TW201421896A - Clock generator with temperature and process compensation and compensation member thereof - Google Patents

Abstract

A clock generator with temperature and process compensation includes a compensation member, a replica circuit and an oscillation member. The compensation member provides a compensation voltage that varies as the process and the temperature changed to the replica circuit. The replica circuit outputs a control voltage and a current source bias voltage, wherein the control voltage equals to the compensation voltage. The oscillation member electrically connected with the replica circuit and receives the control voltage and the current source bias voltage. The clock generator can output an oscillation signal with a frequency, and the frequency without being effected by process and temperature variation.

Description

Oscillator with process and temperature compensation and its compensating component

The invention relates to an oscillator, in particular to an oscillator with process and temperature compensation.

The conventional oscillator includes: a first setting module, a second setting module, and a flip-flop module. The first setting module includes: a first switching device that generates a first switching signal according to the first oscillation signal, an N-type MOS transistor, and an inverter. The N-type MOS transistor includes a drain for receiving the first charging current and a gate for receiving the first switching signal, wherein the drain is charged or discharged according to the first switching signal. The inverter is connected to the drain to generate a first set signal. The second setting module includes: a second switching device that generates a second switching signal according to the second oscillation signal; and a comparator that generates the second setting signal according to the second switching signal and the reference voltage. The flip-flop module generates first and second oscillation signals according to the first and second setting signals. There is no process compensation or temperature compensation design in the conventional oscillator. Therefore, the signal frequency outputted by the oscillator will be affected by the process and temperature changes, and it is impossible to provide a frequency stable oscillation signal.

The main object of the present invention is to provide an oscillator with process and temperature compensation, wherein the compensation component can provide an oscillation signal whose frequency is not affected by the process and temperature by providing a compensation voltage that varies with process and temperature changes. So that the use of the oscillator can be more extensive.
The invention relates to a process and temperature compensated oscillator comprising a compensation component, a replica circuit and an oscillating component, wherein the compensation component provides a compensation voltage which varies with process and temperature, and the replica circuit is electrically connected to the compensation component And the replica circuit receives the compensation voltage, the replica circuit provides a control voltage and a current source bias, wherein the control voltage is equal to the compensation voltage, the oscillating component is electrically connected to the replica circuit and receives the control voltage and the current The source bias voltage allows the oscillating element to provide an oscillating signal whose frequency is not affected by the process and temperature. The present invention uses the compensation voltage provided by the compensation component to change with the process and temperature changes to the replica circuit, and the replica circuit outputs the control voltage and the current source voltage to the oscillating component as voltage compensation to adjust the oscillation. The frequency of the oscillating signal output by the component allows the oscillating component to output an oscillating signal whose frequency is not affected by the process and temperature.

