TW201420252A - High-temperature lead-free solder ball - Google Patents

High-temperature lead-free solder ball Download PDF

Info

Publication number
TW201420252A
TW201420252A TW101144716A TW101144716A TW201420252A TW 201420252 A TW201420252 A TW 201420252A TW 101144716 A TW101144716 A TW 101144716A TW 101144716 A TW101144716 A TW 101144716A TW 201420252 A TW201420252 A TW 201420252A
Authority
TW
Taiwan
Prior art keywords
solder ball
core layer
cladding layer
free solder
layer
Prior art date
Application number
TW101144716A
Other languages
Chinese (zh)
Other versions
TWI485026B (en
Inventor
Tian-Ding Chen
Original Assignee
Accurus Scient Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Accurus Scient Co Ltd filed Critical Accurus Scient Co Ltd
Priority to TW101144716A priority Critical patent/TWI485026B/en
Publication of TW201420252A publication Critical patent/TW201420252A/en
Application granted granted Critical
Publication of TWI485026B publication Critical patent/TWI485026B/en

Links

Abstract

This invention discloses a high-temperature lead-free solder ball having a diameter of 10μm-1000μm and comprising a core layer that contains zinc. Preferably, the core layer further comprises 0.01-20wt% of aluminum, 0.01-12wt% of copper, or a combination of them. More preferably, the content of aluminum is 4wt%. Further, the core layer is provided with at least one coating layer at its exterior to enhance the wettability, solderability, oxidation resistance, and mechanical properties of the of the solder ball. The improvement of the present invention is mainly made possible by using zinc as the main material of the core layer, due to the fact that the zinc is nontoxic, non-polluting, and its melting temperature is greater than 260 DEG C, meeting the high-temperature requirements. It can indeed serve as a good material for package intervals balls and can improve the solder reliability between electronic components.

Description

高溫無鉛焊接球 High temperature lead-free solder ball

本發明是有關於一種焊接球,特別是指一種高溫無鉛焊接球。 The invention relates to a solder ball, in particular to a high temperature lead-free solder ball.

錫球廣泛應用於電子封裝模組中,透過錫球可將電子元件與印刷電路板或基板隔著一預定間距而接合,乃相當電子元件之間的接合劑與間隔件(spacer)。 Tin balls are widely used in electronic package modules. The solder balls can be used to bond electronic components to a printed circuit board or substrate at a predetermined interval, which is equivalent to a bonding agent and a spacer between electronic components.

構裝使用於第一層級的接合材料,由於直接與矽晶粒(Silicon Die)連結,屬於產品最內層的封裝,環境溫度較外層高,並且為了避免被第二、三層級之接合過程如迴焊(Reflow)、波焊(Wave Soldering)等步驟所影響,一旦材料熔點不夠高,第一層級的接點甚至會在第二、三層級接合步驟的過程中失效,因此目前第一層級的接合都是使用較高熔點(260℃以上)的材料,依照不同的構裝技術選擇適當的材料,其中包括黏晶(Die attach)、覆晶(Flip Chip)接合等技術都屬於第一層級的構裝技術。 The bonding material used in the first level is directly encapsulated with the Silicon Die, belonging to the innermost layer of the product, the ambient temperature is higher than the outer layer, and in order to avoid the bonding process of the second and third layers, Reflow, Wave Soldering and other steps, once the melting point of the material is not high enough, the first level of joints will even fail during the second and third level bonding steps, so the current first level Bonding is to use a material with a higher melting point (above 260 ° C), according to different packaging techniques to select the appropriate materials, including die attach (die attach), flip chip (Flip Chip) bonding and other technologies are first-level Construction technology.

黏晶是指將矽晶粒接合固定在構裝基板或導線架的晶片承載座之製程之後,使用打線接合(Wire Bonding)完成電路的連線。常用材料有軟質合金(Soft Solder)的Pb-5Sn、硬質合金(Hard Solder)的Au-20Sn及Au-Si、高分子膠等材料。 The die bond refers to the process of bonding the die to the wafer carrier of the package substrate or the lead frame, and wire bonding is completed by wire bonding. Commonly used materials include Pb-5Sn of Soft Solder, Au-20Sn and Au-Si of Hard Solder, and polymer glue.

而覆晶接合則是1960年代由美國IBM發展的接合技術,跟打線接合不同的地方在於覆晶接合提供高密度的面 陣列(Area Array),接點密度遠大於打線接合的周列式(Peripheral Array),係先在晶粒之焊墊上生成焊錫凸塊(Solder Bump),將焊錫凸塊對準構裝基板的接墊,以迴焊的方式配合焊錫熔融時之表面張力效應使焊錫成球而完成晶片與基板的接合。常見的凸塊成份有Pb-5Sn、Sn-37Pb及Pb-50In合金。 The flip chip bonding is a bonding technology developed by IBM in the United States in the 1960s. The difference from the wire bonding is that the flip chip bonding provides a high density surface. Array (Area Array), the junction density is much larger than the Peripheral Array, the solder bump is generated on the pad of the die, and the solder bump is aligned with the package substrate. The pad is re-welded to match the surface tension effect of the solder melting, so that the solder is balled to complete the bonding of the wafer to the substrate. Common bump components are Pb-5Sn, Sn-37Pb and Pb-50In alloys.

