TW201425648A - Etchant composition, method of forming metal pattern and method of manufacturing an array substrate - Google Patents

Abstract

Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an etchant composition which reduces the side etching rate for a silver (Ag) or silver alloy mono-layer film or a multi-layer film consisting of the mono-layer film and an indium oxide film, which exhibits uniform etching characteristics without damaging the lower data line and generating a residue and which has improved long-term storability, a method of forming a metal pattern using the same, and a method of manufacturing an array substrate for organic light emitting displays (OLEDs) using the same. In order to accomplish the above object, an aspect of the present invention provides an etchant composition for a silver (Ag) or silver alloy mono-layer film or a multi-layer film consisting of the mono-layer film and an indium oxide film, including, based on a total weight thereof: 0.1 to 0.8 wt% of a heterocyclic compound having a carboxyl group. The etchant composition may further include nitric acid, sulfuric acid, a persulfate, a phosphate and a residue of water. Another aspect of the present invention provides a method of forming a metal pattern, including the steps of: (i) forming at least one film selected from among a silver (Ag) or silver alloy mono-layer film and a multi-layer film consisting of the mono-layer film and an indium oxide film on a substrate; and (ii) etching the at least one film using the etchant composition. Still another aspect of the present invention provides a method of manufacturing an array substrate for an organic light emitting display (OLED), including the steps of: (a) forming a gate electrode on a substrate; (b) forming a gate insulation layer on the substrate including the gate electrode; (c) forming a semiconductor layer on the gate insulation layer; (d) forming a source electrode and a drain electrode on the semiconductor layer; and (e) forming a pixel electrode to be connected to the drain electrode, wherein at least one step of the steps (a), (d) and (e) includes the steps of: forming at least one film selected from among a silver (Ag) or silver alloy mono-layer film and a multi-layer film consisting of the mono-layer film and an indium oxide film; and etching the at least one film using the etchant composition to form each of the electrodes.

Description

Etchant composition, method for forming metal pattern, and method for fabricating array substrate

The present invention relates to an etchant composition for a single layer film of silver (Ag) or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film, and a metal for forming the metal using the etchant composition A method of patterning and a method of fabricating an array substrate for an organic light emitting diode (OLED) using the etchant composition.

An organic light emitting diode includes two opposing electrodes and an organic multilayer film having semiconductor properties and disposed between two opposing electrodes. Such an organic light emitting diode utilizes an organic material to convert electrical energy into an organic luminescence phenomenon of light energy. Specifically, such an organic light emitting diode is a self-luminous display that utilizes a phenomenon in which electrons and holes injected into a film of an organic material (single molecule/low molecule or polymer) through a negative electrode and a positive electrode are recombined to Excitons are formed, and light having a specific wavelength is emitted as energy from excitons.

In a flat panel display, an organic light emitting display (hereinafter, referred to as "OLED") as a self-luminous device can be manufactured lightly because it does not require a backlight unit used in a liquid crystal display (LCD) which is a non-emissive display. And thin. The advantage of OLED is that it has superior viewing angle and contrast compared with LCD, and it has advantages in terms of energy consumption. It can be driven by DC low voltage, has fast response speed, and is resistant to external impact due to its internal structure being solid. And it can be used over a wide range of temperatures.

At the same time, with the increase in the display area of organic light-emitting displays (OLEDs), and thin The gate and data lines of the film transistor (TFT) are connected to lengthen, thereby increasing the wiring resistance. For this reason, when chromium (Cr), molybdenum (Mo), aluminum (Al), or an alloy thereof is used in the gate line and the data line, it is difficult to increase the size of the flat panel display and it is difficult to achieve high resolution of the flat panel display. Therefore, in order to solve the problem of signal delay caused by an increase in resistance, it is necessary to manufacture a gate line and a data line with a material having a low resistivity.

For this purpose, a silver (Ag) film, a silver alloy film or a multilayer film including a silver film and a silver alloy film (the films have a lower resistivity (resistance: about 1.59 μΩ·cm) and higher than other metal films) In the case of the brightness of other metal films, the electrodes applied to the color filter, the wiring of the LCD, and the reflecting plate, efforts have been made to increase the size of the flat panel display, achieve high resolution of the flat panel display, and reduce energy consumption. As part of this effort, etchants suitable for use in these materials have been developed.

