TW201440933A - Method of performing beam characterization in a laser scribing apparatus, and laser scribing apparatus capable of performing such a method - Google Patents

Method of performing beam characterization in a laser scribing apparatus, and laser scribing apparatus capable of performing such a method Download PDF

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TW201440933A
TW201440933A TW103104614A TW103104614A TW201440933A TW 201440933 A TW201440933 A TW 201440933A TW 103104614 A TW103104614 A TW 103104614A TW 103104614 A TW103104614 A TW 103104614A TW 201440933 A TW201440933 A TW 201440933A
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substrate
glow
laser
laser beam
substrate holder
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TWI555599B (en
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Guido Martinus Henricus Knippels
Ivo Libertus Adrianus Johannes Pullens
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Advanced Laser Separation Internat Alsi N V
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/0869Devices involving movement of the laser head in at least one axial direction
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/0426Fixtures for other work
    • B23K37/0435Clamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A method of performing beam characterization in a laser scribing apparatus that is used to scribe a substantially planar semiconductor substrate, which apparatus comprises: A movable substrate holder on which said substrate can be clamped, whereby the substrate is clamped in a clamping zone of the holder so as to present a target surface to be scribed along at least one scribelane; A laser source that can be used to direct at least one laser beam along an optical axis toward the target surface, which method comprises the following steps: Providing an image recording device that can be used to view and control the scribing process, said device having a field of view with a viewing axis normal thereto; Providing a reference plate on the substrate holder outside the clamping zone, the reference plate comprising a material that produces stimulated radiation in response to irradiation by said laser beam; Positioning the substrate holder such that the laser beam impinges upon a point of the reference plate and excites said material to produce a localized glow at said point of impingement; Using the image recording device to detect a physical parameter of said glow. Examples of such a physical parameter include: A location of said glow relative to a reference point in said field of view; A diameter of said glow; An integrated intensity of said glow; A shape of said glow, and combinations hereof.

Description

在雷射劃刻裝置中執行光束特徵化之方法,及可執行此方法之雷射劃刻裝置 Method for performing beam characterization in a laser scribe device, and laser scribe device capable of performing the same

本發明係關於一種在用於劃刻一實質上平坦半導體基板之一雷射劃刻裝置中執行光束特徵化之方法,該裝置包含:-一可移動基板固持器,該基板可夾持於該可移動基板固持器上,藉此該基板夾持於該固持器之一夾持區中以便呈現欲沿著至少一個劃刻道劃刻之一目標表面;-一雷射源,其可用於沿著一光學軸朝向該目標表面引導至少一個雷射光束。 The present invention relates to a method of performing beam characterization in a laser scribe device for scribing a substantially planar semiconductor substrate, the device comprising: - a movable substrate holder, the substrate being closable Removing the substrate holder, whereby the substrate is clamped in a clamping region of the holder to present a target surface to be scribed along at least one scribe lane; a laser source that can be used along An optical axis directs at least one laser beam toward the target surface.

本發明亦係關於一種其中可執行此一方法之雷射劃刻裝置。 The invention also relates to a laser scribing apparatus in which such a method can be performed.

出於清晰及一致之目的,貫穿此正文及隨附申請專利範圍使用之以下術語應與以下闡釋相稱地來理解:-措辭「光束特徵化」係指判定對雷射劃刻方法之準確度、品質、可靠性及/或可複製性具有一影響之一或多個光束特徵之一程序。該措辭涵蓋諸如光束對準及焦點等特徵以及諸如光束剖面(在基板表面上)之大小、形狀及(積分)強度等參數。此等點下文將予以詳述。 For the purposes of clarity and consistency, the following terms used throughout this text and the scope of the accompanying claims are to be accorded to the following description: - the word "beam characterization" refers to the determination of the accuracy of the laser scribe method, Quality, reliability, and/or reproducibility have a program that affects one or more beam characteristics. The wording encompasses features such as beam alignment and focus, as well as parameters such as size, shape, and (integral) intensity of the beam profile (on the substrate surface). These points are detailed below.

-措辭「實質上平坦」應解釋為係指呈一薄板、板、葉片、薄片、平板等之(大致)形式之一基板。此一基板在形式上將大體係(實質 上)平坦的,且呈現由一相對薄的間置「側壁」分離之兩個對置主表面。 - The wording "substantially flat" should be interpreted to mean a substrate in the form of (approximately) a sheet, plate, blade, sheet, plate or the like. This substrate will form a large system (substance Upper) is flat and presents two opposing major surfaces separated by a relatively thin intervening "sidewall".

-措辭「半導體基板」應寬泛地理解為涵蓋一半導體器件或其他積體器件製造於其上之任何基板。此等基板可(舉例而言)包含(各種直徑之)矽或鍺晶圓及/或化合物物質(諸如InAs、InSb、InP、GaSb、GaP或GaAs)之晶圓。該術語亦涵蓋一或多個半導體材料層已沈積於其上(例如,如在LED之製造中)之非半導體材料(諸如藍寶石)。所關注的半導體器件或其他積體器件可(舉例而言)係一積體電路、(被動)電子組件、光電組件、生物晶片、MEMS器件等。此等器件通常將在一既定基板上大量製造,且將通常在該等主表面中之至少一者上以一矩陣配置來佈置。 - The word "semiconductor substrate" is to be interpreted broadly to encompass any substrate on which a semiconductor device or other integrated device is fabricated. Such substrates may, for example, comprise wafers of (of various diameters) germanium or germanium wafers and/or compound species such as InAs, InSb, InP, GaSb, GaP or GaAs. The term also encompasses non-semiconductor materials (such as sapphire) on which one or more layers of semiconductor material have been deposited (eg, as in the manufacture of LEDs). Semiconductor devices or other integrated devices of interest may, for example, be an integrated circuit, (passive) electronic components, optoelectronic components, bio-wafers, MEMS devices, and the like. Such devices will typically be manufactured in large quantities on a given substrate and will typically be arranged in a matrix configuration on at least one of the major surfaces.

-術語「劃刻道」(亦有時稱作一「切割深蝕道」)應理解為係指沿著一基板之一主表面延伸之一路徑(道、深蝕道、條帶),將沿著該路徑來劃刻該基板。此背景下所使用之術語「劃刻」涵蓋諸如刻劃、切割、截切、割切、劈切、凹痕化及刨削等處理程序;特定而言,其涵蓋所謂的「凹槽化」,其涉及基板材料(例如,包含所謂的「低k」材料)之一相對寬條帶至小於基板厚度之一深度之輻射(例如,剝蝕)移除。在一半導體基板之特定情形中,一劃刻道通常在該基板之積體器件之相鄰列之間延伸,且界定將沿著其「切割」該基板之一路徑以便允許所討論之器件之(最終)分離。此一程序經常稱作「單粒化」。應明確注意,此一單粒化程序可係單步驟的(其中在一單個操作中穿過基板之全部深度來切割/割切基板)或多步驟的(其中一第一劃刻不致使穿過基板之全部深度割切基板,且使用一或多個後續程序來完成割切處理程序,諸如額外輻射劃刻、機械劃刻/切割等)。亦應注意,目標表面上之劃刻道可以規則及/或非規則(重複)組態來配置。舉例而言,某些晶圓可包含藉由形成一規則正交網格之劃刻道彼此分離之相同積 體器件之一規則矩陣。另一方法,其他晶圓可包含具有不同大小及/或彼此相對以非規則間距定位之器件,暗指一對應的不規則劃刻道組態。此等劃刻道之配置未必係正交的,例如,其可(部分地)係三角形/六角形的。 - the term "scratching" (also sometimes referred to as "cutting a deep etch") is understood to mean a path (track, deep eclipse, strip) extending along one of the major surfaces of a substrate. The substrate is scribed along the path. The term "scratching" as used in this context covers processes such as scoring, cutting, cutting, cutting, cutting, denting and planing; in particular, it covers so-called "groove" It involves radiation (eg, ablation) removal of one of the substrate materials (eg, including so-called "low-k" materials) from a wide strip to a depth less than one of the substrate thicknesses. In the particular case of a semiconductor substrate, a scribe lane typically extends between adjacent columns of the integrated device of the substrate and defines a path along which the substrate will be "cut" to allow for the device in question. (final) separation. This procedure is often referred to as "single granulation." It should be expressly noted that this singulation procedure can be single-step (where the substrate is cut/cut through the full depth of the substrate in a single operation) or multi-step (where a first scribe does not pass through) The substrate is cut to the full depth of the substrate and one or more subsequent procedures are used to perform the cutting process, such as additional radiation scoring, mechanical scoring/cutting, and the like. It should also be noted that the scribe lanes on the target surface can be configured in a regular and/or irregular (repetitive) configuration. For example, some wafers may include the same product separated from one another by forming a regular orthogonal grid. A rule matrix for one of the body devices. Alternatively, other wafers may include devices having different sizes and/or positioned at irregular intervals relative to one another, implying a corresponding irregular scribe configuration. The arrangement of such scribes is not necessarily orthogonal, for example, it may be (partially) triangular/hexagonal.

下文將更詳細地論述此等點。 These points are discussed in more detail below.

諸如在以上開放段落中詳細說明之一劃刻裝置論述於(舉例而言)WO 2002/076699 A1中。此處,使用一單個雷射光束沿著在一經塗佈半導體晶圓之一主表面上配置成一正交格柵結構之劃刻道形成經剝蝕地帶。一旦已形成此網格,則使用一機械鋸割以藉由沿著該等地帶切割將基板單粒化成晶粒。 One of the scoring devices, such as described in detail in the above paragraph, is discussed, for example, in WO 2002/076699 A1. Here, a single laser beam is used to form a etched zone along a scribe line configured as an orthogonal grid structure on one of the major surfaces of a coated semiconductor wafer. Once the grid has been formed, a mechanical saw is used to singulate the substrate into grains by cutting along the zones.

開放段落中所闡述之類型之另一劃刻裝置論述於(舉例而言)美國專利US 5,922,224中。在此文件中,使用雷射光束之一線性叢集來沿著一劃刻道剝蝕基板材料,因此致使基板雁陣剝蝕線被「以輻射方式刻劃」。以此方式使用多個光束而非一單個(較強大)光束可有助於在基板上產生一較窄剝蝕地帶。此可具有某些優點,舉例而言,尤其當所討論之劃刻道緊密接近一半導體基板上之(易碎及昂貴)器件時。 Another scribing device of the type set forth in the opening paragraph is discussed, for example, in U.S. Patent No. 5,922,224. In this document, a linear cluster of laser beams is used to ablate the substrate material along a scribe lane, thus causing the substrate geese ablation line to be "radiated". Using multiple beams instead of a single (stronger) beam in this manner can help create a narrower ablation zone on the substrate. This may have certain advantages, for example, especially when the scribing track in question is in close proximity to a (fragile and expensive) device on a semiconductor substrate.

當前背景下之(一或多個)所採用雷射光束可聚焦至基板之該目標表面上,或可視需要致使其聚焦於該表面下面(所謂的「隱形切割」)此一次表面方法可(舉例而言)藉由致使剝蝕碎屑被限制於基板材料之體/晶格內而非使其落至基板之表面上而有助於減少污染問題。即使一雷射光束在一表面下面具有一焦點,其仍將在其照射在該表面上之點處展現一光點。 The laser beam used in the current context (one or more) can be focused onto the target surface of the substrate, or can be focused below the surface as desired (so-called "invisible cutting"). This primary surface method can be used (for example In other words, it helps to reduce the contamination problem by causing the ablation debris to be confined within the body/lattice of the substrate material rather than falling onto the surface of the substrate. Even if a laser beam has a focus below a surface, it will exhibit a spot of light at the point where it illuminates the surface.

