TW201519871A - Nickel-copper alloy thin-film laminated film, electrode film for blood sugar sensor, strip for blood sugar sensor and device for blood sugar sensor - Google Patents

Nickel-copper alloy thin-film laminated film, electrode film for blood sugar sensor, strip for blood sugar sensor and device for blood sugar sensor Download PDF

Info

Publication number
TW201519871A
TW201519871A TW103135034A TW103135034A TW201519871A TW 201519871 A TW201519871 A TW 201519871A TW 103135034 A TW103135034 A TW 103135034A TW 103135034 A TW103135034 A TW 103135034A TW 201519871 A TW201519871 A TW 201519871A
Authority
TW
Taiwan
Prior art keywords
film
nickel
copper alloy
alloy thin
thin film
Prior art date
Application number
TW103135034A
Other languages
Chinese (zh)
Other versions
TWI609673B (en
Inventor
Munenori Komoto
Kazuhiro Abe
Original Assignee
Toyo Boseki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Boseki filed Critical Toyo Boseki
Publication of TW201519871A publication Critical patent/TW201519871A/en
Application granted granted Critical
Publication of TWI609673B publication Critical patent/TWI609673B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/48Systems using polarography, i.e. measuring changes in current under a slowly-varying voltage
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/307Disposable laminated or multilayered electrodes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3271Amperometric enzyme electrodes for analytes in body fluids, e.g. glucose in blood
    • G01N27/3272Test elements therefor, i.e. disposable laminated substrates with electrodes, reagent and channels

Abstract

The present invention provides a nickel-copper alloy thin-film laminated film that is inexpensive, has low surface electrical resistivity and chemical resistance, is excellent in storage stability, and can be used favorably as an electrode film for biosensors such as a blood sugar sensor. The film of the present invention is laminated with a nickel-copper alloy thin-film directly on at least one surface of a base material of the film or is laminated on the at least one surface of the base material of the film with other layers in between. The nickel-copper alloy thin-film has a nickel content between 40% to 95% by weight, and X-ray diffraction patterns of the nickel-copper alloy thin-film are demonstrated at three ranges: 43 DEG ≤ 2 [theta] ≤ 45 DEG, 49 DEG ≤ 2 [theta] ≤ 52 DEG, and 74 DEG ≤ 2 [theta] ≤ 77 DEG with a diffraction peak in at least one of three ranges.

Description

鎳銅合金薄膜積層膜、血糖值感測器用電極膜、血糖值感測器用條及血糖值感測器裝置 Nickel-copper alloy film laminated film, electrode film for blood sugar level sensor, blood glucose sensor strip and blood sugar level sensor device

本發明係關於一種鎳銅合金薄膜積層膜,更詳細而言,本發明係關於一種由於鎳銅合金薄膜之結晶性高,因此耐化學品性(chemical resistance)及長期保存穩定性優異,且可適合作為血糖值感測器用電極使用的鎳銅合金薄膜積層膜。 The present invention relates to a nickel-copper alloy thin film laminated film, and more particularly, the present invention relates to a nickel-copper alloy thin film which is excellent in chemical resistance and long-term storage stability because of its high crystallinity. A nickel-copper alloy thin film laminated film suitable for use as an electrode for blood glucose sensor.

血糖值感測器係用以由糖尿病患者或懷疑有糖尿病的人每天測量數次血糖值以管理血糖值的數值。於血糖值感測器中,為了檢測血糖值,以往係使用對積層有昂貴的金薄膜之電極膜進行圖案化而成之血糖值感測器(專利文獻1)。其原因在於:積層有金薄膜之電極膜具有對於作為感 測器之可靠性而言重要的較低之表面電阻值,且於耐化學品性及長期保存穩定性中優異。 A blood glucose sensor is used to measure the value of a blood glucose level by measuring the blood glucose level several times a day by a diabetic patient or a person suspected of having diabetes. In the blood glucose level sensor, in order to detect the blood sugar level, a blood glucose sensor which is formed by patterning an electrode film having an expensive gold thin film is used (Patent Document 1). The reason is that the electrode film with a gold film laminated has a sense of The lower surface resistance value is important for the reliability of the detector, and is excellent in chemical resistance and long-term storage stability.

另一方面,糖尿病患者以歐美為中心較多,但近年來有於日本、中國、印度等世界中患者數增加之傾向。因此,廉價的血糖值感測器之期望增加,伴隨於此,使用廉價的電極材料之電極膜之期望變強。然而,除金薄膜以外,於耐化學品性及長期保存穩定性中獲得市場之信賴而實際上獲得成功之原材料似乎並不多。 On the other hand, people with diabetes are more likely to be centered in Europe and the United States, but in recent years there has been an increase in the number of patients in the world such as Japan, China, and India. Therefore, the expectation of an inexpensive blood sugar level sensor increases, and as a result, the electrode film using an inexpensive electrode material is expected to become strong. However, in addition to the gold film, there is not much raw material that has gained market confidence in chemical resistance and long-term storage stability, and actually succeeded.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本特開2011-50300號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-50300

亦即,有鑒於上述以往之問題點,本發明之目的在於提供一種鎳銅合金薄膜積層膜,其廉價,具有較低之表面電阻值、耐化學品性,且長期保存穩定性優異,可適合作為血糖值感測器等之生物感測器(biosensor)用電極膜使用。 That is, in view of the above conventional problems, an object of the present invention is to provide a nickel-copper alloy thin film laminated film which is inexpensive, has a low surface resistance value, chemical resistance, and has excellent long-term storage stability and is suitable for use. It is used as an electrode film for a biosensor such as a blood sugar level sensor.

亦即,本發明包含以下之構成。 That is, the present invention includes the following constitution.

1.一種鎳銅合金薄膜積層膜,其係於膜基材之至少單面上直接或隔著其他層而積層有鎳銅合金薄膜之膜,鎳銅合金薄膜中之鎳的含有率為40重量%以上95重量%以下,鎳銅合金薄膜於X射線繞射圖案中,於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍中之至少1個範圍具有繞射峰值。 A nickel-copper alloy thin film laminated film which is formed by laminating a film of a nickel-copper alloy film directly on at least one side of a film substrate or via another layer, and the nickel content in the nickel-copper alloy film is 40% by weight. % or more and 95% by weight or less, the nickel-copper alloy film in the X-ray diffraction pattern is in the range of 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77° At least 1 range has a diffraction peak.

2.如上述1所記載之鎳銅合金薄膜積層膜,其中鎳銅合金薄膜中之氧原子數相對於鎳原子數、銅原子數及氧原子數的總和之比O/(Ni+Cu+O)為0.05以下。 2. The nickel-copper alloy thin film laminated film according to the above 1, wherein the ratio of the number of oxygen atoms in the nickel-copper alloy thin film to the sum of the number of nickel atoms, the number of copper atoms, and the number of oxygen atoms is O/(Ni+Cu+O ) is 0.05 or less.

3.如上述1或2所記載之鎳銅合金薄膜積層膜,其中表面電阻值為300Ω/□以下。 3. The nickel-copper alloy thin film laminated film according to the above 1 or 2, wherein the surface resistance value is 300 Ω/□ or less.

4.如上述1或2所記載之鎳銅合金薄膜積層膜,其中於膜基材與鎳銅合金薄膜之間具有中間層,中間層係鈦或鎳-鈦合金之薄膜。 4. The nickel-copper alloy thin film laminated film according to the above 1 or 2, wherein an intermediate layer is provided between the film substrate and the nickel-copper alloy film, and the intermediate layer is a film of titanium or a nickel-titanium alloy.

5.如上述4所記載之鎳銅合金薄膜積層膜,其中鎳銅合金薄膜與中間層之膜厚之合計為10nm以上400nm以下。 5. The nickel-copper alloy thin film laminated film according to the above 4, wherein a total thickness of the nickel-copper alloy thin film and the intermediate layer is 10 nm or more and 400 nm or less.

6.如上述1、2或5所記載之鎳銅合金薄膜積層膜,其滿足以下之必要條件:(1)於以銀或氯化銀作為參考電極的亞鐵氰化物離子之循環伏安法測量中,於+0.2V至+0.5V之間的電位顯示氧化峰值電流,於0V至+0.3V之間的電位顯示還原峰值電流;(2)於進行2次循環伏安法測量之情形時,由第2次循環伏安法測量所得之氧化峰值電流與還原峰值電流顯示與由第1次循環伏安法測量所得之氧化峰值電流與還原峰值電 流實質上相同的電流。 6. The nickel-copper alloy thin film laminated film according to the above 1, 2 or 5, which satisfies the following requirements: (1) Cyclic voltammetry of ferrocyanide ions using silver or silver chloride as a reference electrode In the measurement, the potential between +0.2V and +0.5V shows the peak current of oxidation, the potential between 0V and +0.3V shows the peak current of reduction; (2) when the measurement of 2 cycles of voltammetry is performed The oxidation peak current and the reduction peak current measured by the second cyclic voltammetry show the oxidation peak current and the reduction peak current measured by the first cyclic voltammetry. The flow is substantially the same current.

7.一種血糖值感測器(sensor)用電極膜,其係對構成如上述1至6中任一項所記載之鎳銅合金薄膜積層膜的鎳銅合金薄膜實施圖案化而成。 An electrode film for a blood glucose sensor, which is obtained by patterning a nickel-copper alloy thin film which is a nickel-copper alloy thin film laminated film according to any one of the above 1 to 6.

8.一種血糖值感測器用條(strip),其係使用如上述7所記載之血糖值感測器用電極膜而成。 A strip for a blood sugar level sensor, which is obtained by using the electrode film for a blood glucose sensor according to the above seventh aspect.

