖。 1A to 1D are views showing a manufacturing flow chart of a light-emitting device in the first embodiment of the present invention.

第2A~2E圖顯示本發明之第二實施例中一發光裝置之製造流程圖。 2A to 2E are views showing a manufacturing flow chart of a light-emitting device in the second embodiment of the present invention.

第2F圖顯示本發明之另一實施例中一發光裝置之示意圖。 Fig. 2F is a view showing a light-emitting device in another embodiment of the present invention.

第2G圖顯示本發明之另一實施例中一發光裝置之示意圖。 Fig. 2G is a view showing a light-emitting device in another embodiment of the present invention.

第3A~3B圖顯示一發光元件設置在兩延伸支架間之製造流程剖面圖。 3A-3B are cross-sectional views showing a manufacturing process in which a light-emitting element is disposed between two extended brackets.

第3C圖顯示本發明之另一實施例中一發光元件設置在兩延伸支架間之剖面圖。 Fig. 3C is a cross-sectional view showing a light-emitting element disposed between two extending brackets in another embodiment of the present invention.

第3D圖顯示本發明之另一實施例中一發光元件設置在兩延伸支架間之剖面圖。 Fig. 3D is a cross-sectional view showing a light-emitting element disposed between two extending brackets in another embodiment of the present invention.

第3E圖顯示本發明之另一實施例中一發光元件設置在兩延伸支架間之剖面圖。 Fig. 3E is a cross-sectional view showing a light-emitting element disposed between two extending brackets in another embodiment of the present invention.

第4A~4B圖顯示本發明之第三實施例中一發光裝置之製造流程圖。 4A to 4B are views showing a manufacturing flow chart of a light-emitting device in a third embodiment of the present invention.

第4C圖顯示本發明之第三實施例中一發光裝置之示意圖。 Fig. 4C is a view showing a light-emitting device in the third embodiment of the present invention.

第4D圖顯示本發明之另一實施例中一發光裝置之示意圖。 Fig. 4D is a view showing a light-emitting device in another embodiment of the present invention.

第4E圖顯示第4D圖之發光裝置設置於一燈泡內之示意圖。 Fig. 4E is a view showing the light-emitting device of Fig. 4D disposed in a bulb.

第5A圖顯示本發明之第四實施例中發光元件固定於載具上之示意圖。 Fig. 5A is a view showing the light-emitting element fixed to the carrier in the fourth embodiment of the present invention.

第5B圖顯示本發明之第五實施例中發光元件固定於載具上之示意圖。 Fig. 5B is a view showing the light-emitting element fixed to the carrier in the fifth embodiment of the present invention.

第5C圖顯示本發明之第六實施例中發光元件固定於載具上之示意圖。 Fig. 5C is a view showing the light-emitting element fixed to the carrier in the sixth embodiment of the present invention.

第5D圖顯示本發明之第六實施例中一發光裝置之示意圖。 Fig. 5D is a view showing a light-emitting device in a sixth embodiment of the present invention.

第6A圖顯示本發明之第七實施例中發光元件固定於載 具上之示意圖。 FIG. 6A is a view showing the light-emitting element fixed in the seventh embodiment of the present invention; Have a schematic diagram.

第6B圖顯示本發明之第七實施例中發光裝置之示意圖。 Fig. 6B is a view showing a light-emitting device in a seventh embodiment of the present invention.

第6C圖顯示第6B圖之發光裝置設置於一燈泡內之示意圖。 Fig. 6C is a view showing the light-emitting device of Fig. 6B disposed in a bulb.

第6D圖為一電路示意圖。 Figure 6D is a schematic diagram of a circuit.

第6E圖為另一電路示意圖。 Figure 6E is a schematic diagram of another circuit.

第6F圖顯示本發明之第八實施例發光元件固定於載具上之示意圖。 Fig. 6F is a view showing the light-emitting element of the eighth embodiment of the present invention fixed to a carrier.

第6G圖顯示第6F圖之發光裝置設置於一燈泡內之示意圖。 Fig. 6G is a view showing the arrangement of the light-emitting device of Fig. 6F in a bulb.

第7A~7B圖顯示本發明之第九實施例中一發光裝置之部分製造流程剖面圖。 7A to 7B are cross-sectional views showing a part of the manufacturing process of a light-emitting device in a ninth embodiment of the present invention.

第8圖顯示本發明之第十實施例中發光元件固定於載具上之示意圖。 Fig. 8 is a view showing the light-emitting element fixed to the carrier in the tenth embodiment of the present invention.

第9A~9F圖顯示本發明之第十一實施例中一發光裝置之製造流程剖面圖。 9A to 9F are cross-sectional views showing the manufacturing process of a light-emitting device in an eleventh embodiment of the present invention.

第9G圖顯示第十一實施例中發光裝置接合於一基座上。 Fig. 9G shows that the light-emitting device of the eleventh embodiment is bonded to a susceptor.

第10A~10C圖顯示金屬層之上視圖。 Figures 10A-10C show a top view of the metal layer.

第11A~11D圖顯示本發明之第十二實施例中一發光裝置之製造流程剖面圖。 11A to 11D are cross-sectional views showing the manufacturing process of a light-emitting device in a twelfth embodiment of the present invention.

第12A~12C圖顯示本發明之中發光單元之剖面圖。 12A to 12C are cross-sectional views showing the light-emitting unit of the present invention.

以下實施例將伴隨著圖式說明本發明之概念,在圖式或說明中,相似或相同之部分係使用相同之標號,並且在圖式中,元件之形狀或厚度可擴大或縮小。需特別注意的是,圖中未繪示或描述之元件,可以是熟習此技藝之人士所知之形式。 The present invention will be described with reference to the drawings, in which the same or the same reference numerals are used in the drawings or the description, and in the drawings, the shape or thickness of the elements may be enlarged or reduced. It is to be noted that elements not shown or described in the figures may be in a form known to those skilled in the art.

第1A~1D圖顯示本發明之第一實施例中一發光裝置100 之製造流程圖。參照第1A圖,提供一載具10及複數個發光元件20。載具10包含一對支撐支架101及複數對延伸支架102,每一對延伸支架102係彼此平行排列且與支撐支架101彼此物理性連接。複數個發光元件20係分別放置並固定於每對延伸支架102上且發光元件20具有一大於延伸支架102之寬度。當然,根據實際的設計應用,發光元件20可具有小於或等於延伸支架102之寬度。延伸支架102係作為一支撐體以支撐發光元件20。參照第1B圖,形成一第一包覆結構30於發光元件20及部分延伸支架102上以完全地覆蓋並包覆發光元件20。部分延伸支架102係未被第一包覆結構30所包覆或覆蓋而曝露於外界環境(例如:空氣)。參照第1C圖,形成一第二包覆結構40於第一包覆結構30上且完全地覆蓋並包覆第一包覆結構30以提供進一步保護(例如:可以防水氣或防塵)。參照第1D圖所示,分離延伸支架102及支撐支架101以形成發光裝置100。在本實施例中,發光裝置100僅包含一對延伸支架102及一發光元件20。需注意的是,延伸支架102及發光元件20可隨發光裝置100長度之實際需求所調整,例如:發光元件20之長度為1公分且當發光元件20設置在延伸支架102之上時,設計延伸支架102之長度使發光裝置總長為4公分;或者發光元件20為0.5公分時,增長延伸支架102之長度使發光裝置總長仍為4公分;或者發光元件20為3公分時,設計延伸支架102之長度使發光裝置總長為4公分。在一實施例中,基板為長條狀且具有一長度及一寬度;長度至少為寬度之10倍以上。需注意的是,上述發光裝置總長為4公分僅作為例示而非用來限制本發明。 1A to 1D are diagrams showing a light-emitting device 100 in the first embodiment of the present invention. Manufacturing flow chart. Referring to Fig. 1A, a carrier 10 and a plurality of light emitting elements 20 are provided. The carrier 10 includes a pair of support brackets 101 and a plurality of pairs of extension brackets 102, each pair of extension brackets 102 being arranged in parallel with each other and physically connected to the support brackets 101. A plurality of light-emitting elements 20 are respectively placed and fixed on each pair of extension brackets 102 and the light-emitting elements 20 have a width greater than that of the extension brackets 102. Of course, the light-emitting element 20 can have a width less than or equal to the width of the extension bracket 102, depending on the actual design application. The extension bracket 102 serves as a support to support the light emitting element 20. Referring to FIG. 1B, a first cladding structure 30 is formed on the light-emitting element 20 and the partial extension bracket 102 to completely cover and cover the light-emitting element 20. The partially extended bracket 102 is not covered or covered by the first covering structure 30 and exposed to the external environment (for example, air). Referring to FIG. 1C, a second cladding structure 40 is formed on the first cladding structure 30 and completely covers and covers the first cladding structure 30 to provide further protection (eg, water or dust). Referring to FIG. 1D, the extension bracket 102 and the support bracket 101 are separated to form the light-emitting device 100. In the present embodiment, the light emitting device 100 includes only a pair of extension brackets 102 and a light emitting element 20. It should be noted that the extension bracket 102 and the light-emitting element 20 can be adjusted according to the actual needs of the length of the light-emitting device 100. For example, the length of the light-emitting element 20 is 1 cm and when the light-emitting element 20 is disposed on the extension bracket 102, the design extension The length of the bracket 102 is such that the total length of the light-emitting device is 4 cm; or when the light-emitting element 20 is 0.5 cm, the length of the extension bracket 102 is increased so that the total length of the light-emitting device is still 4 cm; or when the light-emitting element 20 is 3 cm, the extension bracket 102 is designed. The length allows the total length of the illuminating device to be 4 cm. In one embodiment, the substrate is elongated and has a length and a width; the length is at least 10 times greater than the width. It should be noted that the total length of the above-mentioned illuminating device is 4 cm, which is only an illustration and is not intended to limit the present invention.

