TW201519576A - Digital logic circuit and digital logic element - Google Patents

Digital logic circuit and digital logic element Download PDF

Info

Publication number
TW201519576A
TW201519576A TW102140725A TW102140725A TW201519576A TW 201519576 A TW201519576 A TW 201519576A TW 102140725 A TW102140725 A TW 102140725A TW 102140725 A TW102140725 A TW 102140725A TW 201519576 A TW201519576 A TW 201519576A
Authority
TW
Taiwan
Prior art keywords
transistor
directly connected
digital logic
terminal
logic circuit
Prior art date
Application number
TW102140725A
Other languages
Chinese (zh)
Inventor
Lih-Yih Chiou
Chi-Ray Huang
Bo-Zhou Ke
Original Assignee
Univ Nat Cheng Kung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Cheng Kung filed Critical Univ Nat Cheng Kung
Priority to TW102140725A priority Critical patent/TW201519576A/en
Publication of TW201519576A publication Critical patent/TW201519576A/en

Links

Landscapes

  • Logic Circuits (AREA)

Abstract

A digital logic circuit is applied the concept of Schmitt trigger and operating in sub-threshold region and near-threshold region of transistor. The second terminal of a first transistor and a second transistor of the digital logic circuit are directly connected with a operating voltage respectively. The first terminal of a third transistor is directly connected with the first terminal of the first transistor. Its second terminal is directly connected with the third terminal of the first transistor and the first terminal of the second transistor respectively. Its third terminal is electrically connected with the third terminal of the second transistor. The first terminal of a forth transistor is directly connected with the first terminal of the third transistor. Its second terminal is directly connected with the third terminal of the second transistor and electrically connected with the third terminal of the third transistor. Its third terminal is electrically connected with a ground terminal. The invention also disclosed a digital logic element.

Description

數位邏輯電路及數位邏輯元件 Digital logic circuit and digital logic component

本發明關於一種數位邏輯電路及數位邏輯元件,特別關於一種可操作於電晶體之次臨界電壓區域或近臨界電壓區域的數位邏輯電路及數位邏輯元件。 The present invention relates to a digital logic circuit and a digital logic element, and more particularly to a digital logic circuit and a digital logic element operable in a sub-threshold voltage region or a near-critical voltage region of a transistor.

隨著電子產品日益發展,應用如可攜式行動裝置、生醫電子系統,以及無線感測器等都需要低功耗設計來延長產品的使用時間。一般而言,電晶體的閘極與源極的電壓差大於或等於其臨界電壓時,電晶體才會導通,不過此時損耗功率也較高,為了降低電晶體的損耗,一種較新的技術係使用超低電壓來操作電晶體。因此,對於以低功率消耗為第一優先的應用而言,超低電壓設計為一新興且有效的方法之一。 As electronic products continue to evolve, applications such as portable mobile devices, biomedical electronic systems, and wireless sensors require low power designs to extend product life. Generally speaking, when the voltage difference between the gate and the source of the transistor is greater than or equal to its threshold voltage, the transistor will be turned on, but the power loss is also high. In order to reduce the loss of the transistor, a newer technology is used. Ultra low voltage is used to operate the transistor. Therefore, ultra low voltage design is one of the emerging and effective methods for applications where low power consumption is the first priority.

超低電壓設計係指電路操作於電晶體的次臨界電壓區域(Sub-threshold region)或是近臨界電壓區域(Near-threshold region),操作在此電壓區域可以使得電路具有較小的能源消耗以及極低的漏電流功率消耗。然而,電路要操作在此電壓附近具有相當的挑戰性,由於電晶體的過驅電壓(Overdrive Voltage)降低,導致電晶體的導通電流接近於靜態漏電流,因此電路的功能性將受到影響,尤其此影響又會因為電晶體的製程變異而加深,其中影響最大的就是電路功能的正確性。由於操作電壓趨近於臨界電壓時,因電晶體導通時的導通電流與電晶體於靜態時(即不導通時)的漏電流相當接近,使得邏輯電路不一定能夠正確地充電到邏輯1或是放電至邏輯0,造成邏輯判斷上的錯誤,使得操作於臨界電壓附近時,邏輯電路無法正確地運作。 Ultra-low voltage design means that the circuit operates in the sub-threshold region or the near-threshold region of the transistor, and operating in this voltage region can make the circuit have less energy consumption and Very low leakage current power consumption. However, it is quite challenging to operate the circuit near this voltage. As the overdrive voltage of the transistor is reduced, the on-current of the transistor is close to the static leakage current, so the functionality of the circuit will be affected, especially This effect will be deepened by the process variation of the transistor, and the most influential one is the correctness of the circuit function. Since the operating voltage approaches the threshold voltage, the on-state current when the transistor is turned on is quite close to the leakage current when the transistor is in a static state (ie, when it is not turned on), so that the logic circuit does not necessarily be correctly charged to logic 1 or Discharging to a logic 0 causes an error in the logic decision that prevents the logic circuit from functioning properly when operating near the threshold voltage.

為了能夠讓互補式邏輯(Complementary Logic)電路能夠正 確地操作在次臨界電壓區域或近臨界電壓區域,增加電晶體導通電流與靜態漏電流的比值為一首要目標,以技術上而言,增加電晶體導通電流與靜態漏電流比值可以由增加導通電流及或降低靜態漏電流來達成。 In order to enable complementary logic (Complementary Logic) circuits to be positive Indeed operating in the sub-threshold voltage region or the near-threshold voltage region, increasing the ratio of the transistor on-current to the static leakage current is a primary goal. Technically, increasing the ratio of the transistor conduction current to the static leakage current can be increased by conduction. Current is achieved and or static leakage current is reduced.

本發明之目的為提供一種可正確操作於電晶體之次臨界電壓區域或近臨界電壓區域而降低功率消耗之數位邏輯電路及數位邏輯元件。 It is an object of the present invention to provide a digital logic circuit and digital logic elements that operate correctly in a sub-threshold voltage region or a near-critical voltage region of a transistor to reduce power consumption.

為達上述目的,依據本發明之一種數位邏輯電路係應用施密特觸發器的概念,數位邏輯電路操作於電晶體之次臨界電壓區域或近臨界電壓區域,並包括一第一電晶體、一第二電晶體、一第三電晶體以及一第四電晶體。第一電晶體之第二端與一工作電壓直接連接。第二電晶體之第二端與工作電壓直接連接。第三電晶體之第一端與第一電晶體之第一端直接連接,其第二端分別與第一電晶體之第三端及第二電晶體之第一端直接連接,其第三端與第二電晶體之第三端電性連接。第四電晶體之第一端與第三電晶體之第一端直接連接,其第二端與第二電晶體之第三端直接連接,並與第三電晶體之第三端電性連接,其第三端與一接地端電性連接。 To achieve the above object, a digital logic circuit according to the present invention applies the concept of a Schmitt trigger, and the digital logic circuit operates in a sub-critical voltage region or a near-critical voltage region of the transistor, and includes a first transistor, a a second transistor, a third transistor, and a fourth transistor. The second end of the first transistor is directly connected to an operating voltage. The second end of the second transistor is directly connected to the operating voltage. The first end of the third transistor is directly connected to the first end of the first transistor, and the second end thereof is directly connected to the third end of the first transistor and the first end of the second transistor, respectively, and the third end thereof The third end of the second transistor is electrically connected. The first end of the fourth transistor is directly connected to the first end of the third transistor, the second end of the fourth transistor is directly connected to the third end of the second transistor, and is electrically connected to the third end of the third transistor. The third end is electrically connected to a ground.

為達上述目的,依據本發明之一種數位邏輯電路係應用施密特觸發器的概念,並可操作於電晶體之次臨界電壓區域或近臨界電壓區域,數位邏輯電路包括一第一電晶體、一第二電晶體、一第三電晶體以及一第四電晶體。第一電晶體之第二端與一工作電壓直接連接。第二電晶體之第二端與工作電壓直接連接。第三電晶體之第一端與第一電晶體之第一端直接連接,其第二端與第二電晶體之第一端直接連接,並與第一電晶體之第三端電性連接,其第三端與第二電晶體之第三端直接連接。第四電晶體之第一端與第三電晶體之第一端直接連接,其第二端分別與第二電晶體之第三端及第三電晶體之第三端直接連接,其第三端與一接地端直接連接。 To achieve the above object, a digital logic circuit according to the present invention applies the concept of a Schmitt trigger and can operate in a sub-critical voltage region or a near-critical voltage region of a transistor, the digital logic circuit including a first transistor, a second transistor, a third transistor, and a fourth transistor. The second end of the first transistor is directly connected to an operating voltage. The second end of the second transistor is directly connected to the operating voltage. The first end of the third transistor is directly connected to the first end of the first transistor, the second end of the third transistor is directly connected to the first end of the second transistor, and is electrically connected to the third end of the first transistor. The third end is directly connected to the third end of the second transistor. The first end of the fourth transistor is directly connected to the first end of the third transistor, and the second end thereof is directly connected to the third end of the second transistor and the third end of the third transistor, respectively, and the third end thereof Connect directly to a ground terminal.

