TW201503995A - Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing - Google Patents

Abstract

A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects.

Description

Apparatus and method for acoustic monitoring and control of exposure processing of through-hole perforation [related application]

This application claims an application and method entitled "APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING", which was applied for on May 1, 2013. The priority of U.S. Non-Provisional Patent Application Serial No. 13/874,495 (Attorney Docket No. 20654/USA), which is incorporated herein in its entirety by reference in its entirety herein in its entirety.

The large system of the present invention relates to semiconductor device fabrication, and more particularly to backside chemical mechanical polishing of TSV (straight through bore).

Chemical mechanical polishing (CMP), also known as chemical mechanical planarization, is commonly used in processes for fabricating integrated circuits (ICs) on semiconductor substrates. CMP The process can remove topographical features and materials from the partially processed substrate to create a flat surface for subsequent processing. The CMP process can use abrasive and/or chemically active polishing fluid on one or more rotating polishing pads that press against the surface of the substrate. The substrate can be supported in the substrate holder to rotate the substrate. The substrate holder can also oscillate the substrate back and forth across the surface of the rotating polishing pad.

When manufacturing ICs, 3D packages can be used to increase the power of small footprints Road function and / or performance. The three-dimensional package may involve an inscribed IC wafer that is stacked on top of each other using TSVs (straight through vias) to electrically connect the stacked IC wafers. The TSV is a vertical electrical conductor that extends through the substrate. To enter the TSV from the back side of the substrate (for another IC underneath subsequent electrical connections), CMP can be used in the TSV exposure process. The TSV exposure process can include grinding and etching the back side of the substrate to expose the as stub of the TSV protruding back side. The dielectric film is then deposited onto the back side. The CMP is used to remove the protruding stump and ground the back surface to a predetermined dielectric film thickness to complete the TSV exposure process. However, TSV breaks (ie, one or more stump breaks) can damage the substrate. Therefore, the TSV exposure process is improved.

According to one aspect, it is provided for chemical mechanical polishing (CMP) equipment. Platform. The platform includes a disk-shaped substrate configured to receive a polishing pad on a surface of the disk-shaped substrate, the disk-shaped substrate has at least a through hole, and an acoustic sensor, the acoustic sensor being placed in at least the through hole and protruding The surface of the disc substrate, the acoustic sensor is configured to electrically couple the controller.

According to another aspect, a chemical mechanical polishing (CMP) apparatus is provided, The CMP device is configured for a CMP process. The CMP apparatus includes a platform including a polishing pad, a substrate holding member, and a substrate holding member configured to support the base to be ground a plate, wherein the platform or substrate holder is configured to contact the substrate with the polishing pad; an acoustic sensor, the acoustic sensor is disposed adjacent to the polishing pad or substrate during the CMP process; and the acoustic processor, the acoustic processor is electrically coupled to the acoustic A sensor and configured to analyze one or more signals received by the acoustic sensor to detect a TSV (straight through bore) break.

According to yet another aspect, monitoring and control of through-through perforation (TSV) is provided The method of revealing the process. The method includes processing a substrate by a chemical mechanical polishing (CMP) process, sensing the sound of the CMP process, and analyzing the sound to detect TSV breakage.

Other aspects of the present invention will be more readily apparent from the following detailed description. The present invention has been described and illustrated with respect to the exemplary embodiments and embodiments thereof The invention may also be embodied in other and different embodiments, and various details may be modified in various aspects without departing from the scope of the invention. Therefore, the schema and narrative should be regarded as illustrative, not limiting. The drawings are not necessarily to scale. The present invention covers all modifications, equivalents, and alternatives falling within the scope of the invention.

