TW201526296A - Method of manufacturing optical semiconductor device and optical semiconductor device - Google Patents
Method of manufacturing optical semiconductor device and optical semiconductor device Download PDFInfo
- Publication number
- TW201526296A TW201526296A TW103130890A TW103130890A TW201526296A TW 201526296 A TW201526296 A TW 201526296A TW 103130890 A TW103130890 A TW 103130890A TW 103130890 A TW103130890 A TW 103130890A TW 201526296 A TW201526296 A TW 201526296A
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- Taiwan
- Prior art keywords
- optical semiconductor
- composition
- semiconductor device
- curable
- oxide
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 126
- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 239000000203 mixture Substances 0.000 claims abstract description 177
- 239000007809 chemical reaction catalyst Substances 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 80
- 238000005984 hydrogenation reaction Methods 0.000 claims description 65
- 229920002098 polyfluorene Polymers 0.000 claims description 56
- 239000003054 catalyst Substances 0.000 claims description 42
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 37
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 33
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 25
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 239000011256 inorganic filler Substances 0.000 claims description 19
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 18
- 229910052697 platinum Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- 239000012463 white pigment Substances 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 5
- 238000006068 polycondensation reaction Methods 0.000 claims description 5
- 239000002683 reaction inhibitor Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 abstract description 35
- 238000003860 storage Methods 0.000 abstract description 9
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 238000006459 hydrosilylation reaction Methods 0.000 abstract 4
- 238000002845 discoloration Methods 0.000 abstract 1
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- 239000000565 sealant Substances 0.000 description 63
- 125000003944 tolyl group Chemical group 0.000 description 41
- 229910052703 rhodium Inorganic materials 0.000 description 28
- 239000010948 rhodium Substances 0.000 description 28
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 28
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 24
- 238000005562 fading Methods 0.000 description 23
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- 238000011156 evaluation Methods 0.000 description 16
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 14
- 238000012360 testing method Methods 0.000 description 13
- 239000002131 composite material Substances 0.000 description 12
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- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
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- 239000000243 solution Substances 0.000 description 8
- 239000003365 glass fiber Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000002318 adhesion promoter Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
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- 229920000193 polymethacrylate Polymers 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000003223 protective agent Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 229930040373 Paraformaldehyde Natural products 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
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- 238000013329 compounding Methods 0.000 description 3
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- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 3
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- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
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- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- MTDLVDBRMBSPBJ-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC MTDLVDBRMBSPBJ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000005337 ground glass Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 125000002328 sterol group Chemical group 0.000 description 2
- GRGVQLWQXHFRHO-AATRIKPKSA-N (e)-3-methylpent-3-en-1-yne Chemical compound C\C=C(/C)C#C GRGVQLWQXHFRHO-AATRIKPKSA-N 0.000 description 1
- AGGJWJFEEKIYOF-UHFFFAOYSA-N 1,1,1-triethoxydecane Chemical compound CCCCCCCCCC(OCC)(OCC)OCC AGGJWJFEEKIYOF-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- HMVBQEAJQVQOTI-UHFFFAOYSA-N 3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)C=C(C)C#C HMVBQEAJQVQOTI-UHFFFAOYSA-N 0.000 description 1
- 125000006201 3-phenylpropyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- ZUGAOYSWHHGDJY-UHFFFAOYSA-K 5-hydroxy-2,8,9-trioxa-1-aluminabicyclo[3.3.2]decane-3,7,10-trione Chemical compound [Al+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ZUGAOYSWHHGDJY-UHFFFAOYSA-K 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 1
- AAVQACKPQVDAEK-UHFFFAOYSA-N C(C(=C)C)(=O)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(C(=C)C)(=O)OCCCC(C(OCC)(OCC)OCC)CCCCCCCC AAVQACKPQVDAEK-UHFFFAOYSA-N 0.000 description 1
- VPLKXGORNUYFBO-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC VPLKXGORNUYFBO-UHFFFAOYSA-N 0.000 description 1
- ZQBSPSZMRYBLLZ-UHFFFAOYSA-N CC(CCCCCCCCCCl)(C)C Chemical compound CC(CCCCCCCCCCl)(C)C ZQBSPSZMRYBLLZ-UHFFFAOYSA-N 0.000 description 1
- QHJSCTNRFWNYID-UHFFFAOYSA-N CCC=COCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound CCC=COCCCC(C(OC)(OC)OC)CCCCCCCC QHJSCTNRFWNYID-UHFFFAOYSA-N 0.000 description 1
- OOEPCYUEHQHNST-UHFFFAOYSA-N COC(C(OCC)(OCC)OCC)(CCCCCCCC)CCC.C=CC Chemical compound COC(C(OCC)(OCC)OCC)(CCCCCCCC)CCC.C=CC OOEPCYUEHQHNST-UHFFFAOYSA-N 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical compound [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000004200 deflagration Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000008282 halocarbons Chemical group 0.000 description 1
- JMBPWMGVERNEJY-UHFFFAOYSA-N helium;hydrate Chemical compound [He].O JMBPWMGVERNEJY-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002923 oximes Chemical group 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012763 reinforcing filler Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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Abstract
Description
本發明係關於光半導體裝置之製造方法,且尤其係關於其中可實現光半導體裝置之密封劑之儲存穩定性、且密封劑具有良好耐熱性並可極大地抵抗褪色之光半導體裝置的製造方法,及藉由該製造方法獲得之光半導體裝置。 The present invention relates to a method of fabricating an optical semiconductor device, and more particularly to a method of fabricating an optical semiconductor device in which the storage stability of an encapsulant of an optical semiconductor device can be achieved, and the encapsulant has good heat resistance and can greatly resist fading. And an optical semiconductor device obtained by the manufacturing method.
本發明主張於2013年9月5日提出申請之日本專利申請案第2013-184438號之優先權,該申請案之內容以引用方式併入本文中。 The present invention claims priority to Japanese Patent Application No. 2013-184438, filed on Sep. 5, 2013, the content of which is hereby incorporated by reference.
使用因矽氫化反應固化之可固化聚矽氧組合物作為密封劑、塗覆劑、透鏡模製材料、光反射材料及諸如此類用於光半導體裝置(例如光耦合器、發光二極體、固態影像感測器及諸如此類)中之光半導體元件。例如,在專利文件1中提出可固化聚矽氧組合物,該組合物係由以下各項構成:每分子中具有平均不少於0.2個矽鍵結烯基之有機聚矽氧烷、具有三維網絡結構之有機聚矽氧烷、每分子中具有不少於兩個矽鍵結氫原子之有機聚矽氧烷及矽氫化反應觸媒。另外,在專利文件2中提出可固化聚矽氧組合物,該組合物係由以下各項構成:具有矽鍵結苯基及矽鍵結烯基之有機聚矽氧烷、具有矽鍵結氫原子之有機聚矽氧烷及矽氫化反應觸媒。 A curable polysiloxane composition cured by a hydrogenation reaction is used as a sealant, a coating agent, a lens molding material, a light reflective material, and the like for an optical semiconductor device (for example, an optical coupler, a light-emitting diode, a solid-state image) Optical semiconductor components in sensors and the like. For example, in Patent Document 1, a curable polydecene oxide composition is proposed which is composed of an organopolysiloxane having an average of not less than 0.2 fluorenyl alkenyl groups per molecule, having a three-dimensional shape The organic polyoxane of the network structure, the organic polyoxane having no less than two hydrazine-bonded hydrogen atoms per molecule, and the hydrazine hydrogenation reaction catalyst. Further, Patent Document 2 proposes a curable polydecene oxide composition which is composed of an organopolysiloxane having a fluorene-bonded phenyl group and a fluorenyl-bonded alkenyl group, having a hydrazine-bonded hydrogen group. Atomic organic polyoxane and hydrazine hydrogenation catalyst.
在該等可固化聚矽氧組合物中,添加反應控制劑以阻抑矽氫化 反應,此乃因即使在室溫下仍可進行矽氫化反應;然而,該等組合物具有黏度隨時間增加之問題。 In the curable polyoxo composition, a reaction control agent is added to suppress hydrogenation The reaction is because the hydrazine hydrogenation reaction can be carried out even at room temperature; however, the compositions have a problem that the viscosity increases with time.
另外,在該等可固化聚矽氧組合物中,除非添加矽氫化反應觸媒,否則無法進行矽氫化反應,故阻抑黏度升高。然而,業內認為由於反應無法開始進行,故需要添加矽氫化反應觸媒,且亦認為無法將由不含矽氫化反應觸媒之組合物構成之密封劑或諸如此類作為產品提供。 Further, in the curable polyoxosiloxane compositions, the rhodium hydrogenation reaction cannot be carried out unless a rhodium hydrogenation catalyst is added, so that the viscosity is increased. However, it is considered in the art that since the reaction cannot be started, it is necessary to add a rhodium hydrogenation catalyst, and it is also considered that a sealant composed of a composition containing no rhodium hydrogenation catalyst or the like cannot be provided as a product.
另外,除上述問題外,習用固化聚矽氧具有以下問題。儘管高耐熱性為光半導體元件之密封劑所必需,但由於密封劑直接接受元件所產生之熱,故習用固化聚矽氧在暴露於高溫下時黃化。 Further, in addition to the above problems, the conventional curing polyfluorene has the following problems. Although high heat resistance is necessary for the sealing agent of the optical semiconductor element, since the sealant directly receives the heat generated by the element, the conventional cured polyfluorene oxide is yellowed upon exposure to high temperature.
專利文件1:日本未審查專利申請公開案第2006-213789號 Patent Document 1: Japanese Unexamined Patent Application Publication No. 2006-213789
專利文件2:日本未審查專利申請公開案第2009-185226號 Patent Document 2: Japanese Unexamined Patent Application Publication No. 2009-185226
考慮到上述因素,本發明之目標係提供其中可實現光半導體裝置之密封劑之儲存穩定性、且密封劑具有良好耐熱性、且甚至在暴露於高溫下時仍可極大地抵抗褪色之光半導體裝置的製造方法,及藉由該製造方法獲得之光半導體裝置。 In view of the above factors, an object of the present invention is to provide an optical semiconductor in which the storage stability of an encapsulant of an optical semiconductor device can be achieved, and the encapsulant has good heat resistance, and can be greatly resistant to fading even when exposed to a high temperature. A method of manufacturing a device, and an optical semiconductor device obtained by the method.
由於為解決上述問題所做出的勤奮研究,本發明者發現,藉由使用因矽氫化反應固化且含有極少或不含矽氫化反應觸媒之可固化聚矽氧組合物作為光半導體元件之密封劑並藉由將含有矽氫化反應觸媒之固化聚矽氧佈置為與密封劑分開之部件,可阻抑因密封劑含有矽氫化反應觸媒之事實引起之褪色,且可實現良好耐熱性。其亦發現,由 於形成密封劑之可固化聚矽氧組合物本身並不固化,故通常以兩部分形式提供之可固化聚矽氧組合物可以一部分形式來提供,且因此可避免兩部分之混合操作及混合後之脫氣操作的複雜性,並可防止混合時複合之錯誤。 As a result of diligent research to solve the above problems, the inventors have found that by using a curable polysiloxane composition which is cured by a hydrogenation reaction and contains little or no hydrogenation catalyst, it is used as a sealing of an optical semiconductor element. Further, by disposing the cured polyfluorene oxygen containing the hydrazine hydrogenation reaction catalyst as a member separate from the sealant, fading due to the fact that the sealant contains a hydrogenation reaction catalyst can be suppressed, and good heat resistance can be achieved. It also found that Since the curable polyoxynoxy composition forming the sealant itself does not cure, the curable polyoxynoxy composition which is usually provided in two parts can be provided in part, and thus the mixing operation and mixing of the two parts can be avoided. The complexity of the degassing operation and the prevention of compounding errors during mixing.