除了黏晶及覆晶接合等技術,還有許多應用因環境特別而需要使用到高溫焊接球,像是光電元件、汽車電子元件等,而熔點溫度可達260℃以上的焊接球,可稱為高溫焊接球。目前已知的高溫焊接球通常以鉛作為球心材料,並於球心外包覆錫,使用鉛雖然可以達到高溫要求,但由於鉛具有毒性,對於生態環境破壞性較大。另外有一種無鉛材料即為前述的金錫合金,但使用金的成本較高。因此,基於環保、健康與成本等因素的考量,有必要開發出一種不含鉛但又可達到高熔點需求的焊接球。 In addition to technologies such as die bonding and flip chip bonding, there are many applications where high-temperature solder balls, such as photovoltaic components, automotive electronic components, etc., which require a melting point temperature of 260 ° C or higher, can be called. High temperature solder balls. Currently known high-temperature solder balls usually use lead as the core material and tin on the outer core. Although lead can reach high temperature requirements, lead is poisonous and has a great destructive effect on the ecological environment. Another type of lead-free material is the aforementioned gold-tin alloy, but the cost of using gold is higher. Therefore, based on factors such as environmental protection, health and cost, it is necessary to develop a solder ball that does not contain lead but can reach high melting point requirements.

因此,本發明之目的,即在提供一種兼具環保無毒與高溫需求,且成本較低的高溫無鉛焊接球。 Therefore, the object of the present invention is to provide a high-temperature lead-free solder ball which is environmentally friendly, non-toxic and high-temperature, and which is low in cost.

於是,本發明高溫無鉛焊接球,直徑為10μm~1000μm,並包含一個以鋅為主要成分的核心層。 Therefore, the high-temperature lead-free solder ball of the present invention has a diameter of 10 μm to 1000 μm and contains a core layer mainly composed of zinc.

較佳地,該核心層還包含0.01~20wt%的鋁、0.01~12wt%的銅,或此等之一組合。更佳地,鋁的含量為4wt%。 Preferably, the core layer further comprises 0.01 to 20 wt% of aluminum, 0.01 to 12 wt% of copper, or a combination thereof. More preferably, the aluminum content is 4% by weight.

較佳地,該核心層還包含0.01~5wt%的鍺、0.01~5wt% 的鎵、0.01~1wt%的鎂、0.01~1wt%的鈦、0.01~1wt%的鉻,或此等之一組合。 Preferably, the core layer further comprises 0.01 to 5 wt% of ruthenium, 0.01 to 5 wt%. Gallium, 0.01 to 1 wt% magnesium, 0.01 to 1 wt% titanium, 0.01 to 1 wt% chromium, or a combination thereof.

較佳地,本發明高溫無鉛焊接球還包含一包覆於該核心層外的第一包覆層,其材料為錫、銅或鎳。 Preferably, the high temperature lead-free solder ball of the present invention further comprises a first cladding layer coated on the outside of the core layer, the material of which is tin, copper or nickel.

較佳地,本發明高溫無鉛焊接球還包含一包覆於該第一包覆層外的第二包覆層,該第二包覆層為錫、銀、含鎳之錫合金、含鈷之錫合金、含鐵之錫合金,或此等之一組合。 Preferably, the high-temperature lead-free solder ball of the present invention further comprises a second cladding layer coated on the outside of the first cladding layer, the second cladding layer being tin, silver, tin alloy containing nickel, and cobalt-containing Tin alloy, iron-containing tin alloy, or a combination of these.

較佳地,本發明高溫無鉛焊接球還包含一位於該第一包覆層與該第二包覆層之間的接合層,該接合層包含鎳。 Preferably, the high temperature lead-free solder ball of the present invention further comprises a bonding layer between the first cladding layer and the second cladding layer, the bonding layer comprising nickel.

本發明之功效:藉由鋅作為該核心層的主要材料,相對於以往使用金的成本較低,且由於鋅無毒、無污染,且其熔點大於260℃而符合高溫要求,確實能作為良好的封裝間隔球之材料,並能提升電子元件間的焊接可靠度。此外,設置該第一包覆層與該第二包覆層可提升焊接球的潤溼性、可焊性、抗氧化性、機械性能,設置該接合層則有助於該第二包覆層之附著。 The effect of the invention: zinc is used as the main material of the core layer, and the cost of using gold is lower than that of the prior, and since zinc is non-toxic and non-polluting, and its melting point is higher than 260 ° C and meets the high temperature requirement, it can be regarded as good. The material of the spacer ball is packaged and the soldering reliability between the electronic components can be improved. In addition, the first cladding layer and the second cladding layer can improve the wettability, solderability, oxidation resistance and mechanical properties of the solder ball, and the bonding layer is provided to facilitate the second cladding layer. Attached.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之數個較佳實施例與數個實驗例的詳細說明中,將可清楚的呈現。在本發明被詳細描述前,要注意的是,在以下的說明內容中,類似的元件是以相同的編號來表示。 The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments and the embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.

參閱圖1,本發明高溫無鉛焊接球之第一較佳實施例包 含:一核心層1,及一包覆於該核心層1外的第一包覆層2。本發明之高溫無鉛焊接球主要是指熔點260℃以上的焊接球。 Referring to Figure 1, a first preferred embodiment of the high temperature lead-free solder ball of the present invention is packaged. And comprising: a core layer 1 and a first cladding layer 2 coated on the outside of the core layer 1. The high-temperature lead-free solder ball of the present invention mainly refers to a solder ball having a melting point of 260 ° C or higher.