9.一種血糖值感測器裝置(device),其係使用如上述8所記載之血糖值感測器用條而成。 A blood glucose sensor device, which is obtained by using a blood glucose sensor strip as described in the above 8.

藉由本發明可提供一種鎳銅合金薄膜積層膜,其廉價,具有較低之表面電阻值、較高之耐化學品性、長期保存穩定性優異,可適合作為血糖值感測器等之生物感測器用電極膜使用。而且,使用本發明之鎳銅合金薄膜積層膜的血糖值感測器等之生物感測器用電極膜可穩定地取出電訊號。 According to the present invention, a nickel-copper alloy thin film laminated film can be provided which is inexpensive, has a low surface resistance value, high chemical resistance, and excellent long-term storage stability, and can be suitably used as a biological sense of a blood sugar level sensor or the like. The electrode film for the detector is used. Further, the electrode film for a biosensor using a blood glucose sensor or the like of the nickel-copper alloy thin film laminated film of the present invention can stably take out the electric signal.

圖1係表示實施例1之鎳銅合金薄膜積層膜之X射線繞射圖案的圖。 Fig. 1 is a view showing an X-ray diffraction pattern of a nickel-copper alloy thin film laminated film of Example 1.

圖2係表示實施例1之鎳銅合金薄膜積層膜之X射線光電子光譜法之深度分析結果的圖。 Fig. 2 is a graph showing the results of in-depth analysis by X-ray photoelectron spectroscopy of the nickel-copper alloy thin film laminated film of Example 1.

圖3係實施例1之鎳銅合金薄膜積層膜之循環伏安法(cyclic voltammetry)測量結果的循環伏安圖(cyclic voltammogram)。 Figure 3 is a cyclic voltammogram of the cyclic voltammetry measurement of the nickel-copper alloy thin film laminated film of Example 1. Voltammogram).

本發明中之鎳銅合金薄膜積層膜係於膜基材之至少單面上直接或隔著其他層而積層有鎳銅合金薄膜之膜。該鎳銅合金薄膜之鎳含有率較佳為40重量%以上、95重量%以下,更佳為50重量%以上、90重量%以下。若未達40重量%,則耐化學品性及長期保存穩定性差,且於後述之循環伏安法評價中變得難以獲得適宜之亞鐵氰化物離子之循環伏安法評價結果,變得難以作為血糖值感測器用電極而使用,因此欠佳。另外,若大於95重量%,則於藉由濺鍍而製造之情形時,堆積速度降低,生產性變差,因此欠佳。再者,亦存在於薄膜中含有極微量之氧等除鎳與銅以外之其他物質之情形,鎳與銅之含有率相加之和不會總是精確地成為100重量%,銅之含有率較佳的是大概為5重量%以上60重量%以下。 The nickel-copper alloy thin film laminated film in the present invention is a film in which a nickel-copper alloy thin film is laminated on at least one surface of the film substrate directly or via another layer. The nickel content of the nickel-copper alloy film is preferably 40% by weight or more and 95% by weight or less, more preferably 50% by weight or more and 90% by weight or less. If it is less than 40% by weight, chemical resistance and long-term storage stability are poor, and it becomes difficult to obtain a cyclic voltammetry evaluation result of a suitable ferrocyanide ion in the cyclic voltammetry evaluation described later, and it becomes difficult. It is used as an electrode for a blood sugar level sensor, and thus is not preferable. On the other hand, when it is more than 95% by weight, when it is produced by sputtering, the deposition rate is lowered and the productivity is deteriorated, which is not preferable. Further, in the case where the film contains a trace amount of oxygen or the like other than nickel and copper, the sum of the contents of nickel and copper does not always become exactly 100% by weight, and the content of copper is high. It is preferably about 5% by weight or more and 60% by weight or less.

由於本發明中之鎳銅合金薄膜積層膜之鎳銅合金薄膜的結晶性高,因此於X射線繞射圖案中,於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°之3個範圍的至少1個範圍中具有繞射峰值。因為其較高之結晶性,耐化學品性及長期保存穩定性優異,且於亞鐵氰化物離子之循環伏安法中顯示適宜之峰值,可適合作為血糖值感測器用電極使用。再者,可知無論鎳銅合金為結晶抑或為非晶質,即使 於3重量%之鐵氰化鉀水溶液中浸漬20日,電阻值亦不變化。因此,本發明中之耐化學品性成為後述之實施例中所記載之條件的耐酸性試驗。 Since the nickel-copper alloy film of the nickel-copper alloy film laminated film of the present invention has high crystallinity, in the X-ray diffraction pattern, at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°. A diffraction peak is included in at least one of three ranges of ≦2θ ≦ 77°. Because of its high crystallinity, excellent chemical resistance and long-term storage stability, and suitable peaks in cyclic voltammetry of ferrocyanide ions, it can be suitably used as an electrode for blood glucose sensor. Furthermore, it can be seen that even if the nickel-copper alloy is crystalline or amorphous, even After immersing in a 3 wt% potassium ferricyanide aqueous solution for 20 days, the resistance value did not change. Therefore, the chemical resistance in the present invention is an acid resistance test under the conditions described in the examples below.

本發明中之鎳銅合金薄膜積層膜鎳銅合金薄膜,藉由X射線光電子光譜法之深度分析所測量之氧原子數相對於鎳原子數、銅原子數及氧原子數的總和之比O/(Ni+Cu+O)於確實地認為是該薄膜之範圍中為0.05以下,更佳為0.04以下。若為0.05以下,則耐化學品性及長期保存穩定性優異,且於適宜之亞鐵氰化物離子之循環伏安法中容易獲得適宜之結果,故較佳為可作為血糖值感測器用電極使用。較佳的是O/(Ni+Cu+O)值較小,且亦存在成為零之情形。再者,所謂確實地認為是鎳銅合金薄膜部之範圍是指並無表面之污染物質之影響及基材之塑膠膜之影響,確實地僅測量鎳銅合金薄膜之範圍,如於後述之實施例中的條件下所測量之圖2所示:於蝕刻時間自零起變大之情形時,是指自O/(Ni+Cu+O)之斜率成為-0.01以上之起直至達到0.01之範圍。 In the nickel-copper alloy thin film laminated film nickel-copper alloy film of the present invention, the ratio of the number of oxygen atoms measured by the depth analysis by X-ray photoelectron spectroscopy to the sum of the number of nickel atoms, the number of copper atoms, and the number of oxygen atoms is O/ (Ni + Cu + O) is preferably 0.05 or less, more preferably 0.04 or less in the range of the film. When it is 0.05 or less, it is excellent in chemical resistance and long-term storage stability, and it is easy to obtain a suitable result in a cyclic voltammetry method of a suitable ferrocyanide ion, and therefore it is preferably used as an electrode for a blood glucose sensor. use. It is preferable that the O/(Ni+Cu+O) value is small, and there is also a case where it becomes zero. In addition, it is said that the range of the nickel-copper alloy thin film portion means that there is no influence of the surface contaminant and the influence of the plastic film of the substrate, and only the range of the nickel-copper alloy film is reliably measured, as will be described later. Figure 2 measured under the conditions in the example: when the etching time becomes larger from zero, it means that the slope from O/(Ni+Cu+O) becomes -0.01 or more until the range of 0.01 is reached. .

本發明中之鎳銅合金薄膜積層膜之表面電阻值較佳為300Ω/□以下,更佳為100Ω/□以下,特佳為50Ω/□以下。於表面電阻值為300Ω/□以下之情形時,於上述循環伏安法評價中可確實地確認氧化峰值電流與還原峰值電流,於作為血糖值感測器之電極而使用時確實地獲得電訊號而較佳。 較佳為表面電阻值低,但通常不能達成0Ω/□,其下限可為0.01Ω/□,亦可為1Ω/□以上。 The surface resistivity of the nickel-copper alloy thin film laminated film in the present invention is preferably 300 Ω/□ or less, more preferably 100 Ω/□ or less, and particularly preferably 50 Ω/□ or less. When the surface resistance value is 300 Ω/□ or less, the oxidation peak current and the reduction peak current can be surely confirmed in the above cyclic voltammetry evaluation, and the electric signal is surely obtained when used as an electrode of the blood glucose sensor. Better. It is preferable that the surface resistance value is low, but usually 0 Ω / □ cannot be achieved, and the lower limit thereof may be 0.01 Ω / □, or may be 1 Ω / □ or more.

於本發明中,較佳的是鎳銅合金薄膜積層膜於以銀或氯化銀作為參考電極之亞鐵氰化物離子之循環伏安法測量中,於+0.2V至+0.5V之間的電位顯示氧化峰值電流。其表示本發明之鎳銅合金薄膜積層膜上的鎳銅合金薄膜並不會溶解於亞鐵氰化物離子中,而是能將亞鐵氰化物離子氧化為鐵氰化物離子,其係證實可作為血糖值感測器之電極而適宜地動作之指標。於該範圍外所觀測之氧化峰值電流係由於亞鐵氰化物以外之物質氧化而引起的,與作為血糖值感測器電極而適宜地動作並無關係。另外,於大於+0.5V之情形時,會造成於作為血糖值感測器電極而動作時需要較大之電壓,因此欠佳。 In the present invention, it is preferred that the nickel-copper alloy thin film laminated film is in a cyclic voltammetry measurement of ferrocyanide ions using silver or silver chloride as a reference electrode, between +0.2V and +0.5V. The potential shows the peak current of oxidation. It is shown that the nickel-copper alloy film on the nickel-copper alloy thin film laminated film of the present invention does not dissolve in the ferrocyanide ions, but can oxidize the ferrocyanide ions into ferricyanide ions, which is confirmed to be An indicator of the appropriate action of the electrode of the blood glucose sensor. The peak oxidation current observed outside this range is caused by oxidation of substances other than ferrocyanide, and it does not depend on the operation as a blood glucose sensor electrode. In addition, when it is larger than +0.5 V, a large voltage is required to operate as a blood glucose sensor electrode, which is not preferable.