Referring to FIG. 1 , an oscillator A with process and temperature compensation includes a compensation component 100 , a replica circuit 200 , an oscillating component 300 , a voltage regulator 400 , and a converter 500 . The regulator 400 is electrically The compensation component 100, the replica circuit 200, and the oscillating component 300 are connected. Referring to FIGS. 1 and 5, the regulator 400 is configured to provide a reference voltage V _ref as the compensation component 100, the replica circuit 200, and the oscillation. In the present embodiment, the reference voltage V _ref is a very low 2.2 V voltage signal, which can reduce the sensitivity of the compensation component 100, the replica circuit 200 and the oscillating component 300 to the input power source. Please refer to FIG. 1 , the replica circuit 200 is electrically connected to the compensating component 100 , and the oscillating component 300 is electrically connected to the replica circuit 200 . The converter 500 is electrically connected to the oscillating component 300 . The compensation unit 100 provides a compensation voltage V _COMP with process and temperature changes. Referring to FIGS. 3, 4A and 4B, the replica circuit 200 receives the compensation voltage V _COMP , and the replica circuit 200 provides a control voltage V _CTRL and a current source The bias voltage V _{cs is applied} to the oscillating component 300, wherein the control voltage V _CTRL is equal to the compensation voltage V _COMP , so that the oscillating component 300 can output an oscillating signal V whose frequency is not affected by the process and temperature in various processes or temperatures. _Op /V _on , please refer to FIG. 6 , the converter 500 receives the oscillation signal V _op /V _on , and the converter 500 converts the oscillation signal V _op /V _on into a clock signal V _OUT .
Referring to FIGS. 1 and 2 , the compensation component 100 has a detection unit 110 , an amplification unit 120 , and a compensation unit 130 . The amplification unit 120 is electrically connected to the detection unit 110 , and the compensation component 130 is electrically connected to the The amplifying unit 120, as shown in FIG. 2, has a first load 111, a current mirror 112 and a first transistor 113. The first transistor 113 is a P-type transistor, and the current mirror 112 Electrically connecting the first load 111 and the first transistor 113, and the current mirror 112 has a first current mirror transistor 112a and a second current mirror transistor 112b. The first current mirror transistor 112a is electrically Connecting the first load 111, the second current mirror transistor 112b is electrically connected to the first current mirror transistor 112a and the first transistor 113, so that the current flowing through the first load 111 flows through the first The first load 111 includes at least one first load transistor 111a, and the gate terminal 111b of the first load transistor 111a is electrically connected to the first end 111c of the first load transistor 111a, and The 汲 terminal 111c of the first load transistor 111a is electrically connected to the The current mirror 112 is configured to limit the current flowing through the current mirror 112 to reduce the power consumed by the detecting component 110. The gate electrode 113a of the first transistor 113 is electrically connected to the first electrode 111. a threshold 113b of the transistor 113, and the first electrode 113b of the first transistor 113 is electrically connected to the current mirror 112 and the amplifying unit 120. The threshold voltage of the first transistor 113 will follow the process. And changing with temperature, thereby affecting the magnitude of a detected voltage V _CP outputted by the drain terminal 113b of the first transistor 113.
Referring to FIG. 2 , the amplifying unit 120 has a second load 121 , a current mirror 122 , and a differential pair 123 . The current mirror 122 is electrically connected to the second load 121 and the differential pair 123 . One input 123a of the pair 123 is a positive input 120a of the amplifying unit 120, and the other input 123b of the differential pair 123 is a negative input 120b of the amplifying unit 120, and one output of the differential pair 123 The terminal 123c is an output terminal 120c of the amplifying unit 120. The positive input terminal 120a is electrically connected to the detecting unit 110. The negative input terminal 120b and the output terminal 120c are electrically connected to the compensation unit 130 to form a back. The path of the detection voltage V _CO provided by the output terminal 120c can be obtained by the detection voltage V _CP input from the positive input terminal 120a and the feedback voltage V _FC input from the negative input terminal 120b. Decide.