在一實施例中,第三電晶體之第三端分別與第二電晶體之第三端及第四電晶體之第二端直接連接,第四電晶體之第三端與接地端直接連接。 In one embodiment, the third end of the third transistor is directly connected to the third end of the second transistor and the second end of the fourth transistor, and the third end of the fourth transistor is directly connected to the ground.

在一實施例中,係藉由控制第二電晶體以降低第三電晶體之漏電流。 In one embodiment, the leakage current of the third transistor is reduced by controlling the second transistor.

在一實施例中,係藉由控制第二電晶體以降低第三電晶體及第六電晶體之漏電流。 In one embodiment, the leakage current of the third transistor and the sixth transistor is reduced by controlling the second transistor.

在一實施例中,數位邏輯電路更包括一第五電晶體、一第六電晶體及一第七電晶體。第五電晶體之第二端與工作電壓直接連接,其第三端分別與第一電晶體之第三端及第三電晶體之第二端直接連接。第六電晶體之第一端與第五電晶體之第一端電性連接,其第二端與第三電晶體之第三端直接連接,其第三端分別與第二電晶體之第三端及第四電晶體之第二端直接連接。第七電晶體之第一端與第六電晶體之第一端直接連接,其第二端與第四電晶體之第三端直接連接,其第三端與接地端直接連接。 In an embodiment, the digital logic circuit further includes a fifth transistor, a sixth transistor, and a seventh transistor. The second end of the fifth transistor is directly connected to the working voltage, and the third end is directly connected to the third end of the first transistor and the second end of the third transistor, respectively. The first end of the sixth transistor is electrically connected to the first end of the fifth transistor, the second end thereof is directly connected to the third end of the third transistor, and the third end thereof is respectively connected with the third end of the second transistor The terminal and the second end of the fourth transistor are directly connected. The first end of the seventh transistor is directly connected to the first end of the sixth transistor, the second end of the seventh transistor is directly connected to the third end of the fourth transistor, and the third end is directly connected to the ground.

在一實施例中,數位邏輯電路更包括一第五電晶體、一第六電晶體及一第七電晶體。第五電晶體之第二端與第一電晶體之第三端直接連接,其第三端分別與第二電晶體之第一端及第三電晶體之第二端直接連接。第六電晶體之第一端與第五電晶體之第一端直接連接,其第二端分別與第二電晶體之第一端、第三電晶體之第二端及第五電晶體之第三端直接連接,其第三端與第二電晶體之第三端及第三電晶體之第三端直接連接。第七電晶體之第一端分別與第五電晶體之第一端及第六電晶體之第一端直接連接,其第二端分別與第二電晶體之第三端、第三電晶體之第三端及第六電晶體之第三端直接連接,其第三端與接地端直接連接。 In an embodiment, the digital logic circuit further includes a fifth transistor, a sixth transistor, and a seventh transistor. The second end of the fifth transistor is directly connected to the third end of the first transistor, and the third end is directly connected to the first end of the second transistor and the second end of the third transistor, respectively. The first end of the sixth transistor is directly connected to the first end of the fifth transistor, and the second end thereof is respectively connected to the first end of the second transistor, the second end of the third transistor, and the fifth transistor The three ends are directly connected, and the third end thereof is directly connected to the third end of the second transistor and the third end of the third transistor. The first end of the seventh transistor is directly connected to the first end of the fifth transistor and the first end of the sixth transistor, and the second end thereof is respectively connected to the third end of the second transistor and the third transistor The third end and the third end of the sixth transistor are directly connected, and the third end is directly connected to the ground.

在一實施例中,工作電壓接近於該等電晶體之臨界電壓。 In one embodiment, the operating voltage is close to the threshold voltage of the transistors.

為達上述目的,依據本發明之一種數位邏輯元件至少包含上述之數位邏輯電路。 To achieve the above object, a digital logic element in accordance with the present invention includes at least the above-described digital logic circuit.

在一實施例中,數位邏輯元件包含一及閘、一或閘、一互斥或閘、一加法器、一減法器、一乘法器、一除法器、一中央處理器、一微控制器或一數位訊號處理器。 In one embodiment, the digital logic element includes a gate, a gate, a mutex or gate, an adder, a subtractor, a multiplier, a divider, a central processing unit, a microcontroller or A digital signal processor.

承上所述,因本發明之數位邏輯電路及數位邏輯元件中,係應用施密特觸發器的概念並可操作於電晶體之次臨界電壓區域或近臨界電壓區域。其中,係藉由電晶體的連接關係使數位邏輯電路及數位邏輯元件 的輸出端影響(截斷)其靜態漏電流導通的路徑,使得靜態漏電流最小化,進而增加電晶體導通電流與靜態漏電流的比值,使得數位邏輯電路可正確且強健地充電到邏輯1。因此,本發明之數位邏輯電路及數位邏輯元件具有超低電壓操作與自我容忍製程變異的能力,並具有最小的能源消耗以及極低的漏電流功率消耗。 As described above, in the digital logic circuit and the digital logic element of the present invention, the concept of a Schmitt trigger is applied and can be operated in a sub-critical voltage region or a near-critical voltage region of the transistor. Among them, the digital logic circuit and the digital logic component are made by the connection relationship of the transistors. The output affects (cuts off) the path of its static leakage current conduction, minimizing the static leakage current, thereby increasing the ratio of the transistor conduction current to the static leakage current, so that the digital logic circuit can be correctly and robustly charged to logic 1. Therefore, the digital logic circuit and the digital logic element of the present invention have the capability of ultra-low voltage operation and self-tolerance process variation, and have minimal energy consumption and extremely low leakage current power consumption.

1、2、3‧‧‧數位邏輯電路 1, 2, 3‧‧‧ digital logic circuits

A、B‧‧‧輸入端 A, B‧‧‧ input

IOFF、IOFF1、IOFF2‧‧‧漏電流 I OFF , I OFF1 , I OFF2 ‧‧‧Leakage current

ION1、ION2、ION3‧‧‧導通電流 I ON1 , I ON2 , I ON3 ‧‧‧ conduction current

T1~T7‧‧‧電晶體 T1~T7‧‧‧O crystal

T11~T71‧‧‧第一端 T11~T71‧‧‧ first end

T12~T72‧‧‧第二端 T12~T72‧‧‧ second end

T13~T73‧‧‧第三端 T13~T73‧‧‧ third end

VDD‧‧‧工作電壓 V DD ‧‧‧ working voltage

VO‧‧‧輸出端 V O ‧‧‧ output

圖1為本發明較佳實施例之一種數位邏輯電路的電路示意圖。 1 is a circuit diagram of a digital logic circuit in accordance with a preferred embodiment of the present invention.

圖2為本發明另一較佳實施例之數位邏輯電路的電路示意圖。 2 is a circuit diagram of a digital logic circuit according to another preferred embodiment of the present invention.

圖3為本發明又一較佳實施例之數位邏輯電路的電路示意圖。 3 is a circuit diagram of a digital logic circuit according to still another preferred embodiment of the present invention.

以下將參照相關圖式,說明依本發明較佳實施例之數位邏輯電路與數位邏輯元件,其中相同的元件將以相同的參照符號加以說明。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a digital logic circuit and a digital logic element in accordance with a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.

