TW201513137A - Light-emitting device using silver nanoparticles and method for producing same - Google Patents

Light-emitting device using silver nanoparticles and method for producing same Download PDF

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TW201513137A
TW201513137A TW103123621A TW103123621A TW201513137A TW 201513137 A TW201513137 A TW 201513137A TW 103123621 A TW103123621 A TW 103123621A TW 103123621 A TW103123621 A TW 103123621A TW 201513137 A TW201513137 A TW 201513137A
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silver
monoamine
light
emitting device
amine
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TW103123621A
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Yuki Iguchi
Kazuki Okamoto
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Daicel Corp
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
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    • HELECTRICITY
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    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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Abstract

The objective of the present invention is to provide: a light-emitting device having a circuit pattern having superior electrical conductivity and thermal conductivity and has a suppressed deterioration of an optical semiconductor element during the production process; and a method for producing the light-emitting device stably and conveniently without imparting thermal damage to the optical semiconductor element. The light-emitting device has an optical semiconductor element, a circuit pattern, and an insulating substrate, and is characterized by the optical semiconductor element and the circuit pattern being electrically and/or thermally connected, the circuit pattern being provided on the insulating substrate, the circuit pattern being formed by means of sintering silver nanoparticles, and the silver nanoparticles being obtained by the thermal decomposition of a mixture containing an amine (A) having an amino group and an aliphatic hydrocarbon group, and a silver compound (B).

Description

使用銀奈米粒子之發光裝置及其製造方法 Light-emitting device using silver nano particles and manufacturing method thereof

本發明係關於搭載有以發光二極體(LED,Light Emitting Diode)為代表之光半導體元件等的發光裝置及其製造方法。本案主張2013年7月9日在日本申請的特願2013-143479號之優先權,於此援用其內容。 The present invention relates to a light-emitting device in which an optical semiconductor element such as a light-emitting diode (LED) is mounted, and a method of manufacturing the same. The present application claims priority from Japanese Patent Application No. 2013-143479, filed on Jan. 9, 2013.

如專利文獻1所例示,以往藉由在電路基板上搭載光半導體元件而形成發光裝置。電路基板之電路圖案,係藉由微影術等使用光阻圖案之方法,對在絕緣基板的表面上以積層或鍍敷等所形成之銅箔進行蝕刻後,藉由對銅箔圖案的表面施予鍍金等而形成光澤面。藉由此電路圖案的表面之光澤面,可以電路圖案之表面反射來自電路基板上所搭載的光半導體元件之發光,而得到更多的光。 As exemplified in Patent Document 1, a light-emitting device has been conventionally formed by mounting an optical semiconductor element on a circuit board. The circuit pattern of the circuit board is formed by etching a copper foil formed by lamination or plating on the surface of the insulating substrate by using a photoresist pattern by lithography or the like, by etching the surface of the copper foil pattern. Gold plating or the like is applied to form a glossy surface. By the glossy surface of the surface of the circuit pattern, the surface of the circuit pattern can reflect the light emitted from the optical semiconductor element mounted on the circuit board to obtain more light.

然而,使用微影法形成電路圖案時,必須進行鍍敷加工或光阻圖案形成,有發光裝置的製造步驟變多之問題。又,當凹凸部存在於電路基板時,或必須形成高密度的電路圖案時,有電路圖案形成困難之問題。再者,使電路圖案的表面成為光澤面之際,必須鍍金等的鍍敷加工,有製造步驟變得更多而複雜,製造效率低落之問題。 However, when a circuit pattern is formed by the lithography method, plating processing or photoresist pattern formation must be performed, and there are problems in that the manufacturing steps of the light-emitting device become large. Further, when the uneven portion is present on the circuit board, or when a high-density circuit pattern must be formed, there is a problem that circuit pattern formation is difficult. In addition, when the surface of the circuit pattern is made into a glossy surface, plating such as gold plating is necessary, and the manufacturing process becomes more complicated and complicated, and the manufacturing efficiency is lowered.

專利文獻2中揭示一種發光裝置,其係具有光半導體元件及與此電性連接的電路圖案之發光裝置,其中藉由在絕緣基板的表面上塗布金屬膏而形成上述電路圖案,而且形成前述電路圖案的金屬膏本身之表面係被形成為能將由光半導體元件所發出的光予以反射之光澤面。藉此,可減少步驟而簡略化,容易形成高密度的電路圖案,可高效率地將電路圖案的表面形成光澤面。 Patent Document 2 discloses a light-emitting device which is an light-emitting device having an optical semiconductor element and a circuit pattern electrically connected thereto, wherein the circuit pattern is formed by coating a metal paste on a surface of the insulating substrate, and the circuit is formed The surface of the patterned metal paste itself is formed as a glossy surface capable of reflecting light emitted by the optical semiconductor element. Thereby, the steps can be simplified, the high-density circuit pattern can be easily formed, and the surface of the circuit pattern can be efficiently formed into a glossy surface.

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1 日本特開平8-32119號公報 Patent Document 1 Japanese Patent Laid-Open No. Hei 8-32119

專利文獻2 日本特開2009-65219號公報 Patent Document 2 Japanese Patent Laid-Open Publication No. 2009-65219

然而,專利文獻2中,關於金屬膏,可使用大部分的金屬,但並未揭示如銅等係氧化性高、不適合於奈米尺寸的金屬粒子等,具體的金屬之選定基準。又,要求即使在低溫(150~220℃)下也具有互相熔黏之性質的金屬粒子,而例示了銀粒子、丙烯酸樹脂、醇、甲苯等之成分,但並沒有具體揭示怎樣的組合或配合比率,可在低溫(150~220℃)互相熔黏,而得到光澤面或鏡面。再者,雖然簡單地記載藉由分配器或噴墨印表機之塗布,但沒有揭示一邊保持金屬膏的分散狀態或保存安定性一邊塗布之方法。根據以上,為了實現塗布金屬膏之方法,要求非常多的嘗試錯誤。 However, in Patent Document 2, most of the metals can be used for the metal paste. However, metal particles such as copper which are highly oxidizable and are not suitable for the nanometer size are not disclosed, and the specific metal is selected as a standard. Further, it is required to have metal particles having a property of being mutually fused at a low temperature (150 to 220 ° C), and components such as silver particles, acrylic resin, alcohol, toluene, etc. are exemplified, but no specific combination or cooperation is disclosed. The ratio can be melted at low temperature (150~220 °C) to obtain a glossy surface or a mirror surface. Further, although the application by a dispenser or an inkjet printer is simply described, a method of applying while maintaining the dispersion state or storage stability of the metal paste is not disclosed. According to the above, in order to realize the method of applying the metal paste, a lot of trial errors are required.

因此,本發明之目的在於提供:製造過程中的光半導體元件之劣化被抑制,具有導電性或熱傳導性優異的電路圖案之發光裝置;及可不對光半導體元件造成熱傷害,而簡便且安定地得到該發光裝置之製造方法。 Accordingly, an object of the present invention is to provide a light-emitting device having a circuit pattern excellent in conductivity or thermal conductivity while suppressing deterioration of an optical semiconductor element in a manufacturing process, and providing thermal damage to the optical semiconductor element without being damaged, and being simple and stable A method of manufacturing the light-emitting device is obtained.

本發明者們發現:藉由使用保存安定性、分散性、導電性、熱傳導性優異的特定之銀奈米粒子作為形成發光元件的電路圖案用之材料,可不對光半導體元件造成熱傷害(即,以製造過程中的光半導體元件之劣化經抑制之狀態),而簡便且安定地得到具有導電性或熱傳導性優異的電路圖案之高品質發光裝置,進而完成本發明。 The present inventors have found that by using specific silver nanoparticles having excellent stability, dispersibility, conductivity, and thermal conductivity as a material for forming a circuit pattern of a light-emitting element, thermal damage to the optical semiconductor element can be avoided (ie, In the state in which the deterioration of the optical semiconductor element in the manufacturing process is suppressed, a high-quality light-emitting device having a circuit pattern excellent in conductivity or thermal conductivity is easily and stably obtained, and the present invention has been completed.

即,本發明提供一種發光裝置,其係具有光半導體元件、電路圖案及絕緣基板之發光裝置,其特徵為:前述光半導體元件與前述電路圖案係電性及/或熱地連接,且前述電路圖案係設於前述絕緣基板之上,且前述電路圖案係藉由使銀奈米粒子燒結而形成,且前述銀奈米粒子係將包含具有脂肪族烴基及胺基的胺(A)以及銀化合物(B)之混合物予以熱分解而得的銀奈米粒子。 That is, the present invention provides a light-emitting device comprising a light-emitting device, a circuit pattern, and an insulating substrate, wherein the optical semiconductor element is electrically and/or thermally connected to the circuit pattern, and the circuit is The pattern is formed on the insulating substrate, and the circuit pattern is formed by sintering silver nanoparticles, and the silver nanoparticle system comprises an amine (A) having an aliphatic hydrocarbon group and an amine group, and a silver compound. The silver nanoparticle obtained by thermally decomposing the mixture of (B).

再者,提供前述發光裝置,其中前述混合物包含作為前述胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2)、及由脂肪族烴基與2個胺基所成之碳數8以下的脂肪族烴二胺(A3)。 Furthermore, the light-emitting device is provided, wherein the mixture contains an aliphatic hydrocarbon monoamine (A1) having a carbon number of 6 or more and an aliphatic hydrocarbon group and an amine group as the amine (A), and an aliphatic hydrocarbon group and An aliphatic hydrocarbon monoamine (A2) having a carbon number of 5 or less formed by one amine group, and an aliphatic hydrocarbon diamine (A3) having 8 or less carbon atoms formed from an aliphatic hydrocarbon group and two amine groups.

再者,提供前述發光裝置,其中前述混合物 包含作為前述胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、及由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2),以前述單胺(A1)與前述單胺(A2)之合計為基準,係以5莫耳%以上且小於20莫耳%之比例包含前述單胺(A1),及以超過80莫耳%且95莫耳%以下之比例包含前述單胺(A2)。 Furthermore, the foregoing light-emitting device is provided, wherein the aforementioned mixture An aliphatic hydrocarbon monoamine (A1) having 6 or more carbon atoms and an aliphatic group and an amine group formed of an aliphatic hydrocarbon group and an amine group as the amine (A), and a carbon number of 5, which is an aliphatic hydrocarbon group and an amine group The following aliphatic monoamine (A2) contains the aforementioned monoamine in a ratio of 5 mol% or more and less than 20 mol% based on the total of the monoamine (A1) and the monoamine (A2). A1), and the aforementioned monoamine (A2) is contained in a ratio of more than 80 mol% and 95 mol% or less.

再者,提供前述發光裝置,其中前述混合物 包含作為前述胺(A)之由碳數4以上的分支脂肪族烴基與1個胺基所成之分支脂肪族烴單胺(A4)。 Furthermore, the foregoing light-emitting device is provided, wherein the aforementioned mixture A branched aliphatic hydrocarbon monoamine (A4) comprising a branched aliphatic hydrocarbon group having 4 or more carbon atoms and one amine group as the amine (A).

再者,提供前述發光裝置,其中前述銀化合物(B)係草酸銀。 Furthermore, the light-emitting device is provided, wherein the silver compound (B) is silver oxalate.

再者,提供前述發光裝置,其中前述銀奈米粒子之平均粒徑為0.5nm~100nm。 Furthermore, the light-emitting device is provided, wherein the silver nanoparticles have an average particle diameter of 0.5 nm to 100 nm.

再者,提供前述發光裝置,其中前述光半導體元件及前述電路圖案之全部或一部分係經透明保護材料所被覆。 Furthermore, the light-emitting device is provided, wherein all or a part of the optical semiconductor element and the circuit pattern are covered with a transparent protective material.

再者,提供前述發光裝置,其中前述保護材料係由環氧系樹脂、矽氧系樹脂、丙烯酸系樹脂、碳酸酯系樹脂、降烯系樹脂、環烯烴系樹脂及聚醯胺樹脂中選出的一個以上之材料所構成。 Furthermore, the light-emitting device is provided, wherein the protective material is an epoxy resin, a siloxane resin, an acrylic resin, a carbonate resin, or a lowering agent. One or more materials selected from the group consisting of an olefin resin, a cycloolefin resin, and a polyamide resin.

又,本發明提供一種發光裝置之製造方法,其係前述發光裝置之製造方法,其包含:於絕緣基板上塗布包含銀奈米粒子的組成物之步驟(a);使前述組成物中所含有的銀奈米粒子燒結之步驟(b);於前述絕緣基板 上搭載光半導體元件之步驟(c);電性及/或熱地連接前述光半導體元件與電路圖案之步驟(d);及,以覆蓋前述電路圖案的方式形成保護材料之步驟(e)。 Moreover, the present invention provides a method of manufacturing a light-emitting device, comprising the step (a) of applying a composition containing silver nanoparticles on an insulating substrate; and comprising the composition Silver nanoparticle sintering step (b); on the aforementioned insulating substrate a step (c) of mounting an optical semiconductor element; a step (d) of electrically and/or thermally connecting the optical semiconductor element and the circuit pattern; and a step (e) of forming a protective material so as to cover the circuit pattern.

再者,提供前述發光裝置之製造方法,其中同時進行步驟(b)及前述步驟(d)。 Furthermore, a method of manufacturing the above-described light-emitting device is provided, wherein step (b) and the aforementioned step (d) are simultaneously performed.

更詳細而言,本發明關於以下 In more detail, the present invention relates to the following

[1]一種發光裝置,其係具有光半導體元件、電路圖案及絕緣基板之發光裝置,其特徵為:前述光半導體元件與前述電路圖案係電性及/或熱地連接、且前述電路圖案係設於前述絕緣基板之上,且前述電路圖案係藉由使銀奈米粒子燒結而形成,且前述銀奈米粒子係將包含具有脂肪族烴基及胺基的胺(A)以及銀化合物(B)之混合物予以熱分解而得的銀奈米粒子。 [1] A light-emitting device comprising a light semiconductor device, a circuit pattern, and an insulating substrate, wherein the optical semiconductor element is electrically and/or thermally connected to the circuit pattern, and the circuit pattern is And being formed on the insulating substrate, wherein the circuit pattern is formed by sintering silver nanoparticles, and the silver nanoparticle system comprises an amine (A) having an aliphatic hydrocarbon group and an amine group, and a silver compound (B) Silver nanoparticle obtained by thermal decomposition of the mixture.

[2]如[1]記載之發光裝置,其中前述混合物包含作為前述胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2)、及由脂肪族烴基與2個胺基所成之碳數8以下的脂肪族烴二胺(A3)。 [2] The light-emitting device according to [1], wherein the mixture contains an aliphatic hydrocarbon monoamine (A1) having 6 or more carbon atoms formed from an aliphatic hydrocarbon group and an amine group as the amine (A). An aliphatic hydrocarbon monoamine (A2) having an aliphatic hydrocarbon group and one amine group having 5 or less carbon atoms; and an aliphatic hydrocarbon diamine having 8 or less carbon atoms formed by an aliphatic hydrocarbon group and two amine groups (A3) ).

[3]如[2]記載之發光裝置,其中以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計為基準,前述混合物中的前述單胺(A1)之含量為10莫耳%~65莫耳%。 [3] The light-emitting device according to [2], wherein the monoamine (A1) in the mixture is based on the total of the monoamine (A1), the monoamine (A2), and the diamine (A3). The content is from 10 mol% to 65 mol%.

[4]如[2]或[3]記載之發光裝置,其中以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計為基準,前述混合物中的前述單胺(A2)之含量為5莫耳%~50莫耳%。 [4] The light-emitting device according to [2], wherein the monoamine in the mixture is based on the total of the monoamine (A1), the monoamine (A2), and the diamine (A3). The content of (A2) is from 5 mol% to 50 mol%.

[5]如[2]~[4]中任一項記載之發光裝置,其中以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計為基準,前述混合物中的前述二胺(A3)之含量為15莫耳%~50莫耳%。 [5] The light-emitting device according to any one of [2], wherein, in the mixture, the total of the monoamine (A1), the monoamine (A2), and the diamine (A3) are used as a reference. The content of the aforementioned diamine (A3) is from 15 mol% to 50 mol%.

[6]如[2]~[5]中任一項記載之發光裝置,其中相對於前述銀化合物(B)之銀原子1莫耳,前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計量為1莫耳~20莫耳。 [6] The light-emitting device according to any one of [2], wherein the monoamine (A1) and the monoamine (A2) and the silver atom of the silver compound (B) are 1 mol. The total amount of the above diamines (A3) is from 1 mole to 20 moles.

[7]如[1]記載之發光裝置,其中前述混合物包含作為前述胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、及由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2),以前述單胺(A1)與前述單胺(A2)之合計為基準,係以5莫耳%以上且小於20莫耳%之比例包含前述單胺(A1),及以超過80莫耳%且95莫耳%以下之比例包含前述單胺(A2)。 [7] The light-emitting device according to [1], wherein the mixture contains an aliphatic hydrocarbon monoamine (A1) having 6 or more carbon atoms and an aliphatic group and an amine group as the amine (A), and The aliphatic hydrocarbon monoamine (A2) having 5 or less carbon atoms and having an aliphatic hydrocarbon group and one amine group is 5 mol based on the total of the monoamine (A1) and the monoamine (A2). The ratio of % or more and less than 20 mol% includes the aforementioned monoamine (A1), and the aforementioned monoamine (A2) is contained in a ratio of more than 80 mol% and 95 mol% or less.

[8]如[7]記載之發光裝置,其中相對於前述銀化合物(B)之銀原子1莫耳,前述單胺(A1)與前述單胺(A2)之合計量為1莫耳~72莫耳。 [8] The light-emitting device according to [7], wherein the total amount of the monoamine (A1) and the monoamine (A2) is 1 mol to 72 with respect to 1 mol of the silver atom of the silver compound (B). Moor.

