TW201518557A - Trivalent chromium plating bath - Google Patents

Trivalent chromium plating bath Download PDF

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TW201518557A
TW201518557A TW103129332A TW103129332A TW201518557A TW 201518557 A TW201518557 A TW 201518557A TW 103129332 A TW103129332 A TW 103129332A TW 103129332 A TW103129332 A TW 103129332A TW 201518557 A TW201518557 A TW 201518557A
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trivalent chromium
plating bath
plating
chromium plating
compound
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TW103129332A
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TWI546422B (en
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Katsuyuki Nakajima
Shingo Nagamine
Junichi Katayama
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Okuno Chem Ind Co
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/04Electroplating: Baths therefor from solutions of chromium
    • C25D3/06Electroplating: Baths therefor from solutions of chromium from solutions of trivalent chromium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

The present invention provides a trivalent chromium plating bath which comprises an aqueous solution containing a trivalent chromium compound, a complexing agent, a fluoride, aluminum sulfate and a boric acid compound. According to the present invention, a novel trivalent chromium plating bath can be produced, which has a high coating film deposition rate, is suitable for thick plating, and has improved deposition performance in a low current density range and an improved deposition rate.

Description

3價鉻鍍敷浴 Trivalent chrome plating bath 發明領域 Field of invention

本發明是有關於一種可加厚鍍層之3價鉻鍍敷浴。 The present invention relates to a trivalent chromium plating bath which can be thickened.

發明背景 Background of the invention

具備高硬度與優異的耐蝕性、耐磨耗性等之鍍鉻層(chromium plating),被廣泛應用在汽車零件、成型用模具、軋延滾筒(press roll)、印刷滾筒等上。特別是在成型模具與滾筒等用途上,會進行所謂的鍍硬鉻之加厚鍍層的鍍鉻處理。 Chrome plating having high hardness, excellent corrosion resistance, and abrasion resistance is widely used in automobile parts, molding dies, press rolls, printing rolls, and the like. In particular, in applications such as molding dies and rollers, chrome plating of a so-called hard chrome-plated thick coating is performed.

迄今以來,以這種目的為主而使用之鉻鍍敷浴,為含有6價鉻作為鉻成分之6價鉻鍍敷浴。特別是在需要加厚鍍層之鍍硬鉻上,足夠的析出速度是必要的,因而會廣泛採用6價鉻鍍敷浴。 Heretofore, a chrome plating bath mainly used for such a purpose is a hexavalent chromium plating bath containing hexavalent chromium as a chromium component. In particular, in the case of hard chrome plating which requires a thick plating layer, a sufficient deposition rate is necessary, and thus a hexavalent chromium plating bath is widely used.

但是,近年來因使用有害的6價鉻鍍敷浴而產生的環境面上的顧慮以及對人體的影響,已備受質疑,使可用於取代6價鉻鍍敷浴的代替技術成為當務之急。 However, in recent years, environmental concerns and effects on the human body caused by the use of a harmful hexavalent chromium plating bath have been questioned, and an alternative technology that can be used to replace the hexavalent chromium plating bath has become a top priority.

因此,已開發出含有比6價鉻毒性低之3價鉻的鍍敷浴,但是可供加厚鍍層之3價鉻鍍敷浴尚未進展到實用化 的程度。例如,在下述之專利文獻1中已揭示有,以含硫酸鉻鉀、草酸鹽、硫酸鋁以及氟化鈉之3價鉻鍍敷浴,作為可用於厚度約100μm以上之鍍鉻層的3價鉻鍍敷浴。但是,這個鍍敷浴所形成之鍍鉻膜,雖然在高電流密度部分會形成比較良好的鍍膜,但因在低電流部分的析出性差,附著均勻性低劣,並無法適用於形狀複雜的物品。此外,關於鍍鉻之析出速度方面,也還有待進一步的改善。 Therefore, a plating bath containing trivalent chromium which is less toxic than hexavalent chromium has been developed, but a trivalent chromium plating bath which can be used for thickening plating has not yet progressed to practical use. Degree. For example, Patent Document 1 listed below discloses a trivalent chromium plating bath containing potassium chromium sulfate, oxalate, aluminum sulfate, and sodium fluoride as a trivalent value for a chromium plating layer having a thickness of about 100 μm or more. Chrome plating bath. However, the chrome-plated film formed by this plating bath has a relatively good plating film at a high current density portion, but the deposition property in a low current portion is poor, and the adhesion uniformity is inferior, and it cannot be applied to an article having a complicated shape. In addition, there is still room for further improvement regarding the rate of chrome plating.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本專利特表2008-506035號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2008-506035

發明概要 Summary of invention

本發明即是有鑒於上述之習知技術的現狀而作成者,其主要目的在於提供一鍍膜的析出速度快,適合進行加厚鍍敷的3價鉻鍍敷浴,且在低電流密度領域的析出性提升,並且在析出速度上也獲得改善之新穎的3價鉻鍍敷浴。 The present invention has been made in view of the above-mentioned state of the art, and its main object is to provide a trivalent chromium plating bath which is excellent in deposition rate of a plating film, suitable for thick plating, and in the field of low current density. A novel trivalent chromium plating bath which has improved precipitation and improved in precipitation speed.

本案發明者為了達成上述之目的而專心致志反覆進行了研究。其結果發現,藉由在含3價鉻化合物與錯合劑(complexing agent)之鍍敷浴中,再同時添加氟化物、硫酸鋁以及硼酸化合物,就可以提升低電流密度領域的析出性,且可讓附著均勻性變好。並且,藉由進一步在此鍍敷 浴中添加導電性鹽類,可改善附著均勻性,同時可大幅提升析出速度。本發明即是根據此洞見,再深入地進行反覆檢討的結果而完成者。 Inventors of this case have devoted themselves to research in order to achieve the above objectives. As a result, it has been found that by adding a fluoride, an aluminum sulfate, and a boric acid compound simultaneously in a plating bath containing a trivalent chromium compound and a complexing agent, the precipitation in the field of low current density can be improved, and Make the adhesion uniformity better. And by further plating here The addition of conductive salts to the bath improves adhesion uniformity and greatly increases the rate of precipitation. The present invention has been completed based on the findings of this review and further intensive review.

