TW201510278A - Method for producing electroconductive film and electroconductive film - Google Patents

Method for producing electroconductive film and electroconductive film Download PDF

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TW201510278A
TW201510278A TW103127701A TW103127701A TW201510278A TW 201510278 A TW201510278 A TW 201510278A TW 103127701 A TW103127701 A TW 103127701A TW 103127701 A TW103127701 A TW 103127701A TW 201510278 A TW201510278 A TW 201510278A
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conductive film
copper
producing
less
mass
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TW103127701A
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Chinese (zh)
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Yushi HONGO
Yuuichi Hayata
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Fujifilm Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0263Details about a collection of particles
    • H05K2201/0266Size distribution
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

A method for producing an electroconductive film and an electroconductive film produced by using the same are provided. The method for producing the electroconductive film includes: a coating film forming step, wherein the electroconductive film forming composition is applied to a resin substrate with a heat decomposition temperature TD to form the coating film, the electroconductive film forming composition includes copper oxide particles, copper particles, and polyhydric alcohol, and a ratio of a total mass of the copper particles to a total mass of the copper oxide particles is 1.0 or more and 8.0 or less, and the electroconductive film is free of an organic compound curable by heating or lighting; an electroconductive film forming step, wherein the coating film is subjected to a calcination treatment to form an electroconductive film with metal copper as the organic substance residual amount of the electroconductive film is 1 mass% or more and 20 mass% or less at a calcination temperature of TD-50 DEG C or less.

Description

導電膜的製造方法及導電膜 Conductive film manufacturing method and conductive film

本發明是有關於一種導電膜的製造方法。更詳細而言,本發明是有關於使用含有氧化銅粒子、銅粒子、及多元醇的導電膜形成用組成物的導電膜的製造方法。 The present invention relates to a method of producing a conductive film. More specifically, the present invention relates to a method for producing a conductive film using a composition for forming a conductive film containing copper oxide particles, copper particles, and a polyol.

於樹脂基材上形成金屬膜的方法已知如下技術:利用印刷法將金屬氧化物粒子的分散體塗佈於樹脂基材上,進行加熱處理而使其燒結,藉此形成金屬膜或電路基板中的配線等電性導通部位。與現有的利用高熱.真空製程(濺鍍)或鍍敷處理的配線製作法相比,該方法由於簡便.節約能源.節約資源,故而在下一代電子學開發中受到很大期待。 A method of forming a metal film on a resin substrate is known in which a dispersion of metal oxide particles is applied onto a resin substrate by a printing method, followed by heat treatment to be sintered, thereby forming a metal film or a circuit substrate. The electrical conduction point of the wiring. With the existing use of high heat. Compared with the wiring process of vacuum process (sputtering) or plating treatment, this method is simple. Energy saving. Saving resources, so it is expected in the next generation of electronics development.

例如,專利文獻1中揭示有一種金屬薄膜的製造方法,所述金屬薄膜的製造方法包括將金屬氧化物分散體塗佈於基板上後進行加熱處理,該金屬氧化物分散體包含粒徑小於200nm的金屬氧化物及分散介質,該分散介質含有多元醇及/或聚醚化合物。並且作為金屬氧化物而記載有氧化銅,作為多元醇而記載有二乙二醇。 For example, Patent Document 1 discloses a method for producing a metal thin film, which comprises applying a metal oxide dispersion onto a substrate and then performing heat treatment, the metal oxide dispersion comprising a particle diameter of less than 200 nm. a metal oxide and a dispersion medium containing a polyol and/or a polyether compound. Further, copper oxide is described as a metal oxide, and diethylene glycol is described as a polyhydric alcohol.

[現有技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2003/051562號 [Patent Document 1] International Publication No. 2003/051562

於將含有氧化銅微粒的導電膜形成用組成物塗佈於樹脂基材上並進行煅燒處理的情形時,不僅為了節約能源,而且為了樹脂基材的通用性,亦要求低溫下的煅燒處理。然而,於可將聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)或聚萘二甲酸乙二酯(Polyethylene Naphthalate,PEN)用作樹脂基材的200℃以下的煅燒溫度下,氧化銅及銅表面的氧化覆膜的還原不充分,故而難以獲得一面抑制樹脂基材的翹曲、一面具有良好的導電性及密著性的導電膜。 When a composition for forming a conductive film containing copper oxide fine particles is applied onto a resin substrate and subjected to a calcination treatment, not only the energy saving but also the versatility of the resin substrate is required, and the calcination treatment at a low temperature is also required. However, copper oxide and copper oxide can be used at a calcination temperature of 200 ° C or less using polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) as a resin substrate. Since the reduction of the oxide film on the copper surface is insufficient, it is difficult to obtain a conductive film having excellent conductivity and adhesion while suppressing warpage of the resin substrate.

本發明者們對專利文獻1中揭示的導電膜的製造方法進行研究,所得的導電膜的導電性達到最近所要求的水準,但導電膜的密著性並未達到要求水準,且無法抑制樹脂基材的翹曲。 The inventors of the present invention studied the method for producing a conductive film disclosed in Patent Document 1, and the conductivity of the obtained conductive film reached the level required recently, but the adhesion of the conductive film did not reach the required level, and the resin could not be suppressed. Warpage of the substrate.

因此,本發明鑒於所述實情,目的在於提供一種可形成不產生樹脂基材的翹曲、密著性及導電性優異的導電膜的導電膜的製造方法。 Therefore, the present invention has been made in view of the above circumstances, and an object of the invention is to provide a method for producing a conductive film which can form a conductive film which does not cause warpage, adhesion, and conductivity of a resin substrate.

又,本發明的目的在於提供一種使用該導電膜的製造方法所製造的導電膜。 Moreover, an object of the present invention is to provide a conductive film produced by the method for producing a conductive film.

本發明者們對現有技術的問題點進行了積極研究,結果發現,藉由控制導電膜形成用組成物中銅粒子相對於氧化銅粒子的質量比與導電膜的製造步驟中的煅燒溫度及導電膜中的有機物殘渣量,可解決所述課題。 The present inventors have conducted active research on the problems of the prior art, and as a result, found that the mass ratio of copper particles to copper oxide particles in the composition for forming a conductive film and the calcination temperature and conductivity in the production step of the conductive film are controlled. The amount of organic residue in the film can solve the above problem.

即,發現藉由以下構成可達成所述目的。 That is, it was found that the object can be attained by the following constitution.

(1)一種導電膜的製造方法,其包括:塗膜形成步驟,將導電膜賦予至具有熱分解溫度TD的樹脂基材上而形成塗膜,所述導電膜含有氧化銅粒子、銅粒子、及多元醇,銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子的總質量/氧化銅粒子的總質量)為1.0以上且8.0以下,且不含因熱或光而硬化的有機化合物;導電膜形成步驟,於TD-50℃以下的煅燒溫度下,以導電膜中的有機物殘渣量成為1質量%以上且20質量%以下的方式對塗膜進行煅燒處理而形成含有金屬銅的導電膜。 (1) A method for producing a conductive film, comprising: a coating film forming step of applying a conductive film to a resin substrate having a thermal decomposition temperature T D to form a coating film, the conductive film containing copper oxide particles, copper particles And the ratio of the ratio of the total mass of the copper particles to the total mass of the copper oxide particles (total mass of the copper particles / total mass of the copper oxide particles) of the polyol and the polyol is 1.0 or more and 8.0 or less, and does not contain heat or light. In the conductive film forming step, the coating film is calcined so that the amount of the organic residue in the conductive film is 1% by mass or more and 20% by mass or less at a calcination temperature of T D -50 ° C or lower. A conductive film containing metallic copper is formed.

(2)如(1)所述的導電膜的製造方法,其中煅燒溫度為220℃以下。 (2) The method for producing a conductive film according to (1), wherein the calcination temperature is 220 ° C or lower.

(3)如(1)或(2)所述的導電膜的製造方法,其中煅燒溫度為200℃以下。 (3) The method for producing a conductive film according to (1) or (2), wherein the calcination temperature is 200 ° C or lower.

(4)如(1)至(3)中任一項所述的導電膜的製造方法,其中有機物殘渣量為5質量%以上且10質量%以下。 The method for producing a conductive film according to any one of the above aspects, wherein the amount of the organic residue is 5% by mass or more and 10% by mass or less.

(5)如(1)至(4)中任一項所述的導電膜的製造方法,其中銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子 的總質量/氧化銅粒子的總質量)為2.0以上且6.0以下。 (5) The method for producing a conductive film according to any one of (1) to (4), wherein a ratio of a total mass of the copper particles to a total mass of the copper oxide particles (copper particles) The total mass / total mass of the copper oxide particles is 2.0 or more and 6.0 or less.

(6)如(1)至(5)中任一項所述的導電膜的製造方法,其中多元醇的總質量相對於氧化銅粒子的總質量之比的值(多元醇的總質量/氧化銅粒子的總質量)為1.0以上且4.0以下。 (6) The method for producing a conductive film according to any one of (1) to (5), wherein a ratio of a total mass of the polyol to a total mass of the copper oxide particles (total mass of the polyol/oxidation) The total mass of the copper particles is 1.0 or more and 4.0 or less.

(7)如(1)至(6)中任一項所述的導電膜的製造方法,其中樹脂基材為聚對苯二甲酸乙二酯(PET)基材或聚萘二甲酸乙二酯(PEN)基材。 (7) The method for producing a conductive film according to any one of (1) to (6) wherein the resin substrate is a polyethylene terephthalate (PET) substrate or polyethylene naphthalate. (PEN) substrate.

(8)如(1)至(7)中任一項所述的導電膜的製造方法,其中多元醇為抗壞血酸或二羥丙酮。 The method for producing a conductive film according to any one of (1) to (7) wherein the polyol is ascorbic acid or dihydroxyacetone.