在一雷射劃刻程序(諸如在開放段落中所提到的雷射劃刻程序)中,用於劃刻半導體基板之(一或多個)雷射光束具有相對於正劃刻之劃刻道之一良好界定之位置係重要的。如上文所論述,一劃刻道將通常係相對窄的,且將通常藉由相對昂貴且精細的積體器件加寬(在一 或多個側上);若一劃刻雷射光束不具有在一既定劃刻道內之一仔細控制之位置,則其可導致對接近的積體器件之損壞及/或產生一不可接受之劃刻形式及/或產生一不正確的經單粒化晶粒大小。儘管在設計、構造及使用一雷射劃刻裝置時施加所有應有的小心,但漂移效應(例如,機械振動、熱現象等)可導致雷射源之光學軸之位置/角度以一不可預測方式(逐漸)移位,若其不被校正則可能導致不可接受之劃刻結果。因此具有減輕此等漂移效應之某一方法係重要的。 In a laser scribing procedure, such as the laser scribing procedure mentioned in the open paragraph, the laser beam(s) used to scribe the semiconductor substrate have a scribe relative to the scribe One of the well-defined locations of the road is important. As discussed above, a scribe will generally be relatively narrow and will typically be widened by relatively expensive and delicate integrated devices (in one Or a plurality of sides; if a scoring laser beam does not have a carefully controlled position within a given scribe lane, it may result in damage to the adjacent integrated device and/or an unacceptable Scratch the form and/or produce an incorrect single granulated grain size. Despite all the care that should be applied when designing, constructing, and using a laser scribe device, drift effects (eg, mechanical vibrations, thermal phenomena, etc.) can cause the position/angle of the optical axis of the laser source to be unpredictable Mode (gradual) shifting, if it is not corrected, may result in unacceptable scoring results. It is therefore important to have a method of mitigating these drift effects.

類似地,雷射光束相對於基板之目標表面之焦位置係重要的,此乃因其將決定該光點之大小及強度,該光點之大小及強度又將影響藉由雷射光束進行之劃刻之寬度及深度以及在切割深蝕道外部之所謂熱影響區(HAZ)之大小(及其中之溫度)。如上文(及下文)所提到,存在輻射劃刻之不同方法,某些方法使用聚焦至目標表面上之雷射光束且其他方法使用故意聚焦於目標表面下面之雷射光束;為選擇及確保此等不同技術之可靠效能,因此具有關於雷射光束之焦點狀態/軸向對準之準確資訊係重要的。再一次,漂移效應可在此方面導致不利移位。 Similarly, the focal position of the laser beam relative to the target surface of the substrate is important because it will determine the size and intensity of the spot, which in turn will affect the laser beam. The width and depth of the scribe and the size of the so-called heat affected zone (HAZ) outside the deep etched road (and the temperature therein). As mentioned above (and below), there are different methods of radiation scribing, some using a laser beam focused onto the target surface and other methods using a laser beam deliberately focused below the target surface; for selection and assurance The reliable performance of these different technologies is therefore important to have accurate information about the focus state/axial alignment of the laser beam. Again, the drift effect can cause unfavorable shifts in this regard.

另外,漂移效應(諸如上文所提到的彼等漂移效應)可(例如)因導致光學畸變或其他失常之一改變及/或沿光學組件(諸如衍射光學元件、透鏡等)之相對位置/定向之一移位而對用於聚焦/指向(一或多個)所採用雷射光束之光學組件具有一不利效應。此又可(例如)因導致光點之不期望伸長/凸出、衛星光點之外觀等及/或因導致光點內之強度分佈之不期望變更而不利地影響在基板之目標表面上產生之一雷射光點之形狀。 Additionally, drift effects, such as those mentioned above, may, for example, result in changes in optical distortion or other aberrations and/or relative position along optical components (such as diffractive optical elements, lenses, etc.) / One of the orientation shifts has an adverse effect on the optical components used to focus/point (one or more) of the laser beams employed. This in turn can adversely affect the generation of the target surface of the substrate, for example, due to undesired elongation/convexity of the spot, appearance of the satellite spot, etc., and/or undesired changes in the intensity distribution within the spot. The shape of one of the laser spots.

執行光束特徵化之一個方法係執行劃刻裝置中之雷射光束對準、焦點及/或其他光束特徵之規則人工檢驗/校正。此將通常涉及劃刻裝置之使用者之介入,需要他執行雷射光束對準、光點大小等之一 視覺檢查。然而,此一人工方法具有相異缺點。舉例而言:-由於其涉及人的判斷,因此其本質上將係主觀的且經受一相對大誤差;-其將需要來自一人之即時注意,在現場或經由一遠端鏈路,因此需要人員水平及成本;-其不可避免地涉及一犧牲消耗品(諸如一空矽晶圓)之使用,作為人工檢驗處理程序之部分將在其上劃刻/灼燒一或多個測試標記及/或線。此轉化為額外成本,以及在手頭上恆定保持消耗品之一庫存之需要。 One method of performing beam characterization is to perform regular manual inspection/correction of laser beam alignment, focus, and/or other beam characteristics in the scoring apparatus. This will typically involve the intervention of the user of the scoring device, which requires him to perform laser beam alignment, spot size, etc. Visual inspection. However, this manual method has a similar disadvantage. For example: - because it involves human judgment, it will be subjective in nature and subject to a relatively large error; - it will require immediate attention from one person, in the field or via a remote link, thus requiring personnel Level and cost; - it inevitably involves the use of a sacrificial consumable (such as an open wafer) on which one or more test marks and/or lines will be scribed/burned as part of a manual inspection process . This translates into additional costs and the need to keep a stock of one of the consumables on hand.

使用一消耗品之需要亦可導致一額外時間損失。舉例而言,若某人想要暫時中斷一批基板之劃刻以便執行一「處理程序中」光束檢驗,則:-將必須中斷基板之正常工作流程,以允許以人工方式載入一空消耗品且接著夾持至基板固持器;-在已執行檢驗之後,在基板之正常工作流程可重新開始之前將必須將該空消耗品鬆開並以人工方式卸下。 The need to use a consumable can also result in an extra time loss. For example, if someone wants to temporarily interrupt the scrimming of a batch of substrates in order to perform a "in-process" beam inspection, then: - the normal workflow of the substrate will have to be interrupted to allow manual loading of an empty consumable And then clamped to the substrate holder; - after the inspection has been performed, the empty consumables will have to be loosened and manually removed before the normal workflow of the substrate can be resumed.

此一程序係耗時的且麻煩的。 This procedure is time consuming and cumbersome.

本發明之一目的係解決此等問題。更具體而言,本發明之一目的係提供一種用於在一雷射劃刻裝置中執行光束特徵化之方法,其允許更高效且客觀地檢查及校正諸如一劃刻雷射光束之對準、大小、強度及形狀等光束參數。特定而言,本發明之一目的係此一方法應提供導致一半導體基板在一不期望位置中/以一不期望方式之輻照之一減小之風險。 One of the objects of the present invention is to solve such problems. More specifically, it is an object of the present invention to provide a method for performing beam characterization in a laser scribe device that allows for more efficient and objective inspection and correction of alignment such as a scribed laser beam Beam parameters such as size, strength and shape. In particular, it is an object of the present invention to provide a method that provides the risk of causing a semiconductor substrate to be reduced in one of the undesired locations/in an undesired manner.

在如開放段落中所詳細說明之一方法中達成此等及其他目的,該方法特徵在於以下步驟:-提供可用於檢視並控制劃刻處理程序之一影像記錄器件,該器 件具有一視域,該視域具有法向於其之一檢視軸;-在夾持區外部於基板固持器上提供一參考板,該參考板包含回應於該雷射光束之輻照而產生受激輻射之一材料;-定位該基板固持器使得該雷射光束照射在該參考板之一點上且激發該材料以在該照射點處產生一局部化(區之)輝光;-使用該影像記錄器件以偵測該輝光之一物理參數。 Achieving these and other objects in one of the methods as detailed in the open paragraph, the method is characterized by the steps of: providing an image recording device that can be used to view and control a scribing process, the device The member has a field of view having a normal viewing axis; a reference plate is provided on the substrate holder outside the clamping region, the reference plate comprising a response in response to the irradiation of the laser beam One of the stimulated radiation; positioning the substrate holder such that the laser beam illuminates a point on the reference plate and excites the material to produce a localized (regional) glow at the illumination point; - using the image The device is recorded to detect one of the physical parameters of the glow.

此一物理參數之實例包括(舉例而言):-該輝光相對於該視域中之一參考點之一位置;-該輝光之一直徑;-該輝光之一積分強度;-該輝光之一形狀,及其組合。 Examples of such a physical parameter include, for example: - a position of the glow relative to one of the reference points in the field of view; - one of the diameters of the glow; - one of the intensity of the glow; - one of the glows Shape, and combinations thereof.

如此處所採用,參考板包含「回應於該雷射光束之輻照而產生受激輻射之一材料」之規定應理解為係指該材料藉以產生光(該「局部化輝光」)之機制而非藉由傳入雷射光之一部分之簡單反射。此處之意圖係來自雷射光束之照射在材料上之「原始」光子激起材料中之物理程序,該等物理程序致使其發射「二次」(受激)光子;寬泛而言,此可稱作帶隙激發/吸收,後續接著輻射複合。在此方面,此等機制之實例包括以下:-所謂的「波長轉換」。此處,來自雷射光束之傳入(原始)光子在材料中產生電子-空穴對。當此等電子-空穴對隨後重組時,存在呈二次(受激)光子之局部化輝光(發光)之形式之能量之一釋放。波長轉換材料之實例包括(舉例而言)SiC(碳化矽)及GaN(氮化鎵)。 As used herein, a reference plate containing "a material that produces one of the stimulated radiation in response to the irradiation of the laser beam" is understood to mean the mechanism by which the material produces light (the "localized glow") rather than By a simple reflection of a portion of the incoming laser light. The intent here is the physical process from the "raw" photon stimulating material of the laser beam that is illuminated by the material, which causes it to emit "secondary" (excited) photons; in general, this can This is called bandgap excitation/absorption, followed by radiation recombination. In this regard, examples of such mechanisms include the following: - the so-called "wavelength conversion." Here, incoming (primary) photons from the laser beam produce electron-hole pairs in the material. When these electron-hole pairs are subsequently recombined, there is one release of energy in the form of a localized glow (luminescence) of the secondary (excited) photons. Examples of wavelength converting materials include, for example, SiC (cerium carbide) and GaN (gallium nitride).

-所謂的「雙光子吸收」。此處,材料之一分子同時吸收來自照射的雷射光束之兩個原始光子。當此分子去激發時,其發射不同於原始光子之波長之一波長之一二次(受激)光子。雙光子吸收材料之實例係 (舉例而言)GaAs(砷化鎵)或ZnTe(碲化鋅)(其可與紅外線雷射波長一起使用)對於更多資訊,見:http://en.wikipedia.org/wiki/Two-photon_absorption - The so-called "two-photon absorption". Here, one of the molecules of the material simultaneously absorbs two original photons from the irradiated laser beam. When the molecule is de-excited, it emits a secondary (excited) photon that is one of the wavelengths of the wavelength of the original photon. Examples of two-photon absorbing materials are, for example, GaAs (gallium arsenide) or ZnTe (zinc telluride) (which can be used with infrared laser wavelengths). For more information, see: http://en.wikipedia .org/wiki/Two-photon_absorption

-白熾光。此處,傳入雷射光束熱激發材料之原子,從而致使其產生一熱輝光。舉例而言,見:http://en.wikipedia.org/wiki/Incandescence - Incandescent light. Here, the incoming laser beam thermally excites the atoms of the material, causing it to produce a hot glow. For example, see: http://en.wikipedia.org/wiki/Incandescence

-發光(舉例而言,該一般性術語涵蓋更多特定現象,諸如光致發光、螢光及磷光)。此處,藉以發射光子之機制在本質上係非熱的。舉例而言,見:http://en.wikipedia.org/wiki/Luminescence http://en.wikipedia.org/wiki/Photoluminescence http://en.wikipedia.org/wiki/Fluorescence http://en.wikipedia.org/wiki/Phosphorescence - Luminescence (for example, this general term covers more specific phenomena such as photoluminescence, fluorescence, and phosphorescence). Here, the mechanism by which photons are emitted is essentially non-thermal. For example, see: http://en.wikipedia.org/wiki/Luminescence http://en.wikipedia.org/wiki/Photoluminescence http://en.wikipedia.org/wiki/Fluorescence http://en .wikipedia.org/wiki/Phosphorescence

就其本性而言,此等機制將通常傾向於產生係多色之一輝光。 By their very nature, these mechanisms will generally tend to produce a glow that is multi-colored.

根據本發明之此方法由於若干個原因係高度有利的。舉例而言:-其不作為光束特徵化程序之部分使用一消耗品(其每次必須被載入及卸下)。而是,其使用一專用參考板,其永久性地存在於基板固持器上,例如,在其上部表面之一角落中/附近。因此,根據本發明執行一光束特徵化僅涉及暫時移動基板固持器以便將參考板定位於雷射光束之路徑中,而無卸下/載入基板/消耗品之(耗時且麻煩的)需要。 This method according to the invention is highly advantageous for several reasons. For example: - It does not use a consumable part (which must be loaded and unloaded each time) as part of the beam characterization program. Rather, it uses a dedicated reference plate that is permanently present on the substrate holder, for example, in/near a corner of its upper surface. Thus, performing a beam characterization in accordance with the present invention involves only temporarily moving the substrate holder to position the reference plate in the path of the laser beam without the need for (loading/loading) substrate/consumables (time consuming and cumbersome). .

