TW201439367A - Cvd device and method for cleaning a processing chamber of a cvd device - Google Patents

Abstract

The invention first relates to a device and a method for depositing semiconductor layers, in particular III - V semiconductor layers, comprising a processing chamber (2) which is arranged in a reactor housing (1) and into which a gas supply line (3) opens, a process gas being introducible into the processing chamber (2) together with a carrier gas through said gas supply line. The device comprises a first temperature control device (4) with which the operating temperature of the processing chamber (2) can be stabilized to a processing temperature at which a reaction of the process gas takes place, wherein at least gaseous reaction products are formed during the reaction. The processing chamber (2) is connected to a gas discharge line (5) with a cooling trap (6) and a filter device (7). The aim of the invention is to increase the efficiency of an exhaust gas system in a device of the generic type. This is achieved in that the filter device (7) is arranged upstream of the cooling trap (6). The invention further relates to a method for cleaning such a processing chamber.

Description

CVD device and CVD device processing chamber purification method

The invention relates to a device for depositing a semiconductor layer, in particular a three-five main semiconductor layer, comprising a processing chamber disposed in a reactor housing and a first temperature regulating device, an intake pipe opening into the processing chamber and Introducing a process gas along with the carrier gas into the processing chamber, the first temperature regulating device can stabilize the operating temperature of the processing chamber at a processing temperature, the processing gas reacts at the processing temperature, and at least forms during the reaction A gaseous reaction product, wherein the processing chamber is connected to the cold trap and the filtering device through an exhaust pipe.

The invention further relates to a method of purifying a processing chamber of a reactor housing and a method of depositing a semiconductor layer, in particular a three-five main semiconductor layer, in a processing chamber of the reactor housing, wherein the passage through the processing chamber The gas pipe introduces a processing gas into the processing chamber, and the processing chamber is heated to a processing temperature by a first heating device, and the processing gas reacts at the processing temperature, and gaseous and non-gaseous reaction products are formed during the reaction, wherein the gas is used The exhaust pipe sends the gaseous and non-gaseous reaction products to a cold trap and a filtration device, wherein the cold trap has a temperature at which the gaseous reaction products condense and the filter device filters out the carrier gas stream Non-gaseous reaction products.

When the semiconductor layer is deposited by the MOCVD method, the third main group element and the fifth main group element are introduced into the processing chamber in the form of an organometallic compound and a hydride, respectively. The process gases are provided in a gas mixture system and are fed to the process chamber of the reactor housing through a gas feed pipe by a carrier gas. The process gases enter the process chamber via an air intake mechanism. Processing room has A susceptor on which a plurality of semiconductor substrates to be coated are laid flat. The susceptor is heated by the first heating means to a deposition temperature at which the process gas is primarily decomposed by pyrolysis. During this process, a semiconductor layer is grown on the surface of the substrate. Other reactions occur within the processing chamber and form gaseous and non-gaseous reaction products. The reaction products are carried out of the processing chamber by a carrier gas stream through an exhaust pipe. In the prior art, this exhaust gas is then introduced into the cold trap where the gaseous exhaust component condenses. Downstream of the cold trap is provided a mechanical filter, for example in the form of a paper filter. This filter device filters suspended matter from the exhaust.

A description of the filter unit on the CVD reactor is found in US 6,107,198, US 7,871,587, US 4,608,063, and EP 0 529 982 B1. A description of the process chamber purification process can be found in DE 10 2011 056 538.8, which is not disclosed in advance. A description of a method for depositing a semiconductor layer by MOCVD techniques is found in DE 10 2011 002 146 A1.

In the semiconductor industry, the purification of coating devices for manufacturing LEDs is becoming more and more important. Exhaust systems are especially important when cleaning the processing chamber of such coating equipment in situ. In particular, for example, a nitride process in which trimethylgallium and ammonia are introduced into a processing chamber to produce a gallium nitride layer, the main problem is to fill the filter in the deposited product. This will not be expected to increase maintenance costs.