[9]如[1]記載之發光裝置,其中前述混合物包含作為前述胺(A)之由碳數4以上的分支脂肪族烴基與1個胺基所成之分支脂肪族烴單胺(A4)。 [9] The light-emitting device according to [1], wherein the mixture contains a branched aliphatic hydrocarbon monoamine (A4) which is a branched aliphatic hydrocarbon group having 4 or more carbon atoms and an amine group as the amine (A). .

[10]如[9]記載之發光裝置,其中相對於前述銀化合物(B)之銀原子1莫耳,前述單胺(A4)之量為1莫耳~15莫耳。 [10] The light-emitting device according to [9], wherein the amount of the monoamine (A4) is from 1 mol to 15 mol with respect to 1 mol of the silver atom of the silver compound (B).

[11]如[9]或[10]記載之發光裝置,其中相對於胺(A)之全量(100莫耳%),單胺(A4)之比例為80莫耳~100莫耳%。 [11] The light-emitting device according to [9] or [10] wherein the ratio of the monoamine (A4) is from 80 mol to 100 mol% with respect to the total amount of the amine (A) (100 mol%).

[12]如[1]~[11]中任一項記載之發光裝置,其中前述銀化合物(B)係草酸銀。 [12] The light-emitting device according to any one of [1], wherein the silver compound (B) is silver oxalate.

[13]如[1]~[12]中任一項記載之發光裝置,其中前述混合物更包含脂肪族羧酸(C)。 [13] The light-emitting device according to any one of [1] to [12] wherein the mixture further comprises an aliphatic carboxylic acid (C).

[14]如[13]記載之發光裝置,其中相對於前述銀化合物(B)之銀原子1莫耳,前述脂肪族羧酸(C)之使用量為0.05莫耳~10莫耳。 [14] The light-emitting device according to [13], wherein the aliphatic carboxylic acid (C) is used in an amount of from 0.05 mol to 10 mol based on 1 mol of the silver atom of the silver compound (B).

[15]如[1]~[14]中任一項記載之發光裝置,其中前述銀奈米粒子之平均粒徑為0.5nm~100nm。 [15] The light-emitting device according to any one of [1], wherein the silver nanoparticles have an average particle diameter of 0.5 nm to 100 nm.

[16]如[1]~[15]中任一項記載之發光裝置,其中前述光半導體元件及前述電路圖案之全部或一部分係經透明保護材料所被覆。 [16] The light-emitting device according to any one of [1], wherein all or a part of the optical semiconductor element and the circuit pattern are covered with a transparent protective material.

[17]如[16]記載之發光裝置,其中前述保護材料係由環氧系樹脂、矽氧系樹脂、丙烯酸系樹脂、碳酸酯系樹脂、降烯系樹脂、環烯烴系樹脂及聚醯胺樹脂中選出的一個以上之材料所構成。 [17] The light-emitting device according to [16], wherein the protective material is an epoxy resin, a siloxane resin, an acrylic resin, a carbonate resin, or a lowering One or more materials selected from the group consisting of an olefin resin, a cycloolefin resin, and a polyamide resin.

[18]一種發光裝置之製造方法,其係前述發光裝置之製造方法,其包含:於絕緣基板上塗布包含銀奈米粒子的組成物之步驟(a);使前述組成物中所含有的銀奈米粒子燒結之步驟(b);於前述絕緣基板上搭載光半導體元件之步驟(c);電性及/或熱地連接前述光半導體元件與電路圖案之步驟(d);及,以覆蓋前述電路圖案的方式形成保護材料之步驟(e)。 [18] A method of producing a light-emitting device, comprising: a step (a) of applying a composition containing silver nanoparticles on an insulating substrate; and a silver contained in the composition. a step (b) of sintering the nanoparticle; a step (c) of mounting the optical semiconductor element on the insulating substrate; a step (d) of electrically and/or thermally connecting the optical semiconductor element and the circuit pattern; and The step (e) of forming the protective material in the manner of the aforementioned circuit pattern.

[19]如[18]記載之發光裝置之製造方法,其中同時進行步驟(b)及前述步驟(d)。 [19] The method for producing a light-emitting device according to [18], wherein the step (b) and the step (d) are simultaneously performed.

依照本發明時,製造過程中的光半導體元件之劣化被抑制,可得到具有導電性或熱傳導性優異的電路圖案之發光裝置。又,可不對光半導體元件造成熱傷害,而簡便且安定地製造發光裝置。由於本發明之發光裝置中的電路圖案,係藉由使特定的銀奈米粒子燒結而形成者,且係在不施予鍍敷加工或蝕刻加工下形成在光澤面者,因此本發明的發光裝置之製造方法,製造效率優異。而且,由該製造方法所得的本發明之發光裝置,具有所發出的光度高等優異之品質。 According to the present invention, deterioration of the optical semiconductor element in the manufacturing process is suppressed, and a light-emitting device having a circuit pattern excellent in conductivity or thermal conductivity can be obtained. Further, the light-emitting device can be easily and stably manufactured without causing thermal damage to the optical semiconductor element. Since the circuit pattern in the light-emitting device of the present invention is formed by sintering specific silver nanoparticles, and is formed on a glossy surface without applying plating or etching, the light of the present invention The manufacturing method of the device is excellent in manufacturing efficiency. Further, the light-emitting device of the present invention obtained by the production method has a quality superior in luminosity emitted.

1‧‧‧光半導體元件 1‧‧‧Optical semiconductor components

2‧‧‧電路圖案 2‧‧‧ circuit pattern

3‧‧‧包含銀奈米粒子的組成物 3‧‧‧Composition containing silver nanoparticles

4‧‧‧絕緣基板 4‧‧‧Insert substrate

5‧‧‧導電性糊 5‧‧‧ Conductive paste

6‧‧‧接合線 6‧‧‧bonding line

7‧‧‧保護材料 7‧‧‧Protective materials

第1圖係顯示本發明之發光裝置及其製造方法的實施態樣之一例。(a)至(e)係顯示本發明之發光裝置的各製造步驟中之截面圖(概略截面圖)。 Fig. 1 is a view showing an example of an embodiment of a light-emitting device and a method of manufacturing the same according to the present invention. (a) to (e) are cross-sectional views (schematic cross-sectional views) showing the respective manufacturing steps of the light-emitting device of the present invention.

第2圖係顯示本發明之發光裝置及其製造方法的實施態樣之一例。(a)至(e)係顯示本發明之發光裝置的各製造步驟中之截面圖(概略截面圖)。 Fig. 2 is a view showing an example of an embodiment of a light-emitting device and a method of manufacturing the same according to the present invention. (a) to (e) are cross-sectional views (schematic cross-sectional views) showing the respective manufacturing steps of the light-emitting device of the present invention.

第3圖係顯示本發明之發光裝置及其製造方法的實施態樣之一例。(a)至(e)係顯示本發明之發光裝置的各製造步驟中之截面圖(概略截面圖)。 Fig. 3 is a view showing an example of an embodiment of a light-emitting device and a method of manufacturing the same according to the present invention. (a) to (e) are cross-sectional views (schematic cross-sectional views) showing the respective manufacturing steps of the light-emitting device of the present invention.

實施發明的形態Form of implementing the invention

以下,例示說明實施本發明用的形態,惟本發明不受此等所限定。 Hereinafter, the form for carrying out the invention will be exemplified, but the invention is not limited thereto.

<發光裝置> <Lighting device>

本發明之發光裝置係具有光半導體元件、電路圖案及絕緣基板之發光裝置,其中前述光半導體元件與前述電路圖案係電性及/或熱地連接,且前述電路圖案係設於前述絕緣基板之上,且前述電路圖案係藉由使銀奈米粒子燒結而形成,且前述銀奈米粒子係將包含具有脂肪族烴基及胺基的胺(A)以及銀化合物(B)之混合物予以熱分解而得的銀奈米粒子(亦稱為「本發明之銀奈米粒子」)。 The light-emitting device of the present invention is a light-emitting device having an optical semiconductor element, a circuit pattern, and an insulating substrate, wherein the optical semiconductor element is electrically and/or thermally connected to the circuit pattern, and the circuit pattern is provided on the insulating substrate. And the circuit pattern is formed by sintering silver nanoparticle, and the silver nanoparticle is thermally decomposed by a mixture comprising an amine (A) having an aliphatic hydrocarbon group and an amine group and a silver compound (B). The obtained silver nanoparticle (also referred to as "the silver nanoparticle of the present invention").

[光半導體元件] [Optical Semiconductor Components]

作為本發明之發光裝置中的光半導體元件,只要是藉由通電而發光者,則沒有特別的限定,例如可舉出發光二極體(LED,Light Emitting Diode)等之光半導體元件。本發明之發光裝置中的光半導體元件係具有端子,可使用任意的金屬作為形成該端子之材料,例如可使用金、銀、銅或鋁、或彼等之合金。於前述任意的金屬之中,從接合性或耐氧化性之觀點來看,較佳為金或金合金、或表面經金或金合金所被覆之金屬。作為形成前述端子之材料,亦可使用包含銀奈米粒子的組成物(即,前述端子可為使前述銀奈米粒子燒結而形成者)。 The optical semiconductor element in the light-emitting device of the present invention is not particularly limited as long as it emits light by being energized, and examples thereof include an optical semiconductor element such as a light emitting diode (LED). The optical semiconductor element in the light-emitting device of the present invention has a terminal, and any metal can be used as a material for forming the terminal. For example, gold, silver, copper or aluminum, or an alloy thereof can be used. Among the above-mentioned metals, from the viewpoint of adhesion or oxidation resistance, gold or a gold alloy or a metal whose surface is coated with gold or a gold alloy is preferable. As the material for forming the terminal, a composition containing silver nanoparticles may be used (that is, the terminal may be formed by sintering the silver nanoparticles).

[絕緣基板] [Insulating substrate]

作為本發明之發光裝置中的絕緣基板,只要是具有電絕緣性的平板等,則沒有特別的限定,例如可舉出玻璃製基板;使含有環氧樹脂或矽氧樹脂等之硬化性樹脂的玻璃布基材(預浸物)硬化而得之積層板,如聚 醯亞胺系薄膜之耐熱性塑膠基板;聚對苯二甲酸乙二酯(PET)薄膜、聚萘二甲酸乙二酯(PEN)薄膜等之聚酯系薄膜、聚丙烯等之聚烯烴系薄膜等的耐熱性低之泛用塑膠基板;陶瓷板;以樹脂或混入有無機填料的樹脂或陶瓷等將表面絕緣處理之金屬板等。 The insulating substrate in the light-emitting device of the present invention is not particularly limited as long as it is an electrically insulating flat plate or the like, and examples thereof include a glass substrate and a curable resin containing an epoxy resin or a silicone resin. A laminated sheet of a glass cloth substrate (prepreg) hardened, such as a poly a heat-resistant plastic substrate of a bismuth imide film; a polyester film such as a polyethylene terephthalate (PET) film or a polyethylene naphthalate (PEN) film, or a polyolefin film such as polypropylene A general-purpose plastic substrate having a low heat resistance, a ceramic plate, a metal plate in which a surface is insulated by a resin or a resin or ceramic in which an inorganic filler is mixed.

[電路圖案] [circuit pattern]

本發明之發光裝置中的電路圖案,係與光半導體元件電性及/或熱地連接,且設於絕緣基板之上。本發明之發光裝置中的電路圖案,係藉由使本發明之銀奈米粒子燒結而形成。具體而言,作為形成本發明之發光裝置中的前述電路圖案用之材料,係使用本發明之包含銀奈米粒子的組成物。詳細而言,將前述組成物以所欲的圖案塗布在前述絕緣基板上,其次藉由加熱而使前述組成物中的本發明之銀奈米粒子燒結,形成前述電路圖案。 The circuit pattern in the light-emitting device of the present invention is electrically and/or thermally connected to the optical semiconductor element and is provided on the insulating substrate. The circuit pattern in the light-emitting device of the present invention is formed by sintering the silver nanoparticles of the present invention. Specifically, as a material for forming the above-described circuit pattern in the light-emitting device of the present invention, the composition containing the silver nanoparticle of the present invention is used. Specifically, the composition is applied onto the insulating substrate in a desired pattern, and then the silver nanoparticles of the present invention in the composition are sintered by heating to form the circuit pattern.

(包含銀奈米粒子的組成物) (constituent composition of silver nanoparticles)

作為本發明之發光裝置中使用之包含銀奈米粒子的組成物,例如可舉出由發揮導電性或熱傳導性的成分之多數的銀奈米粒子(本發明之銀奈米粒子)、與用於將該銀奈米粒子保持在分散狀態之有機溶劑或分散劑所構成之構成。前述組成物係沒有特別的限制,可採取各種形態。例如,藉由使本發明之銀奈米粒子在適當的有機溶劑(分散介質)中以懸浮狀態分散,可製作所謂稱為銀印墨的銀塗料組成物。或者,藉由使本發明之銀奈米粒子在有機溶劑中以混煉之狀態分散,可製作所謂稱 為銀糊的銀塗料組成物。作為得到前述銀塗料組成物用之有機溶劑,並沒有特別的限定,但例如可舉出戊烷、己烷、庚烷、辛烷、壬烷、癸烷、十一烷、十二烷、十三烷、十四烷等之脂肪族烴溶劑,甲苯、二甲苯、均三甲苯等之芳香族烴溶劑,甲醇、乙醇、丙醇、正丁醇、正戊醇、正己醇、正庚醇、正辛醇、正壬醇、正癸醇、萜品醇等之醇溶劑等。可按照所欲的銀塗料組成物之濃度或黏性,適宜決定有機溶劑的種類或量。於併用後述的其它金屬之奈米粒子、銀複合物之奈米粒子等時亦同。 Examples of the composition containing the silver nanoparticles used in the light-emitting device of the present invention include silver nanoparticles (the silver nanoparticles of the present invention) which are mostly composed of components exhibiting conductivity or thermal conductivity. The silver nanoparticle is composed of an organic solvent or a dispersing agent in a dispersed state. The above composition is not particularly limited and can take various forms. For example, a silver coating composition called a silver ink can be produced by dispersing the silver nanoparticles of the present invention in a suspended state in a suitable organic solvent (dispersion medium). Alternatively, by dispersing the silver nanoparticles of the present invention in an organic solvent in a state of kneading, a so-called weigh A silver coating composition of silver paste. The organic solvent used for obtaining the silver coating composition is not particularly limited, and examples thereof include pentane, hexane, heptane, octane, decane, decane, undecane, dodecane, and ten. An aliphatic hydrocarbon solvent such as trioxane or tetradecane; an aromatic hydrocarbon solvent such as toluene, xylene or mesitylene; methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, n-heptanol, An alcohol solvent such as n-octanol, n-nonanol, n-nonanol or terpineol. The type or amount of the organic solvent can be appropriately determined depending on the concentration or viscosity of the desired silver coating composition. The same applies to the other metal nanoparticles described later, the nano particles of the silver composite, and the like.

本發明之銀奈米粒子之平均粒徑係沒有特別的限定,但較佳為0.5nm~100nm,更佳為0.5nm~50nm,再更佳為0.5nm~25nm,特佳為0.5nm~10nm。 The average particle diameter of the silver nanoparticles of the present invention is not particularly limited, but is preferably 0.5 nm to 100 nm, more preferably 0.5 nm to 50 nm, still more preferably 0.5 nm to 25 nm, and particularly preferably 0.5 nm to 10 nm. .

本發明之銀奈米粒子係將包含具有脂肪族烴基及胺基的胺(A)(亦僅稱「胺(A)」)以及銀化合物(B)之混合物(亦僅稱「混合物」)予以熱分解(具體而言,將該混合物中的銀化合物(B)予以熱分解)而得之銀奈米粒子。本發明之銀奈米粒子係呈表面經包含胺(A)的保護劑所被覆之狀態,其係安定性優異,且藉由在低於200℃(例如150℃以下,較佳為120℃以下)之低溫且2小時以下(例如1小時以下,較佳為30分鐘以下)的短時間之燒結,即使形成例如1μm以上之比較之下為厚膜的銀被膜時,也可展現優異的導電性(低電阻值)之銀奈米粒子。 The silver nanoparticle of the present invention comprises a mixture of an amine (A) having an aliphatic hydrocarbon group and an amine group (also referred to as "amine (A)") and a silver compound (B) (also referred to as "mixture"). Silver nanoparticle obtained by thermal decomposition (specifically, thermal decomposition of the silver compound (B) in the mixture). The silver nanoparticle of the present invention is in a state in which the surface is covered with a protective agent containing an amine (A), and is excellent in stability, and is lower than 200 ° C (for example, 150 ° C or lower, preferably 120 ° C or lower). In the short-time sintering at a low temperature of 2 hours or less (for example, 1 hour or less, preferably 30 minutes or less), excellent conductivity can be exhibited even when a silver film having a thick film of, for example, 1 μm or more is formed. (low resistance) silver nanoparticles.

前述包含銀奈米粒子的組成物,可使用將前述混合物予以熱分解而得之銀奈米粒子(本發明之銀奈米粒子)透過習知慣用之方法而得,並沒有特別的限定, 但例如可對前述所得之銀奈米粒子,按照需要進行洗淨等後,藉由慣用的方法使在有溶劑中懸浮、分散等而得。 The composition containing the silver nanoparticles may be obtained by a conventionally known method using a silver nanoparticle obtained by thermally decomposing the mixture (the silver nanoparticle of the present invention), and is not particularly limited. For example, the silver nanoparticles obtained as described above may be washed or the like in a solvent, or may be suspended or dispersed in a solvent by a conventional method.