本實施例之核心層1大致呈球狀,其材料包含鋅(Zn),實際上可以完全使用鋅,或者也可以鋅為主要成分並添加其它材料。所謂以鋅為主要成分乃為相對多數的概念,是指該核心層1中,鋅的重量百分比(wt%)大於其它任何一種添加材料的重量百分比。當該核心層1的重量為100 wt%時,該核心層1進一步還可以包含0.01~20wt%的鋁(Al)、0.01~12wt%的銅(Cu),或此等之一組合,即,該核心層1可額外添加鋁或銅,或同時添加鋁與銅。更進一步地,該核心層1還可包含0.01~5wt%的鍺(Ge)、0.01~5wt%的鎵(Ga)、0.01~1wt%的鎂(Mg)、0.01~1wt%的鈦(Ti)、0.01~1wt%的鉻(Cr),或此等之一組合,即,該核心層1可額外添加鍺、鎵、鎂、鈦、鉻中的任一種或兩種以上。 The core layer 1 of the present embodiment is substantially spherical, and its material contains zinc (Zn). In fact, zinc may be completely used, or zinc may be used as a main component and other materials may be added. The concept that zinc is the main component and is a relatively large majority means that the weight percentage (wt%) of zinc in the core layer 1 is greater than the weight percentage of any other additive materials. When the weight of the core layer 1 is 100 wt%, the core layer 1 may further contain 0.01 to 20 wt% of aluminum (Al), 0.01 to 12 wt% of copper (Cu), or a combination thereof. The core layer 1 may be additionally added with aluminum or copper, or both aluminum and copper. Further, the core layer 1 may further comprise 0.01 to 5 wt% of germanium (Ge), 0.01 to 5 wt% of gallium (Ga), 0.01 to 1 wt% of magnesium (Mg), and 0.01 to 1 wt% of titanium (Ti). Between 0.01 and 1 wt% of chromium (Cr), or a combination of the above, that is, the core layer 1 may be additionally added with any one or more of yttrium, gallium, magnesium, titanium, and chromium.

本發明以鋅作為該核心層1的主要成分,是因為鋅的熔點約為420℃,具有硬度高、無毒、無污染之優點,同時符合焊接球之高溫要求,因此適用於作為核心層1的材料。另外,當該核心層1添加鋁、銅、鍺、鎵、鎂、鈦、鉻的其中一種或兩種以上材料而形成鋅合金時,都具有降低合金熔點(但仍符合高溫需求)的功效,而且可提升鋅合金的結構強度、硬度、合金抗氧化性或潤溼性。 The invention uses zinc as the main component of the core layer 1 because the melting point of zinc is about 420 ° C, and has the advantages of high hardness, non-toxicity and no pollution, and meets the high temperature requirement of the solder ball, so it is suitable for the core layer 1 . material. In addition, when the core layer 1 is added with one or more materials of aluminum, copper, lanthanum, gallium, magnesium, titanium, and chromium to form a zinc alloy, it has the effect of lowering the melting point of the alloy (but still meeting the high temperature requirement). Moreover, the structural strength, hardness, alloy oxidation resistance or wettability of the zinc alloy can be improved.

其中,以添加鋁為例,該核心層1可以包含0.01wt%~20wt%的鋁,較佳地包含4wt%的鋁。當該核心層1含有適 量的鋁時,鋁和鋅形成的鋁鋅共晶(eutectic)合金可以降低合金熔點,例如,添加4wt%的鋁時,該核心層1的熔點可降至390℃,並且可提升該核心層1之合金硬度,如此可以使該核心層1在符合高溫需求的同時,還能降低製作成本。此乃因為該核心層1在製作上必須使其材料受到高溫而呈熔融態,才能塑型成所須尺寸的球狀體。若該核心層材料的熔點溫度過高時,要將材料加熱至熔融態並作成球狀,需要耗費較長的加熱時間與消耗較多的製程能量,因此本發明在使該核心層1符合焊接球之高溫需求的同時,較佳地該核心層1的熔點不需要太高,如此可降低製作成本。 Wherein, in the case of adding aluminum, the core layer 1 may comprise 0.01 wt% to 20 wt% of aluminum, preferably 4 wt% of aluminum. When the core layer 1 contains appropriate In the case of aluminum, an aluminum-zinc eutectic alloy formed of aluminum and zinc can lower the melting point of the alloy. For example, when 4 wt% of aluminum is added, the melting point of the core layer 1 can be lowered to 390 ° C, and the core layer can be raised. The alloy hardness of 1 can make the core layer 1 meet the high temperature requirement and reduce the manufacturing cost. This is because the core layer 1 must be made into a molten state at a high temperature in order to be molded into a spherical body of a desired size. If the melting point temperature of the core layer material is too high, the material is heated to a molten state and formed into a spherical shape, which requires a long heating time and consumes a large amount of process energy. Therefore, the present invention conforms the core layer 1 to welding. At the same time as the high temperature requirement of the ball, it is preferable that the melting point of the core layer 1 does not need to be too high, so that the manufacturing cost can be reduced.

此外,該核心層1添加銅可增加合金的硬度和強度、改善合金的抗磨損性能、減少晶間腐蝕。添加鎂和鈦可減少晶間腐蝕、細化合金組織、改善合金的抗磨損性能。添加鍺、鎵可提升合金之抗氧化、抗色變能力,而且鍺與鎵具有良好的熱與電傳導性能,可潤溼大部分的金屬與氧化物,從而提升潤溼性與可焊性。添加鉻則可提升合金抗氧化性及硬度。 In addition, the addition of copper to the core layer 1 increases the hardness and strength of the alloy, improves the wear resistance of the alloy, and reduces intergranular corrosion. The addition of magnesium and titanium reduces intergranular corrosion, refines the alloy structure, and improves the wear resistance of the alloy. The addition of bismuth and gallium enhances the oxidation and color resistance of the alloy, and the bismuth and gallium have good thermal and electrical conductivity, which can wet most of the metals and oxides, thereby improving wettability and solderability. The addition of chromium increases the oxidation resistance and hardness of the alloy.