-其不作為光束特徵化處理程序之部分需要形成永久性劃刻/灼燒標記。而是,藉由檢驗在參考板上之雷射之照射點處產生之一瞬時輝光來評估光束參數。此一輝光可由比劃刻/灼燒一犧牲晶圓所需之雷射功率/通量溫和得多的雷射功率/通量產生,因此不需要存在對參考 板之任何實質輻射損壞。此外,參考板可包含比一典型矽晶圓粗糙得多的一材料(諸如SiC)。 - It does not require a permanent scribing/burning mark as part of the beam characterization process. Rather, the beam parameters are evaluated by examining one of the instantaneous glows at the illumination point of the laser on the reference plate. This glow can be produced by a much more intense laser power/flux than the laser power/flux required to scribe/burn a sacrificial wafer, so there is no need to have a reference Any substantial radiation damage to the board. Additionally, the reference plate can comprise a material (such as SiC) that is much rougher than a typical tantalum wafer.

-當將一雷射光束引導於一般固態表面處時,其產生散射光之一光點。此光點通常呈現稱為「斑點」之一現象,其由雷射光束中之相干效應導致,因此導致雷射光點具有一斑駁的「形狀移位」外觀。此一有斑點/粒狀外觀通常迷惑人的眼睛及光學偵測器,從而使得難以準確地決定有斑點光點之位置/大小,且因此(舉例而言)阻礙可能採用此一光點之光束對準努力。相比而言,在本發明中,參考板之材料產生受激輻射之一局部化輝光。此輝光係不相干的(此乃因參考板中之產生程序係非發射雷射的),且因此不遭受斑點。 - When a laser beam is directed at a generally solid surface, it produces a spot of scattered light. This spot typically exhibits a phenomenon known as "spot", which is caused by the coherence effect in the laser beam, thus causing the laser spot to have a mottled "shape shift" appearance. This speckled/granular appearance often confuses the human eye and the optical detector, making it difficult to accurately determine the position/size of the spotted spot, and thus, for example, hindering the beam that may use this spot Align efforts. In contrast, in the present invention, the material of the reference plate produces a localized glow of one of the stimulated radiation. This glow is irrelevant (this is due to the non-emission of lasers generated in the reference plate) and therefore does not suffer from speckle.

-由於其使用一影像記錄器件(諸如一相機),且由於其以數學方式判定可量化變數(所提及之位置、直徑、積分強度等),因此本發明方法有助於完全自動化。當結合(舉例而言)影像辨識軟體使用時,本發明方法可以一完全自動化/自主方式執行光束特徵化。則消除與人工特徵化相關聯之上文所提及問題(主觀性、人的存在)。 - The method of the invention facilitates complete automation since it uses an image recording device such as a camera and because it mathematically determines quantifiable variables (position, diameter, integral intensity, etc.). When used in conjunction with, for example, an image recognition software, the method of the present invention can perform beam characterization in a fully automated/autonomous manner. The problems mentioned above (subjectivity, human existence) associated with artificial characterization are eliminated.

有利地,參考板將具有一實質上平坦上部表面,其平面實質上平行於夾持區中之一經夾持基板之平面;然而,此並非一嚴格必要條件(見下文)。 Advantageously, the reference plate will have a substantially flat upper surface with a plane substantially parallel to the plane of one of the clamping zones through which the substrate is clamped; however, this is not a critical requirement (see below).

在根據本發明之方法之一實施例中,使用來自影像記錄器件之資料來計算該光學軸與該檢視軸之間之一位置偏差(例如基於每一軸與一既定參考平面之交點之位置)。更具體而言,使用輝光相對於視域中之上文所提及參考點之所偵測位置來執行該計算,此將產生任何平面光束誤對準(例如,在該參考平面中)之量值/方向。所選擇參考點係一選擇問題:其可係(舉例而言)幾何中心點(抽象或真實)或該視域中之一「十字準線」標記。 In an embodiment of the method according to the invention, data from the image recording device is used to calculate a positional deviation between the optical axis and the viewing axis (e.g., based on the location of the intersection of each axis with a predetermined reference plane). More specifically, the calculation is performed using the detected position of the glow relative to the reference point mentioned above in the field of view, which will result in any amount of planar beam misalignment (eg, in the reference plane) Value / direction. The selected reference point is a selection problem: it can be, for example, a geometric center point (abstract or real) or one of the "crosshair" marks in the field of view.

一旦已使用本發明方法計算雷射源之光學軸與影像記錄器件之 檢視軸之間之一位置偏差,則其可以不同方式來使用。舉例而言,在一個方法中,某人可試圖(例如)藉由使用(自動化)校正構件(諸如一或多個光學偏轉器或者一或多個機械致動器或者兩者之一組合)調整雷射光束之路徑來移除(或至少減小)所量測偏差及/或將雷射源本身移動回至(或朝向)與該檢視軸之最佳對準。在另一方法中,某人照原樣接受所量測位置偏差,但當執行後續劃刻程序時尋求做出一校正性調整,例如,藉由適當地調整基板固持器之位置。在此後一方法之背景下,根據本發明之方法之一實施例具有以下額外步驟:-在基板固持器上提供一經夾持基板;-定位基板固持器以便將該基板之一劃刻道定位於該視域內;-使用影像記錄器件來偵測該劃刻道之一特徵(諸如(舉例而言)一邊緣、中間軸、角落或標記)相對於(該視域中)之該參考點之一位置;-應用該位置偏差以判定該光學軸相對於該特徵之一推斷位置。 Once the optical axis of the laser source and the image recording device have been calculated using the method of the present invention Looking at a positional deviation between the axes, it can be used in different ways. For example, in one method, someone may attempt to adjust, for example, by using an (automated) correcting member such as one or more optical deflectors or one or more mechanical actuators or a combination of the two The path of the laser beam removes (or at least reduces) the measured deviation and/or moves the laser source itself back (or toward) the optimal alignment with the viewing axis. In another method, a person accepts the measured positional deviation as it is, but seeks to make a corrective adjustment when performing a subsequent scoring procedure, for example, by appropriately adjusting the position of the substrate holder. In the context of this latter method, an embodiment of the method according to the invention has the additional steps of: providing a clamped substrate on the substrate holder; positioning the substrate holder to position one of the substrates Within the field of view; using an image recording device to detect a feature of the scribe track (such as, for example, an edge, a center axis, a corner, or a mark) relative to the reference point (in the field of view) a position; - applying the positional deviation to determine that the optical axis infers a position relative to one of the features.

換言之,此一實施例進行以下各項:-在參考板處:量測該輝光G相對於上文所提及參考點R之一(向量)位置P 1 ;-在經夾持基板處:量測該劃刻道特徵F相對於參考點R之一(向量)位置P 2 ;-在經夾持基板處:將雷射光學軸O相對於F之位置推斷為係向量差P 1 -P 2 In other words, this embodiment carries out the following: - at the reference plate: measuring the position P 1 of the glow G with respect to one of the reference points R mentioned above (vector); - at the clamped substrate: amount The position of the scribe track feature F relative to the reference point R (vector) P 2 is measured; at the clamped substrate: the position of the laser optical axis O relative to F is inferred to be the phylogenetic difference P 1 - P 2 .

接著可使用此資訊來對基板固持器之位置做出一向量校正,即-(P 1 -P 2 ),以便將O準確地定位於F上。 This information can then be used to make a vector correction to the position of the substrate holder, namely -( P 1 - P 2 ), in order to accurately position O on F.

在根據本發明之方法之另一實施例中,使用來自影像記錄器件之資料來計算該照射點與雷射光束之最佳焦點之一位置之間之一軸向距離(沿著O)。更具體而言,使用輝光之一所偵測直徑及/或積分強度來執行該計算,此將產生任何軸向光束誤對準之量值。此實施例利用 以下事實:某人考量沿著光學軸之不同點處之雷射光束之一剖面,則彼剖面將(名義上)展現在光束之焦平面內最小直徑(或「腰部大小」;Dmin)及最大積分強度(Imax)。此等「最佳焦點」值可(舉例而言)自一單獨校準運行或一線內量測來判定,藉此將參考板步進過沿著光束之不同軸向位置之一範圍,且輝光之直徑(D)及/或積分強度(I)表示為此等軸向位置之一函數,從而允許量測/內插(藉由遍曆最佳焦點)或推定(藉由接近最佳焦點)Dmin/Imax。一旦知道「最佳焦點」值,則可(例如,藉由自動查閱一查找表)使用在參考板處量測之D及/或I之瞬時值來計算照射點與雷射光束之最佳焦點之位置之距離,或等效地,參考板之頂部表面相對於雷射之焦平面之距離。此處所提及之「步進」可藉由調整基板固持器相對於雷射源之軸向位置及/或藉由使用一可調整光學元件以使雷射相對於基板固持器之一焦點位置移位來實現;此等機制中之任一者或兩者亦可用於執行對所計算軸向光束誤對準(焦位移)之一後續校正。 In another embodiment of the method according to the invention, data from the image recording device is used to calculate an axial distance (along O) between the illumination point and one of the positions of the best focus of the laser beam. More specifically, the calculation is performed using the diameter and/or integrated intensity detected by one of the glows, which will produce a magnitude of any axial beam misalignment. This embodiment takes advantage of the fact that one considers a section of a laser beam at different points along the optical axis, and the profile will (notoriously) exhibit the smallest diameter (or "waist size" in the focal plane of the beam; D min ) and maximum integrated intensity (I max ). Such "best focus" values can be determined, for example, from a single calibration run or an in-line measurement, thereby stepping the reference plate over a range of different axial positions along the beam, and the glow Diameter (D) and/or integral intensity (I) represents a function of one of these axial positions, allowing for measurement/interpolation (by traversing the best focus) or estimation (by approaching the best focus) D Min /I max . Once the "best focus" value is known, the best focus of the illumination point and the laser beam can be calculated (for example, by automatically looking up a lookup table) using the instantaneous values of D and/or I measured at the reference plate. The distance of the position, or equivalently, the distance of the top surface of the reference plate relative to the focal plane of the laser. The "stepping" referred to herein may be by adjusting the axial position of the substrate holder relative to the laser source and/or by using an adjustable optical element to position the laser relative to one of the substrate holders. Shifting is achieved; either or both of these mechanisms can be used to perform subsequent corrections to one of the calculated axial beam misalignments (focal displacements).

若當沿著該檢視軸檢視時參考板之最頂部(經輻照)表面與經夾持基板具有確切相同的高度(例如,由於其係實質上共面的),則可直接採用在參考板處所計算之位置偏差(平面及/或軸向)來執行經夾持基板處之一校正性位置調整。然而,若該高度存在一小差異(例如,由於基板與參考板之間之一相對梯級或傾斜),則可判斷當將在參考板處量測之位置輸出轉譯成於在經夾持基板處使用之位置輸入時一小的額外校正係必要的。此乃因:-對於該光學軸與檢視軸之間之一既定角偏差,該(垂直)高度之一小差異將轉譯為垂直於檢視軸之一小(水平/平面)位置移位;-如此處所提到的一高度差在雷射焦點相對於基板之目標表面之(垂直/軸向)定位中發揮一直接作用。 If the topmost (irradiated) surface of the reference plate has exactly the same height as the clamped substrate when viewed along the viewing axis (eg, because it is substantially coplanar), the reference plate can be used directly The positional deviation (planar and/or axial) calculated by the location is used to perform a calibrated position adjustment at the clamped substrate. However, if there is a small difference in height (eg, due to a relative step or tilt between the substrate and the reference plate), then it can be determined that when the position output measured at the reference plate is translated to be at the clamped substrate A small additional correction is necessary when using the position input. This is due to: - For a given angular deviation between the optical axis and the viewing axis, a small difference in one of the (vertical) heights will be translated as a small (horizontal/planar) positional shift perpendicular to the viewing axis; A height difference mentioned in the table plays a direct role in the (vertical/axial) positioning of the laser focus relative to the target surface of the substrate.

在此背景下,根據本發明之方法之一特定實施例包含以下步 驟:-判定參考板與該經夾持基板之間之法向於基板平面之一高度差;-結合該位置偏差及該軸向距離中之至少一者使用該高度差來調整光束對準。 In this context, a particular embodiment of the method according to the invention comprises the following steps Step: - determining a height difference between the reference plate and the clamped substrate at a plane of the substrate; - using at least one of the positional deviation and the axial distance to adjust the beam alignment.

