TW201440098A - Multi-layer ceramic capacitor with buffer layer - Google Patents

Abstract

The present invention provides a multi-layer ceramic capacitor with buffer layer, which comprises a stacked body and two outer electrode components respectively configured on both ends of the stacked body. Each of the outer electrode components comprises an electrode layer, a resin buffer layer, an electrode protection layer and an electrode conduction layer. In which, the resin buffer layer comprises a thermoset resin and a first conductive additive, and also a second conductive additive. Thus, by reducing the thickness of electrode protection layer encapsulated and formed on the surface of the resin buffer layer with electroplating, the present invention may provide excellent resistance to the external stress and excellent solder characteristics, so as to prevent the defects of capacitors from the damages caused by bearing external stress and from the firing or failure due to the differences of thermal expansion coefficients among each layer.

Description

Multilayer ceramic capacitor with buffer layer

The invention relates to a laminated ceramic capacitor, in particular to a structure with a resin buffer layer, which is adapted to the stress generated by the external environment or processing after the application kit, and avoids the appearance of the component being damaged or internally cracked. Loss of functionality or reliability.

Referring to FIG. 2, the conventional multilayer ceramic capacitor includes a stacked body 30 and an outer end electrode assembly 40 coated on both ends of the stacked body 30. The stacked body 30 is composed of a plurality of dielectric layers 31 and a plurality of internal electrode layers 32. Each of the adjacent inner electrode layers 32 is exposed at each end of the stacked body 30, and the outer end electrode assemblies 40 are respectively in contact with the corresponding inner electrode layer 32, and are respectively outward from the stacked body 30. An electrode layer 41, an electrode protection layer 42 and an electrode guiding layer 43 are provided, and a parallel circuit is formed by the contact between the electrode layer 41 and the internal electrode layer 32. The electrode protection layer 42 is coated on the electrode layer 41. With respect to the other side of the stack 30, the electrode layer 41 is prevented from being ablated during the subsequent soldering of the electrode guiding layer 43, and the electrode guiding layer 43 is coated on the electrode protective layer 42 in an electroplated manner. On the other side of the electrode layer 41, it is electrically connected to other electronic components on the substrate.

In the process of packaging the electronic component, the laminated ceramic capacitor is first mounted on the substrate, and other electronic components are mounted on the substrate. However, in the process of mounting other electronic components, the substrate is bent and deformed, and the laminated ceramic capacitor is subjected to external stress to cause the stacked body 30 to be broken, thereby damaging the internal electrode layer 32, or the external electrode assembly 40 and the stack. A split between the bodies 30 causes an open circuit, causing the product to catch fire or fail.

In order to avoid the above problem, as shown in Fig. 3, Taiwan Patent No. M381157 provides a laminated ceramic capacitor having a buffer layer to increase the ductility and elasticity of the outer electrode assembly 50, and to accommodate bending of the substrate to avoid breakage or flaws. . The outer electrode assembly 50 is provided with an electrode layer 51, a resin buffer layer 52, an electrode protection layer 53 and an electrode guiding layer 54 respectively from the direction of the stack 60; wherein the resin buffer layer 52 The laminated ceramic capacitor is disposed on an application kit as a connection medium between the electrode layer 51 and the electrode protective layer 53. The application kit may be made of an aluminum substrate, an epoxy glass fiber substrate (such as FR-4), or the like.

Since the resin buffer layer 52 is formed by curing a paste or a gel of a conductive or non-conductive thermosetting resin mixed conductive additive by appropriate heat treatment, the laminated ceramic capacitor can be made to have good resistance to external stress. Force, and has good soldering characteristics to solve the damage caused by the external stress caused by the capacitor, and also avoid the shortcomings of the product due to the difference in thermal expansion coefficient caused by ignition or failure of the product.