該第一包覆層2可以利用但不限於滾鍍(barrel plating)的方式形成,進而將該核心層1完整包覆於其中。該第一包覆層2的材料為錫(Sn)、銅或鎳(Ni),使用銅作為包覆材料是因為銅的導電性佳,可作為電子元件之間良好的電連接體。而且銅可以與該核心層1中的游離態鋅原子形成介金屬化合物(IMC),以降低鋅的活性,避免鋅的表面氧化,並可降低熔融焊料的表面張力,提高焊料的潤溼性與抗氧 化性。另外,該第一包覆層2使用錫、銅或鎳等材料,還可以降低迴焊(reflow)製程焊接溫度,同時降低該核心層1與基板焊接材的擴散速率,從而提升該核心層1與基板焊接材的接合介面強度,具有較高的潤濕性及可焊性。 The first cladding layer 2 can be formed by, but not limited to, barrel plating, thereby completely encapsulating the core layer 1 therein. The material of the first cladding layer 2 is tin (Sn), copper or nickel (Ni), and copper is used as a cladding material because copper has good conductivity and can be used as a good electrical connection between electronic components. Moreover, copper can form a metal intermetallic compound (IMC) with the free zinc atoms in the core layer 1 to reduce the activity of zinc, avoid surface oxidation of zinc, lower the surface tension of the molten solder, and improve the wettability and resistance of the solder. oxygen Chemical. In addition, the first cladding layer 2 uses a material such as tin, copper or nickel, and can also reduce the reflow soldering temperature, and at the same time reduce the diffusion rate of the core layer 1 and the substrate solder material, thereby improving the core layer 1 The bonding interface strength with the substrate solder material has high wettability and solderability.

本發明的主要改良在於:以鋅作為該核心層1的主要材料,相對於以往使用鉛而言,具備無毒、無污染之優點,相對於以往使用金而言,則具有成本低的優點。而且鋅的熔點大於260℃而符合高溫要求,能滿足第一層級黏晶、覆晶接合等封裝要求,不僅可應用於一般的球柵陣列(Ball Grid Array,簡稱BGA)封裝,還可應用於例如堆疊(Stacked Package on Package,簡稱PoP)封裝之較高階的三維立體(3D)封裝,可作為間隔球以維持元件間高度,並提升封裝元件可靠度。另外,該核心層1本身即可單獨作為焊接球,本發明不以設置該第一包覆層2為必要。焊接時會將焊料及助熔劑塗布在焊接球周圍,使焊接球能焊固於電子元件與基板或印刷電路板之間。 The main improvement of the present invention is that zinc is used as the main material of the core layer 1, and it has the advantages of being non-toxic and non-polluting with respect to the conventional use of lead, and has an advantage of low cost compared with the conventional use of gold. Moreover, the melting point of zinc is greater than 260 ° C and meets the high temperature requirements, which can meet the packaging requirements of the first level of die bonding, flip chip bonding, etc., and can be applied not only to a general ball grid array (BGA) package but also to a ball grid array (BGA) package. For example, a higher-order three-dimensional (3D) package of a stacked package on package (PoP) package can be used as a spacer ball to maintain the height between components and improve the reliability of package components. In addition, the core layer 1 itself can be used alone as a solder ball, and the present invention is not necessary to provide the first cladding layer 2. Soldering and flux are applied around the solder balls during soldering to allow solder balls to be soldered between the electronic components and the substrate or printed circuit board.

本發明高溫無鉛焊接球整體的直徑為10μm~1000μm,此大小之焊接球可提供電子元件與基板或電路板適當之間隔距離,符合一般所須的間隔要求。 The high-temperature lead-free solder ball of the present invention has a diameter of 10 μm to 1000 μm as a whole, and the solder ball of this size can provide an appropriate distance between the electronic component and the substrate or the circuit board, which meets the required interval requirements.

參閱圖2,本發明高溫無鉛焊接球之第二較佳實施例與該第一較佳實施例的結構大致相同,不同的地方在於:本實施例還包含:一包覆於該第一包覆層2外的第二包覆層3,該第二包覆層3將該第一包覆層2完整包覆於其中,其材料為錫、銀(Ag)、含鎳(Ni)之錫合金、含鈷(Co)之錫合金 、含鐵(Fe)之錫合金,或此等之一組合。本實施例額外增加該第二包覆層3,可用於與該第一包覆層2配合,使該核心層1外形成雙層包覆,以降低迴焊製程焊接溫度,同時降低該核心層1與基板焊接材的擴散速率,從而提升該核心層1與基板焊接材的接合介面強度,具有較高的潤濕性及可焊性。 Referring to FIG. 2, the second preferred embodiment of the high-temperature lead-free solder ball of the present invention is substantially the same as the structure of the first preferred embodiment. The difference is that the embodiment further includes: a coating on the first cladding a second cladding layer 3 outside the layer 2, the second cladding layer 3 completely covering the first cladding layer 2 therein, the material of which is tin, silver (Ag), tin alloy containing nickel (Ni) , tin alloy containing cobalt (Co) A tin alloy containing iron (Fe), or a combination of these. In this embodiment, the second cladding layer 3 is additionally added, and can be used to cooperate with the first cladding layer 2 to form a double coating on the outer layer of the core layer 1 to reduce the reflow soldering temperature and reduce the core layer 1 The diffusion rate of the solder material with the substrate improves the bonding interface strength of the core layer 1 and the substrate solder material, and has high wettability and solderability.