亦即,本發明是可提供以下之3價鉻鍍敷浴者。 That is, the present invention is to provide the following trivalent chromium plating bath.

第1項. 一種3價鉻鍍敷浴,係由含有3價鉻化合物、錯合劑、氟化物、硫酸鋁以及硼酸化合物之水溶液所構成。 Item 1. A trivalent chromium plating bath comprising an aqueous solution containing a trivalent chromium compound, a complexing agent, a fluoride, an aluminum sulfate, and a boric acid compound.

第2項. 如上述第1項所記載的3價鉻鍍敷浴,其還含有導電性鹽類。 Item 2. The trivalent chromium plating bath according to the above item 1, which further contains a conductive salt.

第3項. 如上述第1或2項所記載的3價鉻鍍敷浴,錯合劑是選自於由水溶液脂肪族羧酸及其鹽類所構成之群組中的至少一種化合物。 Item 3. The trivalent chromium plating bath according to the above item 1, wherein the coupling agent is at least one compound selected from the group consisting of aqueous aliphatic carboxylic acids and salts thereof.

第4項. 如上述第1到3項之任一項所記載的3價鉻鍍敷浴,導電性鹽類為硫酸鹽。 Item 4. The trivalent chromium plating bath according to any one of the items 1 to 3 above, wherein the conductive salt is a sulfate.

第5項. 如上述第1到4項之任一項所記載的3價鉻鍍敷浴,錯合劑係以相對於1莫耳的3價鉻離子含有0.1~0.3莫耳。 The trivalent chromium plating bath according to any one of the items 1 to 4 above, wherein the complexing agent is contained in an amount of 0.1 to 0.3 mol per 1 mol of the trivalent chromium ion.

第6項. 如上述第1到5項之任一項所記載的3價鉻鍍敷浴,其係將3價鉻化合物與錯合劑以3價鉻之錯合物溶液進行摻混,該3價鉻之錯合物溶液係將含3價鉻化合物與錯合劑之水溶液保持在加熱下而得者。 The trivalent chromium plating bath according to any one of the items 1 to 5, wherein the trivalent chromium compound and the complexing agent are blended in a solution of a trivalent chromium complex. The chrome complex solution is obtained by keeping an aqueous solution containing a trivalent chromium compound and a complexing agent under heating.

第7項. 如上述第1到6項之任一項所記載的3價鉻鍍敷浴,其pH值為1~2.5。 Item 7. The trivalent chromium plating bath according to any one of the above items 1 to 6, which has a pH of from 1 to 2.5.

第8項. 一種3價鉻鍍敷方法,其係在如上述第1到7項之任一項所記載的3價鉻鍍敷浴中,將被鍍敷物作為陰極來進 行通電。 Item 8. A trivalent chromium plating method, wherein the plated material is used as a cathode in the trivalent chromium plating bath according to any one of items 1 to 7 above. Line power up.

以下,具體說明本發明之3價鉻鍍敷浴。 Hereinafter, the trivalent chromium plating bath of the present invention will be specifically described.

本發明之3價鉻鍍敷浴,是將3價鉻化合物、錯合劑、氟化物、硫酸鋁以及硼酸當作必要成分而含有者。藉由調配出這樣的成分來使用,可以提升低電流密度領域中的析出性,而形成附著均勻性良好之鍍鉻膜。 The trivalent chromium plating bath of the present invention contains a trivalent chromium compound, a complexing agent, a fluoride, aluminum sulfate, and boric acid as essential components. By using such a component, it is possible to improve the precipitation property in the field of low current density and form a chromium plating film having good adhesion uniformity.

此外,於上述鉻鍍敷浴中,藉由因應需要而添加導電性鹽類,可以達到在低電流密度領域之析出性的改善,同時大幅提升鍍層之析出速度。 Further, in the above-described chrome plating bath, by adding a conductive salt as needed, it is possible to improve the precipitation property in the field of low current density and to greatly increase the deposition rate of the plating layer.

以下,具體說明本發明之3價鉻鍍敷浴中所含的各成分。 Hereinafter, each component contained in the trivalent chromium plating bath of the present invention will be specifically described.

(1)3價鉻化合物 (1) Trivalent chromium compounds

3價鉻化合物,只要是水溶性之3價鉻化合物即可,並可使用例如,硫酸鉻、鹼性硫酸鉻等。3價鉻化合物,可單獨使用一種或混合二種以上來使用。 The trivalent chromium compound may be a water-soluble trivalent chromium compound, and for example, chromium sulfate, basic chromium sulfate, or the like can be used. The trivalent chromium compound may be used alone or in combination of two or more.

關於3價鉻化合物之濃度,並無特別限制,但是宜為例如,將鉻金屬濃度設定在20~40g/L左右,而較佳為設定在25~35g/L左右。 The concentration of the trivalent chromium compound is not particularly limited, but it is preferably set to, for example, a chromium metal concentration of about 20 to 40 g/L, and preferably about 25 to 35 g/L.

(2)錯合劑 (2) wrong agent

作為錯合劑,只要是對3價鉻具有錯合能力之化合物均可使用,並無特別限制。特別是,宜使用選自於由水溶液脂肪族羧酸及其鹽類所構成之群組中的至少一種化合物(以下,有時稱為「羧酸化合物」)。 The compound to be used is a compound which has a mismatching ability to trivalent chromium, and is not particularly limited. In particular, at least one compound selected from the group consisting of aqueous aliphatic carboxylic acids and salts thereof (hereinafter sometimes referred to as "carboxylic acid compound") is preferably used.

針對水溶液脂肪族羧酸的種類,並無特別限制, 只要是可配製成預定濃度之水溶液的羧酸均可使用。例如,可使用甲酸、醋酸等之脂肪族單羧酸;草酸、丙二酸、琥珀酸(丁二酸)等之脂肪族二羧酸;葡萄糖酸等之脂肪族羥基單羧酸:蘋果酸(羥基丁二酸)等之脂肪族羥基二羧酸;檸檬酸等之脂肪族羥基三羧酸等。 There is no particular limitation on the type of the aqueous aliphatic carboxylic acid. Any carboxylic acid which can be formulated into an aqueous solution of a predetermined concentration can be used. For example, an aliphatic monocarboxylic acid such as formic acid or acetic acid; an aliphatic dicarboxylic acid such as oxalic acid, malonic acid or succinic acid (succinic acid); an aliphatic hydroxymonocarboxylic acid such as gluconic acid: malic acid can be used. An aliphatic hydroxy dicarboxylic acid such as hydroxysuccinic acid; an aliphatic hydroxy tricarboxylic acid such as citric acid or the like.