100‧‧‧Substrate

102A, 102B, 102C‧‧‧ back

104‧‧‧ basal layer

106‧‧‧metal layer

108‧‧‧TSV

109‧‧‧ top surface

110‧‧‧Barrier layer

111‧‧‧ dish-shaped depression

112‧‧‧ dielectric layer

113‧‧‧ Surface

200‧‧‧Substrate

202‧‧‧ surface

208‧‧‧TSV

300‧‧‧Substrate

302‧‧‧Back

304‧‧‧ basal layer

306‧‧‧metal layer

308a, 308b‧‧‧TSV

310‧‧‧Barrier layer

312‧‧‧ dielectric layer

315‧‧‧ boring

400‧‧‧Substrate

402‧‧‧ Surface

408‧‧‧TSV

414‧‧‧Metal pad

500‧‧‧CMP system

501‧‧‧Substrate

516‧‧‧ polishing pad

518‧‧‧ platform

520‧‧‧ shaft

522‧‧‧Retaining parts

524‧‧‧Slurry

526‧‧‧Distributor

528‧‧‧Slurry supply

530‧‧‧ pump

532‧‧‧ valve

534a, 534b‧‧‧ sensor

536a, 536b‧‧‧ signal wiring

538‧‧‧Acoustic processor

540‧‧‧System Controller

542‧‧‧ processor

600‧‧‧ components

616‧‧‧ polishing pad

617‧‧‧ surface

618‧‧‧ platform

619‧‧‧ bottom

621‧‧‧Abrased surface

633a-c‧‧‧through hole

634a-c‧‧‧ sensor

635a-c‧‧‧non-through holes

644‧‧‧ disc base

646a-c‧‧‧Connector

700‧‧‧ method

702, 704, 706, 708, 710, 712, 714‧‧‧ blocks

D1, D2, D3‧‧‧ distance

H‧‧‧ Height

The following figures are for illustrative purposes only. The drawings are not intended to limit the scope of the invention in any way.

1A to 1C are diagrams showing a continuous cross-sectional view of a semiconductor substrate exposed by TSV (straight through-perforation) without TSV fracture according to the prior art.

Figure 2 illustrates a TSV without fracture according to the prior art.

Figure 3 illustrates a semiconductor substrate with TSV fracture according to the prior art. Board profile.

Figure 4 illustrates a TSV with a break according to the prior art.

Figure 5 illustrates a partial side view of a chemical mechanical polishing (CMP) system, in accordance with an embodiment.

6A and 6B respectively illustrate top and side cross-sectional views (cut along line 6B-6B of Figure 6A) of the polishing pad of the platform and CMP system, in accordance with an embodiment.

Figure 7 illustrates a flow chart of a method of monitoring and controlling a TSV exposure process, in accordance with an embodiment.

Exemplary embodiments of the present invention will now be described in detail, which are illustrated in the accompanying drawings. Wherever possible, the same or similar elements in the various figures are denoted by the same reference numerals.

In one aspect, a CMP (Chemical Mechanical Polishing) TSV (through-pass perforation) exposure process can be acoustically monitored and controlled to detect TSV breaks and automatically respond to the TSV break. In some IC fabrication processes, when the TSV aspect ratio (ie, the exposed TSV stub height versus TSV diameter) becomes high (eg, the TSV has a small diameter), TSV fracture will occur more often during CMP. The high aspect ratio TSV allows the IC to have a larger wafer-to-wafer interconnect density. However, the high aspect ratio TSV is less rigid, so that it is more susceptible to breakage during the CMP process that removes the TSV stump from the back side of the substrate.

One or more acoustic sensors can be provided in the CMP system to receive sound waves during the CMP process. One or more acoustic sensors can be coupled to, for example, a substrate holder and/or a polishing pad platform. In some embodiments, the polishing pad platform has a Or more integrated in the acoustic sensor, the acoustic sensor extends into the polishing pad mounted on the polishing pad platform.

In some embodiments, the sound emitted by one or more acoustic sensors is analyzed using a system controller and/or an acoustic processor to detect TSV breaks. The acoustic processor can be part of a CMP system controller, or the acoustic processor can be a separate, separate component that couples to the CMP system controller. In response to detecting a TSV break, the system controller and/or the acoustic processor can automatically initiate one or more remedial actions. For example, in some embodiments, the operator TSV can be notified to break. Additionally or alternatively, the downforce of the substrate or the polishing pad abutting each other may be preset to be reduced by a predetermined amount, the rotational speed of the polishing pad and/or the substrate is decreased by a predetermined amount, and/or the acoustic processor, and / or combine the two to automatically modify the CMP process. In some embodiments, the CMP process can be automatically stopped in response to detecting a TSV break and/or the endpoint routine transferred to the system controller can be controlled.

In other aspects, a method of monitoring and controlling the TSV exposure process is provided, which will be detailed later in conjunction with Figures 1A through 7.