In view of this, it is an object of the present invention to improve the efficiency of the exhaust system of the same type of apparatus and to provide a method of depositing a semiconductor layer with higher efficiency and purifying the process chamber and/or exhaust system.

This object is achieved by the invention defined in the scope of the patent application.

First and mainly, it is proposed that the filtering device is arranged upstream of the cold trap.

The filter unit can be operated at room temperature or can be operated at temperatures above room temperature. The deposition process or purification process inside the processing chamber is carried out at a temperature of several hundred ° C Row. Therefore, the exhaust gas leaving the reactor casing through the exhaust pipe has a temperature exceeding room temperature. The exhaust enters the filter unit before cooling. This is particularly important in the case where the partial pressure of the gaseous exhaust gas leaving the process chamber or leaving the reactor housing is such that no condensation forms at room temperature, at least at the operating temperature. product.

According to a further aspect of the invention, the filter device is provided with a second temperature control device. The second temperature regulating device can cause the filter device to reach such a temperature or operate at a temperature at which the gaseous exhaust gas component which would otherwise condense at room temperature does not condense. The connecting tube between the reactor housing and the filter device can be provided with a third temperature regulating device, whereby the connecting tube can be stabilized at a temperature, and the gaseous reaction product does not condense at this temperature. In a preferred embodiment, a throttle valve is provided downstream of the cold trap, and the total pressure in the processing chamber can be adjusted by the throttle valve. In order to be able to adjust the total pressure below atmospheric pressure, in particular the pressure in the order of millibars, a vacuum pump is arranged behind the throttle valve. Thereby, the connecting pipe between the process chamber or the reactor housing and the filter device and the filter device itself are maintained at a stable temperature which is higher than the condensation temperature of the exhaust gas component. The purification process may use a chloride or a halide which combines with a parasitic coating of the processing chamber to form gallium chloride or the like. For example, Cl ₂ or HCl can be used as the purge gas. The exhaust system of the present invention has the advantage of increasing the efficiency of the deposition process and the purification process. By tempering the filter, it is also possible to remove deposits accumulated in the filter in a purification step. For this purpose, it is necessary to direct the purge gas, in particular Cl ₂ , through the filter when the filter device is at a correspondingly high temperature.

When performing an MOCVD process using, for example, trimethylindium and ammonia as a processing gas, not only GaN is deposited on a substrate that is flat on the susceptor of the processing chamber. Layers containing gallium and nitrogen are also deposited elsewhere in the processing chamber. Such parasitic coatings on the walls of the treatment chamber must be removed from time to time, in particular after each coating step. To this end, a dry etching method is used to introduce an etching gas into the processing chamber. The etching gas enters the processing chamber along with the carrier gas, which may be hydrogen, nitrogen or a rare gas. For example, if chlorine is used as the etching gas, volatile gallium chloride, GaCl ₃ , Ga ₂ Cl ₆ , GaCl, GaCl ₂ , Ga ₂ Cl ₄ will be formed on the wall of the treatment chamber at a correspondingly high processing temperature. . The gaseous reaction product is carried out of the processing chamber and reaches the filtration unit via an exhaust pipe. The filtering device is stabilized at a temperature by the temperature regulating device, and the reaction product, that is, the gallium chloride compound, does not condense at this temperature. The temperature regulating device can be a heating device or a cooling device. Preferably, the temperature regulating device consists of a casing enclosing the casing of the filtering device and flushed by a temperature regulating liquid. The tempering liquid may be water used to maintain the filtration device at a temperature of, for example, 90 °C.