於本發明中,較佳的是鎳銅合金薄膜積層膜於0V至+0.3V之間的電位顯示還原峰值電流。其表示本發明之鎳銅合金薄膜積層膜上的鎳銅合金薄膜並不會溶解於鐵氰化物離子中,而是能將鐵氰化物離子還原為亞鐵氰化物離子,其係證實可作為血糖值感測器之電極而適宜地動作之指標。於該範圍外所觀測之還原峰值電流係由於鐵氰化物以外之物質還原而引起的,與作為血糖值感測器電極而適宜地動作並無關係。氧化峰值電流及還原峰值電流之絕對值因測量條件而異,於本發明之實施例之條件中為0.05mA 以上2mA以下。若為0.05mA以上,則作為鎳銅合金薄膜之本質而言產生上述之氧化還原反應,成為問題之鎳銅合金薄膜並不會溶出,而是正常地產生上述氧化還原反應。 若為2mA以下,則可判斷電流值不會過大,成為問題之鎳銅合金薄膜不會溶出。於本發明中,滿足上述必要條件之情形時的循環伏安法測量之輪廓例如成為如圖3所示之形狀。 In the present invention, it is preferred that the nickel-copper alloy film laminate film exhibits a reduction peak current at a potential between 0 V and +0.3 V. It is shown that the nickel-copper alloy film on the nickel-copper alloy thin film laminated film of the present invention does not dissolve in the ferricyanide ion, but can reduce the ferricyanide ion to the ferrocyanide ion, which is confirmed to be useful as blood sugar. An indicator of the appropriate action of the electrodes of the value sensor. The reduction peak current observed outside this range is caused by the reduction of substances other than ferricyanide, and is not related to the proper operation as the blood glucose sensor electrode. The absolute values of the oxidation peak current and the reduction peak current vary depending on the measurement conditions, and are 0.05 mA in the conditions of the embodiment of the present invention. Above 2 mA. When it is 0.05 mA or more, the above-described redox reaction occurs as a nickel-copper alloy thin film, and the nickel-copper alloy thin film which is a problem does not elute, but the above-described redox reaction is normally generated. When it is 2 mA or less, it can be judged that the current value is not excessively large, and the nickel-copper alloy film which is a problem does not elute. In the present invention, the profile measured by the cyclic voltammetry when the above-mentioned necessary conditions are satisfied becomes, for example, a shape as shown in FIG.

即使為鎳銅合金薄膜中的鎳之含有率並非40重量%以上95重量%以下,或者鎳銅合金薄膜於X射線繞射圖案中於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍中的任一範圍中均不具有繞射峰值之鎳銅合金薄膜積層膜,於循環伏安法評價中亦顯示依存於葡萄糖濃度之電流值。然而,鎳銅合金薄膜不穩定,因此再現性較低,並不佳。 Even if the nickel content in the nickel-copper alloy film is not 40% by weight or more and 95% by weight or less, or the nickel-copper alloy film is in the X-ray diffraction pattern at 43°≦2θ≦45°, 49°≦2θ≦52° And a nickel-copper alloy thin film laminated film which does not have a diffraction peak in any of the three ranges of 74° ≦ 2θ ≦ 77°, and also shows a current value depending on the glucose concentration in the cyclic voltammetry evaluation. However, the nickel-copper alloy film is unstable, so the reproducibility is low and it is not preferable.

因此,為了作為血糖值感測器用電極而進一步適宜地發揮功能,較佳的是滿足以下之必要條件。亦即,於循環伏安法之第2次測量中顯示與第1次之測量結果實質上相同之氧化及還原峰值電流。此處,所謂「實質上」是指顯示氧化及還原峰值電流之電位的值為±0.05V,氧化及還原峰值電流值係於絕對值中±20%之範圍。其表示即使經過第1次之測量的氧化反應及還原反應,本發明之鎳銅合金薄膜積層膜上的鎳銅合金薄膜亦不會溶解而穩定地殘留、及 表面形態並未變化,表示該鎳銅合金薄膜非常適合作為血糖值感測器用電極。 Therefore, in order to function more suitably as an electrode for a blood sugar level sensor, it is preferable to satisfy the following requirements. That is, in the second measurement of the cyclic voltammetry, the oxidation and reduction peak currents which are substantially the same as the first measurement result are shown. Here, "substantially" means that the value of the potential for the oxidation and reduction peak current is ±0.05 V, and the oxidation and reduction peak current value is within ±20% of the absolute value. It is shown that the nickel-copper alloy film on the nickel-copper alloy thin film laminated film of the present invention does not dissolve and remains stably even after the oxidation reaction and the reduction reaction measured in the first time, and The surface morphology did not change, indicating that the nickel-copper alloy film is very suitable as an electrode for a blood glucose sensor.

本發明之鎳銅合金薄膜積層膜具有於膜基材之至少單面上直接或隔著其他層而積層有鎳銅合金薄膜之結構。以下,分別對各層加以詳細說明。 The nickel-copper alloy thin film laminated film of the present invention has a structure in which a nickel-copper alloy thin film is laminated on at least one surface of the film substrate directly or via another layer. Hereinafter, each layer will be described in detail.

(膜基材) (film substrate)

本發明中所使用之所謂膜基材係指將有機高分子熔融擠壓為膜狀或進行溶液擠壓而成形為膜狀,視需要於長度方向及/或寬度方向上實施延伸、熱固定、熱鬆弛處理等而成之膜。作為有機高分子,可列舉:聚乙烯、聚丙烯、聚對苯二甲酸乙二酯、聚-2,6-萘二甲酸乙二酯、聚對苯二甲酸丙二醇酯、尼龍6、尼龍4、尼龍66、尼龍12、聚醯亞胺、聚醯胺醯亞胺、聚醚碸(Polyethersulfone)、聚醚醚酮、聚碳酸酯、聚芳酯、丙酸纖維素、聚氯乙烯、聚偏二氯乙烯、聚乙烯醇、聚醚醯亞胺、聚苯硫醚、聚苯醚、聚苯乙烯、間規聚苯乙烯、降冰片烯系聚合物等。 The film substrate used in the present invention means that the organic polymer is melt-extruded into a film shape or subjected to solution extrusion to form a film, and is extended and thermally fixed in the longitudinal direction and/or the width direction as necessary. A film formed by thermal relaxation treatment. Examples of the organic polymer include polyethylene, polypropylene, polyethylene terephthalate, polyethylene-2,6-naphthalenedicarboxylate, polytrimethylene terephthalate, nylon 6, and nylon 4. Nylon 66, nylon 12, polyimine, polyamidimide, polyethersulfone, polyetheretherketone, polycarbonate, polyarylate, cellulose propionate, polyvinyl chloride, polyvinylidene Vinyl chloride, polyvinyl alcohol, polyether phthalimide, polyphenylene sulfide, polyphenylene ether, polystyrene, syndiotactic polystyrene, norbornene-based polymer, and the like.

該等有機高分子中,聚對苯二甲酸乙二酯、聚對苯二甲酸丙二醇酯、聚-2,6-萘二甲酸乙二酯、間規聚苯乙烯、降冰片烯系聚合物、聚碳酸酯、聚芳酯等較佳。另外,該等有機高分子亦可少量共聚合其他有機聚合物之單體,亦可摻合其他有機高分子。 Among these organic polymers, polyethylene terephthalate, polytrimethylene terephthalate, polyethylene-2,6-naphthalenedicarboxylate, syndiotactic polystyrene, norbornene-based polymer, Polycarbonate, polyarylate, and the like are preferred. In addition, the organic polymers may also copolymerize a small amount of a monomer of another organic polymer or may blend other organic polymers.

本發明中所使用之膜基材之厚度較佳為10μm~300μm,更佳為20μm~250μm。若塑膠膜之厚度為10μm以上,則可滿足機械強度,一般可確保血糖值感測器等感測器之操作,因此較佳。另一方面,若厚度為300μm以下,則血糖值感測器等感測器之厚度並不會變得過厚而較佳。 The thickness of the film substrate used in the present invention is preferably from 10 μm to 300 μm, more preferably from 20 μm to 250 μm. If the thickness of the plastic film is 10 μm or more, the mechanical strength can be satisfied, and the operation of the sensor such as the blood sugar level sensor can be generally ensured, which is preferable. On the other hand, when the thickness is 300 μm or less, the thickness of the sensor such as the blood glucose sensor is not excessively thick and preferable.

本發明中所使用之膜基材亦可於不損及本發明之目的之範圍內,而對如上所述之膜實施電暈放電處理、輝光放電處理、火焰處理、紫外線照射處理、電子束照射處理、臭氧處理等表面活性化處理。 The film substrate used in the present invention may be subjected to corona discharge treatment, glow discharge treatment, flame treatment, ultraviolet irradiation treatment, or electron beam irradiation on the film as described above without damaging the object of the present invention. Surface activation treatment such as treatment and ozone treatment.

另外,於本發明中所使用之膜基材中,以提高與鎳銅合金薄膜之密接性、賦予耐化學品性、防止寡聚物等低分子量物析出為目的,較佳為設置以硬化型樹脂為主要構成成分之硬化物層。 Further, in the film substrate used in the present invention, it is preferable to provide a curing type for the purpose of improving the adhesion to the nickel-copper alloy film, imparting chemical resistance, and preventing precipitation of low molecular weight substances such as oligomers. The resin is a cured layer of a main constituent.