此處所提及之高度差可(舉例而言)經由計算(基於參考板及經夾持基板之已知厚度及其在基板固持器上之定位)及/或量測(在一偶然校準例程中)來判定。此量測又可以一自動化或人工方式來執行。作為前者之一實例,舉例而言,可為影像記錄器件提供一(市場上可購得之)自動聚焦感測器,在參考板及基板之最佳焦點設定下自動表示(焦距之)一感測器輸出讀數,且接著減去此等讀數。另一選擇係或作為補充,可使用一光學感測器(諸如一干涉儀)來執行所要量測。 The height difference referred to herein may be, for example, calculated (based on the known thickness of the reference plate and the clamped substrate and its positioning on the substrate holder) and/or measured (in an accidental calibration example) Cheng Zhong) to judge. This measurement can be performed either automatically or manually. As an example of the former, for example, a (commercially available) autofocus sensor can be provided for an image recording device, which automatically indicates (focal length) at the optimal focus setting of the reference plate and the substrate. The detector outputs a reading and then subtracts these readings. Alternatively or in addition, an optical sensor, such as an interferometer, can be used to perform the desired measurements.

除量測諸如橫向/平面光束位置、軸向光束位置(焦位置)、光束直徑及/或積分光束強度(在一既定平面中)等光束參數外,亦可使用本發明(例如)藉由使用如上文所提到的影像辨識軟體以判定(舉例而言)形成於參考板上之一雷射光點(輝光)係圓形還是離心的、規則還是不規則的、係單個的還是伴有衛星光點的(例如,不期望的較高衍射級及/或寄生反射)等來檢驗、判斷及接受/拒絕(剖面)光束形狀。在一所量測光點形狀被判斷(由軟體)為在可接受邊界外部之情況下,可採取一預定義動作,例如,可經由一使用者介面(諸如一顯示器)給出一警告信號且暫停劃刻程序直至一裝置使用者介入為止。 In addition to measuring beam parameters such as lateral/planar beam position, axial beam position (focal position), beam diameter and/or integrated beam intensity (in a given plane), the invention may also be used (eg, by use) The image recognition software as mentioned above determines whether, for example, one of the laser spots (glow) formed on the reference plate is circular or centrifugal, regular or irregular, single or satellite light The shape of the beam is checked, judged, and accepted/rejected (profiled) at points (eg, undesired higher diffraction orders and/or parasitic reflections). In the case where a measured spot shape is judged (by software) to be outside the acceptable boundary, a predefined action may be taken, for example, a warning signal may be given via a user interface (such as a display) and The scribe procedure is paused until a device user intervenes.

到現在為止,本發明之論述一直大體參考「一」雷射光束。然而,重要的是認識到所採用雷射源實際上可產生複數個雷射光束,(例如)此乃因其使用一光束劃分配置(諸如一或多個衍射光學元件(DOE))以細分來自一單個雷射之一單一雷射光束,或乃因其使用數個雷射。在此背景下,根據本發明之方法之一特定實施例具有以下態 樣:-雷射源產生一雷射光束叢集;-該至少一個雷射光束係此叢集之一成員,且用作執行整個叢集之光束對準之一基礎。 Until now, the discussion of the present invention has generally referred to "a" laser beam. However, it is important to recognize that the laser source employed can actually generate a plurality of laser beams, for example, because it uses a beam splitting configuration, such as one or more diffractive optical elements (DOE), to subdivide A single laser beam of a single laser, or because it uses several lasers. In this context, a particular embodiment of the method according to the invention has the following A: the laser source produces a cluster of laser beams; the at least one laser beam is a member of the cluster and serves as a basis for performing beam alignment of the entire cluster.

此處,選擇(至少)一個特定雷射光束作為執行相關聯雷射光束之一整個叢集之光束對準之一基礎。出於此目的而選擇之特定雷射光束可係一選擇問題:舉例而言,可選擇叢集之一質心處(或附近)之一光束,或叢集之一末端處(或附近)之一光束。此一雷射光束叢集之一實例提供於(舉例而言)上文所提及之先前技術文件US 5,922,224中,但可構想諸多其他可能的叢集組態。在涉及一雷射光束叢集之所有情形中,熟習此項技術者將很好地能夠選擇一適當光束(或一光束群組)用作執行本發明光束對準方法之一基礎。 Here, one (at least) one particular laser beam is selected as the basis for performing beam alignment of the entire cluster of one of the associated laser beams. The particular laser beam selected for this purpose may be a matter of choice: for example, one of the beams at one (or near) the center of mass, or one of the beams at or near one end of the cluster, may be selected. . An example of such a cluster of laser beams is provided, for example, in the prior art document US 5,922,224 mentioned above, but many other possible cluster configurations are contemplated. In all cases involving a cluster of laser beams, those skilled in the art will be well able to select an appropriate beam (or group of beams) to use as a basis for performing the beam alignment method of the present invention.

應注意,可存在其中可有利地提供本發明將其與一特定類型之光學濾光器一起使用之影像記錄器件之例項。舉例而言,在本發明之參考板中產生(例如,藉由波長轉換)之輝光通常係多色的,且可採用一波長濾光器來選擇此輝光之一(準)單色部分,從而允許使用具有相對簡單色度校正之相對廉價成像光學器件。另一選擇係或作為補充,可選擇使用一濾光器以便削減輝光之強度,從而用於根據所採用影像記錄器件之敏感度來對其進行調整,但可替代地只是選擇減小來自雷射源之輻射輸出之強度。熟習此項技術者將理解此等點,且能夠根據一特定設置之需要來實施此等點(或選擇忽略此等點)。 It should be noted that there may be instances in which an image recording device of the present invention can be advantageously provided for use with a particular type of optical filter. For example, a glow that is generated (eg, by wavelength conversion) in a reference plate of the present invention is typically multi-colored, and a wavelength filter can be used to select one (quasi) monochromatic portion of the glow, thereby Relatively inexpensive imaging optics with relatively simple chromaticity correction are allowed. Alternatively or additionally, a filter may be optionally used to reduce the intensity of the glow for adjustment according to the sensitivity of the image recording device employed, but alternatively only to reduce the laser from the selection The intensity of the source's radiation output. Those skilled in the art will understand these points and can implement these points as needed for a particular setting (or choose to ignore such points).

關於可用於執行本發明之影像辨識軟體,熟習此項技術者將熟悉此軟體及其使用。影像辨識演算法可(舉例而言)藉由尋求與一既定人工「程式化」的參考影像之交叉相關或藉由執行與一先前所選擇模板之模板匹配而工作。存在各種用於此目的之市場上可購得軟體包。 Regarding the image recognition software that can be used to perform the present invention, those skilled in the art will be familiar with the software and its use. The image recognition algorithm can operate, for example, by seeking cross-correlation with a given artificial "stylized" reference image or by performing a template match with a previously selected template. There are various commercially available software packages for this purpose.

應注意,本發明中所使用之影像記錄器件可係(舉例而言)一攝影 機或靜止相機,且將理想地直接產生有助於使用影像辨識軟體處理之一數位影像;另一選擇係,亦可構想一經數位化類比影像。 It should be noted that the image recording device used in the present invention may be, for example, a photograph. A camera or still camera, and ideally directly produces a digital image that facilitates processing with the image recognition software; another option, a digital analog image can also be contemplated.

儘管本發明產生優於先前技術之諸多優點,但一個優點特別值得在此處提及。優於本發明允許較準確地特徵化/量測及校正諸如光束位置、光束大小及光束形狀等參數,因此其允許可藉以在一基板中形成一劃刻/凹槽之橫向位置準確度之一顯著提高。其在一「多遍」劃刻處理程序中具有特別重要性,在該「多遍」劃刻處理程序中深度△Zn之連續刻痕/凹槽重疊以便產生累積深度Σ△Zn之一所得刻痕/凹槽。在此一情景中,本發明允許大大增加之重疊準確度,從而產生一更令人滿意的最終結果。 While the present invention yields many advantages over the prior art, one advantage is particularly worth mentioning here. Better than the present invention allows for more accurate characterization/measurement and correction of parameters such as beam position, beam size and beam shape, thus allowing one of the lateral positional accuracy of a scribe/groove to be formed in a substrate Significantly improved. It is of particular importance in a "multi-pass" scribing process in which successive scores/grooves of depth ΔZ n overlap in order to produce one of the cumulative depths Σ ΔZ n The resulting score/groove. In this scenario, the present invention allows for greatly increased overlap accuracy, resulting in a more satisfactory end result.

值得一提的是,儘管在半導體基板之劃刻中保持「光學頭」(即,用於(一或多個)雷射光束之聚焦光學器件、分束器或DOE等)固定且視需要移動基板固持器係慣例,但可構想顛倒此等運動角色,即,保持基板固定且改為移動光學頭(例如,藉助將光學頭連接至一固定雷射之一撓性光纖)。此機械反轉對本發明之關鍵不具有任何實質影響,且可被視為歸屬於隨附申請專利範圍之範疇內。 It is worth mentioning that although the "optical head" (ie, the focusing optics (beam splitter or DOE, etc. for the laser beam(s)) is fixed in the scribing of the semiconductor substrate and is moved as needed Substrate holders are conventional, but it is conceivable to reverse these moving characters, i.e., to keep the substrate fixed and to move the optical head (e.g., by attaching the optical head to one of the fixed lasers). This mechanical reversal does not have any material impact on the key to the present invention and can be considered to fall within the scope of the accompanying claims.

在根據本發明之一例示性方法(其無論如何並非意欲限制本發明之範疇而是僅出於提供具體的實際實例之目的而在此處呈現)中,以下態樣適用:-一輸入雷射光束經選擇而具有在範圍200nm至3000nm內之一波長及在範圍1mW至100W內之一輸出功率。所選擇雷射將極大地取決於正在劃刻之基板之材料。此範圍內之波長可由各種雷射產生。舉例而言,一固態Nd:YAG雷射產生1064nm之一波長,其中諧波係532nm及355nm。另一選擇係,可使用(舉例而言)具有1062nm之一波長之一經摻雜光纖雷射。該355nm波長係特別有吸引力的,此乃因:▫其往往由半導體材料強烈地吸收; ▫其通常可相對容易地被聚焦為一相對小的光點大小。 In an exemplary method according to the invention, which is not intended to limit the scope of the invention, but is presented here for the purpose of providing a specific practical example, the following aspects apply: - an input laser The beam is selected to have one of the wavelengths in the range of 200 nm to 3000 nm and one of the output in the range of 1 mW to 100 W. The laser selected will greatly depend on the material of the substrate being scribed. The wavelengths within this range can be generated by a variety of lasers. For example, a solid state Nd:YAG laser produces one wavelength of 1064 nm, with the harmonics being 532 nm and 355 nm. Alternatively, a doped fiber laser having one of the wavelengths of 1062 nm can be used, for example. The 355 nm wavelength is particularly attractive because it is often strongly absorbed by semiconductor materials; It is usually relatively easy to focus on a relatively small spot size.

然而,此完全係一選擇問題,且可替代地採用其他波長。 However, this is entirely a matter of choice, and other wavelengths may alternatively be employed.

-使用能夠遞送一脈衝雷射光束之一雷射源,其中一脈衝持續時間在約1微秒至100飛秒之範圍內。在此方面,應注意:▫當執行實際雷射劃刻時,以脈衝模式使用雷射;▫當根據本發明執行光束對準時,未必使光束脈動,且可視需要改為在連續波模式中使用。 - Using a laser source capable of delivering a pulsed laser beam, wherein one pulse duration is in the range of about 1 microsecond to 100 femtoseconds. In this regard, it should be noted that when performing actual laser scoring, the laser is used in a pulsed mode; when performing beam alignment in accordance with the present invention, the beam is not necessarily pulsed and can be used in continuous wave mode as needed. .