第2A~2D圖顯示本發明之第二實施例中一發光裝置200之製造流程圖。參照第2A圖,提供一載具10及複數個發光元件20。載具10包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102,複數個發光元件20係分別放置於兩延伸支架102間且固定於兩延伸支架102上(本實施例中,每一延伸支架組包含五個延伸支架,且四個發光元件設置在延伸支架上)。發光元件 20藉由延伸支架102彼此串聯電性連接。延伸支架102係作為一支撐體以支撐發光元件20且發光元件20彼此排列於同一直線上。參照第2B圖所示,形成第一包覆結構30於複數個發光元件20及部分延伸支架102上以完全地覆蓋並包覆發光元件20。部分延伸支架102係未被第一包覆結構30所包覆或覆蓋而曝露於外界環境(例如:空氣)。參照第2C圖,形成第二包覆結構40於第一包覆結構30且完全地覆蓋並包覆第一包覆結構30以提供進一步保護。參照第2D圖所示,分離每一延伸支架組之相對兩端的延伸支架102A及支撐支架101以形成發光裝置200。每一延伸支架組中,不與支撐支架101相連結之延伸支架102B與固定其上之發光元件20彼此連結且不分離。參照第2E圖所示,彎折延伸支架102B形成一角度(θ1為銳角)於發光元件20之間,藉此,形成一具有M型結構之發光裝置200且發光元件20排列於非同一直線上。需注意的是,如第2E圖所示,發光元件20彼此實質上係位於同一平面,且具有發光單元(請參第3A圖)之一側皆朝向同一方向。 於其他實施例中,可彎折延伸支架102B使發光元件20彼此位於不同平面(請參第2F圖),且具有發光單元之一側可朝向不同方向。如第2G圖所示,發光裝置200亦可具有菱形(θ2為銳角以及θ3鈍角)或其他形狀。同樣地,被彎折之延伸支架102B及部分延伸支架102A亦係未被第一包覆結構30及第二包覆結構40所包覆或覆蓋而曝露於外界環境(例如:空氣)。延伸支架102與發光元件20的數目可依實際需求或依照所需之形狀而增加或減少。支撐支架及延伸支架包含可彎折、可饒性、可延展、可形變之金屬。支撐支架之材料與延伸支架之材料可相同或相異。在本實施例中,支撐支架係用以支撐延伸支架,且僅彎折延伸支架,因此支撐支架之延展性可低於延伸支架。支撐支架之材料可包含銅、金、鉑、銀、鋼、鐵、鋁或其合金。延伸支架之材料可包含銅、金、鉑、銀、鋁或其合金。一般來說,可彎折或可延展之金屬材料之晶格係屬於面心立方晶格(FCC);較不可彎折或較不可延展之金屬材料之晶格係屬於密排六方晶格(HCP)。 2A to 2D are views showing a manufacturing flow chart of a light-emitting device 200 in the second embodiment of the present invention. Referring to Figure 2A, a carrier 10 and a plurality of light-emitting elements 20 are provided. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended bracket sets includes a plurality of extending brackets 102. The plurality of light emitting elements 20 are respectively placed between the two extending brackets 102 and fixed to the two extending brackets 102. In this embodiment, each of the extended bracket sets includes five extending brackets. And four light emitting elements are disposed on the extension bracket). The light emitting elements 20 are electrically connected to each other in series by the extension brackets 102. The extension bracket 102 serves as a support to support the light-emitting elements 20 and the light-emitting elements 20 are arranged on the same line with each other. Referring to FIG. 2B, the first cladding structure 30 is formed on the plurality of light emitting elements 20 and the partial extension brackets 102 to completely cover and cover the light emitting elements 20. The partially extended bracket 102 is not covered or covered by the first covering structure 30 and exposed to the external environment (for example, air). Referring to FIG. 2C, a second cladding structure 40 is formed on the first cladding structure 30 and completely covers and covers the first cladding structure 30 to provide further protection. Referring to FIG. 2D, the extension brackets 102A and the support brackets 101 at opposite ends of each of the extension bracket groups are separated to form the light-emitting device 200. In each of the extended bracket groups, the extension brackets 102B that are not coupled to the support brackets 101 and the light-emitting elements 20 fixed thereto are coupled to each other and are not separated. Referring to FIG. 2E, the bent extension bracket 102B forms an angle (θ 1 is an acute angle) between the light-emitting elements 20, whereby a light-emitting device 200 having an M-type structure is formed and the light-emitting elements 20 are arranged in a non-identical straight line. on-line. It should be noted that, as shown in FIG. 2E, the light-emitting elements 20 are substantially in the same plane, and one side of the light-emitting unit (see FIG. 3A) faces in the same direction. In other embodiments, the bendable extension bracket 102B positions the light emitting elements 20 in different planes from each other (see FIG. 2F), and one side of the light emitting unit can face in different directions. As shown in FIG. 2G, the light-emitting device 200 may have a diamond shape (θ 2 is an acute angle and an θ 3 obtuse angle) or other shapes. Similarly, the bent extension bracket 102B and the partial extension bracket 102A are also not covered or covered by the first cladding structure 30 and the second cladding structure 40 to be exposed to the external environment (for example, air). The number of extension brackets 102 and light-emitting elements 20 can be increased or decreased depending on actual needs or according to the desired shape. The support bracket and the extension bracket comprise a bendable, malleable, malleable, deformable metal. The material of the support bracket may be the same or different from the material of the extension bracket. In this embodiment, the support bracket is used to support the extension bracket, and only the extension bracket is bent, so the support bracket may have lower ductility than the extension bracket. The material of the support bracket may comprise copper, gold, platinum, silver, steel, iron, aluminum or alloys thereof. The material of the extension bracket may comprise copper, gold, platinum, silver, aluminum or alloys thereof. In general, the lattice of a bendable or ductile metal material belongs to a face-centered cubic lattice (FCC); the lattice of a metal material that is less bendable or less ductile is a close-packed hexagonal lattice (HCP) ).

在第2A圖中,因每一延伸支架組之延伸支架102彼此 不相連,因此載具10設置於一載板(圖未示)上,以使支撐支架101及延伸支架102可固定於載板上。接著,再固定發光元件20於延伸支架102上。或者,載板具有複數個凹槽以設置支撐支架101及延伸支架102於其內。固定發光元件20於延伸支架102上後,移除載板。之後,形成第一包覆結構及/或第二包覆結構(第2B圖及第2C圖)。第一包覆結構及第二包覆結構可利用點膠、噴塗或鑄模(例如:射出鑄模或擠壓鑄模)等方式而形成。 In FIG. 2A, the extension brackets 102 of each of the extended bracket groups are mutually Not connected, the carrier 10 is disposed on a carrier (not shown) such that the support bracket 101 and the extension bracket 102 can be fixed to the carrier. Next, the light-emitting element 20 is fixed to the extension bracket 102. Alternatively, the carrier has a plurality of recesses to define the support bracket 101 and the extension bracket 102 therein. After the light-emitting element 20 is fixed on the extension bracket 102, the carrier board is removed. Thereafter, a first cladding structure and/or a second cladding structure (Fig. 2B and Fig. 2C) are formed. The first cladding structure and the second cladding structure may be formed by dispensing, spraying, or molding (for example, injection molding or extrusion molding).

第3A~3B圖僅例示一發光元件20設置在兩延伸支架102 間。參照第3A圖所示,發光元件20包含基板201;複數個發光單元202形成在基板201上;及兩電極墊203,形成在基板201之兩端且與複數個發光單元202形成電連接。每一發光單元202包含一第一型半導體層2021、一活性層2022、及一第二型半導體層2023,第一型半導體層2021及第二型半導體層2023例如為包覆層(cladding layer)或限制層(confinement layer),可分別提供電子、電洞,使電子、電洞於活性層2022中結合以發光。 在此實施例中,基板201為成長基板且複數個發光單元202共同磊晶形成在基板201上。發光元件20更包含一電連接結構204形成在基板201上;及一絕緣結構205形成在電連接結構204與發光單元202與基板201之間。電連接結構204電連接發光單元202及電極墊203,藉此彼此串聯連接。在另一實施例中,發光單元202彼此可並聯、反向並聯、或以橋式結構而形成電連接。注意的是,每一發光單元202可各自形成正負電極(圖未示),且藉由電連接結構204連接每一發光單元202之正負電極以彼此串聯連接。電極墊203與延伸支架102可利用焊接製程(soldering process)或黏著製程(adhesive process)彼此固定並完成電連接。於焊接製程時,電極墊203之材料可為合金(alloy)、金屬(metal)或焊料(solder),且藉由一共晶焊接(eutectic soldering)製程將發光元件20與延伸支架102相連接。於黏著製程時,可於電極墊203與延伸支架102間形成一粘著劑,例如膏狀形式或薄膜形式的異向性導電膠(anisotropically conductive adhesive;ACA),即異方性導電膜(anisotropically conductive film;ACF),在結合壓力和熱的共同作用 下,完成電性連結,並使粘著劑永久地固化(cure)及熱穩定。粘著劑亦包含銀膠或錫膏。在一實施例中,發光單元202可利用一接合層固定在基板201上以形成發光元件20。第一型半導體層2021、一活性層2022、及一第二型半導體層2023之材料可包含Ⅲ-V族半導體材料,例如AlxInyGa(1-x-y)N或AlxInyGa(1-x-y)P,其中0≦x,y≦1;(x+y)≦1。依據活性層2022之材料,發光元件20可發出波長介於610nm及650nm之間的紅光,波長介於530nm及570nm之間的綠光,或是波長介於450nm及490nm之間的藍光。形成第一型半導體層2021、一活性層2022、及一第二型半導體層2023的方法沒有特別限制,除了有機金屬化學氣相沉積法(MOCVD),亦可使用分子束磊晶(MBE)、氫化物氣相沉積法(HVPE)、蒸鍍法或離子電鍍方法。 3A-3B only illustrate that a light-emitting element 20 is disposed between the two extension brackets 102. Referring to FIG. 3A, the light-emitting element 20 includes a substrate 201; a plurality of light-emitting units 202 are formed on the substrate 201; and two electrode pads 203 are formed at both ends of the substrate 201 and electrically connected to the plurality of light-emitting units 202. Each of the light emitting units 202 includes a first type semiconductor layer 2021, an active layer 2022, and a second type semiconductor layer 2023. The first type semiconductor layer 2021 and the second type semiconductor layer 2023 are, for example, a cladding layer. Or a confinement layer, which can respectively provide electrons and holes to combine electrons and holes in the active layer 2022 to emit light. In this embodiment, the substrate 201 is a growth substrate and a plurality of light emitting units 202 are collectively epitaxially formed on the substrate 201. The light emitting element 20 further includes an electrical connection structure 204 formed on the substrate 201; and an insulating structure 205 is formed between the electrical connection structure 204 and the light emitting unit 202 and the substrate 201. The electrical connection structure 204 electrically connects the light emitting unit 202 and the electrode pad 203, thereby being connected to each other in series. In another embodiment, the light emitting units 202 can be electrically connected in parallel, in anti-parallel, or in a bridge configuration. It is noted that each of the light emitting units 202 may form a positive and negative electrode (not shown), and the positive and negative electrodes of each of the light emitting units 202 are connected by an electrical connection structure 204 to be connected in series to each other. The electrode pad 203 and the extension bracket 102 may be fixed to each other and electrically connected by a soldering process or an adhesive process. In the soldering process, the material of the electrode pad 203 may be an alloy, a metal or a solder, and the light-emitting element 20 is connected to the extension bracket 102 by a eutectic soldering process. During the adhesive process, an adhesive may be formed between the electrode pad 203 and the extension support 102, such as an anisotropically conductive adhesive (ACA) in the form of a paste or a film, that is, an anisotropically conductive film (anisotropically conductive film). Conductive film (ACF), in combination with pressure and heat, completes electrical bonding and permanently cures and thermally stabilizes the adhesive. The adhesive also contains silver paste or solder paste. In an embodiment, the light emitting unit 202 can be fixed on the substrate 201 with a bonding layer to form the light emitting element 20. The material of the first type semiconductor layer 2021, the active layer 2022, and the second type semiconductor layer 2023 may comprise a group III-V semiconductor material such as Al x In y Ga (1-xy) N or Al x In y Ga ( 1-xy) P, where 0≦x, y≦1; (x+y)≦1. Depending on the material of the active layer 2022, the light-emitting element 20 can emit red light having a wavelength between 610 nm and 650 nm, green light having a wavelength between 530 nm and 570 nm, or blue light having a wavelength between 450 nm and 490 nm. The method of forming the first type semiconductor layer 2021, the active layer 2022, and the second type semiconductor layer 2023 is not particularly limited, and in addition to the metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) may also be used. Hydride vapor phase deposition (HVPE), evaporation or ion plating.