前述硬化型樹脂只要為藉由加熱、紫外線照射、電子束照射等能量施加而硬化之樹脂,則並無特別限定,可列舉矽氧樹脂、丙烯酸樹脂、甲基丙烯酸樹脂、環氧樹脂、三聚氰胺樹脂、聚酯樹脂、胺基甲酸酯樹脂等。 The curable resin is not particularly limited as long as it is cured by energy application such as heating, ultraviolet irradiation, or electron beam irradiation, and examples thereof include a silicone resin, an acrylic resin, a methacrylic resin, an epoxy resin, and a melamine resin. , polyester resin, urethane resin, and the like.

(鎳銅合金薄膜) (nickel-copper alloy film)

本發明中之鎳銅合金薄膜與後述之中間層之合計膜厚 較佳為10nm~400nm之範圍,更佳為15nm~300nm,特佳為20nm~250nm。只要該膜厚為10nm以上,則於薄膜生成針孔之虞較小,於作為血糖值感測器之電極而使用時可確實地獲得電訊號,因此較佳。另一方面,於該膜厚為400nm以下之情形時,鎳銅合金薄膜之剛性不會過大,並無剝離或密接性降低之虞,另外亦不產生基材翹曲之問題,因此較佳。於藉由例如濺鍍法而成膜之情形時,膜厚可藉由改變膜通過鎳銅合金靶上時之速度而控制。 The total film thickness of the nickel-copper alloy film in the present invention and the intermediate layer described later It is preferably in the range of 10 nm to 400 nm, more preferably 15 nm to 300 nm, and particularly preferably 20 nm to 250 nm. When the film thickness is 10 nm or more, the pinhole of the film formation is small, and when the electrode is used as the electrode of the blood glucose sensor, the electric signal can be surely obtained, which is preferable. On the other hand, when the film thickness is 400 nm or less, the rigidity of the nickel-copper alloy film is not excessively large, and there is no problem that the peeling or the adhesion is lowered, and the problem of warpage of the substrate does not occur, which is preferable. In the case of film formation by, for example, sputtering, the film thickness can be controlled by changing the speed at which the film passes over the nickel-copper alloy target.

本發明中之鎳銅合金薄膜較佳的是鎳含有率為40重量%以上、95重量%以下。若未達40重量%,則難以獲得適宜之循環伏安法之評價結果,其結果變得難以作為血糖值感測器用電極使用。另外,若大於95重量%,則於藉由濺鍍而製造之情形時,堆積速度降低,生產性變差,因此欠佳。 The nickel-copper alloy film in the present invention preferably has a nickel content of 40% by weight or more and 95% by weight or less. If it is less than 40% by weight, it is difficult to obtain an evaluation result of a suitable cyclic voltammetry, and as a result, it becomes difficult to use it as an electrode for a blood glucose sensor. On the other hand, when it is more than 95% by weight, when it is produced by sputtering, the deposition rate is lowered and the productivity is deteriorated, which is not preferable.

本發明中之鎳銅合金薄膜由於結晶性高,因此於X射線繞射圖案中,於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍之至少1個範圍具有繞射峰值。 由於其較高之結晶性,耐化學品性及長期保存穩定性優異,且於亞鐵氰化物離子之循環伏安法中顯示適宜之峰值,可適合作為血糖值感測器用電極使用。 Since the nickel-copper alloy film of the present invention has high crystallinity, it is in the X-ray diffraction pattern at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°. At least one of the ranges has a diffraction peak. Due to its high crystallinity, excellent chemical resistance and long-term storage stability, and suitable peaks in cyclic voltammetry of ferrocyanide ions, it is suitable for use as an electrode for blood glucose sensor.

本發明中之鎳銅合金薄膜,藉由X射線光電子光譜法之深度分析所測量之氧原子數相對於氧原子數、鎳原子數及銅原子數的總和之比O/(Ni+Cu+O)於確實認為是該薄膜之範圍中為0.05以下,更佳為0.04以下。若大於0.05,則存在耐化學品性及長期保存穩定性差,且於適宜之亞鐵氰化物離子之循環伏安法中無法獲得適宜之評價結果之情形,變得難以作為血糖值感測器用電極使用。較佳的是O/(Ni+Cu+O)較小,亦存在成為零之情形。再者,所謂確實地認為是鎳銅合金薄膜之範圍係指並無表面之污染物質之影響及基材之塑膠膜之影響,確實地僅測量鎳銅合金薄膜之範圍,如於後述之實施例中之條件下所測量之圖2所示:於蝕刻時間自零起變大之情形時,是指自O/(Ni+Cu+O)之斜率成為-0.01以上起直至達到0.01以上之範圍。 In the nickel-copper alloy film of the present invention, the ratio of the number of oxygen atoms measured by the depth analysis by X-ray photoelectron spectroscopy to the sum of the number of oxygen atoms, the number of nickel atoms, and the number of copper atoms is O/(Ni+Cu+O It is considered to be 0.05 or less, more preferably 0.04 or less, in the range of the film. If it is more than 0.05, there is a case where chemical resistance and long-term storage stability are poor, and a suitable evaluation result cannot be obtained in a cyclic voltammetry method of a suitable ferrocyanide ion, and it becomes difficult to use it as an electrode for a blood sugar level sensor. use. It is preferable that O/(Ni+Cu+O) is small, and there is also a case where it becomes zero. Furthermore, the range of the nickel-copper alloy film is considered to be the influence of the surface-free contaminant and the influence of the plastic film of the substrate, and only the range of the nickel-copper alloy film is measured, as will be described later. In the case of the measurement under the condition of FIG. 2, when the etching time becomes larger from zero, it means that the slope of O/(Ni+Cu+O) becomes -0.01 or more until it reaches 0.01 or more.

鎳銅合金薄膜之膜厚較佳為5nm~400nm。若為5nm以上,則獲得使電阻值降低之效果而較佳。若為400nm以下,則保持與膜基材之密接性,亦無積層有鎳銅合金之膜彎曲之虞而較佳。 The film thickness of the nickel-copper alloy film is preferably from 5 nm to 400 nm. When it is 5 nm or more, the effect of lowering the resistance value is obtained, and it is preferable. When it is 400 nm or less, the adhesion to the film substrate is maintained, and it is preferable that the film of the nickel-copper alloy is not laminated.

為了使與鎳銅合金薄膜之密接性提高、及實現生產性之提高,亦可於與基材膜之間設置鈦、鎳-鈦合金之任一薄膜層作為中間層。至於中間層之膜厚,只要作為鎳銅合金 薄膜整體之膜厚成為上述10nm~400nm之範圍之方式適宜設定即可。鎳-鈦合金之組成可任意地選擇。 In order to improve the adhesion to the nickel-copper alloy film and to improve the productivity, any film layer of titanium or a nickel-titanium alloy may be provided as an intermediate layer between the substrate film and the substrate film. As for the film thickness of the intermediate layer, as long as it is a nickel-copper alloy The film thickness of the entire film may be appropriately set so as to be in the range of 10 nm to 400 nm. The composition of the nickel-titanium alloy can be arbitrarily selected.

<鎳銅合金薄膜之成膜方法> <Method of Film Formation of Nickel-Copper Alloy Film>

作為本發明中之鎳銅合金薄膜之成膜方法,已知有真空蒸鍍法、濺鍍(Sputtering)法、化學氣相沈積(chemical vapor deposition,CVD)法、離子鍍(ion plating)法、噴霧(spray)法等,可根據所需之膜厚而適宜使用前述方法,但自表現出較高之附著力或減低膜厚之不均一的觀點考慮,較佳為濺鍍法。 As a film forming method of the nickel-copper alloy film in the present invention, a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition (CVD) method, an ion plating method, and the like are known. In the spray method or the like, the above method can be suitably used depending on the desired film thickness. However, from the viewpoint of exhibiting high adhesion or reducing the unevenness of the film thickness, a sputtering method is preferred.

此時,亦可併用電漿照射、離子輔助等手段。另外,亦可於不損及本發明之目的之範圍內對基板施加直流、交流、高頻等偏壓。 At this time, it is also possible to use a combination of plasma irradiation, ion assist, and the like. Further, a bias voltage such as a direct current, an alternating current, or a high frequency may be applied to the substrate within a range not impairing the object of the present invention.

若於濺鍍時之成膜環境中含有水,則阻礙鎳銅合金薄膜之結晶化。因此,成膜環境中之水分量係重要之因素。 為了減低成膜環境中之水分量,較佳的是將濺鍍時之成膜環境中之水相對於惰性氣體之分壓比設為8.0×10-4~1.0×10-2進行濺鍍。真空槽之抽真空時間越長,則濺鍍時之成膜中之水分壓越減少,因此濺鍍時之成膜環境之水相對於惰性氣體之分壓比可藉由改變抽真空時間而控制。水相對於惰性氣體之分壓比只要為1.0×10-2以下,則並不阻礙鎳銅合金薄膜之結晶化而獲得耐化學品性及長期保存穩 定性良好之薄膜,且於作為血糖值感測器用電極使用之情形時變得容易獲得適宜之訊號。水相對於惰性氣體之分壓比只要為8.0×10-4以上,則即使並不特別地實施長時間之抽真空亦可調整,並不特別地需要能力較高之真空泵,比較容易經濟地實施。 If water is contained in the film formation environment at the time of sputtering, crystallization of the nickel-copper alloy film is inhibited. Therefore, the amount of water in the film forming environment is an important factor. In order to reduce the amount of water in the film forming environment, it is preferable to perform sputtering by setting the partial pressure ratio of water in the film forming environment at the time of sputtering to the inert gas to 8.0 × 10 -4 to 1.0 × 10 -2 . The longer the vacuuming time of the vacuum chamber is, the more the water pressure in the film formation during sputtering is reduced. Therefore, the partial pressure ratio of the water in the film forming environment to the inert gas during sputtering can be controlled by changing the vacuuming time. . When the partial pressure ratio of the water to the inert gas is 1.0 × 10 -2 or less, the nickel-copper alloy film is not inhibited from being crystallized, and a film having good chemical resistance and long-term storage stability is obtained, and the blood sugar value is felt. When the electrode for the detector is used, it becomes easy to obtain a suitable signal. When the partial pressure ratio of the water to the inert gas is 8.0 × 10 -4 or more, the vacuum pump can be adjusted without particularly performing a long time of vacuuming, and a vacuum pump having a high capacity is not particularly required, and it is relatively easy to economically implement. .