(9)如(1)至(8)中任一項所述的導電膜的製造方法,其中氧化銅粒子的平均粒徑為20nm以上且50nm以下。 The method for producing a conductive film according to any one of (1) to (8), wherein the copper oxide particles have an average particle diameter of 20 nm or more and 50 nm or less.

(10)如(1)至(9)中任一項所述的導電膜的製造方法,其中銅粒子的平均粒徑為0.1μm以上且10μm以下。 (10) The method for producing a conductive film according to any one of (1) to (9), wherein the copper particles have an average particle diameter of 0.1 μm or more and 10 μm or less.

(11)如(1)至(10)中任一項所述的導電膜的製造方法,其中煅燒處理是在惰性氣體環境中進行。 The method for producing a conductive film according to any one of (1) to (10), wherein the calcination treatment is carried out in an inert gas atmosphere.

(12)一種導電膜,其是藉由如(1)至(11)中任一項所述的導電膜的製造方法所製造。 (12) A conductive film produced by the method for producing a conductive film according to any one of (1) to (11).

依據本發明,可提供一種可形成不產生樹脂基材的翹曲、密著性及導電性優異的導電膜的導電膜的製造方法。 According to the present invention, it is possible to provide a method for producing a conductive film which can form a conductive film which does not cause warpage, adhesion, and conductivity of a resin substrate.

又,依據本發明,亦可提供一種使用該導電膜的製造方法所製造的導電膜。 Moreover, according to the present invention, a conductive film produced by the method for producing the conductive film can also be provided.

以下,對本發明的導電膜的製造方法及導電膜形成用組成物的較佳實施方式進行詳細說明。 Hereinafter, preferred embodiments of the method for producing a conductive film and the composition for forming a conductive film of the present invention will be described in detail.

首先,對本發明的與現有技術比較的特徵點進行詳細說明。 First, the feature points of the present invention which are compared with the prior art will be described in detail.

本發明的特徵之一在於:對於在具有熱分解溫度TD的樹脂基材上形成的塗膜,於TD-50℃以下的煅燒溫度下,以導電膜中的有機物殘渣量成為1質量%以上且20質量%以下的方式進行煅燒處理。藉由於該條件下進行煅燒處理,可不產生樹脂基材的翹曲而於樹脂基材上形成密著性及導電性優異的導電膜。 One of the features of the present invention is that, for a coating film formed on a resin substrate having a thermal decomposition temperature T D , the amount of organic residue in the conductive film is 1% by mass at a calcination temperature of T D -50 ° C or lower. The calcination treatment is carried out in the above manner and at least 20% by mass. By performing the calcination treatment under these conditions, it is possible to form a conductive film having excellent adhesion and conductivity on the resin substrate without causing warpage of the resin substrate.

又,本發明的另一特徵在於:導電膜形成用組成物以銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子的總質量/氧化銅粒子的總質量)成為1.0以上且8.0以下的方式含有氧化銅粒子及銅粒子。藉由於該條件下含有氧化銅粒子及銅粒子,可不產生樹脂基材的翹曲而於樹脂基材上形成密著性及導電性優異的導電膜。 Further, another feature of the present invention is that the composition for forming a conductive film has a ratio of a total mass of copper particles to a total mass of copper oxide particles (total mass of copper particles/total mass of copper oxide particles) of 1.0. The above and below 8.0 include copper oxide particles and copper particles. By containing copper oxide particles and copper particles under such conditions, it is possible to form a conductive film having excellent adhesion and conductivity on the resin substrate without causing warpage of the resin substrate.

以下,首先,對導電膜形成用組成物的各種成分(氧化銅粒子、銅粒子及多元醇等)進行詳細說明,其後,對導電膜的製造方法進行詳細說明。 In the following, various components (such as copper oxide particles, copper particles, and polyhydric alcohol) of the conductive film-forming composition will be described in detail. Hereinafter, a method for producing a conductive film will be described in detail.

再者,於本發明中,於關於某數值範圍而記作「X以上且Y以下」或「X~Y」的情形時,X及Y包含於該數值範圍內。 Further, in the present invention, when a certain numerical range is referred to as "X or more and Y or less" or "X~Y", X and Y are included in the numerical range.

<氧化銅粒子> <Copper oxide particles>

於導電膜形成用組成物中含有氧化銅粒子。氧化銅粒子的氧化銅藉由煅燒處理而還原為金屬銅,與後述的銅粒子一併構成導電膜中的金屬銅。 The composition for forming a conductive film contains copper oxide particles. The copper oxide of the copper oxide particles is reduced to metallic copper by a calcination treatment, and together with the copper particles described later, the metallic copper in the conductive film is formed.

氧化銅粒子的平均粒徑並無特別限制,較佳為10nm以上且100nm以下的範圍內,更佳為20nm以上且50nm以下的範圍內。 The average particle diameter of the copper oxide particles is not particularly limited, but is preferably in the range of 10 nm or more and 100 nm or less, more preferably in the range of 20 nm or more and 50 nm or less.

若氧化銅粒子的平均粒徑為10nm以上,則粒子表面的活性不會變得過高,在組成物中分散變得容易,操作性、保存性優異。又,若氧化銅粒子的平均粒徑為100nm以下,則變得容易將組成物用作噴墨用油墨組成物而藉由印刷法進行配線等的圖案形成,且於將組成物導體化時,由於活性面擴大,故而容易還原為金屬銅,所得的導電膜的導電性變得更良好。若氧化銅粒子的平均粒徑為20nm以上且50nm以下的範圍內,則所得的導電膜的導電性進一步優異。 When the average particle diameter of the copper oxide particles is 10 nm or more, the activity on the surface of the particles does not become excessively high, and the dispersion in the composition is easy, and the workability and storage stability are excellent. In addition, when the average particle diameter of the copper oxide particles is 100 nm or less, it is easy to use the composition as an ink composition for inkjet, and to form a pattern such as wiring by a printing method, and when the composition is conductorized, Since the active surface is enlarged, it is easily reduced to metallic copper, and the conductivity of the obtained conductive film is further improved. When the average particle diameter of the copper oxide particles is in the range of 20 nm or more and 50 nm or less, the conductivity of the obtained conductive film is further excellent.

本發明中的所謂「氧化銅」,是實質上不含未經氧化的銅的化合物,具體而言,是指於藉由X射線繞射的晶體分析中,檢測出源自氧化銅的峰值,且未檢測出源自金屬的峰值的化合物。所謂實質上不含銅,是指銅的含量在氧化銅粒子的總質量中為1質量%以下。 The "copper oxide" in the present invention is a compound which does not substantially contain unoxidized copper, and specifically refers to a peak derived from copper oxide in crystal analysis by X-ray diffraction. And no compound derived from the peak of the metal was detected. The term "containing substantially no copper" means that the content of copper is 1% by mass or less based on the total mass of the copper oxide particles.

又,氧化銅較佳為氧化銅(I)或氧化銅(II),就可廉價地獲取、在空氣中的穩定性優異的方面而言,進而較佳為氧化 銅(II)。 Further, copper oxide is preferably copper oxide (I) or copper (II) oxide, which is inexpensively obtained and excellent in stability in air, and further preferably oxidized. Copper (II).

作為氧化銅粒子,可使用導電膜形成用組成物所使用的公知的氧化銅粒子。例如,作為氧化銅粒子,可使用C.I.化成(C.I.KASEI)公司製造的NanoTek(R)CuO、NanoTek(R)Slurry CuO、依歐利特科(Iolitec)公司製造的NO-0004-HP、NO-0031-HP、西格瑪奧德里奇(Sigma-Aldrich)公司製造的氧化銅(II)奈米粉末(nanopowder)等。 As the copper oxide particles, known copper oxide particles used for the composition for forming a conductive film can be used. For example, as the copper oxide particles, NanoTek (R) CuO, NanoTek (R) Slurry CuO manufactured by CICASEI Co., Ltd., NO-0004-HP manufactured by Iolitec Co., Ltd., NO-0031 can be used. - HP, copper (II) nano powder (nanopowder) manufactured by Sigma-Aldrich Co., Ltd., and the like.

再者,本發明中的氧化銅粒子的平均粒徑是指平均一次粒徑。平均粒徑是藉由穿透式電子顯微鏡(Transmission Electron Microscope,TEM)觀察或掃描式電子顯微鏡(Scanning Electron Microscope,SEM)觀察,測定至少50個以上的氧化銅粒子的粒徑(直徑),將該些粒徑進行算術平均而求出。再者,觀察圖中,於氧化銅粒子的形狀並非正圓狀的情形時,以長徑作為直徑而測定。 Furthermore, the average particle diameter of the copper oxide particles in the present invention means an average primary particle diameter. The average particle diameter is measured by a transmission electron microscope (TEM) or a scanning electron microscope (SEM), and the particle diameter (diameter) of at least 50 or more copper oxide particles is measured. These particle diameters were obtained by arithmetic mean. In the observation chart, when the shape of the copper oxide particles is not a perfect circular shape, the long diameter is measured as the diameter.

<銅粒子> <copper particles>

於導電膜形成用組成物中含有銅粒子。銅粒子與藉由成膜時的煅燒處理而使所述氧化銅粒子的氧化銅還原所生成的金屬銅一併構成導電膜中的金屬銅。 Copper particles are contained in the composition for forming a conductive film. The copper particles and the metal copper formed by the reduction of the copper oxide of the copper oxide particles by the calcination treatment at the time of film formation constitute the metal copper in the conductive film.

銅粒子的平均粒徑並無特別限制,較佳為0.1μm以上且20μm以下的範圍內,更佳為0.1μm以上且10μm以下的範圍內。 The average particle diameter of the copper particles is not particularly limited, but is preferably in the range of 0.1 μm or more and 20 μm or less, and more preferably in the range of 0.1 μm or more and 10 μm or less.