Further in accordance with a preferred embodiment of the method, the etching gas is introduced into the processing chamber such that a portion of the etching gas passes through the processing chamber to remove deposits from the filtering device. Trimethylgallium and ammonia are introduced into the processing chamber in a deposition process that is performed prior to the purification step. Both the gaseous reaction product and the non-gaseous reaction product are formed in the reaction occurring in the treatment chamber. The gaseous and non-gaseous reaction products are carried by the carrier gas into the filtration device via the exhaust pipe. The non-gaseous, in particular solid, reaction product remains on the filter medium, which is a porous material. Since the filtration unit is tempered, the gaseous reaction product can pass through the filter. It condenses in a cold trap disposed in the flow direction behind the filter device. During the purification process, the filter is also purified under the action of an etching gas. The solid reaction product formed in the deposition process, which in turn accumulates on the filter medium, is converted to a gaseous compound during the purification process. For example, chlorine is used to convert a gallium-containing compound to a volatile gallium chloride compound. The volatile reaction product is clearly condensed in the cold trap.

Embodiments of the invention are described below in connection with the drawings.

1‧‧‧Reactor housing

2‧‧‧Processing room

3‧‧‧Intake pipe

4‧‧‧temperature control device

5‧‧‧Exhaust pipe

5'‧‧‧ entrance

5"‧‧‧Export

6‧‧‧ Cold trap

7‧‧‧Filter device

8‧‧‧temperature control device

8'‧‧‧ delivery tube

8"‧‧‧ output

9‧‧‧temperature control device

10‧‧‧Vacuum pump

11‧‧‧ throttle valve

12‧‧‧ throttle valve tongue

13‧‧‧temperature control device

13'‧‧‧ Entrance

13"‧‧‧Export

14‧‧‧Air intake mechanism

15‧‧‧Exhaust mechanism

16‧‧‧Filter media

17‧‧‧Base

18‧‧‧Cooling coil

T _A ‧‧‧temperature

T _K ‧‧‧critical temperature

T _B ‧‧‧temperature

1 is a schematic structural view of a CVD apparatus including an exhaust gas treatment device.

Figure 2 is a vapor pressure curve of the reaction product (GaCl ₃ ).

Figure 1 relates to the main components of a CVD reactor. The process gas enters the reactor housing 1 via a gas line 3 from a gas mixture system, not shown, along with the carrier gas. The reactor housing 1 is internally provided with an air intake mechanism 14 having a plurality of air outlets directed to the processing chamber 2. The intake mechanism 14 is supplied with air from the intake pipe 3. The vent holes not shown here are directed to the processing chamber 2. The bottom of the processing chamber 2 is formed by a susceptor 17 on which one or more substrates to be coated are disposed.

The symbol 15 indicates an air outlet mechanism for collecting the carrier gas introduced into the processing chamber 2, the unused processing gas, and the reaction product. The air outlet mechanism 15 is connected to the cold trap 6 through the exhaust pipe 5.

A temperature control device 4 is provided below the base 17. The temperature regulating device is a heating device such as a radio frequency heating device, a radiant heating device or a resistance heating device for heating the entire wall of the susceptor 17 or the processing chamber 2 to an elevated temperature.

The exhaust pipe 5 is a pipe member which is surrounded by an envelope with a chamber 9 through which a temperature regulating liquid can pass. The chamber 9 surrounds the tube of the exhaust pipe 5 in the form of a cooling jacket and has an inlet 5' and an outlet 5" for the temperature-adjusting medium to enter and exit. Water having a temperature of 90 ° C can be used as the temperature-regulating medium.

The filter device 7 is disposed above the cold trap 6 along the flow direction indicated by the arrows in Fig. 1 and has a filter cartridge inside, the filter cartridge having a filter medium 16 composed of a porous material. The exhaust gas carried by the exhaust pipe 5 passes through the filter medium 16, wherein the solids contained in the exhaust gas remain in the filter medium.

The housing of the filter device 7 is provided, for example, with a jacket 8 which can be passed through a temperature control agent. The chamber of the envelope 8 has a delivery tube 8' through which the temperature-regulating medium (which is water) can flow into the chamber 8. The tempering medium can exit the chamber via the output 8". Alternatively, The temperature regulating means can also be a resistance heating device, such as a heat jacket, or a conventional electric heating device having a corresponding adjustment function.

