TW201436652A - Plasma treatment device - Google Patents

Abstract

Disclosed is a plasma treatment device in which power loss in the power supply line and the matching unit can be reduced. The plasma treatment device (100) is provided with: a plurality of plasma processors (3) a matching unit (4) for performing impedance matching between the plasma load of the plurality of plasma processors (3) and a high-frequency power source unit (2) and a power supply unit (5) for supplying, to the plurality of plasma processors (3), high-frequency power impedance-matched by the matching unit (4). The power supply unit (5) has an inductive coupler (6) for supplying high-frequency power using inductive coupling to each of the plurality of plasma processors (3). The inductive coupler (6) has a linear primary-side power supply rod (7) to which high-frequency power is supplied through the output of the matching unit (4) from the high-frequency power source unit (2), and a plurality of secondary-side coils (8) for generating an induced electromotive force by a high-frequency variable magnetic flux generated around the primary-side power supply rod (7) and supplying the induced current generated by the induced electromotive force to each of the plurality of plasma processors (3).

Description

Plasma processing device

This invention relates to a plasma processing apparatus.

In a plasma processing apparatus having a plurality of plasma processing units, when a plurality of plasma processing units are applied with high frequency electric power for plasma excitation, a plurality of plasma processing units are connected in parallel to one or a plurality of high frequency power sources. . For example, Patent Document 1 describes a plasma processing apparatus in which a plurality of plasma processing units are connected in parallel to one high-frequency power source.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Registered Utility New Case No. 3010443

However, connecting a plurality of plasma processing units in parallel to one or a plurality of high frequency power sources causes a decrease in impedance of the plasma processing unit. For example, when the impedance Z of one of the plasma processing units is set to "Z=R+iX", the combined impedance Ztotal when N units are connected in parallel is "Ztotal=R/N+iX/N".

On the other hand, the high-frequency power P of the high-frequency power source is "P = RI ² ". Therefore, when the high-frequency power P is the same, the resistance component R becomes small, and the current I becomes large.

As described above, when a plurality of plasma processing units are connected in parallel to one or a plurality of high-frequency power sources, the resistance component R becomes small and the current I becomes large, and power loss in the power supply line or the matching unit may increase.

Further, since the current I is increased, the number of plasma processing units that can be connected in parallel to one high-frequency power source is also limited. Therefore, when it is desired to increase the number of plasma processing units, there are cases where a large number of expensive high-frequency power sources have to be prepared, and the manufacturing cost of the plasma processing apparatus cannot be reduced.

The invention provides a plasma processing apparatus that reduces power loss in a power supply line or a matcher.

Further, the invention provides a plasma processing apparatus capable of efficiently distributing power to a plurality of plasma processing units in a plasma processing apparatus capable of reducing power loss in a power supply line or a matching unit.

A plasma processing apparatus according to a first aspect of the present invention includes: a high-frequency power supply unit that generates high-frequency power; a plurality of plasma processing units; and a matching device, a plasma load of the plurality of plasma processing units and the The high-frequency power supply unit performs impedance matching; and the power supply unit supplies high-frequency power matched to the matching device to the plurality of plasma processing units, and the power supply unit has a plurality of plasma processing units Inductive coupling is used to supply the inductive coupling portion of the high frequency power, and the inductive coupling portion includes a linear primary power supply rod, and the high frequency power supply unit passes through the aforementioned The output of the matching device is supplied with the high-frequency power; the plurality of secondary side coils generate an induced electromotive force by the high-frequency fluctuation magnetic flux generated around the linear primary power supply rod, and the plurality of the aforementioned electromotive force are generated Each of the plasma processing sections supplies an induced current generated by the induced electromotive force.

A plasma processing apparatus according to a second aspect of the present invention includes: a high-frequency power supply unit that generates high-frequency power; a plurality of plasma processing units; and a matching device, wherein a plasma load of the plurality of plasma processing units is higher than the above And performing impedance matching between the frequency power supply units; and the power supply unit supplies the high frequency power generated by the high frequency power supply unit to the plurality of plasma processing units via the output of the matching device, wherein the power supply unit has the plurality of Each of the plasma processing units supplies the inductive coupling unit of the high frequency power using inductive coupling, and the high frequency power is distributed to each of the plurality of plasma processing units by the inductive coupling portion. Composition.

According to the invention, it is possible to provide a plasma processing apparatus which can reduce power loss in a power supply line or a matching unit. Further, the invention provides a plasma processing apparatus capable of efficiently distributing power to a plurality of plasma processing units in a plasma processing apparatus capable of reducing power loss in a power supply line or a matching unit.

G‧‧‧Processed body

1‧‧‧Processing module

2‧‧‧High Frequency Power Supply Department

3‧‧‧The Plasma Processing Department

4‧‧‧matcher

5‧‧‧Power Supply Department

6‧‧‧Inductive coupling

7‧‧1 times side power supply rod

7a‧‧1 times side power supply coil

8‧‧‧2 times side coil

11‧‧‧Upper electrode

12‧‧‧ lower electrode

13‧‧‧ capacitor

14‧‧‧ capacitor

15‧‧‧Flexible wire

17‧‧‧2 secondary power supply lines

18‧‧‧ capacitor

19‧‧‧Intermediate capacitor

Fig. 1 is a cross-sectional view schematically showing an example of a plasma processing apparatus according to an embodiment of the present invention.