However, in this patent, when the electrode protective layer 53 and the electrode guiding layer 54 in the outer terminal electrode assembly 50 are applied by electroplating, since the electrical conductivity of the resin buffer layer 52 is higher than that of the electrode layer 41 of the conventional laminated ceramic capacitor. Poor, therefore, when the electrode protective layer 53 and the electrode guiding layer 54 are formed, the thickness of the electrode protective layer 53 and the electrode guiding layer 54 are required to be transmitted. The thickness of the electrode protective layer 42 and the electrode guiding layer 43 of the integrated ceramic capacitor is thick to avoid the problem of poor soldering characteristics, but the thicker electrode protective layer 53 and the electrode guiding layer 54 reverse the structure of the patent. For the buffering performance of stress, it is difficult to adapt to external stress such as substrate bending or temperature change, and it is easy to cause breakage or flaws.

Among them, the use of lowering the ratio of the thermosetting resin or changing the metal type to improve the buffering performance of the patented structure obtained by electroplating is a currently known feasible technique, but instead deteriorates the soldering characteristics of the capacitor.

Therefore, it is a way to solve the dilemma of the current technology.

In view of the above-mentioned prior art multilayer ceramic capacitor having a structure of a resin buffer layer, when the electrode protective layer and the electrode conductive layer in the outer electrode assembly are electroplated, the thickness of the electrode protective layer and the electrode conductive layer are compared. Thick, which causes the shortcomings of this structure to reduce the cushioning performance of stress.

SUMMARY OF THE INVENTION The object of the present invention is to provide a laminated ceramic capacitor having a buffer layer which can be provided with better conductivity without the need to change the type of the conductive additive of the resin buffer layer, thereby reducing the electrode protection of the outer electrode assembly. The layer and the electrode are connected to the thickness of the layer to accommodate external stress such as substrate bending or temperature change, thereby avoiding breakage or flaws.

In order to achieve the foregoing object, the technical means adopted by the present invention is to provide a laminated ceramic capacitor having a buffer layer, comprising: a stacked body which is alternately stacked by at least three dielectric layers and at least two internal electrode layers. Constructed, and each adjacent inner electrode layer is exposed to the stack And two outer end electrode assemblies respectively disposed at two ends of the stack, each outer end electrode assembly comprising an electrode layer, a resin buffer layer, an electrode protection layer and an electrode a conductive layer; the electrode layer is at least covered at an end of the stacked body, and is in contact with an inner electrode layer exposed at an opposite end of the stacked body; the resin buffer layer is coated on an outer surface of the electrode layer, and the a thermosetting resin, a first conductive additive and a second conductive additive, wherein the second conductive additive is a metal, the curing temperature of the thermosetting resin is higher than a melting point of the second conductive additive; and the electrode protective layer is overmolded And a surface of the resin buffer layer; the electrode conductive layer is overmolded on the outer surface of the electrode protection layer.

Preferably, the thermosetting resin is present in an amount of from 12 to 50% by weight (wt%) based on the total weight of the resin buffer layer.

Preferably, the first conductive additive is contained in an amount of from 50 to 95% by weight based on the total weight of the first conductive additive and the second conductive additive.

Preferably, the second conductive additive has a size between 0.1 micrometers (μm) and 100 micrometers (μm).

Preferably, the second conductive additive has a melting point between 100 and 300 °C.

Preferably, the resin buffer layer has a thickness of between 0.1 micrometers (μm) and 100 micrometers (μm).

Preferably, the thickness of the electrode protective layer is between 0.1 micrometers (μm) and 30 micrometers (μm).

Preferably, the thermosetting resin is a conductive resin, and the conductive resin comprises at least one selected from the group consisting of polyacetylenes, polythiophenes, polypyrroles, polyanilines, and polyaromatic ethylene. Thermosetting resin.

Alternatively, the thermosetting resin is a non-conductive resin, and the non-conductive resin contains at least one selected from the group consisting of epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyester resins, and hydrazines. A thermosetting resin of a group consisting of a resin and a polyurethane.

Preferably, the first additive is selected from the group consisting of metal powders, metal foils, metal fibers, carbon fibers, and carbon-based conductive additives; The metal foil and the metal fiber comprise at least one selected from the group consisting of nickel, silver, copper, palladium, mixtures thereof and alloys thereof; and carbon-based and carbon-based conductive additives At least one material selected from the group consisting of activated carbon, carbon fibers, and carbon nanotubes is included.

Preferably, the second conductive additive comprises at least one electrically conductive material selected from the group consisting of metal powders, metal foils, and metal fibers; wherein the metal powder, the metal foil, and the metal The fiber-like composition is selected from at least one selected from the group consisting of tin, antimony, lead, indium, mixtures thereof, and alloys thereof.