即,本發明之第一實施例係光半導體裝置之製造方法,其包括使用可固化聚矽氧組合物密封光半導體元件之步驟,其中儘管可固化聚矽氧組合物係藉由矽氫化反應來固化,但其不含矽氫化反應觸媒,或若可固化聚矽氧組合物確實含有矽氫化反應觸媒,則矽氫化反應觸媒之含量不足以使組合物固化;且光半導體元件經密封呈其中可固化聚矽氧組合物接觸含有矽氫化反應觸媒之固化聚矽氧之狀態。 That is, the first embodiment of the present invention is a method of manufacturing an optical semiconductor device comprising the step of sealing an optical semiconductor element using a curable polydecene oxide composition, wherein the curable polyoxo composition is hydrogenated by a hydrazine reaction Curing, but it does not contain a rhodium hydrogenation catalyst, or if the curable polyoxo composition does contain a rhodium hydrogenation catalyst, the rhodium hydrogenation catalyst is insufficient to cure the composition; and the optical semiconductor component is sealed It is in a state in which the curable polyoxynene composition is contacted with the cured polyfluorene containing a hydrogenation-reactive catalyst.
另外,可固化聚矽氧組合物包括:(A)至少一種類型之每分子中具有不少於兩個矽鍵結烯基之有機聚矽氧烷,及(B)至少一種類型之每分子中具有不少於兩個矽鍵結氫原子之有機聚矽氧烷,且不含矽氫化反應觸媒,或若可固化聚矽氧組合物確實含有矽氫化反應觸媒,則矽氫化反應觸媒之含量較佳不足以使組合物固化。 Further, the curable polydecene oxide composition comprises: (A) at least one type of organopolyoxyalkylene having at least two fluorenyl alkenyl groups per molecule, and (B) at least one type per molecule An organopolysiloxane having not less than two hydrazine-bonded hydrogen atoms, and which does not contain a hydrazine hydrogenation catalyst, or a hydrazine hydrogenation catalyst if the viscous polyoxyl composition does contain a hydrazine hydrogenation catalyst The amount is preferably insufficient to cure the composition.
矽氫化反應觸媒較佳係基於鉑之觸媒,且可固化聚矽氧組合物較佳不含矽氫化反應抑制劑。 The rhodium hydrogenation catalyst is preferably a platinum-based catalyst, and the curable polydecane oxygen composition is preferably free of the rhodium hydrogenation reaction inhibitor.
另外,固化聚矽氧較佳係光反射材料、基板、壩材料或含螢光物質之板。 Further, the cured polyfluorene is preferably a light-reflecting material, a substrate, a dam material or a plate containing a fluorescent substance.
另外、固化聚矽氧較佳含有至少一種類型之選自由以下組成之群之白色顏料:氧化鈦、氧化鋅、鈦酸鋇、硫酸鋇及氧化鋯,且較佳含有至少一種類型之選自由以下組成之群之無機填充劑:非球狀二氧化矽、球狀二氧化矽及玻璃纖維。 Further, the cured polyfluorene preferably contains at least one type of white pigment selected from the group consisting of titanium oxide, zinc oxide, barium titanate, barium sulfate, and zirconium oxide, and preferably contains at least one type selected from the following Inorganic fillers of the group: non-spherical cerium oxide, spherical cerium oxide and glass fiber.
本發明之另一實施例係藉由上述製造光半導體裝置之方法製造之光半導體裝置。 Another embodiment of the present invention is an optical semiconductor device manufactured by the above method of manufacturing an optical semiconductor device.
根據本發明,可提供其中光半導體裝置之密封劑實現儲存穩定性、具有良好耐熱性並可極大地抵抗褪色的光半導體裝置之製造方法;且可提供藉由該製造方法獲得之光半導體裝置。 According to the present invention, it is possible to provide a method of manufacturing an optical semiconductor device in which a sealant of an optical semiconductor device achieves storage stability, has good heat resistance, and can greatly resist fading; and an optical semiconductor device obtained by the manufacturing method can be provided.
由於密封劑甚至在其暴露於高溫下仍為光透明或白色,故藉由本發明製造方法獲得之光半導體裝置亦可單獨或與多個基板組合用於電及電子部件或光元件。 Since the encapsulant is optically transparent or white even when exposed to high temperatures, the optical semiconductor device obtained by the manufacturing method of the present invention can be used alone or in combination with a plurality of substrates for electrical and electronic components or optical components.
1‧‧‧光半導體元件 1‧‧‧Optical semiconductor components
2‧‧‧引線框架 2‧‧‧ lead frame
3‧‧‧引線框架 3‧‧‧ lead frame
4‧‧‧接合線 4‧‧‧bonding line
4'‧‧‧接合線 4'‧‧‧bonding line
5‧‧‧光反射材料/固化聚矽氧 5‧‧‧Light Reflective Material / Curing Polyoxygen
6‧‧‧密封劑 6‧‧‧Sealant
7‧‧‧基板 7‧‧‧Substrate
8‧‧‧壩材料 8‧‧‧ dam material
9‧‧‧框架材料 9‧‧‧Frame materials
10‧‧‧含螢光物質之板 10‧‧‧Board containing fluorescent substances
圖1係為本發明光半導體裝置之實例之LED之剖視圖。 1 is a cross-sectional view of an LED of an example of an optical semiconductor device of the present invention.
圖2係為本發明光半導體裝置之另一實例之LED的剖視圖。 2 is a cross-sectional view showing an LED of another example of the optical semiconductor device of the present invention.
圖3係為本發明光半導體裝置之另一實例之LED的剖視圖。 3 is a cross-sectional view showing an LED of another example of the optical semiconductor device of the present invention.
圖4係為本發明光半導體裝置之另一實例之LED的剖視圖。 4 is a cross-sectional view showing an LED of another example of the optical semiconductor device of the present invention.
下文將利用圖式明確闡述本發明之製造光半導體裝置之方法及光半導體裝置。 Hereinafter, a method of manufacturing an optical semiconductor device and an optical semiconductor device of the present invention will be clearly described using the drawings.
本發明光半導體裝置之製造方法包含使用可固化聚矽氧組合物密封光半導體元件之步驟。 The method of manufacturing an optical semiconductor device of the present invention comprises the step of sealing an optical semiconductor element using a curable polydecene oxide composition.
作為本發明之第一實施例,如圖1中所顯示,藉由以下方式來密封光半導體元件1:佈置含有矽氫化反應觸媒之固化聚矽氧(圖1中之光反射材料5),且然後使用因矽氫化反應固化且不含矽氫化反應觸媒、或若可固化聚矽氧組合物確實含有矽氫化反應觸媒則含量不足以使組合物固化之可固化聚矽氧組合物,使由該可固化聚矽氧組合物構成之密封劑6與固化聚矽氧5接觸。 As a first embodiment of the present invention, as shown in FIG. 1, the optical semiconductor element 1 is sealed by disposing a cured polyfluorene oxide (light-reflecting material 5 in FIG. 1) containing a hydrogenation-reactive catalyst, And then using a curable polyanthracene composition which is solidified by a hydrogenation reaction and which does not contain a rhodium hydrogenation catalyst, or which is insufficient in amount to cure the composition if the curable polyoxon composition does contain a rhodium hydrogenation catalyst, The sealant 6 composed of the curable polydecene oxide composition is brought into contact with the cured polyfluorene oxide 5.
由於可固化聚矽氧組合物含有極少或不含矽氫化反應觸媒,故可阻抑在高溫下由矽氫化反應觸媒引起之褪色。另外,由於可固化聚矽氧組合物固化反應本身可有效地藉由接觸密封劑之固化聚矽氧中之 矽氫化反應觸媒來實施,故可形成確保期望耐熱性及儲存穩定性之密封劑。 Since the curable polyoxynoxy composition contains little or no rhodium hydrogenation catalyst, fading caused by the rhodium hydrogenation catalyst at high temperatures can be suppressed. In addition, since the curing reaction of the curable polydecene oxide composition itself can be effectively cured by contact with the sealant Since the hydrogenation reaction catalyst is carried out, a sealant which ensures desired heat resistance and storage stability can be formed.
如上文所闡述,業內存在以下技術概念:通常,自阻抑在高溫下褪色之角度來看,組合物不含矽氫化反應觸媒。無論如何,在組合物不可避免地含有矽氫化反應觸媒之情形下及出於一些原因組合物含有痕量之情形下,規定「組合物不僅不含矽氫化反應觸媒」,且「若組合物確實含有矽氫化反應觸媒,則含量不足以使組合物固化」。 As explained above, the following technical concept exists in the industry: Generally, the composition does not contain a rhodium hydrogenation catalyst from the standpoint of fading at high temperatures. In any case, where the composition inevitably contains a rhodium hydrogenation catalyst and for some reasons the composition contains traces, it is stated that "the composition is not only free of the rhodium hydrogenation catalyst" and "if combined The substance does contain a rhodium hydrogenation catalyst and is insufficient in amount to cure the composition."
在本發明之製造方法中,將固化聚矽氧佈置於一定位置以接觸半導體元件周邊周圍之密封劑。 In the manufacturing method of the present invention, the cured polyfluorene oxide is disposed at a position to contact the sealant around the periphery of the semiconductor element.
固化聚矽氧在本文中意指藉由固化所規定可固化聚矽氧組合物獲得之材料,且在光半導體裝置中,固化聚矽氧並不限於特定者,前提係固化聚矽氧係經佈置以接觸密封劑之部件。特定實例包含光反射材料、基板、壩材料及含螢光物質之板。 The cured polyfluorene oxygen means herein a material obtained by curing the specified curable polyoxynoxy composition, and in the optical semiconductor device, the cured polyfluorene oxide is not limited to a specific one, provided that the cured polyfluorinated oxygen is arranged To contact the parts of the sealant. Specific examples include light reflective materials, substrates, dam materials, and plates containing fluorescent materials.
形成固化聚矽氧之組合物並不限於可固化系統,且可為任何系統,前提係該系統含有矽氫化反應觸媒。然而,其較佳係包括以下各項之可固化聚矽氧組合物:(a)每分子中具有不少於兩個矽鍵結烯基之有機聚矽氧烷,(b)每分子中具有不少於兩個矽鍵結氫原子之有機聚矽氧烷,及(c)矽氫化反應觸媒。 The composition forming the cured polyfluorene oxide is not limited to the curable system, and may be any system, provided that the system contains a rhodium hydrogenation reaction catalyst. However, it preferably comprises a curable polydecaneoxy composition of the following: (a) an organopolyoxyalkylene having not less than two fluorenyl alkenyl groups per molecule, (b) having one molecule per molecule Not less than two organopolyoxanes bonded to a hydrogen atom, and (c) a hydrogenation catalyst.
組份(a)中矽鍵結烯基之實例係乙烯基、芳基、丁烯基、戊烯基及己烯基,且乙烯基較佳。組份(a)中除烯基外鍵結至矽原子之基團的實例包含單價烴基團,例如甲基、乙基、丙基、丁基、戊基、己基、庚基或類似鏈烷基;環戊基、環己基或類似環烷基;苯基、甲苯基、二甲苯基、萘基或類似芳基;苄基、苯乙基、3-苯基丙基或類似芳烷基;氯甲基、3-氯丙基、3,3,3-三氟丙基、九氟丁基乙基或類似 鹵化烴基團。組份(a)之分子結構之實例包含直鏈,環狀,部分具支鏈之直鏈及具支鏈,但自其可賦予所獲得之固化聚矽氧足夠硬度及強度的角度來看,較佳使用至少一種類型之具支鏈有機聚矽氧烷作為組份(a)。在25℃下組份(a)之黏度較佳為1mPa.s至10,000mPa.s。 Examples of the oxime-bonded alkenyl group in the component (a) are a vinyl group, an aryl group, a butenyl group, a pentenyl group and a hexenyl group, and a vinyl group is preferred. Examples of the group (a) in which a group other than an alkenyl group is bonded to a halogen atom includes a monovalent hydrocarbon group such as a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group or a similar alkyl group. Cyclopentyl, cyclohexyl or similar cycloalkyl; phenyl, tolyl, xylyl, naphthyl or similar aryl; benzyl, phenethyl, 3-phenylpropyl or similar aralkyl; chlorine Methyl, 3-chloropropyl, 3,3,3-trifluoropropyl, nonafluorobutylethyl or the like Halogenated hydrocarbon groups. Examples of the molecular structure of component (a) include a linear, cyclic, partially branched linear chain and a branched chain, but from the viewpoint that it can impart sufficient hardness and strength to the obtained cured polyfluorene, It is preferred to use at least one type of branched organopolyoxyalkylene as component (a). The viscosity of component (a) at 25 ° C is preferably 1 mPa. s to 10,000mPa. s.