FIGS. 1A through 1C illustrate a substrate 100 processed by a TSV exposure process. According to the prior art, the TSV exposure process is referred to as a BVR (Back Side Perforation Exposure) CMP process. Figure 1A illustrates a substrate 100 having a back side 102A that has been processed by the TSV exposure process portion. The substrate 100 may have a germanium base layer 104, a metal (eg, copper) layer 106, a plurality of TSVs 108 extending from the metal layer 106 and protruding from the base layer 104, a barrier layer 110 covering the TSV 108 and the metal layer 106, and a back surface 102A. Dielectric layer 112. In some fabrication processes, the height H of the TSV 108 can be higher than the 矽 base layer 104, the height H can be from about 2 micrometers (μm) to about 4 μm, and the height H can vary from TSV 108. As shown in Figure 1B and 1C As shown, the substrate 100 with the back side 102A can be placed in a CMP system for further TSV exposure processing.

FIG. 1B illustrates a substrate 100 having a further processed back surface 102B, The dielectric layer 112 and the barrier layer 110 have been removed from the top surface 109 of the TSV 108 using a CMP process. The CMP process can continue to remove the material and/or polish the back side 102B of the substrate 100 until the back side 102C of Figure 1C is formed, but no TSV breakage occurs. As shown in FIG. 1C, the TSV 108 can be flush with the surface 113 of the dielectric layer 112, or the TSV 108 can be slightly below the surface 113 in some fabrication processes until a predetermined thinner dielectric layer 112 is achieved. As shown, the end faces of the TSVs 108 may create some copper dishing depressions 111. Finally, a soft buffer can be provided to control surface processing and remove small surface defects and flaws. If TSV rupture does not occur, the final surface condition of the substrate 100 will be as shown in FIG. 1C after the TSV exposure process is completed.

FIG. 2 illustrates that the substrate 200 is in the TSV exposure process and has no TSV. After the fracture, the substrate has a TSV 208 and a surrounding backside substrate surface 202.

Figure 3 illustrates the processed back side 302 and TSV according to the prior art. The broken substrate 300. TSV rupture can cause scratches and/or defects that cannot be repeated throughout the surface of the substrate, which can adversely affect IC wafer yield and reliability. The substrate 300 has a germanium base layer 304, a metal (eg, copper) layer 306, TSVs 308a, 308b, a barrier layer 310, and a dielectric layer 312. TSV 308b breaks during the CMP process. This fracture will cause the oxide crater 315, causing the ruthenium layer 304 to be contaminated with metal during processing. In some embodiments, TSV 308b is comprised, for example, of copper, a relatively soft material of copper. During post-package electronic testing, TSV breaks lead to copper coating Wiping on the layer 304 may affect IC quality and/or reliability.

Figure 4 illustrates a micrograph of the substrate 400 after TSV rupture, the substrate There is a TSV 408 and a surrounding backside substrate surface 402. As shown, TSV 408 produces substantial surface scratches and defects after rupture during the CMP process. In addition, metal grains extracted due to TSV rupture may cause, for example, metal pad 414 (ie, the top surface of TSV 408) to fail to meet one or more specifications required for further processing, further affecting IC yield and/or reliability. .

Figure 5 illustrates chemical mechanical polishing in accordance with one or more embodiments (CMP) system 500. The CMP system 500 is configured to contact the substrate 501 with the polishing pad 516, and the CMP system 500 is used to perform a CMP process on the substrate 501 as part of the TSV exposure process. The substrate 501 can be a germanium containing wafer, such as a patterned wafer including a partially or fully formed transistor and a plurality of TSVs. The substrate 501 can be fixed (eg, with an adhesive) to a second carrier wafer or other suitable substrate to perform a TSV exposure process on the substrate 501. The polishing pad 516 is mounted on a platform 518 that can be disk shaped and rotated by a suitable motor (not shown) that is coupled to the platform 518 by a shaft 520. Platform 518 can be rotated at approximately 10-200 rpm. Other speeds can be used.

The substrate 501 can be supported in the substrate holder 522. The substrate holder can also be referred to as a holder or carrier head. In some embodiments, the substrate 501 is supported by the substrate holder 522 through a vacuum. Other suitable substrate support techniques can be employed. In some embodiments, the substrate holder 522 is configured to move the substrate 501 (ie, up and down as shown) to bring the substrate 501 into contact with or away from the polishing pad 516. The substrate holder 522 is rotatable. In some embodiments, when the polishing pad 516 rotates to contact the back surface of the substrate 501, the substrate holder can swing back and forth. The surface of the pad 516. In some embodiments, the substrate holder 522 has a swing rate of between about 0.1 mm/sec and 5 mm/sec. Other swing rates can be used. In some embodiments, the substrate holder 522 is rotated at about 10-200 rpm. Other speeds can be used. The swing can be made between the center and the radial side of the polishing pad 516. In some embodiments, the substrate holder 522 is a contour 5 zone pressure head from Applied Materials, Inc., Santa Clara, California.