Preferably, the inner electrode layer is selected from the group consisting of powders of nickel, copper, silver, palladium, alloys, compounds, and combinations thereof.

Preferably, the dielectric layer is comprised of a ceramic material.

Preferably, the electrode layer is composed of glass and a metal powder of copper, silver or nickel or a mixture thereof.

Preferably, the electrode protection layer is composed of nickel.

Preferably, the electrode guiding layer is composed of tin.

In the present invention, since the thickness of the electrode protective layer of the outer electrode assembly can be reduced by adding the second additive to the resin buffer layer, the multilayer ceramic capacitor according to the present invention has better resistance to external stress and has good resistance. The soldering characteristics of the capacitor to solve the damage caused by the external stress caused by the capacitor, and also avoid the shortcomings of the product due to the difference in thermal expansion coefficient caused by ignition or failure of the product.

10‧‧‧Stack

11‧‧‧Dielectric layer

12‧‧‧Internal electrode layer

20‧‧‧External electrode assembly

21‧‧‧electrode layer

22‧‧‧ resin buffer layer

23‧‧‧Electrode protective layer

24‧‧‧Electrode conductive layer

30‧‧‧Stack

31‧‧‧Dielectric layer

32‧‧‧Internal electrode layer

40‧‧‧External electrode assembly

41‧‧‧Electrical layer

42‧‧‧electrode protective layer

43‧‧‧Electrode conductive layer

50‧‧‧External electrode assembly

51‧‧‧electrode layer

52‧‧‧ resin buffer layer

53‧‧‧electrode protective layer

54‧‧‧Electrode conductive layer

60‧‧‧Stack

1 is a partial side cross-sectional view showing a laminated ceramic capacitor having a buffer layer of the present invention.

2 is a partial side cross-sectional view showing a prior art multilayer ceramic capacitor.

3 is a partial side cross-sectional view of a prior art multilayer ceramic capacitor with a buffer layer.

Referring to FIG. 1, a preferred embodiment of the multilayer ceramic capacitor of the present invention includes a stacked body 10 and an outer terminal electrode assembly 20 disposed at both ends of the stacked body 10.

Referring to FIG. 1 , the stacked body 10 is formed by alternately stacking at least three dielectric layers 11 and at least two internal electrode layers 12 , and each adjacent internal electrode layer 12 is exposed to the stacked body 10 respectively. At both ends, the dielectric layer 11 is composed of a ceramic material, and the internal electrode layer 12 is in contact with the internal electrode layer 12 exposed at the opposite end of the stacked body 10, and the internal electrode layer 12 is The group of metal components is selected from the group consisting of nickel, nickel-containing alloys, nickel-containing compounds, and nickel-containing organic composite materials; or selected from copper, copper-containing alloys, copper-containing compounds, and organic composites containing copper. a group consisting of materials; or a group selected from the group consisting of palladium, palladium-containing alloys, palladium-containing compounds, and palladium-containing organic composite materials. Preferably, the inner electrode layer 12 is made of a paste in which ceramic powder and nickel metal powder are mixed. Preferably, the electrode layer 21 is composed of copper.

Referring to FIG. 1 , the outer electrode assembly 20 includes a four-layer structure including an electrode layer 21 , a resin buffer layer 22 , an electrode protection layer 23 , and an electrode guiding layer 24 .

Referring to FIG. 1 , the electrode layer 21 is at least covered at the end of the stacked body 10 and is in contact with the internal electrode layer 12 exposed at the opposite end of the stacked body 10 . The composition of the electrode layer 21 includes at least one. A metal selected from the group consisting of copper, silver, platinum, palladium, and gold; further, the electrode layer 21 is composed of glass and a metal powder of copper, silver, nickel, or a mixture thereof. .