[Fig. 2] An equivalent circuit diagram of the plasma processing unit.

Fig. 3 is a cross-sectional view schematically showing a first modification of the plasma processing apparatus according to the embodiment.

[Fig. 4] An equivalent circuit diagram of the plasma processing unit.

Fig. 5 is a cross-sectional view schematically showing a second modification of the plasma processing apparatus of the embodiment.

[Fig. 6] An equivalent circuit diagram of the plasma processing unit.

Fig. 7 is a cross-sectional view schematically showing a third modification of the plasma processing apparatus according to the embodiment.

Fig. 8A is a plan view showing an example of a 2-turn coil which can be used in the third modification.

Fig. 8B is a side view showing an example of a 2-turn coil shown in Fig. 8A.

Fig. 9A is a side view showing a connection example of a 2-turn coil.

Fig. 9B is a side view showing a connection example of a 2-turn coil.

Fig. 9C is a side view showing a connection example of a 2-turn coil.

Fig. 9D is a side view showing a connection example of a 2-turn coil.

Fig. 10 is a cross-sectional view showing an example of a configuration in which the plasma processing unit is an odd number.

Fig. 11 is a cross-sectional view showing an example of a configuration in which parallel connection and inductive coupling are combined.

Fig. 12 is a cross-sectional view schematically showing a fourth modification of the plasma processing apparatus of the embodiment.

Fig. 13 is a cross-sectional view schematically showing a modification of the fourth modification.

[Fig. 14] A cross section schematically showing a modification of the fourth modification Figure.

Fig. 15 is a cross-sectional view schematically showing a modification of the fourth modification.

Fig. 16 is a cross-sectional view schematically showing a modification of the fourth modification.

Fig. 17A is a plan view schematically showing a fifth modification of the plasma processing apparatus according to the embodiment.

Fig. 17B is a cross-sectional view schematically showing a fifth modification of the plasma processing apparatus according to the embodiment.

Hereinafter, an embodiment of the invention will be described with reference to additional drawings. In the description, all the drawings are referred to, and the same reference numerals are used for the same parts.

Fig. 1 is a cross-sectional view schematically showing an example of a plasma processing apparatus according to an embodiment of the present invention.

As shown in FIG. 1, a plasma processing apparatus 100 according to an embodiment includes a processing module 1 and a high-frequency power supply unit 2. A processing chamber 1a for performing plasma processing is provided inside the processing module 1, and a plurality of plasma processing units 3 for plasma-treating the processed object G are accommodated in the processing chamber 1a. The high-frequency power supply unit 2 generates high-frequency power. The high frequency power system is input to the matcher 4. The matching device 4 performs impedance matching between the plasma load of the plurality of plasma processing units 3 and the high-frequency power supply unit 2. The high frequency power matched by the matching device 4 is supplied to the plurality of plasma processing units by the power supply unit 5. 3.

The power supply unit 5 of the present example has an inductive coupling unit 6 that supplies high-frequency power to each of the plurality of plasma processing units 3 using inductive coupling. The inductive coupling unit 6 includes a linear primary power supply rod 7 and is supplied with high frequency power from the high frequency power supply unit 2 via the output of the matching unit 4, and a plurality of secondary side coils 8. The plurality of secondary side coils 8 generate an induced electromotive force by the high-frequency variable magnetic flux Φ generated around the linear primary-side power supply rod 7, and supply each of the plurality of plasma processing sections 3 by the induced electromotive force The induced current I generated.

The plurality of plasma processing units 3 are arranged in parallel in the horizontal direction. Similarly, a plurality of secondary side coils 8 are arranged in parallel in the horizontal direction. The primary side power supply rod 7 is linearly extended in the horizontal direction so as to be inductively coupled to each of the secondary side coils 8. The high-frequency power applied to the primary side power supply rod 7 is branched in each of the secondary side coils 8, and is distributed to each of the plurality of plasma processing units 3. The normal direction of the coil surface of the secondary side coil 8 is shifted in the horizontal direction so that the high-frequency fluctuation magnetic flux Φ penetrates into the respective loops of the secondary side coil 8. In this example, the normal direction of the coil surface of the secondary side coil 8 is shifted by 90 in the horizontal direction. In this example, the secondary side coil 8 is set as a rectangular coil. The secondary side coil 8 can be not only a rectangular coil but also a circular coil. However, according to the rectangular coil, the area of the coil surface can be configured in a maximized manner in a limited space as compared with the circular coil, so that a larger induced electromotive force can be generated more efficiently. The advantage of V. Also, the rectangular coil is preferably a complete rectangle, but the circular coil is even an incomplete rectangle. It is also possible to efficiently obtain a large induced electromotive force V by providing a shape close to a rectangle (hereinafter referred to as a substantially rectangular shape). Moreover, it is also possible to increase the number of turns of the coil to increase the induced electromotive force V.

The primary side power supply bar 7 and the plurality of secondary side power coils 8 are provided outside the processing chamber 1a of the processing module 1. The outer wall of the processing module 1 is grounded. One end of the primary side power supply rod 7 is connected to the matching unit 4, and the other end is connected to the processing module 1 and grounded.