組份(b)中除氫原子外鍵結至矽之基團之實例包含與上文所闡述相同之單價烴基團。組份(b)之分子結構之實例包含直鏈、環狀、部分具支鏈之直鏈及具支鏈。自調節所獲得固化聚矽氧之硬度及強度的角度來看,具有複數種結構之組份(b)較佳係以組合形式使用。在25℃下,直鏈、環狀及部分具支鏈之直鏈組份(b)之黏度較佳為1mPa.s至10,000mPa.s。 Examples of the group of the component (b) which is bonded to the oxime other than the hydrogen atom contain the same monovalent hydrocarbon group as explained above. Examples of the molecular structure of the component (b) include a linear chain, a cyclic chain, a partially branched linear chain, and a branched chain. From the viewpoint of adjusting the hardness and strength of the cured polyfluorene obtained, the component (b) having a plurality of structures is preferably used in combination. At 25 ° C, the viscosity of the linear, cyclic and partially branched linear component (b) is preferably 1 mPa. s to 10,000mPa. s.
組合物中組份(b)之複合量可係足以使可固化聚矽氧組合物固化之量,且組份(b)中矽鍵結氫原子之量較佳係組份(a)中之1mol烯基中0.3mol至10mol。若在組份(a)中之1mol烯基中組份(b)中之矽鍵結氫原子之量低於此範圍,則因組合物往往固化不充分而不合意。另一方面,若其超過此範圍,則因所獲得固化聚矽氧之機械強度往往降低而不合意。 The compounding amount of the component (b) in the composition may be an amount sufficient to cure the curable polyoxynoxy composition, and the amount of the hydrazine-bonded hydrogen atom in the component (b) is preferably in the component (a). From 1 mol to 10 mol in 1 mol of the alkenyl group. If the amount of the hydrazine-bonded hydrogen atom in the component (b) in the 1 mol of the alkenyl group in the component (a) is less than this range, it is not desirable because the composition tends to be insufficiently cured. On the other hand, if it exceeds this range, it is undesired because the mechanical strength of the obtained cured polyfluorene is often lowered.
組份(c)之矽氫化反應觸媒係用於加速組合物之交聯之觸媒,較佳係基於鉑之觸媒。基於鉑之觸媒之實例包含氯鉑酸、氯鉑酸之醇溶液、鉑之烯烴錯合物、鉑之烯基矽氧烷錯合物、鉑黑及鉑載二氧化矽。其複合量以組合物中鉑金屬之質量單元計較佳係1ppm至1,000ppm。自加速作為密封劑之固化聚矽氧組合物固化的角度來看,其較佳不小於5ppm,且自增加所獲得固化聚矽氧之耐熱性的角度來看不大於100ppm。 The hydrogenation reaction catalyst of component (c) is used to accelerate the crosslinking of the composition, preferably based on a platinum catalyst. Examples of platinum-based catalysts include chloroplatinic acid, an alcohol solution of chloroplatinic acid, an olefin complex of platinum, an alkenyl alkane complex of platinum, platinum black, and platinum supported ruthenium dioxide. The compounding amount is preferably from 1 ppm to 1,000 ppm based on the mass of the platinum metal in the composition. From the standpoint of curing of the cured polyoxymethylene composition as the sealant, it is preferably not less than 5 ppm, and is not more than 100 ppm from the viewpoint of increasing the heat resistance of the cured polyfluorene.
組合物可含有之其他可選組份之實例包含矽氫化反應抑制劑,例如3-甲基-1-丁炔-3-醇、3,5-二甲基-1-己炔-3-醇、3-苯基-1-丁炔-3-醇或類似炔烴醇;3-甲基-3-戊烯-1-炔及3,5-二甲基-3-己烯-1-炔或類 似烯-炔化合物;1,3,5,7-四甲基-1,3,5-四乙烯基環四矽氧烷、1,3,5,7-四甲基-1,3,5,7-四己烯基環四矽氧烷及苯并三唑。矽氫化反應抑制劑之含量以質量單元計較佳係組合物的10ppm至50,000ppm。 Examples of other optional components which the composition may contain include hydrazine hydrogenation inhibitors such as 3-methyl-1-butyn-3-ol, 3,5-dimethyl-1-hexyn-3-ol , 3-phenyl-1-butyn-3-ol or similar alkyne alcohol; 3-methyl-3-penten-1-yne and 3,5-dimethyl-3-hexene-1-yne Or class Iso-alkyne compound; 1,3,5,7-tetramethyl-1,3,5-tetravinylcyclotetraoxane, 1,3,5,7-tetramethyl-1,3,5 , 7-tetrahexenylcyclotetraoxane and benzotriazole. The content of the hydrazine reaction inhibitor is preferably from 10 ppm to 50,000 ppm based on the mass of the composition.
當使用固化聚矽氧作為光半導體裝置之光反射材料時,出於增加白度之目的,在構成固化聚矽氧之組合物中較佳含有白色顏料。白色顏料之實例包含金屬氧化物,例如氧化鈦、氧化鋁、氧化鋅、氧化鋯及氧化鎂;及硫酸鋇、硫酸鋅、鈦酸鋇、氮化鋁、氮化硼、氮化銻及諸如此類。自高光反射率及封阻能力的角度來看,氧化鈦較佳,且自UV範圍內之光反射率的角度來看,氧化鋅或鈦酸鋇較佳。 When the cured polyfluorene oxide is used as the light-reflecting material of the optical semiconductor device, it is preferred to contain a white pigment in the composition constituting the cured polysiloxane for the purpose of increasing whiteness. Examples of the white pigment include metal oxides such as titanium oxide, aluminum oxide, zinc oxide, zirconium oxide, and magnesium oxide; and barium sulfate, zinc sulfate, barium titanate, aluminum nitride, boron nitride, tantalum nitride, and the like. From the viewpoint of high light reflectance and blocking ability, titanium oxide is preferred, and zinc oxide or barium titanate is preferred from the viewpoint of light reflectance in the UV range.
儘管並不限制白色顏料之形狀及平均粒徑,但平均粒徑較佳係0.05μm至10.0μm,且尤佳係0.1μm至5.0μm。為增加含有樹脂及無機填充劑之白色顏料之相容性及分散能力,可使用矽烷偶合劑、二氧化矽、氧化鋁或諸如此類對白色顏料進行表面處理。 Although the shape and average particle diameter of the white pigment are not limited, the average particle diameter is preferably from 0.05 μm to 10.0 μm, and particularly preferably from 0.1 μm to 5.0 μm. In order to increase the compatibility and dispersibility of the white pigment containing the resin and the inorganic filler, the white pigment may be surface-treated with a decane coupling agent, cerium oxide, aluminum oxide or the like.
白色顏料之添加量不小於50質量份數,且較佳不小於60質量份數/總共100質量份數組份(a)及(b)。此乃因固化聚矽氧之光反射率在含量不小於此下限時良好。 The white pigment is added in an amount of not less than 50 parts by mass, and preferably not less than 60 parts by mass per 100 parts by mass of the array parts (a) and (b). This is because the light reflectance of the cured polyfluorene is good when the content is not less than the lower limit.
當使用固化聚矽氧作為光反射材料時,由於需要固化聚矽氧之尺寸穩定性,故出於減小所獲得固化聚矽氧之線性膨脹係數之目的,若構成固化聚矽氧之組合物中含有某一無機填充劑則較佳。無機填充劑之實例包含球狀二氧化矽、非球狀二氧化矽及玻璃纖維。無機填充劑之球狀二氧化矽之實例包含乾法二氧化矽、濕法二氧化矽、發煙二氧化矽及爆燃法二氧化矽,但發煙二氧化矽因在本發明組合物中展現良好的填充特性而較佳。無機填充劑之非球狀二氧化矽之實例包含石英粉及玻璃珠,但石英粉較佳。無機填充劑之玻璃纖維之實例包含切斷玻璃纖維及研磨玻璃纖維,但研磨玻璃纖維較佳。 When the cured polyfluorene oxide is used as the light reflective material, the composition constituting the cured polyfluorene oxide is used for the purpose of reducing the linear expansion coefficient of the obtained cured polyfluorene oxygen due to the dimensional stability of the cured polyfluorene oxide. It is preferred to contain an inorganic filler. Examples of the inorganic filler include spherical cerium oxide, non-spherical cerium oxide, and glass fiber. Examples of the spherical cerium oxide of the inorganic filler include dry cerium oxide, wet cerium oxide, fumed cerium oxide, and deflagration cerium oxide, but fumed cerium oxide is exhibited in the composition of the present invention. Good filling characteristics are preferred. Examples of the non-spherical cerium oxide of the inorganic filler include quartz powder and glass beads, but quartz powder is preferred. Examples of the glass fiber of the inorganic filler include the cut glass fiber and the ground glass fiber, but the ground glass fiber is preferred.
並不限制用於無機填充劑之球狀二氧化矽之粒徑,但平均粒徑 較佳係0.1μm至50μm,且尤佳係0.5μm至30μm。並不限制用於無機填充劑之非球狀二氧化矽之粒徑,但平均粒徑較佳係0.1μm至50μm,且尤佳係0.5μm至30μm。並不限制用於無機填充劑之玻璃纖維之形狀,但該等纖維之直徑較佳係1μm至50μm,且尤佳係5μm至20μm,且該等纖維之長度較佳係5μm至500μm,且尤佳係10μm至300μm。 The particle size of the spherical cerium oxide used for the inorganic filler is not limited, but the average particle diameter It is preferably from 0.1 μm to 50 μm, and particularly preferably from 0.5 μm to 30 μm. The particle diameter of the non-spherical cerium oxide used for the inorganic filler is not limited, but the average particle diameter is preferably from 0.1 μm to 50 μm, and particularly preferably from 0.5 μm to 30 μm. The shape of the glass fibers used for the inorganic filler is not limited, but the diameter of the fibers is preferably from 1 μm to 50 μm, and particularly preferably from 5 μm to 20 μm, and the length of the fibers is preferably from 5 μm to 500 μm. Preferably, the system is 10 μm to 300 μm.
無機填充劑之含量不小於100質量份數,且較佳不小於120質量份數/100質量份數組份(a)及(b)。當無機填充劑之含量不小於此範圍之下限時,所獲得固化產品之線性膨脹係數較低且尺寸穩定性良好。 The content of the inorganic filler is not less than 100 parts by mass, and preferably not less than 120 parts by mass per 100 parts by mass of the array parts (a) and (b). When the content of the inorganic filler is not less than the lower limit of the range, the obtained cured product has a low linear expansion coefficient and good dimensional stability.
顏料組份及無機填充劑組份之總含量不大於700質量份數,且較佳不大於600質量份數/100質量份數組份(a)及(b)。當顏料組份及無機填充劑組份之總含量不大於上文所提及之上限時,所獲得組合物之黏度良好。 The total content of the pigment component and the inorganic filler component is not more than 700 parts by mass, and preferably not more than 600 parts by mass per 100 parts by mass of the array parts (a) and (b). When the total content of the pigment component and the inorganic filler component is not more than the upper limit mentioned above, the viscosity of the obtained composition is good.