-使用一衍射光學元件(DOE)(或(舉例而言)偏光分束器之一叢集),輸入雷射被劃分以便形成具有2至20個成員之一光束叢集。此步驟係選用的,且可改為選擇使用一單個/為經劃分劃刻光束。當選擇劃分輸入雷射時,毗鄰焦點之分離可(舉例而言)經選擇而位於大約範圍5μm至500μm內,例如,約50μm至70μm。應注意,如此產生之光束叢集形式不必係線性的(一維);可改為選擇產生(例如)呈n個光點×m個光點(nm係整數)之一矩形之形式之一二維叢集。 - Using a diffractive optical element (DOE) (or, for example, a cluster of polarizing beam splitters), the input laser is divided to form a beam cluster having one of 2 to 20 members. This step is optional and can instead be selected using a single/divided beam. When the input laser is selected to be split, the separation of adjacent focal points may, for example, be selected to be within the range of about 5 [mu]m to 500 [mu]m, for example, about 50 [mu]m to 70 [mu]m. It should be noted that the beam cluster form thus generated does not have to be linear (one-dimensional); instead one of the forms of a rectangle that produces, for example, n spots x m spots ( n and m-type integers) can be selected. Two-dimensional clustering.

-若選擇將(一或多個)雷射光束聚焦至基板體中而非聚焦至其目標表面上(隱形切割),則該(等)雷射光束之(一或多個)焦點低於目標表面之(一或多個)深度經選擇而位於範圍20μm至700μm內。 - if the laser beam(s) are selected to be focused into the substrate body rather than being focused onto its target surface (invisible cut), the (one or more) focus of the (equal) laser beam is lower than the target The depth of the surface(s) is selected to be in the range of 20 μm to 700 μm.

-舉例而言,參考板(之頂部表面)包含一波長轉換材料(諸如GaN或SiC)或一雙光子吸收材料(諸如GaAs)。舉例而言,其具有橫向尺寸ca.1×1cm2For example, the reference plate (the top surface) comprises a wavelength converting material (such as GaN or SiC) or a two-photon absorbing material (such as GaAs). For example, it has a lateral dimension ca. 1 x 1 cm 2 .

實施例1Example 1

圖1呈現適合於進行根據本發明之一方法之一裝置A之一特定實施例的部分之一端視圖,該裝置可用於沿著一實質上平坦半導體基板1之一目標表面3上之至少一個劃刻道2(未繪示;見圖2)劃刻基板1。另一方面,圖2呈現圖1之下部部分之一態樣之一平面圖。圖3展示與圖1中相同之裝置,但其係在本發明方法之一實施例之一態樣之執行期間。注意該等圖中所展示之笛卡爾(Cartesian)座標系統X、Y、Z。 1 presents an end view of a portion of a portion of a device A suitable for performing one of the methods of the present invention, the device being operable for at least one of the target surfaces 3 of a substantially planar semiconductor substrate 1 The substrate 1 is scribed 2 (not shown; see Fig. 2). On the other hand, Fig. 2 shows a plan view of one of the lower portions of Fig. 1. Figure 3 shows the same apparatus as in Figure 1, but during the execution of one aspect of one of the embodiments of the method of the present invention. Note the Cartesian coordinate systems X, Y, Z shown in the figures.

具體而言,圖1、圖2及圖3共同展示以下:▪一雷射源4,其沿著一光學軸7輸出至少一個(脈衝)雷射光束L。雷射源4連接至一控制器14,該控制器可用於控制諸如光束之脈衝持續時間及/或功率/通量等參數及其他。視需要,可致使雷射源4以連續波(CW)模式操作。 In particular, Figures 1, 2 and 3 together show the following: a laser source 4 which outputs at least one (pulsed) laser beam L along an optical axis 7. The laser source 4 is coupled to a controller 14 that can be used to control parameters such as pulse duration and/or power/flux of the beam and others. The laser source 4 can be caused to operate in a continuous wave (CW) mode as needed.

▪一可移動基板固持器(工作臺、夾盤)9,其具有基板1安裝至其上之一(中心定位)夾持區,以便將目標表面3呈現至雷射源4。舉例而言,此安裝傳統上經由周邊夾持而發生。 ▪ A movable substrate holder (workbench, chuck) 9 having one (center-positioned) clamping area to which the substrate 1 is mounted to present the target surface 3 to the laser source 4. For example, this installation has traditionally occurred via perimeter clamping.

▪一台總成17,其可相對於光學軸7將基板固持器9定位於XY平面中。 ▪ An assembly 17 that positions the substrate holder 9 in the XY plane relative to the optical axis 7.

▪一投射(即,成像)系統11,其用於將雷射光束L投射至基板1上。在光束L在基板1上之照射點處,形成一光點S。投射系統11可用於視需要將光束L聚焦至基板1上或基板1中,且亦可執行失常/畸變校正(舉例而言)。 A projection (i.e. imaging) system 11 for projecting a laser beam L onto a substrate 1. At the point of illumination of the beam L on the substrate 1, a spot S is formed. The projection system 11 can be used to focus the light beam L onto or into the substrate 1 as desired, and can also perform aberration/distortion correction (for example).

圖2展示自上方檢視之基板1,其擱置於基板固持器9之夾持區上(此處未明確表示夾持區,但其將被視為固持器9之一區域,該區域意欲(例如)藉助在彼區域中/周圍之適合夾持構件而固持待劃刻之一基板)。在目標表面3上,圖解說明各種劃刻道2。此等劃刻道2在積體器件23(其在表面3上以一矩陣配置分佈)之間以一X/Y格柵圖案伸展;一典型半導體基板1上將通常存在非常多的此等器件23,但此處已圖解說明僅幾個,以便不使圖式混亂。該圖繪示沿一特定方向(在此情形中係±X)沿著多個連續劃刻道2劃刻基板1之一「縱向掃描及橫向步進」方法。舉例而言:▪藉由沿-X方向掃描雷射光束L來沿著劃刻道2a劃刻基板1;實際上,此相對運動可實際上藉由使用台總成17(見圖1)來達成以沿+X方向掃描基板固持器9。 Figure 2 shows the substrate 1 viewed from above, resting on the clamping area of the substrate holder 9 (the clamping area is not explicitly shown here, but it will be considered as an area of the holder 9, which is intended (e.g. Holding one of the substrates to be scribed by means of a suitable clamping member in/around the area. On the target surface 3, various scribe lanes 2 are illustrated. These scribe lanes 2 are stretched in an X/Y grid pattern between the integrated devices 23 (which are distributed in a matrix arrangement on the surface 3); there will typically be a very large number of such devices on a typical semiconductor substrate 1. 23, but only a few are illustrated here so as not to confuse the schema. The figure illustrates a method of "longitudinal scanning and lateral stepping" of one of the substrates 1 along a plurality of consecutive scribe lanes 2 along a particular direction (in this case, ±X). For example: ▪ The substrate 1 is scribed along the scribe lane 2a by scanning the laser beam L in the -X direction; in fact, this relative motion can actually be achieved by using the stage assembly 17 (see Figure 1). It is achieved to scan the substrate holder 9 in the +X direction.

▪在完成沿著劃刻道2a伸展之劃刻之後,將使用台總成17將基板固持器9沿+Y方向步進一量△Y;因此,雷射光束L將實際上相對於目標表面3步進一量-△Y。 ▪ After completing the scribe along the scribe lane 2a, the stage holder 17 will be used to step the substrate holder 9 in the +Y direction by an amount ΔY; therefore, the laser beam L will actually be relative to the target surface 3 step by one amount - △ Y.

▪現在藉由沿+X方向掃描雷射光束L來沿著劃刻道2b劃刻基板1;實際上,此相對運動可藉由使用台總成17沿-X方向掃描基板固持器9來達成。 ▪ The substrate 1 is now scribed along the scribe lane 2b by scanning the laser beam L in the +X direction; in fact, this relative motion can be achieved by scanning the substrate holder 9 in the -X direction using the stage assembly 17. .

▪等等。 ▪ Wait.

應注意,存在體現台總成17之各種方式,且熟習此項技術者將 能夠在此方面實施諸多替代方案。圖2中所示意性地繪示之一項特定實施例使用兩個單獨線性馬達(未繪示)沿著軸A1及A2獨立地驅動基板固持器9,軸A1及A2與X、Y軸成45°角度;沿X或Y之運動則涉及沿著A1及A2軸之同時驅動。通常,將(例如)藉助一氣浮軸承或磁性軸承(未繪示)致使基板固持器9在XY平面中之一參考表面(諸如一經拋光石頭表面)上方平滑地浮動。舉例而言,可藉助諸如干涉儀或線性編碼器等定位器具(未繪示)來監視並控制基板固持器9之確切位置。此外,亦通常將採用焦點控制/位準感測(未繪示),以確保基板1之目標表面3維持在相對於投射系統11之一所要位準處。所有此等習用定位及控制態樣將係熟習此項技術者極熟悉的,且在此處不需要任何進一步闡釋。 It should be noted that there are various ways of embodying the station assembly 17, and those skilled in the art will Many alternatives can be implemented in this regard. One particular embodiment, schematically illustrated in Figure 2, uses two separate linear motors (not shown) to independently drive the substrate holder 9 along axes A1 and A2, with axes A1 and A2 being aligned with the X and Y axes. 45° angle; movement along X or Y involves simultaneous driving along the A1 and A2 axes. Typically, the substrate holder 9 will be smoothly floated over a reference surface (such as a polished stone surface) in the XY plane, for example, by means of an air bearing or magnetic bearing (not shown). For example, the exact position of the substrate holder 9 can be monitored and controlled by means of a positioning instrument (not shown) such as an interferometer or linear encoder. In addition, focus control/level sensing (not shown) will also typically be employed to ensure that the target surface 3 of the substrate 1 is maintained at a desired level relative to one of the projection systems 11. All such conventional positioning and control aspects will be familiar to those skilled in the art and do not require any further explanation here.

熟習此項技術者亦將瞭解,傳統上,將首先將欲經歷劃刻之一基板1安裝於跨越於一圓周框架內之一箔片上,且因此將必須被安裝於基板固持器9之夾持區上的是基板、箔片及圓周框架之複合結構。同樣,熟習此項技術者將瞭解,在劃刻一整個基板1之後,可藉由橫向拉伸該箔片而沿著各種劃刻道分離基板。此等係半導體基板劃刻領域之此等本質態樣,因此其在此處不需要進一步闡釋;對於更多資訊,參考以下公開案(舉例而言):▫US 2008/0196229 A1及US 5,979,728。 Those skilled in the art will also appreciate that, conventionally, one of the substrates 1 to be scribed will be first mounted over a foil that spans a circumferential frame and will therefore have to be mounted to the substrate holder 9 On the area is a composite structure of a substrate, a foil and a circumferential frame. Similarly, those skilled in the art will appreciate that after scribing an entire substrate 1, the substrate can be separated along various scribe lanes by laterally stretching the foil. These are the nature of the field of semiconductor substrate scribing, and therefore need not be further explained here; for further information, reference is made to the following publications (for example): US 2008/0196229 A1 and US 5,979,728.

http://en.wikipedia.org/wiki/Dicing_tape http://en.wikipedia.org/wiki/Dicing_tape

http://www.lintec-usa.com/di_t.cfm#anc01http://www.lintec-usa.com/di_t.cfm#anc01 .

現在返回至圖1,裝置A進一步包含:▪一影像記錄器件8(例如,一數位相機),其可用於檢視在光點S附近之目標表面3之一部分,該部分之大小由器件8之視域之大小決定。垂直於該視域,器件8具有一檢視軸(正常視線)7”,且連接至一控制器12,該控制器可(舉例而言)用於在本發明之背景下執行影像辨 識及各種計算(見下文)。 Returning now to Figure 1, device A further includes: an image recording device 8 (e.g., a digital camera) that can be used to view a portion of the target surface 3 near the spot S, the size of the portion being viewed by device 8 The size of the domain is determined. Vertically to the field of view, device 8 has an viewing axis (normal line of sight) 7" and is coupled to a controller 12 that can, for example, be used to perform image recognition and various calculations in the context of the present invention. (as follows).

▪一燈16,其可依據來自控制器12之命令產生光,且其可輔助影像記錄器件8檢視目標表面3上之所關注特徵,諸如劃刻道2。燈16可根據一既定情形之需要產生一(頻閃)閃光或連續照明。舉例而言,其可包含一發光二極體(LED)。 A light 16 that produces light in response to commands from the controller 12 and which assists the image recording device 8 in viewing features of interest on the target surface 3, such as the scribe track 2. Lamp 16 can produce a (strobe) flash or continuous illumination as desired for a given situation. For example, it can include a light emitting diode (LED).