水溶性脂肪族羧酸之鹽類,只要是上述各種羧酸之水溶性鹽類即可,並可使用例如,鈉鹽、鉀鹽等之鹼金屬鹽、鈣鹽、鎂鹽等之鹼土類金屬鹽、銨鹽等。 The salt of the water-soluble aliphatic carboxylic acid may be a water-soluble salt of the above various carboxylic acids, and an alkaline earth metal such as an alkali metal salt such as a sodium salt or a potassium salt, a calcium salt or a magnesium salt may be used. Salt, ammonium salt, etc.

錯合劑之使用量,相對於鍍敷浴中所含之1莫耳的3價鉻離子,宜為0.1~0.8莫耳左右。特別是,可以藉由相對於1莫耳的3價鉻離子,形成0.1~0.3莫耳左右,以提升鍍鉻膜之析出速度。 The amount of the miscible agent used is preferably about 0.1 to 0.8 mol with respect to 1 mol of the trivalent chromium ion contained in the plating bath. In particular, it is possible to form a deposition rate of the chrome-plated film by forming 0.1 to 0.3 mole with respect to 1 mol of the trivalent chromium ion.

(3)氟化物 (3) Fluoride

在本發明之3價鉻鍍敷浴中,必須摻混氟化物,藉此,可提升電流效率。 In the trivalent chromium plating bath of the present invention, fluoride must be blended, whereby current efficiency can be improved.

氟化物之具體例,可以列舉出,氟化鈉、氟化銨、氟化鉀、氟化硼、氟化鈣等。這些氟化物可以單獨使用一種或混合二種以上來使用。 Specific examples of the fluoride include sodium fluoride, ammonium fluoride, potassium fluoride, boron fluoride, and calcium fluoride. These fluorides may be used alone or in combination of two or more.

氟化物的濃度,宜設成10~50g/L左右,較佳為設成25~35g/L左右。 The concentration of the fluoride should be set to about 10 to 50 g/L, preferably about 25 to 35 g/L.

(4)硫酸鋁以及硼酸化合物 (4) Aluminum sulfate and boric acid compounds

在本發明之3價鉻鍍敷浴中,必須同時摻混硫酸鋁與硼酸化合物。藉由同時使用這些成分,可以改善低電流密度領域中的析出性,並使附著均勻性變佳。 In the trivalent chromium plating bath of the present invention, aluminum sulfate and a boric acid compound must be simultaneously blended. By using these components at the same time, the precipitation property in the field of low current density can be improved, and the adhesion uniformity can be improved.

宜將硫酸鋁的濃度設定在50~150g/L左右,較佳為設成80~120g/L左右。 The concentration of aluminum sulfate should be set at about 50 to 150 g/L, preferably about 80 to 120 g/L.

硼酸化合物,除了硼酸之外,還可使用硼酸鈉、硼酸鉀等硼酸鹽,可將這些成分單獨使用或混合二種以上來使用。宜將硼酸化合物的濃度設定在20~80g/L左右,較佳為設成30~60g/L左右。 In addition to boric acid, a borate such as sodium borate or potassium borate may be used, and these components may be used singly or in combination of two or more. The concentration of the boric acid compound should be set to about 20 to 80 g/L, preferably about 30 to 60 g/L.

(5)導電性鹽類 (5) Conductive salts

在本發明之3價鉻鍍敷浴中,可因應需要而添加導電性鹽類。藉由將導電性鹽類和上述必要成分一起摻混,可以大幅提升鍍鉻膜之附著均勻性與析出速度。 In the trivalent chromium plating bath of the present invention, a conductive salt may be added as needed. By blending the conductive salt with the above-mentioned essential components, the adhesion uniformity and the deposition rate of the chrome-plated film can be greatly improved.

導電性鹽類,可使用例如,硫酸鉀、硫酸鈉、硫酸銨等之硫酸鹽、氯化鉀、氯化鈉等之鹼金屬氯化物等。這些導電性鹽類可單獨使用一種或混合二種以上來使用。 As the conductive salt, for example, a sulfate such as potassium sulfate, sodium sulfate or ammonium sulfate, an alkali metal chloride such as potassium chloride or sodium chloride, or the like can be used. These conductive salts may be used alone or in combination of two or more.

在這些導電性鹽類之中,特別理想的是,使用硫酸鉀、硫酸鈉、硫酸銨等之硫酸鹽。 Among these conductive salts, it is particularly preferable to use a sulfate such as potassium sulfate, sodium sulfate or ammonium sulfate.

針對導電性鹽類之濃度,並無特別限制,但是為了能充分發揮上述效果,宜設定在50~200g/L左右,較佳為設成100~180g/L左右。 The concentration of the conductive salt is not particularly limited. However, in order to sufficiently exhibit the above effects, it is preferably set to about 50 to 200 g/L, preferably about 100 to 180 g/L.

3價鉻鍍敷浴 Trivalent chrome plating bath

本發明之3價鉻鍍敷浴是將上述之3價鉻化合物、錯合劑、氟化物、硫酸鋁以及硼酸化合物,及進一步因應需要之導電性鹽類溶解於水中而配製而成者,且各成分之溶解順序不拘。 The trivalent chromium plating bath of the present invention is prepared by dissolving the above-mentioned trivalent chromium compound, a complexing agent, a fluoride, an aluminum sulfate, a boric acid compound, and a conductive salt which is further required in water, and each of them is prepared. The order of dissolution of the ingredients is not limited.

本發明之3價鉻鍍敷浴的pH,通常宜設定在1~3.0 左右的範圍。特別地,當設定在1.8~2.5左右之範圍時,可使低電流密度領域的析出性提升並使附著均勻性變好。 The pH of the trivalent chromium plating bath of the present invention is usually set at 1 to 3.0. The range around. In particular, when it is set in the range of about 1.8 to 2.5, the precipitation property in the field of low current density can be improved and the adhesion uniformity can be improved.