另外,當使用固化聚矽氧作為光反射材料時,可視需要將多種添加劑複合於構成固化聚矽氧之組合物中。可含有之其他可選組份包含除球狀二氧化矽、非球狀二氧化矽及玻璃纖維外之無機填充劑;有機樹脂(例如聚甲基丙烯酸酯樹脂及聚矽氧樹脂)之細粉;脫模劑,例如棕櫚蠟、高碳數脂肪酸、高碳數脂肪酸之金屬鹽及甲基聚矽氧油;耐熱劑;阻燃劑;溶劑;及諸如此類。 Further, when the cured polyfluorene oxide is used as the light-reflecting material, various additives may be compounded in the composition constituting the cured polyfluorene oxide as needed. Other optional components which may be contained include inorganic fillers other than spherical cerium oxide, non-spherical cerium oxide and glass fibers; fine powders of organic resins (for example, polymethacrylate resin and polyoxyl resin) a release agent such as palm wax, a high carbon number fatty acid, a metal salt of a high carbon number fatty acid, and a methyl polyoxyphthalic acid; a heat resistant agent; a flame retardant; a solvent; and the like.
當使用固化聚矽氧作為除光反射材料外之其他物項(例如含螢光體之板)時,可視需要將多種添加劑複合於構成固化聚矽氧之組合物中。可含有之其他可選組份包含除球狀二氧化矽、非球狀二氧化矽及玻璃纖維外之無機填充劑;有機樹脂(例如聚甲基丙烯酸酯樹脂及聚矽氧樹脂)之細粉;耐熱劑;染料;顏料、螢光物質;阻燃劑;溶劑;及諸如此類。 When solidified polyfluorene oxide is used as a material other than the light-reflecting material (for example, a plate containing a phosphor), a plurality of additives may be compounded in the composition constituting the cured polysiloxane as needed. Other optional components which may be contained include inorganic fillers other than spherical cerium oxide, non-spherical cerium oxide and glass fibers; fine powders of organic resins (for example, polymethacrylate resin and polyoxyl resin) ; heat resistant agent; dye; pigment, fluorescent substance; flame retardant; solvent; and the like.
使用本發明之製造方法,使用因矽氫化反應固化且不含矽氫化反應觸媒、或若可固化聚矽氧組合物確實含有矽氫化反應觸媒則含量不足以使組合物固化之可固化聚矽氧組合物密封半導體元件。 By using the production method of the present invention, a curable poly group which is solidified by a hydrogenation reaction and which does not contain a rhodium hydrogenation catalyst, or which is insufficient in content to cure the composition if the curable polyoxon composition does contain a rhodium hydrogenation catalyst The ruthenium oxygen composition seals the semiconductor component.
與構成固化聚矽氧之組合物相似,用於本發明中之可固化聚矽氧組合物包括:(A)至少一種類型之每分子中具有不少於兩個矽鍵結烯基之有機聚矽氧烷,及(B)至少一種類型之每分子中具有不少於兩個矽鍵結氫原子之有機聚矽氧烷,且不含矽氫化反應觸媒,或若可固化聚矽氧組合物確實含有矽氫化反應觸媒,則含量較佳不足以使組合物固化。上文所提及之組合物較佳不含矽氫化反應觸媒,或若可固化聚矽氧組合物確實含有矽氫化反應觸媒,則矽氫化反應觸媒含有相對於組合物之質量不大於0.1ppm之金屬原子。 Similar to the composition constituting the cured polyfluorene oxide, the curable polydecene oxide composition used in the present invention comprises: (A) at least one type of organic polycondensation having not less than two fluorene-bonded alkenyl groups per molecule a siloxane, and (B) at least one type of organopolyoxy siloxane having not less than two hydrazine-bonded hydrogen atoms per molecule, and which does not contain a hydrazine hydrogenation catalyst, or a curable polyoxygen combination The material does contain a rhodium hydrogenation catalyst, and the amount is preferably insufficient to cure the composition. The composition mentioned above preferably does not contain a rhodium hydrogenation catalyst, or if the curable polyoxo composition does contain a rhodium hydrogenation catalyst, the rhodium hydrogenation catalyst contains no more than the mass of the composition. 0.1ppm metal atom.
另外,形成固化聚矽氧或密封劑之可固化聚矽氧組合物可含有多種助黏劑以改良與多種材料之黏著。該等助黏劑之實例包含:具有約4至20個矽原子之有機矽烷或直鏈、具支鏈或環狀有機矽氧烷寡聚物,其具有三烷氧基矽氧基(例如,三甲氧基矽氧基或三乙氧基矽氧基)或三烷氧基矽基烷基(例如,三甲氧基矽基乙基或三乙氧基矽基乙基)及氫矽基或烯基(例如,乙烯基或烯丙基);具有約4至20個矽原子之有機矽烷或直鏈、具支鏈或環狀有機矽氧烷寡聚物,其具有三烷氧基矽氧基或三烷氧基矽基烷基及甲基丙烯醯氧基烷基(例如,3-甲基丙烯醯氧基丙基);具有約4至20個矽原子之有機矽烷或直鏈、具支鏈或環狀有機矽氧烷寡聚物,其具有三烷氧基矽氧基或三烷氧基矽基烷基及環氧基鍵結烷基(例如,3-縮水甘油氧基丙基、4-縮水甘油氧基丁基、2-(3,4-環氧基環己基)乙基或3-(3,4-環氧基環己基)丙基);及胺 基烷基三烷氧基矽烷與環氧基鍵結烷基三烷氧基矽烷的反應產物以及含環氧基之聚矽酸乙酯。助黏劑之特定實例包含:乙烯基三甲氧基矽烷、烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷、氫三乙氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷與3-胺基丙基三乙氧基矽烷之反應產物、矽醇基團封端甲基乙烯基矽氧烷寡聚物與3-縮水甘油氧基丙基三甲氧基矽烷之縮合反應產物、矽醇基團封端甲基乙烯基矽氧烷寡聚物與3-甲基丙烯醯氧基丙基三乙氧基矽烷之縮合反應產物、異氰尿酸叁(3-三甲氧基矽基丙基)酯、酸酐及諸如此類。該等助黏劑較佳係低黏度液體,且並不具體限制其在25℃下之黏度但較佳係1mPa.s至500mPa.s。並不具體限制助黏劑之含量,但較佳係相對於組合物中之總共100質量份數組份(A)及(B)0.01至10質量份數。若將上文所提及之各別助黏劑添加至可固化聚矽氧組合物中,其相同或不同並不重要。 Additionally, the curable polyoxynoxy composition that forms the cured polyoxo or sealant can contain a variety of adhesion promoters to improve adhesion to a variety of materials. Examples of such adhesion promoters include: an organic decane having from about 4 to 20 germanium atoms or a linear, branched or cyclic organooxyalkylene oligomer having a trialkoxymethoxy group (for example, Trimethoxymethoxy or triethoxymethoxy) or trialkoxyalkylalkyl (for example, trimethoxydecylethyl or triethoxydecylethyl) and hydroquinone or alkene a base (for example, a vinyl or allyl group); an organodecane having from about 4 to 20 ruthenium atoms or a linear, branched or cyclic organooxane oligomer having a trialkoxymethoxy group Or a trialkoxyalkylalkyl group and a methacryloxyalkyl group (for example, 3-methacryloxypropyl); an organic decane having about 4 to 20 ruthenium atoms or a straight chain a chain or cyclic organooxane oligomer having a trialkoxymethoxy or tripaloxyalkylalkyl group and an epoxy-bonded alkyl group (eg, 3-glycidoxypropyl group, 4-glycidoxybutyl, 2-(3,4-epoxycyclohexyl)ethyl or 3-(3,4-epoxycyclohexyl)propyl); and amine The reaction product of an alkylalkyltrialkoxydecane with an epoxy-bonded alkyltrialkoxydecane and an epoxy group-containing polycaprate. Specific examples of adhesion promoters include: vinyl trimethoxy decane, allyl trimethoxy decane, allyl triethoxy decane, hydrogen triethoxy decane, 3-glycidoxy propyl trimethoxy Decane, 3-glycidoxypropyltriethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 3-methylpropenyloxypropyltrimethoxydecane , a reaction product of 3-methacryloxypropyltriethoxydecane, 3-glycidoxypropyltriethoxydecane and 3-aminopropyltriethoxydecane, a sterol group Condensation reaction product of blocked methyl vinyl siloxane oligomer with 3-glycidoxypropyl trimethoxy decane, sterol group terminated methyl vinyl siloxane oligomer and 3-methyl The condensation reaction product of propylene methoxy propyl triethoxy decane, bismuth (3-trimethoxymercaptopropyl) isocyanurate, an acid anhydride, and the like. The adhesion promoters are preferably low viscosity liquids, and are not particularly limited in viscosity at 25 ° C but preferably 1 mPa. s to 500mPa. s. The content of the adhesion promoter is not particularly limited, but is preferably 0.01 to 10 parts by mass relative to the total of 100 parts by mass of the composition (A) and (B) in the composition. If the respective adhesion promoters mentioned above are added to the curable polydecene oxide composition, it is not important that they are the same or different.
另外,可固化聚矽氧組合物較佳不含矽氫化反應抑制劑。此乃因由於本發明之可固化聚矽氧組合物開始即不含或實質上不含矽氫化反應觸媒,故無需添加矽氫化反應抑制劑。業內認為即使在不具矽氫化反應觸媒的情況下仍可進行可固化聚矽氧組合物之固化的原因在於,矽氫化反應觸媒在固化期間自接觸其之固化聚矽氧遷移。然而,當可固化聚矽氧組合物含有矽氫化反應抑制劑時,此遷移受阻且固化最終變緩慢。 Additionally, the curable polydecene oxide composition is preferably free of the rhodium hydrogenation reaction inhibitor. This is because since the curable polyoxynoxy composition of the present invention is initially free of or substantially free of the rhodium hydrogenation catalyst, it is not necessary to add a rhodium hydrogenation inhibitor. It is believed in the art that the curing of the curable polyanthracene composition can be carried out even without the hydrogenation reaction catalyst in that the rhodium hydrogenation catalyst migrates from the solidified polyoxane which contacts it during curing. However, when the curable polydecaneoxy composition contains a hydrazine hydrogenation reaction inhibitor, this migration is hindered and the curing eventually becomes slow.
當使用可固化聚矽氧組合物作為光半導體裝置之密封劑或透鏡材料時,可將多種填充劑複合為除上述強制組份外之可選組份,以改良藉由固化組合物獲得之聚矽氧層之機械強度,前提係保存本發明之目標。 When a curable polydecene oxide composition is used as a sealant or lens material for an optical semiconductor device, a plurality of fillers may be compounded into optional components other than the above-mentioned mandatory components to improve the aggregation obtained by curing the composition. The mechanical strength of the helium oxide layer is premised on the preservation of the object of the present invention.
填充劑之實例包含無機增強填充劑,例如沈澱二氧化矽、發煙二氧化矽、發煙二氧化矽及發煙氧化鈦;無機非增強填充劑,例如壓碎石英、矽藻土、鋁矽酸鹽、氧化鐵、氧化鋅及碳酸鈣;有機填充劑,例如聚甲基丙烯酸酯樹脂;及藉由使用有機矽化合物(例如六甲基矽氮烷、三甲基氯矽烷、聚二甲基矽氧烷或聚甲基氫矽氧烷)處理表面獲得之無機或有機填充劑。 Examples of the filler include inorganic reinforcing fillers such as precipitated cerium oxide, fumed cerium oxide, fumed cerium oxide, and fumed titanium oxide; inorganic non-reinforced fillers such as crushed quartz, diatomaceous earth, aluminum Citrate, iron oxide, zinc oxide and calcium carbonate; organic fillers such as polymethacrylate resins; and by using organic antimony compounds (eg hexamethylguanidine, trimethylchlorodecane, polydimethylene) An inorganic or organic filler obtained by treating the surface with a sulfoxane or polymethylhydroquinone.