▪一分束器6(例如,一分色鏡),其可用於形成一所謂的「軸上」組態,藉此雷射源4之光學軸7與影像記錄器件8之檢視軸7”沿著接近基板固持器9之一共同軸7’而名義上共軸。自目標表面3之該檢視部分發出之光之一部分將沿著軸7’行進,撞擊分束器6且沿著軸7”被反射至影像記錄器件8中。下文將關於圖5來論述此軸上組態之一替代方案(採用一所謂的「離軸」設置)。 ▪ A beam splitter 6 (e.g., a dichroic mirror) that can be used to form a so-called "on-axis" configuration whereby the optical axis 7 of the laser source 4 and the viewing axis 7" of the image recording device 8 follow A portion of the common axis 7' is nominally coaxial with respect to one of the substrate holders 9. A portion of the light emitted from the view portion of the target surface 3 will travel along the axis 7', striking the beam splitter 6 and along the axis 7" It is reflected to the image recording device 8. An alternative to this on-axis configuration (using a so-called "off-axis" setting) will be discussed below with respect to Figure 5.

▪一濾光器10,例如一適當干涉濾光器。舉例而言,此濾光器10可用於實質上削減來自雷射源4之所採用雷射光之波長,但實質上透射由燈16產生之(至少某些)光。以此方式,數位相機8可擷取一影像,其中光點S之位置對照目標表面3清晰可見,而不會因來自光點S之過度強度而過飽和。 ▪ A filter 10, such as a suitable interference filter. For example, the filter 10 can be used to substantially reduce the wavelength of the laser light employed from the laser source 4, but substantially transmissive (at least some) of the light produced by the lamp 16. In this manner, the digital camera 8 can capture an image in which the position of the spot S is clearly visible against the target surface 3 without being oversaturated by excessive intensity from the spot S.

如此處所繪示,控制器12連接至雷射控制器14。控制器12亦連接至台總成17,使得可依據由影像記錄器件8擷取之影像回應於由控制器12執行之自動化分析而調節基板1與軸7’之相對定位。將在下文中更詳細地解釋本發明之此態樣。 Controller 12 is coupled to laser controller 14 as shown herein. The controller 12 is also coupled to the stage assembly 17 such that the relative positioning of the substrate 1 and the shaft 7' can be adjusted in response to automated analysis performed by the controller 12 in accordance with the image captured by the image recording device 8. This aspect of the invention will be explained in more detail below.

如上文所論述,來自雷射源4之雷射光束L之光學軸7與影像記錄器件8之檢視軸7”沿著接近基板固持器9之共同軸7’名義上共軸。然而,實際上,「寄生」熱及/或機械效應(舉例而言)可導致雷射光學軸遠離此標稱位置之(週期性)輕微漂移,使得雷射光學軸與影像記錄器件8之檢視軸在其與目標表面3之交點處不再令人可接受地共軸/重合。此係不利的,乃因圖1及圖3中所繪示之影像記錄器件8之標稱使 用假定與其檢視軸之恰當雷射光束對準。 As discussed above, the optical axis 7 of the laser beam L from the laser source 4 and the viewing axis 7" of the image recording device 8 are nominally coaxial along the common axis 7' of the substrate holder 9. However, in practice "parasitic" thermal and/or mechanical effects (for example) may cause a slight (regular) drift of the laser optical axis away from the nominal position such that the laser optical axis and the viewing axis of the image recording device 8 are in The intersection of the target surfaces 3 is no longer acceptable for coaxial/coincidence. This is unfavorable because of the nominality of the image recording device 8 illustrated in FIGS. 1 and 3. Align with the appropriate laser beam assumed to be with its viewing axis.

為解決此問題,本發明提供一種在一裝置(諸如前文所論述之裝置)中檢查並校正光束對準(及其他光束參數)之方法(及其他)。為此,於在經夾持基板1之周邊外部(即,在基板夾持器9之夾持區外部)之一位置中在基板固持器9上提供一相對小參考板5。如上文所論述,此參考板(之一上部表面之至少部分)包含回應於該雷射光束之輻照而產生受激輻射之一材料,例如一波長轉換材料,諸如SiC或GaN。理想地,此參考板5之頂部表面與基板1之目標表面3共面,使得當沿著Z方向檢視時兩者之間不存在「高度差」;然而,情形未必如此。參考板5可藉由各種手段附接至基板固持器9,例如膠、磁性夾持、螺絲等。藉由給予控制器17一適當命令,基板固持器9可移動以便將參考板5定位於雷射光束L之路徑中,即,使得來自雷射源4之光束L(其出於本目的可經選擇以在CW模式中而非脈衝模式中操作(若需要如此))照射在參考板5之頂部表面上。照射的雷射光激發參考板5之材料,從而致使其在照射點/照射區域處產生一局部化(區之)輝光S’。現在將藉助圖4A及圖4B來解釋此參考板5之進一步使用。 To address this problem, the present invention provides a method (and others) for examining and correcting beam alignment (and other beam parameters) in a device, such as the device discussed above. To this end, a relatively small reference plate 5 is provided on the substrate holder 9 in a position outside the periphery of the clamped substrate 1 (i.e., outside the clamping region of the substrate holder 9). As discussed above, the reference plate (at least a portion of an upper surface) includes a material that produces stimulated radiation in response to irradiation of the laser beam, such as a wavelength converting material such as SiC or GaN. Ideally, the top surface of this reference plate 5 is coplanar with the target surface 3 of the substrate 1 such that there is no "height difference" between the two when viewed along the Z direction; however, this is not necessarily the case. The reference plate 5 can be attached to the substrate holder 9 by various means such as glue, magnetic clamping, screws, and the like. By giving the controller 17 an appropriate command, the substrate holder 9 can be moved to position the reference plate 5 in the path of the laser beam L, i.e. such that the beam L from the laser source 4 (which can be used for this purpose) The choice is to illuminate the top surface of the reference plate 5 by operating in the CW mode instead of the pulse mode, if so desired. The irradiated laser light excites the material of the reference plate 5 such that it produces a localized (regional) glow S' at the illumination/irradiation area. Further use of this reference plate 5 will now be explained with the aid of Figures 4A and 4B.

圖4A及圖4B圖解說明在根據本發明之一方法之一實施例(之一態樣)之執行期間影像記錄器件8之一視域V。更特定而言:-圖4A展示圖3之情形之視域V,藉此檢視參考板5及輝光S’;-圖4B展示圖1之情形之視域V,藉此檢視目標表面3。 4A and 4B illustrate a field of view V of an image recording device 8 during execution of an embodiment (one aspect) of a method in accordance with the present invention. More specifically: - Figure 4A shows the field of view V of the situation of Figure 3, whereby the reference plate 5 and the glow S' are viewed; - Figure 4B shows the field of view V of the situation of Figure 1, whereby the target surface 3 is viewed.

在兩種情形中,視域V被圖解說明為圓形;然而,此不應被視為一限制,且熟習此項技術者將認識到此一視域亦可具有其他形狀,例如矩形。 In both cases, the field of view V is illustrated as being circular; however, this should not be considered a limitation, and those skilled in the art will recognize that such a field of view may have other shapes, such as a rectangle.

以圖4A開始,視域V中之一參考點由R指示,且此處被視為V之幾何中心點(但如上文已提及,其他選擇亦係可能的)。由雷射光束L在參考板5上之照射產生之局部化輝光在此處被圖解說明為係一小圓 圈S’。理想地,輝光S’將(在本情形中)與參考點R確切重合;然而,由於上文所論述之漂移效應,現在存在S’相對於R之一(非零)向量位移(位置偏差),在此處其由向量P表示。使用影像辨識軟體,可自動辨識S’之位置且可自動判定向量P。現在翻至圖4B,其展示半導體基板1之目標表面3上方之情形。為便於參考,此處已使用虛線將來自圖4A之項目S’及P圖解說明為虛幻特徵。視域V中展示一組相交劃刻道2,一個沿著Y方向伸展且另一個沿著X方向伸展。虛線2’指示此等劃刻道之中心軸,且項目F指示一特定所關注特徵,其在此情形中係兩個軸2’之交點。再一次,可使用影像辨識軟體來自動偵測特徵2、2’及F。如此處所繪示,雷射光束L被關斷,且意圖係僅當其光學軸與特徵F恰當對準時將其接通。為此,可使用影像辨識軟體自動量測特徵F相對於參考點R之向量位置P’。根據本發明,可接著計算光學軸相對於特徵F之位置係向量P-P’。若在接通雷射光束L之前基板固持器9移動(由控制器17)一向量-(P-P’),則雷射將準確地照射在特徵F上。 Beginning with Figure 4A, one of the reference points in the field of view V is indicated by R and is here considered to be the geometric center point of V (although other options are also possible as mentioned above). The localized glow produced by the illumination of the laser beam L on the reference plate 5 is illustrated here as being a small circle S'. Ideally, the glow S' will (in this case) exactly coincide with the reference point R; however, due to the drift effect discussed above, there is now one (non-zero) vector displacement (positional deviation) of S' versus R Where it is represented by the vector P. Using the image recognition software, the position of S' can be automatically recognized and the vector P can be automatically determined. Turning now to Figure 4B, the situation above the target surface 3 of the semiconductor substrate 1 is shown. For ease of reference, items S' and P from Figure 4A have been illustrated herein as phantom features using dashed lines. A set of intersecting scribe lanes 2 are shown in the field of view V, one extending in the Y direction and the other extending in the X direction. The dashed line 2' indicates the central axis of the scribe lanes, and the item F indicates a particular feature of interest, which in this case is the intersection of the two axes 2'. Once again, the image recognition software can be used to automatically detect features 2, 2' and F. As illustrated herein, the laser beam L is turned off and is intended to be turned on only when its optical axis is properly aligned with the feature F. To this end, the image recognition software can be used to automatically measure the vector position P' of the feature F relative to the reference point R. According to the invention, the position vector P - P ' of the optical axis relative to the feature F can then be calculated. If the substrate holder 9 moves (by the controller 17) a vector - ( P - P ') before the laser beam L is turned on, the laser will accurately illuminate the feature F.

作為調整台總成17之一設定點之一替代方案(或補充),可(舉例而言)將投射系統11體現為包含可經組態以沿X/Y方嚮導引雷射光束L之至少一個致動器驅動可調整光學元件,且可調整此元件之設定點(舉例而言)。 As an alternative (or supplemental) to one of the set points of the stage assembly 17, the projection system 11 can be embodied, for example, to include at least a laser beam L that can be configured to direct the laser beam L in the X/Y direction. An actuator drives the adjustable optical element and the set point of the element can be adjusted, for example.

實施例2Example 2

現在將更詳細地解釋可如何使用本發明之方法來探查/校正軸向光束對準,即,所採用雷射光束L之焦點狀態。 How the method of the present invention can be used to probe/correct axial beam alignment, i.e., the focus state of the laser beam L employed, will now be explained in more detail.

首先翻至圖3,如上文所論述,當雷射光束L照射在參考板5上時,其產生一實質上圓形輝光S’,如圖4A中所圖解說明。光學科學規定此光點S’之直徑(D)及積分強度(I)將依據光束L相對於參考板5之頂部表面之焦點狀態而變化。可以各種方式來調整此焦點狀態,例如, 藉由沿著Z軸向上/向下移動固持器9,及/或藉由使用投射系統11中之一可調整透鏡元件(ALE),如熟習此項技術者將完全理解。更具體而言,若光束L在參考板5上移動過其焦點(自焦點上方至焦點下方),則:-直徑D將自(相對)大進行至小且重新回到大,具有最佳焦點處之一最小值Dmin;-積分強度I將自(相對)低進行至高且重新回到低,具有最佳焦點處之一最大值ImaxTurning first to Figure 3, as discussed above, when the laser beam L is illuminated on the reference plate 5, it produces a substantially circular glow S', as illustrated in Figure 4A. Optical science stipulates that the diameter (D) and integral intensity (I) of this spot S' will vary depending on the state of focus of the beam L relative to the top surface of the reference plate 5. This focus state can be adjusted in various ways, for example, by moving the holder 9 up/down along the Z-axis, and/or by using one of the projection systems 11 to adjust the lens element (ALE), as is familiar with this item. The technician will fully understand. More specifically, if the beam L moves over the reference plate 5 past its focus (from above the focus to below the focus), then: - the diameter D will proceed from (relatively) large to small and back to large with the best focus One of the minimum values D min ; - the integrated intensity I will go from (relatively) low to high and back to low with one of the best focus points, I max .

現在可執行一校準例程,藉此針對光束L之不同焦點狀態表示D及/或I之值(適當地表示固持器9之Z位置及/或ALE之位置),可據此編譯一查找表。 A calibration routine can now be performed whereby the values of D and/or I are represented for different focus states of the beam L (appropriately indicating the Z position of the holder 9 and/or the position of the ALE), from which a lookup table can be compiled .