參照第3A圖所示,第一包覆結構30完全地包覆發光元 件20並覆蓋部分之延伸支架102,藉此發光元件20中並未被曝露出且未與外界環境(空氣)接觸。此外,第一包覆結構30係直接接觸成長基板201。參照第3B圖,第二包覆結構40亦完全地包覆第一包覆結構30且覆蓋部分之延伸支架102以提供進一步保護。第一包覆結構30或/及第二包覆結構40可包含波長轉換材料、擴散粉、散熱粒子或其組合。當第二包覆結構40含有波長轉換材料時,可進一步形成一第三包覆結構包覆第二包覆結構40以達到防水氣或防塵之功用。包覆結構的數目可依實際需求做變化。波長轉換材料係用以吸收發光單元202所發出的第一波長光以發射出與第一波長的光,第一波長不同之第二波長。波長轉換材料包含但不限於黃綠色螢光粉及紅色螢光粉。黃綠色螢光粉之成分係例如鋁氧化物(YAG或TAG)、矽酸鹽、釩酸鹽、鹼土金屬硒化物、或金屬氮化物。紅色螢光粉之成分係例如矽酸鹽、釩酸鹽、鹼土金屬硫化物、金屬氮氧化物、或鎢鉬酸鹽族混合物。擴散粉包含無機微粒(例如:二氧化矽)或有機物微粒(例如:高分子聚合物)。散熱粒子包含金屬、金屬氧化物(例如:氧化鋁)、或非金屬氧化物(例如:氧化硼或氮化硼)。在此實施例中,第一包覆結構30具有一第一厚度(t1)(可為平均厚度、或最大、最小厚度),第二包覆結構40具有一第二 厚度(t2)形成在第一包覆結構30上;其中第二厚度為一均勻厚度,且第一厚度(t1)大於第二厚度(t2)。在另一實施例中,第一厚度可小於或等於第二厚度。或者,第二厚度可為一非均勻厚度。第一包覆結構30與第二包覆結構40可利用點膠、噴塗或鑄模(例如:射出鑄模或擠壓鑄模)等方式而形成。需注意的是,當利用點膠或噴塗形成第一包覆結構30與第二包覆結構40時,其剖面可呈一橢圓或半圓形狀(例如:第3B圖所示)。當利用鑄模方式而形成第一包覆結構30與第二包覆結構40時,其剖面可呈一似長方形(第3C圖所示)。亦可設計模具形狀,使第一包覆結構30或/及第二包覆結構40具有橢圓、半圓形或其他形狀。更者,可設計模具形狀使第一包覆結構30或/及第二包覆結構40具有突出部301、401。突出部301、401的位置係對應每一發光單元202以改變發光元件20之發光光形(如第3D圖所示)。 突出部301、401具有半圓形之剖面,但亦可具有弧形、三角形、梯形、或其他多邊形之剖面。在另一實施例中,如第3E圖所示,突出部301、401的位置係未對應每一發光單元202之位置,即突出部301、401與發光單元202彼此交錯排列且實質上未互相重疊,藉此可減少光於不同材料之介面處所產生的全反射,以增加出光效率。 Referring to FIG. 3A, the first cladding structure 30 completely covers the illuminating element The member 20 covers a portion of the extension bracket 102, whereby the light-emitting element 20 is not exposed and is not in contact with the external environment (air). Further, the first cladding structure 30 is in direct contact with the growth substrate 201. Referring to FIG. 3B, the second cladding structure 40 also completely covers the first cladding structure 30 and covers a portion of the extension bracket 102 to provide further protection. The first cladding structure 30 or/and the second cladding structure 40 may comprise a wavelength converting material, a diffusion powder, heat dissipating particles, or a combination thereof. When the second cladding structure 40 contains the wavelength conversion material, a third cladding structure may be further formed to cover the second cladding structure 40 to achieve the function of waterproofing or dustproof. The number of cladding structures can be varied according to actual needs. The wavelength converting material is configured to absorb the first wavelength light emitted by the light emitting unit 202 to emit light having a second wavelength different from the first wavelength. Wavelength converting materials include, but are not limited to, yellow-green fluorescent powder and red fluorescent powder. The component of the yellow-green phosphor is, for example, aluminum oxide (YAG or TAG), citrate, vanadate, alkaline earth metal selenide, or metal nitride. The components of the red phosphor are, for example, citrate, vanadate, alkaline earth metal sulfide, metal oxynitride, or a mixture of tungsten molybdate salts. The diffusion powder contains inorganic fine particles (for example, cerium oxide) or organic fine particles (for example, high molecular polymer). The heat dissipating particles comprise a metal, a metal oxide (eg, alumina), or a non-metal oxide (eg, boron oxide or boron nitride). In this embodiment, the first cladding structure 30 has a first thickness (t1) (which may be an average thickness, or a maximum and minimum thickness), and the second cladding structure 40 has a second A thickness (t2) is formed on the first cladding structure 30; wherein the second thickness is a uniform thickness, and the first thickness (t1) is greater than the second thickness (t2). In another embodiment, the first thickness can be less than or equal to the second thickness. Alternatively, the second thickness can be a non-uniform thickness. The first cladding structure 30 and the second cladding structure 40 may be formed by dispensing, spraying, or molding (for example, injection molding or extrusion molding). It should be noted that when the first cladding structure 30 and the second cladding structure 40 are formed by dispensing or spraying, the cross section may have an elliptical or semicircular shape (for example, as shown in FIG. 3B). When the first cladding structure 30 and the second cladding structure 40 are formed by a molding method, the cross section may have a rectangular shape (shown in FIG. 3C). The shape of the mold can also be designed such that the first cladding structure 30 or/and the second cladding structure 40 have an elliptical, semi-circular or other shape. Furthermore, the shape of the mold can be designed such that the first cladding structure 30 or/and the second cladding structure 40 have protrusions 301, 401. The positions of the protrusions 301, 401 correspond to each of the light-emitting units 202 to change the light-emitting shape of the light-emitting element 20 (as shown in FIG. 3D). The projections 301, 401 have a semi-circular cross section, but may also have a curved, triangular, trapezoidal, or other polygonal cross section. In another embodiment, as shown in FIG. 3E, the positions of the protruding portions 301 and 401 are not corresponding to the positions of the respective light emitting units 202, that is, the protruding portions 301, 401 and the light emitting units 202 are staggered with each other and substantially not mutually. Overlap, thereby reducing total reflection generated by light at interfaces of different materials to increase light extraction efficiency.

第一包覆結構30包含環氧樹脂、矽膠(例如:PDMS)、 矽橡膠(silicone rubber)、矽樹脂(silicone resin)、彈性PU、多孔PU、丙烯酸橡膠(acrylic rubber)、或玻璃。第二包覆結構40包含環氧樹脂、矽膠(例如:PDMS)、矽橡膠(silicone rubber)、矽樹脂(silicone resin)、彈性PU、多孔PU、丙烯酸橡膠(acrylic rubber)、或玻璃。 第一包覆結構30與第二包覆結構40之材料可為相同或相異。需注意的是,當發光裝置具有多層包覆結構時,每一層之包覆結構之材料可相同或相異。 The first cladding structure 30 comprises an epoxy resin, a silicone resin (for example: PDMS), Silicone rubber, silicone resin, elastic PU, porous PU, acrylic rubber, or glass. The second cladding structure 40 comprises an epoxy resin, a silicone resin (for example: PDMS), a silicone rubber, a silicone resin, an elastic PU, a porous PU, an acrylic rubber, or a glass. The materials of the first cladding structure 30 and the second cladding structure 40 may be the same or different. It should be noted that when the light-emitting device has a multi-layered cladding structure, the materials of the cladding structures of each layer may be the same or different.

第4A~4C圖顯示本發明之第三實施例中一發光裝置300之製造流程圖。載具10包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。載具10更包含複數個連接 支架103。連接支架103係以一平行於支撐支架101之方向彼此排列並物理性連接延伸支架102,藉此載具10係形成一網路結構(net structure)。複數個發光元件20係分別放置於兩延伸支架102間且固定於兩延伸支架102上。發光元件20可藉由延伸支架102彼此電性連接。 在本實施例中,發光元件20未設置在連接支架103上。延伸支架102或/且連接支架103可作為一支撐體而支撐發光元件20且發光元件20彼此排列於同一直線上。參照第4B圖所示,形成一第一包覆結構30於複數個發光元件20及部分延伸支架102上以完全地覆蓋並包覆發光元件20。部分延伸支架102及連接支架103係曝露於外界環境(例如:空氣)。在此實施例中,第一包覆結構30可包含波長轉換材料、擴散粉、散熱粒子或其組合。選擇性地,第二包覆結構40(圖未示)亦可完全地包覆第一包覆結構30並覆蓋部分之延伸支架102以提供進一步保護。接著,分離每一延伸支架組之相對兩端的延伸支架102A及支撐支架101,且選擇性地分離連接支架103,藉此以形成不同形狀之發光裝置300。例如,在此實施例中,參照第4C圖,發光裝置300包含四個彼此平行排列且位於同一平面但不同直線上並電性連接之發光元件20;接著,參照第4D圖,彎折連接支架103使得延伸支架102C往延伸支架102B之方向靠近,藉此發光元件20彼此不位於同一平面且具有發光單元之一側朝向不同方向。選擇性地,可彎折延伸支架102或/及連接支架103使發光元件20彼此位於同一平面。當然,在另一實施例中,可選擇性地切割延伸支架102或/及連接支架103,且根據所需形狀而彎折未切割之延伸支架102或/及連接支架103。同樣地,被彎折之延伸支架102及連接支架103亦係未被第一包覆結構3所包覆或覆蓋而曝露於外界環境(例如:空氣)。 4A to 4C are views showing a manufacturing flow chart of a light-emitting device 300 in the third embodiment of the present invention. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. The carrier 10 further includes a plurality of connections Bracket 103. The connection brackets 103 are arranged in a direction parallel to the support brackets 101 and physically connected to the extension brackets 102, whereby the carrier 10 forms a net structure. A plurality of light-emitting elements 20 are respectively placed between the two extension brackets 102 and fixed to the two extension brackets 102. The light emitting elements 20 can be electrically connected to each other by the extension bracket 102. In the present embodiment, the light-emitting element 20 is not disposed on the connection bracket 103. The extension bracket 102 or/and the connection bracket 103 can support the light emitting element 20 as a support and the light emitting elements 20 are arranged on the same line with each other. Referring to FIG. 4B, a first cladding structure 30 is formed on the plurality of light emitting elements 20 and the partial extension brackets 102 to completely cover and cover the light emitting elements 20. The partial extension bracket 102 and the connection bracket 103 are exposed to the external environment (for example, air). In this embodiment, the first cladding structure 30 can comprise a wavelength converting material, a diffusion powder, heat dissipating particles, or a combination thereof. Optionally, the second cladding structure 40 (not shown) may also completely enclose the first cladding structure 30 and cover a portion of the extension bracket 102 to provide further protection. Next, the extension brackets 102A and the support brackets 101 at opposite ends of each of the extended bracket groups are separated, and the connection brackets 103 are selectively separated, thereby forming the light-emitting devices 300 of different shapes. For example, in this embodiment, referring to FIG. 4C, the light-emitting device 300 includes four light-emitting elements 20 arranged in parallel with each other and on the same plane but on different straight lines and electrically connected; then, referring to FIG. 4D, the connection bracket is bent. 103 causes the extension bracket 102C to approach the direction of the extension bracket 102B, whereby the light-emitting elements 20 are not in the same plane with each other and have one side of the light-emitting unit facing in different directions. Alternatively, the bendable extension bracket 102 or/and the connection bracket 103 align the light emitting elements 20 with each other. Of course, in another embodiment, the extension bracket 102 or/and the attachment bracket 103 can be selectively cut and the uncut extension bracket 102 or/and the connection bracket 103 can be bent depending on the desired shape. Similarly, the bent extension bracket 102 and the connection bracket 103 are not covered or covered by the first covering structure 3 and exposed to the external environment (for example, air).