The cold trap 6 has a housing which also has a temperature control device. In this case, the temperature control device can also be embodied as an envelope 13 having a chamber through which the temperature control medium can flow into the chamber via the inlet 13 ′ and exit the chamber via the outlet 13 . A coolant, such as water doped with ethylene glycol, whereby the cold trap 6 can be maintained at a temperature of minus 5 C. The gaseous reaction product can be condensed in the cold trap 6. A cooling plate can also be placed in the cold trap 6. The cooling coils are spiral distribution tubes that pass through a coolant. A plurality of nested coils can be provided. Figure 1 shows the nested coils with reference numeral 18.

Downstream of the cold trap 6, a throttle valve 11 comprising a throttle valve 12 is provided, with which the total pressure inside the process chamber 2 can be adjusted.

A vacuum pump 10 is provided downstream of the throttle valve 11.

A coating process is carried out in the processing chamber 2 of the reactor housing. In this process, a three-five main semiconductor layer is coated on the semiconductor substrate provided on the susceptor 17. The process gas is introduced into the process chamber 2 through the intake pipe 3 and the intake mechanism 14 by the carrier gas. The process gases react with each other in the process chamber and react with the surface of the substrate to deposit, for example, a three-five main semiconductor layer on the surface of the substrate. Specifically, the intake mechanism 14 introduces trimethylgallium and NH ₃ together with hydrogen as a carrier gas into the processing chamber 2. A GaN layer is deposited on the substrate there. After the production process, that is, the deposition process, is completed, the substrate is removed from the process chamber 2 of the reactor housing 1. The coating formed in the wall portion of the processing chamber 2 during the deposition process is specifically gallium-containing and removed by dry chemical methods. To this end, an etching gas is introduced into the processing chamber 2 as a processing gas through the intake pipe 3. This treatment gas is preferably Cl ₂ . Cl ₂ was introduced into the reactor together with nitrogen. GaCl ₃ and other gallium chloride compounds are formed at elevated temperatures inside the processing chamber 2.

The carrier gas transports the formed GaCl ₃ away from the processing chamber 2 above its condensing temperature, passes through the tempered exhaust pipe 5, and enters the tempered filtering device 7. During this transport, no GaCl _{3 is} condensed on the surface of the tube of the exhaust pipe 5 and the filter medium 16 of the filter unit 7. To ensure this, the exhaust pipe 5 and the filter unit 7 are maintained at a temperature T _A at which the vapor pressure of the compound is greater than its partial pressure in the gas mixture.

Figure 2 shows the vapor pressure curve of GaCl ₃ . T _K refers to a critical temperature at which the gaseous reaction product (especially GaCl ₃ ) condenses at a partial pressure which it leaves when leaving the processing chamber 2. The operating temperature T _{A of the} filter device 7 is higher than the critical temperature T _K .

A chemical reaction takes place inside the filtration device 7, during which the etching gas reacts with the solid residue on the filter medium 16. The gallium-containing filter compound, for example, converted into a gaseous gallium chloride compound, is sent to the cold trap 6 along with the carrier gas.

The filter media 16 is a porous filter such as a paper filter or the like. The task of the filter media 16 is to filter out particles formed during the coating process or purification process from the carrier gas stream. However, such solid residues are preferably also decomposed during the purification process, thereby extending the useful life of the filter media 16.

The temperature regulating devices 8, 9 of the filter 7 and the exhaust pipe 5 are constituted by an additional wall portion surrounding the original casing. The stabilizing liquid is sent into a gap between the wall portion of the casing and the additional wall portion, and the stabilizing liquid may be water, oil, fluorenone or the like. It is preferable to use the same stabilizing liquid to stabilize the temperature of the exhaust pipe 5 and the filtering device 7, in which case the two chambers of the temperature regulating devices 8, 9 can be connected to each other. As an alternative, it is also possible in particular to configure the filter device 7 with a heating device that is adjusted to a nominal temperature T _A .

The cold trap 6 is maintained at a temperature T _B which is lower than the condensing temperature T _K . This temperature can be minus 5 °C. The purification capacity of the cold trap 6 is designed such that the residual critical partial pressure of the purified gas is so low that no condensation is formed in the subsequent piping and in particular in the throttle valve 11 or the pump 10 at room temperature.