1.胺(A) 1. Amine (A)

作為形成本發明之銀奈米粒子時所使用的胺(A),只要是具有脂肪族烴基及胺基者,則可使用習知慣用的胺(胺化合物)。前述脂肪族烴基中,包含直鏈或支鏈狀的脂肪族烴基及環狀的脂肪族烴基。又,前述各脂肪族烴基中,包含飽和脂肪族烴基及不飽和脂肪族烴基。再者,前述胺基中,包含一級胺基、二級胺基、三級胺基。以下,例示在形成本發明之銀奈米粒子時所使用的胺(A)之具體態樣作為胺之實施態樣1~3,但胺(A)不受此等態樣所限定。 The amine (A) used in forming the silver nanoparticles of the present invention may be a conventionally used amine (amine compound) as long as it has an aliphatic hydrocarbon group and an amine group. The aliphatic hydrocarbon group contains a linear or branched aliphatic hydrocarbon group and a cyclic aliphatic hydrocarbon group. Further, each of the aliphatic hydrocarbon groups includes a saturated aliphatic hydrocarbon group and an unsaturated aliphatic hydrocarbon group. Further, the amine group includes a primary amino group, a secondary amino group, and a tertiary amine group. Hereinafter, specific examples of the amine (A) used in forming the silver nanoparticles of the present invention are exemplified as the embodiment 1 to 3 of the amine, but the amine (A) is not limited by these aspects.

[胺的實施態樣1] [Implementation of Amine 1]

作為前述胺(A),可舉出至少使用由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)(亦僅稱「單胺(A1)」)、由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2)(亦僅稱「單胺(A2)」)、及由脂肪族烴基與2個胺基所成之碳數8以下的脂肪族烴二胺(A3)(亦僅稱「二胺(A3)」)之態樣。即,作為前述混合物之一態樣,可舉出至少包含單胺(A1)、單胺(A2)及二胺(A3)之混合物當作前述胺(A)。 The amine (A) is an aliphatic hydrocarbon monoamine (A1) (also referred to simply as "monoamine (A1)") having at least 6 or more carbon atoms formed from an aliphatic hydrocarbon group and one amine group. An aliphatic hydrocarbon monoamine (A2) having a carbon number of 5 or less formed of an aliphatic hydrocarbon group and one amine group (also referred to as "monoamine (A2)"), and an aliphatic hydrocarbon group and two amine groups The aspect of the aliphatic hydrocarbon diamine (A3) having a carbon number of 8 or less (also referred to as "diamine (A3)"). That is, as one aspect of the above mixture, a mixture containing at least a monoamine (A1), a monoamine (A2), and a diamine (A3) may be mentioned as the above amine (A).

再者,於不妨礙本發明的效果之範圍內,在該態樣(胺的實施態樣1)中,可使用前述單胺(A1)、前述單胺(A2)、前述二胺(A3)以外之胺等。 Further, in the aspect (the embodiment 1 of the amine), the monoamine (A1), the monoamine (A2), and the diamine (A3) may be used without departing from the effects of the present invention. Other than amines.

前述單胺(A1)係構成該單胺(A1)的碳原子之 總數(碳數)為6以上之單胺。前述單胺(A1)係因其烴鏈而對所生成的銀奈米粒子表面具有作為保護劑(安定化劑)之高機能。作為前述單胺(A1),較佳可舉出碳數6~12的烷基單胺。前述單胺(A1)中,包含一級胺、二級胺及三級胺。 The aforementioned monoamine (A1) constitutes a carbon atom of the monoamine (A1) The total number (carbon number) is 6 or more monoamine. The monoamine (A1) has a high function as a protective agent (stabilizing agent) on the surface of the produced silver nanoparticles due to its hydrocarbon chain. The monoamine (A1) is preferably an alkyl monoamine having 6 to 12 carbon atoms. The aforementioned monoamine (A1) contains a primary amine, a secondary amine, and a tertiary amine.

作為一級胺之單胺(A1),例如可舉出己胺、 庚胺、辛胺、壬胺、癸胺、十一胺、十二胺、十三胺、十四胺、十五胺、十六胺、十七胺、十八胺等之飽和脂肪族烴單胺(即烷基單胺)。作為飽和脂肪族烴單胺,除了上述之直鏈脂肪族烴單胺,例如還可舉出異己胺、2-乙基己胺、第三辛胺等之分支(分枝)脂肪族烴單胺。又,亦可舉出環己胺等之環烷基單胺。再者,可舉出油胺等的不飽和脂肪族烴單胺(即烯基單胺)。 The monoamine (A1) as the primary amine may, for example, be hexylamine. Saturated aliphatic hydrocarbons of heptylamine, octylamine, decylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentaamine, hexadecylamine, heptadecylamine, octadecylamine, etc. Amine (ie alkyl monoamine). As the saturated aliphatic hydrocarbon monoamine, in addition to the above-mentioned linear aliphatic hydrocarbon monoamine, for example, branched (branched) aliphatic hydrocarbon monoamines such as isohexylamine, 2-ethylhexylamine, and trioctylamine may be mentioned. . Further, a cycloalkyl monoamine such as cyclohexylamine may also be mentioned. Further, an unsaturated aliphatic hydrocarbon monoamine (i.e., an alkenyl monoamine) such as oleylamine may be mentioned.

作為二級胺之單胺(A1),例如可舉出N,N-二 丙基胺、N,N-二丁基胺、N,N-二戊基胺、N,N-二己基胺、N,N-二庚基胺、N,N-二辛基胺、N,N-二壬基胺、N,N-二癸基胺、N,N-二(十一基)胺、N,N-二(十二基)胺、N-丙基-N-丁基胺等之二烷基單胺。作為三級胺之單胺(A1),例如可舉出三丁胺、三己胺等。 The monoamine (A1) as a secondary amine may, for example, be N,N-di Propylamine, N,N-dibutylamine, N,N-dipentylamine, N,N-dihexylamine, N,N-diheptylamine, N,N-dioctylamine, N, N-didecylamine, N,N-didecylamine, N,N-di(undecyl)amine, N,N-di(dodecyl)amine, N-propyl-N-butylamine A dialkyl monoamine. The monoamine (A1) which is a tertiary amine may, for example, be tributylamine or trihexylamine.

於此等之內,作為單胺(A1),較佳為碳數6 以上的飽和脂肪族烴單胺。藉由使碳數成為6以上,胺基在吸附於銀奈米粒子表面時可確保與其它的銀奈米粒子之間隔,因此防止銀奈米粒子彼此的凝聚之作用升高。碳數之上限係沒有特別的規定,但考慮取得容易度、 燒結時的去除容易度等,通常較佳為碳數18之前的飽和脂肪族烴單胺。特別地,較宜使用己胺、庚胺、辛胺、壬胺、癸胺、十一胺、十二胺等之碳數6~12的烷基單胺。前述單胺(A1)可僅使用1種,也可組合2種以上使用。 Within this, as the monoamine (A1), it is preferably a carbon number of 6 The above saturated aliphatic hydrocarbon monoamine. When the number of carbon atoms is 6 or more, the amine group can be separated from other silver nanoparticles by being adsorbed on the surface of the silver nanoparticles, and thus the effect of preventing aggregation of the silver nanoparticles is increased. There is no special rule on the upper limit of the carbon number, but considering the ease of availability, The ease of removal during sintering and the like are usually preferably a saturated aliphatic hydrocarbon monoamine before the carbon number of 18. In particular, an alkyl monoamine having 6 to 12 carbon atoms such as hexylamine, heptylamine, octylamine, decylamine, decylamine, undecylamine or dodecylamine is preferably used. The monoamine (A1) may be used alone or in combination of two or more.

前述混合物中,前述單胺(A1)係沒有特別的限定,但以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計(100莫耳%)為基準,較佳為包含10莫耳%~65莫耳%。 In the above mixture, the monoamine (A1) is not particularly limited, but is based on the total of the monoamine (A1), the monoamine (A2), and the diamine (A3) (100 mol%). The best contains 10% to 65% by mole.

前述單胺(A2)係由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺。即,前述單胺(A2)係構成該單胺(A2)的碳原子之總數(碳數)為5以下的單胺。與前述單胺(A1)比較下,由於碳鏈長度短,因此判斷為其本身作為保護劑(安定化劑)的機能低,但由於極性比前述單胺(A1)高,因此判斷為對銀化合物(B)的銀之配位能力高,在錯合物形成促進上有效果。又,由於碳鏈長短,因此即使於例如120℃以下或100℃左右以下的低溫下之燒結時,也可以30分鐘以下或20分鐘以下之短時間自銀奈米粒子表面去除,故在所得之銀奈米粒子的低溫燒結上具有效果。 The monoamine (A2) is an aliphatic hydrocarbon monoamine having a carbon number of 5 or less and an aliphatic hydrocarbon group and one amine group. In other words, the monoamine (A2) is a monoamine having a total number of carbon atoms (carbon number) of the monoamine (A2) of 5 or less. In comparison with the above-mentioned monoamine (A1), since the carbon chain length is short, it is judged that the function itself as a protective agent (stabilizing agent) is low, but since the polarity is higher than the above-mentioned monoamine (A1), it is judged to be silver. The compound (B) has a high coordination ability of silver and is effective in promoting the formation of a complex. Moreover, since the carbon chain has a short length, it can be removed from the surface of the silver nanoparticles by a short time of 30 minutes or less or 20 minutes or less, even when it is sintered at a low temperature of, for example, 120 ° C or less or about 100 ° C or less. Silver nano particles have an effect on low temperature sintering.

作為前述單胺(A2),例如可舉出乙胺、正丙胺、異丙胺、正丁胺、異丁胺、第二丁胺、第三丁胺、正戊胺、異戊胺、第三戊胺等之碳數2~5的飽和脂肪族烴單胺(即烷基單胺)。又,例如可舉出N,N-二甲基胺、N,N-二乙基胺、N-甲基-N-丙基胺、N-乙基-N-丙基胺等之二烷基單胺。 Examples of the monoamine (A2) include ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, second butylamine, third butylamine, n-pentylamine, isoamylamine, and third pentane. A saturated aliphatic hydrocarbon monoamine having a carbon number of 2 to 5 such as an amine (i.e., an alkyl monoamine). Further, for example, a dialkyl group such as N,N-dimethylamine, N,N-diethylamine, N-methyl-N-propylamine or N-ethyl-N-propylamine may be mentioned. Monoamine.

於此等之內,作為單胺(A2),較佳為正丁胺、 異丁胺、第二丁胺、第三丁胺、正戊胺、異戊胺、第三戊胺等,特佳為上述丁胺類。前述單胺(A2)可僅使用1種,也可組合2種以上使用。 Within this, as the monoamine (A2), preferably n-butylamine, Isobutylamine, second butylamine, third butylamine, n-pentylamine, isoamylamine, and tertiary pentylamine are particularly preferred as the above butylamines. The monoamine (A2) may be used alone or in combination of two or more.

前述混合物中,前述單胺(A2)係沒有特別的 限定,但以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計(100莫耳%)為基準,較佳為包含5莫耳%~50莫耳%。 In the foregoing mixture, the aforementioned monoamine (A2) is not particularly specific. Although it is limited, it is preferably 5 mol% to 50 mol% based on the total of the monoamine (A1), the monoamine (A2), and the diamine (A3) (100 mol%).

前述二胺(A3)係構成該二胺(A3)的碳原子之 總數(碳數)為8以下之二胺。前述二胺(A3)係對銀化合物(B)的銀之配位能力高,在錯合物形成促進上有效果。 脂肪族烴二胺,一般而言極性比脂肪族烴單胺高,對銀化合物(B)的銀之配位能力高。又,前述二胺(A3)係於錯化合物的熱分解步驟中,具有促進更低溫且短時間下的熱分解之效果,可更有效率地進行銀奈米粒子製造。再者,由於包含前述二胺(A3)的銀奈米粒子之保護被膜極性高,故在包含極性高的溶劑之分散介質中的銀奈米粒子之分散安定性升高。再者,前述二胺(A3)由於碳鏈長度短,因此即使於例如120℃以下或100℃左右以下的低溫下之燒結時,也可以30分鐘以下或20分鐘以下之短時間自銀奈米粒子表面去除,故在所得之銀奈米粒子的銀奈米粒子之低溫且短時間的燒結上具有效果。 The aforementioned diamine (A3) constitutes a carbon atom of the diamine (A3) The total number (carbon number) is 8 or less diamine. The diamine (A3) has a high coordination ability for silver of the silver compound (B) and is effective in promoting formation of a complex compound. The aliphatic hydrocarbon diamine is generally more polar than the aliphatic hydrocarbon monoamine, and has a high coordination ability for silver of the silver compound (B). Further, the diamine (A3) is in the thermal decomposition step of the wrong compound, and has an effect of promoting lower temperature and thermal decomposition in a short period of time, and can more efficiently produce silver nanoparticles. Further, since the protective film of the silver nanoparticles containing the diamine (A3) has a high polarity, the dispersion stability of the silver nanoparticles in the dispersion medium containing a solvent having a high polarity is increased. In addition, since the diamine (A3) has a short carbon chain length, it can be used for a short period of time of 30 minutes or less or 20 minutes or less from silver nanoparticles even when it is sintered at a low temperature of, for example, 120 ° C or lower or about 100 ° C or lower. Since the particle surface is removed, it has an effect on the low-temperature and short-time sintering of the silver nanoparticle of the obtained silver nanoparticle.

作為前述二胺(A3),較佳可舉出碳數2~8的 烷基二胺。作為前述二胺(A3),更具體而言,可舉出乙二胺、N,N-二甲基伸乙二胺、N,N’-二甲基伸乙二胺、N,N- 二乙基伸乙二胺、N,N’-二乙基伸乙二胺、1,3-丙二胺、2,2-二甲基-1,3-丙二胺、N,N-二甲基-1,3-丙二胺、N,N’-二甲基-1,3-丙二胺、N,N-二乙基-1,3-丙二胺、N,N’-二乙基-1,3-丙二胺、1,4-丁二胺、N,N-二甲基-1,4-丁二胺、N,N’-二甲基-1,4-丁二胺、N,N-二乙基-1,4-丁二胺、N,N’-二乙基-1,4-丁二胺、1,5-戊二胺、1,5-二胺基-2-甲基戊烷、1,6-己二胺、N,N-二甲基-1,6-己二胺、N,N’-二甲基-1,6-己二胺、1,7-庚二胺、1,8-辛二胺等。此等皆係2個胺基中的至少1個為一級胺基或二級胺基之碳數(碳總數)8以下的伸烷二胺,對銀化合物(B)的銀之配位能力高,在錯合物形成促進上有效果。 The diamine (A3) is preferably a carbon number of 2 to 8. Alkyl diamine. More specifically, the diamine (A3) may, for example, be ethylenediamine, N,N-dimethylethylenediamine, N,N'-dimethylethylenediamine, N,N- Diethylethylenediamine, N,N'-diethylethylenediamine, 1,3-propanediamine, 2,2-dimethyl-1,3-propanediamine, N,N-dimethyl -1,3-propanediamine, N,N'-dimethyl-1,3-propanediamine, N,N-diethyl-1,3-propanediamine, N,N'-diethyl -1,3-propanediamine, 1,4-butanediamine, N,N-dimethyl-1,4-butanediamine, N,N'-dimethyl-1,4-butanediamine, N,N-diethyl-1,4-butanediamine, N,N'-diethyl-1,4-butanediamine, 1,5-pentanediamine, 1,5-diamino-2 -methylpentane, 1,6-hexanediamine, N,N-dimethyl-1,6-hexanediamine, N,N'-dimethyl-1,6-hexanediamine, 1,7 - heptanediamine, 1,8-octanediamine, and the like. These are all alkylene diamines in which at least one of the two amine groups is a primary amino group or a secondary amine group having a carbon number (total carbon number) of 8 or less, and the silver compounding ability of the silver compound (B) is high. It has an effect on the formation of complex compounds.

於此等之內,作為前述二胺(A3),較佳為N,N- 二甲基伸乙二胺、N,N-二乙基伸乙二胺、N,N-二甲基-1,3-丙二胺、N,N-二乙基-1,3-丙二胺、N,N-二甲基-1,4-丁二胺、N,N-二乙基-1,4-丁二胺、N,N-二甲基-1,6-己二胺等之2個胺基中的1個為一級胺基(-NH2),另1個為三級胺基(-NR1R2)之碳數(碳總數)8以下的伸烷二胺。較佳的伸烷二胺係以下述結構式表示。 Within the above, as the diamine (A3), N,N-dimethylethylenediamine, N,N-diethylethylenediamine, N,N-dimethyl-1, 3-propanediamine, N,N-diethyl-1,3-propanediamine, N,N-dimethyl-1,4-butanediamine, N,N-diethyl-1,4- One of the two amine groups such as butanediamine and N,N-dimethyl-1,6-hexanediamine is a primary amine group (-NH 2 ), and the other one is a tertiary amino group (-NR). 1 R 2 ) The alkylene diamine having a carbon number (total carbon number) of 8 or less. A preferred alkylene diamine is represented by the following structural formula.

R1R2N-R-NH2 R 1 R 2 NR-NH 2

此處,R表示伸烷基,R1及R2可相同或相異,表示烷基。惟,R、R1及R2的碳數之總和為8以下。該伸烷基不包含氧原子或氮原子等之雜原子。又,該烷基不包含氧原子或氮原子等之雜原子。 Here, R represents an alkylene group, and R 1 and R 2 may be the same or different and each represents an alkyl group. However, the sum of the carbon numbers of R, R 1 and R 2 is 8 or less. The alkylene group does not contain a hetero atom such as an oxygen atom or a nitrogen atom. Further, the alkyl group does not contain a hetero atom such as an oxygen atom or a nitrogen atom.

於此等之內,從即使低溫燒結下也可以短時間自銀奈米粒子表面去除之觀點來看,較佳為碳數(碳總 數)6以下的二胺,更佳為碳數(碳總數)5以下的二胺。前述二胺(A3)可僅使用1種,也可組合2種以上使用。 Among these, from the viewpoint of being able to remove the surface of the silver nanoparticles in a short time even under low-temperature sintering, the carbon number (carbon total) is preferred. The diamine having 6 or less is more preferably a diamine having 5 or less carbon atoms (total carbon number). The diamine (A3) may be used alone or in combination of two or more.

前述混合物中,前述二胺(A3)係沒有特別的 限定,但以前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計(100莫耳%)為基準,較佳為包含15莫耳%~50莫耳%。 In the foregoing mixture, the aforementioned diamine (A3) is not particularly specific. Although it is limited, it is preferably 15 mol% to 50 mol% based on the total of the monoamine (A1), the monoamine (A2), and the diamine (A3) (100 mol%).