第4E圖顯示第4D圖之發光裝置設置於一燈泡內之示意圖。燈泡包含一燈殼90、發光裝置300、導線支架91及電連接件92。導線支架91係電連接至發光裝置300使得發光元件20彼此串聯連接。此外,導線支架91亦用以支撐發光裝置300使得發光裝置300可以一預定形狀位於燈泡內之一特定位置。發光元件20係往各個方向發光以 使燈泡具有一發光角度大於270度之全週光。導線支架91包含銅、金、鉑、銀、鋼、鐵、鋁或其合金。電連接件92用以與外部電路電連接。 電連接件92可為螺旋式(例如:E12、E14、E72等)燈頭、或接頭式(例如:B22)燈頭。 Fig. 4E is a view showing the light-emitting device of Fig. 4D disposed in a bulb. The light bulb includes a lamp housing 90, a light emitting device 300, a wire holder 91, and an electrical connector 92. The wire holder 91 is electrically connected to the light emitting device 300 such that the light emitting elements 20 are connected to each other in series. In addition, the wire holder 91 is also used to support the light emitting device 300 such that the light emitting device 300 can be located at a specific position within the bulb in a predetermined shape. The light emitting element 20 emits light in various directions. The bulb is provided with a full illumination of an illumination angle greater than 270 degrees. The wire holder 91 contains copper, gold, platinum, silver, steel, iron, aluminum or an alloy thereof. The electrical connector 92 is for electrical connection with an external circuit. The electrical connector 92 can be a helical (eg, E12, E14, E72, etc.) base or a connector (eg, B22) base.

第5A圖顯示本發明之第四實施例中一發光元件20位於 載具10上之示意圖。載具10係包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。需注意的是,與支撐支架101相連之延伸支架102具有一T型形狀,而未與支撐支架101連接之延伸支架102具有十字形狀,亦即每一延伸支架102具有一第一區域1021及一第二區域1022且第二區域1022之寬度係大於第一區域1021之寬度。複數個發光元件20係分別放置於兩延伸支架102間且固定於兩延伸支架102之第一區域1021上。藉由第二區域1022寬度之設計,可增加發光裝置400之散熱面積,藉此幫助發光元件20所產生的熱傳至外界。同樣地,如同第2A圖,因每一延伸支架組之延伸支架102彼此不相連,因此載具10設置於一載板(圖未示)上,以使支撐支架101及延伸支架102可固定於載板上。接著,再固定發光元件200於延伸支架102上。或者,載板具有複數個凹槽以設置支撐支架101及延伸支架102於其內。固定發光元件200於延伸支架102上後,移除載板。之後,參照第2B~2G圖,可形成第一包覆結構30或/且第二包覆結構40;接著分離延伸支架102及支撐支架101並彎折延伸支架102以形成具有一預定結構之發光裝置。 Figure 5A shows a light-emitting element 20 in the fourth embodiment of the present invention. A schematic view of the carrier 10. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. It should be noted that the extension bracket 102 connected to the support bracket 101 has a T-shape, and the extension bracket 102 not connected to the support bracket 101 has a cross shape, that is, each extension bracket 102 has a first area 1021 and a The second region 1022 and the width of the second region 1022 are greater than the width of the first region 1021. A plurality of light-emitting elements 20 are respectively placed between the two extension brackets 102 and fixed to the first region 1021 of the two extension brackets 102. By the design of the width of the second region 1022, the heat dissipation area of the light-emitting device 400 can be increased, thereby helping the heat generated by the light-emitting element 20 to pass to the outside. Similarly, as in FIG. 2A, since the extension brackets 102 of each extension bracket group are not connected to each other, the carrier 10 is disposed on a carrier board (not shown) such that the support bracket 101 and the extension bracket 102 can be fixed to On the carrier board. Next, the light-emitting element 200 is fixed on the extension bracket 102. Alternatively, the carrier has a plurality of recesses to define the support bracket 101 and the extension bracket 102 therein. After the light-emitting element 200 is fixed on the extension bracket 102, the carrier board is removed. Thereafter, referring to FIGS. 2B-2G, the first cladding structure 30 or/and the second cladding structure 40 may be formed; then, the extension bracket 102 and the support bracket 101 are separated and the extension bracket 102 is bent to form a light having a predetermined structure. Device.

第5B圖顯示本發明之第五實施例中發光元件20位於載具10上之示意圖。載具10包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。載具10更包含複數個連接支架103。連接支架103係以一平行於支撐支架101之方向彼此排列並物理性連接延伸支架102,藉此,載具10形成一網路結構(net structure)。複數個發光元件20分別放置於兩延伸支架102間且固定於 兩延伸支架102上。發光元件20可藉由延伸支架102彼此電性連接。 在本實施例中,發光元件20未設置在連接支架103。延伸支架102或/且連接支架103可作為一支撐體以支撐發光元件20且發光元件20彼此排列於同一直線上。如同第5A圖,與支撐支架101相連之延伸支架102具有一T型形狀,而未與支撐支架101連接之延伸支架102具有十字形狀,亦即每一延伸支架102具有一第一區域1021及一第二區域1022且第二區域1022之寬度係大於第一區域1021之寬度。複數個發光元件20係分別放置於兩延伸支架102間且固定於兩延伸支架102之第一區域1021上。藉由第二區域1022寬度之設計,可增加發光裝置400之散熱面積,藉此幫助發光元件20所產生的熱傳至外界。當然,也可設計連接支架103之寬度,亦也可幫助發光元件20所產生的熱傳至外界。同樣地,參照第4B~4D圖,可形成第一包覆結構30或/且第二包覆結構40;接著,可選擇性地分離延伸支架102及連接支架103並彎折延伸支架102或/且連接支架103以形成具有一預定結構之發光裝置。 Fig. 5B is a view showing the light-emitting element 20 on the carrier 10 in the fifth embodiment of the present invention. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. The carrier 10 further includes a plurality of connection brackets 103. The connection brackets 103 are arranged in a direction parallel to the support brackets 101 and physically connected to the extension brackets 102, whereby the carrier 10 forms a net structure. A plurality of light-emitting elements 20 are respectively placed between the two extension brackets 102 and fixed to Two extension brackets 102 are provided. The light emitting elements 20 can be electrically connected to each other by the extension bracket 102. In the present embodiment, the light-emitting element 20 is not disposed on the connection bracket 103. The extension bracket 102 or/and the connection bracket 103 can serve as a support to support the light-emitting elements 20 and the light-emitting elements 20 are arranged on the same line with each other. As shown in FIG. 5A, the extension bracket 102 connected to the support bracket 101 has a T-shape, and the extension bracket 102 not connected to the support bracket 101 has a cross shape, that is, each extension bracket 102 has a first area 1021 and a The second region 1022 and the width of the second region 1022 are greater than the width of the first region 1021. A plurality of light-emitting elements 20 are respectively placed between the two extension brackets 102 and fixed to the first region 1021 of the two extension brackets 102. By the design of the width of the second region 1022, the heat dissipation area of the light-emitting device 400 can be increased, thereby helping the heat generated by the light-emitting element 20 to pass to the outside. Of course, the width of the connection bracket 103 can also be designed, and the heat generated by the light-emitting element 20 can also be transmitted to the outside. Similarly, referring to FIGS. 4B-4D, the first cladding structure 30 or/and the second cladding structure 40 may be formed; then, the extension bracket 102 and the connection bracket 103 may be selectively separated and the extension bracket 102 or bent may be bent. And the bracket 103 is connected to form a light-emitting device having a predetermined structure.

第5C圖顯示本發明之第六實施例中發光元件20位於載 具10上之示意圖。載具10係包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。發光元件20包含第一發光群組20A及第二發光群組20B。第一發光群組20A係放置且固定於每一延伸支架組之兩延伸支架102間;第二發光群組20B係與第一發光群組20A垂直地且設置於鄰近之延伸支架組之兩延伸支架102間,藉此,發光元件20形成一網路結構(net structure)且彼此可以橋式方式形成電連接。第一發光群組20A係延著第一方向(D1)排列,第二發光群組20B係延著第二方向(D2)排列,第一方向係垂直第二方向。同樣地,可形成第一包覆結構30或/且第二包覆結構40;接著選擇性地分離延伸支架102並彎折延伸支架102以形成具有一預定結構之發光裝置。參照第5D圖,發光裝置600係以橋式方式形成電連接,且具有發光單元之一側朝向相同方向。如同第5A圖,延伸支架 102之設計亦幫助散熱。 Figure 5C is a view showing the light-emitting element 20 in the sixth embodiment of the present invention. With a schematic diagram on 10. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. The light emitting element 20 includes a first light emitting group 20A and a second light emitting group 20B. The first illumination group 20A is placed and fixed between the two extension brackets 102 of each extension bracket group; the second illumination group 20B is perpendicular to the first illumination group 20A and disposed on two extensions of the adjacent extension bracket group. Between the supports 102, the light-emitting elements 20 form a net structure and can be electrically connected to each other in a bridge manner. The first lighting group 20A is arranged in a first direction (D1), and the second lighting group 20B is arranged in a second direction (D2), and the first direction is perpendicular to the second direction. Likewise, a first cladding structure 30 or/and a second cladding structure 40 can be formed; then the extension bracket 102 is selectively separated and the extension bracket 102 is bent to form a light emitting device having a predetermined structure. Referring to FIG. 5D, the light-emitting device 600 is electrically connected in a bridge manner and has one side of the light-emitting unit facing the same direction. As shown in Figure 5A, the extension bracket The design of 102 also helps with heat dissipation.