該等填充劑之初始粒徑較佳不大於0.5μm,且更佳不大於0.1μm。控制其含量以使得可固化聚矽氧組合物之固化聚矽氧之透光率不小於80%,但其通常不大於可固化聚矽氧組合物之10質量%,較佳不大於5質量%,且更佳不大於1質量%。若認為密封劑及透鏡材料之透明度至關重要,則較佳不複合任何無機填充劑。 The initial particle diameter of the fillers is preferably not more than 0.5 μm, and more preferably not more than 0.1 μm. The content thereof is controlled so that the light transmittance of the cured polyfluorene oxide of the curable polydecene oxide composition is not less than 80%, but it is usually not more than 10% by mass, preferably not more than 5% by mass of the curable polydecene oxide composition. And more preferably not more than 1% by mass. If it is considered that the transparency of the sealant and the lens material is critical, it is preferred not to compound any inorganic filler.
另外,若使用可固化聚矽氧組合物作為光半導體裝置之密封劑或透鏡材料、作為除上文所提及填充劑外之組份,則可視需要複合多種添加劑。可含有之其他可選組份包含有機樹脂(例如聚甲基丙烯酸酯樹脂及聚矽氧樹脂)之細粉、耐熱劑、染料、顏料、螢光物質、阻燃劑、溶劑及諸如此類。 Further, if a curable polydecene oxide composition is used as a sealant or lens material of an optical semiconductor device, as a component other than the above-mentioned filler, a plurality of additives may be compounded as needed. Other optional components that may be included include fine powders of organic resins such as polymethacrylate resins and polyoxyxylene resins, heat resistant agents, dyes, pigments, fluorescent materials, flame retardants, solvents, and the like.
現將闡述使用上文所提及之可固化聚矽氧組合物獲得之上文所提及之固化聚矽氧及密封劑或諸如此類的複合材料(聚矽氧複合材料)。 The above-mentioned cured polyfluorene oxide and sealant or the like (polyoxynitride composite) obtained by using the curable polyoxyl composition mentioned above will now be explained.
並不具體限制構成本發明聚矽氧複合材料之固化聚矽氧之形狀,但若使用如圖1中所顯示之形狀,則密封劑6中之任一點至密封劑6與固化聚矽氧5之間之界面的最小距離較佳不大於5mm,且更佳不大於3mm。根據本發明,熱固化可固化聚矽氧組合物所需之固化觸媒來自毗鄰佈置之固化聚矽氧;因此,當其距與固化聚矽氧之界面太遠時,固化觸媒可能無法到達可固化聚矽氧組合物且固化將不充分。 由於此事實,由可固化聚矽氧組合物構成之密封劑可用於其中其在固化聚矽氧上散佈之塗覆應用中或其中聚矽氧化合物本身較少(例如用於光半導體裝置之光反射材料及密封劑之複合物)之電子材料應用中。 The shape of the cured polyfluorene oxide constituting the polyfluorene oxide composite material of the present invention is not particularly limited, but if a shape as shown in FIG. 1 is used, any one of the sealant 6 to the sealant 6 and the cured polyfluorene oxide 5 The minimum distance between the interfaces is preferably not more than 5 mm, and more preferably not more than 3 mm. According to the present invention, the curing catalyst required for the heat-curable curable polyoxo composition is derived from the adjacent disposed cured polyfluorene; therefore, when it is too far from the interface with the cured polyfluorene, the curing catalyst may not reach The polydecene oxide composition can be cured and curing will be insufficient. Due to this fact, a sealant composed of a curable polydecene oxide composition can be used in a coating application in which it is dispersed on a cured polyfluorene oxide or in which the polyoxynitride itself is less (for example, light for an optical semiconductor device) In the application of electronic materials for composites of reflective materials and sealants.
並不具體限制構成固化聚矽氧之聚矽氧組合物之固化溫度及上文所提及可固化聚矽氧組合物之固化溫度,但良好固化通常係自室溫至220℃來獲得。60℃至180℃之溫度下之固化較佳,且80℃至150℃之溫度下之固化更佳,此乃因其在聚矽氧層與基板之間產生強黏著。另外,分步固化較佳,其中在室溫至100℃、較佳60℃至80℃下加熱複合物,且然後在80℃至180℃、較佳100℃至150℃下加熱,此乃因在一些情形下進一步改良聚矽氧層與基板之間之黏著。 The curing temperature of the polyoxymethylene composition constituting the cured polyfluorene oxide and the curing temperature of the above-mentioned curable polyoxynoxy composition are not particularly limited, but good curing is usually obtained from room temperature to 220 °C. Curing at a temperature of from 60 ° C to 180 ° C is preferred, and curing at a temperature of from 80 ° C to 150 ° C is preferred because of the strong adhesion between the polysilicon layer and the substrate. Further, stepwise curing is preferred, wherein the composite is heated at room temperature to 100 ° C, preferably 60 ° C to 80 ° C, and then heated at 80 ° C to 180 ° C, preferably 100 ° C to 150 ° C. In some cases, the adhesion between the polysilicon layer and the substrate is further improved.
在本發明之聚矽氧複合材料與另一材料(例如基板)組合使用之情形下,並不具體限制基板之材料及形狀。基板可自有機物質(例如可熱固化樹脂及熱塑性樹脂)或多種結構主體(例如織物、非編織織物或多孔主體)來構建,且基板可具有多種形狀,例如板、棒、半球、球及諸如此類。另外,可視需要在本發明聚矽氧複合材料之表面上提供多個其他層,例如透明丙烯酸樹脂層。 In the case where the polyfluorene oxide composite material of the present invention is used in combination with another material such as a substrate, the material and shape of the substrate are not particularly limited. The substrate may be constructed from organic materials (eg, heat curable resins and thermoplastic resins) or a variety of structural bodies (eg, woven, non-woven fabric, or porous bodies), and the substrate may have a variety of shapes, such as plates, rods, hemispheres, balls, and the like. . In addition, a plurality of other layers, such as a transparent acrylic resin layer, may be provided on the surface of the polyoxyxene composite of the present invention as needed.
本發明之聚矽氧複合材料並不限於納入光半導體裝置中。聚矽氧複合材料本身可用作多種電及電子部件或醫療產品(例如繃帶),或可與多種基板(例如金屬基板、金屬氧化物基板、玻璃基板及塑膠膜)組合使用。另外,由於本發明之聚矽氧複合材料可具有光透明部分及反射部分二者,故可使用聚矽氧複合材料作為光元件之部分或整個部件。 The polyoxyn composite material of the present invention is not limited to being incorporated into an optical semiconductor device. The polyoxygen composite material itself can be used as a variety of electrical and electronic components or medical products (such as bandages), or can be used in combination with a variety of substrates (such as metal substrates, metal oxide substrates, glass substrates, and plastic films). In addition, since the polyfluorene oxide composite material of the present invention can have both a light transparent portion and a reflective portion, a polyoxynitride composite material can be used as a part or the entire member of the optical element.
現將解釋本發明之光半導體裝置。 The optical semiconductor device of the present invention will now be explained.
本發明之光半導體裝置之特徵在於藉由上述製造方法來製造。 The optical semiconductor device of the present invention is characterized in that it is manufactured by the above-described manufacturing method.
本發明之此一光半導體裝置之實例係發光二極體(LED)(參見圖1至4)。在圖1之光半導體裝置中,由固化聚矽氧構成之光反射材料5起光半導體裝置之框架材料(封裝材料)的作用,且密封劑6起光半導體元件1之保護劑的作用。在圖2之光半導體裝置中,具有固化聚矽氧之基板7起其上安裝光半導體元件1之基板的作用,且密封劑6起光半導體元件1之保護劑及透鏡材料的作用。在圖3之光半導體裝置中,由固化聚矽氧構成之壩材料8控制作為光半導體裝置之框架材料之密封劑6的流出,且密封劑6起光半導體元件1之保護劑的作用。在圖4之光半導體裝置中,由固化聚矽氧構成之含螢光體之板轉換來自光半導體元件之光的波長並使光擴散,且密封劑6起光半導體元件1之保護劑的作用。 An example of such an optical semiconductor device of the present invention is a light emitting diode (LED) (see Figs. 1 to 4). In the optical semiconductor device of FIG. 1, the light-reflecting material 5 composed of the cured polyfluorene oxide functions as a frame material (encapsulation material) of the optical semiconductor device, and the sealant 6 functions as a protective agent for the optical semiconductor element 1. In the optical semiconductor device of FIG. 2, the substrate 7 having the cured polyfluorene oxide functions as a substrate on which the optical semiconductor element 1 is mounted, and the sealant 6 functions as a protective agent and a lens material of the optical semiconductor element 1. In the optical semiconductor device of FIG. 3, the dam material 8 composed of the cured polyfluorene oxide controls the outflow of the sealant 6 as a frame material of the optical semiconductor device, and the sealant 6 functions as a protective agent for the optical semiconductor element 1. In the optical semiconductor device of FIG. 4, the phosphor-containing plate composed of the cured polyfluorene oxide converts the wavelength of light from the optical semiconductor element and diffuses the light, and the sealant 6 functions as a protective agent for the optical semiconductor element 1. .
在本發明之光半導體裝置中,如圖1中所圖解說明,藉由晶粒接合材料將光半導體元件1晶粒接合至引線框架2,且藉由接合線4、4'將此光半導體元件1線接合至引線框架2、3。在此光半導體元件1之周邊周圍,除其上部外,存在由固化聚矽氧構成之光反射材料5。藉由密封劑6密封此光反射材料5內之光半導體元件1。 In the optical semiconductor device of the present invention, as illustrated in FIG. 1, the optical semiconductor element 1 is die-bonded to the lead frame 2 by a die bonding material, and the optical semiconductor element is bonded by bonding wires 4, 4' One wire is bonded to the lead frames 2, 3. Around the periphery of the optical semiconductor element 1, except for the upper portion thereof, there is a light reflecting material 5 composed of solidified polyfluorene oxide. The optical semiconductor element 1 in the light-reflecting material 5 is sealed by a sealant 6.
製造圖1中所顯示之表面安裝型LED之流程圖係由以下方法來例示,該方法包含以下步驟:(1)藉由轉移模製、壓縮模製或注射模製矽氫化反應可固化聚矽氧組合物形成與引線框架2、3整合之光反射材料5,(2)使用晶粒接合材料將光半導體元件1晶粒接合於引線框架2上,(3)使用接合線4、4'線接合光半導體元件1與引線框架2、3,及(4)使用密封劑6密封光半導體元件1。 The flow chart for manufacturing the surface mount type LED shown in Fig. 1 is exemplified by the following method, which comprises the following steps: (1) Curable polycondensation by transfer molding, compression molding or injection molding hydrazine hydrogenation reaction The oxygen composition forms the light-reflecting material 5 integrated with the lead frames 2, 3, (2) the die-bonding material is used to bond the optical semiconductor element 1 to the lead frame 2, and (3) the bonding wires 4, 4' are used. The optical semiconductor element 1 is bonded to the lead frames 2, 3, and (4) the optical semiconductor element 1 is sealed using a sealant 6.
若光反射材料係藉由上文所提及之轉移模製、壓縮模製或注射模製來形成,則模製較佳係在110℃至170℃之溫度下實施60秒至300秒。可在130℃至180℃之溫度下實施約1小時至8小時之後固化。 If the light-reflecting material is formed by transfer molding, compression molding or injection molding as mentioned above, the molding is preferably carried out at a temperature of from 110 ° C to 170 ° C for from 60 seconds to 300 seconds. Curing can be carried out at a temperature of from 130 ° C to 180 ° C for about 1 hour to 8 hours.
另外,在本發明、之另一光半導體裝置中,如圖2中所圖解說 明,藉由晶粒接合材料將光半導體元件1晶粒接合至引線框架2,且藉由接合線4、4'將此光半導體元件1線接合至引線框架2、3。在基板7上接觸密封劑6之安裝光半導體元件1之部分上,存在上文所提及之固化聚矽氧,且藉由密封劑6密封光半導體元件1。 In addition, in another optical semiconductor device of the present invention, as illustrated in FIG. 2 The optical semiconductor element 1 is die-bonded to the lead frame 2 by a die bonding material, and the optical semiconductor element 1 is wire-bonded to the lead frames 2, 3 by bonding wires 4, 4'. On the portion of the substrate 7 that contacts the mounted optical semiconductor element 1 of the encapsulant 6, there is the above-mentioned cured polyfluorene oxide, and the optical semiconductor element 1 is sealed by the encapsulant 6.
