TW201440200A - Light-emitting device - Google Patents

Abstract

This invention discloses a light-emitting device capable of being applied with an alternative current directly, comprising a submount; at least one electronic element located on the submount; at least one light-emitting diode array chips located on the submount; at least one bonding pad located on the submount, and a conductive trace on the submount, wherein the conductive trace is electrically connected with the electronic element, the light-emitting diode array chip, and bonding pad.

Description

Light-emitting element

The invention discloses a light-emitting element, in particular to a light-emitting element which comprises at least one electronic component and at least one light-emitting diode array wafer on a primary carrier and can be directly used for alternating current.

The principle of light-emitting diode (LED) is to use energy difference between the n-type semiconductor and the p-type semiconductor to release energy in the form of light. This principle of illumination is different from incandescent lamps. The principle of heat generation, so the light-emitting diode is called a cold light source. In addition, the light-emitting diode has the advantages of high durability, long life, light weight, low power consumption, etc., so the current lighting market has high hopes for the light-emitting diode, and it is gradually replaced as a new generation of lighting tools. Light source, and is used in various fields, such as traffic signs, backlight modules, street lighting, medical equipment, etc.

1 is a schematic view showing the structure of a light-emitting diode lighting element that can be used for an AC power source. As shown in FIG. 1, a light-emitting diode lighting element 100 that can be used for an AC power source includes a primary submount 10, a The LED array 12 on the sub-carrier 10 and the at least one pad 14 are electrically connected to the LED array 12, wherein the LED array 12 includes at least one substrate 120. And a plurality of light emitting diode units 122 on the substrate 120.

If the above-mentioned conventional light-emitting diode lighting element 100 can be used for an AC power source, Directly replacing the general lighting device, the light-emitting diode lighting element 100 must operate in a high voltage environment of 100 volts to 240 volts, and the light-emitting diode lighting element 100 that is in an active state for a long time is prone to the problem of excessive temperature. In the above-mentioned high-temperature, high-current (pressure) environment, electronic components tend to generate an electromigration effect, which is caused by temperature and electron wind multiplication effects. The movement of metal ions. In general, the higher the temperature, the more easily the electromigration of metal ions occurs. In the light-emitting diode element, the electron current diffuses from the electrode to the active region at a high temperature, and electrode materials such as Indium Tin Oxide (ITO) and silver are easily electromigrated. In addition, solder or fine metal bonds may also create voids due to electromigration effects, which in turn cause component breaks.

As can be seen from the above description, the high temperature and high current (voltage) working environment greatly reduces the reliability of the LED lighting elements that can be used for AC power.

The main object of the present invention is to provide a light-emitting element comprising at least a primary submount, at least one electronic component on the secondary carrier, and at least one light-emitting diode array wafer on the secondary carrier, wherein the at least one The LED array chip is electrically connected to the electronic component.

Another object of the present invention is to provide at least one bond pad on a sub-carrier, electrically connected to the above-mentioned electronic component and the LED array chip, and supplied by a pad and a high-voltage AC power source. The devices are connected to provide AC power to the light emitting elements.

A further object of the present invention is to provide a light emitting device, wherein the electronic component can be a passive component such as a rectifying unit, a resistor unit, a capacitor unit or an inductive unit to improve The efficiency of the light-emitting element.

The invention discloses a light-emitting element, wherein the light-emitting element has at least one light-emitting diode array wafer, and the light-emitting diode array wafer comprises a plurality of light-emitting diode units connected in series or in parallel.

The invention discloses a light-emitting element, wherein the light-emitting element has at least one light-emitting diode array wafer, and the light-emitting diode array wafer comprises a plurality of light-emitting diode units, and is arranged in a series closed loop.

The present invention provides a light-emitting element having at least one light-emitting diode array wafer, and the light-emitting diode array wafer includes a plurality of light-emitting diode units, and the plurality of light-emitting diode units are arranged in a plurality of series A closed loop in which any two adjacent closed loops have different tandem directions and the adjacent closed loop has a common portion.