第6A圖顯示本發明第七實施例之發光元件20位於載具10上之示意圖。載具10包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。在此實施例中,以四個延伸支架組為例,且每一延伸支架組包含三個延伸支架102及兩個發光元件20設置於延伸支架102上。載具10更包含複數個連接支架103。連接支架103係以一平行於支撐支架101之方向彼此排列並物理性連接延伸支架102。需注意的是,連接支架103僅連接相鄰之兩延伸支架組。接著,分離延伸支架102及支撐支架101以形成一發光裝置700。如第6B圖所示,彎折延伸支架102或/及連接支架103使得發光裝置700成為一預定形狀。發光裝置700包含兩組延伸支架組、四個發光元件20。如第6C圖所示,發光裝置700設置於一蠟燭燈中。蠟燭燈包含一燈殼901、一導線支架902、一基座903及一電連接件904。電連接件904可為螺旋式(例如:E12、E14、E72等)燈頭、或接頭式(例如:B22)燈頭。 Fig. 6A is a view showing the light-emitting element 20 of the seventh embodiment of the present invention on the carrier 10. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. In this embodiment, four extended bracket groups are taken as an example, and each of the extended bracket groups includes three extending brackets 102 and two light emitting elements 20 are disposed on the extending bracket 102. The carrier 10 further includes a plurality of connection brackets 103. The connecting brackets 103 are arranged in a direction parallel to the supporting bracket 101 and physically connected to the extending bracket 102. It should be noted that the connection bracket 103 only connects the adjacent two extension bracket groups. Next, the extension bracket 102 and the support bracket 101 are separated to form a light-emitting device 700. As shown in FIG. 6B, the bent extension bracket 102 or/and the connection bracket 103 causes the light-emitting device 700 to have a predetermined shape. The light emitting device 700 includes two sets of extended brackets and four light emitting elements 20. As shown in FIG. 6C, the light emitting device 700 is disposed in a candle light. The candle lamp comprises a lamp housing 901, a wire holder 902, a base 903 and an electrical connector 904. The electrical connector 904 can be a helical (eg, E12, E14, E72, etc.) base, or a connector (eg, B22) base.

發光裝置700係利用延伸支架102固定於並電連接至導線支架902。導線支架902亦用以支撐發光裝置700使得發光裝置700可以一預定形狀位於蠟燭燈內之一特定位置。第6D圖顯示於第6C圖中發光裝置700之電路示意圖。發光元件20C、20D為並聯連接;發光元件20E、20F為並聯連接;之後,彼此再串聯連接。或者,發光裝置700可電連接至一交流電源且第6E圖顯示發光裝置700之另一電路示意圖,於正循環下時,發光元件20C、20F會發光;於負循環下,發光元件20D、20E會發光。 The light emitting device 700 is fixed to and electrically connected to the wire holder 902 by the extension bracket 102. The wire holder 902 is also used to support the light emitting device 700 such that the light emitting device 700 can be positioned at a specific position within the candle light in a predetermined shape. Fig. 6D is a circuit diagram showing the light-emitting device 700 in Fig. 6C. The light-emitting elements 20C, 20D are connected in parallel; the light-emitting elements 20E, 20F are connected in parallel; after that, they are connected in series to each other. Alternatively, the light-emitting device 700 can be electrically connected to an AC power source and FIG. 6E shows another circuit diagram of the light-emitting device 700. When the current cycle is under, the light-emitting elements 20C, 20F emit light; under the negative cycle, the light-emitting elements 20D, 20E Will shine.

第6F圖顯示本發明第八實施例之發光元件20位於載具10上之示意圖。載具10包含一對支撐支架101及複數個延伸支架組,每一延伸支架組係彼此平行排列且與支撐支架101彼此物理性連接。每一延伸支架組包含複數個延伸支架102。延伸支架102具有一第一區域1021及一第二區域1022且第二區域1022之寬度或面積係大於第一區域1021之寬度或面積。第二區域1022係與支撐支架101物理性連 接。同樣地,如同第2A圖,因每一延伸支架組之延伸支架102彼此不相連,因此載具10設置於一載板(圖未示)上,以使支撐支架101及延伸支架102可固定於載板上。接著,再固定發光元件20於延伸支架102上。或者,載板具有複數個凹槽以設置支撐支架101及延伸支架102於其內。固定發光元件20於延伸支架102上後,移除載板。接著,分離延伸支架102及支撐支架101以形成一發光裝置800,並彎折延伸支架102使得發光裝置800成為一預定形狀。如第6G圖所示,發光裝置800設置於一蠟燭燈中。在此實施例中,由於延伸支架之第二區域1022具有較大面積,除了可增加發光裝置800之散熱面積,亦可作為一支撐使得發光裝置800直接固定於基座903上。蠟燭燈亦包含一燈殼901及一電連接件904。 Fig. 6F is a view showing the light-emitting element 20 of the eighth embodiment of the present invention on the carrier 10. The carrier 10 includes a pair of support brackets 101 and a plurality of extension bracket sets, each of which is arranged in parallel with each other and physically connected to the support brackets 101. Each of the extended stent sets includes a plurality of extension brackets 102. The extension bracket 102 has a first area 1021 and a second area 1022 and the width or area of the second area 1022 is greater than the width or area of the first area 1021. The second area 1022 is physically connected to the support bracket 101 Pick up. Similarly, as in FIG. 2A, since the extension brackets 102 of each extension bracket group are not connected to each other, the carrier 10 is disposed on a carrier board (not shown) such that the support bracket 101 and the extension bracket 102 can be fixed to On the carrier board. Next, the light-emitting element 20 is fixed to the extension bracket 102. Alternatively, the carrier has a plurality of recesses to define the support bracket 101 and the extension bracket 102 therein. After the light-emitting element 20 is fixed on the extension bracket 102, the carrier board is removed. Next, the extension bracket 102 and the support bracket 101 are separated to form a light-emitting device 800, and the extension bracket 102 is bent so that the light-emitting device 800 becomes a predetermined shape. As shown in Fig. 6G, the light emitting device 800 is disposed in a candle light. In this embodiment, since the second region 1022 of the extension bracket has a large area, in addition to increasing the heat dissipation area of the light-emitting device 800, the light-emitting device 800 can be directly fixed to the base 903 as a support. The candle light also includes a lamp housing 901 and an electrical connector 904.

第7A~7B圖顯示本發明之第九實施例之一發光裝置900 之製造流程示意圖。第7A圖類似第1C圖,不同的是,延伸支架102與支撐支架101之接觸部分1025具有錐形(tapered)的結構,藉此,延伸支架102與支撐支架101的連接強度較第1C圖小。因此,如第7B圖所示,當施加一力於接觸部分1025時,延伸支架102與支撐支架101可輕易地分離。藉由接觸部分1025的設置,可簡化製程流程。再者,延伸支架102更包含一孔洞1023。一連接導線(圖未示)可穿過孔洞1023並使發光裝置900固定於一燈泡內。或者,當複數個發光裝置900設置於一燈泡內時,連接導線可穿過每一發光裝置900之孔洞,藉此固定並支撐每一發光裝置成一預定形狀。連接導線包含金屬,可並聯、串聯、或串並聯接複數個發光裝置。 7A to 7B are views showing a light-emitting device 900 according to a ninth embodiment of the present invention. Schematic diagram of the manufacturing process. 7A is similar to FIG. 1C except that the contact portion 1025 of the extension bracket 102 and the support bracket 101 has a tapered structure, whereby the connection strength between the extension bracket 102 and the support bracket 101 is smaller than that of the first embodiment. . Therefore, as shown in Fig. 7B, when a force is applied to the contact portion 1025, the extension bracket 102 and the support bracket 101 can be easily separated. The process flow can be simplified by the arrangement of the contact portion 1025. Furthermore, the extension bracket 102 further includes a hole 1023. A connecting wire (not shown) can pass through the hole 1023 and secure the light emitting device 900 within a light bulb. Alternatively, when a plurality of light-emitting devices 900 are disposed in a light bulb, the connecting wires may pass through the holes of each of the light-emitting devices 900, thereby fixing and supporting each of the light-emitting devices in a predetermined shape. The connecting wires comprise metal, and the plurality of light emitting devices can be connected in parallel, in series, or in series.

第8A圖顯示本發明之第十實施例中發光元件20位於載 具10上之示意圖。複數個發光元件20係分別放置於兩延伸支架102間且固定於兩延伸支架102上。發光元件20藉由延伸支架102彼此串聯電性連接。延伸支架102係作為一支撐體以支撐發光元件20且發光元件20彼此排列於同一直線上。更者,第一包覆結構30(圖未示)可形成於複數個發光元件20及部分延伸支架102上以完全地覆蓋並包覆發光元件20。部分延伸支架102係未被第一包覆結構30所包覆或覆蓋 而曝露於外界環境(例如:空氣)。第二包覆結構40(圖未示)可完全地覆蓋並包覆第一包覆結構30以提供進一步保護。在本實施例中,載具10更包含一連接支架103,係以一平行於支撐支架101之方向彼此排列;及一中間支架104用以物理性連接延伸支架102、102D及連接支架103,藉此載具10係形成一網路結構(net structure)。此外,部分延伸支架102D僅用以提供支撐,並未設置發光元件20於其上。 連接支架103與延伸支架102、102D之接觸部分具有具有錐形(tapered)的結構,以及中間支架104與延伸支架102、102D及連接支架103之接觸部分亦具有錐形(tapered)的結構,因此,當施加一力於接觸部分時,可輕易地分離連接支架103與延伸支架102、102D,藉此形成發光裝置。中間支架104的設置亦可簡化製程流程。 Figure 8A shows a light-emitting element 20 in the tenth embodiment of the present invention. With a schematic diagram on 10. A plurality of light-emitting elements 20 are respectively placed between the two extension brackets 102 and fixed to the two extension brackets 102. The light emitting elements 20 are electrically connected to each other in series by the extension brackets 102. The extension bracket 102 serves as a support to support the light-emitting elements 20 and the light-emitting elements 20 are arranged on the same line with each other. Furthermore, a first covering structure 30 (not shown) may be formed on the plurality of light emitting elements 20 and the partial extension brackets 102 to completely cover and cover the light emitting elements 20. The partially extended bracket 102 is not covered or covered by the first covering structure 30 It is exposed to the outside environment (for example: air). A second cladding structure 40 (not shown) may completely cover and enclose the first cladding structure 30 to provide further protection. In this embodiment, the carrier 10 further includes a connecting bracket 103 arranged in a direction parallel to the supporting bracket 101; and an intermediate bracket 104 for physically connecting the extending brackets 102, 102D and the connecting bracket 103, This carrier 10 forms a net structure. In addition, the partial extension bracket 102D is only used to provide support, and the light-emitting element 20 is not disposed thereon. The contact portion of the connection bracket 103 and the extension brackets 102, 102D has a tapered structure, and the contact portion of the intermediate bracket 104 and the extension brackets 102, 102D and the connection bracket 103 also has a tapered structure. When a force is applied to the contact portion, the connection bracket 103 and the extension brackets 102, 102D can be easily separated, thereby forming a light-emitting device. The arrangement of the intermediate bracket 104 also simplifies the process flow.