含3價鉻化合物之錯合物溶液 Complex solution containing trivalent chromium compound

在本發明之3價鉻鍍敷浴中,雖然可以將3價鉻化合物與錯合劑溶解於水中以直接調製出鍍敷浴,但是,特別理想的是,預先將3價鉻化合物與錯合劑混合,使其在加熱下充分熟化以製作成安定之含3價鉻化合物的錯合物溶液,並藉由將所得到之錯合物溶液與其他成分一起溶解在水中以調製成3價鉻鍍敷浴。藉由使用像這樣進行而得到之3價鉻錯合物溶液,即使是在鉻鍍敷浴剛建浴完成之時,也可以形成良好的鍍鉻膜,並不需要長時間的電解處理,因而大幅提升了作業效率。而且所形成之鍍鉻膜可變成具有良好的外觀之物,特別是,可將低電流密度部分的外觀提升。 In the trivalent chromium plating bath of the present invention, although the trivalent chromium compound and the complexing agent can be dissolved in water to directly prepare the plating bath, it is particularly preferable to mix the trivalent chromium compound with the complexing agent in advance. , fully matured under heating to prepare a stable solution of a complex solution containing a trivalent chromium compound, and prepared into a trivalent chromium plating by dissolving the obtained complex solution together with other components in water. bath. By using the trivalent chromium complex solution obtained as described above, a good chrome plating film can be formed even when the chrome plating bath is just completed, and a long-time electrolytic treatment is not required, so that Improve work efficiency. Moreover, the formed chrome-plated film can be made to have a good appearance, and in particular, the appearance of the low current density portion can be improved.

含3價鉻化合物之錯合物溶液,可藉由將含有3價鉻化合物與錯合劑之水溶液保持在加熱下之作法而得到。通常,可藉由在溶解有錯合劑的水溶液中添加3價鉻化合物,並在加熱下保持一定的時間而得到。 The complex solution containing a trivalent chromium compound can be obtained by maintaining an aqueous solution containing a trivalent chromium compound and a complexing agent under heating. Usually, it can be obtained by adding a trivalent chromium compound to an aqueous solution in which a complexing agent is dissolved, and maintaining it under heating for a certain period of time.

溶解3價鉻化合物與錯合劑之順序不拘,並可適用,使錯合劑溶解在水中後再添加3價鉻化合物之方法,使3價鉻化合物溶解在水中後再添加錯合劑之方法,使錯合劑與3價鉻化合物同時溶解在水中之方法等之任一種方法。此時,液溫宜為40~100℃左右,較佳為50~90℃左右。 The order of dissolving the trivalent chromium compound and the complexing agent is not limited, and the method is applicable, and the method of adding a trivalent chromium compound after dissolving the dissolving agent in water, and dissolving the trivalent chromium compound in water, and then adding a wrong agent, is wrong. Any of various methods such as a method in which a mixture is dissolved in water at the same time as a trivalent chromium compound. At this time, the liquid temperature is preferably about 40 to 100 ° C, preferably about 50 to 90 ° C.

含3價鉻化合物之錯合物溶液,通常是在對3價鉻鍍敷浴作建浴之時稀釋而使用。因此,雖然針對該錯合物 溶液中之3價鉻化合物的濃度並無特別限制,但是,以例如,鉻化合物濃度來看,宜設定成30~150g/L左右,較佳為設定在50~100g/L左右。 A complex solution containing a trivalent chromium compound is usually used by diluting it while making a bath for a trivalent chromium plating bath. Therefore, although for the complex The concentration of the trivalent chromium compound in the solution is not particularly limited. However, for example, the concentration of the chromium compound is preferably set to about 30 to 150 g/L, preferably about 50 to 100 g/L.

針對錯合劑之添加量,如上所述,相對於1莫耳之3價鉻離子,宜設定在0.1~0.8莫耳左右,較佳為使用0.1~0.3莫耳左右。 The amount of the dopant to be added is preferably set to about 0.1 to 0.8 mol, preferably about 0.1 to 0.3 mol, as described above, with respect to 1 mol of the trivalent chromium ion.

此外,針對含有3價鉻之錯合物溶液中的錯合劑濃度,雖然並無特別之限制,但宜設定在例如,10~200g/L左右,較佳為設定在20~100g/L左右。 Further, the concentration of the complexing agent in the solution containing trivalent chromium is not particularly limited, but is preferably set to, for example, about 10 to 200 g/L, preferably about 20 to 100 g/L.

接下來,可以藉由將含錯合劑與3價鉻化合物之水溶液保持在40~100℃左右,更理想的是50~90℃左右的溫度範圍,以得到含3價鉻化合物之錯合物溶液。保持在此溫度範圍的時間,通常,以設定在30分鐘左右以上為宜,較佳為設定在1小時左右以上,更佳為設定在2小時左右以上。具體而言,加熱溫度愈低則愈宜作長時間保持,例如,在40℃左右的加熱溫度下最好能保持5小時左右以上,在80℃左右的加熱溫度下最好能保持3小時以上。藉此,就可以獲得含3價鉻之安定的錯合物溶液。 Next, the solution containing the trivalent chromium compound can be obtained by maintaining the aqueous solution containing the complexing agent and the trivalent chromium compound at a temperature of about 40 to 100 ° C, more preferably about 50 to 90 ° C. . The time to maintain the temperature range is usually set to about 30 minutes or more, preferably about 1 hour or more, and more preferably about 2 hours or more. Specifically, the lower the heating temperature, the more preferable it is to maintain it for a long period of time. For example, it is preferably maintained at a heating temperature of about 40 ° C for about 5 hours or more, and preferably at a heating temperature of about 80 ° C for more than 3 hours. . Thereby, a solution of a complex solution containing divalent chromium is obtained.

鍍鉻方法 Chrome plating method

針對使用本發明之3價鉻鍍敷浴的鍍敷方法,並無特別限制,與使用一般的3價鉻鍍敷浴之鍍敷方法同樣地進行即可。 The plating method using the trivalent chromium plating bath of the present invention is not particularly limited, and may be carried out in the same manner as the plating method using a general trivalent chromium plating bath.