該第二包覆層3可以利用但不限於滾鍍(barrel plating)的方式形成,滾鍍方式可以使該第二包覆層3均勻地包覆該第一包覆層2。設置該第二包覆層3的另一優點為:正因為第二包覆層3可提升焊接球的可焊性,所以進行焊接作業的組裝者不須額外再於焊接球外塗上錫來幫助焊接,而且實際上要另外塗上錫並不容易均勻塗布。因此本實施例直接以滾鍍方式形成該第二包覆層3,應用上更加方便並具有組裝優勢。 The second cladding layer 3 can be formed by, but not limited to, barrel plating, and the second cladding layer 3 can uniformly coat the first cladding layer 2 by a barrel plating method. Another advantage of providing the second cladding layer 3 is that because the second cladding layer 3 can improve the solderability of the solder ball, the assembler performing the soldering operation does not need to additionally apply tin to the solder ball. It helps to weld, and in fact it is not easy to apply evenly to apply tin. Therefore, in this embodiment, the second cladding layer 3 is directly formed by barrel plating, which is more convenient in application and has assembly advantages.

此外,銅與錫的合金相有Cu3Sn與Cu6Sn5,因此該第二包覆層3為錫時,易於與該第一包覆層2的銅形成Cu3Sn與Cu6Sn5之介金屬化合物。根據研究證實,由於Cu3Sn的材料特性較脆,若焊接球中存有過多的Cu3Sn時,則在電子產品操作時所產生的元件振動或電子產品不慎摔落地面時,焊點處容易從Cu3Sn介面形成斷面而剝落,因此過多的Cu3Sn會影響焊接點的接合強度。但是當第二包覆層3的材料使用含鎳之錫合金時(於錫為主體的材料中摻雜鎳,即Ni-doped Sn),鎳的添加可以幫助Cu6Sn5形成,從而抑制Cu3Sn的生成,使Cu3Sn厚度變薄,如此即有利於提升 焊接球及焊接部位的結構強度,從而提升電子產品的可靠度與耐用性。 In addition, the alloy phase of copper and tin has Cu 3 Sn and Cu 6 Sn 5 , so when the second cladding layer 3 is tin, it is easy to form Cu 3 Sn and Cu 6 Sn 5 with the copper of the first cladding layer 2 . a metal compound. According to research, it is confirmed that the material properties of Cu 3 Sn are brittle. If there is excessive Cu 3 Sn in the solder ball, the solder joints may occur when the component vibration or electronic product generated during the operation of the electronic product falls to the ground. Since it is easy to form a cross section from the Cu 3 Sn interface and peel off, excessive Cu 3 Sn affects the joint strength of the solder joint. However, when the material of the second cladding layer 3 is a tin alloy containing nickel (doped nickel in a material mainly composed of tin, that is, Ni-doped Sn), the addition of nickel can help Cu 6 Sn 5 to form, thereby suppressing Cu. 3 The formation of Sn makes the thickness of Cu 3 Sn thin, which is beneficial to improve the structural strength of the solder ball and the solder joint, thereby improving the reliability and durability of the electronic product.

參閱圖3,本發明高溫無鉛焊接球之第三較佳實施例與該第二較佳實施例的結構大致相同,不同的地方在於:本實施例還包含:一位於該第一包覆層2與該第二包覆層3之間的接合層4。該接合層4用於提升該第二包覆層3與該第一包覆層2之間的結合力,以幫助該第二包覆層3附著。該接合層4的材料包含鎳,亦有助於提升焊接球的整體結構強度。當該第二包覆層3的材料為錫、該第一包覆層2的材料為銅時,該接合層4的鎳可以用於防止錫與銅相互擴散而反應。另一方面,即使銅與錫仍有部分擴散現象,但如同上述,鎳有助於抑制Cu3Sn的生成,進而可提升焊接球的結構強度。當然,當該第二包覆層3的材料為鎳時,此時自然不需要再使用鎳製成的接合層4。 Referring to FIG. 3, the third preferred embodiment of the high-temperature lead-free solder ball of the present invention is substantially the same as the structure of the second preferred embodiment. The difference is that the embodiment further includes: a first cladding layer 2 a bonding layer 4 with the second cladding layer 3. The bonding layer 4 is used to lift the bonding force between the second cladding layer 3 and the first cladding layer 2 to help the second cladding layer 3 to adhere. The material of the bonding layer 4 contains nickel, which also helps to enhance the overall structural strength of the solder ball. When the material of the second cladding layer 3 is tin and the material of the first cladding layer 2 is copper, the nickel of the bonding layer 4 can be used to prevent the mutual diffusion of tin and copper to react. On the other hand, even if copper and tin still partially diffuse, as described above, nickel contributes to suppressing the formation of Cu 3 Sn, and the structural strength of the welded ball can be improved. Of course, when the material of the second cladding layer 3 is nickel, it is naturally unnecessary to use the bonding layer 4 made of nickel.

具體而言,本發明之核心層1的直徑可以為10μm~800μm,該第一包覆層2的厚度可以為1μm~50μm,該接合層4的厚度可以為1μm~50μm,該第二包覆層3的厚度可以為1μm~50μm。但上述厚度僅為舉例,不作為本發明之限制。而且無論本發明包含幾層層體,該高溫無鉛焊接球整體的直徑為10μm~1000μm。 Specifically, the core layer 1 of the present invention may have a diameter of 10 μm to 800 μm, the first cladding layer 2 may have a thickness of 1 μm to 50 μm, and the bonding layer 4 may have a thickness of 1 μm to 50 μm. The thickness of the layer 3 may be from 1 μm to 50 μm. However, the above thickness is merely an example and is not intended to be a limitation of the present invention. Moreover, regardless of the fact that the present invention comprises several layers, the high-temperature lead-free solder ball has a diameter of 10 μm to 1000 μm as a whole.