若銅粒子的平均粒徑為0.1μm以上,則所得的導電膜的導電性更優異。又,若銅粒子的平均粒徑為20μm以下,則變得容易 形成微細配線。若銅粒子的平均粒徑為0.1μm以上且10μm以下的範圍內,則導電膜的密著性及導電性進一步優異,故而更佳。 When the average particle diameter of the copper particles is 0.1 μm or more, the conductive film obtained is more excellent in conductivity. Further, when the average particle diameter of the copper particles is 20 μm or less, it becomes easy Fine wiring is formed. When the average particle diameter of the copper particles is in the range of 0.1 μm or more and 10 μm or less, the adhesion and conductivity of the conductive film are further improved, which is more preferable.

作為銅粒子,可使用導電膜形成用組成物所使用的公知的金屬銅粒子。例如,作為銅粒子,可使用三井金屬礦業公司製造的片狀銅粉1050YP、1100YP、1200YP、1400YP、MA-C08JF、MA-C025KFD、MA-C05KFD、微粒霧化銅粉MA-C015K、MA-C02K、MA-C03K、MA-C04K、MA-C08J、MA-CJU、濕式銅粉1030Y、1050Y、1100Y、1200N、1400Y、1400YM、1110等。 As the copper particles, known metal copper particles used for the composition for forming a conductive film can be used. For example, as the copper particles, flake copper powder 1050YP, 1100YP, 1200YP, 1400YP, MA-C08JF, MA-C025KFD, MA-C05KFD, particulate atomized copper powder MA-C015K, MA-C02K manufactured by Mitsui Mining and Metals Co., Ltd. can be used. , MA-C03K, MA-C04K, MA-C08J, MA-CJU, wet copper powder 1030Y, 1050Y, 1100Y, 1200N, 1400Y, 1400YM, 1110, and the like.

再者,本發明中的銅粒子的平均粒徑是指平均一次粒徑。平均粒徑是藉由穿透式電子顯微鏡(TEM)觀察或掃描式電子顯微鏡(SEM)觀察,測定至少50個以上的銅粒子的粒徑(直徑),將該些粒徑進行算術平均而求出。再者,觀察圖中,於銅粒子的形狀並非正圓狀的情形時,以長徑作為直徑而測定。 Furthermore, the average particle diameter of the copper particles in the present invention means an average primary particle diameter. The average particle diameter is measured by a transmission electron microscope (TEM) observation or a scanning electron microscope (SEM), and the particle diameter (diameter) of at least 50 or more copper particles is measured, and the particle diameters are arithmetically averaged. Out. In the observation chart, when the shape of the copper particles is not a perfect circular shape, the long diameter is measured as the diameter.

<多元醇> <polyol>

於導電膜形成用組成物中含有多元醇。多元醇由於具有還原性,故而於煅燒處理時使導電膜中的氧化銅還原而轉換為金屬銅。 A polyol is contained in the composition for forming a conductive film. Since the polyol has reducibility, the copper oxide in the conductive film is reduced at the time of the calcination treatment to be converted into metallic copper.

多元醇只要為1分子中具有2個以上羥基的化合物,則並無特別限定,例如可列舉:乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、2,3-丁二醇、戊二醇、己二醇、辛二醇、1,1,1-三羥甲基乙烷、2-乙基-2-羥甲基-1,3-丙二醇、1,2,6-己三醇、1,2,3-己三醇、1,2,4-丁三醇、抗壞血酸、異抗壞血酸、糖醇類、單糖類、二糖類、三糖類等。 The polyhydric alcohol is not particularly limited as long as it has a compound having two or more hydroxyl groups in one molecule, and examples thereof include ethylene glycol, diethylene glycol, 1,2-propanediol, 1,3-propanediol, and 1,2- Butylene glycol, 1,3-butanediol, 1,4-butanediol, 2-butene-1,4-diol, 2,3-butanediol, pentanediol, hexanediol, xinji Alcohol, 1,1,1-trishydroxymethylethane, 2-ethyl-2-hydroxymethyl-1,3-propanediol, 1,2,6-hexanetriol, 1,2,3-hexa Alcohol, 1,2,4-butanetriol, ascorbic acid, isoascorbic acid, sugar alcohols, monosaccharides, disaccharides, trisaccharides, and the like.

作為糖醇類,可列舉:包含甘油的丙糖醇類;赤藻糖醇、蘇糖醇等丁糖醇類;阿拉伯糖醇、木糖醇、核糖醇(adonitol)等戊糖醇類;艾杜糖醇、半乳糖醇(dulcitol)、山梨糖醇(sorbitol)、甘露糖醇等己糖醇類;庚七醇(volemitol)、洋梨醇等庚糖醇類等。 Examples of the sugar alcohols include: glycerols containing glycerin; butanols such as erythritol and threitol; and pentitols such as arabitol, xylitol, and adonitol; Hexitols such as durum alcohol, dulcitol, sorbitol, and mannitol; heptitols such as volemitol and sorbitol; and the like.

作為單糖類,可列舉:甘油醛、蘇糖、赤藻糖、核糖、阿拉伯糖、木糖、來蘇糖、阿洛糖、阿卓糖、葡萄糖、甘露糖、古洛糖、艾杜糖、半乳糖、太洛糖等醛糖類;二羥丙酮、赤藻酮糖、木酮糖、核酮糖、阿洛酮糖、果糖、山梨糖、塔格糖、景天庚酮糖、馬桑糖等酮糖類等。 Examples of the monosaccharide include glyceraldehyde, threose, erythroglucose, ribose, arabinose, xylose, lyxose, allose, altrose, glucose, mannose, gulose, and idose. Aldose, galactose and other aldoses; dihydroxyacetone, erythrokholose, xylulose, ribulose, psicose, fructose, sorbose, tagatose, sedoheptulose, marshmallow, etc. Ketosaccharides and the like.

作為二糖類,可列舉:蔗糖、海藻糖、異海藻糖(β,β-海藻糖)、新海藻糖(α,β-海藻糖)、半乳蔗糖等非還原糖;乳酮糖、乳糖、麥芽糖、纖維二糖、麴二糖、黑麯黴糖(nigerose)、異麥芽糖、槐二糖、海帶二糖、龍膽二糖、松二糖、麥芽酮糖(maltulose)、巴拉金糖(palatinose)、龍膽二酮糖(gentibiulose)、甘露二糖(mannobiose)、蜜二糖、車前二糖(melibiulose)、新乳糖、海蔥二糖、芸香糖、芸香酮糖(rutinulose)、莢豆二糖、木二糖(xylobiose)、櫻草糖等還原糖等。 Examples of the disaccharide include sucrose, trehalose, iso-trehalose (β, β-trehalose), new trehalose (α, β-trehalose), and non-reducing sugar such as galactose; lactulose, lactose, and Maltose, cellobiose, bismuth saccharide, nigerose, isomaltose, bismuth saccharide, kelp disaccharide, gentiobiose, pine disaccharide, maltulose, palatinose Palatinose), gentibiulose, mannobiose, melibiose, melibiulose, new lactose, squill disaccharide, sucrose, rutinulose, pod Bean disaccharide, xylobiose, primrose and other reducing sugars.

作為三糖類,可列舉:黑麯黴三糖、麥芽三糖、松三糖、麥芽三酮糖、棉子糖、蔗果三糖等。 Examples of the trisaccharide include Aspergillus niger trisaccharide, maltotriose, melezitose, maltotrione, raffinose, and canetriose.

再者,多元醇於存在鏡像異構物的情形時,亦包含該鏡像異構物。例如,抗壞血酸包含L-抗壞血酸及D-抗壞血酸,葡萄糖包含D-葡萄糖、L-葡萄糖等。又,多元醇於存在互變異構物 (tautomer)的情形時,亦包含該互變異構物。例如,葡萄糖包含α-葡萄哌喃糖、β-葡萄哌喃糖、α-葡萄呋喃糖、β-葡萄呋喃糖等。 Further, the polyol also includes the mirror image isomer in the presence of a mirror image isomer. For example, ascorbic acid contains L-ascorbic acid and D-ascorbic acid, and glucose contains D-glucose, L-glucose, and the like. Also, the polyol is present in the tautomer In the case of (tautomer), the tautomer is also included. For example, glucose includes α-glucopyranose, β-glucopyranose, α-glucofuranose, β-glucofuranose, and the like.

<溶劑及其他成分> <Solvents and other ingredients>

除了氧化銅粒子、銅粒子及多元醇以外,導電膜形成用組成物亦可於不損及本發明的效果的範圍含有溶劑(分散介質)或各種添加劑(調平劑、偶合劑、黏度調整劑、抗氧化劑、密著劑等)等其他成分。尤其是為了獲得具有適度流動性的組成物,較佳為含有溶劑。 In addition to the copper oxide particles, the copper particles, and the polyol, the conductive film-forming composition may contain a solvent (dispersion medium) or various additives (a leveling agent, a coupling agent, and a viscosity adjuster) in a range that does not impair the effects of the present invention. Other ingredients such as antioxidants, adhesives, etc.). In particular, in order to obtain a composition having moderate fluidity, it is preferred to contain a solvent.

作為溶劑,例如可列舉選自水、醇類、醚類、酯類、烴類及芳香族烴類中的1種、或具有相溶性的2種以上的混合物。 The solvent is, for example, one selected from the group consisting of water, alcohols, ethers, esters, hydrocarbons, and aromatic hydrocarbons, or a mixture of two or more kinds having compatibility.

就與多元醇的相溶性優異的方面而言,溶劑可較佳地使用水、水溶性醇(僅限於一元醇)、源自水溶性醇的烷基醚(僅限於1分子中羥基為1個以下者)、源自水溶性醇的烷基酯(僅限於1分子中羥基為1個以下者)、或該些溶劑的混合物。 In terms of excellent compatibility with a polyol, the solvent can preferably be water, a water-soluble alcohol (monohydric alcohol only), an alkyl ether derived from a water-soluble alcohol (only one hydroxyl group per molecule) The following are the alkyl esters derived from a water-soluble alcohol (only one or less hydroxyl groups in one molecule), or a mixture of these solvents.