本發明之數位邏輯電路與數位邏輯元件係應用施密特觸發器(Schmitt-Trigger)的概念,並包含複數電晶體所組成的電路。其中,數位邏輯電路與數位邏輯元件能夠強健地(Robustly)操作於次臨界電壓區域(Sub-threshold region)或近臨界電壓區域(Near-threshold region),以降低整體電路或元件的功率消耗,並使邏輯電路或元件具有超低電壓操作與自我容忍製程變異的能力。於此,電晶體操作於次臨界電壓區域或近臨界電壓區域係表示供應給電晶體的工作電壓(及或輸入電壓)係「接近」於電晶體的臨界電壓(Threshold Voltage,Vth)。其中,接近的意思是,工作電壓可等於臨界電壓,或大於一點點,或小於一點點,本領域具有通常的技術人員可充分了解其相關意義。 The digital logic circuit and the digital logic component of the present invention apply the Schmitt-Trigger concept and include a circuit composed of a plurality of transistors. Wherein, the digital logic circuit and the digital logic element can robustly operate in a Sub-threshold region or a Near-threshold region to reduce power consumption of the overall circuit or component, and Enables logic circuits or components to have ultra-low voltage operation and self-tolerance process variation. Here, the operation of the transistor in the sub-threshold voltage region or the near-critical voltage region indicates that the operating voltage (and input voltage) supplied to the transistor is "close" to the threshold voltage (Vth) of the transistor. Wherein, close proximity means that the operating voltage can be equal to the threshold voltage, or greater than a little, or less than a little, and the relevant art can be fully understood by those skilled in the art.

請參照圖1所示,其為本發明較佳實施例之一種數位邏輯電路1的電路示意圖。 Please refer to FIG. 1, which is a circuit diagram of a digital logic circuit 1 in accordance with a preferred embodiment of the present invention.

數位邏輯電路1包括一第一電晶體T1、一第二電晶體T2、一第三電晶體T3以及一第四電晶體T4。於此,數位邏輯電路1係以一反相閘(NOT Gate)為例。第一電晶體T1至第四電晶體T4係應用互補式金 屬氧化物半導體(Complementary Metal-Oxide-Semiconductor,CMOS)製程所製作。其中,第一電晶體T1為一PMOS(P-channel MOSFET),而第二電晶體T2、第三電晶體T3及第四電晶體T4分別以一NMOS(N-channel MOSFET)為例。此外,先強調的一點是,以下所謂的「直接連接」與「電性連接」不完全相同,直接連接一定是電性連接,但電性連接不一定是直接連接。其中,直接連接係表示兩者之間只單純以導電材料(例如金屬層)連接,兩者之間並不具有其它的元件(element)。而電性連接包含直接連接,表示兩者之間可以透過其它的元件連接。 The digital logic circuit 1 includes a first transistor T1, a second transistor T2, a third transistor T3, and a fourth transistor T4. Here, the digital logic circuit 1 takes an example of a NOT Gate. The first transistor T1 to the fourth transistor T4 are applied with complementary gold It is manufactured by the Complementary Metal-Oxide-Semiconductor (CMOS) process. The first transistor T1 is a PMOS (P-channel MOSFET), and the second transistor T2, the third transistor T3, and the fourth transistor T4 are respectively exemplified by an NMOS (N-channel MOSFET). In addition, the first point is that the following "direct connection" and "electrical connection" are not exactly the same, and the direct connection must be electrically connected, but the electrical connection is not necessarily a direct connection. Wherein, the direct connection means that only the conductive material (for example, a metal layer) is connected between the two, and there is no other element between the two. The electrical connection includes a direct connection, indicating that the two can be connected through other components.

如圖1所示,第一電晶體T1的第一端T11、第三電晶體T3的第一端T31及第四電晶體T4的第一端T41係直接連接,並連接至數位邏輯電路1之一輸入端A。另外,第一電晶體T1的第二端T12與一工作電壓VDD直接連接,且第二電晶體T2之第二端T22亦與工作電壓VDD直接連接。於此,工作電壓VDD為一定電壓(Constant Voltage,不等於0V),並為電晶體之操作電壓,而且第一電晶體T1的第二端T12與第二電晶體T2之第二端T22不經過其它元件而直接連接至工作電壓VDD。於此,舉一實際例子來說明工作電壓VDD及臨界電壓。以一般90奈米製程為例,NMOS或PMOS之臨界電壓例如為0.45~0.46伏特,其工作電壓例如為0.4伏特(低於臨界電壓)。 As shown in FIG. 1, the first end T11 of the first transistor T1, the first end T31 of the third transistor T3, and the first end T41 of the fourth transistor T4 are directly connected and connected to the digital logic circuit 1. An input A. In addition, the second terminal T12 of the first transistor T1 is directly connected to an operating voltage V DD , and the second terminal T22 of the second transistor T2 is also directly connected to the operating voltage V DD . Here, the operating voltage V DD is a constant voltage (not equal to 0V), and is the operating voltage of the transistor, and the second end T12 of the first transistor T1 and the second end T22 of the second transistor T2 are not Directly connected to the operating voltage V DD via other components. Here, a practical example will be given to explain the operating voltage V DD and the threshold voltage. Taking a typical 90 nm process as an example, the threshold voltage of the NMOS or PMOS is, for example, 0.45 to 0.46 volts, and the operating voltage is, for example, 0.4 volts (below the threshold voltage).

另外,第三電晶體T3之第二端T32分別與第一電晶體T1之第三端T13及第二電晶體T2之第一端T21直接連接,而第三電晶體T3之第三端T33與第二電晶體T2之第三端T23電性連接。第四電晶體T4之第二端T42與第二電晶體T2之第三端T23直接連接,並與第三電晶體T3之第三端T33電性連接,而第四電晶體T4之第三端T43與一接地端電性連接。 In addition, the second end T32 of the third transistor T3 is directly connected to the third end T13 of the first transistor T1 and the first end T21 of the second transistor T2, respectively, and the third end T33 of the third transistor T3 is The third end T23 of the second transistor T2 is electrically connected. The second end T42 of the fourth transistor T4 is directly connected to the third end T23 of the second transistor T2, and is electrically connected to the third end T33 of the third transistor T3, and the third end of the fourth transistor T4. The T43 is electrically connected to a ground.

在本實施例中,如圖1所示,第三電晶體T3之第三端T33分別與第二電晶體T2之第三端T23及第四電晶體T4之第二端T42直接連接,且第四電晶體T4之第三端T43與接地端直接連接。其中,以PMOS而言,上述之第一端即為閘極,第二端為源極,第三端汲極;以NMOS而言,上述之第一端即為閘極,第二端為汲極,第三端為源極。 In this embodiment, as shown in FIG. 1, the third end T33 of the third transistor T3 is directly connected to the third end T23 of the second transistor T2 and the second end T42 of the fourth transistor T4, respectively. The third end T43 of the fourth transistor T4 is directly connected to the ground. Wherein, in the case of PMOS, the first end is a gate, the second end is a source, and the third end is a drain; in the case of an NMOS, the first end is a gate and the second end is a gate. The pole is the source at the third end.