本發明中的該態樣(胺的實施態樣1)所使用 之前述單胺(A1)、前述單胺(A2)及前述二胺(A3)之合計量,係沒有特別的限定,但相對於原料的前述銀化合物(B)之銀原子1莫耳,彼等胺成分之合計量[(A1)+(A2)+(A3)]較佳為1莫耳~20莫耳左右。相對於前述銀原子1莫耳,前述胺成分之合計量若小於1莫耳,則於胺(A)與銀化合物(B)的錯化合物之生成步驟中,有未轉換至錯化合物的銀化合物(B)殘留之可能性。於其後的熱分解步驟中,有損害銀奈米粒子之均勻性而發生粒子的肥大化,或未熱分解而銀化合物(B)殘留之可能性。為了實質地於無溶劑中製作銀奈米粒子的分散液,較佳為使前述胺成分之合計量例如成為2莫耳左右以上。藉由使前述胺成分之合計量成為2莫耳左右以上,可良好地進行錯化合物的生成步驟及熱分解步驟。關於前述胺成分之合計量的下限,相對於前述銀化合物(B)之銀原子1莫耳,較佳為2莫耳以上,更佳為6莫耳以上。 This aspect of the invention (embodiment 1 of the amine) is used The total amount of the monoamine (A1), the monoamine (A2), and the diamine (A3) is not particularly limited, but is 1 mol per silver atom of the silver compound (B) with respect to the raw material. The total amount of the amine component [(A1) + (A2) + (A3)] is preferably from about 1 mole to about 20 moles. When the total amount of the amine component is less than 1 mol with respect to the silver atom of 1 mol, the silver compound which is not converted to the wrong compound in the step of forming the wrong compound of the amine (A) and the silver compound (B) (B) The possibility of residue. In the subsequent thermal decomposition step, the uniformity of the silver nanoparticles is impaired, and the particles are enlarged or the silver compound (B) remains without being thermally decomposed. In order to produce a dispersion of silver nanoparticles in a solvent-free manner, it is preferred that the total amount of the amine components be, for example, about 2 mol or more. By setting the total amount of the amine components to about 2 mol or more, the step of forming a wrong compound and the step of thermally decomposing can be favorably performed. The lower limit of the total amount of the amine component is preferably 2 mol or more, and more preferably 6 mol or more, based on 1 mol of the silver atom of the silver compound (B).

[胺的實施態樣2] [Implementation of Amine 2]

作為前述胺(A)的另一實施態樣,可舉出至少使用由脂肪族烴基與1個胺基所成之碳數6以上的脂肪 族烴單胺(A1)、由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2),以前述單胺(A1)與前述單胺(A2)之合計(100莫耳%)為基準,係以5莫耳%以上且小於20莫耳%(例如5莫耳%以上19莫耳%以下)之比例使用前述單胺(A1),及以超過80莫耳%且95莫耳%以下(例如81莫耳%以上95莫耳%以下)之比例使用前述單胺(A2)之態樣。即,作為前述混合物之一態樣,可舉出包含單胺(A1)及單胺(A2)當作前述胺(A),以單胺(A1)與單胺(A2)之合計(100莫耳%)為基準,係以5莫耳%以上且小於20莫耳%之比例包含單胺(A1)及以超過80莫耳%且95莫耳%以下之比例包含單胺(A2)之混合物。 As another embodiment of the amine (A), at least a carbon having 6 or more carbon atoms derived from an aliphatic hydrocarbon group and one amine group can be used. a hydrocarbon monoamine (A1), an aliphatic hydrocarbon monoamine (A2) having a carbon number of 5 or less formed of an aliphatic hydrocarbon group and one amine group, and a total of the monoamine (A1) and the monoamine (A2) (100% by mole), based on the ratio of 5 mol% or more and less than 20 mol% (for example, 5 mol% or more and 19 mol% or less), the aforementioned monoamine (A1), and more than 80 mol The ratio of the ear % and 95 mol% or less (for example, 81 mol% or more and 95 mol% or less) is the ratio of the aforementioned monoamine (A2). That is, as one aspect of the above mixture, a monoamine (A1) and a monoamine (A2) are contained as the above-mentioned amine (A), and a total of monoamine (A1) and monoamine (A2) (100 mol) Based on the ear %), the monoamine (A1) is contained in a ratio of 5 mol% or more and less than 20 mol%, and the mixture of the monoamine (A2) is contained in a ratio of more than 80 mol% and 95 mol% or less. .

前述單胺(A1)及前述單胺(A2)之使用比例, 以前述單胺(A1)與前述單胺(A2)之合計(100莫耳%)為基準,前述單胺(A1):5莫耳%以上且小於20莫耳%(例如5莫耳%以上19莫耳%以下),及前述單胺(A2):超過80莫耳%且95莫耳%以下(例如81莫耳%以上95莫耳%以下)。再者,於不妨礙本發明的效果之範圍內,在該態樣(胺的實施態樣2)中,可使用前述單胺(A1)或前述單胺(A2)以外之胺等。 The proportion of the aforementioned monoamine (A1) and the aforementioned monoamine (A2), The monoamine (A1): 5 mol% or more and less than 20 mol% (for example, 5 mol% or more) based on the total of the monoamine (A1) and the monoamine (A2) (100 mol%). 19 mol% or less), and the aforementioned monoamine (A2): more than 80 mol% and 95 mol% or less (for example, 81 mol% or more and 95 mol% or less). In addition, in the aspect (the embodiment 2 of the amine), the amine other than the monoamine (A1) or the monoamine (A2) or the like can be used as long as the effect of the present invention is not impaired.

藉由使前述單胺(A1)之含量成為5莫耳%以 上且小於20莫耳%,可因該單胺(A1)之碳鏈而得到所生成的銀奈米粒子表面之保護安定化機能。前述單胺(A1)之含量小於5莫耳%時,保護安定化機能的展現弱。另一方面,前述單胺(A1)之含量為20莫耳%以上時,雖然保護安定化機能充分,但難以藉由形成膜厚比較厚的燒 結膜時之低溫燒結來去除該單胺(A1)。前述單胺(A1)之含量的下限較佳為10莫耳%以上,例如13莫耳%以上。 前述單胺(A1)之含量的上限較佳為19莫耳%以下,例如17莫耳%以下。 By making the content of the aforementioned monoamine (A1) 5 mol% The upper and lower than 20 mol% can obtain the protective stabilization function of the surface of the produced silver nanoparticle due to the carbon chain of the monoamine (A1). When the content of the aforementioned monoamine (A1) is less than 5 mol%, the performance of the protective stabilization function is weak. On the other hand, when the content of the monoamine (A1) is 20 mol% or more, although the protective stabilization function is sufficient, it is difficult to form a relatively thick film by burning. The monoamine (A1) is removed by low temperature sintering at the time of conjunctiva. The lower limit of the content of the monoamine (A1) is preferably 10 mol% or more, for example, 13 mol% or more. The upper limit of the content of the monoamine (A1) is preferably 19 mol% or less, for example, 17 mol% or less.

藉由使前述單胺(A2)之含量成為超過80莫 耳%且95莫耳%以下,可容易得到錯合物形成促進效果,而且其本身亦有助於低溫且短時間燒結。前述單胺(A2)之含量為80莫耳%以下時,錯合物形成促進效果會變弱,或於形成膜厚比較厚的燒結膜之際的燒結時會難以自銀奈米粒子表面去除前述單胺(A1)。另一方面,前述單胺(A2)之含量若超過95莫耳%,雖然可得到錯合物形成促進效果,但相對地前述單胺(A1)之含量變少,難以得到所生成的銀奈米粒子表面之保護安定化。前述單胺(A2)之含量的下限較佳為81莫耳%以上,例如83莫耳%以上。前述單胺(A2)之含量的上限較佳為90莫耳%以下,例如87莫耳%以下。 By making the content of the aforementioned monoamine (A2) more than 80 The ear % and 95% by mole or less can easily obtain a complex formation promoting effect, and itself contributes to low temperature and short time sintering. When the content of the monoamine (A2) is 80 mol% or less, the effect of promoting the formation of the complex is weak, or it may be difficult to remove from the surface of the silver nanoparticles when sintering is performed on a sintered film having a relatively thick film thickness. The aforementioned monoamine (A1). On the other hand, when the content of the monoamine (A2) exceeds 95 mol%, a complex formation promoting effect can be obtained, but the content of the monoamine (A1) is relatively small, and it is difficult to obtain the produced silver naphthalene. The protection of the surface of the rice particles is stable. The lower limit of the content of the monoamine (A2) is preferably 81 mol% or more, for example, 83 mol% or more. The upper limit of the content of the monoamine (A2) is preferably 90 mol% or less, for example, 87 mol% or less.

於本發明的該態樣(胺的實施態樣2)中,由於 是以前述比例來使用對銀化合物(B)的銀之配位能力高的前述單胺(A2),故前述單胺(A1)對銀奈米粒子表面上的附著量少即可足。因此,即使前述低溫短時間下的燒結時,也容易自銀奈米粒子表面去除此等胺類,銀奈米粒子的燒結係充分地進行。 In this aspect of the invention (embodiment 2 of the amine), Since the monoamine (A2) having a high coordination ability for silver of the silver compound (B) is used in the above ratio, the amount of adhesion of the monoamine (A1) to the surface of the silver nanoparticles is small. Therefore, even in the case of sintering at a low temperature for a short period of time, it is easy to remove these amines from the surface of the silver nanoparticles, and the sintering of the silver nanoparticles is sufficiently performed.

本發明中的該態樣(胺的實施態樣2)所使用 之前述單胺(A1)與前述單胺(A2)之合計量,係沒有特別的限定,但相對於前述銀化合物(B)之銀原子1莫耳,前 述胺[(A1)+(A2)]之量可為1莫耳~72莫耳左右。相對於前述銀原子1莫耳,前述胺[(A1)+(A2)]之量若小於1莫耳,則於錯化合物之生成步驟中,有未轉換至錯化合物的銀化合物(B)殘留的可能性,於其後的熱分解步驟中,有損害銀奈米粒子之均勻性而發生粒子的肥大化,或未熱分解而銀化合物(B)殘留之可能性。另一方面,判斷相對於前述銀原子1莫耳,即使前述胺[(A1)+(A2)]之量超過72莫耳左右,也沒有什麼優點。為了實質地於無溶劑中製作銀奈米粒子的分散液,可使前述胺[(A1)+(A2)]之量例如成為2莫耳左右以上。藉由使前述胺[(A1)+(A2)]之量成為2~72莫耳左右,可良好地進行錯化合物的生成步驟及熱分解步驟。關於前述胺[(A1)+(A2)]之量的下限,相對於前述銀化合物(B)之銀原子1莫耳,較佳為2莫耳以上,更佳為6莫耳以上,再更佳為10莫耳以上。 This aspect of the invention (embodiment 2 of the amine) is used The total amount of the monoamine (A1) and the monoamine (A2) is not particularly limited, but is 1 mol with respect to the silver atom of the silver compound (B). The amount of the amine [(A1) + (A2)] may be from about 1 mole to about 72 moles. When the amount of the amine [(A1) + (A2)] is less than 1 mol with respect to the silver atom of 1 mol, the silver compound (B) remaining in the wrong compound is not converted to the wrong compound. In the subsequent thermal decomposition step, there is a possibility that the uniformity of the silver nanoparticles is impaired, the particles are enlarged, or the silver compound (B) remains without being thermally decomposed. On the other hand, it is judged that there is no advantage even if the amount of the above amine [(A1) + (A2)] exceeds about 72 mol with respect to the above-mentioned silver atom of 1 mol. In order to produce a dispersion of silver nanoparticles in a solvent-free manner substantially, the amount of the amine [(A1) + (A2)] can be, for example, about 2 mol or more. By setting the amount of the above amine [(A1) + (A2)] to about 2 to 72 moles, the step of forming a wrong compound and the step of thermally decomposing can be favorably performed. The lower limit of the amount of the above amine [(A1) + (A2)] is preferably 2 mol or more, more preferably 6 mol or more, more preferably 6 mol or more, relative to the silver atom of the silver compound (B). Good for more than 10 moles.

於本發明的該態樣(胺的實施態樣2)中,亦可更使用前述二胺(A3)。 In the aspect of the invention (the embodiment 2 of the amine), the aforementioned diamine (A3) may be further used.

[胺的實施態樣3] [Example 3 of the amine]

作為前述胺(A)的其它實施態樣,可舉出至少使用由碳數4以上的分支脂肪族烴基與1個胺基所成之分支脂肪族烴單胺(A4)(亦僅稱「單胺(A4)」)的態樣。即,作為前述混合物之一態樣,可舉出包含單胺(A4)的混合物當作前述胺(A)。若使用分支脂肪族烴胺化合物,則相較於使用相同碳數的直鏈脂肪族烴胺化合物之情況,其會因分支脂肪族烴基的立體因素而可對銀奈米粒子表面 上以較少的附著量被覆銀奈米粒子表面的更大面積。因此,可藉由對銀奈米粒子表面上的較少附著量,而得到銀奈米粒子的適度安定化。此時,由於在燒結時應去除的保護劑(有機安定劑)之量少,故即使在200℃以下的低溫下燒結時,也可高效率地去除有機安定劑,銀奈米粒子的燒結係充分地進行。 As another embodiment of the amine (A), at least a branched aliphatic hydrocarbon monoamine (A4) composed of a branched aliphatic hydrocarbon group having 4 or more carbon atoms and one amine group may be used (also referred to as "single" The aspect of the amine (A4)"). That is, as one aspect of the above mixture, a mixture containing a monoamine (A4) may be mentioned as the above amine (A). If a branched aliphatic hydrocarbon amine compound is used, it can be used for the surface of the silver nanoparticles due to the steric factor of the branched aliphatic hydrocarbon group as compared with the case of using the linear aliphatic hydrocarbon amine compound having the same carbon number. A larger area of the surface of the silver nanoparticles is coated with less adhesion. Therefore, moderate stabilization of the silver nanoparticle can be obtained by less adhesion to the surface of the silver nanoparticles. In this case, since the amount of the protective agent (organic stabilizer) to be removed at the time of sintering is small, the organic stabilizer can be efficiently removed even when sintered at a low temperature of 200 ° C or lower, and the sintering system of the silver nanoparticles is performed. Fully proceed.

前述單胺(A4)中的分支脂肪族烴基之碳數為 4以上,例如4~16。為了得到分支脂肪族烴基之立體因素,必須為碳數4以上。作為前述單胺(A4),例如可舉出異丁胺、第二丁胺、第三丁胺、異戊胺、第三戊胺、異己胺、2-乙基己基胺、第三辛胺等之碳數4~16、較佳為碳數4~8的一級胺。 The carbon number of the branched aliphatic hydrocarbon group in the aforementioned monoamine (A4) is 4 or more, for example, 4 to 16. In order to obtain the steric factor of the branched aliphatic hydrocarbon group, it is necessary to have a carbon number of 4 or more. Examples of the monoamine (A4) include isobutylamine, second butylamine, third butylamine, isoamylamine, third pentylamine, isohexylamine, 2-ethylhexylamine, and thixylamine. The primary amine having a carbon number of 4 to 16, preferably 4 to 8 carbon atoms.

又,作為前述單胺(A4),例如可舉出N,N-二 異丁胺、N,N-二異戊胺、N,N-二異己胺、N,N-二(2-乙基己基)胺等之二級胺。又,例如可舉出三異丁胺、三異戊胺、三異己胺、三(2-乙基己基)胺等之三級胺。於N,N-二(2-乙基己基)胺時,2-乙基己基之碳數為8,但前述單胺(A4)中所含有的碳之總數係成為16。於三(2-乙基己基)胺時,前述單胺(A4)中所含有的碳之總數係成為24。 Further, examples of the monoamine (A4) include N, N-di A secondary amine such as isobutylamine, N,N-diisoamylamine, N,N-diisohexylamine or N,N-bis(2-ethylhexyl)amine. Further, for example, a tertiary amine such as triisobutylamine, triisoamylamine, triisohexylamine or tris(2-ethylhexyl)amine can be mentioned. In the case of N,N-bis(2-ethylhexyl)amine, the carbon number of the 2-ethylhexyl group is 8, but the total amount of carbon contained in the monoamine (A4) is 16. In the case of tris(2-ethylhexyl)amine, the total amount of carbon contained in the aforementioned monoamine (A4) is 24.

於此等分支脂肪族烴單胺之內,作為前述單胺(A4),較佳為異戊胺、異己胺、2-乙基己基胺等之主鏈的碳數為4~6之分支烷基單胺化合物。再者,前述所謂的「主鏈」,就是意指前述分支脂肪族烴基中其長度最長之鏈(由碳-碳鍵所構成之鏈)。主鏈之碳數若為4~6,則容易得到銀奈米粒子的適度安定化。又,從分支 脂肪族烴基的立體因素之觀點來看,較有效為在自N原子側起第2個碳原子上分支。前述單胺(A4)可僅使用1種,也可組合2種以上使用。 In the branched aliphatic hydrocarbon monoamine, the monoamine (A4) is preferably a branched alkyl group having 4 to 6 carbon atoms in a main chain such as isoprene, isohexylamine or 2-ethylhexylamine. A monoamine compound. Further, the above-mentioned "main chain" means a chain having the longest length among the branched aliphatic hydrocarbon groups (a chain composed of carbon-carbon bonds). If the carbon number of the main chain is 4 to 6, it is easy to obtain moderate stabilization of the silver nanoparticles. Again, from the branch From the viewpoint of the steric factor of the aliphatic hydrocarbon group, it is more effective to branch on the second carbon atom from the N atom side. The monoamine (A4) may be used alone or in combination of two or more.