作為水,較佳為至少具有離子交換水的程度的純度者。 As the water, it is preferred to have a purity of at least ion-exchanged water.

作為水溶性醇(僅限於一元醇),具體而言,可例示:甲醇、乙醇、1-丙醇、1-丁醇、1-戊醇、1-己醇、環己醇、1-庚醇、1-辛醇、1-壬醇、1-癸醇、縮水甘油、甲基環己醇、2-甲基-1-丁醇、3-甲基-2-丁醇、4-甲基-2-戊醇、異丙醇、2-乙基丁醇、2-乙基己醇、2-辛醇、萜品醇、二氫萜品醇、2-甲氧基乙醇、2-乙氧基乙醇、2-正丁氧基乙醇、卡必醇、乙基卡必醇、正丁基卡必醇、二丙酮醇等。 As the water-soluble alcohol (monool alone), specifically, methanol, ethanol, 1-propanol, 1-butanol, 1-pentanol, 1-hexanol, cyclohexanol, 1-heptanol can be exemplified , 1-octanol, 1-nonanol, 1-nonanol, glycidol, methylcyclohexanol, 2-methyl-1-butanol, 3-methyl-2-butanol, 4-methyl- 2-pentanol, isopropanol, 2-ethylbutanol, 2-ethylhexanol, 2-octanol, terpineol, dihydroterpineol, 2-methoxyethanol, 2-ethoxyl Ethanol, 2-n-butoxyethanol, carbitol, ethyl carbitol, n-butyl carbitol, diacetone alcohol, and the like.

該些中,選自甲醇、2-甲氧基乙醇及異丙醇中的至少1種由於沸點不會過高,在導電膜形成後不易殘存,故而較佳。 Among these, at least one selected from the group consisting of methanol, 2-methoxyethanol, and isopropyl alcohol is preferred because the boiling point is not excessively high and is not easily retained after the formation of the conductive film.

作為源自水溶性醇的烷基醚(僅限於1分子中羥基為1個以下者),具體而言,可例示:二乙醚、二異丁醚、二丁醚、甲基-第三丁基醚、甲基環己基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇二甲醚、三乙二醇二乙醚、四氫呋喃、四氫吡喃、1,4-二噁烷等。 The alkyl ether derived from a water-soluble alcohol (only one or less hydroxyl groups in one molecule) is specifically: diethyl ether, diisobutyl ether, dibutyl ether, methyl-tert-butyl group Ether, methylcyclohexyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, tetrahydrofuran, tetrahydropyran, 1,4-two Oxane and the like.

該些中,選自二乙醚、二乙二醇二甲醚及四氫呋喃中的至少1種由於沸點不會過高,在導電膜形成後不易殘存,故而較佳。 Among these, at least one selected from the group consisting of diethyl ether, diethylene glycol dimethyl ether and tetrahydrofuran is preferred because the boiling point is not excessively high and is not easily retained after the formation of the conductive film.

作為源自水溶性醇的烷基酯(僅限於1分子中羥基為1個以下者),具體而言,可例示:甲酸甲酯、甲酸乙酯、甲酸丁酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酸甲酯、丙酸乙酯、丙酸丁酯、γ-丁內酯等。 Specific examples of the alkyl ester derived from a water-soluble alcohol (only one or less hydroxyl groups per molecule) may be exemplified by methyl formate, ethyl formate, butyl formate, methyl acetate, and ethyl acetate. , butyl acetate, methyl propionate, ethyl propionate, butyl propionate, γ-butyrolactone and the like.

該些中,選自甲酸甲酯、甲酸乙酯及乙酸甲酯中的至少1種由於沸點不會過高,在導電膜形成後不易殘存,故而較佳。 Among these, at least one selected from the group consisting of methyl formate, ethyl formate, and methyl acetate is preferred because the boiling point is not excessively high and is not easily retained after the formation of the conductive film.

溶劑中,就沸點不會過高的方面而言,尤佳為使用水或水溶性醇(僅限於一元醇)作為主溶劑。所謂主溶劑,是在溶劑中含有率最多的溶劑。 Among the solvents, it is preferred to use water or a water-soluble alcohol (monool alone) as a main solvent in terms of not excessively high boiling point. The main solvent is a solvent having the highest content in a solvent.

[導電膜形成用組成物的製造方法] [Method for Producing Composition for Conductive Film Formation]

本發明的導電膜形成用組成物含有氧化銅粒子、銅粒子、多元醇以及所需的溶劑及其他成分,但不含因熱或光而硬化的有機化合物。 The conductive film-forming composition of the present invention contains copper oxide particles, copper particles, a polyol, and a desired solvent and other components, but does not contain an organic compound which is cured by heat or light.

所謂因熱或光而硬化的有機化合物,是指藉由加熱而硬化的有機化合物、或藉由光照射而硬化的有機化合物。光照射包含電磁波照射。 The organic compound which is hardened by heat or light means an organic compound which is cured by heating or an organic compound which is cured by light irradiation. Light irradiation includes electromagnetic wave irradiation.

作為藉由加熱而硬化的有機化合物,例如可列舉熱硬化性樹脂。作為熱硬化性樹脂,具體而言,可列舉:酚樹脂、環氧樹脂、三聚氰胺樹脂、脲樹脂(urea resin)、不飽和聚酯樹脂、醇酸樹脂、聚胺基甲酸酯、熱硬化性聚醯亞胺等。 As an organic compound hardened by heating, a thermosetting resin is mentioned, for example. Specific examples of the thermosetting resin include a phenol resin, an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, and a thermosetting property. Polyimine and the like.

作為藉由光照射而硬化的有機化合物,例如可列舉光硬化性樹脂。作為光硬化性樹脂,可列舉藉由光聚合起始劑的活性化而進行單體或寡聚物的聚合的樹脂。 As an organic compound hardened by light irradiation, a photocurable resin is mentioned, for example. The photocurable resin is a resin which polymerizes a monomer or an oligomer by activation of a photopolymerization initiator.

又,所謂「不含」,是指相對於氧化銅粒子、銅粒子及多元醇的合計,因熱或光而硬化的有機化合物的比例為1質量%以下,較佳為0質量%。 In addition, the term "excluding" means that the ratio of the organic compound which is cured by heat or light is 1% by mass or less, preferably 0% by mass, based on the total of the copper oxide particles, the copper particles, and the polyol.

導電膜形成用組成物中的銅粒子的含量為銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子的總質量/氧化銅粒子的總質量)成為1.0以上且8.0以下、較佳為2.0以上且6.0以下的量。若銅粒子的總質量相對於氧化銅粒子的總質量之比的值處於該範圍內,則導電路徑增加,故而所得的導電膜的導電性優異,且由於提高導電膜形成用組成物的流動性,故而導電膜形成用組成物的印刷性優異。銅粒子的總質量相對於氧化銅粒子的總質量之比的值小於1.0時,在煅燒處理時無法抑制樹脂基材的翹曲,超過8.0時所製造的導電膜的密著性及導電性未達到所要求的 水準。 The content of the copper particles in the conductive film-forming composition is a value (the total mass of the copper particles/the total mass of the copper oxide particles) of the total mass of the copper particles to the total mass of the copper oxide particles is 1.0 or more and 8.0 or less. Preferably, it is an amount of 2.0 or more and 6.0 or less. When the value of the ratio of the total mass of the copper particles to the total mass of the copper oxide particles is within this range, the conductive path is increased, so that the conductive film obtained is excellent in conductivity and the fluidity of the composition for forming a conductive film is improved. Therefore, the composition for forming a conductive film is excellent in printability. When the ratio of the ratio of the total mass of the copper particles to the total mass of the copper oxide particles is less than 1.0, the warpage of the resin substrate cannot be suppressed during the baking treatment, and the adhesion and conductivity of the conductive film produced when the temperature exceeds 8.0 are not Reach the required level.

導電膜形成用組成物中的多元醇的含量並無特別限定,為多元醇的總質量相對於氧化銅粒子的總質量之比的值(多元醇的總質量/氧化銅粒子的總質量)成為較佳為0.5以上且4.5以下、更佳為1.0以上且4.0以下的量。若多元醇的總質量相對於氧化銅粒子的總質量之比的值處於該範圍內,則可使氧化銅充分還原,所得的導電膜的導電性更優異。 The content of the polyol in the conductive film-forming composition is not particularly limited, and is a value (the total mass of the polyol/the total mass of the copper oxide particles) of the ratio of the total mass of the polyol to the total mass of the copper oxide particles. It is preferably 0.5 or more and 4.5 or less, more preferably 1.0 or more and 4.0 or less. When the value of the ratio of the total mass of the polyol to the total mass of the copper oxide particles is within this range, the copper oxide can be sufficiently reduced, and the conductive film obtained is more excellent in conductivity.

於導電膜形成用組成物中含有溶劑的情形時,其含量並無特別限定,就抑制導電膜形成用組成物的黏度上升、操作性更優異的方面而言,相對於導電膜形成用組成物的合計質量,較佳為10質量%以上且60質量%以下,更佳為20質量%以上且50質量%以下。 When the solvent is contained in the conductive film-forming composition, the content thereof is not particularly limited, and the composition for forming a conductive film is suppressed from the viewpoint of suppressing the increase in the viscosity of the conductive film-forming composition and the operability. The total mass is preferably 10% by mass or more and 60% by mass or less, more preferably 20% by mass or more and 50% by mass or less.

導電膜形成用組成物的黏度較佳為調整為適合噴墨、網版印刷等印刷用途的黏度。於進行噴墨噴出的情形時,較佳為1cP~50cP,更佳為1cP~40cP。於進行網版印刷的情形時,較佳為1000cP~100000cP,更佳為10000cP~80000cP。 The viscosity of the composition for forming a conductive film is preferably adjusted to a viscosity suitable for printing applications such as inkjet or screen printing. In the case of performing inkjet ejection, it is preferably 1 cP to 50 cP, more preferably 1 cP to 40 cP. In the case of screen printing, it is preferably from 1000 cP to 100,000 cP, more preferably from 10,000 cP to 80,000 cP.