另外,於水相對於惰性氣體之分壓比大於1.0×10-2之情形時,氧原子比O/(Ni+Cu+O)就不會在0.05以下,自此方面考慮,亦較佳的是將水相對於惰性氣體之分壓比設為8.0×10-4~1.0×10-2進行濺鍍。 Further, when the partial pressure ratio of water to the inert gas is more than 1.0 × 10 -2 , the oxygen atom ratio O / (Ni + Cu + O) is not 0.05 or less, and from this point of view, it is also preferable. The partial pressure ratio of water to inert gas was set to 8.0 × 10 -4 to 1.0 × 10 -2 for sputtering.

為了控制成膜為塑膠膜時之水分量,理想的是實際觀測成膜時之水分量。至於在成膜環境中之水分量之控制中使用極限真空(ultimate vacuum),如以下2點所述而言並不理想。首先,第1點,若藉由濺鍍而成膜為膜,則膜受到加熱,成膜環境中之水分量增加,測量極限真空時之水分量進一步增加。 In order to control the amount of water when the film is formed into a plastic film, it is desirable to actually observe the amount of water at the time of film formation. As for the use of ultimate vacuum in the control of the moisture content in the film formation environment, it is not preferable as described in the following two points. First, at the first point, when a film is formed by sputtering, the film is heated, the amount of water in the film forming environment is increased, and the amount of water at the time of measuring the ultimate vacuum is further increased.

第2點係利用大量地投入塑膠膜之裝置之情形。於此種裝置中,以卷狀物投入膜。若使膜成為卷狀物而投入至真空槽中,則卷狀物之捲繞外側部分容易脫水,但卷狀物之捲繞內側部分難以脫水。於測量極限真空時,雖然膜卷狀物停止,但於成膜時膜卷狀物行進,因此含有較多水之卷狀物之捲繞內側部分開始捲出,因此成膜環境中之水分 量增加,測量極限真空時之水分量進一步增加。於本發明中,於控制成膜環境中之水分量時,藉由觀測濺鍍時之成膜環境之水相對於惰性氣體之分壓比而應對。 The second point is a case where a device that is heavily loaded into a plastic film is used. In such a device, a film is placed in a roll. When the film is rolled into a vacuum chamber, the outer portion of the wound of the roll is easily dehydrated, but the inner portion of the wound of the roll is difficult to be dehydrated. When the ultimate vacuum is measured, although the film roll stops, the film roll travels at the time of film formation, so that the inner portion of the wound containing a large amount of water starts to be unwound, and thus the moisture in the film forming environment As the amount increases, the amount of water at the time of measuring the ultimate vacuum is further increased. In the present invention, when controlling the amount of water in the film formation environment, it is dealt with by observing the partial pressure ratio of water in the film formation environment at the time of sputtering with respect to the inert gas.

成膜中理想的是將膜基材之溫度保持為80℃以下而於膜基材上形成鎳銅合金薄膜層。只要為80℃以下,則不會大量產生來自膜基材之水,變得比較容易使濺鍍時之成膜環境中之水相對於惰性氣體之分壓比為1.0×10-2以下而促進鎳銅合金薄膜之結晶化,因此耐化學品性及長期保存穩定性變良好,且於作為血糖值感測器用電極使用之情形時變得容易獲得適宜之訊號,從而較佳。另外,亦不會大量產生有機氣體等雜質氣體,且比較容易促進鎳銅合金薄膜之結晶化,從而較佳。 In the film formation, it is desirable to form a nickel-copper alloy thin film layer on the film substrate while maintaining the temperature of the film substrate at 80 ° C or lower. When it is 80 ° C or less, water from the film substrate is not generated in a large amount, and it is relatively easy to promote the partial pressure ratio of water in the film formation environment at the time of sputtering to the inert gas to 1.0 × 10 -2 or less. Since the nickel-copper alloy film is crystallized, the chemical resistance and the long-term storage stability are improved, and it is preferable to obtain a suitable signal when it is used as an electrode for a blood sugar level sensor. Further, it is preferable that a large amount of impurity gas such as an organic gas is generated and crystallization of the nickel-copper alloy film is relatively easily promoted.

另外,只要膜基材之溫度為80℃以下,則並不會大量產生來自膜之水,變得比較容易使濺鍍時成膜環境中之水相對於惰性氣體之分壓比為8.0×10-3以下,變得容易將O/(Ni+Cu+O)調節為0.05以下。另外,亦不會大量產生有機氣體等雜質氣體,因此於將O/(Ni+Cu+O)調節為0.05以下方面而言較佳。再者,至於成膜中之膜基材之溫度,只要成膜方法為濺鍍法,則可藉由裝置之中心輥溫度而調節,實質上即使將中心輥溫度與膜基材之溫度視為相同亦無問題。 Further, as long as the temperature of the film substrate is 80 ° C or less, water from the film is not generated in a large amount, and it becomes relatively easy to make the partial pressure ratio of water in the film forming environment to the inert gas at the time of sputtering 8.0 × 10 -3 or less, it is easy to adjust O/(Ni+Cu+O) to 0.05 or less. Further, since an impurity gas such as an organic gas is not generated in a large amount, it is preferable to adjust O/(Ni + Cu + O) to 0.05 or less. Further, as for the temperature of the film substrate in the film formation, if the film formation method is a sputtering method, it can be adjusted by the center roll temperature of the device, substantially even if the center roll temperature and the temperature of the film substrate are regarded as The same is no problem.

以上述方式所得之鎳銅合金薄膜積層膜可藉由光微影法(photolithography)等方法實施所期望之圖案化,從而較佳地作為血糖值感測器用電極膜使用。血糖值感測器用電極膜可製成與血糖值感測器裝置之種類對應之血糖值感測器用條,安裝於血糖值感測器用裝置上而使用。 The nickel-copper alloy thin film laminated film obtained in the above manner can be preferably used as an electrode film for a blood glucose sensor by performing desired patterning by a method such as photolithography. The electrode membrane for a blood sugar level sensor can be used as a blood glucose sensor strip corresponding to the type of the blood glucose sensor device, and is attached to the blood glucose sensor device for use.

[實施例] [Examples]

以下,藉由實施例對本發明加以更詳細說明,但本發明並不受該等實施例任何限定。再者,鎳銅合金薄膜積層膜之各特性可藉由下述方法而測量。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention should not be construed as limited. Further, the characteristics of the nickel-copper alloy film laminated film can be measured by the following method.

(1)X射線繞射圖案 (1) X-ray diffraction pattern

使用CuKα射線作為光源,將加速電壓設為40kV,將電流設為30mA,將測量間隔設為0.1°,藉由平面(in-plane)法測量負極活性物質薄膜之X射線繞射圖案。 Using the CuKα ray as a light source, the acceleration voltage was set to 40 kV, the current was set to 30 mA, the measurement interval was set to 0.1°, and the X-ray diffraction pattern of the negative electrode active material film was measured by an in-plane method.

(2)利用X射線光電子光譜法之深度方向之組成分析 (2) Analysis of the composition of the depth direction by X-ray photoelectron spectroscopy

將激發X射線設為AlKα射線,將輸出設為14kV、26mA,將光電子逃逸角度設為45°,將通能(pass energy)設為29.35eV,將階差(step)設為0.125eV,將真空度設為4×10-6Pa以下,將蝕刻速率設為1.9nm/min(SiO2換算),進行深度方向之組成分析。於0分鐘至3分鐘之間,間隔1分鐘而採集資料,自3分鐘後,間隔3分鐘而採集資料。 The excitation X-ray is set to AlKα ray, the output is set to 14 kV, 26 mA, the photoelectron escape angle is set to 45°, the pass energy is set to 29.35 eV, and the step is set to 0.125 eV. The degree of vacuum was set to 4 × 10 -6 Pa or less, and the etching rate was set to 1.9 nm/min (in terms of SiO 2 ), and composition analysis in the depth direction was performed. Data were collected between 0 minutes and 3 minutes with an interval of 1 minute, and data was collected from 3 minutes after 3 minutes.

(3)表面電阻值 (3) Surface resistance value

依據JIS-K7194,藉由四端子法進行測量。測量機使用三菱油化股份有限公司製造之Lotest AMCP-T400。 The measurement was performed by a four-terminal method in accordance with JIS-K7194. The measuring machine uses the Lotest AMCP-T400 manufactured by Mitsubishi Petrochemical Co., Ltd.