本發明中的該態樣(胺的實施態樣3)所使用 的前述單胺(A4)之量,係沒有特別的限定,但相對於原料的前述銀化合物(B)之銀原子1莫耳,較佳為1莫耳~15莫耳左右。相對於前述銀原子1莫耳,前述單胺(A4)之量若小於1莫耳,則於胺(A)與銀化合物(B)的錯化合物之生成步驟中,有未轉換至錯化合物的銀化合物(B)殘留之可能性。又,於其後的熱分解步驟中,有損害銀奈米粒子之均勻性而發生粒子的肥大化,或未熱分解而銀化合物(B)殘留之可能性。為了實質地於無溶劑中製作銀奈米粒子的分散液,較佳為使前述單胺(A4)之量例如成為2莫耳左右以上。藉由使前述單胺(A4)之量成為2莫耳左右以上,可良好地進行錯化合物的生成步驟及熱分解步驟。關於前述單胺(A4)之量的下限,相對於前述銀化合物(B)之銀原子1莫耳,較佳為2莫耳以上,更佳為6莫耳以上。 This aspect of the invention (embodiment 3 of the amine) is used The amount of the monoamine (A4) is not particularly limited, but is preferably from about 1 mol to about 15 mol with respect to 1 mol of the silver atom of the silver compound (B) of the raw material. When the amount of the monoamine (A4) is less than 1 mol with respect to the silver atom of 1 mol, the step of forming the wrong compound of the amine (A) and the silver compound (B) is not converted to the wrong compound. The possibility of residual silver compound (B). Further, in the subsequent thermal decomposition step, there is a possibility that the uniformity of the silver nanoparticles is impaired, the particles are enlarged, or the silver compound (B) remains without being thermally decomposed. In order to produce a dispersion of silver nanoparticles in a solvent-free manner, it is preferred that the amount of the monoamine (A4) is, for example, about 2 mol or more. By setting the amount of the monoamine (A4) to about 2 mol or more, the step of forming a wrong compound and the step of thermally decomposing can be favorably performed. The lower limit of the amount of the monoamine (A4) is preferably 2 mol or more, more preferably 6 mol or more, based on 1 mol of the silver atom of the silver compound (B).

本發明中的該態樣(胺的實施態樣3)所使用 之相對於胺(A)之全量(100莫耳%)而言前述單胺(A4)之比例,係沒有特別的限定,但較佳為80莫耳~100莫耳%,更佳為90莫耳~100莫耳%(例如90莫耳~98莫耳%)。藉由將前述比例控制在如此的數值範圍,有可有效率地製造分散介質中的分散安定性優異之銀奈米粒子,可有效率地進行銀奈米粒子的燒結之傾向。 This aspect of the invention (embodiment 3 of the amine) is used The ratio of the monoamine (A4) to the total amount (100 mol%) of the amine (A) is not particularly limited, but is preferably 80 mol to 100 mol%, more preferably 90 mol. Ears ~100% by mole (eg 90 moles to 98 moles %). By controlling the above ratio within such a numerical range, it is possible to efficiently produce silver nanoparticles having excellent dispersion stability in a dispersion medium, and it is possible to efficiently perform sintering of silver nanoparticles.

本發明中的該態樣(胺的實施態樣3)所使用之作為錯形成劑及/或保護劑機能的脂肪族烴胺化合物,除了使用前述單胺(A4),還可進一步各自個別獨立地使用由前述單胺(A1)、前述單胺(A2)及前述二胺(A3)中選出的脂肪族烴胺化合物。前述單胺(A2)及前述二胺(A3)係在錯合物形成促進上有效果。 The aliphatic hydrocarbon amine compound used as the deforming agent and/or the protective agent function in the aspect of the present invention (the third embodiment of the amine) may be further independently selected in addition to the aforementioned monoamine (A4). An aliphatic hydrocarbon amine compound selected from the foregoing monoamine (A1), the aforementioned monoamine (A2), and the aforementioned diamine (A3) is used. The monoamine (A2) and the aforementioned diamine (A3) are effective in promoting the formation of a complex.

2.銀化合物(B) 2. Silver compound (B)

作為前述銀化合物(B),係使用容易因加熱而分解,生成金屬銀之銀化合物。作為如此的銀化合物,可使用甲酸銀、乙酸銀、草酸銀、丙二酸銀、苯甲酸銀、苯二甲酸銀等之羧酸銀,氟化銀、氯化銀、溴化銀、碘化銀等之鹵化銀,硫酸鹽、硝酸銀、碳酸銀等,但從容易因分解而生成金屬銀且不易發生銀以外的雜質之觀點來看,較宜使用草酸銀。草酸銀係銀含有率高,且不需要還原劑而藉由熱分解直接得到金屬銀,在不易殘留源自還原劑的雜質之點上有利。 As the silver compound (B), a silver compound which is easily decomposed by heating to form metallic silver is used. As such a silver compound, silver carboxylate such as silver formate, silver acetate, silver oxalate, silver malonate, silver benzoate or silver phthalate, silver fluoride, silver chloride, silver bromide, silver iodide or the like can be used. Silver halide, sulfate, silver nitrate, silver carbonate, etc., but silver oxalate is preferably used from the viewpoint of easily forming metal silver by decomposition and not easily generating impurities other than silver. The silver oxalate silver has a high content rate, and it is advantageous to obtain metallic silver directly by thermal decomposition without requiring a reducing agent, and it is difficult to leave impurities derived from the reducing agent.

再者,前述包含銀奈米粒子的組成物,除了包含本發明之銀奈米粒子,還可包含銀以外的金屬(亦稱為「其它金屬」)之奈米粒子、銀與其它金屬的複合物之奈米粒子等其它奈米粒子。此等其它奈米粒子,例如可藉由使用其它金屬的化合物(金屬化合物)代替本發明之銀奈米粒子的製造方法中之銀化合物(B),或與銀化合物(B)一同併用其它金屬之化合物,而予以製造。 Further, the composition containing the silver nanoparticle may include a nanoparticle of a metal other than silver (also referred to as "other metal"), and a composite of silver and other metals, in addition to the silver nanoparticle of the present invention. Other nano particles such as nano particles. These other nanoparticles, for example, can be substituted for the silver compound (B) in the method for producing silver nanoparticles of the present invention by using a compound (metal compound) of another metal, or with other compounds of the silver compound (B). The compound is manufactured.

例如,於製造前述銀以外的其它金屬之奈米粒子時,係使用因加熱而容易分解,生成目的之其它金 屬的金屬化合物,來代替前述的銀化合物(B)。作為如此的金屬化合物,可使用對應於前述銀化合物(B)之金屬的鹽,例如金屬的羧酸鹽,金屬鹵化物,金屬硫酸鹽、金屬硝酸鹽、金屬碳酸鹽等之金屬鹽化合物。於此等之中,從容易因分解而生成金屬且不易發生金屬以外的雜質之觀點來看,較宜使用金屬的草酸鹽。作為其它金屬,可舉出Al、Au、Pt、Pd、Cu、Co、Cr、In及Ni等。 For example, when producing a nanoparticle of a metal other than the above-mentioned silver, it is easy to decompose by heating, and other gold for the purpose of production is used. A metal compound of the genus is substituted for the aforementioned silver compound (B). As such a metal compound, a salt corresponding to the metal of the above-mentioned silver compound (B), for example, a metal salt compound of a metal carboxylate, a metal halide, a metal sulfate, a metal nitrate, a metal carbonate or the like can be used. Among these, it is preferable to use a metal oxalate from the viewpoint that metal is easily formed by decomposition and impurities other than metals are less likely to occur. Examples of the other metal include Al, Au, Pt, Pd, Cu, Co, Cr, In, and Ni.

又,例如,為了得到前述銀與其它金屬之複 合物(亦稱為「銀複合物」)的奈米粒子,亦可併用前述的銀化合物(B)與前述的銀以外之其它金屬化合物。作為其它金屬,可舉出Al、Au、Pt、Pd、Cu、Co、Cr、In及Ni等。銀複合物係由銀與1或2種以上的其它金屬所構成者,可例示Au-Ag、Ag-Cu、Au-Ag-Cu、Au-Ag-Pd等。於前述銀複合物中,並沒有特別的限定,但以金屬全體作為基準,銀至少佔20重量%(即20重量%以上),通常佔50重量%(即50重量%以上),例如佔80重量%(即80重量%以上)。 Also, for example, in order to obtain the aforementioned complexion of silver and other metals The nanoparticle of the compound (also referred to as "silver composite") may be used in combination with the above-mentioned silver compound (B) and other metal compounds other than the above-mentioned silver. Examples of the other metal include Al, Au, Pt, Pd, Cu, Co, Cr, In, and Ni. The silver composite is composed of silver and one or more other metals, and examples thereof include Au-Ag, Ag-Cu, Au-Ag-Cu, and Au-Ag-Pd. The silver composite is not particularly limited, but the silver is at least 20% by weight (that is, 20% by weight or more) based on the entire metal, and usually accounts for 50% by weight (that is, 50% by weight or more), for example, 80%. % by weight (ie 80% by weight or more).

本發明之發光裝置中所使用的銀奈米粒子, 可藉由加熱前述混合物(至少包含胺(A)及銀化合物(B)之混合物)(詳細而言,藉由加熱而將銀化合物(B)熱分解)而生成。前述混合物之調製方法係沒有特別的限定,但例如當使用2種以上的胺(A)時,可藉由調製此等的混合物(胺混合液),然後於其中添加、混合銀化合物(B),而調製前述混合物。銀化合物(B)之添加亦可成批進行,也可逐次進行。逐次進行銀化合物(B)之添加時,可連續地 進行,也可斷續地進行。雖然尚未明朗,但推測係在混合胺(A)與銀化合物(B)之階段中,進行兩者的錯合物形成。 Silver nanoparticles used in the light-emitting device of the present invention, It can be produced by heating the aforementioned mixture (containing at least a mixture of the amine (A) and the silver compound (B)) (specifically, thermally decomposing the silver compound (B) by heating). The preparation method of the above mixture is not particularly limited. For example, when two or more kinds of the amines (A) are used, the mixture (amine mixture) can be prepared, and then the silver compound (B) can be added and mixed therein. And the aforementioned mixture was prepared. The addition of the silver compound (B) may also be carried out in batches or sequentially. When the silver compound (B) is added successively, it can be continuously It can also be carried out intermittently. Although it is not clear, it is presumed that the complex formation of the two is carried out in the stage of mixing the amine (A) with the silver compound (B).

生成銀奈米粒子時的前述混合物之加熱溫度 (熱分解溫度)係沒有特別的限定,但例如可在60~150℃之範圍中適宜設定。例如,使用草酸銀作為銀化合物(B)時,由於可藉由在80~120℃加熱而有效率地進行熱分解,故可以高生產性製造銀奈米粒子。再者,加熱溫度可固定,也可以連續地或斷續地變化之方式來控制。又,加熱前述混合物之時間(加熱時間)係沒有特別的限定,例如可在5~360分鐘之範圍中適宜設定。藉此,得到包含銀奈米粒子的組成物。 Heating temperature of the aforementioned mixture when generating silver nanoparticles The (thermal decomposition temperature) is not particularly limited, and may be appropriately set, for example, in the range of 60 to 150 °C. For example, when silver oxalate is used as the silver compound (B), since it can be thermally decomposed efficiently by heating at 80 to 120 ° C, silver nanoparticles can be produced with high productivity. Further, the heating temperature may be fixed or may be controlled continuously or intermittently. Further, the time (heating time) for heating the mixture is not particularly limited, and may be appropriately set, for example, in the range of 5 to 360 minutes. Thereby, a composition containing silver nanoparticles is obtained.

3.脂肪族羧酸(C) 3. Aliphatic carboxylic acid (C)

本發明中,於調製銀奈米粒子之際,為了進一步提高銀奈米粒子在分散介質中的分散性,亦可更使用脂肪族羧酸(C)作為安定劑。前述脂肪族羧酸(C)可含於前述胺混合液中而使用。藉由使用前述脂肪族羧酸(C),而提高銀奈米粒子之安定性,尤其分散於有機溶劑中的塗料狀態之安定性。 In the present invention, in order to further improve the dispersibility of the silver nanoparticles in the dispersion medium, the aliphatic carboxylic acid (C) may be further used as a stabilizer in the preparation of the silver nanoparticles. The above aliphatic carboxylic acid (C) may be used in the above-mentioned amine mixed liquid. By using the aforementioned aliphatic carboxylic acid (C), the stability of the silver nanoparticles, particularly the stability of the coating state dispersed in an organic solvent, is improved.

作為前述脂肪族羧酸(C),係使用飽和或不飽和的脂肪族羧酸。例如,可舉出丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、十一酸、十二酸、十三酸、十四酸、十五酸、十六酸、十七酸、十八酸、十九酸、二十酸、二十烯酸等之碳數4以上的飽和脂肪族單羧酸,油酸、反油酸、亞麻油酸、棕櫚油酸等之碳數8以上的不飽和脂肪族單羧酸等。 As the aliphatic carboxylic acid (C), a saturated or unsaturated aliphatic carboxylic acid is used. For example, butyric acid, valeric acid, caproic acid, heptanoic acid, caprylic acid, capric acid, capric acid, undecanoic acid, dodecanoic acid, tridecanoic acid, tetradecanoic acid, pentadecanoic acid, palmitic acid, and ten Carbonic acid, oleic acid, linoleic acid, palmitoleic acid, etc. The number of unsaturated aliphatic monocarboxylic acids is 8 or more.

於此等之內,作為前述脂肪族羧酸(C),較佳 為碳數8~18的飽和或不飽和脂肪族單羧酸。藉由使碳數成為8以上,由於在羧酸基吸附於銀奈米粒子表面之際,可確保與其它的銀奈米粒子之間隔,故防止銀奈米粒子彼此的凝聚之作用升高。考慮取得容易度、燒結時的去除容易度等,通常較佳為碳數18之前的飽和或不飽和脂肪族單羧酸。特別地,較宜使用辛酸、油酸等。前述脂肪族羧酸(C)可僅使用1種,也可組合2種以上使用。 Within this, as the aliphatic carboxylic acid (C), it is preferred It is a saturated or unsaturated aliphatic monocarboxylic acid having 8 to 18 carbon atoms. When the number of carbon atoms is 8 or more, since the carboxylic acid group is adsorbed on the surface of the silver nanoparticles, the distance from the other silver nanoparticles can be ensured, so that the effect of preventing aggregation of the silver nanoparticles is increased. In view of ease of availability, ease of removal during sintering, and the like, a saturated or unsaturated aliphatic monocarboxylic acid having a carbon number of 18 or more is usually preferable. In particular, caprylic acid, oleic acid or the like is preferably used. The aliphatic carboxylic acid (C) may be used alone or in combination of two or more.

前述脂肪族羧酸(C)之使用量係沒有特別的 限定,但相對於原料的前述銀化合物(B)之銀原子1莫耳,例如較佳為0.05莫耳~10莫耳,更佳為0.1莫耳~5莫耳,再更佳為0.5莫耳~2莫耳。相對於前述銀原子1莫耳,前述脂肪族羧酸(C)之量若比0.05莫耳還少,則前述脂肪族羧酸(C)之添加所造成分散狀態之安定性提高效果弱。另一方面,前述脂肪族羧酸(C)之量若超過10莫耳,則分散狀態的安定性提高效果會飽和,而且低溫燒結下的前述脂肪族羧酸(C)之去除會變困難。 The amount of the aforementioned aliphatic carboxylic acid (C) used is not particularly It is limited, but is preferably 0.05 mol to 10 mol, more preferably 0.1 mol to 5 mol, and even more preferably 0.5 mol, relative to the silver atom of the silver compound (B) of the raw material. ~2 moor. When the amount of the aliphatic carboxylic acid (C) is less than 0.05 mol with respect to 1 mol of the silver atom, the effect of improving the stability of the dispersed state due to the addition of the aliphatic carboxylic acid (C) is weak. On the other hand, when the amount of the aliphatic carboxylic acid (C) exceeds 10 mol, the effect of improving the stability in a dispersed state is saturated, and removal of the aliphatic carboxylic acid (C) under low-temperature sintering becomes difficult.

本發明之發光裝置中的前述電路圖案,係藉 由使本發明之銀奈米粒子燒結而形成。作為使前述銀奈米粒子燒結之方法,可藉由使金屬奈米粒子燒結而形成金屬的構造體(例如被膜)之習知慣用的方法來實施,並沒有特別的限定,但例如可藉由將本發明之包含銀奈米粒子的組成物以所欲的厚度、形狀(圖案)等塗布在絕緣基板等上,加熱而形成。加熱條件係沒有特別的限定,但藉由使用本發明之銀奈米粒子,可利用以低於200℃ (例如150℃以下,較佳為120℃以下)之低溫且2小時以下(例如1小時以下,較佳為30分鐘以下)之短時間的加熱而燒結。藉由如此的燒結,可形成作為前述電路圖案之銀被膜。由於該銀被膜具有優異的導電性及熱傳導性,故所得之發光裝置(本發明之發光裝置)具有優異的品質。又,因本發明之銀奈米粒子,其緻密且分散性或均勻性高,故不經施予特別的加工而由燒結所得之前述電路圖案,其表面粗糙度Ra小(例如,較佳為1μm以下,更佳為0.1μm以下),具有優異的光澤(例如,其表面為鏡面)。因此,本發明之發光裝置,可以優異的效率進行製造,且具有優異的品質(例如,光度高等)。更具體而言,例如藉由下述之「發光裝置的實施態樣1~3」中記載之方法,可形成前述電路圖案。 The foregoing circuit pattern in the light-emitting device of the present invention is borrowed It is formed by sintering the silver nanoparticles of the present invention. The method of sintering the silver nanoparticles can be carried out by a conventional method of forming a metal structure (for example, a film) by sintering the metal nanoparticles, and is not particularly limited, but for example, The composition containing the silver nanoparticle of the present invention is applied onto an insulating substrate or the like in a desired thickness, shape (pattern) or the like, and heated to form. The heating conditions are not particularly limited, but can be utilized at less than 200 ° C by using the silver nanoparticles of the present invention. (for example, 150 ° C or less, preferably 120 ° C or less), a low temperature and a short time of heating of 2 hours or less (for example, 1 hour or less, preferably 30 minutes or less) is sintered. By such sintering, a silver film as the circuit pattern can be formed. Since the silver film has excellent electrical conductivity and thermal conductivity, the obtained light-emitting device (the light-emitting device of the present invention) has excellent quality. Further, since the silver nanoparticle of the present invention has high density and high dispersibility or uniformity, the circuit pattern obtained by sintering without special processing has a small surface roughness Ra (for example, preferably 1 μm or less, more preferably 0.1 μm or less, has excellent gloss (for example, the surface thereof is a mirror surface). Therefore, the light-emitting device of the present invention can be manufactured with excellent efficiency and has excellent quality (for example, high luminosity, etc.). More specifically, the circuit pattern can be formed by, for example, the method described in the following "Examples 1 to 3 of the light-emitting device".