製造圖2中所顯示之表面安裝型LED之流程圖係由以下方法來例示,該方法包含以下步驟:(1)藉由轉移模製、壓縮模製或注射模製矽氫化反應可固化聚矽氧組合物形成與引線框架2、3整合之基板7,(2)使用晶粒接合材料將光半導體元件1晶粒接合於引線框架2上,(3)使用接合線4、4'線接合光半導體元件1與引線框架2、3,及(4)使用由可固化聚矽氧組合物構成之密封劑6密封光半導體元件1。 The flow chart for manufacturing the surface mount type LED shown in Fig. 2 is exemplified by the following method, which comprises the following steps: (1) Curable polycondensation by transfer molding, compression molding or injection molding hydrazine hydrogenation reaction The oxygen composition forms the substrate 7 integrated with the lead frames 2, 3, (2) the die bonding of the optical semiconductor element 1 onto the lead frame 2 using a die bonding material, and (3) bonding the light using the bonding wires 4, 4' The semiconductor element 1 and the lead frames 2, 3, and (4) seal the optical semiconductor element 1 using a sealant 6 composed of a curable polysiloxane composition.
另外,在本發明之另一光半導體裝置中,如圖3中所圖解說明,藉由晶粒接合材料將光半導體元件1晶粒接合至引線框架2,且藉由接合線4、4'將此光半導體元件1線接合至引線框架2、3。在此光半導體元件1之周邊周圍,除其上部外,存在由固化聚矽氧構成之壩材料8。藉由密封劑6密封此壩材料8內之光半導體元件1。 Further, in another optical semiconductor device of the present invention, as illustrated in FIG. 3, the optical semiconductor element 1 is die-bonded to the lead frame 2 by a die bonding material, and by bonding wires 4, 4' This optical semiconductor element 1 is wire-bonded to the lead frames 2, 3. Around the periphery of the optical semiconductor element 1, except for the upper portion thereof, there is a dam material 8 composed of solidified polyfluorene oxide. The optical semiconductor element 1 in the dam material 8 is sealed by a sealant 6.
製造圖3中所顯示之表面安裝型LED之流程圖係由以下方法來例示,該方法包含以下步驟:(1)使用晶粒接合材料將光半導體元件1晶粒接合於引線框架2上,(2)使用接合線4、4'線接合光半導體元件1與引線框架2、3,(3)在基板上之光半導體元件1之周邊周圍藉由分配矽氫化反應可固化聚矽氧組合物形成壩材料8,及(4)使用由可固化聚矽氧組合物構成之密封劑6密封光半導體元件1。 The flow chart for manufacturing the surface mount type LED shown in FIG. 3 is exemplified by the following method, which comprises the steps of: (1) bonding the optical semiconductor element 1 to the lead frame 2 using a die bonding material, ( 2) bonding the optical semiconductor element 1 and the lead frames 2, 3 using the bonding wires 4, 4', and (3) forming a curable polyoxyxene composition by distributing a hydrogenation reaction around the periphery of the optical semiconductor element 1 on the substrate The dam material 8, and (4) seals the optical semiconductor element 1 using a sealant 6 composed of a curable polyoxynoxy composition.
另外,在本發明之另一光半導體裝置中,如圖4中所圖解說明,藉由晶粒接合材料將光半導體元件1晶粒接合至引線框架2,且藉由接合線4、4'將此光半導體元件1線接合至引線框架2、3。藉由由固化聚矽氧構成之含螢光物質之板10覆蓋此光半導體元件1,且藉由密封劑6密封此含螢光物質之板10及光半導體元件1。 Further, in another optical semiconductor device of the present invention, as illustrated in FIG. 4, the optical semiconductor element 1 is die-bonded to the lead frame 2 by a die bonding material, and by bonding wires 4, 4' This optical semiconductor element 1 is wire-bonded to the lead frames 2, 3. The optical semiconductor element 1 is covered by a plate 10 containing a fluorescent substance composed of a cured polyfluorene oxide, and the fluorescent material-containing plate 10 and the optical semiconductor element 1 are sealed by a sealant 6.
製造圖4中所顯示之表面安裝型LED之流程圖係由以下方法來例示,該方法包含以下步驟:(1)藉由轉移模製、壓縮模製或注射模製矽氫化反應可固化聚矽氧組合物形成與引線框架2、3整合之框架材料9,(2)使用晶粒接合材料將光半導體元件1晶粒接合於引線框架2上,(3)使用接合線4、4'線接合光半導體元件1與引線框架2、3,(4)使用含螢光物質之板10覆蓋光半導體元件1,及(5)使用由可固化聚矽氧組合物構成之密封劑6填充光半導體元件1及含螢光體之板10。 The flow chart for manufacturing the surface mount type LED shown in Fig. 4 is exemplified by the following method, which comprises the following steps: (1) Curable polycondensation by transfer molding, compression molding or injection molding hydrazine hydrogenation reaction The oxygen composition forms the frame material 9 integrated with the lead frames 2, 3, (2) the die bonding of the optical semiconductor element 1 onto the lead frame 2 using a die bonding material, and (3) bonding using bonding wires 4, 4' The optical semiconductor element 1 and the lead frames 2, 3, (4) cover the optical semiconductor element 1 using the plate 10 containing the fluorescent substance, and (5) the optical semiconductor element is filled with the sealant 6 composed of the curable polyoxygen oxide composition. 1 and a plate 10 containing a phosphor.
並不具體限制密封劑6之固化溫度,但通常能夠自室溫至220℃獲得良好固化。60℃至180℃之溫度下之固化較佳,且80℃至150℃之溫度下之固化更佳,此乃因其在聚矽氧層與基板之間產生強黏著。另外,分步固化較佳,其中在室溫至100℃、較佳60℃至80℃下加熱複合物,且然後在80℃至180℃、較佳100℃至150℃下加熱,此乃因在一些情形下進一步改良聚矽氧層與基板之間之黏著。 The curing temperature of the sealant 6 is not particularly limited, but usually it is possible to obtain good curing from room temperature to 220 °C. Curing at a temperature of from 60 ° C to 180 ° C is preferred, and curing at a temperature of from 80 ° C to 150 ° C is preferred because of the strong adhesion between the polysilicon layer and the substrate. Further, stepwise curing is preferred, wherein the composite is heated at room temperature to 100 ° C, preferably 60 ° C to 80 ° C, and then heated at 80 ° C to 180 ° C, preferably 100 ° C to 150 ° C. In some cases, the adhesion between the polysilicon layer and the substrate is further improved.
現將使用實例詳細闡述本發明之製造光半導體裝置之方法及光半導體裝置。另外,藉由以下方法來評估可固化聚矽氧組合物之固化性及儲存穩定性及其固化聚矽氧之耐熱性。 A method of manufacturing an optical semiconductor device and an optical semiconductor device of the present invention will now be described in detail using examples. Further, the curability and storage stability of the curable polydecene oxide composition and the heat resistance of the cured polyfluorene oxide were evaluated by the following methods.
在150℃下使用轉移模製機藉由模製與引線框架2、3整合之矽氫化反應可固化聚矽氧組合物來製造圖1中所圖解說明之光反射材料5(固化聚矽氧)。在130℃下將光反射材料後固化3小時後,藉由分配所規定之可固化聚矽氧組合物來填充以形成密封劑6。使用填充有可固化聚矽氧組合物之光反射材料,在150℃下開始可固化聚矽氧組合物之固化。在開始固化後5分鐘、10分鐘、30分鐘、60分鐘及120分鐘時檢查固化密封劑6之表面黏性,且將直至無黏性之時間作為固化時間。 The light-reflecting material 5 (cured polyoxymethylene) illustrated in Fig. 1 was produced by a transfer molding machine at 150 ° C by a hydrogenation reaction-curable polyoxyxene composition which was integrated with the lead frames 2, 3 by molding. . After the post-curing of the light-reflecting material at 130 ° C for 3 hours, it was filled by dispensing the specified curable poly-xyloxy composition to form the sealant 6. Curing of the curable polyoxynene composition was initiated at 150 °C using a light reflective material filled with a curable polydecene oxide composition. The surface tack of the cured sealant 6 was examined at 5 minutes, 10 minutes, 30 minutes, 60 minutes, and 120 minutes after the start of curing, and the time until the tack-free property was taken as the curing time.
使用流變計(AR550,由TA Instruments公司製造)使用20(1/sec)之剪切速率在製備後立即量測可固化聚矽氧組合物之黏度。組合物經製備且然後在25℃下靜置24小時後,藉由相同方法量測黏度且與初始黏度進行比較。 The viscosity of the curable polyanthracene composition was measured immediately after preparation using a rheometer (AR550, manufactured by TA Instruments) using a shear rate of 20 (1/sec). After the composition was prepared and then allowed to stand at 25 ° C for 24 hours, the viscosity was measured by the same method and compared with the initial viscosity.
將所製造光半導體裝置於300℃爐中放置20分鐘,且視覺檢查密封劑之褪色程度。 The manufactured optical semiconductor device was placed in a 300 ° C oven for 20 minutes, and the degree of fading of the sealant was visually inspected.
現將使用實踐實例及比較實例中之每一者特定闡述固化聚矽氧及密封劑。應注意在該等式中,Me、Ph、Vi及Ep分別代表甲基、苯基、乙烯基及3-縮水甘油氧基丙基。 Curing polyfluorene oxide and encapsulant will now be specifically described using each of the practical examples and comparative examples. It should be noted that in the equation, Me, Ph, Vi and Ep represent a methyl group, a phenyl group, a vinyl group and a 3-glycidoxypropyl group, respectively.
均勻摻和100.0質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;8.0質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;20.0質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;35.0質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 Uniformly blended with 100.0 parts by mass of methylvinylphenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 8.0 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the formula: (MeViSiO) 4 ; 20.0 parts by mass The following average formula represents a dimethylvinyl methoxy-terminated methylphenyl polyoxyalkylene: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 35.0 parts by mass of 1,1,5 represented by the following formula: 5-tetramethyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲 基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.76mol。);7.5質量份數之由以下平均單元式表示之含矽鍵結氫原子之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 1 mol of the total vinyl group of 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene is 0.76 mol.); 7.5 parts by mass of the following average unit Methylphenyl polyoxane containing a hydrazine-bonded hydrogen atom: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.18mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量應使以本發明組合物中鉑金屬之質量計為5ppm);1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm);110質量份數之具有0.2μm平均初始粒徑之氧化鈦(SX-3103,由Sakai Chemical Industry有限公司製造);100質量份數之具有5μm平均粒徑之壓碎石英粉(SILICIC SAB-500,由Yamamori Tsuchimoto Mining有限公司製造);及180質量份數之具有15μm平均粒徑之球狀二氧化矽(HS-202,由Nippon Steel & Sumikin Materials有限公司製造),以製備可固化聚矽氧組合物1。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene have 1 mol of total vinyl group of 0.18 mol); platinum 1,3-divinyl- 1,1,3,3-tetramethyldioxane complex 1,3-divinyl-1,1,3,3-tetramethyldioxane solution (the amount should be The mass of the platinum metal in the composition of the invention is 5 ppm); 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the present invention); 110 parts by mass has an average initial of 0.2 μm Titanium oxide of particle size (SX-3103, manufactured by Sakai Chemical Industry Co., Ltd.); 100 parts by mass of crushed quartz powder having an average particle diameter of 5 μm (SILICIC SAB-500, manufactured by Yamamori Tsuchimoto Mining Co., Ltd.); And 180 parts by mass of spherical ceria (HS-202, manufactured by Nippon Steel & Sumikin Materials Co., Ltd.) having an average particle diameter of 15 μm to prepare a curable polydecane oxide composition 1.