導電膜形成用組成物的製備方法並無特別限制,可採用公知的方法。例如,於向溶劑中添加氧化銅粒子、銅粒子、多元醇以及所需的溶劑及其他成分後,藉由超音波法(例如,利用超音波均質機的處理)、混合機法、三輥法、球磨機法等公知的方法使成分分散,藉此可獲得組成物。 The method for preparing the conductive film-forming composition is not particularly limited, and a known method can be employed. For example, after adding copper oxide particles, copper particles, a polyhydric alcohol, and a solvent and other components to a solvent, an ultrasonic method (for example, treatment using an ultrasonic homogenizer), a mixer method, and a three-roll method are used. A known method such as a ball mill method disperses the components, whereby a composition can be obtained.

[導電膜的製造方法] [Method of Manufacturing Conductive Film]

本發明的導電膜的製造方法至少包括塗膜形成步驟與導電膜形成步驟。以下,對各個步驟進行詳細說明。 The method for producing a conductive film of the present invention includes at least a coating film forming step and a conductive film forming step. Hereinafter, each step will be described in detail.

<塗膜形成步驟> <Coating film forming step>

塗膜形成步驟是將所述導電膜形成用組成物賦予至樹脂基材上而形成塗膜的步驟。藉由本步驟而獲得實施煅燒處理前的塗膜。於後述的導電膜形成步驟前,亦可將塗膜乾燥。 The coating film forming step is a step of forming the conductive film forming composition onto the resin substrate to form a coating film. The coating film before the calcination treatment was obtained by this step. The coating film may be dried before the conductive film forming step described later.

作為本步驟所使用的樹脂基材,可使用公知的樹脂基材。作為樹脂基材,可列舉包含如下基材者:低密度聚乙烯樹脂基材、高密度聚乙烯樹脂基材、丙烯腈丁二烯苯乙烯(Acrylonitrile Butadiene Styrene,ABS)樹脂基材、丙烯酸樹脂基材、苯乙烯樹脂基材、氯乙烯樹脂基材、聚酯樹脂基材(聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)基材、聚萘二甲酸乙二酯(Polyethylene Naphthalate,PEN)基材)、聚縮醛樹脂基材、聚碸樹脂基材、聚醚醯亞胺樹脂基材(聚醯亞胺樹脂基材)、聚醚酮樹脂基材、纖維素衍生物基材、紙-酚樹脂基材(紙酚樹脂基材)、紙-環氧樹脂基材(紙環氧樹脂基材)、紙-聚酯樹脂基材(紙聚酯樹脂基材)、玻璃布-環氧樹脂基材(玻璃環氧樹脂基材)、玻璃布-聚醯亞胺系樹脂基材(玻璃聚醯亞胺樹脂基材)、或玻璃布-氟樹脂基材(玻璃氟樹脂基材)等。該些基材中,較佳為聚對苯二甲酸乙二酯(PET)基材或聚萘二甲酸乙二酯(PEN)基材,更佳為聚對苯二甲酸乙二酯(PET)基材。 As the resin substrate used in this step, a known resin substrate can be used. Examples of the resin substrate include a low-density polyethylene resin substrate, a high-density polyethylene resin substrate, an Aacrylonitrile Butadiene Styrene (ABS) resin substrate, and an acrylic resin base. Material, styrene resin substrate, vinyl chloride resin substrate, polyester resin substrate (polyethylene terephthalate (PET) substrate, polyethylene naphthalate (PEN) Substrate), polyacetal resin substrate, polyfluorene resin substrate, polyether phthalimide resin substrate (polyimine resin substrate), polyether ketone resin substrate, cellulose derivative substrate, paper - phenol resin substrate (paper phenol resin substrate), paper-epoxy substrate (paper epoxy substrate), paper-polyester resin substrate (paper polyester resin substrate), glass cloth - epoxy Resin substrate (glass epoxy substrate), glass cloth-polyimine resin substrate (glass polyimide substrate), glass cloth-fluororesin substrate (glass fluororesin substrate), etc. . Among these substrates, a polyethylene terephthalate (PET) substrate or a polyethylene naphthalate (PEN) substrate, more preferably polyethylene terephthalate (PET), is preferred. Substrate.

再者,樹脂基材的熱分解溫度TD為10%分解溫度(℃), 具體而言,是使用示差熱熱重同時測定裝置(Thermo Gravimetry/Differential Thermal Analyzer,TG/DTA)在氮氣環境中測定熱重時的10%重量減少時的溫度(10%重量減少溫度)(℃)。通常,由於即便為同一種類的樹脂,亦會因分子量或分子量分佈、分支度、交聯密度等導致熱分解動作產生差別,故而存在TD互不相同的情形。 Further, the thermal decomposition temperature T D of the resin substrate is 10% decomposition temperature (° C.), specifically, a thermogravimetry/differential thermal analyzer (TG/DTA) is used in a nitrogen atmosphere. The temperature at which the weight loss was 10% (10% weight reduction temperature) (° C.) when the thermogravimetry was measured. In general, even if it is the same kind of resin, the thermal decomposition operation may be different due to molecular weight, molecular weight distribution, branching degree, crosslinking density, etc., and thus T D may be different from each other.

將導電膜形成用組成物賦予至樹脂基材上的方法並無特別限制,可採用公知的方法。例如,可列舉網版印刷法、浸塗法、噴塗法、旋塗法、噴墨法等塗佈法。 The method of imparting the composition for forming a conductive film to the resin substrate is not particularly limited, and a known method can be employed. For example, a coating method such as a screen printing method, a dip coating method, a spray coating method, a spin coating method, or an inkjet method can be mentioned.

塗佈的形狀並無特別限制,可為覆蓋樹脂基材整個面的面狀,亦可為圖案狀(例如,配線狀、點狀)。 The shape of the coating is not particularly limited, and may be a planar shape covering the entire surface of the resin substrate, or may be a pattern (for example, a wiring shape or a dot shape).

導電膜形成用組成物於樹脂基材上的塗佈量根據所需的導電膜的膜厚來適當調整即可,通常,塗膜的膜厚(厚度)較佳為0.01μm~1000μm,更佳為0.1μm~100μm,進而較佳為0.1μm~50μm,進而更佳為1μm~30μm。 The coating amount of the conductive film-forming composition on the resin substrate may be appropriately adjusted depending on the film thickness of the conductive film to be used. Usually, the film thickness (thickness) of the coating film is preferably 0.01 μm to 1000 μm, more preferably It is 0.1 μm to 100 μm, more preferably 0.1 μm to 50 μm, still more preferably 1 μm to 30 μm.

<乾燥步驟> <drying step>

本步驟是對所形成的塗膜進行乾燥處理而除去溶劑的步驟。本步驟可根據所需於所述塗膜形成步驟後、且後述的導電膜形成步驟前實施。 This step is a step of drying the formed coating film to remove the solvent. This step can be carried out in accordance with the step of forming the conductive film after the coating film forming step and before the conductive film forming step.

藉由除去殘存的溶劑,於導電膜形成步驟中,可抑制由溶劑的氣化膨脹所引起的微小龜裂或空隙的產生,就導電膜的導電性及導電膜與樹脂基材的密著性的方面而言較佳。 By removing the residual solvent, in the conductive film forming step, it is possible to suppress the occurrence of minute cracks or voids caused by vaporization expansion of the solvent, and the conductivity of the conductive film and the adhesion between the conductive film and the resin substrate. In terms of aspects, it is better.

乾燥處理的方法例如:可藉由使用溫風乾燥機等進行加熱而進行乾燥處理,較佳為於低於後述的煅燒溫度的溫度下進行乾燥處理。若具體例示,則作為乾燥溫度,較佳為40℃以上且低於200℃,更佳為50℃以上且低於150℃。 The drying treatment method may be, for example, drying by heating using a warm air dryer or the like, and drying treatment is preferably performed at a temperature lower than a calcination temperature to be described later. Specifically, the drying temperature is preferably 40 ° C or more and less than 200 ° C, more preferably 50 ° C or more and less than 150 ° C.

於本發明中,乾燥處理可於惰性氣體環境中、大氣中等進行,較佳為於惰性氣體環境中進行。 In the present invention, the drying treatment can be carried out in an inert gas atmosphere or in an atmosphere, preferably in an inert gas atmosphere.

<導電膜形成步驟> <Conductive film forming step>

導電膜形成步驟是如下步驟:於TD-50℃以下的煅燒溫度下,藉由煅燒使導電膜中的有機物殘渣量成為1質量%以上且20質量%以下的時間,於藉由塗膜形成步驟在樹脂基材上形成的塗膜上形成導電膜。此處,TD為樹脂基材的熱分解溫度。 The conductive film forming step is a step of forming a film by a coating film at a calcination temperature of T D -50 ° C or lower by calcining the amount of the organic residue in the conductive film to be 1% by mass or more and 20% by mass or less. The step of forming a conductive film on the coating film formed on the resin substrate. Here, T D is the thermal decomposition temperature of the resin substrate.

用以煅燒的加熱機構並無特別限制,可使用烘箱、加熱板等公知的加熱機構。於本發明中,可藉由於相對低溫下進行煅燒處理來形成導電膜,因此,具有製程成本低的優點。 The heating means for calcination is not particularly limited, and a known heating means such as an oven or a hot plate can be used. In the present invention, since the conductive film is formed by performing the calcination treatment at a relatively low temperature, there is an advantage that the process cost is low.