本發明之發光裝置亦可具有光半導體元件、 電路圖案及絕緣基板以外之構件等。作為前述構件,可舉出眾所習知或慣用的發光裝置所用之構件等,雖並沒有特別的限定,但可舉出被覆前述光半導體元件及前述電路圖案之全部或一部分的保護材料等。保護材料,係為了物理性及/或化學性地保護前述光半導體元件及前述電路圖案而使用,具有例如防止因空氣中的灰塵、水分、氧、腐蝕性氣體等所造成的前述光半導體元件或前述電路圖案之污染或損傷的機能。又,保護材料,具有例如緩和因機械力或熱等的物理負荷所造成的前述光半導體元件或前述電路圖案之劣化或損傷的機能。本發明之發光裝置中設置保護材料之態樣,只要能發揮前述保 護機能之態樣,則沒有特別的限定,可自習知慣用的態樣中適宜選擇。 The light emitting device of the present invention may also have an optical semiconductor component, Circuit patterns and components other than the insulating substrate. The member used for the light-emitting device which is conventionally known or conventionally used is not particularly limited, and examples thereof include a protective material covering the optical semiconductor element and all or a part of the circuit pattern. The protective material is used for physically and/or chemically protecting the optical semiconductor element and the circuit pattern, and has, for example, preventing the optical semiconductor element or the like due to dust, moisture, oxygen, corrosive gas, or the like in the air. The function of contamination or damage of the aforementioned circuit pattern. Further, the protective material has a function of, for example, mitigating deterioration or damage of the optical semiconductor element or the circuit pattern due to a physical load such as mechanical force or heat. The aspect of the protective material is provided in the light-emitting device of the present invention, as long as the above-mentioned protection can be achieved There is no particular limitation on the aspect of the protective function, and it is suitable for the selection of the self-study.

作為前述保護材料,可使用習知慣用的保護材料(密封材),並沒有特別的限定,例如,較宜使用透明保護材料。作為如此的透明保護材料,例如可舉出環氧系樹脂、矽氧系樹脂、丙烯酸系樹脂、碳酸酯系樹脂、降烯系樹脂、環烯烴系樹脂、聚醯胺樹脂等。 As the protective material, a conventional protective material (sealing material) can be used without particular limitation, and for example, a transparent protective material is preferably used. Examples of such a transparent protective material include an epoxy resin, a silicone resin, an acrylic resin, a carbonate resin, and a lowering agent. An olefin resin, a cycloolefin resin, a polyamide resin, or the like.

本發明的發光裝置之製造方法係沒有特別的限定,可依照習知慣用的發光裝置之製造方法來實施。作為前述製造方法,具體而言,例如可舉出包含下述步驟(a)~步驟(e)(步驟(a)、步驟(b)、步驟(c)、步驟(d)及步驟(e))作為必要步驟之方法等。 The method for producing the light-emitting device of the present invention is not particularly limited, and can be carried out in accordance with a conventional method for producing a light-emitting device. Specific examples of the production method include the following steps (a) to (e) (step (a), step (b), step (c), step (d), and step (e). ) as a method of necessary steps, etc.

步驟(a):於絕緣基板上塗布包含銀奈米粒子的組成物之步驟 Step (a): a step of coating a composition containing silver nanoparticles on an insulating substrate

步驟(b):使前述組成物中所含有的銀奈米粒子燒結之步驟 Step (b): a step of sintering the silver nanoparticles contained in the composition

步驟(c):於前述絕緣基板上搭載光半導體元件之步驟 Step (c): a step of mounting an optical semiconductor element on the insulating substrate

步驟(d):電性及/或熱地連接前述光半導體元件與電路圖案之步驟 Step (d): the step of electrically and/or thermally connecting the optical semiconductor component and the circuit pattern

步驟(e):以覆蓋前述電路圖案的方式形成保護材料之步驟 Step (e): a step of forming a protective material in such a manner as to cover the aforementioned circuit pattern

前述步驟(a)~步驟(e)的各步驟之實施方法係沒有特別的限定,可依照習知慣用的方法來實施。又,實施上述步驟(a)~步驟(e)的順序係沒有特別的限定,但 例如可依步驟(a)、步驟(b)、步驟(c)、步驟(d)、步驟(e)之順序實施。具體而言,例如可依照後述的發光裝置之實施態樣1~3中記載的各步驟之實施方法來實施。 The method of carrying out the steps in the above steps (a) to (e) is not particularly limited, and can be carried out in accordance with a conventionally used method. Further, the order in which the above steps (a) to (e) are carried out is not particularly limited, but For example, it can be carried out in the order of step (a), step (b), step (c), step (d), and step (e). Specifically, for example, it can be implemented in accordance with the method of implementing each step described in the first to third embodiments of the light-emitting device described later.

本發明之發光裝置的製造方法中各個步驟,可實施僅1次或2次以上。又,前述步驟(a)~步驟(e)亦可各自依序進行,也可同時進行2個以上的步驟。特別是,於本發明的發光裝置之製造方法中,可同時進行步驟(b)及步驟(d)。藉此,可顯著提高發光裝置的製造效率。同時進行步驟(b)及步驟(d)之態樣,係沒有特別的限定,但例如可舉出在以電路圖案的形狀在絕緣基板上塗布.印刷有包含銀奈米粒子的組成物(未燒結的狀態)上,直接或隔著導電性糊(亦可為包含銀奈米粒子的組成物),載置光半導體元件(詳細為其端子),使前述組成物中的銀奈米粒子燒結之態樣等。 Each step in the method of producing a light-emitting device of the present invention can be carried out only once or twice. Further, the above steps (a) to (e) may be carried out sequentially, or two or more steps may be simultaneously performed. In particular, in the method of manufacturing a light-emitting device of the present invention, the steps (b) and (d) can be simultaneously performed. Thereby, the manufacturing efficiency of the light-emitting device can be remarkably improved. The steps (b) and (d) are not particularly limited, but may be applied to an insulating substrate in the shape of a circuit pattern. An optical semiconductor device (detailed in detail) is placed on a composition containing silver nanoparticles (unsintered state) directly or via a conductive paste (may be a composition containing silver nanoparticles) The silver nanoparticle in the above composition is sintered.

本發明之發光裝置的製造方法,除了包含上述步驟(a)~步驟(e),還可包含其它步驟。 The method for producing a light-emitting device of the present invention may include other steps in addition to the above steps (a) to (e).

<發光裝置的實施態樣> <Implementation of Light Emitting Device>

以下,說明本發明之發光裝置及其製造方法的實施態樣之例,惟本發明之實施態樣不受此等所限定。 Hereinafter, examples of the embodiment of the light-emitting device and the method of manufacturing the same according to the present invention will be described, but the embodiment of the present invention is not limited thereto.

[發光裝置的實施態樣1] [Embodiment 1 of Light Emitting Device]

第1圖中例示發光裝置的實施態樣。首先,如第1圖(a)所示,在已大略平坦地形成之絕緣基板4之上面,將包含銀奈米粒子(本發明之銀奈米粒子)的組成物3塗布於指定位置。前述組成物3係使用於形成具有光澤面的電路圖案2。前述組成物3之塗布量係沒有特 別的限定,但較佳為0.002~0.02g/cm2。再者,前述組成物3之塗布方法係沒有特別的限定,但可舉出旋塗、噴墨印刷、網版印刷、分配器印刷、凸版印刷(膠版印刷)、昇華型印刷、平板印刷、雷射印表機印刷(色粉印刷)、凹版印刷(gravure printing)、接觸印刷、微接觸印刷等。 An embodiment of the light-emitting device is illustrated in Fig. 1. First, as shown in Fig. 1(a), a composition 3 containing silver nanoparticles (silver nanoparticle of the present invention) is applied to a predetermined position on the upper surface of the insulating substrate 4 which has been formed substantially flat. The above composition 3 is used to form the circuit pattern 2 having a glossy surface. The coating amount of the above-mentioned composition 3 is not particularly limited, but is preferably 0.002 to 0.02 g/cm 2 . Further, the coating method of the composition 3 is not particularly limited, but examples thereof include spin coating, inkjet printing, screen printing, dispenser printing, letterpress printing (offset printing), sublimation printing, lithography, and thunder. Screen printer printing (toner printing), gravure printing, contact printing, micro contact printing, and the like.

其次,如第1圖(b)所示,將塗布有前述組成 物3的絕緣基板4,用加熱爐等加熱,使前述組成物3中所含有的銀奈米粒子燒結。加熱條件可按照前述組成物3的組成或塗布量而適宜調整,例如可調整成低於200℃(例如150℃以下,較佳為120℃以下,更佳為100℃以下,再更佳為80℃以下)且2小時以下(例如1小時以下,較佳為30分鐘以下,更佳為15分鐘以下,再更佳為10分鐘以下)。藉此,前述組成物3可被形成為表面為緻密的光澤面且具有導電性的電路圖案2。此處,光澤面的光反射率較佳為10~100%。又,光澤面的光反射率為50~100%時,將如此的光澤面特別稱為「鏡面」。 Next, as shown in Figure 1 (b), the above composition will be applied. The insulating substrate 4 of the object 3 is heated by a heating furnace or the like to sinter the silver nanoparticles contained in the composition 3. The heating conditions can be appropriately adjusted according to the composition or coating amount of the above-mentioned composition 3, and can be adjusted, for example, to less than 200 ° C (for example, 150 ° C or less, preferably 120 ° C or less, more preferably 100 ° C or less, still more preferably 80). (C) or less and 2 hours or less (for example, 1 hour or less, preferably 30 minutes or less, more preferably 15 minutes or less, still more preferably 10 minutes or less). Thereby, the above-described composition 3 can be formed into a circuit pattern 2 having a dense shiny surface and having conductivity. Here, the light reflectance of the glossy surface is preferably from 10 to 100%. Further, when the light reflectance of the glossy surface is 50 to 100%, such a glossy surface is particularly referred to as a "mirror surface".

接著,如第1圖(c)所示,於形成有電路圖案 2的絕緣基板4之上的指定位置,隔著導電性糊5搭載光半導體元件1。藉此,光半導體元件1係與電路圖案2電性及熱地連接。隨後,如第1圖(d)所示,用金線等的接合線6電性連接光半導體元件1與其它電路圖案2。 此處,作為導電性糊5,可使用在環氧樹脂等的樹脂黏結劑中摻合有銅粉末等的金屬粉末者等之眾所習知者。 Next, as shown in FIG. 1(c), a circuit pattern is formed At a predetermined position on the insulating substrate 4 of 2, the optical semiconductor element 1 is mounted via the conductive paste 5. Thereby, the optical semiconductor element 1 is electrically and thermally connected to the circuit pattern 2. Subsequently, as shown in FIG. 1(d), the optical semiconductor element 1 and the other circuit patterns 2 are electrically connected by a bonding wire 6 such as a gold wire. Here, as the conductive paste 5, those skilled in the art of blending a metal powder such as copper powder with a resin binder such as an epoxy resin can be used.

隨後,如第1圖(e)所示,以覆蓋電路圖案2 之方式形成保護材料7。藉此,完成本發明之發光裝置。 此處,保護材料7具有保護光半導體元件1或電路圖案2的光澤面以防止空氣中的灰塵、水分、腐蝕性氣體之機能。作為保護材料7,並沒有特別的限定,例如可使用環氧系樹脂、矽氧系樹脂、丙烯酸系樹脂、碳酸酯系樹脂、降烯系樹脂、環烯烴系樹脂、聚醯胺樹脂等之透明樹脂材料來形成。再者,作為保護材料7,除了樹脂材料,還可使用玻璃或無機鍍敷等任意的透明材料。又,保護材料7亦可形成透鏡狀,於該情況下,可將來自光半導體元件1的發光或被電路圖案2的光澤面所反射之光,以保護材料7收斂或發散。 Subsequently, as shown in Fig. 1(e), the protective material 7 is formed so as to cover the circuit pattern 2. Thereby, the light-emitting device of the present invention is completed. Here, the protective material 7 has a function of protecting the glossy surface of the optical semiconductor element 1 or the circuit pattern 2 to prevent dust, moisture, and corrosive gas in the air. The protective material 7 is not particularly limited, and for example, an epoxy resin, a siloxane resin, an acrylic resin, a carbonate resin, or a drop can be used. It is formed of a transparent resin material such as an olefin resin, a cycloolefin resin, or a polyamide resin. Further, as the protective material 7, any transparent material such as glass or inorganic plating may be used in addition to the resin material. Further, the protective material 7 may be formed in a lens shape. In this case, the light emitted from the optical semiconductor element 1 or the light reflected by the shiny surface of the circuit pattern 2 may be converged or diverged by the protective material 7.

[發光裝置的實施態樣2] [Embodiment 2 of Light Emitting Device]

第2圖中例示發光裝置的另一實施態樣。首先,如第2圖(a)所示,在已大略平坦地形成之絕緣基板4之上面,將前述組成物3塗布於指定位置。前述組成物3的塗布量或塗布方法係與實施態樣1相同。 Another embodiment of the light-emitting device is illustrated in Fig. 2. First, as shown in Fig. 2(a), the composition 3 is applied to a predetermined position on the upper surface of the insulating substrate 4 which has been formed substantially flat. The coating amount or coating method of the above-mentioned composition 3 is the same as that of the first embodiment.

其次,如第2圖(b)所示,於塗布有前述組成物3的絕緣基板4之上的指定位置,搭載光半導體元件1。接著,如第2圖(c)所示,用加熱爐等加熱已進行前述組成物3的塗布及光半導體元件1的搭載之絕緣基板4,使前述組成物3中所含有的銀奈米粒子燒結。加熱條件係與實施態樣1相同。藉此,前述組成物3可被形成為表面為緻密的光澤面且具有導電性的電路圖案2。同時,光半導體元件1係與電路圖案2電性及熱地連接。由於此方法係與實施態樣1不同,即使不使用導電性糊5,也可將光半導體元件1與電路圖案2一體化,故可說是高效率的製造方法。 Next, as shown in FIG. 2(b), the optical semiconductor element 1 is mounted at a predetermined position on the insulating substrate 4 to which the composition 3 is applied. Then, as shown in FIG. 2(c), the insulating substrate 4 on which the coating of the composition 3 and the optical semiconductor element 1 are mounted is heated by a heating furnace or the like to form the silver nanoparticles contained in the composition 3. sintering. The heating conditions are the same as in the first embodiment. Thereby, the above-described composition 3 can be formed into a circuit pattern 2 having a dense shiny surface and having conductivity. At the same time, the optical semiconductor element 1 is electrically and thermally connected to the circuit pattern 2. Since this method is different from the first embodiment, the optical semiconductor element 1 can be integrated with the circuit pattern 2 without using the conductive paste 5, so that it can be said to be a highly efficient manufacturing method.

接著,如第2圖(d)所示,用金線等的接合線6電性連接光半導體元件1與其它電路圖案2。其次,如第2圖(e)所示,欲覆蓋電路圖案2,與實施態樣1同樣地形成保護材料7。 Next, as shown in FIG. 2(d), the optical semiconductor element 1 and the other circuit patterns 2 are electrically connected by a bonding wire 6 such as a gold wire. Next, as shown in FIG. 2(e), in order to cover the circuit pattern 2, the protective material 7 is formed in the same manner as in the first embodiment.

[發光裝置的實施態樣3] [Embodiment 3 of Light Emitting Device]

第3圖中例示發光裝置之又一實施態樣。首先,如第3圖(a)所示,準備設有用於搭載光半導體元件1的凹部之絕緣基板4。前述凹部的形狀係沒有特別的限定,可舉出研缽狀、半球狀、倒梯形狀等。前述凹部的形成方法係沒有特別的限定,可將平板狀的絕緣基板4予以切削加工,也可在成形為絕緣基板4之際形成凹部。又,當絕緣基板4為表面經絕緣處理的金屬板時,可在將平板狀的金屬予以切削加工等而形成凹部後,將表面絕緣處理,也可在藉由金屬鑄造等將絕緣基板4成形之際形成凹部後,將表面絕緣處理。 Another embodiment of the light-emitting device is illustrated in Fig. 3. First, as shown in FIG. 3(a), an insulating substrate 4 for mounting a concave portion of the optical semiconductor element 1 is prepared. The shape of the concave portion is not particularly limited, and examples thereof include a mortar shape, a hemispherical shape, and an inverted ladder shape. The method of forming the concave portion is not particularly limited, and the flat insulating substrate 4 may be cut, or a concave portion may be formed when the insulating substrate 4 is formed. Further, when the insulating substrate 4 is a metal plate whose surface is subjected to insulation treatment, the flat metal may be subjected to a cutting process or the like to form a concave portion, and then the surface may be insulated, or the insulating substrate 4 may be formed by metal casting or the like. After the recess is formed, the surface is insulated.

其次,如第3圖(b)所示,將前述組成物3塗布於指定位置。前述組成物3可不僅塗布在凹部的底面,亦可自側面塗布到凹部的開口周邊為止。其結果,即使對於具有複雜形狀的絕緣基板4,也可在任意的地方形成電路圖案2,故高密度的電路圖案2之形成為容易。 Next, as shown in Fig. 3(b), the composition 3 is applied to a predetermined position. The composition 3 may be applied not only to the bottom surface of the concave portion but also to the periphery of the opening of the concave portion from the side surface. As a result, even in the insulating substrate 4 having a complicated shape, the circuit pattern 2 can be formed at an arbitrary position, so that the formation of the high-density circuit pattern 2 is easy.