However, since the adhesion of silver to the lower substrate is very small, silver (Ag) cannot be easily deposited on the lower substrate, such as an insulating substrate made of glass, or made of pure amorphous germanium or doped amorphous germanium. Semiconductor substrate. In addition, silver (Ag) wiring is easily lifted or peeled. Moreover, even in the case where a silver (Ag) conductive layer is deposited on the substrate, the silver (Ag) conductive layer is excessively or unevenly etched when a conventional etchant is used in patterning the silver conductive layer. Therefore, the wiring is lifted or peeled, and the lateral profile of the wiring is made poor. Therefore, research on a novel etchant for solving the above problems has been conducted.

For example, Korean Patent No. 10-0579421 discloses an etchant composition containing nitric acid, phosphoric acid, acetic acid, an auxiliary oxide solvent, a fluorine-containing carbon-based surfactant, and water. However, the etchant composition has a problem in that although the composition etches the silver of the transparent electrode/silver/transparent electrode film assembly and prevents the transparent electrode film from being corroded, the phosphoric acid contained in the composition damages the lower data line. (lower data line). Therefore, there is a need to develop an etchant composition for solving the above problems.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to provide an etchant composition which reduces a single layer film of silver (Ag) or a silver alloy or The side etching rate of the multilayer film composed of the single layer film and the indium oxide film exhibits uniform etching characteristics without damaging the lower data line and no residue, and has improved long-term storability, and is another aspect of the present invention. It is an object to provide a method of forming a metal pattern using the etchant composition and a method of fabricating an array substrate for an organic light emitting display (OLED) using the etchant composition.

In order to achieve the above object, an aspect of the invention provides an etchant composition for a single layer film of silver (Ag) or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film, based on The etchant composition comprises 0.1 to 0.8% by weight of a heterocyclic compound having a carboxyl group, based on the total weight of the etchant composition.

The etchant composition may also comprise nitric acid, sulfuric acid, persulfate, phosphate, and the balance of water.

Another aspect of the present invention provides a method of forming a metal pattern, the method comprising the steps of: (i) forming a single layer film selected from silver (Ag) or a silver alloy on a substrate, and forming the single layer film and indium from the substrate At least one of the multilayer films of the oxide film; and (ii) etching the at least one film using the etchant composition described above.

Yet another aspect of the present invention provides a method of fabricating an array substrate for an organic light emitting display (OLED), the method comprising the steps of: (a) forming a gate on a substrate; (b) including the gate Forming a gate insulating layer on the substrate; (c) forming a semiconductor layer on the gate insulating layer; (d) forming a source and a drain on the semiconductor layer; and (e) forming a pixel connected to the drain An electrode, wherein at least one of steps (a), (d), and (e) comprises the steps of: forming a monolayer film selected from the group consisting of silver (Ag) or a silver alloy, and from the monolayer film and indium oxide At least one of the plurality of films of the film composition; and the at least one film is etched using the above etchant composition to form respective electrodes.

The above and other objects, features and advantages of the present invention will become more <RTIgt; SEM photograph of a-ITO-Ag-ITO three-layer film; FIG. 2 is a SEM photograph showing the surface of the substrate on which the a-ITO-Ag-ITO three was etched using the etchant composition of Example 1. a film and the photoresist are peeled off; FIG. 3 is a SEM photograph showing the damage of the underlayer film observed using the a-ITO-Ag-ITO three-layer film etched using the etchant composition of Example 1. FIG. 4 is a SEM photograph showing a three-layer film of a-ITO-Ag-ITO etched using the etchant composition of Comparative Example 1; FIG. 5 is a SEM photograph showing the surface of the substrate on which the comparison is used. The etchant composition of Example 1 etched the a-ITO-Ag-ITO three-layer film and the photoresist was peeled off; and FIG. 6 shows the a-ITO-etched using the etchant composition of Comparative Example 1. SEM photograph of the damage of the underlying film of the Ag-ITO three-layer film.

Hereinafter, the present invention will be described in detail.

The present invention provides an etchant composition for a single layer film of silver (Ag) or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film, the etchant composition comprising a carboxyl group Heterocyclic compound.

The etchant composition of the present invention is characterized in that it can simultaneously etch a single layer film of silver (Ag) or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film.

In the present invention, the multilayer film composed of a single layer film of silver (Ag) or a silver alloy and an indium oxide film may be a two-layer film of an indium oxide film/silver film, an indium oxide film/silver film/indium oxide. A three-layer film of a film or the like. Further, the indium oxide may be indium tin oxide (ITO), indium zinc oxide (IZO) or the like.