均勻摻和100.0質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;8.0質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;20.0質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷: ViMe2SiO(MePhSiO)17.5SiViMe2;35.0質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 Uniformly blended with 100.0 parts by mass of methylvinylphenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 8.0 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the formula: (MeViSiO) 4 ; 20.0 parts by mass The following average formula shows a dimethylvinyl methoxy-terminated methylphenyl polyoxyalkylene: ViMe 2 SiO(MePhSiO) 17.5 SiViMe 2 ; 35.0 parts by mass of 1,1,5 represented by the following formula: 5-tetramethyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.76mol);7.5質量份數之由以下平均單元式表示之含矽鍵結氫原子之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene have a total vinyl group of 0.76 mol); 7.5 parts by mass of the following average unit Methylphenyl polyoxane represented by a hydrazine-bonded hydrogen atom: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.18mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本發明組合物中鉑金屬之質量計為10ppm);1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm);110質量份數之具有0.2μm平均初始粒徑之氧化鈦(SX-3103,由Sakai Chemical Industry有限公司製造);100質量份數之具有5μm平均粒徑之壓碎石英粉(SILICIC SAB-500,由Yamamori Tsuchimoto Mining有限公司製造);及180質量份數之具有15μm平均粒徑之球狀二氧化矽(HS-202,由Nippon Steel & Sumikin Materials有限公司製造),以製備可固化聚矽氧組合物2。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene have 1 mol of total vinyl group of 0.18 mol); platinum 1,3-divinyl- a solution of 1,1,3,3-tetramethyldioxane complex 1,3-divinyl-1,1,3,3-tetramethyldioxane in an amount such that The mass of the platinum metal in the composition is 10 ppm); 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the present invention); 110 parts by mass of the average initial particle having 0.2 μm Titanium oxide (SX-3103, manufactured by Sakai Chemical Industry Co., Ltd.); 100 parts by mass of crushed quartz powder having an average particle diameter of 5 μm (SILICIC SAB-500, manufactured by Yamamori Tsuchimoto Mining Co., Ltd.); 180 parts by mass of spherical ceria (HS-202, manufactured by Nippon Steel & Sumikin Materials Co., Ltd.) having an average particle diameter of 15 μm to prepare a curable polydecene composition 2.
均勻摻和100.0質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80HO1/2)0.02; 8.0質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;20.0質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;35.0質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 Uniformly blended with 100.0 parts by mass of methylvinylphenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 HO 1/2 ) 0.02 ; 8.0 The mass fraction is 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the following formula: (MeViSiO) 4 ; 20.0 parts by mass of the following The dimethylvinyl methoxy-terminated methylphenyl polyoxy siloxane of the average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 35.0 parts by mass of 1,1,5,5 represented by the following formula -tetramethyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.76mol);7.5質量份數之由以下平均單元式表示之含矽鍵結氫原子之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene have a total vinyl group of 0.76 mol); 7.5 parts by mass of the following average unit Methylphenyl polyoxane represented by a hydrazine-bonded hydrogen atom: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.18mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本發明組合物中之鉑金屬之質量計為10ppm);及1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm),以製備可固化聚矽氧組合物3。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane and dimethylvinyloxyl-terminated methylphenyl polyoxyalkylene have 1 mol of total vinyl group of 0.18 mol); platinum 1,3-divinyl- a solution of 1,1,3,3-tetramethyldioxane complex 1,3-divinyl-1,1,3,3-tetramethyldioxane in an amount such that The mass of the platinum metal in the composition is 10 ppm); and 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the present invention) to prepare a curable polydecene oxide composition 3.
均勻摻和48.4質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(MeViSiO2/2)0.25(Ph2SiO2/2)0.30(PhSiO3/2)0.45(HO1/2)0.02; 51.6質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.01;12.9質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;29.0質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 Uniformly blended 48.4 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (MeViSiO 2/2 ) 0.25 (Ph 2 SiO 2/2 ) 0.30 (PhSiO 3/2 ) 0.45 ( HO 1/2 ) 0.02 ; 51.6 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/ 2 ) 0.01 ; 12.9 parts by mass of dimethylvinyl methoxy-terminated methylphenyl polyoxyalkylene represented by the following average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 29.0 parts by mass 1,1,5,5-tetramethyl-3,3-diphenyltrioxane represented by the formula: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.94mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本發明組合物中鉑金屬之質量計為5ppm);1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm);118質量份數之具有0.2μm平均初始粒徑之氧化鈦(SX-3103,由Sakai Chemical Industry有限公司製造);及213質量份數之具有15μm平均粒徑之球狀二氧化矽(HS-202,由Nippon Steel & Sumikin Materials有限公司製造),以製備可固化聚矽氧組合物4。 (Amount such that the hydrazine-bonded hydrogen atom in this component is relative to the methylvinyl phenyl polyoxy siloxane described above and the dimethylvinyl hydroxy terminated methyl phenyl polyoxy siloxane 1 mol of total vinyl is 0.94 mol); platinum 1,3-divinyl-1,1,3,3-tetramethyldioxane complex 1,3-divinyl-1, a solution of 1,3,3-tetramethyldioxane in an amount such that it is 5 ppm by mass of the platinum metal in the composition of the present invention; 1-ethynyl-1-cyclohexanol (the amount thereof is such that The mass in the composition was 250 ppm); 118 parts by mass of titanium oxide (SX-3103, manufactured by Sakai Chemical Industry Co., Ltd.) having an average primary particle diameter of 0.2 μm; and 213 parts by mass of an average particle diameter of 15 μm. Spherical cerium oxide (HS-202, manufactured by Nippon Steel & Sumikin Materials Co., Ltd.) was used to prepare a curable polydecane oxidizing composition 4.
均勻摻和48.4質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(MeViSiO2/2)0.25(Ph2SiO2/2)0.30(PhSiO3/2)0.45(HO1/2)0.02;51.6質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.01; 12.9質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;29.0質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 Uniformly blended 48.4 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (MeViSiO 2/2 ) 0.25 (Ph 2 SiO 2/2 ) 0.30 (PhSiO 3/2 ) 0.45 ( HO 1/2 ) 0.02 ; 51.6 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/ 2 ) 0.01 ; 12.9 parts by mass of dimethylvinyl methoxy-terminated methylphenyl polyoxyalkylene represented by the following average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 29.0 parts by mass 1,1,5,5-tetramethyl-3,3-diphenyltrioxane represented by the formula: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽原子鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷及二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷中之1mol總乙烯基為0.94mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本發明組合物中之鉑金屬之質量計為10ppm);1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm);118質量份數之具有0.2μm平均初始粒徑之氧化鈦(SX-3103,由Sakai Chemical Industry有限公司製造);及213質量份數之具有15μm平均粒徑之球狀二氧化矽(HS-202,由Nippon Steel & Sumikin Materials有限公司製造),以製備可固化聚矽氧組合物5。 (The amount is such that the ruthenium atom in the component is bonded to the hydrogen atom relative to the methylvinyl phenyl polyoxy siloxane mentioned above and the dimethylvinyl hydroxy terminated methyl phenyl polyoxyl 1 mol of total vinyl in the alkane is 0.94 mol); 1,3-divinyl-1 of platinum 1,3-divinyl-1,1,3,3-tetramethyldioxane complex a 1,3,3-tetramethyldioxane solution (in an amount such that 10 ppm by mass of the platinum metal in the composition of the present invention); 1-ethynyl-1-cyclohexanol (the amount thereof The mass in the composition of the present invention is 250 ppm); 118 parts by mass of titanium oxide having an average primary particle diameter of 0.2 μm (SX-3103, manufactured by Sakai Chemical Industry Co., Ltd.); and 213 parts by mass having an average of 15 μm Spherical cerium oxide (HS-202, manufactured by Nippon Steel & Sumikin Materials Co., Ltd.) having a particle size to prepare a curable polyoxyn composition 5.
均勻摻和100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;0.35質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;30.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2; 4.17質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;34.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 0.35 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the following formula: (MeViSiO) 4 ; 30.4 parts by mass The following average formula represents a dimethylvinyl methoxy-terminated methylphenyl polyoxyalkylene: ViMe 2 SiO(MePhSiO) 17.5 SiViMe 2 ; 4.17 parts by mass of an epoxy group represented by the following average unit formula Polyoxane: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 34.7 parts by mass of 1,1,5,5- represented by the following formula Tetramethyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為1.03mol);及4.17質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 1.03 mol); And 4.17 parts by mass of methyl phenyl polyoxy siloxane containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.14mol),以獲得黏度為2,400mPa.s之可固化聚矽氧組合物6。在25℃下將可固化聚矽氧組合物6靜置24小時後,其黏度為2,400mPa.s。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.14 mol), To obtain a viscosity of 2,400 mPa. The curable polyanthracene composition 6 of s. After the curable polyoxynoxy composition 6 was allowed to stand at 25 ° C for 24 hours, its viscosity was 2,400 mPa. s.
均勻摻和100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;1.59質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;21.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷: ViMe2SiO(MePhSiO)17.5SiViMe2;3.94質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;28.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 1.59 parts by mass of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the formula: (MeViSiO) 4 ; 21.4 parts by mass The dimethylvinyl methoxy-terminated methylphenyl polyoxane represented by the following average formula: ViMe 2 SiO(MePhSiO) 17.5 SiViMe 2 ; 3.94 parts by mass of the epoxy group represented by the following average unit formula Polyoxyalkylene: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 28.7 parts by mass of 1,1,5,5- represented by the following formula Tetramethyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.82mol);及3.44質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.82 mol); And 3.44 parts by mass of methyl phenyl polyoxy siloxane containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.11mol),以獲得黏度為4,600mPa.s之可固化聚矽氧組合物7。在25℃下將可固化聚矽氧組合物7靜置24小時後,其黏度為4,600mPa.s。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.11 mol), To obtain a viscosity of 4,600 mPa. The curable polyoxynoxy composition 7 of s. After the curable polyoxynoxy composition 7 was allowed to stand at 25 ° C for 24 hours, the viscosity was 4,600 mPa. s.
均勻混合100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;0.35質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;30.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲 基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;4.17質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;34.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 0.35 The mass fraction is 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane: (MeViSiO) 4 ; 30.4 parts by mass of the following The dimethyl vinyl methoxy-terminated methylphenyl polyoxy siloxane of the average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 4.17 parts by mass of the epoxy group-containing olefinic group represented by the following average unit formula Polyoxane: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 34.7 parts by mass of 1,1,5,5-four represented by the following formula Methyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為1.03mol);4.17質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 1.03 mol); 4.17 parts by mass of methyl phenyl polyoxy siloxane containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.14mol);及1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm),以獲得黏度為2,400mPa.s之可固化聚矽氧組合物8。在25℃下將可固化聚矽氧組合物8靜置24小時後,其黏度為2,400mPa.s。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.14 mol); And 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the invention) to obtain a viscosity of 2,400 mPa. The curable polydecaneoxy composition 8 of s. After the curable polyoxynoxy composition 8 was allowed to stand at 25 ° C for 24 hours, its viscosity was 2,400 mPa. s.
均勻混合100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;1.59質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷: (MeViSiO)4;21.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;3.94質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;28.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 1.59 The mass fraction is 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane represented by the following formula: (MeViSiO) 4 ; 21.4 parts by mass of the following The dimethyl vinyl methoxy-terminated methyl phenyl polyoxy siloxane of the average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 3.94 parts by mass of the epoxy group-containing group represented by the following average unit formula Polyoxane: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 28.7 parts by mass of 1,1,5,5-four represented by the following formula Methyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.82mol);3.44質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.82 mol); 3.44 parts by mass of methyl phenyl polyoxyalkylene containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽原子鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.11mol);及1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm),以獲得黏度為4,600mPa.s之可固化聚矽氧組合物9。在25℃下將可固化聚矽氧組合物9靜置24小時後,其黏度為4,600mPa.s。 (The amount is such that the halogen atom in this component is bonded to the hydrogen atom relative to the above-mentioned methyl vinyl phenyl polyoxyalkylene, 1,3,5,7-tetramethyl-1,3,5 , 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.11 mol) And 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the invention) to obtain a viscosity of 4,600 mPa. The curable polydecaneoxy composition 9 of s. After the curable polyoxynoxy composition 9 was allowed to stand at 25 ° C for 24 hours, the viscosity was 4,600 mPa. s.
均勻混合100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02; 0.35質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;30.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;4.17質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;34.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 0.35 The mass fraction is 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane: (MeViSiO) 4 ; 30.4 parts by mass of the following The dimethyl vinyl methoxy-terminated methylphenyl polyoxy siloxane of the average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 4.17 parts by mass of the epoxy group-containing olefinic group represented by the following average unit formula Polyoxane: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 34.7 parts by mass of 1,1,5,5-four represented by the following formula Methyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為1.03mol);4.17質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 1.03 mol); 4.17 parts by mass of methyl phenyl polyoxy siloxane containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.14mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本發明組合物中鉑金屬之質量計為5ppm);及1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm),以獲得黏度為2,400mPa.s之可固化聚矽氧組合物10。在25℃下將可固化聚矽氧組合物10靜置24小時後,其黏度為5,800mPa.s。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.14 mol); 1,3-divinyl-1,1,3,3-tetramethyldifluoride of platinum 1,3-divinyl-1,1,3,3-tetramethyldioxane complex An oxane solution (in an amount such that 5 ppm by mass of the platinum metal in the composition of the present invention); and 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the present invention), To obtain a viscosity of 2,400 mPa. The curable polydecene oxide composition 10 of s. After the curable polyoxynoxy composition 10 was allowed to stand at 25 ° C for 24 hours, the viscosity was 5,800 mPa. s.
均勻混合100質量份數之由以下平均單元式表示之甲基乙烯基苯基聚矽氧烷:(Me2ViSiO1/2)0.20(PhSiO3/2)0.80(HO1/2)0.02;1.59質量份數之由下式表示之1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷:(MeViSiO)4;21.4質量份數之由以下平均式表示之二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷:ViMe2SiO(MePhSiO)17.5SiViMe2;3.94質量份數之由以下平均單元式表示之含環氧基之聚矽氧烷:(Me2ViSiO1/2)0.2(Ph2SiO2/2)0.4(EpSiO3/2)0.4;28.7質量份數之由下式表示之1,1,5,5-四甲基-3,3-二苯基三矽氧烷:(HMe2SiO)2SiPh2 100 parts by mass of methyl vinyl phenyl polyoxyalkylene represented by the following average unit formula: (Me 2 ViSiO 1/2 ) 0.20 (PhSiO 3/2 ) 0.80 (HO 1/2 ) 0.02 ; 1.59 The mass fraction is 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraoxane: (MeViSiO) 4 ; 21.4 parts by mass of the following The dimethyl vinyl methoxy-terminated methyl phenyl polyoxy siloxane of the average formula: ViMe 2 SiO (MePhSiO) 17.5 SiViMe 2 ; 3.94 parts by mass of the epoxy group-containing group represented by the following average unit formula Polyoxane: (Me 2 ViSiO 1/2 ) 0.2 (Ph 2 SiO 2/2 ) 0.4 (EpSiO 3/2 ) 0.4 ; 28.7 parts by mass of 1,1,5,5-four represented by the following formula Methyl-3,3-diphenyltrioxane: (HMe 2 SiO) 2 SiPh 2
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.82mol);3.44質量份數之由以下平均單元式表示之含矽鍵結氫之甲基苯基聚矽氧烷:(Me2HSiO1/2)0.6(PhSiO3/2)0.4 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.82 mol); 3.44 parts by mass of methyl phenyl polyoxyalkylene containing hydrazine-bonded hydrogen represented by the following average unit formula: (Me 2 HSiO 1/2 ) 0.6 (PhSiO 3/2 ) 0.4
(其量使得此組份中之矽鍵結氫原子相對於上文所提及甲基乙烯基苯基聚矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、二甲基乙烯基矽氧基封端甲基苯基聚矽氧烷及含環氧基之聚矽氧烷中之1mol總乙烯基為0.11mol);鉑之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物之1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液(其量使得以本 發明組合物中鉑金屬之質量計為5ppm);及1-乙炔基-1-環己醇(其量使得以本發明組合物中之質量計為250ppm),以獲得黏度為4,600mPa.s之可固化聚矽氧組合物11。在25℃下將可固化聚矽氧組合物11靜置24小時後,其黏度為10,600mPa.s。 (amount such that the hydrazine-bonded hydrogen atom in this component is relative to the above-mentioned methylvinylphenyl polysiloxane, 1,3,5,7-tetramethyl-1,3,5, 7-tetravinylcyclotetraoxane, dimethylvinyloxy-terminated methylphenyl polyoxyalkylene, and 1 mole of total vinyl group in the epoxy group-containing polyoxyalkylene are 0.11 mol); 1,3-divinyl-1,1,3,3-tetramethyldifluoride of platinum 1,3-divinyl-1,1,3,3-tetramethyldioxane complex Oxytomane solution The mass of the platinum metal in the composition of the invention is 5 ppm); and 1-ethynyl-1-cyclohexanol (in an amount such that it is 250 ppm by mass in the composition of the present invention) to obtain a viscosity of 4,600 mPa. The curable polydecene oxide composition 11 of s. After the curable polyoxyl composition 11 was allowed to stand at 25 ° C for 24 hours, the viscosity was 10,600 mPa. s.
在150℃下,將製造實例1中製備之可固化聚矽氧組合物1與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例6中製備之可固化聚矽氧組合物6填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 1 prepared in Production Example 1 was molded and molded with a lead frame at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light-reflecting material. This material was filled by dispensing the curable polyelectrolytic composition 6 prepared in Production Example 6, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例1中製備之可固化聚矽氧組合物1與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例7中製備之可固化聚矽氧組合物7填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 1 prepared in Production Example 1 was molded and molded with a lead frame at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light-reflecting material. This material was filled by dispensing the curable polysiloxane composition 7 prepared in Production Example 7, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例2中製備之可固化聚矽氧組合物2與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例6中製備之可固化聚矽氧組合物6填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘 之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 2 prepared in Production Example 2 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyelectrolytic composition 6 prepared in Production Example 6, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace and carried out for 20 minutes. Heat resistance test. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例2中製備之可固化聚矽氧組合物2與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例7中製備之可固化聚矽氧組合物7填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 2 prepared in Production Example 2 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polysiloxane composition 7 prepared in Production Example 7, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例3中製備之可固化聚矽氧組合物3與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例6中製備之可固化聚矽氧組合物6填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 3 prepared in Production Example 3 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyelectrolytic composition 6 prepared in Production Example 6, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例4中製備之可固化聚矽氧組合物4與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例6中製備之可固化聚矽氧組合物6填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyanthracene composition 4 prepared in Production Example 4 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyelectrolytic composition 6 prepared in Production Example 6, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例4中製備之可固化聚矽氧組合物4與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例7中製備之可固化聚矽氧組合物7填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyanthracene composition 4 prepared in Production Example 4 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polysiloxane composition 7 prepared in Production Example 7, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例5中製備之可固化聚矽氧組合物5與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例6中製備之可固化聚矽氧組合物6填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyfluorene oxide composition 5 prepared in Production Example 5 was molded and laminated with a lead frame at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyelectrolytic composition 6 prepared in Production Example 6, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例5中製備之可固化聚矽氧組合物5與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例7中製備之可固化聚矽氧組合物7填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyfluorene oxide composition 5 prepared in Production Example 5 was molded and laminated with a lead frame at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polysiloxane composition 7 prepared in Production Example 7, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例1中製備之可固化聚矽氧組合物1與引線 框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例8中製備之可固化聚矽氧組合物8填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyfluorene oxide composition 1 prepared in Example 1 and the lead were fabricated at 150 °C. The frame molding was integrated for 2 minutes and then post-cured in a 150 ° C oven for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyoxyl composition 8 prepared in Production Example 8, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tack. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例2中製備之可固化聚矽氧組合物2與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例9中製備之可固化聚矽氧組合物9填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyxanylene composition 2 prepared in Production Example 2 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polydecane oxide composition 9 prepared in Production Example 9, and then cured in a furnace at 150 ° C for a predetermined time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例4中製備之可固化聚矽氧組合物4與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例10中製備之可固化聚矽氧組合物10填充此材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyanthracene composition 4 prepared in Production Example 4 was molded with the lead frame molding at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This material was filled by dispensing the curable polyelectrolytic composition 10 prepared in Production Example 10, and then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated in terms of surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
在150℃下,將製造實例5中製備之可固化聚矽氧組合物5與引線框架模製整合2分鐘,且然後在150℃爐中後固化1小時,以獲得光反射材料。藉由分配製造實例11中製備之可固化聚矽氧組合物11填充此 材料,且然後在150℃爐中實施規定時間之固化,並根據表面黏性來評價固化性。將所獲得之光半導體裝置置於300℃爐中,且實施20分鐘之耐熱性測試。視覺檢查密封劑之褪色程度。評估結果顯示於表1中。 The curable polyfluorene oxide composition 5 prepared in Production Example 5 was molded and laminated with a lead frame at 150 ° C for 2 minutes, and then post-cured in an oven at 150 ° C for 1 hour to obtain a light reflective material. This was filled by dispensing the curable polyoxyl composition 11 prepared in Production Example 11. The material was then cured in a furnace at 150 ° C for a predetermined period of time, and the curability was evaluated based on the surface tackiness. The obtained optical semiconductor device was placed in a 300 ° C furnace, and a heat resistance test was performed for 20 minutes. Visually check the degree of fading of the sealant. The evaluation results are shown in Table 1.
自表1中所顯示之結果可見,實踐實例1至11在密封劑褪色方面展現優於比較實例1及2之彼等之結果。因此,在關於藉由本發明方法製造之實踐實例之光半導體裝置中,可抑制在高溫下之由矽氫化反應觸媒引起之褪色,且亦由於可固化聚矽氧組合物固化反應本身可有效地藉由接觸密封劑之固化聚矽氧中之矽氫化反應觸媒來實施,故可形成確保期望耐熱性及儲存穩定性之密封劑。 As can be seen from the results shown in Table 1, Practical Examples 1 to 11 exhibited results superior to those of Comparative Examples 1 and 2 in the fading of the sealant. Therefore, in the optical semiconductor device relating to the practical example manufactured by the method of the present invention, fading caused by the hydrogenation reaction catalyst at a high temperature can be suppressed, and also since the curing reaction of the curable polysiloxane composition itself can be effectively By carrying out the hydrogenation reaction catalyst in the solidified polyoxo oxygen which is contacted with the sealant, a sealant which ensures desired heat resistance and storage stability can be formed.
根據本發明,可提供密封劑實現儲存穩定性、具有良好耐熱性並可極大地抵抗褪色之光半導體裝置之製造方法;且可提供藉由該製造方法獲得之光半導體裝置。 According to the present invention, a method of manufacturing an optical semiconductor device in which a sealant achieves storage stability, has good heat resistance, and can greatly resist fading can be provided; and an optical semiconductor device obtained by the manufacturing method can be provided.
1‧‧‧光半導體元件 1‧‧‧Optical semiconductor components
2‧‧‧引線框架 2‧‧‧ lead frame
3‧‧‧引線框架 3‧‧‧ lead frame
4‧‧‧接合線 4‧‧‧bonding line
4'‧‧‧接合線 4'‧‧‧bonding line
5‧‧‧光反射材料/固化聚矽氧 5‧‧‧Light Reflective Material / Curing Polyoxygen
6‧‧‧密封劑 6‧‧‧Sealant
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