作為鍍敷時使用的陽極,並無特別限制,通常可以使用Ti-Pt電極等公知的不溶性陽極。特別是對使用以 Ir-Ta複合氧化物薄膜被覆之Ti電極的情況,在可以抑制6價鉻的生成之點上是有利的。 The anode used for the plating is not particularly limited, and a known insoluble anode such as a Ti-Pt electrode can be usually used. Especially for use In the case of the Ti electrode coated with the Ir-Ta composite oxide film, it is advantageous in that the formation of hexavalent chromium can be suppressed.

在3價鉻鍍敷浴的浴溫方面,當鍍敷作業時之浴溫低時,則附著均勻性會提升,反之當浴溫高時,則往低電流密度之附著均勻性會有降低的傾向。又,浴溫過低時,恐有成分會發生結晶化之疑慮。考量到這一點,宜將浴溫設在25~50℃左右,較佳為設定在30~40℃左右。 In the bath temperature of the trivalent chromium plating bath, when the bath temperature during the plating operation is low, the adhesion uniformity is improved, whereas when the bath temperature is high, the adhesion uniformity to the low current density is lowered. tendency. Moreover, when the bath temperature is too low, there is a fear that the components will crystallize. Considering this point, the bath temperature should be set at about 25~50 °C, preferably around 30~40 °C.

針對使用本發明之3價鉻鍍敷浴之時的電流密度範圍,雖然並無特別限制,但本發明之3價鉻鍍敷浴還是可以形成在低電流密度領域中的析出性良好,且在寬廣的電流密度範圍中具有良好的外觀之鍍鉻膜。例如,在10~40A/dm2左右之陰極電流密度範圍中,均可形成良好外觀之鍍鉻膜。 The range of the current density at the time of using the trivalent chromium plating bath of the present invention is not particularly limited, but the trivalent chromium plating bath of the present invention can be formed in a low current density field with good precipitation property, and A chrome-plated film with a good appearance in a wide range of current densities. For example, a chrome-plated film having a good appearance can be formed in a cathode current density range of about 10 to 40 A/dm 2 .

關於鍍敷時間,可視作為目標的鍍鉻膜之膜厚作適當的決定即可。特別的是,根據本發明之3價鉻鍍敷浴,即使進行長時間鍍敷,鍍膜也不會停止成長,並可因應鍍敷時間而增加鍍膜的厚度。因此,可進行例如,厚度超過50μm的加厚鍍鉻。 Regarding the plating time, the film thickness of the target chrome-plated film can be appropriately determined. In particular, according to the trivalent chromium plating bath of the present invention, even if plating is performed for a long period of time, the plating film does not stop growing, and the thickness of the plating film can be increased in accordance with the plating time. Therefore, for example, thick chrome plating having a thickness exceeding 50 μm can be performed.

具有鍍鉻膜的物品 Article with chrome film

本發明之3價鉻鍍敷浴,可以用在例如,工業用鍍鉻、裝飾鍍鉻等各種用途上。特別的是,根據本發明之3價鉻鍍敷浴,可以在寬廣的電流密度範圍中,形成具有高鍍膜硬度、且具有足夠的膜厚之耐蝕性方面也優異的良好鍍膜。因此,本發明之3價鉻鍍敷浴為特別適合用在工業用鍍鉻之 用途上者。 The trivalent chromium plating bath of the present invention can be used in various applications such as industrial chrome plating and decorative chrome plating. In particular, according to the trivalent chromium plating bath of the present invention, it is possible to form a good plating film which is excellent in corrosion resistance and has a sufficient film thickness in a wide current density range. Therefore, the trivalent chromium plating bath of the present invention is particularly suitable for use in industrial chrome plating. Use the above.

工業用鍍鉻,可利用鍍鉻膜之高硬度、耐磨耗性、耐蝕性、密接性、脫模性等特性而被運用在各種產業領域中,並可用在例如,模具、軋延滾筒、印刷滾筒等之製作上。在工業用鍍鉻中,作為被鍍敷物,主要使用的有例如,鋼鐵、不鏽鋼、黃銅、鋅壓鑄件等金屬素材。在工業用鍍鉻的用途上,通常,大多會進行50μm左右以上的加厚鍍敷。 Industrial chrome plating can be used in various industrial fields due to its high hardness, wear resistance, corrosion resistance, adhesion, and mold release properties, and can be used, for example, in molds, rolling rolls, and printing cylinders. Waiting for the production. In the industrial chrome plating, as the material to be plated, for example, metal materials such as steel, stainless steel, brass, and zinc die-casting are mainly used. In industrial chrome plating applications, thick plating of about 50 μm or more is usually performed.

又,裝飾用鍍鉻,是作為鎳鍍敷層的保護層而被使用,並將鍍鉻膜之硬度與特有的色調加以活用。裝飾用鍍鉻被廣泛使用於例如,汽車相關產業上,被鍍敷物方面,除了上述的金屬素材之外,還有ABS、PC/ABS、PC、尼龍等各種功能性塑膠材料可被使用。 Further, chrome plating for decoration is used as a protective layer of a nickel plating layer, and the hardness of the chrome plating film and the characteristic color tone are utilized. Decorative chrome is widely used in, for example, automotive-related industries. In addition to the above-mentioned metal materials, various functional plastic materials such as ABS, PC/ABS, PC, and nylon can be used.

在此等的各種素材上形成鍍鉻膜時,針對金屬素材,可使用本發明之3價鉻鍍敷浴直接形成鍍鉻膜。又,以外觀、耐蝕性等的提升作為目的時,也有在進行鍍銅、鍍鎳等之後,再進行鍍鉻之作法。 When a chrome-plated film is formed on each of these materials, a chrome-plated film can be directly formed on the metal material using the trivalent chromium plating bath of the present invention. Further, in the case of improvement in appearance, corrosion resistance, and the like, there is a case where chrome plating is performed after copper plating, nickel plating, or the like.