Referring to FIG. 1 , the resin buffer layer 22 is coated on the outer surface of the electrode layer 21 and is composed of a thermosetting resin mixed with a first conductive additive and a second conductive additive. The thermosetting resin is a conductive resin or a non-conductive resin, preferably formed by printing or adhering, and has a thickness of 0.1 μm to 100 μm; the conductive resin is A thermosetting resin comprising at least one selected from the group consisting of polyacetylenes, polythiophenes, polypyrroles, polyanilines, and polyaromatic vinyls. The non-conductive resin comprises at least one selected from the group consisting of epoxy resins, phenolic resins, urea resins, melamine resins, a thermosetting resin composed of an unsaturated polyester resin, an anthraquinone resin, and a polyurethane; the first conductive additive is selected from the group consisting of metal powders, metal foils, metal fibers, carbon fibers, and a group of conductive materials of carbon form; wherein the metal powder, the metal foil, and the metal fiber comprise at least one selected from the group consisting of nickel, silver, copper, palladium, mixtures thereof, and alloys thereof. a substance; wherein the carbon fiber and the carbon form of the conductive material are selected from the group consisting of at least one of activated carbon, carbon fiber, and carbon nanotubes; the second conductive additive is a low melting point metal And comprising at least one selected from the group consisting of metal powders, metal foils, and metal fiber conductors; wherein the metal powder, the metal foil, and the metal fiber comprise at least one selected from the group consisting of tin, antimony, and lead. Further, the second conductive additive is characterized by a melting point in the range of 100 to 300 ° C, wherein a preferred second guide is used. The melting point of the additive ranges from 130 to 250 ° C; the size ranges from 0.1 μm to 100 μm, which is in accordance with the size of the outer electrode, and the preferred size is from 1.0 μm to 60 μm. (μm).

Preferably, the resin buffer layer 22 is composed of 12 to 50% by weight of a thermosetting resin, 25 to 83.6% by weight of the first conductive additive, and 4.4 to 63.0% by weight of the second conductive additive; The resin is made of an epoxy resin and a phenolic resin; the first conductive additive is a metal foil and is copper, and the second conductive additive is a metal powder and is a tin-bismuth alloy. Better yet, to Based on the sum of the weights of the first conductive additive and the second conductive additive, the content of the first conductive additive is between 50 and 95% by weight.

Referring to FIG. 1 , the electrode protection layer 23 is overmolded on the outer surface of the resin buffer layer 22 and has a thickness of 0.1 micrometer (μm) to 30 micrometers (μm), and an optimum thickness of 2 micrometers (μm). ~20 microns (μm). Preferably, the electrode protection layer 23 is selected from the group consisting of nickel, a nickel-containing alloy, a nickel-containing compound, and a nickel-containing organic composite material.

Referring to FIG. 1, the electrode guiding layer 24 is overmolded on the outer surface of the electrode protective layer 23, and has a thickness of 0.1 micrometer (μm) to 10 micrometers (μm), and an optimum thickness of 3 micrometers (μm). ) ~ 8 microns (μm). Preferably, the metal conducting layer is selected from the group consisting of tin, a tin-containing alloy, a tin-containing compound, and a tin-containing organic composite.

The following examples are intended to illustrate the invention, but are not intended to limit the invention in any way.

Embodiment 1

In this embodiment, a prior art laminated ceramic capacitor having a buffer layer as shown in FIG. 3 is separately prepared by using an electroplating method; and a multilayer ceramic capacitor of the prior art as shown in FIG. 2, the former resin buffer layer 52 Conductivity, electrical conductivity of the latter electrode layer 41, thickness of the electrode protective layers 42, 53 of both, and stress buffering performance of the two; wherein the stress buffering performance is represented by a bending test failure rate, and the former resin The buffer layer 52 is made of epoxy resin and copper (Cu). The above test results are shown in Table 1, Table 2 and Table 3, respectively. In Tables 1 to 3, the existing products refer to the prior art laminated ceramic capacitors with a buffer layer; the conventional products are A multilayer ceramic capacitor of the prior art.

According to the test results, the electrode protective layer 53 of the prior art laminated ceramic capacitor with a buffer layer is coated on the outer surface of the resin buffer layer 52 by electroplating because of its electrical conductivity compared with the electrode of the multilayer ceramic capacitor of the prior art. The layer 41 is inferior (as shown in Table 1). Therefore, when the electrode protective layer 53 of the former is formed by electroplating, the thickness of the electrode protective layer 53 is thicker than that of the electrode protective layer 42 of the latter (as shown in Table 2), resulting in cushioning performance of the former structure for stress. Although it is better than the latter (as shown in Table 3) and meets the specifications and is acceptable, there are still deficiencies, so that the product is still at risk of fire or failure.