However, an additional heating device can be provided for both the pump 10 and the throttle valve so that the wall exposed to the exhaust gas reaches a temperature at which the reaction product does not condense.

All of the features disclosed (ie, themselves) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the file are also included in the patent application scope of the present application. The sub-items illustrate the features of the prior art improvements of the prior art using optional side-by-side wording, the main purpose of which is to make a divisional application on the basis of the claims.

1‧‧‧Reactor housing

2‧‧‧Processing room

3‧‧‧Intake pipe

4‧‧‧temperature control device

5‧‧‧Exhaust pipe

5'‧‧‧ entrance

5"‧‧‧Export

6‧‧‧ Cold trap

7‧‧‧Filter device

8‧‧‧temperature control device

8'‧‧‧ delivery tube

8"‧‧‧ output

9‧‧‧temperature control device

10‧‧‧Vacuum pump

11‧‧‧ throttle valve

12‧‧‧ throttle valve tongue

13‧‧‧temperature control device

13'‧‧‧ Entrance

13"‧‧‧Export

14‧‧‧Air intake mechanism

15‧‧‧Exhaust mechanism

16‧‧‧Filter media

17‧‧‧Base

18‧‧‧Cooling coil

Claims (10)

A device for depositing a semiconductor layer, in particular a three-five main semiconductor layer, comprising a processing chamber (2) disposed in the reactor housing (1) and a first temperature regulating device (4), an air inlet tube ( 3) passing into the processing chamber and introducing the processing gas together with the carrier gas into the processing chamber (2), the first temperature regulating device (4) can stabilize the operating temperature of the processing chamber (2) at the processing temperature, The processing gas reacts at the processing temperature, during which at least a gaseous reaction product is formed, wherein the processing chamber (2) is connected to the cold trap (6) and the filtering device (7) through the exhaust pipe (5). It is characterized in that the filtering device (7) is arranged upstream of the cold trap (6). The apparatus of claim 1, wherein the temperature of the filtering device (7) can be stabilized by a second temperature regulating device (8). The apparatus of claim 1, wherein the exhaust pipe has a pipe through which the at least gaseous reaction product is transported from the processing chamber (2) to the filtering device (7) by using a carrier gas. The third temperature regulating device (9) stabilizes the temperature of the pipe. The apparatus of claim 1, wherein there is a vacuum pump (10) disposed downstream of the cold trap (6). The device of claim 4, wherein there is a throttle valve (11) disposed between the cold trap (6) and the pump (10), the throttle valve is used to adjust the processing chamber ( 2) Internal gas pressure. A method of purifying a processing chamber of a reactor housing or depositing a semiconductor layer, in particular a three-five main semiconductor layer, in the processing chamber (2), wherein the processing gas is supplied through an intake pipe (3) that is introduced into the processing chamber The carrier gas is introduced into the processing chamber (2) together, and the processing chamber (2) is tempered to a processing temperature by a first temperature regulating device (4), and the processing gas reacts at the processing temperature, at least during the reaction. Forming a gaseous reaction product in which exhaust gas is utilized The tube (5) sends the at least gaseous reaction product to the cold trap (6) and the filtering device (7), wherein the cold trap (6) has a temperature at which the gaseous reaction products condense and the filtering device (7) filtering out possible non-gaseous reaction products from the carrier gas stream, characterized in that the filtration device (7) disposed upstream of the cold trap (6) is maintained at a temperature, and the gaseous reaction products are Does not condense at this temperature. The method of claim 6, wherein the hydride and the organometallic component are used as a processing gas to deposit the semiconductor layers. The method of claim 7, wherein the treatment chamber (2) is purified using chloride, chlorine or a halide. The method of claim 8, wherein the partial pressure of the gaseous reaction product is selected such that the gaseous reaction product leaves the reactor shell (1) without forming a condensation product at room temperature. The method of claim 9, wherein the method of depositing the semiconductor layer is MOCVD.