In other embodiments, the polishing pad 516 / platform 518 and substrate 501 / The position of the substrate holder 522 can be reversed. That is, the polishing pad 516 and the platform 518 can be part of an overhead assembly or a polishing head or mounted on an overhead assembly or a polishing head configured to move the polishing pad 516 such that the polishing pad 516 moves upwardly or downwardly into contact with the substrate holder. The back surface of the substrate 501 of the 522 support.

Slurry 524 (chemical slurry) can be applied to the polishing pad 516, and The slurry 524 can be fed by the dispenser 526 between the polishing pad 516 and the substrate 501. The dispenser 526 can be coupled to the slurry supply 528 via one or more suitable conduits. Pump 530, valve 532, or other liquid transport and transfer mechanism can meter supply slurry 524 to the surface of polishing pad 516. In some embodiments, the slurry 524 is dispensed by the dispenser 526 onto the surface of the polishing pad 516 in front of the substrate 501 such that the slurry 524 can be received in front of the substrate 501 and rotated over the polishing pad 516 to the substrate 516 and the substrate. The slurry 524 is drawn between 501.

In some embodiments, CMP system 500, one or more parts or equivalents based on Santa Clara, California, such as Applied Materials, Inc. Reflexion® GT ^TM CMP system parts.

The CMP system 500 can also include one or more acoustic sensors 534a And/or 534b, the acoustic sensor operates to sense the CMP processing of the substrate 501 The sound of life. In some embodiments, CMP system 500 includes only one acoustic sensor 534a or 534b. In other embodiments, CMP system 500 includes acoustic sensors 534a and 534b. In still other embodiments, the CMP system 500 includes more than two acoustic sensors, and the acoustic sensors can be located at locations other than the illustrated acoustic sensors 534a, 534b.

Acoustic sensors 534a and/or 534b may be used during the CMP process Adjacent to the polishing pad 516 and/or the substrate 501. In some embodiments, acoustic sensor 534a can be physically coupled to platform 518 (or overhead grinding head) in any suitable manner. For example, the acoustic sensor 534a can be mounted in a bracket that is mechanically secured to the platform 518. In some embodiments, platform 518 is an assembly that includes an upper platform and a lower platform (not shown) that are attached to the lower platform. The upper platform has a polishing pad 516 mounted on the upper platform, wherein the acoustic sensor 534a can be integrated or mounted under the upper platform, such as by a bracket or other suitable mechanism, or integrated or mounted on the outer edge of the platform. In some embodiments, the bracket or other suitable mechanism includes a spring loaded mechanism to ensure that the acoustic sensor 534a remains in constant contact with the polishing pad. In some embodiments, the bracket or other suitable mechanism includes a cushion to reduce signal attenuation or degradation. In some embodiments, the power and signal cables (which may be at least partially represented by signal connections 536a) are pulled by the platform 518 (or the lower platform of the platform assembly described above) and via a high frequency (eg, about 1 MHz) 8-terminal collection. The ring is connected to a sensor 534a. In some embodiments, acoustic sensor 534b can be physically coupled to substrate holder 522 in any suitable manner in addition to or in lieu of acoustic sensor 534a. For example, the acoustic sensor 534b can be mounted in a bracket that is mechanically secured to the substrate holder 522. Acoustic sensors 534a and/or 534b may be located on other opposing substrates 501 and polishing pads 516 Suitable location. In some embodiments, acoustic sensors 534a and/or 534b can be directly built or integrated into platform 516, substrate holder 522, and/or any other suitable component of CMP system 500 (see, for example, Figures 6A and 6B below). The platform 616).

Acoustic sensors 534a and/or 534b can be configured to wirelessly, respectively Or wired signal connections 536a and/or 536b are electrically coupled to acoustic processor 538 and/or system controller 540, which is configured to detect TSV breaks in accordance with acoustic emissions from the CMP process.

The acoustic processor 538 can be one of the system controllers 540 as shown Partially separate separate components that are electrically coupled to system controller 540. System controller 540 can include a processor 542 to control the operation of CMP system 500, including one or more CMP processes for TSV exposure processes. In some embodiments, system controller 540 is not coupled and/or includes acoustic processor 538, but has a processor 542 to additionally perform the functions of acoustic processor 538.

Acoustic processor 538 can be configured to receive representative acoustic sensor 534a And/or 534b sends one or more signals of the sound. The acoustic processor 538 can be configured to analyze one or more signals received from the acoustic sensors 534a and/or 534b to detect TSV breaks. One or more signals received from acoustic sensors 534a and/or 534b may have amplitudes that vary over time (eg, representative of acoustic intensity). The acoustic processor 538 can be configured to receive the time varying signal, and the acoustic processor 538 can compare the signal amplitude to one or more thresholds and/or threshold bands. A signal amplitude that exceeds the threshold or falls outside the threshold band indicates a TSV break. In some embodiments, processing the received signal involves comparing certain orientations or areas of the received signal waveform with a preset threshold. Acoustic processor 538 can include suitable signal filtering, amplification, and conversion (eg, Such as A/D conversion and processing components, and acoustic processor 538 can include suitable memory configured to store data and one or more analyses. The data and analysis can be stored in any suitable storage medium (e.g., RAM, ROM, or other memory) such as acoustic processor 538 and/or system controller 540. One or more stored analyses and data can be used to detect and control one or more CMP processes relative to detecting TSV breaks.

In some embodiments, frequency based analysis can be used to process acoustic data. Acquiring acoustic signals of acoustic sensors 534a and/or 534b at high sampling rates may allow for steady state signal analysis (eg, Fast Fourier Transform (FFT)) or non-stationary signal analysis (eg, Wavelet Packet Transform (WPT)). The WPT can decompose the received acoustic signal into two parts: a low frequency component that produces an approximation of the signal body and a high frequency component that produces signal detail. The decomposition can be iterated with the approximation of subsequent successive decompositions.

In other embodiments, time base analysis can be used to process acoustic data. For example, if the TSV rupture event has a large enough signal spike in the signal-to-noise ratio, the sample root mean square (rms) of the acoustic signals received from the acoustic sensors 534a and/or 534b can be monitored.

In order to correlate the received acoustic signal with the TSV rupture event, In some embodiments, the following setting procedure can be employed. The first set substrate without the protruding TSV stump is subjected to CMP processing to generate baseline acoustic signal data for normalization. A second set substrate having a highly protruding TSV stump (e.g., a stump length of 15 μm and a diameter of 5 μm) is subjected to CMP treatment. The TSV fracture of the second set substrate is examined after the treatment using, for example, an optical inspection or a scanning electron microscope. Comparing the amplitudes of the recorded signals from the first and second setting substrates. At steady state CMP During the process, any visible signal spike above the baseline signal in the acoustic activity can be classified as a break signal, which in turn correlates the break signal with the TSV break event.

The acoustic processor 538 can initiate one or more remedial actions to automatically The response detects a TSV break. The remedial action may include, for example, causing an audible alarm or displaying a warning or other type of message on the display device, the display device being coupled to the system controller 540 to notify the operator. The remedial action may or may include automatically stopping the CMP process in response to detecting a TSV break. The remedial action may or may include automatically modifying one or more parameters of the CMP process in response to detecting a TSV break. For example, the acoustic processor 538 can be configured to automatically reduce the application of the substrate holder 522 against the polishing pad in response to detecting a TSV break in accordance with one or more stylized routines performed by the acoustic processor 538 or the system controller 540. The downforce of 516 (or vice versa) and/or automatically reduces the rotational speed of substrate holder 522, platform 518, or both. This may allow the CMP system 500 to continue processing the subsequent substrate automatically with the modified processing parameters.

6A and 6B illustrate grinding according to one or more embodiments The assembly 600 of the pad 616 and the platform 618 can be used with a CMP device, such as the CMP system 500. The platform 618 can include a disk-shaped substrate 644 configured to receive the polishing pad 616 on the surface 617 of the disk-shaped substrate 644. The disc shaped base 644 can have one or more through holes 633a, 633b, 633c. That is, in some embodiments, the disk-shaped substrate 644 has only one through-hole 633a, 633b, 633c, or only two through-holes 633a, 633b, 633c, or has three or more through-holes 633a, 633b, 633c.

Platform 618 can also include one or more acoustic sensors 634a, 634b And/or 634c, the acoustic sensor is placed in each of the through holes 633a, 633b, 633c in. In some embodiments, the acoustic sensors 634a, 634b, and/or 634c are frictionally adapted for each of the through holes 633a, 633b, 633c. In other embodiments, the acoustic sensors 634a, 634b, and/or 634c can be physically coupled to or integrally formed with the disc shaped base 644 in any suitable manner. In some embodiments, the platform 618 has through holes 633a, 633b, 633c and no acoustic sensors are placed within the through holes.

In some embodiments, the acoustic sensors 634a, 634b, and/or 634c protrude from the surface 617 of the disc shaped substrate 644 by a distance D1. Alternatively distance D1 signal to reduce the acoustic attenuation, the attenuation of the acoustic signal, such as may occur in some of the embodiments of the polishing pad of polyurethane flexible portion 616 of SUBA ^TM. In some embodiments, the distance D1 is about 50 mils (about 1.27 millimeters (mm)). This ensures that one or more of the acoustic sensors 634a, 634b and/or 634c abut against the abrasive surface 621 of the polishing pad 616 during grinding without being damaged.

In some embodiments, acoustic sensor 634a is located on platform 618 Near the center. This central positioning ensures that the distance of the acoustic sensor 634a to the substrate to be processed remains the same. The acoustic sensor 634b can be located about a distance D2 radially outward from the center of the platform 618, and the acoustic sensor 634c can be located about a distance D3 radially outward from the center of the platform 618. In one or more embodiments, the distance D2 is about 5 径向 (about 12.7 cm (cm)) radially outward from the center of the platform 618, and the distance D3 is about 10 径向 radially outward from the center of the platform 618. 25.4cm). In some embodiments, a distance D3 of about 10 吋 (about 25.4 cm) ensures that the acoustic sensor 634c is placed closest to the substrate each time the rotation passes. In some embodiments, the received acoustic material may be filtered out as the substrate moves away from the acoustic sensor 634c during the CMP process. Distance D2 and / or D3 or may have other Suitable for size.

Acoustic sensors 634a, 634b, and/or 634c are each configurable to be The wired or wireless connection is electrically coupled to the controller or acoustic processor. In some embodiments, acoustic sensors 634a, 634b, and/or 634c include electrical connectors 646a, 646b, and/or 646c that are accessible from below platform 618 (ie, opposing surface 617).

Referring to Figure 6B, the polishing pad 616 is mounted on a disc-shaped base 644 having a bottom surface 619 having one or more non-straight through holes 635a, 635b, 635c. The non-through holes 635a, 635b, 635c can have a depth that is about a distance D1, and the non-through holes 635a, 635b, 635c can be configured to receive the protrusions of one or more of the acoustic sensors 634a, 634b, and/or 634c These are not in the through hole. The number and location of the non-through holes 635a, 635b, 635c may correspond to the number and position of the through holes 633a, 633b, 633c of the platform 618, respectively. The polishing pad 616 may be identical with or similar as SUBA ^TM IV subpad the polishing pad IC1000 ^TM, the subpad having a through-hole or more non 635a, 635b and / or 635c formed within the sub-pad.

In some embodiments, any or more acoustic sensors 534a, 534b, 634a, 634b, and/or 634c can be piezoelectric crystals, transducers, and/or accelerometer sensors, and each can have a high signal to noise ratio. In some embodiments, acoustic sensors 534a, 534b, 634a, 634b, and/or 634c include a flat frequency response of an interval of about 100-500 kilohertz (kHz). In some embodiments, any one or more of the acoustic sensors 534a, 534b, 634a, 634b, and/or 634c may amplify the acoustic signal with a gain of approximately 40-60 dB. In some embodiments, acoustic sensors 534a, 534b, 634a, 634b, and/or 634c include high pass filters having a range of approximately 50-100 Hertz (Hz). Any suitable acoustic sensor can do It is a sensor 534a, 534b, 634a, 634b and/or 634c.

Figure 7 illustrates monitoring and controlling TSVs in accordance with one or more embodiments A method 700 of revealing a process. In process block 702, method 700 includes processing a substrate using a CMP process. The CMP process can be part of the TSV exposure process. For example, referring to FIGS. 1A through 1C and 5, the substrate 100 having the back surface 102A can be placed in the CMP system 500. The substrate 100 can be mounted or attached to the substrate holder 522, and the substrate 100 can be pressed against the polishing pad 516 for CMP processing, as shown and described in connection with the back side 102B, 102C or perhaps also the back side 302.

In process block 704, the sound of the CMP process is sensed. Reference 5, 6A and 6B, the sound is sensed using any one or more of the acoustic sensors 534a, 534b, 634a, 634b and/or 634c. The sound can be generated from a CMP process in which a substrate is processed using a polishing pad, such as polishing pad 516 of FIG. 5 or polishing pad 616 of FIG. 6A and FIG. 6B, such as a substrate having a back surface 102A in FIG. 100 or the substrate 501 of FIG. The acoustic sensors 534a, 534b, 634a, 634b, and/or 634c can sense sound generated by the processing substrate 100 or 501, and the acoustic sensors can transmit electronic signals representing the sound signals to the control And/or an acoustic processor, such as system controller 540 and/or acoustic processor 538.

In process block 706, method 700 includes analyzing the sound to detect The TSV fracture was measured. Analyzing the sound shots can include comparing one or more parameters (eg, amplitude) of the one or more received signals to one or more thresholds and/or threshold ranges. One or more received signals may represent acoustic emissions from a CMP process, and one or more thresholds and/or threshold ranges may indicate whether a TSV break occurred during the CMP process. Available at During one or more baseline CMP processes for the first and second set substrates, one or more thresholds and/or threshold ranges are predetermined, the first and second set substrates having or without TSV breaks, respectively.

In decision block 708, if a TSV break is detected, method 700 Process block 710 will be performed. For example, in some embodiments, the high spike receiving method of the acoustic signal may trigger method 700 to perform a processing block 710 according to a predetermined algorithm, which may be part of a program executed on acoustic processor 538, or system controller 540. Part of the end software that is executed on it. If no TSV break is detected, method 700 will proceed to decision block 712.

In process block 710, method 700 includes automatically responding to TSV breaks Crack detection. In some embodiments, this includes automatically notifying the operator that the operator can redo the currently processed substrate. In some embodiments, method 700 may alternatively or alternatively modify the CMP process, such as reducing downforce, decreasing speed, or both, in response to TSV break detection. Method 700 may alternatively or alternatively automatically stop the CMP process in response to TSV break detection. This can be done directly to termination block 714 (the path shown by the dashed line) or, in some embodiments, to decision block 712, where a "yes" response can be automatically triggered to effectively stop the CMP process. Otherwise method 700 can proceed to decision block 712.

In decision block 712, method 700 includes determining if a detection is detected The end of the CMP. Endpoint detection can be performed using a system controller of a CMP system, such as system controller 540 of CMP system 500. In some embodiments, the endpoint detection of the TSV exposure process includes detecting a time point at which the TSV is planarized to be flush with the surface of the dielectric oxide, as shown in FIGS. 1C and 2 . This endpoint detection can be utilized such as acoustic analysis and/or motor drive (eg, rotation) Motor torque feedback measurement of the polishing pad). Both acoustic analysis and motor torque feedback can be based on changes in the frictional force of the material to be treated. For example, when the CMP process changes from a metal material that primarily removes/grinds the surface of the substrate to an oxide material that primarily removes/grinds the surface of the substrate, a change in frictional force between the surface of the substrate and the polishing pad, one or more received acoustic signals And/or received motor torque feedback can indicate this change. Additionally or alternatively, endpoint detection of the TSV exposure process can be determined from a white light spectrum to indicate a particular oxide thickness. If an endpoint is detected in decision block 712, method 700 can proceed to termination block 714. Otherwise method 700 may return to process block 704.

In termination block 714, method 700 is terminated and a CMP process is utilized. Process the substrate.

The process and decision blocks of the method 700 above may be The order or sequence of the sequences or sequences is performed or performed. For example, in some embodiments, process block 704 can be performed concurrently with process blocks 706 and/or 710 and/or with decision blocks 708 and/or 712.

Those skilled in the art should readily understand that the invention can be widely practiced. Sex and application. Many embodiments and adaptability and many variations, modifications, and equivalent arrangements can be made without departing from the spirit and scope of the invention. Therefore, the present invention has been described in detail with reference to the preferred embodiments thereof, The disclosure is not intended to limit the invention to the particular device, device, component, system, or method, and the invention is intended to cover all modifications, equivalents and alternatives falling within the scope of the invention.

500‧‧‧CMP system

501‧‧‧Substrate

516‧‧‧ polishing pad

518‧‧‧ platform

520‧‧‧ shaft

522‧‧‧Retaining parts

524‧‧‧Slurry

526‧‧‧Distributor

528‧‧‧Slurry supply

530‧‧‧ pump

532‧‧‧ valve

534a, 534b‧‧‧ sensor

536a, 536b‧‧‧ signal wiring

538‧‧‧Acoustic processor

540‧‧‧System Controller

542‧‧‧ processor

Claims (20)

A platform for a chemical mechanical polishing (CMP) apparatus, comprising: a disk-shaped substrate configured to receive a polishing pad on a surface of the disk-shaped substrate, the disk-shaped substrate having at least a through hole And an acoustic sensor placed in the at least all-through hole and protruding from the surface of the disc-shaped substrate, the acoustic sensor being configured to electrically couple a controller. The platform of claim 1, further comprising a polishing pad mounted on the disk-shaped substrate, the polishing pad having a non-through hole on a base side surface of the polishing pad, the non-through hole being configured The acoustic sensor is housed in the non-straight through hole. The platform of claim 1, wherein the at least one through hole is disposed near a center, or about 5 吋 (about 12.7 cm) radially outward from the center, or radially from the center of the disc substrate. It is about 10 inches (about 25.4 cm) outward. The platform of claim 1 wherein the acoustic sensor protrudes from the surface of the disc shaped substrate by about 50 mils (about 1.27 mm). A chemical mechanical polishing (CMP) apparatus configured to perform a CMP process, the CMP apparatus comprising: a platform comprising a polishing pad; a substrate holding member configured to support a to be ground base a plate, wherein the platform or the substrate holder is configured to contact the substrate with the polishing pad; an acoustic sensor, the acoustic sensor is disposed adjacent to the polishing pad or the substrate during the CMP process; and an acoustic The processor is electrically coupled to the acoustic sensor and configured to analyze one or more signals received by the acoustic sensor to detect a TSV (straight through bore) break. The CMP apparatus of claim 5, wherein the acoustic processor is also configured to automatically stop the CMP process in response to detecting a TSV break. The CMP apparatus of claim 5, wherein the acoustic processor is also configured to automatically notify an operator in response to detecting a TSV break. The CMP apparatus of claim 5, wherein the acoustic processor is also configured to automatically modify the CMP process in response to detecting a TSV break. The CMP apparatus of claim 8, wherein the acoustic processor is configured to automatically modify the CMP process by reducing a drop in pressure, decreasing a speed, or both in response to detecting a TSV break. The CMP apparatus of claim 5, wherein the acoustic sensor comprises a flat frequency response of an interval of about 100-500 kHz. The CMP apparatus of claim 5, wherein the acoustic sensor amplifies an acoustic signal with a gain of about 40-60 dB. The CMP apparatus of claim 5, wherein the acoustic sensor comprises a high pass filter having a range of about 50-100 Hz. The CMP apparatus of claim 5, wherein the acoustic sensor is integrated into the platform such that the acoustic sensor extends from a surface of the platform into the polishing pad. The CMP apparatus of claim 13 wherein the acoustic sensor protrudes from the surface of the platform by about 50 mils (about 1.27 mm). The CMP apparatus of claim 5, wherein the acoustic sensor is integrated near a center of the platform, or about 5 吋 (about 12.7 cm) radially outward from the center, or from the center of the platform Radial outward about 10 吋 (about 25.4 cm). A method for monitoring and controlling a through-hole via (TSV) exposure process, the method comprising the steps of: processing a substrate using a chemical mechanical polishing (CMP) process; sensing an acoustic emission of the CMP process; and analyzing the sound Shoot to detect TSV breaks. The method of claim 16, further comprising the step of automatically stopping the CMP process in response to detecting a TSV break. The method of claim 16, further comprising the step of automatically notifying an operator in response to detecting a TSV break. The method of claim 16, further comprising the step of automatically modifying the CMP process in response to detecting a TSV break. The method of claim 19, wherein the step of automatically modifying comprises automatically modifying the CMP process by reducing a drop in pressure, decreasing a speed, or both in response to detecting a TSV break.