(4)鎳銅合金薄膜及中間層之膜厚 (4) Thickness of nickel-copper alloy film and intermediate layer

將鎳銅合金薄膜積層膜試樣片切出為1mm×10mm之大小,包埋於電子顯微鏡用環氧樹脂中。將其固定於超薄切片機(ultramicrotome)之試樣固持器(holder)上,製作與所包埋之試樣片之短邊平行的剖面薄切片。其次,於該切片之薄膜並無顯著損傷之部位,使用穿透式電子顯微鏡(日本電子股份有限公司(Japan Electron Optics Laboratory Co.,Ltd.,JEOL)製造、JEM-2010),於加速電壓為200kV、明視野(bright field)下以1萬倍之觀察倍率進行拍攝,根據所得之相片求出膜厚。 The nickel-copper alloy thin film laminated film sample piece was cut into a size of 1 mm × 10 mm, and embedded in an epoxy resin for electron microscopy. This was fixed to a sample holder of an ultramicrotome to prepare a thin slice of the section parallel to the short side of the embedded sample piece. Next, in the portion where the film of the slice was not significantly damaged, a transmission electron microscope (manufactured by Japan Electron Optics Laboratory Co., Ltd., JEOL, JEM-2010) was used, and the acceleration voltage was The film was taken at a magnification of 10,000 times at 200 kV and a bright field, and the film thickness was determined from the obtained photograph.

於基材膜與鎳銅合金薄膜之間包含鈦或鎳-鈦合金之薄膜的中間層之情形時,存在中間層與鎳銅合金薄膜之界面,中間層與鎳銅合金薄膜之對比度不同,因此可測量各自之膜厚。 In the case where the intermediate layer of the film of titanium or nickel-titanium alloy is contained between the base film and the nickel-copper alloy film, there is an interface between the intermediate layer and the nickel-copper alloy film, and the contrast between the intermediate layer and the nickel-copper alloy film is different, The respective film thicknesses can be measured.

(5)循環伏安法測量 (5) Cyclic voltammetry measurement

將鎳銅合金薄膜積層膜切出為50mm×5mm寬之短條狀。於包含5mM亞鐵氰化鉀及1M硝酸鉀之水溶液中浸漬 10mm之短條狀之鎳銅合金薄膜積層膜。參考電極之銀或氯化銀、相對電極之鉑線圈亦設置於該溶液中。於相對之銀或氯化銀中,首先將起始電壓設為+0.1V,將返回電壓設為+0.5V,將結束電壓設為+0.1V,以50mV/s之掃描速度進行測量。於該+0.1V~+0.5V之範圍中看到氧化峰值電流及還原峰值電流之情形時,將前述測量作為第1次測量,繼而第2次亦於相同條件下測量。將在+0.2V至+0.5V之間的電位觀測到氧化峰值電流與在0V至+0.3V之間的電位觀察到還原峰值電流於第1次與第2次測量實質上相同之情形,在表1中表示為○。 The nickel-copper alloy film laminate film was cut into a strip shape of 50 mm × 5 mm width. Impregnated in an aqueous solution containing 5 mM potassium ferrocyanide and 1 M potassium nitrate 10mm short strip nickel-copper alloy film laminate film. The silver or silver chloride of the reference electrode and the platinum coil of the opposite electrode are also disposed in the solution. In the case of silver or silver chloride, the initial voltage was first set to +0.1 V, the return voltage was set to +0.5 V, and the end voltage was set to +0.1 V, and the measurement was performed at a scanning speed of 50 mV/s. When the peak oxidation current and the peak current are reduced in the range of +0.1 V to +0.5 V, the above measurement is taken as the first measurement, and then the second measurement is also performed under the same conditions. Observing the potential between the oxidation peak current and the potential between 0V and +0.3V at a potential between +0.2V and +0.5V, the reduction peak current is observed to be substantially the same in the first and second measurements. Table 1 shows ○.

(6)耐化學品性(耐酸性)試驗 (6) Chemical resistance (acid resistance) test

將鎳銅合金薄膜積層膜於pH=4之鹽酸溶液中浸漬24小時。將浸漬前之電阻值設為R0,將浸漬後之表面電阻值設為R1,藉由R1/R0之值進行判定。R1/R0<1.2之範圍為良好。 The nickel-copper alloy film laminate film was immersed in a hydrochloric acid solution of pH=4 for 24 hours. The resistance value before immersion was set to R0, and the surface resistance value after immersion was set to R1, and it was judged by the value of R1/R0. The range of R1/R0 < 1.2 is good.

(7)長期保存穩定性 (7) Long-term preservation stability

將鎳銅合金薄膜積層膜於60℃/90%RH之恆溫恆濕槽中設置500小時,將設置前之表面電阻值設為R0,將設置後之表面電阻值設為R2,藉由R2/R0之值進行判定。R2/R0<1.1之範圍為良好。 The nickel-copper alloy film laminate film was set in a constant temperature and humidity chamber at 60 ° C / 90% RH for 500 hours, and the surface resistance value before the setting was set to R0, and the surface resistance value after the setting was set to R2, by R2/ The value of R0 is judged. The range of R2/R0 < 1.1 is good.

[實施例1] [Example 1]

塑膠膜使用厚度為250μm之雙軸延伸聚對苯二甲酸乙二酯系膜(E5001、東洋紡公司製造)。 As the plastic film, a biaxially stretched polyethylene terephthalate film (E5001, manufactured by Toyobo Co., Ltd.) having a thickness of 250 μm was used.

將膜投入至真空槽並抽真空。使水相對於惰性氣體之分壓比為5.0×10-3。其後,將中心輥溫度設為0℃。導入作為惰性氣體之氬而使總壓為0.15Pa,以3W/cm2之功率密度(power density)供給電力,藉由直流磁控濺鍍(DC magnetron sputtering)法形成鎳銅合金薄膜。關於膜厚,可改變膜通過靶上時之速度而控制。另外,關於濺鍍時之成膜環境之水相對於惰性氣體之分壓比,使用氣體分析裝置(英福康(INFICON)公司製造、Transpector XPR3)進行測量。 The membrane was placed in a vacuum chamber and evacuated. The partial pressure ratio of water to inert gas was 5.0 × 10 -3 . Thereafter, the center roll temperature was set to 0 °C. A argon gas as an inert gas was introduced to a total pressure of 0.15 Pa, and electric power was supplied at a power density of 3 W/cm 2 to form a nickel-copper alloy thin film by a DC magnetron sputtering method. Regarding the film thickness, it is possible to control the speed at which the film passes through the target. In addition, the partial pressure ratio of the water in the film formation environment at the time of sputtering to the inert gas was measured using a gas analyzer (manufactured by INFICON, Transpector XPR3).

圖1係實施例1之鎳銅合金薄膜積層膜之X射線繞射圖案。於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍可確認繞射峰值,結晶性高。 1 is an X-ray diffraction pattern of a nickel-copper alloy thin film laminated film of Example 1. The diffraction peaks were confirmed in three ranges of 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°, and the crystallinity was high.

圖2係表示實施例1之鎳銅合金薄膜積層膜之X射線光電子光譜法之深度分析的圖。關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.029。 Fig. 2 is a view showing the depth analysis of the nickel-copper alloy thin film laminated film of Example 1 by X-ray photoelectron spectroscopy. Regarding O/(Ni+Cu+O), the maximum value is 0.029 in the range of the nickel-copper alloy film.

圖3係實施例1之鎳銅合金薄膜積層膜之循環伏安法(CV)測量之結果。於第1次測量中,於+0.32V之電位以+0.45mA之電流值觀測到氧化峰值電流,於+0.22V之電 位以-0.31mA之電流觀測到還原峰值電流。於第2次測量中,於+0.32V之電位以+0.43mA之電流值觀測到氧化峰值電流,於+0.22V之電位以-0.34mA之電流觀測到還原峰值電流。於第1次測量中,於適宜之電位觀測到氧化峰值電流與還原峰值電流,進而第2次測量變得與第1次測量實質上相同。 Fig. 3 is a graph showing the results of cyclic voltammetry (CV) measurement of the nickel-copper alloy thin film laminated film of Example 1. In the first measurement, the peak current of oxidation was observed at a potential of +0.32 V at a potential of +0.45 mA, at a frequency of +0.22 V. The reduction peak current was observed at a current of -0.31 mA. In the second measurement, the oxidation peak current was observed at a potential of +0.32 mA at a potential of +0.32 V, and the reduction peak current was observed at a potential of +0.32 mA at a potential of +0.22 mA. In the first measurement, the oxidation peak current and the reduction peak current were observed at a suitable potential, and the second measurement was substantially the same as the first measurement.

另外,如表1所示,實施例1之鎳銅合金薄膜積層膜顯示出良好之耐酸性與長期保存穩定性。 Further, as shown in Table 1, the nickel-copper alloy thin film laminated film of Example 1 showed good acid resistance and long-term storage stability.