第9A~9F圖顯示本發明之第十一實施例之一發光裝置 1000之製造流程剖面圖。參照第9A圖,可利用微影蝕刻製程以形成一圖案化晶種結構221於一載具21上。圖案化晶種結構221包含一第一區域2211、一第二區域2212及一第三區域2213。第一區域2211及第三區域2213包含複數個彼此物理性分離之晶種層。第二區域2212設置在第一區域2211及第三區域2213之間並電性連接第一區域2211及第三區域2213(參照第10A圖)。參照第9B圖,同樣地,亦可利用微影蝕刻製程以形成一圖案化金屬層222於相對應之圖案化晶種結構221上,金屬層222之面積及形狀晶種結構221之面積及形狀實質上相等。金屬層222亦包含一第一區域2221,對應於晶種結構221之第一區域2211;一第二區域2222,對應於晶種結構221之第二區域2212;及一第三區域2223,對應於晶種結構221之第三區域2213。參照第9C圖,一第一發光群組11包含複數個發光單元111分別設置在金屬層222之第一區域2221;及一第二發光群組12包含複數個發光單元121分別設置在金屬層222之第三區域2223;金屬層222之第二區域2222上無設置發光單元111、121。藉由設計金屬層的相對位置,可使設置其上之發光單元111,112以串聯、並聯、串並連接、橋式連接、或反向並聯等方式彼此連接。參照第9D圖,進行一蝕刻步驟以移除晶 種結構221。在本實施例中,因晶種結構221第二區域2212之晶種層線寬(或面積)比第一區域2211晶種層線寬(或面積)較小(參照第10A圖),當第二區域2212完全被蝕刻或移除時,第一區域2211僅一部分被蝕刻且仍有一部分形成於載具21上,藉此發光單元111、121仍固定於載具21上。再者,因晶種結構221之第二區域2212完全被蝕刻或移除,金屬層222之第二區域2222呈現一懸空狀態,亦即金屬層222之第二區域2222未與載具21直接接觸,但仍與金屬層222之第一區域2221及第三區域2223電性連接。相對地,晶種結構221之第一區域2211未被完全蝕刻或移除,因此金屬層222之第一區域2221仍連接在載具21上而未呈現懸空狀態。需注意的是,於移除晶種結構221步驟之後,晶種結構221之第一區域2211(第三區域2213)之線寬(面積)小於形成於其上之金屬層222之第一區域2221(第三區域2223)之線寬(面積)。金屬層222與相對應晶種結構221共同形成一T形剖面。參照第9E及第10B圖,相對於懸空之金屬層222第二區域2222的位置,切割載具21以形成一第一載具部211及一第二載具部212。 第一載具部211具有一第一表面2111及一第二表面2112,第二載具部212具有一第三表面2121及一第四表面2122。第一發光群組11位於第二表面上2112及第二發光群組12位於第四表面2122上。參照第9F圖,改變第一發光群組11及第二發光群組12之相對位置,使第一發光群組11及第二發光群組12實質上不位於同一直線上。此外,因金屬層222之第二區域2222懸空並具有可延展性,當改變第一發光群組11及第二發光群組12之相對位置時,金屬層222之第二區域2222係被拉伸且彎折並造成形狀的改變(參照第10C圖)。需注意的是,金屬層222之第二區域2222於拉伸步驟後仍與金屬層222之第一區域2221及第三區域2223彼此電連接。在本實施例中,第一發光群組11及第二發光群組12面向不同方向且彼此串聯電性連接。第一表面2111及第三表面2121互相平行且相面對。需注意的是,於改變相對位置步驟前,第一表面2111(第二表面2212)與第三表面2121(第四表面2122)實質上位於同一直線,然而於改變相對位置步驟後,第一表面2111(第 二表面2212)與第三表面2121(第四表面2122)不位於同一直線上。更者,於改變相對位置步驟前,位於第一載具部211之金屬層222A及位於第二載具部之金屬層222B係面向同一方向且位於載具21之同一側,然而於改變相對位置步驟後,金屬層222A與金屬層222B係面對不同方向。由於金屬層222A、222B面對不同方向,發光裝置1000可視為以載具之同一側之不同兩面與外部電路(例如:電源供應器、電路板、或電子元件)電連接。舉例來說,如第9G圖所示,一基座80,其具有一對凹槽81。發光裝置700係以金屬層222A、222B接合於對應之凹槽81中以形成電連接。在一實施例中,基座80可為燈泡中之電路板,且發光裝置1000可為燈泡中之發光燈條。 9A to 9F are diagrams showing a light-emitting device of an eleventh embodiment of the present invention A cross-section of the manufacturing process for 1000. Referring to FIG. 9A, a lithography process can be utilized to form a patterned seed structure 221 on a carrier 21. The patterned seed structure 221 includes a first region 2211, a second region 2212, and a third region 2213. The first region 2211 and the third region 2213 comprise a plurality of seed layers physically separated from each other. The second region 2212 is disposed between the first region 2211 and the third region 2213 and electrically connects the first region 2211 and the third region 2213 (refer to FIG. 10A). Referring to FIG. 9B, similarly, a lithography process can be used to form a patterned metal layer 222 on the corresponding patterned seed structure 221, the area of the metal layer 222 and the shape and shape of the seed crystal structure 221 Essentially equal. The metal layer 222 also includes a first region 2221 corresponding to the first region 2211 of the seed structure 221; a second region 2222 corresponding to the second region 2212 of the seed structure 221; and a third region 2223 corresponding to A third region 2213 of the seed structure 221 . Referring to FIG. 9C, a first light-emitting group 11 includes a plurality of light-emitting units 111 respectively disposed in a first region 2221 of the metal layer 222; and a second light-emitting group 12 includes a plurality of light-emitting units 121 respectively disposed on the metal layer 222. The third region 2223; the second region 2222 of the metal layer 222 is not provided with the light emitting units 111, 121. By designing the relative positions of the metal layers, the light-emitting units 111, 112 disposed thereon can be connected to each other in series, parallel, serial-to-serial connection, bridge connection, or reverse parallel connection. Referring to FIG. 9D, an etching step is performed to remove the crystal Structure 221 . In this embodiment, the seed layer width (or area) of the second region 2212 of the seed crystal structure 221 is smaller than the line width (or area) of the seed layer of the first region 2211 (refer to FIG. 10A), when When the two regions 2212 are completely etched or removed, only a portion of the first region 2211 is etched and a portion is still formed on the carrier 21, whereby the light emitting units 111, 121 are still fixed to the carrier 21. Moreover, because the second region 2212 of the seed crystal structure 221 is completely etched or removed, the second region 2222 of the metal layer 222 assumes a floating state, that is, the second region 2222 of the metal layer 222 is not in direct contact with the carrier 21. However, it is still electrically connected to the first region 2221 and the third region 2223 of the metal layer 222. In contrast, the first region 2211 of the seed structure 221 is not completely etched or removed, so the first region 2221 of the metal layer 222 is still attached to the carrier 21 without exhibiting a floating state. It should be noted that after the step of removing the seed crystal structure 221, the line width (area) of the first region 2211 (the third region 2213) of the seed crystal structure 221 is smaller than the first region 2221 of the metal layer 222 formed thereon. Line width (area) of (third region 2223). The metal layer 222 and the corresponding seed crystal structure 221 together form a T-shaped cross section. Referring to FIGS. 9E and 10B, the carrier 21 is cut to form a first carrier portion 211 and a second carrier portion 212 with respect to the position of the second region 2222 of the suspended metal layer 222. The first carrier portion 211 has a first surface 2111 and a second surface 2112. The second carrier portion 212 has a third surface 2121 and a fourth surface 2122. The first lighting group 11 is located on the second surface 2112 and the second lighting group 12 is located on the fourth surface 2122. Referring to FIG. 9F, the relative positions of the first lighting group 11 and the second lighting group 12 are changed such that the first lighting group 11 and the second lighting group 12 are not substantially in the same line. In addition, since the second region 2222 of the metal layer 222 is suspended and malleable, when the relative positions of the first light-emitting group 11 and the second light-emitting group 12 are changed, the second region 2222 of the metal layer 222 is stretched. And bending and causing a change in shape (refer to Fig. 10C). It should be noted that the second region 2222 of the metal layer 222 is electrically connected to the first region 2221 and the third region 2223 of the metal layer 222 after the stretching step. In this embodiment, the first lighting group 11 and the second lighting group 12 face different directions and are electrically connected to each other in series. The first surface 2111 and the third surface 2121 are parallel to each other and face each other. It should be noted that the first surface 2111 (the second surface 2212) and the third surface 2121 (the fourth surface 2122) are substantially in the same line before the step of changing the relative position, but after the step of changing the relative position, the first surface 2111 (No. The two surfaces 2212) are not in the same line as the third surface 2121 (fourth surface 2122). Moreover, before the step of changing the relative position, the metal layer 222A located in the first carrier portion 211 and the metal layer 222B located in the second carrier portion face in the same direction and are located on the same side of the carrier 21, but change the relative position. After the step, the metal layer 222A and the metal layer 222B face different directions. Since the metal layers 222A, 222B face different directions, the light emitting device 1000 can be considered to be electrically connected to external circuits (eg, a power supply, a circuit board, or an electronic component) on different sides of the same side of the carrier. For example, as shown in FIG. 9G, a pedestal 80 has a pair of grooves 81. The light emitting device 700 is bonded to the corresponding recess 81 with metal layers 222A, 222B to form an electrical connection. In an embodiment, the base 80 can be a circuit board in the light bulb, and the light emitting device 1000 can be a light strip in the light bulb.