因此,當數位邏輯電路1之輸入端A為邏輯0(0V)時, 則第一電晶體T1(PMOS)操作的供應電流(即導通電流ION1)將由工作電壓VDD流向第一電晶體T1之第二端T12及其第三端T13(數位邏輯電路1之一輸出端VO),使得輸出端VO的電位逐漸上升至邏輯1(即上升至VDD)。當輸出端VO為邏輯1時,則第二電晶體T2(NMOS)操作的供應電流(即導通電流ION2)將由工作電壓VDD流向第二電晶體T2之第二端T22、第三端T23,最後使得第二電晶體T2之第三端T23、第三電晶體T3之第三端T33及第四電晶體T4之第二端T42的電位接近於工作電壓VDD。 因此,第三電晶體T3之第二端T32與其第三端T33的電壓差將趨近於零(理想情況下為零),且第三電晶體T3之第一端T31與其第三端T33之電壓差為負值。由於第三電晶體T3不導通(NMOS),且第三電晶體T3之第二端T32與其第三端T33的電壓差趨近於零,故第三電晶體T3之漏電流IOFF將極小化。因此,數位邏輯電路1係藉由控制第二電晶體T2而降低第三電晶體T3之漏電流。換言之,數位邏輯電路1係使輸出端VO影響(截斷)其靜態漏電流(即漏電流)導通的路徑,使得靜態漏電流最小化,進而增加電晶體導通電流與靜態漏電流的比值,使得數位邏輯電路1可正確且強健地充電到邏輯1。反之,當數位邏輯電路1之輸入端A為邏輯1(VDD)時,則第三電晶體T3與第四電晶體T4將導通,輸出端VO的電位可透過第三電晶體T3與第四電晶體T4正確地放電到邏輯0。因此,數位邏輯電路1具有超低電壓操作與自我容忍製程變異的能力,並可具有最小的能源消耗以及極低的漏電流功率消耗。 Therefore, when the input terminal A of the digital logic circuit 1 is logic 0 (0 V), the supply current of the first transistor T1 (PMOS) operation (ie, the on current I ON1 ) will flow from the operating voltage V DD to the first transistor T1. The second terminal T12 and its third terminal T13 (one output terminal V O of the digital logic circuit 1) cause the potential of the output terminal V O to gradually rise to a logic 1 (ie, rise to V DD ). When the output terminal V O is logic 1, the supply current (ie, the on current I ON2 ) of the second transistor T2 (NMOS) operation will flow from the operating voltage V DD to the second terminal T22 and the third end of the second transistor T2. T23, finally, the potential of the third terminal T23 of the second transistor T2, the third terminal T33 of the third transistor T3, and the second terminal T42 of the fourth transistor T4 is made close to the operating voltage V DD . Therefore, the voltage difference between the second terminal T32 of the third transistor T3 and its third terminal T33 will approach zero (ideally zero), and the first terminal T31 of the third transistor T3 and its third terminal T33 The voltage difference is negative. Since the third transistor T3 is not turned on (NMOS), and the voltage difference between the second terminal T32 of the third transistor T3 and the third terminal T33 thereof approaches zero, the leakage current I OFF of the third transistor T3 is minimized. . Therefore, the digital logic circuit 1 reduces the leakage current of the third transistor T3 by controlling the second transistor T2. In other words, the digital logic circuit 1 causes the output terminal V O to influence (truncate) the path through which the static leakage current (ie, the leakage current) conducts, thereby minimizing the static leakage current, thereby increasing the ratio of the transistor conduction current to the static leakage current, The digital logic circuit 1 can be correctly and robustly charged to logic 1. On the contrary, when the input terminal A of the digital logic circuit 1 is logic 1 (V DD ), the third transistor T3 and the fourth transistor T4 will be turned on, and the potential of the output terminal V O can pass through the third transistor T3 and the third The quad transistor T4 is correctly discharged to a logic zero. Therefore, the digital logic circuit 1 has the capability of ultra-low voltage operation and self-tolerance process variation, and has minimal energy consumption and extremely low leakage current power consumption.

再一提的是,與習知其它使用施密特觸發器概念並操作於次臨界電壓或近臨界電壓的NOT閘電路相較,習知之NOT閘電路係使用二個堆疊的PMOS(串聯),由於NMOS的載子遷移率較PMOS來得大,因此,在相同尺寸之下,PMOS電晶體的電流較NMOS電晶體來得小,因此堆疊的PMOS將使導通電流也變小,導致輸出端VO的充電速度變慢(電路延遲時間變長),但是,本實施例之數位邏輯電路1只使用一個PMOS,故相較於習知電路,不僅可減少整體佈局(Layout)面積,同時也可減少電路的延遲時間及功率損耗。 Furthermore, the conventional NOT gate circuit uses two stacked PMOSs (series) in comparison with other conventional NOT gate circuits that use the Schmitt trigger concept and operate at a sub-threshold voltage or a near-threshold voltage. Since the carrier mobility of the NMOS is larger than that of the PMOS, the current of the PMOS transistor is smaller than that of the NMOS transistor under the same size, so the stacked PMOS will make the on-current smaller, resulting in the output terminal V O . The charging speed becomes slower (the circuit delay time becomes longer). However, the digital logic circuit 1 of the embodiment uses only one PMOS, so that the overall layout area can be reduced and the circuit can be reduced as compared with the conventional circuit. Delay time and power loss.

另外,請參照圖2所示,其為本發明另一較佳實施例之數位邏輯電路2的電路示意圖。於此,數位邏輯電路2係以一反及閘(NAND Gate)為例。 In addition, please refer to FIG. 2, which is a circuit diagram of the digital logic circuit 2 according to another preferred embodiment of the present invention. Here, the digital logic circuit 2 is exemplified by a NAND gate.

數位邏輯電路2包括一第一電晶體T1、一第二電晶體T2、一第三電晶體T3以及一第四電晶體T4。另外,數位邏輯電路2更包括一第五電晶體T5、一第六電晶體T6及一第七電晶體T7。本實施例之第一電晶體T1至第七電晶體T7仍應用互補式金屬氧化物半導體製程所製作之電晶體。其中,第一電晶體T1、第五電晶體T5分別為PMOS,而第二電晶體T2至第四電晶體T4、第六電晶體T6及第七電晶體T7分別以NMOS為例。 The digital logic circuit 2 includes a first transistor T1, a second transistor T2, a third transistor T3, and a fourth transistor T4. In addition, the digital logic circuit 2 further includes a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7. The first to seventh transistors T1 to T7 of the present embodiment are still applied to a transistor fabricated by a complementary metal oxide semiconductor process. The first transistor T1 and the fifth transistor T5 are respectively PMOS, and the second to fourth transistors T2 to T4, the sixth transistor T6 and the seventh transistor T7 are respectively exemplified by NMOS.

第一電晶體T1的第一端T11、第三電晶體T3的第一端T31及第四電晶體T4的第一端T41係直接連接,並連接至數位邏輯電路2之一輸入端A,而第五電晶體T5的第一端T51、第六電晶體T6的第一端T61及第七電晶體T7的第一端T71係直接連接,並連接至數位邏輯電路1之一輸入端B。另外,第一電晶體T1的第二端T12與工作電壓VDD直接連接,且第二電晶體T2之第二端T22亦與工作電壓VDD直接連接。 The first end T11 of the first transistor T1, the first end T31 of the third transistor T3, and the first end T41 of the fourth transistor T4 are directly connected and connected to one input terminal A of the digital logic circuit 2, and The first end T51 of the fifth transistor T5, the first end T61 of the sixth transistor T6, and the first end T71 of the seventh transistor T7 are directly connected and connected to one input terminal B of the digital logic circuit 1. In addition, the second end T12 of the first transistor T1 is directly connected to the operating voltage V DD , and the second end T22 of the second transistor T2 is also directly connected to the operating voltage V DD .

第三電晶體T3之第二端T32分別與第一電晶體T1之第三端T13及第二電晶體T2之第一端T21直接連接,而第三電晶體T3之第三端T33與第二電晶體T2之第三端T23電性連接。另外,第四電晶體T4之第二端T42與第二電晶體T2之第三端T23直接連接,並與第三電晶體T3之第三端T33電性連接,而第四電晶體T4之第三端T43與一接地端電性連接。另外,第五電晶體T5之第二端T52與工作電壓VDD直接連接,其第三端T53分別與第一電晶體T1之第三端T13及第三電晶體T3之第二端T32直接連接。 The second end T32 of the third transistor T3 is directly connected to the third end T13 of the first transistor T1 and the first end T21 of the second transistor T2, respectively, and the third end T33 and the second end of the third transistor T3 The third end T23 of the transistor T2 is electrically connected. In addition, the second end T42 of the fourth transistor T4 is directly connected to the third end T23 of the second transistor T2, and is electrically connected to the third end T33 of the third transistor T3, and the fourth transistor T4 is The three-terminal T43 is electrically connected to a ground terminal. In addition, the second end T52 of the fifth transistor T5 is directly connected to the working voltage V DD , and the third end T53 is directly connected to the third end T13 of the first transistor T1 and the second end T32 of the third transistor T3, respectively. .

在本實施例中,如圖2所示,第三電晶體T3之第三端T33係透過第六電晶體T6而與第二電晶體T2之第三端T23電性連接,第四電晶體T4之第二端T42係透過第六電晶體T6而與第三電晶體T3之第三端T33電性連接,而第四電晶體T4之第三端T43係透過第七電晶體T7而與接地端電性連接。於此,第六電晶體T6之第二端T62與第三電晶體T3之 第三端T33直接連接,其第三端T63分別與第二電晶體T2之第三端T23及第四電晶體T4之第二端T42直接連接。另外,第七電晶體T7之第二端T72與第四電晶體T4之第三端T43直接連接,其第三端T73與接地端直接連接。 In this embodiment, as shown in FIG. 2, the third end T33 of the third transistor T3 is electrically connected to the third end T23 of the second transistor T2 through the sixth transistor T6, and the fourth transistor T4 is connected. The second end T42 is electrically connected to the third end T33 of the third transistor T3 through the sixth transistor T6, and the third end T43 of the fourth transistor T4 is transmitted through the seventh transistor T7 and the ground. Electrical connection. Here, the second end T62 of the sixth transistor T6 and the third transistor T3 The third end T33 is directly connected, and the third end T63 is directly connected to the third end T23 of the second transistor T2 and the second end T42 of the fourth transistor T4. In addition, the second end T72 of the seventh transistor T7 is directly connected to the third end T43 of the fourth transistor T4, and the third end T73 is directly connected to the ground.