The plurality of plasma processing units 3 each have a parallel plate type electrode pair that is capacitively coupled to the upper electrode 11 and the lower electrode 12. The upper electrode 11 and the lower electrode 12 are disposed inside the processing chamber 1a. The object to be processed G is placed on the lower electrode 12. An example of the object to be processed G is a glass substrate used for the manufacture of a flat panel display or a solar cell. The object to be processed G is not limited to a glass substrate, and may be a semiconductor wafer.

One end of the secondary side coil 8 is connected to the upper electrode 11, and the other end is connected to the lower electrode 12 via a capacitor 13. The lower electrode 12 is connected to the process module 1 and grounded. The primary side power supply bar 7 and the lower electrode 12 may be directly grounded or may be grounded via a capacitor. In Fig. 2, an equivalent circuit diagram of the plasma processing unit 3 is shown.

As shown in FIG. 2, the plurality of plasma processing units 3 are each configured to include a closed circuit of the parallel plate type electrode pair, the secondary side coil 8 and the capacitor 13 composed of the upper electrode 11 and the lower electrode 12. In this example, the parallel plate type electrode pair, the secondary side coil 8 and the capacitor 13 are connected in series to each other to constitute a closed circuit. In the closed circuit shown in Figure 2, the capacitor The device 13 may also not be present. However, by having the capacitor 13 present in the closed circuit, the advantage of adjusting the impedance Z of the closed circuit shown in FIG. 2 can be obtained as compared with the case where the capacitor 13 is not directly connected via the conductive line. . When the high-frequency fluctuation magnetic flux Φ passes through the coil surface of the secondary side coil 8, the induced electromotive force V is generated in the secondary side coil 8, and the induced electromotive force V causes the induced current I to flow to the secondary side coil 8. The induced current I can be expressed by the following formula (1).

I=V/Z...(1)

From the formula (1), it can be understood that as long as the impedance Z of the closed circuit shown in Fig. 2 is lowered, the induced current I rises. When the impedance Z is lowered, for example, the capacitance of the capacitor 13 may be set such that the inductance L of the secondary side coil 8 and the combined capacitance C of the electrode pair and the capacitor 13 are close to the series resonance state. That is, the capacitance of the capacitor 13 is set to be close to ωL-1 / (ωC) = 0 (ω is an angular frequency). However, since the operation tends to become unstable, it is preferable to remove the complete series resonance state (ωL-1/(ωC) = 0).

In this manner, the capacitor 13 is provided, and the capacitance of the capacitor 13 is set such that the impedance of the closed circuit is lowered, whereby the induced current I can be generated with a value sufficiently larger than the output current from the matching unit 4. Since a large induced current I can be generated, plasma can be efficiently generated between the pair of parallel plate electrodes composed of the upper electrode 11 and the lower electrode 12.

Again, it can be used as the reactance X of the imaginary part of the impedance Symbol to adjust the direction of the induced current I. In particular, when the negative reactance X is present, since the magnetic field formed by the induced current I excited by the secondary side coil 8 has the same direction as the magnetic field formed by the primary side power supply rod 7, the mutual excitation can be enhanced. Further improve efficiency. When the sign of the reactance X is set to be negative, the capacitance value of the capacitor 13 may be set to a value smaller than the capacitance value of the complete series resonance state. Further, in order to set the sign of the reactance X to be negative, it is possible to set at least one of the value of the inductance L of the secondary side coil 8 and the value of the electrode pair and the combined capacitance C of the capacitor 13 by a small amount. Implemented.

Further, the capacitor 13 may have a fixed capacitance value, but a variable capacitor having a variable capacitance value is preferable. This is because the impedance of the closed circuit can be finely adjusted as long as it is a variable capacitor.

Further, by using the capacitor 13 as a variable capacitor, it is also possible to control the control value such as the current value/voltage value by the feedback control during the plasma processing, and also to adjust the power after the maintenance during the maintenance. Appropriate capacitance values in the slurry treatment, and do not change the capacitance value during plasma processing.

According to the plasma processing apparatus 100 of the first embodiment, the high-frequency power supply unit 2 and the plurality of plasma processing units 3 are not connected in parallel, and the plurality of plasma processing units 3 are distributed and supplied from the high-frequency power supply unit 2 by inductive coupling. High frequency power. In the inductive coupling, as described above, the sum of the secondary side output currents can be made larger than the input current in accordance with the ratio of the induced electromotive force to the impedance of the secondary side closed circuit. The larger current flows only in the closed circuit of the secondary side, that is, the plurality of plasma processing sections 3, and on the primary side, for example, the power supply rod 7 Or the matcher 4 has only a small current flowing. Therefore, it is possible to directly eliminate the increase in power loss in the portion where the plasma generation is not caused, for example, the power supply rod 7 (power supply line) or the matching unit 4.

Thereby, according to an embodiment, the advantage obtained is that a plasma processing apparatus which can reduce the power loss in the power supply line or the matching unit can be obtained.

Moreover, since only a small current flows on the primary side, the output current from the high-frequency power supply unit 2 can be reduced. Therefore, the number of the plasma processing units 3 that can be connected in parallel to one high-frequency power supply unit 2 can be increased. For example, when the high-frequency power supply unit 2 and the plurality of plasma processing units 3 are connected in parallel, for example, it is necessary to increase the number of high-frequency power supply units that are expensive in response to the output of the high-frequency power supply unit 2.