Another aspect of the present invention discloses a light-emitting element comprising at least one primary carrier; at least one electronic component on the secondary carrier, at least one blue light-emitting diode array wafer, on the secondary carrier, at least one a red photodiode wafer on the sub-carrier and a conductive line on the sub-carrier, and respectively for the electronic component, the blue LED array wafer, and the The red photodiode wafer is described as being electrically connected.

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

100‧‧‧Lighting elements

10, 20, 30 ‧ ‧ carriers

12, 24, 32, 400, 500‧‧‧Light Emitter Array Wafers

14, 26, 38‧‧‧ solder pads

120, 40, 50‧‧‧ substrates

122, 42‧‧‧Lighting diode unit

200, 300‧‧‧Lighting elements

21‧‧‧reflective layer

22‧‧‧Electronic components

23‧‧‧wavelength conversion layer

25‧‧‧Package

28, 39‧‧‧ conductive lines

31‧‧‧Rectifying components

34‧‧‧resistance

36‧‧‧ Capacitance

44, 56, 56a, 56b‧‧‧ electrodes

46, 58‧‧‧ Electrical connection structure

52‧‧‧ epitaxial laminate

520‧‧‧First Conductive Semiconductor Layer

522‧‧‧Active layer

524‧‧‧Second conductive semiconductor layer

54‧‧‧diode unit

540, 540'‧‧‧Lighting diode unit

542, 542a, 542b, 542c, 542d‧‧‧ rectifying diode units

580‧‧‧Insulation

582‧‧‧metal layer

FIG. 1 is a schematic view showing the structure of a light-emitting diode lighting element which can be used for an AC power source.

2A is a schematic top view of the embodiment of the present invention.

FIG. 2B is a schematic side view showing the structure of the embodiment of the present invention.

2C is a schematic side view showing another embodiment of the present invention.

FIG. 3 is a schematic top view of another embodiment of the present invention.

4 is a schematic side view showing the structure of the light emitting diode array wafer of the present invention.

5A to 5D are schematic views showing a manufacturing process of a light emitting diode array wafer according to an embodiment of the present invention.

FIG. 6 is a schematic top view of a light emitting diode array wafer according to an embodiment of the invention.

7A and 7B are schematic diagrams showing the circuit of the light emitting diode array wafer in the embodiment of the present invention.

FIG. 8 is another schematic diagram of a circuit of a light emitting diode array wafer according to an embodiment of the present invention.

The present invention will be described with reference to the drawings, in which the same or the same reference numerals are used in the drawings or the description, and in the drawings, the shape or thickness of the elements may be enlarged or reduced. It is to be noted that elements not shown or described in the figures may be in a form known to those skilled in the art.

The present invention discloses a light emitting element. In order to make the description of the present invention more detailed and complete, please refer to the following description and cooperate with the diagrams of FIGS. 2A-8.

2A is a top view of the embodiment of the present invention, and FIG. 2B is a side view showing the structure of the embodiment of the present invention. As shown in FIGS. 2A and 2B, the light-emitting element 200 is shown. At least one primary submount 20, at least one electronic component 22 on the secondary carrier 20, a plurality of light-emitting array chips 24 on the secondary carrier 20, and at least one on the secondary carrier 20 a solder pad 26, and a conductive trace 28 on the sub-carrier 20 electrically connected to the electronic component 22, the LED array 24 and the pad 26 in series or in parallel; The two adjacent light-emitting diode arrays 24 have a spacing D therebetween, and the spacing D is greater than 10 μm; preferably greater than 100 μm; and the solder pads 26 are electrically connected to an AC power supply (not shown). The AC power supply device provides high-voltage AC power of 100V to 240V in general households to the above-mentioned light-emitting element 200.

The electronic component 22 described above may be a group of at least one selected from the group consisting of passive elements such as resistors, capacitors, and inductors.

2C is a schematic structural view of another embodiment of the present invention. As shown in FIG. 2C, the light-emitting element 200 of the present invention also includes a reflective layer 21 on the secondary carrier 20 for reflecting the LED array 24 of the light-emitting diode array. The light is emitted, and the sub-carrier 20 further has a bowl-shaped recessed structure 29 for accommodating the electronic component 22 or the LED array 24; wherein the light-emitting component 200 further includes an array of LEDs. The wavelength conversion layer 23 on the wafer 24 and a package adhesive 25 on the secondary carrier 20 and covering at least the light-emitting diode array wafer 24.