因此,當數位邏輯電路2之輸入端A及輸入端B同時為邏輯0(0V)時,則第一電晶體T1操作的供應電流(即導通電流ION1)與第五電晶體T5的供應電流(即導通電流ION3)將由工作電壓VDD流向第一電晶體T1之第二端T12、第三端T13以及第五電晶體T5之第二端T52、第三端T53(數位邏輯電路2之輸出端VO),使得輸出端VO的電位逐漸上升至邏輯1(即上升至VDD)。當輸出端VO為邏輯1時,則第二電晶體T2(NMOS)操作的供應電流(即導通電流ION2)將由工作電壓VDD流向第二電晶體T2之第二端T22、第三端T23,最後使得第二電晶體T2之第三端T23、第六電晶體T6之第三端T63及第四電晶體T4之第二端T42的電位接近於工作電壓VDD。因此,第三電晶體T3之第二端T32與第六電晶體T6之第三端T63的電壓差將趨近於零(理想情況下為零),且第六電晶體T6之第一端T61與其第三端T63之電壓差為負值。由於第三電晶體T3及第六電晶體T6不導通(NMOS),且第三電晶體T3之第二端T32與第六電晶體T6之第三端T63的電壓差趨近於零,故第三電晶體T3與第六電晶體T6之漏電流IOFF將極小化。因此,數位邏輯電路2係藉由控制第二電晶體T2而降低第三電晶體T3及第六電晶體T6之漏電流。換言之,數位邏輯電路2係使輸出端VO影響(截斷)其靜態漏電流(即漏電流)導通的路徑,使得靜態漏電流最小化,進而增加電晶體導通電流與靜態漏電流的比值,使得數位邏輯電路2可正確且強健地充電到邏輯1。反之,當數位邏輯電路2之輸入端A及輸入端B為邏輯1(VDD)時,則第三電晶體T3至第七電晶體T7將被導通,輸出端VO的電位可透過第三電晶體T3至第七電晶體T7而正確地放電到邏輯0。因此,數位邏輯電路2具有超低電壓操作與自我容忍製程變異的能力,並可具有最小的能源消耗以及極低的漏電流功率消耗。 Therefore, when the input terminal A and the input terminal B of the digital logic circuit 2 are simultaneously logic 0 (0 V), the supply current (ie, the on current I ON1 ) of the first transistor T1 and the supply current of the fifth transistor T5 are supplied. (ie, the on current I ON3 ) will flow from the operating voltage V DD to the second terminal T12 of the first transistor T1, the third terminal T13, and the second terminal T52 and the third terminal T53 of the fifth transistor T5 (the digital logic circuit 2) The output terminal V O ) causes the potential of the output terminal V O to gradually rise to a logic 1 (ie, rise to V DD ). When the output terminal V O is logic 1, the supply current (ie, the on current I ON2 ) of the second transistor T2 (NMOS) operation will flow from the operating voltage V DD to the second terminal T22 and the third end of the second transistor T2. T23, finally, the potential of the third terminal T23 of the second transistor T2, the third terminal T63 of the sixth transistor T6, and the second terminal T42 of the fourth transistor T4 is made close to the operating voltage V DD . Therefore, the voltage difference between the second terminal T32 of the third transistor T3 and the third terminal T63 of the sixth transistor T6 will approach zero (ideally zero), and the first terminal T61 of the sixth transistor T6 The voltage difference from its third terminal T63 is negative. Since the third transistor T3 and the sixth transistor T6 are not turned on (NMOS), and the voltage difference between the second terminal T32 of the third transistor T3 and the third terminal T63 of the sixth transistor T6 approaches zero, The leakage current I OFF of the three transistor T3 and the sixth transistor T6 will be minimized. Therefore, the digital logic circuit 2 reduces the leakage currents of the third transistor T3 and the sixth transistor T6 by controlling the second transistor T2. In other words, the digital logic circuit 2 causes the output terminal V O to influence (truncate) the path through which the static leakage current (ie, the leakage current) conducts, thereby minimizing the static leakage current, thereby increasing the ratio of the transistor conduction current to the static leakage current, The digital logic circuit 2 can be correctly and robustly charged to logic 1. On the contrary, when the input terminal A and the input terminal B of the digital logic circuit 2 are logic 1 (V DD ), the third to seventh transistors T3 to T7 will be turned on, and the potential of the output terminal V O can pass through the third. The transistor T3 to the seventh transistor T7 are correctly discharged to a logic 0. Therefore, the digital logic circuit 2 has the capability of ultra-low voltage operation and self-tolerance process variation, and has minimal energy consumption and extremely low leakage current power consumption.

再一提的是,與習知其它使用施密特觸發器概念並操作於次 臨界電壓或近臨界電壓的NAND閘電路相較,習知之NAND閘電路係使用二組各二個堆疊的PMOS(串聯),由於NMOS的載子遷移率較PMOS來得大,因此,在相同尺寸之下,PMOS電晶體的電流較NMOS電晶體來得小,因此堆疊PMOS將使導通電流變小(因堆疊電晶體將會因為其基底偏壓效應(body bias effect)的影響,使得電晶體的臨界電壓變大,電晶體的導通電流進而變小,但因為PMOS本身的電流就比較小,因此堆疊的現象將使得導通電流更小,不利於充電,而且使得延遲時間變得更長),導致輸出端的充電速度變慢(電路延遲時間變長),但是,本實施例之數位邏輯電路2只使用二組各一個PMOS,故相較於習知電路,不僅可減少整體佈局(Layout)面積,同時也可減少電路的延遲時間及功率損耗。 It is also mentioned that the Schmitt trigger concept is used and operated in other times. Compared with the NAND gate circuit of the threshold voltage or the near-threshold voltage, the conventional NAND gate circuit uses two sets of two stacked PMOSs (series). Since the carrier mobility of the NMOS is larger than that of the PMOS, it is in the same size. The current of the PMOS transistor is smaller than that of the NMOS transistor, so stacking the PMOS will make the on-current smaller (because the stacked transistor will have the threshold voltage of the transistor due to its influence of the body bias effect). When it becomes larger, the on-current of the transistor is further reduced, but since the current of the PMOS itself is relatively small, the phenomenon of stacking will make the on-current smaller, which is disadvantageous for charging, and the delay time becomes longer, resulting in the output end. The charging speed is slower (the circuit delay time becomes longer). However, the digital logic circuit 2 of the embodiment uses only two groups of one PMOS, so that the overall layout (Layout) area can be reduced compared with the conventional circuit. It can reduce the delay time and power loss of the circuit.

另外,請參照圖3所示,其為本發明又一較佳實施例之數位邏輯電路3的電路示意圖。於此,數位邏輯電路3係以一反或閘(NOR Gate)為例。 In addition, please refer to FIG. 3, which is a circuit diagram of the digital logic circuit 3 according to still another preferred embodiment of the present invention. Here, the digital logic circuit 3 is exemplified by a NOR Gate.

數位邏輯電路3包括一第一電晶體T1、一第二電晶體T2、一第三電晶體T3以及一第四電晶體T4。另外,數位邏輯電路3更包括一第五電晶體T5、一第六電晶體T6及一第七電晶體T7。本實施例之第一電晶體T1至第七電晶體T7仍應用互補式金屬氧化物半導體製程所製作之電晶體。其中,第一電晶體T1、第五電晶體T5分別為PMOS,而第二電晶體T2至第四電晶體T4、第六電晶體T6及第七電晶體T7分別以NMOS為例。 The digital logic circuit 3 includes a first transistor T1, a second transistor T2, a third transistor T3, and a fourth transistor T4. In addition, the digital logic circuit 3 further includes a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7. The first to seventh transistors T1 to T7 of the present embodiment are still applied to a transistor fabricated by a complementary metal oxide semiconductor process. The first transistor T1 and the fifth transistor T5 are respectively PMOS, and the second to fourth transistors T2 to T4, the sixth transistor T6 and the seventh transistor T7 are respectively exemplified by NMOS.