In the etchant composition of the present invention, the heterocyclic compound having a carboxyl group controls re-adsorption of silver clusters when etching 50 or more silver films, thereby affecting the reduction in the number of silver film sheets. A heterocyclic compound having a carboxyl group is added in an amount of 0.1 to 0.8% by weight based on the total weight of the etchant composition. When the amount thereof is more than 0.8% by weight, the silver film is etched unevenly. Further, when the amount thereof is less than 0.1% by weight, the silver clusters are resorbed.

A heterocyclic compound having a carboxyl group is a five to ten dollar having N or O as a hetero atom A heterocyclic compound and may be substituted with an alkyl group of 1 to 10 carbon atoms.

In this case, the number of carboxyl groups may be 1 or 2.

As the heterocyclic compound having a carboxyl group, a pyridine carboxylic acid compound such as pyridinecarboxylic acid (PCA), pyridine dicarboxylic acid (PDCA) or the like can be used.

The above etchant composition may further comprise nitric acid, sulfuric acid, persulfate, phosphate and the balance of water.

In the above etchant composition, nitric acid (HNO3) used as a main oxidizing agent component is used for wet etching of a silver metal film and an indium oxide film by oxidizing a silver metal film and an indium oxide film. The amount of nitric acid is 7.0 to 13.0% by weight based on the total weight of the etchant composition. When the amount of nitric acid is less than 7.0% by weight, the etching rate of the silver film is lowered, and the etching profile of the silver film is deteriorated. Further, when the amount of nitric acid is more than 13.0% by weight, in the case of etching a three-layer film of an indium oxide film/silver film/indium oxide film, the surface of the silver film is caused by excessive etching of the indium oxide film The layer is exposed, causing the problem that silver is separated from the surface of the substrate and then adsorbed thereon by heat treatment of a subsequent process.

In the above etchant composition, sulfuric acid (H2SO4) used as an auxiliary oxide solvent component is added in an amount of 4.5 to 10.5 wt% based on the total weight of the etchant composition. When sulfuric acid is excessively added in an amount of more than 10.5 wt%, the etching length is increased due to a high etching rate, thereby delaying the process. Further, when sulfuric acid is added in an amount of less than 4.5% by weight, the silver film may not be easily etched.

In the above etchant composition, a persulfate serving as an oxidizing agent and a reaction initiator is added in an amount of from 12.0 to 17.0% by weight based on the total weight of the etchant composition. When the amount thereof is more than 17.0% by weight, the indium oxide film is excessively etched. Further, when the amount thereof is less than 12.0% by weight, the etching rate of the silver film may be lowered, and the etching profile of the silver film may be deteriorated.

The persulfate is not particularly limited as long as it is used in the related art. However, it is preferred that the persulfate is any one selected from the group consisting of potassium persulfate (PPS), sodium persulfate (SPS), and ammonium persulfate (APS).

In the above etchant composition, phosphate is used to uniformly etch indium oxide membrane. Phosphate is added in an amount of 0.5 to 4.0% by weight based on the total weight of the etchant composition. When the amount thereof is more than 4.0% by weight, the indium oxide film is etched unevenly. Further, when the amount thereof is less than 0.5% by weight, the etching rate of the indium oxide film may be lowered, and the etching profile of the indium oxide film may be deteriorated.

The phosphate is not particularly limited as long as it is used in the related art and can be dissociated into a phosphate ion in a solution. Preferably, however, the phosphate is selected from the group consisting of ammonium dihydrogen phosphate, sodium dihydrogen phosphate, calcium dihydrogen phosphate, potassium dihydrogen phosphate, diammonium hydrogen phosphate, disodium hydrogen phosphate, calcium hydrogen phosphate, and dipotassium hydrogen phosphate. Any of the groups.

In the etchant composition of the present invention, water is not particularly limited, but deionized water is preferred. Specifically, deionized water having a resistivity of 18 MΩ ‧ cm or more (that is, the degree of removal of ions from water) is more preferable. The water used in the present invention may be contained in a balance such that the total amount of the etchant composition is 100%.

In addition to the above ingredients, the above etchant composition may further contain a conventional additive. As an additive, a surfactant, a chelating agent or an anticorrosive agent can be used.