藉由進行煅燒處理,多元醇作為還原劑發揮作用,將氧化銅還原而轉換為金屬銅。更具體而言,藉由實施煅燒處理,將塗膜中的氧化銅粒子還原而生成的金屬銅粒子促進銅粒子彼此的接著.熔著而形成顆粒,進而顆粒彼此接著.熔著而形成銅膜。 By performing the calcination treatment, the polyol acts as a reducing agent, and the copper oxide is reduced to be converted into metallic copper. More specifically, the metal copper particles produced by reducing the copper oxide particles in the coating film by the calcination treatment promote the subsequent adhesion of the copper particles. Melting to form particles, and then the particles are next to each other. Melting to form a copper film.

煅燒處理的溫度(煅燒溫度)只要為TD-50℃以下,則並無特別限定,只要不超過TD-50℃,則較佳為220℃以下,更佳為200℃以下。又,煅燒溫度的下限只要為可將導電膜形成用組成物中的氧化銅還原而轉換為金屬銅的溫度,且為TD-50℃以下,則 並無特別限定,只要不超過TD-50℃,則較佳為150℃以上,更佳為180℃以上。 Calcination process temperature (calcining temperature) or less as long as T D -50 ℃, is not particularly limited, as long as no more than T D -50 ℃, is preferably higher than 220 deg.] C, more preferably higher than 200 ℃. Further, the lower limit of the calcination temperature may be as long as a conductive film for forming the composition of the copper oxide reduction temperature is converted into metallic copper, and is T D -50 ℃ or less, is not particularly limited, as long as no more than T D - 50 ° C, preferably 150 ° C or more, more preferably 180 ° C or more.

煅燒處理的時間(煅燒時間)只要為使導電膜中的有機物殘渣量成為1質量%以上且20質量%以下的時間,則並無特別限定,較佳為成為5質量%以上且10質量%以下的時間。再者,「有機物殘渣量」是殘存在煅燒處理後的導電膜中的有機物量(單位:質量%),可利用示差熱熱重同時測定裝置(TG/DTA),於氮氣環境中將煅燒處理後的導電膜加熱為500℃,根據藉此測定的有機物量的重量減少量而算出。 The time (calcination time) of the calcination treatment is not particularly limited as long as the amount of the organic residue in the conductive film is 1% by mass or more and 20% by mass or less, and is preferably 5% by mass or more and 10% by mass or less. time. In addition, the "organic residue amount" is the amount of organic matter (unit: mass %) remaining in the conductive film after the calcination treatment, and can be calcined in a nitrogen atmosphere by a differential thermal and thermal weight simultaneous measurement device (TG/DTA). The subsequent conductive film was heated to 500 ° C, and was calculated from the amount of weight loss of the organic substance amount measured thereby.

於本發明中,煅燒處理可於惰性氣體環境中、大氣中等進行,較佳為於惰性氣體環境中進行。 In the present invention, the calcination treatment can be carried out in an inert gas atmosphere or in an atmosphere, preferably in an inert gas atmosphere.

[導電膜] [conductive film]

藉由實施所述步驟,而獲得含有金屬銅的導電膜(金屬銅膜)。 By carrying out the above steps, a conductive film (metal copper film) containing metallic copper is obtained.

導電膜的膜厚(厚度)並無特別限制,根據所使用的用途來適當調整為最佳的膜厚。其中,就印刷配線基板用途的方面而言,較佳為0.01μm~1000μm,更佳為0.1μm~100μm,進而較佳為0.1μm~50μm,進而更佳為1μm~30μm。 The film thickness (thickness) of the conductive film is not particularly limited, and is appropriately adjusted to an optimum film thickness depending on the intended use. In particular, the use of the printed wiring board is preferably 0.01 μm to 1000 μm, more preferably 0.1 μm to 100 μm, still more preferably 0.1 μm to 50 μm, still more preferably 1 μm to 30 μm.

再者,膜厚是對導電膜的任意點的厚度測定3個部位以上,將其值進行算術平均而獲得的值(平均值)。 In addition, the film thickness is a value (average value) obtained by measuring the thickness of any point of the conductive film at three or more places and arithmetically averaging the values.

導電膜體積電阻值可藉由利用四探針法來測定導電膜的表面電阻率後,將所得的表面電阻率與膜厚相乘而算出。 The volume resistivity of the conductive film can be calculated by measuring the surface resistivity of the conductive film by a four-probe method and multiplying the obtained surface resistivity by the film thickness.

導電膜可設置於樹脂基材的整個面、或呈圖案狀設置。 圖案狀的導電膜作為印刷配線基板等的導體配線(配線)有用。 The conductive film may be provided on the entire surface of the resin substrate or in a pattern. The patterned conductive film is useful as a conductor wiring (wiring) such as a printed wiring board.

作為獲得圖案狀的導電膜的方法,可列舉:將所述導電膜形成用組成物呈圖案狀賦予至樹脂基材上,進行所述加熱處理的方法;或將設置於樹脂基材整個面的導電膜蝕刻為圖案狀的方法等。 The method of obtaining the patterned conductive film is a method in which the conductive film forming composition is applied to the resin substrate in a pattern, and the heat treatment is performed; or the entire surface of the resin substrate is provided. A method in which a conductive film is etched into a pattern or the like.

蝕刻的方法並無特別限制,可採用公知的減成法、半加成法等。 The method of etching is not particularly limited, and a known subtractive method, semi-additive method, or the like can be employed.

於將圖案狀的導電膜構成為多層配線基板的情形時,可於圖案狀的導電膜的表面進而積層絕緣層(絕緣樹脂層、層間絕緣膜、阻焊層),於該表面形成進一步的配線(金屬圖案)。 When the patterned conductive film is formed as a multilayer wiring substrate, an insulating layer (insulating resin layer, interlayer insulating film, solder resist layer) may be further laminated on the surface of the patterned conductive film to form further wiring on the surface. (metal pattern).

絕緣膜的材料並無特別限制,例如可列舉:環氧樹脂、玻璃環氧樹脂、聚芳醯胺樹脂、結晶性聚烯烴樹脂、非晶性聚烯烴樹脂、含氟樹脂(聚四氟乙烯、全氟化聚醯亞胺、全氟化非晶樹脂等)、聚醯亞胺樹脂、聚醚碸樹脂、聚苯硫醚樹脂、聚醚醚酮樹脂、液晶樹脂等。 The material of the insulating film is not particularly limited, and examples thereof include an epoxy resin, a glass epoxy resin, a polyarylamine resin, a crystalline polyolefin resin, an amorphous polyolefin resin, and a fluorine-containing resin (polytetrafluoroethylene, Perfluoroiminoimine, perfluorinated amorphous resin, etc.), polyimide resin, polyether oxime resin, polyphenylene sulfide resin, polyetheretherketone resin, liquid crystal resin, and the like.

該些中,就密著性、尺寸穩定性、耐熱性、電氣絕緣性等觀點而言,較佳為含有環氧樹脂、聚醯亞胺樹脂、或液晶樹脂者,更佳為環氧樹脂。具體而言,可列舉味之素精細化學(Ajinomoto Fine-Techno)(股)製造的ABF GX-13等。 Among these, from the viewpoints of adhesion, dimensional stability, heat resistance, electrical insulation, and the like, it is preferably an epoxy resin, a polyimide resin, or a liquid crystal resin, and more preferably an epoxy resin. Specifically, ABF GX-13 manufactured by Ajinomoto Fine-Techno Co., Ltd., and the like can be mentioned.

又,作為用於配線保護的絕緣層的材料的一種的阻焊劑,例如詳細記載於日本專利特開平10-204150號公報、或日本專利特開2003-222993號公報等中,視需要亦可將其中所記載的材料應用於本發明中。阻焊劑可使用市售品,具體而言,例如可 列舉:太陽油墨(Taiyo Ink)製造(股)製造的PFR800、PSR4000(商品名)、日立化成工業(股)製造的SR7200G等。 In addition, the solder resist which is one of the materials for the insulating layer for the wiring protection is described in, for example, Japanese Laid-Open Patent Publication No. Hei 10-204150, or Japanese Patent Laid-Open No. 2003-222993, and the like. The materials described therein are used in the present invention. A commercially available product can be used as the solder resist, specifically, for example, For example, PFR800, PSR4000 (trade name) manufactured by Taiyo Ink Co., Ltd., and SR7200G manufactured by Hitachi Chemical Co., Ltd., and the like are listed.

具有所述獲得的導電膜的樹脂基材(附導電膜的樹脂基材)可用於多種用途。例如可列舉:可撓性印刷基板、剛撓性印刷基板、剛性印刷基板、薄膜電晶體(Thin Film Transistor,TFT)、無線射頻辨識系統(Radio Frequency Identification,RFID)等。 The resin substrate (resin substrate with a conductive film) having the obtained conductive film can be used for various purposes. For example, a flexible printed circuit board, a rigid flexible printed circuit board, a rigid printed circuit board, a thin film transistor (TFT), and a radio frequency identification system (RFID) can be mentioned.

[實施例] [Examples]

以下,藉由實施例對本發明進一步進行詳細說明,但本發明並不限定於該些實施例。 Hereinafter, the present invention will be further described in detail by way of examples, but the invention is not limited thereto.

[實施例1] [Example 1] <導電膜形成用組成物的製備> <Preparation of a composition for forming a conductive film>

添加氧化銅粒子1(平均粒徑40nm;C.I.化成公司製造,NanoTek(R)CuO)(100質量份)、銅粒子1(平均粒徑3μm;三井金屬礦業公司製造,片狀銅粉1200YP)(250質量份)、抗壞血酸(300質量份)及水(超純水)(500質量份),利用自轉公轉混合機(新基(THINKY)公司製造,消泡練太郎ARE-310)處理5分鐘,藉此獲得導電膜形成用組成物。 Copper oxide particles 1 (average particle diameter: 40 nm; manufactured by CI Chemical Co., Ltd., NanoTek (R) CuO) (100 parts by mass), copper particles 1 (average particle diameter: 3 μm; manufactured by Mitsui Mining & Mining Co., Ltd., sheet-like copper powder 1200 YP) were added. 250 parts by mass), ascorbic acid (300 parts by mass), and water (ultra-pure water) (500 parts by mass) were treated by a self-rotating revolution mixer (manufactured by THINKY Co., Ltd., defoaming Ryotaro ARE-310) for 5 minutes. Thereby, a composition for forming a conductive film is obtained.