[實施例2] [Embodiment 2]

將水相對於惰性氣體之分壓比變更為1.0×10-3,將膜厚變更為50nm,除此以外與實施例1同樣地實施。於43°≦2θ≦45°及49°≦2θ≦52°此2個範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.021,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of the water to the inert gas was changed to 1.0 × 10 -3 and the film thickness was changed to 50 nm. The two ranges have diffraction peaks at 43°≦2θ≦45° and 49°≦2θ≦52°. Regarding O/(Ni+Cu+O), it is considered to be the range of the nickel-copper alloy film. The value was 0.021, which showed good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例3] [Example 3]

將膜厚變更為200nm,除此以外與實施例1同樣地實施。於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.025,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The film thickness was changed to 200 nm, and the same procedure as in Example 1 was carried out. The three ranges have diffraction peaks at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°. Regarding O/(Ni+Cu+O), it is indeed considered to be Among the nickel-copper alloy films, the maximum value was 0.025, which showed good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例4] [Example 4]

將鎳之含量變更為75重量%,除此以外與實施例1同樣地實施。於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍具有繞射峰值,關於氧原子比O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.021,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The same procedure as in Example 1 was carried out except that the content of nickel was changed to 75% by weight. At 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°, the three ranges have diffraction peaks, and the oxygen atom ratio O/(Ni+Cu+O) is true. It is considered to be a nickel-copper alloy film with a maximum value of 0.021, which shows good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例5] [Example 5]

將水相對於惰性氣體之分壓比變更為8.0×10-3,將鎳之含量變更為90重量%,除此以外與實施例1同樣地實施。於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.035,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of water to inert gas was changed to 8.0 × 10 -3 and the content of nickel was changed to 90% by weight. The three ranges have diffraction peaks at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°. Regarding O/(Ni+Cu+O), it is indeed considered to be Among the nickel-copper alloy films, the maximum value was 0.035, which showed good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例6] [Embodiment 6]

將膜厚變更為20nm,除此以外與實施例1同樣地實施。於43°≦2θ≦45°之範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.035,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The film thickness was changed to 20 nm, and the same procedure as in Example 1 was carried out. It has a diffraction peak in the range of 43 ° ≦ 2θ ≦ 45 °. Regarding O / (Ni + Cu + O), in the range of the nickel-copper alloy film, the maximum value is 0.035, which is evaluated by cyclic voltammetry. Good results in acid resistance and long-term storage stability.

[實施例7] [Embodiment 7]

將鎳之含量變更為75重量%,藉由濺鍍設置50nm之鈦薄膜作為中間層,除此以外與實施例1同樣地實施。於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.025,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The same procedure as in Example 1 was carried out except that the content of nickel was changed to 75% by weight, and a titanium thin film of 50 nm was provided as an intermediate layer by sputtering. The three ranges have diffraction peaks at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°. Regarding O/(Ni+Cu+O), it is indeed considered to be Among the nickel-copper alloy films, the maximum value was 0.025, which showed good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例8] [Embodiment 8]

將鎳之含量變更為75重量%,藉由濺鍍設置30nm之鎳-鈦薄膜作為中間層,除此以外與實施例1同樣地實施。 於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍具有繞射峰值,關於氧原子比O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.021,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 The same procedure as in Example 1 was carried out except that the content of nickel was changed to 75% by weight, and a nickel-titanium film of 30 nm was provided by sputtering as an intermediate layer. At 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77°, the three ranges have diffraction peaks, and the oxygen atom ratio O/(Ni+Cu+O) is true. It is considered to be a nickel-copper alloy film with a maximum value of 0.021, which shows good results in cyclic voltammetry evaluation, acid resistance, and long-term storage stability.

[實施例9] [Embodiment 9]

於188μm且於表面具有易接著層之雙軸延伸聚對苯二甲酸乙二酯系膜(A4100、東洋紡公司製造)之易接著層上,以塗膜之厚度成為3000nm之方式,藉由微凹版(micro gravure)法塗佈下述之塗佈液。 On the easy-adhesion layer of a biaxially-oriented polyethylene terephthalate film (A4100, manufactured by Toyobo Co., Ltd.) having an easy adhesion layer on the surface of 188 μm, the thickness of the coating film was 3000 nm, and the micro-gravure was used. The following coating liquid was applied by a micro gravure method.

.甲苯 30質量% . Toluene 30% by mass

.甲基乙基酮 30質量% . Methyl ethyl ketone 30% by mass

.紫外線硬化型樹脂 40質量% . UV curable resin 40% by mass

(荒川化學公司製造之BEAMSET 700、丙烯酸酯) (BEAMSET 700, acrylate manufactured by Arakawa Chemical Co., Ltd.)

.紫外線聚合起始劑 2質量% . UV polymerization initiator 2% by mass

(日本汽巴公司(Ciba Japan K.K.)製造之Irgacure 184) (Irgacure 184, manufactured by Ciba Japan K.K.)

於80℃下進行1分鐘乾燥後,使用紫外線照射裝置(EYE GRAPHICS公司製造、UB042-5AM-W型)照射紫外線(光量:300mJ/cm2)而使塗膜硬化。使水相對於惰性氣體之分壓比為8.0×10-3,濺鍍鎳為90重量%之鎳銅合金薄膜。至於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值成為0.042,於43°≦2θ≦45°及49°≦2θ≦52°此2個範圍具有繞射峰值,顯示出循環伏安法評價及耐酸性良好之結果。於長期保存穩定性中,雖然結果比其他實施例之膜稍差,但綜合而言較佳。 After drying at 80 ° C for 1 minute, the coating film was cured by irradiation with ultraviolet rays (light amount: 300 mJ/cm 2 ) using an ultraviolet irradiation device (manufactured by EYE GRAPHICS Co., Ltd., UB042-5AM-W type). A nickel-copper alloy film having a partial pressure ratio of water to an inert gas of 8.0 × 10 -3 and a nickel-plated nickel of 90% by weight was used. As for O/(Ni+Cu+O), the maximum value is 0.042 in the range of the nickel-copper alloy film, and is in the range of 43°≦2θ≦45° and 49°≦2θ≦52°. The diffraction peak shows the results of cyclic voltammetry evaluation and good acid resistance. In the long-term storage stability, although the results were slightly inferior to those of the other examples, it was preferable in general.

[實施例10] [Embodiment 10]

於188μm且於表面具有易接著層之雙軸延伸聚對苯二甲酸乙二酯系膜(A4100、東洋紡公司製造)之易接著層上,以塗膜之厚度成為3000nm之方式,藉由微凹版法塗佈與實施例9同樣之塗佈液。於80℃下進行1分鐘乾燥後,使用紫外線照射裝置(EYE GRAPHICS公司製造、UB042-5AM-W型)照射紫外線(光量:300mJ/cm2)而使塗膜硬化。使水相對於惰性氣體之分壓比為5.0×10-3,濺鍍鎳為75重量%之鎳銅合金薄膜。至於O/(Ni+Cu+O), 於確實地認為是鎳銅合金薄膜之範圍中,最大值成為0.032,於43°≦2θ≦45°、及49°≦2θ≦52°此2個範圍具有繞射峰值,關於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中,最大值為0.032,於循環伏安法評價、耐酸性、長期保存穩定性中顯示出良好之結果。 On the easy-adhesion layer of a biaxially-oriented polyethylene terephthalate film (A4100, manufactured by Toyobo Co., Ltd.) having an easy adhesion layer on the surface of 188 μm, the thickness of the coating film was 3000 nm, and the micro-gravure was used. The same coating liquid as in Example 9 was applied by the method. After drying at 80 ° C for 1 minute, the coating film was cured by irradiation with ultraviolet rays (light amount: 300 mJ/cm 2 ) using an ultraviolet irradiation device (manufactured by EYE GRAPHICS Co., Ltd., UB042-5AM-W type). A nickel-copper alloy film having a partial pressure ratio of water to an inert gas of 5.0 × 10 -3 and a nickel-plated sputtering of 75% by weight was used. As for O/(Ni+Cu+O), in the range of the nickel-copper alloy film, the maximum value is 0.032, and the range is 43°≦2θ≦45°, and 49°≦2θ≦52°. With a diffraction peak, in the range of O/(Ni+Cu+O), which is considered to be a nickel-copper alloy film, the maximum value is 0.032, which is shown in cyclic voltammetry evaluation, acid resistance, and long-term storage stability. Good results.

[比較例1] [Comparative Example 1]

將濺鍍時之成膜環境之水相對於惰性氣體之分壓比變更為1.0×10-3,將鎳變更為35重量%,除此以外與實施例1同樣地實施。鎳之含量並不適宜,因此於循環伏安法評價中並未成為適宜之結果,成為耐酸性或長期保存穩定性差之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of the water in the film formation environment at the time of the sputtering was changed to 1.0 × 10 -3 and the nickel was changed to 35% by weight. The content of nickel is not suitable, so it is not a suitable result in the evaluation of cyclic voltammetry, and it is a result of poor acid resistance or poor long-term storage stability.

[比較例2] [Comparative Example 2]

將濺鍍時之成膜環境之水相對於惰性氣體之分壓比變更為4.0×10-2,將鎳變更為65重量%,除此以外與實施例1同樣地實施。並無繞射峰值,至於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中存在大於0.05之區域,並未顯示出適宜之循環伏安法之評價結果,成為耐酸性差之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of the water in the film formation environment at the time of the sputtering was changed to 4.0 × 10 -2 and the nickel was changed to 65% by weight. There is no diffraction peak. As for O/(Ni+Cu+O), there is a region larger than 0.05 in the range of the nickel-copper alloy film. It is not a suitable cyclic voltammetry evaluation result. The result of poor acid resistance.

[比較例3] [Comparative Example 3]

將濺鍍時之成膜環境之水相對於惰性氣體之分壓比變更為4.0×10-2,將鎳變更為75重量%,除此以外與實施例 1同樣地實施。並無繞射峰值,至於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中存在大於0.05之區域,成為耐酸性差之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of the water in the film formation environment at the time of the sputtering was changed to 4.0 × 10 -2 and the nickel was changed to 75% by weight. There is no diffraction peak. As for O/(Ni+Cu+O), a region larger than 0.05 is surely considered to be a nickel-copper alloy film, which is a result of poor acid resistance.