On the other hand, according to one embodiment, the output current from the high-frequency power supply unit 2 can be reduced. Therefore, it is also possible to drive the plurality of units in the plasma processing unit by one high-frequency power supply unit 2. Therefore, it is also possible to obtain an advantage that the manufacturing cost of the plasma processing apparatus can be reduced.

Moreover, according to one embodiment, the power supply unit 5 and the inductive coupling unit 6 are integrated. Therefore, it is possible to provide only a large current in the vicinity of the plurality of plasma processing units 3. In other words, the power supply unit 5 and the inductive coupling unit 6 are integrated, and the large current flows therethrough only in the vicinity of the plurality of plasma processing units 3, and the advantage of suppressing an increase in power loss can be promoted.

Next, several modifications of the modification of the above embodiment will be described.

(First Modification)

Fig. 3 is a cross-sectional view schematically showing a first modification of the plasma processing apparatus according to the embodiment, and Fig. 4 is an equivalent circuit diagram of the plasma processing unit.

As shown in FIGS. 3 and 4, when the upper electrode 11 and the lower electrode 12 are supplied with power from only one of the upper electrode 11 and the lower electrode 12, the upper electrode 11 and the lower electrode 12 are formed by the resistance component R1 of the upper electrode 11 and the resistance component R2 of the lower electrode 12. There is a possibility of plasma imbalance in the processing space between the two. In order to prevent the plasma imbalance, as shown in the plasma processing apparatus 100a of the first modification, the opposite side of the feeding point from the secondary coil 8 with respect to the upper electrode 11 and the lower electrode 12 via the capacitor 14 is provided. Connect to each other. The capacitor 14 is disposed outside the processing chamber 1a, and the capacitor 14 is adjusted such that the current distribution inside the upper electrode 11 and the current distribution inside the lower electrode 12 are equal.

The capacitor 14 may be a capacitor having a fixed capacitance value or a variable capacitor having a variable capacitance value. In the case of a variable capacitor, it is obtained that the current distribution inside the upper electrode 11 and the current distribution inside the lower electrode 12 can be finely adjusted more evenly.

(Second modification)

Fig. 5 is a cross-sectional view schematically showing a second modification of the plasma processing apparatus according to the embodiment, and Fig. 6 is an equivalent circuit diagram of the plasma processing unit.

As shown in FIGS. 5 and 6, the plasma processing apparatus 100b according to the second modification differs from the plasma processing apparatus 100 shown in FIG. The two plasma processing units 3 are combined into one closed circuit. Even if none of the plurality of plasma processing units 3 is formed as a closed circuit, for example, the left and right plasma processing units 3 may share the inductive coupling portion 6 to form one closed circuit. In this case, the phases of the high-frequency power supplied to each other by the left and right plasma processing units 3 are reversed, but even if they are formed to be inverted, there is no problem in plasma generation.

(Third Modification)

Fig. 7 is a cross-sectional view schematically showing a third modification of the plasma processing apparatus of the embodiment.

As shown in Fig. 7, the plasma processing apparatus 100c according to the third modification differs from the plasma processing apparatus 100 shown in Fig. 1 in that the primary power supply coil 7a is used instead of the primary power supply rod 7. And the case where the high frequency electric power is distributed to each of the plurality of plasma processing units 3 in the induction coupling unit 6 . In the present example, the primary power supply coils 7a are plural, and the inductive coupling portion 6 is provided for each of the plurality of primary power supply coils 7a. Each of the inductive coupling units 6 includes one primary power supply coil 7a and two or more secondary secondary coils 8. Thereby, the high-frequency power is branched in the inductive coupling unit 6, and the power can be distributed to each of the plurality of plasma processing units 3. As a coil for realizing the branching of the inductive coupling unit 6, for example, a 2-turn coil can be exemplified.

Fig. 8A is a plan view showing an example of a 2-turn coil which can be used in the third modification, and Fig. 8B is a side view thereof.

As shown in FIG. 8A and FIG. 8B, it can be configured once by overlapping The two-turn coil 101 is formed so that the conductive wire for the side power supply coil 7a and the conductive wire for forming the secondary side coil 8 are wound in a spiral shape while maintaining the overlapping state.

As shown in FIG. 9A, two of the two turns of the coil 101 are arranged in parallel in the horizontal direction, and one of the respective ends of the primary side power supply coil 7a is electrically connected by the conductive wire 15. One end and the other end of each of the secondary side coils 8 are electrically connected to different plasma processing units 3, respectively. As described above, the inductive coupling unit 6 shown in FIG. 7 can divide the two secondary side coils 8 from the one primary power supply coil 7a.

Further, the number of branches is as shown in FIG. 9A, and is not limited to "2". For example, as shown in FIG. 9B, three 2-turn coils 101 are arranged in parallel in the horizontal direction, and the primary-side power supply coils 7a are connected by using the conductive wires 15 to form one coil, and one end of each of the secondary-side coils 8 is provided. The other end is electrically connected to different plasma processing units 3, respectively. In this manner, the three secondary side coils 8 can be branched from the one primary power supply coil 7a.

In this way, by changing the number of laminations of the two turns of the coil 101, the number of branches can be set to any number of "natural numbers of 2 or more".