<導電膜的製作> <Production of Conductive Film>

於PET基材(TD=320℃;富士軟片(Fujifilm Business Supply)公司製造,FUJIX OHP FILM)上,將所得的導電膜形成用組成物塗佈為條紋狀(L/S=1mm/1mm),其後,於100℃下乾燥10分鐘,藉此獲得圖案印刷有導電膜形成用組成物層的塗膜。其後,使用 RTA燒結裝置(奧威(Allwin21)公司製造,AccuThermo),加熱至180℃,保持導電膜中的有機物殘渣量成為5質量%的時間,其後,冷卻至1040℃並取出樣品,藉此獲得導電膜。 The obtained conductive film-forming composition was applied in a stripe shape (L/S = 1 mm/1 mm) on a PET substrate (T D = 320 ° C; manufactured by Fujifilm Business Supply Co., Ltd., FUJIX OHP FILM). Then, it was dried at 100 ° C for 10 minutes to obtain a coating film in which a composition layer for forming a conductive film was printed. Then, using an RTA sintering apparatus (Accom Thermo), heated to 180 ° C, the amount of organic residue in the conductive film was kept at 5% by mass, and then cooled to 1040 ° C and the sample was taken out. Thereby, a conductive film was obtained.

此處,有機物殘渣量是藉由示差熱熱重同時測定裝置(TG/DTA),於氮氣環境中將煅燒處理後的導電膜加熱至500℃,根據所測定的有機物量的重量減少量而算出。 Here, the amount of the organic residue is obtained by heating the conductive film after the calcination treatment to 500 ° C in a nitrogen atmosphere by a differential thermal and thermal weight simultaneous measurement device (TG/DTA), and calculating the weight reduction amount based on the measured organic matter amount. .

<樹脂基材的翹曲的評價> <Evaluation of warpage of resin substrate>

對於所得的附導電膜的樹脂基材(於本評價項目中,以下稱為「試樣」),藉由JIS C 6481:1996的5.22中記載的方法,以0.1mm為單位測定平板與試樣的邊之間的間隔。評價基準如以下所述。再者,實用上,較理想為A評價或B評價。將評價的結果示於表1的相應欄中。 With respect to the obtained resin substrate with a conductive film (hereinafter referred to as "sample" in the evaluation item), the plate and the sample were measured in units of 0.1 mm by the method described in 5.22 of JIS C 6481:1996. The spacing between the edges. The evaluation criteria are as follows. Furthermore, in practice, it is preferable to use an A evaluation or a B evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

A:平板與試樣的邊的間隔為0.5mm以下。 A: The interval between the flat plate and the side of the sample is 0.5 mm or less.

B:平板與試樣的邊的間隔超過0.5mm且為1.0mm以下。 B: The interval between the flat plate and the side of the sample exceeds 0.5 mm and is 1.0 mm or less.

C:平板與試樣的邊的間隔超過1.0mm且為2.0mm以下。 C: The interval between the flat plate and the side of the sample exceeds 1.0 mm and is 2.0 mm or less.

D:平板與試樣的邊的間隔超過2.0mm且為5.0mm以下。 D: The interval between the flat plate and the side of the sample exceeds 2.0 mm and is 5.0 mm or less.

E:平板與試樣的邊的間隔超過5.0mm。 E: The distance between the flat plate and the side of the sample exceeds 5.0 mm.

<導電膜的密著性的評價> <Evaluation of Adhesion of Conductive Film>

將玻璃紙膠帶(寬24mm、米其邦(Nichiban)公司製造)密著於所得的導電膜後剝離。以目視觀察剝離後的導電膜的外觀,評價密著性。評價基準如以下所述。再者,實用上,較理想為A評價或B評價。將評價的結果示於表1的相應欄中。 A cellophane tape (24 mm in width, manufactured by Nichiban Co., Ltd.) was adhered to the obtained conductive film and peeled off. The appearance of the peeled conductive film was visually observed, and the adhesion was evaluated. The evaluation criteria are as follows. Furthermore, in practice, it is preferable to use an A evaluation or a B evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

A:於膠帶上未觀察到附著有導電膜,亦未觀察到導電膜與樹脂基材的界面處的剝離。 A: No conductive film was observed on the tape, and peeling at the interface between the conductive film and the resin substrate was not observed.

B:於膠帶上觀察到稍微附著有導電膜,但未觀察到導電膜與樹脂基材的界面處的剝離。 B: A conductive film was slightly adhered to the tape, but peeling at the interface between the conductive film and the resin substrate was not observed.

C:於膠帶上清晰可見附著有導電膜,且觀察到導電膜與樹脂基材的界面處的剝離的面積小於5%。 C: A conductive film was clearly observed on the tape, and the area of peeling at the interface between the conductive film and the resin substrate was observed to be less than 5%.

D:於膠帶上清晰可見附著有導電膜,且觀察到導電膜與樹脂基材的界面處的剝離的面積為5%以上且小於50%。 D: A conductive film was clearly observed on the tape, and the area of peeling at the interface between the conductive film and the resin substrate was observed to be 5% or more and less than 50%.

E:於膠帶上清晰可見附著有導電膜,且觀察到導電膜與樹脂基材的界面處的剝離的面積為50%以上。 E: A conductive film was clearly observed on the tape, and the area of peeling at the interface between the conductive film and the resin substrate was observed to be 50% or more.

<導電膜的導電性的評價> <Evaluation of Conductivity of Conductive Film>

對於所得的導電膜,使用四探針法電阻率計測定體積電阻率,對導電性進行評價。評價基準如以下所述。再者,實用上,較理想為A評價或B評價。將評價的結果示於表1的相應欄中。 With respect to the obtained conductive film, the volume resistivity was measured using a four-probe method resistivity meter, and the conductivity was evaluated. The evaluation criteria are as follows. Furthermore, in practice, it is preferable to use an A evaluation or a B evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

A:體積電阻率小於50μΩ.cm。 A: The volume resistivity is less than 50μΩ. Cm.

B:體積電阻率為50μΩ.cm以上且小於100μΩ.cm。 B: The volume resistivity is 50 μΩ. Above cm and less than 100μΩ. Cm.

C:體積電阻率為100μΩ.cm以上且小於1000μΩ.cm。 C: The volume resistivity is 100 μΩ. Above cm and less than 1000μΩ. Cm.

D:體積電阻率為1000μΩ.cm以上。 D: The volume resistivity is 1000 μΩ. More than cm.

[實施例2、實施例3] [Example 2, Example 3]

將煅燒溫度變更為表1所示的溫度,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the firing temperature was changed to the temperature shown in Table 1, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例4] [Example 4]

使用PEN基材(帝人杜邦薄膜(Teijin DuPont Films)公司製造、Teonex、TD=410℃)代替PET基材,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that a PEN substrate (manufactured by Teijin DuPont Films Co., Ltd., Teonex, T D = 410 ° C) was used instead of the PET substrate, and the resin substrate was prepared. The warpage, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例5、實施例6] [Example 5, Example 6]

以有機物殘渣量成為表1所示的量的方式變更加熱時間,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the amount of the organic residue was changed to the amount shown in Table 1, and warpage of the resin substrate, adhesion of the conductive film, and conductivity were performed. Sexual evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例7] [Embodiment 7]

使用氧化銅粒子2(平均粒徑80nm;依歐利特科公司製造,NO-0031-HP)(100質量份)代替氧化銅粒子1(100質量份),除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 Copper oxide particles 2 (average particle diameter: 80 nm; manufactured by Eoltek Co., Ltd., NO-0031-HP) (100 parts by mass) were used instead of the copper oxide particles 1 (100 parts by mass), and Example 1 was used. A conductive film was produced in the same manner, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例8、實施例9] [Embodiment 8, Example 9]

將銅粒子1的含量變更為表1所示的量,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the content of the copper particles 1 was changed to the amount shown in Table 1, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were performed. Evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例10] [Embodiment 10]

使用銅粒子2(平均粒徑17μm;三井金屬礦業公司製造,微 粒霧化銅粉MA-CJF)代替銅粒子1(250質量份),除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 Use copper particles 2 (average particle size 17 μm; manufactured by Mitsui Mining & Mining Co., Ltd., Micro A conductive film was produced in the same manner as in Example 1 except for the copper particle 1 (250 parts by mass), and the warpage of the resin substrate and the adhesion of the conductive film were observed. And conductivity was evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例11] [Example 11]

使用二羥丙酮(300質量份)代替抗壞血酸(300質量份),除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that dihydroxyacetone (300 parts by mass) was used instead of ascorbic acid (300 parts by mass), and warpage of the resin substrate, adhesion of the conductive film, and conduction were performed. Sexual evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例12、實施例13] [Example 12, Example 13]

將抗壞血酸的含量變更為表1所示的量,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the content of the ascorbic acid was changed to the amount shown in Table 1, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[實施例14、實施例15] [Example 14, Example 15]

如表1所示在N2(氮氣)環境中或大氣中進行煅燒處理,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the calcination treatment was carried out in an N 2 (nitrogen) atmosphere or in the atmosphere as shown in Table 1, and warpage of the resin substrate and adhesion of the conductive film were carried out. Evaluation of properties and conductivity. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例1] [Comparative Example 1]

將煅燒溫度設為290℃,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the calcination temperature was changed to 290 ° C, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例2、比較例3] [Comparative Example 2, Comparative Example 3]

以有機物殘渣量成為表1所示的量的方式變更加熱時間,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the amount of the organic residue was changed to the amount shown in Table 1, and warpage of the resin substrate, adhesion of the conductive film, and conductivity were performed. Sexual evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例4] [Comparative Example 4]

除了不含有氧化銅粒子的方面以外,以與實施例1相同的方式獲得導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was obtained in the same manner as in Example 1 except that the copper oxide particles were not contained, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例5] [Comparative Example 5]

除了不含有銅粒子的方面以外,以與實施例1相同的方式獲得導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was obtained in the same manner as in Example 1 except that the copper particles were not contained, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例6] [Comparative Example 6]

不含有銅粒子,且使用二乙二醇(300質量份)代替抗壞血酸(300質量份),除此以外,以與實施例1相同的方式獲得導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was obtained in the same manner as in Example 1 except that the copper particles were not contained, and diethylene glycol (300 parts by mass) was used instead of ascorbic acid (300 parts by mass), and the resin substrate was warped and electrically conductive. The adhesion and conductivity of the film were evaluated. The results of the evaluation are shown in the corresponding columns of Table 1.