[比較例4] [Comparative Example 4]

將濺鍍時之成膜環境之水相對於惰性氣體之分壓比變更為4.0×10-2,將鎳變更為90重量%,除此以外與實施例1同樣地實施。並無繞射峰值,至於O/(Ni+Cu+O),於確實地認為是鎳銅合金薄膜之範圍中存在大於0.05之區域,成為耐酸性差之結果。 The same procedure as in Example 1 was carried out except that the partial pressure ratio of the water in the film formation environment at the time of the sputtering was changed to 4.0 × 10 -2 and the nickel was changed to 90% by weight. There is no diffraction peak. As for O/(Ni+Cu+O), a region larger than 0.05 is surely considered to be a nickel-copper alloy film, which is a result of poor acid resistance.

[比較例5] [Comparative Example 5]

將薄膜變更為鎳鈦合金(鎳為92.5重量%),除此以外與實施例1同樣地實施。金屬之組合並不適宜,因此未顯示出適宜之循環伏安法之評價結果,成為長期保存穩定性差之結果。 The same procedure as in Example 1 was carried out except that the film was changed to a nickel-titanium alloy (nickel: 92.5 wt%). The combination of metals is not suitable, so the evaluation results of suitable cyclic voltammetry are not shown, which is a result of poor long-term storage stability.

[比較例6] [Comparative Example 6]

將薄膜變更為鎳鎢合金(鎳為81重量%),除此以外與實施例1同樣地實施。金屬之組合並不適宜,因此未顯示出適宜之循環伏安法之評價結果,成為耐酸性差之結果。 The same procedure as in Example 1 was carried out except that the film was changed to a nickel-tungsten alloy (81% by weight of nickel). The combination of metals is not suitable, so the evaluation results of the suitable cyclic voltammetry are not shown, and the result is poor acid resistance.

[產業上之可利用性] [Industrial availability]

本發明之鎳銅合金薄膜積層膜由於結晶性較高,因此耐化學品性及長期保存穩定性優異,因此可適合作為血糖值感測器用電極膜使用。 Since the nickel-copper alloy thin film laminated film of the present invention has high crystallinity and is excellent in chemical resistance and long-term storage stability, it can be suitably used as an electrode film for a blood glucose sensor.

Claims (9)

一種鎳銅合金薄膜積層膜,其係於膜基材之至少單面上直接或隔著其他層而積層有鎳銅合金薄膜之膜,鎳銅合金薄膜中之鎳的含有率為40重量%以上95重量%以下,鎳銅合金薄膜於X射線繞射圖案中,於43°≦2θ≦45°、49°≦2θ≦52°、及74°≦2θ≦77°此3個範圍中之至少1個範圍具有繞射峰值。 A nickel-copper alloy thin film laminated film which is formed by laminating a film of a nickel-copper alloy film directly on at least one surface of a film substrate or via another layer, and the nickel content in the nickel-copper alloy film is 40% by weight or more 95% by weight or less, the nickel-copper alloy film is at least 1 in the X-ray diffraction pattern at 43°≦2θ≦45°, 49°≦2θ≦52°, and 74°≦2θ≦77° The range has a diffraction peak. 如請求項1所記載之鎳銅合金薄膜積層膜,其中鎳銅合金薄膜中之氧原子數相對於鎳原子數、銅原子數及氧原子數的總和之比O/(Ni+Cu+O)為0.05以下。 The nickel-copper alloy thin film laminated film according to claim 1, wherein the ratio of the number of oxygen atoms in the nickel-copper alloy thin film to the sum of the number of nickel atoms, the number of copper atoms, and the number of oxygen atoms is O/(Ni+Cu+O) It is 0.05 or less. 如請求項1或2所記載之鎳銅合金薄膜積層膜,其中表面電阻值為300Ω/□以下。 The nickel-copper alloy thin film laminated film according to claim 1 or 2, wherein the surface resistance value is 300 Ω/□ or less. 如請求項1或2所記載之鎳銅合金薄膜積層膜,其中於膜基材與鎳銅合金薄膜之間具有中間層,中間層係鈦或鎳-鈦合金之薄膜。 The nickel-copper alloy thin film laminated film according to claim 1 or 2, wherein an intermediate layer is provided between the film substrate and the nickel-copper alloy film, and the intermediate layer is a film of titanium or a nickel-titanium alloy. 如請求項4所記載之鎳銅合金薄膜積層膜,其中鎳銅合金薄膜與中間層之膜厚之合計為10nm以上400nm以下。 The nickel-copper alloy thin film laminated film according to claim 4, wherein a total thickness of the nickel-copper alloy thin film and the intermediate layer is 10 nm or more and 400 nm or less. 如請求項1、2或5所記載之鎳銅合金薄膜積層膜,其滿足以下之必要條件:(1)於以銀或氯化銀作為參考電極的亞鐵氰化物離子之循環伏安法測量中,於+0.2V至+0.5V之間的電位顯示氧化峰值電流,於0V至+0.3V之間的電位顯示還原峰值電流; (2)於進行2次循環伏安法測量之情形時,由第2次循環伏安法測量所得之氧化峰值電流與還原峰值電流顯示與由第1次循環伏安法測量所得之氧化峰值電流與還原峰值電流實質上相同的電流。 The nickel-copper alloy thin film laminated film according to claim 1, 2 or 5, which satisfies the following requirements: (1) cyclic voltammetry measurement of ferrocyanide ions using silver or silver chloride as a reference electrode In the middle, the potential between +0.2V and +0.5V shows the peak current of oxidation, and the potential between 0V and +0.3V shows the peak current of reduction; (2) The oxidation peak current and the reduction peak current measured by the second cyclic voltammetry are shown as the oxidation peak current measured by the first cyclic voltammetry when the cyclic voltammetry measurement is performed. A current that is substantially the same as the peak current reduction. 一種血糖值感測器用電極膜,其係對構成如請求項1至6中任一項所記載之鎳銅合金薄膜積層膜的鎳銅合金薄膜實施圖案化而成。 An electrode film for a blood glucose sensor, which is obtained by patterning a nickel-copper alloy film constituting the nickel-copper alloy thin film laminated film according to any one of claims 1 to 6. 一種血糖值感測器用條,其係使用如請求項7所記載之血糖值感測器用電極膜而成。 A blood glucose sensor strip for use in an electrode film for a blood glucose sensor according to claim 7. 一種血糖值感測器裝置,其係使用如請求項8所記載之血糖值感測器用條而成。 A blood sugar level sensor device using the blood glucose sensor strip as recited in claim 8.
TW103135034A 2013-10-21 2014-10-08 Nickel-copper alloy thin-film laminated film, electrode film for blood sugar sensor, strip for blood sugar sensor and device for blood sugar sensor TWI609673B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-218309 2013-10-21
JP2013218309 2013-10-21

Publications (2)

Publication Number Publication Date
TW201519871A true TW201519871A (en) 2015-06-01
TWI609673B TWI609673B (en) 2018-01-01

Family

ID=52992721

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103135034A TWI609673B (en) 2013-10-21 2014-10-08 Nickel-copper alloy thin-film laminated film, electrode film for blood sugar sensor, strip for blood sugar sensor and device for blood sugar sensor

Country Status (3)

Country Link
JP (1) JP5904289B2 (en)
TW (1) TWI609673B (en)
WO (1) WO2015060119A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108699634A (en) * 2015-12-23 2018-10-23 美题隆公司 Nickel alloy for biosensor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102117950B1 (en) * 2018-11-08 2020-06-02 계명대학교 산학협력단 Manufacturing method of electrode for biosensor and electrode for biosensor
CN113447541A (en) 2020-03-27 2021-09-28 爱科来株式会社 Biosensor and measurement method using same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447070B2 (en) * 1992-09-17 2003-09-16 三井化学株式会社 Flexible circuit board materials
JP2010077501A (en) * 2008-09-26 2010-04-08 Kyocera Corp Nickel-copper alloy powder, method for producing the same, conductive paste and electronic component
JP2010181309A (en) * 2009-02-06 2010-08-19 Gunze Ltd Biosensor and method of manufacturing the same
JP4888604B2 (en) * 2009-10-13 2012-02-29 東洋紡績株式会社 Transparent conductive laminated film
JP2013091217A (en) * 2011-10-25 2013-05-16 Jsr Corp Transparent conductive film and touch panel
JP6149712B2 (en) * 2012-11-28 2017-06-21 住友金属鉱山株式会社 Cu wiring protective film and Cu alloy sputtering target
JP6439444B2 (en) * 2013-05-29 2018-12-19 東洋紡株式会社 Blood glucose sensor electrode film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108699634A (en) * 2015-12-23 2018-10-23 美题隆公司 Nickel alloy for biosensor

Also Published As

Publication number Publication date
JP5904289B2 (en) 2016-04-13
JPWO2015060119A1 (en) 2017-03-09
WO2015060119A1 (en) 2015-04-30
TWI609673B (en) 2018-01-01

Similar Documents

Publication Publication Date Title
Zhou et al. Microstructure and electrochemical properties of nitrogen-doped DLC films deposited by PECVD technique
TWI640421B (en) Inorganic laminated thin film
EP3512957B1 (en) Biosensor electrodes prepared by physical vapor deposition
EP3512958B1 (en) Biosensor electrodes prepared by physical vapor deposition
US20200220168A1 (en) Physical vapor deposited electrode for electrochemical sensors
TW201519871A (en) Nickel-copper alloy thin-film laminated film, electrode film for blood sugar sensor, strip for blood sugar sensor and device for blood sugar sensor
US11047037B2 (en) Conductive thin film composite
TWI662276B (en) Electrode film for blood glucose sensor
TWI775809B (en) Electrode for electrochemical sensors
US11835481B2 (en) Physical vapor deposited biosensor components
Kowalski et al. Characterization of amorphous anodic Nb2O5 nanofilm for gas sensing

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees