TW201503410A - Light-emitting device - Google Patents

Abstract

A light-emitting device, comprises: a semiconductor contact layer comprising a rough top surface comprising any two adjacent first crests and a first trough, wherein the crests each comprises a first highest point respectively and the first trough comprises a first lowest point between the two first adjacent crests, and two first oblique lines are formed by connecting the first highest points and the first lowest point, and a first angle is formed between the two first oblique lines; and a transparent current spreading layer comprising a top surface on the semiconductor contact layer and comprising any two second adjacent crests and a second trough, wherein the two second adjacent crests each comprises a second highest point respectively and the second trough comprises a second lowest point between the two second adjacent crests, and two second oblique lines are formed by connecting the second highest points and the second lowest point, and a second angle is formed between the two second oblique lines; wherein the rough top surface of the semiconductor contact layer is substantially directly under the top surface of the transparent current spreading layer and a difference between the first angle and the second angle is not greater than 10 degrees.

Description

Light-emitting element

The present invention discloses a light-emitting element, and more particularly to a light-emitting diode element having high light extraction efficiency.

Light-emitting diodes are widely used, for example, in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. One of the important topics of the current technicians is to increase the brightness of the light-emitting diode.

The light-emitting diode of the prior art has a semiconductor layer which has a roughened surface and can improve light extraction efficiency. However, roughening the surface reduces the conduction and diffusion of lateral currents, thus increasing the starting voltage.

The present invention provides a light emitting device comprising: a semiconductor contact layer comprising a rough top surface, the rough top surface comprising two adjacent first peaks and a first trough, each first peak comprising a first highest point, A wave valley includes a first lowest point between two adjacent first peaks, two first highest points are connected to the first lowest point to form two first oblique lines, and a first angle is located at two first oblique lines And a transparent current diffusion layer comprising a top surface over the semiconductor contact layer, and the top surface of the transparent current diffusion layer includes two adjacent second peaks and a second valley, each second peak comprising a second highest point, the second trough comprising a second lowest point between two adjacent second peaks, the two second highest points of the top surface being joined to the second lowest point to form two second oblique lines, A second angle is between the two second oblique lines; wherein the rough top surface of the semiconductor contact layer is substantially directly below the top surface of the transparent current diffusion layer, and the first angle is different from the second angle by no more than 10 degrees.

The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments and the accompanying drawings.

10, 300, 40‧‧‧ conductive substrate

101, 201‧‧‧ first surface

102‧‧‧ second surface

20, 1210, 50‧‧‧ substrates

12, 22, 32, 42‧‧‧Lighting laminates

124, 224, 324, 424, 524, 1220‧‧‧ first conductive semiconductor layer

122, 222, 322, 422, 522, 1230‧‧ ‧ active layer

120, 220, 1240, 320, 420, 520‧‧‧ second conductive semiconductor layer

13‧‧‧First flat layer

1201, 2201, 2241‧‧‧ upper surface

131, 231, 331, 431, 534‧‧‧ second flat layer

291‧‧‧fourth flat layer

14, 24‧‧‧ first transparent conductive oxide layer

First part of 141, 241, 281, 341, 441, 541‧‧

142, 242, 282, 342, 442, 542‧‧‧ second part

1421, 2421, 2821, 3421, 4421, 5421‧‧‧ first porous pocket group

1422, 2422, 2822, 3422, 4422, 5422‧‧‧ second porous pocket group

28, 48, 58‧‧‧ second transparent conductive oxide layer

15, 25, 35, 45, 55‧‧‧ first electrode

16, 26, 36, 46, 56‧‧‧ second electrode

17, 27‧‧‧ first metal reflective layer

30‧‧‧Second metal reflective layer

38‧‧‧ Prague reflection layer

41, 51‧‧‧ metal bonding layer

49, 59‧‧‧reflective layer

151, ‧‧‧ first branch

1411, 2411‧‧‧ second branch

1412, 2412‧‧‧ third branch

1200‧‧‧Lighting elements

1250‧‧‧Lighting structure

1260‧‧‧Semiconductor contact layer

1270‧‧‧Transparent current diffusion layer

1310‧‧‧Rough top

A ₁ , A ₂ ‧ ‧ first highest point

B ₁ ‧‧‧first lowest point

1320‧‧‧ top surface

A ₃ , A ₄ ‧ ‧ second highest point

B ₂ ‧‧‧ second lowest point

L ₂ , L ₄ ‧‧‧ first slash

θ ₁ ‧‧‧first angle

L ₁ , L ₃ ‧‧‧ second diagonal

θ ₂ ‧‧‧second angle

H ₁ ‧‧‧First height difference

H ₂ ‧‧‧second height difference

H ₃ ‧‧‧third height difference

C ₁ ‧‧‧First leveling area

C ₂ ‧‧‧Second leveling area

800‧‧‧Optoelectronic devices

900‧‧‧Photoelectric module

902‧‧‧ times carrier

904, 906, 908, 910, 1122‧‧ lens

912‧‧‧Power supply terminal

903‧‧‧Top subunit

901‧‧‧ bottom subunit

915‧‧‧Perforation

921‧‧‧Encapsulation materials

919‧‧‧reflective layer

917‧‧‧metal layer

1000‧‧‧Lighting device

1040‧‧‧shade

1100‧‧‧ bulb

1121‧‧‧ lamp housing

1124‧‧‧Lighting module

1125‧‧‧ lamp holder

1126‧‧‧heat sink

1127‧‧‧Links

1128‧‧‧Electrical connector

1123‧‧‧ Carrier

1A to 1F are views showing a manufacturing process of a light-emitting element according to a first embodiment of the present invention; and FIG. 1G is a top view showing a second conductive type semiconductor layer according to the first embodiment of the present invention; An electron micrograph showing an indium tin oxide layer on the surface of the light-emitting element in the first embodiment of the present invention; and a second A-2D view showing a schematic cross-sectional view of the horizontal light-emitting element in the second embodiment of the present invention; 3 is a schematic cross-sectional view showing a light-emitting element in a third embodiment of the present invention; FIG. 4 is a cross-sectional view showing a light-emitting element in a fourth embodiment of the present invention; and FIG. 5 is a view showing a light-emitting element in a fifth embodiment of the present invention. FIG. 6A-6B is a top view showing the second conductive semiconductor layer of the first embodiment of the present invention; and FIGS. 7A-7B are diagrams showing the second conductive semiconductor layer of the second embodiment of the present invention. Figure 8A is a schematic cross-sectional view showing a light-emitting element of one embodiment of the present invention; and Figure 8B is a cross-sectional enlarged view showing a portion of a light-emitting element of one embodiment of the present invention; Figure C is a cross-sectional enlarged view showing a portion of a light-emitting element of one embodiment of the present invention; Figure 9A is a schematic view showing the appearance of a light-emitting element of the present invention applied to a light-emitting diode module; and Figure 9B is a view showing the present invention. FIG. 9C is a cross-sectional enlarged view of the E region in FIG. 9B; FIG. 10A to FIG. 10B are schematic views showing a lighting device according to an embodiment of the present invention; and FIG. 11 is a schematic view The inventive light-emitting element is applied to an exploded view of a bulb.

The above described features and advantages of the invention will be apparent from the following description. In the drawings or the description, the same or similar parts are given the same reference numerals, and in the drawings, the shape or thickness of the elements may be enlarged or reduced. It is to be noted that elements not shown or described in the figures may be in a form known to those skilled in the art.

In order to make the description of the present invention more detailed and complete, please refer to the following description and cooperate with the diagrams of FIGS. 1 to 7. 1A to 1F are views showing a manufacturing process of a light-emitting element according to a first embodiment of the present invention: FIG. 1A shows a light-emitting element including a conductive substrate 10 having a first surface 101 and a second surface 102, The light emitting layer 12 is formed on the conductive substrate 10, and the light emitting layer 12 includes a first conductive semiconductor layer 124, an active layer 122 and a second conductive semiconductor layer 120, which are sequentially formed on the conductive substrate 10. Above a surface 101. The upper surface 1201 of the second conductive semiconductor layer 120 is a roughened surface and includes a first porous pocket group 1421, which may be formed by epitaxy, etching or a mixture of the two. In this embodiment, the material of the light-emitting layer 12 comprises gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), cerium (Si) or the above elements. The combination. Commonly used materials such as aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series and the like. The structure of the active layer 122 may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum multi-quantum. Well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination.

As shown in FIG. 1B, a first planarization layer 13 is formed on the upper surface 1201 of the second conductive semiconductor layer 120, covering and filling the roughened surface upper surface 1201. This first flat layer 13 can be formed by spin coating. In one embodiment, the first planar layer 13 is formed by spin-on glass coating (SOG). In one embodiment, the spin-on glass material can be a cerium oxide (SiO ₂ ) suspended in solution and a dopant mixed dielectric material, wherein the dopant can be boron or phosphorus. The spin-coated glass material may also be a polymer such as BCB (benzocyclobutene), HSQ (hydrogen silsesquioxane), and MSQ (methylsequioxane).

As shown in FIG. 1C, after the first flat layer 13 is patterned and cured, a second flat layer 131 is formed by etching and exposure lithography to expose the second conductive semiconductor. The upper surface 1201 of the portion of the layer 120, that is, the portion of the upper surface 1201 is not covered by the second planar layer 131. The position of the second flat layer 131 is not limited and may be formed in the middle or the edge of the upper surface 1201 of the second conductive type semiconductor layer 120.

As shown in FIG. 1D, a first transparent conductive oxide layer 14 is formed and covers the entire upper surface 1201 of portions of the second planarization layer 131 and the second conductive semiconductor layer 120. The first transparent conductive oxide layer 14 includes a first portion 141 and a second portion 142, wherein the first portion 141 is substantially flat and is in contact with the entire second planar layer 131, and the second portion 142 is formed on the second conductive semiconductor layer 120. Above the surface 1201 and including a second porous pocket group 1422, the first porous pocket group 1421 of the second conductive semiconductor layer 120 contacts the first transparent conductive oxide layer 14, and the second porous pocket group 1422 is formed in the first The upper surface of the two portions 142 is above and opposite the first porous pocket group 1421. The shape of the first porous pocket group 1421 may be conical or polygonal (as shown in the shape of the first G-1H). The first porous pocket group 1421 may be formed on the upper surface 1201 of a portion of the second conductive type semiconductor layer 120 by, for example, epitaxy, etching, or a mixture of both. The shape of each of the holes in the second porous pocket group 1422 can be formed into a conical or polygonal shape in an etching manner and extending toward the first porous pocket group 1421. Preferably, the extending direction is opposite to the first surface of the conductive substrate 10. 101 is roughly vertical.

As shown in FIG. 1E, a first electrode 15 is formed over the first portion 141 of the first transparent conductive oxide layer 14; a second electrode 16 is formed over the second surface 102 of the conductive substrate 10. The material of the first electrode 15 and the second electrode 16 may include chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), or A metal material such as silver (Ag) or an alloy thereof.

As shown in FIG. 1F, in another embodiment of the present invention, a first metal reflective layer 17 may be formed between the first portion 141 of the first transparent conductive oxide layer 14 and the first electrode 15 to improve luminous efficiency. .

As shown in the first embodiment of the present invention, the first transparent conductive oxide layer 14 and the first electrode can be formed by forming the second planar layer 131 over the upper surface 1201 of the portion of the second conductive semiconductor layer 120. 15 and the first metal reflective layer 17 are formed on a substantially flat surface, thereby reducing the impedance and forward voltage of the light-emitting element and increasing current lateral conduction, current dispersion capability, and light extraction efficiency.

In addition, since the first porous pocket group 1421 is from the second conductive type semiconductor layer 120 The upper surface 1201 extends downwardly such that the first transparent oxide layer 14 can be formed over the second conductive semiconductor layer 120 in accordance with the contour of the upper surface 1201 such that the second portion 142 of the first transparent oxide layer 14 is over. The surface forms a second porous pocket group 1422. Due to the first porous pocket group 1421, the bonding strength between the first metal reflective layer 17 and the first transparent oxide layer 14 can be increased. The result of the peeling test performed by the light-emitting element according to the first embodiment of the present invention and the conventional light-emitting element having no hole structure on the surface of the first transparent oxide layer shows that all the light rays formed according to the first embodiment of the present invention Components can pass the test, but 80% of the conventional light-emitting components cannot pass the test. From the above results, it can be seen that the low light extraction efficiency and the peeling problem can be improved by the design that the first transparent oxide layer simultaneously includes the substantially flat first portion and the second portion including the porous pocket group.

2A-2D is a schematic cross-sectional view showing a horizontal type light-emitting element in a second embodiment of the present invention. 2A shows a light-emitting device comprising a substrate 20, a light-emitting layer 22 comprising a first conductive semiconductor layer 224, an active layer 222 and a second conductive semiconductor layer 220 sequentially formed on the first surface of the substrate 20. Above 201. The upper surface 2201 of the second conductive semiconductor layer 220 is a roughened surface and includes a first porous pocket group 2421, which may be formed by epitaxy, etching or a mixture of the two. Next, the light emitting laminate 22 is etched, and a portion of the first conductive type semiconductor layer 224 is exposed to form a horizontal light emitting element.

In this embodiment, the material of the light-emitting layer 22 comprises gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), antimony (Si) or the above elements. The combination. Commonly used materials such as aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series and the like. The structure of the active layer 222 may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-layer quantum well structure (multi- Quantum well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination.

Next, in a process similar to the first embodiment of the present invention, a first planar layer (not shown) is formed on the upper surface 2201 of the second conductive semiconductor layer 220, and covers and fills the surface 2201 of the roughened surface. . This first flat layer can be formed by spin coating. In one embodiment, the first planar layer is formed by spin on glass coating (SOG). In one embodiment, the spin-on glass material can be a cerium oxide (SiO ₂ ) suspended in solution and a dopant mixed dielectric material, wherein the dopant can be boron or phosphorus. The spin-coated glass material may also be a polymer such as BCB (benzocyclobutene), HSQ (hydrogen silsesquioxane), and MSQ (methylsequioxane).

Next, after patterning and hardening the first planar layer (not shown), forming a second planar layer 231 by etching and exposing the lithography process to expose the upper surface 2201 of the portion of the second conductive semiconductor layer 220 That is, the portion of the upper surface 2201 is not covered by the second flat layer 231. The position of the second flat layer 231 is not limited and may be formed in the middle or the edge of the upper surface 2201 of the second conductive type semiconductor layer 220.

Next, a first transparent conductive oxide layer 24 is formed and covers the entire upper surface 2201 of the portions of the second planarization layer 231 and the second conductive semiconductor layer 220. The first transparent conductive oxide layer 24 includes a first portion 241 and a second portion 242, wherein the first portion 241 is substantially flat and is in contact with the entire second planar layer 231, and the second portion 242 is formed on the upper surface of the second conductive semiconductor layer 220. Above the 2201 and including a second porous pocket group 2422, the first porous pocket group 2421 of the second conductive semiconductor layer 220 contacts the first transparent conductive oxide layer 24, and the second porous pocket group 2422 is formed in the second The upper portion of the portion 242 is above and opposite the first porous pocket group 2421. The shape of each of the holes in the first porous pocket group 2421 may be conical or polygonal. The first porous pocket group 1421 may be formed on the upper surface 2201 of a portion of the second conductive type semiconductor layer 220 by, for example, epitaxy, etching, or a mixture of both. The shape of each of the holes in the second porous pocket group 2422 can be formed into a conical or polygonal shape in an etching manner and extending toward the first porous pocket group 2421. Preferably, the extending direction is opposite to the first surface of the conductive substrate 20. 201 is substantially vertical.

Finally, a first electrode 25 is formed over the first portion 241 of the first transparent conductive oxide layer 24; a second electrode 26 is formed over the exposed first conductive semiconductor layer 224. The material of the first electrode 25 and the second electrode 26 may include chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), or A metal material such as silver (Ag) or an alloy thereof. By the design of the first transparent oxide layer containing both the substantially flat first portion and the second portion including the porous pocket group, the problem of low light extraction efficiency can be improved.

As shown in FIG. 2B, in another embodiment of the present invention, a first metal reflective layer 27 may be formed between the first portion of the first transparent conductive oxide layer 24 and the first electrode 25 to enhance luminous efficiency.

In addition, since the first porous pocket group 2421 extends downward from the upper surface 2201 of the second conductive type semiconductor layer 220, the upper surface of the second portion 242 of the first transparent oxide layer 24 may be formed according to the contour of the upper surface 2201. Above the second conductive semiconductor layer 220, the second portion 242 The upper surface of the upper surface 2201 of the second conductive semiconductor layer 220 includes a second porous pocket group 2422. By the first porous pocket group 2421, the bonding strength between the first metal reflective layer 27 and the first transparent oxide layer 24 can be increased. The result of the peeling test performed by the light-emitting element according to the second embodiment of the present invention and the conventional light-emitting element having no hole structure on the surface of the first transparent oxide layer shows that all of the light-emitting elements according to the second embodiment of the present invention Can pass the test, but 80% of the known light-emitting components can not pass the test. From the above results, it is understood that the problem of low efficiency and peeling can be improved by the design that the first transparent oxide layer simultaneously includes the substantially flat first portion and the second portion including the porous pocket group.

Another embodiment of the present invention is shown in FIG. 2C. The difference between the embodiment of FIG. 2C and FIG. 2A is that the surface of the first conductive semiconductor layer 224 is etched into a roughened upper surface 2241 and includes a first Porous cavity group 2821. Next, in a process similar to the first embodiment of the present invention, a third planar layer (not shown) is formed on the upper surface 2241 of the first conductive type semiconductor layer 224, and covers and fills the above-mentioned roughened surface. Upper surface 2241. This third flat layer can be formed by spin coating. In one embodiment, the third flat layer is formed by spin-on glass coating (SOG), and the material may be BCB (Benzocyclobutene) or the like. Next, the third flat layer is patterned and hardened, and a fourth flat layer 291 is formed by etching and exposure lithography to expose a portion of the upper surface 1241 of the first conductive semiconductor layer 224. The position of the fourth flat layer 291 is not limited and may be formed in the middle or the edge of the upper surface 2241 of the first conductive type semiconductor layer 224.

Next, a second transparent conductive oxide layer 28 is formed and covers the entire upper surface 2241 of the fourth planarization layer 291 and a portion of the first conductive semiconductor layer 224. The second transparent conductive oxide layer 28 includes a first portion 281 and a second portion 282, wherein the first portion 281 is substantially flat and is in contact with the entire fourth planar layer 291, and the second portion 282 is formed on the upper surface of the first conductive semiconductor layer 224. Above the 2241 and comprising a second porous pocket group 2822, the first porous pocket group 2821 of the first conductive semiconductor layer 224 contacts the second transparent conductive oxide layer 28, and the second porous pocket group 2822 is formed in the second The upper portion of the portion 282 is above and opposite the first porous pocket group 2821. The shape of each of the holes in the first porous pocket group 2821 may be conical or polygonal. The first porous pocket group 2821 may be formed by, for example, epitaxy, etching, or both, on the upper surface 2241 of a portion of the first conductive type semiconductor layer 224. The shape of each of the holes in the second porous pocket group 2822 can be formed into a conical shape or a polygonal pyramid shape in an etching manner and extending toward the first porous pocket group 2821. Preferably, the extending direction It is substantially perpendicular to the first surface 201 of the substrate 20.

Finally, a first electrode 25 is formed over the first portion 241 of the first transparent conductive oxide layer 24; a second electrode 26 is formed over the first portion 281 of the second transparent conductive oxide layer 28. The material of the first electrode 25 and the second electrode 26 may include chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), or A metal material such as silver (Ag) or an alloy thereof. The problem of low light extraction efficiency can be improved by the design of the second transparent oxide layer containing both the substantially flat first portion and the second portion including the porous pocket group.

As shown in FIG. 2D, in another embodiment of the present invention, in addition to the first metal reflective layer 3027 being formed between the first portion 241 of the first transparent conductive oxide layer 24 and the first electrode 25, the light emitting element further includes A second metal reflective layer 30 is formed between the first portion 281 of the second transparent conductive oxide layer 28 and the second electrode 26 to further enhance luminous efficiency.

3 is a schematic cross-sectional view showing a light-emitting element according to a third embodiment of the present invention. The third embodiment differs from the first embodiment in that a Bragg Reflector (DBR) layer 38 is formed on the conductive substrate 30 and Between a conductive semiconductor layer 324.

4 is a cross-sectional view showing a light-emitting element according to a fourth embodiment of the present invention. The fourth embodiment differs from the first embodiment in a metal bonding layer 41, a reflective layer 49, and a second transparent conductive oxide layer 48. It is formed between the conductive substrate 40 and the first conductive type semiconductor layer 424.

5 is a schematic cross-sectional view showing a light-emitting element according to a fifth embodiment of the present invention. The fifth embodiment differs from the first embodiment in a metal bonding layer 51, a reflective layer 59, and a second transparent conductive oxide layer 58. The second electrode 56 is formed on the second transparent conductive oxide layer 58 between the substrate 50 and the first conductive semiconductor layer 524.

6A-6B are top views showing the second conductive semiconductor layer of the first embodiment of the present invention; and FIG. 6A is a top view showing the second conductive semiconductor layer 120, as described above, the second flat layer (not shown) is formed over the upper surface 1201 of a portion of the second conductive type semiconductor layer. After forming the second planarization layer, the first transparent conductive oxide layer 14 is formed over a portion of the second planar layer and includes a first portion 141 and a second portion 142, the first portion 141 being substantially flat and contacting the entire second planar layer, The second portion 142 is formed over the second conductive type semiconductor layer 120 and includes a roughened surface. The first electrode 15 is formed on the first portion 141 of the first transparent conductive oxide layer 14. In this embodiment, a portion of the first transparent conductive oxide layer 14 is The first electrode 15 is not covered by the first electrode 15, and the first electrode 15 may extend toward the edge of the light emitting element as a finger to disperse current.

Specifically, as shown in FIG. 6B, in another embodiment, the first electrode 15 includes a first branch 151 having a finger-like pattern and extending toward an edge of the light emitting element to achieve better. Current dispersion effect. The first transparent conductive oxide layer 14 may further include a second branch 1411 and a third branch 1412. The second branch 1411 has a finger-like pattern and extends toward the edge of the light emitting element, and the third branch 1412 is transparent. And as a finger, and extending from the side of the second branch 1411 toward the edge of the light-emitting element to further enhance the current dispersion efficiency. In the present embodiment, the second branch 1411 and the third branch 1412 of the portion of the first transparent conductive oxide layer 14 are not covered by the first branch 151 of the first electrode 15. Because the second branch 1411 and the third branch 1412 of the first transparent conductive oxide layer 14 are formed on the second flat layer (not shown), the second branch 1411 and the third branch 1412 comprise a substantially flat surface. , in turn, has a better current dispersion effect.

7A-7B are top views showing the second conductive type semiconductor layer of the second embodiment of the present invention; and Fig. 7A is a top view showing the second conductive type semiconductor layer. As described above, a second flat layer (not shown) may be formed over the upper surface 2201 of a portion of the second conductive type semiconductor layer. After forming the second planarization layer, the first transparent conductive oxide layer 24 is formed over a portion of the second planar layer and includes a first portion 241 and a second portion 242 that is substantially flat and contacts the entire second planar layer, The second portion 242 is formed over the second conductive type semiconductor layer 220 and includes a roughened surface. Next, the first electrode 25 is formed on the first portion 241 of the first transparent conductive oxide layer 24. In the present embodiment, a portion of the first transparent conductive oxide layer 24 is not covered by the first electrode 25, and the first electrode 25 may extend toward the edge of the light emitting element as a finger to disperse current.

As shown in FIG. 7B, in another embodiment, the first electrode 25 includes a first branch 251 extending toward the edge of the light-emitting element for better current dispersion. The first transparent conductive oxide layer 24 may further include a second branch 2411 and a third branch 2412. The second branch 2411 has a finger-like pattern and extends toward the edge of the light-emitting element, and the third branch 2412 is transparent. And as a finger, and extending from the side of the second branch 2411 toward the edge of the light-emitting element to further enhance the current dispersion efficiency. In the present embodiment, the second branch 2411 and the third branch 2412 of the portion of the first transparent conductive oxide layer 24 are not the first branch of the first electrode 25. 251 coverage. Since the second branch 2411 and the third branch 2412 of the first transparent conductive oxide layer 24 are formed on the second flat layer (not shown), the second branch 2411 and the third branch 2412 comprise a substantially flat surface. , in turn, has a better current dispersion effect.

8A to 8C are schematic cross-sectional views showing a light-emitting element 1200 according to an embodiment of the present invention. 8A shows a light-emitting element 1200 comprising a substrate 1210; a light-emitting structure 1250 formed on the substrate 1210; a semiconductor contact layer 1260 over the light-emitting structure 1250, comprising a rough top surface; and a transparent current diffusion layer 1270 It includes a top surface over the semiconductor contact layer 1260. The light emitting structure 1250 includes a first conductive semiconductor layer 1220, an active layer 1230, and a second conductive semiconductor layer 1240. The rough top surface of the semiconductor contact layer 1260 is located substantially directly below the top surface of the transparent current spreading layer 1270. The substrate 1210 is a growth substrate or a carrier substrate. The material of the semiconductor contact layer 1260 includes gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), cerium (Si), or a combination of the above. The material of the transparent current diffusion layer 1270 contains a metal oxide or a metal nitride.

Fig. 8B is a schematic enlarged cross-sectional view showing the semiconductor contact layer 1260 and the transparent current diffusion layer 1270 in a partial region of the light-emitting element of one embodiment of the present invention. The rough top surface 1310 of the semiconductor contact layer 1260 includes two adjacent first peaks and a first trough, each of the first peaks respectively includes a first highest point A ₁ , A ₂ , and the first trough includes one adjacent to the two The first lowest point B ₁ between the first peaks. The top surface 1320 of the transparent current diffusion layer 1270 includes two adjacent second peaks and a second valley, each of the second peaks respectively includes a second highest point A ₃ , A ₄ , and the second valley includes one adjacent to the two The second lowest point B ₂ between the second peaks. The two first highest points A ₁ , A ₂ of the rough top surface 1310 of the semiconductor contact layer 1260 are connected to the first lowest point B ₁ to form two first oblique lines L ₂ , L ₄ , and a first angle θ ₁ is located at two The first oblique line is between L ₂ and L ₄ . The two second highest points A ₃ , A ₄ of the top surface 1320 of the transparent current diffusion layer 1270 are connected to the second lowest point B ₂ to form two second oblique lines L ₁ , L ₃ , and a second angle θ ₂ is located at two Between the second oblique lines L ₁ and L ₃ . The difference between the first angle θ ₁ and the second angle θ ₂ is not more than 10 degrees. In another embodiment, the first angle θ ₁ is substantially equal to the second angle θ ₂ . A first height difference H ₁ between a second lowest point B ₂ of the second trough of the top surface 1320 of the transparent current spreading layer 1270 and a first lowest point B ₁ of the first trough of the rough top surface 1310 of the semiconductor contact layer 1260 Greater than 0. a second highest point A _{3 of} one of the second peaks of the top surface 1320 of the transparent current diffusion layer 1270 and a second highest point A _{1 of} one of the first peaks of the rough top surface 1310 of the semiconductor contact layer 1260 The height difference H _{2 is} greater than zero. a third between the second highest point A _{4 of} one of the second peaks of the top surface 1320 of the transparent current diffusion layer 1270 and the first highest point A _{2 of} one of the first peaks of the rough top surface 1310 of the semiconductor contact layer 1260 The height difference H _{3 is} greater than zero. The second height difference H _{2 is} equal or different from the third height difference H ₃ . The ratio of the first height difference H ₁ to the second height difference H ₂ is between 0.1 and 10. The ratio of the first height difference H ₁ to the third height difference H ₃ is between 0.1 and 10. In another embodiment, the top of the semiconductor contact layer 1260 is formed with conical or polygonal conical holes, and the holes extend downward from the top of the semiconductor contact layer 1260 to form a rough top surface 1310.

Fig. 8C is a schematic enlarged cross-sectional view showing the semiconductor contact layer 1260 and the transparent current diffusion layer 1270 in a partial region of the light-emitting element of the light-emitting element of one embodiment of the present invention. The first trough of the rough top surface 1310 of the semiconductor contact layer 1260 includes a first flat region C ₁ , and the first lowest point (not labeled) is located in the first flat region C ₁ ; the top surface of the transparent current diffusion layer 1270 The second trough of 1320 includes a second flat region C ₂ and the second lowest point (not labeled) is located at the second flat region C ₂ . The first height difference H ₁ between the first flat region C ₁ and the second flat region C ₂ is greater than zero.

9A to 9C are schematic views showing the application of the light-emitting element of the present invention to a light-emitting diode module. Fig. 9A shows a photovoltaic element module 900 comprising a primary carrier 902, a photovoltaic device (not shown), a plurality of lenses 904, 906, 908, 910, and two power supply terminals 912 (another one not shown). The optoelectronic component module 900 can be coupled to a lampshade to form a lighting device connection, as will be described in detail later.

Fig. 9B is a schematic cross-sectional view showing a photovoltaic element module 900 of the present invention, and Fig. 9C is an enlarged cross-sectional view showing an E region in Fig. 9B. As shown in FIG. 9B, the secondary carrier 902 includes a top subunit 903 and a bottom subunit 901, wherein the bottom subunit 901 has at least one surface system in contact with the top subunit 903. Lenses 904, 908 are formed over top sub-unit 903. As shown in FIG. 9C, at least one through hole 915 penetrates the top subunit 903, and at least one optoelectronic device 800 is located within the through hole 915 and is in contact with the bottom subunit 901. In addition, the optoelectronic device 800 is packaged using a package material 921, and the lens 908 is disposed over the encapsulation material 921, which includes a silicone resin or an epoxy resin. In one embodiment, a reflective layer 919 is formed on the sidewall of the top sub-unit 903 surrounding the via 915 to increase luminous efficiency. A metal layer 917 can be applied to the lower surface of the bottom sub-unit 901 to improve the heat dissipation effect.

10A to 10B are schematic views showing a lighting device of one embodiment of the present invention. The illuminating device 1000 comprises a photoelectric component module 900, a lampshade 1040, a power supply circuit (not shown) for supplying current of the photovoltaic device module 900, and a control unit (not shown) for controlling the power supply circuit. The lighting device 1000 can be a street lamp, a headlight, an indoor lighting source, a traffic sign, or a backlight module of the display.

Figure 11 is an exploded view of the light-emitting element of the present invention, a bulb 1100 having a lamp housing 1121; a lens 1122 disposed in the lamp housing 1121; a lighting module 1124 located below the lens 62; a lamp holder 1125, having a heat sink 1126 for carrying the lighting module 1124; a connecting portion 1127; and an electrical connector 1128, wherein the connecting portion 1127 is coupled to the socket 1125 and the electrical connector 1128. The illumination module 1124 has a carrier 1123; and a plurality of optoelectronic devices 800 on the carrier 1123 of any of the foregoing embodiments.

Specifically, the photovoltaic device comprises the light-emitting element, the photodiode, the photo resister, the laser diode, the infrared emitter, the organic light-emitting diode, and the solar cell of any of the foregoing embodiments. The conductive substrates 10, 300, 40 and/or the substrates 20, 1210, 50, 80 may be growth or carrier substrates, and the substrates 20, 1210, 50, 80 comprise a conductive substrate, an insulating substrate, a transparent substrate or a light transmissive substrate. The material of the conductive substrate may comprise a metal, an oxide, a nitride, a phosphide or a germanide, wherein the metal may, for example, comprise germanium (Ge) or gallium arsenide (GaAs), and the oxide may, for example, comprise lithium aluminate (LiAlO ₂ ) or Zinc oxide (ZnO), the nitride may, for example, comprise gallium nitride (GaN) or aluminum nitride (AlN), and the phosphide may, for example, comprise indium phosphide (InP), which may, for example, comprise niobium or tantalum carbide (SiC). The material of the transparent substrate may include aluminum oxide (Al ₂ O ₃ ), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO) gallium nitride (GaN), aluminum nitride (AlN), glass, diamond, synthetic diamond (CVD). Diamond), diamond-like carbon (DLC), spinel (MgAl ₂ O ₃ ), yttrium oxide (SiO _x ) or lithium gallate (LiGaO ₂ ).

The first conductive type semiconductor layers 124, 224, 324, 424, 524, and 1220 and the second conductive type semiconductor layers 120, 220, 1240, 320, 420, and 520 have different electrical properties, polarities, or dopants, or include To provide a semiconductor material for electrons or holes, the semiconductor material can be a single layer or multiple layers. The electrical selection can be a combination of at least any of p-type, n-type, and i-type. The active layers 122, 222, 322, 422, 522, and 1230 are respectively located on the first conductive type semiconductor layers 124, 224, 324, 424, 524, and 1220 and the second conductive type semiconductor layers 120, 220, 1240, 320, and 420. Between 520, the active layer is an area where electrical energy and light energy may be converted or induced to be converted. The means by which electrical energy may be converted or induced to be converted into light energy may be a light emitting diode, a liquid crystal display or an organic light emitting diode. The means by which light energy may be converted or induced to be converted into electrical energy may be a solar cell or a photodiode. First conductive semiconductor layers 124, 224, 324, 424, 524, 1220, active layers 122, 222, 322, 422, 522, 1230, second conductive semiconductor layers 120, 220, 1240, 320, 420, 520 The material comprises gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N), cerium (Si) or a combination of the above.

In one embodiment, the optoelectronic device includes a light-emitting element whose illumination spectrum can be adjusted by changing the physical or chemical elements of the single-layer semiconductor material layer or the multi-layer semiconductor material layer. A commonly used single layer semiconductor material layer or a multilayer semiconductor material layer comprising aluminum (Al), gallium (Ga), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), oxygen (O) or A combination of the above elements. The structure of the active layer (not shown) is, for example, a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multilayer quantum well structure. (multi-quantum well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination.

In an embodiment, a buffer layer may be selectively disposed between the first conductive semiconductor layers 124, 224, 324, 424, 524, and 1220 and the substrates 20, 1210, and 50 and the conductive substrates 10, 300, and 40. Not shown). The buffer layer is interposed between the two material systems to "transition" the material systems of the substrates 20, 1210, 50, and the conductive substrates 10, 300, 40 to the first conductive semiconductor layers 124, 224, 324, 424, 524. , 1220 material system. For the structure of the light-emitting diode, the buffer layer is used to reduce the material layer of the lattice mismatch between the two materials. In another aspect, the buffer layer may also be a single layer, a plurality of layers or a structure comprising two materials or two separate structures, and the materials selectable include organic materials, inorganic materials, metals, or semiconductors; The structure includes: a reflective layer, a thermally conductive layer, a conductive layer, an ohmic contact layer, an anti-deformation layer, a stress release layer, a bonding layer, a wavelength conversion layer, and a mechanical fixing structure. In an embodiment, the material of the buffer layer may include aluminum nitride (AlN) or gallium nitride (GaN), and the forming method may include sputtering or atomic layer deposition (ALD).

In the foregoing embodiments, the materials of the first transparent conductive oxide layers 14, 24 and the second transparent conductive oxide layer 28, 48, 58 comprise indium tin oxide (ITO), cadmium tin oxide ( Cadmium tin oxide, CTO), antimony tin oxide, zinc indium oxide, aluminum zinc oxide, zinc A zinc antimony oxide, or a combination thereof, and the formation method may include electron beam evaporation, ion sputtering, thermal evaporation, or the like. Taking the first transparent conductive oxide layers 14, 24 and the second transparent conductive oxide layers 28, 48, 58 comprising indium tin oxide as an example, the thickness of the first transparent conductive oxide layers 14, 24 and the second transparent conductive oxidation The thickness of the layer 28, 48, 58 is between 1 micrometer and 150, and the light transmittance is greater than 50% in the range of wavelengths between 300 micrometers and 700 micrometers.

In the foregoing embodiments, the material of the metal bonding layers 41, 51 comprises indium, tin, gold-tin (AuSn) or an alloy thereof.

The Bragg reflector layer 38 comprises a semiconductor stack. The reflective layers 49 and 59 comprise indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, palladium, iridium, copper, ruthenium, ruthenium, nickel, lead-tin alloy, gold-zinc alloy or the like. alloy. The material of the first and second metal reflective layers 17, 27, 30 comprises aluminum or silver.

The above figures and descriptions are only corresponding to specific embodiments, however, the elements, embodiments, design criteria, and technical principles described or disclosed in the various embodiments are inconsistent, contradictory, or difficult to implement together. In addition, we may use any reference, exchange, collocation, coordination, or merger as required.

Although the invention has been described above, it is not intended to limit the scope of the invention, the order of implementation, or the materials and process methods used. Various modifications and variations of the present invention are possible without departing from the spirit and scope of the invention.

1200‧‧‧Lighting elements

1250‧‧‧Lighting structure

1260‧‧‧Semiconductor contact layer

1270‧‧‧Transparent current diffusion layer

1210‧‧‧Substrate

1220‧‧‧First Conductive Semiconductor Layer

1230‧‧‧Active layer

1240‧‧‧Second conductive semiconductor layer

Claims (10)

A light emitting device comprising: a semiconductor contact layer comprising a rough top surface, the rough top surface comprising two adjacent first peaks and a first trough, each first peak comprising a first highest point, the first a wave valley includes a first lowest point between the two adjacent first peaks, the two first highest points are connected to the first lowest point to form two first oblique lines, and a first angle is located at the two a first oblique line between the strips; and a transparent current diffusion layer comprising a top surface over the semiconductor contact layer, and the top surface of the transparent current diffusion layer includes two adjacent second peaks and a second a trough, each second peak comprising a second highest point, the second trough comprising a second lowest point between the two adjacent second peaks, the two second highest points of the top surface and the first The second lowest point is connected to form two second oblique lines, and a second angle is located between the two second oblique lines; wherein the rough top surface of the semiconductor contact layer is substantially directly below the top surface of the transparent current diffusion layer, The first angle and the second angle The difference is not greater than 10 degrees. The illuminating element of claim 1, further comprising a first height difference between the first lowest point and the second lowest point, the first height difference being greater than zero. The illuminating element of claim 2, further comprising a second height difference and a third height difference, the second height difference being between the two adjacent first peaks and the second peak and greater than 0 The third height difference is located between the other two adjacent first peaks and the second peak and is greater than zero. The light-emitting element according to claim 3, wherein the ratio of the first height difference to the second height difference is between 0.1 and 10. The light-emitting element according to claim 3, wherein the ratio of the first height difference to the third height difference is between 0.1 and 10. The illuminating element of claim 1, wherein the first trough comprises a first flat area. The illuminating element of claim 6, wherein the second trough comprises A second flat area. The light-emitting element of claim 1, wherein a plurality of holes are formed in a top portion of the semiconductor contact layer, and the holes extend downward from a top of the semiconductor contact layer to form the rough top surface. The light-emitting element of claim 1, wherein the first angle is substantially equal to the second angle. The light-emitting element according to claim 1, wherein the material of the transparent current diffusion layer comprises a metal oxide or a metal nitride.