為了在塑膠素材上形成鍍鉻膜,雖然可依照常規作法,而採用在經過蝕刻(etching)、賦予觸媒等步驟之後,以無電解鍍鎳、無電解鍍銅等來形成導電性鍍膜,再進行電鍍銅、電鍍鎳等,然後形成鍍鉻膜之一般作法,但並非受限於此步驟者。在以裝飾為目的而形成鍍鉻膜的情況中,通常以形成0.1~0.5μm左右之膜厚較薄的鍍鉻膜的情形為多。 In order to form a chrome-plated film on a plastic material, it is possible to form a conductive plating film by electroless nickel plating, electroless copper plating, or the like after etching (etching), giving a catalyst, etc., according to a conventional method. The general practice of electroplating copper, electroplating nickel, etc., and then forming a chrome-plated film, but is not limited to this step. In the case where a chrome-plated film is formed for the purpose of decoration, a chrome-plated film having a thin film thickness of about 0.1 to 0.5 μm is usually formed.

依據本發明之3價鉻鍍敷浴,可達成以下之顯著效果。 According to the trivalent chromium plating bath of the present invention, the following remarkable effects can be achieved.

(1)在低電流密度領域的附著均勻性佳,且可以在寬廣的電流密度範圍中形成良好的鍍鉻膜。 (1) Good adhesion uniformity in the field of low current density, and a good chrome plating film can be formed in a wide current density range.

(2)由於可因應鍍敷時間使鍍膜成長,所以可加厚到超過50μm。 (2) Since the coating can be grown in response to the plating time, it can be thickened to more than 50 μm.

(3)鍍膜之析出速度快,可以在較短的時間內形成加厚鍍膜。因此,是一種作業效率高的鍍敷浴。 (3) The deposition rate of the coating film is fast, and the thick coating film can be formed in a short time. Therefore, it is a plating bath with high work efficiency.

(4)所形成之鍍鉻膜為具有高鍍膜硬度,且耐蝕性上亦優異者。 (4) The chrome-plated film formed has a high plating hardness and is excellent in corrosion resistance.

(5)即使在不進行鉻酸浸漬處理的情形下,也能形成具良好耐蝕性之鍍鉻膜。 (5) A chrome-plated film having good corrosion resistance can be formed even without chromic acid immersion treatment.

用以實施發明之形態 Form for implementing the invention

以下,列舉實施例以更加詳盡地說明本發明。 Hereinafter, the present invention will be described in more detail by way of examples.

製造例1 Manufacturing example 1

在200mL的純水中加入草酸2水合物48g/L(0.38mol/L),使浴溫上升至60℃,並加入40%硫酸鉻水溶液610mL/L(Cr=100g/L,1.9mol/L)後,攪拌使其完全溶解。 Add oxalic acid 2 hydrate 48g / L (0.38mol / L) to 200mL of pure water, increase the bath temperature to 60 ° C, and add 40% chromium sulfate aqueous solution 610mL / L (Cr = 100g / L, 1.9mol / L After that, stir it to dissolve completely.

之後,在將浴溫保持於60℃的狀態下持續加熱8小時。8小時過後停止加熱,並冷卻到室溫,得到含3價鉻 錯合物之溶液。使用250mL/L(Cr=25g/L)之此錯合物溶液。將其作為3價鉻錯合物溶液A。 Thereafter, heating was continued for 8 hours while maintaining the bath temperature at 60 °C. After 8 hours, the heating was stopped and cooled to room temperature to obtain trivalent chromium. A solution of the complex. A 250 mL/L (Cr = 25 g/L) solution of this complex was used. This was taken as a trivalent chromium complex solution A.

製造例2 Manufacturing Example 2

在400mL的純水中加入草酸2水合物72g/L(0.57mol/L),使浴溫上升至60℃,並加入40%硫酸鉻水溶液610mL/L(Cr=100g/L,1.9mol/L)後,攪拌使其完全溶解。 Add oxalic acid 2 hydrate 72g / L (0.57mol / L) in 400mL of pure water, increase the bath temperature to 60 ° C, and add 40% chromium sulfate aqueous solution 610mL / L (Cr = 100g / L, 1.9mol / L After that, stir it to dissolve completely.

之後,在將浴溫保持於60℃的狀態下持續加熱8小時。8小時過後停止加熱,並冷卻到室溫,得到含3價鉻錯合物之溶液。使用250mL/L(Cr=25g/L)之此錯合物溶液。將其作為3價鉻錯合物溶液B。 Thereafter, heating was continued for 8 hours while maintaining the bath temperature at 60 °C. Heating was stopped after 8 hours and cooled to room temperature to obtain a solution containing a trivalent chromium complex. A 250 mL/L (Cr = 25 g/L) solution of this complex was used. This was taken as a trivalent chromium complex solution B.

製造例3 Manufacturing Example 3

在200mL的純水中加入草酸2水合物96g/L(0.76mol/L),使浴溫上升至60℃,並加入40%硫酸鉻水溶液610mL/L(Cr=100g/L,1.9mol/L)後,攪拌使其完全溶解。 Add oxalic acid 2 hydrate 96g / L (0.76mol / L) in 200mL of pure water, increase the bath temperature to 60 ° C, and add 40% chromium sulfate aqueous solution 610mL / L (Cr = 100g / L, 1.9mol / L After that, stir it to dissolve completely.

之後,在將浴溫保持於60℃的狀態下持續加熱8小時。8小時過後停止加熱,並冷卻到室溫,得到含3價鉻錯合物之溶液。使用310mL/L(Cr=31g/L)之此錯合物溶液。將其作為3價鉻錯合物溶液C。 Thereafter, heating was continued for 8 hours while maintaining the bath temperature at 60 °C. Heating was stopped after 8 hours and cooled to room temperature to obtain a solution containing a trivalent chromium complex. A 310 mL/L (Cr = 31 g/L) solution of this complex was used. This was taken as a trivalent chromium complex solution C.

製造例4 Manufacturing Example 4

在200mL的純水中加入草酸2水合物96g/L(0.76mol/L),使浴溫上升至60℃,並加入40%硫酸鉻水溶液610mL/L(Cr=100g/L,1.9mol/L)後,攪拌使其完全溶解。 Add oxalic acid 2 hydrate 96g / L (0.76mol / L) in 200mL of pure water, increase the bath temperature to 60 ° C, and add 40% chromium sulfate aqueous solution 610mL / L (Cr = 100g / L, 1.9mol / L After that, stir it to dissolve completely.