In the above etchant composition, nitric acid, sulfuric acid, persulfate, phosphate, and a carboxyl group-containing heterocyclic compound can be produced by a conventionally known method. In particular, it is preferred that they have a purity for the semiconductor process.

As described above, since the composition does not use phosphoric acid, iron salts or potassium hydrogen persulfate as the main oxidizing agent, the etchant composition of the present invention can solve the disadvantages of the conventional oxidizing agent to damage the wiring film and can have improved long-term storability. Further, since the composition contains a heterocyclic compound having a carboxyl group, the above etchant composition can solve the problem of re-adsorption of Ag which occurs when etching a silver (Ag) film.

Further, the present invention provides a method of forming a metal pattern, the method comprising the steps of: (i) forming a single layer film selected from silver (Ag) or a silver alloy on a substrate, and forming the single layer film and indium oxide from the substrate At least one of the multilayer films of the film; and (ii) etching the at least one film using the etchant composition of the present invention.

In the method of forming a metal pattern according to the present invention, the step (i) includes the following a step of: providing a substrate; and forming at least one of a single layer film selected from silver (Ag) or a silver alloy and a multilayer film composed of the single layer film and the indium oxide film on the substrate.

A wafer, a glass substrate, a stainless steel substrate, a plastic substrate or a quartz substrate which can be cleaned by a general method can be used as the substrate. The process of forming a single layer film of silver (Ag) or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film on a substrate can be carried out by various methods known to those skilled in the art. Preferably, these films are formed by vacuum deposition or sputtering.

In the step (ii), a photoresist is formed on at least one of the films formed in the step (i), the formed photoresist is selectively exposed using a mask, the exposed photoresist is post-baked, and the post-baked light is then baked. The development is resisted to form a photoresist pattern.

The at least one film provided with the photoresist pattern is etched using the etchant composition of the present invention, thereby completing the metal pattern.

Further, the present invention provides a method of fabricating an array substrate for an organic light emitting display (OLED), the method comprising the steps of: (a) forming a gate on a substrate; (b) on a substrate including the gate Forming a gate insulating layer; (c) forming a semiconductor layer on the gate insulating layer; (d) forming a source and a drain on the semiconductor layer; (e) forming a pixel electrode connected to the drain, wherein At least one of the steps (a), (d) and (e) comprises the steps of: forming a monolayer film selected from the group consisting of silver (Ag) or a silver alloy, and consisting of the monolayer film and the indium oxide film. At least one of the plurality of films; and etching the at least one film using the etchant composition of the present invention to form respective electrodes.

The array substrate for an organic light emitting display (OLED) may be an array substrate for a thin film transistor.

In the method of manufacturing an array substrate for an organic light emitting display (OLED) according to the present invention, the step (a) comprises the step of: (a1) selecting a silver (Ag) or a silver alloy using vapor deposition or sputtering. a single layer film and at least one of the multilayer film composed of the single layer film and the indium oxide film are deposited on the substrate; and (a2) The at least one film is etched with the etchant composition of the present invention to form a gate. Herein, the method of forming the at least one film is not limited thereto.

In the method of manufacturing an array substrate for an organic light emitting display (OLED) according to the present invention, in the step (b), germanium nitride (SiN _x ) is deposited on a gate formed on the substrate to form a gate insulating layer . Herein, the material for forming the gate insulating layer is not limited to germanium nitride (SiN _x ), and the gate insulating layer may be formed using an inorganic insulating material selected from a plurality of cerium oxide (SiO ₂ ).

In the method of manufacturing an array substrate for an organic light emitting display (OLED) according to the present invention, in the step (c), a semiconductor layer is formed on the gate insulating layer using a chemical vapor deposition (CVD) method. That is, an active layer and an ohmic contact layer are sequentially formed, and then patterned by dry etching. Herein, the active layer is generally formed of amorphous germanium (a-Si:H), and the ohmic contact layer is generally formed of amorphous germanium (n+ a-Si:H) containing impurities. These active layers and ohmic contact layers may be formed using a chemical vapor deposition (CVD) method, but the method of forming these layers is not limited thereto.