接著,如第3圖(c),於塗布有前述組成物3的絕緣基板4之上的指定位置,搭載光半導體元件1。於此實施態樣3中,使用在下面具有凸塊者作為光半導體元件1,藉由以使凸塊接觸前述組成物3之方式搭載, 而進行光半導體元件1之覆晶組裝。其次,如第3圖(d)所示,用加熱爐等加熱已進行前述組成物3的塗布及光半導體元件1的搭載之絕緣基板4,使前述組成物3中所含有的銀奈米粒子燒結。加熱條件係與實施態樣1相同。藉此,前述組成物3可被形成為表面為緻密的光澤面且具有導電性的電路圖案2。同時,光半導體元件1係與電路圖案2電性及熱地連接。 Next, as shown in FIG. 3(c), the optical semiconductor element 1 is mounted at a predetermined position on the insulating substrate 4 to which the composition 3 is applied. In the third embodiment, the optical semiconductor element 1 is provided with a bump on the lower surface, and the bump is placed in contact with the composition 3, The flip chip assembly of the optical semiconductor element 1 is performed. Then, as shown in FIG. 3(d), the insulating substrate 4 on which the coating of the composition 3 and the optical semiconductor element 1 are mounted is heated by a heating furnace or the like to form the silver nanoparticles contained in the composition 3. sintering. The heating conditions are the same as in the first embodiment. Thereby, the above-described composition 3 can be formed into a circuit pattern 2 having a dense shiny surface and having conductivity. At the same time, the optical semiconductor element 1 is electrically and thermally connected to the circuit pattern 2.

隨後,如第3圖(e)所示,與實施態樣1同樣 地以覆蓋電路圖案2之方式形成保護材料7。由於此方法係與前述實施態樣1及實施態樣2不同,不需要用金線等的接合線6來電性連接光半導體元件1與其它電路圖案2,故可說是高效率的製造方法。 Subsequently, as shown in FIG. 3(e), the same as the first embodiment The protective material 7 is formed in such a manner as to cover the circuit pattern 2. Since this method is different from the above-described first embodiment and the second embodiment, it is not necessary to electrically connect the optical semiconductor element 1 and the other circuit pattern 2 by the bonding wires 6 such as gold wires, so that it can be said to be a highly efficient manufacturing method.

此外,於發光裝置的實施態樣1~3之任一者 中,由於前述組成物3中所含有的銀奈米粒子皆緻密且分散性或均勻性高,故即使不對前述組成物3的表面進行如專利文獻2中所示之將成形模具推壓而使密接之操作,也可將電路圖案2之表面加工成鏡面。藉此,可簡便且有效率地提高來自光半導體元件的發光。所得之電路圖案2的表面粗糙度Ra,只要滿足前述光澤面的光反射率,則沒有特別的限定,但較佳為1μm以下,更佳為0.1μm以下。 In addition, in any of the embodiments 1 to 3 of the light-emitting device In the case where the silver nanoparticles contained in the composition 3 are dense and have high dispersibility or uniformity, the surface of the composition 3 is not pressed as shown in Patent Document 2, so that the molding die is pressed. The surface of the circuit pattern 2 can also be processed into a mirror surface by the operation of the close contact. Thereby, the light emission from the optical semiconductor element can be easily and efficiently improved. The surface roughness Ra of the obtained circuit pattern 2 is not particularly limited as long as it satisfies the light reflectance of the gloss surface, but is preferably 1 μm or less, and more preferably 0.1 μm or less.

又,於發光裝置的實施態樣1~3之任一者 中,由於皆可以低溫且短時間使前述組成物3中所含有的銀奈米粒子燒結,故可不對光半導體元件1造成熱傷害,而簡便且安定地得到發光裝置。 Further, in any of the embodiments 1 to 3 of the light-emitting device In this case, since the silver nanoparticles contained in the composition 3 can be sintered at a low temperature for a short period of time, the light-emitting device can be easily and stably obtained without causing thermal damage to the optical semiconductor element 1.

再者,於發光裝置的實施態樣1~3之任一者中,由於前述組成物3中所含有的銀奈米粒子皆保存安定性或分散性優異,且即使以低溫且短時間來燒結例如1μm以上的比較厚膜之銀燒結膜時,也可給予良好的導電性或熱傳導性,故生產安定性或生產效率優異,且可簡便地得到能量效率或耐久性優異之發光裝置。 Further, in any of the first to third embodiments of the light-emitting device, the silver nanoparticles contained in the composition 3 are excellent in stability or dispersibility, and are sintered at a low temperature for a short period of time. For example, when a silver sintered film of a relatively thick film of 1 μm or more is used, good conductivity or thermal conductivity can be imparted, so that production stability and production efficiency are excellent, and a light-emitting device excellent in energy efficiency and durability can be easily obtained.

實施例Example

以下,舉出實施例來更具體地說明本發明,惟本發明不受此等實施例所限定。 Hereinafter, the present invention will be specifically described by way of examples, but the invention is not limited by the examples.

[銀燒結膜的比電阻值] [Specific resistance value of silver sintered film]

對於所得之銀燒結膜,使用四端點法(Loresta GP MCP-T610)測定。此裝置的測定範圍極限為107Ωcm。 The obtained silver sintered film was measured using a four-end method (Loresta GP MCP-T610). The measuring range limit of this device is 10 7 Ωcm.

各實施例及比較例中使用以下之試藥。 The following reagents were used in each of the examples and comparative examples.

N,N-二甲基-1,3-丙二胺(MW:102.18):東京化成公司製 N,N-dimethyl-1,3-propanediamine (MW: 102.18): manufactured by Tokyo Chemical Industry Co., Ltd.

2-乙基己基胺(MW:129.25):和光純藥公司製試藥 2-ethylhexylamine (MW: 129.25): Tested by Wako Pure Chemical Co., Ltd.

正丁胺(MW:73.14):東京化成公司製試藥 N-butylamine (MW: 73.14): Tested by Tokyo Chemical Industry Co., Ltd.

正己胺(MW:101.19):東京化成公司製試藥 n-Hexylamine (MW: 101.19): Tested by Tokyo Chemical Industry Co., Ltd.

正辛胺(MW:129.25):東京化成公司製試藥 N-octylamine (MW: 129.25): Tested by Tokyo Chemical Industry Co., Ltd.

油酸(MW:282.47):東京化成公司製試藥 Oleic acid (MW: 282.47): Tested by Tokyo Chemical Industry Co., Ltd.

甲醇:和光純藥公司製試藥特級 Methanol: Wako Pure Chemicals Co., Ltd.

1-丁醇:東京化成公司製試藥 1-butanol: Tokyo Chemical Industry Co., Ltd.

辛烷:和光純藥公司製試藥特級 Octane: Heguang Pure Pharmaceutical Co., Ltd.

二羥基萜品醇:日本萜烯股份有限公司製 Dihydroxyterpineol: manufactured by Japan Terpene Co., Ltd.

草酸銀(MW:303.78):由硝酸銀(和光純藥公司製)與草酸二水合物(和光純藥公司製)所合成者 Silver oxalate (MW: 303.78): Synthesized by silver nitrate (manufactured by Wako Pure Chemical Industries, Ltd.) and oxalic acid dihydrate (manufactured by Wako Pure Chemical Co., Ltd.)

[實施例1] [Example 1] (銀奈米粒子之調製) (modulation of silver nanoparticles)

於50mL燒瓶中,加入1.28g(12.5mmol)N,N-二甲基-1,3-丙二胺、0.91g(12.5mmol)正丁胺、3.24g(32.0mmol)正己胺、0.39g(3.0mmol)正辛胺及0.09g(0.33mmol)油酸,在室溫下攪拌,調製均勻的混合溶液(胺-羧酸混合溶液)。 In a 50 mL flask, 1.28 g (12.5 mmol) of N,N-dimethyl-1,3-propanediamine, 0.91 g (12.5 mmol) of n-butylamine, 3.24 g (32.0 mmol) of n-hexylamine, 0.39 g ( 3.0 mmol) of n-octylamine and 0.09 g (0.33 mmol) of oleic acid were stirred at room temperature to prepare a homogeneous mixed solution (amine-carboxylic acid mixed solution).

於所調製的混合溶液中,加入3.04g(10mmol)草酸銀,在室溫下攪拌,而在認為於外觀上看到朝具有黏性的白色物質之變化完結的時間點,結束攪拌。 To the prepared mixed solution, 3.04 g (10 mmol) of silver oxalate was added, and the mixture was stirred at room temperature, and the stirring was terminated at the time when it was considered that the change to the viscous white matter was observed.

其次,將所得之反應混合物在105℃~110℃加熱攪拌。攪拌開始後立刻開始發生伴隨二氧化碳產生之反應,然後繼續攪拌直到二氧化碳產生完畢為止,結果得到懸浮著呈現藍色光澤的銀奈米粒子之懸浮液。 Next, the obtained reaction mixture was heated and stirred at 105 ° C to 110 ° C. Immediately after the start of the agitation, the reaction accompanying the generation of carbon dioxide started, and then the stirring was continued until the carbon dioxide production was completed, and as a result, a suspension of silver nanoparticles in which the blue luster was suspended was obtained.

接著,於所得之懸浮液中加入10mL的甲醇及攪拌,然後藉由離心分離而使銀奈米粒子沈降,去除上清液。對於所得之銀奈米粒子,再度添加10mL的甲醇及攪拌,然後藉由離心分離使銀奈米粒子沈降,去除上清液。如此地,得到潮濕狀態的銀奈米粒子。 Next, 10 mL of methanol was added to the obtained suspension and stirred, and then the silver nanoparticles were sedimented by centrifugation to remove the supernatant. To the obtained silver nanoparticle, 10 mL of methanol was further added and stirred, and then the silver nanoparticles were sedimented by centrifugation to remove the supernatant. In this way, silver nanoparticles in a wet state were obtained.

(銀奈米塗料之調製與燒結) (Modulation and sintering of silver nano coatings)

隨後,於潮濕的銀奈米粒子中,以成為50wt%的銀濃度之方式,添加1-丁醇/辛烷混合溶劑(體積比=1/4)及攪拌,調製銀奈米粒子分散液(銀奈米塗料)。以燒結後的膜厚成為1μm左右之方式,藉由旋塗法將此銀奈米粒子分散液塗布於無鹼玻璃板上,形成塗膜。 Subsequently, a mixed solution of 1-butanol/octane (volume ratio = 1/4) and stirring was added to the wet silver nanoparticles to obtain a silver concentration of 50% by weight to prepare a silver nanoparticle dispersion ( Silver nano paint). The silver nanoparticle dispersion liquid was applied onto an alkali-free glass plate by a spin coating method so as to have a film thickness after sintering of about 1 μm to form a coating film.

於塗膜之形成後,迅速地在120℃ 15分鐘之條件下,於送風乾燥爐中燒結,形成約1μm的厚度之銀燒結膜。藉由四端點法測定所得之銀燒結膜的比電阻值,結果為8.4μΩcm。 After the formation of the coating film, it was rapidly sintered in a blow drying oven at 120 ° C for 15 minutes to form a silver sintered film having a thickness of about 1 μm. The specific resistance value of the obtained silver sintered film was measured by a four-terminal method and found to be 8.4 μΩcm.

又,對於上述銀奈米粒子分散液,如以下地進行[1]初期分散性評價、[2]保存安定性評價。 In addition, the silver nanoparticle dispersion liquid was subjected to [1] initial dispersion evaluation and [2] storage stability evaluation as follows.

[1]用0.2μm過濾器過濾剛調製後的上述銀奈米粒子分散液,結果沒有發生過濾器堵塞。亦即,上述銀奈米粒子分散液係保持著良好的分散狀態。 [1] The silver nanoparticle dispersion immediately after the preparation was filtered with a 0.2 μm filter, and as a result, no filter clogging occurred. That is, the silver nanoparticle dispersion described above maintains a good dispersion state.

[2]將剛調製後的上述銀奈米粒子分散液置入透明玻璃製樣品瓶中密閉,將此在暗處中於25℃保存7日,結果未看到銀鏡。用0.2μm過濾器過濾保存後的銀奈米粒子分散液,結果未發生過濾器堵塞。亦即,保存後的銀奈米粒子分散液係保持著良好的分散狀態。 [2] The silver nanoparticle dispersion liquid immediately after preparation was placed in a sample bottle made of a transparent glass, and sealed in a dark place at 25 ° C for 7 days, and as a result, no silver mirror was observed. The silver nanoparticle dispersion after storage was filtered through a 0.2 μm filter, and as a result, no filter clogging occurred. That is, the silver nanoparticle dispersion after storage is kept in a good dispersion state.

(關於草酸銀-胺錯合物) (About silver oxalate-amine complex)

對於上述銀奈米粒子之調製中所得之具有黏性的白色物質,進行DSC(差示掃描熱量計)測定,結果熱分解所致的放熱開始平均溫度值為102.5℃。另一方面,對於原料之草酸銀,同樣地進行DSC測定,結果熱分解所致的放熱開始平均溫度值為218℃。如此地,上述銀奈米粒子之調製中所得之具有黏性的白色物質,與原料之草酸銀比較下,熱分解溫度係降低。據此,顯示上述銀奈米粒子之調製中所得之具有黏性的白色物質係草酸銀與烷基胺結合而成者,推測是烷基胺的胺基配位鍵結於草酸銀之銀原子而成之草酸銀-胺錯合物。 The white substance having a viscosity obtained by the preparation of the above silver nanoparticles was subjected to DSC (differential scanning calorimeter) measurement, and as a result, the average temperature value of the exothermic temperature due to thermal decomposition was 102.5 °C. On the other hand, the silver oxalate of the raw material was subjected to DSC measurement in the same manner, and as a result, the average exothermic temperature value due to thermal decomposition was 218 °C. As described above, the viscous white matter obtained by the preparation of the above-mentioned silver nanoparticles has a lower thermal decomposition temperature than the silver oxalate of the raw material. Accordingly, it is shown that the viscous white substance obtained by the preparation of the above silver nanoparticles is a combination of silver oxalate and an alkylamine, and it is presumed that the amine group of the alkylamine is bonded to the silver atom of silver oxalate. A silver oxalate-amine complex.

DSC測定條件係如以下。 The DSC measurement conditions are as follows.

裝置:DSC 6220-ASD2(SII奈米科技公司製) Device: DSC 6220-ASD2 (manufactured by SII Nano Technology Co., Ltd.)

試料容器:15μL鍍金密封盒(SII奈米科技公司製) Sample container: 15μL gold-plated sealed box (SII Nano Technology Co., Ltd.)

升溫速度:10℃/min(室溫~600℃) Heating rate: 10 ° C / min (room temperature ~ 600 ° C)

環境氣體:盒內 大氣壓 封入空氣 Ambient gas: inside the box, atmospheric pressure, enclosed air

盒外 氮氣流(50mL/min) Outside the box, nitrogen flow (50mL/min)

又,對於上述銀奈米粒子之調製中所得之具有黏性的白色物質,進行IR光譜測定,結果觀察到來自烷基胺的烷基之吸收(2900cm-1附近、1000cm-1附近)。據此,亦顯示上述銀奈米粒子之調製中所得之具有黏性的白色物質係草酸銀與烷基胺結合而成者,推測是胺基配位鍵結於草酸銀之銀原子而成之草酸銀-胺錯合物。 Further, the modulation of the silver nanoparticles in the resulting sticky white substance performs spectrometry IR, absorption was observed from a group of alkylamine (2900cm -1 vicinity near 1000cm -1). Accordingly, it has also been shown that the viscous white substance obtained by the preparation of the above silver nanoparticles is a combination of silver oxalate and an alkylamine, and it is presumed that the amine group is bonded to the silver atom of silver oxalate. Silver oxalate-amine complex.

[實施例2] [Embodiment 2]

除了於銀奈米粒子之調製中,將胺-羧酸混合溶液之組成變更為1.28g(12.5mmol)N,N-二甲基-1,3-丙二胺、0.91g(12.5mmol)正丁胺、3.24g(32.0mmol)正己胺、0.39g(3.0mmol)正辛胺及0.13g(0.45mmol)油酸以外,與實施例1同樣地調製銀奈米粒子分散液,進行塗膜之形成、燒結。 In addition to the preparation of the silver nanoparticles, the composition of the amine-carboxylic acid mixed solution was changed to 1.28 g (12.5 mmol) of N,N-dimethyl-1,3-propanediamine and 0.91 g (12.5 mmol). A silver nanoparticle dispersion liquid was prepared in the same manner as in Example 1 except that butanamine, 3.24 g (32.0 mmol) of n-hexylamine, 0.39 g (3.0 mmol) of n-octylamine, and 0.13 g (0.45 mmol) of oleic acid were used. Formed and sintered.

所得之銀燒結膜的膜厚約1μm,比電阻值為11.3μΩcm。 The obtained silver sintered film had a film thickness of about 1 μm and a specific resistance value of 11.3 μΩcm.

[實施例3] [Example 3]

除了於銀奈米粒子之調製中,將胺-羧酸混合溶液之組成變更為1.53g(15.0mmol)N,N-二甲基-1,3-丙二胺、0.73g(10.0mmol)正丁胺、3.24g(32.0mmol)正己 胺、0.39g(3.0mmol)正辛胺及0.13g(0.45mmol)油酸以外,與實施例1同樣地調製銀奈米粒子分散液,進行塗膜之形成、燒結。 In addition to the preparation of the silver nanoparticles, the composition of the amine-carboxylic acid mixed solution was changed to 1.53 g (15.0 mmol) of N,N-dimethyl-1,3-propanediamine and 0.73 g (10.0 mmol). Butylamine, 3.24g (32.0mmol) is already A silver nanoparticle dispersion liquid was prepared in the same manner as in Example 1 except that the amine, 0.39 g (3.0 mmol) of n-octylamine, and 0.13 g (0.45 mmol) of oleic acid were used to form and sinter the coating film.