接著透過本發明的數個實驗例與數個比較例來證實本發明的功效。 Next, the effects of the present invention were confirmed by several experimental examples and several comparative examples of the present invention.

參閱表1,表中的「核心層硬度」的測試方式是採用標準的維氏硬度測試方法。而「整體組裝性」是以組裝良率 判斷,以組裝1000個焊接球為例,觀察是否有無法組裝之狀況,無法組裝的球愈少時,缺陷率愈低,即代表良率愈高。其中的「佳」代表組裝良率高於99.5%,「優良」代表組裝良率高於99.9%。在此所謂的組裝意指焊接球能否焊接固定於一物體上,本實驗的該物體為一銅焊墊。 Referring to Table 1, the "core layer hardness" test method is based on the standard Vickers hardness test method. And "integral assembly" is the assembly yield. Judging, taking 1000 welding balls as an example, observing whether there is a situation in which assembly is impossible, and the fewer the balls that cannot be assembled, the lower the defect rate, that is, the higher the yield. Among them, "good" means that the assembly yield is higher than 99.5%, and "excellent" means that the assembly yield is higher than 99.9%. The so-called assembly means that the solder ball can be soldered and fixed on an object. The object in this experiment is a copper pad.

由表1可看出本發明的實驗例1~17,使用Zn核心層的熔點為420℃,符合高溫焊接球的熔點要求,在此同時該核心層硬度可達到55Hv左右,具有足夠的硬度(一般來說,硬度約大於20Hv即足夠),同時亦具備極高的組裝良率,表示本發明焊接球以Zn作為核心層的主要成分,確實可達到焊接球的各種條件要求。 It can be seen from Table 1 that the experimental examples 1 to 17 of the present invention have a melting point of 420 ° C using a Zn core layer, which meets the melting point requirements of the high-temperature welded ball, and at the same time, the core layer has a hardness of about 55 Hv and has sufficient hardness ( In general, the hardness is more than about 20Hv, which is sufficient, and also has a very high assembly yield. It means that the solder ball of the present invention uses Zn as the main component of the core layer, and can indeed meet various conditions of the solder ball.

參閱表2,表中的「Zn-4Al」是代表該核心層包含4wt%的Al,餘量為Zn;同理,「Zn-20Al」是代表該核心層包含20wt%的Al,餘量為Zn。由表2的各實驗例可看出,當該核心層添加4wt%的Al時,由於ZnAl的共晶合金生成,使該核心層的熔點降至390℃。且該核心層的強度增加到84Hv,由此可見,添加適量的Al有助於降低核心層熔點而降低製造成本,同時可提升結構強度。 Referring to Table 2, the "Zn-4Al" in the table means that the core layer contains 4 wt% of Al and the balance is Zn. Similarly, "Zn-20Al" means that the core layer contains 20 wt% of Al, and the balance is Zn. As can be seen from the respective experimental examples of Table 2, when 4% by weight of Al was added to the core layer, the melting point of the core layer was lowered to 390 ° C due to the formation of a eutectic alloy of ZnAl. Moreover, the strength of the core layer is increased to 84 Hv, and thus it can be seen that the addition of an appropriate amount of Al helps to lower the melting point of the core layer and lower the manufacturing cost, and at the same time, the structural strength can be improved.

參閱表3,由實驗例25、37~39可看出,該核心層中的鋁含量在本發明限定的0.01wt%~20wt%之間時,核心層熔點與硬度乃符合需求,而其中又以實驗例25之4wt%的鋁 含量可達到最佳的降低熔點與提升結構強度之功效。反觀比較例1之鋁含量為22wt%而過高,導致合金熔點溫度過高而無法製作出球狀核心層。 Referring to Table 3, it can be seen from Experimental Examples 25, 37-39 that when the aluminum content in the core layer is between 0.01 wt% and 20 wt% defined by the present invention, the melting point and hardness of the core layer are in accordance with the demand, and wherein 4% by weight of aluminum in Experimental Example 25 The content can achieve the best effect of lowering the melting point and enhancing the structural strength. In contrast, the aluminum content of Comparative Example 1 was too high at 22% by weight, resulting in an excessively high melting point temperature of the alloy to produce a spherical core layer.

參閱表4,由實驗例40~42可看出,該核心層中的銅含量在本發明限定的0.01wt%~12wt%之間時,核心層熔點與硬度乃符合需求。反觀比較例2之銅含量為14wt%而過高,導致合金熔點溫度過高而無法製作出球狀核心層。 Referring to Table 4, it can be seen from Experimental Examples 40 to 42 that when the copper content in the core layer is between 0.01 wt% and 12 wt% defined by the present invention, the melting point and hardness of the core layer are in accordance with the demand. In contrast, the copper content of Comparative Example 2 was too high at 14% by weight, resulting in an excessively high melting point temperature of the alloy to produce a spherical core layer.

參閱表5,由實驗例43~51可看出,該核心層的鋁與銅皆落在本發明限定的數值範圍內,即0.01~20wt%的鋁、0.01~12wt%的銅。實驗例43~51同樣可達到焊接球之熔點、硬度及組裝性等特性的要求。反觀比較例3之銅含量為 14wt%而過高,導致合金熔點溫度過高而無法製作出球狀核心層。 Referring to Table 5, it can be seen from Experimental Examples 43 to 51 that the aluminum and copper of the core layer fall within the numerical range defined by the present invention, that is, 0.01 to 20% by weight of aluminum and 0.01 to 12% by weight of copper. In the experimental examples 43 to 51, the requirements of the melting point, hardness, and assembly property of the solder ball were also achieved. In contrast, the copper content of Comparative Example 3 is If it is too high at 14 wt%, the melting point temperature of the alloy is too high to produce a spherical core layer.