此查找表(與可能的內插/推定一起)可在稍後的情形中用於將D及/或I之一所量測值轉譯成一對可能的焦點狀態。若量測D及/或I之兩個值(彼此緊密接近,具有一小介入焦點狀態調整),則可自查找表推導一唯一焦點狀態。知道參考板5處之焦點狀態允許判定基板1(圖1)處之焦點狀態-慮及可存在於參考板5之頂部表面與基板1之表面3之間之一可能高度差(沿著Z)。 This lookup table (along with possible interpolation/estimation) can be used in later cases to translate one of the measured values of D and/or I into a pair of possible focus states. If two values of D and/or I are measured (close to each other with a small intervention focus state adjustment), a unique focus state can be derived from the lookup table. Knowing the focus state at the reference plate 5 allows the determination of the focus state at the substrate 1 (Fig. 1) - taking into account the possible height difference (along Z) between one of the top surface of the reference plate 5 and the surface 3 of the substrate 1. .

除檢驗諸如輝光區S’之直徑及/或強度等參數外,亦可(自動)分析其形狀。在本實例中,此形狀理想地/名義上為(實質上)圓形;然而,如上文所論述,可構想漂移效應可能導致此形狀之變形,例如,導致不期望之伸長、一不規則形狀之呈現、一雜亂周界等。影像辨識軟體可辨識可能存在之此等偏差,且提醒裝置使用者在劃刻開始之前注意此等偏差。 In addition to testing parameters such as the diameter and/or intensity of the glow zone S', the shape can also be (automatically) analyzed. In the present example, this shape is ideally/nominally (substantially) circular; however, as discussed above, it is contemplated that drift effects may result in deformation of this shape, for example, resulting in undesired elongation, an irregular shape. Presentation, a messy perimeter, etc. The image recognition software can recognize such deviations that may exist and alert the device user to pay attention to such deviations before the start of the scribing.

實施例3Example 3

如上文已知指出,圖1及圖3中所繪示之設置採用影像記錄器件8之一軸上檢視組態。然而,舉例而言,亦可設想採用一離軸組態(諸 如圖5中所繪示之組態)之一實施例。此處,影像記錄器件(相機)8獨立地指向基板固持器9,且其檢視軸7”不與雷射光束L沿著其傳播之光學軸7共軸。相機8可經指向以使得其檢視軸7”在目標表面3之平面處或附近與光學軸7相交;這樣,光點S將名義上在相機8之視域之中心處或附近(若參考板5之頂部表面與目標表面3至少大致共面,輝光S’亦將如此(當參考板5移動至相機8之視域中時))。 As is known from the above, the arrangement illustrated in Figures 1 and 3 employs an on-axis viewing configuration of the image recording device 8. However, for example, it is also conceivable to adopt an off-axis configuration ( One embodiment of the configuration as shown in FIG. Here, the image recording device (camera) 8 is independently directed to the substrate holder 9 and its viewing axis 7" is not coaxial with the optical axis 7 along which the laser beam L propagates. The camera 8 can be pointed so that it is viewed The shaft 7" intersects the optical axis 7 at or near the plane of the target surface 3; thus, the spot S will nominally be at or near the center of the field of view of the camera 8 (if the top surface of the reference plate 5 and the target surface 3 are at least This is roughly coplanar, as will the glow S' (when the reference plate 5 is moved into the field of view of the camera 8)).

此離軸設置可以與圖1及圖3之軸上組態幾乎相同的方式來使用,具有以下差異:-由於相機8之檢視角度,光點S與輝光S’將通常有些呈卵形/橢圓。舉例而言,可接著將在實施例2中所提及之「直徑」D選擇為所關注卵形/橢圓之橫向/最小寬度。 This off-axis setting can be used in much the same way as the on-axis configuration of Figures 1 and 3, with the following differences: - Due to the viewing angle of the camera 8, the spot S and the glow S' will typically be somewhat oval/elliptical . For example, the "diameter" D mentioned in Example 2 can then be selected as the lateral/minimum width of the oval/ellipse of interest.

-參考板5之頂部表面與目標表面3之間之一高度差現在將傾向於在光束L之平面(橫向)對準中發揮一更顯著作用。 - A height difference between the top surface of the reference plate 5 and the target surface 3 will now tend to play a more significant role in the planar (lateral) alignment of the beam L.

熟習此項技術者將理解此等問題,且能夠藉由執行適當(較小)數學校正來對其進行處理,例如,使用適當座標變換。 Those skilled in the art will understand these problems and can process them by performing appropriate (smaller) mathematical corrections, for example, using appropriate coordinate transformations.

實施例4Example 4

在以上實施例1中所論述之情形中,一單個雷射光束照射在基板1上。作為一替代方案,圖6圖解說明其中多個雷射光束照射在基板上之一情形。 In the case discussed in the above embodiment 1, a single laser beam is irradiated on the substrate 1. As an alternative, Figure 6 illustrates a situation in which multiple laser beams are illuminated on a substrate.

為達成圖6中所繪示之情景,可使用一光束劃分元件(諸如一衍射光學元件)來將一原始雷射L光束劃分成一雷射光束叢集{71至75},其在本情形中沿X方向(垂直於圖1之平面;平行於圖2之平面)彼此分離。應注意,出於清晰之目的,僅繪示每一光束{71至75}之光學軸,否則圖6將極混亂;然而,此(常見)簡化將不妨礙熟習此項技術者理解所繪示設置之結構及操作。 To achieve the scenario depicted in Figure 6, a beam splitting element, such as a diffractive optical element, can be used to divide an original laser L beam into a laser beam cluster {71 to 75}, which in this case The X directions (perpendicular to the plane of Figure 1; parallel to the plane of Figure 2) are separated from one another. It should be noted that for the sake of clarity, only the optical axes of each beam {71 to 75} are shown, otherwise Figure 6 will be extremely confusing; however, this (common) simplification will not prevent the person skilled in the art from understanding the depiction. The structure and operation of the setup.

如此處所繪示,光束{71至75}中之每一者聚焦至基板1之一體內 之一次表面焦點{F1至F5}(隱形切割),毗鄰光束{71至75}之焦點{F1至F5}位於該目標表面3下方不同深度{d1至d5}處。光束{71至75}中之每一者亦在表面3上產生一對應光點{S1至S5}。該等光點{S1至S5}沿著一線15安置,而該等焦點{F1至F5}沿著一線15安置。如此處所繪示,線15係以一向下傾斜角θ在線13下方傾斜之一直線;然而,此並非限制性的,且線15可改為係彎曲或波形的(舉例而言)。特定而言,以下值適用:▪沿X方向之光束叢集{71至75}之寬度係70μm。 As illustrated herein, each of the light beams {71 to 75} is focused into one of the substrates 1 The primary surface focus {F1 to F5} (invisible cut), the focus {F1 to F5} adjacent to the beam {71 to 75} is located at different depths {d1 to d5} below the target surface 3. Each of the beams {71 to 75} also produces a corresponding spot {S1 to S5} on the surface 3. The spots {S1 to S5} are placed along a line 15, and the points {F1 to F5} are placed along a line 15. As illustrated herein, the line 15 is inclined at a straight line below the line 13 at a downward angle θ; however, this is not limiting and the line 15 may instead be curved or waved (for example). In particular, the following values apply: The width of the beam cluster {71 to 75} in the X direction is 70 μm.

▪深度差d1至d5係40μm。 ▪ Depth difference d1 to d5 is 40 μm.

▪因此,傾斜角θ係反正切(40/70)=29.75°。 ▪ Therefore, the tilt angle θ is tangent (40/70) = 29.75°.

▪最淺焦點F5位於曝露表面3下面20μm處。 ▪ The shallowest focus F5 is located 20 μm below the exposed surface 3.

應注意,線15不需要相對於線13傾斜;在一替代設置中,線15及13可實質上平行(即,θ0)。亦應注意,線15可替代地位於表面3上而非位於其下面。 It should be noted that the line 15 need not be tilted relative to the line 13; in an alternative arrangement, the lines 15 and 13 may be substantially parallel (ie, θ 0). It should also be noted that the line 15 may alternatively be located on the surface 3 rather than below it.

可自(舉例而言)US 7,968,432收集關於此等光束叢集之更多資訊。 More information on such beam clusters can be gathered from, for example, US 7,968,432.

在本發明之背景下,光束叢集{71至75}中之光束中之(至少)一者可經選擇並用作執行整個光束叢集{71至75}之光束對準(及其他類型之光束特徵化)之一基礎。 In the context of the present invention, at least one of the beams in the beam cluster {71 to 75} can be selected and used to perform beam alignment of the entire beam cluster {71 to 75} (and other types of beam characterization). ) One of the foundations.

1‧‧‧實質上平坦半導體基板/基板 1‧‧‧Substantially flat semiconductor substrate/substrate

2‧‧‧劃刻道 2‧‧‧ scratching the road

2’‧‧‧虛線/劃刻道之中心軸/軸/特徵 2'‧‧‧Dash/axis/axis of the dotted line

2a‧‧‧劃刻道 2a‧‧‧ scribed

2b‧‧‧劃刻道 2b‧‧‧ scribed

3‧‧‧目標表面/表面 3‧‧‧ Target surface/surface

4‧‧‧雷射源 4‧‧‧Laser source

5‧‧‧相對小參考板/參考板 5‧‧‧ Relatively small reference board/reference board

6‧‧‧分束器 6‧‧‧beam splitter

7‧‧‧光學軸 7‧‧‧ Optical axis

7’‧‧‧共同軸/軸 7'‧‧‧Common shaft/axis

7”‧‧‧檢視軸(正常視線)/軸 7”‧‧‧View axis (normal line of sight)/axis

8‧‧‧影像記錄器件/器件/數位相機/影像記錄器件(相機)/相機 8‧‧‧Image Recording Device/Device/Digital Camera/Image Recording Device (Camera)/Camera

9‧‧‧可移動基板固持器(工作臺、夾盤)/基板固持器/固持器/基板夾持器 9‧‧‧Removable substrate holder (workbench, chuck) / substrate holder / holder / substrate holder

10‧‧‧濾光器 10‧‧‧ Filter

11‧‧‧投射(即,成像)系統/投射系統 11‧‧‧projection (ie imaging) system / projection system

12‧‧‧控制器 12‧‧‧ Controller

13‧‧‧線 13‧‧‧ line

14‧‧‧控制器/雷射控制器 14‧‧‧Controller/Laser Controller

15‧‧‧線 Line 15‧‧‧

16‧‧‧燈 16‧‧‧ lights

17‧‧‧台總成/控制器 17‧‧‧Taiwan Assembly/Controller

23‧‧‧積體器件/器件 23‧‧‧Integrated devices/devices

71-75‧‧‧雷射光束叢集/光束/光束叢集 71-75‧‧‧Laser beam cluster/beam/beam cluster

A‧‧‧裝置 A‧‧‧ device

A1‧‧‧軸 A1‧‧‧Axis

A2‧‧‧軸 A2‧‧‧Axis

d1‧‧‧深度/深度差 D1‧‧‧depth/depth difference

d3‧‧‧深度/深度差 D3‧‧‧depth/depth difference

d5‧‧‧深度/深度差 D5‧‧‧Depth/depth difference

F‧‧‧劃刻道特徵/項目/特定所關注特徵/特徵 F‧‧‧ scribed features/projects/specific features/features of interest

F1‧‧‧次表面焦點/焦點 F1‧‧‧ surface focus/focus

F3‧‧‧次表面焦點/焦點 F3‧‧‧ surface focus/focus

F5‧‧‧次表面焦點/焦點 F5‧‧‧ surface focus/focus

L‧‧‧(脈衝)雷射光束/雷射光束/光束 L‧‧‧(pulse) laser beam/laser beam/beam

P‧‧‧向量/項目 P‧‧‧Vector/Project

P’‧‧‧向量位置 P’‧‧·Vector position

R‧‧‧參考點 R‧‧‧ reference point

S‧‧‧光點 S‧‧‧ spot

S’‧‧‧局部化(區之)輝光/輝光/局部化輝光/小圓圈/項目/實質上圓形輝光/光點/輝光區 S’‧‧‧Localized (Zone) Glow/Glow/Localized Glow/Small Circle/Item/Substantial Round Glow/Light/Glow Zone

S1‧‧‧對應光點/光點 S1‧‧‧ corresponding spot/light spot

S3‧‧‧對應光點/光點 S3‧‧‧ corresponding spot/spot

S5‧‧‧對應光點/光點 S5‧‧‧ corresponding spot/light spot

V‧‧‧視域 V‧‧ Sight

x‧‧‧軸 X‧‧‧axis

+x‧‧‧方向 +x‧‧‧direction

-x‧‧‧方向 -x‧‧‧ directions

y‧‧‧軸 Y‧‧‧Axis

-△y‧‧‧量 -△y‧‧‧

z‧‧‧軸 Z‧‧‧Axis

θ‧‧‧向下傾斜角/傾斜角 Θ‧‧‧ downward tilt/tilt angle

現在將在例示性實施例及隨附示意性圖式之基礎上更詳細地闡釋本發明,該等隨附示意性圖式中:圖1呈現適合於執行根據本發明之一方法之一裝置之一特定實施例的部分之一端視圖(沿著一X軸)。 The invention will now be explained in more detail on the basis of exemplary embodiments and the accompanying schematic drawings in which: FIG. 1 presents a device suitable for performing one of the methods according to the invention. An end view (along an X axis) of a portion of a particular embodiment.