Referring to FIG. 2 , the compensation unit 130 has a voltage dividing circuit 131 , a second transistor 132 , and a resistor group 133 . The voltage dividing circuit 131 is electrically connected to the output end 120 c of the amplifying circuit 120 . The second transistor 132 is electrically connected to the voltage dividing circuit 131, the negative input terminal 120b of the amplifying unit 120, and the resistor group 133. In this embodiment, the second transistor 132 is a P-type transistor. The source terminal 132c of the second transistor 132 is electrically connected to the voltage dividing circuit 131. The gate terminal 132a of the second transistor 132 is electrically connected to the negative input terminal 120b of the amplifying unit 120. The second transistor 132 The voltage dividing circuit 131 has a first voltage dividing resistor 131a and a second voltage dividing resistor 131b. The compensating element 100 is electrically connected to the resistor group 133 and the gate electrode 132a of the second transistor 132. The voltage dividing circuit 131 has a first voltage dividing resistor 131a and a second voltage dividing resistor 131b. The compensation voltage V _COMP is outputted by the amplification unit 133 and the amplified detection voltage V _CO is outputted by the voltage dividing circuit 131, and is outputted by the voltage dividing circuit 131 to compensate the current I. _CO generation flowing through the feedback voltage V _FC 133 after the second transistor and the resistor group 132, therefore, The compensation voltage V _COMP voltage compensating element provided 100-- temperature characteristic curve of the voltage of the voltage divider circuit 131 - temperature characteristic curve, the second electrical voltage of the aspect ratio of crystal 132 and the resistor 133 of the set - temperature The characteristic curve is related. Therefore, after adjusting the voltage-temperature characteristic curve of the voltage dividing circuit 131, the aspect ratio of the second transistor 132, and the voltage-temperature characteristic curve of the resistor group 133 to an appropriate size, Referring to FIG. 1 , the compensation voltage V _COMP outputted by the compensation component 100 can be compensated for the frequency variation caused by the oscillation component 300 in various processes and different temperatures via the replica circuit 200. Referring to FIG. 2 , The voltage-temperature characteristic curves of the first voltage dividing resistor 131a and the second voltage dividing resistor 131b are negatively correlated, and the voltage-temperature characteristic curve of the resistor group 133 is positively correlated to compensate the oscillating component 300 in various processes and different temperatures. In the present embodiment, the resistor group 133 includes a first resistor 133a and a second resistor 133b. The voltage-temperature characteristic curve of the first resistor 133a is negatively correlated. The voltage-temperature characteristic curve of the resistor 133b is positively correlated. The voltage-temperature characteristic curve of the resistor group 133 is in accordance with the requirements of the present invention by the series connection of the first resistor 133a and the second resistor 133b, thereby making the compensation voltage V _COMP can compensate the frequency of the output signal of the oscillating component 300 under various processes and temperatures.
When the process is slowed down, the threshold voltage of the first transistor 113 rises, and the detection voltage V _CP decreases, thereby making the compensation voltage V _COMP output by the compensation component 100 smaller. The compensation voltage V _COMP can compensate the oscillation signal V _op /V _on which the oscillating element 300 is slowed by the process by adjusting the slope provided by the voltage dividing circuit 131, the second transistor 132 and the resistor group 133. The frequency of the remaining voltages can be affected by the threshold voltage of the first transistor 113 during the remaining various processes (faster, normal, slower, slower, slower). _COMP adjusts the frequency of the oscillation signal V _op /V _on output from the oscillating element 300.
When the temperature rises, the threshold voltage of the first transistor 113 decreases, and the detection voltage V _CP rises, so that the compensation voltage V _COMP output by the compensation component 100 becomes larger, and The voltage divider circuit 131, the second transistor 132, and the resistor group 133 provide slope adjustment, so that the compensation voltage V _COMP can compensate for the frequency of the oscillation signal V _op /V _on which the oscillation component 300 rises faster due to temperature. On the contrary, when the temperature drops, the compensation voltage V _COMP can also be affected by the threshold voltage change of the first transistor 113 to adjust the frequency of the oscillation signal V _op /V _on outputted by the oscillation element 300.
The compensation component 100 outputs the compensation voltage V _COMP to the replica circuit 200, and the replica circuit 200 outputs the control voltage V _CTRL and the current source bias voltage V _cs to the oscillating component 300 for voltage compensation. 300 to adjust the output of the oscillation signal element V _op / V _on the oscillating frequency, the oscillating element 300 may be such that the output frequency of the oscillation signal from process and temperature effects of V _op / V _on.
The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .

A. . . Oven with temperature and temperature compensation

100. . . Compensation component

110. . . Detection unit

111. . . First load

111a. . . First load transistor

111b. . . Gate extreme

111c. . . Extreme

111d. . . Source extreme

112. . . Current mirror

112a. . . First current mirror transistor

112b. . . Second current mirror transistor

113. . . First transistor

113a. . . Gate extreme

113b. . . Extreme

113c. . . Source extreme

120. . . Amplification unit

120a. . . Positive input

120b. . . Negative input

120c. . . Output

121. . . Second load

122. . . Current mirror

123. . . Differential pair

123a. . . Input

123b. . . Input

123c. . . Output

130. . . Compensation unit

131. . . Voltage dividing circuit

131a. . . First voltage divider resistor

131b. . . Second voltage dividing resistor

132. . . Second transistor

132a. . . Gate extreme

132b. . . Extreme

132c. . . Source extreme

133. . . Resistance group

133a. . . First resistance

133b. . . Second resistance

200. . . Copy circuit

300. . . Oscillating element

310. . . Oscillation unit

400. . . Stabilizer

500. . . converter

VDD. . . Input voltage

V _ref . . . Reference voltage

V _COMP. . . Compensation voltage

V _CTRL . . . Control voltage

V _cs . . . Current source bias

V _op . . . Oscillating signal

V _on . . . Oscillating signal

V _CP . . . Detection voltage

V _CO . . . Amplified detection voltage

I _CO . . . Compensation current

V _FC . . . Feedback voltage

Reset. . . Reset signal

V _bias . . . bias

V _OUT . . . Clock signal

Figure 1 is a block diagram of a process and temperature compensated oscillator in accordance with one embodiment of the present invention.
Figure 2 is a circuit diagram of a replica circuit in accordance with an embodiment of the present invention.
Figure 3 is a circuit diagram of a compensating element in accordance with an embodiment of the present invention.
Figure 4A is a circuit diagram of an oscillating element in accordance with an embodiment of the present invention.
Figure 4B is a circuit diagram of an oscillating unit in accordance with an embodiment of the present invention.
Figure 5 is a circuit diagram of a voltage regulator in accordance with an embodiment of the present invention.
Figure 6 is a circuit diagram of a converter in accordance with an embodiment of the present invention.

A. . . Oven with temperature and temperature compensation

100. . . Compensation component

200. . . Copy circuit

300. . . Oscillating element

400. . . Stabilizer

500. . . converter

VDD. . . Input voltage

V _ref . . . Reference voltage

V _COMP . . . Compensation voltage

V _CTRL . . . Control voltage

V _cs . . . Current source bias

V _op . . . Oscillating signal

V _on . . . Oscillating signal

V _OUT . . . Clock signal

Claims (25)