In the method of manufacturing an array substrate for an organic light emitting display (OLED) according to the present invention, the step (d) includes the steps of: (d1) forming a source and a drain on the semiconductor layer; and (d2) in the An insulating layer is formed on the source and the drain. In the step (d1), at least one of a single layer film selected from silver (Ag) or a silver alloy and a multilayer film composed of the single layer film and the indium oxide film is deposited in an ohmic contact using a sputtering method. The at least one film is then etched using the etchant composition of the present invention to form a source and a drain. Herein, the method of forming at least one film on the substrate is not limited to the above method. In the step (d2), an inorganic insulating material containing cerium nitride (SiN _x ) and cerium oxide (SiO ₂ ) or an organic insulating material containing benzocyclobutene (BCB) and an acrylic resin is used at the source and the bismuth. A single layer or a double layer of insulating layer is formed on the pole. Herein, the raw material of the insulating layer is not limited to the above raw materials.

In the method of manufacturing an array substrate for an organic light emitting display (OLED) according to the present invention, in the step (e), a pixel electrode connected to a drain is formed. example For example, a single layer film selected from silver (Ag) or a silver alloy and at least one of the multilayer film composed of the single layer film and the indium oxide film are deposited using a sputtering method, and then the etchant of the present invention is used. The composition etches the at least one film to form a pixel electrode. The method of depositing the indium oxide film is not limited to the sputtering method.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, these examples are presented to illustrate the invention, and the scope of the invention is not limited thereto.

Preparation of etchant composition

An etchant composition having a weight of 10 kg was prepared using the composition ratios given in Table 1 below.

SPS: sodium persulfate

NHP: sodium hydrogen phosphate

PDCA: Pyridine-2,6-dicarboxylic acid

Test Example 1: Evaluation of etching characteristics

A three-layer film of a-ITO/Ag/ITO was formed on the substrate, which was then cut into a size of 10 × 10 mm using a diamond cutter to form a test sample.

The etchant compositions of Examples 1 to 3 and Comparative Examples 1 to 3 were introduced into an injection type etching test apparatus (manufactured by SEMES), and then based on a set temperature of 30 ° C The etchant composition was heated to 30 ± 0.1 ° C and then subjected to an etching process of the test sample. The etching process is performed with an end point detection (EPD) total etch time including 50% over etch time.

The etched test sample was taken out of the test apparatus, rinsed with deionized water and then dried using a hot air dryer, and then the photoresist was peeled off from the test sample using a photoresist (PR) stripper. Thereafter, a scanning electron microscope (SEM) (S-4700, manufactured by Hitachi, Ltd.) was used to evaluate the etching characteristics of the test samples, such as the side etching rate and the formation speed of the etching residue. The results are given in Table 2 below.

Test Example 2: Evaluation of damage to the lower data line

A three-layer film of a-ITO/Ag/ITO was formed on the substrate, which was then cut into a size of 10 × 10 mm using a diamond cutter to form a test sample.

The etchant compositions of Examples 1 to 3 and Comparative Examples 1 to 3 were introduced into an injection type etching test apparatus (manufactured by SEMES), and then the etchant composition was heated to 30 ± based on a set temperature of 30 ° C. 0.1 ° C, then the etching process of the test sample. Set the total etch time to 5 minutes.

The etched test sample was taken out of the test apparatus, rinsed with deionized water and then dried using a hot air dryer, and then the photoresist was peeled off from the test sample using a photoresist (PR) stripper. Thereafter, a scanning electron microscope (SEM) (S-4700, manufactured by Hitachi, Ltd.) was used to evaluate the etching characteristics of the test sample, such as damage of the lower data line. The results are given in Table 2 below.

As given in Table 2 above, it was confirmed that when the etchant compositions of Examples 1 to 3 and Comparative Examples 1 to 3 were used to etch the a-ITO/Ag/a-ITO substrate, The etch rate and the formation rate of the silver residue show good etching characteristics; when these etchant compositions are used to etch the Mo/Al/Mo substrate, the damage to the lower data line is performed. Good etch characteristics.

1 is a SEM photograph showing a three-layer film of a-ITO-Ag-ITO etched using the etchant composition of Example 1. 2 is a SEM photograph showing the surface of a substrate on which an a-ITO-Ag-ITO three-layer film was etched using the etchant composition of Example 1, and the photoresist was peeled off. 3 is a SEM photograph showing the damage of the underlayer film of the a-ITO-Ag-ITO three-layer film etched using the etchant composition of Example 1. It can be determined from Figure 3 that the underlying film is not damaged.