圖2呈現圖1之標的之部分(特定而言,圖1之一下部部分)之一平 面圖(沿著一Z軸)。 Figure 2 shows a portion of the subject matter of Figure 1 (specifically, a lower portion of Figure 1) Surface (along a Z axis).

圖3展示在根據本發明之一方法之一實施例之執行期間圖1之標的。 3 shows the subject matter of FIG. 1 during execution of an embodiment of a method in accordance with the present invention.

圖4A及圖4B圖解說明在根據本發明之一方法之一實施例之執行期間一影像記錄器件之一視域。 4A and 4B illustrate a field of view of an image recording device during execution of an embodiment of a method in accordance with the present invention.

圖5展示圖1中所繪示之裝置之一變體(具有一「離軸」影像記錄器件)。 Figure 5 shows a variation of the device illustrated in Figure 1 (having an "off-axis" image recording device).

圖6呈現根據採用一雷射光束叢集之本發明之一特定實施例之圖1之標的的部分(特定而言,圖1之一下部部分)之一放大立面圖(沿著一Y軸)。 Figure 6 presents an enlarged elevational view (along a Y-axis) of one of the elements of Figure 1 (specifically, a lower portion of Figure 1) according to a particular embodiment of the invention employing a laser beam cluster. .

在該等圖中,在相關處,使用對應元件符號來指示對應部件。 In the figures, corresponding elements are used to indicate corresponding parts.

1‧‧‧實質上平坦半導體基板/基板 1‧‧‧Substantially flat semiconductor substrate/substrate

2‧‧‧劃刻道 2‧‧‧ scratching the road

2’‧‧‧虛線/劃刻道之中心軸/軸/特徵 2'‧‧‧Dash/axis/axis of the dotted line

3‧‧‧目標表面/表面 3‧‧‧ Target surface/surface

4‧‧‧雷射源 4‧‧‧Laser source

5‧‧‧相對小參考板/參考板 5‧‧‧ Relatively small reference board/reference board

6‧‧‧分束器 6‧‧‧beam splitter

7‧‧‧光學軸 7‧‧‧ Optical axis

7’‧‧‧共同軸/軸 7'‧‧‧Common shaft/axis

7”‧‧‧檢視軸(正常視線)/軸 7”‧‧‧View axis (normal line of sight)/axis

8‧‧‧影像記錄器件/器件/數位相機/影像記錄器件(相機)/相機 8‧‧‧Image Recording Device/Device/Digital Camera/Image Recording Device (Camera)/Camera

9‧‧‧可移動基板固持器(工作臺、夾盤)/基板固持器/固持器/基板夾持器 9‧‧‧Removable substrate holder (workbench, chuck) / substrate holder / holder / substrate holder

10‧‧‧濾光器 10‧‧‧ Filter

11‧‧‧投射(即,成像)系統/投射系統 11‧‧‧projection (ie imaging) system / projection system

12‧‧‧控制器 12‧‧‧ Controller

14‧‧‧控制器/雷射控制器 14‧‧‧Controller/Laser Controller

16‧‧‧燈 16‧‧‧ lights

17‧‧‧台總成/控制器 17‧‧‧Taiwan Assembly/Controller

A‧‧‧裝置 A‧‧‧ device

F‧‧‧劃刻道特徵/項目/特定所關注特徵/特徵 F‧‧‧ scribed features/projects/specific features/features of interest

L‧‧‧(脈衝)雷射光束/雷射光束/光束 L‧‧‧(pulse) laser beam/laser beam/beam

P‧‧‧向量/項目 P‧‧‧Vector/Project

P’‧‧‧向量位置 P’‧‧·Vector position

R‧‧‧參考點 R‧‧‧ reference point

S’‧‧‧局部化(區之)輝光/輝光/局部化輝光/小圓圈/項目/實質上圓形輝光/光點/輝光區 S’‧‧‧Localized (Zone) Glow/Glow/Localized Glow/Small Circle/Item/Substantial Round Glow/Light/Glow Zone

V‧‧‧視域 V‧‧ Sight

x‧‧‧軸 X‧‧‧axis

y‧‧‧軸 Y‧‧‧Axis

z‧‧‧軸 Z‧‧‧Axis

Claims (13)

一種在用於劃刻一實質上平坦半導體基板之一雷射劃刻裝置中執行光束特徵化之方法,該裝置包含:一可移動基板固持器,該基板可夾持於該可移動基板固持器上,藉此該基板夾持於該固持器之一夾持區中以便呈現欲沿著至少一個劃刻道劃刻之一目標表面;一雷射源,其可用於沿著一光學軸朝向該目標表面引導至少一個雷射光束,該方法特徵在於以下步驟:提供可用於檢視並控制劃刻處理程序之一影像記錄器件,該器件具有一視域,該視域具有法向於其之一檢視軸;在該基板固持器上於該夾持區外部提供一參考板,該參考板包含回應於該雷射光束之輻照而產生受激輻射之一材料;定位該基板固持器使得該雷射光束照射在該參考板之一點上且激發該材料以在該照射點處產生一局部化輝光;使用該影像記錄器件來偵測該輝光之一物理參數。 A method of performing beam characterization in a laser scribe device for scribing a substantially planar semiconductor substrate, the device comprising: a movable substrate holder slidable to the movable substrate holder Thereby, the substrate is clamped in a clamping region of the holder to present a target surface to be scribed along at least one scribe line; a laser source operable to face the optical axis The target surface directs at least one laser beam, the method being characterized by the steps of providing an image recording device that can be used to view and control a scribing process, the device having a field of view having a normal view of one of the views a reference plate on the substrate holder outside the clamping region, the reference plate comprising a material that generates stimulated radiation in response to the irradiation of the laser beam; positioning the substrate holder such that the laser A beam of light is incident on a point of the reference plate and the material is excited to produce a localized glow at the point of illumination; the image recording device is used to detect a physical parameter of the glow. 如請求項1之方法,其中該物理參數係選自包含以下各項之群組:該輝光相對於該視域中之一參考點之一位置;該輝光之一直徑;該輝光之一積分強度;該輝光之一形狀,及其組合。 The method of claim 1, wherein the physical parameter is selected from the group consisting of: a position of the glow relative to one of the reference points in the field of view; a diameter of the glow; an integral intensity of the glow One of the glow shapes, and combinations thereof. 如請求項1或2之方法,其中使用來自該影像記錄器件之資料來計算該光學軸與該檢視軸之間之一位置偏差。 The method of claim 1 or 2, wherein the information from the image recording device is used to calculate a positional deviation between the optical axis and the viewing axis. 如請求項1或2之方法,其中使用來自該影像記錄器件之資料來計算該照射點與該雷射光束之最佳焦點之一位置之間之一軸向距離。 The method of claim 1 or 2, wherein the data from the image recording device is used to calculate an axial distance between the illumination point and a position of the best focus of the laser beam. 如請求項1或2之方法,其中該受激輻射係經由選自包含以下各項之群組之一機制產生:波長轉換、雙光子吸收、白熾光、螢光及其組合。 The method of claim 1 or 2, wherein the stimulated radiation is generated via a mechanism selected from the group consisting of: wavelength conversion, two-photon absorption, incandescent light, fluorescence, and combinations thereof. 如請求項3之方法,其包含以下額外步驟:在該基板固持器上提供一經夾持基板;定位該基板固持器以便將該基板之一劃刻道定位於該視域內;使用該影像記錄器件來偵測該劃刻道之一特徵相對於該參考點之一位置;應用該位置偏差以判定該光學軸相對於該特徵之一推斷位置。 The method of claim 3, comprising the additional step of: providing a clamped substrate on the substrate holder; positioning the substrate holder to position one of the substrates in the field of view; using the image recording The device detects a position of one of the scribe lanes relative to the one of the reference points; applying the positional deviation to determine that the optical axis infers a position relative to one of the features. 如請求項4之方法,其包含以下額外步驟:在該基板固持器上提供一經夾持基板;定位該基板固持器以便將該基板之一劃刻道定位於該視域內;應用該軸向距離以判定該雷射光束相對於該目標表面之一焦點位置。 The method of claim 4, comprising the additional step of: providing a clamped substrate on the substrate holder; positioning the substrate holder to position one of the substrates in the field of view; applying the axial direction The distance is used to determine a focus position of the laser beam relative to the target surface. 如請求項6之方法,其包含以下額外步驟:判定該參考板與該經夾持基板之間之法向於基板平面之一高度差;結合該位置偏差及該軸向距離中之至少一者使用該高度差來調整光束對準。 The method of claim 6, comprising the additional step of: determining a height difference between the reference plate and the clamped substrate at a plane of the substrate; combining at least one of the positional deviation and the axial distance This height difference is used to adjust the beam alignment. 如請求項7之方法,其包含以下額外步驟: 判定該參考板與該經夾持基板之間之法向於該基板平面之一高度差;結合該位置偏差及該軸向距離中之至少一者使用該高度差來調整該光束對準。 The method of claim 7, which includes the following additional steps: Determining a height difference between the reference plate and the clamped substrate at a plane of the substrate; combining the positional deviation and the axial distance uses the height difference to adjust the beam alignment. 如請求項1或2之方法,其中使用來自該影像記錄器件之資料來判定該輝光之一形狀。 The method of claim 1 or 2, wherein the material from the image recording device is used to determine a shape of the glow. 如請求項1或2之方法,其中:該雷射源產生一雷射光束叢集;該至少一個雷射光束係此叢集之一成員,且用作執行該整個叢集之光束對準之一基礎。 The method of claim 1 or 2, wherein: the laser source produces a cluster of laser beams; the at least one laser beam is a member of the cluster and serves as a basis for performing beam alignment of the entire cluster. 一種用於執行一實質上平坦半導體基板之雷射劃刻之裝置,該裝置包含:一基板固持器,其具有該基板可夾持於其中之一夾持區以便呈現欲沿著至少一個劃刻道劃刻之一目標表面;一雷射源,其用於沿著一光學軸朝向該目標表面引導至少一個雷射光束;用於實現該基板固持器與該雷射光束之間之相對運動之構件,其特徵在於該裝置進一步包含:一影像記錄器件,其可用於檢視並控制劃刻處理程序;一參考板,其在該基板固持器上於該夾持區外部,該參考板包含回應於該雷射光束之輻照而產生受激輻射之一材料,藉此在該雷射光束之一照射點處產生一局部化輝光;一控制器,其用於執行由該影像記錄器件產生之該輝光之一影像之分析,且自其導出該輝光之至少一個物理參數。 A device for performing laser scribing of a substantially planar semiconductor substrate, the device comprising: a substrate holder having the substrate clampable in one of the clamping regions for presenting along at least one scribe Channel marking a target surface; a laser source for guiding at least one laser beam along an optical axis toward the target surface; for achieving relative motion between the substrate holder and the laser beam A member, characterized in that the device further comprises: an image recording device operable to view and control the scribing process; a reference plate on the substrate holder external to the clamping region, the reference plate comprising Irradiating the laser beam to produce a material of the stimulated radiation, thereby generating a localized glow at an illumination point of the laser beam; a controller for performing the generation by the image recording device An analysis of one of the glow images and from which at least one physical parameter of the glow is derived. 如請求項12之裝置,其中該物理參數係選自包含以下各項之群 組:該輝光相對於該影像記錄器件之一視域中之一參考點之一位置;該輝光之一直徑;該輝光之一積分強度;該輝光之一形狀,及其組合。 The device of claim 12, wherein the physical parameter is selected from the group consisting of Group: a position of the glow relative to one of the reference points in one of the fields of view of the image recording device; a diameter of the glow; an integrated intensity of the glow; a shape of the glow, and combinations thereof.
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