第10A圖顯示於改變第一發光群組11及第二發光群組12之相對位置步驟之前,金屬層222之上視圖(相對應於第9D圖,但為了使圖式清楚,僅繪製金屬層222)。金屬層222之第二區域2222具有複數個曲折部。第10B圖顯示切割載具21後之上視圖。參照第10C圖,第一載具部211及第二載具部211係朝相對方向移動,藉此金屬層222之第二區域2222被拉長且相較於第10A圖,第二區域2222之曲折部具有一較大之曲率半徑,亦即曲折部較為平緩。再者,第10C圖中第一載具部211及第二載具部211之間的距離大於第10B圖中第一載具部211及第二載具部211之間的距離。在第10C圖中,僅顯示拉伸但未彎折金屬層222之第二區域2222,而後可彎折金屬層222之第二區域2222以形成第9F圖中之發光裝置1000。在另一實施例中,可直接彎折金屬層222之第二區域2222以形成第9F圖中之發光裝置1000。在另一實施例中,未拉伸前之金屬層222之第二區域2222的圖案可為螺旋狀、鋸齒狀、或半圓狀。 FIG. 10A shows a top view of the metal layer 222 before the step of changing the relative positions of the first light-emitting group 11 and the second light-emitting group 12 (corresponding to the 9D picture, but in order to make the figure clear, only the metal layer is drawn 222). The second region 2222 of the metal layer 222 has a plurality of meanders. Figure 10B shows a top view after cutting the carrier 21. Referring to FIG. 10C, the first carrier portion 211 and the second carrier portion 211 are moved in opposite directions, whereby the second region 2222 of the metal layer 222 is elongated and compared to the 10A map, the second region 2222 The meandering portion has a large radius of curvature, that is, the meandering portion is relatively flat. Further, in FIG. 10C, the distance between the first carrier portion 211 and the second carrier portion 211 is larger than the distance between the first carrier portion 211 and the second carrier portion 211 in FIG. 10B. In Fig. 10C, only the second region 2222 of the stretched but unbent metal layer 222 is shown, and then the second region 2222 of the metal layer 222 can be bent to form the light emitting device 1000 in Fig. 9F. In another embodiment, the second region 2222 of the metal layer 222 can be directly bent to form the light emitting device 1000 of the 9F. In another embodiment, the pattern of the second region 2222 of the unstretched metal layer 222 may be helical, serrated, or semi-circular.

第11A~11D圖顯示第十二實施例發光裝置1100之一製造流程剖面圖。參照第11A圖,發光裝置1100包含一載具21;一圖案化金屬層222形成在載具21上,第一發光群組11及第二發光群組12係位於圖案化金屬層222上。每一發光群組包含複數個彼此電連接之發光單元111、121。第一發光群組11中,最靠近第二發光群組12之 發光單元111A與第二發光群組12中,最靠近第一發光群組11之發光單元121A,兩發光單元111A、121A之間的間距(D1)大於第一發光群組11或第二發光群組12中,鄰近發光單元111、121間的間距(D2)。 參照第11B圖,一可延伸且可撓之導電件23設置在發光單元111A、121A之間且電性連接發光單元111A、121A。參照第11C圖,相對於導電件23的位置,切割載具21以形成一第一載具部211及一第二載具部212。第一載具部211與第二載具部212彼此不相連且分隔一段距離。再者,導電件23之一部分未與載具21連接且呈現懸空狀態。第一載具部211具有一第一表面2111及一第二表面2112,第二載具部212具有一第三表面2121及一第四表面2122。第一發光群組11位於第二表面2112上及第二發光群組12位於第四表面2122上。參照第11D圖,改變第一發光群組11及第二發光群組12之相對位置,使第一發光群組11及第二發光群組12實質上不位於同一直線上。此外,因導電件23懸空並具有可延展性,當改變第一發光群組11及第二發光群組12之相對位置時,導電件23係被拉伸且彎折造成形狀的改變。需注意的是,導電件23於拉伸步驟後仍與第一發光群組11及及第二發光群組12彼此電連接。在本實施例中,第一發光群組11及第二發光群組12面向不同方向且彼此串聯電性連接。第一表面2111及第三表面2121互相平行且相面對。需注意的是,於改變相對位置步驟前,第一表面2111(第二表面2212)與第三表面2121(第四表面2122)實質上位於同一直線,然而於改變相對位置步驟後,第一表面2111(第二表面2212)與第三表面2121(第四表面2122)不位於同一直線上。更者,於改變相對位置步驟前,位於第一載具部211之金屬層222A及位於第二載具部之金屬層222B係面向同一方向且位於載具21之同一側,然而於改變相對位置步驟後,金屬層222A與金屬層222B係面對不同方向。由於金屬層222A、222B面對不同方向,發光裝置1000可視為以載具21同一側之不同兩面與外部電路(例如:電源供應器、電路板、或電子元件)電連接。同樣地,如第9G圖所示,發光裝置1100亦連接至基板80之凹槽且設置於燈泡中。導電件23可藉由打線、表面黏著技術 (SMT)之方式固定在載具21上。未拉伸前之導電件23的上視圖圖案可為蜿蜒狀、螺旋狀、鋸齒狀、或半圓狀。 11A to 11D are cross-sectional views showing a manufacturing process of a light-emitting device 1100 of the twelfth embodiment. Referring to FIG. 11A, the light-emitting device 1100 includes a carrier 21; a patterned metal layer 222 is formed on the carrier 21, and the first light-emitting group 11 and the second light-emitting group 12 are disposed on the patterned metal layer 222. Each of the light-emitting groups includes a plurality of light-emitting units 111, 121 electrically connected to each other. Among the first lighting group 11, the lighting unit 111A closest to the second lighting group 12 and the second lighting group 12, the lighting unit 121A closest to the first lighting group 11, between the two lighting units 111A, 121A The spacing (D 1 ) is greater than the spacing (D 2 ) between the first lighting group 11 or the second lighting group 12 adjacent to the lighting units 111, 121. Referring to FIG. 11B, an extendable and flexible conductive member 23 is disposed between the light emitting units 111A, 121A and electrically connected to the light emitting units 111A, 121A. Referring to FIG. 11C, the carrier 21 is cut relative to the position of the conductive member 23 to form a first carrier portion 211 and a second carrier portion 212. The first carrier portion 211 and the second carrier portion 212 are not connected to each other and separated by a distance. Further, a portion of the conductive member 23 is not connected to the carrier 21 and assumes a floating state. The first carrier portion 211 has a first surface 2111 and a second surface 2112. The second carrier portion 212 has a third surface 2121 and a fourth surface 2122. The first lighting group 11 is located on the second surface 2112 and the second lighting group 12 is located on the fourth surface 2122. Referring to FIG. 11D, the relative positions of the first lighting group 11 and the second lighting group 12 are changed such that the first lighting group 11 and the second lighting group 12 are not substantially in the same line. Further, since the conductive member 23 is suspended and malleable, when the relative positions of the first light-emitting group 11 and the second light-emitting group 12 are changed, the conductive member 23 is stretched and bent to cause a shape change. It should be noted that the conductive member 23 is electrically connected to the first light-emitting group 11 and the second light-emitting group 12 after the stretching step. In this embodiment, the first lighting group 11 and the second lighting group 12 face different directions and are electrically connected to each other in series. The first surface 2111 and the third surface 2121 are parallel to each other and face each other. It should be noted that the first surface 2111 (the second surface 2212) and the third surface 2121 (the fourth surface 2122) are substantially in the same line before the step of changing the relative position, but after the step of changing the relative position, the first surface 2111 (second surface 2212) and third surface 2121 (fourth surface 2122) are not in the same line. Moreover, before the step of changing the relative position, the metal layer 222A located in the first carrier portion 211 and the metal layer 222B located in the second carrier portion face in the same direction and are located on the same side of the carrier 21, but change the relative position. After the step, the metal layer 222A and the metal layer 222B face different directions. Since the metal layers 222A, 222B face different directions, the light emitting device 1000 can be considered to be electrically connected to external circuits (eg, a power supply, a circuit board, or an electronic component) on different sides of the same side of the carrier 21. Similarly, as shown in Fig. 9G, the light-emitting device 1100 is also connected to the recess of the substrate 80 and disposed in the bulb. The conductive member 23 can be fixed to the carrier 21 by wire bonding or surface bonding technology (SMT). The upper view pattern of the conductive member 23 before unstretching may be braided, spiral, serrated, or semicircular.

載具10、21包含有機材料、無機材料、或及其組合。有機材料,例如環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)。無機材料,例如藍寶石、氧化鋅、鑽石、玻璃、石英或氮化鋁。載具10、21可為透明或不透明。金屬層包含銅、金、鉑、銀、鋁或其合金。晶種層包含鈦、銅或其合金。導電件包含銅、金、鉑、銀、鋁或其合金。 The carriers 10, 21 comprise an organic material, an inorganic material, or a combination thereof. Organic materials such as epoxy resin (Epoxy), polyammonium (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Su8, acrylic resin (Acrylic Resin), polymethacrylic acid Methyl ester (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, Fluorocarbon Polymer. Inorganic materials such as sapphire, zinc oxide, diamond, glass, quartz or aluminum nitride. The carriers 10, 21 can be transparent or opaque. The metal layer comprises copper, gold, platinum, silver, aluminum or alloys thereof. The seed layer comprises titanium, copper or an alloy thereof. The conductive member comprises copper, gold, platinum, silver, aluminum or an alloy thereof.