Further, in the example of FIGS. 9A and 9B, one end of each primary power supply coil 7a is electrically connected by using the conductive wire 15, but as shown in FIG. 9C and FIG. 9D, the primary power supply coil may be used. 7a is one, and two or more secondary side coils 8 are wound around one primary power supply coil 7a. In this manner, the secondary side coils 8 of 2 or more can be branched from the primary power supply coils 7a.

Moreover, as shown in the inductive coupling portion 6 at the extreme end of FIG. It is also possible to set the number of branches of the inductive coupling unit 6 from a certain place to one. When the number of divisions in one place of the inductive coupling unit 6 is set to 1, for example, even if the number of the plasma processing units 3 is an odd number, the advantage of being able to apply the plasma processing apparatus of one embodiment can be obtained.

Further, in the plasma processing apparatus 100c shown in Fig. 7, a plurality of primary side power feeding coils 7a are connected in series between the matching unit 4 and the grounding point. However, as shown in FIG. 11, the plurality of primary side power supply coils 7a from the matching unit 4 may be connected by the power supply lines 16 connected in parallel. When the matching unit 4 is connected to the plurality of primary power supply coils 7a and connected by the branching power supply lines 16, the distance from the output of the matching unit 4 to the primary power supply coils 7a can be increased. Equal to each other. Therefore, the advantage obtained is that the resistance components from the output of the matching unit 4 to the primary power supply coils 7a are all the same, and the high-frequency power can be uniformly supplied to each of the plurality of primary power supply coils 7a. Further, a more stable plasma generation can be formed in each of the plurality of plasma processing sections 3.

(Fourth Modification)

Fig. 12 is a cross-sectional view schematically showing a fourth modification of the plasma processing apparatus according to the embodiment.

As shown in FIG. 12, the plasma processing apparatus 100d according to the fourth modification differs from the plasma processing apparatus 100 shown in FIG. 1 in that it includes the output of the inductive coupling unit 6 from the high-frequency power supply unit 2 via the matching unit 4. One primary power supply coil 7a and a plurality of secondary side coils 8 are supplied with high frequency power, and each of the plurality of secondary side coils 8 is arranged in the horizontal direction. It is placed inside the primary power supply coil 7a. In this example, the primary power supply coil 7a is a rectangular coil or a substantially rectangular coil, and each of the secondary coils 8 is also provided, for example, as a rectangular coil or a substantially rectangular coil.

In this manner, one primary power supply coil 7a can be formed long in the horizontal direction, and a plurality of secondary secondary coils 8 can be disposed inside.

According to the fourth modification, for example, each length of the secondary power supply line 17 of the plurality of plasma processing units 3 arranged from the plurality of secondary side coils 8 to the horizontal direction can be configured as They are roughly equal to each other.

Further, in the fourth modification, it may be further modified as described below.

For example, as shown in FIG. 13, the rectangular coil having one end connected to the matching device 4 or the other end of the substantially rectangular coil primary power supply coil 7a may be grounded via the capacitor 18. In the ground point processing module 1 of this example, the other end of the primary side power supply coil 7a of this example is connected to the processing module 1 via the capacitor 18. The capacitor 18 is, for example, appropriately adjusting the impedance of the primary side power supply coil 7a. The capacitor 18 may have a capacitance value. However, from the viewpoint of appropriately adjusting the impedance of the primary power supply coil 7a, as shown in FIG. 13, it is preferable to use a variable variable capacitor. Further, in the above example, the capacitor 13 is grounded via the lower electrode 12, but may be directly grounded. The capacitor 13 of the example shown in FIG. 13 is directly connected to the processing module 1 and grounded, for example.

Further, the capacitor 18 that appropriately adjusts the impedance of the primary side power supply coil 7a can also be used in the above-described one embodiment and the first to the first 3 Any of the modifications. Further, the capacitor 13 can be directly grounded, and can be applied to any of the above-described embodiments and the first to third modifications.

Further, as shown in FIG. 14, the primary side power supply coil 7a may be formed along the outer peripheral portion of the plurality of secondary side coils 8 so as to cover a plurality of rectangular or substantially rectangular second-order side coils 8. In this example, the primary side power supply coil 7a is bent or curved along the outer peripheral portion of each of the plurality of secondary side coils 8 so that the primary side power supply coil 7a covers a plurality of rectangular or substantially rectangular shapes. The outer peripheral portion of each of the secondary side coils 8. In this example, when the primary side power supply coil 7a is formed in a curved or curved shape along the outer circumference of the plurality of secondary side coils 8, the area in which the primary side power supply coil 7a and the secondary side coil 8 face each other increases. It is large, and a higher degree of coupling can be further obtained than in the case of unbending or curved. Therefore, the induced electromotive force V can be generated more efficiently.

Further, in order to increase the induced electromotive force V, when the number of turns of the primary side power supply coil 7a is increased, the length of the primary side power supply coil 7a is increased. When the length of the primary side power supply coil 7a is, for example, 1 m or more, a wavelength effect due to a potential difference inside the primary power supply coil 7a is generated, and a discharge occurs in the circuit, and the secondary side coil 8 cannot be efficiently used. Combine it. In this case, as shown in FIG. 15, a capacitor (hereinafter referred to as an intermediate capacitor) 19 is inserted in the primary power supply coil 7a at an appropriate interval, and the primary power supply coil 7a is divided by the intermediate capacitor 19. The length of each of the primary-side power supply coils 7a that has been divided is relatively short compared to the length before division. In this manner, the primary side power supply coil 7 is divided by the intermediate capacitor 19, and the length of each of the primary side power supply coils 7a is shortened. In this way, it is possible to reduce the above-described wavelength effect, and it is possible to improve the coupling efficiency with the secondary side coil 8 even when the length of the primary power supply coil 7a before the division is formed to be, for example, 1 m or more.