Embodiment 2

In this embodiment, a multilayer ceramic capacitor having a buffer layer of the present invention as shown in FIG. 1 is separately produced by using an electroplating method; and a multilayer ceramic capacitor having a buffer layer as shown in FIG. The thickness (T) of the outer end electrode assemblies 20, 50, and the thickness (Ta) of the electrode layers 21, 51, the thickness (Tb) of the resin buffer layers 22, 52, and the thickness of the electrode protective layers 23, 53 (Tc) And the thickness (Td) of the electrode guiding layers 24, 54; wherein the thickness (T) of the outer electrode assembly 20, 50 is the thickness (Ta) of the electrode layers 21, 51, and the thickness of the resin buffer layers 22, 52 (Tb) The sum of the thickness (Tc) of the electrode protective layers 23, 53 and the thickness (Td) of the electrode guiding layers 24, 54. The above test results are shown in Table 4.

According to the test results, in terms of the thickness (T) of the outer end electrode assemblies 20, 50, the present invention is smaller than the prior art, and further, after comparison, the thickness (T) of the outer end electrode assemblies 20, 50 is known. The difference is derived from the thickness (Tc) of the electrode protective layers 23, 53 and the thickness (Td) of the electrode guiding layers 24, 54, that is, the thickness (Tc) of the electrode protective layer 23 of the present invention and the electrode guiding layer 24 ( The thickness of Td) is smaller than the thickness (Tc) of the conventional electrode protective layer 53 and the thickness (Td) of the electrode conductive layer 54.

Embodiment 3

In this embodiment, a multilayer ceramic capacitor having a buffer layer of the present invention as shown in FIG. 1 is separately produced by using an electroplating method; and a conventional multilayer ceramic capacitor as shown in FIG. 3, the conductivity and electrode protection of the two are compared. The thickness (Tc) of the layers 23, 53 and the stress buffering performance (bending test failure rate); the distribution ratio of the resin buffer layers 22, 52 of the two and the test results are shown in Table 5. Further, the test method of this example is the same as that of the first embodiment, and the ratio of the curable resin is adjusted at the same time to confirm the improvement of the characteristics of the present invention.

In Table 5, Experimental Examples #1 to #7 are the present invention, and Comparative Examples #1 to #3 are conventional multilayer ceramic capacitors.

Among them, the resin buffer layer 22 of the experimental examples #1 to #7, the thermosetting resin is an epoxy resin, the first conductive additive is a copper powder/copper sheet, and the second conductive additive is a tin-bismuth alloy powder. The resin buffer layer 22 of Comparative Examples #1 to #3 is similarly made of a thermosetting resin, and the conductive additive is copper powder and copper sheet.

As shown in Table 5, in Experimental Examples #1 to #5, the ratio of the second conductive additive was maintained while maintaining the thickness of the fixed resin buffer layer 22 of 70 to 90 μm and the ratio of the thermosetting resin. Decreasing, the conductivity will gradually increase, but after reaching a certain addition amount (Experimental Example #3), the conductivity of the second conductive additive (in this embodiment, tin-bismuth alloy powder) is higher than that of the first conductive additive (this embodiment) In the case of copper powder/copper sheet, it is low, resulting in a decrease in electrical conductivity. In the experimental examples #6 to #7, in order to reduce the amount of the curable resin, the electrical conductivity was significantly increased, but in the bending test, the defective product began to appear. Further, with respect to the electrical conductivity of Comparative Examples #1 to #3 and the thickness of the electrode protective layer 53, the electrical conductivity of the experimental examples #1 to #7 was significantly improved, and the electrode protective layer 23 having a small thickness was provided.

In addition, as shown in Table 5, according to the resin buffer layer 22 The difference in composition ratio was compared between Experimental Example #1 and Comparative Example #1, Experimental Example #6 and Comparative Example #3, and Experimental Example #7 and Comparative Example #2, the bending test failure rate and the electrode protective layer 23, The thickness of 53 shows that the bending test results of Experimental Examples #1, #6, and #7 are superior to the corresponding comparative examples, and the electrode protective layer 23 is thinner than the corresponding comparative example.