之後,在將浴溫保持於60℃的狀態下持續加熱8小時。8小時過後停止加熱,並冷卻到室溫,得到含3價鉻 錯合物之溶液。使用250mL/L(Cr=25g/L)之此錯合物溶液。將其作為3價鉻錯合物溶液D。 Thereafter, heating was continued for 8 hours while maintaining the bath temperature at 60 °C. After 8 hours, the heating was stopped and cooled to room temperature to obtain trivalent chromium. A solution of the complex. A 250 mL/L (Cr = 25 g/L) solution of this complex was used. This was taken as a trivalent chromium complex solution D.

製造例5 Manufacturing Example 5

在400mL的純水中加入草酸2水合物192g/L(1.52mol/L),使浴溫上升至60℃,並加入40%硫酸鉻水溶液610mL/L(Cr=100g/L,1.9mol/L)後,攪拌使其完全溶解。 Add 192 g/L (1.52 mol/L) of oxalic acid 2 hydrate to 400 mL of pure water, raise the bath temperature to 60 ° C, and add 40% aqueous solution of chromium sulfate to 610 mL/L (Cr=100 g/L, 1.9 mol/L). After that, stir it to dissolve completely.

之後,在將浴溫保持於60℃的狀態下持續加熱8小時。8小時過後停止加熱,並冷卻到室溫,得到含3價鉻錯合物之溶液。使用250mL/L(Cr=25g/L)之此錯合物溶液。將其作為3價鉻錯合物溶液E。 Thereafter, heating was continued for 8 hours while maintaining the bath temperature at 60 °C. Heating was stopped after 8 hours and cooled to room temperature to obtain a solution containing a trivalent chromium complex. A 250 mL/L (Cr = 25 g/L) solution of this complex was used. This was taken as a trivalent chromium complex solution E.

實施例1~9以及比較例1~2 Examples 1 to 9 and Comparative Examples 1 to 2

將下表1以及表2所示之各成分溶解於水中以調製成3價鉻鍍敷浴。作為3價鉻化合物以及錯合劑,在比較例1、比較例2以及實施例9中,使用的是3價鉻化合物以及錯合劑未預先進行錯合者,且在實施例1中使用了上述製造例3所調製之3價鉻錯合物溶液C,在實施例2中使用了上述製造例4所調製之3價鉻錯合物溶液D,在實施例3中使用了上述製造例5所調製之3價鉻錯合物溶液E,在實施例4中使用了上述製造例2所調製之3價鉻錯合物溶液B,在實施例5~8中使用了上述製造例1所調製之3價鉻錯合物溶液A。 Each component shown in the following Table 1 and Table 2 was dissolved in water to prepare a trivalent chromium plating bath. As the trivalent chromium compound and the complexing agent, in the comparative example 1, the comparative example 2, and the ninth embodiment, the trivalent chromium compound and the complexing agent were used, and the above-mentioned manufacturing was used in Example 1. In the third embodiment, the trivalent chromium complex solution C prepared in Example 3 was used. In Example 2, the trivalent chromium complex solution D prepared in the above Production Example 4 was used, and in Example 3, the above-mentioned Production Example 5 was used. In the third embodiment, the trivalent chromium complex solution E was used in Example 4, and the trivalent chromium complex solution B prepared in the above Production Example 2 was used. In Examples 5 to 8, the above-mentioned Production Example 1 was used. Valence Chromium Complex Solution A.

使用上述之各個3價鉻鍍敷浴,以下述方法來進行鍍敷試驗,並評估附著均勻性與析出速度。 The plating test was carried out by the following method using each of the above-mentioned trivalent chromium plating baths, and the adhesion uniformity and the deposition rate were evaluated.

首先,被鍍敷物方面,使用的是在黃銅板上將光 亮鍍Ni製作成約3μm的膜的試樣(大小為10cm×6cm),並用各個3價鉻鍍敷浴來進行赫爾槽試驗(Hull cell test)。赫爾槽試驗條件是設成,槽電流5A,鍍敷時間5分鐘,且作為陽極使用的是,以Ir-Ta複合氧化物薄膜被覆之Ti電極。 First of all, in terms of being plated, the light is used on a brass plate. A sample (having a size of 10 cm × 6 cm) made of a film of about 3 μm was plated with Ni, and a Hull cell test was performed using each of the trivalent chromium plating baths. The Hull cell test conditions were set to a cell current of 5 A and a plating time of 5 minutes, and as the anode, a Ti electrode coated with an Ir-Ta composite oxide film was used.

在附著均勻性的評估方面,是針對鍍鉻後之各個被鍍敷物(赫爾槽板),以目視確認形成有良好鍍膜之範圍,並從高電流部分開始將形成良好鍍膜部分的長度,做成相對於赫爾槽板整體的長度(10cm)之比率來表示。這個比率愈大,表示連低電流部分亦愈可以形成良好的鍍鉻膜,且附著均勻性愈好。 In the evaluation of the adhesion uniformity, it is possible to visually confirm that a range of a good plating film is formed for each of the plated objects (the Hull channel plate) after chrome plating, and to form a length of a good plating portion from a high current portion. It is expressed by the ratio of the length (10 cm) of the entire Hull groove plate. The larger the ratio, the better the chrome-plated film can be formed even with the low current portion, and the adhesion uniformity is better.

在鍍鉻之析出速度方面,是使用電流密度分布量表,在赫爾槽板上,決定1次電流密度中相當於10、15、20、25、30及40A/dm2的部分,並藉由使用電解式膜厚計測量鍍鉻後之赫爾槽板的各電流密度部分的膜厚,以計算出每5分鐘的析出速度。並將結果表示在以下的表3及表4中。 In terms of the deposition rate of chrome plating, a current density distribution meter is used, and a portion corresponding to 10, 15, 20, 25 , 30, and 40 A/dm 2 in the primary current density is determined on the Hull plate. The film thickness of each current density portion of the chrome-plated Hull channel plate was measured using an electrolytic film thickness meter to calculate the deposition rate per 5 minutes. The results are shown in Tables 3 and 4 below.

從以上結果可以清楚得知以下各點。 From the above results, the following points can be clearly understood.