Further, as a specific example of the interval (the maximum length of the primary power supply coil 7a that can be tolerated) for dividing the primary power supply coil 7a, if the wavelength of the high frequency power is λ, the high frequency voltage Vpp will cause the largest change in λ/4. Therefore, if the intermediate capacitor is placed at the position of 0 to λ/4 of the primary side power supply coil 7a, it is expected to reduce the above wavelength effect, but in practical applications, It is preferable that the intermediate capacitor 19 is provided at a position of λ/32 to λ/4. Thereby, the length of each of the divided primary power supply coils 7a can be suppressed to the range of 0 to λ/4 (m), and the practical application can be suppressed to the range of λ/32 to λ/4 (m). And can reduce the above wavelength effect. Further, as shown in FIG. 16, the primary power feeding coil 7a may be provided to extend inside the feeding portion 5 in the horizontal direction after being output from the matching device 4, and may be performed only once at the end portion of the feeding portion 5, for example. The composition of the fold back. In this case, the advantage of shortening the length of the primary side power supply coil 7a can be obtained. However, it is of course possible to use the intermediate capacitor 19 to suppress the length of each of the divided primary power supply coils 7a to 0 to λ/4. The range of (m) can be suppressed in the range of λ/32~λ/4(m) in practical applications.

Further, in any of the fourth modifications shown in FIGS. 12 to 16, as described above, the direction of the induced current I can be adjusted by the sign of the reactance X of the imaginary part of the impedance. In particular, when the sign of the reactance X is set to be negative, the magnetic field formed by the induced current I excited by the secondary side coil 8 is The magnetic fields formed by the primary side power supply coils 7a are in the same direction to enhance the magnetic fields of each other. Therefore, it is expected that the efficiency can be further improved. When the sign of the reactance X is set to be negative, the capacitance value of the capacitor 13 may be set to a value smaller than the capacitance value of the complete series resonance state. Further, in order to set the sign of the reactance X to be negative, it is possible to set at least one of the value of the inductance L of the secondary side coil 8 and the value of the electrode pair and the combined capacitance C of the capacitor 13 by a small amount. To achieve it.

Further, a capacitor 13 may be provided in each of the secondary side power supply lines 17 provided between the secondary side coil 8 and the plasma processing unit 3, and the capacitance of the capacitor 13 may be adjusted to control a plurality of plasma processing units. The amount of power allocated to each of the three.

In this case, it is preferable that the capacitor 13 is a variable capacitor whose capacitance value is variable. If the capacitor 13 is used as a variable capacitor, an advantage that a finer control of the amount of power to be distributed can be obtained.

Further, by using the capacitor 13 as a variable capacitor, it is also possible to control the control value such as the current value/voltage value by the feedback control during the plasma processing, and also to adjust the power after the maintenance during the maintenance. Appropriate capacitance values in the slurry treatment, and do not change the capacitance value during plasma processing.

Further, in the fourth modification, the plurality of secondary side coils 8 are formed as rectangular coils or substantially rectangular coils, but circular coils may be used, and further in the fourth modification and the fourth modification. Each of the modifications of the various embodiments can be implemented in various configurations. Further, in each of the fourth modification and the further modification of the fourth modification, the system will be used once. One side power supply coil 7a is provided, but two or more primary side power supply coils 7a such as rectangular coils or substantially rectangular coils may be provided, and for example, each of two or more primary power supply coils 7a is provided. A plurality of secondary side coils 8 are disposed on the inner side, for example, in a side-by-side arrangement.

(Fifth Modification)

17A is a plan view schematically showing a fifth modification of the plasma processing apparatus according to the embodiment, and FIG. 17B is a cross-sectional view schematically showing a fifth modification.

As shown in FIG. 17A and FIG. 17B, the plasma processing apparatus 100e according to the fifth modification differs from the plasma processing apparatus 100 shown in FIG. 1 in that the inductive coupling unit 6 is included from the high-frequency power supply unit 2 via the matching unit. The output of 4 supplies one primary power supply coil 7a and a plurality of secondary side coils 8 of high frequency power, and adjusts one primary power supply coil by changing the position of each of the plurality of secondary side coils 8, for example, an angle θ. The coupling degree of each of 7a and the plurality of secondary side coils 8 is configured to control the amount of distributed power supplied to each of the plurality of plasma processing units 3.

In this manner, the degree of coupling between each of the primary side power supply coils 7a and the plurality of secondary side coils 8 can be adjusted, and the amount of distributed power supplied to each of the plurality of plasma processing units 3 can be controlled. In the case of this example, the adjustment of the degree of coupling has, for example, the same function as the capacitance adjustment of the capacitor 13 of the fourth modification. Therefore, the capacitor 13 described in the fourth modification example can be omitted from each of the secondary side power supply lines 17 provided between the secondary side coil 8 and the plasma processing unit 3. The advantages available are The capacitor 13 shortens the wiring length of the secondary side power supply line through which the large induced current flows, and can further suppress the increase in power loss.