4 is a SEM photograph showing a three-layer film of a-ITO-Ag-ITO etched using the etchant composition of Comparative Example 1. 5 is a SEM photograph showing the surface of a substrate on which an a-ITO-Ag-ITO three-layer film was etched using the etchant composition of Comparative Example 1, and the photoresist was peeled off.

6 is a SEM photograph showing the damage of the underlayer film observed using the a-ITO-Ag-ITO three-layer film etched using the etchant composition of Comparative Example 1. It can be determined from Fig. 6 that the underlying film is damaged.

As shown in Table 2 above, it was confirmed that when the etchant compositions of Comparative Examples 2 and 3 were used, the lower data lines were damaged because each etchant composition had a large amount of sulfuric acid and PDCA. Further, it was confirmed that when the etchant composition of Comparative Example 1 was used, a silver residue was formed because this etchant composition had a small amount of an oxidizing agent.

Beneficial effect

As described above, the etchant composition of the present invention can play an important role in realizing high resolution, large size, and low power consumption of an organic light emitting display because it is in reducing a single layer film of silver (Ag) or a silver alloy or The side etch rate of the multilayer film composed of the single layer film and the indium oxide film simultaneously exhibits uniform etching characteristics without damaging the lower data lines and forming no residue. Furthermore, since the etchant composition of the present invention does not use phosphoric acid, iron salts or potassium hydrogen persulfate as the main oxidizing agent, it can solve the disadvantage that the conventional oxidizing agent damages the lower data line and can have improved long-term storability. Further, since the composition of the present invention contains a heterocyclic compound having a carboxyl group, it can solve the problem of re-adsorption of Ag which occurs when etching a silver (Ag) film.

While the preferred embodiment of the present invention has been disclosed for the purposes of illustration, it will be understood by those skilled in the art spirit.

Claims (9)

An etchant composition for a single layer film of silver or a silver alloy or a multilayer film composed of the single layer film and an indium oxide film, based on the etchant composition The etchant composition contains 0.1 to 0.8% by weight of a heterocyclic compound having a carboxyl group, based on the total weight. The etchant composition according to claim 1, wherein the heterocyclic compound having a carboxyl group is a five-membered heterocyclic compound having a N or O as a hetero atom to a ten-membered heterocyclic compound, optionally having The heterocyclic compound of a carboxyl group is substituted with an alkyl group of 1 to 10 carbon atoms, and the number of the carboxyl group is 1 or 2. The etchant composition according to claim 1, wherein the heterocyclic compound having a carboxyl group is a pyridine carboxylic acid compound. The etchant composition according to claim 1, further comprising: 7.0 to 13.0% by weight of nitric acid; 4.5 to 10.5% by weight of sulfuric acid; and 12.0 to 17.0% by weight based on the total weight of the etchant composition. Persulfate; 0.5 to 4.0 wt% phosphate; and the balance of water. The etchant composition according to claim 1, wherein the persulfate is any one selected from the group consisting of potassium persulfate, sodium persulfate, and ammonium persulfate. The etchant composition according to claim 1, wherein the phosphate is selected from the group consisting of ammonium dihydrogen phosphate, sodium dihydrogen phosphate, calcium dihydrogen phosphate, potassium dihydrogen phosphate, diammonium hydrogen phosphate, and hydrogen phosphate. Any of the group consisting of sodium, calcium hydrogen phosphate, and dipotassium hydrogen phosphate. A method of forming a metal pattern, the method comprising the steps of: (i) forming at least one of a single layer film selected from silver or a silver alloy and a multilayer film composed of the single layer film and an indium oxide film on a substrate a film; and (ii) using the etchant composition according to any one of claims 1 to 6 to engrave The at least one film is etched. A method of manufacturing an array substrate for an organic light emitting display, the method comprising the steps of: (a) forming a gate on a substrate; (b) forming a gate insulating layer on a substrate including the gate; (c) Forming a semiconductor layer on the gate insulating layer; (d) forming a source and a drain on the semiconductor layer; and (e) forming a pixel electrode connected to the drain, wherein the step (a), At least one of steps d) and (e) includes the steps of: forming a single layer film selected from the group consisting of silver or a silver alloy, and at least one of the multilayer film composed of the single layer film and the indium oxide film; The at least one film is etched to form respective electrodes according to the etchant composition of any one of claims 1 to 6. The method of claim 8, wherein the array substrate for the organic light emitting display is an array substrate for a thin film transistor.