參閱表6,由表6的各實驗例可看出,該核心層的鍺、鎵、鎂、鈦或鉻皆落在本發明限定的數值範圍內,該等實驗例同樣可達到焊接球之熔點、硬度及組裝性等特性的要求。反觀比較例4~9之核心層的添加元素的含量過高,無法製作出球狀核心層。 Referring to Table 6, it can be seen from the experimental examples of Table 6, that the core layer of yttrium, gallium, magnesium, titanium or chromium falls within the numerical range defined by the present invention, and the experimental examples can also reach the melting point of the solder ball. Requirements for characteristics such as hardness and assembly. In contrast, the content of the additive element in the core layer of Comparative Examples 4 to 9 was too high to produce a spherical core layer.

參閱表7,抗氧化性的判斷,是將各樣品之焊接球合金放置於烤箱內,並在200℃的溫度且通以空氣的環境下放置30分鐘後,取出並觀察焊料合金的表面亮度變化。其中,抗氧化的能力即為抗色變的能力,且記載方式如下:○:表示焊料合金的表面仍保有金屬亮度,被氧化的程度極輕微或幾乎無; △:表示焊料合金的表面呈現黃或藍或紫之相近色,被氧化的程度較明顯。 Referring to Table 7, the oxidation resistance was judged by placing the solder ball alloy of each sample in an oven and taking it out at a temperature of 200 ° C for 30 minutes in an air atmosphere, and taking out and observing the change in surface brightness of the solder alloy. . Among them, the ability to resist oxidation is the ability to resist color change, and the manner of recording is as follows: ○: indicates that the surface of the solder alloy still retains the brightness of the metal, and the degree of oxidation is extremely slight or almost absent; △: It means that the surface of the solder alloy exhibits a similar color to yellow or blue or purple, and the degree of oxidation is more remarkable.

由表7可看出實驗例8與47未添加鍺與鎵時,抗氧化性較不足但仍堪用。而實驗例52~57、67~69添加適量的鍺與鎵時,抗氧化性確實可獲得提升。 It can be seen from Table 7 that in Experimental Examples 8 and 47, when antimony and gallium were not added, the oxidation resistance was insufficient but still usable. In the experimental examples 52-57, 67-69, when an appropriate amount of bismuth and gallium were added, the oxidation resistance was indeed improved.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

1‧‧‧核心層 1‧‧‧ core layer

2‧‧‧第一包覆層 2‧‧‧First cladding

3‧‧‧第二包覆層 3‧‧‧Second coating

4‧‧‧接合層 4‧‧‧ bonding layer

圖1是一剖視示意圖,顯示本發明高溫無鉛焊接球之一第一較佳實施例;圖2是一剖視示意圖,顯示本發明高溫無鉛焊接球之 一第二較佳實施例;及圖3是一剖視示意圖,顯示本發明高溫無鉛焊接球之一第三較佳實施例。 1 is a schematic cross-sectional view showing a first preferred embodiment of the high-temperature lead-free solder ball of the present invention; and FIG. 2 is a cross-sectional view showing the high-temperature lead-free solder ball of the present invention. A second preferred embodiment; and Figure 3 is a cross-sectional view showing a third preferred embodiment of the high temperature lead-free solder ball of the present invention.

1‧‧‧核心層 1‧‧‧ core layer

2‧‧‧第一包覆層 2‧‧‧First cladding

Claims (11)