3 is a schematic top view of another embodiment of the present invention. As shown in FIG. 3, the light-emitting element 300 includes at least a primary carrier 30, a rectifying component 31 on the secondary carrier 30, and a plurality of sub-carriers 30. The LED array 32, at least one resistor 34 on the sub-carrier 30 in series with the LED array 32, and at least one capacitor 36 on the sub-carrier 30 in series with the LED array 32 and the resistor 34. At least one pad 38 on the sub-carrier 30, and a conductive line 39 on the sub-carrier 30 for using the rectifying element 31, The LED array 32, the capacitor 34, and the resistor 36 are electrically connected to the pad 38. The rectifying element 31 includes at least one diode having a low on-voltage and a high reverse bias. The rectifying circuit is configured to convert the sinusoidal alternating current (AC) provided by the alternating current power supply into a pulsed direct current (AC) by the rectifying element 31 for use by the light emitting element 300; wherein, the low turn-on voltage has a high reverse bias voltage The diode unit may be a Zener Diode or a Schottky Diode; the material is selected from a group consisting of a group III-V compound or a group IV element, such as gallium nitride (GaN). ) series materials, aluminum gallium indium phosphide (AlGaInP) series materials, or tantalum. Wherein, any two adjacent LED arrays 32 have a distance greater than 10 μm, preferably greater than 100 μm; in addition, the pads 38 are electrically connected to an AC power supply (not shown). The connection, wherein the above-mentioned AC power supply (not shown) is provided as a power source of a high-voltage alternating current of 100 V to 240 V in general households to the above-mentioned light-emitting element 300.

4 is a side view of the LED array of the above embodiment. As shown in FIG. 4, the LED array 400 includes a substrate 40 and a plurality of LED units on the substrate 40. (light-emitting diode unit) 42, at least two electrodes 44 on the substrate 40, and an electrical connection structure 46 for electrically connecting the plurality of LED units 42 and the electrodes 44 in a co-directional series or parallel manner; The connecting structure 46 may be a wire or a metal layer, and the electrode 44 is electrically connected to the conductive line on the sub-carrier of the light-emitting element of the present invention (not shown); The diode array wafer 400 can have a specific operating voltage of the LED array 400 itself by controlling the number and connection of the LED units 42. The light-emitting element of the present invention can meet the voltage conditions of 100V to 240V in general households, because the characteristics of the voltage of the light-emitting diode array wafer can be flexibly designed, and the plurality of light-emitting diode arrays 400 are connected in series.

Referring to Figures 2 to 4, for example, in the application of a 110 volt AC power system for a general illumination system, the plurality of LED arrays are a matrix of 2x2 arrays (as shown in Figure 3). The light emitting diode array 32 includes at least one light emitting layer of indium gallium nitride (InGaN) to emit blue light having a peak wavelength ranging from 440 to 480 nm (defined as a blue LED). The array wafer) and the at least one LED array wafer 32 comprise an illuminating layer of aluminum gallium indium phosphide (AlGaInP) to emit red light having a peak wavelength ranging from 600 to 650 nm (defined as red) Photodiode array wafer). A wavelength conversion layer (defined as a yellow fluorescent powder) that absorbs the emitted blue light wavelength and converts it into a yellow wavelength having a peak wavelength ranging from 570 to 595 nm, for example, a commercial YAG or TAG firefly, is applied to the blue LED array wafer. The light powder (as shown in Figure 2C) emits white light in a mixture. To achieve different color temperature requirements, the number of the blue and/or red diode array wafers, the blue and/or red diode array wafer area, or The number of diode units of the blue and/or red diode array chip is covered or covered with a phosphor powder of other colors, such as green phosphor, to meet the requirement of adjusting the color temperature. The examples are detailed in the following table, and the details of the second embodiment of the following table are as follows:

The second embodiment of the above table is a warm white light according to the present invention. The light-emitting element, wherein the ratio of the light-emitting power of all the blue-diode array wafers to the light-emitting power of all the red-light diode array wafers is about 3:1. The number of the light-emitting elements including the blue light and the red light-emitting diode array is, for example, three or one each. The number of light-emitting diode units (defined as blue-diode units) connected in series in a blue-diode array wafer is 8 units, and the light-emitting diode unit in series in a red-light diode array wafer (defined as red light two) The number of polar body units is 12 units, therefore, the ratio of all blue light diode units of the light-emitting element to all red light-emitting units is 24:12 or 2:1; and each blue light and red light diode The forward bias voltages of the cells are about 3 volts and 2 volts, respectively. Therefore, each of the blue and red LED array chips is a 24 volt high voltage DC array chip, and one of them is connected in series. The overall 2x2 matrix is a 96 volt load. When driving, the above-mentioned light-emitting elements emit a blue light to red light power ratio of about 3:1. The matrix is connected in series to a predetermined resistor and the aforementioned rectifying element having a bridge rectifier circuit to form a light-emitting element for a 110V AC power system. In an embodiment of the invention, the ratio of the luminous power of all of the blue LED array wafers to all of the red LED array wafers is between about 2 and 4, preferably between 2.6 and 3.4; or the illumination The ratio of the number of all blue and red diode units of the component is between 4/3 and 8/3, and the color temperature range is between 2000 and 5000K to form warm white light; preferably, the color temperature range is 2000. ~3500K warm white light. In another embodiment of the present invention, the red LED array wafer may be replaced by a plurality of non-array red photodiodes in series, and the plurality of non-array red dipoles The number of wafers in series with the body wafer is the same as the number of red diode units of the replaced red photodiode array wafer; wherein each of the non-array red photodiodes has only one The red diode unit has a forward bias value of about 2 volts.

5A to 5D are manufacturing processes of another LED array wafer Schematic; as shown in FIG. 5A, a substrate 50 is provided, and an epitaxial layer 52 is formed on the substrate 50 by organometallic chemical vapor deposition, wherein the epitaxial layer 52 comprises at least one from bottom to top. a first conductive semiconductor layer 520, an active layer 522, and a second conductive semiconductor layer 524, and the material of the epitaxial layer 52 is selected from the group consisting of aluminum (Al), gallium (Ga), and indium (In). A semiconductor material of nitrogen (N), phosphorus (P) or arsenic (As), such as a gallium nitride (GaN) series material or an aluminum gallium indium phosphide (AlGaInP) series material.

Subsequently, as shown in FIG. 5B, the epitaxial layer stack 52 is etched by a photolithography technique to define a plurality of trenches 53, thereby forming a plurality of diode units 54 on the substrate 50, wherein the diodes are The body unit 54 includes a light emitting diode unit 540/540' and a rectifying diode unit 542. In addition, the diode unit 54 can be directly grown on the substrate 50 in an epitaxial growth mode, or a double substrate transfer bonding method, after removing the original growth substrate 50, by an adhesive layer or directly In the pressurization/heating manner, the diode unit 54 is bonded to another substrate to replace the original growth substrate 50, for example, a high thermal conductivity substrate or a light transmissive substrate having a heat conductivity or transmittance better than the original growth substrate 50 to improve The heat dissipation or light extraction efficiency of the LED array wafer is removed, and the original growth substrate 50 is removed after bonding. Taking the above-mentioned red photodiode array wafer or non-array red photodiode wafer as an example, wherein the red photodiode unit is preferably joined by a metal, an oxide, an organic polymer, or the like. The adhesive layer of the material is bonded to another highly thermally conductive substrate or a light transmissive substrate.

Next, as shown in FIG. 5C, the above-described diode unit 54 is etched again by a photolithography technique to expose the first conductive semiconductor layer 520 of the diode unit 54 to a portion.

Finally, as shown in FIG. 5D, an electrode 56 is formed on the substrate for electrically connecting with a conductive line (not shown) on the secondary carrier previously described; and forming a plurality of electrical connections. The structure 58 electrically connects the dissimilar diode unit 54 and the electrode 56. In the embodiment, the electrical connection structure 58 includes an insulating layer 580 covering the sidewall of the diode unit 54 and a metal layer 582 at the insulating layer 580. on.