Embodiment 4

In this embodiment, a laminated ceramic capacitor having a buffer layer of the present invention as shown in FIG. 1 is produced by electroplating; according to the size of the second conductive additive of the resin buffer layer 22, it is divided into experimental examples #8~# 12. The test results are shown in Table 6. The test method of the embodiment is the same as that of the first embodiment, and the types of the thermosetting resin, the first conductive additive and the second conductive additive used in the resin buffer layer 22 of the embodiment are the same as those in the third embodiment. Example #1~#7 are the same.

As shown in Tables 5 and 6, in Experimental Examples #8 to #12, when the thickness of the fixed resin buffer layer 22 was 70 to 90 μm, and the ratio of the thermosetting resin, the first conductive additive, and the second conductive additive Under the condition, the electrical conductivity of the second conductive additive of different sizes (1~20μm) (the tin-bismuth alloy powder in this embodiment) is better than the comparative examples #1~#3 of the third embodiment, and the experimental example #8~#12 has a thin electrode protection layer 23, and thus achieves a good bending test result.

Embodiment 5

In this embodiment, a laminated ceramic capacitor having a buffer layer of the present invention as shown in FIG. 1 is produced by electroplating; the composition ratio and type of the fixed resin buffer layer 22 are heated according to the resin buffer layer 22 during the forming process. Different temperature points between the curing of the resin, divided into examples #13~#21, the conductivity of the resin buffer layer 22, the thickness of the electrode protective layer 23, and the stress buffering performance (bending test failure rate) were tested, and the test results and composition ratios are shown in Table 7. The test method of the present embodiment is the same as that of the first embodiment, and the types of the resin, the first conductive additive and the second conductive additive used in the resin buffer layer 22 of the present embodiment are the same as the experimental example #1 described above. ~#7 and #8~#12 are the same. Further, the thermosetting resin is an epoxy resin having a curing temperature of 260 C, and the second conductive additive is tin antimony alloy powder having a melting point of 139 C.

As shown in Table 7, in the experimental examples #13 to #16, the curing temperature of the thermosetting resin was not reached, and the value of the electric conductivity, the thickness of the electrode protective layer 23, and the bending test failure rate were not obtained. Although the temperature of the experimental example #17~#19 has not reached the curing temperature of the thermosetting resin, the electrical conductivity has reached the condition of electroplating, but in the bending test, since the thermosetting resin is not completely cured, the characteristics of the bending test are No significant improvement. #20~#21 reached the curing temperature of the thermosetting resin, so the failure rate of the bending test was significantly reduced.

Wherein, since the second conductive additive is a low melting point metal, the melting temperature is lower than the curing temperature of the thermosetting resin, and when the thermosetting resin is not completely cured, the second conductive additive begins to melt and can be turned on first. The conductive additive; thus, in addition to the densification of the first conductive additive in the conduction path, the first conductive additive is densified and turned on, and the second conduction path is increased, thereby increasing the conductivity.

As described above, the present invention improves the conductivity of the resin buffer layer 22 by adding a second additive to the resin buffer layer 22, thereby reducing the thickness of the electrode protective layer 23, thereby improving the buffering function of the laminated ceramic capacitor and solving the problem. The inner electrode layer 12 and the stacked body 10 are externally stressed The problem of causing a rupture and a short circuit makes the multilayer ceramic capacitor of the present invention excellent in resistance to external stress.

10‧‧‧Stack

11‧‧‧Dielectric layer

12‧‧‧Internal electrode layer

20‧‧‧External electrode assembly

21‧‧‧electrode layer

22‧‧‧ resin buffer layer

23‧‧‧Electrode protective layer

24‧‧‧Electrode conductive layer

Claims (16)