(1)比較例1的鍍敷浴,雖然是與專利文獻1的[0041]段之例2中所記載的鍍敷浴有相同組成者,但是附著均勻性的評估結果為17%,屬於低電流部分的析出性差者。又,在比較例1之鍍敷浴中添加了硫酸銨而形成之比較例2的鍍敷浴中,反而有附著均勻性降低的傾向。 (1) The plating bath of Comparative Example 1 has the same composition as the plating bath described in Example 2 of [0041] of Patent Document 1, but the evaluation result of adhesion uniformity is 17%, which is low. The precipitation of the current portion is poor. Further, in the plating bath of Comparative Example 2 in which ammonium sulfate was added to the plating bath of Comparative Example 1, the adhesion uniformity tends to be lowered.

相對於此,在比較例1的鍍敷浴中添加了硼酸而形成的實施例1的鍍敷浴,則附著均勻性變為35%,且低電流密度部分的析出性也提升了。 On the other hand, in the plating bath of Example 1 in which boric acid was added to the plating bath of Comparative Example 1, the adhesion uniformity was 35%, and the precipitation property of the low current density portion was also improved.

(2)實施例2~9的鍍敷浴都是除了硫酸鉻、草酸2水合物以及氟化鉀外,還含有硫酸鋁以及硼酸,甚至還含有作為導電性鹽類之硫酸銨者。在使用這些鍍敷浴的情況中,所形成之鍍鉻膜無論是附著均勻性與析出速度都很良好。 (2) The plating baths of Examples 2 to 9 all contain aluminum sulfate and boric acid in addition to chromium sulfate, oxalic acid dihydrate, and potassium fluoride, and even ammonium sulfate as a conductive salt. In the case of using these plating baths, the formed chromium plating film is excellent in both adhesion uniformity and deposition rate.

(3)尤其是pH為2之實施例2~4以及6~9的鍍敷浴,其附著均勻性良好。 (3) In particular, the plating baths of Examples 2 to 4 and 6 to 9 having a pH of 2 have good adhesion uniformity.

(4)在同時含有硼酸與硫酸銨,且相對於Cr之草酸的莫耳比為0.2~0.3的情況中,顯示了良好的析出速度(實施例4~9)。 (4) In the case where boric acid and ammonium sulfate were simultaneously contained, and the molar ratio of oxalic acid to Cr was 0.2 to 0.3, a good deposition rate was exhibited (Examples 4 to 9).

(5)從實施例6與實施例8的比較可清楚看出,將鍍敷浴的浴溫設定在35℃時,可使析出速度提升,並使附著均勻性也變好。 (5) As is clear from the comparison between Example 6 and Example 8, when the bath temperature of the plating bath was set to 35 ° C, the deposition rate was improved and the adhesion uniformity was also improved.

(6)不使3價鉻化合物與錯合劑預先進行錯合而使用之實施例9的鍍敷浴,雖然在附著均勻性以及析出速度方面是良好的,但為在低電流部分會形成條狀的鍍層,且外觀不佳者。相對於此,在與實施例9為相同組成,使用了使3價鉻化合物與錯合劑預先錯合而成之錯合物溶液的實施例8的鍍敷浴中,則在低電流部分也可形成良好外觀之鍍膜。 (6) The plating bath of Example 9 which is used in such a manner that the trivalent chromium compound and the complexing agent are not previously mixed, is excellent in adhesion uniformity and deposition rate, but forms a strip in a low current portion. The coating is not good. On the other hand, in the plating bath of Example 8 which has the same composition as that of Example 9, and a complex solution in which a trivalent chromium compound and a complexing agent are previously mixed, the low current portion can be used. A coating that forms a good appearance.

Claims (8)

一種3價鉻鍍敷浴,是由含有3價鉻化合物、錯合劑、氟化物、硫酸鋁以及硼酸化合物之水溶液所構成。 A trivalent chromium plating bath is composed of an aqueous solution containing a trivalent chromium compound, a complexing agent, a fluoride, an aluminum sulfate, and a boric acid compound. 如請求項1所述的3價鉻鍍敷浴,其還含有導電性鹽類。 The trivalent chromium plating bath according to claim 1, which further contains a conductive salt. 如請求項1或2所述的3價鉻鍍敷浴,其中錯合劑是選自於由水溶液脂肪族羧酸及其鹽類所構成之群組中的至少一種化合物。 The trivalent chromium plating bath according to claim 1 or 2, wherein the complexing agent is at least one compound selected from the group consisting of aqueous aliphatic carboxylic acids and salts thereof. 如請求項1~3之任一項所述的3價鉻鍍敷浴,其中導電性鹽類為硫酸鹽。 The trivalent chromium plating bath according to any one of claims 1 to 3, wherein the conductive salt is a sulfate. 如請求項1~4之任一項所述的3價鉻鍍敷浴,其中錯合劑係以相對於1莫耳的3價鉻離子含有0.1~0.3莫耳。 The trivalent chromium plating bath according to any one of claims 1 to 4, wherein the complexing agent is contained in an amount of 0.1 to 0.3 mol with respect to 1 mol of the trivalent chromium ion. 如請求項1~5之任一項所述的3價鉻鍍敷浴,其係將3價鉻化合物與錯合劑以3價鉻之錯合物溶液進行摻混,該3價鉻之錯合物溶液係將含3價鉻化合物與錯合劑之水溶液保持在加熱下而得者。 The trivalent chromium plating bath according to any one of claims 1 to 5, wherein the trivalent chromium compound and the complexing agent are blended with a trivalent chromium complex solution, and the trivalent chromium is mismatched. The solution is obtained by maintaining an aqueous solution containing a trivalent chromium compound and a complexing agent under heating. 如請求項1~6之任一項所述的3價鉻鍍敷浴,其pH值為1~2.5。 The trivalent chromium plating bath according to any one of claims 1 to 6, which has a pH of from 1 to 2.5. 一種3價鉻鍍敷方法,其特徵在於其係在如請求項1~7之任一項所述的3價鉻鍍敷浴中,將被鍍敷物作為陰極來進行通電。 A trivalent chromium plating method according to any one of claims 1 to 7, wherein the material to be plated is used as a cathode to conduct electricity.
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