第一電晶體T1的第一端T11、第三電晶體T3的第一端T31及第四電晶體T4的第一端T41係直接連接,並連接至數位邏輯電路3之一輸入端A,而第五電晶體T5的第一端T51、第六電晶體T6的第一端T61及第七電晶體T7的第一端T71係直接連接,並連接至數位邏輯電路1之一輸入端B。另外,第一電晶體T1的第二端T12與工作電壓VDD直接連接,且第二電晶體T2之第二端T22亦與工作電壓VDD直接連接。 The first end T11 of the first transistor T1, the first end T31 of the third transistor T3, and the first end T41 of the fourth transistor T4 are directly connected and connected to one input terminal A of the digital logic circuit 3, and The first end T51 of the fifth transistor T5, the first end T61 of the sixth transistor T6, and the first end T71 of the seventh transistor T7 are directly connected and connected to one input terminal B of the digital logic circuit 1. In addition, the second end T12 of the first transistor T1 is directly connected to the operating voltage V DD , and the second end T22 of the second transistor T2 is also directly connected to the operating voltage V DD .

第三電晶體T3之第二端T32與第二電晶體T2之第一端T21直接連接,並與第一電晶體T1之第三端T13電性連接,第三電晶體T3之第三端T33與第二電晶體T2之第三端T23直接連接。在本實施例中,第三 電晶體T3之第二端T32係透過第五電晶體T5而與第一電晶體T1之第三端T13電性連接。其中,第五電晶體T5之第二端T52與第一電晶體T1之第三端T13直接連接,第五電晶體T5之第三端T53分別與第二電晶體T2之第一端T21及第三電晶體T3之第二端T32直接連接。 The second end T32 of the third transistor T3 is directly connected to the first end T21 of the second transistor T2, and is electrically connected to the third end T13 of the first transistor T1, and the third end T33 of the third transistor T3. It is directly connected to the third end T23 of the second transistor T2. In this embodiment, the third The second end T32 of the transistor T3 is electrically connected to the third end T13 of the first transistor T1 through the fifth transistor T5. The second end T52 of the fifth transistor T5 is directly connected to the third end T13 of the first transistor T1, and the third end T53 of the fifth transistor T5 and the first end T21 of the second transistor T2 are respectively The second end T32 of the tri-crystal T3 is directly connected.

另外,第四電晶體T4之第二端T42分別與第二電晶體T2之第三端T23及第三電晶體T3之第三端T33直接連接,第四電晶體T4之第三端T43與接地端直接連接。 In addition, the second end T42 of the fourth transistor T4 is directly connected to the third end T23 of the second transistor T2 and the third end T33 of the third transistor T3, and the third end T43 of the fourth transistor T4 is grounded. The terminal is directly connected.

第六電晶體T6之第二端T62分別與第二電晶體T2之第一端T21、第三電晶體T3之第二端T32及第五電晶體T5之第三端T53直接連接,而第六電晶體T6之第三端T63與第二電晶體T2之第三端T23及第三電晶體T3之第三端T33直接連接。 The second end T62 of the sixth transistor T6 is directly connected to the first end T21 of the second transistor T2, the second end T32 of the third transistor T3, and the third end T53 of the fifth transistor T5, respectively. The third end T63 of the transistor T6 is directly connected to the third end T23 of the second transistor T2 and the third end T33 of the third transistor T3.

另外,第七電晶體T7之第一端T71分別與第五電晶體T5之第一端T51及第六電晶體T6之第一端T61直接連接,第七電晶體T7之第二端T72分別與第二電晶體T2之第三端T23、第三電晶體T3之第三端T33及第六電晶體T6之第三端T63直接連接,而第七電晶體T7之第三端T73與接地端直接連接。 In addition, the first end T71 of the seventh transistor T7 is directly connected to the first end T51 of the fifth transistor T5 and the first end T61 of the sixth transistor T6, respectively, and the second end T72 of the seventh transistor T7 is respectively The third end T23 of the second transistor T2, the third end T33 of the third transistor T3, and the third end T63 of the sixth transistor T6 are directly connected, and the third end T73 of the seventh transistor T7 is directly connected to the ground. connection.

因此,當數位邏輯電路3之輸入端A及輸入端B同時為邏輯0(0V)時,則第一電晶體T1及第五電晶體T5(PMOS)操作的供應電流(即導通電流ION1)將由工作電壓VDD流向第一電晶體T1之第二端T12、第三端T13,並流向第五電晶體T5之第二端52及其第三端T53(數位邏輯電路3之輸出端VO),使得輸出端VO的電位逐漸上升至邏輯1(即上升至VDD)。當輸出端VO為邏輯1時,則第二電晶體T2(NMOS)操作的供應電流(即導通電流ION2)將由工作電壓VDD流向第二電晶體T2之第二端T22、第三端T23,最後使得第二電晶體T2之第三端T23、第三電晶體T3之第三端T33及第六電晶體T6之第三端T63的電位接近於工作電壓VDD。因此,第三電晶體T3之第二端T32與其第三端T33、第六電晶體T6之第二端T62與其第三端T63的電壓差將分別趨近於零(理想情況下為零),且第三電晶體T3之第一端T31與其第三端T33、第六電晶體T6之第一端T61與其第三端T63之電壓差均為負值。由於第三電晶體T3及第六電晶體T6 不導通(NMOS),且第三電晶體T3之第二端T32及其第三端T33的電壓差趨近於零、第六電晶體T6之第二端T62及其第三端T63的電壓差亦趨近於零,故第三電晶體T3之漏電流IOFF1將極小化,且第六電晶體T6之漏電流IOFF2將極小化。因此,數位邏輯電路3係藉由控制第二電晶體T2而降低第三電晶體T3及第六電晶體T6之漏電流。換言之,數位邏輯電路3係使輸出端VO影響(截斷)其靜態漏電流(即漏電流)導通的路徑,使得靜態漏電流最小化,進而增加電晶體導通電流與靜態漏電流的比值,使得數位邏輯電路3可正確且強健地充電到邏輯1。反之,當數位邏輯電路3之輸入端A及或輸入端B為邏輯1(VDD)時,則第三電晶體T3、第四電晶體T4及或第六電晶體T6、第七電晶體T7將導通,輸出端VO的電位可透過第三電晶體T3、第四電晶體T4及或第六電晶體T6、第七電晶體T7正確地放電到邏輯0。因此,數位邏輯電路3具有超低電壓操作與自我容忍製程變異的能力,並可具有最小的能源消耗以及極低的漏電流功率消耗。 Therefore, when the input terminal A and the input terminal B of the digital logic circuit 3 are simultaneously logic 0 (0 V), the supply current of the first transistor T1 and the fifth transistor T5 (PMOS) is operated (ie, the on current I ON1 ) Flowing from the operating voltage V DD to the second terminal T12 and the third terminal T13 of the first transistor T1, and to the second terminal 52 of the fifth transistor T5 and the third terminal T53 thereof (the output terminal of the digital logic circuit 3 V O ) ), so that the potential of the output terminal V O gradually rises to a logic 1 (ie, rises to V DD ). When the output terminal V O is logic 1, the supply current (ie, the on current I ON2 ) of the second transistor T2 (NMOS) operation will flow from the operating voltage V DD to the second terminal T22 and the third end of the second transistor T2. T23, finally, the potential of the third terminal T23 of the second transistor T2, the third terminal T33 of the third transistor T3, and the third terminal T63 of the sixth transistor T6 is made close to the operating voltage V DD . Therefore, the voltage difference between the second end T32 of the third transistor T3 and the third end T33, the second end T62 of the sixth transistor T6 and the third end T63 thereof will respectively approach zero (ideally zero). The voltage difference between the first end T31 of the third transistor T3 and the third end T33, the first end T61 of the sixth transistor T6 and the third end T63 thereof is a negative value. The third transistor T3 and the sixth transistor T6 are not turned on (NMOS), and the voltage difference between the second terminal T32 of the third transistor T3 and the third terminal T33 thereof is close to zero, and the sixth transistor T6 is The voltage difference between the two terminals T62 and the third terminal T63 also approaches zero, so the leakage current I OFF1 of the third transistor T3 will be minimized, and the leakage current I OFF2 of the sixth transistor T6 will be minimized. Therefore, the digital logic circuit 3 reduces the leakage currents of the third transistor T3 and the sixth transistor T6 by controlling the second transistor T2. In other words, the digital logic circuit 3 causes the output terminal V O to influence (cut off) the path through which the static leakage current (ie, the leakage current) conducts, thereby minimizing the static leakage current, thereby increasing the ratio of the transistor conduction current to the static leakage current, The digital logic circuit 3 can be charged to logic 1 correctly and robustly. On the other hand, when the input terminal A or the input terminal B of the digital logic circuit 3 is logic 1 (V DD ), then the third transistor T3, the fourth transistor T4 and/or the sixth transistor T6, and the seventh transistor T7 Turning on, the potential of the output terminal V O can be correctly discharged to the logic 0 through the third transistor T3, the fourth transistor T4, or the sixth transistor T6, and the seventh transistor T7. Therefore, the digital logic circuit 3 has the capability of ultra-low voltage operation and self-tolerance process variation, and has minimal energy consumption and extremely low leakage current power consumption.