所得之銀燒結膜的膜厚約1μm,比電阻值為14.2μΩcm。 The obtained silver sintered film had a film thickness of about 1 μm and a specific resistance value of 14.2 μΩcm.

[實施例4] [Example 4]

除了於銀奈米粒子之調製中,將胺-羧酸混合溶液之組成變更為1.02g(10mmol)N,N-二甲基-1,3-丙二胺、1.10g(15.0mmol)正丁胺、3.24g(32.0mmol)正己胺、0.39g(3.0mmol)正辛胺及0.13g(0.45mmol)油酸以外,與實施例1同樣地調製銀奈米粒子分散液,進行塗膜之形成、燒結。 In addition to the preparation of the silver nanoparticles, the composition of the amine-carboxylic acid mixed solution was changed to 1.02 g (10 mmol) of N,N-dimethyl-1,3-propanediamine and 1.10 g (15.0 mmol) of n-butyl. A silver nanoparticle dispersion liquid was prepared in the same manner as in Example 1 except that the amine, 3.24 g (32.0 mmol) of n-hexylamine, 0.39 g (3.0 mmol) of n-octylamine, and 0.13 g (0.45 mmol) of oleic acid were used to form a coating film. ,sintering.

所得之銀燒結膜的膜厚約1μm,比電阻值為14.5μΩcm。 The obtained silver sintered film had a film thickness of about 1 μm and a specific resistance value of 14.5 μΩcm.

[實施例5] [Example 5] (銀奈米粒子之調製) (modulation of silver nanoparticles)

於50mL燒瓶中,加入10.84g(150mmol)正丁胺及3.00g(30mmol)正己胺,在室溫下攪拌,調製均勻的混合溶液(胺混合溶液)。 To a 50 mL flask, 10.84 g (150 mmol) of n-butylamine and 3.00 g (30 mmol) of n-hexylamine were added, and the mixture was stirred at room temperature to prepare a homogeneous mixed solution (amine mixed solution).

於所調製的混合溶液中,加入3.04g(10mmol)的草酸銀,在室溫下攪拌,而在認為於外觀上看到朝具有黏性的白色物質之變化完結的時間點,結束攪拌。 To the prepared mixed solution, 3.04 g (10 mmol) of silver oxalate was added, and the mixture was stirred at room temperature, and the stirring was terminated at the time when it was considered that the change to the viscous white matter was observed.

其次,將所得之反應混合物在85℃~90℃加熱攪拌。開始加熱攪拌後,徐徐地朝茶色變色,藉由2小時加熱攪拌,得到懸浮著銀奈米粒子之懸浮液。 Next, the resulting reaction mixture was heated and stirred at 85 ° C to 90 ° C. After the heating and stirring were started, the color was slowly changed toward brown color, and the mixture was heated and stirred for 2 hours to obtain a suspension in which silver nanoparticles were suspended.

接著,於所得之懸浮液中加入10mL的甲醇及攪拌,然後藉由離心分離而使銀奈米粒子沈降,去除上清液。對於所得之銀奈米粒子,再度添加10mL的甲醇及攪拌,然後藉由離心分離使銀奈米粒子沈降,去除上清液。如此地,得到潮濕狀態的銀奈米粒子。 Next, 10 mL of methanol was added to the obtained suspension and stirred, and then the silver nanoparticles were sedimented by centrifugation to remove the supernatant. To the obtained silver nanoparticle, 10 mL of methanol was further added and stirred, and then the silver nanoparticles were sedimented by centrifugation to remove the supernatant. In this way, silver nanoparticles in a wet state were obtained.

(銀奈米塗料之調製與燒結) (Modulation and sintering of silver nano coatings)

隨後,於潮濕的銀奈米粒子中,以成為70wt%的銀濃度之方式,添加二羥基萜品醇及攪拌,調製含銀奈米粒子的糊(銀奈米塗料)。藉由塗抹器,將此含銀奈米粒子的糊塗布於無鹼玻璃板上,形成塗膜。 Subsequently, in the wet silver nanoparticles, dihydroxy terpineol was added and stirred so as to have a silver concentration of 70% by weight to prepare a paste containing silver nanoparticles (silver nano paint). The silver-containing nanoparticle-containing paste was applied onto an alkali-free glass plate by an applicator to form a coating film.

將塗膜在以下所示的各條件下,於送風乾燥爐中燒結,形成各厚度之銀燒結膜。藉由四端點法測定所得之銀燒結膜的比電阻值。 The coating film was sintered in a blow drying oven under the respective conditions shown below to form a silver sintered film of each thickness. The specific resistance value of the obtained silver sintered film was measured by a four-terminal method.

[1]燒結條件:80℃、30分鐘 [1] Sintering conditions: 80 ° C, 30 minutes

燒結後膜厚:6.77μm Film thickness after sintering: 6.77μm

燒結膜的比電阻值:1.70E-05Ωcm(即,17μΩcm) The specific resistance value of the sintered film: 1.70E-05 Ωcm (ie, 17 μΩcm)

[2]燒結條件:80℃、60分鐘 [2] Sintering conditions: 80 ° C, 60 minutes

燒結後膜厚:4.96μm Film thickness after sintering: 4.96μm

燒結膜的比電阻值:1.00E-05Ωcm Specific resistance of sintered film: 1.00E-05Ωcm

[3]燒結條件:120℃、15分鐘 [3] Sintering conditions: 120 ° C, 15 minutes

燒結後膜厚:5.42μm Film thickness after sintering: 5.42 μm

燒結膜的比電阻值:6.03E-06Ωcm The specific resistance of the sintered film: 6.03E-06Ωcm

[實施例6] [Embodiment 6]

除了於胺混合溶液之組成中,將3.00g(30mmol)正己胺變更為3.88g(30mmol)正辛胺以外,與實施例5同樣地調製含銀奈米粒子的糊,進行塗膜之形成、以下所示的條件下之燒結。 A paste containing silver nanoparticles was prepared in the same manner as in Example 5 except that 3.00 g (30 mmol) of n-hexylamine was changed to 3.88 g (30 mmol) of n-octylamine in the composition of the amine mixed solution, and a coating film was formed. Sintering under the conditions shown below.

[1]燒結條件:80℃、30分鐘 [1] Sintering conditions: 80 ° C, 30 minutes

燒結後膜厚:6.38μm Film thickness after sintering: 6.38μm

燒結膜的比電阻值:6.23E-05Ωcm Specific resistance of sintered film: 6.23E-05Ωcm

[2]燒結條件:80℃、60分鐘 [2] Sintering conditions: 80 ° C, 60 minutes

燒結後膜厚:4.70μm Film thickness after sintering: 4.70 μm

燒結膜的比電阻值:2.21E-05Ωcm Specific resistance of sintered film: 2.21E-05Ωcm

[3]燒結條件:120℃、15分鐘 [3] Sintering conditions: 120 ° C, 15 minutes

燒結後膜厚:4.73μm Film thickness after sintering: 4.73 μm

燒結膜的比電阻值:8.34E-06Ωcm Specific resistance of sintered film: 8.34E-06Ωcm

[參考例1] [Reference Example 1]

除了於銀奈米粒子之調製中,將胺-羧酸混合溶液之組成變更為2.55g(25.0mmol)N,N-二甲基-1,3-丙二胺、3.24g(32.0mmo正己胺l)、0.39g(3.0mmol)正辛胺及0.13g(0.45mmol)油酸以外,與實施例1同樣地調製銀奈米粒子分散液。然後,與實施例1同樣地,以燒結後的膜厚成為1μm左右之方式,進行塗膜之形成、燒結。 In addition to the preparation of the silver nanoparticles, the composition of the amine-carboxylic acid mixed solution was changed to 2.55 g (25.0 mmol) of N,N-dimethyl-1,3-propanediamine, 3.24 g (32.0 mmo n-hexylamine). In the same manner as in Example 1, except that 0.39 g (3.0 mmol) of n-octylamine and 0.13 g (0.45 mmol) of oleic acid were used, a silver nanoparticle dispersion liquid was prepared. Then, in the same manner as in the first embodiment, the coating film was formed and sintered so that the film thickness after sintering was about 1 μm.

所得之銀燒結膜的膜厚約1μm,比電阻值為2.0E+08μΩcm左右。 The obtained silver sintered film had a film thickness of about 1 μm and a specific resistance value of about 2.0E+08 μΩcm.

[參考例2] [Reference Example 2]

除了於胺混合溶液之組成中,將10.84g(150mmol)正丁胺及3.00g(30mmol)正己胺分別變更為8.67g(120mmol)正丁胺及6.00g(60mmol)正己胺以外,與實施例5同樣地調製含銀奈米粒子的糊,進行塗膜之形成、以下所示條件下之燒結。 In addition to the composition of the amine mixed solution, 10.84 g (150 mmol) of n-butylamine and 3.00 g (30 mmol) of n-hexylamine were changed to 8.67 g (120 mmol) of n-butylamine and 6.00 g (60 mmol) of n-hexylamine, respectively, and Examples 5 A paste containing silver nanoparticles was prepared in the same manner to form a coating film and to be sintered under the conditions shown below.

[1]燒結條件:80℃、30分鐘 [1] Sintering conditions: 80 ° C, 30 minutes

燒結後膜厚:6.14μm Film thickness after sintering: 6.14μm

燒結膜的比電阻值:3.21E-05Ωcm Specific resistance of sintered film: 3.21E-05Ωcm

[2]燒結條件:80℃、60分鐘 [2] Sintering conditions: 80 ° C, 60 minutes

燒結後膜厚:5.11μm Film thickness after sintering: 5.11μm

燒結膜的比電阻值:1.72E-05Ωcm Specific resistance of sintered film: 1.72E-05Ωcm

[3]燒結條件:120℃、15分鐘 [3] Sintering conditions: 120 ° C, 15 minutes

燒結後膜厚:4.63μm Film thickness after sintering: 4.63μm

燒結膜的比電阻值:7.42E-06Ωcm Specific resistance of sintered film: 7.42E-06Ωcm

[參考例3] [Reference Example 3]

除了於胺混合溶液之組成中,將10.84g(150mmol)正丁胺及3.88g(30mmol)正辛胺分別變更為8.67g(120mmol)正丁胺及7.66g(60mmol)正辛胺以外,與實施例6同樣地調製含銀奈米粒子的糊,進行塗膜之形成、以下所示條件下之燒結。 In addition to the composition of the amine mixed solution, 10.84 g (150 mmol) of n-butylamine and 3.88 g (30 mmol) of n-octylamine were changed to 8.67 g (120 mmol) of n-butylamine and 7.66 g (60 mmol) of n-octylamine, respectively. In the same manner as in Example 6, a paste containing silver nanoparticles was prepared, and a coating film was formed and sintered under the following conditions.

[1]燒結條件:80℃、30分鐘 [1] Sintering conditions: 80 ° C, 30 minutes

燒結後膜厚:6.04μm Film thickness after sintering: 6.04μm

燒結膜的比電阻值:2.17E-02Ωcm Specific resistance of sintered film: 2.17E-02Ωcm

[2]燒結條件:80℃、60分鐘 [2] Sintering conditions: 80 ° C, 60 minutes

燒結後膜厚:6.45μm Film thickness after sintering: 6.45μm

燒結膜的比電阻值:2.88E-04Ωcm The specific resistance of the sintered film: 2.88E-04Ωcm

[3]燒結條件:120℃、15分鐘 [3] Sintering conditions: 120 ° C, 15 minutes

燒結後膜厚:7.15μm Film thickness after sintering: 7.15μm

燒結膜的比電阻值:1.10E-04Ωcm Specific resistance of sintered film: 1.10E-04Ωcm

產業上的利用可能性Industrial utilization possibility

本發明之發光裝置及其製造方法係適用作為導電性或散熱性優異,發光效率高的發光二極體(LED,Light Emitting Diode)裝置等之發光裝置及其製造方法。 The light-emitting device and the method for producing the same according to the present invention are applicable to a light-emitting device such as a light-emitting diode (LED) device which is excellent in conductivity or heat dissipation and has high light-emitting efficiency, and a method of manufacturing the same.

1‧‧‧光半導體元件 1‧‧‧Optical semiconductor components

2‧‧‧電路圖案 2‧‧‧ circuit pattern

3‧‧‧包含銀奈米粒子的組成物 3‧‧‧Composition containing silver nanoparticles

4‧‧‧絕緣基板 4‧‧‧Insert substrate

5‧‧‧導電性糊 5‧‧‧ Conductive paste

6‧‧‧接合線 6‧‧‧bonding line

7‧‧‧保護材料 7‧‧‧Protective materials

Claims (10)

一種發光裝置,其係具有光半導體元件、電路圖案及絕緣基板之發光裝置,其特徵為:該光半導體元件與該電路圖案係電性及/或熱地連接,且該電路圖案係設於該絕緣基板之上,且該電路圖案係藉由使銀奈米粒子燒結而形成,且該銀奈米粒子係將包含具有脂肪族烴基及胺基的胺(A)以及銀化合物(B)之混合物予以熱分解而得的銀奈米粒子。 A light-emitting device comprising an optical semiconductor device, a circuit pattern and an insulating substrate, wherein the optical semiconductor component is electrically and/or thermally connected to the circuit pattern, and the circuit pattern is disposed on the light-emitting device Above the insulating substrate, the circuit pattern is formed by sintering silver nanoparticles, and the silver nanoparticle system comprises a mixture of an amine (A) having an aliphatic hydrocarbon group and an amine group and a silver compound (B). Silver nanoparticles obtained by thermal decomposition. 如請求項1之發光裝置,其中該混合物包含作為該胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2)、及由脂肪族烴基與2個胺基所成之碳數8以下的脂肪族烴二胺(A3)。 The light-emitting device according to claim 1, wherein the mixture contains, as the amine (A), an aliphatic hydrocarbon monoamine (A1) having an aliphatic hydrocarbon group and an amine group of 6 or more, and an aliphatic hydrocarbon group and An aliphatic hydrocarbon monoamine (A2) having a carbon number of 5 or less formed by one amine group, and an aliphatic hydrocarbon diamine (A3) having 8 or less carbon atoms formed from an aliphatic hydrocarbon group and two amine groups. 如請求項1之發光裝置,其中該混合物包含作為該胺(A)之由脂肪族烴基與1個胺基所成之碳數6以上的脂肪族烴單胺(A1)、及由脂肪族烴基與1個胺基所成之碳數5以下的脂肪族烴單胺(A2),以該單胺(A1)與該單胺(A2)之合計為基準,係以5莫耳%以上且小於20莫耳%之比例包含該單胺(A1),及以超過80莫耳%且95莫耳%以下之比例包含該單胺(A2)。 The light-emitting device according to claim 1, wherein the mixture contains, as the amine (A), an aliphatic hydrocarbon monoamine (A1) having an aliphatic hydrocarbon group and an amine group of 6 or more, and an aliphatic hydrocarbon group. The aliphatic hydrocarbon monoamine (A2) having a carbon number of 5 or less formed with one amine group is 5 mol% or more and less than the total of the monoamine (A1) and the monoamine (A2). The ratio of 20 mol% includes the monoamine (A1), and the monoamine (A2) is contained in a ratio of more than 80 mol% and 95 mol% or less. 如請求項1之發光裝置,其中該混合物包含作為該胺(A)之由碳數4以上的分支脂肪族烴基與1個胺基所成之分支脂肪族烴單胺(A4)。 The light-emitting device according to claim 1, wherein the mixture contains a branched aliphatic hydrocarbon monoamine (A4) which is a branched aliphatic hydrocarbon group having 4 or more carbon atoms and an amine group as the amine (A). 如請求項1之發光裝置,其中該銀化合物(B)係草酸銀。 The light-emitting device of claim 1, wherein the silver compound (B) is silver oxalate. 如請求項1至5中任一項之發光裝置,其中該銀奈米粒子之平均粒徑為0.5nm~100nm。 The light-emitting device according to any one of claims 1 to 5, wherein the silver nanoparticles have an average particle diameter of from 0.5 nm to 100 nm. 如請求項1至6中任一項之發光裝置,其中該光半導體元件及該電路圖案之全部或一部分係經透明保護材料所被覆。 The illuminating device of any one of claims 1 to 6, wherein the optical semiconductor component and all or a portion of the circuit pattern are covered with a transparent protective material. 如請求項7之發光裝置,其中該保護材料係由環氧系樹脂、矽氧系樹脂、丙烯酸系樹脂、碳酸酯系樹脂、降烯系樹脂、環烯烴系樹脂及聚醯胺樹脂中選出的一個以上之材料所構成。 The light-emitting device of claim 7, wherein the protective material is an epoxy resin, a phthalic resin, an acrylic resin, a carbonate resin, or a lowering One or more materials selected from the group consisting of an olefin resin, a cycloolefin resin, and a polyamide resin. 一種發光裝置之製造方法,其係如請求項1至8中任一項之發光裝置之製造方法,其包含:於絕緣基板上塗布包含銀奈米粒子的組成物之步驟(a);使該組成物中所含有的銀奈米粒子燒結之步驟(b);於該絕緣基板上搭載光半導體元件之步驟(c);電性及/或熱地連接該光半導體元件與電路圖案之步驟(d);及,以覆蓋該電路圖案的方式形成保護材料之步驟(e)。 A method of manufacturing a light-emitting device according to any one of claims 1 to 8, comprising: a step (a) of coating a composition comprising silver nanoparticles on an insulating substrate; a step (b) of sintering the silver nanoparticles contained in the composition; a step (c) of mounting the optical semiconductor element on the insulating substrate; and a step of electrically and/or thermally connecting the optical semiconductor element and the circuit pattern ( d); and, step (e) of forming a protective material in such a manner as to cover the circuit pattern. 如請求項9之發光裝置之製造方法,其中同時進行步驟(b)及該步驟(d)。 A method of manufacturing a light-emitting device according to claim 9, wherein the step (b) and the step (d) are simultaneously performed.
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