一種高溫無鉛焊接球,直徑為10μm~1000μm,並包含一個以鋅為主要成分的核心層。 A high-temperature lead-free solder ball having a diameter of 10 μm to 1000 μm and comprising a core layer mainly composed of zinc. 依據申請專利範圍第1項所述之高溫無鉛焊接球,其中,該核心層還包含0.01~20wt%的鋁、0.01~12wt%的銅,或此等之一組合。 The high temperature lead-free solder ball according to claim 1, wherein the core layer further comprises 0.01 to 20 wt% of aluminum, 0.01 to 12 wt% of copper, or a combination thereof. 依據申請專利範圍第1或2項所述之高溫無鉛焊接球,其中,該核心層還包含0.01~5wt%的鍺、0.01~5wt%的鎵、0.01~1wt%的鎂、0.01~1wt%的鈦、0.01~1wt%的鉻,或此等之一組合。 The high-temperature lead-free solder ball according to claim 1 or 2, wherein the core layer further comprises 0.01 to 5 wt% of antimony, 0.01 to 5 wt% of gallium, 0.01 to 1 wt% of magnesium, and 0.01 to 1 wt% of Titanium, 0.01 to 1 wt% chromium, or a combination of these. 依據申請專利範圍第1或2項所述之高溫無鉛焊接球,還包含一包覆於該核心層外的第一包覆層,其材料為錫、銅或鎳。 The high-temperature lead-free solder ball according to claim 1 or 2, further comprising a first cladding layer coated on the outside of the core layer, the material of which is tin, copper or nickel. 依據申請專利範圍第4項所述之高溫無鉛焊接球,還包含一包覆於該第一包覆層外的第二包覆層,該第二包覆層為錫、銀、含鎳之錫合金、含鈷之錫合金、含鐵之錫合金,或此等之一組合。 The high-temperature lead-free solder ball according to claim 4, further comprising a second cladding layer coated on the outside of the first cladding layer, the second cladding layer being tin, silver, tin containing tin Alloy, cobalt-containing tin alloy, iron-containing tin alloy, or a combination of these. 依據申請專利範圍第5項所述之高溫無鉛焊接球,還包含一位於該第一包覆層與該第二包覆層之間的接合層,該接合層包含鎳。 The high-temperature lead-free solder ball according to claim 5, further comprising a bonding layer between the first cladding layer and the second cladding layer, the bonding layer comprising nickel. 依據申請專利範圍第3項所述之高溫無鉛焊接球,還包含一包覆於該核心層外的第一包覆層,其材料為錫、銅或鎳。 The high-temperature lead-free solder ball according to claim 3, further comprising a first cladding layer coated on the outside of the core layer, the material of which is tin, copper or nickel. 依據申請專利範圍第7項所述之高溫無鉛焊接球,還包 含一包覆於該第一包覆層外的第二包覆層,該第二包覆層為錫、銀、含鎳之錫合金、含鈷之錫合金、含鐵之錫合金,或此等之一組合。 According to the high-temperature lead-free solder ball described in item 7 of the patent application scope, a second cladding layer coated on the outside of the first cladding layer, the second cladding layer being tin, silver, a tin alloy containing nickel, a tin alloy containing cobalt, a tin alloy containing iron, or the like One of the combinations. 依據申請專利範圍第8項所述之高溫無鉛焊接球,還包含一位於該第一包覆層與該第二包覆層之間的接合層,該接合層包含鎳。 The high-temperature lead-free solder ball according to claim 8, further comprising a bonding layer between the first cladding layer and the second cladding layer, the bonding layer comprising nickel. 依據申請專利範圍第1項所述之高溫無鉛焊接球,其中,該核心層還包含4wt%的鋁。 The high temperature lead-free solder ball according to claim 1, wherein the core layer further comprises 4 wt% of aluminum. 依據申請專利範圍第1項所述之高溫無鉛焊接球,用於球柵陣列封裝,或三維立體封裝。 The high-temperature lead-free solder ball according to claim 1 of the patent application scope is used for a ball grid array package or a three-dimensional package.
TW101144716A 2012-11-29 2012-11-29 High temperature lead free solder ball TWI485026B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101144716A TWI485026B (en) 2012-11-29 2012-11-29 High temperature lead free solder ball

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101144716A TWI485026B (en) 2012-11-29 2012-11-29 High temperature lead free solder ball

Publications (2)

Publication Number Publication Date
TW201420252A true TW201420252A (en) 2014-06-01
TWI485026B TWI485026B (en) 2015-05-21

Family

ID=51393130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101144716A TWI485026B (en) 2012-11-29 2012-11-29 High temperature lead free solder ball

Country Status (1)

Country Link
TW (1) TWI485026B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111843276A (en) * 2020-06-29 2020-10-30 上海邑和汽车科技有限公司 Paste-free brazing process and combined solder

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5535238B2 (en) * 1975-01-24 1980-09-12
US5573602A (en) * 1994-12-19 1996-11-12 Motorola, Inc. Solder paste
US5573859A (en) * 1995-09-05 1996-11-12 Motorola, Inc. Auto-regulating solder composition
JPH11514300A (en) * 1995-10-06 1999-12-07 ブラウン ユニバーシティ リサーチ ファウンデーション Soldering methods and compounds
DE60227159D1 (en) * 2001-03-06 2008-07-31 Kiyohito Ishida ELEMENT WITH SEPARATION STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
JP3757881B2 (en) * 2002-03-08 2006-03-22 株式会社日立製作所 Solder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111843276A (en) * 2020-06-29 2020-10-30 上海邑和汽车科技有限公司 Paste-free brazing process and combined solder

Also Published As

Publication number Publication date
TWI485026B (en) 2015-05-21

Similar Documents

Publication Publication Date Title
US11411150B2 (en) Advanced solder alloys for electronic interconnects
KR102522501B1 (en) Lead-free, silver-free solder alloys
TWI460046B (en) High strength silver-free lead-free solder
TWI576195B (en) High temperature resistant high strength lead free solder
JP5943066B2 (en) Bonding method and manufacturing method of bonded structure
TW201728398A (en) Lead-free, antimony-free solder alloy, use of the same, soldered joint comprising the same, and method for forming soldered joint
JP5614507B2 (en) Sn-Cu lead-free solder alloy
JP4692479B2 (en) Bonding materials and modular structures
CN103769764A (en) Soldering lug for soft soldering and power module assembly structure
KR101430673B1 (en) Semiconductor device and die bonding structure thereof
WO2011158668A1 (en) Bi-Al-Zn-BASED Pb-FREE SOLDER ALLOY
TWI485026B (en) High temperature lead free solder ball
JP6127941B2 (en) Solder joint material and manufacturing method thereof
CN103934590A (en) ZnAlMgIn high temperature lead-free solder
JP6848859B2 (en) Solder alloy
JP7025208B2 (en) Solder alloy
JP6477517B2 (en) Manufacturing method of semiconductor device
JP2011005542A (en) In-CONTAINING LEAD-FREE SOLDER ALLOY, AND SOLDERED JOINT USING THE SOLDER
TW201308543A (en) Bonded structure
CN100593448C (en) Soft soldering material with no lead
TWI404185B (en) Metal frame for electronic part
JP5744080B2 (en) Bonded body and semiconductor device
JPH0366813B2 (en)
TW200911070A (en) Lead free solder with core