Although the invention has been described above in accordance with an embodiment, the invention is not limited to the embodiment described above, and various modifications can be made. Further, in the embodiment of the invention, the above-described embodiment is not a single embodiment, and the modification is not limited to the first to fifth modifications.

For example, in the above-described embodiment, a plurality of plasma processing units 3 and a plurality of secondary side coils 8 are arranged in parallel in the horizontal direction. However, the plurality of plasma processing units 3 and the plurality of secondary side coils 8 may be arranged side by side. For example, a plurality of plasma processing units 3 and a plurality of secondary side coils 8 may be sequentially stacked in the height direction.

Further, the above embodiment is preferably used for plasma treatment of a large glass substrate of a semiconductor wafer. The plasma processing apparatus that performs the plasma treatment on the glass substrate is a large-sized plasma processing unit having a size of a meter. Compared with the plasma processing unit that processes the semiconductor wafer, the large plasma processing unit that processes the glass substrate tends to increase the power loss in the power supply unit 5 or the matching unit 4 when connected in parallel to one or a plurality of high-frequency power sources. In this case, the above-described one embodiment is preferably applied to a plasma processing apparatus having a large-scale plasma processing unit having a size of a meter.

1‧‧‧Processing module

1a‧‧‧Processing room

2‧‧‧High Frequency Power Supply Department

3‧‧‧The Plasma Processing Department

4‧‧‧matcher

5‧‧‧Power Supply Department

6‧‧‧Inductive coupling

7‧‧1 times side power supply rod

8‧‧‧2 times side coil

11‧‧‧Upper electrode

12‧‧‧ lower electrode

13‧‧‧ capacitor

100‧‧‧ Plasma processing unit

I‧‧‧Induction current

G‧‧‧Processed body

Φ‧‧‧High frequency variable magnetic flux

Claims (35)