再一提的是,與習知其它使用施密特觸發器概念並操作於次臨界電壓或近臨界電壓的NOR閘電路相較,習知之NOR閘電路係使用四個堆疊的PMOS(串聯),由於NMOS的載子遷移率較PMOS來得大,因此,在相同尺寸之下,PMOS電晶體的電流較NMOS電晶體來得小,因此四個堆疊PMOS將使其導通電流變小,導致輸出端的充電速度變慢(電路延遲時間變長),但是,本實施例之數位邏輯電路3只使用二個堆疊的PMOS,故相較於習知電路,不僅可減少整體佈局面積,同時也可減少電路的延遲時間及功率損耗。 Furthermore, the conventional NOR gate circuit uses four stacked PMOSs (series) in comparison with other conventional NOR gate circuits that use the Schmitt trigger concept and operate at sub-threshold voltage or near-threshold voltage. Since the carrier mobility of the NMOS is larger than that of the PMOS, the current of the PMOS transistor is smaller than that of the NMOS transistor under the same size, so the four stacked PMOSs will make the conduction current smaller, resulting in the charging speed of the output terminal. Slower (the circuit delay time becomes longer), however, the digital logic circuit 3 of the present embodiment uses only two stacked PMOSs, so that the overall layout area can be reduced and the delay of the circuit can be reduced as compared with the conventional circuit. Time and power loss.

另外,藉由上述的數位邏輯電路1、2、3,並透過例如邏輯合成器(Logic Synthesizer),就可依使用者所提供的欲合成邏輯閘之布林函數以及合成條件限制,自動建構符合條件限制的其它邏輯閘電路,以形成其它的數位邏輯電路或數位邏輯元件(digital logic element)。例如以NOR閘就可合成AND閘或OR閘,或者以NAND閘來合成其它的邏輯電路,…。因此,本發明之數位邏輯元件可透過邏輯合成器來合成,並可包含上述任何一個數位邏輯電路(1、2、3)。其中,數位邏輯元件可例如但不限為一及閘(AND Gate)、一或閘(OR Gate)、一互斥或閘(XOR Gare)、一加法 器、一減法器、一乘法器、一除法器、一中央處理器(CPU)、一微控制器(Micro Controller)或一數位訊號處理器(DSP)、…,於此並不限制。由於數位邏輯電路(1、2、3)可強健地操作於次臨界電壓區域或近臨界電壓區域,以降低整體電路的功率消耗,並使邏輯電路具有超低電壓操作與自我容忍製程變異的能力,故合成後的數位邏輯元件同樣具有上述的優點。 In addition, by the above-mentioned digital logic circuits 1, 2, 3, and through, for example, a logic synthesizer, the Boolean function and the synthesis condition limit of the logic gate to be synthesized by the user can be automatically constructed to meet the requirements. Other logic gate circuits that are conditionally limited to form other digital logic circuits or digital logic elements. For example, a NO gate can be used to synthesize an AND gate or an OR gate, or a NAND gate can be used to synthesize other logic circuits, .... Thus, the digital logic elements of the present invention can be synthesized by a logic synthesizer and can include any of the above-described digital logic circuits (1, 2, 3). The digital logic component can be, for example but not limited to, an AND gate, an OR gate, a mutual exclusion or gate (XOR Gare), and an addition. , a subtractor, a multiplier, a divider, a central processing unit (CPU), a microcontroller (Micro Controller) or a digital signal processor (DSP), ... are not limited herein. Since the digital logic circuits (1, 2, 3) can operate robustly in the sub-threshold voltage region or near-critical voltage region to reduce the power consumption of the overall circuit and enable the logic circuit to have ultra-low voltage operation and self-tolerance process variation. Therefore, the synthesized digital logic elements also have the above advantages.

綜上所述,因本發明之數位邏輯電路及數位邏輯元件中,係應用施密特觸發器的概念並可操作於電晶體之次臨界電壓區域或近臨界電壓區域。其中,係藉由電晶體的連接關係使數位邏輯電路及數位邏輯元件的輸出端影響(截斷)其靜態漏電流導通的路徑,使得靜態漏電流最小化,進而增加電晶體導通電流與靜態漏電流的比值,使得數位邏輯電路可正確且強健地充電到邏輯1。因此,本發明之數位邏輯電路及數位邏輯元件具有超低電壓操作與自我容忍製程變異的能力,並具有最小的能源消耗以及極低的漏電流功率消耗。 In summary, in the digital logic circuit and the digital logic component of the present invention, the concept of a Schmitt trigger is applied and can be operated in a sub-critical voltage region or a near-critical voltage region of the transistor. Among them, the connection between the digital logic circuit and the digital logic element affects (cuts off) the path of the static leakage current conduction by the connection relationship of the transistor, thereby minimizing the static leakage current, thereby increasing the transistor conduction current and the static leakage current. The ratio allows the digital logic to be correctly and robustly charged to logic 1. Therefore, the digital logic circuit and the digital logic element of the present invention have the capability of ultra-low voltage operation and self-tolerance process variation, and have minimal energy consumption and extremely low leakage current power consumption.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。 The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

1‧‧‧數位邏輯電路 1‧‧‧Digital logic circuit

A‧‧‧輸入端 A‧‧‧ input

IOFF‧‧‧漏電流 I OFF ‧‧‧Leakage current

ION1、ION2‧‧‧導通電流 I ON1 , I ON2 ‧‧‧ conduction current

T1~T4‧‧‧電晶體 T1~T4‧‧‧O crystal

T11~T41‧‧‧第一端 T11~T41‧‧‧ first end

T12~T42‧‧‧第二端 T12~T42‧‧‧ second end

T13~T43‧‧‧第三端 T13~T43‧‧‧ third end

VDD‧‧‧工作電壓 V DD ‧‧‧ working voltage

VO‧‧‧輸出端 V O ‧‧‧ output

Claims (10)

一種數位邏輯電路,係應用施密特觸發器的概念,該數位邏輯電路係操作於電晶體之次臨界電壓區域或近臨界電壓區域,並包括:一第一電晶體,其第二端與一工作電壓直接連接;一第二電晶體,其第二端與該工作電壓直接連接;一第三電晶體,其第一端與該第一電晶體之第一端直接連接,其第二端分別與該第一電晶體之第三端及該第二電晶體之第一端直接連接,其第三端與該第二電晶體之第三端電性連接;以及一第四電晶體,其第一端與該第三電晶體之第一端直接連接,其第二端與該第二電晶體之第三端直接連接,並與該第三電晶體之第三端電性連接,其第三端與一接地端電性連接。 A digital logic circuit is a concept of applying a Schmitt trigger circuit, which is operated in a sub-critical voltage region or a near-critical voltage region of a transistor, and includes: a first transistor, a second end thereof and a first The working voltage is directly connected; a second transistor has a second end directly connected to the working voltage; and a third transistor has a first end directly connected to the first end of the first transistor, and a second end thereof Directly connected to the third end of the first transistor and the first end of the second transistor, the third end of which is electrically connected to the third end of the second transistor; and a fourth transistor, the first One end is directly connected to the first end of the third transistor, the second end is directly connected to the third end of the second transistor, and is electrically connected to the third end of the third transistor, and the third The terminal is electrically connected to a ground. 如申請專利範圍第1項所述之數位邏輯電路,其中該第三電晶體之第三端分別與該第二電晶體之第三端及該第四電晶體之第二端直接連接,該第四電晶體之第三端與該接地端直接連接。 The digital logic circuit of claim 1, wherein the third end of the third transistor is directly connected to the third end of the second transistor and the second end of the fourth transistor, respectively. The third end of the fourth transistor is directly connected to the ground. 如申請專利範圍第2項所述之數位邏輯電路,其中係藉由控制該第二電晶體以降低該第三電晶體之漏電流。 The digital logic circuit of claim 2, wherein the leakage current of the third transistor is reduced by controlling the second transistor. 如申請專利範圍第1項所述之數位邏輯電路,更包括:一第五電晶體,其第二端與該工作電壓直接連接,其第三端分別與該第一電晶體之第三端及該第三電晶體之第二端直接連接;一第六電晶體,其第一端與該第五電晶體之第一端電性連接,其第二端與該第三電晶體之第三端直接連接,其第三端分別與該第二電晶體之第三端及該第四電晶體之第二端直接連接;及一第七電晶體,其第一端與該第六電晶體之第一端直接連接,其第二端與該第四電晶體之第三端直接連接,其第三端與該接地端直接連接。 The digital logic circuit of claim 1, further comprising: a fifth transistor, wherein the second end is directly connected to the working voltage, and the third end is respectively connected to the third end of the first transistor; The second end of the third transistor is directly connected; a sixth transistor is electrically connected to the first end of the fifth transistor, and the second end is connected to the third end of the third transistor Directly connected, the third end of which is directly connected to the third end of the second transistor and the second end of the fourth transistor; and a seventh transistor, the first end thereof and the sixth transistor One end is directly connected, and the second end is directly connected to the third end of the fourth transistor, and the third end is directly connected to the ground end. 一種數位邏輯電路,係應用施密特觸發器的概念,並可操作於電晶體之次臨界電壓區域或近臨界電壓區域,該數位邏輯電路包括:一第一電晶體,其第二端與一工作電壓直接連接;一第二電晶體,其第二端與該工作電壓直接連接;一第三電晶體,其第一端與該第一電晶體之第一端直接連接,其第二端 與該第二電晶體之第一端直接連接,並與該第一電晶體之第三端電性連接,其第三端與該第二電晶體之第三端直接連接;以及一第四電晶體,其第一端與該第三電晶體之第一端直接連接,其第二端分別與該第二電晶體之第三端及該第三電晶體之第三端直接連接,其第三端與一接地端直接連接。 A digital logic circuit is applied to the concept of a Schmitt trigger and is operable in a sub-critical voltage region or a near-critical voltage region of a transistor, the digital logic circuit comprising: a first transistor, a second end thereof and a first The working voltage is directly connected; a second transistor has a second end directly connected to the working voltage; a third transistor has a first end directly connected to the first end of the first transistor, and a second end Directly connected to the first end of the second transistor, and electrically connected to the third end of the first transistor, the third end of which is directly connected to the third end of the second transistor; and a fourth a first end of the crystal is directly connected to the first end of the third transistor, and a second end thereof is directly connected to the third end of the second transistor and the third end of the third transistor, respectively. The terminal is directly connected to a ground. 如申請專利範圍第5項所述之數位邏輯電路,更包括:一第五電晶體,其第二端與該第一電晶體之第三端直接連接,其第三端分別與第二電晶體之第一端及該第三電晶體之第二端直接連接;一第六電晶體,其第一端與該第五電晶體之第一端直接連接,其第二端分別與該第二電晶體之第一端、該第三電晶體之第二端及該第五電晶體之第三端直接連接,其第三端與該第二電晶體之第三端及該第三電晶體之第三端直接連接;及一第七電晶體,其第一端分別與該第五電晶體之第一端及該第六電晶體之第一端直接連接,其第二端分別與該第二電晶體之第三端、該第三電晶體之第三端及該第六電晶體之第三端直接連接,其第三端與該接地端直接連接。 The digital logic circuit of claim 5, further comprising: a fifth transistor, wherein the second end is directly connected to the third end of the first transistor, and the third end is respectively connected to the second transistor The first end is directly connected to the second end of the third transistor; a sixth transistor is directly connected to the first end of the fifth transistor, and the second end is respectively connected to the second end The first end of the crystal, the second end of the third transistor, and the third end of the fifth transistor are directly connected, and the third end thereof and the third end of the second transistor and the third transistor a three-terminal direct connection; and a seventh transistor, wherein the first end is directly connected to the first end of the fifth transistor and the first end of the sixth transistor, and the second end is respectively connected to the second end The third end of the crystal, the third end of the third transistor and the third end of the sixth transistor are directly connected, and the third end thereof is directly connected to the ground. 如申請專利範圍第4項或第6項所述之數位邏輯電路,其中係藉由控制該第二電晶體以降低該第三電晶體及該第六電晶體之漏電流。 The digital logic circuit of claim 4 or 6, wherein the leakage current of the third transistor and the sixth transistor is reduced by controlling the second transistor. 如申請專利範圍第1項或第5項所述之數位邏輯電路,其中該工作電壓接近於該等電晶體之臨界電壓。 The digital logic circuit of claim 1 or 5, wherein the operating voltage is close to a threshold voltage of the transistors. 一種數位邏輯元件,其至少包含申請專利範圍第1項至第8項的其中一項所述之數位邏輯電路。 A digital logic element comprising at least one of the digital logic circuits of one of claims 1 to 8. 如申請專利範圍第9項所述之數位邏輯元件,其係包含一及閘、一或閘、一互斥或閘、一加法器、一減法器、一乘法器、一除法器、一中央處理器、一微控制器或一數位訊號處理器。 The digital logic component of claim 9 includes a gate, a gate, a mutex or gate, an adder, a subtractor, a multiplier, a divider, and a central processing. , a microcontroller or a digital signal processor.
TW102140725A 2013-11-08 2013-11-08 Digital logic circuit and digital logic element TW201519576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102140725A TW201519576A (en) 2013-11-08 2013-11-08 Digital logic circuit and digital logic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102140725A TW201519576A (en) 2013-11-08 2013-11-08 Digital logic circuit and digital logic element

Publications (1)

Publication Number Publication Date
TW201519576A true TW201519576A (en) 2015-05-16

Family

ID=53721097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140725A TW201519576A (en) 2013-11-08 2013-11-08 Digital logic circuit and digital logic element

Country Status (1)

Country Link
TW (1) TW201519576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688950B (en) * 2017-05-04 2020-03-21 湯朝景 Random-access memory and associated circuit, method and device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688950B (en) * 2017-05-04 2020-03-21 湯朝景 Random-access memory and associated circuit, method and device

Similar Documents

Publication Publication Date Title
US9543931B2 (en) Low-voltage to high-voltage level shifter circuit
US11119522B2 (en) Substrate bias generating circuit
US9948283B2 (en) Semiconductor device
US10200038B2 (en) Bootstrapping circuit and unipolar logic circuits using the same
US8803591B1 (en) MOS transistor with forward bulk-biasing circuit
TW201519576A (en) Digital logic circuit and digital logic element
US8283947B1 (en) High voltage tolerant bus holder circuit and method of operating the circuit
US20100060338A1 (en) Level shifter with reduced leakage
TWI641219B (en) Power-on control circuit and input/output control circuit
US9692415B2 (en) Semiconductor device having low power consumption
WO2019032419A1 (en) Low-voltage crystal oscillator circuit compatible with gpio
US8963583B2 (en) Voltage level converter and RF switching driver apparatus using the same
JP5570973B2 (en) Integrated circuit, apparatus and method for powering down an analog circuit
US9660529B2 (en) Transistor circuit of low shutoff-state current
US8497725B2 (en) Active pull-up/pull-down circuit
US8723581B1 (en) Input buffers
CN110429922B (en) Trigger device
WO2012045874A1 (en) Complementary logic circuits with self-adaptive body bias
WO2018004800A1 (en) Stacked switch circuit having shoot through current protection
JP2006148640A (en) Switching circuit
CN106874231B (en) Bus retainer and electronic device
TW498617B (en) Fast switching input buffer
TWI434513B (en) Current mirror modified level shifter
JP2023018810A (en) Semiconductor device
JP2002280892A (en) Semiconductor integrated circuit