TW201525064A - Photosensitive resin composition, photosensitive resin, and organic light emitting diode display device - Google Patents

Abstract

A photosensitive resin composition includes a polybenzoxazole precursor and a photoactive compound. The photosensitive resin composition can be employed to form a photosensitive resin which can be applied to an organic light emitting diode display device. Light leakages occurred between pixels can be reduced so as to enhance a contrary ratio of the organic light emitting diode display device. Accordingly, the image quality of the organic light emitting diode display device is enhanced.

Description

Photosensitive resin composition, photosensitive resin, and organic light emitting diode display element

The present invention relates to a photosensitive resin composition and a photosensitive resin and an organic light emitting diode display device produced therefrom.

Organic Light Emitting Diode (OLED) display element, also known as Organic Electroluminescence (OEL) display element, has self-luminous, wide viewing angle, good resolution, fast response, low operating voltage, High brightness, flexibility, no image sticking, etc. In addition, because it does not require backlight and liquid crystal interlayer, it has the advantages of lightness, portability and the like, and has become a new trend of flat panel displays.

However, as the pixels of OLED display elements become more and more refined, the spacing between different pixels is getting smaller and smaller, which is easy to cause light leakage between pixels, reducing the contrast of OLED display elements, and thus affecting the imaging quality of OLED display elements.

An object of the present invention is to provide a photosensitive resin composition, and a photosensitive resin made of the photosensitive resin composition is applied to an OLED display element, thereby avoiding light leakage between pixels, thereby improving the contrast of the OLED display element. Thereby improving the imaging quality of the OLED display element. Further, the photosensitive resin produced by the photosensitive resin composition of the present invention can withstand high temperatures, and can withstand high temperatures of up to 300 ° C or more in the evaporation process of the OLED display element.

According to one embodiment of the present invention, there is provided a photosensitive resin composition comprising a polybenzoxazole precursor and at least one photosensitive compound.

The polybenzoxazole precursor has a structure as shown in formula (I): In the formula (I), each of the X and E groups is independently a divalent group, and n is an integer of from 5 to 60.

The photosensitive compound has a structure represented by formula (II), formula (III), formula (IV), formula (V), formula (VI) or formula (VII): In the formulae (II) to (VII), R ¹ to R ²⁰ are each independently a hydrogen group, a group represented by the formula (i) or the formula (ii), and at least one of R ¹ to R ⁴ is a formula (i). Or a group represented by the formula (ii), at least one of R ⁵ to R ⁷ is a group represented by the formula (i) or the formula (ii), and at least one of R ⁸ to R ¹⁰ is a formula (i) Or a group represented by the formula (ii), at least one of R ¹¹ to R ¹³ is a group represented by the formula (i) or the formula (ii), and at least one of R ¹⁴ to R ¹⁶ is a formula (i) Or a group represented by the formula (ii), at least one of R ¹⁷ to R ²⁰ is a group represented by the formula (i) or the formula (ii).

Equations (i) and (ii) are as follows: (i), (ii).

According to the aforementioned photosensitive resin composition, X may be -C(CF ₃ ) ₂ -, -C(CH ₃ ) ₂ -, -O- or -S-.

According to the aforementioned photosensitive resin composition, E may be -(CH ₂ )m-, , , Wherein R ²¹ to R ²⁴ are each independently an alkyl group having 1 to 3 carbon atoms, an aromatic group having 3 to 7 carbon atoms or a cycloalkyl group, m is an integer of 0 to 10, and r is an integer of 1 to 10.

According to the foregoing photosensitive resin composition, the weight ratio of the photosensitive compound to the polybenzoxazole precursor is MR1, which satisfies the following condition: 0.15 MR1 1. Preferably, it satisfies the following conditions: 0.2 MR1 0.51.

The development accelerator may be further included in accordance with the aforementioned photosensitive resin composition. The weight ratio of the development accelerator to the photosensitive compound is MR2, which satisfies the following conditions: MR2 0.9. Preferably, it satisfies the following conditions: 0 MR2 0.7. More preferably, it satisfies the following conditions: 0 MR2 0.4.

According to another embodiment of the present invention, there is provided a photosensitive resin formed by the above-mentioned photosensitive resin composition subjected to a heating step, wherein a polybenzoxazole precursor is cyclized by a heating step to form polyphenylene. Oxazole.

According to the aforementioned photosensitive resin, the heating step can be carried out at 150 ° C to 350 ° C for 1 hour to 5 hours.

According to the foregoing photosensitive resin, the photosensitive resin has a light transmittance of less than 11% for a wavelength of less than or equal to 400 nm.

Still another embodiment in accordance with an aspect of the present invention is to provide an OLED display element comprising a substrate, a thin film transistor, and the aforementioned photosensitive resin. The thin film transistor is disposed above the substrate, and the photosensitive resin is disposed above the thin film transistor.

According to the foregoing OLED display device, wherein the thin film transistor can be an amorphous silicon oxide (Amorphous Si TFT), a low temperature polycrystalline silicon (Low Temperature Poly-Si TFT) or an indium gallium zinc oxide thin film transistor (Indium Gallium Zinc Oxide) TFT).

100‧‧‧Substrate

200‧‧‧film transistor

210‧‧‧ gate

220‧‧‧ gate insulation

230‧‧‧Reaction layer

240‧‧‧etch barrier

250‧‧‧汲polar

260‧‧‧ source

300‧‧ ‧ protective layer

400‧‧‧ pixel definition layer

500‧‧‧Anode

600‧‧‧Organic light-emitting layer

700‧‧‧ cathode

800‧‧‧ arrow

900‧‧‧ arrow

M‧‧‧ pixel boundary

1 is a partial cross-sectional view showing an OLED display element in accordance with an embodiment of the present invention.

FIG. 2 is another partial cross-sectional view showing the OLED display element of FIG. 1.

Fig. 3 is a graph showing the relationship between light transmittance and wavelength in Examples 1 to 4 and Comparative Examples 1' and 2' according to the present invention.

Photosensitive resin composition

The photosensitive resin composition contains a polybenzoxazole precursor and at least one photosensitive compound. Further, the photosensitive resin composition may further contain a solvent, and optionally further contains a catalyst and/or an additive.

The polybenzoxazole precursor may have a structure as shown in formula (I): In the formula (I), each of the X and E groups is independently a divalent group, and n is an integer of from 5 to 60.

When n is less than 5, when a photosensitive resin formed of a photosensitive resin composition is used as a photoresist, a developer such as tetramethylammonium hydroxide (TMAH) cannot be blocked, and peeling of photosensitive resin occurs when developing is easy. The phenomenon. When n is more than 60, the photosensitive resin composition is not easily dissolved in a solvent and is not favorable for coating. Further, when a photosensitive resin formed of a photosensitive resin composition is used as a photoresist, the exposed region thereof is not easily removed at the time of development.

According to the aforementioned photosensitive resin composition, X may be -C(CF ₃ ) ₂ -, -C(CH ₃ ) ₂ -, -O- or -S-.

According to the aforementioned photosensitive resin composition, E may be -(CH ₂ )m-, , , Wherein R ²¹ to R ²⁴ are each independently an alkyl group having 1 to 3 carbon atoms, an aromatic group having 3 to 7 carbon atoms or a cycloalkyl group, m is an integer of 0 to 10, and r is an integer of 1 to 10.

For example, the polybenzoxazole precursor can be, but is not limited to, the structures of formula (I-1), formula (I-2), and formula (I-3):

The photosensitive compound has a structure represented by formula (II), formula (III), formula (IV), formula (V), formula (VI) or formula (VII): In the formulae (II) to (VII), R ¹ to R ²⁰ are each independently a hydrogen group, a group represented by the formula (i) or the formula (ii), and at least one of R ¹ to R ⁴ is a formula (i). Or a group represented by the formula (ii), at least one of R ⁵ to R ⁷ is a group represented by the formula (i) or the formula (ii), and at least one of R ⁸ to R ¹⁰ is a formula (i) Or a group represented by the formula (ii), at least one of R ¹¹ to R ¹³ is a group represented by the formula (i) or the formula (ii), and at least one of R ¹⁴ to R ¹⁶ is a formula (i) Or a group represented by the formula (ii), at least one of R ¹⁷ to R ²⁰ is a group represented by the formula (i) or the formula (ii).

Equations (i) and (ii) are as follows:

For example, the photosensitive compound may be, but not limited to, the formula (II-1), the formula (III-1), the formula (III-2), the formula (III-3), the formula (IV-1), and the formula (V-). 1), the structure shown in formula (VI-1) or formula (VII-1), as shown in Table 1 below:

According to the foregoing photosensitive resin composition, the weight ratio of the photosensitive compound to the polybenzoxazole precursor is MR1, which satisfies the following condition: 0.15 MR1 1. Preferably, it satisfies the following conditions: 0.2 MR1 0.51. When MR1 is less than 0.15, the photosensitive resin prepared by the photosensitive resin composition cannot effectively block light penetration of a wavelength of less than or equal to 400 nm.

The photosensitive resin composition may further comprise a solvent, and the solvent that can be used may be, but not limited to, gamma-butyl lactone (GBL), propylene glycol monomethyl ether acetate (PGMEA), and propylene glycol. Propylene glycol methyl ether (PGME), ethyl lactate, n-butyl acetate, cyclohexanone, ethyl 3-ethoxypropionate 3-ethoxypropionate), dimethyl diethylene glycol, N-methyl pyrrolidinone (NMP) or 2-heptanone (also known as Methyl Amyl Ketone, MAK) .

The photosensitive resin composition may optionally further comprise a catalyst and/or an additive. The catalyst facilitates the cyclization of the polybenzoxazole precursor to form polybenzoxazole. The catalyst that can be used can be, but is not limited to, mthyl p-toluenesulfonate (MPTS). Additives can be, but are not limited to, surface modifiers or development promoters. The surface modifier helps to make the surface of the photosensitive resin composition flat and uniform in film thickness. The surface modifier which can be used is, but not limited to, Fluorinated Acrylic Resin (trade name F561, purchased from DIC Co., Ltd.). ). Development accelerators help reduce process time. The weight ratio of the development accelerator to the photosensitive compound is MR2, which satisfies the following conditions: 0 < MR2 0.9, whereby the size of MR1 can be appropriately increased, and the threshold exposure dose (Eth) can be lowered. The development accelerator which can be used may be, but not limited to, a polyphenol, and the polyphenols which can be used are as shown in the formula (VIII-1) to (VIII-7) in Table 2:

Photosensitive resin

The photosensitive resin is formed by the above-mentioned photosensitive resin composition by a heating step, and the polybenzoxazole precursor is cyclized to form polyphenyloxazole by a heating step to obtain a photosensitive resin. The aforementioned heating step can be carried out at 150 ° C to 350 ° C for 1 hour to 5 hours.

Specifically, preparing the photosensitive resin comprises the steps of: first, performing a stirring step of forming a photosensitive resin composition (ie, a polybenzoxazole precursor, a photosensitive compound, a solvent, a catalyst (non-essential component), and an additive ( The optional component)) is mixed and stirred at normal temperature. In one embodiment, the aforementioned components are placed in a container and stirred at 120 rpm for about 1 hour using a stirrer.

Thereafter, a filtration step is carried out in which the stirred photosensitive resin composition is filtered and the filtrate is taken, and in one embodiment, a 0.45 μm polytetrafluoroethylene (PTFE) filter is used at a pressure of about 4 kg/cm ² . .

Next, a coating step is performed, and the obtained filtrate is applied onto a substrate to form a coating layer. The material of the substrate may be glass, and the coating method includes, but is not limited to, a roller coating method, a spin coating method, and A printing method is used to form a coating layer having a thickness of from 3.5 μm to 4.0 μm.

Finally, the coating layer is baked by heating to cyclize the polybenzoxazole precursor to form polybenzoxazole to obtain a photosensitive resin.

OLED display element

Please refer to FIG. 1 , which is a partial cross-sectional view showing an OLED display element according to an embodiment of the invention. The OLED display element includes a substrate 100, a thin film transistor 200, a passivation 300, a pixel defining layer 400, an anode 500, an organic light emitting layer 600, and a cathode 700. The thin film transistor 200 is disposed above the substrate 100, and the protective layer 300 is disposed above the thin film transistor 200. The pixel defining layer 400 is disposed above the protective layer 300, wherein the protective layer 300 and/or the pixel defining layer 400 can be the photosensitive layer of the present invention. Resin.

The thin film transistor 200 includes a gate 210, a gate insulating layer 220, a reactive layer 230, an etch stop layer 240, a drain 250, and a source 260. The reactive layer 230 may be amorphous or low temperature polysilicon (Low). Temperature Poly-Si) or Indium Gallium Zinc Oxide, in other words, the thin film transistor 200 may be an amorphous germanium transistor, a low temperature polycrystalline germanium transistor, or an indium gallium zinc oxide thin film transistor.

Please refer to FIG. 2 , which is another partial cross-sectional view of the OLED display element of FIG. 1 . In the second figure, when the protective layer 300 is the photosensitive resin of the present invention, it helps to reduce the light emitted by the organic light-emitting layer 600 through the pixel boundary line M in the direction of the arrow 800, thereby avoiding the generation of pixels. Light leaks. When the pixel defining layer 400 is the photosensitive resin of the present invention, it helps to reduce the light emitted by the organic light emitting layer 600 along the arrow 900. By passing the pixel boundary line M, it is possible to avoid light leakage between the pixels. Therefore, when the protective layer 300 and/or the pixel defining layer 400 are the photosensitive resin of the present invention, light leakage between pixels can be avoided, and the contrast of the OLED display element can be improved, thereby improving the imaging quality of the OLED display element.

Method for measuring the properties of photosensitive resin

(1) Measurement method of minimum exposure amount (Eth): After the photosensitive resin composition is subjected to a stirring step and a filtration step, it is coated on a glass substrate to form a coating layer of 3.8 μm to 4.0 μm, and the glass substrate can be selected from Corning ( 0.63mm thick EXG glass produced by Corning Inc., or 0.63mm thick OA-10 glass produced by Nippon Electric Glass Co., Ltd., and the coating layer is heated and baked to obtain a photosensitive resin. Thereafter, exposure (G, H, L Line) of different energies and development were carried out, wherein the development was carried out using TMAH as a developer for 60 seconds, after which it was observed at which energy there was no residual film, and the obtained energy was Eth. Eth is preferably less than or equal to 175 mJ/cm ² , more preferably less than 130 mJ/cm ² , and if Eth is greater than 175 mJ/cm ² , the process exposure time is too long.

(2) Method for measuring light transmittance (T%): A glass substrate covered with a photosensitive resin (formation method is the same as in the measurement method of Eth), and an ultraviolet-visible spectrometer (Model: Perkin-Elmer Lamda) 25) Measure the penetration rate. After the spectrometer is calibrated, place the glass substrate in the spectrometer. The scanning range is from 800 nm to 350 nm, and the transmittance of this interval is measured.

(3) Measurement method of dark erosion: a glass substrate covered with a photosensitive resin (the formation method and the phase measurement method of Eth) The same), thickness measurement was performed to obtain a thickness t1, and then the glass substrate was directly developed with 2.38 wt% TMAH for 60 seconds without exposure, and then a thickness measurement was performed to obtain a thickness t2, and the development loss was t1. -t2. The development loss is preferably in the range of 0 μm to 0.18 μm, and more preferably in the range of 0 μm to 0.1 μm.

According to the above embodiment, the specific embodiments will be described in detail below.

Synthesis of Polybenzoxazole Precursor (I-1)

Take 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (91.57 g, pyridine 39.55 g and 363 ml) NMP was added to a four-necked flask with a volume of 1 liter. After 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane was dissolved, it was cooled to 0 ° C in an ice bath, and then added dropwise with an addition funnel. An NMP solution of isophthaloyl chloride (45.68 g of m-benzoic acid chloride dissolved in 168 ml of NMP), after completion of the addition, react at room temperature for 3 hours, then add 2 liters of deionized water. The product precipitated, filtered, and finally baked in an oven at 60 ° C for 72 hours to obtain a polybenzoxazole precursor (I-1).

Synthesis of polybenzoxazole precursor (I-2)

45.68 g of m-xylylene chloride in the synthesis of the polybenzoxazole precursor (I-1) was replaced with 46.37 g of 1,4-cyclohexanedicarbonyl dichloride, and the remaining steps were the same. A polybenzoxazole precursor (I-2) is obtained.

Synthesis of polybenzoxazole precursor (I-3)

45.68 g of meta-xylylene chloride in the synthesis of polybenzoxazole precursor (I-1) was replaced with 66.40 g of 4,4'-Oxybisbenzoyl chloride. All of the same, a polybenzoxazole precursor (I-3) was obtained.

Photosensitive resin compositions of Examples 1 to 6 and Comparative Examples 1' to 4'

The polybenzoxazole precursor and the photosensitive compound are mixed and stirred at a normal temperature with 1 g of GBL, 5.5 g of PGMEA, 0.15 g of MPTS, and 0.25 g of F561 according to the components and amounts shown in Tables 3 and 4. The photosensitive resin compositions of Examples 1 to 6 and Comparative Examples 1' to 4' were formed.

In Table 4, N740 is a phenol novolac type epoxy resin (Phenol Novolac Type Epoxy Resin, purchased from DIC Co., Ltd.), and has a weight average molecular weight (Mw) of about 1,400, and its structure is as follows:

Applying the aforementioned photosensitive resin composition to a spin coating method 100 mm × 100 mm glass substrate, adjusting the rotation speed to form a coating layer of 3.8 μm, and then heating at 250 ° C for 1 hour using an oven, curing the coating layer to form a photosensitive resin, and measuring the light transmittance by an ultraviolet-visible spectrometer The results obtained are shown in Figure 3 and Table 5.

Please refer to FIG. 3, which illustrates Embodiments 1 to 4 according to the present invention. And the relationship between the light transmittance and the wavelength of Comparative Examples 1' and 2'. As is apparent from Fig. 3, the photosensitive resin formed by the photosensitive resin compositions of Examples 1 to 4 according to the present invention has lower light transmittance than Comparative Examples 1' and 2', and therefore, The photosensitive resin composition of the invention is used as a protective layer and/or a pixel defining layer in the OLED display element, which can effectively avoid light leakage between pixels, and can improve the contrast of the OLED display element, thereby improving imaging of the OLED display element. quality.

Referring to FIG. 3, it is understood that the photosensitive resin formed by the photosensitive resin compositions of Examples 1 to 4 of the present invention has a blocking wavelength of less than or equal to 400 nm. The effect of light penetration is particularly remarkable, and its light transmittance for wavelengths less than or equal to 400 nm is less than 11%.

Please refer to Table 5 at the same time. As shown in Table 5, Embodiment 1 of the present invention In 6 , the transmittance of light having a wavelength of less than or equal to 400 nm is at most 6.6% and the minimum is 0.29%, both being less than 11%, and both are smaller than the light penetration of the light of the wavelength of less than or equal to 400 nm in Comparative Examples 1' to 4'. rate.

At present, it has been pointed out that when the thin film transistor in the OLED light-emitting diode display element is an indium gallium zinc oxide thin film transistor, the indium gallium zinc oxide thin film transistor is irradiated with light having a wavelength of less than or equal to 400 nm, The sub-threshold swing (SS) in the drain current-gate voltage curve (Id-Vg Curve) changes, which affects the current supplied to the OLED, which in turn causes brightness changes and affects the OLED light-emitting diode. The body displays the imaging quality of the component. It can be seen from FIG. 3 and Table 5 that if the photosensitive resin of the present invention is used as a protective layer and/or a pixel defining layer in the OLED light emitting diode display element, not only light leakage between pixels but also light blocking can be effectively prevented. Light having a wavelength of less than or equal to 400 nm enters the indium gallium zinc oxide thin film transistor, and the image quality of the OLED light emitting diode display element can be maintained.

Please refer to Table VI, according to the composition and dosage of Table 6, mixed at room temperature With stirring, the photosensitive resin compositions of Examples 7 to 19 and Comparative Examples 5' to 6' were formed, and the amount of the component of Example 8 in Table 6 was further added, and 0.1 g of dodecyl mercaptan was further added at room temperature. The mixture was stirred to form Comparative Example 7', and 0.15 g of 5-phenyltetrazole was further added in an amount of the component of Example 8 in Table 6, and mixed and stirred at normal temperature to form Comparative Example 8'.

Photosensitive resins were prepared from the photosensitive resin compositions of Examples 7 to 19 and Comparative Examples 5' to 8', and the light transmittance, minimum exposure amount, and development loss of each photosensitive resin for a wavelength of less than or equal to 400 nm were measured, and the implementation was carried out. MR1 and MR2 of Examples 7 to 19 and Comparative Examples 5' to 8' and the above measurement results are shown in Table 7.

It can be seen from Table 7 that the light transmittances of the examples 7 to 19 for the wavelength of less than or equal to 400 nm are all less than or equal to 11%, and it is apparent that the photosensitive resin composition of the present invention can penetrate light having an effective blocking wavelength of less than or equal to 400 nm.

As is apparent from Examples 7 to 11, the larger the MR1 is, the smaller the light transmittance of the photosensitive resin with respect to a wavelength of 400 nm or less, and the smaller the minimum exposure amount. It can be seen from Examples 7 to 11 and Examples 12 to 16 that an appropriate amount of development promotion is added. The agent can reduce the minimum exposure amount, but if an excessive amount of development accelerator (MR2>0.9) is added, such as Comparative Example 5'~6', the photosensitive resin is peeled off after development, in other words, the photosensitive resin composition of the present invention is used alone. In the case, the light penetration of the wavelength less than or equal to 400 nm can be effectively blocked, and the larger the MR1, the better the blocking effect. In addition, the photosensitive resin composition of the present invention may be added with an appropriate amount of additives to enhance other properties. For example, when the MR1 value is high, an appropriate amount of the development accelerator may be added to make the photosensitive resin produced. Low minimum exposure to meet actual line requirements.

From Example 8 and Comparative Example 7', the addition of a thiol compound such as dodecyl mercaptan causes the development loss of the photosensitive resin in the unexposed area to be excessively high, and thus it is not recommended.

It can be seen from Example 8 and Comparative Example 8' that the addition of a tetrazole derivative such as 5-phenyltetrazole causes the development loss of the photosensitive resin in the unexposed area to be too high, and it is necessary to apply a higher thickness of the photosensitive resin to make up the loss. Thickness, it is not recommended.

In Example 8, Example 17, Example 18, and the photosensitive compound used in Example 19, the photosensitive compound (III-3), the photosensitive compound (V-1), and the photosensitive compound (VI-1) and The photosensitive compound (VII-1) can effectively reduce the light transmittance to a wavelength of less than or equal to 400 nm.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

300‧‧ ‧ protective layer

400‧‧‧ pixel definition layer

500‧‧‧Anode

600‧‧‧Organic light-emitting layer

700‧‧‧ cathode

800‧‧‧ arrow

900‧‧‧ arrow

M‧‧‧ pixel boundary

Claims (12)

A photosensitive resin composition comprising: a polybenzoxazole precursor having a structure represented by the formula (I): Wherein the X and the E series are each independently a divalent group, and the n is an integer of 5 to 60; and at least one photosensitive compound having the formula (II), the formula (III), the formula (IV), One of the structures shown in formula (V), formula (VI) or formula (VII): Wherein R ¹ to R ²⁰ are each independently a group represented by hydrogen, formula (i) or formula (ii), and at least one of R ¹ to R ⁴ is the formula (i) or the formula (ii) the group shown, wherein at least one of R ⁵ to R ⁷ is a group represented by the formula (i) or the formula (ii), and at least one of the R ⁸ to the R ¹⁰ is Or a group represented by the formula (i) or the formula (ii), wherein at least one of R ¹¹ to R ¹³ is a group represented by the formula (i) or the formula (ii), and the R ^{14 is} At least one of the R ¹⁶ is a group represented by the formula (i) or the formula (ii), and at least one of the R ¹⁷ to the R ^{20 is} represented by the formula (i) or the formula (ii) The group (i) and the formula (ii) are as follows: The photosensitive resin composition of claim 1, wherein the X is -C(CF ₃ ) ₂ -, -C(CH ₃ ) ₂ -, -O- or -S-. The photosensitive resin composition of claim 1, wherein the E is -(CH ₂ )m-, , , Wherein R ²¹ to R ²⁴ are each independently an alkyl group having 1 to 3 carbon atoms, an aromatic group having 3 to 7 carbon atoms or a cycloalkyl group, and m is an integer of 0 to 10, and the ratio of r is 1 to 10 The integer. The photosensitive resin composition of claim 1, wherein the weight ratio of the photosensitive compound to the polybenzoxazole precursor is MR1, which satisfies the following condition: 0.15 MR1 1. The photosensitive resin composition of claim 4, wherein a weight ratio of the photosensitive compound to the polybenzoxazole precursor is MR1, which satisfies the following conditions: The photosensitive resin composition of claim 4 further comprising a development accelerator. The photosensitive resin composition of claim 6, wherein a weight ratio of the development accelerator to the photosensitive compound is MR2, which satisfies the following condition: 0 < MR2 0.9. A photosensitive resin formed by a heating step of the photosensitive resin composition according to any one of claims 1 to 7, wherein the polybenzoxazole precursor is cyclized to form polybenzoxazole. The photosensitive resin of claim 8, wherein the heating step is carried out at 150 ° C to 350 ° C for 1 hour to 5 hours. The photosensitive resin of claim 8, wherein the photosensitive resin has a light transmittance of less than 11% for a wavelength of less than or equal to 400 nm. An organic light emitting diode display device comprising: a substrate; a thin film transistor disposed on the substrate; and the photosensitive resin according to claim 8, wherein the photosensitive resin is disposed above the thin film transistor. The organic light emitting diode display device of claim 11, wherein the thin film transistor is an amorphous silicon (Amorphous Si TFT), a low temperature poly-Si TFT, or an indium gallium zinc oxide film. Indium Gallium Zinc Oxide TFT.