A plasma processing apparatus includes: a high-frequency power supply unit that generates high-frequency power; a plurality of plasma processing units; and a matching device that performs between a plasma load of the plurality of plasma processing units and the high-frequency power supply unit And a power supply unit that supplies high-frequency power that is impedance-matched to the matching unit to the plurality of plasma processing units, wherein the power supply unit has the foregoing plurality of plasma processing units that are supplied by inductive coupling Inductive coupling unit for high-frequency power, the inductive coupling unit includes a linear primary power supply rod, and the high-frequency power supply is supplied with the high-frequency power from the high-frequency power supply unit via the output of the matching unit; The coil generates an induced electromotive force by a high-frequency fluctuation magnetic flux generated around the linear primary power supply rod, and supplies an induced current generated by the induced electromotive force to each of the plurality of plasma processing units. The plasma processing apparatus according to claim 1, wherein the plurality of plasma processing units and the plurality of secondary side coils are arranged side by side, and the primary power supply rods are linearly extended to inductively couple Each of the plurality of secondary side coils arranged side by side is configured such that the secondary side coil is branched and distributed to each of the plurality of plasma processing units. The plasma processing apparatus according to claim 1, wherein the secondary side coil is such that a rectangular coil or a circular coil is close to a coil of a rectangular shape. The plasma processing apparatus according to claim 1, wherein the plurality of plasma processing units each have a parallel plate type electrode pair that is capacitively coupled to each other. The plasma processing apparatus of claim 4, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair and the secondary side coil to be larger than the former matching device The value of the output current is such that each sum of the induced currents generated in the closed circuit described above is generated. The plasma processing apparatus according to claim 4, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair, the secondary side coil, and the capacitor, as compared with When directly connecting to the closed circuit without passing through the capacitor, the capacitance value of each of the capacitors included in each of the closed circuits is adjusted so that the impedance of the closed circuit is lowered. The plasma processing apparatus according to claim 4, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair, the secondary side coil, and the capacitor, and are included in the foregoing The capacitance value of each of the capacitors of the closed circuit is adjusted to be smaller than the value of the capacitance of the closed circuit formed to be the smallest capacitance value. A plasma processing apparatus according to claim 6, wherein the value is greater than the value of the output current from the aforementioned matching unit. The sum of the induced currents generated by the closed circuits. The plasma processing apparatus of claim 5, wherein the current generated by the current of the secondary side coil is generated by adjusting a reactance value of each of the closed circuits and flowing a current in the same direction to each of the closed circuits. The magnetic flux and the magnetic flux generated by the current of the primary side power supply rod are oriented in the same direction. The plasma processing apparatus of claim 9, wherein the respective reactance values of the closed circuits are set to be negative. The plasma processing apparatus of claim 6, wherein the capacitor is a variable capacitor having a variable capacitance value. The plasma processing apparatus according to claim 4, wherein the opposite sides of the feed points from the secondary side coils are connected to each other via the second capacitor with respect to the parallel plate type electrode pair. The plasma processing apparatus according to claim 12, wherein the second capacitor is adjusted so that the current distribution inside the parallel plate type electrode pair is uniform. The plasma processing apparatus according to claim 13, wherein the second capacitor is a variable capacitor having a variable capacitance value. A plasma processing apparatus comprising: a high-frequency power supply unit that generates high-frequency power; a plurality of plasma processing units; a matching device, and a plasma load of the plurality of plasma processing units and the foregoing The high frequency power supply unit performs impedance matching; and the power supply unit supplies the high frequency power generated in the high frequency power supply unit to the plurality of plasma processing units via the output of the matching unit, and the power supply unit has the plurality of Each of the plasma processing units uses an inductive coupling unit that supplies the high-frequency power by inductive coupling, and the high-frequency power is distributed to the plurality of plasma processing units by being distributed to the inductive coupling unit. Make up. The plasma processing apparatus according to claim 15, wherein the plurality of plasma processing units each have a parallel plate type electrode pair that is capacitively coupled to each other. The plasma processing apparatus according to claim 15, wherein the inductive coupling unit has one or two or more primary power feeding coils, and is supplied from the high frequency power supply unit via an output of the matching device. High-frequency power; a plurality of secondary side coils, an induced electromotive force is generated by a high-frequency varying magnetic flux generated around the one-side or two-side power supply coil, and the induced electromotive force is supplied to the plasma processing unit The induced current generated. The plasma processing apparatus of claim 17, wherein the power supply line that supplies the high-frequency power to the one-side power supply coil of the one or more from the output of the matching device is connected in parallel to make the former The distances from the output of the matcher to the one-side power supply coil of the above 1 or 2 are equal to each other. The plasma processing apparatus according to claim 15, wherein the inductive coupling unit includes one or more primary power feeding coils, and the high frequency power supply unit is supplied with the output from the matching device. High-frequency power; a plurality of secondary side coils, an induced electromotive force is generated by a high-frequency varying magnetic flux generated around the one-side or two-side power supply coil, and the induced electromotive force is supplied to the plasma processing unit The generated induced current, each of the plurality of secondary side coils, is arranged side by side in the inner side of the primary power supply coil of the above 1 or 2 or more. The plasma processing apparatus according to claim 19, wherein the lengths of the secondary power supply lines from the plurality of secondary side coils to the plurality of plasma processing sections are equal to each other. The plasma processing apparatus according to claim 19, wherein the primary side power supply coil covers the secondary side coil, and is formed along the outer circumference of the secondary side coil. The plasma processing apparatus of claim 19, wherein the primary power supply coil and the secondary secondary coil are rectangular coils Or roughly rectangular coils. The plasma processing apparatus of claim 17, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair and the secondary side coil to be larger than the former matching device. The value of the output current produces the sum of the induced currents generated by the respective closed circuits. The plasma processing apparatus according to claim 17, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair, the secondary side coil, and the capacitor, as compared with When directly connecting to the closed circuit without passing through the capacitor, the capacitance value of each of the capacitors included in each of the closed circuits is adjusted so that the impedance of the closed circuit is lowered. The plasma processing apparatus according to claim 17, wherein the plurality of plasma processing units are each configured to include a closed circuit of the parallel plate type electrode pair, the secondary side coil, and the capacitor, and are included in the foregoing The capacitance value of each of the capacitors of the closed circuit is adjusted to be smaller than the value of the capacitance of the closed circuit formed to be the smallest capacitance value. A plasma processing apparatus according to claim 24, wherein each of the induced currents generated in the closed circuit is generated at a value greater than an output current from the matching unit. The plasma processing apparatus of claim 23, wherein the current generated by the secondary side coil is generated by adjusting respective reactance values of the closed circuit and flowing current in the same direction to each of the closed circuits The magnetic flux is directed in the same direction as the magnetic flux generated by the current of the primary side power supply coil. A plasma processing apparatus according to claim 27, wherein the reactance value of each of the closed circuits is set to be negative. The plasma processing apparatus according to claim 17, wherein the opposite sides of the feed points from the secondary side coils are connected to each other via the second capacitor with respect to the parallel plate type electrode pair. The plasma processing apparatus according to claim 19, wherein a capacitor is provided in each of the secondary power supply lines between the plurality of secondary side coils and the plurality of plasma processing units, and the capacitor is configured to adjust the The capacitance of the capacitor controls the amount of power supplied to each of the plurality of plasma processing units. The plasma processing apparatus of claim 30, wherein the capacitor is a variable capacitor having a variable capacitance value. A plasma processing apparatus according to claim 19, wherein The intermediate capacitor is placed between the aforementioned primary side power supply coils. The plasma processing apparatus according to claim 32, wherein when the wavelength of the high-frequency power is λ, the intermediate capacitor is provided at a position of 0 to λ/4 of the primary power supply coil, and the foregoing is divided. The primary side power supply coil is used to suppress the length of each of the divided primary power supply coils in the range of 0 to λ/4. The plasma processing apparatus according to claim 15, wherein the inductive coupling unit includes one or more primary power feeding coils, and the high frequency power supply unit is supplied with the output from the matching device. a high-frequency power; a plurality of secondary side coils, wherein an induced electromotive force is generated by a high-frequency fluctuation magnetic flux generated around the one- or more-second power supply coils, and the plurality of plasma processing units are supplied The induced current generated by the induced electromotive force is configured to change the positional relationship of each of the plurality of secondary side coils and adjust the coupling degree of each of the one or more secondary power feeding coils of the one or more and the plurality of secondary secondary coils to control A power supply amount is allocated to each of the plurality of plasma processing units. The plasma processing apparatus according to claim 34, wherein the change in the positional relationship is performed by adjusting an angle of the primary side power supply coil of the one or more or more and the plurality of secondary side coils.