A multilayer ceramic capacitor with a buffer layer, comprising: a stacked body, wherein at least three dielectric layers are alternately stacked with at least two internal electrode layers, and adjacent adjacent internal electrode layers are respectively exposed to the stacked body And the two outer end electrode assemblies are respectively disposed at two ends of the stack, and the outer end electrode assemblies comprise an electrode layer, a resin buffer layer, an electrode protection layer and an electrode lead a layer of the electrode; the electrode layer is at least covered at an end of the stack, and is in contact with an inner electrode layer exposed at an opposite end of the stack; the resin buffer layer is coated on an outer surface of the electrode layer, and the a thermosetting resin, a first conductive additive and a second conductive additive, wherein the second conductive additive is a metal, and the curing temperature of the thermosetting resin is higher than a melting point of the second conductive additive; the electrode protective layer is overmolded The outer surface of the resin buffer layer; the electrode conductive layer is overmolded on the outer surface of the electrode protective layer. The multilayer ceramic capacitor having a buffer layer according to claim 1, wherein the thermosetting resin is contained in an amount of from 12 to 50% by weight (% by weight) based on the total mass of the resin buffer layer. The multilayer ceramic capacitor with a buffer layer according to claim 1, wherein the first conductive additive is based on a total weight of the first conductive additive and the second conductive additive, and the content of the first conductive additive is between 50 and 95 wt. %. The multilayer ceramic capacitor with a buffer layer according to claim 1, wherein the second conductive additive has a size of between 0.1 micrometer (μm) and 100 micrometers (μm). The multilayer ceramic capacitor with a buffer layer according to claim 1, wherein the second conductive additive has a melting point of between 100 ° C and 300 ° C. The multilayer ceramic capacitor with a buffer layer according to claim 1, wherein the resin buffer layer has a thickness of between 0.1 micrometer (μm) and 100 micrometers (μm). The multilayer ceramic capacitor with a buffer layer according to claim 1, wherein the electrode protective layer has a thickness of between 0.1 micrometer (μm) and 30 micrometers (μm). The multilayer ceramic capacitor with a buffer layer according to any one of claims 1 to 7, wherein the thermosetting resin is a conductive resin, and the conductive resin comprises at least one selected from the group consisting of polyacetylenes and polythiophenes. A thermosetting resin of a group consisting of polypyrroles, polyanilines, and polyaromatic ethylene. The multilayer ceramic capacitor with a buffer layer according to any one of claims 1 to 7, wherein the thermosetting resin is a non-conductive resin, and the non-conductive resin comprises at least one selected from the group consisting of epoxy resins and phenols. A thermosetting resin composed of a group of a resin, a urea resin, a melamine resin, an unsaturated polyester resin, a resin resin, and a polyurethane. The multilayer ceramic capacitor with a buffer layer according to any one of claims 1 to 7, wherein the first additive is selected from the group consisting of metal powders, metal foils, metal fibers, carbon fibers, and carbon. a group consisting of a class of conductive additives; wherein the metal powder, the metal foil, and the metal fiber comprise at least one selected from the group consisting of nickel, silver, copper, palladium, mixtures thereof, and alloys thereof. The substance in the group; wherein the carbon fiber and the carbon-based conductive additive comprise at least one selected from the group consisting of activated carbon, carbon fiber, and carbon nanotubes. The multilayer ceramic capacitor with a buffer layer according to any one of claims 1 to 7, wherein the second conductive additive comprises at least one selected from the group consisting of a metal powder, a metal foil, and a metal fiber. a substance in a group; wherein the metal powder, the metal foil, and the metal fiber composition comprise at least one selected from the group consisting of tin, antimony, lead, indium, mixtures thereof, and alloys thereof substance. The multilayer ceramic capacitor with a buffer layer according to any one of claims 1 to 7, wherein the internal electrode layer is selected from the group consisting of powders, alloys, compounds, and combinations thereof of nickel, copper, silver, and palladium. Group. The multilayer ceramic capacitor having a buffer layer according to any one of claims 1 to 7, wherein the dielectric layer is composed of a ceramic material. The multilayer ceramic capacitor having a buffer layer according to any one of claims 1 to 7, wherein the electrode layer is made of glass and a metal powder of copper, silver or nickel or a mixture thereof. The multilayer ceramic capacitor having a buffer layer according to any one of claims 1 to 7, wherein the electrode protective layer is composed of nickel. The multilayer ceramic capacitor having a buffer layer according to any one of claims 1 to 7, wherein the electrode conductive layer is composed of tin.