In the above-mentioned light-emitting diode unit 540, any of the light-emitting diode units 540 is electrically connected to the second conductive type semiconductor layer 520 and electrically connected to the second light-emitting diode unit 540'. The semiconductor layer 524 is electrically connected and arranged in a series of closed loops to form a light emitting diode array wafer 500 by the above steps.

FIG. 6 is a schematic top view of the LED array 500 in FIG. 5D. As shown in FIG. 6, the LED array 500 includes a substrate 50 and a plurality of diode units on the substrate 50. 54. Electrodes 56a/56b on substrate 50, and electrical connection structures 58 connecting the dissimilar diode units 54 and electrodes 56a/56b in series or in parallel.

The plurality of diode units 54 include a plurality of light emitting diode units 540 and a plurality of rectifying light emitting diode units 542a/542b/542c/542d, wherein the electrodes 56a are respectively rectified and illuminated by the electrical connection structure 58. The first conductive semiconductor layer (not shown) of the diode unit 542a and the second conductive semiconductor layer (not shown) of 542b are electrically connected; and the electrode 56b is electrically connected to the rectifying light by the electrical connection structure 58, respectively. The first conductive type semiconductor layer (not shown) of the diode unit 542c and the second conductive type semiconductor layer (not shown) of 542d form an electrical connection; further, the light emitting diode units 540 are arranged to form a closed connection. The loops, rectifying light-emitting diode units 542a/542b/542c/542d are respectively connected to different end points w/x/y/z in the closed loop to form a bridge loop.

7A and 7B are circuit diagrams of the above-mentioned LED array wafer, wherein the direction of the arrow is the direction of the current path when the current of the LED array is turned on, such as As shown in FIG. 7A, when a current flows from the electrode 56a into the LED array wafer 500, current flows through the rectifying diode unit 542a and the LED unit 540 in the closed loop portion (as indicated by the arrow). The path), the rectifying diode unit 542c, and leaving the LED array wafer 500 from the electrode 56b; as shown in FIG. 7B, when current flows from the 56b into the LED array wafer 500, the current will flow. The light-emitting diode unit 540 (the path indicated by the arrow), the rectified diode 542b, and the electrode 56a exit the light-emitting diode array wafer 500 through the rectifying diode 542d.

FIG. 8 is another schematic diagram of a circuit of a light-emitting diode array wafer according to an embodiment of the present invention. As shown in FIG. 8, the plurality of light-emitting diode units 82 of the light-emitting diode array wafer 800 are arranged in a plurality of series closed loops A. /B and a shared circuit C, wherein the electrical parallel direction of the adjacent closed loops is different. In this embodiment, the closed loop A is connected in a clockwise direction, and the closed loop B is connected in a counterclockwise direction. And the adjacent closed loop A and the closed loop B have at least one common loop C; in addition, the LED array 800 further includes a plurality of rectifying diode units 84, respectively, and the closed loop A/B phase The four different terminals are connected to form a bridge loop to provide rectification.

It is to be understood that the above-described embodiments of the present invention may be combined or substituted with each other as appropriate, and are not limited to the specific embodiments described. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any obvious modifications or variations of the present invention are possible without departing from the spirit and scope of the invention.

200‧‧‧Lighting elements

20‧‧‧ times carrier

22‧‧‧Electronic components

24‧‧‧Light Diode Array Wafer

26‧‧‧ solder pads

28‧‧‧Electrical circuit

Claims (1)

A light-emitting element for high-voltage alternating current, comprising at least: a primary submount; at least one electronic component on the secondary carrier; at least one blue light emitting diode array wafer on the secondary carrier, wherein the blue light The diode array chip includes a first substrate and a plurality of blue LED units formed on the first substrate; at least one red diode chip is disposed on the secondary carrier, wherein the red light diode The body wafer includes a second substrate and at least one red diode unit formed on the second substrate; and a conductive line on the secondary carrier, and respectively the electronic component and the blue diode array wafer And the red diode chip is electrically connected, wherein the plurality of blue diode units are arranged in at least one series closed loop, and the electronic components are respectively connected to different end points in the closed loop.