An oscillator with process and temperature compensation, comprising:
a compensating element that provides a compensation voltage that varies with process and temperature;
a replica circuit electrically connected to the compensating component, the replica circuit receiving the compensating voltage, and the replica circuit providing a control voltage and a current source bias, the control voltage being equal to the compensation voltage; and an oscillating component, the electric The replica circuit is connected to receive the control voltage and the current source bias, and the oscillating component provides a signal whose frequency is not affected by the process and temperature. The oscillator and the temperature-compensated oscillator of claim 1, wherein the compensating component has a detecting unit, an amplifying unit and a compensating unit, wherein the amplifying unit is electrically connected to the detecting unit, and the compensating unit The component is electrically connected to the amplifying unit, the detecting unit provides a detecting voltage, the amplifying unit receives the detecting voltage, and the amplifying unit provides an amplified detecting voltage, and the compensating unit receives the amplified detecting voltage, And the compensation unit outputs the compensation voltage. The process and temperature-compensated oscillator of claim 2, wherein the detecting unit has a first load, a current mirror and a first transistor, and the current mirror is electrically connected to the first load. And the first transistor. The process and temperature compensated oscillator of claim 3, wherein the first transistor is a P-type transistor. The process and temperature-compensated oscillator of claim 3, wherein the gate of the first transistor is electrically connected to the first terminal of the first transistor, and the first transistor is connected to the first transistor. The current mirror and the amplifying unit are electrically connected to each other. The process and temperature-compensated oscillator of claim 3, wherein the first load comprises at least one first load transistor, and the gate of the first load transistor is electrically connected to the first load The top of the crystal is extremely extreme, and the first load transistor is electrically connected to the current mirror. The method of claim 2, wherein the amplifying unit has a positive input terminal, a negative input terminal, and an output terminal, wherein the positive input terminal is electrically connected to the detecting unit. The negative input terminal and the output terminal are electrically connected to the compensation unit. The process and temperature-compensated oscillator of claim 7, wherein the compensation unit has a voltage dividing circuit, a second transistor and a resistor group, and the voltage dividing circuit is electrically connected to the amplifier. The output terminal of the circuit is electrically connected to the voltage dividing circuit, the negative input terminal of the amplifying unit, and the resistor group. The process and temperature-compensated oscillator of claim 8, wherein the voltage dividing circuit has a first voltage dividing resistor and a second voltage dividing resistor, the first voltage dividing resistor and the second The voltage-temperature characteristic curve of the voltage dividing resistor is negatively correlated. A process and temperature compensated oscillator as described in claim 8 or 9, wherein the voltage-temperature characteristic curve of the resistor group is positively correlated. The process and temperature-compensated oscillator of claim 10, wherein the resistor group includes a first resistor and a second resistor, and the voltage-temperature characteristic curve of the first resistor is negatively correlated. The voltage-temperature characteristic curve of the two resistors is positively correlated. The process and temperature-compensated oscillator of claim 8, wherein the second transistor is a P-type transistor, and the source of the second transistor is electrically connected to the voltage dividing circuit. The gate of the second transistor is electrically connected to the negative input terminal of the amplifying unit, and the second transistor is electrically connected to the resistor group and the gate terminal of the second transistor. The oscillator of the process and temperature compensation according to claim 1 , further comprising a voltage regulator for providing a reference voltage, wherein the voltage regulator is electrically connected to the compensation component, the replica circuit and The oscillating element. The oscillator of the process and temperature compensation according to claim 1, further comprising a converter electrically connected to the oscillating component, wherein the converter is configured to provide a clock signal. A compensating element for providing a compensation voltage that varies with process and temperature, the compensating element comprising:
a detecting unit that provides a detecting voltage;
An amplifying unit electrically connected to the detecting unit, the amplifying unit receives the detecting voltage, and the amplifying unit provides an amplified detecting voltage; and a compensation unit electrically connected to the amplifying unit, the compensating unit The amplified detection voltage is received, and the compensation unit outputs a compensation voltage. The compensation component of claim 15, wherein the detecting unit has a first load, a current mirror and a first transistor, the current mirror electrically connecting the first load and the first transistor . The compensating element of claim 16, wherein the first transistor is a P-type transistor. The compensating component of claim 16 or 17, wherein the gate of the first transistor is electrically connected to the 汲 terminal of the first transistor, and the 电 of the first transistor is electrically connected to the current. Mirror and the amplification unit. The compensating component of claim 16, wherein the first load comprises at least one first load transistor, and the gate of the first load transistor is electrically connected to the 汲 terminal of the first load transistor, and The first load transistor is electrically connected to the current mirror. The compensating component of claim 15, wherein the amplifying unit has a positive input terminal, a negative input terminal and an output terminal, wherein the positive input terminal is electrically connected to the detecting unit, the negative input terminal and The output is electrically connected to the compensation unit. The compensating unit of claim 20, wherein the compensating unit has a voltage dividing circuit, a second transistor and a resistor group, and the voltage dividing circuit is electrically connected to the output end of the amplifying circuit. The second transistor is electrically connected to the voltage dividing circuit, the negative input terminal of the amplifying unit, and the resistor group. The compensating component of claim 21, wherein the voltage dividing circuit has a first voltage dividing resistor and a second voltage dividing resistor, and the voltage of the first voltage dividing resistor and the second voltage dividing resistor - The temperature characteristic curve is negatively correlated. The compensating element of claim 21 or 22, wherein the voltage-temperature characteristic curve of the resistor group is positively correlated. The compensating component of claim 23, wherein the resistor group comprises a first resistor and a second resistor, wherein the voltage-temperature characteristic curve of the first resistor is negatively correlated, and the voltage-temperature of the second resistor The characteristic curve is positively correlated. The compensating component of claim 21, wherein the second transistor is a P-type transistor, and the source of the second transistor is electrically connected to the voltage dividing circuit, and the gate of the second transistor The output terminal of the amplifier is electrically connected to the amplifier, and the second transistor is electrically connected to the resistor group and the gate of the second transistor.