發光單元111、121之細部結構除了可具有如第3A圖所示之結構外,亦可具有如第12A~12C圖所示之結構。發光單元111、112包含一基板7000、一第一型半導體層7001、一活性層7002、及一第二型半導體層7003,第一型半導體層7001及第二型半導體層7003例如為包覆層(cladding layer)或限制層(confinement layer),可分別提供電子、電洞,使電子、電洞於活性層7002中結合以發光。一第一導電部7004及一第二導電部7005分別形成在第二型半導體層7003及第一型半導體層上7001。發光二極體單元2000係為一覆晶式發光二極體。第一導電部7004與第二導電部7005之間有一孔隙7008,且第一導電部7004具有一電極接觸面70041且第二導電部7005具有一電極接觸面70051;電極接觸面70041與電極接觸面70051實質上位於相同的水平面。一透明膠體覆蓋基板7000、第一型半導體層7001、活性層7002、及第二型半導體層7003且填入孔隙7008內以形成第一透明結構7026。於另一實施例中,透明膠體未完全填滿孔隙7008,因此會有空氣形成在第一導電部7004與第二導電部7005之間。第一透明結構7026具有一表面70261,實質上與電極接觸面70041、70051齊平。接著,保護層7006形成在第一透明結構7026之表面且暴露出第一導電部7004與第二導電部7005。第一擴大電極部7024及第二擴大電極部7025分別形成在第一導電部7004與第二導電部7005,亦形成在保護層7006上。發光單元111、121係利用第一擴大電極部7024及第二擴大電極部7025與金屬層222 直接接觸並形成電連接。在此實施例中,第一擴大電極部7024之一側邊70241未與保護層7006之一側邊70061齊平;第二擴大電極部7025之另一側邊70251未與保護層7006之另一側邊70062齊平。於另一實施例中,第一擴大電極部7024之一側邊70241可與保護層7006之一側邊70061齊平;第二擴大電極部7025之一側邊70251可與保護層7006之另一側邊70062齊平。發光單元更包含一第二透明結構7027形成在第一透明結構7026上。在另一實施例中,發光單元可不具有第二透明結構7027。第一透明結構7026或第二透明結構7027包含環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、SU8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、氧化鋁(Al2O3)、SINR、旋塗玻璃(SOG)。第二透明結構7027包含藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、環氧樹脂(Epoxy)、石英(quartz)、丙烯酸樹脂(Acrylic Resin)、氧化矽(SiOx)、氧化鋁(Al2O3)、氧化鋅(ZnO)、或矽膠(Silicone)。保護層7006透明不導電但具有高導熱係數之物質(例如:類碳鑽),或亦可包含高反射率之物質(例如:二氧化鈦、二氧化矽或氧化鋁)。第一透明結構7026或/且第二透明結構7027可包含波長轉換材料、擴散粉、散熱粒子或其組合。 The detailed structure of the light-emitting units 111 and 121 may have a structure as shown in Figs. 12A to 12C in addition to the structure as shown in Fig. 3A. The light emitting units 111 and 112 include a substrate 7000, a first type semiconductor layer 7001, an active layer 7002, and a second type semiconductor layer 7003. The first type semiconductor layer 7001 and the second type semiconductor layer 7003 are, for example, cladding layers. A cladding layer or a confinement layer may respectively provide electrons and holes to combine electrons and holes in the active layer 7002 to emit light. A first conductive portion 7004 and a second conductive portion 7005 are formed on the second type semiconductor layer 7003 and the first type semiconductor layer 7001, respectively. The light emitting diode unit 2000 is a flip chip type light emitting diode. There is an aperture 7008 between the first conductive portion 7004 and the second conductive portion 7005, and the first conductive portion 7004 has an electrode contact surface 70041 and the second conductive portion 7005 has an electrode contact surface 70051; the electrode contact surface 70041 and the electrode contact surface The 70051 is located substantially at the same level. A transparent colloid covers the substrate 7000, the first type semiconductor layer 7001, the active layer 7002, and the second type semiconductor layer 7003 and is filled into the holes 7008 to form a first transparent structure 7026. In another embodiment, the transparent colloid does not completely fill the voids 7008, so air is formed between the first conductive portion 7004 and the second conductive portion 7005. The first transparent structure 7026 has a surface 70261 that is substantially flush with the electrode contact faces 70041, 70051. Next, a protective layer 7006 is formed on the surface of the first transparent structure 7026 and exposes the first conductive portion 7004 and the second conductive portion 7005. The first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 are formed on the first conductive portion 7004 and the second conductive portion 7005, respectively, and are also formed on the protective layer 7006. The light-emitting units 111 and 121 are in direct contact with the metal layer 222 by the first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 to form an electrical connection. In this embodiment, one side edge 70241 of the first enlarged electrode portion 7024 is not flush with one side 70061 of the protective layer 7006; the other side edge 70251 of the second enlarged electrode portion 7025 is not associated with the other of the protective layer 7006. The side 70062 is flush. In another embodiment, one side edge 70041 of the first enlarged electrode portion 7024 can be flush with one side 70061 of the protective layer 7006; one side edge 70251 of the second enlarged electrode portion 7025 can be combined with the other side of the protective layer 7006. The side 70062 is flush. The light emitting unit further includes a second transparent structure 7027 formed on the first transparent structure 7026. In another embodiment, the light emitting unit may not have the second transparent structure 7027. The first transparent structure 7026 or the second transparent structure 7027 comprises epoxy resin (Epoxy), polyammonium (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), SU8, acrylic resin ( Acrylic Resin), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer , alumina (Al 2 O 3 ), SINR, spin-on glass (SOG). The second transparent structure 7027 comprises Sapphire, Diamond, Glass, Epoxy, quartz, Acrylic Resin, SiO x , Alumina ( Al 2 O 3 ), zinc oxide (ZnO), or silicone (Silicone). The protective layer 7006 is transparent and non-conductive but has a high thermal conductivity (for example, a carbon-like drill), or may also contain a high reflectance substance (for example, titanium dioxide, ceria or alumina). The first transparent structure 7026 or/and the second transparent structure 7027 can comprise a wavelength converting material, a diffusion powder, heat dissipating particles, or a combination thereof.

第12B圖之發光單元具有與第12A圖之發光結構具有類似 的結構。第12A圖之發光單元僅包含一發光二極體,然而,第12B圖之發光單元包含複數個發光二極體。在本實施例中,每一發光二極體具有各自之基板7000。於其他實施例中,可如第3A圖所示,複數個發光二極體共同磊晶形成於一基板上。發光二極體彼此之間係利用一電連接結構204而形成電連接(串聯、並聯或串並聯)。在本實施例中,發光二極體之第二導電部7005及相鄰之發光二極體之第一導電部7004利用一導線結構7015直接接觸並形成串聯連接。第一透明結構7026覆蓋複數個發光二極體。需注意的是,僅藉由第一擴大電極部7024、第二擴大電極部7025與金屬層222電連接,即可使複數個發光二極體發光。 The light emitting unit of Fig. 12B has a similar structure to the light emitting structure of Fig. 12A Structure. The light-emitting unit of Fig. 12A includes only one light-emitting diode, however, the light-emitting unit of Fig. 12B includes a plurality of light-emitting diodes. In this embodiment, each of the light emitting diodes has a respective substrate 7000. In other embodiments, as shown in FIG. 3A, a plurality of light emitting diodes are collectively epitaxially formed on a substrate. The light-emitting diodes are electrically connected to each other by an electrical connection structure 204 (series, parallel or series-parallel). In this embodiment, the second conductive portion 7005 of the light emitting diode and the first conductive portion 7004 of the adjacent light emitting diode are directly contacted by a wire structure 7015 and formed in series connection. The first transparent structure 7026 covers a plurality of light emitting diodes. It should be noted that only the first enlarged electrode portion 7024 and the second enlarged electrode portion 7025 are electrically connected to the metal layer 222, so that a plurality of light emitting diodes can be made to emit light.

第12C圖之發光單元具有與第12B圖之發光結構具有類似 的結構,不同的是,第12B圖之發光單元中,每一發光二極體具有各自的第一擴大電極部7024及第二擴大電極部7025,且彼此不形成電連接。藉由金屬層222的設計,使得發光單元中的複數個發光二極體在載具上彼此電連接,且可以串聯、並聯、反向並聯、或以橋式結構而形成電連接。 The light emitting unit of Fig. 12C has a similar structure to the light emitting structure of Fig. 12B The structure is different. In the light-emitting unit of FIG. 12B, each of the light-emitting diodes has a respective first enlarged electrode portion 7024 and a second enlarged electrode portion 7025, and is not electrically connected to each other. By designing the metal layer 222, a plurality of light emitting diodes in the light emitting unit are electrically connected to each other on the carrier, and electrical connections can be made in series, in parallel, in parallel, or in a bridge structure.

需注意的是,上述所描述之發光裝置可視為一小型發光 燈條,當設置於照明裝置(例如:A型球泡燈、B型球泡燈、探照燈、豆燈、燈管或燈具)時,延伸支架102或金屬層可與燈泡之電路結構形成電連接。依據不同需要,可藉由延伸支架102或/及連接支架103使發光裝置具有不同之結構以使照明裝置達到全週光之效果。 It should be noted that the above described illuminating device can be regarded as a small illuminating Light bar, when disposed in a lighting device (for example: A-type bulb, B-type bulb, searchlight, bean lamp, tube or lamp), the extension bracket 102 or metal layer can be electrically connected with the circuit structure of the bulb . According to different needs, the illuminating device can have different structures by extending the bracket 102 or/and the connecting bracket 103 to achieve the effect of the full illumination of the illuminating device.

需了解的是,本發明中上述之實施例在適當的情況下, 是可互相組合或替換,而非僅限於所描述之特定實施例。本發明所列舉之各實施例僅用以說明本發明,並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易見之修飾或變更接不脫離本發明之精神與範圍。 It should be understood that the above embodiments of the present invention, where appropriate, They may be combined or replaced with each other, and are not limited to the specific embodiments described. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any obvious modifications or variations of the present invention are possible without departing from the spirit and scope of the invention.

102A、102B‧‧‧延伸支架 102A, 102B‧‧‧ Extended bracket

20‧‧‧發光元件 20‧‧‧Lighting elements

200‧‧‧發光裝置 200‧‧‧Lighting device

Claims (10)

一種製造發光裝置之方法,包含:提供複數個物理性相分離之支撐體;提供一第一發光元件及一第二發光元件,係分別固定於該等支撐體上;以及改變該第一發光元件與該第二發光元件之相對位置使該第一發光元件與該第二發光元件實質上不位於同一直線上。 A method of manufacturing a light-emitting device, comprising: providing a plurality of physically separated support bodies; providing a first light-emitting element and a second light-emitting element, respectively, being fixed to the support bodies; and changing the first light-emitting elements The position relative to the second illuminating element is such that the first illuminating element and the second illuminating element are not substantially in line. 如申請專利範圍第1項所述之方法,其中,該改變步驟包含彎折該等支撐體中之至少其一。 The method of claim 1, wherein the changing step comprises bending at least one of the supports. 如申請專利範圍第1項所述之製造方法,其中,該第一發光元件及該第二發光元件係藉由該等支撐體彼此電性連接。 The manufacturing method according to claim 1, wherein the first light-emitting element and the second light-emitting element are electrically connected to each other by the support. 如申請專利範圍第1項所述之製造方法,其中,該複數個支撐體其中之一具有一錐形的結構。 The manufacturing method of claim 1, wherein one of the plurality of supports has a tapered structure. 如申請專利範圍第1項所述之製造方法,其中,該等支撐體包含金屬。 The manufacturing method of claim 1, wherein the support comprises a metal. 如申請專利範圍第1項所述之製造方法,其中,該等支撐體具有一面心立方晶格。 The manufacturing method of claim 1, wherein the support has a one-sided cubic lattice. 如申請專利範圍第1項所述之製造方法,其中,於該改變步驟之前,形成一包覆材料包覆該第一發光元件及該第二發光元件。 The manufacturing method according to claim 1, wherein before the changing step, a covering material is formed to coat the first light emitting element and the second light emitting element. 如申請專利範圍第7項所述之製造方法,其中,該第一發光元件包含一基板,及複數個發光疊層共同磊晶形成在該基板上。 The manufacturing method of claim 7, wherein the first light-emitting element comprises a substrate, and a plurality of light-emitting layers are collectively epitaxially formed on the substrate. 如申請專利範圍第8項所述之製造方法,其中,該包覆材料係直接接觸該基板。 The manufacturing method of claim 8, wherein the covering material is in direct contact with the substrate. 如申請專利範圍第7項所述之製造方法,其中,該支撐體具有一部分未被該包覆材料所包覆。 The manufacturing method of claim 7, wherein the support body has a portion not covered by the covering material.
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