[比較例7、比較例8] [Comparative Example 7 and Comparative Example 8]

將銅粒子1的含量變更為表1所示的量,除此以外,以與實施例1相同的方式製作導電膜,並對樹脂基材的翹曲、導電膜的密著性及導電性進行評價。將評價的結果示於表1的相應欄中。 A conductive film was produced in the same manner as in Example 1 except that the content of the copper particles 1 was changed to the amount shown in Table 1, and the warpage of the resin substrate, the adhesion of the conductive film, and the conductivity were performed. Evaluation. The results of the evaluation are shown in the corresponding columns of Table 1.

實施例1~實施例15的樹脂基材的翹曲、導電膜的密著性及導電性均優異,比較例1~比較例8的導電膜的樹脂基材的翹曲、導電膜的密著性及導電性中至少1方面差。 The resin substrate of Examples 1 to 15 was excellent in warpage, adhesion of the conductive film, and conductivity, and warpage of the resin substrate of the conductive films of Comparative Examples 1 to 8 and adhesion of the conductive film. At least one of the properties and conductivity is poor.

根據實施例1~實施例3的對比,可確認煅燒溫度低者樹脂基材的翹曲得到抑制。 According to the comparison of Examples 1 to 3, it was confirmed that the warpage of the resin substrate having a low firing temperature was suppressed.

根據實施例1及實施例6的對比,可確認有機物殘渣量為5質量%以上的實施例1與小於5質量%的實施例6相比,導電膜的密著性更優異。 According to the comparison between the first embodiment and the sixth embodiment, in the first embodiment, the amount of the organic residue was 5% by mass or more, and the adhesion of the conductive film was more excellent than that of the example 6 of less than 5% by mass.

又,根據實施例1及實施例5的對比,可確認有機物殘渣量為10質量%以下的實施例1與超過10質量%的實施例5相比,導電膜的導電性更優異。 Further, according to the comparison between Example 1 and Example 5, it was confirmed that the conductive film was more excellent in the first embodiment than in Example 5 in which the amount of the organic residue was 10% by mass or less and more than 10% by mass.

根據實施例1及實施例7的對比,可確認氧化銅粒子的平均粒徑為20nm以上且50nm以下的範圍內的實施例1與處於該範圍外的實施例7相比,導電膜的導電性更優異。 According to the comparison between the first embodiment and the seventh embodiment, the conductivity of the conductive film of Example 1 in which the average particle diameter of the copper oxide particles was in the range of 20 nm or more and 50 nm or less was compared with Example 7 outside the range. More excellent.

根據實施例1及實施例8的對比,可確認銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子的總質量/氧化銅粒子的總質量)為2.0以上的實施例1與小於2.0的實施例8相比,樹脂基材的翹曲得到抑制,導電膜的導電性更優異。 According to the comparison between Example 1 and Example 8, it was confirmed that the value of the ratio of the total mass of the copper particles to the total mass of the copper oxide particles (the total mass of the copper particles / the total mass of the copper oxide particles) was 2.0 or more. 1 The warpage of the resin substrate was suppressed as compared with Example 8 of less than 2.0, and the conductivity of the conductive film was more excellent.

又,根據實施例1及實施例9的對比,可確認銅粒子的總質量相對於氧化銅粒子的總質量之比的值(銅粒子的總質量/氧化銅粒子的總質量)為6.0以下的實施例1與超過6.0的實施例8相比,導電性更優異。 Further, according to the comparison between Example 1 and Example 9, it was confirmed that the ratio of the total mass of the copper particles to the total mass of the copper oxide particles (the total mass of the copper particles / the total mass of the copper oxide particles) was 6.0 or less. In Example 1, the conductivity was more excellent than that of Example 8 exceeding 6.0.

根據實施例1及實施例10的對比,可確認銅粒子的平均粒徑為0.1μm以上且10μm以下的範圍內的實施例1與處於該範圍外的實施例10相比,導電膜的密著性及導電性更優異。 According to the comparison between the first embodiment and the tenth embodiment, it was confirmed that the first embodiment of the copper particles was in the range of 0.1 μm or more and 10 μm or less, and the adhesion of the conductive film was compared with that of the example 10 outside the range. Excellent in properties and conductivity.

根據實施例1、實施例12及實施例13的對比,可確認多元醇的總質量相對於氧化銅粒子的總質量之比的值(多元醇的總質量/氧化銅粒子的總質量)為1.0以上且4.0以下的範圍內的實施例1與處於該範圍外的實施例12及實施例13相比,導電膜的導電性更優異。 According to the comparison of Example 1, Example 12 and Example 13, it was confirmed that the ratio of the total mass of the polyol to the total mass of the copper oxide particles (total mass of the polyol / total mass of the copper oxide particles) was 1.0. In the first embodiment and in the range of 4.0 or less, the conductive film is more excellent in conductivity than the example 12 and the example 13 outside the range.

根據實施例1、實施例14及實施例15的對比,可確認於惰性氣體環境中進行煅燒處理的實施例1及實施例14與於大氣中進行煅燒處理的實施例15相比,導電膜的密著性及導電性更優異。 According to the comparison of Example 1, Example 14 and Example 15, it was confirmed that Example 1 and Example 14 which were subjected to the calcination treatment in an inert gas atmosphere were compared with Example 15 which was subjected to calcination treatment in the atmosphere, and the conductive film was Adhesion and conductivity are more excellent.

Claims (12)

一種導電膜的製造方法,其包括:塗膜形成步驟,將導電膜形成用組成物賦予至具有熱分解溫度TD的樹脂基材上而形成塗膜,所述導電膜形成用組成物含有氧化銅粒子、銅粒子、及多元醇,所述銅粒子的總質量相對於所述氧化銅粒子的總質量之比的值為1.0以上且8.0以下,且不含因熱或光而硬化的有機化合物;導電膜形成步驟,於TD-50℃以下的煅燒溫度下,以導電膜中的有機物殘渣量成為1質量%以上且20質量%以下的方式對所述塗膜進行煅燒處理而形成含有金屬銅的導電膜。 A method for producing a conductive film, comprising: a coating film forming step of applying a composition for forming a conductive film to a resin substrate having a thermal decomposition temperature T D to form a coating film, wherein the conductive film forming composition contains oxidation The copper particles, the copper particles, and the polyol, wherein the ratio of the total mass of the copper particles to the total mass of the copper oxide particles is 1.0 or more and 8.0 or less, and does not contain an organic compound which is hardened by heat or light. In the conductive film forming step, the coating film is calcined to form a metal containing material so that the amount of the organic residue in the conductive film is 1% by mass or more and 20% by mass or less at a calcination temperature of T D -50 ° C or lower. A conductive film of copper. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述煅燒溫度為220℃以下。 The method for producing a conductive film according to claim 1, wherein the calcination temperature is 220 ° C or lower. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述煅燒溫度為200℃以下。 The method for producing a conductive film according to claim 1, wherein the calcination temperature is 200 ° C or lower. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述有機物殘渣量為5質量%以上且10質量%以下。 The method for producing a conductive film according to the first aspect of the invention, wherein the organic residue amount is 5% by mass or more and 10% by mass or less. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述銅粒子的總質量相對於所述氧化銅粒子的總質量之比的值為2.0以上且6.0以下。 The method for producing a conductive film according to claim 1, wherein a ratio of a total mass of the copper particles to a total mass of the copper oxide particles is 2.0 or more and 6.0 or less. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述多元醇的總質量相對於所述氧化銅粒子的總質量之比的值為1.0以上且4.0以下。 The method for producing a conductive film according to claim 1, wherein a ratio of a total mass of the polyol to a total mass of the copper oxide particles is 1.0 or more and 4.0 or less. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述樹脂基材為聚對苯二甲酸乙二酯基材或聚萘二甲酸乙二酯基材。 The method for producing a conductive film according to claim 1, wherein the resin substrate is a polyethylene terephthalate substrate or a polyethylene naphthalate substrate. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述多元醇為抗壞血酸或二羥丙酮。 The method for producing a conductive film according to claim 1, wherein the polyol is ascorbic acid or dihydroxyacetone. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述氧化銅粒子的平均粒徑為20nm以上且50nm以下。 The method for producing a conductive film according to the first aspect of the invention, wherein the copper oxide particles have an average particle diameter of 20 nm or more and 50 nm or less. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述銅粒子的平均粒徑為0.1μm以上且10μm以下。 The method for producing a conductive film according to the first aspect of the invention, wherein the copper particles have an average particle diameter of 0.1 μm or more and 10 μm or less. 如申請專利範圍第1項所述的導電膜的製造方法,其中所述煅燒處理是在惰性氣體環境中進行。 The method for producing a conductive film according to claim 1, wherein the calcination treatment is carried out in an inert gas atmosphere. 一種導電膜,其是藉由如申請專利範圍第1項至第11項中任一項所述的導電膜的製造方法而製造。 A conductive film produced by the method for producing a conductive film according to any one of claims 1 to 11.
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